JP6627132B2 - Film forming apparatus and film forming method - Google Patents

Description

  The present invention relates to a film forming apparatus and a film forming method for forming a film using a mist, and a susceptor used in the film forming apparatus.

Conventionally, a high-vacuum film forming apparatus that can realize a non-equilibrium state such as pulsed laser deposition (PLD), molecular beam epitaxy (MBE), and sputtering has been studied. It has become possible to manufacture oxide semiconductors which could not be manufactured by the melt method or the like. Above all, a mist chemical vapor deposition (Mist Chemical Vapor Deposition: Mist CVD) method for growing crystals on a substrate using atomized raw material solution (mist) has been studied. It has become possible to produce gallium oxide (α-Ga ₂ O ₃ ) having a corundum structure (Non-Patent Document 1). As a semiconductor having a large band gap, α-Ga ₂ O ₃ is expected to be applied to a next-generation switching element that can realize high breakdown voltage, low loss, and high heat resistance.

  Regarding a mist chemical vapor deposition apparatus (hereinafter also referred to as a mist CVD apparatus), Patent Literature 1 describes a tube furnace type mist CVD apparatus. Patent Document 2 describes a fine channel type mist CVD apparatus. Patent Document 3 describes a linear source type mist CVD apparatus. Patent Literature 4 describes a mist CVD device of a tubular furnace, and differs from the mist CVD device described in Patent Literature 1 in that a carrier gas is introduced into a mist generator. Patent Document 5 describes a mist CVD apparatus which is a rotary stage in which a substrate is installed above a mist generator and a susceptor is provided on a hot plate.

  However, unlike other methods, the mist CVD method does not need to be heated to a high temperature and can produce a crystal structure of a metastable phase such as a corundum structure of α-gallium oxide. By covering the substrate surface with the volatile layer, it is necessary to grow crystals without the mist droplets coming into direct contact with the film. Therefore, the control is not easy and it is difficult to obtain a uniform crystal film. Further, in the mist CVD method, there is a problem that the mist particles vary, or the mist sinks in the supply pipe before reaching the substrate.

  In response to these conventional problems, the present inventors have attempted to apply a mist CVD apparatus having a configuration such as a gas phase chemical apparatus described in Patent Document 6, but mist that sinks or agglomerates drip, There is a problem that the acceleration of the mist is inhibited and induces abnormal growth.The application of the conventional technology, such as tilting the supply pipe or providing individual thin supply pipes for the raw material supply, may result in obtaining a uniform film. It was difficult.

JP-A-1-257337 JP 2005-307238 A JP 2012-46772 A Patent No. 539794 JP 2014-63973 A JP-A-2-291113

Kentaro Kaneko, "Growth and Properties of Gallium Oxide Mixed Crystal Thin Films with Corundum Structure", Doctoral Dissertation, Kyoto University, March 2013

  An object of the present invention is to provide a film forming apparatus and a film forming method capable of obtaining a uniform film.

The present inventors have conducted intensive studies to achieve the above object, and as a result, have found that the use of a susceptor to accelerate mist to the substrate significantly improves the film forming quality of a film forming apparatus. It has been found that a simple film forming apparatus can solve the above-mentioned conventional problems at once.
In addition, the present inventors have further studied after obtaining the above findings, and completed the present invention.

That is, the present invention
(1) A film forming apparatus for transporting a mist of a raw material onto a substrate by a carrier gas to form a film, wherein the mist is configured to atomize the raw material to generate a mist;
Carrier gas supply means for supplying the carrier gas,
A supply pipe for supplying mist generated by the mist generator to the substrate by the carrier gas,
With
A film forming apparatus, comprising: a mist accelerating unit for further accelerating a mist carried by the carrier gas to the substrate.
About.

Also, the present invention
(2) a susceptor for holding the substrate in the supply pipe or, if desired, in a growth chamber provided adjacent to the supply pipe;
Said susceptor, said characterized in that it comprises a mist accelerator for accelerating mist to said substrate (1) film-forming apparatus according,
(3) The total area of the susceptor region and the substrate in a cross section of the supply pipe or the growth chamber divided into a susceptor region occupied by the susceptor, the substrate region, and a discharge region for discharging unreacted mist. but the film forming apparatus before SL (2) Symbol mounting which being greater than the area of the discharge region,
(4) The film formation according to ( 2 ) or (3 ) , wherein the whole or a part of the outer peripheral shape of the susceptor is substantially the same along the inner periphery of the supply pipe or the growth chamber. apparatus,
(5) provided with the susceptor to the supply pipe, all or part of the outer peripheral shape of the susceptor, said a substantially circular such that substantially the same along the inner periphery of the supply pipe (1) to ( 4) The film forming apparatus according to any one of the above,
(6) the peripheral shape of the substrate-side surface of the susceptor is substantially semicircular (5) film formation apparatus according,
(7) film deposition apparatus according to any one of the said susceptor, characterized in that it comprises a means for holding by tilting the substrate (2) to (6),
(8) The film forming apparatus according to (7), wherein the substrate has an inclination angle of 5 ° to 60 °.
(9) film deposition apparatus according to any one of the above said susceptor has a means for holding embed the substrate (2) to (8),
About.

Also, the present invention
(10) The film formation according to any one of (1) to (9), wherein the mist accelerating means further applies an acceleration of 0.1 to 10 m / s ² to the mist carried by the carrier gas. apparatus,
(11) The film forming apparatus according to any one of (1) to (10), wherein a flow direction of the mist to be accelerated is parallel or substantially parallel to the substrate.
(12) A film forming method in which mist generated by atomizing a raw material is transferred onto a substrate by a carrier gas to form a film,
Atomizing the raw material to generate a mist;
A carrier gas supply step of supplying a carrier gas,
A mist supply step of supplying mist generated by the mist generator to the substrate by a carrier gas,
Including
In the mist supply step, a mist being transported by a carrier gas is further accelerated to the substrate, a film forming method,
(13) A film formed by the film forming method according to (12),
About.

  According to the film forming apparatus and the film forming method of the present invention, a uniform film can be obtained.

FIG. 1 is a schematic diagram illustrating an example of a film forming apparatus according to the present invention. FIG. 3 is a schematic diagram illustrating an example of a susceptor according to the present invention. It is a schematic diagram which shows one aspect of the susceptor arrange | positioned in a supply. (A) is a schematic view of a cross section in the supply pipe from the upstream to the downstream of the mist up to the substrate. (B) is a schematic view of the cross section of the supply pipe, the substrate, and the susceptor when the upstream of the mist is on the left and the downstream is on the right. FIG. 4 is a diagram illustrating a relationship between a total area of a susceptor and a substrate of the susceptor illustrated in FIG. 3 and an area of a discharge region. It is a figure which shows the inside of the tubular furnace at the time of film-forming typically. FIG. 3 is a schematic diagram illustrating an example of a susceptor according to the present invention. FIG. 7 is a schematic diagram illustrating a cross section of the susceptor of FIG. 6. FIG. 4 is a schematic diagram showing a preferred example in a case where the susceptor according to the present invention includes a thermocouple. FIG. 3 is a schematic diagram illustrating an example of a susceptor according to the present invention. FIG. 3 is a schematic diagram illustrating an example of a susceptor according to the present invention. FIG. 2 is a schematic diagram illustrating a configuration of a mist CVD apparatus used in an example of the present invention.

  The film forming apparatus of the present invention is a film forming apparatus for transporting a mist composed of a raw material onto a substrate by a carrier gas to form a film, wherein a mist generator that atomizes the raw material to generate a mist, A carrier gas supply unit for supplying a carrier gas; and a supply pipe for supplying the mist generated by the mist generator to the substrate by the carrier gas, further accelerating the mist carried by the carrier gas to the substrate. There is no particular limitation as long as the mist accelerating means is provided. The type of the film forming apparatus is not particularly limited, and may be a mist CVD apparatus, a mist epitaxy apparatus, or a film forming apparatus using another mist method. In the present invention, the film forming apparatus is preferably a mist CVD apparatus or a mist epitaxy apparatus. The mist epitaxy apparatus is not particularly limited as long as the apparatus supplies a raw material in the form of a mist and grows a crystal thin film using information on an underlying substrate, and a means for accelerating the reaction is not particularly limited. For example, any means such as thermal energy, laser, plasma, and beam may be used.

  Hereinafter, the film forming apparatus of the present invention will be described with reference to the drawings, but the present invention is not limited to these drawings.

  FIG. 1 shows an example of a preferable film forming apparatus of the present invention. The film forming apparatus 10 includes a mist generator 3, carrier gas supply means 4, supply pipe 5, and susceptor 1.

  The carrier gas supply means is not particularly limited as long as it can supply a carrier gas, and the carrier gas is not particularly limited as long as it is a gaseous substance that can transport mist generated by atomizing a raw material onto a substrate. The carrier gas is not particularly limited, and examples thereof include an oxygen gas, a nitrogen gas, an argon gas, and a forming gas.

  The mist generator is not particularly limited as long as the mist can be generated by atomizing the raw material, and may be a known mist generator.In the present invention, the mist is generated by atomizing the raw material by ultrasonic waves. It is preferred that A mist obtained by using ultrasonic waves is preferable because it has an initial velocity of zero and floats in the air.For example, a mist that can be floated in space and conveyed as a gas instead of spraying like a spray Therefore, it is very suitable because there is no damage due to collision energy. The droplet size of the mist is not particularly limited, and may be a droplet of about several mm, but is preferably 50 μm or less, more preferably 1 to 10 μm. In addition, the raw material is not particularly limited as long as it can be atomized and can form a film from mist generated by the atomization.In the present invention, the raw material is preferably a solution, It is also preferable that a film can be formed by a thermal reaction. The obtained film may be a crystalline film or an amorphous film, but is preferably a crystalline film in the present invention. The crystal film may be a single crystal film or a polycrystal film, and is not particularly limited as long as the crystal is a main component.

  The film forming apparatus 10 shown in FIG. 1 is provided with an ultrasonic vibrator 2 in a water tank, and the ultrasonic vibrator 2 atomizes the raw material solution in the mist generator 3 to generate mist. ing. The mist generated by the mist generator 3 is configured to be conveyed into the supply pipe 5 by the carrier gas supplied from the carrier gas supply means 4. The film forming apparatus 10 also includes a tubular furnace 6. The supply pipe 5 is inserted into the tubular furnace 6, and the substrate and the susceptor 1 in the supply pipe 5 are set in the tubular furnace, thereby forming a film by a thermal reaction. It is configured to be able to form a membrane.

  The supply pipe is not particularly limited as long as the mist generated by the mist generator can be supplied to the substrate by a carrier gas. The carrier gas is not particularly limited as long as the object of the present invention is not impaired. Examples of suitable examples include oxygen, ozone, an inert gas such as nitrogen or argon, or a reducing gas such as a hydrogen gas or a forming gas. No. In addition, the type of the carrier gas may be one type, but may be two or more types, and a diluted gas (for example, a 10-fold diluted gas or the like) with a reduced flow rate is further used as the second carrier gas. Is also good. In addition, the supply location of the carrier gas is not limited to one location, and may be two or more locations. The flow rate of the carrier gas is not particularly limited, but is preferably 0.01 to 20 L / min, and more preferably 1 to 10 L / min. In the case of a diluent gas, the flow rate of the diluent gas is preferably from 0.001 to 2 L / min, and more preferably from 0.1 to 1 L / min. The type and shape of the supply pipe are not particularly limited as long as the object of the present invention is not hindered, but in the present invention, the supply pipe is preferably a quartz pipe.

  The supply pipe may include a susceptor therein. When the film forming apparatus of the present invention includes a susceptor in the supply pipe, the supply pipe usually includes mist accelerating means. In the present invention, as the mist accelerating means, the susceptor preferably includes a mist accelerating unit for further accelerating the mist conveyed by the carrier gas to the substrate, and has a function of accelerating the mist by dripping. Loss can be more simply and efficiently prevented.

  In the present invention, a growth chamber may be provided directly or indirectly with the supply pipe, if desired. The growth chamber is not particularly limited as long as it is a film formation chamber for forming a film from mist. As long as the object of the present invention is not hindered, the system may be a closed system or an open system. A reaction vessel of any shape can be used for the growth chamber. Examples of the shape of the growth chamber include a polygon such as a cube and a rectangular parallelepiped, a cylinder, a prism, a cone, a pyramid, and the like. The growth chamber may be provided directly on the supply pipe, or may be provided indirectly via another processing chamber or the like. In addition, when the film forming apparatus of the present invention includes a susceptor in the growth chamber, the growth chamber usually includes a mist accelerating unit. Even in this case, the mist accelerating unit includes the mist accelerating unit. It is preferable that the susceptor includes a mist accelerating unit for further accelerating the mist carried by the carrier gas to the substrate.

Since the mist accelerating means further accelerates the mist carried by the carrier gas, an acceleration different from the gravitational acceleration is applied to the mist carried by the carrier gas, not by gravity or by the carrier gas. The acceleration is not particularly limited, but is preferably 0.01~100m / ^{s 2,} more preferably from 0.1 to 10 m / ^{s 2,} and even a 0.5 to 5 m / ^{s 2} Most preferred. Needless to say, the acceleration means an acceleration other than the gravitational acceleration applied to the mist being conveyed by the carrier gas.

  The mist accelerating means is not particularly limited as long as the mist conveyed by the carrier gas can be further accelerated to the substrate. The mist may be accelerated immediately before the substrate, or may be accelerated from the inlet of the supply pipe. The mist may be accelerated from any time from the generation of the mist to the substrate. Examples of the acceleration unit include, for example, a unit that gradually reduces the flow area of the mist, a unit that uses a blowing fan or an intake fan, and a unit that uses an electric field, a magnetic field, or a pressure field. For example, the downstream part of the mist is made narrower than the upstream part so that the flow of the mist is accelerated. In the present invention, it is necessary to pay attention to the loss of the function of accelerating the mist due to dripping.For example, even after the substrate, on the trajectory of the mist, there is no dripping or re-evaporation point of the dripping. In view of the above, it is important that the function of accelerating the mist be developed while avoiding the loss of the function of accelerating the mist due to the dripping. In the present invention, the mist accelerating means is preferably a means for accelerating and raising the mist.

  The susceptor is not particularly limited as long as it can hold a substrate, but in the present invention, it is preferable that the susceptor has means for burying and holding a substrate. The material of the susceptor is not particularly limited, but in the present invention, the susceptor is preferably made of quartz. Further, in the present invention, it is preferable that the susceptor includes a mist accelerating unit for accelerating the mist to the substrate as the mist accelerating means.

Further, it is preferable that the whole or a part of the outer peripheral shape of the susceptor is substantially the same along the inner periphery of the supply pipe or the growth chamber, and when the susceptor is provided in the supply pipe. It is preferable that the whole or a part of the outer peripheral shape of the susceptor is a substantially circular shape or a part thereof which is substantially the same along the inner periphery of the supply pipe, and the substrate side surface of the susceptor is preferably More preferably, the outer peripheral shape is substantially semicircular. By using such a preferred susceptor, not only can the mist be accelerated more efficiently, but also the adverse effect of dripping can be avoided more efficiently.
The term “substantially the same” may not be completely the same, for example, may be the same as the relationship between a circle and an ellipse to the extent that each effect of the present invention is achieved.
The term "substantially circular" refers to not only a circular shape but also an elliptical shape or any other curved surface close to a circular shape such as a parabolic phase.
The term “substantially semi-circular” refers to not only a semi-circular shape but also a semi-elliptical shape or any other curved surface close to a semi-circular shape such as a parabolic phase.

  In the present invention, the susceptor preferably has means for holding the substrate at an angle, and more preferably, the inclination angle of the substrate with respect to the center axis of the mist flow path is 5 ° to 60 °. , 30 ° to 50 °, and most preferably 35 ° to 47 °. By using such a preferable susceptor, a more uniform film can be obtained.

  Hereinafter, preferred embodiments of the susceptor will be described with reference to the drawings, but the present invention is not limited to these embodiments.

  FIG. 2 shows an example of a preferred susceptor of the present invention. The susceptor 101 in FIG. 2 includes a mist accelerating unit 102, a substrate holding unit 103, and a supporting unit 104.

  The mist accelerating unit 102 has a substantially semicircular shape, and is configured to be capable of accelerating and rising a settling mist when disposed in the supply pipe. The substrate holding portion 103 is a concave portion that fits into the substrate, and is configured to embed and hold the substrate. The support portion 104 is configured to hold the substrate at an angle.

  FIG. 3 shows one embodiment of a susceptor located in the supply. The susceptor 101 illustrated in FIG. 3 includes a mist accelerating unit 102, a substrate holding unit 103, and a support unit 104. The susceptor illustrated in FIG. The support portion 104 is rod-shaped, and is configured such that the angle of contact with the supply tube 105 of the support portion 104 is changed to about 90 ° by changing the angle on the way. With such a configuration, the stability of the susceptor 101 is improved.

  FIG. 3A shows a cross section of the supply pipe from the upstream to the downstream of the mist to the substrate, and the outer peripheral shape of the substrate side surface of the supply pipe is substantially semicircular. It can be seen that the shapes are substantially the same along the inner circumference of the supply pipe. FIG. 3B shows a cross section of the supply pipe, the substrate, and the susceptor when the upstream of the mist is on the left and the downstream is on the right. The mist is apt to settle in the supply pipe due to its nature, but the susceptor 101 is provided with the mist accelerating unit 102 inclined so that the settled mist can be accelerated and raised to be transferred to the substrate 103. .

  FIG. 4 shows a region of the susceptor and the substrate shown in FIG. 3 as a substrate / susceptor region 111 and a region for discharging unreacted mist as a discharge region 112 in the supply pipe 105. The relationship between the total area and the area of the discharge region can be understood. In the present invention, as shown in FIG. 4, in the cross section of the supply pipe or the growth chamber divided into a susceptor region occupied by the susceptor, the substrate region, and a discharge region for discharging unreacted mist, It is preferable that the total area of the susceptor region and the substrate is larger than the area of the discharge region. By using such a preferable susceptor, mist can be accelerated more favorably, and a more uniform film can be obtained.

  In the present invention, it is preferable that the flow direction of the mist to be accelerated is parallel or substantially parallel to the substrate. The term “parallel or substantially parallel” is intended to include not only the case where the substrate is parallel to the main surface of the substrate but also the case where the main surface of the substrate forms an angle within ± 30 °. FIG. 5 shows the inside of the tubular furnace at the time of film formation. In FIG. 5, the susceptor shown in FIG. 3 is used. As shown in FIG. 5, the mist 108a conveyed into the supply pipe is settled to form an uneven and thick mist layer. However, according to the present invention, the mist 108b is supplied by the mist accelerating means 102 of the susceptor. Is accelerated and a uniform film can be obtained. Moreover, the acceleration of the mist is not hindered by the dripping 108c.

  The susceptor used in the present invention can take various shapes and forms as long as the object of the present invention is not hindered. However, as shown in FIGS. 6 and 7, the susceptor may further include an upper plate and the like. The upper plate 126 is supported by upper support portions 127 provided at two places on the left and right sides of the substrate side surface. The acceleration of the mist can be controlled by the upper plate 126.

  FIG. 8 shows a preferred example in which the susceptor according to the present invention includes a thermocouple. In the susceptor of FIG. 8, a thermocouple 135 is mounted on the support 134. By using such a susceptor, the temperature of the substrate can be monitored, so that the temperature control is also excellent.

  The position and size of the substrate holding unit are not particularly limited as long as the object of the present invention is not hindered. For example, as shown in FIG. Alternatively, as shown in FIG. 10, the substrate holding unit 103 that can embed a large-sized substrate may be used. In the present invention, the shape and size of the substrate holding unit are changed to the shape and size of the substrate. Can be set appropriately in accordance with.

  In the present invention, it is preferable that the mist is accelerated to the substrate and the film is formed by a thermal reaction. The thermal reaction may be performed as long as the mist reacts with heat, and the reaction conditions are not particularly limited as long as the object of the present invention is not hindered. In the present invention, the thermal reaction is usually performed at a temperature equal to or higher than the evaporation temperature of the raw material solvent, but is preferably not higher than 700 ° C., more preferably not higher than 600 ° C. The lower limit is not particularly limited as long as the object of the present invention is not hindered, but is preferably 100 ° C or higher, more preferably 110 ° C or higher. The thermal reaction may be performed in any of a vacuum, a non-oxygen atmosphere, a reducing gas atmosphere, and an oxygen atmosphere as long as the object of the present invention is not hindered. It is preferably performed under an atmosphere. Further, the reaction may be performed under any of the conditions of atmospheric pressure, pressurization, and reduced pressure, but in the present invention, it is preferable to be performed under atmospheric pressure. Note that the film thickness can be set by adjusting the film formation time.

  Hereinafter, examples of the present invention will be described, but the present invention is not limited to these examples.

(Example 1)
The mist CVD apparatus 19 used in this embodiment will be described with reference to FIG. The mist CVD apparatus 19 includes a susceptor 21 on which a substrate 20 is placed, a carrier gas supply unit 22 for supplying a carrier gas, a flow control valve 23 for controlling a flow rate of the carrier gas sent from the carrier gas supply unit 22, A mist generating source 24 containing a raw material solution 24a, a container 25 containing water 25a, an ultrasonic vibrator 26 attached to the bottom of the container 25, and a supply pipe 27 made of a quartz tube having an inner diameter of 40 mm, A heater 28 is provided around the supply pipe 27. The susceptor 21 is made of quartz, and a surface on which the film-forming sample 20 is mounted is inclined from a horizontal plane. By forming both the supply pipe 27 and the susceptor 21 from quartz, it is possible to prevent impurities from the apparatus from being mixed into the film formed on the substrate 20.
Note that an α-Ga ₂ O ₃ film was formed using the susceptor shown in FIG. 3 as the susceptor 21. The film forming conditions are as follows. The inclination angle of the susceptor was 45 °, and the total area of the substrate and the susceptor in the supply pipe was large in the susceptor region and narrow in the discharge region as shown in FIG.

<Deposition conditions>
An aqueous solution of gallium bromide and germanium oxide was prepared such that the atomic ratio of germanium to gallium was 1: 0.05. At this time, 10% by volume of a 48% hydrobromic acid solution was contained. Under condition 1, the concentration of germanium oxide was 5.0 × 10 ⁻³ mol / L.
The raw material solution 24a was stored in the mist generation source 24.

  Next, a 20 mm square c-plane sapphire substrate was placed on the sample stage 21 as the film formation sample 20, and the heater 28 was operated to raise the temperature in the film formation chamber 27 to 500 ° C. Next, the flow rate control valve 23 is opened, a carrier gas is supplied from the carrier gas source 22 into the film formation chamber 27, and the atmosphere in the film formation chamber 27 is sufficiently replaced with the carrier gas. Adjusted to min. Oxygen gas was used as a carrier gas.

Next, the ultrasonic vibrator 26 was vibrated at 2.4 MHz, and the vibration was propagated to the raw material solution 24a through the water 25a, so that the raw material solution 24a was made into fine particles to generate raw material fine particles.
The raw material fine particles are introduced into the film formation chamber 27 by the carrier gas, react in the film formation chamber 27, and form a film on the film formation sample 20 by a CVD reaction on the film formation surface of the film formation sample 20. Formed. The mist acceleration was 1.51 m / s ² .

The phases of the membrane were identified. The identification was performed by performing 2θ / ω scan at an angle of 15 to 95 degrees using an XRD diffractometer. The measurement was performed using CuKα radiation. As a result, the film formed using the raw material solution under Condition 1 was α-Ga ₂ O ₃ .

  Next, the film thickness at each point was measured, and the film thickness 342 nm at the central point was set to 0, and the distribution in the upper, lower, left and right directions was examined. Table 1 shows the results. The range of variation was 43 nm. Standard deviation was 14.12.

(Comparative Example 1)
An α-Ga ₂ O ₃ film was formed in the same manner as in Example 1 except that the susceptor of the tubular furnace type mist CVD apparatus described in Non-Patent Document 1 was used. The acceleration of the mist was 0. With respect to the obtained α-Ga ₂ O ₃ film, the film thickness at each point was measured, and the distribution was examined. Table 2 shows the results. The range of variation was 192 nm. Standard deviation was 71.19.

(Comparative Example 2)
A film was formed in the same manner as in Comparative Example 1, except that IGZO was formed at 350 ° C. instead of α-Ga ₂ O ₃ . The acceleration of the mist was 0. The thickness of each point of the obtained IGZO film was measured, and the distribution was examined. Table 3 shows the results. The range of variation was 110 nm. Standard deviation was 42.28.

(Comparative Example 3)
A film was formed in the same manner as in Comparative Example 1 except that ZnO was formed at 250 ° C. instead of α-Ga ₂ O ₃ . The acceleration of the mist was 0. With respect to the obtained ZnO film, the film thickness at each point was measured, and the distribution was examined. Table 4 shows the results. The range of variation was 440 nm. Standard deviation was 129.45.

  The mist CVD apparatus of the present invention can be used for various film formations, and is particularly useful for forming a crystal film or an oxide semiconductor.

REFERENCE SIGNS LIST 1 susceptor 2 ultrasonic oscillator 3 mist generator 4 carrier gas supply means 5 supply pipe 6 tubular furnace 10 film forming apparatus 19 mist CVD apparatus 20 substrate 21 susceptor 22 carrier gas supply means 23 flow control valve 24 mist generation source 24a raw material solution Reference Signs List 25 container 25a water 26 ultrasonic oscillator 27 film forming chamber 28 heater 101 susceptor 102 mist accelerating means 103 substrate holding unit 104 support unit 105 supply pipe 107 heater 108a mist (settling)
108b Mist (acceleration)
108c Liquid dripping 109 Substrate 111 Substrate / susceptor area 112 Discharge area 121 Susceptor 122 Mist accelerating means 123 Substrate holding section 124 Support section 125 Supply pipe 126 Upper plate 127 Upper support section 134 Support section 135 Thermocouple

Claims (12)

A film forming apparatus for transferring a mist of a raw material onto a substrate by a carrier gas to form a film,
A mist generator that atomizes the raw material to generate a mist,
Carrier gas supply means for supplying the carrier gas,
A supply pipe for supplying mist generated by the mist generator to the substrate by the carrier gas,
With
A susceptor for holding the substrate in the supply pipe or, if desired, in a growth chamber provided adjacent to the supply pipe, as mist accelerating means for further accelerating and raising the mist carried by the carrier gas to the substrate ; And a mist accelerating unit for accelerating the mist up to the substrate . The susceptor region in which the susceptor is occupied, and the substrate region, in vertical cross-section relative to the central axis of the supply pipe or the growth chamber of the mist flow passage is divided into a discharge area for discharging the mist of unreacted the the total area of the susceptor region and the substrate, the film formation apparatus according to claim 1, wherein greater than the area of the discharge region. All or part of the outer peripheral shape of the susceptor, deposition apparatus according to claim 1 or 2 is shaped so as to be substantially the same along the inner periphery of the supply pipe or the growth chamber. With the susceptor to the supply pipe, all or part of the outer peripheral shape of the susceptor, according to claim 1 to 3, a substantially circular or a portion thereof so as to be substantially the same along the inner periphery of the supply pipe The film forming apparatus according to any one of the above. 5. The film forming apparatus according to claim 4 , wherein an outer peripheral shape of the surface of the susceptor on the substrate side is substantially semicircular. The film forming apparatus according to any one of claims 1 to 5 , wherein the susceptor has means for holding the substrate at an angle. The film forming apparatus according to claim 6 , wherein an inclination angle of the substrate with respect to a center axis of the mist channel is 5 ° to 60 °. The film forming apparatus according to any one of claims 1 to 7 , wherein the susceptor has means for burying and holding the substrate. Mist acceleration means, to mist being conveyed by a carrier gas, further, the film formation apparatus according to any one of claims 1-8 for imparting an acceleration of 0.1 to 10 m / s ^2. Flow direction of the mist to accelerated it is, with respect to the substrate, parallel or substantially parallel film forming apparatus according to any one of claims 1-9. A film forming method in which a mist generated by atomizing a raw material is transferred onto a substrate held by a susceptor by a carrier gas to form a film,
A step of generating the mist by atomizing the material,
A carrier gas supply step of supplying the carrier gas,
A mist supply step of supplying to said substrate the mist by a carrier gas,
Including
In the mist supply step, a mist carried by the carrier gas is further accelerated and raised to the substrate using the susceptor . A film formed by the film forming method according to claim 11 .