JP6442018B2 - Substrate processing method - Google Patents

Description

  The present invention relates to a substrate processing method in a substrate processing apparatus.

  Conventionally, in a manufacturing process of a semiconductor substrate (hereinafter simply referred to as “substrate”), various processes are performed on the substrate using a substrate processing apparatus. For example, by supplying a chemical solution onto a substrate having a resist pattern formed on the surface, a process such as etching is performed on the surface of the substrate. Further, after the etching process is completed, a removal liquid is supplied onto the substrate to remove the resist, or a cleaning liquid is supplied onto the substrate to clean the substrate.

  When this type of substrate processing solution is used in an environment where oxygen exists, such as in the atmosphere, the oxygen may adversely affect the substrate. In particular, when a metal film is formed on the surface of the substrate, for example, when oxygen is dissolved in the treatment liquid that is the removal liquid and the oxygen concentration of the treatment liquid increases, the metal film on the substrate is oxidized by the treatment liquid. There are things to do. Since the metal oxide is etched by the treatment liquid, the metal film is reduced. It is necessary to prevent such adverse effects as much as possible. Therefore, in the substrate processing apparatus disclosed in Patent Document 1, a blocking member that faces the substrate held by the substrate holding mechanism is provided. The blocking member includes a substrate facing surface that faces the substrate, and a peripheral wall portion that protrudes from the periphery of the substrate facing surface toward the substrate holding mechanism. In the substrate processing apparatus of Patent Document 1, by providing a blocking member, it is possible to block the atmosphere on the substrate surface from the atmosphere outside the blocking member and suppress an increase in the oxygen concentration of the atmosphere on the substrate surface.

JP 2010-56218 A

  By the way, in the substrate processing apparatus of patent document 1, since the inside of the interruption | blocking member is not completely isolated with the exterior, there exists a limit in reduction of the oxygen concentration of the atmosphere of a substrate surface. In addition, there is a limit to rapidly reducing the oxygen concentration inside the blocking member. Therefore, it is conceivable to reduce the oxygen concentration in the atmosphere around the substrate by disposing the substrate in a chamber (processing chamber) and supplying an inert gas or the like into the chamber. On the other hand, in order to efficiently perform the processing on the substrate, it is preferable that the periphery of the substrate is quickly and sufficiently reduced in oxygen after being loaded into the chamber. However, since the substrate processing chamber is large, it is necessary to increase the gas flow rate in order to quickly bring the chamber into a sufficiently low oxygen state after loading the substrate.

  The present invention has been made in view of the above-described problems, and an object of the present invention is to quickly and efficiently make a low oxygen state around a substrate after being loaded into a chamber.

The invention according to claim 1 is a substrate processing method in a substrate processing apparatus, wherein the substrate processing apparatus includes a chamber having a side opening and a chamber space therein, and a horizontal state in the chamber. A substantially disk-shaped substrate holding portion that holds the substrate, a side opening opening / closing mechanism that opens and closes the side opening, and the substrate is moved relative to the chamber together with the substrate holding portion in the vertical direction. A first space in which the side opening is opened and an inert gas is supplied, and a second space provided below the first space is provided in the chamber space. The substrate processing method is separated by a member having an opening, and the substrate processing method includes: a) carrying the substrate into the chamber through the side opening while opening and closing the side opening by the side opening opening and closing mechanism; A step of holding the substrate by the substrate holding portion in one space; and b) a step of relatively moving the substrate from the first space to the second space through the opening by the substrate moving mechanism. C) supplying a processing liquid to the upper surface of the substrate in the second space; and d) moving the substrate from the second space through the opening by the substrate moving mechanism. E) a step of drying the substrate with the inert gas in the first space; and f) the side opening while the side opening is opened and closed by the side opening opening / closing mechanism. and a step of unloading the substrate to the outside of the chamber through, in the a), e) and f) step, the outer edge of the substrate holding portion, close to the opening edge of substantially circular.

A second aspect of the present invention is the substrate processing method according to the first aspect, wherein, in the step e), the first space is in a gas-filled state filled with the inert gas .

  A third aspect of the present invention is the substrate processing method according to the first or second aspect, wherein, in the step e), the substrate is rotated about a central axis that faces the vertical direction.

  Invention of Claim 4 is a substrate processing method as described in any one of Claim 1 thru | or 3, Comprising: The said substrate processing apparatus is further equipped with the shielding board arrange | positioned in the said 1st space, The size of the first space in the radial direction is larger than the opening, and the opening is closed by the shielding plate while the substrate is not disposed in the chamber.

According to the present invention, the first space in which the substrate is arranged immediately after being loaded into the chamber is a space where a drying process using an inert gas is performed. quickly to ambient, and then efficiently supplied inert gas, it is possible to hypoxia.

It is sectional drawing which shows the structure of a substrate processing apparatus. It is sectional drawing which shows a substrate processing apparatus. It is a block diagram which shows a gas-liquid supply part and a gas-liquid discharge part. It is a figure which shows the flow of a process of a board | substrate. It is sectional drawing which shows a substrate processing apparatus. It is sectional drawing which shows a substrate processing apparatus.

  FIG. 1 is a cross-sectional view showing a configuration of a substrate processing apparatus 1 according to an embodiment of the present invention. The substrate processing apparatus 1 is a single-wafer type apparatus that supplies a processing liquid to a substantially disk-shaped semiconductor substrate 9 (hereinafter simply referred to as “substrate 9”) to process the substrates 9 one by one. In FIG. 1, the provision of parallel oblique lines is omitted in the cross section of a part of the configuration of the substrate processing apparatus 1 (the same applies to other cross sectional views).

  The substrate processing apparatus 1 includes a chamber 21, a substrate holding unit 31, a substrate rotating mechanism 35, a first moving mechanism 41, a second moving mechanism 42, a shielding plate 51, a shielding plate rotating mechanism 55, and a housing 11. With. The housing 11 accommodates the chamber 21, the substrate holding part 31, the shielding plate 51, and the like. An outer opening 112 is provided on the side of the housing 11. The substrate 9 passes through the outer opening 112 when the substrate 9 is carried into and out of the housing 11. The housing 11 is further provided with an outer opening opening / closing mechanism 12. The outer opening opening / closing mechanism 12 opens and closes the outer opening 112 by moving the shutter 121 in the vertical direction. The outer opening opening / closing mechanism 12 may be one that rotates the shutter 121 or the like.

  The chamber 21 has a substantially cylindrical shape with a lid and a bottom with a central axis J1 facing in the vertical direction as a center. The chamber 21 includes a chamber main body 22 and a chamber lid portion 23. The chamber body 22 and the chamber lid portion 23 face each other in the vertical direction. The chamber main body 22 has a substantially cylindrical shape with a bottom centered on the central axis J1, and forms a main body internal space 221. The chamber lid portion 23 has a substantially cylindrical shape with a lid centered on the central axis J1, and forms a lid internal space 231. The outer diameter of the chamber body 22 and the outer diameter of the chamber lid 23 are approximately equal.

  The chamber lid portion 23 includes a lid main body portion 233, a lid bottom surface portion 234, and a tubular portion 230. The lid body 233 has a substantially cylindrical shape with a lid centered on the central axis J1. In other words, the lid main body 233 has a cup shape that is upside down. A side opening 239 is provided on the side wall of the lid main body 233. In the state shown in FIG. 1, the side opening 239 faces the outer opening 112 in the horizontal direction. The substrate 9 passes through the side opening 239 when the substrate 9 is carried into and out of the chamber 21. The lid main body 233 is further provided with a side opening opening / closing mechanism 39. The side opening / closing mechanism 39 opens and closes the side opening 239 by rotating the shutter 391. The side opening opening / closing mechanism 39 may be one that moves the shutter 391 in the vertical direction.

  The lid bottom surface portion 234 has a substantially annular plate shape centered on the central axis J1, and a substantially circular lower opening 232 is provided in the center portion. The lid bottom surface portion 234 extends radially inward from the lower end portion of the lid main body portion 233. The previously described lid internal space 231 is a space surrounded by the lid body 233 and the lid bottom surface 234. With respect to the radial direction centered on the central axis J1, the size of the lid internal space 231 is larger than the size (ie, diameter) of the lower opening 232. The upper surface 235 and the lower surface 236 of the lid bottom surface part 234 are inclined surfaces that go downward as they go radially outward. A lid portion discharge port 237 is provided at a connection portion between the lid bottom surface portion 234 and the lid body portion 233 of the chamber lid portion 23. The liquid and gas in the lid internal space 231 are discharged via the lid discharge port 237. The cylindrical portion 230 has a substantially cylindrical shape centered on the central axis J <b> 1 and extends downward from the outer edge portion of the lid bottom surface portion 234.

  The chamber body 22 includes an outer cylinder part 223 and a body bottom part 226. The outer cylinder part 223 is a substantially cylindrical shape centering on the central axis J1. The outer cylinder part 223 is located over the entire circumference on the radially outer side of the cylindrical part 230 of the chamber lid part 23. The outer cylinder part 223 is, for example, a bellows in which a plurality of circumferential fold lines and a plurality of circumferential valley fold lines are alternately arranged in the vertical direction. Below the outer tube portion 223, a bottomed substantially cylindrical main body bottom portion 226 is disposed. The lower end portion of the outer cylinder portion 223 is connected to the upper end portion of the side wall portion of the main body bottom portion 226 over the entire circumference. A main body discharge port 226 a is provided on the bottom surface of the main body bottom 226. The liquid and gas in the chamber body 22 are discharged out of the chamber body 22 (that is, outside the chamber 21) through the body discharge port 226a. In the main body bottom 226, a plurality of main body discharge ports 226a arranged in the circumferential direction may be provided.

  The chamber body 22 has a substantially circular upper opening 222 formed (enclosed) by the upper end portion of the outer cylinder portion 223. The upper opening 222 faces the lower opening 232 of the chamber lid portion 23 in the up-down direction. The upper opening 222 is larger than the lower opening 232 of the chamber lid 23. The upper opening 222 is covered with the chamber lid 23. The upper end portion of the outer cylinder portion 223 is connected to the outer edge portion of the chamber lid portion 23 by the outer cylinder connection portion 224. Specifically, the outer cylinder connection portion 224 has a substantially annular plate shape centered on the central axis J1, and outside the cylindrical portion 230, the upper end portion of the outer cylinder portion 223 and the lid bottom surface portion 234 are arranged. Connect the outer edge. The outer cylinder connecting portion 224 closes the gap between the upper end portion of the outer cylinder portion 223 and the cylindrical portion 230. In the substrate processing apparatus 1, a chamber having a sealed space (that is, a space including the lid internal space 231 and the main body internal space 221, hereinafter referred to as “chamber space”) by the chamber lid portion 23 and the chamber main body 22. 21 is formed. The above-described housing 11 covers the side, upper and lower sides of the chamber lid 23 and the chamber body 22.

  The substrate holding part 31 has a substantially disc shape centered on the central axis J <b> 1 and is provided in the chamber 21. The substrate holding unit 31 is disposed below the substrate 9 and holds the outer edge portion of the substrate 9 in a horizontal state. The diameter of the substrate holding part 31 is larger than the diameter of the substrate 9. The diameter of the substrate holding part 31 is slightly smaller than the diameter of the lower opening 232 of the chamber lid part 23. When viewed along the vertical direction, the substrate 9 and the substrate holding portion 31 are disposed in the lower opening 232 of the chamber lid portion 23. The substrate rotation mechanism 35 is disposed below the substrate holding unit 31 in the chamber 21. The substrate rotation mechanism 35 rotates the substrate 9 together with the substrate holder 31 around the central axis J1.

  The shielding plate 51 has a substantially disc shape centered on the central axis J1. The shielding plate 51 is disposed in a lid internal space 231 that is an internal space of the chamber lid portion 23. The size (that is, the diameter) of the shielding plate 51 in the radial direction is preferably larger than the diameter of the lower opening 232 of the chamber lid 23. As will be described later, the shielding plate 51 can close the lower opening 232 of the chamber lid 23. The shielding plate 51 faces the upper surface 91 of the substrate 9 held by the substrate holding unit 31 in the vertical direction.

  The shielding plate rotation mechanism 55 is disposed above the shielding plate 51. The shielding plate rotation mechanism 55 is, for example, a hollow shaft motor. By the shielding plate rotating mechanism 55, the shielding plate 51 rotates around the central axis J1 in the lid internal space 231 of the chamber lid portion 23. The rotation of the shielding plate 51 by the shielding plate rotation mechanism 55 is performed independently of the rotation of the substrate 9 by the substrate rotation mechanism 35.

  The rotating shaft 551 of the shielding plate rotating mechanism 55 is connected to the shielding plate 51 via a through hole provided in the upper portion of the housing 11 and a through hole provided in the upper portion of the chamber lid portion 23. A part around the through hole of the housing 11 and a part around the through hole of the chamber lid 23 are connected by a substantially cylindrical expansion / contraction member 111 (for example, a bellows) that can expand and contract in the vertical direction. Further, the rotary shaft 551 is provided with a substantially disc-shaped flange portion 553, and a substantially cylindrical shape in which an outer peripheral portion of the flange portion 553 and a portion around the through hole of the housing 11 can expand and contract in the vertical direction. Connected to each other by an elastic member 552 (for example, bellows). In the substrate processing apparatus 1, the space inside the housing 11 and the space outside the housing 11 are isolated by the flange portion 553 and the elastic member 552. In addition, the expansion / contraction member 111 separates the space inside the chamber lid 23 from the space inside the housing 11 and outside the chamber lid 23. As described above, the through hole in the central portion of the lid main body 233 is closed by the elastic members 111 and 552, a part of the upper portion of the housing 11, and the flange portion 553. These members that close the through hole may be regarded as a part of the lid main body 233. A cylindrical space formed by the elastic members 111 and 552 is a part of the lid internal space 231.

  For example, the first moving mechanism 41 is disposed on the upper side of the housing 11. The first moving mechanism 41 moves the shielding plate 51 in the vertical direction together with the shielding plate rotating mechanism 55. The shielding plate 51 is moved in the vertical direction in the lid internal space 231 of the chamber lid 23 by the first moving mechanism 41. In the state shown in FIG. 1, the shielding plate 51 is located near the top cover 238 of the chamber lid 23, that is, a position separated from the upper surface 91 of the substrate 9 on the substrate holding unit 31 (hereinafter referred to as “separation position”). .) As described above, since the shielding plate 51 is larger than the lower opening 232 of the chamber lid portion 23, the shielding plate 51 does not move below the lid bottom surface portion 234 via the lower opening 232. In other words, the shielding plate 51 can close the lower opening 232. The first moving mechanism 41 includes, for example, a motor and a ball screw (the same applies to the second moving mechanism 42).

  The second moving mechanism 42 is disposed on the side of the chamber body 22 and moves the chamber lid portion 23 in the vertical direction. Specifically, the chamber lid 23 is moved by the second moving mechanism 42 between the “lower position” shown in FIG. 1 and the “upper position” shown in FIG. In a state where the chamber lid portion 23 is arranged at the lower position, the lower opening 232 is located below the substrate 9 on the substrate holding portion 31, and the chamber lid portion 23 is arranged at an upper position above the lower position. In the state, the lower opening 232 is located above the substrate 9 on the substrate holding unit 31. When the chamber lid 23 moves from the lower position to the upper position, the first moving mechanism 41 also moves the shielding plate 51 in the vertical direction. Actually, the relative position of the shielding plate 51 in the vertical direction with respect to the chamber lid 23 is changed. As described above, the first moving mechanism 41 and the second moving mechanism 42 move the shielding plate 51 so as to move the shielding plate 51 in the vertical direction relative to the chamber lid 23 in the lid internal space 231 of the chamber lid 23. Mechanism. In the substrate processing apparatus 1, the main body bottom 226 and the substrate holder 31 of the chamber main body 22 do not move in the vertical direction.

  As shown in FIG. 1, an upper central nozzle 181 is provided in the rotating shaft 551 of the shielding plate rotating mechanism 55. A processing liquid discharge port that discharges the processing liquid toward the upper surface 91 of the substrate 9 is provided at the center of the lower end of the upper central nozzle 181. Pure water delivered from a pure water supply unit 814 (see FIG. 3) described later is discharged from the treatment liquid discharge port. In addition, a substantially annular gas outlet is provided around the processing liquid outlet at the lower end of the upper central nozzle 181. An inert gas delivered from an inert gas supply unit 816, which will be described later, flows from the gas outlet to a space below the shielding plate 51 (that is, a space between the lower surface 512 of the shielding plate 51 and the upper surface 91 of the substrate 9). Supplied towards. The lower end of the upper central nozzle 181 is disposed at approximately the same position as the lower surface 512 of the shielding plate 51 in the vertical direction. That is, the processing liquid discharge port and the gas outlet of the upper central nozzle 181 are provided in the central portion of the lower surface 512 of the shielding plate 51.

  In the chamber lid portion 23, a plurality of lid nozzles 182 are provided on the top lid portion 238 of the lid body portion 233. The plurality of lid nozzles 182 face the upper surface of the shielding plate 51 in the vertical direction. The plurality of lid nozzles 182 are arranged circumferentially around the central axis J1.

  FIG. 3 is a block diagram illustrating the gas-liquid supply unit 18 and the gas-liquid discharge unit 19 included in the substrate processing apparatus 1. The gas-liquid supply unit 18 includes a processing liquid supply unit 811 and a gas supply unit 812. The processing liquid supply unit 811 includes an upper central nozzle 181, a chemical solution supply unit 813, and a pure water supply unit 814. The chemical solution supply unit 813 and the pure water supply unit 814 are connected to the upper central nozzle 181 through a valve. The gas supply unit 812 includes an upper center nozzle 181, a plurality of lid nozzles 182, and an inert gas supply unit 816. The inert gas supply unit 816 is connected to the upper central nozzle 181 through a valve. The inert gas supply unit 816 is also connected to a plurality of lid nozzles 182 via valves. In the gas-liquid supply unit 18, the upper central nozzle 181 is shared by the processing liquid supply unit 811 and the gas supply unit 812. The processing liquid supply unit 811 and the gas supply unit 812 may be configured by components independent of each other. Further, the arrangement of the nozzles provided in the chamber 21 may be changed as appropriate.

  The gas-liquid discharge unit 19 includes a main body discharge port 226a, a lid part discharge port 237, a gas-liquid separation unit 193, a main body exhaust unit 194, a chemical solution recovery unit 195, a liquid discharge unit 196, and a gas-liquid separation unit 197. And a lid exhaust part 198 and a drainage part 199. A main body discharge port 226 a provided in the chamber main body 22 is connected to the gas-liquid separator 193. The gas-liquid separation unit 193 is connected to the main body exhaust unit 194, the chemical solution recovery unit 195, and the drainage unit 196 through valves. A lid discharge port 237 provided in the chamber lid 23 is connected to the gas-liquid separator 197. The gas-liquid separation unit 197 is connected to the lid exhaust unit 198 and the drainage unit 199 via valves. Each configuration of the gas-liquid supply unit 18 and the gas-liquid discharge unit 19 is controlled by the control unit 10. The first moving mechanism 41, the second moving mechanism 42, the substrate rotating mechanism 35, and the shielding plate rotating mechanism 55 (see FIG. 1) are also controlled by the control unit 10.

The chemical solution supplied from the chemical solution supply unit 813 to the substrate 9 through the upper central nozzle 181 is, for example, a polymer removing solution or an etching solution such as hydrofluoric acid or an aqueous tetramethylammonium hydroxide solution. The pure water supply unit 814 supplies pure water (DIW: deionized water) to the substrate 9 through the upper central nozzle 181. The treatment liquid supply unit 811 includes another supply unit that supplies a treatment liquid other than the chemical liquid and pure water (for example, a solvent such as isopropyl alcohol (IPA), another acid or alkali solution, a removal liquid, or the like). It may be. The gas supplied from the inert gas supply unit 816 is, for example, nitrogen (N ₂ ) gas. The gas supply unit 812 may include another supply unit that supplies an inert gas other than the nitrogen gas or a gas other than the inert gas.

  Next, the flow of processing of the substrate 9 by the substrate processing apparatus 1 will be described with reference to FIG. In the substrate processing apparatus 1, first, as shown in FIG. 1, the side opening 239 is opened by the side opening opening / closing mechanism 39 and the outer opening opening / closing mechanism 12 in a state where the chamber lid portion 23 is located at the lower position. Thus, the outer opening 112 is opened. In other words, the chamber 21 and the housing 11 are opened.

  Subsequently, the substrate 9 sequentially passes through the outer opening 112 and the side opening 239 by the external transport mechanism and is carried into the lid internal space 231. The substrate 9 moves below the shielding plate 51 arranged at the separated position, and is transferred from the transport mechanism to the substrate holding unit 31 (step S11). In step S <b> 11, the substrate 9 is held by the substrate holding part 31 above the lower opening 232 of the chamber lid part 23. When the transport mechanism is moved out of the housing 11, the side opening 239 and the outer opening 112 are closed.

  Here, in the substrate processing apparatus 1, in principle, supply of nitrogen gas from the plurality of lid nozzles 182 of the gas supply unit 812 (see FIG. 3) to the lid internal space 231 and the inside of the lid from the lid part discharge port 237. The gas in the space 231 is always discharged. Further, as described later, immediately before the chamber 21 is opened, the lid internal space 231 is in a state filled with nitrogen gas (that is, a nitrogen gas atmosphere (low oxygen atmosphere)). "Gas filled state") is maintained. Therefore, after arranging the substrate 9 in the lid internal space 231, the periphery of the substrate 9 can be quickly filled with gas.

  Subsequently, when the second moving mechanism 42 is driven, the chamber lid 23 is raised from the lower position shown in FIG. 1 and moved to the upper position shown in FIG. In other words, the substrate 9 is lowered relative to the chamber 21 together with the substrate holder 31 by the second moving mechanism 42. The second moving mechanism 42 is a substrate moving mechanism that moves the substrate 9 relative to the chamber 21 together with the substrate holding unit 31 in the vertical direction. At this time, when the first moving mechanism 41 is driven, the relative position of the shielding plate 51 with respect to the chamber lid 23 is slightly changed. Specifically, the first moving mechanism 41 causes the shielding plate 51 to slightly approach the lower opening 232 of the chamber lid portion 23 and is disposed at an approximately middle position between the lid bottom surface portion 234 and the canopy portion 238.

  As described above, when the chamber lid 23 moves from the lower position to the upper position, the substrate 9 moves from the lid internal space 231 to the main body internal space 221 through the lower opening 232 in the chamber 21 ( Step S12). Thereby, the cylindrical part 230 is located over the perimeter in the radial direction outer side of the board | substrate 9 and the board | substrate holding part 31 under the cover bottom face part 234. FIG. Actually, as the chamber lid portion 23 moves from the lower position to the upper position, the main body internal space 221 surrounded by the lower surface of the chamber main body 22 and the chamber lid portion 23 (the lower surface 236 of the lid bottom surface portion 234) increases. . At this time, since the lid internal space 231 is in a gas-filled state, the concentration of nitrogen gas is also high (the oxygen concentration is low) around the substrate 9 in the main body internal space 221.

  When the substrate 9 is positioned in the main body internal space 221, rotation of the substrate 9 by the substrate rotation mechanism 35 is started. Further, the chemical solution is supplied from the chemical solution supply unit 813 (see FIG. 3) to the upper central nozzle 181, and the substrate 9 in the main body internal space 221 is passed from the upper central nozzle 181 in the lid internal space 231 through the lower opening 232. The chemical liquid is supplied to the upper surface 91 of (step S13).

  The chemical solution from the upper central nozzle 181 is continuously supplied to the upper surface 91 of the rotating substrate 9. The chemical solution spreads radially outward on the upper surface 91 by centrifugal force, and the entire upper surface 91 is covered with the chemical solution. The chemical solution scattered from the outer peripheral edge of the rotating substrate 9 is received by the lower surface 236 of the lid bottom surface portion 234 and the inner surface of the cylindrical portion 230 and guided to the main body discharge port 226 a disposed below the cylindrical portion 230. . As described above, the lid bottom surface portion 234 and the cylindrical portion 230 serve as a cup portion that receives the processing liquid scattered from the substrate 9. The chemical liquid that has passed through the main body discharge port 226a flows into the gas-liquid separator 193 shown in FIG. In the chemical solution recovery unit 195, the chemical solution is recovered from the gas-liquid separation unit 193 and is reused after impurities and the like are removed from the chemical solution through a filter or the like.

  In the substrate processing apparatus 1, while the chemical solution is being supplied to the substrate 9, as described above, the supply of the nitrogen gas by the gas supply unit 812 is continued, and the nitrogen gas atmosphere in the chamber space can be secured. It is preferable (same when supplying pure water described later). Further, nitrogen gas may be ejected from the gas ejection port of the upper central nozzle 181, and the nitrogen gas atmosphere around the substrate 9 may be ensured more reliably.

  When a predetermined time has elapsed from the start of the supply of the chemical solution, the supply of the chemical solution from the upper central nozzle 181 to the substrate 9 is stopped. Subsequently, pure water as a rinsing liquid is supplied to the upper surface 91 of the substrate 9 via the upper central nozzle 181 by the pure water supply unit 814 (see FIG. 3) (step S14). Pure water from the pure water supply unit 814 is continuously supplied to the central portion of the upper surface 91 of the substrate 9. The pure water spreads to the outer peripheral portion of the upper surface 91 by the rotation of the substrate 9 and scatters from the outer peripheral edge of the substrate 9 to the outside. Pure water splashing from the substrate 9 is received by the lower surface 236 of the lid bottom surface portion 234 and the inner surface of the cylindrical portion 230 and guided to the main body discharge port 226a. The pure water that has passed through the main body discharge port 226a is discarded through the gas-liquid separation unit 193 and the drainage unit 196 (see FIG. 3). When a predetermined time has elapsed from the start of the supply of pure water, the supply of pure water from the pure water supply unit 814 is stopped.

  When the supply of the processing liquid (chemical solution and pure water) to the substrate 9 is finished, the second moving mechanism 42 is driven to lower the chamber lid 23 from the upper position shown in FIG. 2 to the lower position shown in FIG. And move. In other words, the substrate 9 is raised relative to the chamber 21 together with the substrate holder 31 by the second moving mechanism 42. At this time, when the first moving mechanism 41 is driven, the relative position of the shielding plate 51 to the chamber lid portion 23 is not changed. That is, the first moving mechanism 41 maintains the state in which the shielding plate 51 is disposed at an approximately middle position between the lid bottom surface portion 234 and the canopy portion 238.

  As described above, when the chamber lid 23 moves from the upper position to the lower position, the substrate 9 moves from the main body inner space 221 to the lid inner space 231 through the lower opening 232 in the chamber 21 ( Step S15). As shown in FIG. 5, in the lid internal space 231, the upper surface 91 of the substrate 9 and the lower surface 512 of the shielding plate 51 are opposed to each other in the vertical direction. That is, the shielding plate 51 is disposed at a position close to the upper surface 91 of the substrate 9 in the vertical direction (hereinafter referred to as “proximity position”). Further, the width of the gap between the outer edge of the substrate holding portion 31 and the inner edge of the lid bottom surface portion 234 (the edge of the lower opening 232) is small, and the substrate holding portion 31 causes the lid internal space 231 and the main body internal space 221 to be separated. Approximately separated.

  Subsequently, the substrate 9 arranged in the lid internal space 231 is rotated at a relatively high speed around the central axis J1 together with the substrate holding unit 31 by the substrate rotation mechanism 35. As a result, the processing liquid (mainly pure water) on the substrate 9 moves radially outward and scatters from the outer edge of the substrate 9 to the surroundings. As a result, the processing liquid on the substrate 9 is removed (step S16). Hereinafter, the process of step S16 is referred to as “drying process”. The rotation speed of the substrate 9 in step S16 is larger than the rotation speed of the substrate 9 in steps S13 and S14.

  In step S <b> 16, the processing liquid splashed from the rotating substrate 9 is received by the inner side surface of the lid main body portion 233 and the upper surface 235 of the lid bottom surface portion 234, and to the connection portion between the lid main body portion 233 and the lid bottom surface portion 234. Moving. The processing liquid (that is, the processing liquid removed from the substrate 9 in step S16) is discarded through the lid part discharge port 237, the gas-liquid separation part 197, and the drainage part 199 (see FIG. 3). In the chamber lid 23, as described above, the upper surface 235 of the lid bottom surface portion 234 is an inclined surface that goes downward as it goes outward in the radial direction. This prevents the processing liquid on the upper surface 235 from moving toward the lower opening 232 at the center. Further, since the processing liquid on the upper surface 235 moves radially outward, the processing liquid can be quickly discharged from the lid internal space 231.

  When the substrate 9 rotates in the lid internal space 231, the shield plate rotation mechanism 55 causes the shield plate 51 to be centered at a rotational speed approximately equal to the rotation speed of the substrate 9 in the same rotational direction as the substrate 9. It rotates about the axis J1. By arranging the shielding plate 51 in the proximity position, the processing liquid splashed from the substrate 9 is suppressed (or prevented) from splashing on the inner surface of the lid main body 233 and reattaching to the upper surface 91 of the substrate 9. be able to. Further, when the shielding plate 51 rotates, the processing liquid adhering to the upper surface and the lower surface 512 of the shielding plate 51 can be scattered around and removed from the shielding plate 51.

  In the drying process in step S <b> 16, in addition to the plurality of lid nozzles 182, the upper central nozzle 181 also ejects nitrogen gas. That is, nitrogen gas is supplied to the space between the lower surface 512 of the shielding plate 51 and the upper surface 91 of the substrate 9 through the gas outlet of the upper central nozzle 181. Thereby, the processing liquid can be discharged more rapidly from the space between the substrate 9 and the shielding plate 51 and the drying of the substrate 9 can be promoted. In the drying process, the continuous supply of nitrogen gas from the gas supply unit 812 to the lid internal space 231 causes the lid internal space 231 to be in a gas-filled state filled with dry nitrogen gas. At this time, the gas in the lid internal space 231 is mainly discharged by the lid exhaust part 198.

  When the drying process of the substrate 9 is completed, the rotation of the substrate 9 by the substrate rotation mechanism 35 is stopped. Further, when the first moving mechanism 41 is driven, the shielding plate 51 rises from the close position shown in FIG. 5 and is arranged at the separated position as shown in FIG. Subsequently, the side opening 239 and the outer opening 112 are opened, and the chamber 21 and the housing 11 are opened. The substrate 9 that has been subjected to the above-described series of processing is transferred to an external transport mechanism in the chamber 21. Then, the substrate 9 passes through the side opening 239 and the outer opening 112 in order by the transport mechanism, and is carried out of the housing 11 (step S17). When the transport mechanism is moved out of the housing 11, the side opening 239 and the outer opening 112 are closed.

  In the substrate processing apparatus 1, when the next substrate 9 to be processed exists (step S18), the process returns to step S11, and the substrate 9 is carried into the lid internal space 231. At this time, since the lid internal space 231 is in a gas-filled state in the drying process immediately before opening the chamber 21 (drying process in the immediately preceding step S16), the substrate 9 is placed in the lid internal space 231, and then the substrate 9 can be quickly filled with gas. And the process of step S12-S17 is performed similarly to the above.

  On the other hand, when the substrate 9 to be processed next does not exist (step S18), the first moving mechanism 41 and the second moving mechanism 42 are driven, so that the chamber lid 23 is moved upward as shown in FIG. While moving to the position, the shielding plate 51 is overlaid on the lower opening 232 of the chamber lid 23. Specifically, the outer peripheral portion of the lower surface 512 of the shielding plate 51 is in contact with the entire surface of the upper surface 235 of the lid bottom surface portion 234 in the vicinity of the lower opening 232. Thereby, the lower opening 232 of the chamber lid part 23 is obstruct | occluded by the shielding board 51, and the lid | cover internal space 231 and the main body internal space 221 are separated (step S19). Further, by continuously supplying nitrogen gas from the plurality of lid nozzles 182 to the lid internal space 231, the gas filling state in which the lid internal space 231 is filled with the dried nitrogen gas is maintained. Therefore, drying of the lid internal space 231 (reduction of humidity), that is, drying of the inner surface of the chamber lid portion 23 and the upper surface of the shielding plate 51 is also performed.

  At this time, the lower opening 232 does not necessarily need to be sealed by the shielding plate 51, and if the shielding plate 51 overlaps the lower opening 232, a minute amount is formed between the shielding plate 51 and the lid bottom surface portion 234. There may be gaps. Actually, the state in which the lower opening 232 is closed by the shielding plate 51 is maintained until the next substrate 9 to be processed is prepared. When the next substrate 9 to be processed is prepared, the processing of the substrate 9 shown in FIG. 4 is started (resumed).

  As described above, in the substrate processing apparatus 1, when the substrate 9 is disposed in the main body internal space 221, the processing liquid is supplied to the upper surface 91 of the substrate 9 and the substrate 9 is disposed in the lid internal space 231. At this time, the substrate 9 is dried using the gas from the gas supply unit 812 while rotating the substrate 9. As described above, the lid internal space 231 in which the substrate 9 is arranged immediately after being loaded into the chamber 21 is a space where a drying process using gas (a drying process for the substrate 9 processed immediately before) is performed. After carrying into the chamber 21, the periphery of the substrate 9 can be quickly and efficiently filled with gas.

  In addition, when the gas supplied from the gas supply unit 812 is an inert gas such as nitrogen gas, the processing of the substrate 9 with the processing liquid in a low oxygen atmosphere can be performed quickly. As a result, the oxidation or the like of the metal film provided on the upper surface 91 of the substrate 9 can be suppressed. In the drying process, the gas supply unit 812 supplies gas to the space between the lower surface 512 of the shielding plate 51 and the upper surface 91 of the substrate 9 via the gas outlet provided at the center of the lower surface 512 of the shielding plate 51. By doing so, the substrate 9 can be efficiently dried.

  By providing the outer opening 112 that can be opened and closed in the housing 11, it is possible to prevent outside air from entering the lid internal space 231. Further, when the substrate 9 is not disposed in the chamber 21, the shielding plate 51 closes the lower opening 232, so that the gas filling state can be easily maintained in the lid internal space 231.

  The substrate processing apparatus 1 can be variously modified.

  In the housing 11, a gas outlet of the gas supply unit 812 may be provided, and gas may be supplied into the housing 11 in addition to the lid internal space 231. In this case, it is possible to further suppress the outside air from entering the lid internal space 231.

  Depending on the type of treatment for the substrate 9, the treatment liquid supply unit 811 may supply droplets or vapor of the treatment liquid to the upper surface 91 of the substrate 9.

  In the example shown in FIG. 1, the above-described substrate moving mechanism includes a second moving mechanism 42 that moves the chamber lid portion 23, but the substrate moving mechanism moves, for example, the substrate holding portion 31 in the vertical direction in the chamber 21. It may be a mechanism to perform.

  In the example shown in FIG. 1, the shielding plate moving mechanism includes a first moving mechanism 41 that moves the shielding plate 51 and a second moving mechanism 42 that moves the chamber lid portion 23, but the shielding plate 51 is close to the first moving mechanism 41. From the viewpoint of selectively disposing at the position and the separation position, the substrate moving mechanism that moves the substrate holding portion 31 in the vertical direction as described above may also serve as the shielding plate moving mechanism.

  In the chamber body 22, a plurality of cups arranged concentrically may be provided inside the cylindrical portion 230. In this case, when the type of the processing liquid supplied onto the substrate 9 is switched, it is preferable that the cup (including the cylindrical portion 230) that receives the processing liquid from the substrate 9 is also switched. Thereby, when a plurality of types of processing liquids are used, the plurality of processing liquids can be easily separated and collected or discarded.

  In the substrate processing apparatus 1, processing for various substrates other than the semiconductor substrate may be performed.

  The configurations in the above-described embodiments and modifications may be combined as appropriate as long as they do not contradict each other.

DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 9 Substrate 11 Housing 12 Outer opening opening / closing mechanism 21 Chamber 22 Chamber body 23 Chamber lid part 31 Substrate holding part 35 Substrate rotating mechanism 39 Side opening opening / closing mechanism 41 First moving mechanism 42 Second moving mechanism 51 Shielding plate 91 (Substrate) upper surface 112 outer opening 181 upper central nozzle 198 lid exhaust part 221 main body inner space 222 upper opening 231 lid inner space 232 lower opening 239 side opening 512 lower surface (of shielding plate) 811 treatment liquid supply part 812 gas supply part J1 center axis

Claims (4)

A substrate processing method in a substrate processing apparatus, comprising:
The substrate processing apparatus is
A chamber having a side opening and a chamber space therein;
A substantially disk-shaped substrate holding portion for holding the substrate in a horizontal state in the chamber;
A side opening opening and closing mechanism for opening and closing the side opening;
A substrate moving mechanism for moving the substrate relative to the chamber together with the substrate holding unit;
With
In the chamber space, a first space in which the side opening is opened and an inert gas is supplied is separated from a second space provided below the first space by a member having an opening. ,
The substrate processing method comprises:
a) A substrate is carried into the chamber through the side opening while the side opening is opened and closed by the side opening opening / closing mechanism, and the substrate is held by the substrate holding portion in the first space. Process,
b) a step of relatively moving the substrate from the first space to the second space through the opening by the substrate moving mechanism;
c) supplying a processing liquid to the upper surface of the substrate in the second space;
d) a step of relatively moving the substrate from the second space to the first space through the opening by the substrate moving mechanism;
e) drying the substrate with the inert gas in the first space;
f) carrying the substrate out of the chamber through the side opening while opening and closing the side opening by the side opening opening and closing mechanism;
Equipped with a,
Wherein a), e) and f) in the process, the outer edge of the substrate holder is a substrate processing method characterized that you close to the opening edge of substantially circular. The substrate processing method according to claim 1,
In the step e), the substrate processing method is characterized in that the first space is filled with the inert gas . The substrate processing method according to claim 1, wherein:
In the step e), the substrate is rotated about a central axis facing the vertical direction. A substrate processing method according to any one of claims 1 to 3,
The substrate processing apparatus further includes a shielding plate disposed in the first space,
The size of the first space in the radial direction is larger than the opening;
The substrate processing method, wherein the opening is closed by the shielding plate while the substrate is not disposed in the chamber.

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