JP6253607B2 - Manufacturing method of semiconductor memory card - Google Patents

Description

  Embodiments described herein relate generally to a method for manufacturing a semiconductor memory card.

  In a semiconductor memory card incorporating a nonvolatile semiconductor memory chip such as a NAND flash memory, a memory chip or a controller chip is sealed in one package in order to increase the capacity, increase the speed, and reduce the manufacturing cost. A structure in which a stopped semiconductor storage device having an SiP (System in Package) structure is housed in a card case is applied. A semiconductor memory device having an SiP structure includes, for example, a wiring board having external terminals, a memory chip and a controller chip mounted on a surface of the wiring board opposite to a terminal formation surface, and a seal for sealing the memory chip and the controller chip. And a stop resin layer.

  For semiconductor storage devices stored in the card case, semiconductor storage devices having a plurality of device sizes are prepared depending on the performance such as the storage capacity of the semiconductor memory card and the size of the semiconductor chip mounted on the wiring board. . If a card case that does not match the size and shape of the semiconductor memory device is used, the semiconductor memory device may be loose or misaligned in the case. For this reason, there is a case where a card case having a storage portion having a shape matched to the semiconductor storage device to be stored is prepared. That is, a plurality of types of card cases are prepared according to the shape of the semiconductor memory device to be stored. In order to prepare a plurality of types of card cases, a molding die corresponding to each card case is required. This becomes a factor that increases the manufacturing cost and manufacturing man-hour of the semiconductor memory card.

JP 2013-182291 A

  The problem to be solved by the present invention is to provide a method of manufacturing a semiconductor memory card that can reduce the manufacturing cost and the number of manufacturing steps.

  In the semiconductor memory card manufacturing method according to the embodiment, the first semiconductor memory device or the second semiconductor memory device is provided in the first housing portion provided in the first case and in the second case provided in the second case. A step of sandwiching between the first case and the second case while being housed in the housing portion, a first joint provided in the first case, and a second joint provided in the second case Joining the parts. The first semiconductor memory device includes an external terminal. The second semiconductor memory device includes external terminals and has an outer shape smaller than that of the first semiconductor memory device. The first case includes an opening for exposing the external terminals of the first and second semiconductor memory devices. The first accommodating portion has a shape corresponding to the first semiconductor memory device. The first joint is provided on the outer peripheral edge of the first case. The second accommodating portion has a shape corresponding to the first semiconductor memory device. The second joint is provided on the outer peripheral edge of the second case. At least one of the first housing portion and the second housing portion further includes a support portion for positioning the second semiconductor memory device.

It is a figure which shows the semiconductor memory card of embodiment. FIG. 2 is a top view of a first semiconductor memory device housed in the semiconductor memory card shown in FIG. FIG. 3 is a bottom transparent view of the first semiconductor memory device shown in FIG. 2. FIG. 3 is a top view of a second semiconductor memory device housed in the semiconductor memory card shown in FIG. FIG. 6 is a bottom transparent view of the second semiconductor memory device shown in FIG. 4. FIG. 6 is a cross-sectional view taken along line AA in FIGS. 3 and 5. FIG. 2 is an exploded plan view showing a first configuration example of a card case used in the semiconductor memory card shown in FIG. 1. It is a figure which shows the state which accommodated the 1st semiconductor memory device in the 1st case of the card case shown in FIG. It is a figure which shows the state which joined the 2nd case to the 1st case shown in FIG. It is a figure which shows the state which accommodated the 2nd semiconductor memory device in the 1st case of the card case shown in FIG. It is a figure which shows the state which joined the 2nd case to the 1st case shown in FIG. FIG. 5 is an exploded plan view showing a second configuration example of a card case used in the semiconductor memory card shown in FIG. 1. It is a top view of the 1st semiconductor memory device accommodated in the card case shown in FIG. It is a top view of the 2nd semiconductor memory device accommodated in the card case shown in FIG. FIG. 7 is an exploded plan view showing a third configuration example of a card case used in the semiconductor memory card shown in FIG. 1. FIG. 16 is a top view of the first semiconductor memory device housed in the card case shown in FIG. 15. FIG. 16 is a top view of a second semiconductor memory device housed in the card case shown in FIG. 15. It is a top view which shows the 1st case of the card case used for the semiconductor memory card of other embodiment.

  Hereinafter, a method for manufacturing the semiconductor memory card of the embodiment will be described. In each embodiment, substantially the same constituent parts are denoted by the same reference numerals, and the description thereof may be partially omitted. The drawings are schematic, and the relationship between the thickness and the planar dimensions, the ratio of the thickness of each part, and the like may differ from the actual ones. The term indicating the direction such as up and down in the description indicates the relative direction when the terminal surface of the semiconductor memory card described later is up unless otherwise specified, and the actual direction with respect to the gravitational acceleration direction. May be different.

First, a semiconductor memory card manufactured by applying the manufacturing method of the embodiment will be described with reference to FIGS. 1A and 1B are diagrams showing a semiconductor memory card according to an embodiment. FIG. 1A is a top view of the semiconductor memory card, and FIG. 1B is a side view of the semiconductor memory card. A semiconductor memory card 1 shown in FIG. 1 is used as an SD ^™ standard memory card (SD ^™ card), for example, and includes a pair of upper and lower card cases 10 and a semiconductor memory device housed in the card case 10. 30 (301, 302).

  The card case 10 includes a first case 11 serving as an upper lid and a second case 12 serving as a lower lid. The card case 10 has a structure in which a space serving as a storage portion of the semiconductor memory device 30 is formed when the first case 11 and the second case 12 are overlapped. The semiconductor memory device 30 disposed in the space is accommodated in the card case 10 by, for example, welding the outer peripheral edge portions of the first case 11 and the second case 12. The card case 10 has a cutout portion 13 that indicates the front and back of the semiconductor memory card 1 and the direction of the front and back. The first case 11 that covers the upper surface (terminal formation surface) of the semiconductor memory device 30 has an opening 14 that exposes the external terminal 31 of the semiconductor memory device 30. The card case 10 is formed of an insulating resin material such as polycarbonate resin or ABS resin.

  The semiconductor memory device 30 is configured by a semiconductor device having a SiP structure. However, the semiconductor memory device 30 is not limited to the SiP structure, and a semiconductor package including a memory chip, a controller chip, or the like may be mounted on the wiring board. The configuration of the semiconductor memory device 30 having the SiP structure will be described in detail below. 2 is a view (top view) of the first semiconductor memory device 301 stored in the semiconductor memory card 1 shown in FIG. 1 as viewed from the top surface (terminal formation surface), and FIG. 3 is a diagram illustrating the first semiconductor memory device 301 on the bottom surface. It is the permeation | transmission figure (lower surface permeation | transmission figure) seen through through (mold surface). 4 is a top view of the second semiconductor memory device 302 housed in the semiconductor memory card 1 shown in FIG. 1, and FIG. 5 is a bottom transparent view of the second semiconductor memory device 302 shown in FIG. FIG. 6 is a cross-sectional view taken along line AA in FIGS. 4 and 5.

  The first semiconductor memory device 301 shown in FIGS. 2 and 3 and the second semiconductor memory device 302 shown in FIGS. 4 and 5 basically have the same configuration. However, the second semiconductor memory device 302 has a smaller outer shape than the first semiconductor memory device 301. Each of the first and second semiconductor memory devices 301 and 302 includes a wiring substrate 32 that serves as both a terminal formation substrate and a chip mounting substrate. The wiring board 32 has a first surface 32a that is a terminal formation surface and a second surface 32b that is a chip mounting surface. The wiring board 32 is a printed wiring board provided with a wiring network on the surface or inside of a resin base material, for example. External terminals 31 are provided on the first surface 32 a of the wiring board 32. The external terminals 31 are arranged along the first outer side S <b> 1 so as to be positioned in the vicinity of the first outer side S <b> 1 of the wiring board 32.

  A memory chip 33 is mounted on the second surface 32 b of the wiring board 32. 2 to 6 show a structure in which two memory chips 33 are stacked and mounted on the second surface 32b of the wiring board 32. However, the number of mounted memory chips 33 and the mounting structure are not limited thereto. It is not something that can be done. The number of mounted memory chips 33 may be one or three or more, and is appropriately set according to the storage capacity of the memory chip 33, the capacity of the semiconductor memory card 1, and the like. As the memory chip 33, for example, a semiconductor memory chip such as a NAND flash memory is used. A controller chip 34 is stacked on the memory chip 33. The controller chip 34 selects a chip for writing and reading data from the plurality of memory chips 33, writes data to the selected memory chip 33, reads data stored in the selected memory chip 33, and the like. .

  2 to 6, the two memory chips 33 have the same rectangular shape and are each provided with an electrode pad 35. The two memory chips 33 are stacked stepwise so that the electrode pads 35 are exposed. The electrode pads 35 of the two memory chips 33 are sequentially connected via metal wires 36 and are further electrically connected to connection pads 37 of the wiring board 32 via metal wires 36. The controller chip 34 has electrode pads 38. The electrode pads 38 of the controller chip 34 are electrically connected to the connection pads 40 of the wiring board 32 through metal wires 39.

  A sealing resin layer 41 using a thermosetting resin such as an epoxy resin is formed on the second surface 32b of the wiring board 32 on which the memory chip 33 and the controller chip 34 are mounted. The sealing resin layer 41 is formed by molding, for example. The memory chip 33 and the controller chip 34 are integrally sealed with a sealing resin layer 41 together with the metal wires 36 and 39 and the like. Thus, the semiconductor memory device 30 (301, 302) having the SiP structure is configured. As described above, the semiconductor memory card 1 is configured by housing the semiconductor memory device 30 (301, 302) having the SiP structure in the card case 10.

  Next, the manufacturing process of the semiconductor memory card 1 described above will be described. First, a manufacturing process of the semiconductor memory card 1 using the first configuration example of the card case 10 will be described with reference to FIGS. FIG. 7 is an exploded plan view of the card case 10A according to the first configuration example. The card case 10A shown in FIG. 7 is used for housing the first semiconductor memory device 301 shown in FIGS. 2 and 3 or the second semiconductor memory device 302 shown in FIGS. The card case 10A is composed of a pair of upper and lower cases 11A and 12A. The first case 11 </ b> A has an opening 14 that exposes the external terminal 31.

  A first welded portion 15 is provided as a first joint portion on the outer peripheral edge portion of the first case 11A. Inside the first welded portion 15, a first accommodating portion 16 that accommodates the semiconductor memory device 30 (301, 302) is provided. Similarly, the 2nd welding part 17 is provided in the outer-periphery edge part of 2nd case 12A as a 2nd junction part. Inside the second welded portion 17, a second accommodating portion 18 that accommodates the semiconductor memory device 30 is provided. The overall shapes of the first and second accommodating portions 16 and 18 correspond to the first semiconductor memory device 301, respectively. That is, the first and second accommodating portions 16 and 18 each have a concave shape corresponding to the first semiconductor memory device 301. The first semiconductor memory device 301 disposed in the housing parts 16 and 18 is positioned by the inner wall surfaces of the housing parts 16 and 18 having a concave shape.

  The second semiconductor memory device 302 is positioned when the second semiconductor memory device 302 having an outer shape smaller than that of the first semiconductor memory device 301 is accommodated in the first and second housing parts 16 and 18. A step portion 19 is provided as a supporting portion. That is, the step portions 19 are provided on both side surfaces of the first and second accommodating portions 16 and 18 so that their shapes are stepped inward. The first and second accommodating portions 16, 18 are a first region (region including the opening 14) Y1 above the straight line X with a straight line X defined by the stepped portion 19 provided on both side surfaces as a boundary. And a second region Y2 below the straight line X. The first region Y1 corresponds to the shape of the second semiconductor memory device 302.

  When the semiconductor memory card 1 is manufactured by housing the first semiconductor storage device 301 in the card case 10A described above, first, as shown in FIG. A first semiconductor memory device 301 is arranged. Both side surfaces of the first semiconductor memory device 301 have a step shape so as to correspond to the first housing portion 16. The first semiconductor memory device 301 corresponds to a region Z1 corresponding to the first region Y1 of the accommodating portions 16 and 18 and a second region Y2 of the accommodating portions 16 and 18 with the portion where the step is provided as a boundary. And a region Z2 to be operated. The region Z1 of the first semiconductor memory device 301 has the same shape as the second semiconductor memory device 302. The region Z2 of the first semiconductor memory device 301 allows the second semiconductor memory device 302 to be placed in the housing portions 16 and 18 of the first semiconductor memory device 301 after the step portion 19 positions the second semiconductor memory device 302. Thus, it has a shape whose lateral width is smaller than that of the region Z1.

  Next, as shown in FIG. 9, the second case 12A is arranged on the first case 11A in which the first semiconductor memory device 301 is accommodated. In other words, the first semiconductor memory device 301 is sandwiched between the first case 11A and the second case 12A while being accommodated in the accommodating portions 16 and 18. Thereafter, the welded portions 15 and 17 of the first and second cases 11A and 12A are melted by applying, for example, ultrasonic vibration, and are solidified, thereby fixing the welded portions 15 and 17 integrally. Thus, the semiconductor memory card 1 including the first semiconductor storage device 301 is manufactured by housing the first semiconductor storage device 301 in the card case 10A.

  Since the first semiconductor memory device 301 is partly positioned on the inner wall surfaces of the housing portions 16 and 18, the first semiconductor memory device 301 is positioned on the inner wall surface of the housing portion 16, 18. Occurrence can be suppressed. When positioning the first semiconductor memory device 301 on the inner wall surfaces of the housing portions 16 and 18, it is preferable to position the first semiconductor memory device 301 based on the outer edge of the first semiconductor memory device 301 that has been subjected to blade processing. In the semiconductor memory device 301, for example, a memory chip 33 or a controller chip 34 is mounted on each device formation region of a multi-piece collective substrate, and each device formation region is collectively sealed with resin, and then a resin sealing body is attached. It is manufactured by cutting according to each device formation region.

  The resin sealing body cutting step includes a step of blade processing the resin sealing body into a rectangle that approximates the outer shape of the semiconductor memory device 301, and a laser processing of the blade processed cutting body in accordance with the detailed shape of the semiconductor memory device 301. And a process of performing. The semiconductor memory device 301 manufactured through the cutting process described above has a blade-processed outer side and a laser-processed outer side. The tolerance of the device size based on the blade-processed outer side is about ± 60 μm, whereas the tolerance of the device size based on the laser-processed outer side is about ± 100 μm. Accordingly, by positioning the outer edge of the first semiconductor storage device 301 that has been subjected to the blade processing on the inner wall surfaces of the accommodating portions 16 and 18, the first semiconductor storage device 301 can be prevented from rattling or displacement in the semiconductor memory card 1. Generation | occurrence | production can be suppressed more effectively.

  When the semiconductor memory card 1 is manufactured by housing the second semiconductor storage device 302 in the card case 10A described above, first, as shown in FIG. A second semiconductor memory device 302 is disposed. The second semiconductor memory device 302 has a shape corresponding to the first region Y1 of the housing parts 16 and 18. For this reason, the second semiconductor memory device 302 housed in the first case 11 is positioned by the step portion 19 in the housing portions 16 and 18. Next, as shown in FIG. 11, the second case 12A is arranged on the first case 11A in which the second semiconductor memory device 302 is accommodated. Thereafter, the welded portions 15 and 17 of the first and second cases 11A and 12A are melted, for example, by applying ultrasonic vibration, and further solidified, whereby the welded portions 15 and 17 are integrally fixed.

  By housing the second semiconductor memory device 302 in the card case 10A, the semiconductor memory card 1 including the second semiconductor memory device 302 is manufactured. Since the second semiconductor memory device 302 is partly positioned by the inner wall surfaces of the accommodating portions 16 and 18 and the stepped portion 19, the second semiconductor memory device 302 has a backlash of the second semiconductor memory device 302 in the semiconductor memory card 1. Generation | occurrence | production of deviation etc. can be suppressed. Similar to the first semiconductor memory device 301, the second semiconductor memory device 301 is preferably positioned based on the blade-processed outer side. As described above, the second semiconductor memory device 302 having a small outer shape with respect to the shape of the card case 10 can be satisfactorily stored in the card case 10 common to the first semiconductor memory device 301. Therefore, it is possible to reduce the manufacturing cost and the number of manufacturing steps of the semiconductor memory card 1 while suppressing the occurrence of rattling and deviation of the semiconductor memory device 30.

  Next, a manufacturing process of the semiconductor memory card 1 using the second configuration example of the card case 10 will be described with reference to FIGS. FIG. 12 is an exploded plan view of the card case 10B according to the second configuration example. The card case 10B shown in FIG. 12 is used for housing the first semiconductor memory device 301B shown in FIG. 13 or the second semiconductor memory device 302B shown in FIG. The card case 10B has a step portion 19 provided on one side surface in the housing portions 16 and 18 of the cases 11B and 12B. The step portion 19 that supports the second semiconductor memory device 302B may be provided only on one side surface in the housing portions 16 and 18. Even with such a stepped portion 19, it is possible to suppress the occurrence of rattling or deviation of the second semiconductor memory device 302 </ b> B in the semiconductor memory card 1.

  Next, a manufacturing process of the semiconductor memory card 1 using the third configuration example of the card case 10 will be described with reference to FIGS. FIG. 15 is an exploded plan view of a card case 10C according to the third configuration example. A card case 10C shown in FIG. 15 is used for housing the first semiconductor memory device 301C shown in FIG. 16 or the second semiconductor memory device 302C shown in FIG. The first and second cases 11C and 12C constituting the card case 10C have protrusions 20 protruding from both side surfaces of the accommodating portions 16 and 18 as support portions for positioning the second semiconductor memory device 302. Yes.

  The second semiconductor memory device 302C is partially positioned by the inner wall surfaces of the housing portions 16 and 18 and the projections 20 so that the second semiconductor memory device 302C has a backlash of the second semiconductor memory device 302C in the semiconductor memory card 1. Generation | occurrence | production of deviation etc. can be suppressed. On the other hand, the first semiconductor memory device 301 </ b> C has a recess 42 provided on the side surface thereof so as to correspond to the protrusion 20. When housing the first semiconductor memory device 301C in the cases 11C and 12C, the first semiconductor memory device 301C is shared with the second semiconductor memory device 302 by fitting the protrusions 20 into the recesses 42. It can be stored in 10C. When the protruding portion 20 is applied as the support portion, the size of the first semiconductor memory device 301C can be made larger than when the step portion 19 is applied.

  According to the manufacturing method of the embodiment, the semiconductor memory card 1 can be manufactured by using the common card case 10 for the first semiconductor memory device 301 and the second semiconductor memory device 302 having a smaller outer shape. it can. Even in such a case, it is possible to prevent the semiconductor memory device 30 (301, 302) from rattling or shifting in the semiconductor memory card 1. Accordingly, it is possible to manufacture the high-quality semiconductor memory card 1 corresponding to the plurality of semiconductor memory devices 30 at low cost and with a low man-hour. The number of semiconductor memory devices 30 arranged in the card case 10 is not limited to two, and may be three or more.

  FIG. 18 shows a first case 11 of a card case according to another embodiment. The housing portion 16 of the case 11 shown in FIG. 18 has a shape corresponding to the first semiconductor memory device. In the accommodating part 16, the 1st level | step-difference part 191 which supports the 2nd semiconductor memory device which has an external shape smaller than a 1st semiconductor memory device, and the 3rd semiconductor which has an external shape smaller than a 2nd semiconductor memory device A second step portion 192 that supports the storage device is provided. By applying the accommodating portion 16 provided with a plurality of step portions 191 and 192 (or protrusions), a card case common to three or more semiconductor memory devices 30 can be provided.

  In addition, although several embodiment of this invention was described, these embodiment is shown as an example and is not intending limiting the range of invention. These embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the scope of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and at the same time included in the invention described in the claims and the equivalents thereof.

  DESCRIPTION OF SYMBOLS 1 ... Semiconductor memory card, 10 ... Card case, 11 ... 1st case, 12 ... 2nd case, 14 ... Opening part, 15, 17 ... Welding part, 16, 18 ... Accommodating part, 19 ... Step part, 20 ... Projection, 30 ... Semiconductor memory device, 301 ... First semiconductor memory device, 302 ... Second semiconductor memory device, 31 ... External terminal, 32 ... Wiring board, 33 ... Memory chip, 34 Controller chip, 36, 39 ... Metal wire, 41 ... Sealing resin layer, 42 ... Recess.

Claims (5)

The first semiconductor memory device or the second semiconductor memory device is housed in the first housing portion provided in the first case and the second housing portion provided in the second case, while the first semiconductor memory device is housed in the first housing portion. A step of sandwiching between the case and the second case,
Joining the first joint provided in the first case and the second joint provided in the second case, and
The first semiconductor memory device includes an external terminal,
The second semiconductor memory device includes external terminals and has an outer shape smaller than that of the first semiconductor memory device,
The first case includes an opening for exposing the external terminals of the first and second semiconductor memory devices,
The first accommodating portion has a shape corresponding to the first semiconductor memory device,
The first joint is provided on an outer peripheral edge of the first case,
The second accommodating portion has a shape corresponding to the first semiconductor memory device,
The second joint portion is provided at an outer peripheral edge portion of the second case,
The method for manufacturing a semiconductor memory card, wherein at least one of the first housing portion and the second housing portion further includes a support portion for positioning the second semiconductor memory device.   Each of the first and second semiconductor memory devices includes a wiring board having the external terminals, a memory chip and a controller chip mounted on the wiring board, the wiring board, the memory chip, and the controller chip. 2. The semiconductor memory card manufacturing method according to claim 1, further comprising: a connection member that electrically connects the memory chip; and a sealing resin layer formed on the wiring substrate so as to seal the memory chip and the controller chip. Method. The support portion includes a step portion provided so that a side surface shape of at least one of the first and second storage portions is a step shape.
The first and second accommodating portions have a first region and a second region including the opening with the stepped portion as a boundary,
The first semiconductor memory device has a step shape corresponding to the step portion,
The method of manufacturing a semiconductor memory card according to claim 1, wherein the second semiconductor memory device has a shape corresponding to the first region. The support portion has a protrusion protruding from at least one side surface of the first and second accommodation portions,
The first and second accommodating portions have a first region and a second region including the opening, with the protrusion as a boundary,
The first semiconductor memory device has a recess corresponding to the protrusion.
The method of manufacturing a semiconductor memory card according to claim 1, wherein the second semiconductor memory device has a shape corresponding to the first region. The first and second semiconductor memory devices have blade-shaped outer sides,
5. The manufacturing of a semiconductor memory card according to claim 1, wherein the first and second semiconductor memory devices are positioned in the first and second housing portions by the outer sides. Method.

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