JP6472683B2 - Semiconductor laser module - Google Patents

Description

  The present invention relates to a semiconductor laser module that outputs laser light from a semiconductor laser element.

2. Description of the Related Art Semiconductor laser modules that output laser light using small and highly efficient semiconductor laser elements have been rapidly spreading in recent years, the price has been decreasing year by year, and the range of use has been expanded.
In such a semiconductor laser module, a current is supplied to the semiconductor laser element to output a laser beam. However, the semiconductor laser element generates heat due to the output at the same time as the output of the laser beam. It is important to be able to exhaust heat efficiently.

  In addition, the output of the semiconductor laser module is increased, and the increase in the amount of heat generated from the semiconductor laser element caused by the increase in output is a problem. There is a need for a semiconductor laser module with possible heat removal means.

  As a general semiconductor laser module 100, as shown in FIG. 10, first, a semiconductor laser element 102 is provided, and a lower surface 102a of the semiconductor laser element 102 and an electrode plate 104 made of copper or the like are composed of a solder material 106. Is attached through. On the other hand, the upper surface 102b of the semiconductor laser element 102 is bonded to the electrode body 108 using a bonding wire 110 such as a gold wire.

  Then, by supplying current to the electrode plate 104 and the electrode body 108, laser light is emitted from the end face of the semiconductor laser element 102. Note that heat emitted from the semiconductor laser element 102 during light emission is transmitted to the electrode plate 104 provided on the lower surface 102 a of the semiconductor laser element 102, and is exhausted from there.

  Such an exhaust heat method, that is, a method of exhausting heat only from the electrode plate 104 provided on the lower surface 102a of the semiconductor laser element 102 is limited to exhaust heat from the lower surface 102a of the semiconductor laser element 102. There is a limit, and it has been difficult to efficiently exhaust heat generated by the increase in laser beam output.

Efficient exhaust heat is performed not only from the lower surface 102a of the semiconductor laser element 102 but also from the upper surface 102b, and thereby the exhaust heat efficiency is dramatically increased.
As shown in FIG. 11, the semiconductor laser module 200 employing such a method of exhausting heat from both surfaces (lower surface and upper surface) of the semiconductor laser element includes a semiconductor laser element 202, and the lower surface of the semiconductor laser element 202 is provided. 202a and the electrode plate 204 are attached via the solder material 206, and the upper surface 202b of the semiconductor laser element 202 and the electrode plate 208 are attached via the solder material 210 (for example, Patent Document 1 and Patent Document 2). .

  In the semiconductor laser module 200, when the semiconductor laser element and the electrode plate are assembled, when mechanically tightened, the semiconductor laser has a characteristic (cleavage) that is easily cracked in a specific direction when stress is applied. The possibility that the element is destroyed increases. In addition, when the temperature of the semiconductor laser element rises due to laser oscillation, thermal expansion of the semiconductor laser element and the surrounding electrode material occurs, which causes mechanical stress to be applied to the semiconductor laser element and damage the same. The possibility of receiving will increase.

  Therefore, by using the solder materials 206 and 210 made of a material having a low melting point, it is possible to limit the application of stress to the semiconductor laser element 202 and reduce damage, and between the semiconductor laser element 202 and the electrode plate 204, In addition, good bonding between the semiconductor laser element 202 and the electrode plate 208 is possible.

JP 2003-37325 A Special table 2011-522407 gazette

  By the way, in such a semiconductor laser module 200, when joining the semiconductor laser element 202 and the electrode plates 204, 208 using the solder materials 206, 210, they are disposed on the lower surface 202a and the upper surface 202b of the semiconductor laser element 202. The semiconductor laser element 202 floats in the melted solder material 206, 210.

  For this reason, even if the semiconductor laser element 202 is disposed in advance at a predetermined position, the solder materials 206 and 210 are melted to form a gap between the semiconductor laser element 202 and the electrode plate 204 and between the semiconductor laser element 202 and the electrode plate 208. After the bonding, the semiconductor laser element 202 is slightly displaced from the predetermined position where it was originally disposed, and an accurate position configuration cannot be maintained, and the traveling direction of the laser light is the desired direction. There was a case where it would shift.

  Furthermore, since the joining portion between the semiconductor laser element 202 and the solder materials 206 and 210 is merely joined by the solder materials 206 and 210, the semiconductor laser element 202 is gradually added as laser oscillation at high output is repeated. In some cases, the bonding force between the solder material 206 and the solder material 210 is weakened, and the output is reduced or broken.

  In particular, when oscillating a pulse laser beam, the instantaneous heat generation amount is remarkably increased, so that the thermal shock is also increased, and a joint portion (interface) between the semiconductor laser element 202 and the solder materials 206 and 210 is used with use. It may deteriorate rapidly and lead to destruction.

  As a cause of deterioration of the joint portion (interface) between the semiconductor laser element 202 and the solder materials 206 and 210, there is a difference in thermal expansion coefficient between the semiconductor laser element 202 and the solder materials 206 and 210. Since the thermal expansion coefficients of the two are not the same, distortion may occur between the two due to heat generation of the semiconductor laser element 202 due to laser oscillation. In order to avoid this, by using the solder materials 206 and 210 having characteristics close to the thermal expansion coefficient of the semiconductor laser element 202, it is possible to reduce the amount of distortion generated. However, in actual use, The effect of distortion due to the gradient is inevitable.

  In other words, the temperature of the semiconductor laser element 202 rapidly increases with laser oscillation, the temperature of the bonding surface is similarly increased with a delay due to the heat, and the temperature further increases with a delay after that due to heat conduction. As a result, a large thermal gradient occurs and distortion occurs. Such a joint surface between the semiconductor laser element 202 and the solder materials 206 and 210 and the generation of a thermal gradient appearing on the solder materials 206 and 210 are accompanied by laser oscillation and cannot be avoided.

  In order to solve such problems, the material of the solder materials 206 and 210 is improved, and the surface modification of the lower surface 202a and the upper surface 202b of the semiconductor laser element 202 is performed in order to improve the bondability with the solder materials 206 and 210. Is being sought. However, particularly in the case of the high-power semiconductor laser module 200, the actual situation is that the durability is still not sufficient.

  The present invention has been made in view of such a situation, and even when laser oscillation at high output is repeated, the bonding force between the semiconductor laser element and the electrode body is not weakened, and the electrical conductivity and the exhaust heat performance are reduced. An object of the present invention is to provide a semiconductor laser module that can be used stably for a long period of time while maintaining both of them in a very high state and maintaining a high output of laser light.

  The present invention has been invented to solve the problems in the prior art as described above. In other words, the contact between the semiconductor laser element and the conductive plate increases the conductivity and heat transfer as it is complete. However, in order to bring the two flat surfaces into contact with each other with high efficiency, the two are completely high-performance. A flat surface is desirable.

  In order to bring both planes into contact with each other with high efficiency, a considerable mechanical stress is required. However, since the semiconductor laser element has a cleavage property, it is preferable to apply as little mechanical stress as possible to realize stable use.

  Thus, the semiconductor laser module of the present invention has been invented, which can reduce the contact resistance between the semiconductor laser element and the conductive plate to a value below an allowable value with a small mechanical stress, and can realize long-term stable use.

The semiconductor laser module of the present invention is
A semiconductor laser element;
Electrode bodies joined to both the lower surface and the upper surface of the semiconductor laser element so as to be electrically connected to each other through a conductive member;
A semiconductor laser module comprising at least
The semiconductor laser module is:
The conductive member interposed between the semiconductor laser element and the electrode body is a conductive plate,
The conductive plate located on the lower surface of the semiconductor laser element and / or the conductive plate located on the upper surface of the semiconductor laser element,
A plurality of protrusions are provided on the surface to be bonded to the semiconductor laser element,
Furthermore, an insulating plate is disposed next to the semiconductor laser element in which the conductive plate is provided on the lower surface and the upper surface,
The semiconductor laser element provided with the conductive plate on the lower surface and the upper surface and the insulating plate are provided between the electrode body and the electrode body,
By sandwiching the electrode body and the electrode body with each other by sandwiching means, a semiconductor laser element having a conductive plate on the lower surface and the upper surface is sandwiched between the electrode body and the electrode body, thereby The tip of the plurality of protrusions of the plate is configured to be crushed by the semiconductor laser element,
Before clamping the electrode body and the electrode body with each other clamping means,
The thickness of the insulating plate in the cross-sectional direction is
The semiconductor laser element;
A conductive plate provided on the lower surface of the semiconductor laser element before the protrusions are crushed;
A conductive plate provided on the upper surface of the semiconductor laser element before the protrusions are crushed;
It is characterized by being set thinner than the total thickness in the cross-sectional direction.

  If configured in this way, the contact resistance generated between the semiconductor laser element and the electrode body because the tip of the protrusion provided on the conductive plate deforms and contacts with a slight force when it contacts the semiconductor laser element. Can be reduced.

  In this case, the tip of the protrusion is deformed, but plastic deformation occurs at this portion. In the area close to the deformed part of the protrusion, there is a region that receives elastic deformation and contracts due to stress, but this region returns to its original state when the stress decreases, so the size of the semiconductor laser element is thermally expanded. Even if it fluctuates due to the above, the contact resistance with the conductive plate is kept low.

  Therefore, even when laser oscillation at high output is repeated, the bonding force between the semiconductor laser element and the electrode body is not weakened, and both the electrical conductivity and the exhaust heat performance are maintained to be extremely high, and the laser beam is output at a high power. Can be used stably for a long period of time.

Furthermore, if an insulating plate is provided, the insulation between the electrode body (positive electrode) and the electrode body (negative electrode) is maintained at a high level, and insulation is achieved when both electrode bodies are sandwiched by the clamping means. Since the thickness of the plate stipulates the distance between the two electrode bodies, the combination of the semiconductor laser element and the two conductive plates respectively disposed on the lower surface and the upper surface of the semiconductor laser element as a whole after the projections are crushed This interval can be kept.
Therefore, it is possible to prevent the conductive plate from being deformed more than necessary, and to limit the application of unnecessary stress to the semiconductor laser element.

  Further, if sandwiched through the sandwiching means in this way, the protrusions of the conductive plate are pressed and crushed until they reach a thickness defined by the thickness of the insulating plate, so that they contact the semiconductor laser element and the electrode body. Each joint can be reliably maintained.

The semiconductor laser module of the present invention is
A refrigerant feed hole is formed in the electrode body, and refrigerant supply means for supplying the refrigerant into the refrigerant feed hole is provided.

  If the coolant is supplied into the coolant passage hole formed inside the electrode body in this way, the heat generated in the semiconductor laser element can be efficiently exhausted, and even if laser oscillation at high output is repeated. It can be used stably for a long time while maintaining high output.

The semiconductor laser module of the present invention is
Before clamping the electrode body and the electrode body with each other clamping means,
The thickness of the insulating plate in the cross-sectional direction is
The semiconductor laser element;
A conductive plate provided on the lower surface of the semiconductor laser element before the protrusions are crushed;
A conductive plate provided on the upper surface of the semiconductor laser element before the protrusions are crushed;
It is characterized in that it is set to be thinner within the range of 100 to 1000 μm than the thickness in the cross-sectional direction obtained by adding up all of

  If the insulating plate has such a thickness, the semiconductor laser element is not subjected to stress more than necessary due to absorption of stress due to deformation of the protrusion formed on the surface of the conductive plate, and conduction with the electrode body is ensured. Can be maintained.

The semiconductor laser module of the present invention is
The conductive plate located on the lower surface of the semiconductor laser element and / or the conductive plate located on the upper surface of the semiconductor laser element,
A plurality of protrusions are provided on the surface to be joined to the electrode body,
By sandwiching the electrode body and the electrode body with each other by sandwiching means, a semiconductor laser element having a conductive plate on the lower surface and the upper surface is sandwiched between the electrode body and the electrode body, thereby A plurality of protrusions of the plate are configured so that the tip portions thereof are crushed by the semiconductor laser element and the conductive plate.
Thus, if the projection on the surface to be joined to the electrode body is also provided, the contact resistance generated between the semiconductor laser element and the electrode body can be further reduced.

The semiconductor laser module of the present invention is
After the tip of the projection is crushed by the vertically adjacent members,
When the conductive plate is a flat plate that does not have the protrusion, the ratio of the total area of the surface to be bonded to the semiconductor laser element is 100%.
The ratio of the total area of the tip portions of the plurality of protrusions on the side to be joined to the semiconductor laser element of the conductive plate having the plurality of protrusions is in the range of 30 to 80%.

If this ratio is too small, both conductivity and exhaust heat performance will be lowered. On the other hand, if this ratio is too large, it is difficult to form the protrusions, which increases the cost.
In order to supply power necessary for stable oscillation of the semiconductor laser element and to effectively exhaust heat, it is preferable to be within the above range. Within such a range, the contact resistance that can occur between the semiconductor laser element and the electrode body can be kept within an allowable range.

The semiconductor laser module of the present invention is
The protrusion before the tip portion is crushed has a substantially circular or polygonal cross section.

  With such a shape, the protrusion can be easily formed on the surface of the conductive plate. The processing method is not particularly limited. For example, the protrusion can be easily formed by, for example, pressing a mold having protrusions against the conductive plate or tracing while pressing the polishing cloth in two or three directions. Can be formed.

The semiconductor laser module of the present invention is
The height of the protrusion before the tip portion is crushed is in the range of 50 to 200 μm.

  If the height of the protrusion is too low, the effect of the protrusion is lost due to slight deformation. If the height of the protrusion is about 200 μm, a sufficient effect can be obtained, and a protrusion higher than this is unnecessary because the processing cost increases.

  Within such a height range, the contact resistance that can occur between the semiconductor laser element and the electrode body can be kept within an allowable range, and a current can be reliably passed through the semiconductor laser element. The generated heat can be exhausted.

The semiconductor laser module of the present invention is
The conductive plate is made of gold.
As such, gold is suitable for the material of the conductive plate because it has high electrical conductivity and hardly deteriorates over time.

The semiconductor laser module of the present invention is
A thickness of the conductive plate in a cross-sectional direction before the protrusion is crushed is in a range of 0.2 to 0.5 mm.

  If the thickness is within such a range, the effect of the protrusion formed on the surface can be effectively exhibited, and mechanical strain is applied to the semiconductor laser device having high cleavage property while maintaining high conductivity and exhaust heat. It is possible to join the electrode bodies so as not to cause the.

The semiconductor laser module of the present invention is
The insulating plate is provided with a recess penetrating in the cross-sectional direction,
A semiconductor laser element having a conductive plate on the lower surface and the upper surface is disposed in the recess.

  If the semiconductor laser element having the conductive plate provided on the lower surface and the upper surface is disposed in the recess in this way, positioning can be performed easily, and the semiconductor laser module can be manufactured efficiently. Can do.

  According to the present invention, even when laser oscillation at high output is repeated, the bonding force between the semiconductor laser element and the electrode body is not weakened, and both the electrical conductivity and the exhaust heat performance are maintained in an extremely high state. It is possible to provide a semiconductor laser module that can be used stably for a long period of time while maintaining light at a high output.

FIG. 1 is a schematic cross-sectional view of an embodiment of a semiconductor laser module of the present invention. FIG. 2 is a partially enlarged sectional view of a conductive plate used in the semiconductor laser module of the present invention. 3A is an explanatory view of the protrusion before being crushed, and FIG. 3B is an explanatory view of the crushed protrusion. FIG. 4 is a schematic cross-sectional view for comparing and explaining the thickness of the semiconductor laser element, two conductive plates, and the thickness of the insulating plate. FIG. 5A is an explanatory diagram for explaining the area of the tip of the projection before being crushed, and FIG. 3B is an explanatory diagram for explaining the area of the tip of the crushed projection. FIG. 6 is an explanatory diagram showing a stress-strain curve of a general metal material. FIG. 7 is a schematic cross-sectional view of another embodiment of the semiconductor laser module of the present invention. FIG. 8 is a schematic partial cross-sectional view showing a modified example in which the protrusion of the conductive plate is different in the semiconductor laser module of the present invention. FIG. 9 is a schematic perspective view of another embodiment of the insulator. FIG. 10 is a schematic view of a conventional semiconductor laser module. FIG. 11 is a schematic view of a conventional semiconductor laser module.

Hereinafter, embodiments of the present invention will be described in more detail based on the drawings.
The semiconductor laser module of the present invention outputs laser light to the outside by passing a current through the semiconductor laser element.

  As shown in FIG. 1, a semiconductor laser module 10 according to an embodiment of the present invention includes a semiconductor laser element 12 and an electrode body 14 joined to a lower surface 12 a of the semiconductor laser element 12 through a conductive plate 16 so as to be conductive. And an electrode body 18 joined to the upper surface 12b of the semiconductor laser element 12 through the conductive plate 20 in a conductive manner, and an insulating plate 40 is inserted between the electrode body 14 and the electrode body 18. Has been.

Then, by sandwiching the electrode body 14 and the electrode body 18 by the clamping means 32, the tip portions 22 a of the plurality of projections 22 of the conductive plates 16 and 20 are crushed by the semiconductor laser element 12 and the electrode bodies 14 and 18. In addition, the semiconductor laser element 12 in which the conductive plates 16 and 20 are provided on the lower surface 12 a and the upper surface 12 b is sandwiched between the electrode body 14 and the electrode body 18.
Although it does not specifically limit as the clamping means 32, For example, the fastening member which consists of a combination of a screw and a nut can be used.

  The semiconductor laser element 12 is generally made of a single crystal in which materials such as gallium, arsenic, phosphorus, and indium are mixed at a specified ratio and formed on a gallium arsenide substrate by vapor phase synthesis. It is preferable to become. Although the semiconductor laser device 12 obtained by such a method has a high mechanical strength, it has a strong cleavage property and has a characteristic of being easily cracked. In addition, a surface obtained by cleaving in a specific direction using the cleavage property serves as a laser beam resonator as an optical surface.

  The size of the semiconductor laser element 12 is, for example, a width of about 10 mm, a thickness of about 0.2 mm, a depth of about 2 mm, and the emitted laser light has a width of about 10 mm and a thickness (height) of about 0.2 mm. That emits light immediately and spreads at about 35 to 45 ° can be used.

  As described above, the conductive plate 16 positioned on the lower surface 12a of the semiconductor laser element 12 and the conductive plate 20 positioned on the upper surface 12b of the semiconductor laser element 12 include the surface on the side bonded to the semiconductor laser element 12, the electrode body 14, and the like. A plurality of protrusions 22 are provided on the surface to be joined to the surface 18.

  The cross-sectional shape of the protrusion 22 before the tip portion 22a is crushed is not particularly limited, but is preferably substantially circular or polygonal in cross section, and in this embodiment, has a substantially triangular cross section.

  As shown in FIG. 2, the conductive plate 20 provided with such a plurality of protrusions 22 has a thickness T1 in a range of 200 to 500 μm before the tip portion 22a is crushed, and the tip portion 22a is crushed. It is preferable that the height H1 of the protrusion 22 before being in the range of 50 to 200 μm.

  Further, the conductive plates 16 and 20 after the tips 22a of the protrusions 22 are crushed by vertically adjacent members are flat semiconductors that do not have the protrusions 22 and are bonded to the semiconductor laser device 12 over the entire surface. Assuming that the ratio of the total area of the surface to be bonded to the laser element 12 is 100%, the conductive plates 16 and 20 having the plurality of protrusions 22 are bonded surfaces of the plurality of protrusions 22 to be bonded to the semiconductor laser element 12. The ratio of the total area is preferably in the range of 30 to 80%.

  If this ratio is too small, both conductivity and exhaust heat performance will be low. Conversely, if this ratio is too large, it will be difficult to form the protrusions 22 and the cost will be high. In order to supply power necessary for stable oscillation of the semiconductor laser element 12 and to effectively exhaust heat, it is preferable to be within the above range. Within such a range, the contact resistance that can occur between the semiconductor laser element 12 and the electrode bodies 14 and 18 can be kept within an allowable range.

  The conductive plates 16 and 20 stably supply a large current supplied from the electrode bodies 14 and 18 to the semiconductor laser element 12 and efficiently exhaust the heat generated from the semiconductor laser element 12. It is desirable to be made of a material that has conductivity and does not easily deteriorate over time.

Specifically, it is desirable to be made of gold. Although gold is expensive, the total area of the lower surface 12a and the upper surface 12b of the semiconductor laser element 12 is about 40 to 50 mm ^{2 for} an output of 100 W class, and the thickness is about 0.1 to 0.5 mm. The cost of the semiconductor laser module 10 is not significantly increased.

The conductive plates 16 and 20 are preferably flexible so as not to cause mechanical strain as much as possible in the semiconductor laser element 12 having strong cleavage.
When the conductive plates 16 and 20 made of gold are softened, the softened conductive plates 16 and 20 can be obtained by heating and maintaining at a high temperature of, for example, about 1000 ° C. or higher and then rapidly cooling.

  Further, the plurality of protrusions 22 provided on the surfaces of the conductive plates 16 and 20 may be provided by, for example, press working that presses a mold having protrusions and depressions on the plate material for the conductive plates 16 and 20. It is possible and is not particularly limited. The protrusion 22 reduces the contact resistance between the conductive plates 16 and 20 and the semiconductor laser element 12 and the electrode bodies 14 and 18, and ensures the electrical conductivity between the semiconductor laser element 12 and the electrode bodies 14 and 18. And good exhaust heat performance.

  When the semiconductor laser element 12 and the conductive plates 16 and 20 are joined, that is, when the electrode body 14 and the electrode body 18 are sandwiched by the sandwiching means 32, as shown in FIGS. 3 (a) and 3 (b). Furthermore, the tip portions 22a of the plurality of protrusions 22 of the conductive plates 16 and 20 come into contact with the semiconductor laser element 12 and the electrode bodies 14 and 18 and are deformed with a small force.

At this time, if an excessive mechanical stress is applied, all the protrusions 22 are crushed, and an excessive mechanical stress is applied to the semiconductor laser element 12 to cause a damage.
Therefore, by sandwiching the insulating plate 40 between the electrode body 14 and the electrode body 18, the distance between the electrode body 14 and the electrode body 18 is prevented from becoming narrower than the thickness of the insulating plate 40. Excessive mechanical stress is prevented from being applied to the semiconductor laser element 12.

  In this case, as shown in FIG. 4, the thickness T3 of the insulating plate 40 is the thickness T2 in the cross-sectional direction in which the semiconductor laser element 12 and the two conductive plates 16 and 20 before the protrusions 22 are crushed are combined. It is preferable to set the thickness within a range of 50 to 200 μm. Thereby, it is possible to surely prevent poor conduction, and it is possible to prevent unnecessary mechanical stress from being applied to the semiconductor laser element 12 that has cleavage properties and is easily broken.

  As shown in FIG. 5A, when the projection 22 has a substantially triangular cross section, and the ratio of the area A of the projection 22 before the tip 22a is crushed is 100%, As shown in FIG. 5B, the ratio of the area B of the tip 22a of the protrusion 22 after the tip 22a is crushed is preferably in the range of 120 to 200%.

  If the area B of the projection 22 after being crushed is too small, sufficient energization and heat removal cannot be performed. Conversely, if the area B after being crushed is too wide, mechanical stress is likely to be applied to the semiconductor laser element 12. Therefore, it is preferable to set such a ratio.

  Here, depending on the processing method, the tip 22a of the protrusion 22 may be extremely sharpened. In such a case, the ratio of the area B to the area A is substantially large. It becomes a numerical value and may exceed 500%, for example. Therefore, the above range is defined only in the case of the embodiment in which the protrusion 22 has a substantially triangular cross section.

  Further, when the value of H1, which is the height of the protrusion 22 before being crushed, is 100%, the height of the protrusion 22 after being crushed is in the range of 40 to 80%. You may make it adjust a crushing condition.

  Also in this case, the contact resistance that can be generated between the semiconductor laser element 12 and the electrode bodies 14 and 18 can be kept within an allowable range, and a current is surely passed through the semiconductor laser element 12 to be generated in the semiconductor laser element 12. Heat can be exhausted.

  Further, at this time, as shown in FIG. 6, since the protrusion 22 coexists with a portion in contact with the semiconductor laser element 12 while being crushed by plastic deformation and a portion subjected to elastic deformation, temperature fluctuations occur. Even if the stress applied to the conductive plates 16 and 20 fluctuates due to fluctuations in the distance between the electrode body 14 (positive electrode) and the electrode body 18 (negative electrode), etc. (elasticity) The deformation area) is automatically corrected. Therefore, the contact between the conductive plates 16 and 20 and the semiconductor laser element 12 is maintained well.

  The thermal expansion coefficients of the conductive plates 16 and 20 and the semiconductor laser element 12 are not equal, and the distance between the electrode body 14 and the electrode body 18 is fluctuated by laser oscillation, but there is an effect on the supply current and the exhaust heat performance. It is not a thing.

  The configuration of the semiconductor laser element 12 is not particularly limited, and a generally known one may be used. However, a supply current can be efficiently converted into laser light, and sufficient mechanical strength can be obtained. It is desirable to adopt what has.

  On the other hand, the material of the electrode bodies 14 and 18 is not particularly limited as long as it is a material normally used as the electrode bodies 14 and 18, but a large current reaching several hundred amperes can be stably supplied. Since the role of exhausting heat generated from the semiconductor laser element 12 is also required, the body is preferable.

  In the semiconductor laser module 10 shown in FIG. 1, the size of the semiconductor laser element 12 and the size of the conductive plates 16 and 20 are substantially the same, but the present invention is not limited to this. For example, the electrode body 14 and the electrode body 18 are wider in the left-right direction than the semiconductor laser element 12, and a through hole 30 is provided in the electrode body 14 and the electrode body 18, and the electrode body 14 and the electrode body 18 are formed through the through hole 30. It may be configured such that the gap is held by the clamping means 32.

  Further, as in the semiconductor laser module 10 shown in FIG. 7, the semiconductor laser element 12 and the conductive plates 16 and 20 are arranged so as to be biased between the upper and lower electrode bodies 14 and 18 (in FIG. 7, they are biased to the left side). An insulating plate 40 is arranged next to the semiconductor laser element 12, and the semiconductor laser element 12 and the conductive plates 16 and 20 are sandwiched between the upper and lower electrode bodies 14 and 18 together with the insulating plate 40. It is good.

  The insulating plate 40 is for defining the insulation between the electrode body 14 (positive electrode) and the electrode body 18 (negative electrode) and the interval when the both are sandwiched, and the material is, for example, aluminum nitride, silicon carbide, oxide It consists of aluminum.

  Further, in the semiconductor laser module 10 of the present invention shown in FIG. 1, the upper and lower electrode bodies 14 and 18 are provided with a refrigerant passage hole 24, and the refrigerant is supplied into the refrigerant passage hole 24 via the refrigerant supply means 26. Thus, the heat generated in the semiconductor laser element 12 is positively exhausted.

In addition, it does not specifically limit as a refrigerant | coolant, Any things, such as water, oil, and gas, may be sufficient. In FIG. 1, reference numeral 28 denotes a connection pipe 28 that connects the refrigerant feed hole 24 and the refrigerant supply means 26.
As mentioned above, although the preferable form of the semiconductor laser module 10 of this invention was demonstrated, this invention is not limited to said form.

  For example, in the semiconductor laser module 10 shown in FIG. 1, the protrusions 22 are provided on the lower surface and the upper surface of the conductive plate 16, and the four surfaces of the lower surface and the upper surface of the conductive plate 20, but as shown in FIG. The conductive plates 16 and 20 are provided with protrusions 22 only on the side in contact with the semiconductor laser element 12, or as shown in FIG. 8B, the lower surface 12a side of the semiconductor laser element 12 is formed on one side. Only the conductive plate 16 on the side of the upper surface 12b may be formed by using both the conductive plate 20 on both sides and the one on both sides for forming the protrusions 22 and the like.

  Further, in the semiconductor laser module 10 shown in FIG. 1, the insulating plates 40 are provided on the left and right sides of the semiconductor laser element 12, respectively, but penetrate the insulating plate 40 in the cross-sectional direction as shown in FIG. A recess 42 may be provided, and the semiconductor laser element 12 provided with the conductive plates 16 and 20 on the lower surface 12a and the upper surface 12b may be disposed in the recess 42.

  Further, in the present embodiment, the projections 22 provided on the conductive plates 16 and 20 have been described using a substantially triangular cross-section. However, the above-described projections 22 having a substantially triangular cross-section described above with the needle-like projections 22 are also described. If the same effect is obtained, various modifications can be made without departing from the object of the present invention, for example, the needle-like protrusion 22 can be adopted.

[Example 1]
As in the semiconductor laser module 10 of the present invention shown in FIG. 7, the semiconductor laser module 10 in which the electrode bodies 14 and 18 are provided on the lower surface 12a and the upper surface 12b of the semiconductor laser element 12 through the conductive plates 16 and 20 is used. Then, pulse vibration that instantaneously generates a large output was performed, the state of the semiconductor laser module 10 was confirmed every 1,000 times, and it was confirmed whether or not the output of the laser beam was stable.

The conductive plates 16 and 20 used are made of gold, have a thickness in the cross-sectional direction of 0.2 mm, and are provided with protrusions 22 having a height of 60 μm on the lower surface and the upper surface, respectively.
In the semiconductor laser module 10 of the present invention, even if pulse vibration is performed 20,000 times, no deterioration is confirmed on the joint surface between the semiconductor laser element 12 and the conductive plates 16 and 20, and the output of the laser beam is stable. It was confirmed that

[Comparative Example 1]
Like the conventional semiconductor laser module 200 shown in FIG. 11, the semiconductor laser module 200 in which the electrode plates 204 and 208 are provided on the lower surface 202a and the upper surface 202b of the semiconductor laser element 202 using the solder materials 206 and 210 is used. Similarly to Example 1, pulse oscillation that instantaneously generates a large output was performed, and the state of the semiconductor laser module 200 was checked every 1,000 times to check whether the output of the laser beam was stable.

  Then, when pulse vibration was performed 3,000 times, deterioration was confirmed on the joint surface between the semiconductor laser element 202 and the solder materials 206 and 210, and it was also confirmed that the output of the laser beam was unstable.

DESCRIPTION OF SYMBOLS 10 ... Semiconductor laser module 12 ... Semiconductor laser element 12a ... Lower surface 12b ... Upper surface 14 ... Electrode body 16 ... Conductive plate 18 ... Electrode body 20 ... Conductive plate 22 ... Projection 22a .. Tip 24 ... Water hole 26 ... Cooling water supply means 28 ... Connection pipe 30 ... Through hole 32 ... Holding means 40 ... Insulating plate 42 ... Concave A ... Area of the tip of the projection before being crushed B ... Area of the tip of the projection after being crushed T1 ..Thickness of the conductive plate before the projection is crushed T2 ..Semiconductor laser element and projection The total thickness of the two conductive plates before being crushed T3 ··· the thickness of the insulating plate H1 ··· the height of the protrusion before being crushed 100 ··· semiconductor laser module 102 · · · semiconductor laser element 102a ..Lower surface 102b ... Upper surface 104 ... Electrode plate 1 06 ... Solder material 108 ... Electrode body 110 ... Bonding wire 200 ... Semiconductor laser module 202 ... Semiconductor laser element 202a ... Lower surface 202b ... Upper surface 204 ... Electrode plate 206 ... Solder material 208 ... Electrode plate 210 ... Solder material

Claims (10)

A semiconductor laser element;
Electrode bodies joined to both the lower surface and the upper surface of the semiconductor laser element so as to be electrically connected to each other through a conductive member;
A semiconductor laser module comprising at least
The semiconductor laser module is:
The conductive member interposed between the semiconductor laser element and the electrode body is a conductive plate,
The conductive plate located on the lower surface of the semiconductor laser element and / or the conductive plate located on the upper surface of the semiconductor laser element,
A plurality of protrusions are provided on the surface to be bonded to the semiconductor laser element,
Furthermore, an insulating plate is disposed next to the semiconductor laser element in which the conductive plate is provided on the lower surface and the upper surface,
The semiconductor laser element provided with the conductive plate on the lower surface and the upper surface and the insulating plate are provided between the electrode body and the electrode body,
By sandwiching the electrode body and the electrode body with each other by sandwiching means, a semiconductor laser element having a conductive plate on the lower surface and the upper surface is sandwiched between the electrode body and the electrode body, thereby The tip of the plurality of protrusions of the plate is configured to be crushed by the semiconductor laser element,
Before clamping the electrode body and the electrode body with each other clamping means,
The thickness of the insulating plate in the cross-sectional direction is
The semiconductor laser element;
A conductive plate provided on the lower surface of the semiconductor laser element before the protrusions are crushed;
A conductive plate provided on the upper surface of the semiconductor laser element before the protrusions are crushed;
A semiconductor laser module characterized in that the thickness is set to be thinner than the total thickness in the cross-sectional direction.   2. The semiconductor laser module according to claim 1, further comprising a coolant supply unit that has a coolant passage hole formed in the electrode body and supplies the coolant into the coolant passage hole. Before clamping the electrode body and the electrode body with each other clamping means,
The thickness of the insulating plate in the cross-sectional direction is
The semiconductor laser element;
A conductive plate provided on the lower surface of the semiconductor laser element before the protrusions are crushed;
A conductive plate provided on the upper surface of the semiconductor laser element before the protrusions are crushed;
3. The semiconductor laser module according to claim 1, wherein the semiconductor laser module is set to be thinner within a range of 100 to 1000 μm than a total thickness in a cross-sectional direction. The conductive plate located on the lower surface of the semiconductor laser element and / or the conductive plate located on the upper surface of the semiconductor laser element,
A plurality of protrusions are provided on the surface to be joined to the electrode body,
By sandwiching the electrode body and the electrode body with each other by sandwiching means, a semiconductor laser element having a conductive plate on the lower surface and the upper surface is sandwiched between the electrode body and the electrode body, thereby 4. The semiconductor laser module according to claim 1, wherein tip portions of a plurality of protrusions of the plate are crushed by the semiconductor laser element and the conductive plate. After the tip of the projection is crushed by the vertically adjacent members,
When the conductive plate is a flat plate that does not have the protrusion, the ratio of the total area of the surface to be bonded to the semiconductor laser element is 100%.
The ratio of the total area of the tip portions of the plurality of protrusions on the side bonded to the semiconductor laser element of the conductive plate having the plurality of protrusions is in the range of 30 to 80%. The semiconductor laser module in any one of 1-4.   6. The semiconductor laser module according to claim 1, wherein the protrusion before the tip portion is crushed has a substantially circular or polygonal cross section.   The semiconductor laser module according to claim 1, wherein a height of the protrusion before the tip portion is crushed is in a range of 50 to 200 μm.   The semiconductor laser module according to claim 1, wherein a material of the conductive plate is gold.   9. The semiconductor laser module according to claim 1, wherein a thickness of the conductive plate in a cross-sectional direction before the protrusion is crushed is in a range of 0.2 to 0.5 mm. The insulating plate is provided with a recess penetrating in the cross-sectional direction,
The semiconductor laser module according to claim 1, wherein a semiconductor laser element having a conductive plate provided on the lower surface and the upper surface is disposed in the recess.

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