JP6578676B2 - Image reading apparatus and semiconductor device - Google Patents

Description

  The present invention relates to an image reading apparatus and a semiconductor device.

  An image reading device (scanner) using a contact image sensor, a copier or a composite printer having a printing function added thereto have been developed. As a contact image sensor used in an image reading apparatus, a configuration using a photodiode provided on a semiconductor substrate is used (Patent Document 1).

JP 2014-13806 A

  The contact image sensor manufacturing process includes a step of attaching and detaching a tape to the surface of the semiconductor substrate in order to protect the semiconductor substrate. If static electricity is generated when the tape is attached or detached, the photodiode may be destroyed. Therefore, it is necessary to provide an electrostatic protection region on the outer periphery of the semiconductor substrate including the photodiode.

  When a contact image sensor is used in the scanner, a plurality of contact image sensor chips are provided side by side. However, when the well in which the photodiode is formed is surrounded by an electrostatic protection region, when the chips are arranged, the distance between the photodiodes between the chips increases. This causes a problem that the read image quality deteriorates.

  The present invention has been made in view of the above technical problems. According to some aspects of the present invention, it is possible to provide an image reading apparatus and a semiconductor device that can reduce image quality deterioration while protecting against static electricity.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following aspects or application examples.

[Application Example 1]
The image reading apparatus according to this application example is
An image reading apparatus configured by arranging a plurality of image reading chips for reading an image in a one-dimensional direction,
The image reading chip is
A semiconductor substrate;
A light receiving element that is formed in a P well of the semiconductor substrate and photoelectrically converts light from the image;
A signal conversion unit that is formed outside the P well of the semiconductor substrate and generates an image reading signal that is a signal corresponding to the image from a signal generated by photoelectric conversion by the light receiving element;
A first protection region formed in the P well of the semiconductor substrate and electrostatically protecting the light receiving element;
A second protection region formed outside the P well of the semiconductor substrate and electrostatically protecting the signal conversion unit;
With
The first protection area is an image reading device provided along one side facing the adjacent image reading chip in the one-dimensional direction.

  According to this application example, in the manufacturing process, the first protection region can be provided at the end of the image reading chip, which is likely to generate static electricity when the tape is attached and detached, so that the light receiving element can be protected from static electricity. In addition, since the first protection region is formed in the same P well as the light receiving element, the edge of the image reading chip from the light receiving element on the end side of the image reading chip is compared with the case where the protection region is provided outside the P well. The distance to the part can be reduced. This can reduce image quality degradation. Accordingly, it is possible to realize an image reading apparatus that can reduce image quality degradation while protecting against static electricity.

[Application Example 2]
An image reading apparatus as described above,
The image reading chip may include a plurality of the light receiving elements positioned side by side in the one-dimensional direction.

  As a result, an image reading apparatus capable of reading a large image can be realized.

[Application Example 3]
An image reading apparatus as described above,
The semiconductor substrate has a shape including a first side and a second side longer than the first side,
At least one of the first protection region and the second protection region may be formed along the first side.

  When the tape is peeled off during the manufacturing process, the tape is generally peeled off in the direction along the second side. In such a case, since the tape is finally peeled off on the first side, the light receiving element on the first side and the circuit elements constituting the signal conversion unit are easily affected by static electricity.

  According to this application example, since at least one of the first protection region and the second protection region is formed along the first side, at least one of the light receiving element and the circuit element constituting the signal conversion unit is effective. Can be protected from static electricity.

[Application Example 4]
An image reading apparatus as described above,
The first protection region is formed of a P-type diffusion region,
The second protection region may be formed of an N type diffusion region.

  According to this application example, the circuit elements constituting the light receiving element and the signal conversion unit can be effectively protected from static electricity with a simple configuration.

[Application Example 5]
An image reading apparatus as described above,
At least one of the first protection region and the second protection region may be electrically connected to a metal wiring.

  According to this application example, the circuit elements constituting the light receiving element and the signal conversion unit can be effectively protected from static electricity more effectively than the case where the first protection region and the second protection region are configured only by the diffusion region. .

[Application Example 6]
The semiconductor device according to this application example is
A semiconductor device for reading an image,
A semiconductor substrate;
A light receiving element that is formed in a P well of the semiconductor substrate and photoelectrically converts light from the image;
A signal conversion unit that is formed outside the P well of the semiconductor substrate and generates an image reading signal that is a signal corresponding to the image from a signal generated by photoelectric conversion by the light receiving element;
A first protection region formed in the P well of the semiconductor substrate and electrostatically protecting the light receiving element;
A second protection region formed outside the P well of the semiconductor substrate and electrostatically protecting the signal conversion unit;
With
The semiconductor substrate has a shape including a first side and a second side longer than the first side,
At least one of the first protection region and the second protection region is a semiconductor device formed along the first side.

  According to this application example, in the manufacturing process, the first protection region can be provided at the end of the image reading chip, which is likely to generate static electricity when the tape is attached and detached, so that the light receiving element can be protected from static electricity. In addition, since the first protection region is formed in the same P well as the light receiving element, the edge of the image reading chip from the light receiving element on the end side of the image reading chip is compared with the case where the protection region is provided outside the P well. The distance to the part can be reduced. This can reduce image quality degradation when applied to an image reading apparatus. Therefore, it is possible to realize a semiconductor device capable of reducing image quality deterioration while protecting against static electricity.

  Moreover, when peeling a tape in a manufacturing process, it is common to peel a tape in the direction in alignment with a 2nd side. In such a case, since the tape is finally peeled off on the first side, the light receiving element on the first side and the circuit elements constituting the signal conversion unit are easily affected by static electricity.

  According to this application example, since at least one of the first protection region and the second protection region is formed along the first side, at least one of the light receiving element and the circuit element constituting the signal conversion unit is effective. Can be protected from static electricity.

1 is an external perspective view showing a multifunction machine according to an embodiment. It is the perspective view which showed the internal structure of the scanner unit. It is a disassembled perspective view which shows the structure of an image sensor typically. It is a top view which shows typically arrangement | positioning of an image reading chip | tip. It is a top view which shows typically the outline | summary of the layout structure of an image reading chip | tip. FIG. 3 is an enlarged plan view schematically showing the vicinity of an adjacent portion of the image reading chip in the first embodiment. It is sectional drawing in the AA of FIG. It is a schematic diagram for demonstrating the reason the protection with respect to static electricity is needed. FIG. 10 is an enlarged plan view schematically showing the vicinity of an adjacent portion of an image reading chip 415 in a second embodiment. It is sectional drawing which shows typically the image reading chip | tip 415 in 3rd Embodiment.

DESCRIPTION OF EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. The drawings used are for convenience of explanation. The embodiments described below do not unduly limit the contents of the present invention described in the claims. Also, not all of the configurations described below are essential constituent requirements of the present invention.

1. First Embodiment A multi-function device (multi-function device) 1 to which an image reading device of the present invention is applied will be described below with reference to the accompanying drawings. FIG. 1 is an external perspective view showing the multifunction device 1. As shown in FIG. 1, the multifunction machine 1 includes a printer unit (image recording apparatus: first apparatus) 2 that is an apparatus main body, and a scanner unit (image reading apparatus) that is an upper unit disposed on the printer unit 2. : A second device) 3. In the following description, it is assumed that the front-rear direction in FIG. 1 is the X-axis direction and the left-right direction is the Y-axis direction.

  As shown in FIG. 1, the printer unit 2 is disposed above a feeding path (not shown) that feeds a sheet recording medium (printing paper or cut sheet) along a feeding path, An apparatus frame (not shown) on which a printing unit (not shown) that performs printing processing on a recording medium by an inkjet method, a panel-type operation unit 63 disposed on the front surface, and a transport unit, a printing unit, and an operation unit 63 are mounted. And a device housing 65 covering these. The apparatus housing 65 is provided with a discharge port 66 through which the recording medium after printing is discharged. Although not shown, a USB port and a power supply port are provided at the bottom of the rear surface. That is, the multifunction device 1 is configured to be connectable to a computer or the like via a USB port.

  The scanner unit 3 is rotatably supported by the printer unit 2 via a hinge 4 at the rear end portion, and covers the upper part of the printer unit 2 so as to be freely opened and closed. That is, by pulling up the scanner unit 3 in the rotation direction, the upper surface opening of the printer unit 2 is exposed, and the inside of the printer unit 2 is exposed through the upper surface opening. On the other hand, the scanner unit 3 is pulled down in the rotation direction and placed on the printer unit 2, so that the scanner unit 3 closes the upper surface opening. As described above, by opening the scanner unit 3, it is possible to replace the ink cartridge, clear a paper jam, and the like.

  FIG. 2 is a perspective view showing the internal structure of the scanner unit 3. As shown in FIGS. 1 and 2, the scanner unit 3 is rotatably supported on an upper frame 11 that is a housing, an image reading unit 12 housed in the upper frame 11, and an upper portion of the upper frame 11. And an upper lid 13. As shown in FIG. 2, the upper frame 11 includes a box-shaped lower case 16 that houses the image reading unit 12, and an upper case 17 that covers the top surface of the lower case 16. In the upper case 17, a glass document placing plate (document table; not shown) is widely arranged, and a medium to be read (document) with a reading surface facing down is placed thereon. On the other hand, the lower case 16 is formed in a shallow box shape with the upper surface opened.

  As shown in FIG. 2, the image reading unit 12 includes a line sensor type sensor unit 31, a sensor carriage 32 on which the sensor unit 31 is mounted, and extends in the Y-axis direction, and supports the sensor carriage 32 in a slidable manner. And a self-propelled sensor moving mechanism 34 that moves the sensor carriage 32 along the guide shaft 33. The sensor unit 31 includes an image sensor (sensor unit) 41 that is a complementary metal-oxide-semiconductor (CMOS) line sensor extending in the X-axis direction, and is moved along the guide shaft 33 by a motor-driven sensor moving mechanism 34. Reciprocate in the Y-axis direction. As a result, the image of the medium to be read (original) on the original placement plate is read. The sensor unit 31 may be a CCD (Charge Coupled Device) line sensor.

  FIG. 3 is an exploded perspective view schematically showing the configuration of the image sensor 41. In the example shown in FIG. 3, the image sensor 41 includes a case 411, a light source 412, a lens 413, a module substrate 414, and an image reading chip 415 (semiconductor device) for reading an image. The light source 412, the lens 413, and the image reading chip 415 are accommodated between the case 411 and the module substrate 414. The case 411 is provided with a slit. Light emitted from the light source 412 is applied to the read medium through the slit, and reflected light from the read medium is input to the lens 413 through the slit. The lens 413 guides the input light to the image reading chip 415.

  FIG. 4 is a plan view schematically showing the arrangement of the image reading chip 415. As shown in FIG. 4, a plurality of image reading chips 415 are arranged on the module substrate 414 in a one-dimensional direction (X-axis direction in FIG. 4). Thereby, the scanner unit 3 (image reading apparatus) capable of reading a large image can be realized.

  FIG. 5 is a plan view schematically showing an outline of the layout configuration of the image reading chip 415. In the example illustrated in FIG. 5, the image reading chip 415 includes, on a semiconductor substrate 4150, a plurality of light receiving elements 416 that receive light from an image and perform photoelectric conversion, and an image from a signal generated by photoelectric conversion by the light receiving element 416. And a signal conversion unit 417 that generates an image reading signal that is a signal corresponding to the signal. The image reading signal may be an analog signal or a digital data signal. The signal conversion unit 417 may serially output an image reading signal based on the signal from each light receiving element 416.

  As shown in FIG. 5, the image reading chip 415 includes a plurality of light receiving elements 416 positioned side by side in a one-dimensional direction (X-axis direction in FIG. 5). Thereby, the scanner unit 3 (image reading apparatus) capable of reading a large image can be realized.

  As shown in FIG. 5, the semiconductor substrate 4150 has a shape including a first side 4151 and a second side 4152 longer than the first side 4151. In the example shown in FIG. 5, the direction along the Y axis is the first side 4151, and the direction along the X axis orthogonal to the Y axis is the second side 4152.

  FIG. 6 is an enlarged plan view schematically showing the vicinity of the adjacent portion of the image reading chip 415 in the first embodiment. 7 is a cross-sectional view taken along line AA in FIG. In FIG. 7, the signal conversion unit 417 is omitted.

  As shown in FIGS. 6 and 7, the semiconductor substrate 4150 is an N-type semiconductor substrate, and a P-well 500 (P-type well) is formed. The light receiving element 416 is formed in the P well 500. The signal conversion unit 417 is formed outside the P well 500. The signal conversion unit 417 may include a P well other than the P well 500.

  As shown in FIGS. 6 and 7, the image reading chip 415 is formed in the P well 500 of the semiconductor substrate 4150, and includes a first protection region 501 that electrostatically protects the light receiving element 416 and a P of the semiconductor substrate 4150. And a second protection region 502 formed outside the well 500 and electrostatically protecting the signal conversion unit 417. The first protection region 501 is provided along one side (first side 4151) facing the adjacent image reading chip 415 in the one-dimensional direction (X-axis direction). In the example shown in FIG. 6, the first protection region 501 exists but the second protection region 502 does not exist between the light receiving element 416 at the end in the X-axis direction and the end of the image reading chip 415. It is configured as follows. In the example shown in FIG. 6, the first protection area 501 and the second protection area 502 are not only on the end portion along the first side 4151 of the image reading chip 415 but also on the second side 4152 of the image reading chip 415. It is also provided at the end along.

  FIG. 8 is a schematic diagram for explaining the reason why protection against static electricity is necessary. The image reading chip 415 is affixed with a resin tape 600 for protecting the surface of the image reading chip 415 or is attached to the tape 600 in a manufacturing process from formation on the wafer to mounting on the module substrate 414. The process of peeling off is included. When the tape 600 is peeled off, the surface of the image reading chip 415 tends to be positively charged, and the tape 600 tends to be negatively charged. Therefore, when the tape 600 is peeled off, a current due to static electricity flows at the end of the image reading chip 415 where the tape 600 is finally separated, and the light receiving element 416 and the circuit elements constituting the signal converting unit 417 can be damaged. There is sex.

  According to the present embodiment, in the manufacturing process, the first protection region 501 can be provided at the end of the image reading chip 415 that is likely to generate static electricity when the tape 600 is attached / detached. Can protect. Further, since the first protection region 501 is formed in the same P well 500 as the light receiving element 416, the light receiving element 416 on the end side of the image reading chip 415 is compared with the case where a protection region is provided outside the P well 500. To the edge of the image reading chip 415 can be reduced. This can reduce image quality degradation. Therefore, it is possible to realize an image reading apparatus (scanner unit 3) that can reduce image quality deterioration while protecting against static electricity. Further, by including the second protection region 502, the signal conversion unit 417 can be protected from static electricity.

  As shown in FIG. 6, at least one of the first protection region 501 and the second protection region 502 may be formed along the first side 4151. In the example shown in FIG. 6, the first protection region 501 and the second protection region 502 are formed along the first side 4151.

  When the tape 600 is peeled off in the manufacturing process shown in FIG. 8, the tape 600 is generally peeled off in a direction along the second side 4152 which is a side longer than the first side 4151. In such a case, since the tape 600 is peeled off last on the first side 4151 side, the light receiving element 416 on the first side 4151 side and the circuit elements constituting the signal conversion unit 417 are affected by static electricity. Cheap.

  According to the present embodiment, since at least one of the first protection region 501 and the second protection region 502 is formed along the first side 4151, the circuit elements constituting the light receiving element 416 and the signal conversion unit 417. An image reading device (scanner unit 3) and a semiconductor device (image reading chip 415) that can effectively protect at least one of these from static electricity can be realized.

  In the present embodiment, the first protection region 501 may be formed of a P-type diffusion region, and the second protection region 502 may be formed of an N-type diffusion region. The first protective region 501 and the second protective region 502 are preferably configured to have higher conductivity than the surroundings by increasing the impurity concentration.

  According to the present embodiment, an image reading device (scanner unit 3) and a semiconductor device (image reading chip 415) that can effectively protect circuit elements constituting the light receiving element 416 and the signal conversion unit 417 from static electricity with a simple configuration. realizable.

2. Second Embodiment FIG. 9 is an enlarged plan view schematically showing the vicinity of an adjacent portion of an image reading chip 415 in a second embodiment. In addition, the same code | symbol is attached | subjected to the structure similar to 1st Embodiment, and detailed description is abbreviate | omitted.

  In the example shown in FIG. 9, the second protection region 502 is provided only at the end portion along the first side 4151 of the image reading chip 415, and is provided at the end portion along the second side 4152 of the image reading chip 415. Not.

  As described above, when the tape 600 is peeled off in the manufacturing process shown in FIG. 8, the tape 600 is generally peeled off in the direction along the second side 4152 that is longer than the first side 4151. In such a case, since the tape 600 is peeled off last on the first side 4151 side, the circuit elements constituting the signal conversion unit 417 on the first side 4151 side are easily affected by static electricity.

  Also in this embodiment, since the second protection region 502 is provided at the end along the first side 4151 of the image reading chip 415, the circuit elements constituting the signal conversion unit 417 can be effectively protected from static electricity. .

  Also in this embodiment, the same effect is produced for the same reason as in the first embodiment.

3. Third Embodiment FIG. 10 is a cross-sectional view schematically showing an image reading chip 415 in a third embodiment. FIG. 10 is a diagram corresponding to FIG. 7 in the first embodiment. In addition, the same code | symbol is attached | subjected to the structure similar to 1st Embodiment, and detailed description is abbreviate | omitted.

  In the present embodiment, at least one of the first protection region 501 and the second protection region 502 may be electrically connected to the metal wiring. In the example shown in FIG. 10, the first protection region 501 is electrically connected to the metal wiring 503 through the contact hole 505. The second protection region 502 is electrically connected to the metal wiring 504 through the contact hole 506. The metal wiring 503 and the metal wiring 504 may be further electrically connected to an electrostatic protection element (not shown). By providing the metal wiring 503 and the metal wiring 504, the resistance values of the first protection region 501 and the second protection region 502 can be lowered, so that static electricity can be more easily released.

  According to the present embodiment, the circuit elements that constitute the light receiving element 416 and the signal conversion unit 417 are more effective than the case where the first protection region 501 and the second protection region 502 are configured only by the diffusion region. An image reading device (scanner unit 3) and a semiconductor device (image reading chip 415) that can be protected from static electricity can be realized.

  As mentioned above, although this embodiment or the modification was demonstrated, this invention is not limited to these this embodiment or a modification, It is possible to implement in a various aspect in the range which does not deviate from the summary.

  The present invention includes configurations that are substantially the same as the configurations described in the embodiments (for example, configurations that have the same functions, methods, and results, or configurations that have the same objects and effects). In addition, the invention includes a configuration in which a non-essential part of the configuration described in the embodiment is replaced. In addition, the present invention includes a configuration that achieves the same effect as the configuration described in the embodiment or a configuration that can achieve the same object. In addition, the invention includes a configuration in which a known technique is added to the configuration described in the embodiment.

DESCRIPTION OF SYMBOLS 1 ... MFP, 2 ... Printer unit, 3 ... Scanner unit, 4 ... Hinge part, 11 ... Upper frame, 12 ... Image reading part, 13 ... Upper lid, 16 ... Lower case, 17 ... Upper case, 31 ... Sensor unit, 32 ... sensor carriage, 33 ... guide shaft, 34 ... sensor moving mechanism, 41 ... image sensor, 63 ... operating unit, 65 ... device housing, 66 ... discharge port, 411 ... case, 412 ... light source, 413 ... lens, 414 ... Module board, 415
... image reading chip, 416 ... light receiving element, 417 ... signal conversion unit, 500 ... P well, 501 ... first protection area, 502 ... second protection area, 503, 504 ... metal wiring, 505, 506 ... contact hole, 600 ... Tape, 4150 ... Semiconductor substrate, 4151 ... First side, 4152 ... Second side

Claims (6)

An image reading apparatus configured by arranging a plurality of image reading chips for reading an image in a one-dimensional direction,
The image reading chip is
A semiconductor substrate;
A light receiving element that is formed in a P well of the semiconductor substrate and photoelectrically converts light from the image;
A signal conversion unit that is formed outside the P well of the semiconductor substrate and generates an image reading signal that is a signal corresponding to the image from a signal generated by photoelectric conversion by the light receiving element;
A first protection region formed in the P well of the semiconductor substrate and electrostatically protecting the light receiving element;
A second protection region formed outside the P well of the semiconductor substrate and electrostatically protecting the signal conversion unit;
With
The image reading apparatus, wherein the first protection region is provided along one side facing the adjacent image reading chip in the one-dimensional direction. The image reading apparatus according to claim 1,
The image reading chip, wherein the image reading chip has a plurality of the light receiving elements located side by side in the one-dimensional direction. The image reading apparatus according to claim 1, wherein:
The semiconductor substrate has a shape including a first side and a second side longer than the first side,
At least one of the first protection area and the second protection area is an image reading device formed along the first side. The image reading apparatus according to any one of claims 1 to 3,
The first protection region is formed of a P-type diffusion region,
The image reading apparatus, wherein the second protection area is formed of an N-type diffusion area. The image reading apparatus according to claim 4,
An image reading apparatus, wherein at least one of the first protection area and the second protection area is electrically connected to a metal wiring. A semiconductor device for reading an image,
A semiconductor substrate;
A light receiving element that is formed in a P well of the semiconductor substrate and photoelectrically converts light from the image;
A signal conversion unit that is formed outside the P well of the semiconductor substrate and generates an image reading signal that is a signal corresponding to the image from a signal generated by photoelectric conversion by the light receiving element;
A first protection region formed in the P well of the semiconductor substrate and electrostatically protecting the light receiving element;
A second protection region formed outside the P well of the semiconductor substrate and electrostatically protecting the signal conversion unit;
With
The semiconductor substrate has a shape including a first side and a second side longer than the first side,
At least one of the first protection region and the second protection region is a semiconductor device formed along the first side.