JP6489973B2 - 研削装置 - Google Patents
研削装置 Download PDFInfo
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- JP6489973B2 JP6489973B2 JP2015150535A JP2015150535A JP6489973B2 JP 6489973 B2 JP6489973 B2 JP 6489973B2 JP 2015150535 A JP2015150535 A JP 2015150535A JP 2015150535 A JP2015150535 A JP 2015150535A JP 6489973 B2 JP6489973 B2 JP 6489973B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
- H01L21/449—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428 involving the application of mechanical vibrations, e.g. ultrasonic vibrations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Description
ウエーハWの研削量 :15μm
スピンドル70の回転数 :1000rpm
保持テーブル30の回転数 :300rpm
研削送り手段5の研削送り速度 :0.3μm/秒
超音波発振部901の振動周波数 :500kHz
比較例1では、ウエーハWの研削中に、研削装置1に備えるON/OFF手段16を作動させずに、例えば、研削ホイール74により複数枚のウエーハWを研削した後、超音波発振部901から超音波の発振を開始し、その後も超音波発振部901から超音波を間断なく洗浄水Lに伝播し続けて、さらに複数枚のウエーハWを継続して研削した。
比較例2では、ウエーハWの研削中に、研削装置1に備えるON/OFF手段16を作動させず、超音波発振部901からの超音波の発振を行わないこととした。まず、比較例1における場合と同様に、研削ホイール74により複数枚のウエーハWを研削した後、超音波発振部901から超音波の発振を開始し、その後も超音波発振部901から超音波を間断なく洗浄水Lに伝播し続けて、さらにウエーハWの研削を複数枚継続して行う。
実施例1では、ウエーハWの研削中に研削装置1に備えるON/OFF手段16を作動させて研削を行う場合について説明する。
16:ON/OFF手段
30:保持テーブル 300:吸着部 300a:保持面 301:枠体
31:回転手段
5:研削送り手段 50:ボールネジ 51:ガイドレール 52:モータ
53:昇降板 54:ホルダ
7:研削手段 70:スピンドル 70a:流路 70b:流路
72:スピンドルモータ 73:マウント
74:研削ホイール 740:研削砥石 740a:研削面 741:ホイール基台
8:研削水供給手段 80:研削水供給源 81:配管
9:超音波洗浄水供給手段
90:超音波ノズル 900:噴射口 901:超音波発振部
91:高周波電源 910:導電線 92:洗浄水供給源 920:配管
W:ウエーハ Wa:ウエーハの表面 Wb:ウエーハの裏面 T:保護テープ
A:着脱領域 B:研削領域
Claims (1)
- ウエーハを保持する保持テーブルと、該保持テーブルに保持されるウエーハを研削する研削砥石を環状に配設した研削ホイールを回転可能に装着するスピンドルを回転させるスピンドルモータを有する研削手段と、該研削砥石とウエーハとに研削水を供給する研削水供給手段と、を備える研削装置であって、
該研削水供給手段とは別に該研削砥石のウエーハに接触する研削面に超音波を伝播する洗浄水を噴射する超音波洗浄水供給手段と、該スピンドルモータの電流値を測定する電流値測定部と、該電流値測定部が測定する該スピンドルモータの電流値に応じて超音波の発振のONとOFFとを切換えるON/OFF手段と、を含み、
該超音波洗浄水供給手段は、該洗浄水を該研削面に噴射する噴射口と超音波を発振する超音波発振部とを備える超音波ノズルと、該超音波発振部に高周波電力を供給する高周波電源と、を備え、
該ON/OFF手段は、該研削手段による研削中に変化し該電流値測定部が測定する該スピンドルモータの該電流値の上限値と下限値とを設定し、
該高周波電源から高周波電力を供給し超音波を伝播する洗浄水を該研削面に噴射しながら研削しているときに該電流値測定部が測定する該電流値が該上限値まで上がったら該高周波電源からの高周波電力の供給を停止し超音波を伝播しない洗浄水を該研削面に供給し、
該高周波電源からの高周波電力の供給が停止され超音波を伝播しない洗浄水を該研削面に噴射しながら研削しているときに該電流値測定部が測定する該電流値が該下限値まで下がったら該高周波電源から高周波電力を供給して超音波を伝播する洗浄水を該研削面に供給し、
該電流値測定部が測定する該スピンドルモータの該電流値の該上限値と該下限値との間で該高周波電源からの高周波電力の供給をON/OFF手段で切換えて研削する研削装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015150535A JP6489973B2 (ja) | 2015-07-30 | 2015-07-30 | 研削装置 |
TW105119571A TWI694896B (zh) | 2015-07-30 | 2016-06-22 | 研磨裝置 |
KR1020160087998A KR102343159B1 (ko) | 2015-07-30 | 2016-07-12 | 연삭 장치 |
CN201610603424.6A CN106392886B (zh) | 2015-07-30 | 2016-07-28 | 磨削装置 |
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JP2015150535A JP6489973B2 (ja) | 2015-07-30 | 2015-07-30 | 研削装置 |
Publications (2)
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JP2017030071A JP2017030071A (ja) | 2017-02-09 |
JP6489973B2 true JP6489973B2 (ja) | 2019-03-27 |
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JP2015150535A Active JP6489973B2 (ja) | 2015-07-30 | 2015-07-30 | 研削装置 |
Country Status (4)
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JP (1) | JP6489973B2 (ja) |
KR (1) | KR102343159B1 (ja) |
CN (1) | CN106392886B (ja) |
TW (1) | TWI694896B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP7012454B2 (ja) * | 2017-04-27 | 2022-01-28 | 株式会社岡本工作機械製作所 | 静電吸着チャックの製造方法並びに半導体装置の製造方法 |
JP6506797B2 (ja) * | 2017-06-09 | 2019-04-24 | Towa株式会社 | 研削装置および研削方法 |
JP7045212B2 (ja) * | 2018-02-08 | 2022-03-31 | 株式会社ディスコ | 研削装置 |
JP7032217B2 (ja) * | 2018-04-05 | 2022-03-08 | 株式会社ディスコ | 研磨装置 |
JP7299773B2 (ja) * | 2019-07-09 | 2023-06-28 | 株式会社ディスコ | 研削装置 |
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-
2015
- 2015-07-30 JP JP2015150535A patent/JP6489973B2/ja active Active
-
2016
- 2016-06-22 TW TW105119571A patent/TWI694896B/zh active
- 2016-07-12 KR KR1020160087998A patent/KR102343159B1/ko active Active
- 2016-07-28 CN CN201610603424.6A patent/CN106392886B/zh active Active
Also Published As
Publication number | Publication date |
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CN106392886B (zh) | 2020-03-17 |
KR102343159B1 (ko) | 2021-12-23 |
KR20170015150A (ko) | 2017-02-08 |
CN106392886A (zh) | 2017-02-15 |
TW201713460A (zh) | 2017-04-16 |
JP2017030071A (ja) | 2017-02-09 |
TWI694896B (zh) | 2020-06-01 |
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