JP6144510B2 - Manufacturing method of semiconductor device - Google Patents

Description

The present invention relates to a method of manufacturing a semiconductor equipment, and in particular relates to a semiconductor equipment manufacturing how having a reverse conducting insulated gate bipolar transistor.

  In recent years, from the viewpoint of energy saving, inverter circuits have been widely used for controlling home appliances and industrial power devices. In the inverter circuit, power is controlled by repeatedly turning on or off the voltage or current by the power semiconductor device. At a voltage of a rated voltage of 300 V or higher, an insulated gate bipolar transistor (hereinafter referred to as “IGBT”) is mainly used as a switching element because of its characteristics.

  Inverter circuits are often used mainly to drive inductive loads such as induction motors. In that case, since the back electromotive force is generated from the inductive load, a free wheel diode is required to recirculate the current generated from the back electromotive force. A normal inverter circuit is composed of an IGBT and a freewheeling diode connected in parallel, but with the aim of reducing the size and weight of the inverter device, the IGBT and the freewheeling diode are formed on the same substrate to form a single chip. A reverse conducting insulated gate bipolar transistor (hereinafter referred to as “reverse conducting IGBT”) has been developed and put into practical use. Note that Patent Documents 1 to 4 are examples of patent documents disclosing semiconductor devices in this technical field.

JP 2009-010414 A International Publication No. WO2007 / 055352 Japanese Patent Application Laid-Open No. 10-074959 JP 2012-023327 A

  In the reverse conducting IGBT, the base region of the IGBT is the anode region of the free-wheeling diode. The impurity concentration of the anode region of the reverse conducting IGBT is higher than the impurity concentration of the anode region of the conventional freewheeling diode, and the depth (diffusion depth) of the anode region is also deep. For this reason, when the reverse conducting IGBT performs a recovery operation, the recovery current becomes larger than that of the conventional freewheeling diode. In order to suppress the recovery current, in the reverse conducting IGBT, it is necessary to control the lifetime by irradiating an electron beam or the like.

  However, in the reverse conduction type IGBT, the IGBT and the free wheel diode are formed on the same substrate and formed into one chip. Therefore, when the electron beam is irradiated, not only the free wheel diode but also the characteristics of the IGBT change. There was a problem.

The present invention has been made to solve the above problems, the purpose of that, without affecting the characteristics of the IGBT, the semiconductor equipment manufacturing method capable of controlling the recovery current of a freewheeling diode Is to provide.

A manufacturing method of a semiconductor device according to the present invention includes the following steps. A first conductivity type semiconductor substrate having a first main surface and a second main surface facing each other is prepared. A first region and a second region adjacent to each other are defined in the semiconductor substrate, a base region is formed on the second main surface side in the first region, and an anode region is formed on the first main surface side in the second region. An emitter region is formed on the second main surface side in the first region. In the first region, a channel is formed in the base region, thereby forming a gate electrode portion that electrically connects the emitter region and the portion of the first conductivity type region in the semiconductor substrate. A collector region is formed on the second main surface side in the first region. The second region is irradiated with hydrogen (H +) in a manner excluding the first region. The step of irradiating with hydrogen (H +) includes a step of forming a cathode region having crystal defects by converting a portion of the semiconductor substrate into a donor. A step of forming an impurity region of the second conductivity type on the second main surface side of each of the first region and the second region is provided. In the step of forming the collector region, a portion of the impurity region located in the first region is formed as the collector region. In the step of irradiating with hydrogen (H +), a cathode region is formed by irradiating a portion located in the second region of the impurity region with a predetermined dose amount that reverses the second conductivity type.

  According to the semiconductor device manufacturing method of the present invention, it is possible to manufacture a semiconductor device that can control the recovery current of the freewheeling diode without affecting the electrical characteristics of the insulated gate bipolar transistor.

It is a figure which shows the inverter circuit of the inverter apparatus with which the semiconductor device provided with reverse conduction type IGBT which concerns on Embodiment 1 of this invention is applied. In the same embodiment, it is sectional drawing which shows typically the structure of the semiconductor device provided with reverse conduction type IGBT. In the same embodiment, it is a top view showing an example of a plane pattern of a semiconductor device provided with reverse conduction type IGBT. FIG. 4 is a cross-sectional view taken along a cross-sectional line IV-IV shown in FIG. 3 in the same embodiment. FIG. 6 is a first cross-sectional view for describing an operation of a semiconductor device including a reverse conducting IGBT in the same embodiment. FIG. 10 is a second cross-sectional view for explaining the operation of the semiconductor device including the reverse conducting IGBT in the embodiment. 4 is a graph for explaining a recovery operation of a freewheeling diode in the same embodiment. It is sectional drawing which shows the structure of the semiconductor device provided with reverse conduction type IGBT which concerns on a comparative example. It is sectional drawing which shows 1 process of the manufacturing method of the semiconductor device provided with reverse conduction type IGBT based on Embodiment 2 of this invention. FIG. 10 is a cross-sectional view showing a step performed after the step shown in FIG. 9 in the same embodiment. FIG. 11 is a cross-sectional view showing a step performed after the step shown in FIG. 10 in the same embodiment. FIG. 12 is a cross-sectional view showing a step performed after the step shown in FIG. 11 in the same embodiment. FIG. 13 is a cross-sectional view showing a step performed after the step shown in FIG. 12 in the same embodiment. FIG. 14 is a cross-sectional view showing a step performed after the step shown in FIG. 13 in the same embodiment. FIG. 15 is a cross-sectional view showing a step performed after the step shown in FIG. 14 in the same embodiment. FIG. 16 is a cross-sectional view showing a step performed after the step shown in FIG. 15 in the same embodiment. FIG. 17 is a cross-sectional view showing a step performed after the step shown in FIG. 16 in the same embodiment. FIG. 18 is a cross-sectional view showing a step performed after the step shown in FIG. 17 in the same embodiment. FIG. 19 is a cross-sectional view showing a step performed after the step shown in FIG. 18 in the same embodiment. FIG. 20 is a cross-sectional view showing a step performed after the step shown in FIG. 19 in the same embodiment.

  First, an inverter circuit of an inverter device for controlling an inductive load to which a semiconductor device is applied is shown in FIG. As shown in FIG. 1, the inverter device includes an IGBT 21 that supplies electric power to an inductive load 32 such as an induction motor, and a return diode 22 as a return current path from the inductive load 32. The IGBT 21 and the reflux diode 22 are connected in parallel. As shown in FIG. 2, the semiconductor device is a reverse conducting IGBT 20 that is formed into one chip by forming the IGBT 21 and the free wheel diode 22 on the same semiconductor substrate 1.

  In the semiconductor substrate 1, the IGBT formation region 15 and the free wheel diode formation region 16 are defined so as to be adjacent to each other. In the IGBT formation region 15 on one main surface of the semiconductor substrate 1, an emitter electrode 8a is formed, and in the reflux diode formation region 16, an anode electrode 8b is formed. The emitter electrode 8a and the anode electrode 8b are formed from the same conductive film. In the IGBT forming region 15 on the other main surface of the semiconductor substrate 1, a collector electrode 11 a is formed, and in the reflux diode forming region 16, a cathode electrode 11 b is formed. The collector electrode 11a and the cathode electrode 11b are formed from the same conductive film.

  Hereinafter, a structure of a semiconductor device provided with the reverse conducting IGBT 20 and a manufacturing method thereof will be specifically described.

Embodiment 1
In Embodiment 1, a structure of a semiconductor device including a reverse conducting IGBT will be described. As shown in FIGS. 3 and 4, in the semiconductor substrate 1, the IGBT formation region 15 and the free wheel diode formation region 16 are defined so as to be adjacent to each other. In the IGBT formation region 15 in the N ⁻ type semiconductor substrate 1, the p base region 2 a is formed from one surface (one main surface of the semiconductor substrate 1) to a predetermined depth. N ⁺ -type emitter region 3 is formed from the surface of p base region 2a to a region shallower than p base region 2a.

A trench 4 reaching the N ⁻ type region of the semiconductor substrate 1 from the surface of the emitter region 3 through the emitter region 3 and the p base region 2 a is formed. A trench gate electrode 6 is formed in the trench 4 with a gate oxide film 5 interposed therebetween. An insulating film 7 is formed so as to cover the trench gate electrode 6. Further, an emitter electrode 8 a is formed so as to cover the insulating film 7.

A p collector region 9a is formed from the other surface (the other main surface of the semiconductor substrate 1) in the IGBT formation region 15 to a predetermined depth. A collector electrode 11a is formed in contact with the p collector region 9a. In FIG. 4, the insulating film 7 is formed so as to cover the emitter region 3, but the emitter electrode 8 a is formed so as to be electrically connected to the emitter region 3 in a region not shown.

On the other hand, in the free-wheeling diode formation region 16 in the N ⁻ type semiconductor substrate 1, the anode region 2b is formed from one surface (one main surface of the semiconductor substrate 1) to a predetermined depth. An anode electrode 8b is formed on the anode region 2b so as to be in contact with the anode region 2b. An N ⁺ -type cathode region 10 is formed from the other surface (the other main surface of the semiconductor substrate 1) in the free-wheeling diode formation region 16 to a predetermined depth. A cathode electrode 11 b is formed so as to be in contact with the cathode region 10. The emitter electrode 8a and the anode electrode 8b are formed from the same conductive film. The collector electrode 11a and the cathode electrode 11b are also formed from the same conductive film.

Further, in the reverse conducting IGBT 20, crystal defects are formed in the free-wheeling diode formation region 16 in a form excluding the IGBT formation region 15. That is, crystal defects are formed in the cathode region 10. Further, a crystal defect is formed as a local lifetime control region 12 in a portion of the N ⁻ type region of the semiconductor substrate 1 located in the vicinity of the boundary between the anode region 2 b and the N ⁻ type region in the semiconductor substrate 1. . As will be described later, the cathode region 10 irradiates hydrogen (H +) from the other surface of the semiconductor substrate 1 in a state where the IGBT formation region 15 is shielded by a metal mask, thereby converting the N ⁻ type semiconductor substrate 1 into a donor. Formed by.

  In the reverse conducting IGBT 20 described above, the same structure as that of the trench 4, the gate oxide film 5, and the trench gate electrode 6 formed in the IGBT formation region 15 is also formed in the free wheel diode formation region 16. Such a structure may not be formed. Moreover, the plane pattern shown in FIG. 3 is an example, and the present invention is not limited to this.

Next, as an operation of the above-described reverse conducting IGBT 20, an on operation of the IGBT 21 will be described first. In a state where a predetermined positive collector voltage _VCE is applied between the emitter electrode 8a and the collector electrode 11a, a predetermined threshold value is set as a gate voltage _VGE between the emitter electrode 8a and the trench gate electrode 6. By applying a voltage higher than the voltage, the trench gate electrode 6 is turned on.

At this time, as shown in FIG. 5, in the portion of the P base region 2a located in the vicinity of the trench gate electrode 6, the conductivity type is inverted from the p type to the n type to form a channel, and the emitter electrode 8a is formed through this channel. from, N in the semiconductor substrate 1 ^- -type region ^- the (N type semiconductor layer), an electron 42 is injected. The injected electrons place a forward bias between the p collector region 9 a and the N ⁻ type semiconductor substrate 1 region, and holes are transferred from the p collector region 9 a to the N ⁻ type region in the semiconductor substrate 1. 41 is implanted, and the resistance value of the N ⁻ type region in the semiconductor substrate 1 is greatly reduced. Thereby, the on-resistance of the IGBT 21 is greatly reduced, the current capacity is increased, and the IGBT 21 is turned on.

Next, an operation when the IGBT 21 is turned off from the on state to the off state will be described. By applying 0 V or a negative voltage (reverse bias) as the gate voltage V _GE , the channel formed in the p base region 2 a disappears, and an N ⁻ type region (N ⁻ type semiconductor in the semiconductor substrate 1). The injection of electrons into the layer stops. Thereafter, electrons and holes (holes) accumulated in the N ⁻ type region of the semiconductor substrate 1 flow toward the collector electrode 11a and the emitter electrode 8, respectively, or the electrons and holes are recombined. Disappears, and the IGBT 21 is finally turned off.

Next, the ON operation of the free wheel diode 22 will be described. By applying a forward bias voltage (anode voltage V _AK ) exceeding a predetermined threshold voltage between the anode electrode 8b and the cathode electrode 11b, as shown in FIG. 6, from the anode region 2b to the semiconductor substrate 1 Holes 41 are injected into the N ⁻ -type region, while electrons 42 are injected from the cathode region 10, the forward voltage (V _F ) is greatly reduced, current flows, and the device is turned on.

Next, a change in current (recovery operation) when the free wheeling diode is changed from the on state to the off state will be described. FIG. 7 is a graph showing a current change (recovery operation) when the free wheeling diode is changed from the on state to the off state. As shown in FIG. 7, when a reverse voltage (reverse bias voltage) is applied from a state in which a forward current (I _F ) flows through the freewheeling diode, the reverse direction is reversed in a certain period (T _RR ). Current flows through

The current flowing in the reverse direction is called a recovery current, and the peak value is expressed as _IRR . Since this recovery current is a loss for the freewheeling diode, it is necessary to suppress the recovery current in order to reduce the loss. The recovery current controls the lifetime of the region where the freewheeling diode is formed, thereby promoting recombination of electrons and holes and suppressing loss.

  In the reverse conducting IGBT 20 described above, the loss of the free wheel diode can be suppressed without affecting the operation of the IGBT 21 because the crystal defect 51 is formed in the free wheel diode forming region 16. This will be described in relation to the reverse conducting IGBT according to the comparative example.

As shown in FIG. 8, in the reverse conducting IGBT 120 according to the comparative example, in the IGBT forming region 115 in the N ⁻ type semiconductor substrate 101, a p base region 102a is formed from one surface to a predetermined depth, and the p An N ⁺ -type emitter region 103 is formed from the surface of the base region 102a to a region shallower than the p base region 102a. A trench 104 is formed from the surface of the emitter region 103 to reach the N ⁻ type region of the semiconductor substrate 101 through the emitter region 103 and the p base region 102a.

  A trench gate electrode 105 is formed in the trench 104 with a gate oxide film 105 interposed therebetween. An insulating film 107 is formed so as to cover the trench gate electrode 105, and an emitter electrode 108 a is further formed so as to cover the insulating film 107. A p collector region 109 is formed from the other surface of IGBT formation region 115 to a predetermined depth, and collector electrode 111 a is formed so as to be in contact with p collector region 109.

On the other hand, in the free-wheeling diode formation region 116 in the N ⁻ type semiconductor substrate 101, an anode region 102b is formed from one surface to a predetermined depth, and an anode electrode 108b is formed so as to be in contact with the anode region 102b. . An N ⁺ -type cathode region 110 is formed from the other surface of the free-wheeling diode formation region 16 to a predetermined depth, and a cathode electrode 111 b is formed so as to be in contact with the cathode region 110.

In the reverse conducting IGBT 120 according to the comparative example, in order to reduce the loss of the freewheeling diode, the freewheeling diode forming region 116 is irradiated with an electron beam, and the cathode region 110, the N ⁻ type region and the anode region 102 b in the semiconductor substrate 101. By forming the crystal defect 151 in each of these, the lifetime of the free wheel diode is controlled.

However, in the reverse conducting IGBT 120 according to the comparative example, the electron beam is irradiated on the IGBT forming region 115 together with the free wheel diode forming region 116 from the viewpoint of manufacturing cost. For this reason, crystal defects 151 are formed in the p collector region 109, the N ⁻ type region in the semiconductor substrate 101, the p base region 102a, and the like.

  As a result, in the IGBT of the comparative example, the carrier lifetime is shortened and the on-voltage of the IGBT is increased to increase the conduction loss, while the turn-off loss at the time of turn-off is reduced. Since the characteristics (balance) of the conduction loss and the turn-off loss differ depending on the application to which the semiconductor device is applied, it is not preferable that the characteristics of the conduction loss and the turn-off loss of the IGBT vary.

  In the reverse conducting IGBT 20 according to the embodiment with respect to the comparative example, the reflux diode forming region 16 is irradiated with hydrogen (H +) in a state in which the IGBT forming region 15 is apologized. As a result, no crystal defects are formed in the IGBT formation region 15, and the N + type cathode region 10 and the local lifetime control region 12 having crystal defects are formed in the free-wheeling diode formation region 16. For this reason, crystal defects are not formed in the path of electrons and holes that flow when the IGBT 21 is turned on, and the on operation of the IGBT 21 is not affected. As a result, the recovery current of the freewheeling diode can be controlled without affecting the electrical characteristics of the IGBT.

In this case, as will be described later, by irradiating with hydrogen (H +), the N ⁻ type semiconductor substrate 1 is converted into a donor to form the N ⁺ type cathode region 10, and the local lifetime control region 12. By forming the film using the same stainless steel mask, the production cost can be reduced.

Further, in the IGBT 21 in the reverse conducting IGBT 20 according to the embodiment, electrons and holes are injected by forming the p collector region 9a immediately below the N ⁺ -type emitter region 3 and the trench gate electrode 6 and the like. The route that is used can be minimized, and an increase in on-resistance can be prevented. Further, in the free-wheeling diode 22, by forming the N ⁺ -type cathode region 10 immediately below the anode region 2b, the path through which electrons and holes (holes) are injected can be minimized, and the forward voltage ( An increase in V _F ) can be prevented.

Embodiment 2
In the second embodiment, a method for manufacturing the reverse conducting IGBT described in the first embodiment will be described.

First, as shown in FIG. 9, an N ⁻ type semiconductor substrate 1 is prepared. Next, as shown in FIG. 10, for example, boron (B) is implanted into one main surface of the semiconductor substrate 1 under a predetermined implantation condition, whereby the p base region 2 a is formed in the IGBT formation region 15. In the free-wheeling diode formation region 16, the anode region 2b is formed. Thus, in this step, the p base region 2a and the anode region 2b are formed simultaneously.

Next, a predetermined photolithography process is performed to form a resist pattern (not shown) for forming the emitter region. Next, using the resist pattern as a mask, for example, phosphorus (P) or arsenic (As) is implanted to selectively form the N ⁺ -type emitter region 3 in the IGBT formation region 15 as shown in FIG. Formed.

Next, a resist pattern (not shown) for forming a trench is formed by performing a predetermined photolithography process. Next, by performing an etching process using the resist pattern as a mask, as shown in FIG. 12, the N ⁻ type semiconductor substrate 1 in the N ⁻ type semiconductor substrate 1 passes through the N ⁺ type emitter region 3 and the base region 2a. A trench 4 reaching this region is formed. At this time, the trench 4 is formed in both the IGBT formation region 15 and the free wheel diode formation region 16. The widths of the trenches 4 are all the same.

  Next, for example, by performing a thermal oxidation process, a silicon oxide film (not shown) to be a gate oxide film is formed on the sidewall surface of the trench. Next, for example, a polysilicon film (not shown) to be a gate electrode is formed so as to cover the silicon oxide film. Next, the silicon oxide film and the polysilicon film located on the surface of the semiconductor substrate 1 are removed, leaving the silicon oxide film and the polysilicon film located in the trench. Thus, as shown in FIG. 13, trench gate electrode 6 is formed on the side wall surface of trench 4 with gate oxide film 5 interposed. Thereafter, an insulating film 7 covering the trench gate electrode 6 is formed. The trench gate electrode 6 is electrically connected to an emitter electrode described later.

Next, by forming an aluminum silicon (Al—Si) film so as to cover the insulating film 7 and the like by, for example, sputtering, the emitter electrode 8a is formed in the IGBT formation region 15 as shown in FIG. Then, the anode 8b is formed in the reflux diode forming region 16. Thus, in this step, the emitter electrode 8a and the anode electrode 8b are formed simultaneously. Next, as shown in FIG. 15, the other main surface is polished until the thickness of the N ⁻ type semiconductor substrate 1 reaches a predetermined thickness.

Next, for example, boron (B) is implanted into the entire surface of the other main surface of N ⁻ type semiconductor substrate 1 to form p type region 9 as shown in FIG. Next, as shown in FIG. 17, the stainless steel mask 13 is used and the stainless steel mask 13 is arranged so as to shield the IGBT formation region 15, and in this state, hydrogen (H +) 14 is transferred to the other side of the semiconductor substrate 1. The main surface is irradiated. At this time, the acceleration voltage is adjusted so that the irradiated hydrogen (H +) 14 remains in the p-type region 9. Further, the dose of hydrogen (H +) 14 is adjusted so that the p-type region 9 is inverted to the n-type.

As a result, as shown in FIG. 18, in the free-wheeling diode formation region 16, the p-type region formed on the other main surface is turned into a donor and inverted to an n-type, and an N ⁺ -type cathode including a crystal defect 51. Region 10 is formed. On the other hand, in the IGBT formation region 15 that is not irradiated with hydrogen (H +) 14, the remaining p-type region 9 becomes the p collector region 9a.

Next, the other main surface of the semiconductor substrate 1 is irradiated with hydrogen (H +) 14 as shown in FIG. 19 while the stainless steel mask 13 is disposed so as to shield the IGBT forming region 15. At this time, hydrogen (H +) 14 is to be irradiated, N ^- in the mold region, p anode region 2b and the N ^{- -} type N semiconductor substrate 1 so as to be irradiated to the vicinity of the boundary portion between the type of region In addition, the acceleration voltage is adjusted. Thereby, the local lifetime control region 12 including the crystal defect 51 is formed.

Next, for example, by forming an aluminum silicon film so as to cover the p collector region 9a and the N ⁺ -type cathode region 10 by sputtering or the like, as shown in FIG. 11 a is formed, and the cathode electrode 11 b is formed in the reflux diode forming region 16. Thus, in this step, the collector electrode 11a and the cathode electrode 11b are formed at the same time, and the main part of the reverse conducting IGBT is completed.

In the above-described reverse-conduction-type IGBT manufacturing method, the p-type region 9 is formed on the entire other main surface of the N ⁻ -type semiconductor substrate 1 and selectively formed in the free-wheeling diode forming region 16 using the stainless steel mask 13. Hydrogen (H +) is irradiated. As a result, the conductivity type of the irradiated p-type region 9 is inverted to n-type to form an N ⁺ -type cathode region 10, while the non-irradiated p-type region 9 becomes a p collector region 9 a. As a result, the implantation mask can be reduced as compared with the case where the N ⁺ -type cathode region 10 and the p collector region 9a are individually formed by the implantation method. In addition, the influence on the electrical characteristics of the reflux diode 22 and the IGBT 21 can be minimized with respect to the positional deviation of the stainless steel mask 13 when forming the N ⁺ -type cathode region. Thus, in the method for manufacturing the semiconductor device described above, the recovery current of the free wheel diode 22 can be controlled without affecting the electrical characteristics of the IGBT 21.

  The embodiment disclosed this time is an example, and the present invention is not limited to this. The present invention is defined by the terms of the claims, rather than the scope described above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

  The present invention is effectively used for a semiconductor device in which an IGBT and a free-wheeling diode are formed on the same substrate.

  1 semiconductor substrate, 2a p base region, 2b anode region, 3 emitter region, 4 trench, 5 trench gate electrode, 6 gate oxide film, 7 insulating film, 8a emitter electrode, 8b anode electrode, 9 p-type region, 9a p collector Region, 10 cathode region, 11a collector electrode, 11b cathode electrode, 12 local lifetime control region, 13 stainless steel mask, 14 hydrogen (H +), 15 IGBT formation region, 16 free-wheeling diode formation region, 20 reverse conducting IGBT, 21 IGBT, 22 freewheeling diode, 31 inverter circuit, 32 inductive load, 41 holes, 42 electrons, 51 crystal defects.

Claims (3)

Providing a first conductivity type semiconductor substrate having a first main surface and a second main surface facing each other;
A first region and a second region adjacent to each other are defined in the semiconductor substrate, a base region is formed on the second main surface side in the first region, and an anode region is formed on the first main surface side in the second region Forming a step;
Forming an emitter region on the second main surface side in the first region;
Forming a gate electrode portion that electrically connects the emitter region and a portion of the first conductivity type region in the semiconductor substrate by forming a channel in the base region in the first region;
Forming a collector region on the second main surface side in the first region;
Irradiating the second region with hydrogen (H +) in a manner excluding the first region,
The step of irradiating with hydrogen (H +) includes a step of forming a cathode region having a crystal defect by converting a portion of the semiconductor substrate into a donor.
Forming a second conductivity type impurity region on the second main surface side of each of the first region and the second region;
In the step of forming the collector region, a portion of the impurity region located in the first region is formed as the collector region,
In the step of irradiating with hydrogen (H +), the cathode region is formed by irradiating a portion of the impurity region located in the second region with a predetermined dose amount that inverts the second conductivity type. A method for manufacturing a semiconductor device. Irradiating the hydrogen (H +) is located between said cathode region and said anode region, a portion of the first conductivity type region in the semiconductor substrate, comprising forming the crystal defects, A method for manufacturing a semiconductor device according to claim 1 . Step, said first region is irradiated in a state covered with a metal mask, a method of manufacturing a semiconductor device according to claim 1 or 2 which irradiates the hydrogen (H +).

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