JP6353240B2 - Substrate processing apparatus and substrate processing method - Google Patents

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method.

  The semiconductor device manufacturing process includes, for example, a process of locally injecting impurities (ions) such as phosphorus, arsenic, and boron into the main surface of the substrate. In this step, the surface of the substrate is masked with a resist in order to prevent ion implantation into unnecessary portions. Since the resist patterned on the surface of the substrate becomes unnecessary after the ion implantation, a resist removing process for removing the unnecessary resist on the surface of the substrate is performed after the ion implantation.

  As such a resist removal process, an SPM solution is supplied to the surface of the substrate, the SPM solution is heated by infrared irradiation, and the resist is removed from the substrate surface by the strong oxidizing power of peroxomonosulfuric acid (H2SO5) contained in the SPM solution. A technique for peeling the film is known.

  For example, in the apparatus described in Patent Document 1, high-temperature SPM liquid is supplied from a peeling liquid supply nozzle to the upper surface of a wafer held and rotated in a horizontal posture by a wafer rotation mechanism, and a heating head scans along the upper surface of the wafer. However, a configuration for irradiating infrared rays toward the wafer is disclosed. As a result, the SPM liquid supplied to the upper surface of the wafer is heated, and the resist removal process for the wafer proceeds.

JP 2013-182957 A

  This type of resist removal process generates a specific atmosphere. Examples of such an atmosphere include fumes generated by a chemical reaction between a resist and an SPM solution, and water vapor generated by evaporation of a pure water component. When the atmosphere diffuses into the processing chamber and adheres to each part in the processing chamber, it may solidify into particles after a certain period of time. Since particles become a source of contamination of the substrate to be processed, it is desired to prevent the diffusion of the atmosphere described above.

  Such a problem is not only a resist removal process using a resist stripping solution such as an SPM solution, but also a common problem in various processes for performing a liquid process on a substrate.

  An object of the present invention is to provide a technique for suppressing diffusion of an atmosphere generated by substrate processing.

A substrate processing apparatus according to a first aspect of the present invention includes a substrate rotating unit that holds a substrate in a horizontal posture in a substrate holding region and rotates the substrate around a vertical axis, and the substrate held by the substrate rotating unit. A nozzle for supplying the processing liquid to the upper main surface of the substrate, a plurality of cover members capable of transitioning between a separated state separated from each other and a coupled state coupled to each other, and displacement of each of the plurality of cover members And a displacement mechanism that performs a state transition between the separated state and the combined state, and in the combined state, the upper space of the substrate holding region is covered with the plurality of cover members combined to form a processing space. On the other hand, in the separated state, the upper space is opened and the processing space is not formed, and in the combined state, the plurality of cover portions are formed on at least a part of the substrate holding region in a horizontal view. There is nonexistent cover the void portion of, before Symbol bound state, the nozzle supplies a treatment liquid into the upper surface of the substrate through the cover gap portion of the plurality of cover members, in the bound state, The nozzle supplies a processing liquid to the upper main surface of the substrate in a state of being in close contact with the plurality of cover members .
A substrate processing apparatus according to a second aspect of the present invention is the substrate processing apparatus according to the first aspect, wherein the plurality of cover members are sealing members that surround the cover gap portion in a horizontal view in the coupled state. In the combined state, the processing liquid is supplied to the main surface of the upper surface of the substrate in a state in which the outer edge of the nozzle and the inner edge of the sealing member are substantially in close contact with each other.
A substrate processing apparatus according to a third aspect of the present invention is the substrate processing apparatus according to the first or second aspect, wherein the plurality of cover members surround the cover gap portion in a horizontal view in the coupled state. An inner diameter is formed in a tapered shape that decreases from above to below, and the nozzle is formed in a tapered shape in which an outer diameter decreases from above to below.

A substrate processing apparatus according to a fourth aspect of the present invention is the substrate processing apparatus according to any one of the first to third aspects, wherein an exhaust port communicating with the processing space is connected to an exhaust source. An exhaust path is further provided, and in the combined state, the exhaust source exhausts the atmosphere of the processing space through the exhaust port and the exhaust path.

A substrate processing apparatus according to a fifth aspect of the present invention is the substrate processing apparatus according to any one of the first to fourth aspects of the present invention, and communicates with the processing space via the cover gap. An air supply path connecting the air supply port and the air supply source, and the air supply source supplies air to the processing space through the air supply path and the air supply port in the coupled state. It is characterized by.

A substrate processing apparatus according to a sixth aspect of the present invention is the substrate processing apparatus according to any one of the first to fifth aspects, wherein a center position of the substrate is located in the cover gap in a horizontal plan view. It is characterized by being.

A substrate processing apparatus according to a seventh aspect of the present invention is the substrate processing apparatus according to any one of the first to sixth aspects, wherein the cover gap portion is the plurality of cover members in the coupled state. It is a hole part surrounded by.

A substrate processing apparatus according to an eighth aspect of the present invention is the substrate processing apparatus according to any one of the first to seventh aspects, wherein the displacement mechanism is held by the substrate rotating unit. The plurality of cover members are displaced along the radial direction.

A substrate processing apparatus according to a ninth aspect of the present invention is the substrate processing apparatus according to any one of the first to eighth aspects, wherein the processing liquid is a mixed solution of sulfuric acid and hydrogen peroxide solution. It is characterized by being.

In the substrate processing method according to the tenth aspect of the present invention, a plurality of cover members capable of transitioning between a separated state separated from each other and a coupled state coupled to each other are avoided, and an upper space of the substrate holding region is avoided. The substrate is brought into the separated state and the substrate is carried into the substrate holding region via the upper space, and the substrate is held in a horizontal posture in the substrate holding region, and the substrate is moved around the vertical axis. A rotating step of rotating; a cover step of covering the upper space by forming the plurality of cover members in the combined state to form a processing space; and a supplying step of supplying a processing liquid from the nozzle to the upper main surface of the substrate And a substrate unloading step of unloading the substrate from the substrate holding region via the upper space, and in the combined state, in a horizontal plane view. Oite, wherein there is non-existent cover the void portion of the at least some of the plurality of cover members of the substrate holding area, before Symbol supplying step, the said nozzle through said cover gap portion of the plurality of cover members The processing liquid is supplied to the upper main surface of the substrate, and in the supplying step, the nozzle supplies the processing liquid to the upper main surface of the substrate while being in close contact with the plurality of cover members in the combined state. Features.
A substrate processing method according to an eleventh aspect of the present invention is the substrate processing method according to the tenth aspect, wherein the plurality of cover members are sealing members that surround the cover gap in the horizontal state in the coupled state. In the supplying step, the processing liquid is supplied to the main surface of the upper surface of the substrate while the outer edge of the nozzle and the inner edge of the sealing member are substantially in close contact with each other in the combined state. .
A substrate processing method according to a twelfth aspect of the present invention is the substrate processing method according to the tenth aspect or the eleventh aspect, wherein the plurality of cover members are the cover gaps in the coupled state when viewed in a horizontal plane. An inner diameter surrounding the nozzle is formed in a tapered shape that decreases from the upper side to the lower side, and the nozzle is formed in a tapered shape that the outer diameter decreases from the upper side to the lower side.

A substrate processing method according to a thirteenth aspect of the present invention is the substrate processing method according to any of the tenth to twelfth aspects , wherein the substrate processing method is performed in parallel with the supplying step, and the atmosphere of the processing space And an exhaust process for exhausting the gas.

A substrate processing method according to a fourteenth aspect of the present invention is the substrate processing method according to any one of the tenth to thirteenth aspects , wherein the substrate processing method is performed in parallel with the supplying step, and the cover gap is formed. And an air supply step for supplying air to the processing space.

In the first aspect and the tenth aspect of the present invention, by displacing the plurality of cover members, a separated state in which the plurality of cover members are separated from each other and a combined state in which the plurality of cover members are coupled to each other State transition can be performed.

  In the coupled state, the upper space of the substrate held by the substrate rotating unit is covered with a plurality of cover members coupled to each other to form a processing space, while in the separated state, the upper space is opened and the processing space is not formed. . Further, in the coupled state, there is a cover gap portion where a plurality of cover members do not exist in at least a part of the substrate holding region in the horizontal plane view.

  When the substrate processing is performed, in the coupled state, the nozzle passes through the cover gap and supplies the processing liquid to the upper main surface of the substrate. For this reason, even if a specific atmosphere (for example, fumes generated by a chemical reaction between the resist and the SPM liquid) occurs in the processing, the atmosphere leaks from the processing space due to the plurality of cover members being in a combined state. Diffusing into the processing chamber is suppressed.

In the fourth aspect and the thirteenth aspect of the present invention, in the coupled state, the exhaust source exhausts the atmosphere of the processing space through the exhaust port and the exhaust path. For this reason, even if the atmosphere is generated in the processing space, the atmosphere is prevented from diffusing into the processing chamber.

In the fifth aspect and the fourteenth aspect of the present invention, the process space is supplied with air through the cover gap in the combined state. For this reason, even if the atmosphere is generated in the processing space, the atmosphere is prevented from leaking from the cover gap in the processing space and diffusing into the processing chamber.

It is a figure which shows typically the structure of the substrate processing apparatus which concerns on embodiment. It is a perspective view which shows the mode in a process chamber. It is a block diagram which shows the electric constitution of a substrate processing apparatus. It is a flowchart which shows the process example of the resist process of a substrate processing apparatus. It is sectional drawing which shows the mode of a resist process. It is sectional drawing which shows the mode of a resist process. It is sectional drawing which shows the mode of a resist process. It is sectional drawing which shows the mode of a resist process. It is sectional drawing which shows the mode of a resist process. It is sectional drawing which shows the mode of a resist process. It is a top view of the cover member concerning a modification. It is sectional drawing of the cover member concerning a modification. It is a top view of the cover member concerning a modification. It is a top view of the cover member concerning a modification.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

<1 embodiment>
<1.1 Configuration of Substrate Processing Apparatus 1>
FIG. 1 is a diagram schematically showing a configuration of a substrate processing apparatus 1 according to an embodiment of the present invention. The substrate processing apparatus 1 removes an unnecessary resist from the main surface of the wafer W with respect to a substrate (hereinafter referred to as a wafer W) on which one main surface has been subjected to ion implantation processing or dry etching processing. It is a leaf type device.

  The substrate processing apparatus 1 includes a wafer rotating mechanism 3 that holds a wafer W in a horizontal posture so that the main surface is in an upper side in a processing chamber 2 partitioned by a partition (not shown), and a wafer rotating mechanism 3. A stripping solution supply nozzle 4 for supplying a chemical solution (for example, an SPM solution as a resist stripping solution) to the upper main surface (upper surface S1) of the held wafer W, and a cover forming unit 80 are provided.

  In the substrate processing apparatus 1, in a state where the upper space of the wafer W held and rotated by the wafer rotating mechanism 3 is covered by the cover forming unit 80, a high temperature SPM is supplied from the peeling solution supply nozzle 4 to the upper surface S 1 of the rotated wafer W. The liquid is supplied and the resist stripping of the wafer W upper surface S1 is advanced (details will be described later with reference to FIGS. 5 to 10).

<Wafer rotation mechanism 3>
The wafer rotation mechanism 3 (substrate rotation unit) includes a motor 6, a spin shaft 7 integrated with a drive shaft of the motor 6, and a disk-shaped spin base 8 attached horizontally to the upper end of the spin shaft 7. And a plurality of gripping members 9 provided at substantially equiangular intervals along a horizontal plane at a plurality of locations on the peripheral edge of the spin base 8.

  The plurality of gripping members 9 (for example, chuck pins) are members that are driven in conjunction with a link mechanism (not shown) housed in the spin base 8. Therefore, by driving the link mechanism, the state of holding the edge of the wafer W and holding the wafer W in a horizontal posture and the state of releasing the holding of the wafer W in the horizontal posture can be switched. In this specification, a region where the wafer W is held by the plurality of gripping members 9 is referred to as a “substrate holding region”.

  When the motor 6 is driven in a state where the wafer W is held in a horizontal posture by the plurality of holding members 9, the wafer held by the plurality of holding members 9 fixed to the spin base 8 and the spin base 8 by the driving force. W is rotated around the rotation axis C (vertical axis). Note that the manner of holding the wafer W in the wafer rotation mechanism 3 is not limited to the above-described gripping type, but for example, a vacuum suction type of holding the wafer W by vacuum suction of the lower surface of the wafer W. It does not matter.

<Peeling liquid supply nozzle 4>
The stripping liquid supply nozzle 4 is, for example, a straight nozzle that discharges the SPM liquid in a continuous flow state. The stripping liquid supply nozzle 4 is attached to the tip of the first liquid arm 11 extending substantially horizontally with its discharge port directed downward. The first liquid arm 11 is provided so as to be rotatable around a predetermined swing axis extending in the vertical direction. The first liquid arm 11 is coupled to a first liquid arm drive mechanism 12 (nozzle scanning unit) for swinging the first liquid arm 11 within a predetermined angle range and moving the first liquid arm 11 up and down. ing. By the swing of the first liquid arm 11, the stripping liquid supply nozzle 4 is set to a position on the rotation axis C of the wafer W (a position facing the rotation center of the wafer W) and to the side of the wafer rotation mechanism 3. Moved between home positions.

  A stripping solution supply mechanism 13 for supplying the SPM solution to the stripping solution supply nozzle 4 includes a mixing unit 14 for mixing sulfuric acid (H 2 SO 4) and hydrogen peroxide solution (H 2 O 2), and a mixing unit 14 and stripping solution supply. A stripping solution supply pipe 15 connected between the nozzle 4 and the nozzle 4 is provided. A sulfuric acid supply pipe 16 and a hydrogen peroxide solution supply pipe 17 are connected to the mixing unit 14. The sulfuric acid supply pipe 16 is supplied with sulfuric acid whose temperature is adjusted to a predetermined temperature (for example, about 80 ° C.) from the sulfuric acid supply source 16A. On the other hand, the hydrogen peroxide solution supply pipe 17 is supplied with hydrogen peroxide solution of about room temperature (about 25 ° C.) whose temperature is not controlled from the hydrogen peroxide solution supply source 17A. A sulfuric acid valve 18 and a flow rate adjusting valve 19 are interposed in the middle of the sulfuric acid supply pipe 16. A hydrogen peroxide water valve 20 and a flow rate adjusting valve 21 are interposed in the middle of the hydrogen peroxide water supply pipe 17. In the middle of the stripping solution supply pipe 15, a stirring flow pipe 22 and a stripping solution valve 23 are interposed in this order from the mixing section 14 side. The stirring flow pipe 22 includes, for example, a plurality of stirring fins each formed of a rectangular plate with a twist of about 180 degrees about the liquid flow direction in the pipe member around the central axis of the pipe along the liquid flow direction. It has a configuration in which the rotation angles are alternately changed by 90 °.

  When the sulfuric acid valve 18 and the hydrogen peroxide solution valve 20 are opened while the stripping solution valve 23 is opened, the sulfuric acid from the sulfuric acid supply tube 16 and the hydrogen peroxide solution from the hydrogen peroxide solution supply tube 17 are mixed. 14 and flows out from the mixing unit 14 to the stripping solution supply pipe 15. The sulfuric acid and the hydrogen peroxide solution are sufficiently stirred by passing through the stirring flow pipe 22 while flowing through the stripping solution supply pipe 15. By the stirring by the stirring flow pipe 22, the sulfuric acid and the hydrogen peroxide solution sufficiently react to generate an SPM liquid containing a large amount of peroxomonosulfuric acid (H2SO5). The SPM liquid is heated to a temperature higher than the liquid temperature of sulfuric acid supplied to the mixing unit 14 by the reaction heat between sulfuric acid and hydrogen peroxide. The high-temperature SPM liquid is supplied to the peeling liquid supply nozzle 4 through the peeling liquid supply pipe 15.

  Sulfuric acid is stored in the sulfuric acid tank of the sulfuric acid supply source 16A, and the temperature of the sulfuric acid is adjusted to a predetermined temperature (for example, about 120 ° C.) by a temperature controller (not shown) in the sulfuric acid tank. The sulfuric acid heated to the predetermined temperature is supplied to the sulfuric acid supply pipe 16. In the mixing unit 14, sulfuric acid at about 120 ° C. and hydrogen peroxide solution at room temperature are mixed to generate, for example, an SPM liquid at about 160 ° C. The stripping solution supply nozzle 4 discharges about 160 ° C. SPM solution.

<DIW nozzle 24, SC1 nozzle 25>
The substrate processing apparatus 1 is also held by the wafer rotation mechanism 3 and the DIW nozzle 24 for supplying DIW (deionized water) as a rinsing liquid to the surface of the wafer W held by the wafer rotation mechanism 3. And SC1 nozzle 25 for supplying SC1 (ammonia-hydrogen peroxide mixture) to the surface of the wafer W as a cleaning chemical.

  The DIW nozzle 24 is, for example, a straight nozzle that discharges DIW in a continuous flow state. The DIW nozzle 24 is attached to the tip of the third liquid arm 32 extending substantially horizontally with its discharge port directed downward. The third liquid arm 32 is provided so as to be able to turn around a predetermined swing axis extending in the vertical direction. Coupled to the third liquid arm 32 is a third liquid arm drive mechanism 33 (nozzle scanning unit) for swinging the third liquid arm 32 within a predetermined angle range and moving the third liquid arm 32 up and down. ing. By swinging the third liquid arm 32, the DIW nozzle 24 is positioned between a position located immediately above the wafer W held by the wafer rotation mechanism 3 and a home position set to the side of the wafer rotation mechanism 3. Moved.

  A DIW supply pipe 26 to which DIW is supplied from a DIW supply source is connected to the DIW nozzle 24. A DIW valve 27 for switching supply / stop of supply of DIW from the DIW nozzle 24 is interposed in the middle of the DIW supply pipe 26.

  The SC1 nozzle 25 is, for example, a straight nozzle that discharges SC1 in a continuous flow state. The SC1 nozzle 25 is attached to the tip of the second liquid arm 28 that extends substantially horizontally with its discharge port directed downward. The second liquid arm 28 is provided so as to be rotatable around a predetermined swing axis extending in the vertical direction. Coupled to the second liquid arm 28 is a second liquid arm drive mechanism 29 (nozzle scanning unit) for swinging the second liquid arm 28 within a predetermined angle range and moving the second liquid arm 28 up and down. ing. As the second liquid arm 28 swings, the SC1 nozzle 25 moves between a position located immediately above the wafer W held by the wafer rotating mechanism 3 and a home position set to the side of the wafer rotating mechanism 3. Is done.

  An SC1 supply pipe 30 to which SC1 from an SC1 supply source is supplied is connected to the SC1 nozzle 25. An SC1 valve 31 for switching supply / stop of supply of SC1 from the SC1 nozzle 25 is interposed in the middle of the SC1 supply pipe 30.

<Processing cup 40>
Around the wafer rotation mechanism 3, a processing cup 40 including an inner cup 41, an intermediate cup 42, and an outer cup 43 that can be moved up and down independently of each other is disposed.

  The inner cup 41 surrounds the wafer rotation mechanism 3 and has a shape that is substantially rotationally symmetric with respect to a rotation axis C that passes through the center of the wafer W held by the wafer rotation mechanism 3. The inner cup 41 has an annular bottom 44 in plan view, a cylindrical inner wall 45 rising upward from the inner periphery of the bottom 44, a cylindrical outer wall 46 rising upward from the outer periphery of the bottom 44, and an inner wall The first guide part 47 rises from between the outer wall part 45 and the outer wall part 46 and extends obliquely upward in the center side (in the direction approaching the rotation axis C of the wafer W held by the wafer rotation mechanism 3) while drawing a smooth arc at the upper end part. And a cylindrical middle wall portion 48 that rises upward from between the first guide portion 47 and the outer wall portion 46.

  The inner wall portion 45 is formed in such a length as to be accommodated with an appropriate gap between the outer wall of the wafer rotating mechanism 3 and the bowl-shaped member 54 in a state where the inner cup 41 is raised most ( 9 and 10). The middle wall portion 48 is accommodated with a suitable gap between a second guide portion 52 (described later) of the middle cup 42 and the processing liquid separation wall 53 in a state where the inner cup 41 and the middle cup 42 are closest to each other. It is formed in such a length.

  The upper end portion of the first guide portion 47 extends obliquely upward in the center side (direction approaching the rotation axis C of the wafer W) while drawing a smooth arc.

  In addition, a groove 49 is formed between the inner wall portion 45 and the first guide portion 47 for collecting the used processing liquid and discharging it to the outside of the processing cup 40. Similarly, a groove 50 is formed between the first guide portion 47 and the middle wall portion 48. Similarly, a groove 51 is formed between the middle wall portion 48 and the outer wall portion 46. Each of the grooves 49 to 51 is provided with a discharge path, and each discharge path is connected to a recovery mechanism or a discard mechanism. As a result, the processing liquid discharged from each discharge path is collected or discarded.

  The middle cup 42 surrounds the periphery of the wafer rotation mechanism 3 and has a shape that is substantially rotationally symmetric with respect to a rotation axis C that passes through the center of the wafer W held by the wafer rotation mechanism 3. The middle cup 42 has a second guide 52 extending obliquely upward in the center (in a direction approaching the rotation axis C of the wafer W held by the wafer rotation mechanism 3) while drawing a smooth arc at the upper end, and the second guide. A cylindrical processing liquid separation wall 53 connected integrally to the outside of the unit 52 (in a direction away from the rotation axis C of the wafer W held by the wafer rotation mechanism 3) is integrally provided.

  The lower end portion of the second guide portion 52 is accommodated with an appropriate gap between the first guide portion 47 and the middle wall portion 48 in a state where the inner cup 41 and the middle cup 42 are closest to each other. Further, the upper end portion of the second guide portion 52 is provided so as to overlap with the upper end portion of the first guide portion 47 of the inner cup 41 in the vertical direction, and the inner cup 41 and the middle cup 42 are closest to each other. The one guide portion 47 is close to the upper end portion with a very small distance.

  The processing liquid separation wall 53 is accommodated in the groove 51 with an appropriate gap between the inner wall portion 48 and the outer cup 43 in a state where the inner cup 41 and the inner cup 42 are closest to each other.

  The outer cup 43 surrounds the periphery of the wafer rotation mechanism 3 outside the second guide portion 52 of the middle cup 42 and is substantially rotationally symmetric with respect to the rotation axis C passing through the center of the wafer W held by the wafer rotation mechanism 3. It has the shape which becomes. The outer cup 43 has a function as a third guide part.

  The upper end portion of the outer cup 43 extends obliquely upward in the center side (direction approaching the rotation axis C of the wafer W) while drawing a smooth arc.

  The lower end of the outer cup 43 has an appropriate gap between the processing liquid separation wall 53 of the inner cup 42 and the outer wall 46 of the inner cup 41 with the inner cup 41 and the outer cup 43 being closest to each other. Be contained. Further, the upper end portion of the outer cup 43 is provided so as to overlap the second guide portion 52 of the middle cup 42 in the vertical direction, and the middle cup 42 and the outer cup 43 are closest to each other in the second guide portion 52. Close to the upper end with a very small distance.

  Further, each of the inner cup 41, the middle cup 42 and the outer cup 43 is provided with an elevating mechanism (not shown), and is thereby raised and lowered independently. As such an elevating mechanism, for example, various mechanisms such as a ball screw mechanism and an air cylinder can be employed.

<Cover forming part 80>
The cover forming unit 80 includes two cover members 81 capable of transitioning between a separated state (solid line in FIG. 1) separated from each other and a coupled state (one-dot chain line in FIG. 1) coupled to each other, And two displacement mechanisms 82 for displacing the cover member 81.

  FIG. 2 is a perspective view showing a configuration related to the wafer rotation mechanism 3, the processing cup 40, and the cover forming unit 80 among the configurations related to the substrate processing apparatus 1. In FIG. 2, the two cover members 81 are in a coupled state. In this specification, the “coupled state” of the two cover members 81 means not only the state in which the two cover members 81 are in direct contact with each other but also the proximity in the state in which the two cover members 81 are substantially in contact with each other. As a result, the upper space of the substrate holding region is covered by the two cover members 81 as a whole.

  The cover member 81 has an arc shape (half-ring shape) flange portion 810 having an angle of 180 ° in a horizontal plane, and extends in a horizontal direction by a predetermined length from the upper end of the flange portion 810 toward the center point of the arc shape. And a substantially U-shaped member in a horizontal plan view. Each of the two cover members 81 has the same diameter, and is arranged with the chord direction facing inward and the end surfaces 813 facing each other.

  A displacement mechanism 82 for displacing the cover member 81 is connected to each of the two cover members 81. The displacement mechanism 82 includes an elevating mechanism (for example, a stepping motor) that moves the cover member 81 connected to the displacement mechanism 82 up and down along a vertical axis, and a cover member 81 connected to the displacement mechanism 82 in a horizontal plane. And an advancing / retracting mechanism for moving the wafer W forward and backward along the radial direction of the wafer W held by the wafer rotating mechanism 3. For this reason, when the two displacement mechanisms 82 are driven synchronously, the two cover members are displaced synchronously, and the state transition between the separated state (solid line portion in FIG. 1) and the coupled state (one-dot chain line portion in FIG. 1) occurs. Done.

  Specifically, the position (retracted position) of the two cover members 81 in the separated state is a position on the side of the spin base 8 in the horizontal plane and above the processing cup 40 when raised in the vertical direction. (FIGS. 5 and 8 to 10). For this reason, in the separated state, the space above the substrate holding region is opened. As an aspect different from the present embodiment, for example, the retracted position of the two cover members 81 is lateral to the processing cup 40 in the horizontal plan view and is below the spin base 8 in the vertical direction. It does not matter. In this aspect, the space above the substrate holding region can be further opened.

  In addition, the position (processing position) of the two cover members 81 in the combined state is specifically the inner side of the region where the processing cup 40 is present in the horizontal plane and the cup that has risen among the processing cups 40 in the vertical direction. The position is substantially the same height as the upper end (FIGS. 6 and 7). In the coupled state, the end surfaces 813 of the two cover members 81 are in contact with each other, and the upper space of the substrate holding region is covered by the two cover members 81. In this specification, a space sandwiched between the upper surface S1 of the wafer W held by the wafer rotation mechanism 3 and the lower surface of the cover member 81 in the coupled state is referred to as a processing space L2.

  Further, as described above, the two cover members 81 are formed in a substantially U shape in a horizontal view. For this reason, in the coupled state in which the end faces 813 of the two cover members 81 are in contact with each other, the cover gap portion (hereinafter referred to as “gap portion”) in which the two cover members 81 do not exist in at least a part of the substrate holding region in the horizontal plane view. 814 ") is formed.

  When carrying the wafer W into the substrate processing apparatus 1, a transfer robot (not shown) carries the wafer W into the processing chamber 2 through the opening 2 a provided on the side wall of the processing chamber 2, and a plurality of gripping members 9. The wafer W is carried to the substrate holding region via the space above the substrate holding region. The plurality of gripping members 9 are driven in conjunction with each other by a link mechanism (not shown), whereby the wafer W is transferred from the transfer robot to the plurality of gripping members 9.

  On the other hand, when the wafer W is unloaded from the substrate processing apparatus 1, the plurality of gripping members 9 are driven by the link mechanism in a state where the transfer robot has accessed the substrate holding region, and the wafer W is driven by the plurality of gripping members 9. To the transfer robot. Then, in a state where the transfer robot holds the wafer W, the wafer W is carried out from the processing chamber 2 through the opening 2a via the space above the substrate holding region.

  In this way, during the wafer W loading / unloading process in the substrate processing apparatus 1, the wafer W is transferred via the space above the substrate holding region. Therefore, at least at these timings, the two cover members 81 are in a separated state (a state in which the space above the substrate holding region is avoided), and the upper portion of the substrate holding region is opened. In the separated state, the processing space L2 is not formed because the upper space of the substrate holding region is opened.

  Further, in the SPM process described later, for the purpose of preventing the atmosphere generated in the process (for example, fumes generated by a chemical reaction between the resist and the SPM liquid) from diffusing into the processing chamber 2, a stripping solution is supplied. The SPM liquid is supplied to the upper surface S1 of the wafer W through the gap portion 814 of the two cover members 81 in which the nozzle 4 is coupled (FIG. 6). Therefore, at least at this timing, the two cover members 81 are brought into a coupled state, and the upper portion of the substrate holding region is covered.

  In the resist removal process described later, the two control members 55 are driven and controlled by the control device 55 so that the two cover members 81 displaced by the displacement mechanism 82 and the processing cup 40 moved up and down by the lifting mechanism do not interfere with each other.

<Air supply path 35, exhaust path 38>
As shown in FIGS. 1 and 5 to 10, the substrate processing apparatus 1 includes a fan filter unit 34 provided on the ceiling wall of the processing chamber 2, an air supply source 36 (see FIG. 1), and a fan filter unit. 34 and an air supply path 36 (see FIG. 1). The fan filter unit 34 is a device for supplying purified air into the processing chamber 2, and an air supply opening thereof opens downward above the wafer rotation mechanism 3.

  Further, the substrate processing apparatus 1 has an exhaust port 37 that opens into a space L <b> 1 sandwiched between the inner wall portion 45 and the first guide portion 47, an exhaust source 39, and an exhaust path 38 that connects the exhaust port 37 and the exhaust source 39. With.

  During the SPM process, air is supplied from the fan filter unit 34 to the process space L2 through the gap 814, and the atmosphere in the process space L2 is communicated with the process space L2 through the space L1. Is exhausted. As a result, an air flow is formed in the processing space L2 (details will be described later with reference to FIG. 6).

<Control device 55>
FIG. 3 is a block diagram showing an electrical configuration of the substrate processing apparatus 1. The substrate processing apparatus 1 further includes a control device 55 configured to include a microcomputer. The control device 55 includes a motor 6, a displacement mechanism 82, a fan filter unit 34, an exhaust source 39, a first liquid arm drive mechanism 12, a second liquid arm drive mechanism 29, a third liquid arm drive mechanism 33, a sulfuric acid valve 18, A hydrogen peroxide solution valve 20, a stripping solution valve 23, a DIW valve 27, an SC1 valve 31, flow rate adjusting valves 19, 21 and the like are connected as control targets.

<1.2 Operation of Substrate Processing Apparatus 1>
FIG. 4 is a process diagram showing a processing example of resist removal processing in the substrate processing apparatus 1. 5 to 10 are schematic cross-sectional views for explaining the flow of resist removal processing.

  Hereinafter, an example of the resist removal process will be described.

  During the resist removal process, a transfer robot (not shown) is controlled, and the wafer W after the ion implantation process is loaded into the processing chamber 2 (FIG. 1) (step ST1: substrate loading process). As described above, in the substrate carry-in process, the two cover members 81 are separated from each other, and the wafer W passes through the upper space of the substrate holding region and the wafer rotating mechanism 3 (more precisely, the plurality of holding members 9). ) (FIG. 5). At this time, the stripping solution supply nozzle 4, the DIW nozzle 24, and the SC1 nozzle 25 are respectively disposed at the home positions so as not to hinder the loading of the wafer W.

  When the wafer W is held by the wafer rotation mechanism 3, the control device 55 controls the motor 6 to rotate the wafer W around the rotation axis C (rotation process). The rotation speed of the wafer W is, for example, 100 rpm.

  The control device 55 controls the first liquid arm driving mechanism 12 to move the peeling liquid supply nozzle 4 to a position above the wafer W. Further, the control device 55 controls the displacement mechanism 82 to bring the two cover members 81 into a coupled state, thereby covering the upper space of the wafer W and forming the processing space L2 (cover process). At this time, the stripping solution supply nozzle 4 is arranged so as to vertically penetrate the gap portion 814 of the two cover members 81 in the combined state. Moreover, the control apparatus 55 controls the raising / lowering mechanism (not shown), and raises the outer cup 43 (FIG. 6).

  Thereafter, the control device 55 opens the sulfuric acid valve 18, the hydrogen peroxide solution valve 20, and the stripping solution valve 23, and supplies the hot SPM solution from the stripping solution supply nozzle 4 to the upper surface S1 of the wafer W (supplying step). In the present embodiment, the center position P1 of the wafer W is in the range of the gap 814 in the horizontal plan view (FIG. 6). For this reason, the SPM liquid discharged from the peeling liquid supply nozzle 4 penetrating vertically through the gap portion 814 is supplied to the vicinity of the center of the upper surface S1 of the wafer W to be rotated.

  Since the wafer W is rotated in a horizontal posture, the SPM liquid supplied to the upper surface S1 of the wafer W is diffused by the rotational centrifugal force, and the entire upper surface S1 of the wafer W is covered with the high-temperature SPM liquid. As a result, the reaction between the resist on the upper surface S1 of the wafer W and the high-temperature SPM solution advances, and the resist is peeled off from the upper surface S1 of the wafer W (step ST2).

  The peeled resist is swept away by the SPM liquid that diffuses on the upper surface S1 of the wafer W by the centrifugal force of rotation, and is scattered to the side of the wafer W together with the SPM liquid. The SPM liquid and the resist scattered on the side of the wafer W are mainly deposited on the upper surface of the second guide portion 52 of the middle cup 42 or the lower surface of the outer cup 43 (third guide portion), and the outside of the substrate processing apparatus 1. Is discharged.

  In the SPM process (step ST2), a specific atmosphere (for example, fumes generated by a chemical reaction between the resist and the SPM liquid) is generated in the processing space L2, but the two cover members 81 are in a combined state. It is possible to suppress the atmosphere from rising and diffusing into the processing chamber 2.

  In parallel with the supply process, an air supply operation from the fan filter unit 34 to the processing space L2 is performed through the gap 814 (air supply process). In parallel with the supply step, the exhaust operation of the exhaust source 39 for exhausting from the processing space L2 through the space L1 is performed (exhaust step). By the air supply operation and the exhaust operation, an air flow from the gap 814 toward the space L1 is formed in the processing space L2.

  For this reason, the atmosphere generated in the processing space L2 by the SPM processing is exhausted to the exhaust source 39 along the air flow, and the atmosphere is further suppressed from rising and diffusing into the processing chamber 2.

  When the supply of the SPM liquid is continued for a predetermined time, the control device 55 closes the sulfuric acid valve 18, the hydrogen peroxide solution valve 20, and the stripping solution valve 23, and controls the first liquid arm driving mechanism 12 to perform the first operation. Return the liquid arm 11 to the home position.

  When the SPM processing is completed, the control device 55 controls the motor 6 to increase the rotation speed of the wafer W to a predetermined liquid processing rotation speed (for example, 1000 rpm). Further, the controller 55 controls the third liquid arm drive mechanism 33 to move the DIW nozzle 24 to a position above the wafer W. At this time, the DIW nozzle 24 is arranged so as to vertically penetrate the gap portion 814 of the two cover members 81 in the combined state.

  Then, the control device 55 opens the DIW valve 27 and supplies DIW from the discharge port of the DIW nozzle 24 toward the vicinity of the rotation center of the wafer W (step ST3). DIW supplied to the upper surface S1 of the wafer W receives the centrifugal force generated by the rotation of the wafer W and flows along the upper surface S1 of the wafer W toward the periphery of the wafer W (FIG. 7).

  As a result, the SPM liquid adhering to the upper surface S <b> 1 of the wafer W is pushed away by the DIW, and the SPM liquid and the DIW are scattered to the side of the wafer W. The SPM liquid and DIW scattered to the side of the wafer W are mainly deposited on the upper surface of the second guide portion 52 of the middle cup 42 or the lower surface of the outer cup 43 (third guide portion), and the outside of the substrate processing apparatus 1. Is discharged.

  When the supply of DIW is continued for a predetermined intermediate rinse time, the control device 55 closes the DIW valve 27 and controls the third liquid arm drive mechanism 33 to return the third liquid arm 32 to the home position.

  When the DIW process is completed, the control device 55 controls the second liquid arm drive mechanism 29 to move the SC1 nozzle 25 to a position above the wafer W. Further, the control device 55 controls the displacement mechanism 82 so that the two cover members 81 are separated. Further, the control device 55 controls the lifting mechanism (not shown) to raise the middle cup 42. As a result, the middle cup 42 and the outer cup 43 are raised (see FIG. 8).

  While maintaining the rotation speed of the wafer W at the liquid processing rotation speed, the controller 55 opens the SC1 valve 31 and supplies SC1 from the SC1 nozzle 25 to the surface of the wafer W (step ST4). Further, the control device 55 controls the second liquid arm drive mechanism 29 to swing the second liquid arm 28 within a predetermined angular range, and moves the SC1 nozzle 25 between the rotation center of the wafer W and the peripheral edge. Reciprocate between them. As a result, the liquid deposition position of SC1 supplied from the SC1 nozzle 25 onto the upper surface S1 of the wafer W is an arc shape that intersects the rotation direction of the wafer W within the range from the rotation center of the wafer W to the peripheral edge of the wafer W. Move back and forth while drawing the trajectory. As a result, SC1 is supplied uniformly over the entire upper surface S1 of the wafer W, and foreign substances such as resist residues and particles adhering to the upper surface S1 of the wafer W are removed by the chemical ability of SC1 (FIG. 8).

  The foreign matter is swept away by the SC1 that diffuses on the upper surface S1 of the wafer W by the centrifugal force of rotation, and is scattered to the side of the wafer W together with the SC1 liquid. The SC1 liquid and the foreign matter scattered to the side of the wafer W are mainly deposited on the upper surface of the first guide portion 47 of the inner cup 41 or the lower surface of the second guide portion 52 of the inner cup 42, and It is discharged outside.

  When the supply of SC1 is continued for a predetermined SC1 supply time, the control device 55 closes the SC1 valve 31 and controls the second liquid arm drive mechanism 29 to return the SC1 nozzle 25 to the home position.

  When the SC1 process ends, the control device 55 controls the third liquid arm drive mechanism 33 to move the DIW nozzle 24 to a position above the wafer W.

  In a state where the rotation speed of the wafer W is maintained at the liquid processing rotation speed, the control device 55 opens the DIW valve 27 and supplies DIW from the discharge port of the DIW nozzle 24 toward the rotation center of the wafer W ( Step ST5). The DIW supplied to the upper surface S1 of the wafer W receives a centrifugal force due to the rotation of the wafer W and flows along the upper surface S1 of the wafer W toward the periphery of the wafer W (FIG. 9).

  SC1 is swept away by DIW diffusing on the upper surface S1 of the wafer W by the centrifugal force of rotation, and scattered to the side of the wafer W together with the DIW liquid. The SC1 and DIW scattered to the side of the wafer W are mainly deposited on the upper surface of the first guide portion 47 of the inner cup 41 or the lower surface of the second guide portion 52 of the inner cup 42, and to the outside of the substrate processing apparatus 1. And discharged.

  When the DIW supply is continued for a predetermined DIW supply time, the controller 55 closes the DIW valve 27 and controls the third liquid arm drive mechanism 33 to return the DIW nozzle 24 to the home position. In addition, the control device 55 controls the lifting mechanism (not shown) to raise the inner cup 41. Thereby, all the processing cups 40 (the inner cup 41, the middle cup 42, and the outer cup 43) are in a raised state (see FIG. 10).

  Thereafter, the control device 55 drives the motor 6 to increase the rotation speed of the wafer W to a predetermined high rotation speed (for example, 1500 to 2500 rpm). Thereby, a spin dry process is performed in which the DIW adhering to the wafer W is spun off by high speed rotation and dried (step ST6, FIG. 10).

  When the spin dry process is performed for a predetermined spin dry process time, the controller 55 gives a command to the motor 6 to stop the rotation of the wafer rotating mechanism 3.

  As a result, the resist removal process for one wafer W is completed, and the processed wafer W is unloaded from the processing chamber 2 by the transfer robot (step ST7, substrate unloading process). At this time, the two cover members 81 are in a separated state, and the wafer W is unloaded from the processing chamber 2 via the space above the substrate holding region.

  Also for subsequent wafers W, by repeating the operations in steps ST1 to ST7 described above, resist removal processing is sequentially performed on a plurality of wafers W while preventing an atmosphere such as fumes from scattering into the processing chamber 2. Can be executed. In the present embodiment, the atmosphere may adhere to the lower surface of the cover member 81. Therefore, it is desirable to execute a cleaning process for cleaning the lower surface of the cover member 81 every time a predetermined number of wafers W are processed.

<2 Modification>
While the embodiments of the present invention have been described above, the present invention can be modified in various ways other than those described above without departing from the spirit of the present invention. Hereinafter, modifications of the above-described embodiment will be described, but the same elements as those of the above-described embodiment are denoted by the same reference numerals, and redundant description will be omitted.

  In the above embodiment, the substrate processing apparatus 1 that performs the resist removal processing using the SPM solution as the resist stripping solution has been described. However, the substrate processing apparatus to which the present invention is applicable is not limited thereto. The present invention can be applied to various substrate processing apparatuses such as a substrate processing apparatus that performs selective etching processing of a nitride film or the like using high-temperature phosphoric acid.

  Moreover, although the said embodiment demonstrated the aspect which suppresses scattering of the fume which arises by a chemical reaction by performing the SPM process by making the two cover members 81 into a joint state, it is not restricted to this. The effect of the present invention (atmosphere scattering suppression effect) is also effective for preventing the scattering of mere steam and the like in addition to the above-described fume scattering prevention.

  FIG. 11 is a top view showing a cover member 81A according to a modification. FIG. 12 is a cross-sectional view of the cover member 81A viewed from the AA cross section of FIG. In FIG. 12, a stripping solution supply nozzle 4A (not shown in FIG. 11) is illustrated.

  The two cover members 81A have a sealing member 815 that surrounds the gap portion 814A in the coupled state in the horizontal plane view. The stripping solution supply nozzle 4A has a tapered portion whose outer diameter decreases from the top to the bottom. Similarly, the inner diameter of the sealing member 815 is also tapered so as to decrease from the upper side to the lower side.

  In this modification, the stripping solution supply nozzle 4A is fitted into a gap portion 814A surrounded by the two sealing members 815 in a combined state, and the inner edge of the two sealing members 815 and the taper portion of the stripping solution supply nozzle 4A. The SPM process is executed with the outer edge being in close contact (FIG. 12). As a result, the atmosphere generated in the processing space L2 due to the SPM processing is further suppressed from being diffused into the processing chamber 2.

  FIG. 13 is a top view showing a cover member 81B according to a modification.

  In the above embodiment, the substantially U-shaped cover member 81 in the horizontal plan view has been described, but the shape of the cover member is not limited to this. For example, as shown in FIG. 13, a cover member 81 </ b> B having a substantially crescent shape in a horizontal plan view may be used. In this case, by making the radius of curvature of the inner edge of the cover member 81B the same as or larger than the radius of the wafer W, the horizontal direction of the cover member 81B when the state transition between the separated state and the coupled state is performed. The displacement width can be reduced.

  In addition, if a gap extending in one horizontal direction is formed, such as the gap 814B, the nozzle scanning unit supplies the peeling liquid while the peeling liquid supply nozzle 4 penetrates the gap during the SPM process. By moving the nozzle 4 along the one direction, it is possible to supply the SPM liquid directly from the peeling liquid supply nozzle 4 to the entire upper surface S1 of the wafer W to be rotated.

  FIG. 14 is a top view showing a cover member 81C according to a modification.

  In the above embodiment, the case where the gap 814 is a hole surrounded by the two cover members 81 in the combined state has been described, but the present invention is not limited to this. For example, as shown in FIG. 14, the gap 814C may be a notch for the two cover members 81C in the coupled state.

  In particular, the gap portion 814C of the present modification is formed from the center portion to the end portion of the two cover members 81C in a combined state that are substantially circular in a horizontal view. For this reason, in the processing of SPM performed in the combined state, the nozzle scanning unit can move the stripping solution supply nozzle 4 along the gap 814C from the center to the end of the circle, thereby rotating the wafer. It becomes possible to supply the SPM liquid directly to the entire upper surface S1 of W.

  In the above-described embodiment, the aspect in which the two cover members 81 are arranged has been described. However, an aspect in which three or more cover members 81 are arranged may be used. Similarly, the number of each part can be changed as needed.

  Although the substrate processing apparatus according to the embodiment and its modification has been described above, these are examples of the preferred embodiment of the present invention, and do not limit the scope of implementation of the present invention. Within the scope of the invention, the present invention can be freely combined with each embodiment, modified with any component in each embodiment, or omitted with any component in each embodiment.

DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 3 Wafer rotation mechanism 4 Stripping liquid supply nozzle 9 Holding member 24 DIW nozzle 25 SC1 nozzle 34 Fan filter unit 40 Processing cup 41 Inner cup 42 Middle cup 43 Outer cup 81, 81A-81C Cover member 814, 814A-814C Air gap 82 Displacement mechanism L1 space L2 Processing space S1 Upper surface W Wafer

Claims (14)

A substrate processing apparatus,
A substrate rotating unit that holds the substrate in a horizontal posture in the substrate holding region and rotates the substrate around a vertical axis;
A nozzle for supplying a processing liquid to the upper main surface of the substrate held by the substrate rotating unit;
A plurality of cover members capable of transitioning between a separated state separated from each other and a coupled state coupled to each other;
A displacement mechanism for displacing each of the plurality of cover members and performing state transition between the separated state and the coupled state;
With
In the coupled state, the upper space of the substrate holding region is covered with the plurality of cover members coupled to each other to form a processing space, whereas in the separated state, the upper space is opened and the processing space is not formed. ,
In the combined state, in a horizontal view, at least a part of the substrate holding region has a cover gap portion where the plurality of cover members do not exist ,
Prior Symbol bound state, the nozzle supplies the processing solution through the cover gap portion of the plurality of cover members to an upper major surface of said substrate,
In the combined state, the nozzle supplies the processing liquid to the upper main surface of the substrate in a state of being in close contact with the plurality of cover members . The substrate processing apparatus according to claim 1 ,
The plurality of cover members include a sealing member that surrounds the cover gap in a horizontal view in the combined state;
In the combined state, a processing liquid is supplied to the main surface of the upper surface of the substrate in a state where the outer edge of the nozzle and the inner edge of the sealing member are in close contact with each other. The substrate processing apparatus according to claim 1 or 2 , wherein
The plurality of cover members are formed in a tapered shape in which the inner diameter that surrounds the cover gap portion in a horizontal view in the combined state decreases from above to below,
The substrate processing apparatus according to claim 1, wherein the nozzle has a tapered shape in which an outer diameter decreases from the upper side to the lower side . A substrate processing apparatus according to any one of claims 1 to 3 ,
An exhaust path connecting an exhaust port communicating with the processing space and an exhaust source;
The substrate processing apparatus, wherein the exhaust source exhausts the atmosphere of the processing space through the exhaust port and the exhaust path in the coupled state. The substrate processing apparatus according to claim 1 , wherein:
An air supply path that connects an air supply port communicating with the processing space via the cover gap and an air supply source;
The substrate processing apparatus, wherein the supply source supplies air to the processing space through the supply passage and the supply port in the combined state. A substrate processing apparatus according to any one of claims 1 to 5 ,
The substrate processing apparatus according to claim 1, wherein a center position of the substrate is located in the cover gap in a horizontal view. A substrate processing apparatus according to any one of claims 1 to 6 ,
The substrate processing apparatus, wherein the cover gap is a hole surrounded by the plurality of cover members in the coupled state. A substrate processing apparatus according to any one of claims 1 to 7 ,
The substrate processing apparatus, wherein the displacement mechanism displaces the plurality of cover members along a radial direction of the substrate held by the substrate rotating unit. A substrate processing apparatus according to any one of claims 1 to 8 ,
The substrate processing apparatus, wherein the processing liquid is a mixed liquid of sulfuric acid and hydrogen peroxide. A substrate processing method comprising:
A plurality of cover members capable of transitioning between a separated state separated from each other and a coupled state coupled to each other are set in the separated state so as to avoid the upper space of the substrate holding region, and the substrate is passed through the upper space. A substrate carrying-in process for carrying it into the substrate holding area;
A rotating step of holding the substrate in a horizontal posture in the substrate holding region and rotating the substrate around a vertical axis;
A cover step of covering the upper space by forming the plurality of cover members in the combined state and forming a processing space;
A supply step of supplying a processing liquid from a nozzle to the upper main surface of the substrate;
A substrate unloading step of bringing the plurality of cover members into the separated state and unloading the substrate from the substrate holding region via the upper space;
Have
In the combined state, in a horizontal view, at least a part of the substrate holding region has a cover gap portion where the plurality of cover members do not exist ,
Prior Symbol supplying step, the nozzle penetrates the cover gap portion of the plurality of cover members to supply the processing liquid to the upper major surface of the substrate,
In the supplying step, in the combined state, the nozzle supplies a processing liquid to the upper main surface of the substrate in a state of being in close contact with the plurality of cover members . The substrate processing method according to claim 10 , comprising:
The plurality of cover members include a sealing member that surrounds the cover gap in a horizontal view in the combined state;
In the supplying step, a processing liquid is supplied to the main surface of the upper surface of the substrate in a state where the outer edge of the nozzle and the inner edge of the sealing member are in close contact with each other in the coupled state . The substrate processing method according to claim 10 or 11 ,
The plurality of cover members are formed in a tapered shape in which the inner diameter that surrounds the cover gap portion in a horizontal view in the combined state decreases from above to below,
The said nozzle is formed in the taper shape from which an outer diameter becomes small toward the downward direction from the upper direction, The substrate processing method characterized by the above-mentioned. A substrate processing method according to any one of claims 10 to 12 ,
A substrate processing method, further comprising: an exhausting step that is performed in parallel with the supplying step and exhausts the atmosphere of the processing space. A substrate processing method according to any one of claims 10 to 13 ,
A substrate processing method, further comprising an air supply step that is performed in parallel with the supply step and supplies air to the processing space through the cover gap.

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