JP6448712B2 - Semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor device, a semiconductor device manufacturing apparatus, a semiconductor device manufacturing method, and a semiconductor module, and more particularly, a full mold in which a power semiconductor element is covered with a sealing body and electrically insulated from the outside. The present invention relates to a type semiconductor device, a semiconductor device manufacturing apparatus, a semiconductor device manufacturing method, and a semiconductor module.

  A semiconductor device that can handle large power is generally called a power device. Such a semiconductor device is required to have a high dielectric strength in order to handle high power.

  In a full mold type semiconductor device, the entire periphery of the power semiconductor element is covered with a sealing body having electrical insulation in order to realize high dielectric strength.

  Japanese Patent Application Laid-Open No. 2003-289085 describes a semiconductor device that is fastened and fixed to a heat radiating fin using screws, and is a full mold type semiconductor device in which a mounting hole is provided in a sealing resin.

JP 2003-289085 A

  However, in the conventional full mold type semiconductor device, there is a case where sufficient dielectric strength cannot be obtained.

  In general, a semiconductor device is connected and fixed to a heat radiator with screws or the like outside. At that time, when the lead electrically connected to the power semiconductor element or the die pad mounting the power semiconductor element is close to the heat radiator or the screw, the semiconductor device cannot obtain a sufficient dielectric strength. .

  The present invention has been made to solve the above-described problems. A main object of the present invention is to provide a semiconductor device having a high dielectric strength, a semiconductor device manufacturing apparatus, a semiconductor device manufacturing method, and a semiconductor module.

  A semiconductor device according to the present invention has a semiconductor element and a first surface and a second surface located opposite to the first surface, holds the semiconductor element on the first surface, and is electrically connected to the semiconductor element. And a sealing body that has electrical insulation and seals the semiconductor element and the frame. A through hole is formed in the sealing body, the through hole has a hole axis extending in a direction intersecting the first surface, and at least one of the first surface and the second surface of the frame adjacent to the through hole On one surface, a rectifying pattern is formed that restricts the flow direction of the flowable material to be the sealing body when the sealing body is formed.

  ADVANTAGE OF THE INVENTION According to this invention, the semiconductor device which has high dielectric strength, the manufacturing apparatus of a semiconductor device, the manufacturing method of a semiconductor device, and a semiconductor module can be provided.

1 is a cross-sectional view for explaining a semiconductor device according to a first embodiment. 4 is a top view for illustrating the semiconductor device according to the first embodiment. FIG. FIG. 10 is a cross-sectional view for explaining the semiconductor device according to the second embodiment. FIG. 6 is a top view for explaining a semiconductor device according to a third embodiment. FIG. 5 is a diagram for explaining an internal structure of a semiconductor device in a region V shown in FIG. 4. FIG. 6 is a cross-sectional view for explaining a semiconductor device according to a fourth embodiment. FIG. 9 is a cross-sectional view for explaining a semiconductor device according to a fifth embodiment. FIG. 10 is a block diagram for explaining a semiconductor device manufacturing apparatus according to a fifth embodiment; FIG. 10 is a cross-sectional view for explaining a semiconductor device manufacturing apparatus according to a fifth embodiment. 10 is a flowchart for explaining a method of manufacturing a semiconductor device according to a fifth embodiment. FIG. 10 is a cross-sectional view for explaining a modification of the semiconductor device manufacturing apparatus according to the fifth embodiment.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following drawings, the same or corresponding parts are denoted by the same reference numerals, and description thereof will not be repeated.

(Embodiment 1)
The semiconductor device according to the first embodiment will be described with reference to FIGS. The semiconductor device 100 according to the first embodiment includes a semiconductor element 1, a frame 2, and a sealing body 3.

  The semiconductor element 1 can be any power semiconductor element, but is, for example, an insulated gate bipolar transistor (IGBT) or a MOS field effect transistor (MOSFET). In the semiconductor device 100, a plurality of semiconductor elements 1 may be formed.

  The frame 2 has a first surface 2A and a second surface 2B located on the opposite side of the first surface 2A, holds the semiconductor element 1 on the first surface 2A, and is electrically connected to the semiconductor element 1 Has been. The frame 2 extends to the outside of a sealing body 3 to be described later, and plays a role of electrically connecting the semiconductor element 1 and the outside. The semiconductor device 100 according to the first embodiment may include a plurality of frames 2. The frame 2 has a connecting portion 7 (see FIG. 2) exposed from the sealing body 3 and an end 2E (see FIG. 1) covered with the sealing body 3. Although the material which comprises the flame | frame 2 can be made into the arbitrary materials which have electroconductivity, it is a material containing copper (Cu), for example. The frame 2 may have a die pad 5 (see FIG. 7) holding the semiconductor element 1 and a frame main body 6 (see FIG. 7) connected to the die pad 5. The connecting portion 7 may be provided so as to be bent in a direction perpendicular to the first surface 2A, or may be provided so as to extend on the same surface as the first surface 2A.

  The sealing body 3 has electrical insulation. The sealing body 3 physically and chemically protects the semiconductor element 1 and at least a part of the frame 2 by covering them. The material constituting the sealing body 3 may be any material that has electrical insulation and fluidity under predetermined conditions, and is, for example, an epoxy resin. The sealing body 3 can be formed by, for example, a transfer mold method.

  The outer peripheral surface of the sealing body 3 has an upper surface 3A positioned above the semiconductor element 1 and the frame 2, a lower surface 3B positioned below them, and a side end surface 3C connecting the upper surface 3A and the lower surface 3B. Yes. The upper surface 3A and the lower surface 3B are formed along the first surface 2A of the frame 2, and are preferably formed to be parallel to the first surface 2A. The sealing body 3 is formed with a through hole 4 extending from the upper surface 3A to the lower surface 3B. That is, the hole axis of the through hole 4 extends in a direction intersecting with the first surface 2A. Preferably, the hole axis of the through hole 4 is provided perpendicular to the first surface 2A. The hole axis means an axis that passes through the center of the through hole 4 and extends along the through hole 4.

  The through hole 4 only needs to have an arbitrary shape. For example, a part of the through hole having a predetermined shape is filled with the sealing body 3. The through-hole 4 is, for example, a circular shape having a hole diameter H2 (radius H1), and a semicircular shape in which a half region inside a general through-hole formed in a conventional power semiconductor device is filled with a sealing body 3 have. In this case, the planar shape of the through hole 4 has one side having a length equivalent to the hole diameter H2 and a semicircular arc having a radius H1.

  In the through hole 4, one side having a length equivalent to the hole diameter H <b> 2 may be formed at a position closest to the frame 2. From a different point of view, the through hole 4 of the semiconductor device 100 according to the first embodiment is formed at a position overlapping a part (for example, half) of a general through hole of the conventional power semiconductor device, and the frame. 2 may have a shape in which a portion close to 2 (a portion including a region having the shortest distance from the frame 2 on the inner peripheral end face of the through hole) is filled with the sealing body 3. .

  The hole diameter H2 of the through hole 4 can be arbitrarily determined regardless of the diameter of the shaft of the fixing member 12 (for example, the effective diameter of the screw). The hole diameter H2 of the through hole 4 may be the same as or shorter than the diameter of the shaft of the fixing member 12.

  The through hole 4 is formed in a region that does not overlap the frame 2. At this time, the inner peripheral end face 4E of the sealing body 3 exposed inside the through hole 4 and the end 2E of the frame 2 are separated by a predetermined distance.

  In the semiconductor device 100, a pressing member 13 that presses the upper surface 3 </ b> A of the sealing body 3 from above is fixed to the heat dissipating body 11 placed in contact with the lower surface 3 </ b> B of the sealing body 3 by the fixing member 12. The semiconductor module 500 is configured. The radiator 11 is formed with a hole capable of fixing the fixing member 12 at a position corresponding to the through hole 4. The fixing member 12 may be made of a conductive material, for example, a screw made of steel. The hole of the radiator 11 is a screw hole provided so that the fixing member 12 can be tightened. In the pressing member 13, a hole through which the fixing member 12 can be passed is formed at a position corresponding to the through hole 4. The pressing member 13 is a leaf spring, for example.

  In the semiconductor device 100 according to the first embodiment, the fixing member 12 is connected and fixed to the radiator 11 and is provided so as to connect the pressing member 13 outside the semiconductor device 100. The through hole 4 is not a hole through which the fixing member 12 is passed. Therefore, as described above, the radius H1 of the through hole 4 can be arbitrarily determined regardless of the effective diameter of the fixing member 12 or the like.

  The through-hole 4 overlaps the pressing member 13 when the pressing member 13 is fixed to the radiator 11 by the fixing member 12 and the semiconductor device 100 is sandwiched between the radiator 11 and the pressing member 13. In the position. The hole diameter H2 of the through hole 4 can be set to be approximately equal to the width (width in the short direction) of the pressing member 13, for example.

  Next, a method for manufacturing the semiconductor device 100 according to the first embodiment will be described. The manufacturing method of the semiconductor device 100 according to the first embodiment can be any method as long as the through-hole 4 can be formed in the sealing body 3, for example, the flow to be the sealing body 3. This is a transfer molding method in which a thermosetting resin is supplied into a mold as a functional material.

  First, the sealing object material 8 provided with the semiconductor element 1 and the frame 2 holding the semiconductor element 1 on the surface is prepared. In the sealing target material 8, the semiconductor element 1 and the frame 2 are electrically connected. Next, a mold is prepared. The mold is a space surrounded by an inner peripheral surface corresponding to the outer peripheral surface (upper surface 3A, lower surface 3B, side end surface 3C) of the sealing body 3 and a structure corresponding to the inner peripheral end surface 4E of the through hole 4. It is provided so that the sealing object material 8 can be hold | maintained in the said space. The mold has a connection path connecting the space and the outside of the mold.

  Next, a fluid material (hereinafter referred to as fluid material) to be a sealing body is supplied into the mold. The fluid material is, for example, an epoxy resin. The flowable material is filled into the space inside the mold in which the sealing target material 8 is held through a connection path provided in the mold. The filling of the flowable material is performed until there is no void in the mold.

  Next, the fluid material is heated and cured. Thereby, the semiconductor device 100 in which the sealing target material 8 is covered with the sealing body 3 and the through hole 4 is formed in the sealing body 3 can be obtained.

  Next, functions and effects of the semiconductor device 100 according to the first embodiment will be described. The semiconductor device 100 has a semiconductor element 1 and a first surface 2A, holds the semiconductor element 1 on the first surface 2A, and is electrically insulated from the frame 2 electrically connected to the semiconductor element 1. And a sealing body 3 that seals the semiconductor element 1 and the frame 2. A through hole 4 is formed in the sealing body 3, and the through hole 4 has a hole axis extending in a direction intersecting the first surface 2 </ b> A and is exposed to the inside of the through hole 4. 3, the inner peripheral end face 4E is inclined with respect to the hole axis.

  The through hole 4 is not a hole into which the fixing member 12 for fixing the semiconductor element 1 to the heat radiating body 11 is inserted and tightened, and the fixing member 12 is provided outside the sealing body 3 of the semiconductor element 1. Therefore, the distance between the end 2E of the frame 2 and the fixing member 12 can be increased. Thereby, the dielectric strength of the semiconductor element 1 can be improved compared with the conventional power semiconductor element which uses the through-hole 4 formed in the sealing body 3 as the insertion hole of the fixing member 12.

  Further, the inner peripheral end surface 4E of the through hole 4 is a surface having one side having a length equal to the radius H1, and the inner peripheral end surface 4E is exposed facing the opposite side with respect to the frame 2 inside the through hole 4. In this case, the shortest distance L1 between the end 2E of the frame 2 and the inner peripheral end face 4E of the through hole 4 can be increased.

  Note that the through-hole 4 is formed when the pressing member 13 is fixed to the heat radiating body 11 by the fixing member 12 and the semiconductor device 100 is sandwiched between the heat radiating body 11 and the pressing member 13. It is provided in the position which overlaps. Therefore, the through hole 4 can function as a guide used when the semiconductor device 100 is positioned with respect to the pressing member 13 connected to the radiator 11 via the fixing member 12. In particular, when the hole diameter H2 of the through hole 4 is set to be approximately equal to the width of the pressing member 13 (width in the short side direction), the through hole 4 is completely below the pressing member 13 when the semiconductor module 500 is viewed from above. By designing the semiconductor module 500 so as not to be exposed, alignment can be performed more easily during assembly. The through hole 4 is formed to extend from the upper surface 3A to the lower surface 3B side by a predetermined distance, and does not have to penetrate to the lower surface 3B. In other words, the through hole 4 may be formed as a recess with respect to the upper surface 3A. In this case, the through hole 4 as a recess has a bottom surface made of the sealing body 3, but preferably the distance between the top surface 3A and the bottom surface is shorter than the distance between the frame 2 and the top surface 3A in the semiconductor device 100. Is provided. Even in this case, it is possible to obtain the semiconductor device 100 that has high dielectric strength and can be easily positioned when the semiconductor module 500 is assembled.

(Embodiment 2)
Next, the semiconductor device 100 according to the second embodiment will be described with reference to FIG. The semiconductor device 100 according to the second embodiment has basically the same configuration as that of the semiconductor device 100 according to the first embodiment, but the through hole 4 is a hole through which the fixing member 12 is passed. The inner peripheral end face 4 </ b> E of the sealing body 3 exposed inside is different in that it is inclined with respect to the hole axis of the through hole 4.

  The hole axis of the through hole 4 only needs to extend in an intersecting direction with an arbitrary angle with respect to the first surface 2A of the frame 2. For example, the first surface 2A of the frame 2 and the sealing body 3 The upper surface 3A and the lower surface 3B are parallel to each other, and are formed to extend in a direction perpendicular thereto.

  The inner peripheral end surface 4E of the through-hole 4 is not perpendicular to the upper surface 3A that does not contact the radiator 11 in the sealing body 3 and the lower surface 3B that contacts the radiator 11 in the sealing body 3, and has a predetermined angle. Is inclined. It is preferable that the inner circumferential end surface 4E is provided so that the angle intersecting the upper surface 3A is an obtuse angle and the angle intersecting the lower surface 3B is an acute angle. From a different point of view, it is preferable that the inner peripheral end surface 4E is provided so that the opening area of the through hole 4 on the upper surface 3A is larger than the opening area of the through hole 4 on the lower surface 3B. In addition, the dimension of the through hole 4 on the lower surface 3 </ b> B is set to be equal to or larger than the dimension of the shaft of the fixing member 12.

  In this way, even if the opening area of the through hole 4 on the upper surface 3A is provided equivalent to the through hole for passing the fixing member provided in the conventional power semiconductor device, the inner periphery of the through hole 4 The shortest distance L1 between the end portion 2E of the frame 2 and the inner peripheral end surface 4E is increased as compared with the conventional power semiconductor device in which the end surface 4E extends in a direction perpendicular to the upper surface 3A and the lower surface 3B. be able to. As a result, even when the fixing member 12 is passed through the through hole 4, the distance between the end 2E of the frame 2 and the fixing member 12 is the same as that of the conventional power semiconductor device, but is provided between them. Since the sealing body 3 can be formed thicker, the dielectric strength of the semiconductor device 100 can be increased.

  In the semiconductor device 100, the frame 2 is preferably provided in a half region located on the lower side in the vertical direction. In this way, the shortest distance L1 between the end 2E of the frame 2 and the inner peripheral end face 4E of the through hole 4 can be increased, and the dielectric strength of the semiconductor device 100 can be increased.

  The entire fixing member 12 including the head may be accommodated inside the through hole 4, or the head may protrude outside the through hole 4. Further, for example, the shaft of the fixing member 12 may be formed so as to extend along the inner peripheral end face 4 </ b> E of the through hole 4.

  In addition, since the semiconductor device 100 according to the second embodiment is connected and fixed to the radiator 11 by the fixing member 12 inserted into the through hole 4, the pressing member 13 can be omitted.

(Embodiment 3)
Next, the semiconductor device 100 according to the third embodiment will be described with reference to FIGS. The semiconductor device 100 according to the third embodiment has basically the same configuration as the semiconductor device 100 according to the second embodiment, but the sealing body 3 is formed on the first surface 2A of the frame 2 adjacent to the through hole 4. Is different in that a rectifying pattern 20 is formed that restricts the flow direction of the flowable material that is to become the sealing body 3.

  A plurality of rectification patterns 20 are provided on the first surface 2 </ b> A of the frame 2. Each rectification pattern 20 is provided independently of each other with a predetermined interval. Each rectification pattern 20 is provided so as to protrude from the first surface 2A of the frame 2 in a direction perpendicular to the first surface 2A, and toward the end 2E of the frame 2 located in the vicinity of the through hole 4. It is provided to extend. Note that the rectifying pattern 20 can have any shape as long as the flow direction of the flowable material can be limited.

  In this way, when supplying the fluid material to be the sealing body 3 to the space inside the mold in which the sealing target material 8 including the semiconductor element 1 and the frame 2 is held, the fluid material The flow direction is limited by the rectification pattern 20. At this time, the fluid material is guided to the rectification pattern 20 formed to extend toward the end 2E of the frame 2 located in the vicinity of the region where the through hole 4 is formed, and flows in the mold. . As a result, the shortest distance L1 between the frame 2 and the inner peripheral end surface 4E of the through hole 4 is longer than that of the conventional semiconductor device, so that the fluid material to be the sealing body 3 flows along the frame 2. Even if the distance is shortened, a change in the flow direction of the flowable material can be suppressed. In other words, the rectifying pattern 20 formed on the frame 2 may play a role of controlling the flow direction of the flowable material to be a sealing body in the resin sealing process that the frame has been performed in the conventional semiconductor device. Therefore, even if the length of the frame 2 itself is shortened, the fluid material can efficiently flow around the through hole 4. Thereby, the semiconductor device 100 has high dielectric strength and can improve the moldability of the through hole 4.

  The planar shape of the first surface 2A of the frame 2 can take any shape. For example, when the semiconductor device 100 is viewed from the upper surface 3A side, the frame 2 has an end 2E including two sides facing the through hole 4 provided in a circular shape, and the two sides are orthogonal to each other. It may be provided as follows.

  In this case, since the shortest distance L1 between the frame 2 and the inner peripheral end surface 4E of the through hole 4 is longer than that of the conventional semiconductor device as described above, the fixing member 12 is inserted into the through hole 4 to form the heat radiator 11 or the like. Even when the tightening semiconductor element 1 is fixed, the distance between the frame 2 and the fixing member 12 is not less than the shortest distance L1. Therefore, the semiconductor device 100 can have a high dielectric strength. Further, in most of the region where the frame 2 and the inner peripheral end surface 4E of the through hole 4 are opposed to each other with the sealing body 3 therebetween, the distance between the two is longer than the shortest distance L1, so that dielectric breakdown occurs. Risk can be further reduced.

  The rectifying pattern 20 may be formed on at least one of the first surface 2A and the second surface 2B of the frame 2. Further, when the frame 2 includes the die pad 5 (see FIG. 7) and the frame main body portion 6, it is sufficient that the frame 2 is formed on at least one of the die pad 5 and the frame main body portion 6 adjacent to the through hole 4. It suffices to be formed on at least one of the surfaces.

(Embodiment 4)
Next, a semiconductor device 100 according to the fourth embodiment will be described with reference to FIG. The semiconductor device 100 according to the fourth embodiment has basically the same configuration as the semiconductor device 100 according to the second embodiment, but the inner peripheral end surface 4E of the sealing body 3 exposed inside the through hole 4. Is different in that the end 2E of the frame 2 arranged opposite to the frame 2 is bent in a direction intersecting the first surface 2A.

  The frame 2 has a structure in which a conductive member provided in a plate shape is bent upward or downward at a point separated from the end 2E by a predetermined distance (hereinafter referred to as a bending point). The conductive member constituting the frame 2 may have the same configuration as that of the frame in the conventional semiconductor device in a state where it is not bent, and specifically may have the same dimensions. . Even in this case, when the frame 2 is viewed in plan, the shortest distance from the bending point to the point where the end 2E is located in the frame 2 is the bending portion positioned from the bending point of the frame 2 to the end 2E. Since it corresponds to the length of the base of the triangle that is the hypotenuse, it is shorter than the length from the bending point to the end 2E, that is, the shortest distance in the conventional unbent frame. Therefore, when the fixing member 12 is provided in the through hole 4 and the semiconductor device 100 is fixed to the radiator 11 or the like, the through hole 4 and the fixing member 12 having the same dimensions as those of the conventional semiconductor device are used. Even so, the shortest distance between the frame 2 and the fixing member 12 can be increased, and the dielectric strength of the semiconductor device 100 can be increased.

  The shape of the bent portion of the frame 2 may be any shape, and may be bent downward, for example, or may be bent perpendicular to the first surface 2A. Even in this case, the end 2E of the frame 2 can be sufficiently separated from the fixing member 12 disposed in the through hole 4 as compared with the conventional semiconductor device. As a result, the dielectric strength can be increased without changing the dimensions of the conventional semiconductor device.

  In the semiconductor device 100 according to Embodiments 2 to 4 described above, the semiconductor module 500 is fixed to the radiator 11 only by the fixing member 12 without using the pressing member 13, but is limited to this. It is not a thing. The semiconductor device 100 according to each embodiment may be configured as the semiconductor module 500 using the pressing member 13 in the same manner as the semiconductor device 100 according to the first embodiment.

(Embodiment 5)
Next, a semiconductor device 200 according to the fifth embodiment will be described with reference to FIG. A semiconductor device 200 according to the fifth embodiment includes a semiconductor element 1, a frame 2, and a sealing body 3 that seals the semiconductor element 1 and the frame 2. The frame 2 includes a die pad 5 holding at least one semiconductor element 1 on the surface, and a frame body 6 connected to the die pad 5, and is electrically connected to the semiconductor element 1.

  In the semiconductor device 200, the die pad 5 is located below the frame main body 6 in the vertical direction and is connected to the frame main body 6. The die pad 5 has a first end portion 51 located on the connection portion side with the frame main body portion 6 and a second end portion 52 located on the opposite side of the first end portion 51.

  The die pad 5 may not be provided in parallel with the frame main body 6 or the lower surface 3B of the sealing body 3. That is, the second end portion 52 may be located closer to the frame main body portion 6 than the first end portion 51 in the direction perpendicular to the frame main body portion 6, or may be located on the side away from the first main end portion 51. . At this time, the frame 2 is provided such that the second end 52 of the die pad 5 is in a predetermined positional relationship with respect to the first end 51 in a direction perpendicular to the frame body 6.

  Specifically, the second end 52 may be provided closer to the frame body 6 than the first end 51 in the direction perpendicular to the frame body 6 with an upper limit of 50 μm. The second end portion 52 may be provided so as to be spaced apart from the first end portion 51 with an upper limit of 100 μm in a direction away from the frame main body portion 6. In other words, in the direction perpendicular to the frame body 6 (the vertical direction when the semiconductor device 200 is assembled), the point where the first end 51 is located is set as the zero point and the side away from the frame body 6 is positive. In this case, the second end portion 52 is provided in a range of −50 μm to 100 μm (range t3 in FIG. 7).

  The semiconductor device 200 according to the fifth embodiment is configured such that the frame main body 6 and the lower surface 3B of the sealing body 3 in the frame 2 are substantially parallel. At this time, the shortest distance between the second end portion 52 of the die pad 5 and the outer peripheral surface of the sealing body 3 is the shortest distance t2 between the second end portion 52 and the lower surface 3B, and the first end portion 51 and the sealing body. 3 or more and a lower limit distance that is 100 μm shorter than the shortest distance t1 between the outer peripheral surface (lower surface 3B) and the upper limit distance that is 50 μm longer than the shortest distance t1 between the first end portion 51 and the outer peripheral surface (lower surface 3B) of the sealing body 3 Become.

  The shortest distance between the first end 51 of the die pad 5 and the outer peripheral surface of the sealing body 3 is the shortest distance t1 between the first end 51 and the lower surface 3B. The shortest distance t1 between the first end portion 51 and the lower surface 3B can be set to a value similar to that of the conventional semiconductor device, and is, for example, 500 μm or more. When the shortest distance t1 between the first end 51 and the lower surface 3B is 500 μm, the shortest distance t2 between the second end 52 and the lower surface 3B can be 400 μm or more and 550 μm or less.

  That is, the semiconductor device 200 according to the fifth embodiment includes the frame 2 provided so that the first end 51 and the second end 52 of the die pad 5 have the above-described relative distance relationship.

  Here, in the frame used in the conventional semiconductor device, the second end of the die pad is not provided closer to the frame body than the first end in the direction perpendicular to the frame body. . In other words, the die pad in the conventional frame has a lower limit of 0 μm overlapping the first end in the direction perpendicular to the frame main body, and an upper limit of 150 μm, for example, in the direction away from the frame main body from the first end. It was provided to be separated as a value. In this case, it is difficult to increase the dielectric strength by increasing the shortest distance between the second end portion and the lower surface of the sealing body without increasing the thickness of the sealing body.

  On the other hand, the frame 2 used in the semiconductor device 200 increases the thickness of the sealing body 3 because the first end 51 and the second end 52 of the die pad 5 have the above relationship. The shortest distance t2 between the second end portion 52 and the lower surface 3B of the sealing body 3 can be increased without any problem. As a result, the package insulation failure rate of the semiconductor device 200 can be reduced.

  Next, a semiconductor device manufacturing apparatus 300 (hereinafter simply referred to as a manufacturing apparatus) according to the fifth embodiment will be described with reference to FIGS. The manufacturing apparatus 300 is used for manufacturing the semiconductor device 200 according to the fifth embodiment. Specifically, the manufacturing apparatus is used when the sealing body 3 is formed so as to cover the sealing target material 8 including the semiconductor element 1 and the frame 2. The manufacturing apparatus 300 includes a mold 21, a supply unit 30 for supplying a fluid material to be the sealing body 3, and a control unit 40 that controls the mold 21 and the supply unit 30.

  In the mold 21, a space S in which the sealing target material 8 is disposed and a connection path 22 for connecting the space S and the outside are formed inside. At this time, the mold 21 can hold the sealing target material 8 in which the die pad 5 is positioned above the frame body 6 in the vertical direction in the space S. That is, the mold 21 can hold the sealing target material 8 in which the die pad 5 is positioned above the frame main body 6 in the vertical direction in the space S. At this time, referring to FIG. 9, the connection path 22 may be provided along the extending direction of the frame 2 when the sealing target material 8 is disposed in the mold 21, for example. The connection path 22 shown in FIG. 9 is formed to extend in the horizontal direction. The mold 21 is composed of, for example, an upper mold and a lower mold, and the space S is a region surrounded by the end surface 21A of the upper mold and the end surface 21B of the lower mold.

  The supply unit 30 supplies the fluid material to be the sealing body 3 to the space S through the connection path 22 of the mold 21. The control unit 40 controls the mold 21 and the supply unit 30. Specifically, for example, the heating condition and the pressurizing condition for the mold 21 and the supply amount of the fluid material to be the sealing body are controlled.

  Next, with reference to FIGS. 8-10, the manufacturing method of the semiconductor device which concerns on Embodiment 5 is demonstrated. In the method for manufacturing a semiconductor device according to the fifth embodiment, a sealing target material 8 including a semiconductor element 1 held by a die pad 5 and a frame 2 having the die pad 5 is sealed with a sealing body 3. This is a method for manufacturing a semiconductor device, and is performed using the semiconductor device manufacturing apparatus 300 according to the fifth embodiment described above.

  First, the sealing target material 8 is arranged in the mold 21 so that the die pad 5 is positioned above the frame body 6 in the vertical direction (step (S10)). In other words, the sealing target material 8 disposed and held in the mold 21 is disposed such that the semiconductor element 1 and the frame 2 are turned upside down with respect to those in the semiconductor device 200. Thereby, since the sealing target material 8 is arranged so that the die pad 5 is positioned above the frame body 6 in the vertical direction, the second end 52 of the die pad 5 receives the gravity and receives the first end. It is located vertically below 51, that is, on the frame body 6 side. In the frame 2, the distance between the second end 52 of the die pad 5 and the frame body 6 in the direction perpendicular to the frame body 6 at this time is greater than the distance between the first end 51 and the frame body 6. Is also set to be equal to or longer than the lower limit distance of 50 μm. In other words, when the sealing target material 8 is disposed on the mold 21, the shortest distance between the end surface 21 </ b> A of the upper mold of the mold 21 and the second end portion 52 of the die pad 5 is the end surface 21 </ b> A and the first end portion. 51 so as to be longer than the shortest distance to 51.

  Next, after introducing a fluid material to be the sealing body 3 into the mold 21 in which the sealing target material 8 is arranged, the sealing body 3 solidifies the material to be sealed. The material 8 is sealed (step (S20)). The material to be the sealing body 3 is, for example, an epoxy resin, and is introduced into the space S from the direction of the arrow A through the connection path 22. At this time, in the space S of the mold 21, the second end portion 52 of the die pad 5 is disposed closer to the frame main body portion 6 than the first end portion 51 by the previous step (S <b> 10). Therefore, in this step (S20), the flowable material to be the sealing body 3 is introduced and cured around the sealing target material 8 in such a state, whereby the die pad is obtained in the semiconductor device 200 obtained. The shortest distance t2 between the second end portion 52 and the lower surface 3B of the sealing body 3 can be 50 μm longer than the shortest distance t1 between the first end portion 51 and the lower surface 3B of the sealing body 3. . That is, by this step (S20), the shortest distance between the upper end surface 21A of the upper mold of the mold 21 and the second end 52 of the die pad 5 is the lower surface 3B of the sealing body 3 and the second end 52 of the die pad 5. The shortest distance t2 between the upper end surface 21A of the upper mold of the mold 21 and the first end 51 is the shortest distance t1 between the lower surface 3B of the sealing body 3 and the first end 51 of the die pad 5. Therefore, the shortest distance t2 between the second end portion 52 of the die pad 5 and the lower surface 3B of the sealing body 3 is 50 μm longer than the shortest distance t1 between the first end portion 51 and the lower surface 3B of the sealing body 3. The semiconductor device 200 can be obtained.

  As a result, in the sealing step (S20), even if the second end portion 52 of the die pad 5 receives the weight of the semiconductor element 1 or its own weight and deforms downward in the vertical direction, the second end portion 52 of the die pad 5 Since the shortest distance from the lower surface 3B of the sealing body 3 can be prevented, a decrease in the dielectric strength of the semiconductor device 200 can be prevented.

  In addition, as described above, the semiconductor device 200 according to the fifth embodiment is provided so that the second end 52 is spaced apart from the first end 51 in the direction away from the frame body 6 with an upper limit of 100 μm. However, such a semiconductor device 200 can also be obtained by the method for manufacturing a semiconductor device according to the fifth embodiment. In this case, for example, when the sealing target material 8 is arranged in the mold 21 in the step (S10), the point where the first end portion 51 is positioned in the vertical direction is set as a zero point and the lower side is set as positive. It is sufficient that the two end portions 52 are provided in a range of −50 μm or more and 100 μm or less. In this case, the shortest distance t2 between the second end 52 of the die pad 5 and the lower surface 3B of the sealing body 3 is shorter than the shortest distance t1 between the first end 51 and the lower surface 3B of the sealing body 3. Even if it exists, the semiconductor device 200 by which the difference (t1-t2) of both distances is suppressed to 100 micrometers or less can be obtained.

  In the manufacturing apparatus 300 according to the fifth embodiment, the connection path 22 is provided along the direction in which the frame 2 extends, but is not limited thereto. Referring to FIG. 11, connection path 22 may be provided vertically above space S in mold 21, for example. Even in this case, the fluid material is supplied in the direction of the arrow A into the space S of the mold 21 in a state where the second end 52 of the die pad 5 is disposed vertically below the first end 51. Therefore, the same effect as the manufacturing apparatus 300 according to the fifth embodiment can be obtained. Preferably, the connection path 22 is provided in the mold 21 (for example, the upper mold) so as to be located immediately above the die pad 5. In this way, when the fluid material is supplied downward from the vertical direction, the die pad 5 is pressed downward by the fluid material, so the second end 52 of the die pad 5 and the sealing body 3 can be more reliably suppressed from approaching the lower surface 3B. As a result, it is possible to obtain the semiconductor device 200 having a high dielectric strength and a reduced package insulation defect rate. In this case, the mold 21 may be a split mold having a dividing surface, for example.

  Although the embodiment of the present invention has been described above, the above-described embodiment can be variously modified. The scope of the present invention is not limited to the above-described embodiment. The scope of the present invention is defined by the terms of the claims, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

  The present invention is particularly advantageously applied to a full mold type semiconductor device.

  DESCRIPTION OF SYMBOLS 1 Semiconductor element, 2 frame, 2A 1st surface, 2B 2nd surface, 2E end part, 3 sealing body, 3A upper surface, 3B lower surface, 3C side end surface, 4 through-hole, 4E inner peripheral end surface, 5 die pad, 6 Frame body part, 7 connection part, 8 sealing target material, 11 heat radiating body, 12 fixing member, 13 pressing member, 20 rectification pattern, 21 mold, 22 connection path, 30 supply part, 40 control part, 51 1st end Part, 52 second end part, 100, 200 semiconductor device, 300 manufacturing apparatus, 500 semiconductor module.

Claims (1)

A semiconductor element;
A frame having a first surface and a second surface located opposite to the first surface, holding the semiconductor element on the first surface, and being electrically connected to the semiconductor element;
A semiconductor device having electrical insulation and comprising a sealing body that seals the semiconductor element and the frame,
A through hole is formed outside the end of the frame in the sealing body,
The through-hole has a hole axis extending in a direction intersecting the first surface, and the through-hole is a hole in which a fixing member connected to a radiator is inserted,
A rectification pattern is formed on the first surface of the frame adjacent to the through hole to restrict the flow direction of the flowable material to be the sealing body when forming the sealing body ,
The rectification pattern is provided so as to extend toward an end of the frame,
An end of the frame includes two sides facing the through hole, and is provided so that the two sides are orthogonal to each other .

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