JP6145976B2 - Adhesive film and method for manufacturing semiconductor device - Google Patents

Description

  The present invention relates to an adhesive film and a method for manufacturing a semiconductor device.

  In recent years, along with miniaturization and high performance of semiconductor elements, miniaturization and densification are also required for members used around the elements. Conventionally, silver paste has been used in response to such demands. However, it is difficult to control the thickness of the adhesive layer due to the problem of wire bonding caused by the protrusion of the silver paste or the inclination of the semiconductor element, and the adhesive layer. There were various problems such as generation of voids. In order to solve these problems and simplify the process, an adhesive film having both a semiconductor wafer fixing function using a film adhesive and a semiconductor element adhesive function has been proposed (see, for example, Patent Documents 1 and 2). ).

  When such an adhesive film is used, after dicing the semiconductor wafer, a chip-shaped semiconductor element can be picked up with an adhesive layer attached to the back side. Thereafter, the semiconductor element is mounted on a lead frame or an organic substrate, and the adhesive layer is cured by heating or the like, thereby enabling so-called direct die bonding.

  A base film used for a normal pressure-sensitive adhesive film is subjected to surface treatment in order to improve adhesion between the pressure-sensitive adhesive film and the base film. Specifically, the surface of the base film is oxidized and modified by ozone generated by a surface treatment device using a corona discharge, a low-pressure mercury lamp, or a material called a primer is applied to the surface of the base film. The technique to take is taken. However, in the case of the above-mentioned adhesive film, since the peel strength between the adhesive layer and the substrate film is necessary, the surface treatment is not usually performed.

JP-A-2-32181 Japanese Patent Laid-Open No. 10-8001

  In the conventional adhesive film, transfer of the adhesive layer to a jig (dicing frame) repeatedly used for fixing the semiconductor wafer during dicing may occur. Measures for preventing transfer include (1) bonding another adhesive tape for preventing transfer, (2) applying a surface treatment to a predetermined portion of the base film, (3) adhesive layer It is conceivable that the tackiness of the resin is lowered from the composition stage. However, (1) is an increase in cost, (2) is difficult to ensure the accuracy of the position where the surface treatment is performed, and workability is lowered, and (3) is a decrease in peel strength from the base film. It has become.

  The present invention has been made in order to solve the above-mentioned problems. An adhesive film capable of achieving both suppression of transfer of an adhesive layer and securing of peel strength with a base film with a simple configuration, and the present invention It is an object of the present invention to provide a method for manufacturing a semiconductor device using the above.

  In order to solve the above problems, an adhesive film according to the present invention includes a base film and an adhesive layer having a single composition formed on one surface side of the base film, When the tack strength at 30 ° C. of one side facing the base film side is FA and the tack strength at 30 ° C. of the other side is FB, FA> FB and 10 gf ≦ FB ≦ 800 gf are satisfied.

  In this adhesive film, the tack strength FA on one side facing the base film side and the tack strength FB on the other side satisfy FA> FB and 10 gf ≦ FB ≦ 800 gf. Thereby, while ensuring the peeling strength of an adhesive layer and a base film, it becomes possible to suppress generation | occurrence | production of transfer of the adhesive layer with respect to a dicing frame. Further, since no separate member is used, the configuration is not complicated, and the cost can be reduced.

  Moreover, it is preferable that tack strength is a tack strength with respect to the surface which consists of SUS304 with a diameter of 5.1 mm. In this case, occurrence of transfer of the adhesive layer to the dicing frame can be more reliably suppressed.

  Moreover, it is preferable that 90 degree peeling strength in 25 degreeC between a base film and one side of an adhesive bond layer is 40 N / m or more. Thereby, the peel strength of the adhesive layer with respect to the base film becomes more suitable.

  Moreover, it is preferable that the adhesive layer is formed by irradiating radiation from one side after applying and drying a varnish containing a predetermined resin composition on a carrier film. Thereby, a difference can be provided in the tack strength of an adhesive layer by a simple method.

The semiconductor device manufacturing method according to the present invention includes a dicing step in which the other surface of the adhesive film is bonded to a dicing frame and a semiconductor wafer, and the semiconductor wafer is diced, and the adhesive obtained in the dicing step. A pickup step of picking up the semiconductor element with a layer and fixing it to the adherend, and a film peeling step of peeling the adhesive film from the dicing frame after the pickup step are provided.

  In this method for manufacturing a semiconductor device, the peel strength between the adhesive layer and the substrate film is ensured in the adhesive film to be used. Therefore, it is possible to prevent problems such as chip skipping during dicing. In addition, when the adhesive film is peeled from the dicing frame, it is possible to suppress the occurrence of transfer of the adhesive layer to the dicing frame.

  According to the present invention, it is possible to achieve both suppression of transfer of the adhesive layer and securing of adhesion to the base film with a simple configuration.

It is sectional drawing which shows the structure of the adhesive film which concerns on one Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the adhesive film shown in FIG. It is sectional drawing which shows the manufacturing method of the semiconductor device using the adhesive bond film shown in FIG. FIG. 4 is a cross-sectional view showing a step subsequent to FIG. 3. FIG. 5 is a cross-sectional view showing a step subsequent to FIG. 4. FIG. 6 is a cross-sectional view showing a step subsequent to FIG. 5. FIG. 7 is a cross-sectional view showing a step subsequent to FIG. 6. It is a figure which shows the result of the effect confirmation test of this invention.

  Hereinafter, preferred embodiments of a method for producing an adhesive film and a semiconductor device according to the present invention will be described in detail with reference to the drawings.

  FIG. 1 is a cross-sectional view showing a configuration of an adhesive film according to an embodiment of the present invention. As shown in the figure, the adhesive film 1 includes a base film 11, a carrier film 12, and an adhesive layer 13. The base film 11 is laminated on the one surface 13 </ b> A side of the adhesive layer 13, and the carrier film 12 is laminated on the other surface 13 </ b> B side of the adhesive layer 13. The adhesive film 1 is configured as a dicing die bonding film used for dicing a semiconductor wafer and die bonding a semiconductor element in a semiconductor device manufacturing process.

  The base film 11 is a film that is a strength matrix of the adhesive film 1. The base film 11 is preferably a film that can ensure the amount of expansion and contraction when tension in the pulling direction is applied. For example, a polyolefin film is used. In addition, for example, a film made of polyethylene, polypropylene, polyester, polycarbonate, ethylene-vinyl acetate copolymer, ethylene-propylene copolymer, ethylene-ethyl acrylate copolymer, polyvinyl chloride, or a mixture thereof is used. be able to. The thickness of the base film 11 is not particularly limited, but is preferably about 5 μm to 200 μm, for example.

  The carrier film 12 is not particularly limited as long as it can withstand heating and drying described later. For example, a polyester film, a polypropylene film, a polyethylene terephthalate film, a polyimide film, a polyetherimide film, a polyether naphthalate film, methyl A pentene film or the like can be used. In addition, a multilayer film in which two or more of these films are combined may be used, and the surface may be treated with a release agent such as silicone or silica.

  The adhesive layer 13 is a layer having a single composition, and has a thickness of about 3 μm to 200 μm, for example. The adhesive layer 13 has a high tack surface 16 and a low tack surface 17 having different tack strengths. More specifically, in the adhesive layer 13, the tack strength at 30 ° C. on the one surface 13A side where the base film 11 is provided is FA, and the 30 ° C. on the other surface 13B side where the carrier film 12 is provided. When tack strength is FB, FA> FB and 10 gf ≦ FB ≦ 800 gf are satisfied. Further, the 90 ° peel strength at 25 ° C. between the base film 11 and the one surface 13A of the adhesive layer 13 is 40 N / m or more.

The tack strengths FA and FB here refer to tack strength with respect to a surface made of SUS304 (austenitic stainless steel containing 18% Cr and 8% Ni) having a diameter of 5.1 mm. This tack strength is, for example, using a tacking tester (manufactured by Reska Co., Ltd.) with a pressure of 1 atm, a temperature of 40 ° C., an indentation speed of 2 mm / sec, a pulling speed of 10 mm / sec, a stop load of 100 gf / cm ² , and a stop time of 1 second. Measured at conditions.

  The FA is not particularly limited as long as the above relationship is satisfied, but from the viewpoint of preventing problems such as chip skipping during dicing, FA ≧ 800 gf is preferable, and FA ≧ 1000 gf. Is more preferable, and it is particularly preferable that FA ≧ 1200 gf.

  On the other hand, with respect to FB, it is important to satisfy the above-mentioned relationship, but 50 gf ≦ FB ≦ 600 gf is more preferable, and 100 gf ≦ FB ≦ 400 gf is particularly preferable. When FB <10 gf, the temperature at the time of sticking the adhesive film 1 to the semiconductor wafer tends to be high (temperature exceeding 100 ° C.). Further, if FB <10 gf, the adhesive force with the dicing frame tends to be insufficient, and the adhesive film 1 and the dicing frame may be separated in the manufacturing process of the semiconductor device.

  In addition, it is preferable that the sticking temperature to a semiconductor wafer is below the softening temperature of the protective tape and base film 11 of a semiconductor wafer. Moreover, from the viewpoint of suppressing warpage of the semiconductor wafer due to thermal stress, the pasting temperature is preferably 20 ° C to 100 ° C, more preferably 20 to 90 ° C, and particularly preferably 20 to 80 ° C. If the adhesive film 1 is used, it becomes possible to affix the adhesive film 1 to a semiconductor wafer at low temperature (100 degrees C or less). Thereby, the adhesive film 1 can be affixed to the semiconductor wafer while sufficiently suppressing the warp of the ultrathin semiconductor wafer that is easily affected by the warp.

  In forming such an adhesive layer 13, for example, as shown in FIG. 2, first, a varnish containing a resin composition and an organic solvent for forming the adhesive layer 13 is applied on the carrier film 12. . The varnish is prepared by mixing and kneading the resin composition in an organic solvent. Mixing and kneading can be carried out by appropriately combining dispersers such as a normal stirrer, a raking machine, a three-roller, and a ball mill.

  The organic solvent is not limited as long as it can uniformly dissolve, knead or disperse the material. For example, dimethylformamide, dimethylacetamide, N-methyl-2-pyrrolidone, dimethyl sulfoxide, diethylene glycol dimethyl ether, toluene, benzene, xylene, methyl ethyl ketone Methyl isobutyl ketone, tetrahydrofuran, ethyl cellosolve, ethyl cellosolve acetate, butyl cellosolve, dioxane, cyclohexanone, ethyl acetate and the like can be used.

  Next, the varnish applied to the carrier film 12 is heated and dried to form a film. The heating conditions are not particularly limited as long as the used organic solvent is sufficiently volatilized, but usually heating is performed at a temperature of 50 ° C. to 200 ° C. for about 0.1 minutes to 90 minutes.

Thereafter, the adhesive layer 13 on the carrier film 12 is irradiated with radiation. The radiation used is not particularly limited, but for example, ultraviolet rays, far ultraviolet rays, near ultraviolet rays, visible rays, electron beams, infrared rays, near infrared rays, etc., which are active rays having a wavelength range of 150 nm to 750 nm, are used. Can do. These radiation, low pressure mercury lamp, medium pressure mercury lamps, high pressure mercury lamp, ultra-high pressure mercury lamp, a xenon lamp, a metal halide lamp, black light, using light emitting diodes, for example, be irradiated at 0.01J ^/ cm ² ~10000J ^/ cm 2 Can do.

  Although there is no restriction | limiting in particular as a light source of an ultraviolet-ray, A low pressure mercury lamp, a medium pressure mercury lamp, a metal halide lamp, a xenon flash lamp, an excimer lamp, a UV discharge lamp, a black light, a light emitting diode etc. can be used. It is preferable to use a black light having a narrow wavelength width emitted from a light source.

Although there is no restriction | limiting in particular about the irradiation method of a radiation, From a viewpoint of fully obtaining the tack strength difference of the high tack surface 16 and the low tack surface 17 of the adhesive layer 13, from a carrier film 12 side, as shown in FIG. Irradiation is preferred. As a result, the tack strength of the surface on the carrier film 12 side in the adhesive layer 13 is reduced by polymerizing by radiation polymerization reaction, while the tack strength of the opposite surface is maintained by inhibiting radiation curing due to oxygen in the air. be able to. Then, the adhesive film 1 shown in FIG. 1 is obtained by bonding the base film 11 to the high tack surface 16 side.

  The total thickness of the adhesive film 1 is not particularly limited, but is preferably 3 μm to 200 μm. If it is thinner than 3 μm, the stress relaxation effect tends to be poor, and if it is thicker than 200 μm, it is not economical, and it may not be possible to meet the demand for downsizing of the semiconductor device. The total thickness of the adhesive layer 13 and the base film 11 is preferably about 8 μm to 400 μm, and more preferably about 10 μm to 250 μm. If the base film 11 is set to have the same thickness as the adhesive layer 13 or slightly thicker, the workability is improved.

  Next, the composition of the adhesive layer 13 will be described.

  The adhesive layer 13 contains a thermosetting component, a thermoplastic resin, a compound that generates a reactive atomic group or molecular group by radiation irradiation, a radiation polymerization compound, and an additive.

  Examples of the thermosetting component include an epoxy resin, a urea resin, and a melamine resin polyester. However, the thermosetting component is not particularly limited as long as it is cured and has an adhesive action. For example, as an epoxy resin, a bifunctional epoxy resin such as a bisphenol A type epoxy, a novolac type epoxy resin such as a phenol novolac type epoxy resin or a cresol novolac type epoxy resin, or the like can be used. Moreover, what is generally known, such as a polyfunctional epoxy resin, a glycidyl amine type epoxy resin, a heterocyclic ring-containing epoxy resin, or an alicyclic epoxy resin, can be applied.

  As the epoxy resin, if it is a bisphenol A type epoxy resin, Epicoat 807, 815, 825, 827, 828, 834, 1001, 1004, 1007, 1009 manufactured by Yuka Shell Epoxy Co., Ltd., DER-330 manufactured by Dow Chemical Co., Ltd. 301, 361, YD8125, YDF8170 manufactured by Toto Kasei Co., Ltd., and the like. Moreover, if it is a phenol novolak-type epoxy resin, Yuka Shell Epoxy Co., Ltd. Epicoat 152,154, Nippon Kayaku Co., Ltd. EPPN-201, Dow Chemical Co., Ltd. DEN-438, etc. are mentioned.

  Moreover, if it is o-cresol novolak type epoxy resin, Nippon Kayaku Co., Ltd. EOCN-102S, 103S, 104S, 1012,1025,1027, Toto Kasei Co., Ltd. YDCN700-2,700-3,700- 5,700-7,700-10,704,704A etc. are mentioned. If it is a polyfunctional epoxy resin, Epon 1031S manufactured by Yuka Shell Epoxy Co., Ltd., Araldite 0163 manufactured by Ciba Specialty Chemicals, Denacol EX-611, 614, 614B, 622, 512, 521, 421 manufactured by Nagase Kasei Co., Ltd. 411, 321 and the like.

  Examples of the high-functional epoxy resin include HP-4032, 4032D, 7200L, 7200, 4700, 4770, 820, EXA-4850-150, and 4850-1000 manufactured by DIC Corporation. If it is an amine type epoxy resin, Epiquat 604 manufactured by Yuka Shell Epoxy Co., Ltd., YH-434 manufactured by Tohto Kasei Co., Ltd., TETRAD-X, TETRAD-C manufactured by Mitsubishi Gas Chemical Co., Ltd., manufactured by Sumitomo Chemical Co., Ltd. ELM-120 etc. are mentioned. Examples of the heterocyclic ring-containing epoxy resin include Araldite PT810 manufactured by Ciba Specialty Chemicals, and ERL4234, 4299, 4221, and 4206 manufactured by UCC. These epoxy resins can be used alone or in combination of two or more.

  As the curing agent for the thermosetting component, known curing agents that are usually used can be used. For example, bisphenols having two or more phenolic hydroxyl groups in one molecule such as amines, polyamides, acid anhydrides, polysulfides, boron trifluoride, bisphenol A, bisphenol F, bisphenol S, phenol novolac resins, bisphenol A novolac resins, And phenol resins such as cresol novolac resin. In particular, phenol resins such as phenol novolak resin, bisphenol A novolak resin, and cresol novolak resin are preferably used in terms of excellent electric corrosion resistance at the time of moisture absorption.

  If it is a phenol resin curing agent, for example, TD-2131, 2106, 2093, 2091, 2090, 2149, 2090-60M, 2093-60M, VH-4150, 4170, 4240, KH-6021, KA- manufactured by DIC Corporation. 1160, 1163, 1165, LF-2882, 2822, 4711, 6161, 4871, XL-225-3L, XLC-LL, 3L, 4L manufactured by Mitsui Chemicals, Inc. MEH-7800M, 7800S manufactured by Meiwa Kasei Co., Ltd. 7800SS, HE200C-10,17, HE610C-07, HE100C-10,12,15,30, HE112C-05, HE510-05,04, HE910-10,20, Gunei Chemical Co., Ltd. manufactured by Air Water Chemical Co., Ltd. PSM-4324, 4326, 4357, 6200 manufactured by Etc.

  The thermoplastic resin is not particularly limited as long as it is a resin that has thermoplasticity at least in an uncured state and forms a crosslinked structure after heating, but a (meth) acrylic copolymer having a functional group in terms of improving adhesiveness. Coalescence is preferred. (Meth) acrylic means to include both acrylic and methacrylic. As the functional group, a glycidyl group, an acryloyl group, a methacryloyl group, a carboxyl group, a hydroxyl group, and an episulfide group are preferable. Among them, a glycidyl group is preferable in terms of crosslinkability. Specific examples include glycidyl group-containing (meth) acrylic copolymers having a weight average molecular weight of 100,000 or more.

  Moreover, it is preferable that it is incompatible with an epoxy resin at the point of reflow resistance. When an epoxy resin is used as the thermosetting component, if the component is incompatible with the epoxy resin, the rubber layer made of the (meth) acrylic copolymer having a functional group becomes the “sea” of the sea-island structure, and the epoxy The resin layer tends to be an “island”. Thereby, rubber characteristics are expressed and stress relaxation properties are improved. However, since the compatibility is not determined only by the characteristics of the high molecular weight component, a combination in which both are not compatible is selected.

  As the copolymer, acrylic rubber can also be used. The acrylic rubber is preferably formed by copolymerization of a monomer mainly composed of an acrylic ester and selected from (meth) acrylic ester and acrylonitrile. Examples of (meth) acrylic acid esters include methyl acrylate, ethyl acrylate, propyl acrylate, isopropyl acrylate, butyl acrylate, isobutyl acrylate, hexyl acrylate, cyclohexyl acrylate, 2-ethylhexyl acrylate, lauryl acrylate, methyl methacrylate, ethyl methacrylate, and propyl methacrylate. Isopropyl acrylate, butyl methacrylate, isobutyl methacrylate, hexyl methacrylate, cyclohexyl methacrylate, 2-ethylhexyl methacrylate, lauryl methacrylate and the like. Specific examples of the copolymer based on a combination of monomers include a copolymer composed of butyl acrylate and acrylonitrile, and a copolymer composed of ethyl acrylate and acrylonitrile.

  When a glycidyl group is selected as the functional group, it is preferable to use a (meth) acrylic acid ester such as glycidyl acrylate or glycidyl methacrylate as the copolymer monomer component. Such a glycidyl group-containing (meth) acrylic copolymer can be produced by appropriately selecting a monomer from the above monomers, or a commercially available product (for example, HTR-860P-3-800,000 manufactured by Nagase ChemteX Corporation, HTR-860P-3-300,000, HTR-860P-5, etc.) can also be used.

  In thermoplastic resins, the number of functional groups is important because it affects the crosslink density. Although depending on the resin used, when the high molecular weight component is obtained as a copolymer of a plurality of monomers, the amount of the functional group-containing monomer used as a raw material is 0.5% by weight to 6.0% by weight with respect to the copolymer. % Is preferable.

  When the glycidyl group-containing acrylic copolymer is used as the thermoplastic resin, the amount of the glycidyl group-containing monomer such as glycidyl acrylate or glycidyl methacrylate used as a raw material is 0.5% by weight to 6.% by weight based on the copolymer. It is preferably 0% by weight, more preferably 0.5% by weight to 5.0% by weight, and particularly preferably 0.8% by weight to 5.0% by weight. . When the amount of the glycidyl group-containing repeating unit is within this range, since the glycidyl group gradually crosslinks, the adhesive force can be secured and gelation can be prevented. Moreover, since it becomes incompatible with the thermosetting component, as described above, it has excellent stress relaxation properties.

  In addition, other functional groups may be incorporated into glycidyl acrylate, glycidyl methacrylate, or the like to form a monomer. In this case, considering the glass transition temperature (hereinafter referred to as “Tg”) of the glycidyl group-containing (meth) acrylic copolymer, Tg is preferably −10 ° C. or higher. This is because when the Tg is −10 ° C. or higher, the tackiness of the adhesive layer in the B-stage state is suitable, and there is no problem in handling properties. When the above monomer is polymerized as the thermoplastic resin and the glycidyl group-containing acrylic copolymer is used, the polymerization method is not particularly limited, and for example, methods such as pearl polymerization and solution polymerization can be used.

  In addition, it is preferable that it is 50,000-2 million, and, as for the weight average molecular weight of a thermoplastic resin, it is more preferable that it is 100,000-1 million. When the weight average molecular weight is in this range, the strength, flexibility, and tackiness of a sheet or film are suitable. Further, the flow property is good, and the circuit filling property of the wiring can be secured. The weight average molecular weight here refers to a value measured by gel permeation chromatography and converted using a standard polystyrene calibration curve.

  There is no restriction | limiting in particular as a compound which generate | occur | produces a reactive atomic group or molecular group by irradiation, For example, the thing of radical polymerization, cationic polymerization, and anionic polymerization can be used. For example, isopropyl benzoin ether, isobutyl benzoin ether, benzophenone, Michler's ketone, chlorothioxanthone, dodecylthioxanthone, dimethylthioxanthone, diethylthioxanthone, benzyl dimethyl ketal, α-hydroxycyclohexyl phenyl ketone, 2-hydroxymethylphenylpropane, imidazole, 2,4-dimethyl Imidazole derivatives such as imidazole and 1-methylimidazole, piperazine derivatives such as piperazine and 2,5-dimethylpiperazine, piperidine derivatives such as piperidine and 1,2-dimethylpiperidine, proline derivatives, trimethylamine, triethylamine, triethanolamine and the like Alkylamine derivatives, 4-methylaminopyridine, 4-dimethylaminopyridine, etc. Such as pyridine derivatives substituted with an amino group or alkylamino group at the 4-position, pyrrolidine derivatives such as pyrrolidine and n-methylpyrrolidine, triethylenediamine, 1,8-diazabiscyclo (5,4,0) undecene-1 (DBU), etc. Alicyclic amine derivatives, benzylamine derivatives such as benzylmethylamine, benzyldimethylamine, and benzyldiethylamine can be used.

  Moreover, the compound which generate | occur | produces a base by irradiation can also be used. As the base to be generated, a strongly basic compound is preferable in terms of reactivity and curing speed. In general, a pKa value that is a logarithm of an acid dissociation constant is used as a basic index, and a base having a pKa value in an aqueous solution of 7 or more is preferable, and a base of 9 or more is more preferable.

  Examples of compounds that generate a basic compound upon irradiation are described in Journalof Photopolymer Science and Technology Vol. 12, 313-314 (1999), Chemistry of Materials 11, Vol. 170-176 (1999), etc. Ammonium salt derivatives can be used. Since these produce highly basic trialkylamines by irradiation with actinic rays, they are optimal for curing epoxy resins. Further, carbamic acid derivatives described in Journal of American Chemical Society 118, 12925 (1996), Polymer Journal 28, 95 (1996), and the like can be used.

  Furthermore, an oxime derivative that generates a primary amino group upon irradiation with actinic rays, and 2-methyl-1 (4- (methylthio) phenyl) -2-morpholinopropan-1-one that is commercially available as a photoradical generator , 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl) -butanone-1, hexaarylbisimidazole derivatives (substituents such as halogen, alkoxy group, nitro group, cyano group are substituted with phenyl group) Benzoisoxazolone derivatives and the like can also be used.

  In addition to base generators based on actinic rays, basic compounds are generated by photofleece rearrangement, photoclisen rearrangement (photocleisen rearrangement), curtius rearrangement (curtius rearrangement), and stevens rearrangement (Stevens rearrangement) to cure epoxy resins. Can also be done. Since these compounds do not show reactivity with an epoxy resin in a state where they are not irradiated with radiation at room temperature, they have a feature of excellent storage stability at room temperature.

  Examples of the radiation polymerization initiator include A0061, A1028, B0050, B0221, B3633, B0079, B0222, B1019, B1015, B0942, B0869, B0083, B0103, B1164, B1267, B2380, B2381, B1225, manufactured by Tokyo Chemical Industry Co., Ltd. B0139, B1275, B0481, C0014, C0136, C1150, C1485, C0292, D1801, D1621, D1640, D2375, D1702, D2963, D2248, D2238, D2253, D3358, E0063, F0021, F0362, H0617, H0991, P0211, 05 I0678, M1245, M2140, M0792, B1231, M1209, M2028, N0528, P141 P1377, B0486, T0157, T1188, T1608, T2041, T2042, IRGACURE 651, 184, 1173, 2959, 127, 907, 369, 379, 819, 784, OXE01, OXE02, 754, manufactured by Ciba Specialty Chemicals Co., Ltd. 500, 1800, 1870, 4265, 250, etc.

  There is no restriction | limiting in particular as a radiation polymerization compound, For example, methyl acrylate, methyl methacrylate, ethyl acrylate, ethyl methacrylate, butyl acrylate, butyl methacrylate, 2-ethylhexyl acrylate, 2-ethylhexyl methacrylate, pentenyl acrylate , Tetrahydrofurfuryl acrylate, tetrahydrofurfuryl methacrylate, diethylene glycol diacrylate, triethylene glycol diacrylate, tetraethylene glycol diacrylate, diethylene glycol dimethacrylate, triethylene glycol dimethacrylate, tetraethylene glycol dimethacrylate, trimethylolpropane diacrylate, tri Methylolpropane triacrylate, trimethylolpropane dimethacrylate , Trimethylolpropane trimethacrylate, 1,4-butanediol diacrylate, 1,6-hexanediol diacrylate, 1,4-butanediol dimethacrylate, 1,6-hexanediol dimethacrylate, pentaerythritol triacrylate, Pentaerythritol tetraacrylate, pentaerythritol trimethacrylate, pentaerythritol tetramethacrylate, dipentaerythritol hexaacrylate, dipentaerythritol hexamethacrylate, styrene, divinylbenzene, 4-vinyltoluene, 4-vinylpyridine, N-vinylpyrrolidone, 2-hydroxy Ethyl acrylate, 2-hydroxyethyl methacrylate, 1,3-acryloyloxy-2-hydroxypropane 1,2-methacryloyloxy-2-hydroxypropane, methylenebisacrylamide, N, N-dimethylacrylamide, N-methylolacrylamide, and a vinyl copolymer containing a triacrylate functional group of tris (β-hydroxyethyl) isocyanurate at least Radiation polymerizability having an ethylenically unsaturated group in the side chain obtained by addition reaction of a compound having one ethylenically unsaturated group and one functional group such as an oxirane ring, isocyanate group, hydroxyl group, carboxyl group, etc. Copolymerization or the like can be used. These radiation polymerization compounds can be used alone or in combination of two or more.

  As the radiation polymerization compound, A-LEN-10, AM-90G, 130G, AMP-20GY, A-SA, S-1800A, 701A, A-200, A-400, A-, manufactured by Shin-Nakamura Chemical Co., Ltd. 600, A-1000, A-B1206PE, ABE-300, A-BPE-10, A-BPE-20, A-BPE-30, A-BPE-4, ABPEF, A-BPP-3, A-DCP, A-DOD-N, A-HD-N, A-NOD-N, APG-100, APG-200, APG-400, A-PTMG-65, A-9300, A-9300-1CL, A-GLY- 9E, A-GLY-20E, A-TMM-3, A-TMM-3L, A-TMM-3LM-N, A-TMPT, AD-TMP, ATM-35E, A-TMMT, A-9550, A- DPH CB-1, M-90G, M-230G, PHE-1G, S, SA, S-1800M, 1G, 2G, 3G, 4G, 9G, 14G, 23G, BPE-80N, BPE-100, BPE-200, BPE-500, BPE-900, BPE-1300N, DCP, DOD-N, HD-N, NOD-N, NPG, 1206PE, 701, 9PG, TMPT, Toa Gosei (manufactured), M-101A, M-120, M-111, M-113, M-117, M-120, M-140, M-208, M-211B, M-215, M-220, M-225, M-270, M-240, M- 309, M-310, M-321, M-350, M-360, M-313, M-315, M-327, M-306, M-305, M-451, M-450, M-408, M-40 M-400, M-402, M-404, M-406, M-405, M-5300, M-5400, M-5700, M-510, M-520, M-1100, M-1200, M -1600, M-1960, M-6100, M-6200, M-6250, M-6500, M-7100, M-7300K, M-8030, M-8060, M-8100, M-8530, M-8560 , M-9050, manufactured by Hitachi Chemical Co., Ltd., FA-511A, 512A, 513A, BZA, 314A, 318A, 129A, P240A, P270A, 324A, 731A, 512M, 512MT, 513M, 711MM, 712HM, 400M, BZM , 124M, 125M, 220M, 321M, 023M, and the like.

  Furthermore, an inorganic filler, a coupling agent, an ion scavenger, or the like can be added to the adhesive layer 13 as necessary.

  The purpose of the inorganic filler is to improve handling properties, improve thermal conductivity, adjust melt viscosity, and impart thixotropic properties. The inorganic filler is not particularly limited. For example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, nitriding Examples thereof include boron, crystalline silica, and amorphous silica. These fillers can be used alone or in combination of two or more. Further, the shape of the filler is not particularly limited.

  Among the above-mentioned inorganic fillers, it is preferable to use aluminum oxide, aluminum nitride, boron nitride, crystalline silica, amorphous silica, or the like in order to improve thermal conductivity. For the purpose of adjusting melt viscosity and imparting thixotropic properties, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, crystallinity Silica, amorphous silica or the like is preferably used.

  The amount of the inorganic filler used is preferably 1 part by mass to 20 parts by mass with respect to 100 parts by mass of the adhesive layer 13. If the amount is less than 1 part by mass, the effect of addition tends not to be obtained. If the amount exceeds 20 parts by mass, the storage elastic modulus of the adhesive layer 13 increases, the adhesiveness decreases, the electrical characteristics decrease due to residual voids, etc. Tend to cause problems.

  The coupling agent is intended to improve interfacial bonding between different materials. Examples of the coupling agent include silane-based, titanium-based, and aluminum-based, and among them, a silane-based coupling agent is preferable because of its high effect.

  The silane coupling agent is not particularly limited. For example, vinyltrichlorosilane, vinyltris (β-methoxyethoxy) silane, vinyltriethoxysilane, vinyltrimethoxysilane, γ-methacryloxypropyltrimethoxysilane, γ-methacryloxy. Propylmethyldimethoxysilane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane N-β (aminoethyl) γ-aminopropyltrimethoxysilane, N-β (aminoethyl) γ-aminopropylmethyldimethoxysilane, γ-aminopropyltriethoxysilane, N-phenyl-γ-aminopropyltrimethyl Xysilane, γ-mercaptopropyltrimethoxysilane, γ-mercaptopropyltriethoxysilane, 3-aminopropylmethyldiethoxysilane, 3-ureidopropyltriethoxysilane, 3-ureidopropyltrimethoxysilane, 3-aminopropyltrimethoxysilane 3-aminopropyl-tris (2-methoxy-ethoxy-ethoxy) silane, N-methyl-3-aminopropyltrimethoxysilane, triaminopropyltrimethoxysilane, 3-4,5-dihydroimidazol-1-yl- Propyltrimethoxysilane, 3-methacryloxypropyl-trimethoxysilane, 3-mercaptopropylmethyldimethoxysilane, 3-chloropropylmethyldimethoxysilane, 3-chloropropyldimethoxysilane, 3-sia Propyltriethoxysilane, hexamethyldisilazane, N, O-bis (trimethylsilyl) acetamide, methyltrimethoxysilane, methyltriethoxysilane, ethyltrichlorosilane, n-propyltrimethoxysilane, isobutyltrimethoxysilane, amyltrichlorosilane, Octyltriethoxysilane, phenyltrimethoxysilane, phenyltriethoxysilane, methyltri (methacryloyloxyethoxy) silane, methyltri (glycidyloxy) silane, N-β (N-vinylbenzylaminoethyl) -γ-aminopropyltrimethoxysilane, Octadecyldimethyl [3- (trimethoxysilyl) propyl] ammonium chloride, γ-chloropropylmethyldichlorosilane, γ-chloropropylmethyldimethoxysilane Emissions, .gamma.-chloropropyl methyl diethoxy silane can be used trimethylsilyl isocyanate, dimethylsilyl isocyanate, methylsilyl triisocyanate, vinylsilyl triisocyanate, phenyl triisocyanate, tetraisocyanate silane, and ethoxysilane isocyanate. Moreover, these can also be used individually or in combination of 2 or more types.

  Examples of titanium-based coupling agents include isopropyl trioctanoyl titanate, isopropyl dimethacrylisostearoyl titanate, isopropyl tridodecylbenzenesulfonyl titanate, isopropyl isostearoyl diacryl titanate, isopropyl tri (dioctyl phosphate) titanate, isopropyl tricumyl phenyl titanate, Isopropyltris (dioctylpyrophosphate) titanate, isopropyltris (n-aminoethyl) titanate, tetraisopropylbis (dioctylphosphite) titanate, tetraoctylbis (ditridecylphosphite) titanate, tetra (2,2-diallyloxymethyl- 1-butyl) bis (ditridecyl) phosphite titanate, dicumyl fe Oxyacetate titanate, bis (dioctylpyrophosphate) oxyacetate titanate, tetraisopropyl titanate, tetranormal butyl titanate, butyl titanate dimer, tetra (2-ethylhexyl) titanate, titanium acetylacetonate, polytitanium acetylacetonate, titanium octet Len glycolate, Titanium lactate ammonium salt, Titanium lactate, Titanium lactate ethyl ester, Titanium chili ethanolamate, Polyhydroxytitanium stearate, Tetramethyl orthotitanate, Tetraethyl orthotitanate, Tetarapropyl orthotitanate, Tetraisobutyl orthotitanate, Stearyl titanate , Cresyl titanate monomer, cresyl titanate polymer, Isopropoxy-bis (2,4-pentadionate) titanium (IV), diisopropyl-bis-triethanolamino titanate, octylene glycol titanate, tetra-n-butoxytitanium polymer, tri-n-butoxytitanium monostearate polymer , Tri-n-butoxytitanium monostearate and the like can be used. Moreover, these can also be used individually or in combination of 2 or more types.

  Examples of the aluminum coupling agent include ethyl acetoacetate aluminum diisopropylate, aluminum toys (ethyl acetoacetate), alkyl acetoacetate aluminum diisopropylate, aluminum monoacetyl acetate bis (ethyl acetoacetate), aluminum tris (acetylacetonate) ), Aluminum = monoisopropoxymonooleoxyethyl acetoacetate, aluminum-di-n-butoxide monoethyl acetoacetate, aluminum chelate compound such as aluminum-di-iso-propoxide-monoethyl acetoacetate, aluminum isopropylate, mono -Sec-butoxyaluminum diisopropylate, aluminum-sec-butyrate, aluminium It may be used such as aluminum alcoholates such as ethylate. Moreover, these can also be used individually or in combination of 2 or more types.

  It is preferable that the usage-amount of the said coupling agent shall be 0.01 mass part-10 mass parts with respect to 100 mass parts of an epoxy resin and an epoxy resin hardening | curing agent from the surface of an effect, heat resistance, and cost.

  The purpose of the ion scavenger is to adsorb ionic impurities and improve insulation reliability during moisture absorption. Such an ion scavenger is not particularly limited. For example, a triazine thiol compound, a bisphenol-based reducing agent, or the like, a compound known as a copper damage inhibitor to prevent copper from being ionized and dissolved, or a zirconium-based agent. And inorganic ion adsorbents such as antimony bismuth-based magnesium aluminum compounds.

  Then, the manufacturing method of the semiconductor device using the adhesive film 1 mentioned above is demonstrated.

  First, as shown in FIG. 3, the carrier film 12 is peeled from the adhesive film 1, and the back surface side of the semiconductor wafer 21 is bonded to the low tack surface 17 of the adhesive film 1. A dicing frame 22 is bonded to the low tack surface 17 of the adhesive film 1 so as to surround the semiconductor wafer 21. The dicing frame 22 has a ring shape of about 12 inches, for example, and is formed of, for example, SUS304.

  Next, as shown in FIG. 4, the semiconductor wafer 21 is diced using a cutting device such as a dicing blade 23 (dicing step). A laser cutting device can also be used as the cutting device. At this time, the adhesive film 1 may be completely cut by dicing. The construction method for completely cutting the adhesive film 1 is called full cut. On the other hand, a construction method in which the adhesive film 1 is not completely cut but completely cut in the subsequent steps may be used. By dicing at a depth reaching the adhesive layer 13 from the semiconductor wafer 21, a plurality of semiconductor elements 24 with an adhesive layer are obtained.

  A known dicer or blade can be used as the cutting device. As the dicer, for example, a full automatic dicing saw 6000 series manufactured by Disco Corporation or a semi-automatic dicing saw 3000 series can be used. As the blade, for example, a dicing blade NBC-ZH05 series or NBC-ZH series manufactured by DISCO Corporation can be used. As the laser cutting device, for example, a full automatic laser saw 7000 series manufactured by DISCO Corporation can be used.

  Next, as shown in FIG. 5, the semiconductor element 24 with the adhesive layer is picked up using the pickup device 26 (pickup step). When picking up, radiation is irradiated toward the adhesive film 1 from the side opposite to the surface on which the semiconductor wafer 21 is bonded. Thereby, the peeling strength between the adhesive film 1 and the base film 11 falls, and the pick-up of the semiconductor element 24 with an adhesive layer can be performed smoothly.

As the radiation, for example, actinic rays having a wavelength region of 150 to 750 nm can be used. These actinic rays include ultraviolet rays, far ultraviolet rays, near ultraviolet rays, visible rays, electron beams, infrared rays, and near infrared rays. These include, for example a low-pressure mercury lamp, medium pressure mercury lamps, high pressure mercury lamp, ultra-high pressure mercury lamp, a xenon lamp, a metal halide lamp, black light, using a light-emitting diode can be irradiated with 0.01J / cm ² ~10000J / cm ² .

  As the pickup device, a known pickup die bonder can be used. As the pick-up die bonder, for example, Renesas East Japan Semiconductor's flexible die bonder DB-730 or DB-700, Shinkawa's die bonder SPA-300, SPA-400, Canon Machinery's BESTTEM-D02, or the like can be used.

  After the pick-up process, as shown in FIG. 6, the semiconductor element 24 with the adhesive layer is die-bonded to a support member (adhered body) 27. Further, the connection terminal of the semiconductor element 24 with the adhesive layer and the connection terminal of the support member 27 are electrically connected by the wire 28. And the semiconductor device 30 is obtained by sealing the semiconductor element 24 with an adhesive layer on the supporting member 27 with the sealing material 29.

  When performing die bonding, the adhesive layer 13 of the semiconductor element 24 with the adhesive layer is fixed to the support member 27 by heating and pressing. The heating temperature at this time is usually about 20 to 170 ° C., and the heating time is usually about 0.1 to 300 seconds. The load is usually about 0.01 kgf to 20 kgf. By heating, the adhesive layer 13 is cured, and the semiconductor element 24 with the adhesive layer and the support member 27 are firmly bonded. Note that the sealing with the sealing material 29 is not necessarily performed.

  On the other hand, as shown in FIG. 7, after picking up the semiconductor element 24 with an adhesive layer, the adhesive film 1 after use is peeled from the dicing frame 22 (film peeling step). In the adhesive film 1, the low tack surface 17 of the adhesive layer 13 is attached to the dicing frame 22, and the high tack surface of the adhesive layer 13 is attached to the base film 11. The workability in this case is ensured, and the adhesive layer 13 can be prevented from being transferred to the dicing frame 22.

  As described above, in this adhesive film 1, the tack strength FA of the one surface 13A facing the base film 11 side and the tack strength FB of the other surface 13B facing the base film 11 side are the following: FA> FB and 10 gf ≦ FB ≦ 800 gf are satisfied. Thereby, while the peeling strength of the adhesive layer 13 and the base film 11 is ensured, generation | occurrence | production of the transfer of the adhesive layer 13 with respect to the dicing frame 22 can be suppressed. Moreover, since another member is not used for the adhesive film 1, the configuration is not complicated, and the cost can be reduced.

  Moreover, in the adhesive film 1, it is preferable that tack strength is a tack strength with respect to the surface which consists of SUS304 with a diameter of 5.1 mm. In this case, occurrence of transfer of the adhesive layer 13 to the dicing frame 22 can be more reliably suppressed.

  In the adhesive film 1, the 90 ° peel strength at 25 ° C. between the base film 11 and the one surface 13A of the adhesive layer 13 is 40 N / m. Thereby, the peeling strength of the adhesive layer 13 with respect to the base film 11 becomes more suitable.

  In the adhesive film 1, the adhesive layer 13 is formed by applying and drying a varnish containing a predetermined resin composition on the carrier film 12 and then irradiating the carrier film 12 with radiation. Yes. Thereby, a difference can be provided in the tack strength of the adhesive layer 13 by a simple method.

  Next, the effect confirmation test of the present invention will be described.

  In this effect confirmation test, each sample of the adhesive film according to the example and the comparative example was created, and for each sample, whether or not the transfer to the dicing frame occurred, and peeling of the adhesive layer in the semiconductor device The presence or absence of voids was verified.

  In preparing the sample of Example 1, first, 15 parts by mass of YDCN-700-10 (trade name, o-cresol novolac type epoxy resin, epoxy equivalent 210, manufactured by Toto Kasei Co., Ltd.), Priorofen LF4871 (Dainippon Ink Chemical Co., Ltd.) Industrial Co., Ltd. trade name, bisphenol A novolac resin) 9 parts by mass, HTR-860P-3 (Teikoku Chemical Industry Co., Ltd. trade name, epoxy group-containing acrylic rubber, molecular weight 1 million, Tg-7 ° C.) 50 mass Part, FA-731A (acrylic monomer manufactured by Hitachi Chemical Co., Ltd.) 25 parts by weight, I-907 (trade name, radical polymerization photoinitiator manufactured by Ciba Specialty Chemicals Co., Ltd.) 2 parts by weight To the mixture, methyl ethyl ketone was added and mixed with stirring, followed by vacuum degassing.

Next, this varnish was applied onto a polyethylene terephthalate film (Teijin DuPont Film A31) having a thickness of 50 μm, which had been peeled off, as a carrier film. Then, it heated at 80 degreeC for 10 minutes, and then 120 degreeC for 20 minutes, and produced the 20-micrometer-thick adhesive layer. And an ultraviolet ray irradiation machine (Toyo Adtec Co., Ltd. product name, MTUV-1236) was used to irradiate the adhesive layer with ultraviolet rays of 100 mJ / cm ² from the carrier film side, and a silicon rubber roll was used at a temperature of 40 ° C. and a pressure. A base film (trade name, TM-005, manufactured by Toyobo Co., Ltd.) was bonded to the side opposite to the carrier film under the conditions of 0.2 MPa and a speed of 3 m / min.

  In the sample of Example 1, the tack strength FA on one side of the adhesive layer is 1047 gf, the tack strength FB on the other side is 110 gf, and 90 ° C. at 25 ° C. between the base film and one side of the adhesive layer. The peel strength was 0.06 N / 25 mm.

  In preparing the sample of Example 2, first, HP-7200H (trade name, manufactured by Dainippon Ink Chemical Co., Ltd., dicyclopentadiene type epoxy resin, epoxy equivalent 280), 20 parts by mass, Plyofen LF4871 (Dainippon Ink Chemical Co., Ltd.) Industrial Co., Ltd. trade name, bisphenol A novolak resin) 7 parts by mass, HTR-860P-3 (Teikoku Chemical Industry Co., Ltd. trade name, epoxy group-containing acrylic rubber, molecular weight 1 million, Tg-7 ° C.) 50 mass Part, FA-731A (acrylic monomer manufactured by Hitachi Chemical Co., Ltd.) 25 parts by weight, I-907 (trade name, radical polymerization photoinitiator manufactured by Ciba Specialty Chemicals Co., Ltd.) 2 parts by weight To the mixture, methyl ethyl ketone was added and mixed with stirring, followed by vacuum degassing.

Next, this varnish was applied onto a polyethylene terephthalate film (Teijin DuPont Film A31) having a thickness of 50 μm, which had been peeled off, as a carrier film. Then, it heated at 80 degreeC for 10 minutes, and then 120 degreeC for 20 minutes, and produced the 20-micrometer-thick adhesive layer. And an ultraviolet ray irradiation machine (Toyo Adtec Co., Ltd. product name, MTUV-1236) was used to irradiate the adhesive layer with ultraviolet rays of 100 mJ / cm ² from the carrier film side, and a silicon rubber roll was used at a temperature of 40 ° C. and a pressure. A base film (trade name, TM-005, manufactured by Toyobo Co., Ltd.) was bonded to the side opposite to the carrier film under the conditions of 0.2 MPa and a speed of 3 m / min.

  In the sample of Example 2, the tack strength FA on one side of the adhesive layer was 1113 gf, the tack strength FB on the other side was 454 gf, and the 90 ° C. at 25 ° C. between the base film and one side of the adhesive layer. The peel strength was 0.08 N / 25 mm.

  In preparing the sample of Example 3, first, HP-7200H (trade name, manufactured by Dainippon Ink Chemical Co., Ltd., dicyclopentadiene type epoxy resin, epoxy equivalent 280), 20 parts by mass of Plyofen LF4871 (Dainippon Ink Chemical Co., Ltd.) Kogyo Co., Ltd. trade name, bisphenol A novolac resin (4 parts by weight), Millex XLC-LL (Mitsui Chemicals, trade name, aralkyl type phenol resin), 3 parts by weight, HTR-860P-3 (Teikoku Sangyo ( Co., Ltd. trade name, epoxy group-containing acrylic rubber, molecular weight 1 million, Tg-7 ° C. 50 parts by mass, FA-731A (Hitachi Chemical Industry Co., Ltd. acrylic monomer) 12 parts by weight, FA-P240A (Hitachi Chemical Industries) Acrylic Monomer Co., Ltd.) 12 parts by weight, I-907 (trade name, manufactured by Ciba Specialty Chemicals Co., Ltd.) The radical polymerization type photoinitiator) composition comprising 2 parts by weight, followed by stirring and mixing by adding methyl ethyl ketone and vacuum degassed.

Next, this varnish was coated on a 50 μm-thick polyethylene terephthalate film (Teijin DuPont Film A31) that was a carrier film and had been subjected to a release treatment. Then, it heated at 80 degreeC for 10 minutes, and then 120 degreeC for 20 minutes, and produced the 20-micrometer-thick adhesive layer. Then, the adhesive film was irradiated with ultraviolet rays of 200 mJ / cm ² from the carrier film side using an ultraviolet irradiation machine (trade name, MTUV-1236 manufactured by Toyo Adtec Co., Ltd.), and a temperature of 40 ° C. and pressure was applied using a silicon rubber roll. A substrate film (trade name, TM-005, manufactured by Toyobo Co., Ltd.) was bonded to the side opposite to the carrier film under the conditions of 0.2 MPa and a speed of 3 m / min.

  In the sample of Example 3, the tack strength FA on one side of the adhesive layer was 1254 gf, the tack strength FB on the other side was 687 gf, and the 90 ° C. at 25 ° C. between the base film and one side of the adhesive layer. The peel strength was 0.08 N / 25 mm.

  In preparing the sample of Comparative Example 1, an adhesive layer was prepared in the same manner as in Example 1, and the silicon rubber roll was used on the side opposite to the carrier film at a temperature of 40 ° C., a pressure of 0.2 MPa, and a speed of 3 m / min. A base film (trade name, TM-005, manufactured by Toyobo Co., Ltd.) was bonded. In the sample of Comparative Example 1, the tack strength FA on one side of the adhesive layer is 1016 gf, the tack strength FB on the other side is 103 gf, and 90 ° C. at 25 ° C. between the base film and one side of the adhesive layer. The peel strength was 0.06 N / 25 mm.

  In preparing the sample of Comparative Example 2, an adhesive layer was prepared in the same manner as in Example 2, and the silicon rubber roll was used on the side opposite to the carrier film under the conditions of a temperature of 40 ° C., a pressure of 0.2 MPa, and a speed of 3 m / min. A base film (trade name, TM-005, manufactured by Toyobo Co., Ltd.) was bonded. In the sample of Comparative Example 2, the tack strength FA on one side of the adhesive layer was 1089 gf, the tack strength FB on the other side was 1102 gf, and the 90 ° C. at 25 ° C. between the base film and one side of the adhesive layer. The peel strength was 0.07 N / 25 mm.

  In preparing the sample of Comparative Example 3, an adhesive layer was prepared in the same manner as in Example 3, and the silicon rubber roll was used on the side opposite to the carrier film at a temperature of 40 ° C., a pressure of 0.2 MPa, and a speed of 3 m / min. A base film (trade name, TM-005, manufactured by Toyobo Co., Ltd.) was bonded. In the sample of Comparative Example 3, the tack strength FA on one side of the adhesive layer was 1332 gf, the tack strength FB on the other side was 1227 gf, and 90 ° C. at 25 ° C. between the base film and one side of the adhesive layer. The peel strength was 0.08 N / 25 mm.

The tack strengths FA and FB were measured using a tacking tester (Tacking Tester manufactured by Reska Co., Ltd.), with the carrier film and the base film peeled, and a pushing speed of 2 mm / sec and a lifting speed of 10 mm. The tack strength of both surfaces of the adhesive layer with respect to 5.1 mmφ SUS304 was determined under the conditions of / sec, stop load 100 gf / cm ² , stop time 1 second, and temperature 30 ° C.

In measuring the peel strength, each adhesive film sample was irradiated with 200 mJ / cm ² of ultraviolet rays from the base film side using an ultraviolet irradiator (QRE-4013-A-00 manufactured by Oak Manufacturing Co., Ltd.). After irradiating and peeling off the carrier film, the peeled surface was attached to a glass plate with a double-sided tape, and the 90 ° peel strength at 25 ° C. was measured at a pulling speed of 50 m / min.

  FIG. 8 is a diagram showing the results of the effect confirmation test. Regarding the anti-transfer effect, the carrier film was peeled off from the samples of each Example and each Comparative Example, and the peeled surface was attached to a dicing frame (DTF 2-8-1, manufactured by DISCO Corporation) and kept at room temperature for about 1 hour. After being stored, the substrate film was peeled off from the dicing frame. The case where the adhesive layer did not remain on the dicing frame was determined to be OK, and the case where the adhesive layer remained was determined to be NG. As a result, as shown in FIG. 8, in Examples 1 to 3, no adhesive layer remained on the dicing frame, whereas in Comparative Examples 1 to 3, the adhesive layer remained on the dicing frame. Was confirmed.

  Further, regarding the presence / absence of peeling and voids in the semiconductor device, a 50 μm thick semiconductor wafer was laminated at 60 ° C. or 80 ° C. on the samples of each example and each comparative example, and a full auto dicer DFD- manufactured by DISCO Corporation. Dicing was performed using 6361. This cutting was performed by a single cut method in which processing was completed with one blade. As a blade, a dicing blade NBC-ZH104F-SE27HDBB manufactured by Disco Corporation was used, and dicing was performed under conditions of a blade rotation speed of 45,000 rpm and a cutting speed of 50 mm / s. The blade height was set to cut about 90 μm (90 μm) with respect to the base film. The size for cutting the semiconductor wafer was 7.5 × 7.5 mm. Thereafter, the adhesive film was completely cut with an expand to produce a semiconductor element with an adhesive layer.

  Next, using the flexible die bonder DB-730 manufactured by Renesas East Japan Semiconductor, the produced semiconductor element with an adhesive layer was pressure-bonded to a wiring-supported support member on which another semiconductor element had already been laminated in the first stage. The hot plate surface temperature at the time of pressure bonding was set to 120 ° C., and heat treatment was further performed on a hot plate at 150 ° C. for 1 hour or 2 hours. Then, Hitachi Chemical Co., Ltd. sealing material CEL-9750ZHF was shape | molded on the support member with a wiring, the hardening process was performed at 175 degreeC for 5 hours, and the semiconductor device was obtained.

  Thereafter, the presence or absence of peeling / void inside the semiconductor device was observed with an ultrasonic exploration imaging apparatus, and dried at 125 ° C. for 12 hours. In addition, after the dried semiconductor device was subjected to a JEDEC level 2 (85 ° C., 60% RH, 168 hours) moisture absorption treatment, the maximum temperature was set to 265 ° C. and 30 seconds, and three reflows were performed. Processing was done. Then, the semiconductor device after the reflow treatment was observed again with an ultrasonic exploration imaging device, and the change in peeling and void before and after the treatment was observed. Twelve semiconductor devices were observed before and after the reflow treatment, and the samples in which no peeling / voids were observed in all samples were good, and the samples in which peeling / voids were observed in one sample were regarded as bad. As a result, as shown in FIG. 8, peeling and voids were not observed in all samples of Examples 1 to 3 and Comparative Examples 1 to 3.

  DESCRIPTION OF SYMBOLS 1 ... Adhesive film, 11 ... Base film, 12 ... Carrier film, 13 ... Adhesive layer, 13A ... One side, 13B ... Other side, 16 ... High tack surface, 17 ... Low tack surface, 21 ... Semiconductor Wafer, 22 ... dicing frame, 24 ... semiconductor element with adhesive layer, 27 ... support member (adhered body), 30 ... semiconductor device.

Claims (5)

A base film;
A single composition adhesive layer formed on one side of the base film, and
In the adhesive layer, when the tack strength at 30 ° C. of one surface facing the base film side is FA and the tack strength at 30 ° C. of the other surface attached to the dicing frame is FB, FA> FB and An adhesive film satisfying 10 gf ≦ FB ≦ 800 gf.   2. The adhesive film according to claim 1, wherein the tack strength is a tack strength with respect to a surface made of SUS304 having a diameter of 5.1 mm.   The adhesive film according to claim 1 or 2, wherein a 90 ° peel strength at 25 ° C between the base film and the one surface of the adhesive layer is 40 N / m or more.   The adhesive layer is formed by irradiating radiation from one side after applying and drying a varnish containing a predetermined resin composition on a carrier film. The adhesive film according to any one of the above. The dicing step of dicing the semiconductor wafer by bonding the other side of the adhesive film according to any one of claims 1 to 4 to a dicing frame and a semiconductor wafer, and the adhesive obtained in the dicing step A pickup step of picking up the semiconductor element with a layer and fixing it to the adherend;
And a film peeling step for peeling the adhesive film from the dicing frame after the pick-up step.

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