JP6444268B2 - Solar cell and method for manufacturing solar cell - Google Patents

Description

  The present invention relates to a solar cell and a method for manufacturing a solar cell, and more particularly to a back electrode.

  2. Description of the Related Art Conventionally, there is a solar cell module in which a plurality of solar cells having element electrodes on a light receiving surface side and a back surface side are arranged side by side, and the light receiving surface side and the back surface side are sealed with glass and a resin film. In order to connect in series a solar cell that is a photoelectric conversion element that receives light and generates power and another solar cell adjacent to the solar cell, the other solar cell adjacent to the light-receiving surface electrode of one solar cell An inter-element connector that electrically connects the back electrode is used.

  The photoelectric conversion element utilizes the internal photoelectric effect of the semiconductor substrate. Since a semiconductor substrate used for a photoelectric conversion element has a relatively low conductivity compared to a metal, resistance loss increases when a distance of current flowing through the semiconductor substrate is long. In addition, if the distance that the minority carriers move in the semiconductor substrate is long, the extraction current to the outside of the semiconductor decreases due to the deactivation of the photogenerated carriers.

  Therefore, a general photoelectric conversion element is formed on a semiconductor substrate using a metal electrode or a translucent electrode as an element electrode, thereby taking out carriers in the semiconductor substrate at a short distance and ensuring conductivity in the in-plane direction. It has a structure. However, in the structure where the metal electrode is used for carrier extraction and in-plane conduction, the light receiving surface side is separated by a certain distance so that the device electrode does not cover the entire semiconductor substrate in consideration of light loss due to the electrode shadow. The structure is widely distributed over the entire surface of the semiconductor substrate. Here, the structure in which the device electrodes are widely distributed is approximately equal to or less than the diffusion length of minority carriers in the substrate, and the current collecting resistance from the semiconductor substrate to the device electrode is comparable to the current collecting resistance of the device electrode itself. A structure in which element electrodes that are in direct contact with the semiconductor substrate are distributed over the entire surface of the semiconductor substrate at intervals as described below.

  In the above structure, since the semiconductor substrate has a much lower conductivity than the metal, in the part where there is no element electrode, the current flows through the element and reaches the element electrode part. Since the resistance of the semiconductor substrate itself is added and the resistance loss in the semiconductor substrate increases, it is preferable to reduce the distance between the element electrodes from the viewpoint of resistance. On the other hand, when the electrode interval is narrow, the electrode shadow area increases on the light receiving surface side, and the amount of incident light decreases.

  Even on the back surface side, the recombination speed of the carrier is increased at the portion where the semiconductor substrate and the metal are in contact with each other, so that the contact area between the element electrode and the semiconductor substrate is preferably small. Therefore, in terms of optical characteristics and recombination speed in the semiconductor substrate, it is necessary to reduce the distance between the device electrodes and the contact area between the device electrodes and the semiconductor substrate both on the light receiving surface side and on the back surface side. From the viewpoint of these resistance, optical characteristics, and recombination speed, the element electrode interval and the contact area between the element electrode and the semiconductor substrate have appropriate values in order to maximize the photoelectric conversion efficiency. However, for the parts other than the electrodes, dangling bonds are generated on the semiconductor substrate surface as it is or disorder of the crystal periodicity occurs, and recombination loss due to the presence of defect levels accompanying these occurs, Covering with a passivation film that reduces the recombination rate on the surface of the semiconductor substrate is necessary for high efficiency. As described above, the portion other than the contact portion, which is a contact portion between the semiconductor substrate and the metal electrode for taking out current from the semiconductor substrate, covers the surface of the semiconductor substrate with a passivation film that sufficiently reduces the carrier recombination rate at the interface. The photoelectric conversion efficiency can be improved by covering.

  Due to these factors, the element electrode is widely distributed over the entire semiconductor substrate on the light-receiving surface and back surface side of the semiconductor substrate, and the double-sided passivation structure in which the surface of the semiconductor substrate other than the element electrode formation region is covered with a passivation film is more There was an advantage that the photoelectric conversion efficiency was higher than that of a structure in which element electrodes are formed on the entire back surface of the semiconductor substrate. However, on the other hand, the double-sided passivation type solar cell described above has a problem that the current collection resistance is large because the area of the electrode is small compared to the structure in which the electrode is provided on the entire back surface side of the semiconductor substrate.

  In addition, as a general method for manufacturing a device electrode of a solar cell, glass frit is contained in the device electrode formation region from above the passivation film by utilizing the fact that a glass component erodes the passivation film at a high temperature. A method of screen printing silver Ag paste and baking at a high temperature is the mainstream. In this method, the glass frit in the silver paste erodes and opens the passivation film by firing only in the element electrode formation region, thereby establishing electrical connection between the silver electrode as the element electrode and the semiconductor substrate. Further, in this method, since the opening is performed in a self-aligned manner, alignment is not required, so that a region other than the element electrode that is not covered with the passivation film cannot be formed, and a decrease in photoelectric conversion efficiency can be prevented. In addition, since the semiconductor substrate and the device electrode are connected by a glass frit, and silver, which is an electrode metal constituting the device electrode, has a particle shape, no peeling occurs even in a structure having a thickness of about 10 μm or more. It can be easily formed. Therefore, since the electrode shadow and the contact area between the semiconductor substrate and the device electrode can be reduced without increasing the current collecting resistance on the device, the above method contributes to the improvement of the photoelectric conversion efficiency of the solar cell.

  However, in a double-sided passivation type solar cell, the element electrode is not formed on the entire semiconductor substrate, but on only a part of the surface, even on the back surface side, which is a non-light-receiving surface where the amount of incident light is small. Moreover, also on the back surface side, in order to increase the photoelectric conversion efficiency, the contact area between the element electrode and the semiconductor substrate is preferably smaller than the area of the passivation film covering the back surface side of the semiconductor substrate. Therefore, there is a problem that the region of the device electrode is narrower and the current collecting resistance is larger than when the device electrode is formed on the entire semiconductor substrate.

  Therefore, Patent Document 1 discloses a method of reducing current collecting resistance by stacking glass frit electrodes in two layers as current collecting electrodes on an element in a double-sided passivation type solar cell. In the above configuration, the electrode height can be increased by forming the device electrode into two layers and including the first layer glass frit electrode and the second layer glass frit electrode.

  Patent Document 2 discloses a method of bonding a metal foil to the back surface side of an element electrode of a semiconductor substrate with an adhesive in a double-sided passivation type solar cell.

International Publication No. 2014/098016 Japanese Patent Application Laid-Open No. 2014-075505

  However, even when the current collecting electrode is formed in two layers as in Patent Document 1, there is a problem that the current collecting resistance of the element electrode cannot be sufficiently reduced because the sectional area of the element electrode is small.

  In addition, when the metal foil is bonded to the back surface side of the element electrode of the semiconductor substrate as in Patent Document 2, the electrical conductivity between the element electrode on the back surface side and the metal foil is high although the conductivity of the metal foil alone is high. Connection may be incomplete. In addition, even when an adhesive is used in the adhesion region between the element electrode and the metal foil on the back surface side of the solar cell, there is also a problem that the light transmitted through the adhesion portion is absorbed and the transmitted light from the element is absorbed and the photoelectric conversion efficiency is lowered. there were.

  The present invention has been made in view of the above, and an object of the present invention is to provide a double-sided passivation type solar cell that has particularly good passivation properties on the back surface side and low current collection resistance.

To solve the above problems and achieve the object, a solar cell according to the present invention includes a semiconductor substrate having a p n junction, and the light-receiving surface electrode that is partially formed on the light receiving surface of the semiconductor substrate, a semiconductor A light-receiving surface passivation film that covers a region other than the region where the light-receiving surface electrode is formed on the light-receiving surface of the substrate, a back electrode partially formed on the back surface of the semiconductor substrate, and a region where the back electrode is formed on the back surface of the semiconductor substrate And a back surface passivation film for covering other than the above . The back electrode has dot-like electrodes distributed in a dot shape over the entire back surface of the semiconductor substrate, and an enclosing region that wraps around the periphery of the back surface of the semiconductor substrate so as to surround the dot electrode. Punctate electrode and surrounding regions, a first layer backside electrode containing a glass frit which is formed through the rear surface passivation film, two layers of the second layer backside electrode covering the entire surface of the first layer back electrode directly Structure. The solar cell according to the present invention further includes a metal foil that is bonded to the second-layer back electrode of the point-like electrode and the second-layer back electrode of the surrounding region and covers the entire back surface side of the semiconductor substrate.

  According to the present invention, there is an effect that it is possible to obtain a double-sided passivation type solar cell having particularly good passivation properties on the back surface side and low current collecting resistance.

The top view which looked at the solar cell of this Embodiment 1 from the light-receiving surface side The top view which looked at the state which removed the metal foil of the element back surface from the solar cell of this Embodiment 1 from the back surface side The top view which shows the shape of the metal foil used for the solar cell back surface side of this Embodiment 1. It is a top view which shows the structure of the solar cell back surface side of this Embodiment 1, and is a figure which shows the state by which the metal foil shown by FIG. 3 was connected to the back surface side of the solar cell of FIG. The top view which looked at the solar cell of this Embodiment 1 which shows the structure which connected the solar cell shown in FIG. 1, FIG. 4 concerning this Embodiment 1 in series, and made it a string from the light-receiving surface side. The top view which looked at the solar cell of this Embodiment 1 which shows the structure which connected the solar cell shown by FIG. 1, FIG. 4 concerning this Embodiment 1 in series, and made it a string from the back surface side. Sectional view taken along AB in FIG. 1 of the first embodiment. CD sectional view in FIG. 5 and FIG. 6 of the first embodiment EF sectional drawing in Drawing 5 and Drawing 6 of this Embodiment 1 (A) to (j) are process cross-sectional views illustrating the method for manufacturing the solar cell of the first embodiment. The flowchart figure which shows the manufacturing method of the solar cell of this Embodiment 1. It is a figure which shows the manufacturing method of the solar cell concerning this Embodiment 1, and is a cross-sectional schematic diagram of the method of immersing the single side | surface of a solar cell in a solder bath. FIG. 12 is a schematic cross-sectional view showing a jet formed in a part of the solder bath in FIG. 12 of the first embodiment. It is a figure which shows the solar cell of Embodiment 2 which concerns on this invention, and is a top view which shows the pattern of the element electrode of the back surface side of a solar cell It is a figure which shows the solar cell of Embodiment 2 which concerns on this invention, and is a figure equivalent to the EF cross section of FIG. 5 and FIG. It is a figure which shows the solar cell of Embodiment 2 which concerns on this invention, and is a figure corresponded in the CD cross section of FIG. 5 and FIG. It is a figure which shows the solar cell of Embodiment 3 which concerns on this invention, and sectional drawing which shows the structure by which only the element electrode of a back surface side is directly covered with a sealing material. It is a figure which shows the modification of the solar cell of Embodiment 3 which concerns on this invention, and is sectional drawing which shows the structure by which the element electrode of a light-receiving surface and a back surface is directly covered with a sealing material.

  Below, the manufacturing method of the solar cell concerning embodiment of this invention and a solar cell is demonstrated in detail based on drawing. Note that the present invention is not limited to the embodiments. In addition, in each figure, the same code | symbol is attached | subjected about the same or similar component. In addition, in order to avoid the following description from becoming unnecessarily redundant and to facilitate understanding by those skilled in the art, a detailed description of already well-known matters and a redundant description of substantially the same configuration may be omitted. is there. Also, the contents of the following description and the accompanying drawings are not intended to limit the subject matter described in the claims.

Embodiment 1 FIG.
1 and 2 are plan views showing shapes of element electrodes on the light-receiving surface side and the back surface side of the solar cell according to Embodiment 1 of the present invention, showing a single element excluding a metal foil on the element back surface. Yes. FIG. 3 is a plan view showing the shape of the metal foil used on the back surface side of the solar cell of the first embodiment. 4 is a plan view showing the configuration of the back surface side of the solar cell of Embodiment 1, and shows a state in which the metal foil shown in FIG. 3 is connected to the back surface side of the solar cell of FIG. 5 and 6 are plan views showing a configuration in which the solar cells 100 shown in FIGS. 1 and 4 according to the first embodiment are connected in series to form a string, and show the light receiving surface side and the back surface side, respectively. ing. FIG. 7 is a cross-sectional view of the solar cell of the first embodiment, and is a view corresponding to the cross section AB in FIG. FIG. 8 is a cross-sectional view of the solar cell of the first embodiment, which corresponds to the CD cross section in FIGS. 5 and 6. FIG. 9 is a cross-sectional view of the solar cell of the first embodiment, which corresponds to the EF cross section in FIGS. 5 and 6. FIG. 10 is a process cross-sectional view illustrating the method for manufacturing the solar cell according to the first embodiment. FIG. 11 is a flowchart showing the method for manufacturing the solar cell according to the first embodiment. FIG. 12 is a diagram showing a method for manufacturing a solar cell, and is a schematic cross-sectional view of a method for immersing one side of the solar cell in a solder bath. FIG. 13 is a schematic cross-sectional view showing a jet formed in a part of the solder bath of FIG. Solar cell 100 of Embodiment 1 is a solar cell in which a passivation film is formed on both surfaces, back electrode 125, first layer back electrode containing glass frit, and the entire surface of first layer back electrode are permeable to moisture. It is covered with a second layer back electrode made of a small amount of metal.

  The frit generally refers to a raw material formulation that is roughly melted and vitrified, and then crushed to an appropriate particle size by water quenching or roll quenching. In this embodiment, in the sintering aid, that is, in the sintering process. It is assumed that the passivation film is eroded and penetrates through the passivation film enough to reach the underlying layer. In the following description, the element electrode refers to a light-receiving surface electrode and a back electrode that are in contact with a semiconductor substrate forming a solar cell, that is, a semiconductor layer of a silicon substrate.

  In the solar cell 100 of the first embodiment, the entire back surface 100B is covered with either the passivation film 121 or the back electrode 125 distributed over the entire back surface 100B. The back surface electrode 125 includes a back surface point-like electrode 122D arranged in a dotted manner over the entire surface, and a back surface surrounding adhesion region 123 surrounding the back surface point-like electrode 122D. The back surface surrounding adhesion region 123 is a band-like region provided over the entire periphery of the back surface 100B. The back surface dotted electrode 122D and the back surface surrounding adhesion region 123 cover the entire surface of the first layer back electrode 122a containing the dotted glass frit formed through the passivation film 121 and the first layer back electrode 122a. It is comprised with the 2nd layer back surface electrode 122b which consists of a solder layer. The solder layer is a conductor having a higher density than the first layer back electrode 122a.

  Moreover, the solar cell 100 of Embodiment 1 has the main-body part 132 of the inter-element connection body 130 comprised with metal foil, as shown in FIG. Here, the inter-element connection body 130 includes an inter-element connection portion 131 extending from the back surface 100B side of the solar cell 100 to the light receiving surface 100A side of the adjacent solar cell 100, and a main body portion 132 made of an aluminum foil covering the entire back surface 100B side. Consists of. The main body 132 is bonded to the back electrode 125 formed on the semiconductor substrate 110 and covers the entire back surface 110B. The inter-element connection portion 131 is connected to the back surface side of the main body portion 132, and connects the main body portion 132 on the back surface 100B side of the solar cell 100 and the light receiving surface electrode 115 on the light receiving surface 100A side of the adjacent solar cell 100.

  On the back surface 100 </ b> B of the solar cell 100, a back surface surrounding adhesion region 123 that circulates around the periphery is formed. The main body 132 of the inter-element connector 130 is made of a metal foil that is connected and fixed to the edge of the back electrode 125 at the back surface surrounding adhesion region 123 and covers the back surface of the back electrode 125. As shown in FIG. 7, the main body 132 is connected to the second-layer back electrode 122b and covers the entire back surface.

  As shown in FIGS. 1 and 2, solar cell 100 of Embodiment 1 is configured with a semiconductor substrate 110 having a substantially rectangular planar shape. In this embodiment mode, an n-type single crystal silicon substrate 101 in which a diffusion layer is formed and a pn junction is formed is used as a semiconductor substrate 110. Here, the substantially rectangular shape means a quadrangular shape having two sets of parallel sides that are perpendicular to each other. In particular, in a solar cell using a silicon single crystal, when forming a rectangular substrate from a cylindrical single crystal ingot, in order to reduce a portion that is cut off from a circle to a rectangle and is wasted, as shown in FIG. In many cases, a substrate having a shape in which a part of the substrate is cut off is used. The shape shown in FIG. 1 is also included in the substantially rectangular shape. In FIG. 1, an example of a shape in which a part of a square corner is cut off is shown. However, it is also possible to use a shape that has a substantially rectangular shape by dividing it into half. The semiconductor substrate 101 has a pn junction and has a thin plate shape with a thickness of, for example, 0.05 mm to 0.5 mm. As the semiconductor substrate 101, for example, an n-type silicon substrate or a p-type silicon substrate of 1 Ωcm or more and 30 Ωcm or less is used, and one surface is doped with boron and the other surface is doped with phosphorus to constitute a solar cell substrate. The semiconductor substrate 110 can be used. In Embodiment 1, the n-type single crystal silicon substrate 101 is used, but it goes without saying that a p-type single crystal silicon substrate, an n-type polycrystalline silicon substrate, or a p-type polycrystalline silicon substrate may be used. Absent.

  Passivation films 111 and 121 made of a silicon nitride film are formed on the light receiving surface 100 </ b> A and the back surface 100 </ b> B of the solar cell 100 at least over the entire surface except the contact portion between the element electrode and the semiconductor substrate 110 and the end portion of the semiconductor substrate 110. The recombination of electrons and holes on the surface of the semiconductor substrate 110 can be reduced. As the passivation films 111 and 121, an amorphous silicon nitride film having a thickness of 40 nm or more and 100 nm or less, a laminated film of a silicon oxide film and an amorphous silicon nitride film, or a laminated film of alumina and an amorphous silicon nitride film, etc. Can be used.

  In the first embodiment, the light receiving surface electrode 115, which is an element electrode formed on the light receiving surface 100A of the solar cell 100, includes a light receiving surface grid electrode 112 composed of a plurality of parallel thin line segments and a light receiving surface as shown in FIG. The grid electrode 112 and the four light-receiving surface bus electrodes 113 that intersect and intersect each other are formed. The light-receiving surface bus electrode 113 can be adjusted in line width and number to reduce the electrode shadow caused by the light-receiving surface bus electrode 113 and reduce the current collecting distance of the light-receiving surface grid electrode 112. It can be. The light-receiving surface grid electrode 112 according to the first embodiment is an electrode that collects charges generated by the generation of photocarriers from the semiconductor substrate 110 and collects the charges, and each electrode is disposed at an appropriate interval. The width and spacing of the light-receiving surface grid electrode 112 vary depending on the sheet resistance of the surface of the semiconductor substrate 110 on the light-receiving surface 100A side, but the light-receiving surface bus electrode 113 extends at a cycle of 0.5 mm to 2.5 mm, for example. It is arranged in parallel to the direction orthogonal to the current direction, and the width of each grid line can be configured to be 0.01 mm or more and 0.2 mm or less. The length of the light receiving surface grid electrode 112 can be about the same as that of the semiconductor substrate 110, and the thickness can be about 5 μm to 50 μm. The light-receiving surface bus electrode 113 is connected to the light-receiving surface grid electrode 112 having one polarity, and functions as a bus electrode that extracts the current collected by the light-receiving surface grid electrode 112 to the outside of the solar cell 100. The light-receiving surface bus electrode 113 may be formed in a separate process, but is often formed in the same process as the light-receiving surface grid electrode 112. The light-receiving surface grid electrode 112 is preferably made of a metal material mainly containing aluminum Al, silver Ag, copper Cu, nickel Ni, and tin Sn, and a laminate thereof. In solar cell 100 of the first embodiment, light receiving surface grid electrode 112 includes glass frit and silver, and the glass frit maintains the connection strength between semiconductor substrate 110 and light receiving surface grid electrode 112. The conductivity is secured by silver. The current collected by the light receiving surface grid electrode 112 in this manner is taken out of the element through the light receiving surface bus electrode 113 and used as electric power. In addition, when connecting each line of the light-receiving surface grid electrode 112 by a conducting wire or the like when creating the solar cell module, the light-receiving surface bus electrode 113 may not be connected, and the island-like shape is discontinuous. Or not at all. The light-receiving surface bus electrode 113 does not necessarily include glass frit, but in this embodiment, an electrode mainly made of silver and containing a small amount of glass frit is used.

  The shape of the element electrode on the back surface 100B side of the solar cell 100, that is, the shape of the back electrode 125 is shown in FIG. As shown in the figure, on the back surface side of the semiconductor substrate 110, a back surface dotted electrode 122D and a back surface surrounding adhesion region 123 are formed in contact with the semiconductor substrate 110 or the passivation film 121 as electrodes of the other polarity. These backside electrodes 125 are electrically connected to the substrate through the opening of the passivation film 121 of the semiconductor substrate 110. The back surface dotted electrode 122D of the first embodiment is an electrode for taking out the electric charge generated by the photocarrier generation from the semiconductor substrate 110, and each is arranged at an appropriate interval.

  As shown in FIG. 7, the back surface dotted electrode 122D has a two-layer structure of a first layer back electrode 122a and a second layer back electrode 122b covering the first layer back electrode 122a. The pattern of the first-layer back electrode 122a varies depending on the sheet resistance of the surface of the semiconductor substrate 110 made of the n-type single crystal silicon substrate 101, but is separated by an equal distance, for example, at intervals of about 0.2 mm to 2 mm. Can be formed. The size of the first layer back electrode 122a varies depending on the electrode formation method, but may be, for example, 50 μm in diameter, 20 μm in thickness, or the like.

  Here, a case is shown in which the first layer back electrode 122a is formed as an electrode group in which a plurality of point-like electrodes are separated from each other. Also good.

  The pattern of the back surface surrounding adhesion region 123 may be printed and formed in the same process as the point-like electrode that is the first layer back surface electrode 122a, and may have the same thickness. The second layer back electrode 122b is a solder layer, and will be described in detail later, but is selectively formed on the first layer back electrode 122a by passing over the molten solder. The pattern of the back surface surrounding adhesion region 123 can be formed, for example, with a width of 0.1 mm or more and 1 mm or less at a position about 0.2 mm inside from the end of the semiconductor substrate 110. The thickness of the back surface surrounding adhesion region 123 can be 1 μm or more and 50 μm or less. In the first embodiment, the back surface surrounding adhesion region 123 is directly connected to the semiconductor substrate 110. However, the back surface surrounding adhesion region 123 is not necessarily conductive, and the back surface surrounding adhesion region 123 is insulated from the semiconductor substrate 110 by the passivation film 121. It may be.

  The back electrode 125 is formed by printing using a silver paste containing glass frit and silver particles. Instead of silver particles, aluminum, nickel, tin, copper, silver, gold, a mixture and alloy thereof, and a laminate can be used. A material suitable for connecting to the outermost part of the first-layer back electrode 122a covered with the second-layer back electrode 122b to connect to the main body 132 made of a metal foil constituting the inter-element connector 130 when modularized. Is placed. For example, when connecting the element and the main body part 132 of the inter-element connector 130 using solder, at least the outermost layer of the first layer back electrode 122a and the outer edge part of the body part 132 are easily soldered copper or tin. It is desirable to use a metal such as silver. In the first embodiment, as the first layer back electrode 122a, an electrode mainly made of silver and containing glass frit and aluminum is used.

  In the first layer back electrode 122a, aluminum is approximately 0.5 wt. % Or more and 3 wt. The contact resistance with respect to p-type silicon on the back surface side of the semiconductor substrate 100 is reduced. In the semiconductor substrate 110 of the first embodiment, the first layer back electrode 122a is covered with a second layer back electrode 122b made of a solder layer.

  In the solar cell 100 of the first embodiment, the surface of the light-receiving surface bus electrode 113 is covered with solder when the current is extracted from the element through the inter-element connector 130, and the light-receiving surface grid electrode 112 is a single layer structure. It is not covered with solder. In the present embodiment, the main body 132 of the inter-element connector 130 made of a metal foil and the back surface surrounding adhesion region 123 are connected by solder, so that the back surface surrounding adhesion region 123 has wettability with respect to solder. However, the back surface surrounding adhesion region 123 does not necessarily have electrical conductivity, and may be adhered using ceramics or a mixture of metal and resin.

  The solar cell 100 according to the first embodiment has the main body 132 of the inter-element connector 130 made of the metal foil shown in FIG. 3 on the back surface 100B side of the element. FIG. 4 shows a plan view of the back side of the solar cell. The main body 132 of the inter-element connector 130 made of metal foil has the same size as the outer edge portion of the back surface surrounding adhesion region 123 shown in FIG. 2, and is sealed mainly with an inorganic substance such as solder. It connects with the back surface surrounding adhesion area | region 123 by the side of an element using a material. The light receiving surface 100A side and the back surface 100B side of the solar cell 100 in a state where the main body 132 of the inter-element connector 130 made of metal foil is mounted on the back surface are as shown in FIGS. FIG. 2 is a plan view of the back surface 100B obtained by removing the main body 132 of the inter-element connector 130 from the back surface 100B of the solar cell 100 shown in FIG. The metal foil that constitutes the main body 132 of the inter-element connector 130 is made of a metal foil such as copper, aluminum, or tin. The metal foil can be manufactured by punching a metal foil such as a copper foil. The metal foil is not only a single metal foil, but also a metal film deposited on a glass or polyimide film, a metal particle-containing resin, a group of metal fine particles formed by drying a printing paste, a metal sintered body, or the like. A film or foil connected in the same pattern shape as the first-layer back electrode 122a may be used.

  Thus, by covering the periphery of the first layer back electrode 122a, which is a point-like electrode on the back surface 100B side of the solar cell 100, with the solder layer as the second layer back electrode 122b, the film quality including glass frit is rough. The interface between the first-layer back electrode 122a and the semiconductor substrate 110 is protected without being exposed to the outside air or moisture that has penetrated from the outside air into the module. Since the first layer back electrode 122a is formed by sintering metal particles in the printing paste, the electrode after firing becomes porous, the film quality is rough, and the moisture permeability is high. For this reason, since moisture, a decomposition product of the module sealing material, etc. easily reach the interface between the glass frit and the like contained in the printing paste and the semiconductor substrate 110, contact between the electrode and the semiconductor substrate 110 due to a chemical reaction therewith. The problem of increased resistance arises. In contrast, in solar cell 100 of the first embodiment, moisture intrusion is prevented by the solder that is second layer back surface electrode 122b covering the surface. A metal continuum such as solder that does not have a through-hole reaching the first layer back electrode 122a has a dense film and low moisture permeability, and thus can protect the first layer back electrode 122a. Further, on the back surface 100 </ b> B side of the semiconductor substrate 110, a main body portion 132 made of metal foil, a back surface surrounding adhesion region 123, and a seal made of a solder layer over the entire circumference of the semiconductor substrate 110 between the main body portion 132 and the back surface surrounding adhesion region 123. By sealing with the material 133, between the 2nd layer back surface electrode 122b and the main-body part 132 which consists of metal foil is sealed, it can be set as the environment isolate | separated from the external environment. For this reason, as the sealing material 133 that connects the main body part 132 made of metal foil and the back surface surrounding adhesion region 123, it may contain a resin, but it is mainly made of an inorganic material such as metal or ceramics, and contains gas or moisture. It is preferable to use a material that does not transmit light.

  The main body 132 made of a metal foil has a function of reflecting the current collected on the back surface 100B side of the solar cell 100 and the light transmitted through the semiconductor substrate 110 and reaching the back surface 100B side of the solar cell 100. For this reason, it is desirable that the material used for the main body portion 132 made of metal foil has a low resistance in the in-plane direction and a high light reflectance on the solar cell side surface. In the solar cell 100 of the first embodiment, the element electrodes refer to the light receiving surface electrode 115 and the back surface electrode 125. The light receiving surface electrode 115 includes a light receiving surface grid electrode 112 and a light receiving surface bus electrode 113. The back surface electrode 125 is composed of a back surface point-like electrode 122D and a back surface surrounding adhesion region 123, and refers to an electrode formed on the semiconductor substrate 110, and does not include a main body portion 132 made of metal foil. As shown in FIG. 6, the main body part 132 constitutes an inter-element connection body 130 together with the inter-element connection part 131.

  As shown in FIGS. 5 and 6, the above solar cell 100 is connected by using an inter-element connection body 130 and an inter-string connection body 136 each including an inter-element connection portion 131 and a main body portion 132. 5 shows the light receiving surface 100A side of the solar cell 100, and FIG. 6 shows the back surface 100B side. A string string in which a plurality of strings are connected in series can be created. Glass and ethylene vinyl acetate on the light receiving surface 100A side of the string string, ethylene vinyl acetate on the back surface 100B side, and a back surface such as polyvinyl fluoride or polyethylene terephthalate A solar cell module can be produced by bonding a protective material. A flat copper wire covered with solder can be used as the inter-element connection portion 131 and the inter-string connection body 136 of the inter-element connection body 130 and the conductive wire 137 at the end of the string.

  FIG. 7 is a schematic cross-sectional view corresponding to the line segment of AB in FIGS. 1, 4, 5, and 6. 2 also shows a line segment AB in order to show the positional relationship between the back surface dotted electrode 122D, which is the element electrode pattern of the back surface 100B, and FIG. 7, but in FIG. The main body 132 is not shown because it is shown through the portion 132. As shown in FIG. 7, the surface of the semiconductor substrate 110 is the same as the light receiving surface 100 </ b> A and the back surface except for the connection portion between the light receiving surface grid electrode 112 constituting the light receiving surface electrode 115 and the back surface dotted electrode 122 </ b> D constituting the back electrode 125. 100B is covered with the passivation films 111 and 121. The light receiving surface electrode 115 and the back surface electrode 125 which are element electrodes are in contact with the semiconductor substrate 110 through the openings of the passivation films 111 and 121 to form contact portions between the semiconductor substrate 110 and the element electrodes.

  As the passivation films 111 and 121, silicon nitride, silicon oxide, aluminum oxide, or a laminate thereof can be used as described above, and different films are used on the light receiving surface 100A side and the back surface 100B side. May be. The surface of the back surface dotted electrode 122D, which is an element electrode on the back surface 100B side, is covered with a second layer back surface electrode 122b made of a solder layer, and the surface of the back surface surrounding adhesion region 123 is covered with a solder plating layer as a sealing material 133. . In FIG. 7, the sealing material 133 is omitted. Then, the sealing material 133 is connected to the main body portion 132 made of metal foil, and the back surface dotted electrode 122D, which is an element electrode on the back surface 100B side, and the main body portion 132 made of metal foil are electrically connected through the second layer back surface electrode 122b. Conducted. As the sealing material 133 and the second-layer back electrode 122b as described above, for example, a tin-silver containing about 3.5% silver when the main body portion 132 made of metal foil is a material mainly composed of copper. Solder or the like can be used. The main body 132 made of metal foil may have wrinkles or slack as shown in FIG. Thereby, the adhesiveness of the main-body part 132 and the back surface electrode 125 improves. Note that the back surface dotted electrode 122D, the back surface surrounding adhesion region 123, the body portion 132 of the inter-element connection body 130, and the inter-element connection portion 131 are covered with the electrical connection body 141 or the sealing material 133. However, in FIG. 2, FIG. 5 and FIG. 6, description is omitted. In FIG. 1, the light receiving surface bus electrode 113 on the light receiving surface 100 </ b> A side is also covered with the electrical connection body 141 by modularization.

  5 and FIG. 6 are schematic views of cross-sections of the strings shown in FIGS. 5 and 6 cut along a line segment of CD, which passes through the inter-element connection portion 131 of the inter-element connection body 130 and is orthogonal to the light-receiving surface bus electrode 113. As shown in FIG. The CD section shows a section passing through the light-receiving surface bus electrode 113, and in FIG. 8, the light-receiving surface grid electrode 112 and the light-receiving surface bus electrode 113 are collectively shown as the light-receiving surface electrode 115. The inter-element connection portion 131 of the inter-element connection body 130 is connected to the light-receiving surface electrode 115 by the electric connection body 141, and is connected to the light-receiving surface bus electrode 113 in the first embodiment. On the back surface 100B side of the solar cell 100, the inter-element connection portion 131 is connected to the main body portion 132 made of metal foil by the electric connection body 141, and the main body portion 132, the electric connection body 141, the second layer back surface electrode 122b, and the back surface point. The semiconductor substrate 110 is electrically connected through the electrode 122D.

  FIG. 9 shows a schematic cross-sectional view corresponding to the line segment part E-F in FIGS. 5 and 6, which is a cross-section passing through the light-receiving surface bus electrode 113 of the string shown in FIGS. 5 and 6. In the EF cross section, on the light receiving surface 100A side of the solar cell 100, the light receiving surface bus electrode 113 and one end of the inter-element connection portion 131 are connected by an electrical connection body 141, and the other end of the inter-element connection portion 131 is the adjacent sun. The battery 100 is connected on the back surface 100B side through the main body portion 132 made of metal foil and the electrical connection body 141, and the elements are electrically connected. The main body 132 is connected to the back surface side dotted electrode 122D through the electrical connection body 141 and to the back surface surrounding adhesive region 123 through the sealing material 133. As a result of adopting the above structure, the back surface dotted electrode 122D on the back surface side is surrounded and sealed by the semiconductor substrate 110, the main body portion 132, and the sealing material 133. As the sealing material 133, a resin may be included, but it is preferable to use a material that is mainly made of an inorganic material such as metal or ceramics and does not allow gas or moisture to pass therethrough. 141 and the sealing material 133 are made of the same solder material.

  The electrical connection body 141 is not necessarily formed. In particular, when the second layer back electrode is a solder layer, it is not necessary, but the presence of the electrical connection body 141 further improves the adhesion. When there is no electrical connection body 141, the connection resistance between the back surface point-like electrode 122D and the main body portion 132 is increased, and the current extraction efficiency is reduced. Therefore, the shape of the back surface dotted electrode 122D on the back surface 100B side is added so that the device electrode contributes to the current collection in the device surface direction, for example, the back surface surrounding adhesive region 123 is added to the light receiving surface electrode 115 shown in FIG. It is preferable to use a linear electrode having a single shape and a continuous element electrode.

  When the main body 132 made of metal foil is not connected to the element electrode other than the back surface surrounding adhesion region 123 by the electrical connection body 141 in this way, the metal foil is connected to the semiconductor substrate 110 with wrinkles on the metal foil. There is an advantage that the warpage of the solar cell 100 due to the difference in coefficient of thermal expansion between the main body portion 132 made of and the n-type single crystal silicon substrate 101 as the semiconductor substrate 110 can be suppressed. Further, the main body portion 132 made of metal foil and the inter-element connection portion 131 are not necessarily configured separately, and the inter-element connection portion 131 and the main body portion 132 are formed of a single metal foil. May be.

  In the present embodiment, the same solder material is used for the second-layer back electrode 122b, the sealing material 133, and the electrical connector 141, but different materials may be used. When using different solder materials, it is preferable that the melting point of the later soldering is lower than the melting point of the first soldering. As such a connection method, for example, a solar cell 100 and a sealing material 133 previously coated with a solder material are prepared, and a back surface surrounding adhesion region 123 and a metal foil are formed by a second layer back electrode 122b made of high melting point solder. The main body part 132 made of the above is fixed in advance, and then the electric connection body 141 made of low melting point solder is melted to connect the back surface dotted electrode 122D and the main body part 132 and the inter-element connection part 131 The main body 132 and the light receiving surface bus electrode 113 can be connected. As a combination of the second layer back surface electrode 122b and the electrical connection body 141, for example, a material such as tin containing 0.35% silver and tin containing 37% lead can be used. In these soldering, different fluxes may be used. The low melting point solder has a composition having a lower melting point than the high melting point solder. Further, the back surface surrounding adhesion region 123 and the main body portion 132 made of metal foil may be divided into a plurality of separate regions for one solar cell 100 to seal the device electrodes. The entire back surface 100B of the solar cell 100 is not integrally sealed, but is divided into a plurality of regions, and is peeled off when the solar cell 100 is stressed by heat or an external impact. Can be suppressed. Further, the space between the semiconductor substrate 110 of the solar cell 100 and the main body portion 132 made of metal foil may be filled with a resin such as gas or silicone, and sealed and fixed in one or a plurality of regions. .

  Consider a conventional solar cell as a comparative example. A conventional solar cell has a structure in which a back-side element electrode, which is a combination of a back-side current extraction electrode and a back-side full surface electrode, is in contact with the semiconductor substrate over the entire back side. The current extraction electrode on the back side indicates the area for connecting the inter-element connector, and the material is made of a metal such as silver that is easy to solder, and the back surface full surface electrode, which is another element electrode, diffuses aluminum. Thus, aluminum can be used because a back surface field layer (BSF) that reduces recombination at the interface between the semiconductor and the electrode can be formed. Since BSF has a higher recombination rate than when the surface is passivated, in such a structure in which the metal electrode and the semiconductor substrate are in contact with each other on the entire surface of the solar cell, the excitation carrier is present at the interface between the metal electrode and the semiconductor. Recombination occurred and the photoelectric conversion efficiency remained at a low value. As described above, in the conventional solar cell having electrodes on the entire back surface of the semiconductor substrate, since the photoelectric conversion efficiency is low from the beginning, lifetime power generation until the solar cell reaches the end of its life due to deterioration of the electrode on the light receiving surface side, etc. There was a problem that the amount was low. On the other hand, since the electrode is formed on the entire back surface and the contact area between the electrode and the semiconductor substrate is wide in the above structure, there is an advantage that the influence of an increase in contact resistance due to corrosion or peeling of a part of the electrode is small. It was. Therefore, in the general module structure, the increase rate of the contact resistance on the back electrode side due to the penetration of moisture from the installation environment is slower than the increase rate of the contact resistance of the electrode on the light receiving surface side, and the contact resistance on the back electrode side Did not become a major factor in the deterioration of power generation output over time.

  In general, when the surface of a semiconductor substrate as well as the interface between an electrode and a semiconductor is exposed to the atmosphere or a sealing material, recombination loss occurs through defects present on the semiconductor surface. Covering with a passivation film that reduces the speed is necessary to improve the photoelectric conversion efficiency. Therefore, in order to increase the photoelectric conversion efficiency, it is generally performed to reduce the electrode area on the back surface side of the solar cell and cover the other region with a passivation film. In this case, the electrode on the back surface of the element is composed of a back-side current collecting electrode for collecting current from the semiconductor substrate and a back-side bus electrode connected to the inter-element connector, similarly to the electrode on the light-receiving surface side.

  The conventional double-sided passivation solar cell has a structure in which electrodes are widely distributed over the entire semiconductor substrate surface not only on the light receiving surface side but also on the back surface side. The structure widely distributed over the entire surface of the semiconductor substrate is to ensure the conductivity in the in-plane direction of the solar cell and to reduce the recombination loss due to the contact portion between the electrode and the semiconductor substrate as much as possible. This is because it is necessary to separate the electrodes at a certain interval so as not to cover them. In the above structure, the semiconductor substrate is much lower in conductivity than the metal, so that in the part where there is no electrode, the semiconductor substrate up to the element electrode in addition to the thickness of the element until the current flows through the element and reaches the electrode part Since its own resistance is added and resistance loss in the substrate increases, it is preferable to reduce the distance between the element electrodes from the viewpoint of resistance. On the other hand, when the electrode interval is narrow, the recombination speed of the carrier is large at the part where the semiconductor and the metal are in contact and the contact area between the device electrode and the semiconductor is preferably small. Also on the side, it is necessary to reduce the distance between the device electrodes and the contact area between the electrodes and the semiconductor. In order to maximize the photoelectric conversion efficiency from the viewpoint of these resistances and recombination speeds, the element electrode interval and the contact area between the electrode and the semiconductor have optimum values. Cover the surface of the semiconductor substrate with a passivation film that sufficiently reduces the carrier recombination rate at the interface at the contact portion between the semiconductor substrate and the metal electrode having a small distributed area for extracting current from the semiconductor substrate, that is, the portion other than the contact portion. This improves the photoelectric conversion efficiency. For the above reasons, the double-sided passivation element has a structure in which the device electrodes are widely distributed over the entire semiconductor substrate on the light receiving surface and the back surface side of the semiconductor substrate, and the semiconductor surface other than the device electrodes is covered with a passivation film. There is an advantage that the photoelectric conversion efficiency is higher than that of the structure in which the device electrode is formed on the entire surface of the substrate.

  However, on the other hand, the present inventors have newly found that the deterioration rate of photoelectric conversion efficiency at high temperature and high humidity is faster in a double-sided passivation type solar cell than in a structure in which electrodes are provided on the entire back side of a semiconductor substrate. It was. As an example, although depending on the amount of moisture permeation in the module and the material used for the device electrode, the series resistance increased by about 5% to 20% after 1000 hours in a high temperature and high humidity environment with a temperature of 85 ° C. and a humidity of 85 ° C. . In a module using a solar cell having an aluminum electrode containing glass frit on the entire back surface of the element under the same sealing conditions, it was 1% or less, and deteriorated at a rate of more than double. For this reason, a double-sided passivation type solar cell using a glass frit electrode on the back side reduces power generation output over time even if the initial photoelectric conversion efficiency is high, so power generation until the solar cell stops generating power. The power is not as high as expected from the initial output and the degradation rate of the conventional solar cell. This is because the contact area between the device electrode on the back surface and the semiconductor is small and the perimeter of the electrode is short, so that moisture easily permeates between the device electrode and the semiconductor. This is because peeling occurs and the contact resistance between them increases. In addition, in the module, glass is generally arranged on the light receiving surface side and a resin film is arranged on the back surface side, so that moisture does not enter from the light receiving surface side, whereas moisture is introduced from the back surface side. Since it penetrates easily, the element electrode on the back side is particularly susceptible to moisture. It has also been found that such deterioration is particularly remarkable in an electrode containing a base metal other than silver, such as aluminum, as compared to the case of silver alone. For example, in an electrode containing aluminum and silver, an intermetallic compound of aluminum and silver is formed, and the mechanical strength is likely to decrease due to moisture, and the contact resistance is likely to increase with time. In addition, for example, when there is no texture on the back side of the semiconductor substrate and the surface roughness of the connection portion between the semiconductor substrate and the device electrode on the back side is low, the decrease in photoelectric conversion efficiency due to increase in contact resistance over time is said to be accelerated. I found a new problem. The same applies to the light receiving surface side. This is probably because the contact area between the substrate and the device electrode is small compared to the case where there is a texture.

  Therefore, in the first embodiment, the element electrode on the back surface side is sealed with a solder layer that is an inorganic material. In the structure of the first embodiment, the back surface dotted electrode 122D includes a first layer back electrode 122a made of a metal layer containing glass frit and a second layer back electrode 122b made of a solder layer covering the first layer back electrode 122a. And a two-layer structure. Further, since it is sealed with a sealing material 133 formed in the main body part 132 and the back surface surrounding adhesion region 123 of the inter-element connector 130 made of metal foil, the element electrode forming part on the semiconductor substrate 110 is externally connected. Since the intrusion of moisture is reduced, there is an advantage that an increase in contact resistance with time due to deterioration such as corrosion and peeling of the electrode can be suppressed, and power generation output and photoelectric conversion efficiency can be kept high. The deterioration with the passage of time has occurred even in the structure of a general solar cell module in which the back surface is sealed with a resin when a solar cell having a passivation film on the back surface side and having an electrode area narrower than the passivation area is used. On the other hand, according to the solar cell 100 of Embodiment 1, deterioration can be suppressed also in the module structure. Therefore, in the solar cell and the solar cell module, since moisture does not reach the element electrode on the back surface of the element, it has an effect that deterioration of photoelectric conversion efficiency can be suppressed. Moreover, even if base metals such as aluminum are included, the permeation of moisture or gas, which is the cause of deterioration of power generation output over time, can be reduced, so that deterioration of power generation output and photoelectric conversion efficiency over time is suppressed, and the lifetime of solar cells and modules This has the advantage that the amount of power generation can be increased. Furthermore, for example, even in a flat surface structure with a low surface roughness and a flat surface without a texture composed of a large number of regular tetrahedral pyramids on the back side of the semiconductor substrate, the power generation output and photoelectric conversion efficiency due to the increase in contact resistance over time Since the decrease can be suppressed, the lifetime power generation of the solar cell and the module can be increased. Since the surface or interface of the semiconductor is a major factor for carrier recombination, the advantage of improving the photoelectric conversion efficiency in such a flat structure is that the area of the part that causes carrier recombination can be reduced. Have

  In addition, the metal foil constituting the main body 132 of the inter-element connector 130 has a function of reducing the current collecting resistance in the element surface, and the light absorption rate of the semiconductor is low, so that the light transmitted through the element without being absorbed can be transmitted. By reflecting, the light is re-incident on the semiconductor substrate to increase the light utilization efficiency, thereby increasing the photoelectric conversion efficiency of the solar cell. For example, when silicon having a thickness of about 200 μm is a semiconductor substrate of a solar cell, a part of light having a wavelength of 900 nm to 1300 nm is not completely absorbed and passes through the element. On the other hand, it is known that when a copper foil or an aluminum foil is used as the metal foil, light having a wavelength of 900 nm or more and 1300 nm or less is reflected, and the photoelectric conversion efficiency of the solar cell and thus the power generation output is improved. However, in the structure in which the copper foil is simply disposed on the back side of the double-sided passivation type solar cell shown in Patent Document 2, the surface of the metal foil is easily oxidized by moisture and oxygen entering from the atmosphere, and the reflectance is lowered. However, there arises a problem that the photoelectric conversion efficiency and the power generation output are reduced. In the wavelength range where the intensity of sunlight is high, the reflectivity is high, the reclaimable reserves are relatively large and can be used industrially in large quantities, and inexpensive metals include aluminum and copper. The reflectivity was easy to decrease. On the other hand, aluminum has a problem of poor solderability. A decrease in reflectance and a decrease in photoelectric conversion efficiency also occur in a solar cell module sealed with a general resin. In particular, when ethylene vinyl acetate that is generally used as a sealing material for modules is used and copper foil is used as the metal foil constituting the main body 132 of the inter-element connector 130, acetic acid generated from ethylene vinyl acetate is not generated. There is a problem of promoting corrosion of copper. In order to suppress these problems, for example, when the surface is coated with tin, tin has a reflectance that is about several tens of percent lower than that of copper, and thus the reflectance is lowered by the coating itself. On the other hand, in the structure of the first embodiment, not only the device electrodes on the back surface side of the solar cell but also the surface of the metal foil constituting the main body 132 on the semiconductor substrate 100 side is sealed. And separated from the module sealing resin. Therefore, there is an advantage that the reflectance on the surface of the metal foil constituting the main body 132 and the photoelectric conversion efficiency are not reduced as in the conventional case. In addition, there is an advantage that it is possible to suppress a decrease in passivation ability due to humidity that occurs when a silicon oxide film is used as the passivation film. As a result, a metal such as copper, which is easily oxidized but has high reflectivity and conductivity, can be used as the metal foil on the back surface of the element, and the initial value of photoelectric conversion efficiency can be increased. Further, in the structure of the first embodiment, the main body portion 132 made of metal foil is sealed, so that intrusion of moisture from the outside to the surface of the main body portion 132 made of metal foil on the semiconductor substrate 100 side can be suppressed. For this reason, it is possible to suppress a decrease in reflectance over time due to oxidation and corrosion of the main body portion 132, and it is possible to suppress deterioration in power generation output and photoelectric conversion efficiency.

  The deterioration over time was remarkable when a base metal was used for the element electrode and when the back surface of the semiconductor substrate was flat, but this has an advantage that it can also be suppressed. Further, although the deterioration with time occurred in the structure of a general solar cell module in which the back surface was sealed with resin, in the module structure in which the solar cell of Embodiment 1 was sealed, a base metal was used for the element electrode. Also in this case, since the first layer back electrode is covered with the high density second layer back electrode, the moisture resistance is improved and deterioration can be suppressed. Therefore, according to Embodiment 1, since the initial photoelectric conversion efficiency and the long-term photoelectric conversion efficiency and the power generation output can be kept high in the solar cell and the module, the lifetime power generation amount until the solar cell reaches the end of its life is obtained. There is an effect that it can be increased.

  Further, according to the above structure, the solder is formed only on the portion of the back surface of the solar cell that contacts the metal element electrode, and no solder is formed on the light receiving surface side, so that the electrode shadow does not increase. The light receiving area is not reduced. Further, by covering only the first layer back electrode 122a as the back electrode 125 of the solar cell 100 with the second layer back electrode 122b made of a solder layer, the area where the solder is formed can be reduced. Therefore, the amount of light absorbed by the electrical connector 141 among the light transmitted through the solar cell 100 is reduced, reflected by the main body 132 made of metal foil, and again from the back surface 100B side of the solar cell 100 to the semiconductor substrate 100. Incidence can contribute to power generation. For example, a copper foil may be used as the metal foil constituting the body portion 132 of the inter-element connector 130, and a thin metal layer such as tin may be formed on the entire surface on the solar cell 100 side by plating or the like. In the case of using a metal layer, since tin has a lower reflectance of 900 nm to 1200 nm than copper, reflection of light transmitted to the back surface of the element is weak and photoelectric conversion becomes low. With these effects, the structure of the present invention has the advantage that the photoelectric conversion efficiency can be improved.

  In addition, according to the structure of the solar cell of the first embodiment, in order to prevent moisture from entering the entire module, an aluminum foil bonded to a polyethylene terephthalate (PET) film on the back surface is used as a back surface protection material. As compared with the above, the electrostatic withstand voltage can be increased. Specifically, when protrusions such as horns are formed on the solder in the inter-element connection body or the like, there is a problem that the inter-element connection body and the protective material aluminum are short-circuited. Compared to this, in this embodiment, the separation distance between the back surface protective material and the sealing material such as ethylene vinyl acetate is large, and there is no need to use a metal foil for the back surface protective material. There is no advantage.

  In the solar cell 100 of the first embodiment, the back electrode 125 is configured by a dot electrode, that is, a back surface dotted electrode, but may be configured by a grid electrode similarly to the light receiving surface side. The entire back surface 100B is covered with either the passivation film 121 or the back electrode 125 distributed over the entire back surface 100B. As shown in the cross-sectional view of FIG. 7, the back electrode 125 includes a back surface dotted electrode 122 </ b> D distributed and arranged over the entire back surface 100 </ b> B, and a back surface surrounding adhesion region 123 that covers the periphery. The back surface dotted electrode 122D includes a first layer back electrode 122a containing glass frit formed through the passivation film 121, and a second layer back electrode composed of a solder layer covering the entire surface of the first layer back electrode 122a. 122b. The solder layer is a conductor having a higher density than the first layer back electrode 122a.

(Production method)
Next, an example of a method for manufacturing solar cell 100 of Embodiment 1 will be described. FIGS. 10A to 10J are process cross-sectional views schematically showing the solar cell manufacturing method of Embodiment 1, and FIG. 11 is a flowchart showing the process.

  First, an n-type single crystal silicon substrate 101 having a thickness of several hundred μm is prepared as a starting material for forming the semiconductor substrate 110, and the substrate is cleaned in step S10. Since the n-type single crystal silicon substrate 101 is manufactured by slicing an ingot formed by cooling and solidifying molten silicon with a wire saw, damage at the time of slicing remains on the surface. Therefore, a damaged layer removing step is performed. The damaged layer removing step is performed by using sodium hydroxide (NaOH) (concentration of 1 wt% or more and 50 wt% or less, for example) at a temperature of about 70 ° C. or more and 90 ° C. or less for an n-type single crystal silicon substrate for several minutes or tens of minutes. This is a step of immersing and etching the surface of the silicon substrate. The concentration of sodium hydroxide is, for example, 1 wt% or more and 50 wt% or less. The damaged layer removing step includes an aqueous solution of sodium hydroxide, an aqueous solution of potassium hydroxide (KOH), an aqueous solution of sodium hydroxide and an aqueous solution of potassium hydroxide, or an etching solution such as a mixture of hydrofluoric acid and nitric acid. May be used.

  In the etching step, the surface of the substrate is etched by about 5 μm to 20 μm in order to remove the mechanically altered layer and dirt on the surface of the n-type single crystal silicon substrate generated when slicing the single crystal ingot.

After the etching, a texture forming process is performed in step S20. The texture forming step is a step of forming an uneven portion called a texture structure on the surface of the n-type single crystal silicon substrate 101. The texture structure is a light confinement technique using multiple reflections of incident light, and is performed in order to improve the performance of the solar cell. In order to obtain the texture structure, a chemical removal method such as a wet etching method, a groove processing method using a mechanical method, or a dry etching method is performed. As a method by wet etching, for example, a process in which 1 wt% to 30 wt% isopropyl alcohol is added to the same alkaline aqueous solution used in the damaged layer removing process, or a sodium carbonate (Na ₂ CO ₃ ) aqueous solution or the like is used. There is. Further, a texture having a depth of 1 μm or more and 3 μm or less may be formed on the surface of the n-type single crystal silicon substrate by a dry etching process such as reactive ion etching (RIE).

  By the above method, an n-type single crystal silicon substrate 101 as a semiconductor substrate 110 having a texture structure as shown in FIG. 10A can be obtained. Here, pyramidal uneven portions are uniformly formed. In the drawing, the size of the unevenness is enlarged in order to reveal the features.

Next, as shown in FIG. 10B, in step S30, the n-type single crystal silicon substrate 101 having a texture structure is placed in a high-temperature thermal oxidation furnace to diffuse boron tribromide (BBr ₃ ). Process. In the diffusion step, for example, heat treatment is performed on the n-type single crystal silicon substrate 101 that has been processed for 10 minutes to 60 minutes at a temperature of 850 ° C. to 1050 ° C. by a vapor phase diffusion method in a boron tribromide gas. A pn junction is formed by forming a p-type diffusion layer 102 on the surface of the single crystal silicon substrate 101.

  Next, Step S40 is performed, and the boron glass mainly composed of the glass generated when the p-type diffusion layer 102 is formed is removed with a hydrofluoric acid aqueous solution. Boron glass is an impurity-containing film that is generated in a diffusion process and contains boron as an impurity. Step S40 is an impurity-containing film removal step.

  Then, a thermal oxide film forming step S50 as a mask is performed. As shown in FIG. 10C, the n-type single crystal silicon substrate 101 that has undergone the impurity-containing film removal step is placed in a thermal oxidation furnace at a temperature of 850 ° C. or higher and 1050 ° C. or lower, and in an oxygen atmosphere for 10 minutes to 60 minutes. A thermal oxide film 103 having a thickness of 30 nm or more is formed as a mask during diffusion.

  Since the heat treatment step is performed after removing boron glass serving as a boron supply source, a deep junction can be formed while suppressing excessive diffusion of boron into the n-type single crystal silicon substrate. By deepening the junction, the electrode moves away from the depletion layer region and shifts in a direction in which recombination of minority carriers is suppressed, so that high power generation efficiency can be obtained. And the thermal oxide film produced | generated at the said heat processing process becomes a mask for the diffusion layer formation of a back surface side.

  Next, as shown in FIG. 10 (d), in step S60, using the single-sided etcher, one side of the back surface 101B side of the n-type single crystal silicon substrate 101 is wet-etched with a mixed solution of hydrofluoric acid and nitric acid. The thermal oxide film 103 and the p-type diffusion layer 102 of 101B are removed, and the diffusion layer on the back surface is removed.

Then, as shown in FIG. 10E, in step S70, the n-type single crystal silicon substrate 101 is put into a high-temperature thermal oxidation furnace, and n-type impurities such as phosphorus oxychloride (POCl ₃ ) are diffused to the back surface. The diffusion layer is formed. In the diffusion step, for example, heat treatment is performed at a temperature of 750 ° C. to 950 ° C. for 10 minutes to 60 minutes in phosphorus oxychloride gas by a vapor phase diffusion method, and the n-type single crystal silicon substrate 101 is subjected to n-type etching on the wet-etched surface. By forming the diffusion layer 104, a back surface field (BSF) layer is formed. In the step of forming the diffusion layer on the back surface, since the thermal oxide film 103 is formed on the p-layer diffusion layer 102 of the n-type single crystal silicon substrate 101, the thermal oxide film 103 serves as a diffusion protection mask, and the p-type The formation of the n-type diffusion layer 104 on the diffusion layer 102 can be prevented.

Then, after the diffusion step, as shown in FIG. 10 (f), the phosphorous glass mainly composed of glass generated when the n-type diffusion layer 104 is formed and the thermal oxide film 103 on the p-type diffusion layer 102 are covered with a glass. By removing with an acid aqueous solution, the p-type diffusion layer 102 can be formed on one side of the n-type single crystal silicon substrate 101, that is, the light-receiving surface 101A side, and the n-type diffusion layer 104 can be formed on the other side, that is, the back surface 101B side. Next, the surface of the n-type single crystal silicon substrate 101 is cleaned. Cleaning can be performed using hydrochloric acid / hydrogen peroxide (HPM), sulfuric acid / hydrogen peroxide (SPM), sulfuric acid (H ₂ SO ₄ ), nitric acid, hydrogen peroxide (H ₂ O ₂ ), ozone (O ₃ ) water, hydrofluoric acid, or these It can be carried out by a mixture of acids or the like, or a combination or repetition of these acids.

  In step S80, the cleaned n-type single crystal silicon substrate 101 is placed in a thermal oxidation furnace at a temperature of 850 ° C. or higher and 1050 ° C. or lower, an oxide film forming step is performed in an oxygen atmosphere, and a heat treatment is performed for 10 minutes to 60 minutes. Then, an oxide film 105 having a thickness of 5 nm to 30 nm is formed.

Next, in step S90, a silicon nitride film 106 serving as an antireflection film is formed on the n-type single crystal silicon substrate 101. Film formation is performed using a vapor phase method such as a plasma CVD apparatus to form a SiN _x film having a thickness of 40 nm to 100 nm. Further, as shown in FIG. 10G, a silicon nitride film 107 is also formed on the n-type diffusion layer 104 side under the same conditions as the silicon nitride film 106 serving as the antireflection film. The silicon nitride film 107 serves as a passivation film for the n-type diffusion layer 104. Here, the silicon nitride film 106 as the antireflection film and the silicon nitride film 107 as the passivation film may be formed in the same process or sequentially under the same conditions. On the light receiving surface side 101A, a sufficient passivation effect is obtained by the oxide film 105, and the silicon nitride film 106 functions as a passivation film but effectively functions as an antireflection film. On the other hand, on the back side, the oxide film 105 and the silicon nitride film 107 act as a passivation film. In the description of FIGS. 1 to 9, all of the outer layer film of the p-type diffusion layer 102 on the light receiving surface 101 A side and the outer layer film of the n-type diffusion layer 104 on the back surface 101 B side are the passivation films 111 and 121.

  Then, as shown in FIG. 10 (h), in the electrode printing step S100, a commercially available silver paste for solar cells containing an organic substance such as a thickener, glass frit, and a few percent of aluminum is screen-printed on the boron diffusion surface. Then, the pattern of the first layer back surface electrode 122a is formed so as to be the dot-like electrode shown in FIG. Similarly, a silver paste containing a commercially available glass frit is screen-printed on the phosphorous diffusion surface so that the shape of the light-receiving surface electrode 115 shown in FIG. 1 is obtained.

  In step S110, the light-receiving surface electrode 115 is an antireflection film by baking the n-type single crystal silicon substrate 101 subjected to the above processing at a temperature of 650 ° C. to 900 ° C. for several tens of seconds to several minutes. Breaking through the silicon nitride film 106 and the oxide film 105, aluminum diffuses into the surface of the n-type single crystal silicon substrate 101 to obtain ohmic contact with the p-type diffusion layer 102. On the other hand, the first-layer back electrode 122a penetrates the silicon nitride film 107 and the oxide film 105, and obtains ohmic contact with the n-type diffusion layer 104 as shown in FIG.

  Next, in step S120, the surface of the wafer outer edge portion of the boron diffusion surface is removed, and pn junction separation is performed. As a method for removing the front surface of the wafer, although not shown, a laser is applied to the outer edge of the wafer on the outer periphery of the back surface surrounding adhesion region 123 to locally remove the boron doped layer to form a separation groove having a width of about 10 μm and a depth of about 20 μm. Form. As described above, a portion without the n-type diffusion layer 104 is formed so as to surround the back surface surrounding adhesion region 123, and the space between the p-type diffusion layer 102 on the light receiving surface 101A side and the n-type diffusion layer 104 on the back surface 101B side is formed. Since the resistance is high, a short circuit between the light receiving surface electrode 115 and the back surface electrode 125 can be prevented. As such pn separation, besides the laser, the doped layer formed on the end surface on the semiconductor substrate side may be removed by using sand blasting to the end surface of the semiconductor substrate or plasma etching using a corrosive gas.

  Finally, in the solder layer forming step S130, as shown in FIG. 10 (j), a second layer back electrode 122b made of a solder layer is formed around the first layer back electrode 122a on the back surface side. The cell configuration of the solar battery is completed through the above steps.

  The back surface dotted electrode 122D of the solar cell 100 formed in this way is composed of a first layer back electrode 122a containing glass frit and a second layer back electrode 122b covering the first layer back electrode 122a. Yes. Therefore, by baking the paste containing glass frit, the first layer back electrode 122a having a coarse density is covered with the second layer back electrode 122b made of a high-density solder layer, so that the moisture resistance is high. An electrode with low current collection resistance can be formed.

  Next, a method for forming the second layer back electrode 122b will be described in detail. In the present embodiment, a solder layer is used as the second layer back electrode 122b, but the surface of the first layer back electrode 122a is reliably covered and formed in a region other than the surface of the first layer back electrode 122a. It is necessary to form so that it is not. On the other hand, it is also important to form without increasing man-hours. Therefore, in this embodiment, a solder layer is used as the second-layer back electrode 122b, and the same solder layer is used as the electrical connection body 141 and the sealing material 133 so that they can be formed in the same process as much as possible. To.

  The surface of the back electrode 125 of the solar cell is covered with tin-silver solder using tin solder containing 0.3% of silver as a material. The method for forming the solder layer according to the first embodiment will be described with reference to FIG. A tin solder containing 0.3% of silver is heated and melted in the solder bath 201 to obtain a molten solder 202 and hold it. As shown in FIG. 12, only the back surface 100B of the solar cell 100 is immersed in the molten solder bath 200 and then pulled back to room temperature, whereby the second layer back electrode 122b made of a solder layer is formed. The second layer back electrode 122b covers the first layer back electrode 122a of the back surface 100B of the solar cell 100.

  In addition, in the state which returned to room temperature in the state pulled up from the solder bath 201, and it has made it harden | cure, a convex part arises in a solder, Therefore A solar cell is used until a solder melts again in the state where the back side of the element turned up. The solder may be flattened by heating to room temperature again. By immersing only one surface in the solder bath 201 as described above, the solder can be formed in a self-aligned manner only on the surface of the first layer back electrode 122a of the solar cell 100 without positioning.

  In order to form solder in a self-aligned manner on the element electrode on the back surface by such a method, it is necessary to select a combination in which the wettability of the first layer back surface electrode 122a and the back surface surrounding adhesion region 123 and the sealing material 133 is good. There is. As a method other than forming the electrical connection body 141 on the element electrode side as described above, the electrical connection body 141 may be formed on the metal foil side constituting the main body 132 of the inter-element connection body 130. Specifically, a tin layer or a solder layer is formed on the surface of the main body 132 shown in FIG. 3 on the side connected to the solar cell 100 by a method such as electroplating or cream solder screen printing. Can do. The solder region formed on the main body 132 when forming the tin layer or the solder layer may be formed on the entire surface of the main body 132, but the reflectance of the main body 132 is higher than that of the solder material used for bonding. When it is high, it is preferable that the solder layer is locally formed in a portion connected to the element electrode of the solar cell.

  Further, for example, when different metals are used for the electrical connection body 141 and the sealing material 133, it is necessary to selectively perform solder coating on the back surface surrounding adhesion region 123 and the back surface point-like electrode 122D or the first layer back surface electrode 122a. There is. When performing solder coating, as shown in FIG. 13, the solder liquid surface is locally lifted by the solder jet part 203, separated from the liquid surface of the molten solder 202, and lower than the solder jet part 203. It is only necessary to hold the battery 100 and move the solar battery 100 so that only the back surface surrounding adhesion region 123 of the solar battery 100 hits the solder jet part 203. According to the said structure, there exists an advantage that the heat damage at the time of attaching solder can be reduced. Moreover, you may print and form a solder paste. Furthermore, a silicon oxide film is formed on the back surface surrounding adhesion region 123 by CVD or the like, formed by printing glass frit as the sealing material 133, and silver is deposited on the semiconductor substrate side constituting the solar cell 100 as the main body portion 132. In the state where the glass plate, the glass frit, and the silicon oxide film in the back surface surrounding adhesion region 123 are abutted with each other, the glass frit is irradiated with laser light to locally heat the glass frit. The back electrode 125 of the semiconductor substrate can also be sealed.

  In addition, after forming the 2nd layer back surface electrode 122b by the above process, the element connection of the solar cell 100, ie, the connection between cells, is performed, and a solar cell string is formed. An inter-element connection body 130 used for connection between cells includes an inter-element connection portion 131 including four rod-shaped bodies connecting the elements, and a main body portion 132 including a metal foil connected to the inter-element connection portion 131. Consists of. The inter-element connection portion 131 and the main body portion 132 are each covered with a solder plating layer with the copper surface as an electrical connection body 141.

  First, in this step, a metal foil forming the main body part 132 of the inter-element connection body 130 is placed on a hot plate and heated to a temperature at which the electric connection body 141 of the main body part 132 melts, and soldering is performed as described above. The back surface 100B side of the solar cell 100 is placed facing the main body portion 132 side, and then the main plate portion 132 and the solar cell 100 are electrically and mechanically connected by lowering the temperature of the hot plate. The solar cell 100 whose back side is shown in FIG. 4 can be manufactured. Further, during heating, the element connection portion 131 covered with the electrical connection body 141 made of solder is heated while being pressed against the light-receiving surface bus electrode 113 and the main body portion 132 of the solar cell 100, whereby the element The inter-connection portion 131 can be connected to the light-receiving surface bus electrode 113 and the main body portion 132. The solar cell string shown in FIGS. 5 and 6 can be formed by repeating the above steps.

  Copper is used for the main body portion 132 of the embodiment, and the thickness is 20 μm. If it has a thickness of several μm or more, it can prevent the permeation of gas and moisture, but in the case of a thickness of several tens to several hundreds of nanometers or less that can be practically formed by a thin film forming method such as vapor deposition, oxygen in the atmosphere Since the thickness is about the same as the film thickness of the oxide film oxidized by the gas, there is a possibility that gas and moisture permeate from a portion that is oxidized and becomes brittle from the non-light-receiving surface side. This can also occur in the case of a structure in which the element electrode itself is not sealed with a metal foil using a metal vapor deposition film.

  If the thickness of the main body 132 is too large, the warp of the element increases. In the connection step, in order to keep the reflectance of copper used for the main body 132 high, the semiconductor substrate side of the copper foil is chemically or mechanically removed in advance to remove the oxide, and then an inert gas atmosphere. It is desirable to melt and connect the solder while heating in.

  In addition, as a method for protecting the surface of the main body 132 from oxidation, a coating material or a filler that is transparent to the transmitted light of the semiconductor substrate 110 may be formed on the copper foil side. As this method, for example, benzotriazole or the like may be applied to the surface of the copper foil in advance. Further, a flat copper foil having a thickness of about 0.2 mm can be used as the main body 132 of the inter-element connector 130.

  In the above description, a solar cell using a silicon substrate as a semiconductor substrate has been described as an example. However, the method of the embodiment can be applied to semiconductor devices and devices other than silicon and other than solar cells. .

  In the above description, the case where a single crystal silicon substrate is used has been described. However, the present invention can also be applied to an inorganic solid solar cell such as a polycrystalline silicon substrate or a gallium arsenide substrate.

  Further, the light receiving surface inside the semiconductor substrate, the doped layer on the back surface and the semiconductor type of the semiconductor substrate itself may be in any combination, but the electrode pattern on the light receiving surface in that case is as shown in FIG. It needs to be connected. For example, the boron side may be the light-receiving surface side, but in that case, the side on which the n-type diffusion layer made of the phosphorus diffusion layer is formed is replaced with that of FIG. 2, and the boron diffusion surface side is replaced with that of FIG. It is necessary to use an electrode material having a small contact resistance with p-type silicon. The metal foil at this time is connected to the electrode on the phosphorus doped layer side.

  As described above, according to the method of Embodiment 1 in which the second layer back electrode is formed by forming a solder layer by immersing in molten solder, the first layer back electrode 122a is wettable. Since good solder can be brought into contact with only one surface of the light receiving element, the second layer back electrode 122b can be formed in a self-aligning manner without alignment. In addition, due to the difference in solder wettability, a solder layer is selectively formed on the first layer back electrode 122a to form the second layer back electrode 122b. Furthermore, in the case of solder, since the specific gravity of the molten solder is large, the solar cell floats on the molten solder, and the second layer back electrode 122b is selectively formed only on the back surface. Further, since no solder is formed on the light receiving surface side, there is an advantage that the effective light receiving area of the solar cell is not reduced. In addition, since the area where the solder is formed can be reduced by forming the solder so as to cover only the back electrode of the solar cell without alignment, the electrical connector 141 among the light transmitted through the solar cell 100 The amount of light absorbed can be reduced, reflected by the main body 132, and incident again on the semiconductor substrate from the back surface side of the solar cell 100, thereby contributing to power generation and improving the photoelectric conversion efficiency. Have advantages.

  In addition, since solder having a low melting point and a low Young's modulus is used for covering the device electrode, there is an advantage that warpage after coating with the solder can be reduced and cracking of the device can be reduced.

  As described above, according to the solar cell of the first embodiment, the first-layer back electrode 122a is covered with the second-layer back electrode 122b made of a high-density solder layer, preventing moisture from entering, It has high moisture resistance. Further, the outer side of the second-layer back electrode 122b is covered with a metal foil constituting the main body 132 of the inter-element connector 130, and is sealed by a back-surface surrounding adhesion region 123 that circulates in a strip shape along the peripheral edge. Since the sealing is performed by the solder layer which is the stationary body 133, moisture permeation is suppressed by a double structure. Therefore, a solar cell with high moisture resistance can be obtained.

  In addition, the main body 132 of the inter-element connector 130 made of metal foil is also in contact with and electrically connected to the second layer back electrode 122b in the inner region surrounded by the peripheral edge of the semiconductor substrate 110. . Therefore, the electrical resistance on the back side can be reduced. Moreover, moisture resistance can be improved by inhibiting moisture permeation by the metal foil.

  The second layer back electrode 122b is made of a metal having a melting point lower than the melting temperature of the glass frit contained in the light receiving surface electrode 115 and the first layer back electrode 122a. Therefore, solar cell 100 of Embodiment 1 can be manufactured using a conductive adhesive such as solder or silver solder. Since a metal having a low melting point basically has a small coefficient of linear expansion, warping and cracking of the element can be prevented. Since the melting point of the second layer back electrode 122b, ie, the coated metal, is lower than that of the glass frit, the second layer back electrode 122b is made of the solder layer formed using the apparatus of FIGS. Warpage due to the difference in coefficient of thermal expansion between the glass frit and the glass frit electrode alone is less. In particular, when the number of grid electrodes on the back surface is larger than that of the light receiving surface electrodes, warpage can be reduced. Further, as the metal film for forming the second layer back electrode 122b, a metal having a melting point that does not melt the glass frit even when melted can be efficiently connected to the glass frit electrode in a self-aligning manner. It can be used for electrical connection such as resistance reduction and tab connection.

  Further, since only the back electrode on the back surface side is formed in a two-layer structure, and the second layer back electrode is a metal layer covering the periphery of the first layer back electrode, the back surface without increasing the electrode shadow area on the light receiving surface side. A solar cell excellent in moisture resistance and conductivity of the element electrode can be easily produced. The amount of silver used on the back surface can be reduced. In particular, the back surface side of the solar cell is often composed of a film instead of a glass substrate, and the back surface side has a structure in which moisture easily enters, but the first layer back electrode is a second layer back surface made of a metal film. Since it has a structure in which it is covered with an electrode and the outer side is securely tightly sealed with the main body 132 of the inter-element connector 130, it is possible to reliably prevent moisture from entering and improve moisture resistance.

  In the step of forming the second layer back electrode, after firing the first layer back electrode, the back surface of the semiconductor substrate is immersed in a solder bath filled with molten solder, and the second layer back electrode is formed on the first layer back electrode. Forming a step. In addition, even if it does not align, a solder layer can be laminated | stacked only on the 1st layer back surface electrode which is a printed glass frit electrode by self-alignment. Compared to electroplating, hot dipping is cheaper and the plating layer can be bonded not only to the n side but also to the p side of the semiconductor. Moreover, although there is a problem that unnecessary precipitation occurs in the pinhole of the passivation film in electrolytic plating and electroless plating, there is no possibility that unnecessary precipitation occurs.

  In the first embodiment, the second layer back electrode is formed by dipping in a molten metal such as molten solder. However, after the second layer back electrode is baked, the second layer back electrode is placed in a hot dipping bath. The back surface of the semiconductor substrate may be immersed to form the second layer back electrode on the first layer back electrode. The plating electrode can be formed in a self-aligned manner without alignment with the first layer back electrode, and the back electrode having high moisture resistance can be formed without increasing the electrode shadow area on the light receiving surface side. It becomes possible.

  Moreover, it is desirable that the step of forming the second layer back electrode includes a step of heating the second layer back electrode upward after pulling up from the metal tank filled with the molten metal. If protrusions are formed on the hot-dip plating, the back film may be destroyed by the protrusions when modularized, and the insulation may be lowered. Therefore, reliability is improved by heating to the melting temperature and then flattening.

  In addition, the process of attaching the main body 132 of the inter-element connector 130 to the back side of the solar cell 100 may be melted and fixed by laser irradiation, and easy and reliable sealing is possible.

Embodiment 2. FIG.
FIG. 14 is a plan view showing the shape of the device electrode on the back surface side of the solar cell according to the second embodiment of the present invention, and shows a single device excluding the metal foil on the device back surface. 15 and FIG. 16 are cross-sectional views of the solar cell of the second embodiment, corresponding to the CD cross-section and the EF cross-section in FIGS. 5 and 6. The solar cell 100S of the second embodiment is different from the solar cell of the first embodiment in the shape of the element electrode on the back surface. As shown in FIG. 14, the portion corresponding to the inter-element connector 130 on the back surface 100B side has a semiconductor substrate. 110 has a structure in which there is no element electrode. The light-receiving surface electrode 115 and the back surface electrode 125, which are element electrodes formed on a solar cell having a passivation film formed on both sides, the first layer electrode containing glass frit, and the entire first layer electrode, The solar cell of Embodiment 1 and each component are the same as the element structure described above in that it is covered with a small metal.

  In the solar cell 100S according to the second embodiment, the inter-element connection portion 131 of the inter-element connector 130 and the back surface linear electrode 122L that is the element electrode on the back surface 100B side are made of a metal foil having irregularities. Since the main body portion 132S is connected via a distance of a thickness equal to or greater than the thickness of the main body portion 132S made of metal foil via the 132S, the main body portion 132 can be distorted by the distance, and the main body portion 132S of the inter-element connector 130 can be There is an advantage that warpage at the time of connection can be reduced.

Embodiment 3 FIG.
In the first and second embodiments, an example in which the element electrode on the back side is covered with the first layer back electrode 122a and the second layer back electrode 122b made of a dense metal material covering the first layer back electrode 122a will be described. However, as shown in FIG. 17, the element electrode on the back surface is configured such that the first layer back electrode 122a is directly covered with a sealing material 133 made of a metal material having a high density such as a solder layer.

  Also in the above configuration, if the sealing material 133 can be reliably formed so as to cover the first layer back electrode 122a, the amount of moisture permeation can be reduced even in such a structure. However, the effect of reducing the deterioration of the element is reduced as compared with the case where the back electrode having the two-layer structure is further sealed using the main body of the inter-element connection body made of metal foil.

  A dense conductive material such as solder can be used for the sealing material 133, and on the light receiving surface side, solder is formed only between the light receiving surface bus electrode 115 and the inter-element connection portion 131 of the inter-element connector.

  In addition, as shown in FIG. 18, the light-receiving surface electrode, which is the current-collecting electrode on the light-receiving surface side, includes the first-layer light-receiving surface electrode 112a containing frit glass and the second-layer light-receiving surface electrode made of a solder layer. And 112b. However, in that case, the photoelectric conversion efficiency decreases as the electrode shadow increases. On the other hand, since the light receiving surface electrode is also protected, it is possible to suppress the deterioration of the power generation characteristics. The second layer light-receiving surface electrode 112b is not limited to a solder layer, and may be a conductive film having a higher density than the first layer light-receiving surface electrode 112a that is a layer containing frit glass formed by printing and baking. That's fine. Only on the back surface side, the sealing material 133 is formed on at least the first layer back electrode of the contact portion with the semiconductor substrate, and the light receiving surface side is not formed on any portion other than on the bus electrode for current collection. In addition to suppressing a decrease in photoelectric conversion efficiency, it is possible to suppress deterioration of the element.

  The second layer back electrode is not a film obtained by printing and baking a conductive paste containing frit glass, but a portion other than the end portion of the first layer back electrode. In addition, it is important to use a continuum that does not have a through-hole reaching the first layer back electrode, such as a plating layer. Thus, in this application, the 2nd layer back surface electrode which coat | covers a 1st layer back surface electrode is a continuous body, and it passes through the inside of a 2nd layer back surface electrode in parts other than the edge part of a 2nd layer back surface electrode. This means that there is no through hole reaching the first layer back electrode. The absence of the through-holes means that there are no through-holes in a microscopic sense, and the continuum having no through-holes is a thin film such as a plating layer having a high density and high film quality, and a laminate of the thin films. In addition, it is intended to include those obtained by curing molten aluminum on the first layer back electrode.

  The glass frit electrode containing aluminum has a problem that it is particularly vulnerable to moisture. However, even if the first layer electrode is composed of a glass frit electrode containing aluminum, the second layer electrode is made of molten aluminum as the first layer. A solar cell with high moisture resistance can be obtained by forming a continuous body such as one cured on the back electrode.

  In the first to third embodiments, the electrical connection body 141 is formed of a solder plating layer, but it goes without saying that it may be another conductor layer capable of achieving electrical conduction.

  The configuration described in the above embodiment shows an example of the contents of the present invention, and can be combined with another known technique, and can be combined with other configurations without departing from the gist of the present invention. It is also possible to omit or change the part.

100, 100S solar cell, 101 n-type single crystal silicon substrate, 110 semiconductor substrate, 111 passivation film, 112 light receiving surface grid electrode, 113 light receiving surface bus electrode, 115 light receiving surface electrode, 121 passivation film, 122L back surface linear electrode, 122D Back surface dotted electrode, 122a 1st layer back surface electrode, 122b 2nd layer back surface electrode, 123 back surface surrounding adhesion region, 125 back surface electrode, 141 electrical connection body, 130 inter-element connection body, 131 inter-element connection portion, 132 main body portion, 133 Sealant, 136 Connection between strings, 137 Conductor at end of string, 200 molten solder bath, 201 solder bath, 202 molten solder, 203 solder jet part.

Claims (9)

a semiconductor substrate having a p n junction,
A light-receiving surface electrode that is partially formed on the light receiving surface of the semiconductor substrate,
A light-receiving surface passivation film that covers the light-receiving surface of the semiconductor substrate other than the region where the light-receiving surface electrode is formed;
And a back electrode which is partially formed on the back surface of the semiconductor substrate,
A back surface passivation film that covers the back surface of the semiconductor substrate other than the region where the back electrode is formed;
With
The back electrode includes a point-like electrode distributed in a dot shape over the entire back surface of the semiconductor substrate, and an enclosing region that circulates in a band shape along the peripheral edge of the back surface of the semiconductor substrate so as to surround the point-like electrode. Have
The dotted electrode and the surrounding region are a first layer back electrode containing a glass frit formed through the back surface passivation film, and a second layer back electrode directly covering the entire surface of the first layer back electrode And a two-layer structure,
A metal foil that is adhered to the second-layer back electrode of the point-like electrode and the second-layer back electrode of the enclosed region and covers the entire surface of the back surface side of the semiconductor substrate is provided. Solar cell. 2. The solar cell according to claim 1, further comprising a sealing material that seals a connection portion between the second layer back surface electrode and the metal foil in the enclosed region over the entire circumference of the semiconductor substrate .   2. The solar cell according to claim 1, wherein a melting point of the second layer back electrode is lower than a melting temperature of glass frit contained in the light receiving surface electrode and the first layer back electrode. It said second layer backside electrode and the sealing material, a solar cell according to claim 2, characterized in that it is solder.   The solar cell according to claim 4, wherein the second layer back electrode is a film formed by bringing molten solder into contact with the first layer back electrode. The solar cell according to any one of claims 1 to 5 , wherein an aluminum element is contained in at least an electrode in a region in contact with the p-type semiconductor among the light receiving surface electrode and the back surface electrode. A light-receiving surface side surface and a back surface side surface are covered with a passivation film, and a semiconductor substrate having a pn junction;
A light-receiving surface electrode formed on the light-receiving surface of the semiconductor substrate;
A back electrode partially formed on the back surface of the semiconductor substrate,
The entire back surface of the semiconductor substrate is covered with the passivation film and the back electrode distributed over the entire back surface;
The back electrode is
A first layer back electrode containing glass frit formed through the passivation film;
A second layer back electrode that directly covers the entire surface of the first layer back electrode, the second layer back electrode is a continuous body,
Only the back surface side is formed with a sealing material mainly composed of an inorganic material on at least the first layer back electrode of the contact portion with the semiconductor substrate, and the light receiving surface side is a portion other than on the bus electrode for current collection , the solar cell you characterized in that the sealing material is not formed. coating the surface of the light receiving surface side and the back surface side of the semiconductor substrate having a pn junction with a passivation film;
An electrode containing glass frit penetrating through the passivation film by forming and firing a light receiving surface electrode and a back electrode containing glass frit distributed over the light receiving surface and the back surface of the semiconductor substrate. Forming a first-layer back electrode having a layer and a light-receiving surface electrode;
A second-layer back electrode made of a continuum that directly covers the entire surface of the first-layer back electrode on the first-layer back-side electrode containing glass frit formed through the passivation film of the back-side electrode. And forming a process,
The step of forming the second layer back electrode includes:
After the first layer back electrode is baked, the method includes the step of immersing the back surface of the semiconductor substrate in a metal tank filled with molten metal and forming a second layer back electrode on the first layer back electrode,
The step of forming the second layer back electrode includes:
A method for manufacturing a solar cell, comprising: heating a semiconductor substrate having a back surface immersed in the molten metal from the metal tank, and then heating the second layer back electrode upward. The connected to the back of the periphery of the semiconductor substrate to the edge of the back electrode behind Menkakomi bonded area you lap, the step of mounting the element between connecting body made of a metal foil covering the back of the back electrode The manufacturing method of the solar cell of Claim 8 characterized by the above-mentioned.

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