JP6529273B2 - Substrate processing equipment - Google Patents

Description

  The present invention relates to a substrate processing apparatus that processes a substrate using a processing liquid. Examples of substrates to be processed include semiconductor wafers, substrates for liquid crystal displays, substrates for plasma displays, substrates for FED (Field Emission Display), substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, photomasks Substrates, ceramic substrates, substrates for solar cells, and the like.

In the manufacturing process of a semiconductor device or a liquid crystal display device, a cleaning process for removing foreign matter such as particles from the surface of a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display panel is indispensable.
For example, in a single-wafer substrate processing apparatus that processes substrates one by one, a spin chuck that rotates a substrate while holding the substrate substantially horizontally with a plurality of chuck pins, and a substrate that is rotated by the spin chuck And a nozzle for supplying the processing solution to the surface of the

  During processing of the substrate, the spin chuck rotates the substrate. Then, the cleaning solution is supplied from the nozzle to the surface of the rotating substrate. The cleaning chemical solution supplied onto the surface of the substrate receives centrifugal force due to the rotation of the substrate and flows on the surface of the substrate toward the periphery. As a result, the cleaning solution spreads over the entire surface of the substrate, and the surface of the substrate is cleaned. After the supply of the cleaning chemical solution, a rinse process is performed to wash away the cleaning chemical solution adhering to the substrate with a rinse solution. That is, the rinse liquid is supplied from the nozzle to the surface of the substrate being rotated by the spin chuck, and the pure water is spread by receiving the centrifugal force due to the rotation of the substrate, whereby the cleaning solution adhering to the surface of the substrate is removed. It is washed away.

JP-A-8-78368

The inventors of the present application have found that the removal moment for removing the particles adhering to the surface from the surface of the substrate is the first fluid (cleaning chemical solution or rinse liquid) in the vicinity of the surface (main surface) of the substrate W. It was found to be dependent on the lateral flow rate.
Therefore, an object of the present invention is to provide a substrate processing apparatus capable of accelerating the flow velocity of the first fluid on the main surface of the substrate, and thus capable of satisfactorily removing foreign substances such as particles adhering to the main surface of the substrate. To provide.

In order to achieve the above object, the invention according to claim 1 is a substrate processing apparatus for performing processing on a substrate using a processing fluid containing a first fluid and a second fluid ,
A substrate holding means for holding a substrate, a first cylindrical body in which a columnar first channel for flowing a first fluid is formed therein, and a first cylinder surrounding the first cylindrical body And a second cylindrical body for partitioning an annular second flow passage through which fluid flows between the first cylindrical body and the second cylindrical body, and a tip end of the first cylindrical body A nozzle that defines an annular first discharge port for discharging fluid flowing in the first flow path radially along the main surface of the substrate between the edge and the main surface of the substrate; A nozzle holding means for holding the nozzle in a state in which the tip end edge of the first cylinder faces the main surface of the substrate with a gap, and the first flow path of the nozzle a first fluid supply means for supplying a fluid, and a second fluid supply means for supplying the second fluid to the second flow path of the nozzle, before In the second cylindrical body, the fluid flowing in the second flow path is radially emitted along the main surface of the substrate on the side away from the main surface of the substrate with respect to the first discharge port. second outlet port of the annular discharging are opened, the distal portion of the first cylindrical body comprises a trumpet-shaped portion extending toward the main surface of the substrate, the inner wall of the trumpet-shaped portion wrapper The substrate processing apparatus has a convexly curved wall which spreads like a shape, and an outer wall of the trumpet shaped part has a concavely curved wall which spreads like a trumpet .

  According to this configuration, the tip end portion of the first cylindrical body includes an enlarged-diameter inner wall that expands in diameter away from the normal as it approaches the main surface of the substrate. Therefore, in the process of flowing the first fluid toward the first discharge port through the first flow path, a flow in the direction along the main surface of the substrate is formed. Therefore, the flow velocity of the first fluid discharged from the first discharge port can be increased. Thus, the flow velocity of the first fluid on the main surface of the substrate can be increased, and therefore, foreign matter such as particles attached to the main surface of the substrate can be favorably removed.

In addition , since the enlarged inner wall includes a convex curved wall that spreads like a trumpet, turbulence does not occur in the flow of the first fluid from the first flow path to the first discharge port, and hence the first discharge The first fluid can be smoothly guided toward the outlet.
In addition, the second fluid is discharged radially along the main surface of the substrate from the annular second discharge port formed in the direction away from the main surface of the substrate than the first discharge port. The second fluid discharged from the second discharge port covers the first fluid discharged from the first discharge port in the direction away from the main surface of the substrate. A second fluid flow is formed on the side away from the main surface of the substrate as viewed from the first fluid. Therefore, the first fluid discharged from the first discharge port can be prevented from flowing in the direction away from the main surface of the substrate. Thereby, the first fluid can be circulated along the main surface of the substrate.
In addition, since the tip end portion of the first cylindrical body includes a trumpet-shaped portion that spreads toward the main surface of the substrate, the downstream end portion of the second flow path is configured by a trumpet-shaped concave curved wall. Therefore, in the process of flowing the second fluid toward the second outlet through the second flow path, a flow in the direction along the main surface of the substrate is formed. In addition, since the concave curved wall has a trumpet shape, turbulence does not occur in the flow of the second fluid from the second flow passage to the second discharge port, whereby the second discharge port The second fluid can be smoothly guided toward the

The invention described in 請 Motomeko 2, wherein the leading edge of the first cylindrical body comprises a flat portion extending along the major surface of the substrate, a substrate processing apparatus according to claim 1.
According to this configuration, the flat portion provided at the tip end edge of the first cylinder extends along the main surface of the substrate. The flat portion guides the first fluid discharged from the first discharge port in the direction along the main surface of the substrate. Therefore, the flow velocity of the first fluid discharged from the first discharge port in the direction along the main surface of the substrate can be further speeded up, and hence foreign substances such as particles attached to the main surface of the substrate can be favorably obtained. It can be removed.

The invention according to claim 3 is the substrate processing apparatus according to claim 1 or 2 , wherein the first fluid flowing through the first flow path is a liquid.
According to this configuration, the annular first discharge port formed between the main surface of the substrate and the tip end edge of the nozzle (the tip end edge of the first cylinder) radially along the main surface of the substrate The liquid is discharged. By setting the flow rate of the liquid discharged from the first discharge port to an appropriate amount, it is possible to provide a very minute gap between the tip edge of the nozzle and the main surface of the substrate. That is, the opening width in the normal direction in the annular first discharge port can be provided to be extremely small. Therefore, the flow velocity of the liquid discharged from the first discharge port can be increased, and thus, foreign substances such as particles attached to the main surface of the substrate can be favorably removed.

The invention according to claim 4 is characterized in that the second discharge port is divided between the leading end edge of the second cylindrical body and the leading end portion of the first cylindrical body . 3 is the substrate processing apparatus according to any one of the items 1 to 3 .
According to this configuration, the annular second discharge port can be partitioned and formed by the distal end edge of the second cylindrical body and the distal end portion of the first cylindrical body. Thus, the annular second discharge port can be provided with a simple configuration.

In the invention described in claim 5 , the first fluid flowing through the first flow passage is a treatment liquid , and the second fluid flowing through the second flow passage is the first fluid. The substrate processing apparatus according to any one of claims 1 to 4 , wherein the processing liquid is the same type of processing liquid as that described above.
According to this configuration, the processing liquid is radially discharged from the annular second discharge port formed in the direction away from the main surface of the substrate than the first discharge port. The processing liquid discharged from the second discharge port covers the processing liquid discharged from the first discharge port from the side away from the main surface of the substrate. A flow of the processing liquid discharged from the second discharge port is formed in the direction away from the main surface of the substrate as viewed from the processing liquid discharged from the first discharge port. Therefore, the processing liquid discharged from the first discharge port can be prevented from flowing in the direction away from the main surface of the substrate. Thus, the processing liquid discharged from the first discharge port can be distributed along the main surface of the substrate.

  In addition, when the opening width of the first discharge port is a minute width, the processing liquid discharged from the first discharge port is sprayed with a strong discharge pressure and scattered around, causing the generation of particles. May be However, since the processing liquid discharged from the first discharge port is covered by the processing liquid discharged from the second discharge port, scattering of the processing liquid discharged from the first discharge port can be suppressed or prevented.

In the invention according to claim 6 , the first fluid flowing through the first flow passage is a first liquid, and the second fluid flowing through the second flow passage is the first fluid. The substrate processing apparatus according to any one of claims 1 to 4 , wherein the second liquid is a liquid different in type from the second liquid.
According to this configuration, the second liquid is discharged radially from the second discharge port formed in the direction away from the main surface of the substrate than the first discharge port. When the opening width of the first discharge port is extremely small, the first liquid discharged from the first discharge port is jetted with a strong discharge pressure and scattered around, resulting in generation of particles. It may be the cause. However, since the first liquid is covered by the second liquid, scattering of the first liquid discharged from the first discharge port can be suppressed or prevented.

Invention of claim 7, wherein the first fluid flowing through said first flow path is a gas, the second fluid flowing through the second flow path is a liquid, according to claim 1 It is the substrate processing apparatus as described in any one of -4 .
According to this configuration, high-speed gas is sprayed along the main surface of the substrate to the liquid discharged from the second discharge port. Thereby, the liquid and the gas collide with each other immediately before the liquid is deposited on the upper surface of the substrate, and a liquid droplet is formed. Droplets of the formed liquid are supplied to the main surface of the substrate. It is formed. The droplets are supplied as jets to the main surface of the substrate. The kinetic energy of the liquid droplet can physically remove foreign matter from the main surface of the substrate.

It is the figure which looked at the substrate processing apparatus which concerns on the 1st Embodiment of this invention horizontally. It is a figure which illustrates the structure of the nozzle holding | maintenance unit with which the said substrate processing apparatus was equipped, and a nozzle. It is sectional drawing which shows the structure of the 1st cylinder contained in the said nozzle graphically. It is sectional drawing which expands and shows the said nozzle of the state which is discharging the process liquid. It is a figure which shows typically the relationship between the removal moment and the horizontal flow velocity of a process liquid. It is a graph which shows the relationship between the opening width of a lower discharge port, and the discharge speed of the horizontal direction from a lower discharge port. It is a flowchart for demonstrating the process example of the cleaning process performed by the said substrate processing apparatus. It is a flowchart for demonstrating the process example of the cleaning process performed by the said substrate processing apparatus. It is sectional drawing which shows the 1st modification of a said 1st cylinder. It is sectional drawing which shows the 2nd modification of a said 1st cylinder. It is sectional drawing which shows the 3rd modification of a said 1st cylinder. It is sectional drawing which shows the 4th modification of a said 1st cylinder. It is sectional drawing which shows the 5th modification of a said 1st cylinder. It is sectional drawing which expands and shows the nozzle contained in the substrate processing apparatus which concerns on the 2nd Embodiment of this invention. It is sectional drawing which expands and shows the nozzle contained in the substrate processing apparatus which concerns on the 3rd Embodiment of this invention. It is sectional drawing which expands and shows the nozzle contained in the substrate processing apparatus which concerns on the 4th Embodiment of this invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings.
FIG. 1 is a horizontal view of a substrate processing apparatus 1 according to a first embodiment of the present invention.
The substrate processing apparatus 1 is a sheet-fed apparatus for performing chemical processing (cleaning processing, etching processing, and the like) using a processing liquid on the surface of the substrate W such as a circular semiconductor wafer on the device formation region side. . The substrate processing apparatus 1 holds a box-shaped chamber 2 having an internal space and a single substrate W in the chamber 2 in a horizontal posture, and the substrate W around the vertical rotation axis A1 passing through the center of the substrate W A spin chuck (substrate holding means) 3 for rotating the nozzle, a nozzle 4 for discharging the processing liquid on the upper surface of the substrate W held by the spin chuck 3, and a processing fluid for supplying the processing liquid to the nozzle 4 It includes a supply unit 5, a cylindrical processing cup 6 surrounding the spin chuck 3, and a controller 7 for controlling the operation of the apparatus provided in the substrate processing apparatus 1 and the opening and closing of the valve.

The chamber 2 includes a box-like partition 8, an FFU (fan filter unit) 9 as a blower unit for sending clean air from the upper part of the partition 8 into the partition 8 (corresponding to the inside of the chamber 2), and a lower part of the partition 8 And an exhaust device 10 for exhausting the gas in the chamber 2. The spin chuck 3 and the nozzle 4 are accommodated in the partition wall 8.
The FFU 9 is disposed above the partition 8 and is attached to the ceiling of the partition 8. The FFU 9 sends clean air from the ceiling of the partition 8 into the chamber 2. The exhaust device 10 is connected to the bottom of the processing cup 6 via an exhaust duct 11 connected to the inside of the processing cup 6, and sucks the inside of the processing cup 6 from the bottom of the processing cup 6. The FFU 9 and the exhaust system 10 form a downflow (downflow) in the chamber 2.

As the spin chuck 3, a holding type chuck is adopted which holds the substrate W horizontally by holding the substrate W in the horizontal direction. Specifically, the spin chuck 3 includes a spin motor (substrate rotating means) 12, a spin shaft 13 integrated with a drive shaft of the spin motor 12, and a circle attached substantially horizontally to the upper end of the spin shaft 13. And a plate-like spin base 14.
A plurality of (three or more, for example, six) clamping members 15 are arranged on the peripheral edge of the top surface of the spin base 14. The plurality of sandwiching members 15 are arranged at appropriate intervals on the circumference corresponding to the outer peripheral shape of the substrate W at the upper surface peripheral portion of the spin base 14.

Further, the spin chuck 3 is not limited to the sandwich type, and for example, the substrate W is held in a horizontal posture by vacuum suction of the back surface of the substrate W, and further rotation around the vertical rotation axis in that state. By doing this, a vacuum suction type (vacuum chuck) that rotates the substrate W held by the spin chuck 3 may be employed.
The nozzle 4 has a basic form as a scan nozzle capable of changing the supply position of the processing liquid on the upper surface of the substrate W. The nozzle 4 is attached to the tip of a nozzle arm (supporting member) 17 extending substantially horizontally above the spin chuck 3. The nozzle arm 17 is supported by an arm support shaft 18 extending substantially vertically on the side of the spin chuck 3. An arm swinging unit 19 constituted by a motor or the like is coupled to the arm support shaft 18. The arm swinging unit 19 can swing the nozzle arm 17 in a horizontal plane centering on a vertical swinging axis A2 set to the side of the spin chuck 3, thereby allowing the nozzle to move around the swinging axis A2. 4 can be turned. To the arm support shaft 18, an arm lifting unit 20 configured of a servo voter, a ball screw mechanism, and the like is coupled. The arm support shaft 18 can be moved up and down by the arm lifting unit 20 to move the nozzle arm 17 integrally with the arm support shaft 18. Thus, the nozzle 4 is held by the spin chuck 3 at a lower position where the lower end of the nozzle 4 opposes the upper surface of the substrate W held by the spin chuck 3 with a predetermined gap W2 (for example 5 mm, see FIG. 2). It can be raised and lowered between the upper position where it is largely retracted above the substrate W being held. Thus, the arm elevating unit 20 constitutes a contact / separation drive mechanism for causing the nozzle 4 to approach / separate from the substrate W.

The nozzle 4 is supported by the nozzle arm 17 via a nozzle holding unit (nozzle holding means) 16.
FIG. 2 is a view schematically showing the configuration of the nozzle holding unit 16 and the nozzle 4.
As shown in FIG. 2, a first process liquid pipe 52 connected to an inner cylinder 35 of the nozzle 4 described later bends from the upper end of the vertical pipe 21 extending in the vertical direction and the upper end of the vertical pipe 21. And a horizontal pipe portion 22 extending in the same direction. The connection portion 23 between the vertical piping portion 21 and the horizontal piping portion 22 penetrates the inside of the holder 24, whereby the first processing liquid piping 52 is fixed to the holder 24. The holder 24 has an upper surface 25. An air cylinder (first load applying means) 26 and a coil spring (second load applying means) 27 are interposed between the lower surface of the nozzle arm 17 and the upper surface 25 of the holder 24. In the first embodiment, the nozzle holding unit 16 includes a holder 24, an air cylinder 26 and a coil spring 27.

As shown in FIG. 2, the coil spring 27 is a tension coil spring. The upper end and the lower end of the coil spring 27 are fixed to the lower surface of the nozzle arm 17 and the upper surface 25 of the holder 24, respectively. The coil spring 27 pulls the nozzle 4 and the holder 24 upward. That is, the coil spring 27 applies an upward force (disengagement direction force) to the nozzle 4.
As shown in FIG. 2, the air cylinder 26 is a cylinder provided with an expandable and contractible portion 28. For example, a telescopic rod that can expand and contract in the longitudinal direction can be exemplified as the telescopic portion 28. The telescopic unit 28 is disposed in the vertical posture. An air supply pipe 30 is connected to the inside of the expansion and contraction unit 28 via an air supply valve 29. An air adjusting valve (load adjusting means) 31 for adjusting the degree of opening of the air supply pipe 30 is interposed in the air supply pipe 30. A leak pipe 33 is connected to the inside of the expansion and contraction portion 28 via a leak valve (load adjusting means) 32. The expanding and contracting portion 28 is expanded by introducing compressed air into the inside thereof, and shortened by removing the compressed air from the inside thereof. The vertical height (approximately the same as the vertical height of the air cylinder 26) of the telescopic portion 28 in the most shortened state of the telescopic portion 28 is set shorter than the length of the coil spring 27 in the state where the holder 24 is suspended by the coil spring 27 It is done. Therefore, the lower end portion of the stretchable portion 28 is not in contact with the upper surface 25 of the holder 24 in the fully shortened state of the stretchable portion 28. When the air supply valve 29 is opened while the leak valve 32 is closed in a state where the expansion and contraction part 28 is in the shortest state, compressed air is supplied to the inside of the expansion and contraction part 28 through the air supply piping 30. Thereby, the stretchable portion 28 stretches, and when the length of the stretchable portion 28 matches the length of the coil spring 27, the lower end portion of the stretchable portion 28 abuts on the upper surface 25 of the holder 24. By further continuing the supply of the compressed air, the expansion and contraction portion 28 further extends from the state against the spring force of the coil spring 27. That is, the holder 24 is lowered by the lower end portion of the expandable portion 28 pressing the holder 24 downward. Thereby, the distance between the lower surface of the nozzle arm 17 and the upper surface 25 of the holder 24 is enlarged.

When the leak valve 32 is opened in the extended state of the expandable part 28, compressed air is removed from the inside of the expandable part 28, and along with this, the expandable part 28 is shortened and returned to the full reduction state.
Further, the periphery of the stretchable portion 28 is surrounded by a bellows 34 formed of a resin material having chemical resistance. The bellows 34 expands and contracts in accordance with the increase and decrease of the distance between the lower surface of the nozzle arm 17 and the upper surface 25 of the holder 24.

FIG. 3 is a cross-sectional view schematically showing the configuration of the inner cylinder 35 included in the nozzle 4. FIG. 4 is an enlarged cross-sectional view of the nozzle 4 in a state of discharging the treatment liquid. The configuration of the nozzle 4 will be described with reference to FIGS. 2 and 4. FIG. 3 will be described as appropriate.
The nozzle 4 has an inner cylinder (first cylinder) 35 and an outer cylinder (second cylinder) 36 which is fitted around the inner cylinder 35 and surrounds the inner cylinder 35. The inner cylinder 35 and the outer cylinder 36 are coaxially disposed on a common vertical axis A3. As shown in FIG. 3, the inner cylinder 35 has a cylindrical shape except for the lower end portion (tip portion) 37. The lower end portion 37 of the inner cylinder 35 includes a trumpet shaped portion 38 which spreads downward. In other words, the lower end portion 37 of the inner cylinder 35 includes the convexly curved wall 41 which spreads in a trumpet shape downward. Furthermore, in other words, the lower end portion 37 of the inner cylinder 35 includes an enlarged inner wall whose diameter is increased to be separated from the vertical axis A3 as it goes downward. The peripheral portion (tip edge) 39 of the trumpet shaped portion 38 includes a flat portion (flat portion) 40 extending along the horizontal direction. The peripheral edge 39 of the trumpet shaped portion 38 projects outward in the radial direction from the outer cylinder 36 in a plan view. The internal space of the inner cylinder 35 is a linear first flow path 42 through which the processing liquid from the first processing liquid pipe 52 described later flows.

  As shown in FIGS. 2 and 4, the outer cylinder 36 includes a cylindrical portion 43 and a closing portion 44 closing the upper end of the cylindrical portion 43. The outer periphery of the inner cylinder 35 and the inner periphery of the closing portion 44 are sealed in a fluid tight manner by a seal member (not shown). Between the inner cylinder 35 and the cylindrical portion 43 of the outer cylinder 36, a cylindrical second flow passage 45 through which the treatment liquid from the second treatment liquid piping 57 described later flows is formed. The inner cylinder 35 and the outer cylinder 36 are respectively vinyl chloride, PCTFE (polychlorotrifluoroethylene), PVDF (polyvinylidene fluoride), PTFE (polytetrafluoroethylene), PFA (perfluoro-alkylvinyl-ether-tetrafluoro-ethlene-copolymer) And other resin materials.

As shown in FIG. 2 and FIG. 4, the lower end portion of the outer cylinder 36 has an annular upper discharge port (second end portion) by the lower end edge 47 (tip end edge) of the outer cylinder 36 and the lower end portion 37 of the inner cylinder 35. The discharge port) 48 is divided. The upper discharge port 48 is a horizontal discharge port, and discharges the processing liquid flowing in the second flow path 45 radially in the horizontal direction.
Since the lower end portion 37 of the inner cylinder 35 includes the trumpet-shaped portion 38 expanding toward the upper surface of the substrate W, the downstream end portion of the second flow path 45 is constituted by the trumpet-shaped concave curved wall 62. Therefore, in the process of flowing the processing liquid toward the upper discharge port 48 through the second flow path 45, a horizontal flow is formed. In addition, since the concave curved wall 62 has a trumpet shape, no turbulent flow is generated in the flow of the processing liquid from the second flow path 45 to the upper discharge port 48, whereby the flow toward the upper discharge port 48 occurs. Can guide the processing solution smoothly.

Further, when the processing liquid flows toward the upper discharge port 48 toward the second flow path 45, the processing liquid presses the trumpet shaped portion 38 downward. That is, a downward force (approaching direction force) acts on the nozzle 4 by the treatment liquid flowing through the second flow path 45.
When the substrate processing apparatus 1 processes the substrate W, the nozzle 4 is disposed at the lower position by swinging and raising and lowering the nozzle arm 17. In this state, the treatment liquid is discharged from the trumpet shaped portion 38 of the nozzle 4. In this state, when the nozzle 4 is lowered to the close position further below the lower position, as shown in FIG. 4, between the peripheral portion 39 of the trumpet shaped portion 38 and the upper surface of the substrate W, An annular lower discharge port (first discharge port) 49 is defined.

  As shown in FIGS. 2 and 4, the lower discharge port 49 discharges the processing liquid flowing in the first flow path 42 radially in the horizontal direction. The vertical height position of the nozzle 4 circulates a downward force (a downward force by its own weight such as the nozzle 4 and the holder 24, a downward force by the air cylinder 26, and a second flow path 45 described later) And the upward force (the upward force by the tension of the coil spring 27 and the upward force by the discharge of the first fluid from the lower discharge port 49). Is held in a balanced position. In this case, the flow rate of the processing liquid discharged from the lower discharge port 49 and the flow rate of the compressed air to the air cylinder 26 so that the distance between the lower end edge of the nozzle 4 and the upper surface of the substrate W becomes extremely small. Is set respectively. Therefore, the opening width W3 (hereinafter simply referred to as "opening width") in the vertical direction at the annular lower discharge port 49 is provided to be extremely small.

  A downward load is applied to the nozzle 4 from the air cylinder 26 included in the nozzle holding unit 16, and an upward load is applied from the coil spring 27 included in the nozzle holding unit 16. Then, the size of the downward load applied from the air cylinder 26 to the nozzle 4 is adjusted by the expandable portion 28 included in the air cylinder 26. Thereby, the opening width W3 of the lower discharge port 49 can be adjusted with high accuracy.

  Further, the opening width W3 of the lower discharge port 49 can be adjusted by adjusting the magnitude of the load applied from the air cylinder 26 to the nozzle 4. Therefore, in order to adjust the opening width W3 of the lower discharge port 49, the flow rate of the processing liquid discharged from the nozzle 4 is not restricted. Therefore, the flow rate of the treatment liquid discharged from the nozzle 4 can be suppressed to a small flow rate, and in this case, the treatment liquid can be saved.

  As shown in FIG. 1, the processing fluid supply unit 5 includes a first processing liquid supply unit (first fluid supply means) 50 for supplying the processing liquid to the first flow path 42 of the nozzle 4, and the nozzle And a second processing liquid supply unit (second fluid supply means) 51 for supplying the processing liquid to the second flow path 45 of four. In this embodiment, SC1 (ammonia-hydrogen peroxide mixture) as an example of a chemical solution (cleaning chemical solution) and a rinse solution are used as the treatment solution. The first processing liquid supply unit 50 supplies a first processing liquid pipe 52 for supplying the processing liquid to the first flow path 42 (see FIG. 2) of the nozzle 4 and the chemical solution (SC1) from the chemical solution supply source. The first chemical liquid pipe 53 supplied to the first processing liquid pipe 52, the first chemical liquid valve 54 for opening and closing the first chemical liquid pipe 53, and the rinse liquid from the rinse liquid supply source And a first rinse liquid valve 56 for opening and closing the first rinse liquid piping 55.

  The second processing liquid supply unit 51 supplies a second processing liquid pipe 57 that supplies the processing liquid to the first flow path 42 to the second flow path 45, and supplies the chemical solution (SC1) from the chemical liquid supply source. The second chemical liquid pipe 58, the second chemical liquid valve 59 for opening and closing the second chemical liquid pipe 58, and the second flow path 45, the rinse liquid from the rinse liquid supply source to the second processing liquid pipe 57 It includes a second rinse liquid pipe 60 to be supplied, and a second rinse liquid valve 61 for opening and closing the second rinse liquid pipe 60.

As the rinse solution, DIW (deionized water), carbonated water, electrolytic ion water, ozone water, hydrochloric acid water of diluted concentration (for example, about 10 to 100 ppm), reduced water (hydrogen water), degassed water or the like can be used.
With the first rinse solution valve 56 and the second rinse solution valve 61 closed, the first chemical solution valve 54 and the second chemical solution valve 59 are opened, so that the first flow passage 42 of the nozzle 4 is opened. The chemical solution (SC1) is supplied to both the second flow path 45 and the second flow path 45. Thus, the chemical solution (SC1) can be simultaneously discharged from both the lower discharge port 49 and the upper discharge port 48.

Further, with the first chemical solution valve 54 and the second chemical solution valve 59 closed, the first rinse solution valve 56 and the second rinse solution valve 61 are opened, whereby the first flow of the nozzle 4 The rinse liquid is supplied to both the passage 42 and the second flow passage 45. Thereby, the rinse liquid can be simultaneously discharged from both the lower discharge port 49 and the upper discharge port 48.
As shown in FIG. 1, the processing cup 6 is disposed outward (in a direction away from the rotation axis A <b> 1) than the substrate W held by the spin chuck 3. The processing cup 6 surrounds the spin base 14. When the processing liquid is supplied to the substrate W while the spin chuck 3 is rotating the substrate W, the processing liquid supplied to the substrate W is shaken off around the substrate W. When the processing liquid is supplied to the substrate W, the upper end 6 a of the processing cup 6 opened upward is disposed above the spin base 14. Therefore, the processing liquid such as a chemical solution or water discharged around the substrate W is received by the processing cup 6. Then, the treatment liquid received by the treatment cup 6 is sent to a recovery device or a waste liquid device (not shown).

FIG. 5 is a view schematically showing the relationship between the removal moment and the flow velocity of the treatment liquid in the lateral direction.
The inventors have, the removal moment M _R for removing particles P adhered to the upper surface of the substrate W, lateral forces acting on the particles P (hereinafter, referred to as "particle removing force F _D") depends on the I found what I was doing. Case of supplying the processing liquid (e.g., wash liquor) to the upper surface of the substrate W, the particle removing force F _D is the depends on the flow rate of the treatment liquid flowing in the vicinity of the particle P present inventors consider.

The particle removal force F _D can be expressed by the following equation (1).
F _D = 32 · μ / ρ · (r / v) ² · 2τ / ρ formula (1)
(Where, in the formula (1), μ represents the viscosity of the treatment liquid, ρ represents the density of the treatment liquid, r represents the radius of the particle P, v represents the kinematic viscosity of the treatment liquid, and τ is Indicates the lateral flow rate of the treatment solution.)
The particles P adhere to the vicinity of the surface of the substrate W. That is, removal moment M _R can be considered to be dependent on the transverse flow rate of the processing solution near the surface of the substrate W tau.

FIG. 6 is a graph showing the relationship between the opening width W 3 of the lower discharge port 49 and the discharge speed in the horizontal direction from the lower discharge port 49.
Assuming that the radius of the annular lower discharge port 49, that is, the radius of the trumpet-like portion 38 (see FIG. 4) is R (see FIG. 4), the opening area S of the lower discharge port 49 is expressed by the following equation (2) Can.
S = 2 · · · · · · · · · · · (2)
In this case, assuming that the flow rate per unit time of the treatment liquid flowing through the first flow passage 42 is f (not shown), the flow velocity τ (not shown) of the treatment liquid at the lower discharge port 49 is given by It can be represented by).
τ = f / (2 · π · R · W3) formula (3)
That is, as the opening width W3 of the lower discharge port 49 is reduced, the flow velocity of the processing liquid at the lower discharge port 49 can be increased.

The following can be seen from FIG. 5 and FIG. When the lower discharge port 49 is set at an extremely minute interval, the processing liquid discharged from the lower discharge port 49 directly acts on the particles P. Then, the flow rate of the transverse process fluid under discharge port 49, i.e., by increasing the discharge rate of the treatment liquid from the lower discharge port 49, it is possible to improve the removal moment M _R acting on the particles P. Thereby, the particles P can be satisfactorily removed from the surface of the substrate W.

FIGS. 7 and 8 are flowcharts for explaining a processing example of the cleaning processing performed by the substrate processing apparatus 1.
Hereinafter, an example of the cleaning process will be described with reference to FIG. 1, FIG. 2, FIG. 4, FIG. 7, and FIG. In this cleaning process, SC1 is used as a chemical solution (cleaning chemical solution).
During the cleaning process, the uncleaned substrate W is carried into the chamber 2 (step S1). The substrate W is delivered to the spin chuck 3 with its surface (device formation surface) facing upward. Specifically, the controller 7 controls the hand of the substrate transfer robot (not shown) holding the substrate W in a state where the nozzle 4 is disposed at the retracted position retracted from above the spin chuck 3 (not shown) Into the interior of the chamber 2. Thereby, the substrate W is delivered to the spin chuck 3 with the main surface to be processed facing upward, and is held by the spin chuck 3 (substrate holding step).

After the substrate is held by the spin chuck 3, the control device 7 causes the spin motor 12 to start the rotation of the substrate W (step S2). The substrate W is raised to a predetermined liquid processing speed (for example, about 300 rpm) and maintained at the liquid processing speed.
When the substrate W reaches the liquid processing speed, next, the control device 7 controls the arm swing unit 19 to pull out the nozzle 4 from the retracted position above the substrate W (step S3).

After the nozzle 4 is disposed above the substrate W, the control device 7 then controls the arm lifting and lowering unit 20 to lower the nozzle 4 to the lower position (step S4).
When the nozzle 4 is disposed at the lower position, the control device 7 opens the first drug solution valve 54 and the second drug solution valve 59. Thereby, discharge of SC1 from the nozzle 4 is started (step S5), and SC1 is discharged from both the lower discharge port 49 and the upper discharge port 48 of the nozzle 4.

  Then, the controller 7 opens the air supply valve 29 to supply compressed air to the inside of the air cylinder 26. As a result, the expandable portion 28 expands, and as a result, the nozzle 4 further descends from the lower position. And, as shown in FIG. 4, the nozzle 4 has a downward force (a downward force by its own weight such as the nozzle 4 and the holder 24, a downward force by the air cylinder 26, and SC 1 flowing in the second flow path 45). The resultant force with the force for pressing down the trumpet shaped portion 38) and the upward force (upward force by pulling the coil spring 27 and upward force by the discharge of SC1 from the lower discharge port 49) are held in a balanced position Ru.

  The control device 7 controls the air adjusting valve 31 to supply the amount of compressed air supplied to the inside of the expansion and contraction portion 28 of the air cylinder 26 so that the opening width W3 of the annular lower discharge port 49 becomes extremely small. (Adjust the downward force acting on the nozzle 4). Since the opening width W3 is ensured by the discharge pressure of SC1 discharged from the lower discharge port 49, the distance (opening width W3) between the upper surface of the substrate W and the lower end surface of the nozzle 4 is minute, but is zero. It will never be. Since the peripheral edge portion 39 of the trumpet shaped portion 38 includes the flat plate shaped portion 40 extending along the horizontal direction, the SC 1 is discharged from the lower discharge port 49 in the horizontal direction.

  The opening width W3 of the lower discharge port 49 is extremely small. In addition, since the lower end portion 37 of the inner cylinder 35 includes an enlarged inner wall which is expanded to be separated from the vertical axis A3 as it goes downward, in the process of flowing from the first flow path 42 to the lower discharge port 49 , Lateral flow is formed. In addition, since the above-mentioned enlarged inner wall includes the convexly curved wall 41 which spreads like a trumpet, turbulence does not occur in the flow of SC1 from the first flow passage 42 to the lower discharge port 49, and therefore the lower discharge port We can guide SC1 smoothly to 49. Due to these, the flow velocity of SC1 discharged horizontally from the annular lower discharge port 49 of the nozzle 4 is extremely high. Therefore, foreign substances such as particles adhering to the upper surface of the substrate W can be removed more satisfactorily.

In addition, the flat plate-like portion 40 provided at the peripheral portion 39 of the trumpet-like portion 38 guides the SC 1 discharged from the lower discharge port 49 in the horizontal direction. Therefore, the flow velocity in the horizontal direction of SC1 discharged from the lower discharge port 49 can be further increased.
Further, SC 1 is radially discharged in the horizontal direction from the annular upper discharge port 48 disposed adjacent to the upper side of the lower discharge port 49. The SC1 discharged from the upper discharge port 48 covers the SC1 discharged from the lower discharge port 49 from the upper side, and the SC1 discharged from the upper discharge port 48 to the upper side of the SC1 discharged from the lower discharge port 49 Flow is formed. Therefore, SC1 discharged from the lower discharge port 49 is prevented from flowing upward. Thereby, SC1 discharged from the lower discharge port 49 can be circulated in the horizontal direction.

  In addition, when the opening width W3 of the lower discharge port 49 is extremely small, the SC1 discharged from the lower discharge port 49 may be jetted with a strong discharge pressure and scattered around to cause particle generation. There is. However, since the SC1 discharged from the lower discharge port 49 is covered by the SC1 discharged from the upper discharge port 48, the scattering of the SC1 discharged from the lower discharge port 49 can be prevented.

  Further, the control device 7 controls the arm swinging unit 19 to move the supply position of the SC 1 from the lower discharge port 49 on the upper surface of the substrate W between the central portion and the peripheral portion. The supply position of the SC 1 from the lower discharge port 49 can be scanned over the entire top surface of the substrate W. Thereby, particles can be satisfactorily removed from the entire top surface of the substrate W. The SC 1 supplied to the upper surface of the substrate W scatters from the peripheral portion of the substrate W toward the side of the substrate W.

  When a predetermined time period has elapsed from the start of discharge of SC1 from the nozzle 4, the control device 7 closes the first chemical solution valve 54 and the second chemical solution valve 59. Thereby, the discharge of SC1 from the nozzle 4 is stopped (step S7). Further, the control device 7 opens the first rinse liquid valve 56 and the second rinse liquid valve 61. As a result, the processing liquid discharged from the lower discharge port 49 and the upper discharge port 48 of the nozzle 4 is switched from the SC1 to the rinse liquid. That is, discharge of the rinse liquid from the nozzle 4 is started (step S8). As described above, the opening width W3 of the lower discharge port 49 is extremely small. Therefore, the flow rate of the rinse liquid discharged from the lower discharge port 49 of the nozzle 4 is extremely high. Therefore, in the vicinity of the lower discharge port 49, SC1 remaining on the upper surface of the substrate W can be washed out well from the upper surface of the substrate W.

  Further, the rinse liquid is discharged radially in the horizontal direction from the annular upper discharge port 48 disposed adjacent to the upper side of the lower discharge port 49. The rinse liquid discharged from the upper discharge port 48 covers the rinse liquid discharged from the lower discharge port 49 from the upper side, and is discharged from the upper discharge port 48 to the upper side of the rinse liquid discharged from the lower discharge port 49 The flow of rinse solution is formed. Therefore, the rinse liquid discharged from the lower discharge port 49 is prevented from flowing upward. Thereby, the rinse liquid discharged from the lower discharge port 49 can be circulated in the horizontal direction.

  In addition, when the opening width W3 of the lower discharge port 49 is extremely small, the rinse liquid discharged from the lower discharge port 49 is sprayed with a strong discharge pressure and scattered around, which causes particle generation. There is a fear. However, since the rinse liquid discharged from the lower discharge port 49 is covered by the rinse liquid discharged from the upper discharge port 48, scattering of the rinse liquid discharged from the lower discharge port 49 can be prevented.

  The control device 7 moves the supply position of the rinse liquid from the lower discharge port 49 on the upper surface of the substrate W between the central portion and the peripheral portion by controlling the arm swinging unit 19. The supply position of the rinse liquid from the discharge port 49 can scan the entire top surface of the substrate W. Thereby, particles can be satisfactorily removed from the entire top surface of the substrate W. The rinse liquid supplied to the upper surface of the substrate W is scattered from the peripheral portion of the substrate W toward the side of the substrate W.

  When a predetermined time period has elapsed from the start of discharging the rinse liquid from the nozzle 4, the control device 7 opens the leak valve 32 and removes the compressed air from the inside of the expansion and contraction portion 28 of the air cylinder 26. Thereby, the expansion-contraction part 28 is shortened and it resets to the full shortening state. Thus, the downward load applied to the nozzle 4 by the air cylinder 26 is released. The nozzle 4 receives the upward force applied from the coil spring 27 and is pulled up to the lower position (step S9). The action of the coil spring 27 enables the nozzle 4 to be pulled up favorably without providing any other lifting means. By pulling up the nozzle 4, the annular lower discharge port 49 formed between the peripheral portion 39 of the trumpet shaped portion 38 and the upper surface of the substrate W disappears.

Then, the controller 7 closes the first rinse liquid valve 56 and the second rinse liquid valve 61. As a result, the discharge of the rinse liquid from the lower discharge port 49 and the upper discharge port 48 is stopped (step S10).
Next, the control device 7 controls the arm raising and lowering unit 20 to raise the nozzle arm 17 (step S11). By the elevation of the nozzle arm 17, the nozzle 4 is largely elevated from the upper surface of the substrate W.

In addition, the control device swings the nozzle arm 17 to return the nozzle 4 to the retracted position on the side of the spin chuck 3 (step S12).
Further, the control device 7 controls the spin motor 12 to rotate the substrate W at a high rotational speed (for example, 1000 rpm or more). Thereby, the rinse liquid adhering to the upper surface of the substrate W is shaken off around the substrate W. Thus, the liquid is removed from the substrate W, and the upper surface of the substrate W is dried (S13: spin dry). When the spin dry process is performed for a predetermined period, the control device 7 controls the spin motor 12 to stop the rotation of the spin chuck 3 (the rotation of the substrate W) (step S14). As a result, the cleaning process for one substrate W is completed, and the transport robot removes the processed substrate W from the chamber 2 (step S15).

  As described above, according to the first embodiment, the processing liquid is discharged radially in the horizontal direction from the annular lower discharge port 49 formed between the upper surface of the substrate W and the lower end edge of the nozzle 4. In a state where downward force by the weight of the nozzle 4 and downward force by the air cylinder 26 act on the nozzle 4, these downward forces, upward force by tension of the coil spring 27, and the lower discharge port 49 It is held at a position where it balances with the upward force by the discharge of the treatment liquid.

  The flow rate of the processing liquid discharged from the lower discharge port 49 and the flow rate of the compressed air to the air cylinder 26 are set so that the distance between the lower end edge of the nozzle 4 and the upper surface of the substrate W is extremely small. It is done. Therefore, the opening width W3 of the annular lower discharge port 49 is extremely small. Therefore, the flow velocity of the processing liquid discharged from the lower discharge port 49 can be increased. Thereby, the flow velocity at the supply position of the processing liquid from the lower discharge port 49 on the upper surface of the substrate W can be increased, and therefore, foreign matter such as particles adhering to the upper surface of the substrate W can be removed well.

  In addition, since the lower end portion 37 of the inner cylinder 35 includes an enlarged inner wall which is expanded so as to be separated from the vertical axis A3 as it goes downward, in the process of flowing from the first flow passage 42 toward the lower discharge port 49, A lateral flow is formed. In addition, since the above-mentioned enlarged inner wall includes the convex curved wall 41 which spreads in a trumpet shape, turbulent flow does not occur in the flow of the processing liquid from the first flow path 42 to the lower discharge port 49, and therefore the lower discharge The processing solution can be smoothly guided toward the outlet 49. Furthermore, since the flat plate-like portion 40 provided at the peripheral portion 39 of the trumpet-like portion 38 guides the processing liquid discharged from the lower discharge port 49 in the horizontal direction, the horizontal direction of the processing liquid discharged from the lower discharge port 49 The flow velocity is further accelerated. Due to these, the flow velocity of SC1 discharged horizontally from the annular lower discharge port 49 of the nozzle 4 is extremely high. Therefore, foreign substances such as particles adhering to the upper surface of the substrate W can be removed more satisfactorily.

  Further, the processing liquid is radially discharged from the annular upper discharge port 48 disposed adjacent to the upper side of the lower discharge port 49. The processing liquid discharged from the upper discharge port 48 covers the processing liquid discharged from the lower discharge port 49 from the upper side. Therefore, since the flow of the processing liquid discharged from the upper discharge port 48 is formed on the upper side of the processing liquid discharged from the lower discharge port 49, the processing liquid discharged from the lower discharge port 49 is directed upward. I can prevent it from flowing. Thereby, the processing liquid discharged from the lower discharge port 49 can be circulated in the horizontal direction.

  Further, when the opening width W3 of the lower discharge port 49 is extremely small, the processing liquid discharged from the lower discharge port 49 is jetted with a strong discharge pressure and scattered around, which causes particle generation. There is a fear. However, since the processing liquid discharged from the lower discharge port 49 is covered with the processing liquid discharged from the upper discharge port 48, scattering of the processing liquid discharged from the lower discharge port 49 can be prevented.

In the first embodiment, the nozzle 4 constituted by the inner cylinder 35 having the trumpet shaped portion 38 and the outer cylinder 36 has been described as an example. As a form of the inner cylinder 35, another modification can be adopted.
An inner cylinder (first cylinder) 111 according to a first modification shown in FIG. 9 has an outer cylindrical shape. The inner cylinder 111 is disposed on the vertical axis A3. The internal space of the inner cylinder 111 is a linear first flow path 112 through which the processing liquid from the first processing liquid pipe 52 (see FIG. 1) flows. At the lower end portion 113 of the inner wall of the inner cylinder 111, a convex curved wall (an enlarged inner wall) 114 is formed which spreads in a trumpet shape downward. The inner cylinder 111 has a lower surface (flat portion) 115 formed of a horizontal flat surface. The convex curved wall 114 includes the lower surface 115. When the inner cylinder 111 is brought close to the substrate W (see FIG. 2) held by the spin chuck 3 (see FIG. 1), a laterally annular shape is formed between the outer peripheral edge of the lower surface 115 and the upper surface of the substrate W. A lower discharge port (corresponding to the lower discharge port 49 in FIG. 4) is formed.

Since the lower end portion 113 of the inner cylinder 111 includes the convex curved wall 114, a lateral flow is formed in the process of flowing from the first flow path 112 toward the lower discharge port. In addition, since the convex curved wall 114 spreads like a trumpet, turbulence does not occur in the flow of the processing liquid from the first flow path 112 to the lower discharge port, and hence the processing liquid is directed to the lower discharge port Can be guided smoothly.
An inner cylinder (first cylinder) 121 according to a second modification shown in FIG. 10 has an outer cylindrical shape. The inner cylinder 121 is disposed on the vertical axis A3. The internal space of the inner cylinder 121 is a linear first flow path 122 through which the processing liquid from the first processing liquid pipe 52 (see FIG. 1) flows. The lower end portion 123 of the inner wall of the inner cylinder 121 is formed with a tapered wall 124 spreading downward. The inner cylinder 121 has a lower surface 125 which is a horizontal flat surface. The tapered wall 124 includes a lower surface 125. When the inner cylinder 121 is brought close to the substrate W (see FIG. 2) held by the spin chuck 3 (see FIG. 1), a laterally annular shape is formed between the outer peripheral edge of the lower surface 125 and the upper surface of the substrate W. A lower discharge port (corresponding to the lower discharge port 49 in FIG. 4) is formed.

Since the lower end portion 113 of the inner cylinder 121 includes the tapered wall 124, a lateral flow is formed in the process of flowing from the first flow passage 112 toward the lower discharge port. In addition, since the tapered wall 124 is tapered, the processing solution can be guided relatively smoothly toward the lower discharge port.
Since the lower end portion 123 of the inner cylinder 121 includes the tapered wall 124, a lateral flow is formed in the process of flowing from the first flow passage 122 toward the lower discharge port. In addition, since the tapered wall 124 spreads in a tapered manner, turbulent flow does not occur in the flow of the processing liquid from the first flow path 122 to the lower discharge port, and therefore, the processing liquid is directed to the lower discharge port. I can guide you smoothly.

  An inner cylinder (first cylinder) 131 according to a third modification shown in FIG. 11 includes a cylinder 132 and a substantially conical (substantially tapered) tapered portion 133 attached to the lower end of the cylinder 132. . The cylinder 132 is disposed on the vertical axis A3. The internal space of the cylinder 132 is a linear first flow path 134 through which the processing liquid from the first processing liquid pipe 52 (see FIG. 1) flows. The tapered portion 133 is attached to the cylinder 132 in a vertical posture in which the diameter increases toward the lower side. A tapered wall 135 which spreads downward is formed on the inner periphery of the tapered portion 133. At the lower end portion of the outer periphery of the tapered portion 133, a lower end surface 136 formed of a horizontal flat surface is formed. When the inner cylinder 131 is brought close to the substrate W (see FIG. 2) held by the spin chuck 3 (see FIG. 2), the lateral direction is made between the lower end surface 136 of the tapered portion 133 and the upper surface of the substrate W. An annular lower discharge port (corresponding to the lower discharge port 49 in FIG. 4) is formed.

In the process of flowing in the tapered portion 133 toward the lower discharge port, a lateral flow is formed. In addition, since the tapered wall 135 is tapered, the processing solution can be guided relatively smoothly toward the lower discharge port.
The lower end part of the inner cylinder (first cylinder) 141 according to the fourth modification shown in FIG. 12 is flared. In other words, the inner cylinder 141 has a cylindrical shape except for the lower end portion. The inner cylinder 141 is disposed on the vertical axis A3. The internal space of the inner cylinder 141 is a linear first flow path 142 through which the processing liquid from the first processing liquid pipe 52 (see FIG. 1) flows. The lower end portion 143 of the inner cylinder 141 is formed with a truncated cone-like (tapered) taper portion 144 which spreads downward. A tapered wall 145 which spreads downward is formed on the inner periphery of the tapered portion 144. When the inner cylinder 141 approaches the substrate W (see FIG. 2) held by the spin chuck 3 (see FIG. 2), between the outer peripheral edge (lower end edge) of the tapered portion 144 and the upper surface of the substrate W A laterally oriented annular lower discharge port (corresponding to the lower discharge port 49 in FIG. 4) is formed.

In the process of flowing in the tapered portion 144 toward the lower discharge port, a lateral flow is formed. In addition, since the tapered wall 145 is tapered, the processing solution can be guided relatively smoothly toward the lower discharge port.
Although the inner cylinders 35, 111, 121, 131, and 141 shown in FIGS. 3 and 9 to 12 have been described as having a substantially cylindrical shape, they have a substantially rectangular cylindrical shape having a longitudinal direction in one horizontal direction. It may be

For example, an inner cylinder (first cylinder) 151 according to the fifth modification has a substantially rectangular cylindrical shape having a longitudinal direction in one horizontal direction. The cross-sectional shape in the horizontal direction of the inner cylinder 151 is a rounded rectangle. The inner cylinder 151 is disposed on the vertical axis A3 (see FIG. 1 and the like).
The inner cylinder 151 has a rectangular cylindrical shape except for the lower end portion (tip portion) 152. The lower end portion 152 of the inner cylinder 151 includes a convex curved portion 153 which spreads downward. The convexly curved portion 153 has a trumpet shape in which the cross-sectional shape along the vertical direction goes downward. The inner wall of the convexly curved portion 153 includes a convexly curved wall 154 that spreads like a trumpet downward. The internal space of the inner cylinder 151 is a linear first flow path 155 through which the processing liquid from the first processing liquid pipe 52 described later flows. The peripheral portion (tip edge) 156 of the convexly curved portion 153 includes a flat portion (flat portion) 157 extending along the horizontal direction. When the inner cylinder 151 is brought close to the substrate W (see FIG. 2) held by the spin chuck 3 (see FIG. 2), the annular lower portion between the flat plate portion 157 and the upper surface of the substrate W A discharge port (corresponding to the lower discharge port 49 in FIG. 4) is formed.

In the first embodiment, the case where SC1 is adopted as the chemical solution (cleaning chemical solution) has been described as an example, but SC2 (hydrochloric acid / hydrogen peroxide mixture: hydrochloric acid hydrogen peroxide solution), SPM (sulfuric acid / hydrogen peroxide) mixture: sulfuric acid, hydrogen peroxide solution), a mixed solution of O ₃ and NH ₄ OH, etc. can be exemplified.
FIG. 14 is an enlarged sectional view of the nozzle 202 included in the substrate processing apparatus 201 according to the second embodiment of the present invention.

In the second embodiment, parts corresponding to the respective parts shown in the first embodiment are given the same reference symbols as in the case of FIGS. 1 to 13 and are not described.
The difference between the nozzle 202 included in the substrate processing apparatus 201 according to the second embodiment and the nozzle 4 included in the substrate processing apparatus 1 according to the first embodiment is the liquid supplied to the first flow path 42 And the type of liquid supplied to the second channel 45 are different from each other.

  As shown in FIG. 1, the processing fluid supply unit 5 includes a first liquid supply unit (first fluid supply means) 203 for supplying a first liquid to the first flow path 42 of the nozzle 4; The second flow path 45 of the nozzle 4 includes a second liquid supply unit (second fluid supply means) 204 for supplying a second liquid different from the first liquid. The first liquid supply unit 203 includes a first liquid pipe 205 for supplying the first liquid to the first flow path 42 and a first liquid valve 206 for opening and closing the first liquid pipe 205. The second liquid supply unit 204 includes a second liquid pipe 207 that supplies the second liquid to the second flow path 45 and a second liquid valve 208 that opens and closes the second liquid pipe 207. When the first liquid valve 206 is opened, the first liquid is supplied to the first flow path 42, and the first liquid flowing through the first flow path 42 is discharged from the lower discharge port 49. When the second liquid valve 208 is opened, the second liquid is supplied to the second flow path 45, and the second liquid flowing through the second flow path 45 is discharged from the upper discharge port 48. That is, the discharge of the first liquid from the lower discharge port 49 and the discharge of the second liquid from the upper discharge port 48 are performed in parallel. The annular upper discharge port 48 and the annular lower discharge port 49 are vertically adjacent to each other, so the second liquid discharged from the upper discharge port 48 is the first liquid discharged from the lower discharge port 49. Cover from above. Therefore, the first liquid and the second liquid can be mixed immediately before depositing on the upper surface of the substrate W. Since the upper discharge port 48 and the lower discharge port 49 are vertically adjacent to each other, the contact efficiency between the first liquid and the second liquid can be enhanced, whereby the first liquid and the second liquid can be used. Can be mixed efficiently.

As a combination of the first liquid and the second liquid, a combination in which a mixed liquid is generated by being mixed and reacted with each other can be exemplified. A combination of [H ₂ O ₂ ; H ₂ O ₂ ] as a combination of such a first liquid and a second liquid ([first liquid; second liquid]), [HCL; H ₂ O] ₂ ], combinations of [H ₂ SO ₄ ; H ₂ O ₂ ], etc. can be exemplified. In this case, by mixing the first liquid and the second liquid immediately before the liquid W is deposited on the upper surface of the substrate W, a fresh mixed liquid immediately after being generated can be supplied to the upper surface of the substrate W.

Further, as a combination of the first liquid and the second liquid, a combination in which the first liquid is a chemical solution (cleaning chemical solution) and the second liquid is H ₂ O (DIW) may be employed.
In this case, the chemical solution is discharged from the lower discharge port 49, and H ₂ O is discharged from the upper discharge port 48. If the opening width W3 of the lower discharge port 49 is extremely small, the chemical solution discharged from the lower discharge port 49 may be jetted with a strong discharge pressure and scattered around, which may cause particle generation. . However, since the chemical solution discharged from the lower discharge port 49 is covered by the chemical solution discharged from the upper discharge port 48, scattering of the chemical solution discharged from the lower discharge port 49 can be prevented.

In the vicinity of the lower discharge port 49 having the highest flow velocity, only the chemical solution is present. Therefore, the upper surface of the substrate W can be favorably processed (cleaned) by the chemical solution. Therefore, the amount of chemical solution used can be reduced without decreasing the treatment efficiency (cleaning efficiency) of the chemical solution.
As a combination ([first liquid; second liquid]) of such a first liquid and a second liquid, a combination of [SC1; DIW], [HOT SC1 (high temperature (eg 60 ° C. to 80 ° C. ) SC1; HOT DIW (high temperature (eg 60 ° C-80 ° C) DIW) combination, [H ₂ O ₂ ; NH ₄ OH + H ₂ O] combination, [SC 2; DIW] combination, [HOT SC 2 (high temperature A combination of SC2 (for example, 60 ° C. to 80 ° C.); HOT DIW (DIW for high temperature (for example, 60 ° C. to 80 ° C.)) and the like can be exemplified.

FIG. 15 is a cross-sectional view showing the nozzle 302 included in the substrate processing apparatus 301 according to the third embodiment of the present invention.
In the third embodiment, parts corresponding to the respective parts shown in the first embodiment are given the same reference symbols as in the case of FIGS. 1 to 13 and will not be described.
The difference between the nozzle 302 included in the substrate processing apparatus 301 according to the third embodiment and the nozzle 4 included in the substrate processing apparatus 1 according to the first embodiment is the gas supplied to the first flow path 42 And the second flow path 45 is supplied with the treatment liquid (liquid).

  As shown in FIG. 1, the processing fluid supply unit 5 includes a gas supply unit (first fluid supply means) 303 for supplying a gas to the first flow path 42 of the nozzle 4 and a second of the nozzles 4. The flow path 45 includes a treatment liquid supply unit (second fluid supply means) 304 for supplying the treatment liquid. The gas supply unit 303 includes a gas pipe 305 that supplies a gas to the first flow path 42 and a gas valve 306 that opens and closes the gas pipe 305. The processing liquid supply unit 304 includes a processing liquid pipe 307 that supplies the processing liquid to the second flow path 45 and a processing liquid valve 308 that opens and closes the processing liquid pipe 307. When the gas valve 306 is opened, the gas is supplied to the first flow path 42, and the gas flowing through the first flow path 42 is discharged from the lower discharge port 49. When the processing liquid valve 308 is opened, the processing liquid is supplied to the second flow path 45, and the processing liquid flowing through the second flow path 45 is discharged from the upper discharge port 48. That is, the discharge of the gas from the lower discharge port 49 and the discharge of the treatment liquid from the upper discharge port 48 are performed in parallel. The annular upper discharge port 48 and the annular lower discharge port 49 are vertically adjacent to each other, so that high-speed gas is sprayed from the horizontal direction to the processing liquid discharged from the upper discharge port 48. As a result, immediately before the liquid is deposited on the upper surface of the substrate W, the processing liquid and the gas collide with each other to form droplets of the processing liquid. Droplets of the formed processing liquid are supplied to the upper surface of the substrate W. The droplets are supplied to the upper surface of the substrate W as a jet. The kinetic energy of the droplets of the processing liquid can physically remove foreign matter such as particles attached to the upper surface of the substrate W.

As an example of such a combination of gas and treatment liquid ([gas; treatment liquid]), a combination of [N ₂ ; DIW], a combination of [N ₂ ; SC 1], a combination of [N ₂ ; SC 2], etc. It can be illustrated.
Moreover, the combination of [O ₃ ; NH ₄ OH + H ₂ O] can be illustrated as another example of the combination of the gas and the treatment liquid ([gas; treatment liquid]). In this case, (NH ₄ OH + H ₂ O) and high speed O ₃ can be mixed just before depositing on the upper surface of the substrate W, and immediately after the O ₃ is mixed (NH ₄ OH + H ₂ O) Can be supplied to the upper surface of the substrate W. After mixing O ₃ and (NH ₄ OH + H ₂ O), O ₃ is decomposed by NH ₄ OH with the passage of time, but (NH ₄ OH + H ₂ O) and O ₃ are substrates Fresh (NH ₄ OH + H ₂ O + O ₃ ) not decomposed can be supplied to the upper surface of the substrate W by mixing immediately before depositing on the upper surface of W.

FIG. 16 is an enlarged sectional view showing a nozzle 402 included in a substrate processing apparatus 401 according to a fourth embodiment of the present invention.
In the fourth embodiment, parts corresponding to the parts shown in the first embodiment are given the same reference symbols as in the case of FIGS. 1 to 13 and will not be described.
The nozzle 402 included in the substrate processing apparatus 401 according to the fourth embodiment is different from the nozzle 4 included in the substrate processing apparatus 1 according to the first embodiment in that the first flow path 409 is included therein. In addition to the second channel 413, a third channel 422 is provided.

The nozzle 402 is externally fitted to the inner cylinder (first cylinder) 403 and the inner cylinder 403, and is externally fitted to the middle cylinder (first cylinder) 404 surrounding the inner cylinder 403 and the middle cylinder 404, And an outer cylinder (second cylinder) 405 surrounding the middle cylinder 404. The inner cylinder 403, the middle cylinder 404, and the outer cylinder 405 are coaxially disposed on a common vertical axis A4.
The inner cylinder 403 has a cylindrical shape except for the lower end portion (tip portion) 406. The lower end portion 406 of the inner cylinder 403 includes a first trumpet-shaped portion 407 that spreads downward. In other words, the lower end portion 406 of the inner cylinder 403 includes the first convexly curved wall 412 that flares downwardly. Furthermore, in other words, the lower end portion 406 of the inner cylinder 403 includes an enlarged inner wall that expands in diameter away from the vertical axis A4 as it goes downward. The peripheral portion (tip edge) 408 of the first trumpet shaped portion 407 includes a flat portion (flat portion) 439 extending along the horizontal direction. The peripheral edge portion 408 of the first trumpet shaped portion 407 protrudes outward in the radial direction more than the cylindrical portion 410 of the middle cylinder 404 in a plan view. The internal space of the inner cylinder 403 is a linear first flow path 409 through which the first liquid from the third liquid pipe 430 described later flows.

  The middle cylinder 404 includes a cylindrical portion 410 and a first closing portion 411 that closes the upper end of the cylindrical portion 410. The outer periphery of the cylindrical portion 410 and the inner periphery of the first closing portion 411 are sealed in a fluid-tight manner by a sealing member (not shown). Between the inner cylinder 403 and the cylindrical portion 410 of the middle cylinder 404, a cylindrical second flow passage 413 is formed, through which the second liquid from the fourth liquid pipe 432 described later flows.

  The cylindrical portion 410 of the middle cylinder 404 has a cylindrical shape except for the lower end portion (tip portion) 414. The lower end portion 414 of the tubular portion 410 includes a second trumpet 415 that flares downward. In other words, the lower end portion 414 of the cylindrical portion 410 includes the second convexly curved wall 416 that flares downward. Furthermore, in other words, the lower end portion 414 of the cylindrical portion 410 includes an enlarged inner wall that expands in diameter away from the vertical axis A4 as it goes downward. The peripheral portion (tip edge) 417 of the second trumpet shaped portion 415 includes a flat portion (flat portion) 418 extending along the horizontal direction. The peripheral portion 417 of the second trumpet shaped portion 415 protrudes outward in the radial direction more than the outer cylinder 405 in a plan view.

  The outer cylinder 405 includes a cylindrical portion 419 and a second closing portion 420 that closes the upper end of the cylindrical portion 419. The outer periphery of the cylindrical portion 410 of the middle cylinder 404 and the inner periphery of the first closing portion 411 are sealed in a fluid tight manner by a sealing member (not shown). Between the cylindrical portion 410 of the inner cylinder 404 and the cylindrical portion 419 of the outer cylinder 405, a cylindrical third flow passage 422 is formed, through which the third liquid from the fifth liquid pipe 434 to be described later flows. It is done.

The inner cylinder 403, the middle cylinder 404 and the outer cylinder 405 are respectively vinyl chloride, PCTFE (polychlorotrifluoroethylene), PVDF (polyvinylidene fluoride), PTFE (polytetrafluoroethylene), PFA (perfluoro-alkylvinyl-ether-tetrafluoro) It is formed using a resin material such as -ethlene-copolymer).
Since the lower end portion 406 of the inner cylinder 403 includes the first trumpet-shaped portion 407 that spreads downward, the downstream end portion of the second flow channel 413 is formed by the trumpet-shaped first concave curved wall 424 and the trumpet And the second convexly curved wall 416. Therefore, in the process of flowing the second liquid toward the second lower discharge port 437 described later in the second channel 413, a horizontal flow is formed. In addition, since the first concave curved wall 424 and the second convex curved wall 416 are in a trumpet shape, the second liquid flow from the second flow passage 413 to the second lower discharge port 437 No turbulent flow occurs, which allows the second liquid to be smoothly guided toward the second lower discharge port 437.

An annular upper discharge port (second discharge port) 424 is formed at the lower end portion of the outer cylinder 405 by the lower end edge 421 (tip end edge) of the outer cylinder 405 and the lower end portion 423 of the cylindrical portion 410 of the middle cylinder 404. It is divided. The upper discharge port 438 is a horizontal discharge port, and discharges the third liquid flowing through the third flow channel 422 radially in the horizontal direction.
Since the lower end portion 423 of the cylindrical portion 410 of the inner cylinder 404 includes the second trumpet shaped portion 415 that spreads toward the upper surface of the substrate W, the downstream end portion of the third flow path 422 has a trumpet shaped second recess It is constituted by curved wall 426. Therefore, in the process of flowing the third liquid toward the upper discharge port 438 through the third channel 422, a horizontal flow is formed. In addition, since the second concave curved wall 426 is shaped like a trumpet, turbulence does not occur in the third liquid flow from the third flow path 422 to the upper discharge port 438. The third liquid can be smoothly guided toward the discharge port 438.

  The processing fluid supply unit 5 includes a third liquid supply unit (first fluid supply means) 427 for supplying the first liquid to the first flow path 409 of the nozzle 402 and a second flow of the nozzle 402. A fourth liquid supply unit (first fluid supply means) 428 for supplying a second liquid different from the first liquid to the channel 413 and a third liquid channel 422 of the nozzle 402 And the second liquid include a fifth liquid supply unit (second fluid supply means) 429 for supplying a different third liquid. The third liquid supply unit 427 includes a third liquid pipe 430 for supplying the first liquid to the first flow path 409 and a third liquid valve 431 for opening and closing the third liquid pipe 430. The fourth liquid supply unit 428 includes a fourth liquid pipe 432 for supplying the second liquid to the second flow path 413 and a fourth liquid valve 433 for opening and closing the fourth liquid pipe 432. The fifth liquid supply unit 429 includes a fifth liquid pipe 434 for supplying the third liquid to the third flow path 422, and a fifth liquid valve 435 for opening and closing the fifth liquid pipe 434.

By opening the third liquid valve 431, the first flow path 409 is supplied with the first liquid. By opening the fourth liquid valve 433, the second flow channel 413 is supplied with the second liquid. By opening the fifth liquid valve 435, the third flow channel 422 is supplied with the third liquid.
When processing the substrate W by the substrate processing apparatus 401, the nozzle 402 is moved and the lower end edge of the nozzle 402 is separated from the upper surface of the substrate W by the swing and elevation of the nozzle arm 17 (the distance W2 in FIG. It is placed at the opposite lower position with a certain interval). At this time, the lower end edge of the inner cylinder 403 (peripheral portion 408 of the first trumpet shaped portion 407) and the lower end edge of the middle cylinder 404 (peripheral portion 417 of the second trumpet shaped portion 415) have heights in the vertical direction. It is complete. In this state, the third liquid valve 431, the fourth liquid valve 433 and the fifth liquid valve 435 are opened. Thereby, the first liquid is supplied to the first flow path 409, the second liquid is supplied to the second flow path 413, and the third liquid is supplied to the third flow path 422. Be done. In this state, when the nozzle 402 is lowered to the close position lower than the lower position, an annular first portion is formed between the peripheral portion 408 of the first trumpet-shaped portion 407 and the upper surface of the substrate W. While the lower discharge port (first discharge port) 436 is partitioned, an annular second lower discharge port (first lower discharge port) is formed between the peripheral portion 417 of the second trumpet shaped portion 415 and the upper surface of the substrate W. Discharge port) 437 is divided.

The first lower discharge port 436 discharges the first liquid flowing in the first flow passage 409 radially in the horizontal direction. The second lower discharge port 437 discharges the first liquid flowing in the second channel 413 radially in the horizontal direction at a position farther from the vertical axis A4 than the first lower discharge port 436.
When the second liquid flows toward the second lower discharge port 437 toward the second flow path 413, the second liquid presses the first trumpet shaped portion 407 downward. In addition, when the third liquid flows through the third flow channel 422 toward the upper discharge port 438, the third liquid presses the second trumpet 415 downward. That is, a downward force acts on the nozzle 402 by the second liquid flowing through the second flow channel 413 and the third liquid flowing through the third flow channel 422.

  The vertical position of the nozzle 402 is the downward force (the downward force by the weight of the nozzle 402, the holder 24 or the like, the downward force by the air cylinder 26, and the second flow channel 413). Of the second liquid and the third liquid flowing through the third flow channel 422), the upward force (the upward force by the tension of the coil spring 27), the first from the first lower discharge port 436 (The resultant force of the upward force by the discharge of the second liquid from the second lower discharge port 437) is held in a balanced position. In this case, the discharge flow rate of the first liquid from the first lower discharge port 436 and the second lower such that the distance between the lower end edge of the nozzle 4 and the upper surface of the substrate W is extremely small. The discharge flow rate of the second liquid from the discharge port 437 and the flow rate of the compressed air to the air cylinder 26 are respectively set. Therefore, the opening width W4 of the first lower discharge port 436 and the opening width W5 of the second lower discharge port 437 are provided to be extremely small.

  The opening width W4 in the first lower discharge port 436 is provided to be extremely small. Since the lower end portion 406 of the inner cylinder 403 includes an enlarged inner wall which is diameter-expanded so as to be away from the vertical axis A4 as it goes downward, in the process of flowing from the first flow passage 409 toward the first lower discharge port 436 , Lateral flow is formed. In addition, since the expanded inner wall includes the first convex curved wall 412 that spreads like a trumpet, turbulence is generated in the first liquid flow from the first flow passage 409 to the first lower discharge port 436. Therefore, the first liquid can be smoothly guided toward the first lower discharge port 436. Thus, the flow velocity of the first liquid discharged horizontally from the annular first lower discharge port 436 is extremely high.

  Further, the first liquid discharged from the first lower discharge port 436 is covered from above by the second liquid flowing through the second flow channel 413. Therefore, the first liquid and the second liquid can be mixed immediately before depositing on the upper surface of the substrate W. A mixture of the first liquid and the second liquid flows horizontally at high speed toward the second lower discharge port 437. From the second lower discharge port 437, a mixed liquid of the first liquid and the second liquid is discharged. In addition, the first liquid and the second liquid are mixed while the mixed liquid of the first liquid and the second liquid passes through the second lower discharge port 437 which is a narrow space. Thereby, the first liquid and the second liquid can be uniformly mixed.

  The opening width W5 of the second lower discharge port 437 is extremely small. The downstream end portion of the second flow passage 413 is partitioned by the trumpet-shaped first concave curved wall 424 and the trumpet-shaped second convex curved wall 416, so that the second liquid flows in the second flow. In the process of flowing the channel 413 toward the second lower outlet 437 described later, a horizontal flow is formed. In addition, since the first concave curved wall 424 and the second convex curved wall 416 are shaped like a trumpet, the second liquid flow from the second flow path 413 to the second lower discharge port 437 No turbulent flow occurs, so that the second liquid can be smoothly guided toward the second lower discharge port 437. Thus, the flow velocity of the mixture of the first liquid and the second liquid, which is horizontally discharged from the annular second lower discharge port 437, is extremely high. Therefore, foreign substances such as particles adhering to the upper surface of the substrate W can be removed more satisfactorily.

  In addition, the third liquid is radially discharged from the annular upper discharge port 438 disposed adjacent to the upper side of the second lower discharge port 437. The first liquid discharged from the upper discharge port 438 covers the mixed liquid of the first liquid and the second liquid discharged from the second lower discharge port 437 from the upper side. Therefore, the flow of the third liquid discharged from the upper discharge port 438 is formed on the upper side of the liquid mixture of the first liquid and the second liquid discharged from the second lower discharge port 437. Therefore, the mixed liquid of the first liquid and the second liquid, which is discharged from the second lower discharge port 437, can be prevented from flowing upward. Thus, the mixed liquid of the first liquid and the second liquid discharged from the second lower discharge port 437 can be circulated in the horizontal direction.

  In addition, when the opening width W5 of the second lower discharge port 437 is extremely small, the mixed liquid of the first liquid and the second liquid discharged from the second lower discharge port 437 is It is jetted with a strong discharge pressure and scattered around, which may cause particle generation. However, since the mixture of the first liquid and the second liquid discharged from the second lower discharge port 437 is covered by the third liquid discharged from the upper discharge port 438, the second lower discharge liquid is discharged. Scattering of the mixture of the first liquid and the second liquid discharged from the outlet 437 can be prevented.

As a combination of such first liquid, second liquid and third liquid ([first liquid; second liquid; third liquid]), [H ₂ O ₂ ; NH ₄ OH + H _2] A combination of O; SC1], a combination of [H ₂ O ₂ ; HCL + H ₂ O; In this case, by mixing the first liquid and the second liquid immediately before the liquid W is deposited on the upper surface of the substrate W, a fresh mixed liquid immediately after being generated can be supplied to the upper surface of the substrate W. Further, as the third liquid, the processing liquid (SC1, SC2, etc.) already mixed is used. In this case, the third liquid has the effect of preventing the liquid from scattering and the heat retaining effect.

Although the five embodiments of the present invention have been described above, the present invention can be implemented in other embodiments.
For example, in each of the above-described embodiments, the air cylinder 26 (first load applying means) 26 for applying a downward load and the coil spring (second load applying means) 27 for holding the upward load as load applying means However, the coil spring (the second load applying means) may be eliminated.

Further, although the air cylinder 26 (first load applying means) 26 is provided and an example in which the downward load is adjusted by the valves 31 and 32 has been described as an example, a configuration in which load adjustment is not possible as the first load applying means. May be adopted. In this case, the height position of the nozzle 4 may be adjusted by moving the nozzle arm 17 up and down.
Moreover, you may employ | adopt the inner cylinder 111, 121, 131, 141, 151 which concerns on the 1st-5th modification of 1st Embodiment as an inner cylinder of 2nd-4th embodiment.

In the first to fourth embodiments, the nozzles 4, 202, 302, and 402 are described as scan nozzles, but they may be fixed nozzles in which the discharge position is fixed.
Also, the nozzles 4, 202, 302, 402 are described as being configured by the inner cylinder 35, 111, 121, 131, 141, 151, 403 and the outer cylinder 36, 405 (and the middle cylinder 404). However, the configuration of the outer cylinder 36, 405 or the middle cylinder 404 may be eliminated. That is, the nozzles 4, 202, 302, and 402 may be configured to include only the inner cylinder 35, 111, 121, 131, 141, 151, and 403.

  In the first to fourth embodiments, the nozzles 4, 202, 302, and 402 are described as being held by the nozzle arm 17 in a state in which relative displacement in the vertical direction is possible. 4, 202, 302, and 402 may be held by the nozzle arm 17 without the nozzle holding unit 16 interposed, that is, in a state where vertical displacement is not permitted. In this case, the nozzle elevating unit 20 lifts and lowers the nozzle arm 17, and the nozzle elevating unit drives the nozzle 4, 202, 302, and 402 to move up and down with respect to the nozzle arm 17. The distance between the lower end edge and the upper surface of the substrate W held by the spin chuck 3 is set to a minute distance.

In the first to fourth embodiments, the substrate processing apparatus 1, 201, 301, 401 is an apparatus for processing a disk-shaped substrate W. However, the substrate processing apparatus 1, 201, 301, An apparatus 401 may process a polygonal substrate such as a glass substrate for a liquid crystal display device.
In addition, various design changes can be made within the scope of matters described in the claims.

1 substrate processing apparatus 3 spin chuck (substrate holding means)
16 nozzle holding unit (nozzle holding means)
17 Nozzle arm (supporting member)
31 Air adjustment valve (load adjustment means)
32 Leak valve (load adjustment means)
35 inner cylinder (first cylinder)
38 trumpet 39 peripheral edge (tip edge)
40 Flat section (flat section)
41 Convex curved wall (expanded inner wall)
42 first flow path 49 lower discharge port (first discharge port)
50 First treatment liquid supply unit (first fluid supply means)
51 Second treatment liquid supply unit (second fluid supply means)
111 inner cylinder (first cylinder)
112 1st channel 114 convex curved wall (expanded inner wall)
115 Lower surface (flat portion)
121 inner cylinder (first cylinder)
122 first channel 124 tapered wall (expanded inner wall)
131 inner cylinder (first cylinder)
133 Tapered portion 134 First channel 135 Tapered wall (expanded inner wall)
141 Inner cylinder (first cylinder)
142 first flow path 144 tapered portion 145 tapered wall (expanded inner wall)
151 Inner cylinder (first cylinder)
154 Convex curved wall (expanded inner wall)
155 1st channel 157 flat part (flat part)
201 Substrate Processing Apparatus 203 First Liquid Supply Unit (First Fluid Supply Means)
204 Second liquid supply unit (second fluid supply means)
301 Substrate processing apparatus 303 Gas supply unit (first fluid supply means)
304 Treatment liquid supply unit (second fluid supply means)
401 Substrate processing apparatus 403 Inner cylinder (first cylinder)
404 middle cylinder (first cylinder)
407 1st trumpet shaped part 408 peripheral part (tip edge)
409 First Channel 412 First Convex Curved Wall (Enlarged Inner Wall)
415 First trumpet shaped part 416 Second convex curved wall (wide diameter inner wall)
417 Peripheral edge (tip edge)
418 Flat section (flat section)
427 Third liquid supply unit (first fluid supply means)
428 Fourth liquid supply unit (first fluid supply means)
429 Fifth liquid supply unit (second fluid supply means)
436 First lower discharge port (first discharge port)
437 Second lower outlet (first outlet)
439 Flat portion (flat portion)

Claims (7)

A substrate processing apparatus for processing a substrate using a processing fluid including a first fluid and a second fluid , the substrate processing apparatus comprising:
Substrate holding means for holding a substrate;
A first cylindrical body in which a columnar first flow passage for flowing a first fluid is formed, and a second cylindrical body surrounding the first cylindrical body, the fluid flowing And a second cylindrical body for partitioning the second annular flow passage between the first cylindrical body and the first cylindrical body, and the tip end edge of the first cylindrical body is between the main surface of the substrate and the second cylindrical body. A nozzle that defines an annular first discharge port for discharging fluid flowing in the first flow path radially along the main surface of the substrate;
A nozzle holding means for holding the nozzle in a state where the tip end edge of the first cylindrical body is opposed to the main surface of the substrate at an interval;
First fluid supply means for supplying a first fluid to the first flow path of the nozzle ;
And second fluid supply means for supplying the second fluid to the second flow path of the nozzle;
In the second cylindrical body, the fluid flowing in the second flow path is radially emitted along the main surface of the substrate on the side away from the main surface of the substrate with respect to the first discharge port. An annular second discharge port for discharging
The distal portion of the first cylindrical body comprises a trumpet-shaped portion extending toward the main surface of the substrate, the inner wall of the trumpet-shaped portion has a convex curved wall extending like a trumpet, and the trumpet-shaped portion The substrate processing apparatus, wherein the outer wall of has a concave curved wall that spreads like a trumpet . The substrate processing apparatus according to claim 1, wherein the tip end edge of the first cylindrical body includes a flat portion extending along the main surface of the substrate. The first fluid flowing through said first flow path is a liquid, the substrate processing apparatus according to claim 1 or 2. The second discharge port according to any one of claims 1 to 3 , wherein the second discharge port is divided between the tip end edge of the second cylinder and the tip portion of the first cylinder. Substrate processing equipment. The first fluid flowing through the first flow path is a treatment liquid ,
The substrate processing apparatus according to any one of claims 1 to 4, wherein the second fluid flowing through the second flow path is a processing liquid of the same type as the first fluid. The first fluid flowing through the first flow path is a first liquid,
The substrate processing apparatus according to any one of claims 1 to 4, wherein the second fluid flowing through the second flow path is a second liquid different in type from the first liquid. The first fluid flowing through the first flow path is a gas,
The substrate processing apparatus according to any one of claims 1 to 4 , wherein the second fluid flowing through the second flow path is a liquid.

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