JP6476873B2 - Photodetection device, photodetection module, and electronic device - Google Patents

Description

  The present invention relates to a light detection device, a light detection module, an electronic device, and the like.

  In various fields, measurement using a light detection device (optical sensor) is applied. For example, a spectroscopic sensor is used to diagnose and inspect an object. In the photodetection device, there is a concern about problems caused by the measurement environment, such as the device itself being eroded by moisture present in the measurement environment. In addition, there is a concern about erosion due to sweat in the type of light detection device worn on the body. Therefore, it seems that the wiring of the light detection device should be protected by a silicon nitride film, but in that case, the light transmittance may be deteriorated, and the oxide film (insulating film) remains.

  With respect to this environmental resistance (or moisture resistance) and light transmission problem, the invention of Patent Document 1 solves this problem by using a thin silicon nitride film and a silicon oxynitride film. The invention of Patent Document 2 solves this problem by alternately laminating a plurality of thin silicon nitride films and silicon oxide films.

JP 2014-165191 A JP-A-6-21470 JP-A-8-83506

  However, in the invention of Patent Document 1 and the invention of Patent Document 2, it is necessary to add a special film called a silicon oxynitride film, which deteriorates the throughput and cost of the manufacturing process.

  According to some aspects of the present invention, it is possible to provide a light detection device, a light detection module, an electronic device, and the like that can improve moisture resistance, light transmission, and the like.

  According to one embodiment of the present invention, a semiconductor substrate, a light detection element formed on a surface of the semiconductor substrate, a wiring formed over the semiconductor substrate, and the light detection element and the wiring are formed. A multilayer optical filter, and the multilayer optical filter is formed so that the wiring is positioned inside a formation region of the multilayer optical filter in a plan view in a direction orthogonal to the semiconductor substrate. Related to photodetection device.

  In one embodiment of the present invention, the multilayer optical filter is formed so that the wiring is positioned inside the formation region of the multilayer optical filter in a plan view in a direction orthogonal to the semiconductor substrate, and the wiring is wetted with water. prevent. Therefore, it becomes possible to improve moisture resistance and light transmittance while suppressing the manufacturing cost.

  In the aspect of the invention, the multilayer optical filter may include an external connection pad of the light detection device, and the multilayer optical filter may be formed to have an opening at the position of the pad in the plan view.

  This makes it possible to prevent the multilayer optical filter from blocking the pad.

  In the aspect of the invention, the pad may be a pad for connecting one end of the photodetecting element to the outside.

  Thereby, one end of the light detection element can be electrically connected to the outside.

  In one embodiment of the present invention, the multilayer optical filter has a light-shielding layer formed on the semiconductor substrate, and the multilayer optical filter has the light-shielding layer inside a formation region of the multilayer optical filter in the plan view. You may form so that may be located.

  Thereby, it is possible to shield the non-formation region of the light detection element.

  In the aspect of the invention, the multilayer optical filter includes the multilayer optical filter between one side of the light detection device and one side of the light shielding layer facing the one side of the light detection device in the plan view. It may be formed so that one side of the film optical filter is located.

  Thereby, it is possible to form a multilayer optical filter so as to cover the light shielding layer.

  In the aspect of the invention, the wiring may be a wiring that electrically connects the pad and one end of the light detection element.

  Thereby, it is possible to electrically connect the external device and the light detection element.

  In one embodiment of the present invention, the multilayer optical filter includes an insulating layer, and the direction in plan view is a first direction, and a direction orthogonal to the first direction is a second direction. In this case, the insulating layer may be formed on an end portion of the insulating layer on the second direction side.

  This makes it possible to prevent water from entering the inside of the device from the side surface of the light detection device.

  In the aspect of the invention, the multilayer optical filter may be formed so as to cover the wiring and the light detection element in the plan view.

  Accordingly, the multilayer optical filter can be formed such that the wiring is positioned inside the formation region of the multilayer optical filter in a plan view in a direction orthogonal to the semiconductor substrate.

  According to another aspect of the present invention, there is provided a semiconductor substrate, a light detection element formed on a surface of the semiconductor substrate, a light shielding layer formed on the semiconductor substrate, and the light detection element and the wiring. A multilayer optical filter formed on the semiconductor substrate, wherein the multilayer optical filter is opposite to the one side of the light detection device and the one side of the light detection device in a plan view in a direction orthogonal to the semiconductor substrate. The present invention relates to a photodetection device formed so that one side of the multilayer optical filter is positioned between one side of the light shielding layer.

  Thereby, a multilayer optical filter is formed so as to cover the light shielding layer, and when the light shielding layer is a metal layer, corrosion due to moisture can be prevented.

  Another aspect of the present invention relates to a light detection module including a light detection device.

  Another embodiment of the present invention relates to an electronic device including the photodetection device.

FIG. 1A to FIG. 1C are configuration examples of the light detection device according to the first embodiment. FIG. 2A to FIG. 2C are modified examples of the configuration of the light detection device according to the first embodiment. FIG. 3A to FIG. 3C are comparative examples of the configuration of the photodetector. FIG. 4A to FIG. 4C are configuration examples of the photodetection device according to the second embodiment. FIG. 5A and FIG. 5B are specific configuration examples of electronic devices. A specific configuration example of an electronic device. 2 is a configuration example of an electronic device and a terminal device that perform communication connection via a network.

  Hereinafter, this embodiment will be described. In addition, this embodiment demonstrated below does not unduly limit the content of this invention described in the claim. In addition, all the configurations described in the present embodiment are not necessarily essential configuration requirements of the invention.

1. First Embodiment As described above, in the light detection device, there are conflicting problems of ensuring moisture resistance and ensuring light transmission. For example, if the light detection device is simply protected with a silicon nitride film to ensure moisture resistance, the light transmission will deteriorate.

Therefore, in this embodiment, the entire semiconductor substrate is covered with a multilayer optical filter. That is, the multilayer optical filter not only controls light transmission but also has a role of moisture resistance protection. As disclosed in the above-mentioned Patent Document 3, the alternating layers of titanium oxide (TiO ₂ ) and silicon oxide (SiO ₂ ) have high moisture resistance. Therefore, a new additional layer is not required, and both moisture resistance and light transmission can be maintained.

  Specifically, FIG. 1A to FIG. 1C illustrate a configuration example of the light detection device of the present embodiment. FIG. 1A is a plan view of the light detection device, and FIG. 1B is a cross-sectional view taken along a line X-X ′ in FIG.

  As shown in FIG. 1A, the photodetector of this embodiment includes a semiconductor substrate 110, a photodetector 120 formed on the surface of the semiconductor substrate 110, and a wiring 130 formed on the semiconductor substrate 110. And a multilayer optical filter 140 formed on the light detection element 120 and the wiring 130. 1A and 1B includes a bonding pad 150, a light shielding layer (light shielding film) 160, an insulating layer 170 (silicon oxide film), and an angle limiting filter 180, which will be described later. And a conductive plug 190. Note that the photodetector is not limited to the configuration shown in FIGS. 1A and 1B, and some of these components (such as an angle limiting filter) may be omitted or other components may be added. It is possible to implement various modifications such as.

  The light detection element 120 is, for example, a photodiode. The photodiode is formed by an impurity region (for example, a diffusion layer) formed on the semiconductor substrate 110 (for example, a silicon substrate). When the impurity region is an N-type impurity region and the silicon substrate is P-type, the PN junction corresponds to a photodiode (photodetecting element 120).

  The multilayer optical filter 140 is originally a filter provided to limit the frequency band of incident light to the light detection element 120. For example, not only reflected light of light emitted from a light source to an object but also external light or the like is incident on the light detection device. However, when an electronic device including the light detection device performs measurement processing, Light becomes noise. Therefore, a multilayer optical filter 140 is formed on the upper surface of the photodetecting element 120 so that incident light is incident on the photodetecting element 120 via the multilayer optical filter 140. Thereby, it is possible to control the external light component from the incident light so that only the reflected light component of the light emitted from the light source enters the light detection element 120. Furthermore, when using a photodetection device for measuring purposes inside the human body, for example, the frequency band of incident light can be limited so that only light having a wavelength that is easily absorbed by blood passes.

  In the present embodiment, the multilayer optical filter 140 that is originally formed for the purpose of controlling light transmission also has a role as a film for improving moisture resistance.

  Specifically, the multilayer optical filter 140 is formed such that the wiring 130 is positioned inside the formation region of the multilayer optical filter 140 in a plan view in a direction orthogonal to the semiconductor substrate 110. That is, the multilayer optical filter 140 is provided so as to cover the wiring 130 and the light detection element 120 in a plan view in a direction orthogonal to the semiconductor substrate 110. The direction orthogonal to the semiconductor substrate 110 is a direction orthogonal to the circuit formation surface. The plan view in the direction orthogonal to the semiconductor substrate 110 is a plan view when the semiconductor substrate 110 is viewed from a predetermined point in the direction orthogonal to the semiconductor substrate 110.

The multilayer optical filter 140 is formed by alternately laminating a high refractive index layer (TiO ₂ ) HRi and a low refractive index layer (SiO ₂ ) LRi as shown in an enlarged view in FIG. i is 1 ≦ i ≦ n, and n is an integer of 2 or more).

Thereby, the wiring 130 and the light detection element 120 can be prevented from being eroded by moisture. Further, as described above, the multilayer optical filter 140 can also maintain light transmittance. Furthermore, since such a configuration does not require a new additional layer, the manufacturing cost does not increase compared to the configuration shown in FIG. Therefore, it becomes possible to improve moisture resistance and light transmittance while suppressing the manufacturing cost. The multilayer optical filter 140 can be formed in a separate manufacturing process after the other parts of the photodetector are formed in a series of manufacturing processes. The multilayer optical filter 140 may be configured such that silicon nitride (Si ₃ N ₄ ) HRi and low-refractive index layer (SiO ₂ ) LRi are alternately stacked as the high refractive index layer. (I is 1 ≦ i ≦ n, and n is an integer of 2 or more).

  Moreover, the photodetection device of this embodiment includes a pad 150 for external connection of the photodetection device. The pad 150 has a structure for connecting one end of the light detection element 120 to the outside (or a bonding wire).

  Specifically, first, one end of the light detection element 120 is electrically connected to the pad. Here, one end of the photodetecting element 120 is one of the two terminals of the photodiode. More specifically, one end of the photodetecting element 120 is an electrode (for example, a conductive plug 190) connected to an impurity region that forms a photodiode.

  Further, for example, the angle limiting filter 180 may be formed by the conductive plug 190 at this time. In that case, as shown in FIGS. 1A and 1B, the photodetecting element 120 and the conductive plug 190 are electrically connected, and the conductive plug 190 and the angle limiting filter 180 are electrically connected. Connected. Then, the angle limiting filter 180 arranged in a grid and the wiring 130 are electrically connected, so that one end of the light detection element 120 and the pad are electrically connected.

  Alternatively, one end of the photodetecting element 120 may be an electrode that applies a potential to the silicon substrate. Note that another circuit element (such as a resistor) may be interposed between the light detection element 120 and the pad 150.

  Then, a bonding wire (not shown) is electrically connected to the pad 150, and the bonding wire is electrically connected to a terminal (not shown) of the chip of the photodetector. Further, the terminals are electrically connected to wiring on an external circuit board (not shown).

  Thereby, one end of the photodetecting element 120 can be electrically connected to the outside.

  The multilayer optical filter 140 is formed so as to have an opening at the position of the pad 150 in plan view in a direction orthogonal to the semiconductor substrate 110. That is, the multilayer optical filter 140 of this embodiment does not necessarily have to be formed on the entire surface of the semiconductor substrate 110, and may have an opening or the like in part.

  Thereby, it is possible to prevent the multilayer optical filter 140 from blocking the pad 150. Therefore, as described above, a bonding wire can be electrically connected to the pad 150 and the like.

  The wiring 130 is a wiring that electrically connects one end of the pad 150 and the light detection element 120. Specifically, the wiring 130 is formed of a metal layer such as aluminum on the insulating layer 170 (silicon oxide film).

  Thereby, it is possible to electrically connect the external device and the light detection element 120.

  In addition, the light detection device of this embodiment includes a light shielding layer 160 formed on the semiconductor substrate 110. The light shielding layer 160 is formed of, for example, a metal layer. The multilayer optical filter 140 is formed such that the light shielding layer 160 is located inside the formation region of the multilayer optical filter 140 in a plan view in a direction orthogonal to the semiconductor substrate 110. Further, the light shielding layer 160 is formed so as to be located outside the region where the light detection element 120 is formed. Furthermore, the light shielding layer 160 is disposed between the semiconductor substrate 110 or the insulating layer 170 and the multilayer optical filter 140 in a cross-sectional view.

  Thereby, it is possible to transmit incident light in the formation region of the light detection element 120 and shield the non-formation region of the light detection element 120. That is, in the plan view of the light detection device in the example of FIG. 1A, only the shaded area surrounded by the dotted line can be shielded. Therefore, it is possible to prevent unnecessary charges from being generated in the semiconductor substrate 110 in the non-formation region of the photodetecting element 120 and to prevent light from entering the photodetecting element 120 from an angle outside the desired range. become.

  The multilayer optical filter 140 is a multilayer optical device between one side of the light detection device and one side of the light shielding layer 160 facing the one side of the light detection device in a plan view in a direction orthogonal to the semiconductor substrate 110. It is provided so that one side of the filter 140 is located. For example, in the example of FIG. 1A, one side of the light detection device is L1, and one side of the light shielding layer 160 facing the one side L1 of the light detection device is L2. One side of the multilayer optical filter 140 located between the side L1 and the side L2 is L3.

  Thus, when the multilayer optical filter 140 is formed so as to cover the light shielding layer 160 and the light shielding layer 160 is a metal layer, corrosion due to moisture can be prevented.

  The angle limiting filter 180 is formed of a light shielding material (light absorbing material or light reflecting material) having a light shielding property with respect to a wavelength detected by the light detection element 120. Specifically, the angle limiting filter 180 is formed by a wiring forming process of a semiconductor process, and is formed by a conductive layer such as an aluminum (light reflecting material) wiring layer and a conductive plug such as a tungsten (light absorbing material) plug. The

  However, in this embodiment, the angle limiting filter 180 is not necessarily provided. For example, the light detection apparatus according to the present embodiment may have a configuration in which the angle limiting filter 180 is not provided as shown in FIGS. 2 (A) to 2 (C).

  FIG. 3A to FIG. 3C show a photodetection device as a comparative example of the present embodiment. As shown in FIGS. 3A and 3B, the photodetector of the comparative example shown in FIG. 3A includes a semiconductor substrate 110, a photodetector 120, a wiring 130, and a multilayer optical filter. 140, a bonding pad 150, a light shielding layer 160, an insulating layer 170 (silicon oxide film), an angle limiting filter 180, and a conductive plug 190.

  As shown in FIG. 3C, the configuration of the multilayer optical filter 140 is the same as the configuration shown in FIG. However, unlike FIG. 1C, in the photodetector shown in FIGS. 3A to 3C, the multilayer optical filter 140 does not cover the entire semiconductor substrate. Specifically, in the example of FIG. 3A, the multilayer optical filter 140 only covers the light detection element 120 and the angle limiting filter 180, and does not cover the wiring 130, the light shielding layer 160, and the like. Not in. Therefore, the wiring 130, the light shielding layer 160, and the like may be eroded by moisture, and there is a problem with moisture resistance. On the other hand, as described above, the photodetector shown in FIG. 1A solves the moisture resistance problem by forming the multilayer optical filter 140 so as to cover the wiring 130.

2. Second Embodiment Next, a second embodiment is shown in FIG. 4 (A) to FIG. 4 (C). In the first embodiment described above, the multilayer optical filter 140 is provided so as to cover at least the light detection element 120 and the wiring 130 on the semiconductor substrate 110. In other words, the multilayer optical filter 140 is formed only on the upper surface facing the photodetection device when viewed in plan.

  On the other hand, in the second embodiment, as shown in FIGS. 4A and 4B, the multilayer optical filter 140 is formed not only on the top surface but also on the side surface of the photodetector. That is, the multilayer optical filter 140 has a first direction DR1 as a planar view direction in a direction orthogonal to the semiconductor substrate 110, and a second direction DR2 as a direction orthogonal to the first direction DR1. The end of the insulating layer 170 may be formed on the second direction DR2 side of the insulating layer 170.

  This makes it possible to prevent water from entering the inside of the device from the side surface of the light detection device. Note that the multilayer optical filter 140 at this time has a laminated structure similar to that shown in FIG. 1C, as shown in FIG.

3. Configuration Examples of Photodetection Module and Electronic Device The photodetection device according to the present embodiment is included in a photodetection module or an electronic device. For example, the light detection module includes a light detection device and a light emitting unit. The electronic device is, for example, a measurement device or a biological information detection device.

  Below, the case where an electronic device is a measuring device is demonstrated using FIG. 5 (A)-FIG. 7, for example. First, FIG. 5 (A), FIG. 5 (B), and FIG. 6 show external views of the measurement apparatus (biological information detection apparatus) of this embodiment. 5A is a view of the measuring device as viewed from the front direction side, FIG. 5B is a view as viewed from the upper direction side, and FIG. 6 is a view as viewed from the side direction side.

  As shown in FIGS. 5A to 6, the measuring apparatus according to the present embodiment includes a band unit 510, a case unit 530, and a light detection module (sensor unit, biosensor) 300. Case portion 530 is attached to band portion 510. The light detection module 300 is provided in the case unit 530. Note that the measurement apparatus (electronic device) of the present embodiment is not limited to the configuration shown in FIGS. 5A to 6 and the like, and some of the components may be omitted or replaced with other components. Various modifications such as adding components are possible.

  The band unit 510 is for wrapping around the user's wrist and mounting the measuring device. The band part 510 has a hole part 512 and a buckle part 514. The buckle part 514 includes a band insertion part 515 and a protrusion part 516. The user inserts one end side of the band part 510 into the band insertion part 515 of the buckle part 514, and inserts the protrusion part 516 of the buckle part 514 into the hole part 512 of the band part 510, thereby attaching the measuring device to the wrist. can do. In this case, the magnitude of the pressure on the light detection module 300 (the pressure on the wrist surface) is adjusted according to which hole portion 512 the projection 516 is inserted into. In addition, you may comprise so that the size of the band part 510 may be adjusted using a buckle instead of the buckle part 514. FIG.

  The case part 530 corresponds to the main body part of the measuring apparatus. Various components such as a light detection module 300, a biological information acquisition unit, a processing unit, a storage unit, and a display processing unit are provided inside the case unit 530. That is, the case portion 530 is a housing that houses these components.

  The case portion 530 is provided with a light emission window portion 532. The light emission window part 532 is formed of a translucent member. The case portion 530 is provided with a light emitting portion (LED) mounted on a flexible substrate, and light from the light emitting portion is irradiated to the outside of the case portion 530 through the light emitting window portion 532.

  As shown in FIG. 6, the case portion 530 is provided with a terminal portion 531. When the measuring device is mounted on a cradle (not shown), the terminal part of the cradle and the terminal part 531 of the case part 530 are electrically connected. Thereby, the secondary battery (battery) provided in the case part 530 can be charged.

  The light detection module (sensor unit) 300 detects measurement biological information such as a pulse wave of a subject. For example, the light detection module 300 includes a light receiving unit and a light emitting unit. The light detection module 300 includes a convex portion 552 that is formed of a light-transmitting member and that makes contact with the skin surface of the subject to apply pressure. In this state where the convex portion 552 presses the skin surface, the light emitting portion emits light, and the light receiving portion receives the light reflected by the subject (blood vessel), and the light reception result is detected. The signal is output to the biological information acquisition unit. The measurement biological information to be detected by the measurement apparatus of the present embodiment is not limited to the pulse wave (pulse rate), and the measurement apparatus can measure biological information other than the pulse wave (for example, oxygen saturation in blood, It may be a device that detects body temperature, heart rate, and the like.

  FIG. 7 is an explanatory diagram regarding the mounting of the measuring apparatus and the communication with the information processing apparatus 200.

  As shown in FIG. 7, the user who is the subject wears the measuring device on the wrist 410 like a watch. As shown in FIG. 6, a light detection module 300 is provided on the surface of the case portion 530 on the subject side. Accordingly, when the measuring device is mounted, the convex portion 552 of the light detection module 300 contacts and presses the skin surface of the wrist 410, and in this state, the light emitting unit of the light detection module 300 emits light, and the light receiving unit. Measured biological information such as pulse waves is detected by receiving the reflected light.

  The measurement apparatus and the information processing apparatus 200 are connected by communication so that data can be exchanged. The information processing device 200 is a mobile terminal device such as a smartphone, a mobile phone, or a feature phone. Alternatively, the information processing apparatus 200 may be an information processing terminal such as a tablet computer. As a communication connection between the measurement apparatus and the information processing apparatus 200, for example, proximity wireless communication such as Bluetooth can be employed. In this way, the measurement device and the mobile terminal device 200 are connected to communicate with each other, and various information (measurement biological information, activity state information) such as the pulse rate and calorie consumption is displayed on the display unit 430 (LCD, etc.) of the mobile terminal device 200. Can be displayed. That is, various information obtained based on the detection signal of the sensor unit 300 can be displayed. Note that the calculation processing of information such as the pulse rate and calorie consumption may be executed by the measurement device, or at least a part thereof may be executed by the mobile terminal device 200.

  Although the present embodiment has been described in detail as described above, it will be easily understood by those skilled in the art that many modifications can be made without departing from the novel matters and effects of the present invention. Accordingly, all such modifications are intended to be included in the scope of the present invention. For example, a term described at least once together with a different term having a broader meaning or the same meaning in the specification or the drawings can be replaced with the different term in any part of the specification or the drawings. In addition, the configurations and operations of the light detection device, the light detection module, and the electronic device are not limited to those described in the present embodiment, and various modifications can be made.

110 semiconductor substrate, 120 photodetector, 130 wiring,
140 multilayer optical filter, 150 pads (bonding pads),
160 light shielding layer, 170 insulating layer, 180 angle limiting filter, 190 conductive plug,
200 information processing device (portable terminal device), 300 light detection module (sensor unit),
410 wrist, 430 display, 510 band, 512 hole, 514 buckle,
515 Band insertion part, 516 protrusion part, 530 case part, 531 terminal part,
532 Light emitting window, 552 convex

Claims (11)

A semiconductor substrate;
A photodetecting element provided on the surface of the semiconductor substrate;
A pad for external connection;
Wiring provided on the semiconductor substrate and electrically connecting one end of the photodetecting element and the pad ;
A multilayer optical filter provided on the light detection element and the wiring;
Including
The multilayer optical filter is:
In a plan view in a direction orthogonal to the semiconductor substrate, the wiring is located inside the arrangement region of the multilayer optical filter, and one side of the multilayer optical filter is disposed between one side of the semiconductor substrate and the pad. Is provided so as to be positioned . In claim 1,
Before Symbol multilayer film optical filter,
The photodetection device is provided with an opening at the position of the pad in the plan view. In claim 2,
The pad
Photodetector which is a pad for connecting the one end of the light detecting element to the outside. In any one of Claims 1 thru | or 3,
A light-shielding layer provided on the semiconductor substrate;
The multilayer optical filter is:
The photodetecting device, wherein the light shielding layer is provided so as to be positioned inside an arrangement region of the multilayer optical filter in the plan view. In claim 4,
The multilayer optical filter is:
Wherein in the plan view, and the side of the semiconductor substrate, between one side of the light shielding layer facing the one side of the semiconductor substrate, the said one side of the multilayer film optical filter is provided so as to be located And a light detection device. In any one of Claims 1 thru | or 5 ,
An insulating layer provided on the semiconductor substrate so as to cover the light detection element in the plan view ;
The multilayer optical filter is:
The direction of the plan view a first direction, said first direction orthogonal to a direction in case of a second direction, Oite on the second direction side of the end portion of the insulating layer, the semiconductor A photodetection device, wherein the photodetection device is provided so as to stand on a substrate . A semiconductor substrate;
A photodetecting element provided on the surface of the semiconductor substrate;
Wiring provided on the semiconductor substrate;
A multilayer optical filter provided on the light detection element and the wiring;
An insulating layer provided on the semiconductor substrate so as to cover the photodetecting element in a plan view in a direction orthogonal to the semiconductor substrate;
Including
The multilayer optical filter is:
In the flat plane view, the with the wiring inside the multilayer optical filter arrangement region of is provided so as to be positioned, the direction of the plan view is a first direction, a direction orthogonal to the first direction In the second direction, the photodetector is provided so as to stand on the semiconductor substrate on the second direction side of the end portion of the insulating layer . In any one of Claims 1 thru | or 7 ,
The multilayer optical filter is:
The photodetection device is provided so as to cover the wiring and the photodetection element in the plan view. A semiconductor substrate;
A photodetecting element provided on the surface of the semiconductor substrate;
A light shielding layer provided on the semiconductor substrate;
A pad for external connection;
Wiring provided on the semiconductor substrate and electrically connecting one end of the photodetecting element and the pad ;
A multilayer optical filter provided on the light detection element and the wiring;
Including
The multilayer optical filter is:
In a plan view in a direction perpendicular to the semiconductor substrate, to one side of the semiconductor substrate, between one side of the light shielding layer facing the one side of the semiconductor substrate, with one side of the multilayer film optical filter is located A photodetecting device , wherein the one side of the multilayer optical filter is located between the one side of the semiconductor substrate and the pad .   A photodetection module comprising the photodetection device according to claim 1.   An electronic apparatus comprising the light detection device according to claim 1.

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