JP6421501B2 - Light source device and projector provided with the light source device - Google Patents

Description

  Embodiments described herein relate generally to a light source device and a projector including the light source device.

  2. Description of the Related Art In recent years, time division projectors that take out light of a plurality of wavelengths in a time division manner and form and project an image by sequentially modulating the extracted light of the plurality of wavelengths have become widespread. As a light source device used for such a time-division projector, for example, a light source that outputs white light and a rotating wheel to which a plurality of color filters are attached are used to convert white light emitted from the light source at a constant speed. The light is made incident on a rotating wheel that rotates in order to extract light of a plurality of wavelengths (for example, blue, green, and red light) in a time-sharing manner. A light source that takes out light of a plurality of wavelengths in a time-sharing manner by using a rotating wheel having a phosphor layer instead of a color filter and allowing light of a single wavelength emitted from a light source such as a semiconductor laser to enter the rotating wheel. Devices have also been proposed.

  Some of such light source devices include a laser light source unit that emits light in a plurality of wavelength bands (red and blue) as disclosed in, for example, Patent Document 1. In this laser light source unit, 16 blue and red semiconductor lasers (32 in total) are arranged in 4 rows and 8 columns, and in this arrangement, the blue semiconductor laser and the red semiconductor laser are arranged in a checkered pattern. . That is, a plurality of two types of semiconductor lasers that emit light of different wavelength bands are arranged in a plane.

  In general, the amount of heat generated by a semiconductor laser varies depending on the wavelength band of emitted light. For example, in the case of the blue and red semiconductor lasers described above, the amount of heat generated by the blue semiconductor laser is larger than that by the red semiconductor laser. . In addition, semiconductor lasers have a temperature dependency on power-to-light conversion efficiency (power-light conversion efficiency), and it is also known that power-light conversion efficiency decreases as the temperature of the semiconductor laser increases. Yes.

JP 2012-123967 A

  The problem according to the embodiment of the present invention is that, in a light source device composed of a plurality of types of semiconductor lasers having different calorific values, the influence of heat generated in one semiconductor laser can hardly be exerted on the other semiconductor laser. An object is to provide a light source device and a projector including the light source device.

In order to solve the above problems, in one embodiment of the light source device according to the present invention,
A first plate for holding a first semiconductor laser device composed of a plurality of semiconductor lasers;
A second plate configured by a plurality of semiconductor lasers and holding a second semiconductor laser device that is different in operating heat generation from the first semiconductor laser device;
An integrated radiator in which the first plate and the second plate are arranged so that the emission directions of the light emitted from the first and second semiconductor laser devices are parallel to each other;
The radiator is fixed to the base member.

  As described above, according to the light source device according to the embodiment of the present invention and the projector including the light source device, the influence of the heat generated in one semiconductor laser can hardly be exerted on the other semiconductor laser.

It is a schematic diagram which shows embodiment of the light source device which concerns on this invention. It is a schematic diagram which shows the structure of the light source with which the light source device of embodiment of this invention is provided. It is a schematic diagram which shows the structure of the rotating wheel with which the light source device of embodiment of this invention is provided. It is a schematic diagram which shows the other structure of the light source with which the light source device of embodiment of this invention is provided. It is a schematic diagram which shows the other structure of the light source with which the light source device of embodiment of this invention is provided. It is a schematic diagram showing one embodiment of a projector according to the present invention.

  A light source device according to an embodiment of the present invention and a projector including the light source device will be described in detail with reference to FIGS. As shown in FIG. 1, the light source device 1 of the present embodiment includes a light source 10, a collimating lens 20, a condenser lens 21, a rotating wheel 30 that is a transmission member, a motor 40, and a light receiving lens 50 that is an optical member. Has been.

  The light source 10 includes a plurality of blue semiconductor lasers 11B and a plurality of red semiconductor lasers 11R, and the blue semiconductor laser 11B and the red semiconductor laser 11R advance the emitted light in the corresponding plate-shaped plates 12B and 12R, respectively. The direction is perpendicular to the exit surface of the plate, and the light emitted from each other is held in parallel. FIG. 2 is an external view showing a more specific configuration of the light source 10. In this figure, twelve blue semiconductor lasers 11B are held on a plate 12B, and seventeen red semiconductor lasers 11R are held on a plate 12R. In the plate 12B, three semiconductor laser rows Br1 each including four blue semiconductor lasers 11B are arranged on a plane from which the light of the blue semiconductor laser 11B is emitted (hereinafter also referred to as an “emission surface”). ing. In other words, twelve blue semiconductor lasers 11B are arranged in a matrix of 4 rows and 3 columns on the emission surface of the plate 12B.

  On the other hand, three rows of semiconductor laser rows Rr1 composed of four red semiconductor lasers 11R are arranged on the emission surface of the plate 12R, and one semiconductor laser row Rr2 composed of five red semiconductor lasers 11R is one. Arranged in columns. As shown in FIG. 2A, the semiconductor laser array Rr2 is arranged on the side closest to the plate 12B. That is, in the plate 12R, the number of semiconductor lasers 11R constituting the semiconductor laser array Rr2 closest to the plate 12B is larger than the number of semiconductor lasers 11R constituting the semiconductor laser array Rr1.

  Here, the emitted light of the blue semiconductor laser 11B is light having a peak at a specific wavelength in a wavelength band of, for example, 420 to 500 nanometers, and the emitted light of the red semiconductor laser 11R is, for example, 550 to 780 nanometers. In this wavelength band, the light has a peak at a specific wavelength. The amount of heat generated by the twelve blue semiconductor lasers 11B held on the plate 12B is larger than the amount of heat generated by the seventeen red semiconductor lasers 11R held on the plate 12R. The collimating lens 20 shown in FIG. 1 may be attached to the emission surfaces of the plates 12B and 12R corresponding to the semiconductor lasers 11B and 11R shown in FIG.

  The surface of the plates 12B and 12R on the opposite side to the light exit surface is a mounting surface to the radiator 13. The radiator 13 radiates heat generated by the semiconductor lasers held by the plates 12B and 12R, and includes a base portion 13a and fins made up of a plurality of flat members protruding from the surface of the base portion 13a. 13b. Note that a material that can be extruded (for example, aluminum) may be adopted as the material of the radiator 13, and the fins 13b may be formed by extrusion. In the base portion 13a, fins 13b are formed on the surface opposite to the arrangement surface (the hatched portion shown in FIG. 2A) to which the mounting surfaces of the plates 12B and 12R are fixed, that is, the surface different from the arrangement surface. Has been. Thus, as described above, the semiconductor lasers 11B and 11R are held so that the traveling direction of the emitted light is perpendicular to the emitting surface of the plate, and thus the emitting directions of the light emitted from each of them are parallel to each other. It becomes.

  The light source 10 having the above-described configuration is attached by fixing the radiator 13 at a target attachment position. For example, FIG. 2A illustrates the case where the light source 10 is attached to the base member 14, and the side surface (on the long side) of the base portion 13 a is fixed to the base member 14. At this time, the plates 12B and 12R are in a floating state without contacting the base member 14. In FIG. 2A, the shape of the base member 14 is illustrated as a long flat plate, but the shape is not limited to a flat plate. For example, the base member may be a part of a housing of a device (for example, a projector) that incorporates the light source 10.

  Returning to FIG. 1, the condensing lens 21 condenses the emitted light from the light source 10 and condenses the rotating wheel 30 so as to have a predetermined spot diameter. The rotating wheel 30 is a transparent disk-shaped member that transmits light, and rotates about a rotation axis. The center is fixed to the drive shaft 40 a of the motor 40. Here, if the material of the rotating wheel 30 is a material having high light transmittance, glass, transparent ceramics, resin, a crystal substrate such as sapphire or gallium nitride, or the like can be used. FIG. 3 shows the appearance of the rotating wheel 30.

  FIG. 3A shows a surface on which light from the light source 10 is incident on the rotating wheel 30 (a surface viewed from the direction indicated by arrow A in FIG. 1; hereinafter, also referred to as “incident surface” or “surface”). FIG. 3B shows a surface from which the fluorescence is emitted from the rotating wheel 30 (a surface opposite to the incident surface; hereinafter, also referred to as “exit surface” or “back surface”). In addition, a spot SP indicated by a broken-line circle in FIG. 3A indicates a region irradiated with incident light from the light source 10 collected by the condenser lens 21. Further, a fluorescent region FL indicated by a broken-line circle in FIG. 3B indicates a region where a phosphor layer described later emits light by incident light from the light source 10.

  As shown in FIG. 3, the rotating wheel 30 is provided with a ring-shaped transmission region (see FIG. 3A) having a width W <b> 1 from the outer peripheral edge on the incident surface. This transmission region is divided into three equal parts in the circumferential direction, and three transmission regions TR1, TR2 and TR3 are provided on the same circumference. Note that the angle ranges of the transmission regions TR1 to TR3 are not limited to three equal parts, and can be set as needed.

  As shown in FIG. 3A, arc-shaped dielectric films 31 each having a width W1 are formed on the incident surface side of the transmission regions TR2 and TR3, whereby the light emitted from the light source 10 is formed. Among them, the wavelength band of the light emitted from the blue semiconductor laser 11B is transmitted, and the light of the other wavelength band is reflected. As the dielectric film 31, a dichroic filter can be used. Although the dielectric film 31 can be omitted as appropriate, when the spot film SP is omitted, the red semiconductor laser 11R is not driven to emit red light while the spot SP is located in the transmission regions TR2 and TR3. It is good to do so. On the other hand, since the dielectric film 31 is not formed on the incident surface side of the transmission region TR1, light in a specific wavelength band is not attenuated and light in the entire wavelength band is transmitted.

Next, as shown in FIG. 3B, an arcuate phosphor layer 32R having a width W2 narrower than the width W1 of the transmission region is formed on the emission surface side of the transmission region TR1. The phosphor layer 32R is excited by light emitted from the blue semiconductor laser 11B of the light source 10, and generates fluorescence in a wavelength band different from the wavelength band of the light emitted from the blue semiconductor laser 11B. The fluorescence emitted from the phosphor layer 32R generates fluorescence (red light) in a wavelength band of, for example, 550 to 780 nanometers. Specific examples of the material of the phosphor layer 32R include YAG, (Sr, Ca) AlSiN ₃ : Eu, CaAlSiN ₃ : Eu, SrAlSiN ₃ : Eu, and K ₂ SiF ₆ : Mn.

Further, an arc-shaped phosphor layer 32G having a width W2 is formed on the emission surface side of the transmission region TR2, and the wavelength band of the light emitted from the blue semiconductor laser 11B is similar to the phosphor layer 32R. Generate fluorescence in different wavelength bands. For example, fluorescence (green light) having a wavelength band of, for example, 500 to 650 nanometers is generated by light emitted from the blue semiconductor laser 11B. As an example of a specific material of the phosphor layer 32G, an oxide-based phosphor such as β-SiAlON: Eu, Lu ₃ Al ₅ O ₁₂ can be given. Thus, both the phosphor layers 32R and 32G have a wavelength band (first wavelength band) including the peak wavelength of the light emitted from the light source 10, more specifically, the blue semiconductor laser 11B, as the first. Wavelength conversion to light in a wavelength band different from the wavelength band of the light, that is, light in another wavelength band (second wavelength band). Here, the first wavelength band and the second wavelength band may be partially overlapped, and the second wavelength band (the wavelength band of the fluorescence generated by the phosphor layer). Inside, light of a predetermined peak wavelength may be included.

  In addition, since the phosphor layer is not formed on the emission surface side of the transmission region TR3, light in the entire wavelength band is transmitted. That is, the light from the light source 10 that has passed through the rotating wheel 30 is emitted as it is. However, speckle noise may be reduced by forming a scattering surface in the transmission region TR3 and dynamically diffusing the blue light emitted from the light source 10 by the rotation of the rotating wheel 30.

  Returning to FIG. 1, the motor 40 is a brushless DC motor, and is fixed so that the drive shaft 40 a is orthogonal to the surface of the rotating wheel 30. The motor 40 rotates in the direction indicated by the arrow B in FIG. 3 at a rotation speed based on the frame rate of the moving image to be reproduced (the number of frames per second. The unit is [fps]). For example, when a moving image of 60 [fps] can be reproduced, the rotation speed of the rotating wheel 30 may be set to an integral multiple of 60 rotations per second. The light receiving lens 50 is an optical member that condenses light emitted from the phosphor layers 32R and 32G. That is, the fluorescence generated in the phosphor layers 32R and 32G is condensed by the light emitted from the light source 10 and emitted as emitted light from the light source device 1.

  In the light source device 1 configured as described above, specifically, the light of the blue semiconductor lasers 11 </ b> B and 11 </ b> R emitted from the light source 10 is collected by the condenser lens 21 and irradiated onto the rotating wheel 30. The rotating wheel 30 is rotated in the direction of arrow B in FIG. 3 by the motor 40, and when the spot SP condensed by the condenser lens 21 is located on the transmission region TR1, the blue semiconductor laser 11B The blue light and the red light of the red semiconductor laser 11R pass through the rotating wheel 30 and enter the phosphor layer 32R. Thereby, red light is generated in the phosphor layer 32 </ b> R and emitted to the light receiving lens 50. The red light collected by the light receiving lens 50 is emitted to the outside as light from the light source device 1.

  Next, when the spot SP is located on the transmission region TR2, only the blue light of the blue semiconductor laser 11B passes through the dielectric film 31 and enters the phosphor layer 32G. Thereby, green light is generated in the phosphor layer 32 </ b> G and emitted to the light receiving lens 50. Further, the green light generated in the phosphor layer 32G is also emitted to the incident surface side of the rotating wheel 30, but this green light is reflected by the dielectric film 31 and emitted to the light receiving lens 50 side. Become.

  Even when the spot SP is positioned on the transmission region TR3, only the blue light of the blue semiconductor laser 11B is transmitted through the dielectric film 31, but a phosphor layer is formed on the emission surface side of the transmission region TR3. Therefore, the wavelength band of the blue light incident on the rotating wheel 30 is emitted to the light receiving lens 50 without being converted, and is emitted to the outside as light of the light source device 1 while maintaining the wavelength band. In this manner, the light source device 1 repeatedly emits red, green, and blue light in order according to the rotation of the rotary wheel 30.

(Heat generation situation in the light source 10 of the present embodiment)
Next, with reference to FIG. 2B, the temperature distribution of the heat generated during the driving of the light source 10 will be described. The temperature distribution shown in FIG. 2B shows a state when the light source 10 is driven for 1 hour in an environment with a constant ambient temperature. Further, the area (a) is a temperature range of 29.8 to 36.2 degrees, the area (a) is a temperature range of 36.2 to 42.6 degrees, and the area (c) is 42.6 to 49.49 degrees. It shows that it is in the temperature range of 1 degree. As shown in this figure, due to the heat generated by the blue semiconductor laser 11B, the temperature of the plate 12B is the highest among the members constituting the light source 10, and the temperature is in the range of 42.6 to 49.1 ° C. Further, the heat generated by the blue semiconductor laser 11B propagates to the plate 12R via the radiator 13, and the temperature of the plate 12R is higher than when the red semiconductor laser 11R is driven alone, specifically 36.2. It is raised to a range of ˜42.6 ° C.

  However, in the light source 10 of this embodiment, since the heat radiator 13 is fixed to the base member 14, for example, compared with the case where the plates 12B and 12R are directly fixed to the base member 14, the plate 12B to the plate 12R. The propagation of heat to the can be slowed. For this reason, the red semiconductor laser 11R can be hardly affected by the heat generated in the blue semiconductor laser 11B.

(Other embodiment 1 regarding the structure of the light source 10)
Next, a light source having a configuration different from that of the light source 10 shown in FIG. 2 will be described with reference to FIG. 4, the same components as those shown in FIG. 2 are denoted by the same reference numerals, and detailed description thereof is omitted. The light source 10 ′ shown in FIG. 4 is different from the light source 10 shown in FIG. 2 in that the radiator is individually attached to the plates 12B and 12R. That is, as shown to Fig.4 (a), the radiator 13B and 13R are prepared separately, the plate 12B is arrange | positioned with respect to the radiator 13B, and the plate 12R is arrange | positioned with respect to the radiator 13R, respectively. Here, the radiator 13B in which the plate 12B is arranged and the radiator 13R in which the plate 12R is arranged are individually fixed to the base member 14, but at this time, from each of the blue semiconductor laser 11B and the red semiconductor laser 11R, It is fixed to the base member 14 so that the emitted lights are parallel to each other.

  FIG. 4B shows the temperature distribution of the light source 10 'during driving. The temperature distribution measurement conditions shown in FIG. 4B are the same as the temperature distribution measurement conditions shown in FIG. Further, the area (a) is a temperature range of 27.6 to 35.0 degrees, the area (a) is a temperature range of 35.0 to 42.4 degrees, and the area (c) is 42.4 to 49.49. It shows that the temperature range of 7 degrees and the area (d) are in the temperature range of 49.7 to 57.1 degrees. As shown in FIG. 4B, the plates 12B and 12R are not arranged in the single radiator 13 as in the light source 10 shown in FIG. 2, but are arranged in the individual radiators 13B and 13R, respectively. As a result, the heat of the blue semiconductor laser 11B can be prevented from propagating to the red semiconductor laser 11R through the radiator. That is, while the temperature of the plate 12B is in the range of 49.7 to 57.1 ° C, most of the plate 12R is within the temperature range of 27.6 to 35.0 ° C.

  However, the heat generated by the blue semiconductor laser 11B raises the temperature of some of the red semiconductor lasers 11R via the base member 14. That is, in FIG.4 (b), the lower left part (part near plate 12B and the base member 14) of the output surface of plate 12R rises to the temperature range of 42.4-49.7 degreeC, In the red semiconductor laser array closest to the plate 12B, the lowermost red semiconductor laser 11R (closest to the base member 14) rises to a temperature range of 35.0 to 42.4 ° C. However, it is clear that the influence of heat generation in the blue semiconductor laser 11B on the red semiconductor laser 11R is significantly reduced as compared with the light source 10 shown in FIG.

  In the light source 10 ′ shown in FIG. 4, the fins 13b of the radiators 13B and 13R are both formed by extrusion molding, similarly to the radiator 13 shown in FIG. ), The length in the direction of arrow C is the same. However, the lengths of the fins 13b of the radiators 13B and 13R in the direction of the arrow C may be varied according to the amount of heat generated by the blue semiconductor laser 11B and the red semiconductor laser 11R. More specifically, the length in the direction of arrow C of the fin 13b of the radiator 13B in which the blue semiconductor laser 11B having a larger amount of heat generation than the red semiconductor laser 11R is arranged is longer than the length of the fin 13b of the radiator 13R. It may be longer.

(Other embodiment 2 regarding the structure of the light source 10)
Next, a light source having a configuration different from that of the light sources 10 and 10 ′ shown in FIGS. 2 and 4 will be described with reference to FIG. In FIG. 5, the same components as those shown in FIGS. 2 and 4 are denoted by the same reference numerals, and detailed description thereof is omitted. The light source 10 ″ shown in FIG. 5 is different from the light source 10 ′ shown in FIG. 4 in that the heat radiators 13B and 13R are not directly fixed to the base member 14, but the heat insulating member 15 (shown in FIG. 5A). It is a point fixed to the base member 14 via a partially enlarged view).

  The temperature distribution during driving of the light source 10 ″ shown in FIG. 5A is shown in FIG. 5B. The measurement conditions of the temperature distribution shown in FIG. 5B are shown in FIG. 2B and FIG. The measurement conditions of the temperature distribution shown in b) are the same, the area (a) is in the temperature range of 27.1 to 34.4 degrees, and the area (a) is in the range of 34.4 to 41.7 degrees. This shows that the temperature range, (c) is in the temperature range of 41.7 to 49.0 degrees, and (d) is in the range of 49.0 to 56.3 degrees C. FIG. ), By fixing the heat radiators 13B and 13R to the base member 14 via the heat insulating member 15, the red semiconductor laser 11R is more hardly affected by the heat generated in the blue semiconductor laser 11B. That is, in the light source 10 ′ shown in FIG. The temperature of a part of the body laser 11R was increased by the heat generated by the blue semiconductor laser 11B. However, in the light source 10 ″ shown in FIG. In the range of 27.1 to 34.4 ° C.

  In the light source 10 ″ shown in FIG. 5, the heat insulating member 15 may be a specific material such as a plastic material such as PC (polycarbonate), PP (polypropylene), or PS (polystyrene). The heat insulating member 15 may be one member whose length extends from the radiators 13B to 13R (that is, including the gap between the radiators 13B and 13R), and corresponds to each of the radiators 13B and 13R. It may be divided into two heat insulating members, and if necessary, only the radiator 13B may be fixed to the base member 14 via the heat insulating member, or only the heat radiator 13R may be fixed to the base member 14 via the heat insulating member. Further, when the radiator 13 shown in Fig. 2 is fixed to the base member 14, a heat insulating member 15 may be interposed.

Further, in the light source 10 ″ shown in FIG. 5 as well as the light source 10 ′ shown in FIG. 4, the fins 13b of the radiators 13B and 13R have different amounts of heat generated by the blue semiconductor laser 11B and the red semiconductor laser 11R. The length in the direction of the arrow C may be varied, more specifically, the heat generation amount of the fin 13b of the radiator 13B in which the blue semiconductor laser 11B having a larger calorific value than that of the red semiconductor laser 11R is disposed. You may make length longer than the length of the fin 13b of the heat radiator 13R.
As described above, the embodiments described so far are common in that the first plate (plate 12B) and the second plate (plate 12R) are not directly fixed to the base member. The effect of heat generated in one of the semiconductor lasers can be made difficult to affect the other semiconductor laser.

(Application example of light source device 1)
Next, a schematic configuration when the light source device 1 shown in FIG. 1 is used as a light source device in a so-called one-chip DLP (Digital Light Processing) projector will be described with reference to FIG. In FIG. 6, the same components as those shown in FIG. 1 are denoted by the same reference numerals, and detailed description thereof is omitted. The light source 10 used in the light source device 1 shown in FIG. 6 may be any of the light source 10, the light source 10 ′, and the light source 10 ″ shown in FIGS.

  In the projector 100 shown in FIG. 6, the light emitted from the light source device 1 is reflected by a DMD (Digital Micromirror Device) element 110 that is a light modulation unit, is condensed by a lens 120 that is a projection unit, and is collected on a screen S. Projected. The DMD element 110 is an array of fine mirrors corresponding to each pixel of the image projected on the screen S, and the light emitted to the screen S by changing the angle of each mirror is expressed in units of microseconds. Can be turned on / off. Here, when the angle of the mirror is such that the light emitted from the light source device 1 is reflected to the lens 120, the mirror is turned on, and when the mirror is not reflected to the lens 120, the mirror is turned off.

  Further, the gradation based on the image data of the image to be projected is changed by changing the gradation of the light incident on the lens 120 according to the ratio of the time during which each mirror of the DMD element 110 is turned on to the time when the mirror is turned off. Display is possible. Thereby, a color image (including a moving image) is projected onto the screen S by performing gradation control on each of red light, green light, and blue light sequentially emitted from the light source device 1 by using individual mirrors. be able to. The lens 120 is mainly composed of a projection lens, and projects an image formed by the DMD element 110 onto the screen S after being enlarged to a predetermined size.

  In the present embodiment, the DMD element is used as the light modulation means. However, the present invention is not limited to this, and any other light modulation element can be used depending on the application. The light source device according to the present invention and the projector using the light source device are not limited to the above-described embodiments, and various other embodiments are included in the present invention.

DESCRIPTION OF SYMBOLS 1 Light source device 10, 10 ', 10 "Light source 11B Blue semiconductor laser 11R Red semiconductor laser 12B, 12R Plate 13, 13B, 13R Radiator 13a Base part 13b Fin 14 Base member 15 Heat insulation member 20 Collimating lens 21 Condensing lens 30 Rotating wheel 31 Dielectric films 32R, 32G Phosphor layer 40 Motor 40a Drive shaft 50 Light receiving lens 100 Projector 110 DMD element (light modulation means)
120 lens (projection means)

Claims (10)

A first plate for holding a first semiconductor laser device composed of a plurality of semiconductor lasers;
A second plate configured by a plurality of semiconductor lasers and holding a second semiconductor laser device that is different in operating heat generation from the first semiconductor laser device;
A light source comprising: an integrated radiator in which the first plate and the second plate are arranged so that the emission directions of the light emitted from the first and second semiconductor laser devices are parallel to each other; And
A light source on which the radiator is fixed to a base member;
A condensing lens having an optical axis located between the first plate and the second plate, and condensing the emitted light from the light source device;
With
The plurality of semiconductor lasers constituting the first and second semiconductor laser devices are configured such that a plurality of semiconductor laser rows each including a plurality of semiconductor lasers arranged in a straight line are arranged on the corresponding plates.
In the second plate,
A light source device in which the number of semiconductor lasers constituting the semiconductor laser array closest to the first plate is larger than the number of semiconductor lasers constituting another semiconductor laser array.   The light source device according to claim 1, wherein a heat insulating member is provided between the radiator and the base member. A first plate for holding a first semiconductor laser device composed of a plurality of semiconductor lasers;
A second plate configured by a plurality of semiconductor lasers and holding a second semiconductor laser device that is different in operating heat generation from the first semiconductor laser device;
A first radiator in which the first plate is disposed;
A second heat radiator on which the second plate is disposed, and a light source comprising:
A light source in which the first radiator and the second radiator are fixed to a base member so that the emission directions of the light emitted from the first and second semiconductor laser devices are parallel to each other;
A condensing lens having an optical axis located between the first plate and the second plate, and condensing the emitted light from the light source device;
With
The plurality of semiconductor lasers constituting the first and second semiconductor laser devices are configured such that a plurality of semiconductor laser rows each including a plurality of semiconductor lasers arranged in a straight line are arranged on the corresponding plates.
In the second plate,
A light source device in which the number of semiconductor lasers constituting the semiconductor laser array closest to the first plate is larger than the number of semiconductor lasers constituting another semiconductor laser array.   The light source device according to claim 3, wherein a heat insulating member is provided between the first heat radiator and the base member.   The light source device according to claim 3, wherein a heat insulating member is provided between the second radiator and the base member.   6. The light source device according to claim 1, wherein the radiator has a heat radiating fin on a surface different from an arrangement surface of the plate.   The light source device according to any one of claims 3 to 6, wherein the fin of the first radiator and the fin of the second radiator have different lengths in one direction.   The calorific value of the first semiconductor laser device is larger than the calorific value of the second semiconductor laser device, and the fin of the first radiator is larger than the fin of the second radiator. The light source device according to claim 3, wherein the length in the one direction is long. In the first plate,
9. The number of semiconductor lasers constituting the semiconductor laser array closest to the second plate is the same as the number of semiconductor lasers constituting another semiconductor laser array. The light source device described. The light source device according to any one of claims 1 to 9,
A light modulation unit that sequentially modulates light of a plurality of wavelength bands emitted from the light source device to form an image based on image data;
A projection means for enlarging and projecting the image;

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