JP6322026B2 - Die bond film, die bond film with dicing sheet, semiconductor device, and method for manufacturing semiconductor device - Google Patents

Description

  The present invention relates to a die bond film, a die bond film with a dicing sheet, a semiconductor device, and a method for manufacturing the semiconductor device.

  Conventionally, a die bond film is sometimes used in the manufacturing process of a semiconductor device (see, for example, Patent Document 1). The die bond film is used when a semiconductor chip is fixed to an adherend such as a lead frame.

Japanese Patent Laid-Open No. 05-179211

  However, in a die-bonding film, when a semiconductor chip with a die-bonding film is die-bonded to a lead frame or the like, bubbles (voids) are generated between the die-bonding film and the semiconductor chip or between the die-bonding film and the adherend. There is.

  The present invention has been made in view of the above problems, and even if the object is generated between a die bond film and a semiconductor chip or between a die bond film and an adherend, the effect of voids is reduced. An object of the present invention is to provide a die bond film and a die bond film with a dicing sheet. Moreover, it is providing the semiconductor device manufactured using the said die-bonding film or the said die-bonding film with a dicing sheet. Moreover, it is providing the manufacturing method of the semiconductor device using the said die-bonding film with a dicing sheet.

  The present inventors have intensively studied to solve the above problems. As a result, by adopting a die bond film with the following configuration, even if it occurs between the die bond film and the semiconductor chip or between the die bond film and the adherend, it is possible to reduce the influence of voids. As a result, the present invention has been completed.

That is, the die bond film according to the present invention has a storage elastic modulus E′1 at 150 ° C. before heat treatment of 0.1 MPa to 10 MPa,
The difference (E′2−E′1) between E′1 and the storage elastic modulus E′2 at 150 ° C. after heating at 150 ° C. for 1 hour is 5 MPa or less.

According to the said structure, the storage elastic modulus E'1 in 150 degreeC before heat processing is 10 Mpa or less, and has a comparatively softness | flexibility. Therefore, even if a void occurs in the die bonding process, it is dispersed in the resin without being expanded by the pressure in the sealing process (the process of sealing the semiconductor chip with the sealing resin) and disappears visually. be able to. As a result, the influence of voids can be reduced.
Further, the difference (E′2−E′1) between the E′1 and the storage elastic modulus E′2 at 150 ° C. after heating at 150 ° C. for 1 hour is 5 MPa or less, and the thermal history before the sealing step Therefore, it has the property of not becoming hard. Therefore, even after a long thermal history due to the multi-stage chip etc., the void can be visually disappeared by the pressure in the sealing process. As a result, the influence of voids can be reduced.
Moreover, since the storage elastic modulus E′1 at 150 ° C. before the heat treatment is 0.1 MPa or more, chip cracking during wire bonding can be prevented.

  In the above configuration, it is preferable that a ratio (E′1 / E′2) between E′1 and E′2 is 0.2 to 1.

  When the ratio (E′1 / E′2) is 0.2 or more, it has a property of becoming harder due to the thermal history before the sealing step. Therefore, even after a long thermal history due to the multi-stage chip etc., the void can be visually disappeared by the pressure in the sealing process. As a result, the influence of voids can be further reduced.

In the above configuration, the difference between the loss elastic modulus E ″ 1 at 150 ° C. before heat treatment and the loss elastic modulus E ″ 2 at 150 ° C. after heating at 150 ° C. for 1 hour (E ″ 2-E). '' 1) is 1 MPa or less,
The ratio of E ″ 1 to E ″ 2 (E ″ 1 / E ″ 2) is preferably 0.2-1.

  When the difference (E ″ 2-E ″ 1) is 1 MPa or less and the ratio (E ″ 1 / E ″ 2) is 0.2 or more, the thermal history before the sealing step Therefore, it has the property of becoming harder. Therefore, even after a long thermal history due to the multi-stage chip etc., the void can be visually disappeared by the pressure in the sealing process. As a result, the influence of voids can be further reduced.

  In the above configuration, it is preferable that the difference (tan δ2−tan δ1) between the peak temperature of the loss tangent tan δ1 before the heat treatment and the peak temperature of the loss tangent tan δ2 after heating at 150 ° C. for 1 hour is within 10 ° C.

  When the difference (tan δ2−tan δ1) is within 10 ° C., the reaction hardly occurs due to the thermal history before the sealing step. Therefore, even after a long thermal history due to the multi-stage chip, etc., the flexible state can be maintained, and the void can be apparently disappeared by the pressure in the sealing process. As a result, the influence of voids can be further reduced.

  In the above configuration, the ratio (L2 / L1) of the tensile breaking elongation L1 at 25 ° C. before heat treatment to the tensile breaking elongation L2 at 25 ° C. after heating at 150 ° C. for 1 hour is 0.5 to 1. 0 is preferred.

  When the ratio (L2 / L1) is 0.5 or more, even if a certain amount of heat is applied, there is little change in the tensile elongation at break. Therefore, it has the property that reaction is less likely to occur due to the thermal history before the sealing step. Therefore, even after a long thermal history due to the multi-stage chip, etc., the flexible state can be maintained, and the void can be apparently disappeared by the pressure in the sealing process. As a result, the influence of voids can be further reduced.

  In the above structure, an acrylic material obtained by polymerizing a monomer raw material containing alkyl acrylate or alkyl methacrylate and 1% by weight to 30% by weight of acrylonitrile and having an epoxy group or a carboxyl group as a functional group It is preferable to contain a copolymer.

  When an acrylic copolymer having an epoxy group or a carboxyl group is contained as a functional group, crosslinking can be formed by the functional group by heating in the crosslinking formation step. Moreover, the cohesive force in a bridge | crosslinking formation process can be improved as the said acrylic copolymer is a thing obtained by superposing | polymerizing the monomer raw material containing acrylonitrile. As a result, the adhesive force after the cross-linking formation step can be improved.

  In the said structure, it is preferable not to contain a thermal crosslinking catalyst substantially.

  If the thermal crosslinking catalyst is not substantially contained, it is possible to suppress the formation of the crosslinked structure due to the thermal history before the sealing step.

  In the said structure, it is preferable to contain a 0-15 weight% thermal crosslinking agent with respect to the whole organic resin composition.

  When 0-15 weight% of thermal crosslinking agents are contained with respect to the whole organic resin composition, the functional group which a thermoplastic resin has and a crosslinked structure can be formed by the heating in a crosslinking formation process. As a result, it can be cured while suppressing the reactivity in the cross-linking formation step.

  In the above configuration, the thermal crosslinking agent is preferably at least one selected from the group consisting of an epoxy thermal crosslinking agent, a phenol thermal crosslinking agent, and an acid anhydride thermal crosslinking agent.

  When the thermal crosslinking agent is at least one selected from the group consisting of an epoxy thermal crosslinking agent, a phenol thermal crosslinking agent, and an acid anhydride thermal crosslinking agent, a high cohesive force can be obtained, and in reflow evaluation High heat resistance can be obtained.

  The die bond film with a dicing sheet according to the present invention is characterized in that the die bond film is provided on a dicing sheet.

  In addition, a semiconductor device according to the present invention is manufactured using the above-described die bond film with a dicing sheet.

In addition, a method for manufacturing a semiconductor device according to the present invention includes:
Preparing a die-bonding film with a dicing sheet as described above;
A bonding step of bonding the die bond film of the die bond film with the dicing sheet and the back surface of the semiconductor wafer;
Dicing the semiconductor wafer together with the die bond film to form a chip-shaped semiconductor chip; and
A pick-up step of picking up the semiconductor chip together with the die-bonding film from the die-bonding film with the dicing sheet;
A die bonding step of die-bonding the semiconductor chip on an adherend via the die-bonding film; and a sealing step of sealing the semiconductor chip with a sealing resin after the die bonding step.

According to the above configuration, since the die-bonding film with the dicing sheet is used, even if a void is generated in the die-bonding process, it is dispersed in the resin without being expanded by the pressure in the sealing process, and looks It can disappear. As a result, the influence of voids can be reduced.
Further, the difference (E′2−E′1) between the E′1 and the storage elastic modulus E′2 at 150 ° C. after heating at 150 ° C. for 1 hour is 5 MPa or less, and the thermal history before the sealing step Therefore, it has the property of not becoming hard. Therefore, even after a long thermal history due to the multi-stage chip etc., the void can be visually disappeared by the pressure in the sealing process. As a result, the influence of voids can be reduced.

It is a cross-sectional schematic diagram which shows the die-bonding film with a dicing sheet which concerns on one Embodiment of this invention. It is a cross-sectional schematic diagram for demonstrating one manufacturing method of the semiconductor device which concerns on this embodiment.

(Die bond film with dicing sheet)
The die bond film which concerns on one Embodiment of this invention, and the die bond film with a dicing sheet are demonstrated below. The die bond film which concerns on this embodiment can mention the thing of the state in which the dicing sheet is not bonded together in the die bond film with a dicing sheet demonstrated below. Therefore, hereinafter, a die bond film with a dicing sheet will be described, and the die bond film will be described therein. FIG. 1 is a schematic cross-sectional view showing a die bond film with a dicing sheet according to an embodiment of the present invention.

  As shown in FIG. 1, the die bond film 10 with a dicing sheet has a configuration in which a die bond film 16 is laminated on a dicing sheet 11. The dicing sheet 11 is configured by laminating an adhesive layer 14 on a substrate 12, and the die bond film 16 is provided on the adhesive layer 14.

  In the present embodiment, the dicing sheet 11 will be described with respect to the case where there is a portion 14b that is not covered with the die bond film 16, but the dicing film with a dicing sheet according to the present invention is not limited to this example. A die bond film may be laminated on the dicing sheet so as to cover the entire dicing sheet.

The die bond film 16 has a storage elastic modulus E′1 at 150 ° C. before heat treatment of 0.1 MPa to 10 MPa, preferably 0.2 MPa to 8 MPa, and more preferably 0.2 MPa to 5 MPa. .
In addition, the die bond film 16 has a difference (E′2−E′1) between the E′1 and the storage elastic modulus E′2 at 150 ° C. after heating at 150 ° C. for 1 hour is 5 MPa or less, and 4 MPa or less. It is preferable that it is 3 MPa or less.
The die bond film 16 has a storage elastic modulus E′1 at 150 ° C. before heat treatment of 10 MPa or less, and is relatively flexible. Therefore, even if a void occurs in the die bonding process, it is dispersed in the resin without being expanded by the pressure in the sealing process (the process of sealing the semiconductor chip with the sealing resin) and disappears visually. be able to. As a result, the influence of voids can be reduced.
Further, the die bond film 16 has a property that the difference (E′2−E′1) is 5 MPa or less, and is hard to be hardened by a thermal history before the sealing step. Therefore, even after a long thermal history due to the multi-stage chip etc., the void can be visually disappeared by the pressure in the sealing process. As a result, the influence of voids can be reduced.
Moreover, since the storage elastic modulus E'1 in 150 degreeC before heat processing is 0.1 Mpa or more, the die-bonding film 16 can prevent a chip | tip from cracking at the time of wire bonding.
The E′1 and the E′2 can be controlled by the material constituting the die bond film 16. For example, it can be controlled by appropriately selecting the type and content of the thermoplastic resin constituting the die bond film 16 and the type and content of the thermal crosslinking agent.

The die bond film 16 preferably has a ratio of E′1 to E′2 (E′1 / E′2) of 0.2 to 1, more preferably 0.3 to 1.0. Preferably, it is 0.4-1.0.
When the ratio (E′1 / E′2) is 0.2 or more, it has a property of becoming harder due to the thermal history before the sealing step. Therefore, even after a long thermal history due to the multi-stage chip etc., the void can be visually disappeared by the pressure in the sealing process. As a result, the influence of voids can be further reduced.

The die bond film 16 has a difference (E ″ 2-E) between a loss elastic modulus E ″ 1 at 150 ° C. before heat treatment and a loss elastic modulus E ″ 2 at 150 ° C. after heating at 150 ° C. for 1 hour. '' 1) is preferably 1 MPa or less, and more preferably 0.5 MPa or less.
The die bond film 16 preferably has a ratio (E ″ 1 / E ″ 2) of E ″ 1 to E ″ 2 of 0.2 to 1, preferably 0.3 to 1. More preferably, it is more preferably 0.4-1.
When the difference (E ″ 2-E ″ 1) of the die bond film 16 is 1 MPa or less and the ratio (E ″ 1 / E ″ 2) is 0.2 or more, a sealing step Due to previous thermal history, it has the property of becoming harder. Therefore, even after a long thermal history due to the multi-stage chip etc., the void can be visually disappeared by the pressure in the sealing process. As a result, the influence of voids can be further reduced.
The E ″ 1 and the E ″ 2 can be controlled by the material constituting the die bond film 16. For example, it can be controlled by appropriately selecting the type and content of the thermoplastic resin constituting the die bond film 16 and the type and content of the thermal crosslinking agent.

The die bond film 16 preferably has an E ″ 1 (loss elastic modulus E ″ 1 at 150 ° C. before heat treatment) of 0.01 MPa to 2 MPa, and preferably 0.05 MPa to 1.5 MPa. More preferably, it is 0.1 MPa-1 MPa.
When the loss elastic modulus E ″ 1 at 150 ° C. before the heat treatment of the die bond film 16 is 2 MPa or less, the die bond film 16 has more flexibility. Therefore, even if a void occurs in the die bonding process, it is dispersed in the resin without being expanded by the pressure in the sealing process (the process of sealing the semiconductor chip with the sealing resin) and disappears visually. be able to. As a result, the influence of voids can be further reduced.
Moreover, the chip | tip crack in a wire bonding process can be prevented as the loss elastic modulus E''1 in 150 degreeC before the heat processing of the die-bonding film 16 is 0.01 Mpa or more.

The die bond film 16 preferably has a difference between the peak temperature of the loss tangent tan δ1 before heat treatment and the peak temperature of the loss tangent tan δ2 after heating at 150 ° C. for 1 hour (tan δ2−tan δ1) within 10 ° C. Is more preferable, and it is more preferable that the temperature is within 6 ° C.
When the difference (tan δ2−tan δ1) is within 10 ° C., the reaction hardly occurs due to the thermal history before the sealing step. Therefore, even after a long thermal history due to the multi-stage chip, etc., the flexible state can be maintained, and the void can be apparently disappeared by the pressure in the sealing process. As a result, the influence of voids can be further reduced.
The peak temperature of the loss tangent tan δ 1 and the peak temperature of the loss tangent tan δ 2 can be controlled by the material constituting the die bond film 16. For example, it can be controlled by appropriately selecting the type and content of the thermoplastic resin constituting the die bond film 16 and the type and content of the thermal crosslinking agent.

The die bond film 16 has a ratio (L2 / L1) of a tensile breaking elongation L1 at 25 ° C. before heat treatment to a tensile breaking elongation L2 at 25 ° C. after heating at 150 ° C. for 1 hour is 0.5 to 1. Is preferably 0.0, more preferably 0.6 to 1.0, and still more preferably 0.7 to 1.0.
When the ratio (L2 / L1) is 0.5 or more, even if a certain amount of heat is applied, there is little change in the tensile elongation at break. Therefore, it has the property that reaction is less likely to occur due to the thermal history before the sealing step. Therefore, even after a long thermal history due to the multi-stage chip, etc., the flexible state can be maintained, and the void can be apparently disappeared by the pressure in the sealing process. As a result, the influence of voids can be further reduced.
The L1 and the L2 can be controlled by the material constituting the die bond film 16. For example, it can be controlled by appropriately selecting the type and content of the thermoplastic resin constituting the die bond film 16 and the type and content of the thermal crosslinking agent.

  The L1 of the die bond film 16 is preferably 1500% or less, more preferably 1200% or less, and even more preferably 1000% or less. When the L1 of the die-bonding film 16 is 1500% or less, the die-bonding film 16 is rich in flexibility, and the void can be visually disappeared by the pressure in the sealing process. The method for measuring the tensile elongation at break is according to the method described in the examples.

  Examples of the material constituting the die bond film 16 include thermoplastic resins.

  Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, heat Examples thereof include plastic polyimide resins, polyamide resins such as 6-nylon and 6,6-nylon, phenoxy resins, acrylic resins, saturated polyester resins such as PET and PBT, polyamideimide resins, and fluorine resins. These thermoplastic resins can be used alone or in combination of two or more. Among these thermoplastic resins, an acrylic resin that has few ionic impurities and high heat resistance and can ensure the reliability of the semiconductor chip is particularly preferable.

  The acrylic resin is not particularly limited, and an ester of acrylic acid or an ester of methacrylic acid (alkyl acrylate, or having a linear or branched alkyl group having 30 to 30 carbon atoms, particularly 4 to 18 carbon atoms, or Examples thereof include polymers (acrylic copolymers) containing one or more of (alkyl methacrylate) as a component. Examples of the alkyl group include a methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, t-butyl group, isobutyl group, amyl group, isoamyl group, hexyl group, heptyl group, cyclohexyl group, 2- Examples include an ethylhexyl group, an octyl group, an isooctyl group, a nonyl group, an isononyl group, a decyl group, an isodecyl group, an undecyl group, a lauryl group, a tridecyl group, a tetradecyl group, a stearyl group, an octadecyl group, and a dodecyl group.

  In addition, the other monomer forming the polymer is not particularly limited, and examples thereof include acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Carboxyl group-containing monomers such as acid anhydride monomers such as maleic anhydride or itaconic anhydride, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4- (meth) acrylic acid 4- Hydroxybutyl, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate or (4-hydroxymethylcyclohexyl) -Methyla Hydroxyl group-containing monomers such as relate, styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropane sulfonic acid, (meth) acrylamide propane sulfonic acid, sulfopropyl (meth) acrylate or (meth) Examples thereof include sulfonic acid group-containing monomers such as acryloyloxynaphthalenesulfonic acid, phosphoric acid group-containing monomers such as 2-hydroxyethylacryloyl phosphate, and acrylonitrile.

Among them, the die bond film 16 is obtained by polymerizing a monomer raw material containing alkyl acrylate or alkyl methacrylate and 1% by weight to 30% by weight of acrylonitrile, and has an epoxy group or a carboxyl group as a functional group. It is preferable to contain an acrylic copolymer having The content of the acrylonitrile in the monomer raw material is more preferably 5% by weight to 30% by weight, and further preferably 7% by weight to 30% by weight. When an acrylic copolymer having an epoxy group or a carboxyl group is contained as a functional group, crosslinking can be formed by the functional group by heating in the crosslinking formation step. Moreover, the cohesive force in a bridge | crosslinking formation process can be improved as the said acrylic copolymer is a thing obtained by superposing | polymerizing the monomer raw material containing acrylonitrile. As a result, the adhesive force after the cross-linking formation step can be improved. Moreover, a softness | flexibility can be provided as the said acrylic copolymer is a thing obtained by superposing | polymerizing the monomer raw material containing alkyl acrylate or alkyl methacrylate.
When it has an epoxy group as a functional group, it is preferable that the content rate of an epoxy group is 0.2 eq / kg-1.0 eq / kg from a softness | flexibility after bridge | crosslinking and a heat resistant viewpoint.
Moreover, when it has a carboxyl group as a functional group, it is preferable that the content rate of a carboxyl group is 2 mgKOH / g-50 mgKOH / g from a softness | flexibility after bridge | crosslinking and a heat resistant viewpoint.

  The blending ratio of the thermoplastic resin is not particularly limited, but is preferably 85% by weight or more and more preferably 88% by weight or more based on the whole organic resin composition from the viewpoint of imparting flexibility. preferable. Further, from the viewpoint of imparting heat resistance, the content is preferably 100% by weight or less, more preferably 98% by weight or less, based on the entire organic resin composition.

  The die bond film 16 preferably contains 0 to 15% by weight of a thermal crosslinking agent with respect to the entire organic resin composition. The content of the thermal crosslinking agent is more preferably 0 to 13% by weight and further preferably 0 to 11% by weight with respect to the entire organic resin composition. When the die bond film 16 contains 0 to 15% by weight of a thermal crosslinking agent with respect to the entire organic resin composition, the functional group of the thermoplastic resin and the crosslinked structure can be formed by heating in the crosslinking formation step. As a result, it can be cured while suppressing the reactivity in the cross-linking formation step. In this specification, the thermal cross-linking agent refers to an agent that forms a cross-linked structure with a functional group of a thermoplastic resin.

  Specific examples of the thermal crosslinking agent include an epoxy resin, a phenol resin, and an acid anhydride. However, when adding a plurality of types of thermal cross-linking agents, it is preferable that the thermal cross-linking agent is selected so as to suitably form a cross-linked structure with the functional group of the thermoplastic resin, so that the thermal cross-linking agents do not react with each other. It is preferable to select. When the thermal crosslinking agent is at least one selected from the group consisting of an epoxy thermal crosslinking agent, a phenol thermal crosslinking agent, and an acid anhydride thermal crosslinking agent, a high cohesive force can be obtained, and in reflow evaluation High heat resistance can be obtained.

  The epoxy resin is not particularly limited. For example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac Type, ortho-cresol novolak type, trishydroxyphenylmethane type, tetraphenylolethane type, etc. bifunctional epoxy resin or polyfunctional epoxy resin, or hydantoin type, trisglycidyl isocyanurate type, glycidylamine type epoxy resin, etc. Can do. These can be used alone or in combination of two or more.

  The phenol resin is not particularly limited, and examples thereof include phenol novolac resins, phenol aralkyl resins, cresol novolac resins, tert-butylphenol novolac resins, nonylphenol novolak resins and the like, novolac type phenol resins, resol type phenol resins, polyparaoxystyrene, and the like. Examples include polyoxystyrene. These can be used alone or in combination of two or more.

  The acid anhydride is not particularly limited, and examples thereof include phthalic anhydride, pyromellitic anhydride, trimellitic anhydride, maleic anhydride and the like. These can be used alone or in combination of two or more.

  Moreover, a filler can be suitably mix | blended with the die-bonding film 16 according to the use. The blending of the filler makes it possible to impart conductivity, improve thermal conductivity, adjust the elastic modulus, and the like. Examples of the filler include inorganic fillers and organic fillers, and inorganic fillers are preferable from the viewpoints of characteristics such as improvement in handleability, improvement in thermal conductivity, adjustment of melt viscosity, and imparting thixotropic properties. The inorganic filler is not particularly limited, and examples thereof include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, and aluminum borate whisker. , Boron nitride, crystalline silica, amorphous silica and the like. These can be used alone or in combination of two or more. From the viewpoint of improving thermal conductivity, aluminum oxide, aluminum nitride, boron nitride, crystalline silica, and amorphous silica are preferable. Further, from the viewpoint that the above properties are well balanced, crystalline silica or amorphous silica is preferable. In addition, a conductive substance (conductive filler) may be used as the inorganic filler for the purpose of imparting conductivity and improving thermal conductivity. Examples of the conductive filler include metal powder in which silver, aluminum, gold, cylinder, nickel, conductive alloy and the like are made into a spherical shape, needle shape and flake shape, metal oxide such as alumina, amorphous carbon black, graphite and the like.

  It is preferable that the die bond film 16 contains substantially no thermal crosslinking catalyst. The phrase “substantially not containing a thermal crosslinking catalyst” means a case where it is not contained or contained at 0.05% by weight or less with respect to the entire die bond film 16 even if it is contained. If the die bond film 16 does not substantially contain a thermal crosslinking catalyst, it is possible to prevent the formation of a crosslinked structure from proceeding due to the thermal history before the sealing step.

  Examples of the thermal crosslinking catalyst that can be used include an amine thermal crosslinking catalyst, a phosphorus thermal crosslinking catalyst, an imidazole thermal crosslinking catalyst, a boron thermal crosslinking catalyst, and a phosphorus-boron thermal crosslinking catalyst.

  Examples of the amine thermal crosslinking catalyst include monoethanolamine trifluoroborate (manufactured by Stella Chemifa Corporation), dicyandiamide (manufactured by Nacalai Tesque Corporation), and the like.

  Examples of the phosphorus-based thermal crosslinking catalyst include triorganophosphine such as triphenylphosphine, tributylphosphine, tri (p-methylphenyl) phosphine, tri (nonylphenyl) phosphine, diphenyltolylphosphine, and tetraphenylphosphonium. Bromide (trade name; TPP-PB), methyltriphenylphosphonium (trade name; TPP-MB), methyltriphenylphosphonium chloride (trade name; TPP-MC), methoxymethyltriphenylphosphonium (trade name; TPP-MOC) And benzyltriphenylphosphonium chloride (trade name; TPP-ZC) and the like (all manufactured by Hokuko Chemical Co., Ltd.).

  Examples of the imidazole-based thermal crosslinking catalyst include 2-methylimidazole (trade name; 2MZ), 2-undecylimidazole (trade name; C11-Z), 2-heptadecylimidazole (trade name; C17Z), and 1,2- Dimethylimidazole (trade name; 1.2 DMZ), 2-ethyl-4-methylimidazole (trade name; 2E4MZ), 2-phenylimidazole (trade name; 2PZ), 2-phenyl-4-methylimidazole (trade name; 2P4MZ) ), 1-benzyl-2-methylimidazole (trade name; 1B2MZ), 1-benzyl-2-phenylimidazole (trade name; 1B2PZ), 1-cyanoethyl-2-methylimidazole (trade name; 2MZ-CN), 1 -Cyanoethyl-2-undecylimidazole (trade name; C11Z-CN), 1-cyano Tyl-2-phenylimidazolium trimellitate (trade name; 2PZCNS-PW), 2,4-diamino-6- [2'-methylimidazolyl- (1 ')]-ethyl-s-triazine (trade name; 2MZ -A), 2,4-diamino-6- [2'-undecylimidazolyl- (1 ')]-ethyl-s-triazine (trade name; C11Z-A), 2,4-diamino-6- [2 '-Ethyl-4'-methylimidazolyl- (1')]-ethyl-s-triazine (trade name; 2E4MZ-A), 2,4-diamino-6- [2'-methylimidazolyl- (1 ')] -Ethyl-s-triazine isocyanuric acid adduct (trade name; 2MA-OK), 2-phenyl-4,5-dihydroxymethylimidazole (trade name; 2PHZ-PW), 2-phenyl-4-methyl-5 Hydroxymethylimidazole (trade name; 2P4MHZ-PW), and the like (all manufactured by Shikoku Chemicals Corporation).

  The boron-based thermal crosslinking catalyst is not particularly limited, and examples thereof include trichloroborane.

  The phosphorus-boron thermal crosslinking catalyst is not particularly limited, and examples thereof include tetraphenylphosphonium tetraphenylborate (trade name; TPP-K), tetraphenylphosphonium tetra-p-triborate (trade name; TPP-MK), and benzyl. Examples include triphenylphosphonium tetraphenylborate (trade name; TPP-ZK), triphenylphosphine triphenylborane (trade name; TPP-S), and the like (all manufactured by Hokuko Chemical Co., Ltd.).

The average particle size of the filler is preferably 0.01 to 0.9 μm, and more preferably 0.05 to 0.7 μm. By setting the average particle size of the filler to 0.01 μm or more, the flexibility of the die bond film can be ensured. Moreover, the jumping-out of the filler from a die-bonding film can be prevented by setting it as 0.9 micrometer or less. In addition, the average particle diameter of a filler is the value calculated | required, for example with the photometric type particle size distribution analyzer (The product made from HORIBA, apparatus name; LA-910).
The amount of the filler added is preferably 0 to 80% by weight and more preferably 0 to 60% by weight with respect to the entire die bond film 16.

  In addition to the said filler, another additive can be suitably mix | blended with the die-bonding film 16 as needed. Examples of other additives include flame retardants, silane coupling agents, ion trapping agents, and the like. Examples of the flame retardant include antimony trioxide, antimony pentoxide, brominated epoxy resin, and the like. These can be used alone or in combination of two or more. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, and the like. These compounds can be used alone or in combination of two or more. Examples of the ion trapping agent include hydrotalcites and bismuth hydroxide. These can be used alone or in combination of two or more.

  Although the thickness (in the case of a laminated body) of the die-bonding film 16 is not specifically limited, 5-100 micrometers is preferable, More preferably, it is 5-60 micrometers, More preferably, it is 5-30 micrometers.

  As described above, the dicing sheet 11 has a configuration in which the pressure-sensitive adhesive layer 14 is laminated on the substrate 12.

  The base material 12 serves as a strength matrix of the die bond film 10 with a dicing sheet. For example, polyolefins such as low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolyprolene, polybutene, polymethylpentene, ethylene-acetic acid Vinyl copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene-butene copolymer, ethylene-hexene copolymer, Polyester such as polyurethane, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyetheretherketone, polyetherimide, polyamide, wholly aromatic polyamide, polyphenylsulfide, aramid (Paper), glass, glass cloth, fluorine resin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, silicone resin, metal (foil), or the like. When the adhesive layer 14 described later is formed of a radiation curable adhesive, the base material 12 is preferably formed of a material that transmits the radiation.

  The surface of the substrate 12 is chemically treated by conventional surface treatments such as chromic acid treatment, ozone exposure, flame exposure, high-voltage impact exposure, ionizing radiation treatment, etc., in order to improve adhesion and retention with adjacent layers. Alternatively, a physical treatment or a coating treatment with a primer (for example, an adhesive substance described later) can be performed. As the base material 12, the same kind or different kinds can be appropriately selected and used, and a blend of several kinds of materials can be used as necessary.

  The thickness of the substrate 12 is not particularly limited and can be determined as appropriate, but is generally about 5 to 200 μm.

  It does not restrict | limit especially as an adhesive used for formation of the adhesive layer 14, For example, common pressure sensitive adhesives, such as an acrylic adhesive and a rubber adhesive, can be used. The pressure-sensitive adhesive is an acrylic pressure-sensitive adhesive based on an acrylic polymer from the standpoint of cleanability with an organic solvent such as ultrapure water or alcohol for electronic components that are resistant to contamination such as semiconductor wafers and glass. Is preferred.

  Examples of the acrylic polymer include (meth) acrylic acid alkyl esters (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, Isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, hexadecyl ester , Octadecyl esters, eicosyl esters, etc., alkyl groups having 1 to 30 carbon atoms, especially 4 to 18 carbon linear or branched alkyl esters, etc.) and Meth) acrylic acid cycloalkyl esters (e.g., cyclopentyl ester, acrylic polymers such as one or more was used as a monomer component of the cyclohexyl ester etc.). In addition, (meth) acrylic acid ester means acrylic acid ester and / or methacrylic acid ester, and (meth) of the present invention has the same meaning.

  The acrylic polymer contains units corresponding to other monomer components copolymerizable with the (meth) acrylic acid alkyl ester or cycloalkyl ester, if necessary, for the purpose of modifying cohesive force, heat resistance and the like. You may go out. Examples of such monomer components include, for example, carboxyl group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid; maleic anhydride Acid anhydride monomers such as itaconic anhydride; 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate Hydroxyl group-containing monomers such as 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, (4-hydroxymethylcyclohexyl) methyl (meth) acrylate; Styrene Contains sulfonic acid groups such as phonic acid, allylsulfonic acid, 2- (meth) acrylamide-2-methylpropanesulfonic acid, (meth) acrylamidepropanesulfonic acid, sulfopropyl (meth) acrylate, (meth) acryloyloxynaphthalenesulfonic acid Monomers; Phosphoric acid group-containing monomers such as 2-hydroxyethyl acryloyl phosphate; acrylamide, acrylonitrile and the like. One or more of these copolymerizable monomer components can be used. The amount of these copolymerizable monomers used is preferably 40% by weight or less based on the total monomer components.

  Furthermore, since the acrylic polymer is crosslinked, a polyfunctional monomer or the like can be included as a monomer component for copolymerization as necessary. Examples of such polyfunctional monomers include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, Pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate, polyester (meth) acrylate, urethane (meth) An acrylate etc. are mentioned. These polyfunctional monomers can also be used alone or in combination of two or more. The amount of the polyfunctional monomer used is preferably 30% by weight or less of the total monomer components from the viewpoint of adhesive properties and the like.

  The acrylic polymer can be obtained by subjecting a single monomer or a mixture of two or more monomers to polymerization. The polymerization can be performed by any method such as solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization and the like. From the viewpoint of preventing contamination of a clean adherend, the content of the low molecular weight substance is preferably small. From this point, the number average molecular weight of the acrylic polymer is preferably 100,000 or more, more preferably about 200,000 to 3,000,000, and particularly preferably about 300,000 to 1,000,000.

  In addition, an external cross-linking agent can be appropriately employed for the pressure-sensitive adhesive in order to increase the number average molecular weight of an acrylic polymer as a base polymer. Specific examples of the external crosslinking method include a method of adding a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, a melamine crosslinking agent, and reacting them. When using an external cross-linking agent, the amount used is appropriately determined depending on the balance with the base polymer to be cross-linked, and further depending on the intended use as an adhesive. In general, about 5 parts by weight or less, further 0.1 to 5 parts by weight is preferably blended with respect to 100 parts by weight of the base polymer. Furthermore, you may use additives, such as conventionally well-known various tackifiers and anti-aging agent, other than the said component as needed to an adhesive.

  The pressure-sensitive adhesive layer 14 may be formed of a radiation curable pressure-sensitive adhesive. A radiation-curable pressure-sensitive adhesive can easily reduce its adhesive strength by increasing the degree of crosslinking by irradiation with radiation such as ultraviolet rays.

For example, by curing the radiation-curing pressure-sensitive adhesive layer 14 in accordance with the wafer attachment portion 16a of the die bond film 16 shown in FIG. 1, the portion 14a having a significantly reduced adhesive force can be easily formed. Since the die bond film 16 is affixed to the portion 14a that has been cured and has reduced adhesive strength, the interface between the portion 14a of the pressure-sensitive adhesive layer 14 and the die bond film 16 has a property of being easily peeled off during pickup. On the other hand, the portion not irradiated with radiation has a sufficient adhesive force, and forms the portion 14b. A wafer ring can be firmly fixed to the portion 14b.
In addition, when laminating | stacking a die-bonding film on a dicing sheet so that the whole dicing sheet may be covered, a wafer ring can be fixed to the outer peripheral part of a die-bonding film.

  As the radiation-curable pressure-sensitive adhesive, those having a radiation-curable functional group such as a carbon-carbon double bond and exhibiting adhesiveness can be used without particular limitation. As the radiation curable pressure sensitive adhesive, for example, an addition type radiation curable pressure sensitive adhesive in which a radiation curable monomer component or an oligomer component is blended with a general pressure sensitive pressure sensitive adhesive such as an acrylic pressure sensitive adhesive or a rubber pressure sensitive adhesive. An agent can be illustrated.

  Examples of the radiation curable monomer component to be blended include urethane oligomer, urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, tetramethylolmethane tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, and pentaerythritol. Examples include stall tetra (meth) acrylate, dipentaerystol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1,4-butanediol di (meth) acrylate, and the like. Examples of the radiation curable oligomer component include various oligomers such as urethane, polyether, polyester, polycarbonate, and polybutadiene, and those having a molecular weight in the range of about 100 to 30,000 are suitable. The compounding amount of the radiation-curable monomer component or oligomer component can be appropriately determined in accordance with the type of the pressure-sensitive adhesive layer, and the amount capable of reducing the adhesive strength of the pressure-sensitive adhesive layer. Generally, the amount is, for example, about 5 to 500 parts by weight, preferably about 40 to 150 parts by weight with respect to 100 parts by weight of the base polymer such as an acrylic polymer constituting the pressure-sensitive adhesive.

  In addition to the additive-type radiation curable adhesive described above, the radiation curable pressure-sensitive adhesive has a carbon-carbon double bond in the polymer side chain or main chain or at the main chain terminal as a base polymer. Intrinsic radiation curable pressure sensitive adhesives using Intrinsic radiation curable adhesives do not need to contain oligomer components, which are low molecular components, or do not contain many, so the oligomer components do not move through the adhesive over time and are stable. This is preferable because an adhesive layer having a layered structure can be formed.

  As the base polymer having a carbon-carbon double bond, those having a carbon-carbon double bond and having adhesiveness can be used without particular limitation. As such a base polymer, those having an acrylic polymer as a basic skeleton are preferable. Examples of the basic skeleton of the acrylic polymer include the acrylic polymers exemplified above.

  The method for introducing the carbon-carbon double bond into the acrylic polymer is not particularly limited, and various methods can be adopted, but it is easy in terms of molecular design to introduce the carbon-carbon double bond into the polymer side chain. It is. For example, after a monomer having a functional group is previously copolymerized with an acrylic polymer, a compound having a functional group capable of reacting with the functional group and a carbon-carbon double bond is converted into a radiation curable carbon-carbon double bond. A method of performing condensation or addition reaction while maintaining the above.

  Examples of combinations of these functional groups include carboxylic acid groups and epoxy groups, carboxylic acid groups and aziridyl groups, hydroxyl groups and isocyanate groups, and the like. Among these combinations of functional groups, a combination of a hydroxyl group and an isocyanate group is preferable because of easy tracking of the reaction. Moreover, the functional group may be on either side of the acrylic polymer and the compound as long as the acrylic polymer having the carbon-carbon double bond is generated by a combination of these functional groups. In the preferable combination, it is preferable that the acrylic polymer has a hydroxyl group and the compound has an isocyanate group. In this case, examples of the isocyanate compound having a carbon-carbon double bond include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl-α, α-dimethylbenzyl isocyanate, and the like. Further, as the acrylic polymer, those obtained by copolymerizing the above-exemplified hydroxy group-containing monomers, ether compounds of 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl ether, or the like are used.

  As the intrinsic radiation curable pressure-sensitive adhesive, the base polymer (particularly acrylic polymer) having the carbon-carbon double bond can be used alone, but the radiation curable monomer does not deteriorate the characteristics. Components and oligomer components can also be blended. The radiation-curable oligomer component or the like is usually in the range of 30 parts by weight, preferably in the range of 0 to 10 parts by weight with respect to 100 parts by weight of the base polymer.

  The radiation curable pressure-sensitive adhesive contains a photopolymerization initiator when cured by ultraviolet rays or the like. Examples of the photopolymerization initiator include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α′-dimethylacetophenone, 2-methyl-2-hydroxypropio Α-ketol compounds such as phenone and 1-hydroxycyclohexyl phenyl ketone; methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1- [4- ( Acetophenone compounds such as methylthio) -phenyl] -2-morpholinopropane-1; benzoin ether compounds such as benzoin ethyl ether, benzoin isopropyl ether and anisoin methyl ether; ketal compounds such as benzyldimethyl ketal; 2-naphthalenesulfonyl Black Aromatic sulfonyl chloride compounds such as 1; photoactive oxime compounds such as 1-phenone-1,1-propanedione-2- (o-ethoxycarbonyl) oxime; benzophenone, benzoylbenzoic acid, 3,3′-dimethyl Benzophenone compounds such as -4-methoxybenzophenone; thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2 Thioxanthone compounds such as 1,4-diethylthioxanthone and 2,4-diisopropylthioxanthone; camphorquinone; halogenated ketone; acyl phosphinoxide; acyl phosphonate. The compounding quantity of a photoinitiator is about 0.05-20 weight part with respect to 100 weight part of base polymers, such as an acryl-type polymer which comprises an adhesive.

  Examples of radiation curable pressure-sensitive adhesives include photopolymerizable compounds such as addition polymerizable compounds having two or more unsaturated bonds and alkoxysilanes having an epoxy group disclosed in JP-A-60-196956. And a rubber-based pressure-sensitive adhesive and an acrylic pressure-sensitive adhesive containing a photopolymerization initiator such as a carbonyl compound, an organic sulfur compound, a peroxide, an amine, and an onium salt-based compound.

  The radiation curable pressure-sensitive adhesive layer 14 may contain a compound that is colored by irradiation with radiation, if necessary. By including the compound to be colored in the pressure-sensitive adhesive layer 14 by irradiation, only the irradiated portion can be colored. That is, the portion 14a corresponding to the wafer pasting portion 16a shown in FIG. 1 can be colored. Therefore, it can be immediately determined by visual observation whether the adhesive layer 14 has been irradiated with radiation, the wafer pasting portion 16a can be easily recognized, and the workpieces can be easily pasted together. In addition, when detecting a semiconductor chip by an optical sensor or the like, the detection accuracy is increased, and no malfunction occurs when the semiconductor chip is picked up.

  A compound that is colored by radiation irradiation is a compound that is colorless or light-colored before radiation irradiation, but becomes colored by radiation irradiation. Preferable specific examples of such compounds include leuco dyes. As the leuco dye, conventional triphenylmethane, fluoran, phenothiazine, auramine, and spiropyran dyes are preferably used. Specifically, 3- [N- (p-tolylamino)]-7-anilinofluorane, 3- [N- (p-tolyl) -N-methylamino] -7-anilinofluorane, 3- [ N- (p-tolyl) -N-ethylamino] -7-anilinofluorane, 3-diethylamino-6-methyl-7-anilinofluorane, crystal violet lactone, 4,4 ', 4 "-trisdimethyl Examples include aminotriphenylmethanol, 4,4 ′, 4 ″ -trisdimethylaminotriphenylmethane, and the like.

  Developers preferably used together with these leuco dyes include conventionally used initial polymers of phenol formalin resins, aromatic carboxylic acid derivatives, electron acceptors such as activated clay, and further change the color tone. In some cases, various known color formers can be used in combination.

  Such a compound that is colored by irradiation with radiation may be once dissolved in an organic solvent or the like and then included in the radiation-curable adhesive, or may be finely powdered and included in the pressure-sensitive adhesive. The use ratio of this compound is 10% by weight or less in the pressure-sensitive adhesive layer 14, preferably 0.01 to 10% by weight, more preferably 0.5 to 5% by weight. If the ratio of the compound exceeds 10% by weight, the radiation applied to the pressure-sensitive adhesive layer 14 is excessively absorbed by the compound, so that the portion 14a of the pressure-sensitive adhesive layer 14 is not sufficiently cured, and is sufficiently sticky. Power may not decrease. On the other hand, in order to sufficiently color, it is preferable that the ratio of the compound is 0.01% by weight or more.

  In the case where the pressure-sensitive adhesive layer 14 is formed of a radiation curable pressure-sensitive adhesive, a part of the pressure-sensitive adhesive layer 14 so that the pressure-sensitive adhesive force of the portion 14a in the pressure-sensitive adhesive layer 14 <the pressure-sensitive adhesive strength of the other portion 14b. May be irradiated.

  Examples of the method for forming the portion 14a on the pressure-sensitive adhesive layer 14 include a method in which after the radiation-curable pressure-sensitive adhesive layer 14 is formed on the substrate 12, the portion 14a is partially irradiated with radiation to be cured. The partial radiation irradiation can be performed through a photomask in which a pattern corresponding to a portion other than the die-bonding film 16 wafer attaching portion 16a is formed. Moreover, the method etc. of irradiating and irradiating a spot radiation are mentioned. The radiation-curable pressure-sensitive adhesive layer 14 can be formed by transferring what is provided on the separator onto the substrate 12. Partial radiation curing can also be performed on the radiation curable pressure-sensitive adhesive layer 14 provided on the separator.

  In the case where the pressure-sensitive adhesive layer 14 is formed of a radiation curable pressure-sensitive adhesive, all or a part of the base material 12 other than the part corresponding to the wafer bonding part 16a is shielded from light. It is possible to form the portion 14a having a reduced adhesive force by forming a radiation-curing pressure-sensitive adhesive layer 14 and then irradiating it with radiation to cure the portion corresponding to the wafer pasting portion 16a. As a light shielding material, what can become a photomask on a support film can be prepared by printing, vapor deposition, or the like. According to this manufacturing method, the die-bonding film 10 with a dicing sheet can be manufactured efficiently.

  In the case where curing inhibition by oxygen occurs during irradiation, it is desirable to block oxygen (air) from the surface of the radiation curable pressure-sensitive adhesive layer 14 by some method. For example, a method of covering the surface of the pressure-sensitive adhesive layer 14 with a separator, a method of irradiating ultraviolet rays or the like in a nitrogen gas atmosphere, and the like can be mentioned.

  The thickness of the pressure-sensitive adhesive layer 14 is not particularly limited, but is preferably about 1 to 50 μm from the viewpoint of preventing chipping of the chip cut surface and compatibility of fixing and holding the die bond film 16. Preferably it is 2-30 micrometers, Furthermore, 5-25 micrometers is preferable.

  The die bond film 16 of the die bond film with a dicing sheet 10 is preferably protected by a separator (not shown). The separator has a function as a protective material for protecting the die bond film 16 until it is put into practical use. Further, the separator can be used as a support base material when the die bond film 16 is transferred to the pressure-sensitive adhesive layer 14. The separator is peeled off when a workpiece (semiconductor wafer) is stuck on the die bond film 16 of the die bond film 10 with a dicing sheet. As the separator, a plastic film or paper surface-coated with a release agent such as polyethylene terephthalate (PET), polyethylene, polypropylene, a fluorine release agent, or a long-chain alkyl acrylate release agent can be used.

The die-bonding film 10 with a dicing sheet according to the present embodiment is produced, for example, as follows.
First, the base material 12 can be formed by a conventionally known film forming method. Examples of the film forming method include a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, and a dry lamination method.

  Next, after a pressure-sensitive adhesive composition solution is applied onto the substrate 12 to form a coating film, the coating film is dried under predetermined conditions (heat-crosslinked as necessary), and the pressure-sensitive adhesive layer 14 is formed. Form. It does not specifically limit as a coating method, For example, roll coating, screen coating, gravure coating, etc. are mentioned. As drying conditions, for example, the drying temperature is 80 to 150 ° C. and the drying time is 0.5 to 5 minutes. Moreover, after apply | coating an adhesive composition on a separator and forming a coating film, the coating film may be dried on the said drying conditions, and the adhesive layer 14 may be formed. Then, the adhesive layer 14 is bonded together with the separator on the base material 12. Thereby, the dicing sheet 11 is produced.

The die bond film 16 is produced as follows, for example.
First, an adhesive composition solution that is a material for forming the die bond film 16 is prepared. As described above, the adhesive composition solution contains the resin and other additives as required.

  Next, the adhesive composition solution is applied onto the base separator so as to have a predetermined thickness to form a coating film, and then the coating film is dried under predetermined conditions to form the die bond film 16. It does not specifically limit as a coating method, For example, roll coating, screen coating, gravure coating, etc. are mentioned. As drying conditions, for example, the drying temperature is 70 to 160 ° C. and the drying time is 1 to 5 minutes. Moreover, after apply | coating adhesive composition solution on a separator and forming a coating film, the coating film may be dried on the said drying conditions, and the die-bonding film 16 may be formed. Then, an adhesive bond layer is bonded together with a separator on a base material separator.

  Subsequently, the separator is peeled off from each of the dicing sheet 11 and the die bond film 16, and both are bonded so that the adhesive layer 14 and the die bond film 16 become a bonding surface. Bonding can be performed by, for example, pressure bonding. At this time, the lamination temperature is not particularly limited, and is preferably 30 to 50 ° C., for example, and more preferably 35 to 45 ° C. Moreover, a linear pressure is not specifically limited, For example, 0.1-20 kgf / cm is preferable and 1-10 kgf / cm is more preferable. Thereby, the die-bonding film 10 with a dicing sheet is obtained.

(Method for manufacturing semiconductor device)
Next, a method for manufacturing a semiconductor device will be described.
Below, the manufacturing method of the semiconductor device using the die-bonding film 10 with a dicing sheet is demonstrated.

The method for manufacturing a semiconductor device according to the present embodiment includes a step of preparing the die bond film with a dicing sheet described above,
A bonding step of bonding the die bond film of the die bond film with the dicing sheet and the back surface of the semiconductor wafer;
Dicing the semiconductor wafer together with the die bond film to form a chip-shaped semiconductor chip; and
A pick-up step of picking up the semiconductor chip together with the die-bonding film from the die-bonding film with the dicing sheet;
A die-bonding step of die-bonding the semiconductor chip on an adherend via the die-bonding film and a sealing step of sealing the semiconductor chip with a sealing resin after the die-bonding step are included.

  In the method for manufacturing a semiconductor device according to the present embodiment, first, a die bond film with a dicing sheet 10 is prepared (preparing step). The die-bonding film 10 with a dicing sheet is used as follows by appropriately separating a separator arbitrarily provided on the die-bonding film 16. Below, the case where the die-bonding film 10 with a dicing sheet is used is demonstrated to an example, referring FIG.1 and FIG.2.

  First, the semiconductor wafer 4 is pressure-bonded onto the semiconductor wafer bonding portion 16a of the die bond film 16 in the die bond film 10 with a dicing sheet, and this is adhered and held and fixed (bonding step). This step is performed while pressing with a pressing means such as a pressure roll. The attaching temperature at the time of mounting is not specifically limited, For example, it is preferable to exist in the range of 40-90 degreeC. In this step, it is preferable to set conditions within a range that does not substantially involve a reaction of the die bond film 16 (for example, formation of a crosslinked structure).

  Next, the semiconductor wafer 4 is diced (dicing process). Thereby, the semiconductor wafer 4 is cut into a predetermined size and separated into individual pieces, and the semiconductor chip 5 is manufactured. The dicing method is not particularly limited. For example, the dicing is performed from the circuit surface side of the semiconductor wafer 4 according to a conventional method. Further, in this step, for example, a cutting method called full cut for cutting up to the die bond film 10 with a dicing sheet can be adopted. It does not specifically limit as a dicing apparatus used at this process, A conventionally well-known thing can be used. Further, since the semiconductor wafer 4 is bonded and fixed by the die bond film 10 with a dicing sheet, chip chipping and chip jump can be suppressed, and damage to the semiconductor wafer 4 can also be suppressed.

  Next, the semiconductor chip 5 is picked up in order to peel off the semiconductor chip 5 adhered and fixed to the die bond film 10 with a dicing sheet (pickup step). The pickup method is not particularly limited, and various conventionally known methods can be employed. For example, a method of pushing up each semiconductor chip 5 from the die bond film with dicing sheet 10 side with a needle and picking up the pushed semiconductor chip 5 with a pickup device, etc. can be mentioned.

  As pick-up conditions, the needle push-up speed is preferably 5 to 100 mm / sec, and more preferably 5 to 10 mm / sec in terms of preventing chipping.

  Here, when the pressure-sensitive adhesive layer 2 is a radiation curable type, the pickup is performed after the pressure-sensitive adhesive layer 2 is irradiated with radiation. Thereby, the adhesive force with respect to the die-bonding film 16 of the adhesive layer 2 falls, and peeling of the semiconductor chip 5 becomes easy. As a result, the pickup can be performed without damaging the semiconductor chip 5. Conditions such as irradiation intensity and irradiation time at the time of radiation irradiation are not particularly limited, and may be set as necessary. Moreover, a well-known thing can be used as a light source used for radiation irradiation. When the pressure-sensitive adhesive layer is irradiated with radiation and cured in advance and the cured pressure-sensitive adhesive layer and the die bond film are bonded together, the radiation irradiation here is not necessary.

  Next, the picked-up semiconductor chip 5 is bonded and fixed to the adherend 6 through the die-bonding film 16 (die-bonding process). Examples of the adherend 6 include a lead frame, a TAB film, a substrate, and a separately manufactured semiconductor chip. The adherend 6 may be, for example, a deformable adherend that can be easily deformed or a non-deformable adherend (such as a semiconductor wafer) that is difficult to deform. In this step, it is preferable to set conditions within a range that does not substantially involve a reaction of the die bond film 16 (for example, formation of a crosslinked structure).

  A conventionally well-known thing can be used as said board | substrate. As the lead frame, a metal lead frame such as a Cu lead frame or a 42 Alloy lead frame, or an organic substrate made of glass epoxy, BT (bismaleimide-triazine), polyimide, or the like can be used. However, the present invention is not limited to this, and includes a circuit board that can be used by mounting a semiconductor chip and electrically connecting to the semiconductor chip.

  Next, if necessary, as shown in FIG. 2, the tip of the terminal portion (inner lead) of the adherend 6 and an electrode pad (not shown) on the semiconductor chip 5 are electrically connected by a bonding wire 7. (Wire bonding process). As the bonding wire 7, for example, a gold wire, an aluminum wire, a copper wire or the like is used. The temperature at the time of wire bonding is 80 to 250 ° C, preferably 80 to 220 ° C. The heating time is several seconds to several minutes. The connection is performed by a combination of vibration energy by ultrasonic waves and crimping energy by applying pressure while being heated so as to be within the temperature range. In this step, it is preferable to set conditions within a range that does not substantially involve a reaction of the die bond film 16 (for example, formation of a crosslinked structure).

  Next, when installing semiconductor chips in a plurality of stages, another semiconductor chip with a die-bonding film may be die-bonded on the semiconductor chip 5 (not shown). At this time, other die bond films may be used as the die bond film, but the die bond film 16 is preferably used. The die bonding conditions can be the same as the die bonding conditions of the semiconductor chip 5. Thereafter, if necessary, the tip of the terminal portion of the adherend 6 and the electrode pad on the other semiconductor chip are electrically connected by a bonding wire (wire bonding step). The wire bonding conditions can be the same as the wire bonding conditions of the semiconductor chip 5.

Next, as shown in FIG. 2, the semiconductor chip 5 is sealed with a sealing resin 8 (sealing step). This step is performed to protect the semiconductor chip 5 and the bonding wire 7 mounted on the adherend 6. This step can be performed by molding a sealing resin with a mold. As the sealing resin 8, for example, an epoxy resin is used. When semiconductor chips are installed in a plurality of stages, the semiconductor chip 5 and the other semiconductor chips are sealed with a sealing resin 8 (not shown). Although the heating temperature at the time of resin sealing is normally performed at 175 degreeC for 60 to 90 second, this invention is not limited to this, For example, it can cure at 165 to 185 degreeC for several minutes.
The die bond film 16 has a storage elastic modulus E′1 at 150 ° C. before heat treatment of 10 MPa or less, and is relatively flexible. Therefore, even if a void is generated in the die bonding step, it can be dispersed in the resin without being expanded by the pressure in the sealing step, and can be disappeared visually. As a result, the influence of voids can be reduced.
The die bond film 16 has a difference (E′2−E′1) between the E′1 and the storage elastic modulus E′2 at 150 ° C. after heating at 150 ° C. for 1 hour, which is 5 MPa or less. It has a property that it is difficult to be hardened by a heat history before the process (for example, heat in a plurality of die bonding processes). Therefore, even after a long thermal history due to the multi-stage chip etc., the void can be visually disappeared by the pressure in the sealing process. As a result, the influence of voids can be reduced.
In this sealing step, a method of embedding the semiconductor chip 5 in a sheet-like sealing sheet as the sealing resin 8 (for example, see JP 2013-7028 A) can also be employed.

Next, the die bond film 16 is heated to form a crosslinked structure, and the semiconductor chip 5 is bonded and fixed to the adherend 6 to improve the heat resistance strength (crosslinking formation step). The heating temperature can be 80 to 200 ° C, preferably 100 to 175 ° C, more preferably 100 to 140 ° C. The heating time can be 0.1 to 24 hours, preferably 0.1 to 3 hours, more preferably 0.2 to 1 hour. Moreover, you may perform bridge | crosslinking formation on pressurization conditions. The pressurization condition is preferably in a range of 1~20kg / cm ^2, in the range of 3~15kg / cm ² is more preferable. Crosslinking formation under pressure can be performed, for example, in a chamber filled with an inert gas.
The die bond film 16 is less likely to undergo a reaction related to the cross-linking formation depending on the heat (for example, heat in the die bonding step) prior to the cross-linking forming step, and the cross-linking is formed by the heat in the cross-linking forming step. It is preferable that it is designed as follows. Moreover, it is preferable that the heating conditions in the die bonding step and the heating conditions in the cross-linking formation step are set so that the function can be exhibited.

  Next, further heating is performed as necessary to completely cure the under-cured sealing resin 8 in the sealing process (post-curing process). Although the heating temperature in this process changes with kinds of sealing resin, it exists in the range of 165-185 degreeC, for example, and heating time is about 0.5 to 8 hours.

  Hereinafter, preferred embodiments of the present invention will be described in detail by way of example. However, the materials, blending amounts, and the like described in this example are not intended to limit the gist of the present invention only to those unless otherwise limited. In the following, “parts” means parts by weight.

<Production of die bond film>
Example 1
The following (a) to (b) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23% by weight.
(A) Acrylate ester copolymer (manufactured by Nagase ChemteX Corporation, trade name: SG-P3, content of each main monomer: ethyl acrylate 30) containing ethyl acrylate, butyl acrylate, and acrylonitrile as main monomers Weight%, butyl acrylate 39 weight%, acrylonitrile 28 weight%)
90 parts (b) filler (manufactured by Admatechs, product name: SO-E2, average particle size: 0.5 μm)
30 copies

  This adhesive composition solution was applied onto a release film (release liner) made of a polyethylene terephthalate film having a thickness of 38 μm after the silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thus, a die bond film A having a thickness of 20 μm was produced.

(Example 2)
The following (a) to (c) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23% by weight.
(A) Acrylate ester copolymer (manufactured by Nagase ChemteX Corporation, trade name: SG-P3, content of each main monomer: ethyl acrylate 30) containing ethyl acrylate, butyl acrylate, and acrylonitrile as main monomers Weight%, butyl acrylate 39 weight%, acrylonitrile 28 weight%)
75 parts (b) thermal crosslinking agent (phenol resin, manufactured by Meiwa Kasei Co., Ltd., product name: MEH-7800)
15 parts (c) filler (manufactured by Admatechs, product name: SO-E2, average particle size: 0.5 μm)
10 copies

  This adhesive composition solution was applied onto a release film (release liner) made of a polyethylene terephthalate film having a thickness of 38 μm after the silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thus, a die bond film B having a thickness of 20 μm was produced.

(Example 3)
The following (a) to (b) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23% by weight.
(A) Acrylate ester copolymer (manufactured by Nagase ChemteX Corp., trade name: SG-708-6 (carboxyl group-containing), main monomers each having ethyl acrylate, butyl acrylate, and acrylonitrile as main monomers Content: ethyl acrylate 51% by weight, butyl acrylate 26% by weight, acrylonitrile 19% by weight)
75 parts (b) thermal crosslinking agent (epoxy resin, manufactured by DIC, product name: HP-4700)
15 parts (c) filler (manufactured by Admatechs, product name: SO-E1, average particle size: 0.25 μm)
70 copies

  This adhesive composition solution was applied onto a release film (release liner) made of a polyethylene terephthalate film having a thickness of 38 μm after the silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thereby, a die bond film C having a thickness of 20 μm was produced.

(Comparative Example 1)
The following (a) to (e) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23% by weight.
(A) Acrylate ester copolymer (manufactured by Nagase ChemteX Corporation, trade name: SG-P3, content of each main monomer: ethyl acrylate 30) containing ethyl acrylate, butyl acrylate, and acrylonitrile as main monomers Weight%, butyl acrylate 39 weight%, acrylonitrile 28 weight%)
90 parts (b) epoxy resin (manufactured by DIC, product name: HP-4700)
20 parts (c) phenolic resin (Maywa Kasei Co., Ltd., product name: MEH-7800M)
20 parts (d) thermal crosslinking catalyst (manufactured by Shikoku Kasei Kogyo Co., Ltd., trade name: “CURAZOL (registered trademark)”, 2PHZ-PW, 2-phenyl-4,5-dihydroxymethylimidazole)
1 part (e) filler (manufactured by Admatechs, product name: SO-E2, average particle size: 0.5 μm)
10 copies

  This adhesive composition solution was applied onto a release film (release liner) made of a polyethylene terephthalate film having a thickness of 38 μm after the silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thereby, a die bond film D having a thickness of 20 μm was produced.

(Comparative Example 2)
The following (a) to (e) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23% by weight.
(A) Acrylate ester copolymer (manufactured by Nagase ChemteX Corp., trade name: SG-708-6 (carboxyl group-containing), main monomers each having ethyl acrylate, butyl acrylate, and acrylonitrile as main monomers Content: ethyl acrylate 51% by weight, butyl acrylate 26% by weight, acrylonitrile 19% by weight)
70 parts (b) epoxy resin (manufactured by DIC, product name: HP-4700)
35 parts (c) acid anhydride (manufactured by Shin Nippon Rika Co., Ltd., product name: Rikagit TMEG-100)
37 parts (d) thermal crosslinking catalyst (manufactured by Shikoku Kasei Kogyo Co., Ltd., trade name: “Cureazole (registered trademark)”, 2PHZ-PW, 2-phenyl-4,5-dihydroxymethylimidazole)
2 parts (e) Thermal crosslinking agent (Mitsubishi Gas Chemical Co., Ltd., trade name: Tetrad X)
1 part (e) filler (manufactured by Admatechs, product name: SO-E2, average particle size: 0.5 μm)
140 parts

  This adhesive composition solution was applied onto a release film (release liner) made of a polyethylene terephthalate film having a thickness of 38 μm after the silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thus, a die bond film E having a thickness of 20 μm was produced.

(Measurement of storage elastic modulus E′1 and loss elastic modulus E ″ 1 at 150 ° C. before heat treatment of die bond film)
About the die-bonding film of an Example and a comparative example, it laminated | stacked to thickness 200 micrometers, respectively, and was set as the measurement sample of width 10mm and length 40mm. Next, using a dynamic viscoelasticity measuring apparatus (RSA (III), manufactured by Rheometric Scientific), the tensile storage elastic modulus at -30 to 260 ° C and the loss elastic modulus are in tensile mode. The measurement was performed under the conditions of a distance between chucks of 22.5 mm, a frequency of 10 Hz, and a heating rate of 10 ° C./min. Table 1 shows the storage elastic modulus at 150 ° C. and the loss elastic modulus at 150 ° C. Table 1 also shows the peak value of the loss tangent tan δ1 when this measurement is performed.

(Measurement of storage elastic modulus E′2 and loss elastic modulus E ″ 2 at 150 ° C. after heating the die bond film at 150 ° C. for 1 hour)
The die bond film which concerns on an Example and a comparative example was heated at 150 degreeC for 1 hour. Next, each sample was laminated to a thickness of 200 μm to obtain a measurement sample having a width of 10 mm and a length of 40 mm. Next, using a dynamic viscoelasticity measuring apparatus (RSA (III), manufactured by Rheometric Scientific), the tensile storage elastic modulus at -30 to 260 ° C and the loss elastic modulus are in tensile mode. The measurement was performed under the conditions of a distance between chucks of 22.5 mm, a frequency of 10 Hz, and a heating rate of 10 ° C./min. Table 1 shows the storage elastic modulus at 150 ° C. and the loss elastic modulus at 150 ° C. Table 1 also shows the peak value of the loss tangent tan δ2 when this measurement is performed.

  From the above measurement results, the difference (E′2−E′1), the ratio (E′1 / E′2), the difference (E ″ 2−E ″ 1), the ratio (E ″ 1 / E ′). '2), the difference (tan δ2-tan δ1) was determined. The results are shown in Table 1.

(Tensile fracture elongation L1 (%) at 25 ° C. before heat treatment of the die bond film)
About the die-bonding film of an Example and a comparative example, each was laminated | stacked to thickness 200 micrometers, and it was set as the measurement sample of width 10mm and initial length 40mm. Next, using a tensile tester (Autograph, manufactured by Shimadzu Corporation), the tensile elongation at break at 25 ° C. was measured under conditions of a tensile speed of 300 mm / min and a distance between chucks of 10 mm. The results are shown in Table 1.

(Tensile fracture elongation L2 (%) at 25 ° C. after heating for 1 hour at 150 ° C. of the die bond film)
The die bond film which concerns on an Example and a comparative example was heated at 150 degreeC for 1 hour. Next, each sample was laminated to a thickness of 200 μm to obtain a measurement sample having a width of 10 mm and an initial length of 40 mm. Next, using a tensile tester (Autograph, manufactured by Shimadzu Corporation), the tensile elongation at break at 25 ° C. was measured under conditions of a tensile speed of 300 mm / min and a distance between chucks of 10 mm. The results are shown in Table 1.

(Void evaluation)
The die bond film obtained in each Example and Comparative Example was attached to a 9.5 mm square mirror chip at 60 ° C., and the die bond film with the mirror chip was subjected to BGA under conditions of a temperature of 120 ° C., a pressure of 0.1 MPa, and a time of 1 second. Bonded to the substrate. Next, heat treatment was performed at 150 ° C. for 1 hour in a dryer. Next, using a mold machine (manufactured by TOWA Press, manual press Y-1), a sealing step was performed under conditions of a molding temperature of 175 ° C., a clamp pressure of 184 kN, a transfer pressure of 5 kN, and a time of 120 seconds. After the sealing step, voids between the die bond film and the mirror chip were observed using an ultrasonic imaging apparatus (manufactured by Hitachi Finetech Co., Ltd., FS200II). The area occupied by voids in the observed image was calculated using binarization software (WinRoof ver. 5.6). When the area occupied by the void is less than 10% with respect to the surface area of the die bond film, it is evaluated as “◯”, when it is 10% or more and less than 30%, “△”, and when it is 30% or more, it is evaluated as “x”. did. The results are shown in Table 1.

(Moisture resistant solder reflow test)
The die bond film obtained in each Example and Comparative Example was attached to a 9.5 mm square mirror chip at 60 ° C., and the die bond film with the mirror chip was subjected to BGA under conditions of a temperature of 120 ° C., a pressure of 0.1 MPa, and a time of 1 second. Bonded to the substrate. Next, heat treatment was performed at 150 ° C. for 1 hour in a dryer. Next, using a mold machine (manufactured by TOWA Press, manual press Y-1), a sealing step was performed under conditions of a molding temperature of 175 ° C., a clamp pressure of 184 kN, a transfer pressure of 5 kN, and a time of 120 seconds. Next, thermosetting was performed at 175 ° C. for 5 hours. Thereafter, a moisture absorption operation was performed under conditions of a temperature of 30 ° C., a humidity of 60% RH, and a time of 72 hours. Next, the sample was passed through an IR reflow furnace whose temperature was set so that a temperature of 260 ° C. or higher was maintained for 10 seconds. With respect to the nine mirror chips, whether or not peeling occurred at the interface between the die bond film and the BGA substrate was observed with an ultrasonic microscope, and the ratio at which peeling occurred was calculated. The results are shown in Table 1.

DESCRIPTION OF SYMBOLS 10 Die bond film with dicing sheet 11 Dicing sheet 12 Base material 14 Adhesive layer 16 Die bond film 4 Semiconductor wafer 5 Semiconductor chip 6 Substrate 7 Bonding wire 8 Sealing resin

Claims (11)

The storage elastic modulus E′1 at 150 ° C. before the heat treatment is 0.1 MPa or more and 10 MPa or less ,
The E'1 the difference between the storage modulus E'2 at 0.99 ° C. after 1 hour heating at 0.99 ° C. (E'2-E'1) is Ri der 5MPa or less,
A die-bonding film characterized by not containing a thermal crosslinking catalyst . 2. The die bond film according to claim 1, wherein a ratio (E′1 / E′2) between E′1 and E′2 is 0.2 or more and 1 or less . The difference (E ″ 2-E ″ 1) between the loss elastic modulus E ″ 1 at 150 ° C. before heat treatment and the loss elastic modulus E ″ 2 at 150 ° C. after heating at 150 ° C. for 1 hour is 1 MPa or less,
3. The die bond film according to claim 1, wherein a ratio (E ″ 1 / E ″ 2) between the E ″ 1 and the E ″ 2 is 0.2 or more and 1 or less .   The difference (tan δ2-tan δ1) between the peak temperature of the loss tangent tan δ1 before the heat treatment and the peak temperature of the loss tangent tan δ 2 after heating at 150 ° C. for 1 hour is within 10 ° C. The die bond film of any one. The ratio (L2 / L1) between the tensile breaking elongation L1 at 25 ° C. before the heat treatment and the tensile breaking elongation L2 at 25 ° C. after heating at 150 ° C. for 1 hour is 0.5 or more and 1.0 or less . The die-bonding film according to claim 1, wherein the die-bonding film is a film. Alkyl acrylates or alkyl methacrylates, obtained by polymerizing a starting monomer material containing a 1 wt% to 30 wt% acrylonitrile, and an epoxy group as a functional group, or an acrylic copolymer having a carboxyl group The die-bonding film according to claim 1, comprising: The die bond film according to any one of claims 1 to 6 , further comprising 0 to 15% by weight of a thermal crosslinking agent when the total amount of organic resin components contained in the die bond film is 100% by weight. The die bond film according to claim 7 , wherein the thermal crosslinking agent is at least one selected from the group consisting of an epoxy thermal crosslinking agent, a phenol thermal crosslinking agent, and an acid anhydride thermal crosslinking agent. . A die bond film with a dicing sheet, wherein the die bond film according to any one of claims 1 to 8 is provided on a dicing sheet. Die-bonding film according to any one of claims 1-8, or a semiconductor device, characterized in that it is manufactured by using a dicing sheet with die-bonding film according to claim 9. Preparing a die bond film with a dicing sheet according to claim 9 ;
A bonding step of bonding the die bond film of the die bond film with the dicing sheet and the back surface of the semiconductor wafer;
Dicing the semiconductor wafer together with the die bond film to form a chip-shaped semiconductor chip; and
A pick-up step of picking up the semiconductor chip together with the die-bonding film from the die-bonding film with the dicing sheet;
A semiconductor comprising: a die-bonding step of die-bonding the semiconductor chip on an adherend through the die-bonding film; and a sealing step of sealing the semiconductor chip with a sealing resin after the die-bonding step. Device manufacturing method.

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