JP6377021B2 - Al alloy sputtering target - Google Patents

Description

  The present invention relates to an Al alloy sputtering target. In particular, the present invention relates to an Al alloy sputtering target capable of forming an Al alloy thin film at a high deposition rate.

  One method for improving the productivity of a display device such as a touch panel, such as a liquid crystal display, is to form a thin film quickly when forming the wiring film of, for example, a lead wiring film and a touch panel sensor constituting the touch panel. It is done. When a thin film is formed by a sputtering method, the film formation rate can be increased by increasing the sputtering power, that is, the electric power. However, when the sputtering power is increased, film formation abnormalities such as arcing and splash are likely to occur, and problems such as a decrease in the yield of touch panels and the like occur. Therefore, a sputtering target that can increase the deposition rate without increasing the sputtering power is desired.

  By the way, an Al—Nd alloy thin film having both low electrical resistivity and high heat resistance is used for the wiring film of the liquid crystal display. A sputtering method is employed as a method for forming the Al—Nd alloy thin film, and an Al—Nd alloy sputtering target is used as a raw material for forming the thin film. As the Al—Nd alloy sputtering target, the techniques of the following Patent Documents 1 to 5 have been proposed so far.

  Patent Document 1 shows that an Al alloy film excellent in alkali corrosion resistance for display devices can be provided by reducing the Fe content of an Al-based alloy sputtering target. Patent Document 2 shows that an Al alloy film such as a liquid crystal having excellent film uniformity can be produced by reducing variations in the Vickers hardness of the surface of the Al alloy sputtering target.

  Patent Document 3 shows that an Al alloy electrode of a thermal printer excellent in heat resistance, void resistance, hillock resistance, and the like can be formed by using an Al-based alloy sputtering target having a predetermined alloy composition. Further, in Patent Document 4, by using an Al—Nd alloy sputtering target having a predetermined alloy composition, generation of hillocks after annealing of the Al—Nd alloy thin film of the conductive part for liquid crystal display can be suppressed, and the resistance value can be reduced. It has been shown that it can be reduced.

  Patent Document 5 shows that by using an Al—Nd alloy sputtering target with a reduced oxygen content, generation of hillocks in an alloy thin film constituting an electrode for a liquid crystal display can be suppressed and a specific resistance value can be reduced. Yes.

JP 2012-132091 A JP 2004-204284 A JP 2003-103821 A JP 2001-125123 A JP 2001-93862 A

  As described above, Patent Documents 1 to 5 show that the component composition of the sputtering target is controlled in order to improve the characteristics of the film to be formed. The problem of improving the property is not listed, and no means for solving this problem is disclosed.

  The present invention has been made in view of the situation as described above, and its purpose is to obtain a higher film formation rate than a conventional Al—Nd alloy sputtering target, and to significantly improve productivity of touch panels and the like. An object of the present invention is to provide an Al—Nd alloy sputtering target that can be produced.

The Al alloy sputtering target of the present invention that has solved the above problems is made of an Al alloy containing Nd of 0.1 atomic% to 3 atomic%, and X-ray diffraction of the Al (200) plane in the X-ray diffraction pattern. The peak intensity, the X-ray diffraction peak intensity of the Al (311) plane, the X-ray diffraction peak intensity of the Al (220) plane, and the X-ray diffraction peak intensity of the Al (111) plane satisfy the relationship of the following formula (1): And it has a summary in the place where Vickers hardness Hv satisfies 29 or more and 36 or less.
I _{Al (200)} > I _{Al (311)} > I _{Al (220)} > I _{Al (111)} (1)
In the formula, I _{Al (200)} represents the X-ray diffraction peak intensity of the Al (200) plane, I _{Al (311)} represents the X-ray diffraction peak intensity of the Al (311) plane, and I _{Al (220)} represents Al (220 ) Plane X-ray diffraction peak intensity, and I _{Al (111)} represents the X-ray diffraction peak intensity of the Al (111) plane.

  In a preferred embodiment of the present invention, the Al alloy sputtering target has an average crystal grain size of 10 μm to 100 μm.

  In a preferred embodiment of the present invention, the Al alloy sputtering target is used for forming a lead wiring film for a touch panel and a wiring film for a touch panel sensor.

  According to the present invention, since the X-ray diffraction peak intensity and Vickers hardness of the Al—Nd alloy sputtering target are controlled in particular, when the sputtering target is used for forming an Al—Nd alloy thin film, the film formation rate Can be increased sufficiently. As a result, productivity of a touch panel or the like using the thin film as, for example, a lead wiring film or a wiring film of a touch panel sensor can be significantly improved.

FIG. 1 shows an example of X-ray diffraction peak intensities of the Al (111), (200), (220), and (311) planes of the Al alloy sputtering target of the present invention.

Under the above-mentioned problems, the inventor has intensively studied to provide an Al—Nd alloy sputtering target capable of forming an Al—Nd alloy thin film at high speed. As a result, the X-ray diffraction peak intensities of the Al (200) plane, Al (311) plane, Al (220) plane, and Al (111) plane of the sputtering surface of the Al—Nd alloy sputtering target having the component composition described later are obtained. It has been found that the Al—Nd alloy sputtering target can be realized by controlling to satisfy the relationship of the following formula (1) and controlling the Vickers hardness to 29 or more and 36 or less.
I _{Al (200)} > I _{Al (311)} > I _{Al (220)} > I _{Al (111)} (1)
In the formula, I _{Al (200)} represents the X-ray diffraction peak intensity of the Al (200) plane, I _{Al (311)} represents the X-ray diffraction peak intensity of the Al (311) plane, and I _{Al (220)} represents Al (220 ) Plane X-ray diffraction peak intensity, and I _{Al (111)} represents the X-ray diffraction peak intensity of the Al (111) plane.

  Furthermore, the present inventors have found that the film formation rate can be further increased by controlling the average crystal grain size of the Al—Nd alloy sputtering target to preferably 10 μm or more and 100 μm or less, thereby completing the present invention.

  In this specification, the characteristic that an Al—Nd alloy thin film can be formed at a high speed is sometimes referred to as “having a high film formation speed”.

  The present invention will be described in detail below.

First, the X-ray diffraction pattern of the Al—Nd alloy sputtering target will be described. The present invention is characterized in that the magnitude relationship between the X-ray diffraction peak intensities satisfies I _{Al (200)} > I _{Al (311)} > I _{Al (220)} > I _{Al (111)} .

The history of finding that a high film formation rate can be realized by satisfying the magnitude relationship of the X-ray diffraction peak intensity is as follows.
(A) It has been known that the collision energy of Ar ions during sputtering is efficiently transmitted in a direction in which the degree of filling of atoms on a metal crystal plane is high.
(B) In particular, the crystal plane of Al is in the order of (200) plane, (311) plane, (220) plane, and (111) plane, and the degree of atomic filling in the normal direction of the crystal plane is high. In addition, it has been known that the collision energy is more easily transmitted efficiently.
(C) However, when an Al-based alloy sputtering target is targeted, for example, in a Si-containing Al-based sputtering target, there is a technique for improving the film formation rate by increasing the ratio of <111> crystal orientations. Also, there has been a technique in which a lower ratio of <111> crystal orientation is better. As described above, there are many unclear parts regarding the relationship between the crystal orientation and the film formation rate. As a result of intensive studies on the relationship between the crystal plane and the film formation rate, the present inventor found that in the Al—Nd alloy sputtering target, the (200) plane with the highest atomic filling degree in the normal direction of the Al crystal plane was (311). It was found that by satisfying the magnitude relationship of the X-ray diffraction peak intensities of the ()) plane, (220) plane, and (111) plane, a large number of sputtered particles are ejected and a high deposition rate can be realized. Note that the magnitude relationship is as follows: in the X-ray diffraction pattern in the X-ray diffraction measurement range 2θ = 30 to 90 °, the (200) plane, (311) plane, (220) among a plurality of peaks including the (222) plane. ) Plane and (111) plane are selected and X-ray diffraction peak intensities are compared.

  Next, the Vickers hardness Hv of the Al—Nd alloy sputtering target will be described. When the Vickers hardness of the Al—Nd alloy sputtering target exceeds 36, the collision energy of Ar ions at the time of sputtering is not efficiently propagated, and the sputtered particles are difficult to be ejected from the sputtering target, so that a high film forming speed cannot be obtained. . Therefore, in this invention, the upper limit of Vickers hardness shall be 36 or less. The upper limit of the Vickers hardness is preferably 35 or less, more preferably 34 or less, and still more preferably 33 or less.

  However, even if the Vickers hardness is less than 29 and is too low, the collision energy of Ar ions at the time of sputtering is not efficiently propagated, and the sputtered particles are difficult to be ejected from the sputtering target, so that it is difficult to obtain a high deposition rate. Therefore, the lower limit of the Vickers hardness is 29 or more. The lower limit of the Vickers hardness is preferably 30 or more, more preferably 31 or more.

  The average crystal grain size of the Al—Nd alloy sputtering target is preferably 10 μm or more and 100 μm or less from the viewpoint of securing an excellent high film formation rate. If it is less than 10 μm, the collision energy of Ar ions during sputtering is not efficiently propagated, and sputtered particles are difficult to be ejected from the sputtering target. As a result, since a high film formation rate may not be obtained, 10 μm or more is preferable as described above. The lower limit of the average crystal grain size is more preferably 20 μm or more, further preferably 30 μm or more, and even more preferably 40 μm or more.

  On the other hand, even if the average crystal grain size becomes too large and exceeds 100 μm, the collision energy of Ar ions during sputtering is not efficiently propagated, and the sputtered particles are not easily ejected from the sputtering target. As a result, it is difficult to obtain a high deposition rate, and therefore, 100 μm or less is preferable as described above. The upper limit of the average crystal grain size is more preferably 90 μm or less, still more preferably 80 μm or less.

The average crystal grain size is determined as follows. An optical micrograph of the sputtering surface of the Al—Nd alloy sputtering target is taken. The larger the microscope magnification, the more accurately the crystal grain size can be obtained, and it is usually set to about 100 to 500 times. Next, draw four or more straight lines in a cross pattern on the obtained photo. Note that the larger the number of straight lines, the more accurately the crystal grain size can be obtained. The number n of crystal grain boundaries on the straight line is examined, and the crystal grain size d is calculated based on the following formula for each straight line. Thereafter, the average value of the crystal grain sizes d obtained from each of the plurality of straight lines is set as the average crystal grain size of the sputtering target.
d (unit: μm) = L / n / m
In the formula, L represents the length L of the straight line, n represents the number n of crystal grain boundaries on the straight line, and m represents the magnification of the optical micrograph.

  Next, the component composition of the Al—Nd alloy sputtering target according to the present invention and the reason for the limitation will be described.

  The sputtering target of the present invention is made of an Al alloy containing at least 0.1% and not more than 3% of Nd in atomic%. Hereinafter, “%” means “atomic%” for chemical components.

[Nd: 0.1% to 3%]
Nd is an element that prevents generation of hillocks and is useful for improving heat resistance. When the content in the Al alloy is less than 0.1%, an Al alloy thin film having high heat resistance cannot be formed. Therefore, the lower limit of the Nd content is 0.1% or more. The lower limit of the Nd content is preferably 0.15% or more, more preferably 0.20% or more. On the other hand, when the Nd content exceeds 3%, an Al alloy thin film having a low electrical resistivity cannot be formed. Therefore, the upper limit of the Nd content is 3% or less. The upper limit of the Nd content is preferably 2% or less, more preferably 1% or less.

  The contained elements specified in the present invention are as described above, and the balance is Al and inevitable impurities. As an unavoidable impurity, an element such as Fe, Si, Cu, C, O, N or the like introduced from raw materials, materials, manufacturing equipment, etc. can be allowed to be mixed.

  As described above, the Al—Nd alloy sputtering target may be an Al alloy sputtering target consisting essentially of only Al and Nd. However, the Al—Nd alloy sputtering target may contain the following elements as long as the present invention is not adversely affected. good.

[Ti: 0.0005% to 0.01%]
Ti is an effective element for refining Al crystal grains. In order to effectively exhibit such an effect, the lower limit of the Ti content is preferably 0.0005% or more, more preferably 0.0010% or more. However, when the Ti content is excessive, an Al alloy thin film having a low electrical resistivity cannot be formed. Therefore, the upper limit of the Ti content is preferably 0.01% or less, more preferably 0.005% or less.

[B: 0.0005% to 0.01%]
B is an element effective for refining Al crystal grains. In order to effectively exhibit such an effect, the lower limit of the B content is preferably 0.0005% or more, more preferably 0.0010% or more. However, when the B content is excessive, an Al alloy thin film having a low electrical resistivity cannot be formed. Therefore, the upper limit of the B content is preferably 0.01% or less, more preferably 0.005% or less.

  The shape of the sputtering target is not particularly limited, and can be various known shapes such as a flat plate shape such as a disk or a square plate, or a cylindrical shape. For example, it can be a disk shape. Such a disk-shaped sputtering target is formed by, for example, round-cutting a cylindrical forged body in which the metal structure and Nd distribution are made uniform by forging and heat treatment; and the metal structure and Nd distribution are made uniform by rolling and heat treatment. A flat rolled body is rounded; or a flat rolled body with a uniform metal structure and Nd distribution is rounded by forging, rolling, and heat treatment; The system thin film can be formed continuously and stably.

  The Al—Nd alloy sputtering target of the present invention is preferably used for forming a lead-out wiring film for a touch panel and a wiring film for a touch panel sensor, which are required to improve productivity, particularly at a high film formation rate. By using the lead-out wiring film and the wiring film of the touch panel sensor, productivity of the touch panel can be remarkably improved.

  Next, a method for producing the Al—Nd alloy sputtering target will be described. In the Al—Nd alloy sputtering target of the present invention, Al material and Nd material are dissolved in the atmosphere, cast, and then subjected to at least one plastic working among forging and rolling, heat treatment, machining, and as necessary. It can be manufactured by bonding the backing plate.

  For example, the Al—Nd alloy sputtering target of the present invention can be manufactured under the following conditions.

  An Al material and an Nd material are dissolved in the atmosphere, and an ingot having a thickness of 150 to 180 mm is ingoted by a DC (Direct Chill Casting) casting method, and then cold forging and hot rolling are performed and annealing is performed. Next, mechanical processing such as rounding and lathe processing may be performed to manufacture an Al—Nd alloy sputtering target.

  Among these, in order to ensure the X-ray diffraction pattern and the Vickers hardness of the above formula (1), the upper limit and lower limit of the heating temperature and reduction ratio of the hot rolling and the upper limit and lower limit of the heating temperature of annealing are shown below. It is important to control within the range. Hereinafter, processes after cold forging will be described in detail.

Cold forging rate: 30-50%
If the processing rate of cold forging is too low, an average crystal grain size of 10 μm or more and 100 μm or less cannot be obtained. Therefore, the lower limit of the cold forging rate is preferably 30% or more, more preferably 35% or more. On the other hand, when the cold forging rate is too high, breakage such as cracking occurs. Therefore, the upper limit of the cold forging rate is preferably 50% or less, more preferably 45% or less.

In addition, the processing rate of cold forging is calculated | required by a following formula.
Processing rate (%) = 100 × (thickness before start of cold forging−thickness after completion of cold forging) / thickness before start of cold forging

Hot rolling heating temperature: 350-450 ° C
When the heating temperature of the hot rolling is lower than 350 ° C., the intensity of the X-ray diffraction peak on the Al (200) plane becomes small and the X-ray diffraction pattern of the above formula (1) cannot be obtained. Therefore, the lower limit of the heating temperature for hot rolling is 350 ° C. or higher. The lower limit of the heating temperature for hot rolling is preferably 370 ° C. or higher. On the other hand, when the heating temperature of the hot rolling exceeds 450 ° C., the X-ray diffraction peak intensity of the Al (111) surface increases, and the X-ray diffraction pattern of the above formula (1) cannot be obtained. Therefore, the upper limit of the heating temperature of hot rolling is set to 450 ° C. or less. The upper limit of the heating temperature for hot rolling is preferably 430 ° C. or lower.

Hot rolling reduction: 75-95%
When the rolling reduction of the hot rolling is less than 75%, the X-ray diffraction peak intensity of the Al (200) plane becomes small and the X-ray diffraction pattern of the above formula (1) cannot be obtained. Therefore, the lower limit of the hot rolling reduction is 75% or more. The lower limit of the hot rolling reduction is preferably 77% or more. On the other hand, when the rolling reduction of hot rolling exceeds 95%, breakage such as cracking occurs. Therefore, the upper limit of the hot rolling reduction is 95% or less. The upper limit of the hot rolling reduction is preferably 90% or less.

In addition, the rolling reduction of hot rolling is calculated | required by a following formula.
Reduction ratio (%) = 100 × (thickness before starting rolling−thickness after rolling) / thickness before starting rolling

Heating temperature for annealing: 350-450 ° C
When the annealing heating temperature is lower than 350 ° C., the average crystal grain size becomes too small and the Vickers hardness becomes too high. Therefore, the lower limit of the annealing heating temperature is 350 ° C. or higher. The lower limit of the heating temperature for annealing is preferably 370 ° C. or higher. On the other hand, if the heating temperature for annealing exceeds 450 ° C., the average crystal grain size becomes too large and the Vickers hardness becomes too low. Therefore, the upper limit of the heating temperature for annealing is preferably 450 ° C. or lower, more preferably 430 ° C. or lower.

Heating time for annealing: 1.0 hour or more and less than 3.0 hours If the heating time for annealing is too short, the average crystal grain size of the Al—Nd alloy sputtering target becomes too small and the Vickers hardness becomes too high. Therefore, the lower limit of the heating time for annealing is preferably 1.0 hour or longer, more preferably 1.2 hours or longer. On the other hand, if the heating time for annealing is too long, the average crystal grain size of the Al—Nd alloy sputtering target becomes too large and the Vickers hardness becomes too low. Therefore, the upper limit of the heating time for annealing is preferably less than 3.0 hours, more preferably 2.8 hours or less.

  The present invention will be described in further detail with reference to the following examples. However, the following examples are not intended to limit the present invention, and modifications and implementations without departing from the spirit of the present invention are all included in the technical scope of the present invention. Is done.

[Production of Al-Nd alloy sputtering target]
First, a method for producing an Al—Nd alloy sputtering target will be described.

The following Al and Nd materials are prepared as raw materials.
(1) Al material: Al with a purity of 99.99 atomic%
(2) Nd material: Nd with a purity of 99.5 atomic%

  Using the above materials, a square plate-shaped ingot having a width of 300 mm, a length of 350 mm, and a thickness of 65 mm was formed by DC melting. Thereafter, cold forging was performed under the condition of a processing rate of 38% to obtain a rectangular plate-shaped forged body having a width of 380 mm, a length of 450 mm, and a thickness of 40 mm. Next, hot rolling was performed under the conditions shown in Table 1, and a hot rolled sheet having a width of 400 mm and a thickness shown in Table 1 was obtained. Thereafter, annealing was performed. In addition, No. As for No. 3, since the rolling reduction of the hot rolling was high and the rolled sheet was cracked, it was not possible to proceed to the subsequent process, and the subsequent test was not performed.

  Next, the rolled plate was cut, rounded, and turned. Specifically, grinding is performed from the surface layer part of one side to 0.5 mm in the thickness direction of the cut and rounded rolled plate, and a total of 1.0 mm is ground on both sides. Lathe processing was performed so that In this manner, a disk-shaped Al—Nd alloy sputtering target having a diameter of 101.6 mm × thickness of 5.0 mm was manufactured. The amount of Nd in the sputtering target thus obtained was analyzed by inductively coupled plasma (ICP) emission spectroscopy.

  The physical properties of the sputtering target having a thickness of 5.0 mm obtained above were determined according to the following method.

[X-ray diffraction peak intensity]
Any four locations on the target surface of the sputtering target were analyzed by X-ray diffraction under the conditions shown below, and X-ray diffraction of the (111), (200), (220), and (311) planes of Al The peak intensity, more specifically, the integrated intensity, was measured by CPS (counts per second). The magnitude relationship between these values was evaluated. As an example, No. in Table 1 which is an example of the present invention. The result of 5 is shown in FIG. In addition, although it analyzed about 4 places as above-mentioned, the magnitude relationship of the said X-ray-diffraction peak intensity of the said 4 places was the same also in any target.

X-ray diffraction conditions a) Pretreatment of test piece In this experimental example, since the surface of the test piece was smooth, no pretreatment was performed. In addition, when it is desired to remove the influence of the cutting strain on the surface of the test piece, it is preferable to etch the surface with dilute nitric acid after wet polishing as a pretreatment of the test piece.
b) “RINT 1500” manufactured by Rigaku Denki Co., Ltd.
c) Analysis condition target: Cu
Monochrome: CuKα target output using a monochromator: 40 kV-200 mA
Slit: Divergence 1 °, scattering 1 °, light receiving 0.15mm
Scanning speed: 4 ° / min
Sampling width: 0.02 ° Measurement range (2θ): 30-90 °

[Vickers hardness]
The Vickers hardness Hv of each sputtering target was measured using a Vickers hardness tester (manufactured by Akashi Seisakusho Co., Ltd., AVK-G2) at a load of 1 kgf.

[Average crystal grain size]
An optical microscope photograph of the sputtering surface of the sputtering target was taken, and four cross-shaped straight lines were drawn on the obtained photograph. The number n of crystal grain boundaries on the straight line was examined, and the crystal grain size d was calculated based on the following formula for each straight line.

d (unit: μm) = L / n / m
In the formula, L represents the length L of the straight line, n represents the number n of crystal grain boundaries on the straight line, and m represents the magnification of the optical micrograph. The average value of the crystal grain size d obtained from each of the four straight lines was defined as the average crystal grain size (μm).

[Deposition rate]
Using the above Al—Nd alloy sputtering target, the deposition rate of the Al—Nd alloy thin film by DC magnetron sputtering was evaluated. Specifically, using a sputtering apparatus of “Sputtering System HSR-542S” manufactured by Shimadzu Corporation on a glass substrate having a diameter of 50.0 mm × thickness of 0.70 mm, DC magnetron sputtering was performed for 120 seconds. And an Al—Nd alloy film was obtained.

The sputtering conditions are as follows.
Back pressure: 3.0 × 10 ⁻⁶ Torr or less Ar gas pressure: 2.25 × 10 ⁻³ Torr
Ar gas flow rate: 30sccm
Sputtering power: DC260W
Distance between electrodes: 51.6mm
Substrate temperature: room temperature

The film thickness of the formed Al—Nd alloy thin film was measured with a stylus type film thickness meter, and the film formation speed [nm / s] = film thickness [nm] / (film formation time [s] = 120 seconds) The deposition rate was calculated. Judgment was made as follows, and A and B were evaluated as having a high film formation rate, and the case of A was evaluated as being preferable because the film formation rate was higher, and C was evaluated as being rejected because the film formation rate was low. These results are shown in Table 1.
A: Deposition rate 2.0 nm / s or more B ... Deposition rate 1.8 nm / s or more, less than 2.0 nm / s C ... Deposition rate less than 1.8 nm / s

  Table 1 shows the following. No. in Table 1 5, 8, and 11 are examples of the present invention, and the magnitude relationship of the X-ray diffraction peak intensity and the Vickers hardness are appropriately controlled, so that a high film formation rate can be achieved, and the determination is acceptable. Since this Al—Nd alloy sputtering target has a high deposition rate, productivity of a touch panel or the like can be improved.

  In particular, no. Nos. 5 and 11 have a Vickers hardness in a more preferable range and an average crystal grain size in an even more preferable range, so that an extremely excellent high film forming speed can be obtained and the productivity of the touch panel is remarkably improved. It is possible.

  In contrast, No. 1 in Table 1. Since 1, 2, 4, 6, 7, 9, and 10 do not satisfy any of the requirements of the present invention, a high film formation rate was not obtained.

  No. in Table 1 1 is a comparative example in which the average crystal grain size is small and the Vickers hardness is high because the heating temperature for annealing is low, and a high film formation rate cannot be obtained, and the determination is unacceptable.

  No. 2 is a comparative example in which the magnitude relation of the X-ray diffraction peak intensity is not appropriately controlled because the rolling reduction of hot rolling is low, and a high film formation rate cannot be obtained, and the determination is unacceptable.

  No. No. 4 is a comparative example in which the average crystal grain size is large and the Vickers hardness is low because the annealing heating temperature is high, and a high film formation rate cannot be obtained, and the determination is unacceptable.

  No. No. 6 is a comparative example in which the magnitude relation of the X-ray diffraction peak intensity is not appropriately controlled because the heating temperature of hot rolling is low, and a high film formation rate cannot be obtained, and the determination is unacceptable.

  No. No. 7 is a comparative example in which the magnitude relationship of the X-ray diffraction peak intensity is not appropriately controlled because the heating temperature of hot rolling is high, and a high film formation rate cannot be obtained, and the determination is unacceptable.

  No. No. 9 is a comparative example in which the average crystal grain size is small and the Vickers hardness is high because the heating time for annealing is short, and a high film formation rate cannot be obtained, and the determination is unacceptable.

  No. No. 10 is a comparative example in which the average crystal grain size is large and the Vickers hardness is low because the heating time for annealing is long, and a high film formation rate cannot be obtained, and the determination is unacceptable.

  No. No. 3 had a high rolling reduction ratio as described above, and therefore cracks occurred in the rolled sheet.

  Since the Al alloy sputtering target of the present invention has a high deposition rate as described above, the productivity of a display device such as a touch panel can be significantly improved.

Claims (3)

The Nd containing 3 atom% 0.1 atom% or more, the remaining portion is an Al alloy sputtering target made of an Al alloy is Al and inevitable impurities,
X-ray diffraction peak intensity of the Al (200) plane, X-ray diffraction peak intensity of the Al (311) plane, X-ray diffraction peak intensity of the Al (220) plane, and X of the Al (111) plane in the X-ray diffraction pattern The line diffraction peak intensity satisfies the relationship of the following formula (1), and
An Al alloy sputtering target having a Vickers hardness Hv of 29 or more and 36 or less.
I _{Al (200)} > I _{Al (311)} > I _{Al (220)} > I _{Al (111)} (1)
In the formula, I _{Al (200)} represents the X-ray diffraction peak intensity of the Al (200) plane, I _{Al (311)} represents the X-ray diffraction peak intensity of the Al (311) plane, and I _{Al (220)} represents Al (220 ) Plane X-ray diffraction peak intensity, and I _{Al (111)} represents the X-ray diffraction peak intensity of the Al (111) plane.   The Al alloy sputtering target according to claim 1, wherein the average crystal grain size is 10 μm or more and 100 μm or less.   The Al alloy sputtering target according to claim 1, which is used for forming a lead wiring film of a touch panel and a wiring film of a touch panel sensor.