JP6439505B2 - Semiconductor devices, electronic equipment and mobile objects - Google Patents

Description

  The present invention relates to a semiconductor device, an electronic apparatus, and a moving object.

  For example, the MEMS vibrator of Patent Document 1 has a configuration in which a recess is provided on the upper surface of a silicon substrate, a vibration element is disposed in the recess, and the opening of the recess is covered with a lid. In addition, a circuit electrically connected to the functional element is formed around the recess, and the functional element and the circuit are electrically connected via a pillar portion provided in the recess. Moreover, the column part is joined with the lid part, and also functions as a support part that supports the lid part from below. Here, Patent Document 1 does not describe anything about the shape of the connection portion between the column portion and the lid portion, but if the outline of the connection portion has a right angle or an acute angle corner, A corner | angular part becomes a starting point of the crack to a cover part, and there exists a possibility that a cover part may be damaged.

US Pat. No. 5,798,283

  An object of the present invention is to provide a semiconductor device, an electronic apparatus, and a movable body that can reduce breakage of a lid and exhibit excellent reliability.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following application examples.

[Application Example 1]
The semiconductor device of this application example includes a substrate,
A recess disposed on the substrate and having an opening opening in a normal direction of the substrate;
A lid that covers the opening of the recess;
A lump disposed in the recess and connected to the lid,
In the plan view of the substrate, the outline of the connecting portion between the lump portion and the lid portion includes at least one of a bent portion bent at an obtuse angle and a bent portion bent.
As a result, stress concentration on the connecting portion between the lump portion and the lid portion is alleviated, so that damage to the lid portion is reduced, and a semiconductor device capable of exhibiting excellent reliability is obtained.

[Application Example 2]
In the semiconductor device according to this application example, it is preferable that the lump has a column portion that is disposed apart from a side wall of the recess.
Thereby, the freedom degree of arrangement | positioning of a lump part increases and it can support a cover part effectively.

[Application Example 3]
In the semiconductor device of this application example, it is preferable that the lump has a protrusion that protrudes from the side wall of the recess toward the inside of the recess.
Thereby, since a lump part can be integrally formed with the wall part of a recessed part, the structure of a lump part becomes simpler.

[Application Example 4]
In the semiconductor device of this application example, in the plan view of the substrate, the outer shape of the lump has at least one of a lump-side bent portion bent at an obtuse angle and a lump-side bent portion bent. Preferably it is.
Thereby, the stress concentration on the lump part is reduced, and breakage of the lump part can be reduced.

[Application Example 5]
In the semiconductor device of this application example, it is preferable that the internal space between the recess and the lid is sealed.
Thereby, the internal space can be maintained in a predetermined atmosphere.

[Application Example 6]
In the semiconductor device of this application example, it is preferable to have a functional element arranged at the bottom of the recess.
Thereby, a semiconductor device can exhibit a predetermined function.

[Application Example 7]
In the semiconductor device of this application example, it is preferable that the lump portion also serves as at least a part of a wiring electrically connected to the functional element.
Thereby, a lump part can be used effectively.

[Application Example 8]
In the semiconductor device of this application example, it is preferable that the functional element is a vibration element.
Thereby, a semiconductor device can be used as an oscillator, for example.

[Application Example 9]
In the semiconductor device of this application example, the functional element is preferably a pressure sensor element.
Thereby, a semiconductor device can be used as a pressure sensor.

[Application Example 10]
An electronic apparatus according to this application example includes the semiconductor device according to the application example described above.
As a result, a highly reliable electronic device can be obtained.

[Application Example 11]
The moving body of this application example includes the semiconductor device of the above application example.
Thereby, a mobile body with high reliability is obtained.

1 is a cross-sectional view showing a semiconductor device according to a first embodiment of the present invention. It is a top view which shows the vibration element which the semiconductor device shown in FIG. 1 has. It is a top view which shows the connection part of the support part and cover part which the semiconductor device shown in FIG. 1 has. It is a top view which shows the connection part of the support part and cover part which the semiconductor device shown in FIG. 1 has. It is a top view which shows the connection part of the support part and cover part which the semiconductor device which concerns on 2nd Embodiment of this invention has. It is a top view which shows the connection part of the support part and cover part which the semiconductor device which concerns on 3rd Embodiment of this invention has. It is a top view which shows the connection part of the support part and cover part which the semiconductor device which concerns on 4th Embodiment of this invention has. It is a top view which shows the connection part of the support part and cover part which the semiconductor device which concerns on 5th Embodiment of this invention has. It is a top view which shows the connection part of the support part and cover part which the semiconductor device which concerns on 6th Embodiment of this invention has. It is sectional drawing which shows the semiconductor device which concerns on 7th Embodiment of this invention. It is a top view which shows the pressure sensor element which the semiconductor device shown in FIG. 10 has. It is a figure which shows the bridge circuit containing the pressure sensor element shown in FIG. 1 is a perspective view illustrating a configuration of a mobile (or notebook) personal computer including a semiconductor device of the present invention. It is a perspective view which shows the structure of a mobile telephone (PHS is also included) provided with the semiconductor device of this invention. It is a perspective view which shows the structure of a digital still camera provided with the semiconductor device of this invention. It is a perspective view which shows a mobile body provided with the semiconductor device of this invention.

  Hereinafter, a semiconductor device, an electronic apparatus, and a moving body of the present invention will be described in detail based on embodiments shown in the accompanying drawings.

<First Embodiment>
FIG. 1 is a sectional view showing a semiconductor device according to the first embodiment of the present invention. FIG. 2 is a plan view showing a vibration element included in the semiconductor device shown in FIG. 3 and FIG. 4 are plan views each showing a connection portion between the support portion and the lid portion of the semiconductor device shown in FIG. 1 is a cross-sectional view taken along line AA in FIG. In FIG. 2, the lid is not shown. In the following description, for convenience of explanation, the upper side in FIG. 1 is also referred to as “upper” and the lower side is also referred to as “lower”.

  A semiconductor device 1 shown in FIG. 1 is used as an oscillator that oscillates a signal having a predetermined frequency. As shown in FIG. 1, such a semiconductor device 1 includes a base substrate 2, a vibration element 3 as a functional element, a lid 4, a cavity (internal space) 5, a semiconductor circuit (circuit) 6, and the like. ,have.

The base substrate 2 includes a semiconductor substrate (substrate) 21 having a depression 24 opened on the upper surface, a first insulating film 22 laminated on the inner surface of the depression 24, and a second insulation laminated on the first insulating film 22. And a film 23. The semiconductor substrate 21 is made of, for example, a silicon substrate, the first insulating film 22 is made of, for example, a silicon oxide film (SiO ₂ film), and the second insulating film 23 is made of, for example, a silicon nitride film (SiN film). It consists of For example, a silicon substrate obtained by epitaxially growing a silicon single crystal on a silicon single crystal substrate may be used. However, the semiconductor substrate 21 is not limited to a silicon substrate, and for example, an SOI substrate can be used. Further, the first insulating film 22 and the second insulating film 23 are not particularly limited as long as the semiconductor substrate 21 can be protected at the time of manufacturing and a short circuit of each part can be prevented.

  Further, the semiconductor circuit 6 is formed in a portion outside the recess 24 of the semiconductor substrate 21. The semiconductor circuit 6 includes, for example, an oscillation circuit for exciting the vibration element 3. In addition, for example, an output frequency from the phase synchronization circuit (PLL circuit) or the oscillation circuit is multiplied by an integer as necessary. A multiplication circuit (frequency adjustment circuit), an output circuit that converts a signal into a predetermined output format, and a memory. Such a semiconductor circuit 6 includes circuit elements such as a MOS transistor, a capacitor, an inductor, a resistor, a diode, and a wiring as necessary.

  Thus, by making the semiconductor circuit 6 in the semiconductor device 1, for example, the overall size of the apparatus can be reduced as compared with the case where the semiconductor device 1 and the semiconductor circuit 6 are separate. . In addition, since the semiconductor circuit 6 can be disposed close to the vibration element 3, it is difficult for noise to be applied to the signal output from the vibration element 3, and the semiconductor device 1 with high oscillation accuracy is obtained. In FIG. 1, only the MOS transistor 61 is illustrated as the semiconductor circuit 6 for convenience of explanation.

  As shown in FIGS. 1 and 2, a frame-like wall portion 71 and four columnar column portions (lumped portions) 72 are provided in the recess 24.

  The four column portions 72 are provided inside the wall portion 71 so as to be separated from the wall portion 71, and are provided so as to be separated from each other along the periphery of the vibration element 3. Each column portion 72 has a substantially square plan view shape. These four column portions 72 function as support portions that support the lid portion 4 from below. Therefore, bending deformation downward (inside the hollow portion 5) of the lid portion 4 is reduced, and contact between the lid portion 4 and the vibration element 3 can be prevented. In particular, by disposing the column part 72 away from the wall surface of the recess 7, the degree of freedom of arrangement of the column part 72 is increased, and the lid part 4 can be supported more effectively.

  The four pillars 72 are electrically connected to the vibration element 3 and are used as a part of wiring (electrical path) for drawing out the electrode of the vibration element 3 to the outside. As described above, the pillar portion 72 also serves as a part of the wiring, so that the pillar portion 72 can be used effectively, there is no need to separately route the wiring, the device configuration of the semiconductor device 1 becomes simple, and the semiconductor device 1 Can be miniaturized. Such a column part 72 is made of, for example, polysilicon doped (diffused or implanted) with an impurity such as phosphorus or boron. Note that the number of column portions 72 is not limited to four.

  The wall portion 71 has a frame shape and is erected on the bottom portion of the recess 24 so as to surround the vibration element 3 and the column portion 72 in plan view. A recess 7 is formed by the wall 71 and the bottom of the recess 24, and the space inside the recess 7 is a cavity 5. The wall portion 71 includes a protruding portion 711 protruding inward so as to enter between the adjacent column portions 72a and 72b, and a protruding portion 712 protruding inward so as to enter between the adjacent column portions 72b and 72c. A protrusion 713 that protrudes inward so as to enter between the adjacent pillars 72c and 72d, and a protrusion 714 that protrudes inward so as to enter between the adjacent pillars 72d and 72a. . Thus, by connecting the protruding portions 711 to 714 to the wall portion 71, the protruding portions 711 to 714 can be integrally formed with the wall portion 71, and the configuration becomes simpler.

  By providing such protrusions 711, 712, 713, and 714, the volume of the cavity 5 can be reduced. Therefore, the etching time for forming the cavity 5 can be shortened, or the evacuation time for vacuum-sealing the cavity 5 can be shortened. Moreover, these four protrusion parts 711-714 function as a support part which supports the cover part 4 from the downward direction with the pillar part 72. FIG. Therefore, the downward deformation of the lid 4 is further reduced.

Such a wall portion 71 is made of, for example, polysilicon. Further, a reinforcing portion 73 that reinforces the wall portion 71 is provided on the outer peripheral side of the wall portion 71 (between the wall portion 71 and the inner surface of the recess 24). Thereby, the mechanical strength of the semiconductor device 1 can be increased. Such a reinforcing portion 73 is made of, for example, silicon dioxide (SiO ₂ ).

  The lid 4 is provided on the upper surface side of the base substrate 2 and closes the opening of the recess 7. Thereby, the cavity 5 hermetically sealed between the recess 7 and the lid 4 is formed. The vibration element 3 is disposed in the hollow portion 5, whereby the vibration element 3 can be protected and the vibration element 3 can be driven in a predetermined environment (a stable environment). Therefore, the reliability of the semiconductor device 1 is improved.

  As shown in FIG. 1, such a lid portion 4 is connected to the upper surfaces of the column portions 72 and the projecting portions 711 to 714 and is laminated on the coating layer 41 and the coating layer 41 supported by them. The sealing layer 42 and the structure 43 laminated on the sealing layer 42 and the base substrate 2 are included.

  The covering layer 41 includes an insulating layer 411 and a conductive layer 412 stacked on the insulating layer 411. Further, the coating layer 41 has a plurality of communication holes 41 a that communicate between the inside and the outside of the cavity 5. The communication hole 41a is a release hole for removing the sacrificial layer in the cavity 5 by etching during manufacturing. The communication hole 41a is preferably arranged so as not to overlap with the vibration part electrode 31 in a plan view of the base substrate 2. Thereby, when sealing the communication hole 41a with the sealing layer 42, it can reduce that the sealing material which passed through the communication hole 41a adheres to the vibration part electrode 31, and the drive frequency ( (Resonance frequency) can be reduced.

  In addition, the conductive layer 412 has a contact portion 412 a that is provided through the insulating layer 411 and is electrically connected to the column portion 72. Such a contact portion 412 a is used as a part of wiring for connecting the vibration portion electrode 31 to the semiconductor circuit 6, similarly to the column portion 72.

  In such a covering layer 41, the insulating layer 411 is made of, for example, silicon nitride (SiN), and the conductive layer 412 is made of, for example, polysilicon doped (diffused or implanted) with impurities such as phosphorus and boron. It is configured.

  The sealing layer 42 is laminated on the covering layer 41 and closes the communication hole 41a. Thereby, the cavity 5 is hermetically sealed. Thus, by sealing the cavity 5 in an airtight manner, the atmosphere of the vibration element 3 accommodated in the cavity 5 can be stabilized. The cavity 5 is preferably in a vacuum state (depressurized state). Thereby, viscous resistance decreases and the vibration element 3 can be driven more efficiently and stably.

  In addition, the sealing layer 42 includes a contact portion 421 that is arranged on the contact portion 412a independently in an island shape from the periphery and is electrically connected to the contact portion 412a. Such a contact portion 421 is used as a part of wiring for connecting the vibration portion electrode 31 to the semiconductor circuit 6, similarly to the column portion 72 and the contact portion 412 a.

  As such a sealing layer 42, metal materials (conductive material), such as Al, Cu, W, Ti, TiN, can be used, for example.

  The structure 43 includes an interlayer insulating film 431, a wiring layer 432 formed on the interlayer insulating film 431, an interlayer insulating film 433 formed on the wiring layer 432 and the interlayer insulating film 431, and the interlayer insulating film 433. The wiring layer 434 is formed, and the surface protective layer 435 is formed on the wiring layer 434 and the interlayer insulating film 433. Among these, the wiring layers 432 and 434 function as wiring of the semiconductor circuit 6, and the semiconductor circuit 6 is drawn to the upper surface of the semiconductor device 1 by the wiring layers 432 and 434, and a part of the wiring layer 434 is external connection terminal 434. It has become. The surface protective layer 435 protects the semiconductor device 1 from moisture, dust, scratches, and the like.

In such a structure 43, the interlayer insulating films 431 and 433 are made of, for example, silicon dioxide (SiO ₂ ), and the wiring layers 432 and 434 are made of, for example, aluminum (Al). The protective layer 435 is made of, for example, silicon dioxide (SiO ₂ ), silicon nitride (SiN), polyimide, epoxy resin, or the like.

  The vibration element 3 is a capacitance type (electrostatic drive type) vibration element, and is disposed at the bottom of the recess 7. Thus, by arranging the vibration element 3 at the bottom of the recess 7, the semiconductor device 1 can be reduced in height.

  As shown in FIG. 2, the vibration element 3 has a vibration part electrode 31 and a substrate electrode 32 provided on the base substrate 2.

  The vibrating portion electrode 31 is disposed between the fixed portion 311 provided on the bottom surface of the concave portion 7, the vibrating body 312 opposed to the fixed portion 311 with a gap therebetween, and between the vibrating body 312 and the fixed portion 311. And a support portion 313 that supports the body 312 on the fixing portion 311. The vibrating body 312 includes a base portion 312a supported by the support portion 313 and four vibration portions 312b, 312c, 312d, and 312e connected to the base portion 312a, and has a substantially cross shape. . In addition, the number of vibration parts is not limited to four of this embodiment, 1-3 may be sufficient and five or more may be sufficient.

  On the other hand, the substrate electrode 32 includes an electrode 321 provided on the bottom surface of the concave portion 7 and disposed to face the vibrating portion 312b, and an electrode 322 provided on the bottom surface of the concave portion 7 and disposed to face the vibrating portion 312d. Have.

  Each of the vibrating portion electrode 31 and the substrate electrode 32 is made of polysilicon doped (diffused or implanted) with impurities such as phosphorus and boron, for example.

In addition, the vibration part electrode 31 and the substrate electrode 32 are electrically connected to the semiconductor circuit 6 via the column part 72, respectively, and a predetermined frequency is provided between the semiconductor circuit 6 and the vibration part electrode 31 and the substrate electrode 32. When an alternating voltage (a frequency substantially equal to the resonance frequency of the vibration part electrode 31) is applied, the vibration parts 312b and 312d and the vibration parts 312c and 312e are generated by the electrostatic force generated between the vibration body 312 and the substrate electrode 32. And vibrate in reverse phase. Then, a signal (frequency signal) based on this vibration is output from the substrate electrode 32 (or the vibration part electrode 31), and a signal having a predetermined frequency can be output by processing the output signal by the semiconductor circuit 6. .
The configuration of the semiconductor device 1 has been briefly described above.

  Next, the connection part between the support part (the pillar part 72 and the protruding parts 711 to 714), which is also a feature of the semiconductor device 1, and the lid part 4 will be described in detail.

  As shown in FIG. 3A, the outline of the connecting portion 91 between the column portion 72 and the lid portion 4 has a substantially rectangular shape having four sides 911, 912, 913, and 914 in plan view. A bent portion 915 is provided at each corner. Hereinafter, each of the bent portions 915 will be described in detail. Since the bent portions 915 have the same configuration, the bent portion 915 between the sides 911 and 912 will be described as a representative. The description of the three bent portions 915 is omitted.

  As shown in FIG. 3B, the bent portion 915 is located between the sides 911 and 912, and has a straight portion 915a inclined with respect to both the sides 911 and 912. The straight line portion 915a is formed shorter than the sides 911 and 912. Thereby, the bending part 915 can be made small. The relationship between the length L1 of the straight portion 915a and the length L2 of the sides 911 and 912 is not particularly limited, but it is preferable to satisfy the relationship of 0.1L2 ≦ L1 ≦ 0.2L2, for example. By satisfying such a relationship, the above effect becomes more remarkable.

  The angle θ11 formed by the side 911 and the straight line portion 915a and the angle θ12 formed by the side 912 and the straight line portion 915a are both obtuse. That is, the relationship 90 ° <θ11 <180 ° is satisfied, and the relationship 90 ° <θ12 <180 ° is satisfied. By having such a bent portion 915, the stress concentration on the connection portion 91 is reduced, and the occurrence of cracks in the lid portion 4 starting from the connection portion 91 can be reduced.

  As shown in FIG. 4A, the outline of the connecting portion 92 between the protruding portion 711 and the lid portion 4 has three sides 921, 922, and 923 in a plan view, and is positioned on the distal end side of the protruding portion 711. Bent portions 925 are provided at the two corners. Hereinafter, each bent portion 925 will be described in detail. Since the bent portions 925 have the same configuration, the bent portion 925 between the sides 921 and 922 will be described as a representative, and the side 922 will be described below. , 923, the description of the bent portion 925 is omitted.

  As shown in FIG. 4B, the bent portion 925 is located between the side 921 and the side 922, and has a linear portion 925 a that is inclined with respect to both the sides 921 and 922. The straight line portion 925a is formed shorter than the sides 921 and 922. Thereby, the bending part 925 can be made small. The relationship between the length L3 of the straight portion 925a and the length L4 of the sides 921 and 922 is not particularly limited, but it is preferable to satisfy the relationship of 0.1L4 ≦ L3 ≦ 0.2L4, for example. By satisfying such a relationship, the above effect becomes more remarkable.

  Further, the angle θ21 formed between the side 921 and the straight line portion 925a and the angle θ22 formed between the side 922 and the straight line portion 925a are both obtuse. That is, the relationship 90 ° <θ21 <180 ° is satisfied, and the relationship 90 ° <θ22 <180 ° is satisfied. By having such a bent portion 925, the stress concentration on the connection portion 92 is reduced, and the occurrence of cracks in the lid portion 4 starting from the connection portion 92 can be reduced.

  The connecting portion 92 between the protruding portion 711 and the lid portion 4 has been described above. However, the connecting portion between the protruding portion 712 and the lid portion 4, the connecting portion between the protruding portion 713 and the lid portion 4, and the protruding portion 714 and the lid portion 4. The connection part is also similar to the connection part 92. Therefore, the description of these connecting portions is omitted.

  As described above, by devising the shapes of the connecting portions 91 and 92 and reducing the occurrence of cracks in the lid portion 4, the mechanical strength of the lid portion 4 can be maintained and the cavity portion 5 can be maintained. Airtightness can be maintained. Furthermore, disconnection of the semiconductor circuit 6 can be reduced. Therefore, the reliability of the semiconductor device 1 is improved.

Second Embodiment
FIG. 5 is a plan view showing a connection portion between a support portion and a lid portion included in a semiconductor device according to a second embodiment of the present invention.

  Hereinafter, the semiconductor device according to the second embodiment of the present invention will be described. The description will focus on differences from the above-described embodiment, and description of similar matters will be omitted.

  The semiconductor device of the second embodiment is the same as that of the first embodiment described above except that the shape of the connecting portion between the support portion and the lid portion is different. In addition, the same code | symbol is attached | subjected to the structure similar to embodiment mentioned above.

  As shown in FIG. 5A, the outline of the connecting portion 91 has a substantially regular hexagonal shape in plan view. By setting it as such a shape, it will be in the state by which the connection part 91 was provided with the bending part 915 bent to an obtuse angle. Therefore, the stress concentration on the connection portion 91 is reduced, and the generation of cracks on the lid portion 4 starting from the connection portion 91 can be reduced. In addition, the planar view shape of the connection part 91 is not limited to a hexagon, and may be a pentagon or a polygon that is a heptagon or more. Even with such a shape, each corner can be made an obtuse angle, and the same effect can be exhibited.

  On the other hand, as shown in FIG. 5B, the outline of the connecting portion 92 has sides 921, 922, 923, and 924 in a plan view, and the sides 921, 922, sides 922, 923, and sides 923, 924 are They are connected at an obtuse angle. As a result, the bent portion 925 is provided on the distal end side of the protruding portion 711. Therefore, the stress concentration on the connecting portion 92 is reduced, and the occurrence of cracks in the lid portion 4 starting from the connecting portion 92 can be reduced. The connecting portion between the protruding portion 712 and the lid portion 4, the connecting portion between the protruding portion 713 and the lid portion 4, and the connecting portion between the protruding portion 714 and the lid portion 4 have the same configuration as the connecting portion 92.

  Also according to the second embodiment, the same effects as those of the first embodiment described above can be exhibited.

<Third Embodiment>
FIG. 6 is a plan view showing a connection portion between a support portion and a lid portion included in a semiconductor device according to a third embodiment of the present invention.

  Hereinafter, the semiconductor device according to the third embodiment of the present invention will be described. The description will focus on differences from the above-described embodiment, and description of similar matters will be omitted.

  The semiconductor device of the third embodiment is the same as that of the first embodiment described above except that the shape of the connecting portion between the support portion and the lid portion is different. In addition, the same code | symbol is attached | subjected to the structure similar to embodiment mentioned above.

  As shown in FIG. 6A, the outline of the connecting portion 91 has a substantially quadrangular shape (substantially square shape) having four sides 911, 912, 913, and 914 in a plan view. A curved portion 916 is provided. The curved portion 916 includes a curved portion 916a that is continuously connected to adjacent sides. The curved portion 916a is curved in a substantially arc shape. By having such a curved part 916, the stress concentration to the connection part 91 is reduced, and the occurrence of cracks in the lid part 4 starting from the connection part 91 can be reduced. Note that the curved portion 916a is not limited to an arc shape as long as it is curved.

  As shown in FIG. 6B, the connecting portion 92 has three sides 921, 922, and 923 in a plan view, and a curved portion 926 is provided at two corners located on the distal end side of the protruding portion 711. It has been. The curved portion 926 has a curved portion 926a that is continuously connected to adjacent sides. The curved portion 926a is curved in a substantially arc shape. By setting it as such a structure, the stress concentration to the connection part 92 is reduced and generation | occurrence | production of the crack to the cover part 4 which makes the connection part 92 the starting point can be reduced. Note that the curved portion 926a is not limited to an arc shape as long as it is curved. The connecting portion between the protruding portion 712 and the lid portion 4, the connecting portion between the protruding portion 713 and the lid portion 4, and the connecting portion between the protruding portion 714 and the lid portion 4 have the same configuration as the connecting portion 92.

  Also according to the third embodiment, the same effects as those of the first embodiment described above can be exhibited.

<Fourth embodiment>
FIG. 7 is a plan view showing a connection portion between a support portion and a lid portion included in a semiconductor device according to a fourth embodiment of the present invention.

  Hereinafter, the semiconductor device according to the fourth embodiment of the present invention will be described. The description will focus on differences from the above-described embodiment, and the description of the same matters will be omitted.

  The semiconductor device of the fourth embodiment is the same as that of the first embodiment described above except that the shape of the connecting portion between the support portion and the lid portion is different. In addition, the same code | symbol is attached | subjected to the structure similar to embodiment mentioned above.

  As shown in FIG. 7A, the outline of the connecting portion 91 has a circular shape in plan view. In other words, the entire area of the connection portion 91 is configured by the bending portion 916. By setting it as such a structure, the stress concentration to the connection part 91 is reduced and generation | occurrence | production of the crack to the cover part 4 from the connection part 91 can be reduced. In addition, the planar view shape of the connecting portion 91 is not limited to a circle, and may be an ellipse or an oval.

  On the other hand, as shown in FIG. 7B, the outline of the connecting portion 92 includes two sides 921 and 922 and a curved portion 926 that connects the sides 921 and 922 on the distal end side of the protruding portion 711. ing. The curved portion 926 has a semicircular arc-shaped curved portion 926 a that is continuously connected to the side 921 and the side 922. By setting it as such a structure, the stress concentration to the connection part 92 is reduced and generation | occurrence | production of the crack to the cover part 4 which makes the connection part 92 the starting point can be reduced. The connecting portion between the protruding portion 712 and the lid portion 4, the connecting portion between the protruding portion 713 and the lid portion 4, and the connecting portion between the protruding portion 714 and the lid portion 4 have the same configuration as the connecting portion 92.

  According to the fourth embodiment, the same effect as that of the first embodiment described above can be exhibited.

<Fifth Embodiment>
FIG. 8 is a plan view showing a connection portion between a support portion and a lid portion included in a semiconductor device according to a fifth embodiment of the present invention.

  Hereinafter, a semiconductor device according to the fifth embodiment of the present invention will be described. The description will focus on differences from the above-described embodiment, and the description of the same matters will be omitted.

  The semiconductor device of the fifth embodiment is the same as that of the second embodiment described above except that the shape of the support portion is different. In addition, the same code | symbol is attached | subjected to the structure similar to embodiment mentioned above.

  As shown in FIG. 8A, the column portion 72 has a substantially regular hexagonal shape in plan view. By forming the column portion 72 in such a shape, the column portion 72 can be provided with a bent portion (support portion side bent portion) 721 that is bent at an obtuse angle. Therefore, stress concentration on the column portion 72 is reduced, and damage to the column portion 72, breakage of the connection portion between the column portion 72 and the lid portion 4, and the like can be reduced. In particular, in the present embodiment, since the planar view shape of the pillar portion 72 corresponds to the planar view shape of the connection portion 91 (since it is substantially similar), the stress concentration on the connection portion 91 is further reduced. Thus, the breakage of the connecting portion 91 can be reduced more effectively. In addition, the planar view shape of the column part 72 is not limited to a hexagon, and may be a pentagon or a polygon of heptagon or more. Even with such a shape, each corner can be made an obtuse angle, and the same effect can be exhibited.

  On the other hand, as shown in FIG. 8B, the protrusion 711 has sides 711a, 711b, 711c, and 711d in plan view, and the sides 711a, 711b, sides 711b, 711c, and sides 711c, 711d are obtuse angles. Connected at an angle. As a result, the bent portion 711 ′ is provided on the distal end side of the protruding portion 711. Therefore, stress concentration on the projecting portion 711 is reduced, and damage to the projecting portion 711, breakage of the connection portion between the projecting portion 711 and the lid portion 4, and the like can be reduced. Note that the protrusions 712, 713, and 714 have the same configuration as the protrusion 711.

  According to the fifth embodiment, the same effect as that of the first embodiment described above can be exhibited.

<Sixth Embodiment>
FIG. 9 is a plan view showing a connection portion between a support portion and a lid portion included in a semiconductor device according to a sixth embodiment of the present invention.

  Hereinafter, the semiconductor device according to the sixth embodiment of the present invention will be described. The description will focus on differences from the above-described embodiment, and the description of the same matters will be omitted.

  The semiconductor device of the sixth embodiment is the same as that of the fourth embodiment described above except that the shape of the support portion is different. In addition, the same code | symbol is attached | subjected to the structure similar to embodiment mentioned above.

  As shown in FIG. 9A, the column portion 72 has a circular shape in plan view. In other words, the entire area of the column part 72 is configured by the bending part (supporting part side bending part) 722. By setting it as such a structure, the stress concentration to the pillar part 72 is reduced and damage to the pillar part 72, the fracture | rupture of the connection part 91, etc. can be reduced. In particular, in this embodiment, since the planar view shape of the pillar portion 72 corresponds to the planar view shape of the connection portion 91, stress concentration on the connection portion 91 is further reduced, and the breakage of the connection portion 91 is more effective. Can be reduced. In addition, the planar view shape of the pillar portion 72 is not limited to a circle, and may be an ellipse or an oval shape, or may be a polygon with rounded corners, for example.

  On the other hand, as shown in FIG. 9B, the protruding portion 711 has two sides 711 a and 711 b and a curved portion (a support portion side) that connects the sides 711 a and 711 b on the distal end side of the protruding portion 711 in a plan view. The curved portion 711 ″ has a semicircular arc-shaped curved portion continuously connected to the side 711a and the side 711b. By setting it as such a structure, the stress concentration to the protrusion part 711 is reduced, and the damage of the protrusion part 711, the fracture | rupture of the connection part 92, etc. can be reduced. In particular, in this embodiment, since the planar view shape of the projecting portion 711 corresponds to the planar view shape of the connection portion 92, stress concentration on the connection portion 92 is further reduced, and the breakage of the connection portion 92 is more effective. Can be reduced. Note that the protrusions 712, 713, and 714 have the same configuration as the protrusion 711.

  Also according to the sixth embodiment, the same effects as those of the first embodiment described above can be exhibited.

<Seventh embodiment>
FIG. 10 is a sectional view showing a semiconductor device according to the seventh embodiment of the present invention. FIG. 11 is a plan view showing a pressure sensor element included in the semiconductor device shown in FIG. 12 is a diagram showing a bridge circuit including the pressure sensor element shown in FIG.

  Hereinafter, a semiconductor device according to a seventh embodiment of the present invention will be described. The description will focus on differences from the above-described embodiment, and the description of the same matters will be omitted.

  The semiconductor device of the seventh embodiment is the same as that of the first embodiment described above except that the configuration of the functional elements is different and the shape of the substrate is different. In addition, the same code | symbol is attached | subjected to the structure similar to embodiment mentioned above.

  As shown in FIG. 10, a diaphragm 215 that is thinner than the surrounding portion and bends and deforms by receiving pressure is provided in a portion overlapping the cavity 5 of the semiconductor substrate 21. The diaphragm 215 is formed by providing a bottomed recess 216 on the lower surface of the semiconductor substrate 21, and the lower surface serves as a pressure receiving surface 215a. When the pressure receiving surface 215a receives pressure, the diaphragm 215 bends according to the magnitude of the received pressure.

  As shown in FIG. 11, the pressure sensor element 8 as a functional element has four piezoresistive elements 81, 82, 83, 84 provided on a diaphragm 215. Further, the piezoresistive elements 81 to 84 are electrically connected to each other through a wiring or the like, and constitute a bridge circuit 80 (Wheatstone bridge circuit) shown in FIG. The bridge circuit 80 is connected to a drive circuit (not shown) that supplies a drive voltage AVDC. The bridge circuit 80 outputs a signal (voltage) corresponding to a change in resistance value of the piezoresistive elements 81 to 84 based on the deflection of the diaphragm 215. Based on the output signal, the semiconductor circuit 6 detects the pressure applied to the diaphragm 215.

  Each of the piezoresistive elements 81 to 84 is configured, for example, by doping (diffusing or injecting) an impurity such as phosphorus or boron into the semiconductor substrate 21. Further, the wiring connecting these piezoresistive elements 81 to 84 is constituted, for example, by doping (diffusing or injecting) impurities such as phosphorus and boron into the semiconductor substrate 21 at a higher concentration than the piezoresistive elements 81 to 84. Has been.

  The semiconductor circuit 6 includes, for example, a drive circuit for supplying a voltage to the bridge circuit 80, a temperature compensation circuit for temperature compensation of the output from the bridge circuit 80, and a pressure applied from the output from the temperature compensation circuit. The pressure detection circuit to be obtained, an output circuit for converting the output from the pressure detection circuit into a predetermined output format (CMOS, LV-PECL, LVDS, etc.) and the like are included.

  Also according to the seventh embodiment, the same effect as that of the first embodiment described above can be exhibited.

[Electronics]
Next, the electronic apparatus of the present invention will be described.

  FIG. 13 is a perspective view showing a configuration of a mobile (or notebook) personal computer including the semiconductor device of the present invention.

  In this figure, a personal computer 1100 includes a main body portion 1104 provided with a keyboard 1102 and a display unit 1106 provided with a display portion 1108. The display unit 1106 is rotated with respect to the main body portion 1104 via a hinge structure portion. It is supported movably. Such a personal computer 1100 incorporates, for example, a semiconductor device 1 used as an oscillator or a pressure sensor. Therefore, the personal computer 1100 can exhibit higher performance and higher reliability.

  FIG. 14 is a perspective view showing a configuration of a cellular phone (including PHS) including the semiconductor device of the present invention.

  In this figure, a cellular phone 1200 includes a plurality of operation buttons 1202, a earpiece 1204, and a mouthpiece 1206, and a display portion 1208 is disposed between the operation buttons 1202 and the earpiece 1204. Such a cellular phone 1200 incorporates a semiconductor device 1 used as an oscillator or a pressure sensor, for example. Therefore, the cellular phone 1200 can exhibit higher performance and higher reliability.

  FIG. 15 is a perspective view showing a configuration of a digital still camera including the semiconductor device of the present invention.

  In this figure, connection with an external device is also shown in a simplified manner. The digital still camera 1300 generates an imaging signal (image signal) by photoelectrically converting an optical image of a subject using an imaging element such as a CCD (Charge Coupled Device). A display unit 1310 is provided on the back of a case (body) 1302 in the digital still camera 1300, and is configured to display based on an imaging signal from the CCD. The display unit 1310 displays a subject as an electronic image. Functions as a viewfinder. A light receiving unit 1304 including an optical lens (imaging optical system), a CCD, and the like is provided on the front side (the back side in the drawing) of the case 1302.

  When the photographer confirms the subject image displayed on the display unit 1310 and presses the shutter button 1306, the CCD image pickup signal at that time is transferred and stored in the memory 1308. In the digital still camera 1300, a video signal output terminal 1312 and an input / output terminal 1314 for data communication are provided on the side surface of the case 1302. As shown in the figure, a television monitor 1330 is connected to the video signal output terminal 1312 and a personal computer 1340 is connected to the input / output terminal 1314 for data communication as necessary. Further, the imaging signal stored in the memory 1308 is output to the television monitor 1330 or the personal computer 1340 by a predetermined operation. Such a digital still camera 1300 incorporates, for example, a semiconductor device 1 used as an oscillator or a pressure sensor. Therefore, the digital still camera 1300 can exhibit higher performance and higher reliability.

  In addition to the personal computer (mobile personal computer) in FIG. 13, the mobile phone in FIG. 14, and the digital still camera in FIG. Inkjet printers), laptop personal computers, televisions, video cameras, video tape recorders, car navigation devices, pagers, electronic notebooks (including those with communication functions), electronic dictionaries, calculators, electronic game devices, word processors, workstations, televisions Telephone, crime prevention TV monitor, electronic binoculars, POS terminal, medical equipment (for example, electronic thermometer, blood pressure monitor, blood glucose meter, electrocardiogram measuring device, ultrasonic diagnostic device, electronic endoscope), fish detector, various measuring devices, instruments Type (e.g., vehicle, Sky machine, gauges of a ship), can be applied to a flight simulator or the like.

[Moving object]
Next, a moving body provided with the semiconductor device of the present invention will be described.
FIG. 16 is a perspective view showing a moving body including the semiconductor device of the present invention.

  A semiconductor device 1 is mounted on an automobile (mobile body) 1500. The semiconductor device 1 is, for example, keyless entry, immobilizer, car navigation system, car air conditioner, anti-lock brake system (ABS), air bag, tire pressure monitoring system (TPMS), engine control, hybrid The present invention can be widely applied to electronic control units (ECUs) such as battery monitors for automobiles and electric vehicles, and vehicle body attitude control systems. Thus, since the automobile 1500 includes the semiconductor device 1, it can exhibit higher performance and higher reliability.

  As described above, the semiconductor device, the electronic apparatus, and the moving body of the present invention have been described based on the illustrated embodiment. It can be replaced with that of the configuration. In addition, any other component may be added to the present invention. Moreover, you may combine each embodiment suitably.

  Moreover, although each embodiment mentioned above demonstrated the structure which formed the recessed part by forming the hollow in a board | substrate, as a formation method of a recessed part, it is not limited to this. For example, a recess may be formed by forming a recess in the lower surface (substrate side) of the lid without providing a recess in the substrate, and a frame-shaped structure is interposed between the substrate and the lid. Then, the recess may be formed by the inner peripheral surface of the frame-shaped structure and the upper surface of the substrate.

DESCRIPTION OF SYMBOLS 1 …… Semiconductor device 2 …… Base substrate 21 …… Semiconductor substrate 215 …… Diaphragm 215a …… Pressure receiving surface 216 …… Concavity 22 …… First insulating film 23 …… Second insulating film 24 …… Dimple 3 …… Vibration Element 31... Vibrating part electrode 311... Fixed part 312... Vibrating body 312 a... Base 312 b, 312 c, 312 d, 312 e ... Vibrating part 313 ... Supporting part 32. ... Cover 41 ... Cover layer 41a ... Communication hole 411 ... Insulating layer 412 ... Conductive layer 412a ... Contact part 42 ... Sealing layer 421 ... Contact part 43 ... Structure 431 ... Interlayer insulating film 432 …… Wiring layer 433 …… Interlayer insulating film 434 ′ …… External connection terminal 434 …… Wiring layer 435 …… Surface protective layer 5 …… Cavity 6 …… Semiconductor circuit 61 …… MOS transistor Transistor 7 ...... concave 71 ... wall 711,712,713,714 ... projection 711a, 711b, 711c, 711d ... side 711 '... bent 711 "... curved 72,72a, 72b, 72c , 72d …… Column portion 721 …… Bending portion 722 …… Bending portion 73 …… Reinforcing portion 8 …… Pressure sensor element 80 …… Bridge circuit 81, 82, 83, 84 …… Piezoresistive element 91 …… Connection portion 911 , 912, 913, 914... Side 915... Bent portion 915 a... Straight line portion 916... Curved portion 916 a ... curved portion 92. …… Linear part 926 …… Curved part 926a …… Curve part 1100 …… Personal computer 1102 …… Keyboard 1104 …… Body part 1106 …… Display unit 1108... Display unit 1200... Mobile phone 1202 .. Operation button 1204 .. Earpiece 1206 .. Mouthpiece 1208 .. Display unit 1300 .. Digital still camera 1302 .. Case 1304. ... Shutter button 1308 ... Memory 1310 ... Display section 1312 ... Video signal output terminal 1314 ... Input / output terminal 1330 ... TV monitor 1340 ... Personal computer 1500 ... Automobile AVDC ... Drive voltage θ11, θ12, θ21, θ22 …… Angle

Claims (9)

A substrate,
A recess disposed on the substrate and having an opening opening in a normal direction of the substrate;
A lid that covers the opening of the recess;
A lump disposed in the recess and connected to the lid;
A functional element disposed at the bottom of the recess ,
In the plan view of the substrate, the outline of the connection portion between the lump portion and the lid portion includes at least one of a bent portion bent at an obtuse angle and a curved portion bent .
The said lump part serves as at least one part of the wiring electrically connected with the said functional element, The semiconductor device characterized by the above-mentioned.   The semiconductor device according to claim 1, wherein the lump has a pillar portion that is spaced apart from a side wall of the recess.   The semiconductor device according to claim 1, wherein the lump has a protruding portion that protrudes from a side wall of the recessed portion toward the inside of the recessed portion.   4. Any one of claims 1 to 3, wherein the outer shape of the lump portion has at least one of a lump portion side bent portion and a bent lump portion side bent portion bent at an obtuse angle in a plan view of the substrate. 2. A semiconductor device according to claim 1.   The semiconductor device according to claim 1, wherein an internal space between the concave portion and the lid portion is sealed. The functional element is a semiconductor device according to any one of claims 1 to 5 is a vibrating element. The functional element is a semiconductor device according to any one of claims 1 to 5 which is a pressure sensor element. An electronic apparatus characterized by having a semiconductor device according to any one of claims 1 to 7. Mobile, characterized in that it has a semiconductor device according to any one of claims 1 to 7.

Images