JP6380887B2 - Substrate processing apparatus and substrate processing method - Google Patents

Description

  The present invention includes, for example, a semiconductor wafer, a glass substrate for a liquid crystal display device, a plasma display substrate, a FED (Field Emission Display) substrate, an optical disk substrate, a magnetic disk substrate, a magneto-optical disk substrate, a photomask substrate, The present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate such as a ceramic substrate or a solar cell substrate.

In the manufacturing process of a semiconductor device, a processing liquid is supplied to the surface of a substrate such as a semiconductor wafer, and the surface of the substrate is processed using the processing liquid.
For example, a single-wafer type substrate processing apparatus that processes substrates one by one holds a substrate on a substantially horizontal surface while rotating the substrate, and a processing liquid on the surface of the substrate rotated by the spin chuck. And a nozzle for supplying. For example, the chemical liquid is supplied to the substrate held by the spin chuck, and then the rinse liquid is supplied, whereby the chemical liquid on the substrate is replaced with the rinse liquid. Thereafter, a spin drying process for removing the rinse liquid on the substrate is performed. In the spin drying process, when the substrate is rotated at a high speed, the rinse liquid adhering to the substrate is shaken off and removed (dried). In such a spin drying process, the rinsing liquid that has entered the gaps between the fine patterns on the surface of the substrate cannot be sufficiently removed, and as a result, drying failure may occur.

  For this reason, as shown in Patent Document 1 below, a normal temperature organic solvent such as isopropyl alcohol (IPA) liquid is supplied to the surface of the substrate after the rinsing process, and the rinse that has entered the pattern gap on the surface of the substrate. A technique for replacing the liquid with an organic solvent and drying the surface of the substrate has been proposed.

JP-A-9-38595

  The inventor of the present application supplies an organic solvent to the upper surface (surface) of the substrate after the rinsing process, and raises the liquid film of the organic solvent on the upper surface of the substrate from the upper surface by heating the substrate from below, After this liquid film was floated for a certain period of time, by applying a force toward the side of the substrate to the liquid film, the organic solvent liquid film was removed from above the substrate, and a method for drying the top surface of the substrate was examined. doing.

  As will be described later, the present inventor has found that it is necessary to detect the state of the organic solvent heated on the substrate when the present method is executed. That is, when the organic solvent liquid is heated on the upper surface of the substrate, it is detected whether the organic solvent liquid film is floating above the substrate, or after the organic solvent liquid film is removed, the organic solvent liquid droplets are formed on the substrate. It was found that there was a need to detect whether or not it remained on the surface.

  SUMMARY OF THE INVENTION An object of the present invention is to provide a substrate processing apparatus and a substrate processing method that can satisfactorily detect the state of an organic solvent heated on a substrate, and thereby can dry the upper surface of the substrate satisfactorily. It is.

In order to achieve the above object, the invention according to claim 1 is characterized in that an organic solvent supply means for supplying an organic solvent having a surface tension lower than water to the upper surface of a horizontally held substrate, and the temperature of the substrate is increased. Substrate heating means for heating the organic solvent on the upper surface of the substrate, organic solvent removing means for removing the organic solvent from the upper surface of the substrate, and the organic solvent on the upper surface of the substrate. A substrate processing apparatus comprising: an in- plane situation detecting unit that detects an in- plane situation; and a control unit that executes predetermined control based on the in- plane situation of the organic solvent detected by the in- plane situation detecting unit . provide.

Invention according to claim 2, wherein the plane condition detecting means, in parallel with the heating of the substrate by the substrate heating unit, detects the in-plane state of the organic solvent in said top surface of said substrate, said control predetermined unit, based on a signal from the plane condition detecting means, if the form of the organic solvent liquid film of said top surface of said substrate is determined whether an abnormality, it is determined that the abnormal The substrate processing apparatus according to claim 1, wherein the error processing is performed.
According to this configuration, the control unit can appropriately determine whether or not the liquid film form of the organic solvent on the upper surface of the substrate is abnormal, and the liquid film form is abnormal. If it is determined, predetermined error processing can be performed.
The invention according to claim 3 is characterized in that the in-plane condition detecting unit detects the in-plane condition of the organic solvent on the upper surface of the substrate in parallel with the heating of the organic solvent by the substrate heating unit, 3. The substrate processing apparatus according to claim 1, wherein when the control unit determines that a crack has occurred in the liquid film of the organic solvent, the control unit performs control to stop heating of the organic solvent by the substrate heating unit. is there.
According to this configuration, the heating of the organic solvent by the substrate heating unit can be stopped at an appropriate timing.
In the invention according to claim 4, the in-plane condition detecting means detects the in-plane condition of the organic solvent on the upper surface of the substrate in parallel with the removal of the organic solvent by the organic solvent removing means, A predetermined error process is performed when the control unit determines that there is a remaining droplet of the organic solvent on the upper surface of the substrate based on a signal from the in-plane state detection unit. It is a substrate processing apparatus as described in any one of these.
According to this configuration, the control unit can appropriately determine the remaining amount of the organic solvent droplets on the upper surface of the substrate, and can perform predetermined error processing when it is determined that there are remaining droplets. .

According to a fifth aspect of the present invention, there is provided an organic solvent supply means for supplying an organic solvent having a surface tension lower than that of water to an upper surface of a horizontally held substrate; a substrate heating means for heating at the top surface of the substrate, and an organic solvent removing means for eliminating the organic solvent from the top surface of the substrate, of the organic solvent liquid film is formed to cover the upper surface of the substrate Based on the liquid level height of the liquid level of the liquid film of the organic solvent detected by the liquid level height detecting means, the liquid level height detecting means for detecting the liquid level height, and the organic solvent And a control means for controlling any one of the exclusion means.
According to a sixth aspect of the present invention, the liquid level height of the liquid film of the organic solvent reaches a predetermined height position based on a signal from the liquid level height detecting unit. It is a substrate processing apparatus of Claim 5 which judges whether it exists.

According to these configurations, the liquid level of the organic solvent liquid film on the upper surface of the substrate is detected by the liquid level detecting means. Thus, the control means can cause at least one of the organic solvent supply means and the organic solvent exclusion means to perform processing according to the state of the organic solvent on the upper surface of the substrate. A substrate processing apparatus capable of satisfactorily drying the upper surface of the substrate can be provided.
Further, the control means can determine the liquid level height of the organic solvent liquid film formed on the substrate based on a signal from the liquid level detection means. Therefore, the state of the organic solvent liquid film formed on the substrate can be detected well. Thus, the control means, a process according to the state of the organic solvent of the upper surface of the substrate, it is possible to execute at least one of the organic solvent supply hand stage Contact and organic solvent removing means, therefore, an organic solvent Thus, it is possible to provide a substrate processing apparatus capable of satisfactorily drying the upper surface of the substrate.

The invention according to claim 7, wherein the liquid surface height detection means, wherein an organic solvent supply means in parallel with the supply of organic solvent, detects the liquid level of the organic solvent in said top surface of said substrate and said control means, said the liquid level of the liquid film of the organic solvent is determined to reach a predetermined height position to stop the supply of the organic solvent by the organic solvent supply unit, according to claim 5 Alternatively, the substrate processing apparatus according to 6 .

According to this configuration, the supply of the organic solvent to the upper surface of the substrate by the organic solvent supply unit can be stopped at an appropriate timing .

According to an eighth aspect of the present invention, an organic solvent supplying step of supplying an organic solvent having a surface tension lower than water to the upper surface of a horizontally held substrate, and heating the substrate to raise the organic solvent. a substrate heating process of heating the upper surface of the substrate, and an organic solvent elimination step of eliminating the organic solvent from the top surface of the substrate, in the upper surface of the front Stories substrate, to detect the in-plane state of the organic solvent Provided is a substrate processing method including an in- plane condition detecting step and a step of performing a predetermined operation based on the detected in-plane condition of the organic solvent .

According to this method, the same effects as the effects described in relation to the invention according to the first aspect can be obtained.
The invention according to claim 9 includes the step of detecting the in-plane situation of the organic solvent on the upper surface of the substrate in parallel with the substrate heating step. The substrate processing method according to claim 8, further comprising a step of performing a predetermined error processing when the form of the liquid film of the organic solvent is abnormal .

According to this method, an effect equivalent to that of the invention of claim 2 can be obtained.
The invention according to claim 10, wherein the plane condition detection step, in parallel with the substrate heating step includes the step of detecting a face within the context of the organic solvent in said top surface of said substrate, of the organic solvent The substrate processing method according to claim 8 or 9, wherein the substrate heating step is terminated when it is determined that a crack has occurred in the liquid film.

According to this method, the same function and effect as those described in connection with the third aspect of the invention can be achieved.
The invention according to claim 11 includes the step of detecting the in-plane situation of the organic solvent on the upper surface of the substrate in parallel with the organic solvent removing step, wherein the in-plane situation detecting step includes 11. The substrate processing method according to claim 8, further comprising a step of performing a predetermined error processing when there is a remaining droplet of the organic solvent on the upper surface of the substrate in the situation detection step. It is.
According to this method, the same function and effect as those described in connection with the fourth aspect of the invention can be achieved.
The invention according to claim 12 is an organic solvent supplying step of supplying an organic solvent having a surface tension lower than water to the upper surface of a horizontally held substrate, and the substrate is heated to increase the temperature of the organic solvent. A substrate heating step of heating on the upper surface of the substrate; an organic solvent removing step of removing the organic solvent from the upper surface of the substrate; and a liquid film of the organic solvent formed so as to cover the upper surface of the substrate. A liquid surface height detecting step for detecting a liquid surface height, wherein either one of the organic solvent supplying step and the organic solvent removing step is performed on the liquid surface height of the liquid film of the detected organic solvent. A substrate processing method is provided.
According to this method, the same function and effect as those described in connection with the fifth aspect of the invention can be achieved.
In the invention according to claim 13, the liquid level detection step is executed in parallel with the organic solvent supply step, and the liquid level height of the liquid film of the organic solvent in the liquid level detection step. The substrate processing method according to claim 12, wherein the organic solvent supplying step is terminated when the predetermined height position is reached.

According to this method, the same function and effect as those described with reference to claim 7 are obtained.
Invention according to claim 1 4, wherein the substrate heating step, the upper surface of the substrate to reach a predetermined temperature higher than the boiling point of the organic solvent, thereby, to the upper surface of the substrate, the upper surface The organic solvent evaporative gas film is formed over the entire upper surface between the organic solvent liquid film formed to cover and the upper surface of the substrate, and above the organic solvent evaporative gas film. The substrate processing method according to claim 8, wherein the liquid film of the organic solvent is levitated .

  According to this method, the upper surface of the substrate can be dried more favorably using the organic solvent.

It is a typical top view of the composition of the substrate processing device concerning one embodiment of the present invention. FIG. 2 is a sectional view of the inside of a chamber provided in the substrate processing apparatus shown in FIG. 1. It is a top view of a substrate holding | maintenance rotation unit and a hot plate shown in FIG. FIG. 4 is a cross-sectional view of FIG. 3 taken along section line IV-IV (No. 1). FIG. 4 is a cross-sectional view of FIG. 3 taken along section line IV-IV (No. 2). FIG. 4 is a cross-sectional view of FIG. 3 taken along section line IV-IV (No. 3). It is sectional drawing which shows the structure of a fixing pin typically. It is sectional drawing which shows the structure of a movable pin typically. It is the figure which looked at the liquid level sensor from the horizontal direction (the 1). It is the figure which looked at the liquid level sensor from the horizontal direction (the 2). It is a top view which shows a liquid level sensor. It is the figure which looked at the visual sensor from the horizontal direction. It is sectional drawing which expands and shows the surface of the board | substrate of the process target of a process unit. It is process drawing for demonstrating the process example of the chemical | medical solution process performed with a process unit. It is a schematic diagram for demonstrating the process example of FIG. It is a schematic diagram for demonstrating the process following FIG. 15B. It is a schematic diagram for demonstrating the process following FIG. 15D. It is a schematic diagram for demonstrating the process following FIG. 15F. It is typical sectional drawing for demonstrating the state of the upper surface of the board | substrate in the process example of FIG. It is a flowchart which shows the flow of a process in an organic-solvent substitution process, a board | substrate high temperature raising process, and an organic-solvent exclusion process (the 1). It is a flowchart which shows the flow of a process in an organic-solvent substitution process, a board | substrate high temperature raising process, and an organic-solvent exclusion process (the 2). It is a flowchart which shows the flow of a process in an organic-solvent substitution process, a board | substrate high temperature raising process, and an organic-solvent exclusion process (the 3). In the substrate high temperature process, it is the schematic diagram which looked at the liquid film of IPA from the horizontal direction. It is a top view which shows the one aspect | mode of the crack which generate | occur | produces in the liquid film of IPA in a board | substrate high temperature process. It is a top view which shows the other aspect of the crack which generate | occur | produces in the liquid film of IPA in a board | substrate high temperature process. It is a top view which shows the other aspect of the crack which generate | occur | produces in the liquid film of IPA in a board | substrate high temperature process. It is a top view which shows the state from which the liquid film of IPA is discharged | emitted normally in the organic solvent exclusion process (the 1). It is a top view which shows the state in which the liquid film of IPA is discharged | emitted normally in the organic solvent exclusion process (the 2) In an organic solvent exclusion process, it is a top view which shows the state currently discharged | emitted while the liquid film of IPA is splitting (the 1). It is a top view which shows the state currently discharged | emitted while dividing the liquid film of IPA in the organic solvent exclusion process (the 2). FIG. 11 is a plan view showing a state in which the liquid film of IPA is discharged while being split in the organic solvent removal step (part 3). In an organic solvent exclusion process, it is a top view which shows the other aspect of the form abnormality of the liquid film of IPA currently discharged | emitted. It is a figure which shows the modification of the liquid level sensor which concerns on this invention (the 1). It is a figure which shows the modification of the liquid level sensor which concerns on this invention (the 2).

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a schematic plan view of a substrate processing apparatus 1 according to an embodiment of the present invention. FIG. 2 is a cross-sectional view of the inside of the chamber 4 provided in the substrate processing apparatus 1.
As shown in FIG. 1, the substrate processing apparatus 1 is a single-wafer type apparatus that processes a disk-shaped substrate W such as a semiconductor wafer one by one. The substrate processing apparatus 1 includes a plurality of processing units 2 that process a substrate W with a processing liquid and a processing gas, a substrate transport robot CR that loads and unloads the substrate W from and into the chamber 4 of each processing unit 2, and substrate processing. And a control device 3 that controls the operation of the device provided in the device 1 and the opening and closing of a valve.

  The processing unit 2 is a single-wafer type unit for performing chemical processing using a chemical on the surface (pattern forming surface) of the circular substrate W. Each processing unit 2 includes a box-shaped chamber 4 having an internal space and a substrate W around a vertical rotation axis A1 passing through the center of the substrate W while holding a single substrate W in the chamber 4 in a horizontal posture. A hot plate (having a substrate holding / rotating unit 5 for rotating the substrate W and a substrate facing surface (upper surface) 6a for heating the substrate W from below and capable of supporting the substrate W from below by contacting the lower surface of the substrate W. (Substrate heating means) 6, treatment liquid supply means for supplying a treatment liquid such as a chemical solution or a rinse liquid to the substrate W held on the substrate holding and rotating unit 5, and the substrate holding and rotating unit 5 or the hot plate 6. An organic solvent supply means for supplying liquid IPA, which is an example of a liquid organic solvent having a surface tension lower than that of water, is formed on the substrate W heated by the hot plate 6. A liquid level sensor (liquid level detecting means) 7 for detecting the liquid level of the IPA liquid film 111 (see FIG. 9 etc.) and a visual sensor for visually detecting the in-plane state of the IPA on the upper surface of the substrate W An in-plane situation detecting means) 8 and a cup 9 capable of accommodating the substrate holding and rotating unit 5 and the hot plate 6 in a sealed state.

FIG. 3 is a plan view of the substrate holding and rotating unit 5 and the hot plate 6. 4-6 is sectional drawing when FIG. 3 is cut | disconnected by cut surface line IV-IV. FIG. 4 shows a state where the hot plate 6 is located at the lower position, and FIG. 5 shows a state where the hot plate 6 is located at the upper position. FIG. 6 shows an inclined posture of the hot plate 6.
As shown in FIGS. 2 to 6, the substrate holding and rotating unit 5 has an annular rotating ring 11 having an outer diameter slightly larger than that of the substrate W. The rotating ring 11 is formed using a resin material having chemical resistance, and has a rotation center concentric with the rotation axis A1 of the substrate W. The rotating ring 11 has an upper surface 11a formed of a horizontally flat annular plane. On the upper surface 11a, a plurality of (for example, six) fixed pins 10 that are immovable with respect to the rotating ring 11, and a plurality of (for example, three) movable pins that are movable with respect to the rotating ring 11 and fewer than the fixed pins 10. Each of the pins 12 is provided.

  The plurality of fixing pins 10 are arranged at equal intervals along the circumferential direction on the upper surface 11 a of the rotating ring 11. The plurality of movable pins 12 are arranged along the circumferential direction on the upper surface 11 a of the rotating ring 11. The plurality of movable pins 12 are provided in a one-to-one correspondence with a predetermined number of the fixed pins 10 adjacent to each other in advance, the same number (for example, three) as the movable pins 12. Each movable pin 12 is disposed at a position close to the corresponding fixed pin 10, that is, the plurality of movable pins 12 are locally disposed in the circumferential direction of the rotating ring 11.

A ring rotating unit 13 for rotating the rotating ring 11 around the rotation axis A1 is coupled to the rotating ring 11. The ring rotation unit 13 is constituted by, for example, a motor and a transmission mechanism associated therewith.
As shown in FIGS. 2 to 6, the hot plate 6 is formed using, for example, ceramic or silicon carbide (SiC), and has a disk shape. The hot plate 6 has a flat substrate-facing surface 6 a that has a slightly smaller diameter than the substrate W. The substrate facing surface 6 a has a smaller diameter than the inner diameter of the rotating ring 11. That is, the hot plate 6 and the rotating ring 11 of the substrate holding and rotating unit 5 do not overlap in the vertical direction. For example, a resistance heater 15 is embedded in the hot plate 6. When the heater 15 is energized, the heater 15 generates heat, whereby the entire hot plate 6 including the substrate facing surface 6a is heated.

  As shown in FIG. 5 and FIG. 6, the substrate W is disposed above the substrate facing surface 6 a with a small distance Wa between the substrate facing surface 6 a due to the abutment of the numerous embosses 61 and the lower surface of the substrate W. Is done. The substrate W is supported on the hot plate 6 by the frictional force generated between the numerous embosses 61 and the lower surface of the substrate W. When the heater 15 generates heat in this state, the substrate facing surface 6a also generates heat, and this heat is generated. , Heat radiation, fluid heat conduction in the space between the substrate facing surface 6 a and the substrate W, and heat transfer through a large number of the embosses 61, are given to the substrate W. Thereby, the substrate W supported by the numerous embosses 61 is heated.

A large number of the embosses 61 may be arranged not only on the entire area of the substrate facing surface 6a but only on the peripheral edge of the substrate facing surface 6a.
The emboss 61 may be a separate member from the hot plate 6 or may be provided integrally with the hot plate 6. Further, the hot plate 6 may be configured such that the emboss 61 is not formed on the substrate facing surface 6a, and the substrate W is directly placed on the substrate facing surface 6a.

As shown in FIGS. 2 and 4 to 6, a vertical plate support shaft 14 is fixed to the hot plate 6 from below. The plate support shaft 14 extends along the vertical direction. The plate support shaft 14 is a hollow shaft, for example, and a power supply line (not shown) to the heater 15 is inserted into the plate support shaft 14.
A plate elevating unit 16 (see FIG. 2 and the like) for raising and lowering the plate support shaft 14 is coupled to the plate support shaft 14. The plate lifting / lowering unit 16 includes, for example, a ball screw and a motor. The plate support shaft 14, the plurality of expansion / contraction units 24, the support member 17, and the hot plate 6 are integrally moved up and down by raising and lowering the plate support shaft 14 by driving the plate lifting unit 16. By driving the plate lifting / lowering unit 16, the hot plate 6 has a lower position (a position shown in FIG. 4) that is farther away from the lower surface of the substrate W held by the substrate holding and rotating unit 5, and the substrate holding and rotating unit 5. Are moved up and down between an upper position (position shown in FIG. 5) located slightly above the lower surface of the substrate W held by the substrate. As described above, since the hot plate 6 and the rotating ring 11 of the substrate holding and rotating unit 5 do not overlap in the vertical direction, the hot plate 6 and the substrate holding and rotating unit 5 do not interfere with each other when the hot plate 6 moves up and down.

  As shown in FIGS. 2 and 4 to 6, the hot plate 6 includes a plurality of (for example, three) expansion / contraction units 24 and a support member having a disk shape or a ring shape (disk shape in FIG. 2). 17 is supported from below by a vertical plate support shaft 14. The support member 17 has a support surface 17 a formed of a horizontal flat surface, and is fixedly attached to the upper end of the plate support shaft 14. A plurality (for example, three) of expansion / contraction units 24 are arranged at equal intervals in the circumferential direction on the peripheral portion of the support surface 17a of the support member 17. As shown in FIG. 3, the arrangement positions of the three expansion / contraction units 24 are aligned with respect to the circumferential direction of the hot plate 6, for example, with the three fixing pins 10 juxtaposed in one of the six fixing pins 10. .

    The expansion / contraction unit 24 is a cylinder provided with an expansion / contraction rod that can expand and contract in the longitudinal direction. The length of the telescopic unit 24 can be continuously adjusted between the maximum reduced state and the maximum enlarged state by extending and contracting the telescopic rod. The plurality of telescopic units 24 are arranged in a posture in which the longitudinal direction of the telescopic rod is oriented in the vertical direction. Each extendable unit 24 supports the peripheral edge of the hot plate 6 from below. The plurality of extendable units 24 have the same specifications. Therefore, the plurality of expansion / contraction units 24 have the same length in the maximum reduced state. Each expansion / contraction unit 24 is coupled with an expansion / contraction drive unit (extension / contraction drive means) 25 for supplying a driving fluid for extending / contracting each expansion / contraction rod in the longitudinal direction. In this embodiment, the expansion / contraction unit 24 and the expansion / contraction drive unit 25 are provided as separate members, but the expansion / contraction unit 24 may be constituted by a single member such as an electromagnetic actuator.

  In the state shown in FIG. 4 or the state shown in FIG. 5, all the expansion / contraction units 24 are kept in the maximum contracted state, and therefore all the expansion / contraction units 24 have the same length. Thereby, the hot plate 6 is maintained in a horizontal posture. In this state, the substrate facing surface 6a of the hot plate 6 forms a horizontal plane, and the substrate W does not move due to the action of the frictional force of the emboss 61, and is still.

From the state shown in FIG. 5, while keeping the length of one of the three telescopic units 24 as it is as shown in FIG. Further, the hot plate 6 is inclined. Thereby, the posture of the hot plate 6 can be changed between a horizontal posture and an inclined posture with a simple configuration.
This will be described in detail with reference to FIG. While keeping the length of a predetermined one of the three expansion units 24 as it is, the lengths of the other two expansion units 225 (only one is shown in FIG. 6) are made longer than before. At this time, the extension amounts of the two expansion / contraction units 225 are equal to each other. Thereby, the posture of the hot plate 6 can be changed to the inclined posture. In the inclined posture of the hot plate 6, the substrate facing surface 6a is inclined with respect to the horizontal plane. The inclination angle at this time is, for example, about 1 °. That is, in the inclined posture of the hot plate 6, the substrate facing surface 6 a is inclined by about 1 °, for example, with respect to the horizontal plane, whereby the upper surface of the substrate W supported by the hot plate 6 is also, for example, about 1 with respect to the horizontal plane. ° Inclined. At this time, with respect to the circumferential direction of the hot plate 6, the intermediate position between the two expansion units 225 is the highest, and the expansion unit 224 is the lowest.

  Further, in a state where the substrate W is in an inclined posture, the expansion unit 224 having the shortest length and the circumferential direction of the hot plate 6 shown in FIG. 6 are aligned (closest to the expansion unit 224 having the shortest length). The first upper shaft portion 72 (see FIG. 7) and the tapered surface 73 (see FIG. 7) of the fixing pin 10 (fixing pin 210) are in contact with the lowest portion of the peripheral edge portion of the inclined substrate W. This prevents the movement of the substrate W in the direction along the substrate facing surface 6a.

  The substrate W is supported on the hot plate 6 by the frictional force generated between the large number of embosses 61 and the lower surface of the substrate W. In a state where the substrate W and the hot plate 6 are in a horizontal posture, the substrate W does not move and is in a stationary state due to the action of the frictional force. On the other hand, when the substrate W is tilted, its own weight acts on the substrate W. If the force in the direction along the substrate facing surface 6a generated with its own weight exceeds the frictional force, the substrate W may move in the direction along the substrate facing surface 6a. However, in the state where the substrate W and the hot plate 6 are inclined, the fixing pin 210 (the fixing pin 10 aligned with the expansion / contraction unit 224 in the circumferential direction of the hot plate 6) is the peripheral portion of the inclined substrate W. This prevents the substrate W from moving in the direction along the hot plate 6 and prevents the substrate W from sliding off from the hot plate 6. Therefore, it is possible to hold both the substrate W and the hot plate 6 in an inclined posture while reliably preventing the substrate W from sliding off from the hot plate 6.

  As shown in FIG. 2, the processing liquid supply means includes a chemical liquid nozzle 26 that discharges a chemical liquid and a rinse liquid nozzle 27 that discharges a rinse liquid. The chemical liquid nozzle 26 and the rinsing liquid nozzle 27 are attached to the tip of an arm 29 extending substantially horizontally with the discharge port directed downward. The arm 29 is provided so as to be swingable around a predetermined rotation axis. The chemical liquid nozzle 26 and the rinsing liquid nozzle 27 are aligned in the swinging direction of the arm 29. The arm 29 is coupled to an arm swing unit 30 for swinging the arm 29 within a predetermined angle range. Due to the swing of the arm 29, the chemical nozzle 26 and the rinsing liquid nozzle 27 are located between the central portion of the substrate W held by the substrate holding / rotating unit 5 or the hot plate 6 and the retracted position set outside the cup 9. You can move between them.

  As shown in FIG. 2, the chemical liquid nozzle 26 is a straight nozzle that discharges the chemical liquid downward in a continuous flow state, for example. A chemical liquid pipe 31 serving as a chemical liquid supply passage from a chemical liquid supply source is connected to the chemical liquid nozzle 26. A chemical liquid valve 32 for opening and closing the supply of the chemical liquid is interposed in the chemical liquid pipe 31. When the chemical liquid valve 32 is opened, the chemical liquid is supplied from the chemical liquid pipe 31 to the chemical liquid nozzle 26. When the chemical liquid valve 32 is closed, the supply of the chemical liquid from the chemical liquid pipe 31 to the chemical liquid nozzle 26 is stopped. Chemicals include sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, aqueous ammonia, hydrogen peroxide, organic acids (such as citric acid and oxalic acid), organic alkalis (such as TMAH: tetramethylammonium hydroxide), surface activity A liquid containing at least one of an agent and a corrosion inhibitor can be employed.

  As shown in FIG. 2, the rinse liquid nozzle 27 is a straight nozzle that discharges the rinse liquid downward in a continuous flow state, for example. The rinsing liquid nozzle 27 is connected to a rinsing liquid pipe 33 serving as a rinsing liquid supply passage from the rinsing liquid supply source. A rinse liquid valve 34 for opening and closing the supply of the rinse liquid is interposed in the rinse liquid pipe 33. When the rinse liquid valve 34 is opened, the rinse liquid is supplied from the rinse liquid pipe 33 to the rinse liquid nozzle 27, and when the rinse liquid valve 34 is closed, the rinse liquid from the rinse liquid pipe 33 to the rinse liquid nozzle 27 is supplied. Supply is stopped.

2 shows a case where the chemical liquid nozzle 26 and the rinsing liquid nozzle 27 are arranged on one arm 29, a configuration in which one nozzle 26, 27 is provided on each of the plurality of arms 29 may be adopted. .
As shown in FIG. 2, the cup 9 includes a lower cup 37 that accommodates the substrate holding and rotating unit 5 and the hot plate 6, and a lid member 39 that closes the opening 38 of the lower cup 37. The lid member 39 closes the opening 38 of the lower cup 37, whereby a sealed cup having a sealed space inside is formed.

  The lower cup 37 has a substantially cylindrical container shape, and has a circular opening 38 on the upper surface. The lower cup 37 is integrally provided with a substantially disc-shaped bottom wall portion 40 and a peripheral wall portion 41 that rises upward from the bottom wall portion 40. The peripheral wall 41 is formed in a cylindrical shape centered on the rotation axis A1. The peripheral wall portion 41 has an annular upper end surface 41a. One end of a waste liquid path (not shown) is connected to the upper surface of the bottom wall portion 40. The other end of the waste liquid path is connected to a waste liquid facility (not shown) outside the machine.

Around the peripheral wall portion 41, a capture cup (not shown) for capturing the processing liquid splashing from the substrate W held on the substrate holding / rotating unit 5 or the hot plate 6 is disposed. It is connected to a waste liquid facility (not shown). A space between the plate support shaft 14 and the center portion of the bottom wall portion 40 is sealed by an annular seal member 43.
The lid member 39 is disposed in a substantially horizontal posture above the lower cup 37. A lid raising / lowering unit 54 is coupled to the lid member 39. The lid lifting / lowering unit 54 includes, for example, a ball screw and a motor. By driving the lid lifting / lowering unit 54, the lid member 39 closes the lid closed position for closing the opening 38 of the lower cup 37, and the lid open position for retracting above the lower cup 37 to open the opening 38 of the lower cup 37. Can be raised and lowered between. On the lower surface of the lid member 39, a cylindrical upper annular groove 39b concentric with the lid member 39 is formed in an area excluding the central portion 39a and the peripheral edge portion 39c.

The central portion 39a of the lower surface of the lid member 39 has a circular horizontal flat surface. The center portion 39 a of the lower surface of the lid member 39 faces the center portion of the upper surface of the substrate W held by the substrate holding and rotating unit 5 or the center portion of the upper surface of the substrate W held by the hot plate 6.
A seal ring 53 is provided on the peripheral edge 39 c of the lower surface of the lid member 39 over the entire circumference. The seal ring 53 is formed using, for example, a resin elastic material. In a state in which the lid member 39 is in the lid closed position, the seal ring 53 disposed on the peripheral edge portion 39c of the lower surface of the lid member 39 abuts on the upper end surface 41a of the lower cup 37 in the entire circumferential direction, and the lid member 39 And the lower cup 37 are sealed.

As shown in FIG. 2, a rinse liquid upper pipe 44, an organic solvent upper pipe 45, and a nitrogen gas upper pipe 46 extend in the vertical direction and are inserted adjacently into the central portion 39 a of the lid member 39.
The lower end of the rinsing liquid upper pipe 44 is opened at the central portion 39 a of the lower surface of the lid member 39 to form a rinsing liquid discharge port 47. A rinse liquid supply source is connected to the upper end of the rinse liquid upper pipe 44. A rinse liquid is supplied to the rinse liquid upper pipe 44 from a rinse liquid supply source. A rinse liquid upper valve 48 for opening and closing the supply of the rinse liquid is interposed in the rinse liquid upper pipe 44.

  The lower end of the organic solvent upper pipe 45 is opened at the central portion 39 a of the lower surface of the lid member 39 to form an organic solvent discharge port 49. An organic solvent supply source is connected to the upper end of the organic solvent upper pipe 45. IPA is supplied to the organic solvent upper pipe 45 from an IPA supply source. The organic solvent upper pipe 45 is provided with an organic solvent valve 50 for opening and closing the supply of liquid IPA. The organic solvent upper pipe 45 and the organic solvent valve 50 constitute organic solvent supply means.

The lower end of the nitrogen gas upper pipe 46 is opened at the central portion 39a on the lower surface of the lid member 39 to form a nitrogen gas discharge port 51 for discharging nitrogen gas (N ₂ ) as an example of an inert gas. . A nitrogen gas supply source is connected to the upper end of the nitrogen gas upper pipe 46. Nitrogen gas is supplied from the nitrogen gas supply source to the nitrogen gas discharge port 51 using the nitrogen gas upper pipe 46 as a nitrogen gas supply passage. The nitrogen gas upper pipe 46 is provided with a nitrogen gas valve 52 for opening and closing the supply of nitrogen gas.

  FIG. 7 is a cross-sectional view schematically showing the configuration of the fixing pin 10. As described above with reference to FIG. 3, the plurality of fixing pins 10 are arranged on the upper surface 11 a of the rotating ring 11 at equal intervals along the circumferential direction. As illustrated in FIG. 7, each fixing pin 10 includes a first lower shaft portion 71 coupled to the rotating ring 11 and a first lower shaft portion 71 integrally formed on the upper end of the first lower shaft portion 71. And an upper shaft portion 72. The first lower shaft portion 71 and the first upper shaft portion 72 are each formed in a cylindrical shape. The first upper shaft portion 72 is provided eccentric from the central axis of the first lower shaft portion 71. A portion of the first lower shaft portion 71 connected to the first upper shaft portion 72 is formed with a tapered surface 73 that gradually becomes larger in diameter as it goes downward.

  FIG. 8 is a cross-sectional view schematically showing the movable pin 12 and the configuration around the movable pin 12. Each movable pin 12 includes a second lower shaft portion 74 extending in the vertical direction coupled to the rotation ring 11 so as to be rotatable around the rotation axis A2, and a second lower shaft in a state where the center axis is eccentric from the rotation axis A2. And a second upper shaft portion 75 fixed to the portion 74. The second upper shaft portion 75 has a cylindrical surface 75 a that can come into contact with the peripheral end of the substrate W. Due to the rotation of the second lower shaft portion 74, the cylindrical surface 75a of the second upper shaft portion 75 is moved away from the rotation axis A1 (see FIG. 2) of the substrate W, and the holding position approaches the rotation axis A1. It is displaced between. Each movable pin 12 includes a chuck opening / closing unit 76. The chuck opening / closing unit 76 opens and closes the holding of the substrate W by displacing the position of the second upper shaft portion 75 between the opening position and the holding position.

  As shown in FIG. 7, in a state where the substrate W is supported from below by the plurality of fixing pins 10, the peripheral end of the substrate W is in contact with the tapered surface 73 of each fixing pin 10. In this state, the position of the second upper shaft portion 75 of the plurality of movable pins 12 is displaced from the open position to the holding position as shown in FIG. When each second upper shaft portion 75 is displaced from the open position to the holding position, the cylindrical surface 75a comes into contact with the peripheral end of the substrate W, and the peripheral end of the substrate W in contact is inward of the substrate W. Push in. As a result, the peripheral end of the substrate W that is in contact with the peripheral end of the substrate W on the opposite side across the rotation axis A1 is positioned on the opposite side of the fixed pin 10 that sandwiches the movable pin 12 and the rotation axis A1. It is pressed against the first upper shaft portion 72. As described above, the second upper shaft portions 75 of the plurality of movable pins 12 are displaced from the open position to the holding position, whereby the plurality of movable pins 12 are held, and thereby the plurality of fixed pins 10 and The substrate W is held in a horizontal posture by the plurality of movable pins 12.

The cylindrical surface 75a is not configured to press the peripheral edge of the substrate W, but a V-groove that opens toward the rotation axis A1 and opens in the horizontal direction is formed in the cylindrical surface 75a. A configuration in which the substrate W is sandwiched by the surface abutting on the peripheral end of the substrate W may be employed.
The control device 3 shown in FIG. 1 is configured by, for example, a microcomputer. The control device 3 controls operations of the plate lifting / lowering unit 16, the ring rotation unit 13, the arm swinging unit 30, the lid lifting / lowering unit 54, the chuck opening / closing unit 76, and the like according to a predetermined program. Further, the control device 3 adjusts the power supplied to the heater 15. Further, the control device 3 controls opening and closing of the chemical liquid valve 32, the rinse liquid valve 34, the rinse liquid upper valve 48, the organic solvent valve 50, the nitrogen gas valve 52, and the like.

9 and 10 are views of the liquid level sensor 7 viewed from the horizontal direction. FIG. 11 is a plan view showing the liquid level sensor 7.
The liquid level sensor 7 is a position sensor that detects whether or not the liquid level of the IPA liquid film 111 formed on the substrate W has reached a predetermined height position. The liquid level sensor 7 is, for example, a photoelectric sensor that optically detects the IPA liquid film 111. In the liquid level sensor 7, the liquid level of the IPA liquid film 111 reaches a predetermined first height level (height position) LV1 and a predetermined second height level (height position) LV2. It detects each. The second height level LV2 is a height position above the first height level LV1.

  As shown in FIGS. 9 and 10, the liquid level sensor 7 includes a first liquid level sensor 77 and a second liquid level sensor 78. The first liquid level sensor 77 detects whether or not the IPA liquid film 111 has reached the first detection line L1 set at the first height level LV1. The first height level LV1 is set to be equal to or higher than the liquid level of the liquid film 111 when the IPA liquid film 111 capable of completely covering the upper surface of the substrate W is formed on the upper surface of the substrate W. Yes. That is, when the liquid level of the IPA liquid film 111 on the substrate W is detected by the first liquid level sensor 77, an IPA liquid film that can completely cover the upper surface of the substrate W is formed. To be judged.

  The second liquid level sensor 78 detects whether or not the IPA liquid film 111 has reached the second detection line L2 set to the second height level LV2. The second height level LV2 is a state in which the liquid surface of the IPA liquid film 111 held on the hot plate 6 is well floating above the substrate W in the substrate heating step (S6) described later. The liquid level of the liquid film 111 of IPA is set. That is, when the liquid level of the IPA liquid film 111 on the substrate W held on the hot plate 6 is detected by the second liquid level sensor 78, the IPA liquid film 111 is good above the substrate W. It is judged that it has surfaced.

  Each of the first and second liquid level sensors 77 and 78 includes a pair of light emitting elements 77A and 78A and light receiving elements 77B and 78B, as shown in FIG. 9, for example. The liquid level sensors 77 and 78 are transmissive sensors that detect the light generated from the light emitting elements 77A and 78A and passed on the upper surface of the substrate W by the light receiving elements 77B and 78B. The light emitting elements 77A and 78A and the light receiving elements 77B and 78B are arranged on both sides of the substrate W, respectively. The detection outputs of the first and second liquid level sensors 77 and 78 are respectively given to the control device (see FIG. 1).

As shown in FIG. 11, each of the detection lines L <b> 1 and L <b> 2 is set above the upper surface of the substrate W so as to be parallel to each other (for example) and horizontally. That is, a plurality of pairs of light emitting elements 77A and light receiving elements 77B of the first liquid level sensor 77 and a plurality of pairs of light emitting elements 78A and light receiving elements 78B of the second liquid level sensor 78 are provided.
In addition, although the case where the plurality of first detection lines L1 and the plurality of second detection lines L2 are respectively arranged in parallel has been described as an example, the plurality of first detection lines L1 and the plurality of first detection lines L1 are arranged. The two detection lines L2 may cross each other. Each detection line L1, L2 may be one instead of a plurality.

FIG. 12 is a diagram of the visual sensor 8 as seen from the horizontal direction.
The visual sensor 8 captures (captures) the upper surface of the substrate W, and acquires and reproduces (reproduces) an image captured by the camera 81 and analyzes the image (in-plane situation determination unit). 82.
The camera 81 incorporates an image sensor such as a CCD or CMOS. The camera 81 is fixedly attached to, for example, the lower surface of the lid member 39 with the light incident surface facing downward. At this time, the imaging range of the camera 81 includes the entire area of the upper surface of the substrate W held by the substrate holding / rotating unit 5 or the hot plate 6.

FIG. 2 shows an example in which the camera 81 is arranged in the central portion 39a of the lower surface of the lid member 39. However, the camera 81 may be arranged on the lower surface of the lid member 39 except for the central portion 39a. Alternatively, it may be supported by a member other than the lid member 39. That is, the arrangement position of the camera 81 only needs to be above the substrate W.
The image processing unit 82 is included in the control device 3, for example. The image processing unit 82 processes (reproduces) an image photographed by the camera 81 based on an electrical signal given from the camera 81 to the control device 3 and analyzes the image.

  The upper surface of the substrate W is photographed by the camera 81, and a planar image of the upper surface of the substrate W is acquired by the image processing unit 82. Based on this planar image, the image processing unit 82 uses the X and Y coordinates of the boundary portion of the IPA liquid film 111 on the upper surface of the substrate W (when the plane parallel to the upper surface of the substrate W is the XY plane). X-axis direction coordinate and Y-axis direction coordinate). That is, the image processing unit 82 determines the in-plane state of the IPA liquid film 111. Thereby, the in-plane situation of the IPA on the upper surface of the substrate W can be visually detected by the visual sensor 8. Further, the control device 3 controls the shooting operation by the camera 81.

  FIG. 13 is an enlarged cross-sectional view showing the surface of the substrate W to be processed of the processing unit 2. The substrate W to be processed is, for example, a silicon wafer, and a fine pattern 101 is formed on the surface (upper surface 100) that is a pattern forming surface thereof. As shown in FIG. 13, the fine pattern 101 may be a structure in which structures 102 having convex shapes (columnar shapes) are arranged in a matrix. In this case, the line width W1 of the structural body 102 is set to about 10 nm to 45 nm, for example, and the gap W2 of the fine pattern 101 is set to about 10 nm to about several μm, for example.

Further, the fine pattern 101 may be a pattern in which a line pattern formed by fine trenches is repeatedly arranged.
Further, the fine pattern 101 may be formed by providing a plurality of fine holes (voids or pores) in the thin film.
The fine pattern 101 includes, for example, an insulating film. Further, the fine pattern 101 may include a conductor film. More specifically, the fine pattern 101 is formed of a laminated film in which a plurality of films are laminated, and may further include an insulating film and a conductor film. The fine pattern 101 may be a pattern composed of a single layer film. The insulating film may be a silicon oxide film (SiO ₂ film) or a silicon nitride film (SiN film). The conductor film may be an amorphous silicon film into which impurities for reducing resistance are introduced, or may be a metal film (for example, a metal wiring film).

The film thickness T of the fine pattern 101 is, for example, about 50 nm to 5 μm. The fine pattern 101 may have, for example, an aspect ratio (ratio of the film thickness T to the line width W1) of, for example, about 5 to 500 (typically about 5 to 50).
FIG. 14 is a process diagram for explaining a processing example of the substrate processing executed in the processing unit 2. 15A to 15H are schematic diagrams for explaining a processing example. 16A to 16C are schematic cross-sectional views for explaining the state of the upper surface of the substrate W in the processing example. FIGS. 17-19 is a flowchart which shows the flow of a process in an organic-solvent substitution process (S5), a board | substrate high temperature raising process (S6), and an organic-solvent removal process (S7). FIGS. 21 to 23 are plan views showing aspects of the crack 113 generated in the liquid film 111 of IPA in the substrate temperature increasing step (S6). FIG. 23 is a schematic view of the IPA liquid film viewed from the horizontal direction in the substrate high temperature step (S6). 24 and 25 are plan views showing a state in which the IPA liquid film 111 is normally discharged in the organic solvent removal step (S7). 26 to 28 are plan views showing a state in which the IPA liquid film is discharged while being split in the organic solvent exclusion step (S7).

In the following, reference is made to FIGS. 4 to 6 and FIGS. 9 to 28 will be referred to as appropriate. The “surface (upper surface) of the substrate W” in the following description includes the surface (upper surface) of the substrate W itself and the surface (upper surface) of the fine pattern 101.
When the substrate W is processed by the processing unit 2, a substrate loading process (step S <b> 1) for loading an unprocessed substrate W into the chamber 4 is performed. Prior to the substrate carrying-in step (S1), the control device 3 turns on the heater 15 (energized state), and the hot plate 6 is largely retracted downward from the holding position of the substrate W by the substrate holding and rotating unit 5. It arrange | positions in a position (position shown in FIG. 4), and makes all the nozzles retract from the upper direction of the board | substrate holding | maintenance rotation unit 5. FIG. Further, all the movable pins 12 are opened.

  In the substrate carrying-in process (S1), the control device 3 causes the hand of the substrate transport robot CR (see FIG. 1) holding the substrate W to enter the chamber 4, and causes the substrate transport robot CR to move to the pattern forming surface (surface). ) Is directed upward, and the substrate W is delivered to the substrate holding and rotating unit 5. The substrate W received by the substrate holding and rotating unit 5 is supported from below by the plurality of fixed pins 10, and then the control device 3 puts the plurality of movable pins 12 in a sandwiched state. As a result, as shown in FIG. 15A, the substrate W is held in a horizontal position by a plurality of (for example, six) fixed pins 10 and a plurality of (for example, three) movable pins 12 (in FIG. 15A, Only the fixing pin 10 is shown). After delivering the substrate W to the substrate holding and rotating unit 5, the control device 3 retracts the hand of the substrate transport robot CR from the chamber 4.

When the substrate W is sandwiched between the plurality of fixed pins 10 and the plurality of movable pins 12, the control device 3 controls the ring rotation unit 13 to start the rotation of the substrate W. The substrate W is raised to a predetermined liquid processing rotation speed (for example, about 100 to 1500 rpm) and maintained at the liquid processing rotation speed.
The heater 15 is turned on from the substrate carrying-in step (S1), and thus the hot plate 6 is in a heat generating state, but is held by the hot plate 6 and the substrate holding / rotating unit 5 in the lower position. Since the distance from the substrate W is sufficiently large, the heat from the hot plate 6 does not reach the substrate W sufficiently.

Next, a chemical supply process (step S2) for supplying the chemical to the substrate W is performed.
Specifically, as shown in FIG. 15B, the control device 3 controls the arm swing unit 30 to swing the arm 29 from the home position and move the chemical nozzle 26 from the retracted position onto the substrate W. Let Thereby, the chemical solution nozzle 26 is arranged at the processing position (the processing position on the rotation axis A1 of the substrate W above the substrate W). After the chemical liquid nozzle 26 is disposed at the processing position, the control device 3 opens the chemical liquid valve 32. As a result, the chemical liquid is discharged from the discharge port of the chemical liquid nozzle 26, and the chemical liquid is supplied to the upper surface of the substrate W.

  The chemical solution supplied to the central portion of the upper surface of the substrate W receives a centrifugal force due to the rotation of the substrate W and flows toward the peripheral portion of the substrate W on the upper surface of the substrate W. Thereby, the chemical liquid is supplied to the entire upper surface of the substrate W, and the entire area of the upper surface of the substrate W is processed with the chemical liquid. The chemical solution supplied to the upper surface of the substrate W is scattered from the peripheral portion of the substrate W toward the side of the substrate W. The liquid droplets of the chemical solution discharged from the substrate W held by the substrate holding / rotating unit 5 fall downward.

The chemical liquid scattered from the peripheral edge of the substrate W is received by the inner wall of the aforementioned capture cup, sent to a waste liquid facility (not shown) outside the apparatus via a waste liquid path (not shown), and processed there. Instead of the waste liquid facility, it may be sent to the recovery facility and reused there.
When a predetermined time has elapsed from the start of the discharge of the chemical liquid, the control device 3 closes the chemical liquid valve 32 and stops the discharge of the chemical liquid from the chemical liquid nozzle 26.

Next, a rinsing step (step S3) for removing the chemical solution from the substrate W is performed.
Specifically, as shown in FIG. 15C, the control device 3 controls the arm swing unit 30 to swing the arm 29 and arrange the rinse liquid nozzle 27 at the processing position. After the rinse liquid nozzle 27 is arranged at the processing position, the control device 3 opens the rinse liquid valve 34. Thereby, the rinse liquid is discharged from the discharge port of the rinse liquid nozzle 27.

The rinse liquid supplied to the central portion of the upper surface of the substrate W receives a centrifugal force due to the rotation of the substrate W and flows toward the peripheral portion of the substrate W on the upper surface of the substrate W. Thereby, the rinsing liquid is supplied to the entire upper surface of the substrate W, and the chemical liquid adhering to the upper surface of the substrate W is washed away. The rinse liquid supplied to the upper surface of the substrate W is scattered from the peripheral edge of the substrate W toward the side of the substrate W.
The rinse liquid splashed from the peripheral edge of the substrate W is received by the inner wall of the peripheral wall portion 41 of the lower cup 37 and is accumulated on the bottom portion of the lower cup 37 along the inner wall. The first rinse liquid collected at the bottom of the lower cup 37 is sent to a waste liquid facility (not shown) outside the apparatus through a waste liquid path (not shown) and processed there.

When a predetermined time has elapsed from the start of the discharge of the rinse liquid, the control device 3 closes the rinse liquid valve 34 to stop the discharge of the rinse liquid from the rinse liquid nozzle 27 and controls the arm swing unit 30. Return the arm 29 to its home position. Thereby, the chemical liquid nozzle 26 and the rinse liquid nozzle 27 are returned to the retracted position.
Next, the control device 3 controls the lid lifting unit 54 to lower the lid member 39 to the lid closed position as shown in FIG. 15D. The opening 38 of the lower cup 37 is closed by the lid member 39 lowered to the lid closing position.
In this state, when the lid member 39 and the lower cup 37 are coupled by a lock member (not shown), the seal ring 53 disposed on the peripheral edge portion 39c of the lower surface of the lid member 39 extends over the entire circumferential direction. The lower cup 37 abuts on the upper end surface 41a of the upper end surface 33, and the space between the lower cup 37 and the lid member 39 is sealed. Thereby, the internal space of the lower cup 37 and the lid member 39 is sealed. In this state, the rinse liquid discharge port 47, the organic solvent discharge port 49, and the nitrogen gas discharge port 51 are disposed so as to face the upper surface of the substrate W, respectively.

Next, the final rinsing process (step S4) is performed on the substrate W.
Specifically, as shown in FIG. 15D, the control device 3 opens the rinse liquid upper valve 48 and discharges the rinse liquid from the rinse liquid discharge port 47 of the rinse liquid upper pipe 44. The rinse liquid discharged from the rinse liquid discharge port 47 is deposited on the center of the upper surface of the substrate W.
The rinse liquid supplied to the central portion of the upper surface of the substrate W receives a centrifugal force due to the rotation of the substrate W and flows toward the peripheral portion of the substrate W on the upper surface of the substrate W. Accordingly, the rinsing liquid is supplied to the entire upper surface of the substrate W, and the rinsing process is performed on the upper surface of the substrate W. In the final rinsing step (S4), up to the bottom of the gap of the fine pattern 101 (see FIG. 13) formed on the top surface 100 (see FIG. 13) of the substrate W (a position very close to the top surface 100 of the substrate W itself in the space). Rinse solution spreads.

Further, the rinse liquid splashed from the peripheral edge portion of the substrate W is received by the inner wall of the peripheral wall portion 41 of the lower cup 37 and is accumulated on the bottom portion of the lower cup 37 along the inner wall. The first rinse liquid collected at the bottom of the lower cup 37 is sent to a waste liquid facility (not shown) outside the apparatus through a waste liquid path (not shown) and processed there.
When a predetermined time has elapsed from the start of the discharge of the rinse liquid, the control device 3 closes the rinse liquid upper valve 48 and stops the discharge of the rinse liquid from the rinse liquid discharge port 47.

Next, an organic solvent replacement step (step S5) is performed in which liquid IPA is supplied to the upper surface of the substrate W and the rinse liquid on the upper surface of the substrate W is replaced with IPA.
When the discharge timing of IPA is reached in the organic solvent replacement step (S5) (YES in step S21 in FIG. 17), the control device 3 opens the organic solvent valve 50 and the organic solvent upper pipe 45 is organic as shown in FIG. 15E. The liquid IPA is started to be discharged in a continuous flow from the solvent discharge port 49 (step S22 in FIG. 17). The IPA discharged from the organic solvent discharge port 49 is a liquid having a normal temperature (for example, 25 ° C.), that is, a liquid temperature lower than the boiling point (82.4 ° C.) of IPA. The liquid IPA discharged from the organic solvent discharge port 49 is deposited on the center of the upper surface of the substrate W. The organic solvent replacement step (S5) is started by starting the discharge of IPA.

  The liquid IPA supplied to the central portion of the upper surface of the substrate W receives a centrifugal force due to the rotation of the substrate W and flows toward the peripheral edge of the substrate W. Therefore, the liquid IPA supplied to the central portion of the upper surface of the substrate W can be spread toward the peripheral portion, and thus the liquid IPA can be spread over the entire upper surface of the substrate W. At this time, the hot plate 6 is in the lower position (position shown in FIG. 4), and the heat from the hot plate 6 is not sufficiently transmitted to the substrate W. Therefore, the temperature of the upper surface of the substrate W is, for example, normal temperature, and the IPA flows on the upper surface of the substrate W while maintaining the normal temperature. As a result, as shown in FIG. 15E, an IPA liquid film 111 (see also FIG. 9 and the like) covering the upper surface is formed on the upper surface of the substrate W. After the start of IPA discharge, the control device 3 monitors the liquid level height of the IPA liquid film 111 with the liquid level sensor 7 (step S23 in FIG. 17 (liquid level height detection step)).

Since the IPA supplied to the upper surface of the substrate W is a liquid, the rinsing liquid present in the gaps of the fine pattern 101 can be satisfactorily replaced as shown in FIG. 16A. Since the IPA liquid film 111 covers the entire upper surface of the substrate W, the rinsing liquid can be satisfactorily replaced with the liquid IPA over the entire upper surface of the substrate W.
When the liquid level height of the IPA liquid film 111 detected by the liquid level sensor 7 reaches the first level LV1 (see FIG. 9), the control device 3 sets the thickness of the IPA liquid film 111. It is determined that the value has been reached (YES in step S24 in FIG. 17), and the discharge of the liquid IPA from the organic solvent discharge port 49 is stopped (step S25 in FIG. 17). The first level LV1 corresponds to, for example, the thickness of the liquid film when a liquid film capable of completely covering the upper surface of the substrate W with the liquid film 111 of IPA is formed. Since the supply of IPA is stopped after the IPA liquid film 111 has reached a desired thickness, it is possible to save IPA liquid. Further, as a result of preventing the thickness of the IPA liquid film 111 from being increased, the thickness of the IPA liquid film 111 floating above the substrate W can be reduced in the substrate temperature increasing step (S6) described below, and thereafter The execution period of the organic solvent exclusion step (S7) to be executed can be shortened.

  In the organic solvent replacement step (S5), the rotation of the substrate W may be stopped, or the substrate W may be rotated at a low speed (paddle speed) of about 10 rpm. As the substrate W is decelerated, the centrifugal force acting on the liquid IPA on the substrate W becomes zero or small, and the centrifugal force acting on the IPA is greater than the surface tension acting between the IPA and the substrate surface. Get smaller. As a result, the IPA is not discharged from the peripheral edge of the substrate W but stays on the upper surface of the substrate W, and a liquid film of IPA in the paddle state is held on the upper surface of the substrate W.

The first level LV1 described above may be changed according to the rotation of the substrate W in the organic solvent replacement step (S5). Specifically, when the substrate W is rotated at the paddle speed, the first level LV1 may be set higher than when the substrate W is rotated at a speed equal to or higher than the paddle speed.
When a predetermined time has elapsed from the start of IPA supply (YES in step S26 in FIG. 17), the control device 3 controls the plate lifting unit 16 to move the hot plate 6 to the lower position (position shown in FIG. 4). To the upper position (position shown in FIG. 5). When the hot plate 6 is raised to the same height as the rotating ring 11, the substrate facing surface 6 a of the hot plate 6 comes into contact with the lower surface of the substrate W. Thereafter, when the control device 3 continues to raise the hot plate 6, the substrate W is detached from the substrate holding and rotating unit 5, and the substrate W is delivered to the hot plate 6. The substrate W delivered to the hot plate 6 is supported from below by a large number of embossments 61. Even after the substrate W is delivered, the hot plate 6 continues to rise, and when it reaches the upper position, the hot plate 6 stops rising. A state in which the hot plate 6 is arranged at the upper position is shown in FIGS. 15F and 5.

  When the substrate W is delivered to the hot plate 6, heating of the lower surface of the substrate W is started (step S <b> 27 in FIG. 18), thereby starting a substrate high temperature process (step S <b> 6). The heater 15 is always on, and therefore the hot plate 6 (substrate facing surface 6a) is in a heat generating state. In a state where the substrate W is placed on the hot plate 6, the heat from the substrate facing surface 6 a causes heat radiation, fluid heat conduction in the space between the substrate facing surface 6 a and the substrate W, and a large number of embosses 61. Is applied to the lower surface of the substrate W by heat transfer through the substrate, whereby the substrate W is heated. Along with this, the IPA liquid film on the substrate W is heated. The amount of heat per unit area given to the substrate W is substantially uniform over the entire area of the substrate W.

After the heating of the substrate W is started, the control device 3 monitors the liquid level height of the IPA liquid film 111 by the liquid level sensor 7 (step S28 in FIG. 18, a liquid level detection process). Further, after the heating of the substrate W is started, the control device 3 monitors the shape of the IPA liquid film 111 by the camera 81 of the visual sensor 8 (step S29 in FIG. 18, first shape abnormality detection step).
In the substrate temperature increasing step (S6), a predetermined liquid film floating temperature (predetermined) that is 40 to 120 ° C. higher than the boiling point of IPA (82.4 ° C.) by heating the substrate W with the hot plate 6 The temperature is raised to TE1.

  Referring to FIGS. 16A and 16B, after the temperature of the upper surface of the substrate W reaches the liquid film floating temperature TE1, the temperature of the upper surface of the substrate W (the upper surface of the fine pattern 101, more specifically, the upper surface of each structure 102). The temperature of the end face 102A) is maintained at the liquid film floating temperature TE1. The entire surface of the upper surface of the substrate W is held at the liquid film floating temperature TE1. At this time, the heat generation amount per unit time of the heater 15 is set so that the upper surface of the substrate W placed on the hot plate 6 becomes the liquid film floating temperature TE1 by heating from the hot plate 6.

  After a while after the temperature of the upper surface of the substrate W reaches the liquid film floating temperature TE1, a part of the liquid film 111 of the IPA on the upper surface of the substrate W evaporates to form a gas phase and fill the gap of the fine pattern 101 and the substrate W. An IPA evaporative gas film 112 is formed in a space above the upper surface (the upper end surface 102A of each structure 102). Thereby, the liquid film 111 of IPA floats from the upper surface of the substrate W (the upper end surface 102A of each structure 102) (see FIG. 16B).

  Further, the gap between the fine patterns 101 is filled with the gas phase IPA. Therefore, only a very small surface tension is generated between adjacent structures 102. As a result, the collapse of the fine pattern 101 due to the surface tension can be suppressed or prevented. Further, in the state of FIG. 16B, the IPA liquid film 111 floats from the upper surface of the substrate W (the upper end surface 102 </ b> A of each structure 102), and thus occurs between the upper surface of the substrate W and the IPA liquid film 111. The magnitude of the frictional force is substantially zero.

  As shown in FIG. 20, when the liquid level height of the IPA liquid film 111 detected by the liquid level sensor 7 reaches the second level LV2 (YES in step S32 of FIG. 18), the control is performed. The apparatus 3 determines that the IPA liquid film 111 is well floating. That is, in the substrate temperature increasing step (S6), the liquid level height of the IPA liquid film 111 increases as the IPA liquid film 111 floats, so that the liquid level height of the IPA liquid film 111 is detected. Thus, it is possible to determine whether or not the IPA liquid film 111 floats. Thereby, the floating of the liquid film 111 of IPA can be confirmed in the substrate temperature increasing step (S6).

  By the way, a crack 113 may occur in the liquid film 111 of IPA floating above the substrate W. Examples of the crack 113 include the crack 113A shown in FIG. 21, the hole 113B shown in FIG. 22, and the arc-shaped notch 113C shown in FIG. As a result of the occurrence of these cracks 113, a liquid-solid interface between the IPA droplet and the substrate W is formed at that portion, and therefore there is a risk that the pattern collapses due to surface tension during drying. Further, a defect such as a watermark may occur in the portion where the crack 113 is generated on the upper surface of the substrate W after drying. Therefore, it is examined whether or not the crack 113 (form abnormality) has occurred in the IPA liquid film 111 that has been levitated.

  As a factor causing the crack 113 in the floating IPA liquid film 111, local overheating of the substrate W can be considered. When heating unevenness occurs in the heating of the substrate W from the hot plate 6, the substrate W is partially overheated, and a large amount of IPA vapor is generated in that portion. Due to the generation of a large amount of IPA evaporation gas, the IPA evaporation gas film 112 breaks through the IPA liquid film 111 above and blows out above the IPA liquid film 111, and as a result, breaks into the IPA liquid film 111. 113 (see also FIG. 16C).

Further, in the substrate temperature increasing step (S6), the crack 113 may be generated in the IPA liquid film 111 before floating.
When occurrence of crack 113 in IPA liquid film 111 is detected (YES in step S30 in FIG. 18), control device 3 executes error processing (step S31 in FIG. 18, error processing step). When the crack 113 is generated, the control device 3 can acquire the position, size, shape, and the like of the crack 113 from the image signal from the camera 81. In the error process (S31), the control device 3 stores in the log that a feature abnormality has occurred in the substrate W, and stores the position, size, shape, and the like of the crack 113 in the log.

After the IPA liquid film 111 is confirmed to float (YES in step S32 of FIG. 18), the control device 3 stops the discharge of the IPA from the organic solvent discharge port 49 and performs the substrate temperature increasing step (S6). finish. Next, the control device 3 executes an organic solvent removing step (step S8) for removing the IPA liquid film 111 above the upper surface of the substrate W.
When the floating of the IPA liquid film 111 is confirmed (YES in step S32 in FIG. 18), the control device 3 immediately applies a force for moving toward the side of the substrate W to the IPA liquid film 111. Let Specifically, as shown in FIGS. 15G and 6, the control device 3 controls the expansion / contraction drive unit 25 to change the hot plate 6 (the upper surface of the substrate W) from the horizontal posture to the inclined posture (see FIG. 19). Step S33). In the inclined posture of the hot plate 6 at this time, the substrate facing surface 6a is inclined with respect to the horizontal plane. The inclination angle at this time is, for example, about 1 °. That is, in the inclined posture of the hot plate 6, the substrate facing surface 6 a is inclined by about 1 °, for example, with respect to the horizontal plane, whereby the upper surface of the substrate W supported by the hot plate 6 is also, for example, about 1 with respect to the horizontal plane. ° Inclined. At this time, with respect to the circumferential direction of the hot plate 6, the intermediate position between the two expansion units 225 (see FIG. 6) is the highest, and the expansion unit 224 (see FIG. 6) is the lowest. Yes.

After the inclination of the upper surface of the substrate W, the control device 3 monitors the shape of the IPA liquid film 111 by the camera 81 of the visual sensor 8 (step S34 in FIG. 19; second feature abnormality detection step). Thus, it is examined whether or not the IPA liquid film 111 is removed from the substrate W while maintaining a normal shape (for example, without being split).
As described above, the magnitude of the frictional force generated between the upper surface of the substrate W and the IPA liquid film 111 is substantially zero at the start of the organic solvent removal step (S7). For this reason, the IPA liquid film 111 easily moves along the upper surface of the substrate W. In the organic solvent removal step (S7), since the upper surface of the substrate W is inclined with respect to the horizontal plane, the IPA liquid film 111 receives its own weight as shown in FIGS. It moves along the upper surface of the substrate W toward the discharge direction DD toward the lowest part of the peripheral edge. The movement of the IPA liquid film 111 is performed while maintaining the liquid mass state (that is, without being divided into a large number of droplets), whereby the IPA liquid film 111 is removed from above the substrate W.

By the way, when the crack 113 as shown in FIG. 26 occurs in the IPA liquid film 111 discharged in the discharge direction DD in the organic solvent removing step (S7), as shown in FIG. The liquid mass state of the film 111 is not maintained and is discharged out of the substrate W while being divided. In this case, a large number of watermarks may be generated on the upper surface of the dried substrate W.
After the substrate W is dried, a watermark is generated at a portion where the IPA finally evaporates on the upper surface of the substrate W. It is desirable that the watermark be generated at the peripheral portion of the upper surface of the substrate W. However, it is desirable to generate it at only one place if possible. Therefore, in the organic solvent removal step (S7), it is necessary to remove the IPA liquid film 111 in a liquid mass state and evaporate the IPA contained in the IPA liquid film 111 at one place on the peripheral edge of the substrate W. There is. In the organic solvent removing step (S7), when the liquid film 111 of the IPA liquid film 111 is discharged out of the substrate W in a state where the liquid mass 111 is not maintained, a plurality of pieces are formed on the periphery of the upper surface of the substrate W as shown in FIG. As a result, the IPA droplets 114 and a plurality of drying zones coexist, and then the IPA droplets 114 evaporate. As a result, a large number of watermarks may be generated on the top surface of the substrate W after drying.

When it is detected that a shape abnormality as shown in FIGS. 26 to 28 has occurred in the liquid film 111 of IPA discharged from above the substrate W (NO in step S35 of FIG. 19), the control device 3 Performs error processing (step S36 in FIG. 19, error processing step). In the error processing (S36), the control device 3 stores in the log that a feature abnormality has occurred in the substrate W.
The abnormal shape of the IPA liquid film 111 detected in step S35 of FIG. 19 is not limited to the splitting of the IPA liquid film 111. For example, as shown in FIG. 29, in the organic solvent removal step (S7), the entire area of the peripheral edge of the upper surface of the substrate W is a dry region, and the IPA liquid film 111 is formed in the central portion of the upper surface of the substrate W. Even when it is detected, the controller 3 may execute the error process (S36), assuming that the shape of the IPA liquid film 111 is abnormal.

When the predetermined period is over from the start of the organic solvent removal step (S7) (YES in step S37 in FIG. 19), the control device 3 causes the camera 81 of the visual sensor 8 to leave the IPA droplets on the upper surface of the substrate W. Is detected (step S38, remaining droplet detection step).
When the IPA droplet is not detected on the upper surface of the substrate W (NO in step S39), the control device 3 controls the expansion / contraction drive unit 25 to return the hot plate 6 to the horizontal posture (step S40 in FIG. 19). And the plate raising / lowering unit 16 is controlled to lower the hot plate 6 from the upper position (position shown in FIG. 5) to the lower position (position shown in FIG. 4). When the hot plate 6 is lowered, the substrate W is detached from the hot plate 6, and the substrate W is delivered to the substrate holding and rotating unit 5. The substrate W received by the substrate holding and rotating unit 5 is supported from below by a plurality of fixing pins 10. The movable pin 12 is in an open state, so that the substrate W is not sandwiched between the fixed pin 10 and the movable pin 12 or the like. After the hot plate 6 is lowered to the lower position, the distance between the hot plate 6 and the substrate W held by the substrate holding and rotating unit 5 is sufficiently larger than when the hot plate 5 is in the upper position. Therefore, the heat from the hot plate 6 (heat radiation, fluid heat conduction in the space between the substrate facing surface 6a and the substrate W, and heat transfer through the numerous embosses 61) does not reach the substrate W sufficiently. . Thereby, the heating of the substrate W by the hot plate 6 is completed (step S41 in FIG. 19), and the temperature of the substrate W is lowered to approximately room temperature.

  On the other hand, in the droplet detection in step S38 in FIG. 19, if there is any remaining IPA droplet on the upper surface of the substrate W (YES in step S39 in FIG. 19), after waiting until no IPA droplet is detected. The control device 3 returns the hot plate 6 to the horizontal posture, and lowers the hot plate 6 to the lower position (position shown in FIG. 4). Since the organic solvent removal step (S7 in FIG. 14) is terminated after the IPA liquid picking is no longer detected, no IPA droplets remain on the upper surface of the substrate W after the organic solvent removal step (S7).

Further, the control device 3 drives a lock member (not shown) to release the coupling between the lid member 39 and the lower cup 37. Then, as shown in FIG. 15H, the control device 3 controls the lid lifting unit 54 to raise the lid member 39 to the open position.
As a result, the chemical processing for one substrate W is completed, and the substrate carrying robot CR (see FIG. 1) performs a substrate unloading process (Step S8 in FIG. 14) in which the processed substrate W is unloaded from the chamber 4. Is called.

The operator can specify the substrate W on which a defect has occurred after drying by referring to the log after a series of chemical solution processing. In addition, it is possible to specify a region where a defect occurs in the upper surface (front surface) of the substrate W.
As described above, the liquid surface of the IPA liquid film 111 is detected in parallel with the substrate temperature increasing step (S6). In the substrate temperature increasing step (S6), the liquid level height of the IPA liquid film 111 rises as the IPA liquid film 111 floats, so by detecting the liquid level height of the IPA liquid film 111, Whether or not the IPA liquid film 111 floats can be determined. Thereby, the floating of the liquid film 111 of IPA can be confirmed in the substrate temperature increasing step (S6).

Further, in response to the IPA liquid film 111 rising from the upper surface of the substrate W, the organic solvent removing step (S7) is started. In this case, compared with the case where the organic solvent removal step (S7) is started after waiting for a predetermined period from the start of the substrate high temperature step (S6), the entire processing time is shortened. Is possible.
Further, in parallel with the substrate high temperature process (S6), the abnormal shape of the IPA liquid film 111 is detected. Therefore, it is possible to accurately detect the occurrence of the crack 113 in the IPA liquid film 111 that is floating. Thereby, the operator can specify the substrate W on which a defect has occurred after drying. If the IPA liquid film 111 is cracked in the substrate temperature increasing step (S6), there is a possibility that the substrate W after drying may be defective (that is, a defective product). In addition, since the remaining IPA droplets are detected in the organic solvent removal step (S7), the IPA droplets are formed on the upper surface of the substrate W after the organic solvent removal step (S7). It can be surely prevented from remaining.

  In parallel with the organic solvent removal step (S7), the abnormal shape of the IPA liquid film 111 discharged from above the substrate W is detected. Therefore, it is possible to detect whether or not the IPA liquid film 111 is excluded from the substrate W while maintaining a normal shape (for example, without being split). If the organic solvent liquid film breaks and is discharged outside the substrate W, there may be a problem with the dried substrate W (that is, a defective product). It is possible to keep it.

  In the processing example of FIG. 14, it has been described that the final rinsing step (S4) is performed in a state where the inner space of the lower cup 37 and the lid member 39 is sealed. The final rinsing step (S4) may be performed in a state where the space is open (the lid member 39 is in the open position). The rinsing liquid from the rinsing liquid discharge port 47 of the rinsing liquid upper pipe 44 may be supplied to the upper surface of the substrate W, or the rinsing liquid nozzle 27 is disposed to face the upper surface of the substrate W, and the rinsing liquid nozzle 27 A rinse liquid may be supplied to the upper surface of the substrate W. In this case, the internal space of the lower cup 37 and the lid member 39 is sealed after the final rinsing step (S4).

Further, in the processing example of FIG. 14, the case where the chemical solution supply step (S2) is performed only once is illustrated, but may be repeated a plurality of times (twice).
Further, in the chemical solution supplying step (S2) and the rinsing step (S3) in the processing example of FIG. 14, only the upper surface processing of the substrate W has been described as an example. In these steps (S2, S3), the upper and lower side processing is performed. May be executed.

Moreover, in the chemical | medical solution supply process (S2) of the process example of FIG. 14, and the rinse process (S3), only the upper surface process was mentioned as an example, but in these processes (S2, S3), an up-and-down double-sided process is performed. It may be a thing.
In the processing example of FIG. 14, the rinsing step (S3) may be omitted.
As mentioned above, although one Embodiment of this invention was described, this invention can be implemented with another form.

For example, as shown in FIGS. 30 and 31, a displacement sensor that detects the distance between the liquid surface of the IPA liquid film 111 of the substrate W may be adopted as the liquid level sensor 7. In this case, the liquid level sensor 7 can employ various displacement sensors such as an optical sensor that optically detects IPA using a laser beam or the like, and an ultrasonic sensor that detects IPA of liquid using ultrasonic waves.
In the processing example of FIG. 14 described above, both the substrate W and the hot plate 6 are inclined to move the IPA liquid film 111 toward the side of the substrate W in the organic solvent removal step (S7). I changed my posture. Instead of this method, a guide member (guide pin or guide ring) having a guide surface is provided so as to face the peripheral edge of the substrate, and the guide member is placed inside the substrate W in the organic solvent removal step (S7). The guide surface of the guide member may be brought into contact with the liquid film 111 of the IPA that is floating. Since the magnitude of the frictional force generated between the upper surface of the substrate W and the IPA liquid film 111 is substantially zero, the liquid of the IPA floating due to the contact between the guide surface of the guide member and the liquid film 111 of the IPA. The film 111 is guided to the side of the substrate W along the guiding surface while maintaining the liquid mass state (without being divided into a large number of droplets). Thus, the IPA liquid film 111 can be completely removed from above the substrate W. When such a method is employed, both the substrate W and the hot plate 6 can be maintained in a horizontal posture in the organic solvent removal step (S7).

In this case, the second feature abnormality detection step (step S34 in FIG. 19) is executed in parallel with the organic solvent exclusion step (S7).
Further, in the organic solvent removal step (S7), instead of the method of changing the posture of both the substrate W and the hot plate 6 to the inclined posture, the nitrogen gas valve 52 is opened and nitrogen gas is discharged from the nitrogen gas discharge port 51. Gas may be blown onto the upper surface of the substrate W toward the center. As a result, a small-diameter circular dry region is formed at the center of the IPA liquid film 111 that is floating. Since the magnitude of the frictional force generated between the upper surface of the substrate W and the IPA liquid film 111 is substantially zero, the discharge region expands with the discharge of nitrogen gas from the nitrogen gas discharge port 51, Since the drying region 82 extends over the entire upper surface of the substrate W, the floating liquid film 111 of the IPA maintains the liquid mass state (without being divided into a large number of droplets), and the side of the substrate W To be guided to. Thus, the IPA liquid film 111 can be completely removed from above the substrate W.

Also in this case, the second feature abnormality detecting step (step S34 in FIG. 19) is executed in parallel with the organic solvent removing step (S7).
In this case, the presence or absence of a dry region formed in the central portion of the IPA liquid film 111 may be detected by detecting the in-plane situation using the visual sensor 8.
Further, in the organic solvent removal step (S7), the guide member is moved inward of the substrate W, and the nitrogen gas is centered on the upper surface of the substrate W in parallel with the inclination of the hot plate 6 (substrate W). You may spray on the part. In this case, by detecting the in-plane situation using the visual sensor 8, the generation of the dry region formed in the central portion of the IPA liquid film 111 may be detected, and further, the generation of the dry region may be detected. In response to this, the movement of the guide member or the inclination of the hot plate 6 (substrate W) may be started.

In the above-described embodiment, the liquid level detection process (step S23 in FIG. 17 and step S28 in FIG. 18) is performed in parallel with both the organic solvent replacement process (S5) and the substrate temperature increasing process (S6). Although it demonstrated as what is performed, a liquid level detection process may be performed in parallel with only a board | substrate high temperature process (S6).
In addition, the liquid level detection process (step S23 in FIG. 17 and step S28 in FIG. 18) has been described as being performed in parallel with the organic solvent replacement process (S5) and the substrate temperature increasing process (S6). The liquid level detection step may be executed in parallel with the organic solvent exclusion step (S7).

  Further, in parallel with the substrate high temperature process (S6) and the organic solvent removal process (S7), the in-plane state of the IPA is detected by the visual sensor 8 (step S29 in FIG. 18, step S34 in FIG. 19). As described above, the detection of the in-plane state of IPA by the visual sensor 8 may be executed in parallel with the organic solvent replacement step (S5). In this case, the visual sensor 8 may detect whether or not the IPA liquid film on the upper surface of the substrate W covers the entire area of the substrate W (whether it is covered).

Further, the visual sensor 8 including the camera 81 is employed as the in-plane situation detection means. For example, a plurality of displacement sensors are arranged above the substrate W along the upper surface of the substrate. The in-plane state of the IPA on the upper surface of the substrate W may be detected by detecting the liquid level height of the IPA at the portion facing the displacement sensor.
Further, when the crack 113 generated in the IPA liquid film 111 is detected in the substrate temperature increasing step (S6), heating to the substrate W may be stopped, or the heat generation temperature of the hot plate 6 may be lowered. .

  Further, in the substrate high temperature process (S6), when the IPA liquid film 111 cannot be detected even after a predetermined period from the start of the substrate high temperature process (S6) (NO in step S32 of FIG. 18). ), The control device 3 may treat it as an error of insufficient heating (not floating). In this case, the control device 3 may raise the heat generation temperature of the hot plate 6 more than before.

Moreover, although the case where the substrate processing apparatus 1 includes both the liquid level sensor 7 and the in-plane condition detection means such as the visual sensor 8 has been described as an example, only one of them is detected. Also good.
In the above-described embodiment, the configuration in which the substrate W is transferred between the hot plate 6 and the substrate holding and rotating unit 5 by moving the hot plate 6 up and down has been described as an example. Alternatively, the hot plate 6 and the substrate W may be transferred by raising and lowering both the hot plate 6 and the substrate holding and rotating unit 5.

  In the above-described embodiment, it has been described that the substrate W is heated in a state where the substrate W is placed on the hot plate 6 in the substrate temperature increasing step (S6). However, in the substrate temperature increasing step (S6), The substrate W may be heated by disposing the hot plate 6 close to the lower surface of the substrate W held by the substrate holding / rotating unit 5. In this case, the amount of heat given to the substrate W can be adjusted by changing the distance between the hot plate 6 and the substrate W.

In addition, although IPA has been described as an example of the organic solvent having a surface tension lower than that of water, for example, methanol, ethanol, acetone, HFE (hydrofluoroether), and the like can be employed in addition to IPA.
Further, instead of using one type of chemical solution, the substrate W may be processed using a plurality of types (two types) of chemical solution.

  Moreover, although the chemical | medical solution process (etching process, washing | cleaning process, etc.) of embodiment mentioned above was performed under atmospheric pressure, the pressure of process atmosphere is not restricted to this. For example, the atmosphere of the sealed space defined by the lid member 39 and the lower cup 37 is pressurized and depressurized using a predetermined pressure adjusting means, thereby obtaining a high-pressure atmosphere higher than atmospheric pressure or a reduced-pressure atmosphere lower than atmospheric pressure. The etching process and the cleaning process of each embodiment may be performed on the above.

DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 3 Control apparatus 5 Substrate holding | maintenance rotation unit 6 Hot plate (substrate heating means)
7 Liquid level sensor (Liquid level detection means)
8 Visual sensor (in-plane situation detection means)
45 Organic solvent piping (organic solvent supply means)
50 Organic solvent valve (Organic solvent supply means)
81 Camera 82 Image processing unit 111 IPA liquid film (organic solvent liquid film)
112 Evaporated gas film of IPA (evaporated gas film of organic solvent)
LV1 first height level (height position)
LV2 Second height level (height position)
TE1 Predetermined temperature W Substrate

Claims (14)

An organic solvent supply means for supplying an organic solvent having a surface tension lower than that of water to the upper surface of the horizontally held substrate;
Substrate heating means for heating the organic solvent on the upper surface of the substrate by increasing the temperature of the substrate;
An organic solvent removing means for removing the organic solvent from the upper surface of the substrate;
An in-plane condition detecting means for detecting an in-plane condition of the organic solvent on the upper surface of the substrate;
And a control unit that executes predetermined control based on the in-plane state of the organic solvent detected by the in-plane state detection unit. The in-plane state detection means, in parallel with the heating of the substrate by the substrate heating unit, detects the in-plane state of the organic solvent in said top surface of said substrate,
Said control means, based on a signal from the in-plane state detection means, the form of the organic solvent liquid film of said top surface of said substrate is determined whether an abnormality, if it is determined that the abnormal The substrate processing apparatus according to claim 1, wherein predetermined error processing is performed. The in-plane condition detection means detects the in-plane condition of the organic solvent on the upper surface of the substrate in parallel with the heating of the organic solvent by the substrate heating means,
3. The substrate processing apparatus according to claim 1, wherein when the control unit determines that a crack has occurred in the liquid film of the organic solvent, the control unit performs control to stop heating of the organic solvent by the substrate heating unit. .   The in-plane situation detection means detects the in-plane situation of the organic solvent on the upper surface of the substrate in parallel with the removal of the organic solvent by the organic solvent exclusion means,
  A predetermined error process is performed when the control unit determines that there is a remaining droplet of the organic solvent on the upper surface of the substrate based on a signal from the in-plane state detection unit. The substrate processing apparatus as described in any one of these. An organic solvent supply means for supplying an organic solvent having a surface tension lower than that of water to the upper surface of the horizontally held substrate;
Substrate heating means for heating the organic solvent on the upper surface of the substrate by increasing the temperature of the substrate;
An organic solvent removing means for removing the organic solvent from the upper surface of the substrate;
A liquid level detecting means for detecting the liquid level of the organic solvent liquid film is formed to cover the upper surface of the substrate,
Control means for controlling one of the organic solvent supply means and the organic solvent exclusion means based on the liquid level height of the liquid film of the organic solvent detected by the liquid level detection means. Substrate processing equipment. It said control means, based on a signal from the liquid level height detection means, liquid level of the liquid film of the organic solvent, it is determined whether or not reached a predetermined height, claim 5. The substrate processing apparatus according to 5 . The liquid surface height detection means, wherein an organic solvent supply means in parallel with the supply of organic solvent, to detect the liquid level of the organic solvent in said top surface of said substrate,
Wherein, when the liquid level of the liquid film of the organic solvent is determined to reach a predetermined height position, wherein an organic solvent supply means stops the supply of the organic solvent, according to claim 5 or 6 2. The substrate processing apparatus according to 1. An organic solvent supplying step of supplying an organic solvent having a surface tension lower than that of water to the upper surface of the horizontally held substrate;
A substrate heating step of heating the organic solvent on the upper surface of the substrate by increasing the temperature of the substrate;
An organic solvent removal step of removing the organic solvent from the upper surface of the substrate ;
In the upper surface of the front Stories substrate, a plane condition detecting step of detecting a face within the context of the organic solvent,
And a step of performing a predetermined operation based on the detected in-plane condition of the organic solvent . The plane condition detection step, in parallel with the substrate heating step includes the step of detecting a face within the context of the organic solvent in said top surface of said substrate,
The substrate processing method according to claim 8, further comprising a step of performing a predetermined error processing when the form of the liquid film of the organic solvent is abnormal.   The in-plane situation detection step includes a step of detecting an in-plane situation of the organic solvent on the upper surface of the substrate in parallel with the substrate heating step,
  The substrate processing method according to claim 8 or 9, further comprising a step of stopping heating of the organic solvent in the substrate heating step when a crack occurs in the liquid film of the organic solvent.   The in-plane situation detection step includes a step of detecting an in-plane situation of the organic solvent on the upper surface of the substrate in parallel with the organic solvent exclusion step,
  11. The method according to claim 8, further comprising a step of performing a predetermined error process when there is a remaining droplet of the organic solvent on the upper surface of the substrate in the in-plane state detection step. Substrate processing method.   An organic solvent supplying step of supplying an organic solvent having a surface tension lower than that of water to the upper surface of the horizontally held substrate;
  A substrate heating step of heating the organic solvent on the upper surface of the substrate by increasing the temperature of the substrate;
  An organic solvent removal step of removing the organic solvent from the upper surface of the substrate;
  A liquid level detection step for detecting a liquid level height of the liquid film of the organic solvent formed so as to cover the upper surface of the substrate,
  One of the said organic-solvent supply process and the said organic-solvent exclusion process is a substrate processing method performed based on the liquid level height of the said liquid film of the detected said organic solvent.   The liquid level detection step is performed in parallel with the organic solvent supply step,
  The substrate processing method according to claim 12, wherein the organic solvent supply step is terminated when a liquid level of the liquid film of the organic solvent reaches a predetermined height position in the liquid level detection step. . The substrate heating step, the upper surface of the substrate to reach a predetermined temperature higher than the boiling point of the organic solvent, by which, on the upper surface of the substrate, of the organic solvent which is formed so as to cover the upper surface between liquid film and the upper surface of the substrate, with the formation of the evaporation gas film of the organic solvent in the entire of the upper surface, floating the the liquid film of the organic solvent above the evaporation gas film of the organic solvent the substrate processing method according to any one of claims 8-1 3.

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