JP6226117B2 - Plasma processing apparatus and plasma processing method - Google Patents

Description

  The present invention relates to plasma processing. The present invention particularly relates to a technique effective for plasma processing of a substrate held on a transport carrier including a frame and a holding sheet.

  The plasma processing apparatus disclosed in Patent Document 1 targets a substrate held on a transport carrier including a ring-shaped frame and a holding sheet. A carrier carrying the substrate is placed on a stage in the chamber. The plasma processing apparatus includes a cover ring that covers the holding sheet and the frame so as not to be exposed to plasma during plasma processing of the substrate. The cover ring protects the carrier carrier holding sheet and the frame so as not to be affected by the heat of the plasma.

  JP 2012-248741 A

  On the stage disposed in the chamber, deposits derived from the ionized plasma generating gas are deposited during the plasma processing to form a film (adhesion film). Particles generated by partial peeling of the adhesion film adversely affect the characteristics of the plasma treatment, and therefore maintenance for removing the adhesion film must be performed periodically. It is known that an element disposed in a chamber is heated with a heater or the like to prevent formation of an adhesion film and reduce maintenance frequency. However, providing a heater or the like causes a complicated apparatus configuration and high costs.

  An object of the present invention is to prevent the formation of an adhesion film on a stage disposed in a chamber with a simple configuration.

According to a first aspect of the present invention, there is provided a plasma processing apparatus for performing a plasma processing on a substrate held on a transport carrier having an annular frame and a holding sheet, the chamber having a processing chamber capable of being depressurized, and the processing chamber. Decompression means for depressurization, gas supply means for supplying a plasma generating gas to the processing chamber, a plasma source for generating plasma in the processing chamber, and a stage provided in the chamber on which the carrier is placed A cover comprising: a main body for covering the holding sheet and the frame of the transport carrier placed on the stage; and a window formed to penetrate the main body in the thickness direction; and the stage A relative position of the cover with respect to the first position that allows the transfer carrier to be loaded and unloaded from the stage away from the stage. A drive mechanism that can be set to a second position that covers the holding sheet and the frame of the transport carrier placed on the stage, and the window portion exposes the substrate held by the holding sheet; A contact portion that contacts the main body and the outer periphery of the stage outside the transport carrier placed on the stage when the cover is in the second position; There is provided a plasma processing apparatus for transferring heat generated in a cover to the outer peripheral portion via the contact portion, thereby heating the stage.

  When the cover is in the second position covering the holding sheet and the frame of the transport carrier placed on the stage, the outer peripheral part of the stage of the main body comes into contact with the contact part. Therefore, the heat generated in the cover by being exposed to the plasma is transmitted to the stage by heat transfer through the contact portion. Since the stage is heated by the heat transfer from the cover and the temperature is raised, it is possible to effectively prevent deposits derived from the ionized process gas from being deposited on the stage and forming an adhesion film. Since it is not necessary to provide a means such as a heater for heating the stage, it is possible to realize prevention of adhesion film formation simply and at low cost.

According to a second aspect of the present invention, there is provided a plasma processing method for performing a plasma treatment on a substrate held by a transfer carrier comprising an annular frame and a holding sheet, wherein the transfer carrier holding the substrate is used as a chamber of a plasma processing apparatus. A main body for carrying in and placing on the stage, covering the holding sheet and the frame of the transport carrier placed on the stage, and penetrating in the thickness direction in the main body The carrier is covered with a cover having a window, and the main body and the outer periphery of the stage are brought into contact with each other on the outside of the carrier placed on the stage to generate plasma in the chamber. In addition, the substrate is subjected to plasma treatment through the window portion, and heat generated in the cover by the plasma is applied to the outer peripheral portion of the contact portion. Transmitted through, thereby heating the stage, to provide a plasma processing method.

  When the cover is in a position covering the holding sheet and the frame of the transport carrier placed on the stage, the stage is an element arranged in the chamber because it includes a contact portion that brings the main body into contact with the outer periphery of the stage. The formation of an adhesion film on the surface can be prevented with a simple configuration.

1 is a cross-sectional view of a dry etching apparatus according to a first embodiment of the present invention. The top view of the stage and cover ring in the state in which the conveyance carrier was mounted. The partial expanded sectional view of the dry etching apparatus of FIG. The partial expanded sectional view of the dry etching apparatus which concerns on 2nd Embodiment of this invention. The partial expanded sectional view of the dry etching apparatus concerning a 3rd embodiment of the present invention.

  Next, embodiments of the present invention will be described with reference to the accompanying drawings. In the following explanation, terms indicating a specific direction or position (for example, terms including “up”, “down”, “side”, “end”) may be used as necessary. The use is intended to facilitate understanding of the invention with reference to the drawings, and the technical scope of the present invention is not limited by the meaning of these terms. Further, the following description is merely illustrative in nature and is not intended to limit the present invention, its application, or its use.

(First embodiment)
1 to 3 show a dry etching apparatus 1 which is an example of a plasma processing apparatus according to an embodiment of the present invention. In this embodiment, the dry etching apparatus 1 performs plasma dicing and subsequent ashing on the wafer (substrate) 2. Plasma dicing is a method in which a wafer on which a plurality of IC parts (semiconductor devices) are formed is cut by a boundary line (street) by dry etching and divided into individual IC parts. Referring to FIGS. 2 and 3, a wafer 2 that is circular in the present embodiment has a front surface 2a on which an IC portion or the like (not shown) is formed, and a back surface 2b opposite to the front surface 2a (an IC portion or the like is formed). Not provided). A mask 3 is formed on the surface 2a of the wafer 2 with a pattern for plasma dicing.

  The dry etching apparatus 1 includes a chamber (vacuum container) 4 that forms a process chamber 4a that can be decompressed. The chamber 4 can accommodate the carrier 5 in the processing chamber 4a through an openable / closable entrance 4b. As shown most clearly in FIG. 2, the transport carrier 5 includes a holding sheet 6 that detachably holds the wafer 2. As the holding sheet 6, for example, a so-called UV tape that can be elastically stretched and holds the wafer 2 by adhesive force, but changes its chemical characteristics due to irradiation of ultraviolet rays and greatly reduces the adhesive force can be used. . Referring also to FIG. 3, in the drawing of the holding sheet 6, one surface is a surface having adhesiveness (adhesive surface 6 a) and the other is a surface having no adhesiveness (non-adhesive surface 6 b). The holding sheet 6 is flexible and can be easily bent by itself to hold a fixed shape. Therefore, a substantially ring-shaped thin frame 7 is attached to the adhesive surface 6 a near the outer peripheral edge of the holding sheet 6. The frame 7 is made of, for example, metal, and has rigidity capable of holding the shape together with the holding sheet 6.

  The wafer 2 is held on the holding sheet 6 of the transport carrier 5 by sticking the back surface 2b to the adhesive surface 6a. As shown in FIG. 2, the wafer 2 is disposed in the center of a circular region 6 c surrounded by the frame 7 on the adhesive surface 6 a of the holding sheet 6. Specifically, the position of the wafer 2 with respect to the holding sheet 6 is such that the center Cs of the circular region 6c and the center Cw of the wafer 2 (center when the wafer 2 is viewed from the front surface 2a or the back surface 2b) are substantially coincident. Is set. By disposing the wafer 2 in the center of the circular area 6c, an annular area 6d (area having a width indicated by an arrow in FIG. 2) having a constant width is formed between the wafer 2 of the holding sheet 6 and the frame 7. The

  Referring to FIG. 1, an antenna (plasma source) 12 serving as an upper electrode is disposed above a dielectric wall 11 that closes the top of a chamber 4 (including an inner chamber 9 heated by a heater 8) of the dry etching apparatus 1. Is arranged. The antenna 12 is electrically connected to a first high frequency power supply 13A. On the other hand, on the bottom side in the chamber 11, the stage 14 on which the transfer carrier 5 holding the wafer 2 is placed as described above is disposed. A gas introduction port 11a (provided on the dielectric wall 11 in the present embodiment) to the chamber 4 has a process gas source (gas supply means) 15 which is a supply source of plasma generation gas and other plasma generation gas. Is connected to the ashing gas source 16 which is a supply source. A pressure reducing mechanism (pressure reducing means) 17 including a vacuum pump for evacuating and reducing the pressure in the processing chamber 4 a is connected to the exhaust port 4 c of the chamber 4.

  The stage 14 includes an electrode part 21 electrically connected to the second high-frequency power source 13B, a first exterior part 22A surrounding the outer periphery of the electrode part 21, and a second exterior part surrounding the outer periphery of the first exterior part 22A. 22B. The second exterior portion 22B is an outermost exterior portion and is a member constituting the outer peripheral portion of the stage 14. The electrode portion 21 includes a thin dielectric portion 24 that forms the vicinity of the upper end surface 21 a in which the electrostatic chucking electrode 23 is built, that is, the uppermost portion, and a metal portion 25 below the dielectric portion 24. The upper end surface 21a of the electrode portion 21 and the upper end surface 22a of the first exterior portion 22A constitute a mounting surface 26 that is one horizontal surface on which the transfer carrier 5 holding the wafer 2 is mounted. The first exterior portion 22A is made of a dielectric, and the second exterior portion 22B is made of an earth shield material (a metal having conductivity and etching resistance). The transport carrier 5 is placed on the stage 14 with the surface (adhesive surface 6 a) of the holding sheet 6 holding the wafer 2 facing upward, and the non-adhesive surface 6 b of the holding sheet 6 is placed on the placement surface 26 of the stage 14. Placed on top. The transport carrier 5 is placed at a predetermined position and posture (including a rotational angle position around the center Cs of the circular region 6 c of the holding sheet 6) with respect to the placement surface 26 of the stage 14 by a transport mechanism (not shown). The Hereinafter, this predetermined position and posture are referred to as normal positions.

  The dry etching apparatus 1 includes a cooling device 27 on the stage 14. The cooling device 27 includes a refrigerant channel 25 a formed in the metal part 25 of the electrode unit 21, and a refrigerant circulation device 28 that circulates the temperature-controlled refrigerant in the refrigerant channel 25 a. In addition, about the 2nd exterior part 22B, the refrigerant | coolant flow path and the means to forcibly cool this are not provided.

  In the vicinity of the upper end 21a of the electrode portion 21 (dielectric portion 24), an electrostatic chucking electrode 23 is incorporated. A DC power supply 29 is electrically connected to the electrostatic adsorption electrode 23. The electrostatic chucking electrode 23 may be a bipolar type or a monopolar type.

  A plurality of lifting pins 31 penetrating the stage 14 are provided. The elevating pins 31 are driven up and down by a drive mechanism 32A conceptually shown only in FIG. The lifting pins 31 perform an operation of placing the carrier 5 on the placement surface 26 of the stage 14 and an operation of lowering the carrier 5 from the placement surface 26. As shown by the broken line in FIG. 1, the elevating pin 31 can be raised to a position protruding from the stage 14, and at this height position, a carrier carrier is transferred to and from a transfer mechanism (not shown) that advances and retreats from the entrance 4b to the processing chamber 4a. Delivery with 5 is performed. Further, the elevating pin 31 can be lowered to the storage position where the tip constitutes the same surface as the placement surface 16 of the transport carrier 5. When the elevating pins 31 are in the retracted position, the transport carrier 5 is placed on the placement surface 26.

  A cover 33 that can be moved up and down is provided above the placement surface 16 of the stage 14 in the processing chamber 4 a of the chamber 4. A plurality of lifting rods 34 for lifting the cover 33 are provided through the second exterior portion 22B of the stage 14. A cover 33 is connected to the upper end of the lifting rod 34. The elevating rod 34 is driven up and down by the drive mechanism 32B conceptually shown only in FIG. Specifically, the cover 33 is movable between an ascending position (first position) indicated by a broken line in FIG. 1 and a descending position (second position) indicated by a solid line in FIG. The cover 33 in the raised position is located above the placement surface 23 of the stage 14 with a sufficient interval. The cover 33 at the lowered position covers the holding sheet 6 (the annular region 6d excluding the portion holding the wafer 2) and the frame 7 of the transport carrier 5 at the regular position.

  Details of the cover 33 will be described. In the following description regarding the cover 33, when referring to the transport carrier 5 and the wafer 2 held by the transport carrier 5, the transport carrier 5 is disposed at the aforementioned normal position with respect to the mounting surface 26 of the stage 14 unless otherwise specified. Shall.

  The cover 33 has a circular outer contour and a certain thin thickness, and covers the holding sheet 6 and the frame 7 of the transport carrier 5 and protects them from plasma during plasma processing. For this reason, the cover 33 is formed sufficiently larger than the outer contour of the transport carrier 5. In the present embodiment, the cover 33 is made of a dielectric material such as ceramic.

  Referring to FIGS. 2 and 3, the upper surface 33b of the main body 33a of the cover 33 is formed with a tapered recess 33c that gradually decreases toward the center. A window 33e penetrating in the thickness direction from the upper surface 33b to the lower surface 33d is formed at the center of the tapered recess 33c. The window 33e is circular in plan view, and the center Cc of the circle coincides with the above-described centers Cs and Cw. The shape and dimensions of the window 33e are set so that the holding sheet 6 on the transport carrier 5 is not directly exposed to plasma generated as described later. The window 33e is shaped and dimensioned so that a gap 35 that allows the flow of process gas is defined between the inner end surface 33n that defines the window 33e in the main body 33a of the cover 33 and the outer peripheral edge of the wafer 2. Is set to be.

  Referring to FIGS. 2 and 3, a cover-side protrusion 33 g is formed on the outer peripheral surface of the lower surface 33 d of the main body 33 a of the cover 33. The cover-side protrusion 33g protrudes downward toward the second exterior portion 22 of the stage 14 and has a narrow ring shape in plan view. In other words, the cover-side protrusion 33g protrudes downward from the main body 33a of the cover 33 and has a cylindrical shape with a low height and a relatively thin thickness. The front end surface (lower end surface) of the cover-side protrusion 33g is formed with a flat and narrow ring-shaped contact surface 33f. As shown most clearly in FIG. 3, when the cover 33 is in the lowered position, the cover 33 and the stage 14 are in contact with each other. Specifically, the contact surface 33f of the cover-side protruding portion 33g and the contact surface (stage-side receiving portion) 22b on the stage 14 side are touched. In the present embodiment, the contact surface 22b is a region in the vicinity of the outer peripheral portion of the upper surface of the second exterior portion 22B (flat and narrow ring shape), and the outermost peripheral edge portion on the upper surface of the second exterior portion 22B includes: An edge 22c that protrudes upward toward the cover 33 is provided so as to surround the contact surface 22b. The edge portion 22c has a cylindrical shape whose height is sufficiently lower than that of the cover side protruding portion 33g and whose thickness is sufficiently lower than that of the cover side protruding portion 33g.

  The lower surface 33d of the main body 33a of the cover 33 includes a ceiling surface 33i extending in parallel with the upper surface of the frame 7 from the upper end of the inner peripheral surface 33h of the cover-side protruding portion 33g toward the central portion. The lower surface 33d of the main body 33a of the cover 33 is provided with an inclined surface 33j extending obliquely downward so that the thickness of the main body 33a is substantially constant at a portion corresponding to the tapered recess 33c from the ceiling surface 33i. Yes. The aforementioned inner end surface 33n extending from the inclined surface 33j closest to the upper surface of the transport carrier 5 is provided.

  As shown most clearly in FIG. 3, when the cover 33 is in the lowered position described later, the lower surface 33d of the main body 33a of the cover 33 (including both the ceiling surface 33i and the inclined surface 33j) and the cover side projection 33g A space 36 surrounding the frame 7 and the holding sheet 6 of the transport carrier 5 is formed by the peripheral surface 33h. This space 36 is opened by a gap 35 and is in fluid communication with a region above the wafer 2 in the processing chamber 4 a of the chamber 4.

  The control device 38 schematically shown only in FIG. 1 includes first and second high-frequency power supplies 13A and 13B, a process gas source 15, an ashing gas source 16, a decompression mechanism 17, a cooling device 27, a DC power supply 29, and a drive mechanism. The operation of the elements constituting the dry etching apparatus 1 including 32A and 32B is controlled.

  Next, operation | movement of the dry etching apparatus 1 of this embodiment is demonstrated.

  First, the transfer carrier 5 having the wafer 2 adhered to the center of the circular area 6 c of the holding sheet 6 is carried into the processing chamber 4 a of the chamber 4 by a transfer mechanism (not shown), delivered to the lift pins 31, and the lift pins 31 are lowered. It arrange | positions in the regular position on the mounting surface 26 of the stage 14. FIG. At this time, the cover 33 is in the raised position (indicated by a broken line in FIG. 1).

  Subsequently, the elevating rod 34 is driven by the drive mechanism 32B, and the cover 33 is lowered from the raised position (indicated by the dotted line in FIG. 1) to the lowered position (indicated by the solid line in FIG. 1). When the cover 33 is in the lowered position, the holding sheet 6 and the frame 7 of the transport carrier 5 are covered with the cover 33, and the wafer 2 is exposed from the window 33e. Further, the contact surface 33 f of the cover 33 contacts the contact surface of the stage 14.

  Next, a DC voltage is applied from the DC power source 29 to the electrostatic chucking electrode 23 so that the wafer 2 can be held on the mounting surface 26 of the stage 14 (the upper end surface 21a of the electrode portion 21) by electrostatic chucking. .

  Further, while introducing the process gas for plasma dicing from the process gas source 15 into the processing chamber 4a of the chamber 4, the process gas is exhausted by the decompression mechanism 17, and the processing chamber 4a is maintained at a predetermined pressure. Thereafter, high frequency power is supplied from the high frequency power source 13A to the antenna 12 to generate plasma P in the processing chamber 4a and irradiate the wafer 2 exposed from the window 33e of the cover 33. At this time, a bias voltage is applied to the electrode part 21 (metal part 25) of the stage 14 from the high frequency power supply 13B. As the plasma is generated, the wafer 2 is electrostatically attracted and fixed to the mounting surface 26 of the stage 14. In a portion (street) exposed from the mask 3 of the wafer 2, the surface 2a to the back surface 2b are removed by the physicochemical action of radicals and ions in the plasma P, and the wafer 2 is divided into individual chips.

  Ashing is performed after plasma dicing is completed. While introducing the ashing process gas (for example, oxygen gas) from the ashing gas source 16 into the processing chamber 4a of the chamber 4, the pressure reducing mechanism 17 exhausts the processing gas to maintain the processing chamber 4a at a predetermined pressure. Thereafter, high-frequency power is supplied from the high-frequency power source 13 </ b> A to the antenna 12 to generate plasma P in the chamber 4 and irradiate the wafer 2 exposed from the window 33 e of the cover 33. The mask 3 is completely removed from the surface 2 a of the wafer 2 by the irradiation with the oxygen plasma P.

  During the plasma processing, the cover 33 is in the lowered position, and the wafer P exposed from the window 33e is irradiated with the plasma P. This plasma irradiation region is on the inner diameter side excluding the region covered by the main body 33a of the cover 33. is there. Therefore, the holding sheet 6 (especially the inner peripheral portion of the annular region 6d) positioned on the outer diameter side of the outer peripheral region of the wafer 2 is not exposed to the plasma P, and is prevented from being deformed or altered by heat. it can. Further, the etching efficiency of the wafer 2 is not lowered due to the concentration of the plasma P on the frame 7.

  During the plasma processing, the cover 33 is in the lowered position. Therefore, the cover 33 (the contact surface 33f of the cover-side protrusion 33g) is in contact with the stage 14 (the contact 22b provided on the second exterior portion 22B). Further, the frame 7 of the transport carrier 5 is placed in a space 36 defined by the lower surface 33d (including both the ceiling surface 33i and the inclined surface 33j) of the cover 33 and the inner peripheral surface 33h of the cover-side protrusion 33g. And the holding sheet 6 are positioned.

  During the plasma processing, the cover 33 is in the lowered position, and in this lowered position, the cover 33 (the contact surface 33h of the cover-side protrusion 33g) is in contact with the stage 14 (the contact surface 22b provided on the second exterior portion 22B). Contact. The heat generated in the cover 33 by being exposed to the plasma P is transmitted to the second exterior portion 22B which is the outermost layer of the stage 14 through this contact by heat transfer. The second exterior portion 22 of the stage 14 is heated by the heat transfer from the cover 33 to increase the temperature. By this temperature increase or heating, it is possible to effectively prevent deposits derived from the process gas ionized on the outer peripheral surface of the second exterior portion 22B of the stage 14 from depositing on the stage 14 and forming an adhesion film. Since it is not necessary to provide a means such as a heater for heating the stage 14, it is possible to realize adhesion film formation prevention easily and at low cost.

  As described above, the heat generated by exposure to the plasma P is caused by the contact between the cover 33 (the contact surface 33h of the cover-side protrusion 33g) and the stage 14 (the contact surface 22b provided on the second exterior portion 22B). Is transmitted to the stage 14. In other words, the heat generated in the cover 33 due to the exposure to the plasma P is radiated to the stage 14 and the cover 33 is cooled. The cover 33, particularly the inner end surface 33 n, faces the outer peripheral edge portion of the wafer 2 through the gap 35. Therefore, by cooling the cover 33 by heat radiation to the stage 14, the influence on the radiant heat from the cover 33 to the outer peripheral edge of the wafer 2 can be suppressed.

(Second Embodiment)
In the dry etching apparatus 1 according to the second embodiment of the present invention shown in FIG. 4, the contact surface 33 f of the cover-side protrusion 33 g is made of a material having better thermal conductivity than the other parts of the cover 33. A heat transfer layer 39 is provided. By providing this heat transfer layer 39, the cover 33 (the contact surface 33h of the cover-side protrusion 33g) and the stage 14 (the contact surface 33h provided on the second exterior portion 22B) contact with each other from the cover 33 to the stage 14. Heat dissipation efficiency can be improved. As a result, the heating efficiency of the stage 14 (second exterior part 22B) by heat transfer from the cover 33 is improved, and the formation of an adhesion film on the outer peripheral surface of the second exterior part 22B of the stage 14 can be prevented more effectively. Further, since the cooling efficiency of the cover 33 is also improved, the influence on the radiant heat from the cover 33 to the outer peripheral edge of the wafer 2 can be more effectively suppressed.

  Other configurations and operations of the second embodiment are the same as those of the first embodiment.

(Third embodiment)
In the dry etching apparatus 1 according to the third embodiment of the present invention shown in FIG. 5, the stage 14 moves up and down while the cover 33 is fixed. Specifically, the cover 33 is fixed to the chamber 4. In FIG. 5, the cover 33 is fixed to the side wall of the chamber 4, but the fixing position and fixing method of the cover 33 are not particularly limited. The stage 14 is driven up and down by a conceptually shown drive mechanism 32C.

  The cover 33 is not provided with a cover-side protrusion 33 g (see, for example, FIG. 2) as in the first embodiment, and the ceiling surface 33 i extends to the outer peripheral edge of the cover 33.

  A stage-side protrusion 22d is formed on the upper surface of the second exterior portion 22B of the stage 14 (the outer periphery of the stage 14). The stage-side protrusion 22d protrudes upward toward the cover 33 and has a narrow ring shape in plan view. In other words, the stage-side protruding portion 22d has a cylindrical shape that protrudes upward from the second exterior portion 22B and has a low height and a relatively small thickness. The front end surface (upper end surface) of the stage-side protrusion 22d is formed with a flat and narrow ring-shaped contact surface 22f.

  When the stage 14 is in the lowered position, the cover 33 is in the raised position relative to the stage 14. A space is provided between the cover 33 and the stage 14 in the raised position so that the wafer 2 can be transferred and the stage 14 can be placed on the mounting surface 26 by the lift pins 31.

  During the plasma processing, the stage 14 is in the raised position, and the cover 33 is in the lowered position relative to the stage 14. At this position, the contact surface 22f of the stage side protrusion 22d contacts the contact surface 33m on the cover 33 side which is a part of the ceiling surface 33i of the cover 33. The stage 14 (second exterior portion 22B) is heated by heat transfer from the cover 33 through this contact, and the formation of an adhesion film can be prevented. Further, although the temperature suppression of the cover 33 is suppressed to some extent by the heat transfer from the cover 33 to the chamber 4, the cover 33 is efficiently cooled by the heat transfer through the contact with the stage 14, and the The influence on the radiant heat to the outer peripheral edge is suppressed. In the third embodiment, the contact surface 33m is a cover-side receiving portion that comes into contact with the tip (contact surface 22f) of the stage-side protrusion 22d. In the third embodiment, the stage-side protrusion 22d is provided on the outer periphery of the stage 14, but a cover-side protrusion that protrudes downward is provided at a position corresponding to the contact surface 33m of the cover 33, and the stage 14 side Further, a stage-side receiving portion that contacts the cover-side protrusion may be provided. In this case, the stage side receiving portion does not need to be a “projection”.

  A heat transfer layer similar to the heat transfer layer 39 of the third embodiment is provided on the contact surface 22f at the tip of the stage side protrusion 22d to improve the heating efficiency of the stage 14 by heat transfer from the cover 33 and the cooling efficiency of the cover 33. May be.

  Other configurations and operations of the third embodiment are the same as those of the first embodiment.

  The present invention is not limited to the above embodiment, and various modifications can be made.

  The cover 33 is composed of a single material as a whole. For example, the cover 33 may be a composite of a material having excellent heat resistance and a material having excellent heat conduction.

  The process executed by the dry etching apparatus 1 is not limited to plasma dicing and ashing, and may be, for example, normal dry etching. The dry etching apparatus is not limited to the ICP type as in the embodiment, and may be a parallel plate type. Furthermore, the present invention is not limited to a dry etching apparatus, but can be applied to other plasma processing apparatuses such as a CVD apparatus.

1 Dry Etching Equipment 2 Wafer (Substrate)
2a Front surface 2b Back surface 3 Mask 4 Chamber 4a Processing chamber 4b Entrance / exit 4c Exhaust port 5 Transport carrier 6 Holding sheet 6a Adhesive surface 6b Non-adhesive surface 6c Circular region 6d Annular region 7 Frame 8 Heater 9 Inner chamber 11 Dielectric wall 11a Gas inlet 12 Antenna (plasma source)
13A, 13B High-frequency power supply unit 14 Stage 15 Process gas source (gas supply means)
16 Ashing gas source (gas supply means)
17 Pressure reducing mechanism (pressure reducing means)
21 Electrode portion 21a Upper end surface 22A First exterior portion 22B Second exterior portion 22a Upper end surface 22b Contact surface (stage side receiving portion)
22c Edge 22d Stage-side protrusion 22f Contact surface 23 Electrostatic adsorption electrode 24 Dielectric part 25 Metal part 25a Refrigerant flow path 26 Placement surface 27 Cooling device 28 Refrigerant circulation device 29 DC power supply 31 Lifting pins 32A, 32B, 32C Drive mechanism 33 Cover 33a Main body 33b Upper surface 33c Tapered recess 33d Lower surface 33e Window portion 33g Cover side protrusion 33f Contact surface (cover side receiving portion)
33h Inner peripheral surface 33i Ceiling surface 33j Inclined surface 33k Outer peripheral surface 33m Contact surface 33n Inner end surface 34 Lifting rod 35 Gap 36 Space 38 Controller 39 Heat transfer layer Cs, Cw, Cc Center P Plasma

Claims (6)

A plasma processing apparatus for performing plasma processing on a substrate held by a carrier having an annular frame and a holding sheet,
A chamber having a process chamber capable of depressurization;
Decompression means for decompressing the processing chamber;
Gas supply means for supplying a plasma generating gas to the processing chamber;
A plasma source for generating plasma in the processing chamber;
A stage provided in the chamber and on which the carrier is placed;
A cover provided with a main body for covering the holding sheet and the frame of the transport carrier placed on the stage, and a window formed to penetrate the main body in the thickness direction;
A relative position of the cover with respect to the stage; a first position that allows the transport carrier to be loaded and unloaded from the stage; and the holding sheet of the transport carrier placed on the stage; A drive mechanism that covers the frame and can be set to a second position where the window portion exposes the substrate held by the holding sheet;
A contact portion for contacting the main body and the outer periphery of the stage outside the transport carrier placed on the stage when the cover is in the second position;
A plasma processing apparatus, wherein heat generated in the cover by the plasma is transmitted to the outer peripheral portion via the contact portion, thereby heating the stage. The contact portion is
A cover-side protrusion provided on the cover and protruding toward the outer periphery of the stage;
The plasma processing apparatus according to claim 1, further comprising: a stage-side receiving portion that is provided on the stage and that contacts a tip of the cover-side protrusion when the cover is in the second position. The stage is provided with the electrode portion to which the conveying carrier is mounted, and an exterior portion of the outermost layer surrounding the including parts min the electrode portion,
The plasma processing apparatus according to claim 2, wherein the stage-side receiving portion is provided in the outermost exterior portion. The contact portion is
A stage-side protrusion provided on the outer periphery of the stage and protruding toward the cover;
The plasma processing apparatus according to claim 1, further comprising: a cover-side receiving portion that is provided on the cover and contacts the tip of the stage-side protruding portion when the cover is in the second position. The stage is provided with the electrode portion to which the conveying carrier is mounted, and an exterior portion of the outermost periphery surrounding the including parts min the electrode portion,
The plasma processing apparatus according to claim 4, wherein the stage-side protruding portion is provided in an exterior portion of the outermost layer. A plasma processing method for performing plasma processing on a substrate held by a carrier carrying an annular frame and a holding sheet,
The transport carrier holding the substrate is carried into a chamber of a plasma processing apparatus and placed on a stage,
The transport carrier is covered with a cover including a main body for covering the holding sheet and the frame of the transport carrier placed on the stage, and a window portion formed to penetrate the main body in the thickness direction. , Outside the transport carrier placed on the stage, the main body and the outer periphery of the stage are brought into contact at a contact portion,
Plasma is generated in the chamber and the substrate is subjected to plasma treatment through the window, and heat generated in the cover by the plasma is transmitted to the outer peripheral portion through the contact portion, thereby A plasma processing method for heating the stage.

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