JP6638360B2 - Cleaning method and cleaning apparatus for plasma processing apparatus - Google Patents

Description

  The present invention relates to a cleaning method and a cleaning apparatus for a plasma processing apparatus used for dry etching and the like, and more particularly to a method and a cleaning apparatus for efficiently and effectively cleaning the inside of a chamber of a plasma processing apparatus.

  2. Description of the Related Art Conventionally, in a semiconductor manufacturing process or the like, a plasma processing apparatus is used to convert a gas into plasma to act on a substrate to be processed (for example, a semiconductor wafer) and perform etching, sputtering, ion implantation, or the like on the substrate to be processed. Used. Further, as such a plasma processing apparatus, a flat upper electrode and a lower electrode are arranged in a processing chamber so as to face in parallel, and a high frequency power is applied between these electrodes to generate plasma. A so-called parallel plate type plasma processing apparatus that supplies an etching gas from a gas supply unit is known, and a plasma processing apparatus having such a structure that controls a plasma density using a magnetic field is also known. (For example, see Patent Document 1).

In such a plasma processing apparatus, when plasma processing such as plasma etching is repeatedly performed, a by-product generated by a reaction with a halogen-based gas (for example, CF ₄ ) used as one component of a gas to be plasmatized is generated in the processing chamber. Plasmas such as by-products attached to various constituent members (parts) disposed therein, particularly the upper electrode, gradually increase, and when attached to the gas holes of the gas supply unit, the gas supply amount decreases. Processing may be adversely affected. For this reason, cleaning is periodically performed to remove deposits attached to components in the processing chamber.

  As a method of cleaning components of the plasma processing apparatus, a method of generating plasma of a cleaning gas such as oxygen, hydrogen, or nitrogen in a processing chamber to etch and remove deposits is known (Patent Document 2).

  In addition, a plasma of a cleaning gas is generated in the processing chamber to etch the deposit by the plasma, and a current is applied to a plurality of coils to generate a magnetic field. A method has been proposed in which the amount of current applied to the plurality of coils is changed for each coil (Patent Document 3).

JP 2013-149722 A JP 2009-99858 A JP 2015-170611 A

  In recent years, miniaturization and high integration of semiconductor devices such as memories have reached the limit, and three-dimensional NAND memories and the like, which increase the capacity by lamination, have become mainstream. The capacity of the three-dimensional NAND memory can be increased by increasing the number of stacked layers. However, as the number of stacked layers increases, the processing time of the plasma etching process also increases, so that the amount of deposits in the processing chamber also increases. For this reason, the cleaning of the inside of the chamber as described above must be performed frequently, and the development of a method for efficiently performing the cleaning in a short time has been demanded.

Here, the deposits on the constituent members in the processing chamber of the plasma processing apparatus are generated by plasma of a halogen-based gas (for example, CF ₄ ) used as one component of a gas to be plasmatized and a semiconductor material such as yttria or alumite. (E.g., YF ₃ and AlF ₃ ), which must be removed.

  However, the cleaning methods described in Patent Literature 2 and Patent Literature 3 generate plasma of a cleaning gas in a chamber of a plasma processing apparatus to etch and remove deposits on constituent members. However, there is a problem that when the by-products attached to the constituent members are thick, they cannot be sufficiently removed. On the other hand, in order to sufficiently remove by-products attached to the constituent members, these cleaning gases are used to remove by-products (attachments) by an etching action due to plasma, so that the upper electrode to be cleaned is removed. For example, there is a problem that the material itself of the constituent member is worn. In addition, there is also a problem that the removing operation is very troublesome.

  Therefore, when there is a large amount of deposits on the components of the plasma processing apparatus in the processing chamber, particularly on the upper electrode, the deposits are once taken out of the processing chamber, and the deposits are removed by a chemical or sandblast. However, since a substrate to be processed, such as a semiconductor wafer, is processed by a plasma processing apparatus, the working efficiency and the plasma processing apparatus can be improved if the plasma processing apparatus can be processed in the apparatus without disassembling the plasma processing apparatus and removing a component to which by-products adhere. This is desirable for shortening the stop time of the system.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and eliminates the wear of an object such as an upper electrode during cleaning without disassembling a plasma processing apparatus and removing a component to which by-products adhere from a processing chamber. Provided is a cleaning method for a plasma processing apparatus, which is capable of suppressing the attachment of fluoride such as YF ₃ by plasma efficiently and in a short time, and a cleaning apparatus for performing the cleaning method. The purpose is to.

  In view of the above object, the present invention firstly provides a processing chamber for accommodating a substrate to be processed, a lower electrode provided in the processing chamber and on which the substrate to be processed is mounted, and a lower electrode facing the lower electrode. Cleaning of a plasma processing apparatus for removing components adhered to components in the processing chamber and / or inner wall surfaces of the processing chamber of the plasma processing apparatus having an upper electrode to perform and a pressure reducing mechanism for reducing the pressure in the processing chamber. A method comprising: supplying a processing gas containing water vapor into the processing chamber; converting the water vapor into a plasma; and treating the components in the processing chamber and / or the inside of the processing chamber by the processing gas containing the vaporized water vapor. Provided is a method for cleaning a plasma processing apparatus, characterized by processing a wall surface (Invention 1).

According to this invention (Invention 1), when water (steam) is turned into plasma, hydrogen radicals (H.) and hydroxy radicals (OH.) Are generated. In the plasma processing, most of the deposits on components in the processing chamber and on the inner wall surface of the processing chamber are mixed with a halogen-based gas such as CF _4, which is used as one component of a gas to be converted into plasma, with yttria or alumite (Al). _Since a semiconductor material to be processed, such as ₂ O ₃ ), is a fluoride such as YF ₃ or AlF ₃ that has reacted, water vapor is supplied into a processing chamber, which is converted into a plasma and processed with water vapor plasma. As a result, the generated hydrogen radicals (H.) react with F in a fluoride such as YF ₃ or AlF ₃ which is attached to form HF, which is removed. In addition, the remaining elements on the cation side in fluorides such as Y and Al are converted into oxides such as yttria (Y ₂ O ₃ ) and alumite (Al ₂ O ₃ ) by reaction with hydroxy radicals (OH.). Become. Thus, the components such as the upper electrode in the processing chamber of the plasma processing apparatus can be prevented from being worn, and the components can be efficiently cleaned in a short time.

  In the above invention (Invention 1), it is preferable that the processing gas containing the water vapor is sprayed from an upper electrode or a vicinity of the upper electrode of the plasma processing apparatus (Invention 2).

  According to this invention (Invention 2), by spraying the processing gas containing water vapor from the upper electrode side into plasma, the plasma concentration in the vicinity of the upper electrode can be increased, and the amount of attached matter tends to increase. The upper electrode can be cleaned particularly efficiently.

  In the above inventions (Inventions 1 and 2), the processing gas containing water vapor preferably contains one or more of a rare gas, oxygen, nitrogen and hydrogen (Invention 3).

  According to this invention (Invention 3), in addition to the cleaning effect by the above-mentioned plasma water vapor, an etching effect by other plasma gas components can be expected. Since this etching effect has a tendency to be prioritized over the fluoride over the oxide, it is possible to efficiently remove the deposit attached to the constituent members such as the upper electrode in the processing chamber of the plasma processing apparatus.

In the above inventions (Inventions 1 to 3), the high-frequency output (RF output) for converting the processing gas into plasma is preferably 5 to 300 W / cm ² (Invention 4).

  According to this invention (Invention 4), by applying high-frequency power to the processing gas with the above output, the processing gas itself can be efficiently turned into plasma, and the component itself to which the deposit to be processed adhered Wear of the tire is minimal.

  In the above inventions (Inventions 1 to 4), it is preferable to supply the processing gas containing the water vapor so as to have a pressure of 0.5 to 20 Pa under reduced pressure (Invention 5).

  According to this invention (Invention 5), by supplying the processing gas having the above pressure in a state where the pressure inside the processing chamber, which is the processing space, is reduced, the processing gas in the processing chamber is quickly diffused while efficiently turning into plasma. In addition, cleaning can be performed in a short time, and the influence on the component itself to be processed can be negligible.

  Also, the present invention provides, secondly, a processing chamber for accommodating a substrate to be processed, a lower electrode disposed in the processing chamber and on which the substrate to be processed is mounted, and an upper electrode facing the lower electrode. And a cleaning device for a plasma processing apparatus for removing components attached to the processing chamber and / or the inner wall surface of the processing chamber of the plasma processing apparatus having a pressure reducing mechanism for reducing the pressure in the processing chamber. Thus, there is provided a cleaning apparatus for a plasma processing apparatus, comprising a spray mechanism for spraying a processing gas containing water vapor into the processing chamber (Invention 6).

According to this invention (Invention 6), when water (steam) is turned into plasma, hydrogen radicals (H.) and hydroxy radicals (OH.) Are generated. In the plasma processing, most of the deposits on components in the processing chamber and on the inner wall surface of the processing chamber are mixed with a halogen-based gas such as CF _4, which is used as one component of a gas to be converted into plasma, with yttria or alumite (Al). _{Since the} semiconductor material to be processed, such as ₂ O ₃ ), is a fluoride such as YF ₃ or AlF ₃ that has reacted, water vapor is supplied from the spray mechanism into the processing chamber while the pressure inside the processing chamber is reduced, and By applying a high-frequency current to the electrode and the lower electrode, it is possible to treat the components adhered to the components inside the processing chamber and the inner wall surface of the processing chamber with the steam plasma. Thus, the wear of the components such as the upper electrode in the processing chamber of the plasma processing apparatus can be suppressed, and the components can be efficiently cleaned in a short time.

  In the above invention (Invention 6), it is preferable that the spray mechanism has a spray port for spraying the processing gas at or near an upper electrode of the plasma processing apparatus (Invention 7).

  According to this invention (Invention 7), since the processing gas containing water vapor can be sprayed from the upper electrode side and turned into plasma, the plasma concentration in the vicinity of the upper electrode can be increased, and the amount of attached matter is large. The upper electrode that tends to be easily cleaned can be particularly efficiently cleaned.

According to the cleaning method of the plasma processing apparatus of the present invention, the components adhered to the processing chamber of the plasma processing apparatus and the deposits adhered to the inner wall surface of the processing chamber are converted into a processing gas containing water vapor supplied into the processing chamber by plasma. Hydrogen radicals (H.) generated by turning water vapor into plasma react with F in a fluoride such as YF ₃ which is attached to form HF, which is removed. . Further, the element on the cation side in the fluoride such as the remaining Y becomes an oxide such as yttria (Y ₂ O ₃ ) due to the reaction with the hydroxyl radical (OH ·), and excessively adheres the substance such as etching. The substrate can be selectively removed without rubbing the substrate. Accordingly, without removing the constituent members such as the upper electrode of the plasma processing apparatus to be cleaned from the processing chamber, the wear thereof can be suppressed, and the plasma processing apparatus can be efficiently cleaned in a short time.

FIG. 1 is a schematic diagram schematically showing a cleaning device of a plasma processing apparatus according to a first embodiment of the present invention. It is the schematic which shows typically the cleaning device of the plasma processing apparatus by 2nd Embodiment of this invention.

  Hereinafter, a cleaning apparatus for a plasma processing apparatus according to a first embodiment of the present invention and a cleaning method using the same will be described with reference to the accompanying drawings.

  FIG. 1 shows a cleaning apparatus according to the present embodiment attached to a plasma processing apparatus for semiconductor wafers. In FIG. 1, the plasma processing apparatus includes a processing chamber 1 and a constituent member provided in the processing chamber 1. It has a plate-like upper electrode 2 and a plate-like lower electrode 3 provided in parallel with and opposed to the plate-like upper electrode 2. An inner wall plate 3A is installed upright at the edge of the lower electrode 3. The upper electrode 2 and the lower electrode 3 are connected to an RF (high-frequency) power supply 4 for supplying a high-frequency current, respectively. The RF (high-frequency) power supply 4 has a high-frequency power for plasma generation at a desired frequency and a desired duty ratio. Can be applied to the upper electrode 2 and the lower electrode 3.

  A plurality of gas introduction pipes 5 (two in this embodiment) for spraying a processing gas W containing water vapor as a cleaning device are provided near the upper electrode 2 in the upper part of the processing chamber 1. The gas introducing pipe 5 has a distal end opening in the processing chamber 1 as a spray port 5A, while a proximal end communicates with a spraying mechanism (not shown) for the processing gas W containing water vapor. Further, an exhaust port 6 connected to a pressure reducing device (not shown) is formed in a lower portion of the processing chamber 1.

  Here, as the processing gas W containing steam, not only steam gas alone, but also one or more of rare gas, oxygen, nitrogen, and hydrogen mixed with steam gas at about 10% or less, particularly about 5% or less. A thing may be used. By processing these other gas components by converting them into plasma, an etching effect can be exerted in addition to a removal effect by the later-described modification of fluoride by steam plasma. In particular, if the blending amount is about 10% or less, the etching effect has a higher priority than the oxide over the fluoride, so that the substrate to be treated is not hurt.

In the above-described plasma processing apparatus, the processing target is a component in the processing chamber 1 such as the upper electrode 2 and the lower electrode 3 and an inner wall surface of the processing chamber 1. It is preferable that at least a part of the surface layer be an yttria-based material or an alumite-based material. In the present embodiment, the plasma processing apparatus 1 uses a plasma processing using a halogen-based gas such as CF ₄ to modify the base material yttria and the like, and the inside of the processing chamber 1 to which the deposit such as YF ₃ has adhered. And for cleaning the inner wall surface of the processing chamber 1. As such an object to be treated, the upper electrode 2 is particularly preferable because a fluoride such as YF ₃ is thick and easily adheres.

  Next, a cleaning method using the cleaning device of the plasma processing apparatus of the present embodiment having the above-described configuration will be described.

First, when the processing chamber 1 of the plasma processing apparatus is sealed, a decompression device (not shown) is activated to suck the gas through the exhaust port 6, and the pressure in the processing chamber 1 is reduced to preferably 10 ⁻³ Pa or less. By reducing the pressure inside the processing chamber 1 to 10 ⁻³ Pa or less, fine powder and other impurities attached to the inner wall surface of the processing chamber 1 and various constituent members in the processing chamber 1, particularly, the upper electrode 2 are reduced. Is preferred because the treatment with water vapor plasma described later becomes easy.

Next, a spraying mechanism (not shown) is activated to supply a processing gas W containing water vapor from the spraying port 5A of the gas introduction pipe 5 provided in the vicinity of the upper electrode 2 from the upper electrode 2 side and to use the RF power supply 4. By applying a high frequency, the processing gas W containing water vapor is turned into plasma. Hydrogen radicals (H.) and hydroxy radicals (OH.) Are generated by converting the water vapor into plasma, and the hydrogen radicals are generated on the inner wall surface of the processing chamber 1 and various constituent members in the processing chamber 1, particularly the upper electrode. It reacts with F in a fluoride such as YF ₃ which is an attached matter of No. 2 and is converted into HF to be removed. Further, the element on the cation side in the fluoride such as the remaining Y becomes an oxide such as yttria (Y ₂ O ₃ ) by the reaction with the hydroxy radical (OH.). Here, the fluoride such as YF ₃ is originally a denatured yttria of the upper electrode 2 and the lower electrode 3, and therefore, the object to be treated, especially the adhered matter adhered to the upper electrode 2, is excessively rubbed such as by etching. It can be selectively removed without taking it. In particular, in the present embodiment, since the processing gas W containing water vapor is sprayed from the upper electrode 2 side to form a plasma, the plasma concentration in the vicinity of the upper electrode 2 can be increased, and the amount of attached matter tends to increase. There is an effect that the upper electrode 2 can be cleaned particularly efficiently.

  The processing gas W may include a gas component other than the steam gas, and may include, for example, one or more of a rare gas, oxygen, nitrogen, and hydrogen. In this case, an etching effect can be exerted in addition to the above-mentioned effect of turning the water vapor into plasma. In particular, if the compounding amount is about 10% or less, the etching effect has a higher priority than the fluoride over the oxide, and therefore, the substrate to be treated such as the upper electrode 2 does not hurt.

  Here, the processing gas W containing water vapor is preferably supplied so as to have a pressure of 0.5 to 20 Pa. When the pressure supply pressure of the processing gas W is less than 0.5 Pa, it is difficult to form a plasma, and when the pressure exceeds 20 Pa, not only the effect cannot be further improved, but also the substrate to be treated such as the upper electrode 2 is easily worn. Is not preferred.

Further, it is preferable that the high frequency output for converting the processing gas W to which the high frequency is applied using the RF power source 4 into plasma is 5 to 300 W / cm ² . When the high-frequency output is less than 5 W / cm ² , plasma is less likely to be generated, and the effect of denaturing a substance such as YF ₃ as a fluoride attached to a processing target such as the upper electrode 2 cannot be sufficiently obtained. If it exceeds cm ² , further improvement of the effect cannot be obtained, and the processing target itself such as the upper electrode 2 is easily damaged, which is not preferable. In the case of the above output, in a general plasma processing apparatus, the high-frequency output of the entire apparatus is in the range of 2500 to 10000 W.

  There is no particular limitation on the processing time of the plasma-treated processing gas W, but if it is not economical if it is too long, a sufficient cleaning effect cannot be obtained if it is short, so it may be performed for about 3 to 30 minutes.

  According to the cleaning method of the plasma processing apparatus of the present embodiment as described above, the upper electrode 2, the lower electrode 3, and the inner wall plate 3A as components provided in the processing chamber 1 and the inner wall surface of the processing chamber 1 are attached. Deposits can be removed. In particular, it is suitable for cleaning the upper electrode 2 in which the deposit as a fluoride easily adheres and the deposit tends to be thick.

  Next, a second embodiment of the present invention will be described. In the cleaning device of the plasma processing apparatus according to the second embodiment, as shown in FIG. 2, a gas introduction pipe 5 for spraying a processing gas W containing water vapor is provided on the upper electrode 2, and a spray port 5A is provided on the lower surface of the upper electrode 2. Except for being formed, it has the same configuration as the first embodiment described above. The gas introduction pipe 5 may be shared with a halogen gas supply pipe for etching or the like.

  By providing the gas introduction pipe 5 in the upper electrode 2 as in the present embodiment, not only the same operation as in the first embodiment described above is exerted, but also the gas introduction pipe 5 for spraying the processing gas W containing water vapor. It is not necessary to separately provide a halogen gas supply pipe for etching for processing of semiconductor substrates, etc., and it is only necessary to switch it if necessary. It can be a device of the form.

  Although the present embodiment has been described with reference to the accompanying drawings, the present invention is not limited to the above-described nuclear embodiments, and various modifications are possible. For example, the gas introduction pipe 5 and the spray port 5A for spraying the processing gas W containing water vapor are not limited to the upper part of the processing chamber 1, and when the lower electrode 3 and the inner wall plate 3A are to be cleaned, the processing chamber 1 , Or a structure in which the processing gas W is sprayed from below toward the upper electrode 2.

The following specific examples illustrate the invention in more detail.
[Examples 1 to 9]
A 200 μm yttria coating was formed on the surface of the aluminum plate by yttria spraying and used as a substrate. The simulated deposit was formed on the surface layer of the yttria coating by exposing the aluminum plate on which the yttria coating was formed to plasma of CF ₄ gas, and the simulated upper electrode 2 was used for the test. The thickness of the deposit on the simulated upper electrode 2 was about 2 μm.

The simulated upper electrode 2 for this test is set in the processing chamber 1 of the cleaning apparatus shown in FIG. 1, the pressure in the processing chamber 1 is reduced to 10 ⁻³ Pa or less, and the processing gas W containing water vapor is shown in Table 1. The cleaning gas was supplied at 0.5 to 25 Pa and the processing gas W was turned into plasma at a high frequency output of 1 to 500 W / cm ² as shown in Table 1 to perform a cleaning process for 10 minutes. Table 1 shows these processing conditions. In addition, the element composition ratio of the surface layer of the upper electrode 2 after the treatment was measured by XPS, and the amount of decrease in the film thickness of the yttria film as the base was measured. Table 2 shows the results. As a reference example, Table 2 also shows the XPS measurement results of the element composition ratio of the surface layer of the upper electrode 2 before forming the cleaning adhering substance for cleaning and cleaning.

[Comparative Example 1]
The upper electrode 2 for test on which the simulated deposit was formed under the same conditions as those used in Example 1 was set in the processing chamber 1 of the cleaning device shown in FIG. 1, and the inside of the processing chamber 1 was 10 ⁻³ Pa or less. Then, Ar was supplied at 10 Pa as a processing gas, and the processing gas W was turned into plasma with a high-frequency output of 300 W / cm ² to perform a cleaning process for 10 minutes. Table 1 shows these processing conditions. In addition, the element composition ratio of the surface layer of the upper electrode 2 after the treatment was measured by XPS, and the amount of decrease in the film thickness of the yttria film as the base was measured. Table 2 shows the results.

[Comparative Example 2]
The upper electrode 2 for test on which the simulated deposit was formed under the same conditions as those used in Example 1 was set in the processing chamber 1 of the cleaning device shown in FIG. 1, and the inside of the processing chamber 1 was 10 ⁻³ Pa or less. Then, H ₂ was supplied as a processing gas at 10 Pa, and the processing gas W was turned into plasma with a high frequency output of 300 W / cm ² to perform a cleaning process for 10 minutes. Table 1 shows these processing conditions. In addition, the element composition ratio of the surface layer of the upper electrode 2 after the treatment was measured by XPS, and the amount of decrease in the film thickness of the yttria film as the base was measured. Table 2 shows the results.

As is clear from Tables 1 and 2, from the change in the composition of the surface layer of the test upper electrode 2, according to the cleaning methods of Examples 1 to 9, fluorine was reduced as compared with the reference example in a processing time of 10 minutes. It can be seen that the deposits can be selectively cleaned. This is because fluoride such as YF ₃ reacts with hydrogen radicals (H.) caused by water vapor plasma and is removed as HF, while yttrium on the cation side reacts with hydroxy radicals (OH.) To react with yttria. It is thought to be.

In particular, when the pressure of the processing gas W containing water vapor is 3 Pa, the cleaning effect is large by setting the output of the high-frequency power supply to 5 W / cm ² or more, but in Example 9 where the output of the high-frequency power supply exceeds 300 W / cm ² , the yttria coating The decrease was significant. Further, in Example 8 in which the output of the high-frequency power supply was 300 W / cm ² and the pressure of the processing gas W containing water vapor exceeded 20 Pa, slight wear of the yttria coating was observed.

  On the other hand, in Comparative Example 1 in which the test upper electrode 2 was processed in the processing chamber 1 in the same manner as in the case where Ar was used as a processing gas to generate plasma, wear of the yttria film was recognized, and hydrogen was used as the processing gas to generate plasma. Similarly, in Comparative Example 1 in which the test upper electrode 2 was processed in the processing chamber 1, the element composition ratio was close to that of the reference example before cleaning. It turns out that it is not removal.

DESCRIPTION OF SYMBOLS 1 ... Processing chamber 2 ... Upper electrode 3 ... Lower electrode 4 ... RF (high frequency) power supply 5 ... Gas introduction pipe 5A ... Spray port 6 ... Exhaust port W ... Processing gas containing water vapor

Claims (7)

A processing chamber for accommodating the substrate to be processed, a lower electrode disposed in the processing chamber and on which the substrate to be processed is mounted, an upper electrode facing the lower electrode, and a reduced pressure for reducing the pressure in the processing chamber. A cleaning method for a plasma processing apparatus, comprising: removing components attached to components in the processing chamber and / or inner wall surfaces of the processing chamber of the plasma processing apparatus having a mechanism.
The deposit is fluoride,
Supplying a processing gas containing water vapor into the processing chamber;
Turning the processing gas containing water vapor into plasma,
A method for cleaning a plasma processing apparatus, comprising processing a component in the processing chamber and / or an inner wall surface of the processing chamber with the processing gas containing the water vapor converted into plasma.   The cleaning method for a plasma processing apparatus according to claim 1, wherein the processing gas containing the water vapor is sprayed from an upper electrode or a vicinity of the upper electrode of the plasma processing apparatus.   3. The cleaning method for a plasma processing apparatus according to claim 1, wherein the processing gas containing water vapor contains one or more of a rare gas, oxygen, nitrogen, and hydrogen. 4. The cleaning method for a plasma processing apparatus according to claim 1, wherein a high-frequency output (RF output) for converting the processing gas containing water vapor into plasma is 5 to 300 W / cm < ² >.   The method for cleaning a plasma processing apparatus according to any one of claims 1 to 4, wherein the processing gas containing water vapor is supplied under a reduced pressure to a pressure of 0.5 to 20 Pa. A processing chamber for accommodating the substrate to be processed, a lower electrode disposed in the processing chamber and on which the substrate to be processed is mounted, an upper electrode facing the lower electrode, and a reduced pressure for reducing the pressure in the processing chamber. A cleaning device for a plasma processing apparatus, which removes a component adhered to the processing chamber and / or an inner wall surface of the processing chamber of the plasma processing apparatus having a mechanism,
The deposit is fluoride,
A spray mechanism for spraying a processing gas containing water vapor into the processing chamber ,
Turning the processing gas containing water vapor into plasma,
A cleaning apparatus for a plasma processing apparatus, wherein a constituent member in the processing chamber is processed by the processing gas containing the water vapor converted into plasma.   7. The cleaning apparatus for a plasma processing apparatus according to claim 6, wherein the spray mechanism has a spray port for spraying the processing gas at or near an upper electrode of the plasma processing apparatus.

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