JP6583930B2 - Sputtering apparatus and organic EL panel manufacturing method - Google Patents

Description

The present invention relates to a sputtering apparatus, and more particularly, to a magnetron type sputtering apparatus and an organic EL panel in which a magnet is disposed on the back side of a target, a loop-shaped magnetic flux is formed in the vicinity of the target surface to trap electrons and concentrate plasma . It relates to a manufacturing method .

In the production of organic EL panels, it is effective to use a larger substrate in order to reduce the mass production cost. At the time of panel production, it is normal to perform vapor deposition by resistance heating for film formation of the upper electrode. However, the uniformity of the film thickness distribution of the electrode film to be formed decreases or melts as the substrate size increases. There is a problem that the performance of the panel is deteriorated due to an increase in the temperature of the underlying organic film or the substrate due to metal radiant heat or the like.
Therefore, in order to solve the problem of the film thickness distribution uniformity and the performance degradation due to radiant heat, the film formation of the electrode by the sputtering method is examined instead of the film formation by vacuum vapor deposition.
As a conventional sputtering apparatus, for example, the one described in Patent Document 1 is known. That is, a sputtering apparatus for forming a film on a substrate to be processed by relative movement of the substrate to be processed and the target, comprising a target and a magnet for forming a magnetic field on the surface of the target, and in the vicinity of the surface of the target A loop-shaped magnetic flux is formed on the substrate, and ionization of argon gas or the like is promoted by electrons trapped in the magnetic flux to concentrate the plasma, thereby increasing the sputtering efficiency of the target.

Japanese Patent Laid-Open No. 2006-132807

However, the sputtering apparatus of Patent Document 1 has a problem in that the underlying layer is damaged by ultraviolet rays or charged particles caused by the generated plasma. In particular, the damage is large when an organic film is formed on the underlayer.
An object of the present invention is to provide a sputtering apparatus and an organic EL panel manufacturing method capable of reducing damage to a substrate to be processed by ultraviolet rays or charged particles caused by plasma.

In order to achieve the above object, the first invention provides a vacuum chamber in which an inert gas is supplied and a substrate to be processed and a target are arranged to face each other.
Voltage application means for applying a voltage between the substrate to be processed and the target for discharging;
A magnet that forms a magnetic field on the surface of the target,
The substrate to be processed and the target move relative to each other, and a sputtering apparatus for forming a film by passing through a scattering region of sputtered particles scattered from the target,
When the direction of movement of the substrate to be processed when the substrate to be processed is viewed from the target is a transport direction, the magnet includes a central magnet extending in a direction orthogonal to the transport direction, and a periphery surrounding the central magnet A configuration including a magnet,
Between the target and the substrate to be processed, a shielding member that shields the substrate to be processed from sputtered particles scattered from the target is provided on the upstream side in the transport direction of the substrate to be processed.
A straight line extending through the center in the transport direction on the magnetic pole of the central magnet and extending in a direction perpendicular to the target surface is a central reference line,
A straight line drawn through the upstream end in the transport direction of the peripheral magnet and parallel to the central reference line is a first boundary line, and a straight line drawn through the downstream end of the peripheral magnet in the transport direction and parallel to the central reference line is Assuming two boundaries,
An end of the shielding member on the scattering region side is located in a region sandwiched between the first boundary line and the second boundary line,
The shielding member includes a first deposition preventing plate disposed at a position facing the magnet through the target, and a second shielding plate disposed at a position facing the substrate to be processed in the shielded state. With a plate,
A positive potential is applied to the first deposition preventive plate, and a negative potential is applied to the second deposition preventive plate .

In addition, the second invention,
A vacuum chamber in which an inert gas is supplied, and a substrate to be processed and a target are arranged to face each other;
Voltage application means for applying a voltage between the substrate to be processed and the target for discharging;
A magnet that forms a magnetic field on the surface of the target,
The substrate to be processed and the target move relative to each other, and a sputtering apparatus for forming a film by passing through a scattering region of sputtered particles scattered from the target,
When the direction of movement of the substrate to be processed when the substrate to be processed is viewed from the target is a transport direction, the magnet includes a central magnet extending in a direction orthogonal to the transport direction, and a periphery surrounding the central magnet A configuration including a magnet,
Between the target and the substrate to be processed, a shielding member that shields the substrate to be processed from sputtered particles scattered from the target is provided on the upstream side in the transport direction of the substrate to be processed.
When a range in which the substrate to be processed is transported with respect to the target is a transport surface,
A mountain-shaped distribution in which the deposition rate, which is the deposition amount per unit time when the sputtered particles emitted from the target are deposited on the transport surface, decreases from the transport position where the peak is reached toward the upstream side and the downstream side. And
The portion shielded by the shielding member is a midway position between the upstream peripheral portion and the peak in the mountain-shaped distribution of the film formation rate, or between the peak and the peripheral portion on the downstream side beyond the peak. Until halfway,
The shielding member includes a first deposition preventing plate disposed at a position facing the magnet through the target, and a second shielding plate disposed at a position facing the substrate to be processed in the shielded state. With a plate,
A positive potential is applied to the first deposition preventive plate, and a negative potential is applied to the second deposition preventive plate .
Furthermore, the manufacturing method of the organic EL panel of the present invention includes:
A substrate to be processed having an organic film as a base layer and a target are arranged facing each other inside a vacuum chamber to which an inert gas is supplied,
A voltage is applied between the substrate to be processed and the target to be discharged by voltage application means, and
A magnetic field is formed on the surface of the target by a magnet,
A method for manufacturing an organic EL panel in which the substrate to be processed is moved relative to the target and passed through a scattering region of sputtered particles scattered from the target, and the organic EL panel is formed on the organic film of the substrate to be processed. There,
When the direction of movement of the substrate to be processed when the substrate to be processed is viewed from the target is a transport direction, the magnet includes a central magnet extending in a direction orthogonal to the transport direction, and a periphery surrounding the central magnet A configuration including a magnet,
Provided between the target and the substrate to be processed is a shielding member that shields the substrate to be processed from sputtered particles scattered from the target on the upstream side in the transport direction of the substrate to be processed.
A straight line extending through the center in the transport direction on the magnetic pole of the central magnet and extending in a direction perpendicular to the target surface is a central reference line,
A straight line drawn through the upstream end in the transport direction of the peripheral magnet and parallel to the central reference line is a first boundary line, and a straight line drawn through the downstream end of the peripheral magnet in the transport direction and parallel to the central reference line is Assuming two boundaries,
The end of the shielding member on the scattering region side is positioned in a region sandwiched between the first boundary line and the second boundary line,
The shielding member includes a first deposition preventing plate disposed at a position facing the magnet through the target, and a second shielding plate disposed at a position facing the substrate to be processed in the shielded state. With a plate,
A positive potential is applied to the first deposition preventive plate, and a negative potential is applied to the second deposition preventive plate .
Furthermore, the manufacturing method of the other organic electroluminescent panel of this invention is as follows.
A substrate to be processed and a target are arranged opposite to each other inside a vacuum chamber to which an inert gas is supplied,
While applying a voltage between the substrate to be processed and the target by voltage application means to discharge,
A magnetic field is formed on the surface of the target by a magnet,
A method for manufacturing an organic EL panel in which the substrate to be processed is moved relative to the target and passed through a scattering region of sputtered particles that are scattered from the target. There,
When the direction of movement of the substrate to be processed when the substrate to be processed is viewed from the target is a transport direction, the magnet includes a central magnet extending in a direction orthogonal to the transport direction, and a periphery surrounding the central magnet A configuration including a magnet,
Provided between the target and the substrate to be processed is a shielding member that shields the substrate to be processed from sputtered particles scattered from the target on the upstream side in the transport direction of the substrate to be processed.
When a range in which the substrate to be processed is transported with respect to the target is a transport surface,
A mountain-shaped distribution in which the deposition rate, which is the deposition amount per unit time when the sputtered particles emitted from the target are deposited on the transport surface, decreases from the transport position where the peak is reached toward the upstream side and the downstream side. And
The portion shielded by the shielding member is a midway position between the upstream peripheral portion and the peak in the mountain-shaped distribution of the film formation rate, or between the peak and the peripheral portion on the downstream side beyond the peak. Until halfway,
The shielding member includes a first deposition preventing plate disposed at a position facing the magnet through the target, and a second shielding plate disposed at a position facing the substrate to be processed in the shielded state. With a plate,
A positive potential is applied to the first deposition preventive plate, and a negative potential is applied to the second deposition preventive plate .

  ADVANTAGE OF THE INVENTION According to this invention, the damage which a to-be-processed substrate receives by the ultraviolet-ray and charged particle which originate in plasma can be reduced.

(A) is a schematic longitudinal cross-sectional view of the sputtering apparatus of Embodiment 1, (B) is the top view which shifted the to-be-processed substrate. (A) is a perspective view of a shielding member and a rotation target, (B) is a top view of a magnet, (C) is a figure which shows the other applied voltage to a shielding member. The figure which shows the film-forming rate distribution to a conveyance surface. The figure which shows typically the shielding part of film-forming rate distribution. The figure which shows the other example of arrangement | positioning of the rotation target of FIG. 1, and a to-be-processed substrate. The figure which shows the further example of arrangement | positioning of the rotation target of FIG. 1, and a to-be-processed substrate. The figure which shows the further example of arrangement | positioning of the rotation target of FIG. 1, and a to-be-processed substrate. FIG. 6 is a diagram schematically illustrating a shielding portion of a film formation rate distribution according to the second embodiment. The figure which shows the other example of arrangement | positioning of the flat plate target of FIG. 8, and a to-be-processed substrate. The schematic diagram which shows the relationship between the erosion area | region and shielding member of Embodiment 2. FIG. The schematic diagram of an erosion area | region production | generation process. The schematic diagram which shows the other structural example of FIG. The figure which shows the other example of arrangement | positioning of the flat plate target of FIG. 8, and a to-be-processed substrate.

Hereinafter, the present invention will be described in detail based on illustrated embodiments. However, the following embodiments are merely illustrative of preferred configurations of the present invention, and the scope of the present invention is not limited to these configurations. In addition, the manufacturing conditions, dimensions, materials, shapes, and the like of the device in the following description are not intended to limit the scope of the present invention only to those unless otherwise specified.
FIG. 1 schematically shows a sputtering apparatus of the present invention, wherein (A) is a schematic view of an internal structure viewed from the front, (B) is a schematic view of the internal structure viewed from the top, and (A) It is the figure which moved the substrate holder to the downstream with respect to FIG.
The sputtering apparatus 1 is used for manufacturing an organic EL panel, for example. In the case of an organic EL panel, the substrate 40 is a substrate 41 on which an organic film 42 is formed, and a sputtering device 1 is used to form a film to be an electrode on the organic film 42 by sputtering. It is.
The sputtering apparatus 1 includes a vacuum chamber 10 to which an inert gas such as argon is supplied, and a cylindrical rotating target 20 as a target disposed in the vacuum chamber 10 so as to face the substrate to be processed 40. Yes. In addition, a cathode electrode 60 that is a voltage applying means for applying a voltage between the substrate to be processed 40 and the rotating target 20 to discharge, and a magnet 30 that forms a magnetic field on the surface of the rotating target 20 are provided. Then, the substrate 40 to be processed moves relative to the rotary target 20, and passes through a scattering region of sputtered particles scattered from the rotary target 20, thereby forming a film on the substrate 40 to be processed.

Assuming that the direction of movement of the substrate 40 to be processed when the substrate 40 is viewed from the rotation target 20 is the transport direction X, the magnet 30 includes a central magnet 31 extending in a direction orthogonal to the transport direction X, and the central magnet 31. And a peripheral magnet 32 surrounding the. Between the rotation target 20 and the substrate to be processed 40, a shielding member 50 that shields the substrate to be processed 40 from sputtered particles scattered from the rotation target 20 is provided on the upstream side in the transport direction of the substrate to be processed 40.
For the magnet 30, the following center reference line N0 and first and second boundary lines N1 and N2 are defined. That is, a straight line passing through the center in the transport direction on the magnetic pole of the center magnet 31 and extending in a direction orthogonal to the target surface is defined as a center reference line N0, passing through the upstream end of the peripheral magnet 32 in the transport direction and drawn parallel to the center reference line N0. The straight line is defined as the first boundary line N1. A straight line passing through the downstream end of the peripheral magnet 32 in the transport direction and drawn in parallel with the central reference line N0 is defined as a second boundary line N2.
In the illustrated example, the center reference line N0 is inclined at a predetermined angle upstream in the transport direction with respect to the direction orthogonal to the transport surface S of the substrate to be processed 40, and the first and second boundary lines N1, N2 Is also inclined.
With respect to the inclined first and second boundary lines N1 and N2, the position of the shielding member 50 is sandwiched between the first boundary line N1 and the second boundary line N2 by the end C on the scattering region side of the shielding member 50. It is comprised so that it may be located in the area | region W.

Hereinafter, each component will be described in detail.
In the vacuum chamber 10, a pair of guide rails 11 that guide the substrate to be processed 40 are arranged in parallel in the horizontal direction, and both ends of the substrate holder 45 that supports the substrate to be processed 40 are supported by the guide rail 11. The transport surface is driven and transported in the horizontal direction from the upstream side to the downstream side, and the transport surface is maintained in a horizontal plane by the guide rail 11. The side length in the direction orthogonal to the transport direction of the substrate to be processed 40 is smaller than the length of the substrate to be processed 40, is supported at the center of the substrate to be processed, and is held by the clamp 46.
The substrate 40 to be processed is carried, for example, from the inlet gate 12 provided on the upstream side wall of the vacuum chamber 10 and discharged from the outlet gate 13 provided on the downstream side wall after film formation. The drive mechanism for the substrate holder 45 is not particularly shown, but may be a linear motor, or various drive mechanisms such as a mechanism using a ball screw that converts the rotational motion of the rotary motor into a linear motion may be used. it can.
The shielding member 50 is disposed at a position facing the vertical deposition plate 51 as a first deposition plate disposed at a position facing the magnet 30 via the rotary target 20 and the substrate 40 to be processed in a shielded state. A horizontal deposition preventing plate 52 as a second deposition preventing plate. In this embodiment, the vertical deposition plate 51 extends in the vertical direction, and the horizontal deposition plate 52 extends in the horizontal direction, and has an inverted L shape as a whole. In this embodiment, both the vertical deposition plate 51 and the horizontal deposition plate 52 are provided. However, any one of the vertical deposition plate 51 and the horizontal deposition plate 52 may be used as long as the low rate portion having a low film formation rate can be shielded. It is sufficient that either one is provided.

Further, in this embodiment, the vertical deposition plate 51 and the horizontal deposition plate 52 are insulated via an insulating partition member 53, and different vertical potentials are applied to the vertical deposition plate 51 and the horizontal deposition plate 52. ing. That is, a positive potential is applied to the vertical deposition plate 51 by the first bias power source 71, and a minus potential is applied to the horizontal deposition plate 52 by the second bias power source 72.
The magnitude of the bias potential is desirably 2 V to 10 V in the case of a positive potential, and −2 V to −10 V in the case of a negative potential.
The vacuum chamber 10 is provided with a supply unit 80 for supplying argon gas into the chamber.
The rotary target 20 is a cylindrical member made of a material that forms an electrode film, and is rotatably supported around a rotation axis that is orthogonal to the transport direction X and extends in parallel to the transport surface. Yes. In the illustrated example, both ends of the rotation target 20 are supported by support bases 22 and 22 and are driven by a rotation motor (not shown).
A cylindrical cathode electrode 60 is disposed on the inner periphery of the rotary target 20, and a power source 70 that generates an electric field for generating sputtering is connected to the cylindrical cathode electrode 60.
The magnet 30 is disposed above the inside of the rotary target 20 via the cathode electrode 60 inside the rotary target 20.
In the magnet 30, the center magnet 31 and the peripheral magnet 32 have opposite polarities, and the magnetization direction of the center magnet 31 is the direction of the center reference line N0. Since the rotation target 20 is cylindrical, the extension line of the center reference line N0 intersects the rotation axis Y of the rotation target 20, and the center reference line N0 extends along the radiation of the rotation target 20.
As shown in FIG. 2B, the peripheral magnet 32 includes a pair of linear portions 32a and 32a extending in parallel with a predetermined distance from the central magnet 31, and rotating portions 32b and 32b connecting both ends of the linear portions 32a and 32a. It is equipped with. The shape of the rolling portions 32b and 32b may be formed in an arc shape. The magnetization direction of the peripheral magnet 32 extends in parallel with the central magnet 31, and the central magnet 31 and the inner end of the peripheral magnet 32 are connected by a yoke 33.
Thereby, the magnetic field in the vicinity of the surface of the rotating target 20 has lines of magnetic force that return in a loop from the magnetic pole of the central magnet 31 toward the linear portions 32a and 32a of the peripheral magnet 32, and electrons are captured by this magnetic field, Plasma is concentrated in the vicinity of the surface of the target 20 to increase the sputtering efficiency.
In FIG. 1, an elliptical loop L described in the vicinity of the surface of the rotating target 20 schematically shows a portion where the plasma is concentrated. Sputtered particles are observed from the point where the magnetic flux density component in the normal direction on the surface of the target 20 is zero. Is known to scatter intensively.
Since this point is located between the straight portions 32a and 32a of the central magnet 31 and the peripheral magnet 32, this is the deposition amount per unit time when the sputtered particles emitted from the rotating target 20 are deposited on the transport surface. As shown in FIG. 3, the deposition rate distribution is a mountain-shaped distribution that decreases from the peak transfer position toward the upstream side and the downstream side.

FIG. 3A shows a case where the center reference line N0 is orthogonal to the transport surface S. In this case, the peak is near the center reference line N0. As shown in FIG. 3B, when the substrate is inclined to the upstream side in the transport direction with respect to the direction orthogonal to the transport surface S of the substrate to be processed 40, the peak portion is from the center position of the transport surface. It shifts to the upstream side, and the peak decreases slightly. Although not shown in the drawings, when the vehicle is tilted downstream in the transport direction, it shifts from the center position of the transport surface to the downstream side.
In this embodiment, as shown in FIG. 3, the film formation rate distribution is assumed by the shielding member 50 when the deposition rate is assumed to be deposited on the transport surface S of the substrate 40 to be processed by the sputtered particles emitted from the rotary target 20. A low film formation rate portion on the upstream side of the film rate distribution is shielded. As a result, a thick film is formed on the front end portion of the substrate 40 immediately after the substrate 40 enters the scattering region from the initial stage of film formation, and damage to charged organic particles and ultraviolet rays on the organic film as the underlayer is reduced. It is to reduce.

FIG. 4 schematically shows the film formation rate R distribution on the transfer surface S, the shielding portion R1 by the shielding member 50, and the film formation state according to the transfer position in the embodiment of FIG.
In this example, the position of the shielding member 50 with respect to the first and second boundary lines N1 and N2, and the end portion C on the scattering region side of the shielding member 50 are the first boundary line N1 and the second boundary line N2. Since it is configured so as to be located in the sandwiched region, film formation is started in a region where the film formation rate R is close to the peak (a region with a high rate). That is, the portion R1 upstream of the peak of the distribution curve of the film formation rate R is shielded by the shielding member 50, thereby reducing the damage of charged particles and ultraviolet rays to the organic film 42 that is the underlayer.
The film formation rate R2 in the spattered particle scattering region is a portion downstream from the peak, and the substrate to be processed 40 has a region (H) where the film formation rate R is fast (H), an intermediate region (M), and a slow region (L) After that, it finally reaches an area where the rate is zero, and uniform film formation can be obtained. In the figure, the layers corresponding to the region (H) where the deposition rate R is fast, the middle region (M), and the slow region (L) are divided into three layers. Film is formed.

Further, since the vertical deposition preventive plate 51 is positively charged at the time of film formation, negative charged particles are adsorbed and damage to the organic film 42 of the substrate to be processed 40 can be further reduced. Furthermore, since a negative potential is applied to the horizontal deposition preventing plate 52, the entrance of electrons and negative charged particles can be prevented, and damage to the organic film 42 that has not been formed can be reduced.
When the dust falls on the rotating target 20, if the dust is insulative (the metal also becomes insulative when oxidized), it is charged and arc discharge occurs. In the arc discharge, a large current flows locally, and dust and surrounding materials are melted to form particles and scattered in all directions and adhere to the substrate.
FIG. 2C is a reference example in which a positive potential is applied to both the vertical deposition plate 51 and the horizontal deposition plate 52 . In this case, it is not necessary to insulate the vertical deposition plate 51 and the horizontal deposition plate 52.
In the first embodiment, the end portion C on the scattering region side of the shielding member 50 is located on the first boundary line N1 even though it is between the first boundary line N1 and the second boundary line N2. However, the intermediate position between the 1st boundary line N1 and the 2nd boundary line N2 may be sufficient, and it may be located on the 2nd boundary line N2.

Further, although different from the first embodiment, as another invention, the portion shielded by the shielding member 50 is in the middle of the distribution from the peripheral portion on the upstream side to the peak in the mountain-shaped distribution of the deposition rate R. Or may be shielded from the peak on the downstream side beyond the peak to the midway position between the peripheral portions. If the part between the peak and zero and the part between zero and zero is shielded, the deposition can be started at a relatively high rate, and the organic film 42 which is the underlayer is damaged by the relatively thick film, and damage to the ultraviolet ray is caused. Can be reduced.
It is known that there is a relationship between the film formation rate of the material on the substrate 40 and the film quality. Since moisture and oxygen are contained as the released gas and residual gas from the walls of the vacuum chamber and the substrate to be processed 40 itself, when the film forming rate is low, it reacts with them to become an oxide, etc. The cause is considered to be that the film is formed differently from the composition. It is considered desirable to form a metal that easily oxidizes at a rate of 18 [nm / min] or higher, and it is effective to shield a portion of 18 [nm / min] or lower. Furthermore, considering the influence of ultraviolet rays or the like, about 30 to 60 [nm / min] is preferable.

5 to 7 show modified examples of the positional relationship between the rotary target 20 of the first embodiment and the substrate 40 to be processed.
FIG. 5A shows a configuration in which the central reference line N0 of the central magnet 31 is orthogonal to the transport surface S of the substrate 40 to be processed. The first and second boundary lines N1 and N2 are also orthogonal to the conveyance surface S, and the position of the shielding member 50 is scattered by the shielding member 50 with respect to the first and second boundary lines N1 and N2. The region-side end C is configured to be located in a region sandwiched between the first boundary line N1 and the second boundary line N2.
Even in this case, it is possible to cut the low rate portion on the upstream side of the film formation rate distribution and start the film formation from the high rate portion.
FIG. 5B is an example of oblique vapor deposition when the front end of the substrate 40 to be processed at the standby position is located downstream of the rotation target 20, contrary to the arrangement example of FIG.
In other words, the center reference line N0 of the center magnet 31 is inclined to the downstream side in the transport direction with respect to the direction orthogonal to the transport surface S of the substrate 40 to be processed. Similarly, the first and second boundary lines N1, N2 are also inclined to the downstream side in the transport direction with respect to the direction orthogonal to the transport surface S.
The position of the shielding member 50 with respect to the boundary lines N1 and N2 is the end C on the scattering region side of the shielding member 50.
Is configured to be located in a region sandwiched between the first boundary line N1 and the second boundary line N2.
Even in this case, it is possible to cut the low rate portion on the upstream side of the film formation rate distribution and start the film formation from the high rate portion.

FIG. 6 shows a configuration example in which the substrate 40 to be processed is fixed and the rotary target 20 is moved.
In this case, the rotary target 20 and the shielding member 50 move integrally.
The substrate 40 to be processed is fixed, and the rotary target 20 is transported, but this is the same as the case where the substrate 40 to be processed moves relative to the rotary target 20. A direction in which the relative movement of 40 is referred to as a conveyance direction X, and a range in which the relative movement is performed is referred to as a conveyance surface S.
FIG. 6A is a reference example of the present invention, and the center reference line N0 of the center magnet 31 is inclined upstream in the transport direction with respect to the direction orthogonal to the transport surface S of the substrate 40 to be processed. It is a configuration. Similarly, the first and second boundary lines N1 and N2 are also inclined to the downstream side in the transport direction with respect to the direction orthogonal to the transport surface S, and the shielding member 50 with respect to the first and second boundary lines N1 and N2. Is configured such that the end C of the shielding member 50 on the scattering region side is located in a region sandwiched between the first boundary line N1 and the second boundary line N2.
The shielding member 50 has a box cross-sectional shape that opens upward, and includes a first vertical protection plate 511 that is located downstream in the moving direction of the target, a second vertical protection plate 512 that is located upstream, and a bottom plate portion 54. It is equipped with.
Even in this manner, the first vertical deposition plate 511 can cut the low rate portion upstream of the deposition rate distribution and start the deposition from the high rate portion.
FIG. 6B shows a configuration in which the center reference line N0 of the center magnet 31 is inclined downstream in the transport direction with respect to the direction orthogonal to the transport surface S of the substrate 40 to be processed. The first and second boundary lines N1 and N2 are also inclined to the downstream side in the transport direction with respect to the direction orthogonal to the transport surface S.
The position of the shielding member 50 with respect to the second boundary lines N1 and N2 is such that the end C on the scattering region side of the shielding member 50 is located in a region sandwiched between the first boundary line N1 and the second boundary line N2. It is configured.
The shielding member 50 has a box cross-sectional shape, and a first vertical deposition plate 511 located on the downstream side in the moving direction of the rotary target 20 and a second vertical deposition plate lower than the first vertical deposition plate 511 located on the upstream side. 512, a horizontal deposition plate 52 extending horizontally from the upper end of the first vertical deposition plate 511 toward the downstream side, and a bottom plate portion connecting the lower ends of the first vertical deposition plate 511 and the second vertical deposition plate 512 54. In this example, the downstream end of the horizontal deposition preventing plate 52 is the end of the shielding member 50, and the low rate portion on the upstream side of the film formation rate distribution is cut, and the film formation is started from the high rate portion. It has become.

FIG. 6C shows a configuration in which the center reference line N0 of the center magnet 31 is orthogonal to the transport surface S of the substrate 40 to be processed. The first and second boundary lines N1, N2 are also orthogonal to the transport surface S, and the first,
The position of the shielding member 50 with respect to the second boundary lines N1 and N2 is such that the end C on the scattering region side of the shielding member 50 is located in a region sandwiched between the first boundary line N1 and the second boundary line N2. It is configured.
The shielding member 50 has a box cross-sectional shape, a first vertical deposition plate 511 located upstream in the moving direction of the rotary target 20, a second vertical deposition plate 512 located downstream, and a first vertical deposition plate. A first horizontal protection plate 521 extending horizontally from the upper end of 511 toward the downstream side; and a second horizontal protection plate 522 extending horizontally from the upper end of the second vertical protection plate 512 toward the upstream side. Yes.
In this example, the first horizontal deposition plate 521 and the second horizontal deposition plate 522 cut not only the upstream side of the deposition rate distribution but also the lower rate portion on the downstream side. Up to this point, the film can be formed only by the high rate part.

In the above embodiment, the example in which the substrate to be processed is positioned above the target has been described. However, the substrate to be processed 40 may be positioned below the rotating target 20 as shown in FIG. In the following description, the arrangement of the substrate to be processed 40 and the rotation target 20 shown in FIGS. 1 and 5 is merely reversed upside down, and the basic configuration is the same, so the same components are the same. The description will be omitted.
8A, contrary to FIG. 1A, the substrate 40 to be processed is located below the rotary target 20, and the center reference line N0 of the center magnet 31 is orthogonal to the transport surface S of the substrate 40 to be processed. It is the structure which inclines to the conveyance direction upstream with respect to the direction to perform.
Similarly, the first and second boundary lines N1 and N2 are also inclined to the upstream side in the transport direction with respect to the direction orthogonal to the transport surface S, and the shielding member 50 with respect to the first and second boundary lines N1 and N2. The end C on the scattering region side is located in a region sandwiched between the first boundary line N1 and the second boundary line N2.
In FIG. 8B, the substrate 40 to be processed is positioned below the rotary target 20, and the center reference line N0 of the center magnet 31 is orthogonal to the transfer surface S of the substrate 40 to be processed, which is opposite to FIG. It is the composition to do.
The first and second boundary lines N1 and N2 are also configured to be orthogonal to the transport surface S, and the position of the shielding member 50 relative to the first and second boundary lines N1 and N2 is the scattering region side of the shielding member 50. End C of
It is configured to be located in a region sandwiched between the first boundary line N1 and the second boundary line N2.
FIG. 8C is a configuration in which the substrate 40 to be processed is positioned below the rotary target 20, and the center reference line N 0 of the center magnet 31 is the transport surface S of the substrate 40 to be processed, which is the reverse of FIG. It is the structure which inclined to the conveyance direction downstream with respect to the orthogonal direction.
Similarly, the first and second boundary lines N1 and N2 are also inclined to the downstream side in the transport direction with respect to the direction orthogonal to the transport surface S, and the shielding member 50 with respect to the first and second boundary lines N1 and N2. Is configured such that the end C of the shielding member 50 on the scattering region side is located in a region sandwiched between the first boundary line N1 and the second boundary line N2.

Next, Embodiment 2 of the present invention will be described.
The difference between the second embodiment and the first embodiment is that the target is not a rotating target but a flat plate target 220 having a flat plate shape. In the following description, points different from the first embodiment will be described, the same components are denoted by the same reference numerals, and description thereof will be omitted.
FIG. 8 shows an example in which the substrate 40 to be processed is positioned above the flat plate target 220 and the front end of the substrate 40 to be processed at the standby position is positioned upstream of the flat plate target 220 as in FIG. .
That is, the center reference line N0 of the center magnet 31 of the magnet 30 is inclined to the upstream side in the transport direction with respect to the direction orthogonal to the transport surface S of the substrate 40, and the first and second boundary lines N1 and N2 are also inclined to the upstream side in the transport direction with respect to the direction orthogonal to the transport surface S. Then, with respect to the first and second boundary lines N1 and N2, the position of the shielding member 50 is sandwiched between the first boundary line N1 and the second boundary line N2 at the end C on the scattering region side of the shielding member 50. Located in the area.
Then, the low rate portion on the upstream side of the film formation rate distribution is cut, and the film formation is started from the high rate portion.

9A and 9B are modified examples of the arrangement relationship between the magnet 30 and the shielding member 50 in FIG.
FIG. 9A shows a configuration in which the center reference line N0 of the magnet 30 is orthogonal to the transport surface S of the substrate 40, and the first and second boundary lines N1, N2 are also orthogonal to the transport surface S. The end C on the scattering region side of the shielding member 50 is located in a region sandwiched between the first boundary line N1 and the second boundary line N2.
FIG. 9B shows an example in which the substrate 40 to be processed is positioned above the flat plate target 220 and the front end of the substrate to be processed at the standby position is positioned upstream of the flat plate target.
That is, the central reference line N0 of the magnet 30 is configured to be orthogonal to the transport surface S of the substrate 40 to be processed, and the first and second boundary lines N1 and N2 are also orthogonal to the transport surface S. The end portion C on the side of 50 scattering regions is located in a region sandwiched between the first boundary line N1 and the second boundary line N2.

FIG. 10 shows the characteristic points of the second embodiment.
That is, since the flat plate target 220 does not move with respect to the magnet 30, the portion where the sputtering proceeds is fixed to a place where there is an erosion region 221 in which the surface of the flat plate target 220 is recessed in a ring shape. The erosion region 221 extends beyond the side length of the substrate to be processed 40 in a direction orthogonal to the moving direction of the substrate to be processed 40.
As shown in FIG. 11, the erosion region 221 gradually becomes deeper in proportion to the discharge time, but the width in the transport direction is almost constant regardless of the depth. The erosion region 221 is the portion where the sputtered particles are scattered most. If the position of the shielding member 50 is determined corresponding to the erosion region 221, film formation can be efficiently advanced at a high rate.
In FIG. 10, the end portion C on the scattering region side of the shielding member 50 is positioned on a straight line (normal line) in a direction orthogonal to the surface of the flat plate target 220 passing through the upstream end in the transport direction with respect to the flat plate target 220 in the erosion region 221. I am letting.
If positioning is performed in correspondence with the erosion region 221 in this way, film formation can be efficiently started at a higher rate.
In FIG. 12, the edge C on the scattering region side of the shielding member 50 is formed on the projection region obtained by projecting the region between the upstream end and the downstream end in the transport direction of the erosion region 221 in the direction orthogonal to the target surface. It is assumed to be positioned.
Even in this case, the erosion region 221 is a portion where the sputtered particles are scattered most, and if the position of the shielding member 50 is determined corresponding to the erosion region 221, film formation can proceed efficiently at a high rate. Can do.

FIG. 13 is a configuration example in which the substrate to be processed 40 is disposed below the flat plate target 220 in the second embodiment.
In FIG. 13A, contrary to FIG. 8A, the substrate 40 to be processed is positioned below the flat plate target 220, and the center reference line N0 of the center magnet 31 is orthogonal to the transport surface S of the substrate 40 to be processed. It is the structure which inclines to the conveyance direction upstream with respect to the direction to perform.
Similarly, the first and second boundary lines N1 and N2 are also inclined to the upstream side in the transport direction with respect to the direction orthogonal to the transport surface S, and the shielding member 50 with respect to the first and second boundary lines N1 and N2. An end portion C on the scattering region side is located in a region W sandwiched between the first boundary line N1 and the second boundary line N2.
13B is opposite to FIG. 9A, the substrate 40 to be processed is positioned below the flat plate target 220, and the center reference line N0 of the center magnet 31 is orthogonal to the transport surface S of the substrate 40 to be processed. It is the composition to do.
The first and second boundary lines N1 and N2 are also configured to be orthogonal to the transport surface S, and the position of the shielding member 50 relative to the first and second boundary lines N1 and N2 is the scattering region side of the shielding member 50. End C of
It is configured to be located in a region sandwiched between the first boundary line N1 and the second boundary line N2.
FIG. 13C is a configuration opposite to FIG. 9B, in which the substrate 40 to be processed is positioned below the flat plate target 220, and the center reference line N 0 of the center magnet 31 is the transport surface S of the substrate 40 to be processed. It is the structure which inclined to the conveyance direction downstream with respect to the orthogonal direction.
Similarly, the first and second boundary lines N1 and N2 are also inclined to the downstream side in the transport direction with respect to the direction orthogonal to the transport surface S, and the shielding member 50 with respect to the first and second boundary lines N1 and N2. Is configured such that the end portion C on the scattering region side of the shielding member 50 is located in a region W sandwiched between the first boundary line N1 and the second boundary line N2.
As for these arrangement configurations, as shown in FIGS. 10 and 12, the erosion region 221 passes through the upstream end in the transport direction and is on the straight line perpendicular to the surface of the flat plate target 220 on the scattering region side of the shielding member 50. The end C can be positioned, and the shielding member is formed on the projection region W2 in which the region between the upstream end and the downstream end in the transport direction of the erosion region 221 is projected in the direction orthogonal to the target surface. It can also comprise so that the edge part C by the side of 50 scattering areas may be located.
Although not particularly shown in the second embodiment, it is needless to say that a potential may be applied to the shielding member 50 as in the first embodiment.

1 sputtering equipment, 10 vacuum chamber,
20 Rotating target 30 magnet, 31 center magnet.
32 peripheral magnets, 32a linear part, 32b turning part 40 substrate to be processed, 42 organic film 50 shielding member,
51 Vertical deposition plate (first deposition plate),
52 Horizontal protective plate (second protective plate)
60 Cathode electrode (voltage application means)
70 power supply 71 first bias power supply, 72 second bias power supply 220 flat plate target, 221 erosion region C end N0 central reference line, N1 first boundary line, N2 second boundary line W at the first boundary line and the second boundary line Ripped area R Deposition rate, R1 Upstream shielded area S Conveying surface W2 Projection area X between upstream end and downstream end of erosion area Transport direction of substrate to be processed

Claims (13)

A vacuum chamber in which an inert gas is supplied, and a substrate to be processed and a target are arranged to face each other;
Voltage application means for applying a voltage between the substrate to be processed and the target for discharging;
A magnet that forms a magnetic field on the surface of the target,
The substrate to be processed and the target move relative to each other, and a sputtering apparatus for forming a film by passing through a scattering region of sputtered particles scattered from the target,
When the direction of movement of the substrate to be processed when the substrate to be processed is viewed from the target is a transport direction, the magnet includes a central magnet extending in a direction orthogonal to the transport direction, and a periphery surrounding the central magnet A configuration including a magnet,
Between the target and the substrate to be processed, a shielding member that shields the substrate to be processed from sputtered particles scattered from the target is provided on the upstream side in the transport direction of the substrate to be processed.
A straight line extending through the center in the transport direction on the magnetic pole of the central magnet and extending in a direction perpendicular to the target surface is a central reference line,
A straight line drawn through the upstream end in the transport direction of the peripheral magnet and parallel to the central reference line is a first boundary line, and a straight line drawn through the downstream end of the peripheral magnet in the transport direction and parallel to the central reference line is Assuming two boundaries,
An end of the shielding member on the scattering region side is located in a region sandwiched between the first boundary line and the second boundary line,
The shielding member includes a first deposition preventing plate disposed at a position facing the magnet through the target, and a second shielding plate disposed at a position facing the substrate to be processed in the shielded state. With a plate,
A sputtering apparatus , wherein a positive potential is applied to the first protective plate, and a negative potential is applied to the second protective plate .   The sputtering apparatus according to claim 1, wherein the target is a cylindrical member that is rotationally driven. The target is a flat plate member, and a continuous erosion region extending beyond the side length of the substrate to be processed is formed on the surface of the target in a direction orthogonal to the transport direction of the substrate to be processed. In the configuration,
The sputtering apparatus according to claim 1, wherein an end portion of the shielding member on the scattering region side is positioned on a straight line that passes through the upstream end in the transport direction of the erosion region and is orthogonal to the target surface. The target is a flat plate member, and a continuous erosion region extending beyond the side length of the substrate to be processed is formed on the surface of the target in a direction orthogonal to the transport direction of the substrate to be processed. In the configuration,
An end of the shielding member on the scattering region side is located on a projection region obtained by projecting the region between the upstream end and the downstream end in the transport direction of the erosion region in a direction orthogonal to the target surface. The sputtering apparatus according to claim 1. A vacuum chamber in which an inert gas is supplied, and a substrate to be processed and a target are arranged to face each other;
Voltage application means for applying a voltage between the substrate to be processed and the target for discharging;
A magnet that forms a magnetic field on the surface of the target,
The substrate to be processed and the target move relative to each other, and a sputtering apparatus for forming a film by passing through a scattering region of sputtered particles scattered from the target,
When the direction of movement of the substrate to be processed when the substrate to be processed is viewed from the target is a transport direction, the magnet includes a central magnet extending in a direction orthogonal to the transport direction, and a periphery surrounding the central magnet A configuration including a magnet,
Between the target and the substrate to be processed, a shielding member that shields the substrate to be processed from sputtered particles scattered from the target is provided on the upstream side in the transport direction of the substrate to be processed.
When a range in which the substrate to be processed is transported with respect to the target is a transport surface,
A mountain-shaped distribution in which the deposition rate, which is the deposition amount per unit time when the sputtered particles emitted from the target are deposited on the transport surface, decreases from the transport position where the peak is reached toward the upstream side and the downstream side. And
The portion shielded by the shielding member is a midway position between the upstream peripheral portion and the peak in the mountain-shaped distribution of the film formation rate, or between the peak and the peripheral portion on the downstream side beyond the peak. Until halfway,
The shielding member includes a first deposition preventing plate disposed at a position facing the magnet through the target, and a second shielding plate disposed at a position facing the substrate to be processed in the shielded state. With a plate,
A sputtering apparatus , wherein a positive potential is applied to the first protective plate, and a negative potential is applied to the second protective plate . Said portion is shielded by the shielding member, the film forming rate is 18 [nm / min] or less of the sputtering apparatus according to Oh Ru claim 5 in part. A central reference line passing through the center in the conveyance direction on the magnetic pole of the central magnet and extending in a direction orthogonal to the target surface is:
The sputtering apparatus of any one of Claims 1 thru | or 6 orthogonal to the conveyance surface of the said to-be-processed substrate. A central reference line passing through the center in the conveyance direction on the magnetic pole of the central magnet and extending in a direction orthogonal to the target surface is:
The sputtering apparatus according to claim 1, wherein the sputtering apparatus is inclined upstream in the transport direction with respect to a direction orthogonal to the transport surface of the substrate to be processed. A central reference line passing through the center in the conveyance direction on the magnetic pole of the central magnet and extending in a direction orthogonal to the target surface is:
7. The sputtering apparatus according to claim 1, wherein the sputtering apparatus is inclined downstream in the transport direction with respect to a direction perpendicular to the transport surface of the substrate to be processed.   The sputtering apparatus according to claim 1, wherein the substrate to be processed is disposed above the target.   The sputtering apparatus according to claim 1, wherein the substrate to be processed is disposed below the target. A substrate to be processed having an organic film as a base layer and a target are arranged facing each other inside a vacuum chamber to which an inert gas is supplied,
A voltage is applied between the substrate to be processed and the target to be discharged by voltage application means, and
A magnetic field is formed on the surface of the target by a magnet,
A method for manufacturing an organic EL panel in which the substrate to be processed is moved relative to the target and passed through a scattering region of sputtered particles scattered from the target, and the organic EL panel is formed on the organic film of the substrate to be processed. There,
When the direction of movement of the substrate to be processed when the substrate to be processed is viewed from the target is a transport direction, the magnet includes a central magnet extending in a direction orthogonal to the transport direction, and a periphery surrounding the central magnet A configuration including a magnet,
Provided between the target and the substrate to be processed is a shielding member that shields the substrate to be processed from sputtered particles scattered from the target on the upstream side in the transport direction of the substrate to be processed.
A straight line extending through the center in the transport direction on the magnetic pole of the central magnet and extending in a direction perpendicular to the target surface is a central reference line,
A straight line drawn through the upstream end in the transport direction of the peripheral magnet and parallel to the central reference line is a first boundary line, and a straight line drawn through the downstream end of the peripheral magnet in the transport direction and parallel to the central reference line is Assuming two boundaries,
The end of the shielding member on the scattering region side is positioned in a region sandwiched between the first boundary line and the second boundary line,
The shielding member includes a first deposition preventing plate disposed at a position facing the magnet through the target, and a second shielding plate disposed at a position facing the substrate to be processed in the shielded state. With a plate,
A method of manufacturing an organic EL panel , wherein a positive potential is applied to the first protective plate, and a negative potential is applied to the second protective plate . A substrate to be processed and a target are arranged opposite to each other inside a vacuum chamber to which an inert gas is supplied,
While applying a voltage between the substrate to be processed and the target by voltage application means to discharge,
A magnetic field is formed on the surface of the target by a magnet,
A method for manufacturing an organic EL panel in which the substrate to be processed is moved relative to the target and passed through a scattering region of sputtered particles scattered from the target, and the organic EL panel is formed on the organic film of the substrate to be processed. There,
When the direction of movement of the substrate to be processed when the substrate to be processed is viewed from the target is a transport direction, the magnet includes a central magnet extending in a direction orthogonal to the transport direction, and a periphery surrounding the central magnet A configuration including a magnet,
Provided between the target and the substrate to be processed is a shielding member that shields the substrate to be processed from sputtered particles scattered from the target on the upstream side in the transport direction of the substrate to be processed.
When a range in which the substrate to be processed is transported with respect to the target is a transport surface,
A mountain-shaped distribution in which the deposition rate, which is the deposition amount per unit time when the sputtered particles emitted from the target are deposited on the transport surface, decreases from the transport position where the peak is reached toward the upstream side and the downstream side. And
The portion shielded by the shielding member is a midway position between the upstream peripheral portion and the peak in the mountain-shaped distribution of the film formation rate, or between the peak and the peripheral portion on the downstream side beyond the peak. Until halfway,
The shielding member includes a first deposition preventing plate disposed at a position facing the magnet through the target, and a second shielding plate disposed at a position facing the substrate to be processed in the shielded state. With a plate,
A method of manufacturing an organic EL panel , wherein a positive potential is applied to the first protective plate, and a negative potential is applied to the second protective plate .

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