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JP6547232B2 - Plating solution and method of producing plated product - Google Patents

Plating solution and method of producing plated product Download PDF

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Publication number
JP6547232B2
JP6547232B2 JP2017021006A JP2017021006A JP6547232B2 JP 6547232 B2 JP6547232 B2 JP 6547232B2 JP 2017021006 A JP2017021006 A JP 2017021006A JP 2017021006 A JP2017021006 A JP 2017021006A JP 6547232 B2 JP6547232 B2 JP 6547232B2
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plating
mol
plating solution
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JP2018127667A5 (en
JP2018127667A (en
Inventor
縄舟 秀美
秀美 縄舟
西脇 宏
宏 西脇
敏一 村田
敏一 村田
秀浩 吉岡
秀浩 吉岡
美幸 亀川
美幸 亀川
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Fuso Co Ltd
Techno Roll Co Ltd
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Fuso Co Ltd
Techno Roll Co Ltd
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Application filed by Fuso Co Ltd, Techno Roll Co Ltd filed Critical Fuso Co Ltd
Priority to US15/576,892 priority patent/US20200040477A1/en
Priority to PCT/JP2017/030445 priority patent/WO2018146841A1/en
Priority to EP17800356.2A priority patent/EP3388558A1/en
Priority to KR1020177033982A priority patent/KR20190115481A/en
Priority to TW106144032A priority patent/TW201835387A/en
Publication of JP2018127667A publication Critical patent/JP2018127667A/en
Publication of JP2018127667A5 publication Critical patent/JP2018127667A5/ja
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    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/04Electroplating: Baths therefor from solutions of chromium
    • C25D3/06Electroplating: Baths therefor from solutions of chromium from solutions of trivalent chromium
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/04Electroplating: Baths therefor from solutions of chromium
    • C25D3/10Electroplating: Baths therefor from solutions of chromium characterised by the organic bath constituents used

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)

Description

本発明は、めっき液ならびにめっき製品の製造方法に関し、より詳しくは、3価クロムめっきに用いられるめっき液と3価クロムめっきが施されてなるめっき製品の製造方法とに関する。   The present invention relates to a plating solution and a method for producing a plated product, and more particularly to a plating solution used for trivalent chromium plating and a method for producing a plated product to which trivalent chromium plating is applied.

従来、金属製品やプラスチック製品にクロムめっきを施しためっき製品が広く用いられている。この種のめっき製品を製造するのにあたっては6価クロムを含むめっき液に代えて環境に優しい3価クロムを含むめっき液を利用する場面が増えている(下記特許文献1参照)。   BACKGROUND ART Conventionally, plated products in which chromium plating is performed on metal products and plastic products are widely used. In the production of this type of plating product, the use of plating solutions containing environmentally friendly trivalent chromium in place of plating solutions containing hexavalent chromium is increasing (see Patent Document 1 below).

特開2000−249340号公報JP 2000-249340 A

近年の環境意識の高まりにより、6価クロムめっきに置き換えて3価クロムめっきを採用することが強く要望されるようになってきている。しかしながら3価クロムめっきは、めっきを施す対象となる製品に対する付きまわり性において6価クロムめっきより劣ることから現状では採用される場面が限られてしまっている。また、3価クロムめっきでは電流密度とめっきの析出厚さとの関係が直線的なものになりにくく均一電着性を発揮させ難い。そのようなことから、めっき厚さが数μmレベルの装飾めっきなどでは3価クロムめっきの採用事例が見られるものの金型のような複雑な形状のめっき製品を作製する場面や厚めっき製品を作製するような場面では3価クロムめっきの採用が殆ど進んではいない。そこで、本発明は、3価クロムめっき用のめっき液でありながら6価クロムめっきと同等のめっき製品を作製し得るめっき液を提供し、ひいては、環境に優しいめっき製品の適用範囲の拡大を目的としている。   With the recent increase in environmental awareness, there is a strong demand for replacing trivalent chromium plating with trivalent chromium plating. However, since trivalent chromium plating is inferior to hexavalent chromium plating in coverage of the product to be plated, situations where it is adopted at present are limited. In addition, in the case of trivalent chromium plating, the relationship between the current density and the deposition thickness of the plating is difficult to be linear and it is difficult to exhibit uniform electrodeposition. As such, in the case of decorative plating with a plating thickness of several μm, there are cases where adoption of trivalent chromium plating can be seen, but in the case of producing plating products with complex shapes such as molds The adoption of trivalent chromium plating has hardly advanced in such a situation. Therefore, the present invention provides a plating solution capable of producing a plating product equivalent to hexavalent chromium plating while being a plating solution for trivalent chromium plating, and aims to expand the application range of environmentally friendly plating products. And

上記のような目的を達成すべく本発明者が鋭意検討を行ったところ、硫酸クロムを含むめっき液においてCr3+イオンの濃度を特定の範囲内に調整することで当該めっき液が6価クロムを含むめっき液と同等の付きまわり性を示すことを見出して本発明を完成させるに至った。 The inventors of the present invention conducted intensive studies to achieve the above object. According to the plating solution containing chromium sulfate, the plating solution contains hexavalent chromium by adjusting the concentration of Cr 3+ ions within a specific range. It has been found that the plating solution has the same throwing power as the contained plating solution, and the present invention has been completed.

即ち、本発明は、3価クロムめっきに用いられるめっき液であって、硫酸クロムと蟻酸とを含み、Cr3+イオンの濃度が0.1mol/L以上1mol/L以下で、前記蟻酸の濃度が0.05mol/L以上0.2mol/L以下であるめっき液を提供する。 That is, the present invention is a plating solution used for trivalent chromium plating, containing chromium sulfate and formic acid, and having a concentration of Cr 3+ ions of 0.1 mol / L or more and 1 mol / L or less, wherein the concentration of formic acid is Provided is a plating solution which is 0.05 mol / L or more and 0.2 mol / L or less.

また、本発明は、硫酸クロムを含むめっき液を収容しためっき浴で電気めっきを行うめっき工程を実施し、該めっき工程によって3価クロムめっきが施されためっき製品を作製するめっき製品の製造方法であって、前記めっき工程では、前記めっき液として、Cr3+イオンの濃度が0.1mol/L以上1mol/L以下であるめっき液を用い、前記めっき浴での浴温を20℃以上40℃未満とし、且つ、前記電気めっきでの電流密度を2A/dm以上20A/dm以下とするめっき製品の製造方法を提供する。 Moreover, this invention implements the plating process which electroplates with the plating bath which accommodated the plating solution containing chromium sulfate, The manufacturing method of the plating product which produces the plating product in which trivalent chromium plating was given by this plating process In the plating step, a plating solution having a concentration of 0.1 mol / L or more and 1 mol / L or less of Cr 3+ ions is used as the plating solution, and a bath temperature in the plating bath is 20 ° C. or more and 40 ° C. Provided is a method for producing a plated product, wherein the current density in the electroplating is 2A / dm 2 or more and 20A / dm 2 or less.

本発明によれば付きまわり性に優れた3価クロムめっき用のめっき液が提供されるため、環境に優しいめっき製品が採用される機会を拡大し得る。   According to the present invention, a plating solution for trivalent chromium plating with excellent coverage is provided, so the opportunity for adopting environmentally friendly plating products can be expanded.

一般文献等において開示がされている6価クロムめっきと3価クロムめっきとにおける電流密度とめっき厚さとの関係図。The related figure of the current density and plating thickness in hexavalent chromium plating and trivalent chromium plating currently indicated in general literatures etc. 本発明のめっき液を用いた3価クロムめっきにおける電流密度とめっき厚さとの関係を示した図。The figure which showed the relationship of the current density and plating thickness in trivalent chromium plating using the plating solution of this invention. 一実施形態のめっき液を用いたハルセル試験の結果を示した図。The figure which showed the result of the Hull cell test using the plating solution of one embodiment. めっき厚さを蛍光X線型膜厚測定器にて測定した結果を示した図。The figure which showed the result of having measured plating thickness with the fluorescent X ray type film thickness measuring device. 他の実施形態のめっき液を用いたハルセル試験の結果を示した図。The figure which showed the result of the Hull cell test using the plating solution of other embodiment. めっき厚さを蛍光X線型膜厚測定器にて測定した結果を示した図。The figure which showed the result of having measured plating thickness with the fluorescent X ray type film thickness measuring device. 他の実施形態のめっき液を用いたハルセル試験の結果を示した図。The figure which showed the result of the Hull cell test using the plating solution of other embodiment. 他の実施形態のめっき液を用いたハルセル試験の結果を示した図。The figure which showed the result of the Hull cell test using the plating solution of other embodiment. 他の実施形態のめっき液を用いたハルセル試験の結果を示した図。The figure which showed the result of the Hull cell test using the plating solution of other embodiment. 他の実施形態のめっき液を用いたハルセル試験の結果を示した図。The figure which showed the result of the Hull cell test using the plating solution of other embodiment. 他の実施形態のめっき液を用いたハルセル試験の結果を示した図。The figure which showed the result of the Hull cell test using the plating solution of other embodiment.

以下に、本発明の好ましい実施の形態について説明する。
まず、めっき製品の製造方法について説明する。
本実施形態のめっき製品の製造方法においては、めっきを施す対象となる製品(以下、原製品」ともいう)の表面性状を整えるための前処理工程と、前処理された原製品(以下、「前処理品」ともいう)に対して3価クロムめっきを施すめっき工程を実施する。本実施形態のめっき製品の製造方法においては、必要に応じて、前処理工程とめっき工程との間に前処理品に下地めっきを施す下地めっき工程や、下地めっきされた前処理品(以下、「下地めっき品」ともいう)に対してさらに中間めっきを施す中間めっき工程を実施してもよい。この場合、3価クロムめっきは、中間めっきが施された製品(以下「中間めっき品」ともいう)に対する仕上めっきとして実施される。
Hereinafter, preferred embodiments of the present invention will be described.
First, a method of manufacturing a plated product will be described.
In the method of manufacturing a plated product according to the present embodiment, a pretreatment step for adjusting the surface properties of a product to be plated (hereinafter, also referred to as an original product), and a pretreated original product (hereinafter referred to as The plating step is carried out to apply trivalent chromium plating to a "pre-treated product". In the method of manufacturing a plated product according to the present embodiment, a base plating step of subjecting the pre-treated product to base plating between the pre-treatment step and the plating step, and a pre-plated pretreated product (hereinafter referred to as An intermediate plating step may be performed in which intermediate plating is further performed on the “base-plated product”). In this case, trivalent chromium plating is carried out as finish plating on a product subjected to intermediate plating (hereinafter also referred to as "intermediate plated product").

本実施形態のめっき製品の製造方法においては、めっき工程で3価クロムめっきが施された製品に対してさらに化学的な表面処理や熱処理などを施してもよい。また、めっき製品には必要に応じてクリアー塗装などの塗装を施してもよい。   In the method of manufacturing a plated product according to the present embodiment, the product to which trivalent chromium plating has been applied in the plating step may be further subjected to chemical surface treatment, heat treatment or the like. Moreover, you may apply coating, such as a clear coating, to a plating product as needed.

前処理工程を実施する前記原製品としては、例えば、樹脂製品、セラミックス製品、金属製品、樹脂部品と金属部品とが組み合わされた複合製品、並びに、金属部品にセラミックスが被覆された複合製品などが挙げられる。原製品を形成する樹脂としては、例えば、一般的な熱可塑性樹脂や熱硬化性樹脂が挙げられる。該樹脂は、繊維強化プラスチック(FRP)などであってもよい。原製品を形成する前記セラミックスとしては、例えば、酸化ケイ素や酸化アルミニウムなどを主成分とした一般的なものが挙げられる。前記セラミックスとしては、琺瑯などのガラス質のものであってもよい。原製品を形成する前記金属としては、例えば、鉄や銅などといった一般的な金属が挙げられる。前記金属は、合金などであってもよい。このような原製品に対する前処理としては、例えば、機械研磨、ホーニング加工、ブラスト加工などによる研磨やアルカリ脱脂などの脱脂が挙げられる。前記下地めっき工程や前記中間めっき工程では、仕上めっき製品の美観や耐食性の向上などの目的で前処理品や下地めっき品に対して数μmの厚さでニッケルめっき、銅めっき、鉄めっきなどの各種めっきを施すことができる。   Examples of the base product to be subjected to the pretreatment step include resin products, ceramic products, metal products, composite products in which resin parts and metal parts are combined, and composite products in which metal parts are coated with ceramics, etc. It can be mentioned. As a resin which forms an original product, a general thermoplastic resin and a thermosetting resin are mentioned, for example. The resin may be fiber reinforced plastic (FRP) or the like. As said ceramics which form an original product, the general thing which has a silicon oxide, an aluminum oxide, etc. as a main component is mentioned, for example. The ceramic may be a glass such as a crucible. As said metal which forms an original product, general metals, such as iron and copper, are mentioned, for example. The metal may be an alloy or the like. Examples of pretreatment for such an original product include mechanical polishing, honing, polishing by blasting, and degreasing such as alkaline degreasing. In the base plating step and the intermediate plating step, nickel plating, copper plating, iron plating, etc. with a thickness of several μm on a pre-treated product or a base plated product for the purpose of improving the appearance and corrosion resistance of finished plated products. Various plating can be applied.

3価クロムめっきを施す前記めっき工程では、前処理品、下地めっき品、及び、中間めっき品などをワークとした電気めっきが実施される。該電気めっきでは、硫酸クロムを含むめっき液を収容しためっき浴を使って前記ワークに3価クロムめっきが施される。以下においては、該めっき工程で用いるめっき液について詳細に説明する。   In the plating step of applying trivalent chromium plating, electroplating using a pre-treatment product, a base plating product, an intermediate plating product or the like as a work is performed. In the electroplating, the work is plated with trivalent chromium using a plating bath containing a plating solution containing chromium sulfate. The plating solution used in the plating step will be described in detail below.

前記めっき工程では、ワークに対して付きまわり性の良好なめっきを行う上において前記めっき液としてCr3+イオンの濃度が0.1mol/L以上1mol/L以下であるめっき液を用いることが重要である。該めっき液には、主成分となる硫酸クロムに加え、錯化剤、pH緩衝剤、導電剤、及び、界面活性剤などを含有させることができる。なお、該めっき液の溶媒となる水としては、例えば、工業用水、水道水、イオン交換水、蒸留水、純水等が挙げられる。 In the plating step, it is important to use a plating solution having a Cr 3+ ion concentration of 0.1 mol / L or more and 1 mol / L or less as the plating solution in order to perform plating with good throwing power on the work. is there. The plating solution can contain, in addition to chromium sulfate as a main component, a complexing agent, a pH buffer, a conductive agent, a surfactant, and the like. In addition, as water used as a solvent of this plating solution, industrial water, tap water, ion exchange water, distilled water, pure water etc. are mentioned, for example.

前記硫酸クロムは、上記のようにめっき浴におけるCr3+イオンの濃度が0.1mol/L以上1mol/L以下となるようにめっき液に含有される。該硫酸クロムは、めっき浴におけるCr3+イオンの濃度が0.1mol/L以上0.3mol/L以下となるようにめっき液に含有されることが好ましい。このような好ましいめっき液を用いることでめっき工程でのワークに対する3価クロムめっきの付きまわり性をより良好なものにすることができる。 The chromium sulfate is contained in the plating solution such that the concentration of Cr 3+ ions in the plating bath is 0.1 mol / L or more and 1 mol / L or less as described above. The chromium sulfate is preferably contained in the plating solution such that the concentration of Cr 3+ ions in the plating bath is 0.1 mol / L or more and 0.3 mol / L or less. By using such a preferable plating solution, coverage of trivalent chromium plating on a work in a plating process can be made better.

本実施形態のめっき液では、Cr3+イオンの供給源として含有させる硫酸クロムの一部を塩酸クロム、塩基性硫酸クロム、クロム明礬、及び、硝酸クロムからなる群から選ばれる1種以上に置き換えることも可能であるが、塩酸クロムを多く含有させるとめっき時にアノードにおいて塩素ガスを発生させるおそれがあり、硝酸クロムを多く含有させるとめっき時に電流密度の低下を招くおそれがある。従って、めっき液におけるCr3+イオンの供給源に占める硫酸クロムの割合は、90mol%以上であることが好ましい。硫酸クロムの割合は、95mol%以上であることがより好ましく、99mol%以上であることがさらに好ましい。めっき液におけるCr3+イオンの供給源は、実質的に硫酸クロムのみであることがとりわけ好ましい。 In the plating solution of the present embodiment, part of the chromium sulfate contained as a source of Cr 3+ ions is replaced with one or more selected from the group consisting of chromium chloride, basic chromium sulfate, chromium alum and chromium nitrate. However, if a large amount of chromium hydrochloride is contained, chlorine gas may be generated at the anode at the time of plating, and if a large amount of chromium nitrate is contained, the current density may be reduced at the time of plating. Therefore, the proportion of chromium sulfate in the source of Cr 3+ ions in the plating solution is preferably 90 mol% or more. The proportion of chromium sulfate is more preferably 95 mol% or more, and still more preferably 99 mol% or more. It is particularly preferred that the source of Cr 3+ ions in the plating solution is essentially only chromium sulfate.

本実施形態のめっき液に含有させる前記錯化剤としては、有機酸やその塩を用いることができる。該有機酸としては、例えば、シュウ酸、クエン酸、蟻酸、マレイン酸、マロン酸、酒石酸、リンゴ酸、酢酸、フタル酸、プロピオン酸、エチレンジアミン4酢酸などが挙げられる。これらの塩としては、例えば、リチウム塩、カリウム塩、ナトリウム塩などのアルカリ金属塩、マグネシウム塩、カルシウム塩といったアルカリ土類金属塩が挙げられる。なかでも前記蟻酸は錯化剤として特に有効な成分であり、濃度が0.05mol/L以上0.2mol/L以下となるようにめっき液に含有されることが重要である。めっき液における前記蟻酸の濃度は、0.08mol/L以上0.12mol/L以下であることがより好ましい。   An organic acid or a salt thereof can be used as the complexing agent to be contained in the plating solution of the present embodiment. Examples of the organic acid include oxalic acid, citric acid, formic acid, maleic acid, malonic acid, tartaric acid, malic acid, acetic acid, phthalic acid, propionic acid, ethylenediaminetetraacetic acid and the like. Examples of these salts include alkali metal salts such as lithium salts, potassium salts, alkali metal salts such as sodium salts, magnesium salts and calcium salts. Above all, formic acid is a particularly effective component as a complexing agent, and it is important that the formic acid is contained in the plating solution so as to have a concentration of 0.05 mol / L or more and 0.2 mol / L or less. The concentration of the formic acid in the plating solution is more preferably 0.08 mol / L or more and 0.12 mol / L or less.

上記の有機酸やその塩については、前記pH緩衝剤としても一定以上の効果を発揮する。また、前記錯化剤としては、尿素やカルバミン酸などのアミノカルボニル化合物を採用しても良い。なかでも尿素はpH緩衝剤としての機能を有するとともにめっき被膜に対する窒素の供給源として機能し、被膜の硬質化に有効である。さらに尿素にはめっき液中に水酸化クロムなどの沈殿物が発生することを抑制する効果が期待できる。このような点において、前記尿素は、濃度が0.1mol/L以上1mol/L以下となるようにめっき液に含有されることが好ましい。めっき液における前記尿素の濃度は、0.2mol/L以上0.8mol/L以下であることがより好ましく、0.4mol/L以上0.6mol/L以下であることが特に好ましい。   The above-mentioned organic acids and salts thereof exhibit a certain effect or more even as the above-mentioned pH buffer. Moreover, as said complexing agent, you may employ | adopt aminocarbonyl compounds, such as urea and carbamic acid. Among these, urea has a function as a pH buffer, functions as a nitrogen source for the plating film, and is effective for hardening the film. Further, urea can be expected to have the effect of suppressing the formation of precipitates such as chromium hydroxide in the plating solution. From such a point, it is preferable that the urea be contained in the plating solution so as to have a concentration of 0.1 mol / L or more and 1 mol / L or less. The concentration of the urea in the plating solution is more preferably 0.2 mol / L or more and 0.8 mol / L or less, and particularly preferably 0.4 mol / L or more and 0.6 mol / L or less.

上記のようなもの以外に前記pH緩衝剤として利用可能なものを挙げると、例えば、ホウ酸やホウ酸塩などが挙げられる。該ホウ酸をめっき液に含有させる場合、前記pH緩衝剤として含有される有機酸や尿素などの量などにもよるが、通常、0.5mol/L以上1mol/L以下の濃度となるようにめっき液に含有される。前記めっき液は、pH緩衝剤などによってpHが1以上2以下に調整されることが好ましく、1.3以上1.7以下のpHとなるように調整されることがより好ましい。   Other than those mentioned above, examples of usable ones as the pH buffer include boric acid and borate. When the boric acid is contained in the plating solution, the concentration is usually 0.5 mol / L or more and 1 mol / L or less depending on the amount of the organic acid, urea, etc. contained as the pH buffer. Contained in the plating solution. The pH of the plating solution is preferably adjusted to 1 or more and 2 or less with a pH buffer or the like, and more preferably adjusted to a pH of 1.3 or more and 1.7 or less.

前記導電剤としては、例えば、塩化アンモニウム、塩化ナトリウム、塩化カリウム、硫酸アンモニウム、硫酸ナトリウム、硫酸カリウム、硝酸アンモニウム、硝酸ナトリウム、硝酸カリウムなどが挙げられる。また、前記界面活性剤としては、例えば、ラウリル硫酸ナトリウム、ドデシル硫酸ナトリウム、ポリエチレングリコール、スルホコハク酸ジイソヘキシル、硫酸2−エチルヘキシル、スルホコハク酸ジイソブチル、スルホコハク酸ジイソアミル、スルホコハク酸イソデシルなどが挙げられる。   Examples of the conductive agent include ammonium chloride, sodium chloride, potassium chloride, ammonium sulfate, sodium sulfate, potassium sulfate, ammonium nitrate, sodium nitrate, potassium nitrate and the like. Examples of the surfactant include sodium lauryl sulfate, sodium dodecyl sulfate, polyethylene glycol, diisohexyl sulfosuccinate, 2-ethylhexyl sulfate, diisobutyl sulfosuccinate, diisoamyl sulfosuccinate, and isodecyl sulfosuccinate.

前記めっき液には、その他の添加剤として、ポリエチレングリコール、ポリビニルアルコール、ゼラチンなどの被膜形成剤、消泡剤など各種のものを含有させることができる。   The plating solution may contain various additives such as polyethylene glycol, polyvinyl alcohol, a film forming agent such as gelatin, and a defoamer as other additives.

このような成分を含むめっき液を用いためっき工程では、前記めっき浴での浴温を20℃以上40℃未満とすることが重要である。前記めっき工程でのめっき浴の浴温は、低温である方がワークに対する3価クロムめっきの付きまわり性をより良好なものにすることができる。その一方でめっき浴の浴温は、一定以上の温度を有する方がめっき液に含まれる成分の析出を抑制することができ、めっき表面にざらつきが生じることを抑制することができる。そのような点において前記めっき工程でのめっき浴の浴温は、23℃以上29℃以下であることがより好ましく、24℃以上28℃以下であることが特に好ましい。このような好ましい温度条件でめっき工程を実施することで仕上めっき製品に対して厚さが均一で表面光沢に優れためっき被膜を備えさせることができる。   In the plating step using a plating solution containing such components, it is important to set the bath temperature in the plating bath to 20 ° C. or more and less than 40 ° C. The lower the temperature of the plating bath in the plating step, the better the coverage of the trivalent chromium plating on the work can be. On the other hand, when the bath temperature of the plating bath has a certain temperature or more, the deposition of the components contained in the plating solution can be suppressed, and generation of roughness on the plating surface can be suppressed. In such a point, the bath temperature of the plating bath in the plating step is more preferably 23 ° C. or more and 29 ° C. or less, and particularly preferably 24 ° C. or more and 28 ° C. or less. By carrying out the plating process under such a preferable temperature condition, it is possible to provide a plated film having uniform thickness and excellent surface gloss to a finished plated product.

前記めっき工程での電気めっきにおいては、電流密度を2A/dm以上20A/dm以下とすることが重要である。前記電流密度は、2A/dm以上15A/dm以下であることがより好ましく、2A/dm以上13A/dm以下とすることが特に好ましい。このような好ましい電流密度でめっきを実施することでワークに対する3価クロムめっきの付きまわり性をより良好なものにすることができる。 In electroplating in the plating step, it is important to set the current density to 2 A / dm 2 or more and 20 A / dm 2 or less. The current density is more preferably 2A / dm 2 or more 15A / dm 2 or less, and particularly preferably 2A / dm 2 or more 13A / dm 2 or less. Conducting plating at such a preferable current density can improve the coverage of trivalent chromium plating on a work.

前記めっき工程においては、めっき液中に水素ガスによる気泡が発生するためワークへの気泡の付着を抑制すべくめっき中のワークに振動を与えたり、ワークの下方から不活性ガスなどによる気泡を発生させるバブリング処理を施すなどしてもよい。   In the plating step, bubbles are generated by hydrogen gas in the plating solution, so that vibration is given to the workpiece during plating to suppress adhesion of the bubbles to the workpiece, or bubbles are generated by inert gas from below the workpiece. Alternatively, bubbling may be performed.

上記のようなめっき液の成分濃度、めっき液の浴温、ワークに与える電流密度などといっためっき工程における各種条件については、必ずしも、めっき工程の開始直後からめっき工程を完了するまでの間、常に上記のような範囲内に保たれていなければその効果が発揮されないわけではないが、全期間においてめっき開始時とほぼ同一の条件下にあることが好ましい。   With regard to various conditions in the plating process such as the concentration of the components of the plating solution as described above, the bath temperature of the plating solution, the current density given to the work, etc. Although the effect is not exhibited unless it is kept within such a range, it is preferable to be under almost the same conditions as the start of plating in all periods.

本実施形態の前記めっき工程においては、ワークのコーナー部や微細な凹凸部といった従来であればめっき厚さが平坦部とは異なり易い部分においても平坦部と同等の厚さでクロムめっきが施され、3価クロムめっきでありながら6価クロムめっきと同様の付きまわり性と均一電着性とが発揮される。本実施形態において作製されるめっき製品におけるめっき厚さは、当該めっき製品の用途などに応じて適宜設定されうるが、本発明の効果をより顕著に発揮させる上において下地めっきなどを除いた3価クロムめっき部分だけのめっき厚さを5μm以上600μm以下とすることが好ましい。前記めっき厚さは、50μm以上であることがより好ましく、100μm以上であることが特に好ましい。該めっき厚さの測定が必要な場合、例えば、蛍光X線式膜厚計などによって測定すればよい。但し、めっき厚さが50μm以上となると蛍光X線式膜厚計での測定は、困難になるので、そのような場合は、走査型電子顕微鏡(SEM)でめっき製品の断面観察を実施すればよい。そして、前記めっき厚さは、無作為に選択した数箇所においてめっき製品のめっき厚さを測定し、異常値を除いた測定結果を算術平均することで求めることができる。   In the plating step of the present embodiment, chromium plating is applied to the same thickness as the flat portion even in a portion where the plating thickness is easily different from the flat portion in the conventional case, such as a corner portion or a minute uneven portion of a work In addition to trivalent chromium plating, the same throwing power and uniform electrodeposition as hexavalent chromium plating are exhibited. The plating thickness of the plated product manufactured in the present embodiment may be appropriately set according to the application of the plated product, etc., but in order to more effectively exhibit the effects of the present invention, trivalent plating excluding the base plating etc. It is preferable to set the plating thickness of only the chromium plating portion to 5 μm or more and 600 μm or less. The plating thickness is more preferably 50 μm or more, particularly preferably 100 μm or more. When the plating thickness needs to be measured, for example, it may be measured by a fluorescent X-ray film thickness meter or the like. However, if the plating thickness is 50 μm or more, measurement with a fluorescent X-ray film thickness meter becomes difficult, and in such a case, cross-sectional observation of a plated product with a scanning electron microscope (SEM) is carried out Good. And the said plating thickness can be calculated | required by measuring the plating thickness of a metal-plating product in several places selected at random, and carrying out the arithmetic mean of the measurement result except an abnormal value.

なお、ここではこれ以上の詳細な説明を繰り返さないが、本実施形態におけるめっき製品の製造方法やめっきに用いるめっき液には、これらについて上記に具体的な例示が無い事項であっても従来公知の技術事項を本発明の効果が著しく損なわれない範囲において適宜採用が可能である。
即ち、本発明は上記例示の範囲内のものに限定されるものではない。
Although the detailed description above will not be repeated here, the method for producing a plated product according to the present embodiment and the plating solution used for plating may be conventionally known even if there is no specific illustration thereof. The technical matters in the above can be suitably adopted within the range where the effects of the present invention are not significantly impaired.
That is, the present invention is not limited to the above exemplified range.

次に実施例を挙げて本発明をさらに詳しく説明するが、本発明はこれらに限定されるものではない。   EXAMPLES The present invention will next be described in more detail by way of examples, which should not be construed as limiting the invention thereto.

(本発明の概要:従来の3価クロムめっきとの違い)
一般文献等において開示がされている6価クロムめっきと3価クロムめっきとにおける電流密度とめっき厚さとの関係を図1に示す。
この図からは、従来の3価クロムめっきでは電流密度とめっき厚さとの関係を示す直線の傾きが電流密度が5A/dm付近で急激に大きくなり均一電着性が発揮され難いことがわかる。
また、この図からは、従来の3価クロムめっきにおいては5A/dm以下の電流密度でめっきを行うことが難しく付きまわり性に優れためっきを行うことが困難であることがわかる。
(Summary of the invention: Difference from conventional trivalent chromium plating)
The relationship between the current density and the plating thickness in hexavalent chromium plating and trivalent chromium plating disclosed in the general literature and the like is shown in FIG.
From this figure, it can be seen that in the conventional trivalent chromium plating, the slope of the straight line indicating the relationship between the current density and the plating thickness is sharply increased near the current density of 5 A / dm 2 , making uniform electrodeposition difficult to be exhibited. .
Further, it can be understood from this figure that in conventional trivalent chromium plating, it is difficult to perform plating at a current density of 5 A / dm 2 or less, and it is difficult to perform plating with excellent spinnability.

これに対し本発明のめっき液を用いた場合、電流密度とめっき厚さとの関係は、図2に示したようになり、6価クロムめっきと同様の5A/dm以下の低い電流密度で3価クロムめっきが可能となる。
また、本発明のめっき液を用いた場合、5A/dm以下の低い電流密度の領域から30A/dm付近の高い電流密度の領域に至るまで電流密度とめっき厚さとの関係が直線的なものになり均一電着性に優れためっきが実施可能となる。
従って、この図からも本発明によれば付きまわり性と均一電着性とに優れた3価クロムめっき用のめっき液が提供されることがわかる。
この点について、以下に検討結果を詳述する。
On the other hand, when the plating solution of the present invention is used, the relationship between the current density and the plating thickness is as shown in FIG. 2, and it is 3 at a low current density of 5 A / dm 2 or less similar to hexavalent chromium plating. Valence chromium plating is possible.
When the plating solution of the present invention is used, the relationship between the current density and the plating thickness is linear from the area of low current density of 5 A / dm 2 or less to the area of high current density near 30 A / dm 2. It becomes possible to carry out plating that is excellent in uniform electrodeposition.
Therefore, it can be seen from this figure that the present invention also provides a plating solution for trivalent chromium plating which is excellent in throwing power and uniform electrodeposition.
The examination results will be described in detail below on this point.

(評価1:浴温1)
表1に示した配合内容となるようにめっき液を調製した。
即ち、硫酸クロムを含み、Cr3+イオンの濃度が1mol/Lのめっき液を調製した。
該めっき液には、それぞれ0.5mol/Lの濃度となるように蟻酸と尿素とを添加した。
また、めっき液はpHが1.5となるように調製した。
(Evaluation 1: Bath temperature 1)
The plating solution was prepared to have the contents of the formulation shown in Table 1.
That is, a plating solution containing chromium sulfate and having a concentration of Cr 3+ ion of 1 mol / L was prepared.
Formic acid and urea were added to the plating solution to a concentration of 0.5 mol / L, respectively.
The plating solution was prepared to have a pH of 1.5.

上記のめっき液を用いて5Aの電流値でハルセル試験を実施した。
なお、試験は浴温を30℃、35℃、40℃の3通りで実施し、試験時間は10分間とした。
結果を図3、表1に併せて示す。
A Hull cell test was conducted at a current value of 5 A using the above plating solution.
The tests were conducted at three bath temperatures of 30 ° C., 35 ° C. and 40 ° C., and the test time was 10 minutes.
The results are shown in FIG.

また、試験後の試料のめっき厚さを蛍光X線型膜厚測定器にて測定した。
その結果を図4に示す。
この表1や図4に示した結果からは、Cr3+イオンの濃度が1mol/L以下であることで電流密度が低い状態でも一定以上のめっき厚さを確保できることがわかった。
また、表1、図4に示した結果からは、浴温を40℃未満とすることが付きまわり性に優れた3価クロムめっきを行う上で有利であることが判明した。
Moreover, the plating thickness of the sample after the test was measured by a fluorescent X-ray type film thickness measuring device.
The results are shown in FIG.
From the results shown in Table 1 and FIG. 4, it was found that when the concentration of Cr 3+ ions is 1 mol / L or less, a plating thickness of a certain level or more can be ensured even in a low current density state.
Further, from the results shown in Table 1 and FIG. 4, it was found that setting the bath temperature to less than 40 ° C. is advantageous for performing trivalent chromium plating with excellent roundness.

(評価2:浴温2)
「評価1」の結果を受けて浴温をさらに細分化して24℃、26℃、28℃、30℃、32℃の5通りの浴温でハルセル試験を実施し、「評価1」と同様に試験結果を評価した。
結果を表2、図5、6に示す。
(Evaluation 2: Bath temperature 2)
Based on the results of "Evaluation 1", the bath temperature is further subdivided, and the Hull cell test is performed at 24 bath temperatures of 24 ° C, 26 ° C, 28 ° C, 30 ° C and 32 ° C. The test results were evaluated.
The results are shown in Table 2, FIGS.

この表や図からも、浴温が24℃から28℃の範囲では、各電流密度でのめっき被膜の析出をほぼ一定の速度にできることがわかる。
そして、浴温が24℃で最も付きまわり性の向上が認められ、低い浴温でめっきを行う方が好ましい結果が得られることがわかった。
そこで、さらに浴の温度を下げることも検討したが浴温を下げ過ぎると浴組成の一部が結晶化してめっき表面にざらつきが発生したり、浴粘度が高くなってカソードにおいて水素が除去しにくくなると認められたことから浴温は24℃〜28℃の範囲内が最適であると判断した。
なお、24℃〜28℃の浴温を採用することで電流密度が低い場合でも良好なめっきが可能となる傾向は、別途実施したベントカソード試験においても確認できた。
It can also be understood from this table and figures that, in the bath temperature range of 24 ° C. to 28 ° C., the deposition of the plated film at each current density can be made to have a substantially constant speed.
Further, it was found that the improvement of the throwing power was most observed at a bath temperature of 24 ° C., and it was found that it was better to perform plating at a lower bath temperature.
Therefore, it was also considered to lower the temperature of the bath, but if the temperature of the bath is lowered too much, part of the bath composition crystallizes to cause roughness on the plating surface, and the bath viscosity increases to make it difficult to remove hydrogen at the cathode. The bath temperature was judged to be optimum in the range of 24 ° C. to 28 ° C. because it was recognized.
In addition, by adopting a bath temperature of 24 ° C. to 28 ° C., the tendency for good plating to be possible even when the current density is low was confirmed also in the separately conducted bent cathode test.

(評価3:浴濃度)
浴粘度の低下や浴液結晶化を抑制して付きまわり性の向上を図るべく、浴組成自体の濃度を下げてハルセル試験を実施した。
具体的には、浴組成を4/5(Cr3+イオンの濃度0.8mol/L、蟻酸及び尿素各々0.4mol/L)、3/5(Cr3+イオンの濃度0.6mol/L、蟻酸及び尿素各々0.3mol/L)、1/2(Cr3+イオンの濃度0.5mol/L、蟻酸及び尿素各々0.25mol/L)とし浴温度25℃でハルセル試験を実施した。
結果を表3、及び、図7に示す。
この表3や図7からも明らかなように、この「評価3」では浴濃度が低い方が良好なめっき被膜が得られることがわかった。
なお、成分を0.5倍としためっき液で最も良い結果が得られることは、別途実施したベントカソード試験においても確認できた。
(Evaluation 3: Bath concentration)
The Hull cell test was conducted by lowering the concentration of the bath composition itself in order to suppress the reduction of the bath viscosity and the crystallization of the bath liquid to improve the throwing power.
Specifically, the bath composition 4/5 (concentration 0.8 mol / L of Cr 3+ ions, formic acid and urea, respectively 0.4mol / L), 3/5 ( concentration of Cr 3+ ion 0.6 mol / L formic acid The Hull cell test was carried out at a bath temperature of 25 ° C. with each of 0.3 mol / L of urea and urea (0.5 mol / L of Cr 3+ ion concentration, 0.25 mol / L of formic acid and urea each).
The results are shown in Table 3 and FIG.
As apparent from Table 3 and FIG. 7, it was found that in this “Evaluation 3”, a better plating film can be obtained when the bath concentration is low.
In addition, it has been confirmed also in the separately conducted bent cathode test that the best result is obtained with the plating solution in which the component is 0.5 times.

(評価4:蟻酸及び尿素の添加量1)
「評価3」の結果を受け、浴濃度の更なる低下を試みた。
具体的には、浴組成を1/4、並びに、1/10としてハルセル試験を実施した。
その結果、付きまわり性はさらに改善されたがめっきの異常析出が見られる結果となった。
そのため、クロムイオン濃度は1/4(0.25mol/L)、1/10(0.1mol/L)としながら、蟻酸や尿素は当初の濃度(0.5mol/L)に戻した。
その結果、表4や図8に示すように異常析出は無くなったが、付きまわり性が低下する結果となった。
(Evaluation 4: Addition amount of formic acid and urea 1)
Based on the results of "Evaluation 3", a further reduction of the bath concentration was tried.
Specifically, the Hull cell test was performed with a bath composition of 1/4 and 1/10.
As a result, coverage was further improved, but abnormal deposition of plating was observed.
Therefore, formic acid and urea were returned to the initial concentration (0.5 mol / L) while the chromium ion concentration was set to 1/4 (0.25 mol / L) and 1/10 (0.1 mol / L).
As a result, as shown in Table 4 and FIG. 8, although abnormal deposition was eliminated, the result was a reduction in the throwing power.

(評価5:蟻酸及び尿素の添加量2)
「評価4」の結果を受け、蟻酸、尿素の変量により異常析出の改善を試みた。
ハルセル試験の結果(表5、図9参照)、蟻酸の濃度を0.1mol/Lと低く、尿素を当初の濃度(0.5mol/L)とすることで付きまわり性が良好で異常析出が抑制されることがわかった。
(Evaluation 5: Addition amount of formic acid and urea 2)
Based on the results of “Evaluation 4”, we tried to improve the abnormal deposition by using formic acid and urea.
As a result of the Hull cell test (see Table 5 and FIG. 9), the concentration of formic acid is as low as 0.1 mol / L, and the urea has an initial concentration (0.5 mol / L). It turned out that it is suppressed.

次いで、尿素の濃度を0.5mol/Lに固定とし、蟻酸の濃度を0.1mol/Lから0.22mol/Lへと変化させて付きまわり性が改善するか確認した。
結果を表6、図10に示す。
Next, the concentration of urea was fixed at 0.5 mol / L, and the concentration of formic acid was changed from 0.1 mol / L to 0.22 mol / L to confirm whether the throwing power was improved.
The results are shown in Table 6 and FIG.

この表や図からは、蟻酸の濃度が0.2mol/L以下で良好な結果が得られることがわかった。   From this table and figures, it was found that good results were obtained when the concentration of formic acid was 0.2 mol / L or less.

また、さらに蟻酸を低濃度にして付きまわり性について評価を行った。
その結果を表7、図11に示す。
In addition, formic acid was further reduced to evaluate its throwing power.
The results are shown in Table 7 and FIG.

この表や図からは、蟻酸の濃度が0.05mol/L以上で良好な結果が得られることがわかった。
短冊状の金属板を折り曲げて側面視“コの字状”となる凹入部を備えたカソードを用い、表6、7に示した条件と同じ条件でベントカソード試験を実施したところ、蟻酸の濃度が0.05mol/L以上0.1mol/L以下の範囲では凹入部においても6割以上の範囲にめっきが施されていることが確認できた。
From these tables and figures, it was found that good results were obtained when the concentration of formic acid was 0.05 mol / L or more.
The bent cathode test was conducted under the same conditions as shown in Tables 6 and 7 using a cathode provided with a recessed portion in which a strip-like metal plate is bent to make a side view “C” shape, and the concentration of formic acid It was confirmed that in the range of 0.05 mol / L or more and 0.1 mol / L or less, plating was applied in the range of 60% or more also in the recessed portion.

以上のように硫酸クロムを含む3価クロムめっき用のめっき液では、Cr3+イオンの濃度が0.1mol/L以上1mol/L以下の範囲とし、蟻酸の濃度を0.05mol/L以上0.2mol/L以下とすることで良好な付きまわり性を示すことが確認できた。
また、同めっき液は、Cr3+イオンの濃度が0.1mol/L〜0.3mol/Lの範囲で特に良好な付きまわり性を示すことが確認できた。
さらに、上記の評価からは、めっき浴での浴温を20℃以上40℃未満とすることが有効であることが確認できた。
このようなことからも本発明によれば付きまわり性に優れた3価クロムめっき用のめっき液が提供され、環境に優しいめっき製品の適用範囲が拡大され得ることがわかる。
As described above, in the plating solution for trivalent chromium plating containing chromium sulfate, the concentration of Cr 3+ ions is in the range of 0.1 mol / L to 1 mol / L, and the concentration of formic acid is 0.05 mol / L or more. It has been confirmed that by setting the concentration to 2 mol / L or less, a good throwing power is exhibited.
Moreover, it has been confirmed that the same plating solution exhibits particularly good throwing power when the concentration of Cr 3+ ions is in the range of 0.1 mol / L to 0.3 mol / L.
Furthermore, from the above evaluation, it was confirmed that it is effective to set the bath temperature in the plating bath to 20 ° C. or more and less than 40 ° C.
From these facts, it is understood that according to the present invention, a plating solution for trivalent chromium plating having excellent coverage is provided, and the application range of the environment-friendly plating product can be expanded.

Claims (3)

3価クロムめっきに用いられるめっき液であって、
硫酸クロムと蟻酸と尿素とを含み、Cr3+イオンの濃度が0.1mol/L以上1mol/L以下で、前記蟻酸の濃度が0.05mol/L以上0.2mol/L以下で、前記尿素の濃度が0.1mol/L以上1mol/L以下である、めっき液。
Plating solution used for trivalent chromium plating,
Containing chromium sulfate, formic acid and urea, and having a Cr 3+ ion concentration of 0.1 mol / L to 1 mol / L, and a formic acid concentration of 0.05 mol / L to 0.2 mol / L, of the urea The plating solution whose density | concentration is 0.1 mol / L or more and 1 mol / L or less .
めっき厚さが5μm以上の3価クロムめっきに用いられる請求項1記載のめっき液。   The plating solution according to claim 1, which is used for trivalent chromium plating having a plating thickness of 5 μm or more. 硫酸クロムを含むめっき液を収容しためっき浴で電気めっきを行うめっき工程を実施し、該めっき工程によって3価クロムめっきが施されためっき製品を作製するめっき製品の製造方法であって、
前記めっき工程では、
前記めっき液として、前記硫酸クロムと蟻酸と尿素とを含み、Cr3+イオンの濃度が0.1mol/L以上1mol/L以下で、前記蟻酸の濃度が0.05mol/L以上0.2mol/L以下で、前記尿素の濃度が0.1mol/L以上1mol/L以下である、めっき液を用い、
前記めっき浴での浴温を20℃以上40℃未満とし、且つ、
前記電気めっきでの電流密度を2A/dm以上20A/dm以下とするめっき製品の製造方法。
A method of producing a plated product, comprising performing a plating step of performing electroplating in a plating bath containing a plating solution containing chromium sulfate, and producing a plated product to which trivalent chromium plating has been applied by the plating step,
In the plating step,
The plating solution contains chromium sulfate, formic acid and urea, and the concentration of Cr 3+ ions is 0.1 mol / L to 1 mol / L, and the concentration of formic acid is 0.05 mol / L to 0.2 mol / L. In the following, using a plating solution in which the concentration of the urea is 0.1 mol / L or more and 1 mol / L or less
The bath temperature in the plating bath is 20 ° C. or more and less than 40 ° C., and
The manufacturing method of the metal-plating products which make the current density in the said electroplating 2 or more 2 dm < 2 > or more and 20 A / dm < 2 > or less.
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