JP6558529B2 - Spatial light modulator and method of using the same, modulation method, exposure method and apparatus, and device manufacturing method - Google Patents

Description

  Spatial light modulator having a plurality of movable optical elements and method of using the same, method of modulating light using the spatial light modulator, exposure technology for exposing an object using the spatial light modulator, and device manufacturing method using the exposure technology About.

  For example, in a lithography process for manufacturing a device (electronic device or micro device) such as a semiconductor element, an exposure apparatus is used to expose a mask pattern onto a photosensitive substrate via a projection optical system. Recently, in order to suppress the increase in manufacturing cost by preparing a mask for each of a plurality of types of devices and each of a plurality of layers of a substrate, and to efficiently manufacture each device, A so-called maskless exposure apparatus that generates a variable pattern on the object plane of a projection optical system using a spatial light modulator having an array of micromirrors with variable tilt angles. Proposed.

  When using a conventional spatial light modulator having a large array of micromirrors, light that is reflected by a structure such as a substrate after being incident on a gap between adjacent micromirrors is emitted from the micromirror itself. May change the state of the reflected light.

US Pat. No. 5,330,878

  According to the first aspect, the spatial light modulator includes a plurality of movable optical elements arranged in a predetermined plane on which light is incident, and modulates and emits the incident light, the plurality of movable optics. Among the elements, a conversion member is provided that makes the state of light incident on a gap between two adjacent movable optical elements and emitted from the gap different from the state of light emitted from the movable optical element. A spatial light modulator is provided.

  According to the second aspect, the spatial light modulator includes a plurality of movable optical elements arranged in a predetermined plane on which light is incident, and modulates and emits the incident light, the incident on the predetermined plane A light transmitting member provided on a side of the plurality of movable optical elements, and the light transmitting member indicates a state of light toward a gap region between two movable optical elements adjacent to each other. A spatial light modulator is provided that includes a conversion member that is different from a state of light emitted from the light source.

  According to the third aspect, in the exposure apparatus that exposes the substrate with exposure light, the spatial light modulator of the first aspect or the second aspect and the plurality of movable optical elements of the spatial light modulator are exposed. In order to control an illumination optical system for irradiating light, a projection optical system for projecting a pattern onto the substrate by guiding light from the plurality of movable optical elements to the substrate, and a pattern exposed on the substrate, An exposure apparatus is provided that includes a control device that individually controls a plurality of movable optical elements of the spatial light modulator.

According to the fourth aspect, irradiating the array of the plurality of movable optical elements of the spatial light modulator of the first aspect or the second aspect with light, and the light that has passed through the plurality of movable optical elements Individually controlling the plurality of movable optical elements to modulate, a method of using a spatial light modulator is provided.
According to the fifth aspect, in the exposure method for exposing the substrate with exposure light, the exposure light is irradiated to the array of the plurality of movable optical elements of the spatial light modulator of the first aspect or the second aspect. Exposing the substrate with light from the plurality of movable optical elements via a projection optical system and controlling the pattern exposed to the substrate to the plurality of optical elements of the spatial light modulator And separately controlling the exposure method.

  According to the sixth aspect, in the modulation method for modulating and emitting the incident light, irradiating the plurality of movable optical elements arranged in a predetermined plane with the incident light, and using the plurality of movable optical elements Modulating the incident light, and among the plurality of movable optical elements, a state of light incident on a gap between two movable optical elements adjacent to each other and emitted from the gap, A modulation method is provided that is different from the state of light emitted from the movable optical element.

According to a seventh aspect, in the modulation method for modulating and emitting the incident light, irradiating the plurality of movable optical elements arranged in a predetermined plane with the incident light, and using the plurality of movable optical elements Light that is emitted from the movable optical element in a state of light traveling toward a gap between two movable optical elements adjacent to each other among the plurality of movable optical elements. A modulation method for differentiating the state is provided.
In the above-described aspect of the invention, an example of the light state is the polarization state of the light.

According to the eighth aspect, in the exposure method for exposing the substrate with exposure light, the exposure light is modulated using the modulation method of the sixth aspect or the seventh aspect, and the modulated light is used. An exposure method is provided that includes exposing the substrate via a projection optical system and individually controlling the plurality of movable optical elements to control a pattern exposed to the substrate.
According to the ninth aspect, the pattern of the photosensitive layer is formed on the substrate using the exposure apparatus of the third aspect or the exposure method of the fifth aspect or the eighth aspect, and the pattern is formed. Treating the substrate, and providing a device manufacturing method.

It is a figure which shows schematic structure of the exposure apparatus of an example of embodiment. (A) is an enlarged perspective view showing a part of the SLM 28 in FIG. 1, and (B) is an enlarged perspective view showing one mirror element in FIG. 2 (A). (A) is an enlarged sectional view showing two adjacent mirror elements, and (B) is an enlarged plan view showing the two mirror elements. It is a figure which shows the relationship between the moving amount | distance of the up-down direction of a mirror element, and a reflectance. (A) is a partial enlarged plan view showing an example of a phase distribution of reflected light set by the spatial light modulator, and (B) shows an amplitude distribution of reflected light on a straight line along the Y axis in FIG. 5 (A). FIG. 4C is a diagram showing an intensity distribution of an image formed by light having the amplitude distribution. FIG. 6A is a plan view showing a phase distribution of reflected light set by the spatial light modulator of the comparative example, and FIG. 6B is a diagram showing an amplitude distribution of reflected light on a straight line along the Y axis in FIG. (C) is a figure which shows intensity distribution of the image formed with the light of the amplitude distribution. It is a flowchart which shows an example of the exposure method. (A) is a view showing a shot area of a wafer at the time of scanning exposure, and (B) is a view showing a shot area of the wafer at the time of exposure by the step-and-repeat method. It is an expanded sectional view which shows two adjacent mirror elements of a modification. It is a figure which shows schematic structure of the exposure apparatus of other embodiment. It is a flowchart which shows an example of the manufacturing process of an electronic device.

Hereinafter, an exemplary embodiment will be described with reference to FIGS. 1 to 8B.
FIG. 1 shows a schematic configuration of a maskless exposure apparatus EX using a spatial light modulator (SLM) according to the present embodiment. In FIG. 1, an exposure apparatus EX includes an exposure light source 2 that emits pulsed light, an illumination optical system ILS that illuminates a surface to be irradiated with exposure illumination light (exposure light) IL from the light source 2, and substantially Spatial light modulator 28 including a number of mirror elements 30 which are micromirrors (movable reflective elements) each having a variable height arranged as a two-dimensional array on the irradiation surface or a surface in the vicinity thereof. And a modulation control unit 48 for driving the spatial light modulator 28 (hereinafter referred to as SLM 28). Further, the exposure apparatus EX receives the illumination light IL reflected by the reflective uneven pattern (reflective mask pattern having a phase distribution) generated by a large number of mirror elements 30, and the uneven pattern (phase distribution). A projection optical system PL for projecting a spatial image (device pattern image) formed corresponding to the above to the surface of a semiconductor wafer (hereinafter simply referred to as a wafer) W as a photosensitive substrate, and positioning and movement of the wafer W It includes a wafer stage WST, a main control system 40 composed of a computer that controls the overall operation of the apparatus, and various control systems.

  Hereinafter, in FIG. 1, a Z-axis is set perpendicular to the bottom surface of wafer stage WST (a surface parallel to a guide surface not shown), and Y-axis is set in a direction parallel to the plane of FIG. 1 in a plane perpendicular to the Z-axis. Will be described with the X axis set in the direction perpendicular to the paper surface of FIG. In addition, angles around axes parallel to the X axis, Y axis, and Z axis are also referred to as angles in the θx direction, θy direction, and θz direction, respectively. In this embodiment, the wafer W is scanned or moved in the Y direction (scanning direction) during exposure.

  As the light source 2, an ArF excimer laser light source is used that emits a pulse of substantially linearly polarized laser light having a wavelength of 193 nm and a pulse width of about 50 ns at a frequency of about 4 to 6 kHz. As the light source 2, a KrF excimer laser light source having a wavelength of 248 nm, a pulsed light emitting diode, or a solid pulse laser light source that generates harmonics of laser light output from a YAG laser or a solid state laser (semiconductor laser, etc.) Can be used. The solid-state pulse laser light source can emit laser light with a wavelength of 193 nm (various wavelengths other than this) and a pulse width of about 1 ns at a frequency of about 1 to 2 MHz.

In the present embodiment, a power source unit 42 is connected to the light source 2. The main control system 40 supplies a light emission trigger pulse TP instructing the pulse emission timing and the light amount (pulse energy) to the power supply unit 42. In synchronization with the light emission trigger pulse TP, the power supply unit 42 causes the light source 2 to emit pulses at the instructed timing and light quantity.
Illumination light IL made up of pulse laser light having a rectangular cross-section emitted from the light source 2 and a substantially parallel light beam is incident on the illumination optical system ILS. As an example, the illumination optical system ILS of the present embodiment includes a spatial light modulator 10 (hereinafter, referred to as an array of a plurality of minute mirror elements 10a (movable reflective elements) having variable inclination angles around two orthogonal axes. SLM10). In the illumination optical system ILS, the illumination light IL is transmitted through a beam expander 4 composed of a pair of lenses, a polarization control optical system 6 having a half-wave plate or the like that controls the polarization state of the illumination light IL, and a mirror 8A. Illuminates the reflective surfaces of a number of mirror elements 10a of the SLM 10. The illumination light IL reflected by the SLM 10 enters the microlens array 16 via the relay optical system 14 including the lenses 14a and 14b and the mirror 8B. The illumination light IL incident on the microlens array 16 is two-dimensionally divided by a large number of minute lens elements constituting the microlens array 16, and the pupil plane of the illumination optical system ILS that is the rear focal plane of each lens element. A secondary light source (surface light source) is formed in the IPP (hereinafter referred to as an illumination pupil plane).

Note that a diffractive optical element may be used instead of the spatial light modulator 10.
As the polarization control optical system 6, for example, a polarization control optical system disclosed in US Pat. No. 7,423,731 may be applied. As polarization control systems, US Publication Nos. 2006/0170901, 2007/0146676, 2007/0195305, 2010/0165318, 2014/0211174, and 2014/0233008. You may use the polarization control system disclosed by the gazette.

  By controlling the distribution of the tilt angles around the two axes of the multiple mirror elements 10a of the SLM 10, the light intensity distribution (pupil luminance distribution) on the illumination pupil plane IPP is changed to normal illumination, annular illumination, multipolar illumination, or It can be set to an arbitrary distribution for illumination or the like optimized for the reticle pattern. The distribution of the tilt angles of the many mirror elements 10a of the SLM 10 according to the illumination conditions is controlled by the modulation control unit 49. Note that a spatial light modulator having an array of a large number of mirror elements each having a variable height, or a plurality of diffractive optical elements can be used instead of the SLM 10 having a variable tilt angle. Further, a fly-eye lens or the like may be used instead of the microlens array 16.

  Illumination light IL from the secondary light source formed on the illumination pupil plane IPP includes a first relay lens 18, a field stop 20, a mirror 8C that bends the optical path in the -Z direction, a second relay lens 22, a condenser optical system 24, and The light is incident on the irradiated surface (the surface on which the designed transfer pattern is arranged) parallel to the XY plane through the mirror 8D at an average incident angle α in the θx direction. In other words, the optical axis AXI of the illumination optical system ILS intersects the irradiated surface in the θx direction at an incident angle α. The incident angle α is, for example, several degrees (deg) to several tens of degrees. On the irradiated surface or a surface in the vicinity thereof, a reflection surface at the time of power-off of a large number of mirror elements 30 arranged in a two-dimensional array of SLMs 28 is arranged. An illumination optical system ILS is configured including optical members from the beam expander 4 to the condenser optical system 24 and the mirror 8D. Illumination light IL from the illumination optical system ILS illuminates a rectangular illumination area 26A elongated in the X direction on the array of a large number of mirror elements 30 of the SLM 28 with a substantially uniform illumination distribution. A large number of mirror elements 30 are arranged in a rectangular region including the illumination region 26A at a predetermined pitch in the X direction and the Y direction. The illumination optical systems ILS and SLM 28 are supported by a frame (not shown).

  2A is an enlarged perspective view showing a part of the reflecting surface of the SLM 28 in FIG. 1, and FIG. 2B is an enlarged perspective view showing one mirror element 30 in FIG. 2A. 2A, the SLM 28 includes a flat base member 32 and a plurality of mirror elements 30 arranged on the upper surface of the base member 32 at pitches (periods) px and py in the X direction and the Y direction, respectively. ing. The mirror element 30 has a rectangular reflecting portion 31 having a width ax (<px) in the X direction and a width ay (<py) in the Y direction, and the upper surface of the reflecting portion 31 is a flat reflection that reflects incident light. It is the surface 31a. Regions between two reflecting portions 31 adjacent to each other in the X direction and the Y direction are gap regions 34X and 34Y, respectively. Regarding the width gx in the X direction of the gap region 34X (hereinafter also referred to as the interval in the X direction of the reflecting portion 31) and the width gy in the Y direction of the gap region 34Y (hereinafter also referred to as the interval in the Y direction of the reflecting portion 31) The relationship is established.

px = ax + gx (1A), py = by + gy (1B)
It can also be said that the intervals gx and gy of the reflecting portion 31 are intervals in the arrangement direction of two adjacent mirror elements 30. Further, when the gap regions 34X and 34Y are regarded as slits between two adjacent mirror elements 30 (reflecting portions 31), the intervals gx and gy can also be referred to as slit widths, respectively. As an example, the reflection part 31 is square, width ax and ay are mutually equal, and pitch px and py are also mutually equal. In this case, the distances gx and gy of the reflection part 31 are also equal to each other. The reflecting portion 31 may be a polygon such as a rectangle or a hexagon, and the pitches px and py may be different from each other. Further, the intervals gx and gy may be different from each other. Note that the intervals gx and gy of the reflecting portions 31 can also be said to be intervals in the arrangement direction of the reflecting surfaces 31a of the two adjacent mirror elements 30, respectively. In addition, adjacent sides of two adjacent mirror elements 30 (reflecting portions 31) (sides on the gap area side of two mirror elements arranged with the gap area interposed therebetween) may be parallel to each other. .

  On the reflecting surface of the SLM 28, mirrors are provided at positions P (i, j) at the i-th (i = 1, 2,..., I) in the X direction and j-th (j = 1, 2,..., J) in the Y direction. The reflection part 31 of the element 30 is arrange | positioned (I and J are each an integer greater than or equal to 2). As an example, the number J of arrangements in the Y direction (direction corresponding to the scanning direction of the wafer W) of the mirror elements 30 is several hundred to several thousand, and the number I of arrangements in the X direction is several times to several tens of times the number J of arrangements. It is. Further, the pitch px (= py) of the arrangement of the mirror elements 30 may be, for example, about 10 μm to 0.5 μm.

  The mirror element 30 has a rectangular flat plate-like connecting portion 33 smaller than the reflecting portion 31 connected to the bottom surface of the reflecting portion 31 via a thin shaft portion 31b (see FIG. 3A), and a base member 32. A plurality of flexible hinge portions 35A and 35B (see FIG. 2B) for supporting the connecting portion 33 so as to be displaceable in the Z direction, and a thin, substantially square formed on the surface of the base member 32 Electrode 36A, and a thin, substantially square electrode 36B (see FIG. 3A) formed on the bottom surface of the connecting portion 33 so as to face the electrode 36A. As an example, the mirror element 30 includes two hinge portions 35A and 35B. However, for example, two hinge portions (not shown) may be provided in an arrangement in which the hinge portions 35A and 35B are rotated by 90 degrees.

  3A is an enlarged cross-sectional view showing the mirror element 30 at positions P (i, j-1) and P (i, j) in FIG. 2A, and FIG. 3B is FIG. ). In FIG. 3A, the base member 32 includes, for example, a flat substrate 32A made of, for example, silicon (Si), and an insulating layer 32B such as silicon nitride (eg, Si3N4) formed on the surface of the substrate 32A. It consists of and. Further, as an example, the reflecting portion 31 and the shaft portion 31b are formed from a material having high reflectivity such as aluminum, and the connecting portion 33 is formed from a material having high conductivity such as an alloy of titanium and aluminum (TiAl). The portions 35A and 35B are made of a highly conductive material such as an alloy of titanium and aluminum, or aluminum, and have a small cross-sectional area and an elongated shape so as to have flexibility. The gap gcy in the Y direction and the gap gcx in the X direction of the coupling part 33 are set wider than the gaps gx and gy of the reflection part 31, respectively. As an example, the interval gcy and the interval gcx are set equal.

  The electrodes 36A and 36B are made of a highly conductive material such as an alloy of titanium and aluminum or copper (Cu). Since the connecting portion 33 has high conductivity, the electrode 36B on the bottom surface of the connecting portion 33 can be omitted. In addition, the reflecting portion 31 may be formed by forming a reflective film made of a highly reflective material (for example, aluminum) on the surface of a flat plate member made of, for example, polysilicon.

  A signal line (not shown) for applying a predetermined voltage between the electrodes 36A and 36B corresponding to each mirror element 30 is provided in a matrix on the surface of the base member 32, and the hinge portions 35A and 35B are Are connected to signal lines (not shown) corresponding to the electrodes 36B. With this configuration, for each mirror element 30, a predetermined variable voltage is applied between the electrode 36 </ b> A and the electrode 36 </ b> B (or the connection portion 33), and the connection portion 33 (and the reflection portion 31) is used as the base member 32 method. It can be driven in the linear direction (Z direction).

  As an example, in a state where the voltage is not applied between the electrodes 36A and 36B in the power-off state or the power-on state (first state), as shown by the mirror element 30 at the position P (i, j−1), The reflecting surface of the mirror element 30 coincides with a reference plane A1 that is a plane parallel to the XY plane. On the other hand, when a predetermined voltage is applied between the electrodes 36A and 36B when the power is turned on (second state), as shown by the mirror element 30 at the position P (i, j), the reflection of the mirror element 30 is performed. The plane coincides with a plane A2 that is parallel to the XY plane and displaced from the reference plane A1 by the interval δa in the Z direction. Thus, the position of the reflecting surface of the mirror element 30 can be changed along the traveling direction of the light incident on the mirror element. In other words, the position of the reflecting surface of the mirror element 30 can be changed along the direction of the optical axis AXW of the projection optical system. The modulation control unit 48 in FIG. 1 performs electrodes 36A and 36B for each mirror element 30 at the position P (i, j) according to information on the phase distribution (uneven pattern) of the illumination light IL set from the main control system 40. Control the voltage between. The reflectivity of each mirror element 30 is, for example, about 80% or more, and each mirror element 30 is set to either the first state or the second state.

  The SLM 28 having such a minute three-dimensional structure can be manufactured using, for example, a so-called MEMS (Microelectromechanical Systems) technique. Since each mirror element 30 of the SLM 28 only needs to be set to the first state or the second state by translation, it is easy to reduce the size of the mirror element 30 and increase the number of arrangement of the mirror elements 30.

  Hereinafter, the illumination light IL incident on the SLM 28 will be described as illumination light IL1, IL2, and IL3 depending on a region incident as necessary. When the reflection surface of each mirror element 30 matches the reference plane A1 (first state) and the amount of change in the phase of the illumination light IL1 reflected by the mirror element 30 is the first phase δ1, In the present embodiment, the phase δ1 is 0 degree (0 °). Further, the phase of the illumination light IL2 reflected by the mirror element 30 is changed in a state (second state) in which the reflecting surface of each mirror element 30 matches the plane A2 displaced from the reference plane A1 by the interval δa. If the amount is the second phase δ2, the phase δ2 is 180 degrees (π (rad)) different from the phase δ1. In this case, the following relationship is established. However, in consideration of a manufacturing error of the SLM 28, a driving error by the modulation control unit 48, and the like, the phase δ2 is allowed to have an error of several degrees (deg) with respect to the equation (2B). In the following, a phase without a unit means rad.

δ1 = 0 degrees (2A), δ2 = 180 degrees = π (2B)
Further, the surface of the portion of the base member 32 facing the gap areas 34Y and 34X between the mirror elements 30 is incident on the gap areas 34Y and 34X with a width that is, for example, several% to several tens% wider than the gap areas 34Y and 34X. Wave plates 37Y and 37X (polarization state conversion members) for converting the polarization state of the illumination light IL3 are fixed (see FIG. 3B). In FIG. 3A, the wave plate 37Y (the same applies to the wave plate 37X) is provided on the surface of the insulating layer 32B, which is the upper layer of the base member 32. A wave plate 37Y may be provided. The reflectance of the surface of the base member 32 or the electrode 36A is, for example, about several tens of percent.

  In the present embodiment, as an example, the illumination light IL incident on the mirror element 30 is linearly polarized light whose polarization direction is the X direction or the Y direction. In this case, the wave plates 37Y and 37X are quarter wave plates made of a birefringent optical material such as quartz, and the direction of the crystal axis is inclined 45 degrees with respect to the Y direction (or X direction). Is used. At this time, the wavelength plate 37Y acts as a half-wave plate for the illumination light IL3 that passes through the wavelength plate 37Y and is reflected by the surface of the base member 32. Similarly, the wavelength plate 37X also acts as a half-wave plate for the illumination light IL3 incident on the gap region 34X. For this reason, the polarization direction of the illumination light IL3 reflected by the surface of the base member 32 and passing through the wave plates 37X and 37Y and the gap regions 34X and 34Y and returning to the upper side of the mirror element 30 is the polarization of the incident illumination light IL3. Direction and a direction orthogonal to the polarization direction of the illumination lights IL1 and IL2 reflected by the reflecting portion 31, and the reflected illumination light IL3 is reflected by the reflected illumination lights IL1. It will not interfere with IL2. As a result, the influence of the reflected light IL3 that passes through the gap regions 34Y and 34X, is reflected by the surface of the base member 32, and returns to the upper side of the mirror element 30 is suppressed.

  Curves A1 and A2 in FIG. 4 show the two mirrors when the distance between the reflecting portion 31 and the base member 32 of two adjacent mirror elements 30 whose reflecting surfaces coincide with the reference plane A1 is changed. The reflectance of the reflected light from the element 30 (including the reflected light from the gap regions 34Y and 34X) is shown, and the horizontal axis in FIG. 4 is the distance between the reflecting portion 31 of the mirror element 30 and the base member 32. A solid curve A1 indicates the reflectance when the wave plates 37Y and 37X are provided, and a dotted curve A2 indicates the reflectivity when the wave plates 37Y and 37X are not provided. When the wave plates 37Y and 37X are provided (curve A1), since the reflected light from the gap regions 34Y and 34X does not interfere with the reflected light from the reflecting part 31, the reflecting part 31 and the base member 32 of the mirror element 30 Even if the distance changes, almost the same reflectance is obtained. Therefore, even when a manufacturing error occurs in the SLM 28, a target pattern (phase distribution) can be generated with high accuracy by the SLM 28.

  On the other hand, when the wave plates 37Y and 37X are not provided (curve A2), since the reflected light from the gap regions 34Y and 34X interferes with the reflected light from the reflecting portion 31, the distance gx between the reflecting portions 31 is particularly large. , Gy is wide, the amount of change in reflectivity increases when the distance between the reflecting portion 31 of the mirror element 30 and the base member 32 changes. For this reason, when a manufacturing error occurs in the SLM 28, when the pattern (phase distribution) is generated by the SLM 28, the difference from the target pattern may increase.

  In the present embodiment, since the wave plates 37Y and 37X are provided, the distances gx and gy of the reflecting portion 31 can be set to a size that is, for example, about the wavelength of the illumination light IL to about several tens of times that wavelength. it can. As a result, the reflecting portions 31 of the mirror elements 30 can be smoothly and independently driven, and a target pattern can be generated with high accuracy by the SLM 28. Furthermore, since the illumination light IL3 incident on the gap regions 34Y and 34X is reflected, heat generation of the base member 32 is suppressed.

  2A, each mirror element 30 of the SLM 28 changes the phase of the incident illumination light IL by changing the phase of the incident illumination light IL by 0 degrees, or changes the phase of the incident illumination light IL by 180 degrees (π). The second state of reflection is controlled. Hereinafter, the mirror element 30 set to the first state is also referred to as a phase 0 mirror element, and the mirror element 30 set to the second state is also referred to as a phase π mirror element.

As an example, the main control system 40 of FIG. 1 supplies information on the phase distribution (uneven pattern) of the illumination light IL set by the SLM 28 to the modulation control unit 48 every time the illumination light IL has a predetermined number of pulses. In response to this, the modulation control unit 48 controls each mirror element 30 of the SLM 28 to phase 0 or phase π. An aerial image corresponding to the phase distribution is formed on the surface of the wafer W.
In FIG. 1, the illumination light IL reflected by the array of a large number of mirror elements 30 in the illumination area 26A of the SLM 28 enters the projection optical system PL at an average incident angle α. The projection optical system PL having an optical axis AXW supported by a column (not shown) is a non-telecentric reduction projection optical system on the SLM 28 (object plane) side and telecentric on the wafer W (image plane) side. The projection optical system PL converts a reduced image of the aerial image corresponding to the phase distribution of the illumination light IL set by the SLM 28 into an exposure area 26B (an area optically conjugate with the illumination area 26A) in one shot area of the wafer W. ) To form. The projection magnification β of the projection optical system PL is, for example, about 1/10 to 1/100, and the resolution (half pitch or line width) is, for example, the width of the image of the pair of mirror elements 30 and the boundary portion 34 of the SLM 28 ( β · py). In other words, a structure smaller than the pitch py of one mirror element 30 is not resolved on the object plane of the projection optical system PL. For example, when the size of the mirror element 30 and the boundary portion 34 is about several μm square and the projection magnification β of the projection optical system PL is about 1/100, the resolution of the projection optical system PL is about several tens of nm.

The wafer W (substrate) includes, for example, a surface of a circular flat base material such as silicon or SOI (silicon on insulator) applied with a photoresist (photosensitive material) with a thickness of about several tens to 200 nm. .
By using the non-telecentric projection optical system PL on the object side as in the present embodiment, the reflection surfaces of the many mirror elements 30 of the SLM 28 and the exposure surface (photoresist surface) of the wafer W can be arranged substantially in parallel. . Therefore, it is easy to design and manufacture the exposure apparatus.

Further, when the exposure apparatus EX is of an immersion type, for example, as disclosed in US Patent Application Publication No. 2007/242247, a space between the optical member at the tip of the projection optical system PL and the wafer W is disclosed. A local liquid immersion device for supplying and recovering a liquid (for example, pure water) that transmits the illumination light IL is provided. In the case of the immersion type, the resolution can be further increased.
In FIG. 1, a wafer W is sucked and held on the upper surface of a wafer stage WST via a wafer holder (not shown), and the wafer stage WST performs step movement in the X direction and the Y direction on a guide surface (not shown). Move at a constant speed in the direction. The position of wafer stage WST in the X and Y directions, the rotation angle in the θz direction, and the like are formed by laser interferometer 45, and this measurement information is supplied to stage control system 44. Stage control system 44 controls the position and speed of wafer stage WST via drive system 46 such as a linear motor based on control information from main control system 40 and measurement information from laser interferometer 45. In order to perform alignment of the wafer W, an alignment system (not shown) for detecting the position of the alignment mark on the wafer W is also provided.

  When the wafer W is exposed, the illumination conditions of the illumination optical system ILS are set. Then, by illuminating the SLM 28 with the illumination optical system ILS and changing the phase distribution of the illumination light IL on the reflection surface of the SLM 28 under the control of the modulation control unit 48, the wafer W is scanned in the Y direction, for example, thereby the surface of the wafer W The pattern image generated by the SLM 28 is exposed. At this time, the modulation control unit 48 controls the SLM 28 so that the concavo-convex pattern formed by the plurality of reflecting surfaces of the SLM 28 is moved in synchronization with the movement of the wafer W. Note that the wafer W may be moved in synchronization with the movement of the concavo-convex pattern formed by the plurality of reflecting surfaces of the SLM 28.

  As another example, instead of the wave plate 37Y, incident illumination light IL3 is absorbed on the surface of the base member 32 at a portion facing the gap regions 34Y and 34X in FIG. An absorbing member 44Y that weakens (decreases) strength (amplitude) may be arranged. Here, reducing (decreasing) the intensity (amplitude) of the illumination light IL3 by the absorbing member 44Y means that the intensity (amplitude) of the illumination light IL3 incident on the absorbing member 44Y is incident on the absorbing member 44Y after entering the absorbing member 44Y. This means that the intensity (amplitude) of light emitted from 44Y is small. The absorbing member 44Y can be formed of, for example, chromium oxide having a low reflectance with respect to the illumination light IL3. Similarly, an absorbing member (not shown) may be arranged instead of the wave plate 37X. When the absorbing member 44Y is provided in this way, the amount of reflected light from the gap regions 34Y and 34X becomes almost zero, so that the target pattern can be generated with high accuracy by the SLM 28.

  Next, the influence of the reflected light of the illumination light IL in the gap regions 34Y and 34X of the SLM 28 in FIG. As an example, on the surface of the wafer W, as shown in FIG. 5C, a light intensity distribution INT having a pitch in the Y direction that is three times (β · 3py) (β is the projection magnification) of the pitch of the image of the mirror element 30. In other words, it is assumed that an aerial image having a line-and-space pattern (hereinafter referred to as an L & S pattern) having a pitch in the Y direction of β · 3py is formed. In this case, the illumination condition of the illumination optical system ILS of the exposure apparatus EX is, for example, a small σ illumination having a σ value of about 0.1 to 0.05, and the polarization direction of the illumination light IL is in the X direction on the wafer W. Set to The phase distribution of the array of mirror elements 30 of the SLM 28 includes a first distribution including four or more mirror elements 30 in the X direction and three mirror elements 30 in the Y direction, as shown in the enlarged plan view of FIG. Each mirror element 30 is in the first state (phase 0) in the region D1 and is adjacent to the first region D1 in the Y direction and includes four or more mirror elements 30 in the X direction and three mirror elements 30 in the Y direction. Each mirror element 30 is set to a distribution in the second state (phase π) in the second region D2. FIG. 5A and FIG. 6A described later are perspective views, and the mirror element 30 in the second state is hatched. The widths of the regions D1 and D2 in the Y direction are each 3 py.

  In the present embodiment, the absorbing member 44Y of FIG. 3A and the absorbing member for X direction (not shown) are arranged on the surface portion of the base member 32 facing the gap regions 34Y, 34X in the regions D1, D2. It shall be. In this case, the amount of illumination light IL incident on and reflected by the gap region 34 including the gap regions 34Y and 34X is substantially zero. Therefore, the amplitude distribution AM (distribution of relative value of amplitude) of the reflected light of the illumination light IL on a straight line parallel to the Y axis of the reflecting surface of the SLM 28 in FIG. 5A (a straight line that does not pass through the boundary region 34X in the X direction). ) Changes as shown in FIG. In addition, since the projection optical system PL does not resolve a structure smaller than the pitches py and px of the mirror element 30 on the object plane, a portion where there is almost no reflected light in the width gy in the Y direction inside the regions D1 and D2. The portion is not resolved by the projection optical system PL.

  Therefore, the amplitude distribution AM (normalized so that the range is ± 1) in FIG. 5B is substantially a portion having a width of 3 py in the Y direction and a phase of 0, and a width of 3 py in the Y direction. The distribution is such that the portion of the phase of π is repeated. Accordingly, the light intensity distribution INT in the Y direction of the image of the projection optical system PL corresponding to the amplitude distribution has a sine wave shape with a pitch of β · 3 py as shown in FIG. To obtain an L & S pattern having a pitch of β · 3 py.

  On the other hand, in the SLM 28V of the comparative example of FIG. 6A, the gap regions 34Y and 34X (gap region 34) between the mirror elements 30 are the same as the mirror element 30 in the first state (phase 0). The incident illumination light is reflected with an amplitude AMr in which the phase of the illumination light is changed by 0. Also in this comparative example, the states of the many mirror elements 30 are changed to the first state (phase 0) in the first region D1 in the same manner as in FIG. The distribution is set such that each mirror element 30 is in the second state (phase π) in the second region D2 adjacent to D1 in the Y direction.

  In this comparative example, the amplitude distribution AM of the reflected light of the illumination light IL on a straight line parallel to the Y axis in FIG. 6A (a straight line that does not pass through the boundary region 34X in the X direction) is shown in FIG. To change. In this comparative example, since the phase of the reflected light of the boundary region 34Y is 0, in FIG. 6B, the phase of the portion having the width in the Y direction (3py + gy) including the region D1 and one boundary region 34Y is almost the same. The phase of the portion with the width in the Y direction (3py-gy) excluding one boundary region 34Y from the region D2 is approximately π. Also in this case, the portion (two boundary regions 34Y) in which the phase is zero with the width gy in the Y direction inside the region D2 is a portion in which the phase is not substantially changed with respect to the projection optical system PL. .

  Therefore, in the amplitude distribution AM of FIG. 6B, a portion where the phase is substantially zero with a width in the Y direction (3py + gy) and a portion where the phase in the Y direction (3py−gy) and the phase is π are repeated. Distribution. Therefore, the light intensity distribution INT in the Y direction of the image of the projection optical system PL corresponding to the amplitude distribution AM is a sine wave whose pitch in the Y direction is β (3py + gy) and the Y direction as shown in FIG. And a sine wave having a pitch of β (3py-gy) are alternately distributed one cycle at a time. Therefore, it is difficult to obtain with high accuracy an L & S pattern in which the pitch in the Y direction finally becomes β · 3py uniformly. Similarly, similarly to the mirror element 30 in the second state, even when the phase of the illumination light IL incident on the boundary region 34 changes by π, the pitch in the Y direction is finally uniformly β · 3py. It is difficult to obtain an L & S pattern.

  On the other hand, according to the SLM 28 of the present embodiment, since the reflectance of the gap regions 34Y and 34X is extremely small, a target aerial image (and thus a device pattern) is formed on the surface of the wafer W via the projection optical system PL. It can be formed with high accuracy. Similarly, even when the wave plates 37Y and 37X are arranged on the surface of the base member 32 facing the gap regions 34Y and 34X, a target aerial image (device pattern) can be formed on the surface of the wafer W with high accuracy.

  Next, an example of an exposure method for exposing the wafer W using the SLM 28 will be described with reference to the flowchart of FIG. First, after the alignment of the wafer W, the illumination conditions of the illumination optical system ILS are set. Then, for example, the wafer W is positioned at the scanning start position in order to perform exposure on the shot areas SA21, SA22,... Arranged in a line in the Y direction on the surface of the wafer W shown in FIG. Thereafter, scanning of the wafer W at a constant speed in the + Y direction is started. Note that arrows in the shot area SA21 and the like in FIG. 8A indicate the relative movement direction of the exposure area 26B with respect to the wafer W.

  Next, the main control system 40 illuminates light on the reflecting surface of the SLM 28 corresponding to the aerial image formed in the exposure area 26B in the modulation control unit 48 according to the relative position of the exposure area 26B of the wafer W to the shot area SA21. Information on the phase distribution of IL is supplied (step 102 in FIG. 7), and a light emission trigger pulse TP is supplied to the power supply unit 42 (step 104). As a result, the target aerial image is sequentially exposed in the exposure area 26B according to the position in the Y direction (step 106). By repeating this operation until the shot area SA21 crosses the exposure area 26B, the entire aerial image (circuit pattern image) is exposed in the shot area SA21.

  Thereafter, in order to expose the shot area SA22 adjacent to the shot area SA21 of the wafer W, the main control system 40 sends the phase distribution information of the illumination light IL to the modulation controller 48 while scanning the wafer W in the same direction. While supplying, the light emission trigger pulse TP is supplied to the power supply part 42. FIG. In this way, continuous exposure can be performed from the shot areas SA21 to SA22. When exposure is continued (step 108), for example, when shifting to exposure of a row including shot areas SA31 and SA32 adjacent in the X direction of wafer W in FIG. 8A, wafer stage WST is driven. The wafer W is step-moved in the X direction (non-scanning direction orthogonal to the scanning direction) (step 110). Then, the scanning direction of the wafer W with respect to the exposure region 26B indicated by the dotted line is set to the opposite −Y direction, and information on the phase distribution of the illumination light IL is supplied from the main control system 40 to the modulation control unit 48 in the reverse order ( In step 102), the light emission trigger pulse TP is supplied to the power supply unit 42 (step 104), so that the exposure can be continuously performed from the shot area SA32 to SA31 (step 106). In this exposure, it is possible to expose different aerial images to the shot areas SA21, SA22 and the like. Thereafter, the photoresist on the wafer W is developed, so that a resist pattern is formed in each shot area of the wafer W.

According to the exposure method of the present embodiment, the reflectivity of the gap regions 34Y and 34X of the SLM 28 is low, and the phase distribution of the pattern to be exposed can be generated with high accuracy by the SLM 28. A desired pattern image can be exposed with high accuracy.
As described above, the exposure apparatus EX of the present embodiment includes the SLM 28. In addition, the SLM 28 includes a plurality of reflecting portions 31 (movable optical elements or reflecting elements) of the mirror elements 30 arranged along the reference plane A1 (predetermined plane), and modulates the phase of the incident illumination light IL to be emitted. In addition, as an example, among the plurality of reflecting portions 31, the light enters the gap regions 34Y and 34X between the two reflecting portions 31 adjacent in the Y direction (predetermined direction) of the reference plane A1, and the gap region 34Y. , 34X are provided with wave plates 37Y, 37X (conversion members) for making the polarization state of the illumination light IL3 emitted from the reflection unit 31 different from the polarization state of the illumination light IL1, IL2.

  Further, in the method using the SLM 28, the step 104 of irradiating the illumination light IL to the array of the reflection portions 31 of the plurality of mirror elements 30 of the SLM 28 and the illumination light IL that has passed through the plurality of reflection portions 31 are modulated (phase modulation). ), Step 102 for individually controlling the plurality of reflecting portions 31 is included. The modulation method of modulating and emitting the illumination light IL using the SLM 28 includes a step 104 of irradiating the illumination light IL to the reflecting portions 31 of the plurality of mirror elements 30 arranged along the reference plane A1, and a plurality of steps 104. The step of modulating the illumination light IL using the reflection portion 31 of the first and second portions, and the polarization state of the illumination light IL3 emitted from the gap regions 34Y and 34X of the two reflection portions 31 adjacent in the Y direction of the reference plane A1 The illumination lights IL1 and IL2 reflected from the reflecting portion 31 are different from the polarization state.

  In these, as an example, if the reflected illumination lights IL1 and IL2 are linearly polarized light whose polarization direction is the Y direction, the reflected illumination light IL3 is linearly polarized light whose polarization direction is the X direction. According to the present embodiment, in the SLM 28 having a plurality of movable reflecting portions 31, the reflected light from the gap regions 34Y and 34X between the reflecting portions 31 is a region including the plurality of reflecting portions 31 and the gap regions 34Y and 34X. Since the reflectance is hardly changed, the influence of the reflected light from the gap regions 34Y and 34X is suppressed. Therefore, the target pattern can be generated with high accuracy by the SLM 28.

In addition, even when the absorbing member 44Y and the like are arranged in a region facing the gap regions 34Y and 34X, the target pattern can be generated with high accuracy by the SLM 28 with the reflected light from the gap regions 34Y and 34X being almost zero.
Further, the mirror element 30 including the reflecting portion 31 of the SLM 28 changes the phase of the incident light by changing the phase of the incident light by the first phase (δ1), and the phase of the incident light is changed to the first state. It is possible to control to a plurality of states including a second state in which the phase is changed by a second phase (δ2) different from the phase by 180 ° and reflected. In this case, it is easy to control the mirror element 30 (reflecting portion 31).

Further, since each mirror element 30 of the SLM 28 is in its first state (phase 0) when the power is turned off, the control is easy. Each mirror element 30 may be in the second state (phase π) or the like when the power is off.
Further, since the mirror element 30 of the SLM 28 is a two-dimensional array, a large area pattern can be exposed on the wafer W by a single exposure. In the SLM 28, the mirror elements 30 may be arranged in a one-dimensional array, for example, in the X direction (direction corresponding to the non-scanning direction of the wafer W).

  The exposure apparatus EX is an exposure apparatus that exposes the wafer W (substrate) with illumination light IL (exposure light). The illumination optical system ILS irradiates the illumination light IL to the SLM 28 and an array of the mirror elements 30 of the SLM 28. A projection optical system PL for guiding the reflected light from the plurality of mirror elements 30 onto the wafer W and projecting the pattern onto the wafer W, and a plurality of mirrors of the SLM 28 for controlling the pattern exposed on the wafer W. And a modulation control unit 48 (control device) that individually controls the elements 30 to the first state or the second state.

According to the exposure apparatus EX, since the influence of the reflection of the gap regions 34Y and 34X of the SLM 28 is suppressed, a target pattern can be formed on the surface of the wafer W with high accuracy.
Each mirror element 30 of the SLM 28 may be set to a plurality of states including a first state and a third state other than the second state.
Also, the illumination light IL from the illumination optical system ILS is incident on the plurality of mirror elements 30 (reflection elements) obliquely at an incident angle α, and the reflected light from the mirror elements 30 is projected onto the projection optical system PL. Incident light intersects the optical axis AXW of the optical system PL. Accordingly, since the projection optical system PL is non-telecentric on the object plane side, the entire reflected light from the SLM 28 can be irradiated onto the wafer W via the projection optical system PL, and the use efficiency of the illumination light IL is high. Furthermore, the polarization state of the illumination light IL set by the polarization control optical system 6 can be accurately reproduced on the surface of the wafer W.

  The mirror element 30 is provided in a rectangular region whose longitudinal direction is the X direction (first direction), and the wafer W is placed in the Y direction (second direction) orthogonal to the X direction on the image plane of the projection optical system PL. A wafer stage WST (substrate stage) that moves in the corresponding scanning direction is provided, and the modulation control unit 48 generates a pattern (phase distribution) formed by the plurality of mirror elements 30 in accordance with the movement of the wafer W by the wafer stage WST. It is moving in the Y direction. Thereby, the entire surface of the wafer W can be efficiently exposed.

In the above embodiment, the following modifications are possible.
First, in the above-described embodiment, the wafer W is continuously moved to scan and expose the wafer W. In addition, as shown in FIG. 8B, each shot area (for example, SA21) of the wafer W is divided into a plurality of partial areas SB1 to SB5 in the Y direction, and the partial areas are formed in the exposure area 26B of the projection optical system PL. When SB1 or the like reaches, the illumination light IL may be emitted by a predetermined number of pulses, and the partial region SB1 or the like may be exposed with reflected light from the array of mirror elements 30 of the SLM 28. Thereafter, the wafer W is stepped in the Y direction, and after the next partial area SB2 or the like reaches the exposure area 26B, the partial area SB2 or the like is similarly exposed. This method is substantially a step-and-repeat method, but different patterns are exposed on the partial areas SB1 to SB5 and the like.

  In the above-described embodiment, the wave plate 37Y and the like are provided on the surface of the base member 32 facing the gap regions 34Y and 34X. However, as shown in the modification of FIG. 9, the plurality of mirror elements 30 of the SLM 28A are provided. A flat cover glass 40 that transmits the illumination light IL for protecting these reflection parts 31 is disposed so as to face the reflection parts 31, and a part of the cover glass 40 that faces the gap area 34 </ b> Y A wave plate 41Y (for example, a half-wave plate) that makes the polarization state of the illumination light IL3 incident on the gap region 34Y different from the polarization state of the illumination lights IL1 and IL2 reflected by the reflection unit 31 may be formed. In this example, a wavelength plate (not shown) similar to the wavelength plate 41Y is also provided in the portion of the cover glass 40 that faces the gap region 34X.

  Also in this modification, as an example, if the illumination lights IL1 and IL2 reflected by the reflector 31 are linearly polarized light whose polarization direction is the Y direction, the illumination light IL1 and IL2 are reflected by the gap regions 34Y and 34X and pass through the cover glass 40. The polarization direction of the illumination light IL3 is linearly polarized light with the X direction as the polarization direction. According to this modification, in the SLM 28A having a plurality of movable reflecting portions 31, the reflected light from the gap regions 34Y and 34X between the reflecting portions 31 is a region including the plurality of reflecting portions 31 and the gap regions 34Y and 34X. Since the reflectance is hardly changed, the influence of the reflected light from the gap regions 34Y and 34X is suppressed. Therefore, the target pattern can be generated with high accuracy by the SLM 28A.

Further, an absorbing member 42Y or the like that absorbs the illumination light IL3 and weakens the intensity thereof may be formed in a portion of the cover glass 40 that faces the gap regions 34Y and 34X. Also in this case, the reflected light from the gap regions 34Y and 34X can be set to almost zero, and the target pattern can be generated with high accuracy by the SLM 28A.
Further, in the above-described embodiment and its modification, the influence of the reflected light from the gap regions 34Y and 34X is suppressed in the phase modulation type SLMs 28 and 28A, but the inclination about two orthogonal axes in FIG. In the spatial light modulator 10 (SLM 10) having an array of a large number of minute mirror elements 10a (movable reflective elements) having variable angles, a member that changes the polarization state below or above the gap region of the mirror elements 10a, or strength The influence of the illumination light which passes the clearance gap area may be suppressed by arrange | positioning the member etc. which weaken.

Further, the plurality of mirror elements 30 in the SLM 28 that reflects the light from the illumination optical system ILS and gives a phase distribution to the reflected light may be modified so that the inclination angles around two orthogonal axes are variable. . Even in this case, the minimum value of the interval between the plurality of mirror elements 30 may be equal to or less than the wavelength of the incident light.
Further, the phase modulation type SLM 28 may be provided instead of the SLM 10 in the illumination optical system ILS.

In addition, for example, in a transmissive spatial light modulator that modulates incident light using a plurality of liquid crystal cells, a member that converts a polarization state or a member that weakens strength is provided in a gap region between the plurality of liquid crystal cells. It may be arranged to suppress the influence of illumination light passing through the gap region.
In the above-described embodiment, the wave plates 37X and 37Y formed of a birefringent optical material having a plane-parallel plate shape are provided. However, a wave plate using structural birefringence may be used. In this case, a one-dimensional line-and-space periodic structure having a periodic direction in the XY plane and having a period equal to or less than a wavelength on the surface of the base member 32 at a portion facing the gap regions 34Y and 34X between the mirror elements 30. The pattern may be formed. At this time, a pattern exhibiting structural birefringence can be formed by using a method of forming a pattern by etching the base member 32 or a method of depositing a pattern on the base member 32. Further, the pattern may be formed by etching the portions of the cover glass 40 facing the gap regions 34Y and 34X, or the pattern may be deposited on the portions of the cover glass 40 facing the gap regions 34Y and 34X. Such structural birefringence is described in, for example, “Form Birefringent Microstructure: Modeling and Design” by Richter et al., SPIE Vol. 2404, pages 69 to 80.

  In the above embodiment, the non-telecentric projection optical system PL is used on the object side. In addition, as shown in the exposure apparatus EXA of the modified example of FIG. 10, it is also possible to use a bilateral telecentric projection optical system PLA on the object side and the image plane side. In FIG. 10, the exposure apparatus EXA includes an illumination optical system ILSA that generates S-polarized illumination light IL substantially in the + Y direction, a polarization beam splitter 51 that reflects the illumination light IL in the + Z direction, and illumination from the polarization beam splitter 51. A quarter-wave plate 52 for converting the light IL into circularly polarized light, and an SLM (spatial light modulator) 28 having a two-dimensional array of a number of mirror elements 30 that reflect the circularly polarized illumination light IL in the -Z direction; Projection optics that receives the illumination light IL that has been reflected by the mirror element 30 and then transmitted through the quarter-wave plate 52 and the polarizing beam splitter 51, and projects an aerial image (pattern) onto the exposure region 26B on the surface of the wafer W. System PLA. The illumination optical system ILSA is an optical system obtained by removing the mirrors 8B and 8C from the illumination optical system ILS in FIG. The configuration and operation of the SLM 28 are the same as in the embodiment of FIG. The illumination light IL having a small σ value reflected by the SLM 28 enters the projection optical system PL substantially parallel to the optical axis AX of the projection optical system PL.

According to the exposure apparatus EXA of this modification, since the double-sided telecentric projection optical system PLA can be used, the configuration of the exposure apparatus can be simplified.
When the utilization efficiency of the illumination light IL may be reduced to ½, a normal beam splitter may be used instead of the polarization beam splitter 51, and the ¼ wavelength plate 52 may be omitted. In this case, polarized illumination can be used.

  In the case of manufacturing an electronic device (or micro device), as shown in FIG. 11, the electronic device performs step 221 for performing function / performance design of the electronic device, and forms mask pattern data based on this design step. In step 222, which is stored in the main control system of the exposure apparatuses EX, EXA, step 223, in which a substrate (wafer) which is the base material of the device is manufactured and resist is applied, and the exposure apparatuses EX, EXA (or exposure method) described above A substrate processing step 224 including a step of exposing a spatial image of the phase distribution generated by the SLMs 28 and 28A to a substrate (sensitive substrate), a step of developing the exposed substrate, heating (curing) and etching of the developed substrate, Device assembly step (processing process such as dicing process, bonding process, packaging process, etc.) The included) 225, and an inspection step 226, and the like.

This device manufacturing method includes a step of exposing the wafer W using the exposure apparatus of the above-described embodiment, and a step of processing the exposed wafer W (step 224). Therefore, an electronic device can be manufactured with high accuracy.
In addition, the above-described embodiment is not limited to application to a semiconductor device manufacturing process. For example, a manufacturing process such as a liquid crystal display element and a plasma display, an imaging element (CMOS type, CCD, etc.), a micromachine, The present invention can be widely applied to manufacturing processes of various devices (electronic devices) such as MEMS (Microelectromechanical Systems), thin film magnetic heads, and DNA chips.

  In addition, it is not limited to the above-mentioned embodiment, A various structure can be taken in the range which does not deviate from the summary of this invention.

EX, EXA ... exposure apparatus, ILS, ILSA ... illumination optical system, PL, PLA ... projection optical system, W ... wafer, 28 ... SLM (spatial light modulator), 30 ... mirror element, 32 ... base member, 34X, 34Y ... Boundary region, 35A, 35B ... Hinge part, 37X, 37Y ... Wave plate, 48 ... Modulation control part

Claims (23)

A spatial light modulator comprising a plurality of movable optical elements arranged in a predetermined plane on which light is incident, and modulating and emitting the incident light,
Among the plurality of movable optical elements, the polarization state of light emitted from the gap enters the gap between the two movable optical elements adjacent to each other, the polarization state of light emitted from said movable optical element A spatial light modulator comprising a conversion member that is different from the above. It said conversion member is the wavelength plate, a spatial light modulator according to claim 1. The spatial light modulator according to claim 2 , wherein the wave plate is formed of a birefringent optical material. The spatial light modulator according to claim 2 , wherein the wave plate has a periodic structure having a period shorter than a wavelength of the incident light. A support member that supports the plurality of movable optical elements via a flexible member;
The spatial light modulator according to any one of claims 1 to 4 , wherein the conversion member is provided on a surface of the support member facing the gap. The plurality of movable optical elements are reflective elements having reflective surfaces for reflecting the incident light;
The spatial light modulator according to any one of claims 1 to 5 , wherein the reflection surfaces of the plurality of movable reflection elements move so as to change positions along a traveling direction of the incident light. The reflection element includes a plurality of first states that reflect the incident light and a second state that reflects the incident light by changing the phase of the incident light to be different from the phase in the first state. The spatial light modulator according to claim 6 , wherein the spatial light modulator is set to any of the following states. The plurality of movable optical elements are reflective elements having reflective surfaces for reflecting the incident light;
Wherein the plurality of reflective elements are tiltable to each of the reflective surfaces around at least one axis, the spatial light modulator according to any one of claims 1 to 5. The spatial light modulator according to any one of claims 1 to 8 , wherein the plurality of movable optical elements are two-dimensionally arranged. It said two of said movable optical elements adjacent a polygonal modulator as claimed in any one of claims 1 to 9. In two of the movable optical element, wherein the adjacent, the sides of each other movable optical element side, a parallel straight line with each other, the spatial light modulator according to any one of claims 1 to 10. A spatial light modulator comprising a plurality of movable optical elements arranged in a predetermined plane on which light is incident, and modulating and emitting the incident light,
A light transmissive member provided on the incident side of the predetermined surface;
The light transmitting member is configured such that, of the plurality of movable optical elements, a polarization state of light toward a gap between two movable optical elements adjacent to each other is different from a polarization state of light emitted from the movable optical element. A spatial light modulator comprising a conversion member to be turned on. The spatial light modulator according to claim 12 , wherein the conversion member is provided in a part of the light transmission member facing the gap. In an exposure apparatus that exposes a substrate with exposure light,
A spatial light modulator according to any one of claims 1 to 13 ,
An illumination optical system for irradiating the plurality of movable optical elements of the spatial light modulator with the exposure light;
A projection optical system for guiding light from the plurality of movable optical elements to the substrate and projecting a pattern on the substrate;
A control device for individually controlling the plurality of movable optical elements of the spatial light modulator to control a pattern exposed on the substrate;
An exposure apparatus comprising: The plurality of movable optical elements are reflective elements having reflective surfaces parallel to each other for reflecting the incident exposure light, respectively.
The control device includes:
The exposure apparatus according to claim 14 , wherein positions of the reflecting surfaces of the plurality of reflecting elements are changed in an optical axis direction of the projection optical system. Irradiating the plurality of movable optical elements of the spatial light modulator according to any one of claims 1 to 13 with light;
Individually controlling the plurality of movable optical elements to modulate the light that has passed through the plurality of movable optical elements;
Use of a spatial light modulator comprising: In an exposure method for exposing a substrate with exposure light,
Irradiating the plurality of movable optical elements of the spatial light modulator according to any one of claims 1 to 13 with the exposure light;
Exposing the substrate with light from the plurality of movable optical elements via a projection optical system;
Individually controlling the plurality of movable optical elements of the spatial light modulator to control a pattern exposed on the substrate;
An exposure method comprising: In a modulation method for modulating and emitting incident light,
Irradiating incident light to a plurality of movable optical elements arranged in a predetermined plane;
Using the plurality of movable optical elements to modulate the incident light,
Among the plurality of movable optical elements, the polarization state of light emitted from the gap enters the gap between the two movable optical elements adjacent to each other, the polarization state of light emitted from said movable optical element Modulation method different from In a modulation method for modulating and emitting incident light,
Irradiating incident light to a plurality of movable optical elements arranged in a predetermined plane;
Using the plurality of movable optical elements to modulate the incident light,
A modulation method in which a polarization state of light traveling toward a gap between two adjacent movable optical elements among the plurality of movable optical elements is different from a polarization state of light emitted from the movable optical element. In an exposure method for exposing a substrate with exposure light,
Modulating the exposure light using the modulation method according to claim 18 or 19 ,
Exposing the substrate with the modulated light through a projection optics;
Individually controlling the plurality of movable optical elements to control a pattern exposed on the substrate;
An exposure method comprising: The plurality of movable optical elements are reflective elements having reflective surfaces parallel to each other for reflecting the incident exposure light, respectively.
21. The exposure method according to claim 17 or 20 , wherein the positions of the reflecting surfaces of the plurality of reflecting elements are changed in the optical axis direction of the projection optical system. Forming a pattern of a photosensitive layer on a substrate using the exposure apparatus according to claim 14 or 15 ,
Processing the substrate on which the pattern is formed;
A device manufacturing method including: Forming a pattern of a photosensitive layer on a substrate using the exposure method according to claim 17, 20 or 21 ,
Processing the substrate on which the pattern is formed;
A device manufacturing method including:

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