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JP6042956B1 - Method for manufacturing soldered products - Google Patents

Method for manufacturing soldered products Download PDF

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Publication number
JP6042956B1
JP6042956B1 JP2015195198A JP2015195198A JP6042956B1 JP 6042956 B1 JP6042956 B1 JP 6042956B1 JP 2015195198 A JP2015195198 A JP 2015195198A JP 2015195198 A JP2015195198 A JP 2015195198A JP 6042956 B1 JP6042956 B1 JP 6042956B1
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JP
Japan
Prior art keywords
solder
soldering
temperature
temporary fixing
fixing agent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2015195198A
Other languages
Japanese (ja)
Other versions
JP2017069459A (en
Inventor
佑希子 林
佑希子 林
有沙 白石
有沙 白石
直人 小澤
直人 小澤
鈴木　隆之
隆之 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Origin Electric Co Ltd
Original Assignee
Origin Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Origin Electric Co Ltd filed Critical Origin Electric Co Ltd
Priority to JP2015195198A priority Critical patent/JP6042956B1/en
Priority to PCT/JP2016/078959 priority patent/WO2017057649A1/en
Priority to CN201680052916.9A priority patent/CN108141965B/en
Priority to EP16851820.7A priority patent/EP3358918B1/en
Priority to US15/764,268 priority patent/US10843300B2/en
Priority to TW105131585A priority patent/TWI653116B/en
Application granted granted Critical
Publication of JP6042956B1 publication Critical patent/JP6042956B1/en
Publication of JP2017069459A publication Critical patent/JP2017069459A/en
Active legal-status Critical Current
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K37/00—Auxiliary devices or processes, not specially adapted for a procedure covered by only one of the other main groups of this subclass
    • B23K37/04—Auxiliary devices or processes, not specially adapted for a procedure covered by only one of the other main groups of this subclass for holding or positioning work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
    • B23K1/203—Fluxing, i.e. applying flux onto surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
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    • B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
    • B23K35/3612—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest with organic compounds as principal constituents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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    • B23K35/3613—Polymers, e.g. resins
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K35/38—Selection of media, e.g. special atmospheres for surrounding the working area
    • B23K35/383—Selection of media, e.g. special atmospheres for surrounding the working area mainly containing noble gases or nitrogen
    • H—ELECTRICITY
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
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    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K35/262—Sn as the principal constituent
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Abstract

【課題】治具を用いることなく半田付けを行う半田付け製品の製造方法を得ること。【解決手段】本願の半田付け製品の製造方法は、半田と、半田を仮止めする仮固定剤とを提供する提供工程と；仮固定剤で半田を半田付け対象物に仮止めする仮止工程と；半田を仮止めした半田付け対象物を、真空中に置くか、または、半田が溶融する温度よりも低い所定の温度に加熱して、仮固定剤を気化させ半田と半田付け対象物の間に間隙を生じさせる気化工程と；気化工程に並行して、またはその後に、半田が溶融する温度よりも低い所定の温度で、気化工程により残された半田と半田付け対象物を還元ガスで還元する還元工程と；還元工程の後に、半田付け対象物を半田が溶融する温度以上の所定の温度に加熱して半田を溶融する半田溶融工程を備える。【選択図】図１A method for manufacturing a soldered product in which soldering is performed without using a jig is provided. A method of manufacturing a soldered product of the present application includes a providing step of providing solder and a temporary fixing agent for temporarily fixing the solder; and a temporary fixing step of temporarily fixing the solder to the soldering object with the temporary fixing agent. And placing the soldering object temporarily fixed with solder in a vacuum or heating to a predetermined temperature lower than the temperature at which the solder melts to vaporize the temporary fixing agent and A vaporizing step that creates a gap therebetween; parallel to or after the vaporizing step, the solder remaining in the vaporizing step and the soldering object are reduced with a reducing gas at a predetermined temperature lower than the temperature at which the solder melts. A reduction step of reducing; and a solder melting step of melting the solder by heating the soldering object to a predetermined temperature equal to or higher than a temperature at which the solder melts after the reduction step. [Selection] Figure 1

Description

本発明は、半田付け製品の製造方法に関し、特に半田付け装置で半田付けを行う際に、治具を用いることなく半田付けを行う半田付け製品の製造方法に関する。   The present invention relates to a method for manufacturing a soldered product, and more particularly to a method for manufacturing a soldered product in which soldering is performed without using a jig when soldering is performed by a soldering apparatus.

半田接合には、通常、半田付け対象物と半田が所定の位置に留まり、位置ずれなく接合されるために、これらを固定するための治具（パレットともいう）が用いられる。
特許文献１には、半導体チップを絶縁回路基板上の所定の位置にずれなく搭載し良好に半田接合させるために用いられる半導体チップの位置決め治具が開示されている（特許文献１、段落０００１、０００６〜００１０）。 Usually, a solder (also referred to as a pallet) for fixing the soldering object and the solder stays in a predetermined position and is joined without misalignment.
Patent Document 1 discloses a semiconductor chip positioning jig used for mounting a semiconductor chip in a predetermined position on an insulated circuit board without deviation and soldering it well (Patent Document 1, paragraph 0001, 0006-0010).

しかし、このような治具は半田付け対象物の形状に合わせて、その形状ごとに用意しなければならない。さらに、装着や取り外しに時間と手間を要し作業者の負担となる。さらには、半田溶接のための熱が治具に奪われる、という問題を有する。   However, such a jig must be prepared for each shape according to the shape of the object to be soldered. Furthermore, it takes time and effort to attach and remove, which is a burden on the operator. Furthermore, there is a problem that heat for solder welding is taken away by the jig.

特開２０１３−６５６６２号公報JP 2013-65662 A

本発明は上述の課題に鑑み、治具を用いることなく半田付けを行う半田付け製品の製造方法を提供することを目的とする。   An object of this invention is to provide the manufacturing method of the soldering product which solders without using a jig | tool in view of the above-mentioned subject.

上記目的を達成するために、本発明の第１の態様に係る半田付け製品の製造方法は、半田と、前記半田を仮止めする仮固定剤とを提供する提供工程と；前記仮固定剤で前記半田を半田付け対象物に仮止めする仮止工程と；前記半田を仮止めした半田付け対象物を、真空中に置くか、または、前記半田が溶融する温度よりも低い所定の温度に加熱して、前記仮固定剤を気化させ前記半田と前記半田付け対象物の間に間隙を生じさせる気化工程と；前記気化工程に並行して、またはその後に、前記半田が溶融する温度よりも低い所定の温度で、前記気化工程により残された前記半田と前記半田付け対象物を還元ガスで還元する還元工程と；前記還元工程の後に、前記半田付け対象物を前記半田が溶融する温度以上の所定の温度に加熱して前記半田を溶融する半田溶融工程を備える。
半田とは、半田付けに利用される合金をいう。
「真空中」とは、大気より低い圧力（いわゆる減圧）の空間をいう。
一見滑らかで平坦に見える物質の表面も、原子、分子レベルでは無数の凹凸を有する。したがって、このように構成すると、仮固定剤の気化により、半田および半田付け対象物間に上記凹凸による間隙が生じる。本願発明はこの間隙に還元ガスを導入することにより、半田および半田付け対象物の還元を効果的に行うことができる。
さらに、真空とすることにより、仮固定剤の気化を促進させることができる。さらに、常圧時の沸点が還元時の温度よりも高い仮固定剤であっても使用することができる。このように、効率よく仮固定剤を気化させることができ、使用可能な溶剤の種類を増やすことができる。 In order to achieve the above object, a method for manufacturing a soldered product according to the first aspect of the present invention includes a providing step of providing solder and a temporary fixing agent for temporarily fixing the solder; A temporary fixing step of temporarily fixing the solder to an object to be soldered; the soldered object to which the solder is temporarily fixed is placed in a vacuum or heated to a predetermined temperature lower than a temperature at which the solder melts A vaporization step of vaporizing the temporary fixing agent to create a gap between the solder and the soldering object; in parallel with or after the vaporization step, lower than a temperature at which the solder melts A reduction step of reducing the solder left by the vaporization step and the soldering object with a reducing gas at a predetermined temperature; and after the reduction step, the soldering object has a temperature equal to or higher than a temperature at which the solder melts. The solder is heated to a predetermined temperature. Comprising a solder melting step of melting.
Solder refers to an alloy used for soldering.
“In a vacuum” refers to a space having a pressure lower than the atmosphere (so-called reduced pressure).
The surface of a material that appears to be smooth and flat also has numerous irregularities at the atomic and molecular level. Therefore, if comprised in this way, the space | gap by the said unevenness | corrugation will arise between solder and the soldering target object by vaporization of a temporary fixing agent. The present invention can effectively reduce the solder and the soldering object by introducing a reducing gas into the gap.
Furthermore, vaporization of the temporary fixing agent can be promoted by applying a vacuum. Furthermore, even a temporary fixing agent having a boiling point at normal pressure higher than the temperature at the time of reduction can be used. Thus, the temporary fixing agent can be efficiently vaporized, and the types of usable solvents can be increased.

本発明の第２の態様に係る半田付け製品の製造方法は、上記本発明の第１の態様に係る半田付け製品の製造方法において、前記気化工程前に、前記半田を仮止めした半田付け対象物を不活性ガス中に置く不活性ガス工程をさらに備える。
このように構成すると、半田および半田付け対象物が雰囲気中に存在する微量酸素やその他のガスによって酸化、腐食されるのを防ぐことができる。 The method for manufacturing a soldered product according to the second aspect of the present invention is the method for manufacturing a soldered product according to the first aspect of the present invention, wherein the solder is temporarily fixed before the vaporizing step. It further includes an inert gas step of placing the object in the inert gas.
If comprised in this way, it can prevent that a solder and the soldering target object are oxidized and corroded by trace amount oxygen and other gas which exist in atmosphere.

本発明の第３の態様に係る半田付け製品の製造方法は、上記本発明の第１の態様または第２の態様に係る半田付け製品の製造方法において、前記気化工程では、前記半田付け対象物が真空中にある状態で加熱して、前記仮固定剤を気化させる。
このように構成すると、仮固定剤の気化を促進させることができる。さらに、常圧時の沸点が還元時の温度よりも高い仮固定剤であっても使用することができる。このように、効率よく仮固定剤を気化させることができ、使用可能な溶剤の種類を増やすことができる。 The method for manufacturing a soldered product according to the third aspect of the present invention is the method for manufacturing a soldered product according to the first or second aspect of the present invention, wherein the soldering object is the vaporizing step. Is heated in a vacuum state to vaporize the temporary fixative.
If comprised in this way, vaporization of a temporary fixing agent can be accelerated | stimulated. Furthermore, even a temporary fixing agent having a boiling point at normal pressure higher than the temperature at the time of reduction can be used. Thus, the temporary fixing agent can be efficiently vaporized, and the types of usable solvents can be increased.

本発明の第４の態様に係る半田付け製品の製造方法は、上記本発明の第１の態様乃至第３の態様のいずれか１の態様に係る半田付け製品の製造方法において、前記還元工程では、前記半田付け対象物が真空中にある状態で、前記間隙に還元ガスを導入し、前記半田付け対象物を還元する。
このように構成すると、半田および半田付け対象物間等の間隙に還元ガスを浸入し易くすることができる。 The method for manufacturing a soldered product according to the fourth aspect of the present invention is the method for manufacturing a soldered product according to any one of the first to third aspects of the present invention, wherein the reduction step includes In a state where the soldering object is in a vacuum, a reducing gas is introduced into the gap to reduce the soldering object.
If comprised in this way, it can make it easy to enter reducing gas in gaps, such as between solder and a soldering object.

本発明の第５の態様に係る半田付け製品の製造方法は、上記本発明の第１の態様乃至第４の態様のいずれか１の態様に係る半田付け製品の製造方法において、前記半田溶融工程では、前記半田付け対象物が真空中にある状態で、前記半田付け対象物を半田が溶融する温度以上に加熱して前記半田を溶融し、前記溶融後、圧力を上げて、前記半田内部の空洞（ボイド）を圧縮して小さくする、または無くすために、前記真空を破壊する真空破壊工程と；前記真空破壊工程の後に、前記半田付け対象物を冷却する冷却工程をさらに備える。
このように構成すると、真空破壊工程において半田が溶融している状態で空洞（ボイド）を潰すことができ、空洞を潰した後に半田を固化させることができるため、半田中のボイドによる疲労寿命の低下を抑制することができる。 A method for manufacturing a soldered product according to a fifth aspect of the present invention is the method for manufacturing a soldered product according to any one of the first to fourth aspects of the present invention, wherein the solder melting step is performed. Then, in a state where the soldering object is in a vacuum, the soldering object is heated to a temperature higher than a temperature at which the solder melts to melt the solder, and after the melting, the pressure is increased, In order to compress and reduce or eliminate the voids, a vacuum breaking step for breaking the vacuum; and a cooling step for cooling the soldering object after the vacuum breaking step are further provided.
With this configuration, since the voids can be crushed in a state where the solder is melted in the vacuum breaking process, and the solder can be solidified after the cavities are crushed, the fatigue life due to voids in the solder can be reduced. The decrease can be suppressed.

本発明の第６の態様に係る半田付け製品の製造方法は、上記本発明の第１の態様乃至第５の態様のいずれか１の態様に係る半田付け製品の製造方法において、前記半田がプリフォーム半田であり、前記仮固定剤が溶剤および粘度調整剤を含み、前記仮固定剤の沸点が前記半田の溶融温度よりも低い。
このように構成すると、仮固定剤の沸点が半田溶融温度よりも低いため、半田が溶融する温度になる前に仮固定剤は完全に気化し、半田溶融後に仮固定剤が半田内部に取り込まれることを回避できる。 A method for manufacturing a soldered product according to a sixth aspect of the present invention is the method for manufacturing a soldered product according to any one of the first to fifth aspects of the present invention. Reform solder, the temporary fixing agent includes a solvent and a viscosity modifier, and the boiling point of the temporary fixing agent is lower than the melting temperature of the solder.
With this configuration, since the boiling point of the temporary fixing agent is lower than the solder melting temperature, the temporary fixing agent is completely vaporized before reaching the temperature at which the solder melts, and the temporary fixing agent is taken into the solder after the solder is melted. You can avoid that.

本発明の第７の態様に係る半田付け製品の製造方法は、上記本発明の第１の態様乃至第５の態様のいずれか１の態様に係る半田付け製品の製造方法において、前記半田がプリフォーム半田であり、前記仮固定剤が溶剤であり、前記溶剤の沸点が前記半田の溶融温度よりも低い。
このように構成すると、溶剤の沸点が半田溶融温度よりも低いため、半田が溶融する温度になる前に溶剤は完全に気化し、半田溶融後に溶剤が半田内部に取り込まれることを回避できる。さらに、極めて容易に仮固定剤を準備することができる。さらに、仮固定剤を活性物質のような害になる物質を含まずに形成できる。 A method for manufacturing a soldered product according to a seventh aspect of the present invention is the method for manufacturing a soldered product according to any one of the first to fifth aspects of the present invention. Reform solder, the temporary fixing agent is a solvent, and the boiling point of the solvent is lower than the melting temperature of the solder.
With this configuration, since the boiling point of the solvent is lower than the solder melting temperature, the solvent is completely vaporized before reaching the temperature at which the solder melts, and the solvent can be prevented from being taken into the solder after the solder is melted. Furthermore, a temporary fixing agent can be prepared very easily. Furthermore, the temporary fixative can be formed without containing harmful substances such as active substances.

本発明の第８の態様に係る半田付け製品の製造方法は、上記本発明の第１の態様乃至第７の態様のいずれか１の態様に係る半田付け製品の製造方法において、前記還元ガスがギ酸ガスである。
このように構成すると、３００℃より低い温度で半田および半田付け対象物を還元することができる。 A method for manufacturing a soldered product according to an eighth aspect of the present invention is the method for manufacturing a soldered product according to any one of the first to seventh aspects of the present invention, wherein the reducing gas is Formic acid gas.
If comprised in this way, a solder and a soldering target object can be reduce | restored at the temperature lower than 300 degreeC.

本発明によれば、半田付けにおいて治具を用いないため、作業者の負担を軽減するとともに、半田付け工程の時間短縮が可能となり生産効率を向上させることができる。さらに、半田溶接のための熱が奪われることも無い。さらに、仮固定剤は気化するため、半田付け後に残るフラックス残渣等を抑制することができ、半田付け製品は洗浄を必要としない。   According to the present invention, since no jig is used for soldering, the burden on the operator can be reduced and the time for the soldering process can be shortened, thereby improving the production efficiency. Furthermore, heat for solder welding is not lost. Further, since the temporary fixing agent is vaporized, it is possible to suppress a flux residue remaining after soldering, and the soldered product does not require cleaning.

本発明の半田付け製品の製造方法を示すフローチャートである。It is a flowchart which shows the manufacturing method of the soldering product of this invention. 半田付け装置１の概略構成図である。1 is a schematic configuration diagram of a soldering apparatus 1. FIG. 本発明の半田付け製品の製造方法のうち、半田付け装置に関わる工程を詳細に示すフローチャートであり、半田付け装置１を用いた場合で説明したものである。It is a flowchart which shows the process regarding a soldering apparatus in detail among the manufacturing methods of the soldering product of this invention, and was demonstrated by the case where the soldering apparatus 1 was used.

以下、図面を参照して本発明の実施の形態について説明する。なお、各図において互いに同一または相当する部分には同一あるいは類似の符号を付し、重複した説明は省略する。また、本発明は、以下の実施の形態に制限されるものではない。   Embodiments of the present invention will be described below with reference to the drawings. In the drawings, the same or corresponding parts are denoted by the same or similar reference numerals, and redundant description is omitted. Further, the present invention is not limited to the following embodiments.

［半田付け製品の製造方法概要］
図１を参照して、本発明の第１の実施の形態に係る半田付け製品の製造方法を説明する。本願の半田付け製品の製造方法は、半田付け装置を用いて半田付けを行う場合の製造方法である。
図１は、半田付け製品の製造方法を示すフローチャートである。本願発明は、（１）半田と仮固定剤の提供工程（２）半田の仮止め工程（４）仮固定剤の気化工程（５）半田と半田付け対象物の還元工程（６）半田溶融工程を備える。さらに、必要に応じて、（３）不活性ガス工程（７）真空破壊工程（８）冷却工程を備えてもよい。 [Outline of soldering product manufacturing method]
With reference to FIG. 1, the manufacturing method of the soldered product which concerns on the 1st Embodiment of this invention is demonstrated. The manufacturing method of the soldered product of the present application is a manufacturing method in the case of performing soldering using a soldering apparatus.
FIG. 1 is a flowchart showing a method for manufacturing a soldered product. The present invention includes (1) a step of providing solder and temporary fixing agent (2) a step of temporarily fixing solder (4) a step of vaporizing temporary fixing agent (5) a step of reducing solder and an object to be soldered (6) a step of melting solder Is provided. Furthermore, you may provide (3) inert gas process (7) vacuum break process (8) cooling process as needed.

以下に各工程を詳細に説明する。
（１）半田と仮固定剤の提供工程
半田と仮固定剤とを準備する工程である。準備とは、半田と仮固定剤が存在する状態にすればよく、すでにあるものを用意する場合であってもよく、仮固定剤を調製して用意する場合であってもよい。
なお、仮固定剤とは半田を半田付け対象物に仮止めするために用いるものである。 Each step will be described in detail below.
(1) Step of providing solder and temporary fixing agent This is a step of preparing solder and temporary fixing agent. The preparation may be a state in which the solder and the temporary fixing agent are present, may be a case where an existing one is prepared, or a case where a temporary fixing agent is prepared and prepared.
The temporary fixing agent is used for temporarily fixing solder to an object to be soldered.

（２）半田の仮止め工程
半田付け対象物に仮固定剤を塗布し、塗布した仮固定剤上に半田を配置し、半田を仮止めする工程である。仮固定剤の塗布方法は特に限定されない。 (2) Temporary soldering step In this step, a temporary fixing agent is applied to an object to be soldered, solder is placed on the applied temporary fixing agent, and the solder is temporarily fixed. The method for applying the temporary fixing agent is not particularly limited.

（３）不活性ガス工程
半田および半田付け対象物を不活性ガス雰囲気下に配置する工程である。不活性ガスとしては、窒素またはアルゴンを挙げることができる。 (3) Inert gas process It is a process which arrange | positions solder and a soldering target object in inert gas atmosphere. As the inert gas, nitrogen or argon can be mentioned.

（４）仮固定剤の気化工程
加熱または減圧（真空）により仮固定剤を気化させる工程である。
例えば、半田付け対象物、仮固定剤、半田を加熱すると、まず仮固定剤の気化が始まる。仮固定剤が気化すると、溶融温度が気化温度よりも高い半田と半田付け対象物は溶融せず、半田と半田付け対象物間には表面の凹凸による間隙が生じる。 (4) Temporary fixing agent vaporization step This is a step of vaporizing the temporary fixing agent by heating or reduced pressure (vacuum).
For example, when an object to be soldered, a temporary fixing agent, and solder are heated, vaporization of the temporary fixing agent starts first. When the temporary fixing agent is vaporized, the solder whose soldering temperature is higher than the vaporizing temperature and the object to be soldered are not melted, and a gap due to surface irregularities is generated between the solder and the soldering object.

（５）半田と半田付け対象物の還元工程
さらに還元温度まで加熱し、仮固定剤を完全に気化させ、同時に還元ガスにより半田と半田付け対象物を還元する工程である。還元は仮固定剤の気化と同時であってもよく、気化後であってもよい。また、還元は、常圧であっても減圧（真空）であってもよい。
ここで還元とは、半田付けの際、半田付け対象物の表面や半田の表面の酸化膜等を除去することである。還元ガスとしては、例えば、ギ酸ガス、カルボン酸のガス、カルボン酸以外の有機酸のガス、有機酸以外の有機化合物のガス、有機化合物以外の他の還元性のガス（例えば水素ガス）を挙げることができる。還元温度を半田の溶融温度よりも低くする観点、および入手容易性の観点から、還元ガスとしてはギ酸ガスが好ましい。 (5) Solder and soldering object reduction step This is a step of further heating to the reduction temperature, completely evaporating the temporary fixing agent, and simultaneously reducing the solder and the soldering object with a reducing gas. The reduction may be performed simultaneously with the vaporization of the temporary fixing agent or may be performed after the vaporization. The reduction may be at normal pressure or reduced pressure (vacuum).
Here, the reduction means that the surface of the soldering object or the oxide film on the surface of the solder is removed at the time of soldering. Examples of the reducing gas include formic acid gas, carboxylic acid gas, organic acid gas other than carboxylic acid, organic compound gas other than organic acid, and other reducing gas other than organic compound (for example, hydrogen gas). be able to. From the viewpoint of making the reduction temperature lower than the melting temperature of the solder and from the viewpoint of availability, formic acid gas is preferred as the reducing gas.

（６）半田溶融工程
さらに半田溶融温度まで加熱し、半田付けを行う工程である。
半田は、前記還元ガスによる還元温度および還元時の気圧において溶融しないものが好ましい。すなわち、半田が溶融する温度は、還元温度よりも高い任意の温度であり、本実施の形態では還元温度よりも１０〜５０℃高い温度であることが好ましい。 (6) Solder melting step This is a step of further soldering by heating to the solder melting temperature.
The solder is preferably one that does not melt at the reducing temperature with the reducing gas and the pressure at the time of reduction. That is, the temperature at which the solder melts is an arbitrary temperature higher than the reduction temperature, and in this embodiment, the temperature is preferably 10 to 50 ° C. higher than the reduction temperature.

（７）真空破壊工程
真空状態で半田を溶融させた場合に、半田溶融後圧力を上げて、半田内部の空洞（ボイド）を圧縮する工程である。この工程により、溶融半田に巻き込まれた空気により半田内に形成したボイドを小さくする、または無くすことができる。 (7) Vacuum breaking step When the solder is melted in a vacuum state, the pressure is increased after the solder is melted to compress a void inside the solder. By this step, voids formed in the solder by the air entrained in the molten solder can be reduced or eliminated.

（８）冷却工程
溶融半田を冷却して固化させる工程である。冷却は自然冷却であっても、強制冷却であってもよい。溶融半田の固化により、半田付け製品が製造される。また、本発明の方法では、残渣が存在しないため、半田付け製品の洗浄は不要である。 (8) Cooling step This is a step of cooling and solidifying the molten solder. The cooling may be natural cooling or forced cooling. Soldered products are manufactured by solidification of the molten solder. Further, in the method of the present invention, since no residue is present, it is not necessary to clean the soldered product.

本発明の仮固定剤の気化温度、半田、半田付け対象物の融点、還元ガスの還元温度は、所定の気圧において、以下の関係を有するものである。「融点」とは、気圧にかかわらず物質が溶融する温度をいう。
仮固定剤の気化温度≦還元温度＜半田、半田付け対象物の融点 The vaporization temperature of the temporary fixing agent of the present invention, the solder, the melting point of the soldering object, and the reduction temperature of the reducing gas have the following relationship at a predetermined pressure. “Melting point” refers to the temperature at which a substance melts regardless of atmospheric pressure.
Tempering agent vaporization temperature ≤ reduction temperature <solder, melting point of soldering object

［半田］
本願発明では、プリフォーム（成形）半田を用いる。プリフォーム半田を用いるため、ペースト単体での半田付けに比べ半田量を増やすことができる。さらに、プリフォーム半田により、正確な半田量を把握することができる。
なお、本明細書で半田という場合は、プリフォーム半田を指す。
半田の合金組成は特に制限されない。バンプ形成やプリント基板の実装に今日使用されている各種半田合金が使用可能である。例えば、鉛フリー半田として用いられているＳｎ−Ａｇ系半田、Ｓｎ−Ａｇ−Ｃｕ系半田、Ｓｎ−Ａｇ−Ｃｕ−Ｂｉ系半田、Ｓｎ−Ａｇ−Ｉｎ−Ｂｉ系半田、Ｓｎ−Ｃｕ系半田、Ｓｎ−Ｚｎ系半田、Ｓｎ−Ｂｉ系半田等の鉛フリー半田合金を挙げることができる。
半田の形状は、例えば、箔、シート、ワッシャー、リング、ペレット、ディスク、リボン、インゴット（棒）、ワイヤー（線）、粉末（粒）、正方形、長方形、ボール、テープ、等であり、仮固定剤で仮止めできる限り形状は問わない。仮止めのし易さから、箔、ボールの形状が好ましい。半田箔の厚みは、例えば１００μｍ程度である。 [solder]
In the present invention, preform (molded) solder is used. Since preform solder is used, the amount of solder can be increased compared to soldering with a paste alone. Furthermore, an accurate amount of solder can be grasped by preform solder.
In the present specification, the term “solder” refers to preform solder.
The alloy composition of the solder is not particularly limited. Various solder alloys used today for bump formation and printed circuit board mounting can be used. For example, Sn-Ag solder, Sn-Ag-Cu solder, Sn-Ag-Cu-Bi solder, Sn-Ag-In-Bi solder, Sn-Cu solder used as lead-free solder, Examples thereof include lead-free solder alloys such as Sn—Zn solder and Sn—Bi solder.
The shape of the solder is, for example, foil, sheet, washer, ring, pellet, disk, ribbon, ingot (bar), wire (wire), powder (grain), square, rectangle, ball, tape, etc., and temporarily fixed The shape is not limited as long as it can be temporarily fixed with an agent. The shape of a foil or a ball is preferable because it can be temporarily fixed. The thickness of the solder foil is, for example, about 100 μm.

［仮固定剤］
仮固定剤は、半田付け対象物に半田を仮止めするものである。例えば、半田箔のように薄くて軽量なものは、仮固定剤として溶剤のみを用いることにより、溶剤の表面張力で箔を仮止めできる。すなわち、仮固定剤は溶剤であってもよい。または、半田の形状によっては溶剤に粘度調整剤を添加したものであってもよい。仮固定剤の粘性は半田を仮止めできる程度に調整すればよく、半田の形状に合わせて粘度調整剤の量を適宜調節する。
このように、溶剤や粘度調整剤は粘度調整の程度により種類や添加量を適宜変更することができる。溶剤や粘度調整剤は、例えば撹拌して混合または加熱しながら撹拌して混合すればよい。
なお、仮固定剤は半田が溶融する気圧・温度で完全に気化するものであり、半田接合後には残渣とならないものが好ましい。 [Temporary fixative]
The temporary fixing agent temporarily fixes the solder to the soldering object. For example, a thin and lightweight material such as a solder foil can be temporarily fixed with the surface tension of the solvent by using only a solvent as a temporary fixing agent. That is, the temporary fixing agent may be a solvent. Alternatively, depending on the shape of the solder, a solvent may be added with a viscosity modifier. The viscosity of the temporary fixing agent may be adjusted to such an extent that the solder can be temporarily fixed, and the amount of the viscosity adjusting agent is appropriately adjusted according to the shape of the solder.
Thus, the type and amount of the solvent and viscosity modifier can be appropriately changed depending on the degree of viscosity adjustment. The solvent and the viscosity modifier may be mixed by stirring or mixing while heating, for example.
The temporary fixing agent is preferably one that completely evaporates at the pressure and temperature at which the solder melts and does not become a residue after solder joining.

・溶剤
溶剤は、一般に用いられる液体溶剤や高粘性溶剤を用いることができる。例えば、アニリン、アミルアルコール、イソブチルアルコール、エタノール、エチレングリコールモノメチルエーテル、エチレングリコールモノメチルエーテルアセテート、エチルラクテート、エチレングリコールエチルエーテル、エチレングリコールエチルエーテルアセテート、エチレングリコールプロピルエーテル、ジエチレングリコールジメチルエーテル、ジプロピレングリコールジメチルエーテル、ジエチレングリコールエチルメチルエーテル、ジエチレングリコールイソプロピルメチルエーテル、ジプロピレングリコールモノメチルエーテル、ジエチレングリコールジエチルエーテル、ジエチレングリコールモノエチルエーテル、ジメチルスルホキシド、プロピレングリコール、プロピレングリコールモノメチルエーテル、プロピレングリコールメチルエーテルアセテート、プロピレングリコールジアセテート、プロパノール、ブチルアルコール、水、２−フェノキシエタノール、１，４−ジオキサン、３−メトキシ−３−メチル−１−ブタノール等が挙げられる。前記溶剤は、単独で、あるいは複数種類を混合して用いることができる。溶剤は、入手のし易さ、環境への影響、沸点の低さから、エタノール、プロパノール、水が好ましい。 -Solvent As the solvent, a commonly used liquid solvent or high viscosity solvent can be used. For example, aniline, amyl alcohol, isobutyl alcohol, ethanol, ethylene glycol monomethyl ether, ethylene glycol monomethyl ether acetate, ethyl lactate, ethylene glycol ethyl ether, ethylene glycol ethyl ether acetate, ethylene glycol propyl ether, diethylene glycol dimethyl ether, dipropylene glycol dimethyl ether, Diethylene glycol ethyl methyl ether, diethylene glycol isopropyl methyl ether, dipropylene glycol monomethyl ether, diethylene glycol diethyl ether, diethylene glycol monoethyl ether, dimethyl sulfoxide, propylene glycol, propylene glycol monomethyl ether, propylene Glycol methyl ether acetate, propylene glycol diacetate, propanol, butyl alcohol, water, 2-phenoxyethanol, 1,4-dioxane, 3-methoxy-3-methyl-1-butanol. The said solvent can be used individually or in mixture of multiple types. As the solvent, ethanol, propanol, and water are preferable because they are easily available, affect the environment, and have a low boiling point.

溶剤は、還元時の気圧・温度以下で気化するものが好ましい。溶剤が気化する温度は、還元温度よりも低いまたは同一の任意の温度であり、例えば０〜１００℃を挙げることができる。雰囲気の圧力を調整する機構により、常圧での沸点が還元温度よりも高い溶剤であっても、溶剤の気化温度を還元温度よりも低くすることができる。このように、溶剤は所定の気圧において還元温度以下で気化するものであればよい。   The solvent is preferably a solvent that vaporizes at a pressure or lower than that during reduction. The temperature at which the solvent vaporizes is any temperature lower than or the same as the reduction temperature, and examples thereof include 0 to 100 ° C. By the mechanism for adjusting the pressure of the atmosphere, the vaporization temperature of the solvent can be made lower than the reduction temperature even when the solvent has a boiling point at normal pressure higher than the reduction temperature. Thus, the solvent may be any solvent that vaporizes below the reduction temperature at a predetermined atmospheric pressure.

・粘度調整剤
粘度調整剤は、仮固定剤の粘度調整や物質の固着を促進させる。粘度調整剤は、還元時の気圧・温度以下で気化するものが好ましく、活性物質でない（非イオン性の）ものが好ましい。還元時の温度は、還元ガスの種類により決まるため、還元ガスに合わせて適宜選択する。
例えば、ウレア、シリカ、ポリマー（アクリル酸系、カルボン酸系など）、硬化ひまし油、蜜ロウ、カルナバワックス等が挙げられる。前記粘度調整剤は、単独で、あるいは複数種類を混合して用いることができる。
粘度調整剤を還元時の気圧・温度以下で気化させることができると、粘度調整剤が半田内に残渣として残らず、活性物質ではないため半田付け対象物（金属）を腐食させることもなく、洗浄も不要となるため好ましい。 ・ Viscosity modifiers Viscosity modifiers promote viscosity adjustment of temporary fixatives and adhesion of substances. Viscosity modifiers are preferably those that vaporize below the pressure and temperature during reduction, and those that are not active substances (nonionic) are preferred. Since the temperature at the time of reduction is determined by the type of the reducing gas, it is appropriately selected according to the reducing gas.
For example, urea, silica, polymer (acrylic acid, carboxylic acid, etc.), hardened castor oil, beeswax, carnauba wax and the like can be mentioned. The viscosity modifiers can be used alone or in combination.
If the viscosity modifier can be vaporized below the pressure and temperature during reduction, the viscosity modifier will not remain as a residue in the solder, and will not corrode the soldering object (metal) because it is not an active substance. This is preferable because cleaning is not necessary.

一例として、還元ガスにギ酸を用いて、還元温度を約２００℃とした場合は、仮固定剤は還元時までに気化すればよい。よって、昇温中に気化させる、または、気化させるための温度保持時間を設けてもよい。なお、ギ酸を用いると他の還元ガスよりも低い温度で還元できるため好ましい。   As an example, when formic acid is used as the reducing gas and the reduction temperature is about 200 ° C., the temporary fixing agent may be vaporized by the time of reduction. Therefore, vaporization may be performed during the temperature increase, or a temperature holding time for vaporization may be provided. It is preferable to use formic acid because it can be reduced at a lower temperature than other reducing gases.

［半田付け製品の製造方法詳細］
次に、図２の半田付け装置１を用いて、本願の半田付け製品の製造方法のうち装置に関わる工程をより具体的に説明する。しかし、本願発明に用いることのできる装置は半田付け装置１に限られない。
図２は、半田付け装置１の概略構成図である。半田付け装置１は、被接合部材の半田接合が行われる空間である処理空間１１ｓを形成するチャンバ１１を有する処理部１０と、還元ガスとしてのギ酸ガスＦをチャンバ１１に供給するギ酸供給部２０と、半田付け装置１内のギ酸ガスＦを排出する前に無害化させる触媒ユニット３３と、半田付け装置１の動作を制御する制御装置５０と、これらを収容する筐体１００とを備えている。 [Details of soldering product manufacturing method]
Next, using the soldering apparatus 1 of FIG. 2, the steps related to the apparatus in the manufacturing method of the soldered product of the present application will be described more specifically. However, the apparatus that can be used in the present invention is not limited to the soldering apparatus 1.
FIG. 2 is a schematic configuration diagram of the soldering apparatus 1. The soldering apparatus 1 includes a processing unit 10 having a chamber 11 that forms a processing space 11 s that is a space in which the members to be bonded are soldered, and a formic acid supply unit 20 that supplies formic acid gas F as a reducing gas to the chamber 11. And a catalyst unit 33 that renders the formic acid gas F in the soldering device 1 harmless before discharging, a control device 50 that controls the operation of the soldering device 1, and a housing 100 that houses these. .

半田付け装置１は、半田付け対象物としての基板Ｗと電子部品Ｐを、半田Ｓで接合する装置となっている。基板Ｗおよび電子部品Ｐは、共に、表面に金属部分を有しており、当該金属部分が半田を介して導通するように接合されることとなる。まず、チャンバ１１に搬入する前に、基盤Ｗ上に仮固定剤Ａを塗布し半田Ｓを載置して仮固定し、さらに半田Ｓ上に仮固定剤Ａを塗布し電子部品Ｐを載置して仮固定する。このように、基板Ｗおよび電子部品Ｐは、仮固定剤Ａ／半田Ｓ／仮固定剤Ａを挟んだ状態でチャンバ１１に搬入され、チャンバ１１内で仮固定剤Ａを気化させた後、半田Ｓが溶融されて接合される。
以下、基板Ｗ、半田Ｓ、電子部品Ｐが積重されて半田が溶融していない状態のものを被接合部材Ｂ（基板Ｗ、半田Ｓ、電子部品Ｐ）といい、半田Ｓが溶融して基板Ｗと電子部品Ｐとが接合された状態のものを半田付け製品Ｃということとする。 The soldering apparatus 1 is an apparatus for joining a substrate W as an object to be soldered and an electronic component P with solder S. Both the substrate W and the electronic component P have a metal portion on the surface, and the metal portion is joined so as to be conducted through solder. First, before carrying in the chamber 11, the temporary fixing agent A is apply | coated on the base | substrate W, the solder S is mounted and temporarily fixed, Furthermore, the temporary fixing agent A is apply | coated on the solder S, and the electronic component P is mounted. And temporarily fix. As described above, the substrate W and the electronic component P are loaded into the chamber 11 with the temporary fixing agent A / solder S / temporary fixing agent A interposed therebetween, and after the temporary fixing agent A is vaporized in the chamber 11, solder S is melted and joined.
Hereinafter, the state in which the substrate W, the solder S, and the electronic component P are stacked and the solder is not melted is referred to as a member B (substrate W, the solder S, the electronic component P), and the solder S is melted. A product in which the substrate W and the electronic component P are joined is referred to as a soldered product C.

チャンバ１１は、シャッタ１１ｄで搬入出口１１ａを塞ぐことにより、処理空間１１ｓを密閉することができるように構成されている。チャンバ１１は、処理空間１１ｓを、概ね１０Ｐａ（絶対圧力）に減圧しても耐えうるような材料や形状が採用されている。
チャンバ１１の内部には、被接合部材Ｂが載置されるキャリアプレート１２と、キャリアプレート１２を加熱するヒータ１３とが設けられている。 The chamber 11 is configured so that the processing space 11s can be sealed by closing the loading / unloading port 11a with the shutter 11d. The chamber 11 is made of a material and shape that can withstand the processing space 11 s even when the processing space 11 s is reduced to approximately 10 Pa (absolute pressure).
Inside the chamber 11, a carrier plate 12 on which the member to be joined B is placed and a heater 13 for heating the carrier plate 12 are provided.

ヒータ１３は、キャリアプレート１２を、半田の溶融温度よりも高い接合温度まで加熱することができるように構成されている。   The heater 13 is configured to be able to heat the carrier plate 12 to a bonding temperature higher than the melting temperature of the solder.

ギ酸供給部２０は、ギ酸ガスＦをチャンバ１１内に導く。なお、本説明では、還元ガスとしてギ酸ガスＦを用いているが、基板Ｗおよび電子部品Ｐの接合面に生成された金属酸化物を還元することができるものであれば、ギ酸ガスＦ以外の他の還元性のガスであってもよい。本説明では、還元温度を半田の溶融温度よりも低くする観点、および入手容易性の観点から、還元ガスとしてギ酸ガスＦを用いることとしている。   The formic acid supply unit 20 guides the formic acid gas F into the chamber 11. In this description, formic acid gas F is used as the reducing gas. However, any metal oxide other than formic acid gas F can be used as long as it can reduce the metal oxide generated on the bonding surface of substrate W and electronic component P. Other reducing gases may be used. In this description, formic acid gas F is used as the reducing gas from the viewpoint of making the reduction temperature lower than the melting temperature of the solder and from the viewpoint of availability.

触媒ユニット３３は、半田付け装置１から排出される排出ガスＥ中のギ酸を、環境に影響を与えない程度に無害化させる機器である。なお、気体Ｇは、チャンバ１１から排出されるガスの総称である。   The catalyst unit 33 is a device that renders formic acid in the exhaust gas E discharged from the soldering apparatus 1 harmless to the extent that it does not affect the environment. The gas G is a general term for gases discharged from the chamber 11.

真空ポンプ３１は、チャンバ１１内の圧力を概ね１０Ｐａ（絶対圧力）に減圧することができるようにチャンバ１１内の気体Ｇを排出する減圧ポンプとして配設される。   The vacuum pump 31 is disposed as a decompression pump that exhausts the gas G in the chamber 11 so that the pressure in the chamber 11 can be reduced to approximately 10 Pa (absolute pressure).

制御装置５０は、シャッタ１１ｄを開閉させることができるように構成されている。また、制御装置５０は、ヒータ１３のＯＮ−ＯＦＦおよび出力の変更を介して、キャリアプレート１２の加熱を行うことができるように構成されている。また、制御装置５０は、ギ酸ガスＦをチャンバ１１に向けて供給することができるように構成されている。また、制御装置５０は、真空ポンプ３１の発停を制御することができるように構成されている。また、制御装置５０は、後述する半田付け装置１の動作のシーケンスが記憶されている。   The control device 50 is configured to open and close the shutter 11d. Moreover, the control apparatus 50 is comprised so that the carrier plate 12 can be heated through ON-OFF of the heater 13 and a change of an output. Further, the control device 50 is configured to supply the formic acid gas F toward the chamber 11. Moreover, the control apparatus 50 is comprised so that the start / stop of the vacuum pump 31 can be controlled. The control device 50 stores an operation sequence of the soldering device 1 described later.

引き続き図３を参照して、本発明の実施の形態に係る半田付け製品の製造方法を半田付け装置との関係において詳細に説明する。図３は、半田付け装置１を用いた場合の半田付け製品の半田接合手順を示すフローチャートである。以下の説明で半田付け装置１の構成について言及しているときは、適宜図２を参照することとする。   With reference to FIG. 3, the method for manufacturing a soldered product according to the embodiment of the present invention will be described in detail in relation to the soldering apparatus. FIG. 3 is a flowchart showing a solder joining procedure for a soldered product when the soldering apparatus 1 is used. When the following description refers to the configuration of the soldering apparatus 1, FIG. 2 will be referred to as appropriate.

半田付け装置１に被接合部材Ｂを搬入するため、シャッタ１１ｄを開けるボタン（不図示）を押すと、制御装置５０は、真空ポンプ３１を作動させ、チャンバ１１内の気体Ｇの排気を開始した後（Ｓ１）、シャッタ１１ｄを開にする。併せて、キャリアプレート１２の大部分がチャンバ１１の外側に出るようにキャリアプレート１２を移動させる。シャッタ１１ｄを開ける前にチャンバ１１内の気体Ｇをチャンバ１１から排出させることで、シャッタ１１ｄを開けてもチャンバ１１内の気体Ｇが搬入出口１１ａを介して半田付け装置１の外に流出することを防ぐことができる。シャッタ１１ｄが開になり、キャリアプレート１２の大部分がチャンバ１１の外側に出て、キャリアプレート１２に被接合部材Ｂが載置されたら、キャリアプレート１２のチャンバ１１内への移動に伴って被接合部材Ｂがチャンバ１１内に搬入される（被接合部材搬入工程：Ｓ２）。   When a button (not shown) for opening the shutter 11d is pressed to carry the member B to be soldered into the soldering apparatus 1, the control device 50 activates the vacuum pump 31 and starts exhausting the gas G in the chamber 11. Later (S1), the shutter 11d is opened. At the same time, the carrier plate 12 is moved so that most of the carrier plate 12 comes out of the chamber 11. By discharging the gas G in the chamber 11 from the chamber 11 before opening the shutter 11d, the gas G in the chamber 11 flows out of the soldering apparatus 1 through the loading / unloading port 11a even if the shutter 11d is opened. Can be prevented. When the shutter 11d is opened, most of the carrier plate 12 comes out of the chamber 11, and the member B to be joined is placed on the carrier plate 12, the carrier plate 12 is moved along with the movement of the carrier plate 12 into the chamber 11. The joining member B is carried into the chamber 11 (joined member carrying-in process: S2).

被接合部材Ｂがチャンバ１１内に搬入されたら、制御装置５０は、シャッタ１１ｄを閉じて、チャンバ１１内を密閉する。次に、シャッタ１１ｄが開の時にチャンバ１１内に流入した大気を除去し、不活性ガスの雰囲気とするため、制御装置５０は、チャンバ１１内の気体Ｇの排気を行い、その後不活性ガスＮを導入する。この工程を繰り返すことにより、チャンバ１１内の酸素濃度を低下させる（不活性ガス置換工程：Ｓ３）。酸素濃度は５ｐｐｍ以下が好ましい。不活性ガスＮは、例えば窒素ガスである。   When the member to be joined B is carried into the chamber 11, the control device 50 closes the shutter 11 d and seals the inside of the chamber 11. Next, in order to remove the atmosphere that has flowed into the chamber 11 when the shutter 11d is opened and to create an inert gas atmosphere, the control device 50 exhausts the gas G in the chamber 11 and then the inert gas N. Is introduced. By repeating this process, the oxygen concentration in the chamber 11 is reduced (inert gas replacement process: S3). The oxygen concentration is preferably 5 ppm or less. The inert gas N is, for example, nitrogen gas.

次に制御装置５０は、ヒータ１３をＯＮにして、キャリアプレート１２の温度、ひいては被接合部材Ｂの温度を、仮固定剤Ａが気化（蒸発）する温度に昇温する（Ｓ４）。気化する温度まで昇温するにつれて仮固定剤Ａが蒸発し被接合部材Ｂから除去される。本実施の形態では、仮固定剤Ａの蒸発を促進するため、チャンバ１１内の圧力を真空に（減圧）することができる。
本実施の形態では、気化する温度が還元温度よりも低い場合で説明しているが、気化する温度は下記の還元温度と同一でもよい。同一の場合は、仮固定剤Ａの一部の蒸発と被接合部材Ｂの還元が同時に起こることになる。すなわち、（Ｓ４）工程と次工程である（Ｓ５）工程および（Ｓ６）工程が並行する場合が存在する。 Next, the control device 50 turns on the heater 13 and raises the temperature of the carrier plate 12 and thus the temperature of the member to be joined B to a temperature at which the temporary fixing agent A is vaporized (evaporated) (S4). As the temperature rises to the vaporizing temperature, the temporary fixing agent A evaporates and is removed from the joined member B. In the present embodiment, in order to promote the evaporation of the temporary fixing agent A, the pressure in the chamber 11 can be reduced to a vacuum (reduced pressure).
In the present embodiment, the case where the vaporization temperature is lower than the reduction temperature is described, but the vaporization temperature may be the same as the following reduction temperature. In the same case, the evaporation of a part of the temporary fixing agent A and the reduction of the bonded member B occur simultaneously. That is, there are cases where the (S4) step and the next (S5) step and (S6) step are parallel.

次に制御装置５０は、ヒータ１３をＯＮに維持して、キャリアプレート１２の温度、ひいては被接合部材Ｂの温度を還元温度に昇温する（Ｓ５）。還元温度は、ギ酸によって被接合部材Ｂの酸化物が還元される温度である。還元温度まで昇温が完了したら、制御装置５０は、ギ酸ガスＦをギ酸供給部２０からチャンバ１１内に供給する（Ｓ６）。ここで、本実施の形態では、還元温度は半田Ｓの溶融温度よりも低くなっているため、半田Ｓは溶融せず、仮固定剤Ａの気化により形成された間隙にギ酸ガスが浸入し、被接合部材Ｂが半田接合される前に酸化膜を好適に除去する。ギ酸ガスＦの供給を、チャンバ１１内を真空にしてから行うことにより、間隙にギ酸ガスＦが浸入し易くなる。被接合部材Ｂの温度を還元温度に昇温する工程（Ｓ５）およびギ酸ガスＦをチャンバ１１内に供給する工程（Ｓ６）が還元工程に相当する。   Next, the control device 50 keeps the heater 13 ON, and raises the temperature of the carrier plate 12 and thus the temperature of the member B to be reduced to the reduction temperature (S5). The reduction temperature is a temperature at which the oxide of the bonded member B is reduced by formic acid. When the temperature rise to the reduction temperature is completed, the control device 50 supplies the formic acid gas F from the formic acid supply unit 20 into the chamber 11 (S6). Here, in the present embodiment, since the reduction temperature is lower than the melting temperature of the solder S, the solder S does not melt, and the formic acid gas enters the gap formed by the vaporization of the temporary fixing agent A, The oxide film is suitably removed before the member to be joined B is soldered. By supplying the formic acid gas F after the chamber 11 is evacuated, the formic acid gas F can easily enter the gap. The step of raising the temperature of the member to be joined B to the reduction temperature (S5) and the step of supplying the formic acid gas F into the chamber 11 (S6) correspond to the reduction step.

還元工程（Ｓ５、Ｓ６）が終了したら、チャンバ１１内のギ酸ガスＦ雰囲気を維持したまま、ヒータ１３の出力を上げて、キャリアプレート１２の温度、ひいては被接合部材Ｂの温度を接合温度に昇温して半田を溶融させ、被接合部材Ｂの半田接合を行う（接合工程：Ｓ７）。接合温度は、半田Ｓの溶融温度よりも高い任意の温度であり、本実施の形態では溶融温度よりも３０〜５０℃高い温度としている。   When the reduction process (S5, S6) is completed, the output of the heater 13 is increased while the formic acid gas F atmosphere in the chamber 11 is maintained, and the temperature of the carrier plate 12 and thus the temperature of the member to be joined B are increased to the joining temperature. The solder is melted by heating, and the joined members B are soldered (joining step: S7). The joining temperature is an arbitrary temperature higher than the melting temperature of the solder S. In the present embodiment, the bonding temperature is 30 to 50 ° C. higher than the melting temperature.

被接合部材Ｂの半田接合を行ったら、制御装置５０は、ヒータ１３をＯＦＦにすると共に、真空ポンプ３１の作動およびメイン排気弁４１ｖを開にすることで、チャンバ１１内の真空を破壊し、チャンバ１１内からギ酸ガスＦを排出する（Ｓ８）。チャンバ１１内から排出されたギ酸ガスＦは、触媒ユニット３３に流入する。ギ酸ガスＦは、触媒ユニット３３でギ酸が分解され、ギ酸の濃度が所定の濃度以下に低減されて無害化され、排出ガスＥとして半田付け装置１から排出される（Ｓ９）。なお、ヒータ１３をＯＦＦにする（冷却を開始する）ことで、被接合部材Ｂの温度が低下し、融点未満になると、半田が固まって、半田付け製品Ｃとなる。このとき、キャリアプレート１２を強制的に冷却することで、半田の固化を早めてもよい。   After soldering the member to be joined B, the control device 50 turns off the heater 13 and breaks the vacuum in the chamber 11 by operating the vacuum pump 31 and opening the main exhaust valve 41v. The formic acid gas F is discharged from the chamber 11 (S8). The formic acid gas F discharged from the chamber 11 flows into the catalyst unit 33. The formic acid gas F is decomposed by the catalyst unit 33, the formic acid concentration is reduced to a predetermined concentration or less, rendered harmless, and discharged from the soldering apparatus 1 as an exhaust gas E (S9). When the heater 13 is turned off (cooling is started), the temperature of the member B to be joined decreases and becomes less than the melting point, so that the solder hardens and becomes the soldered product C. At this time, the solidification of the solder may be accelerated by forcibly cooling the carrier plate 12.

半田付け製品Ｃがチャンバ１１から搬出されたら（Ｓ１０）、制御装置５０は、連続運転が行われるか否かを判断する（Ｓ１１）。連続運転が行われる場合は、チャンバ１１内の気体Ｇの排気を行う工程（Ｓ１）に戻る。他方、連続運転が行われない場合は、メンテナンス運転を行う（Ｓ１２）。   When the soldering product C is unloaded from the chamber 11 (S10), the control device 50 determines whether or not the continuous operation is performed (S11). When the continuous operation is performed, the process returns to the step of exhausting the gas G in the chamber 11 (S1). On the other hand, when the continuous operation is not performed, the maintenance operation is performed (S12).

以上で説明したように、半田付け装置１によれば、筐体１００に、処理部１０、ギ酸供給部２０、触媒ユニット３３、制御装置５０等、真空中で半田接合を行うのに要する機器が収容されているので、ギ酸ガスＦを用いた半田接合を適切に半田付け装置１内で完結させることができる。また、本実施の形態に係る半田付け製品Ｃの製造方法によれば、半田Ｓ、仮固定剤Ａ、ギ酸ガスＦを用いて適切な真空半田付けを行うことができる。   As described above, according to the soldering apparatus 1, equipment required for performing solder bonding in a vacuum, such as the processing unit 10, the formic acid supply unit 20, the catalyst unit 33, and the control device 50, is provided on the casing 100. Since it is accommodated, the solder joint using the formic acid gas F can be appropriately completed in the soldering apparatus 1. In addition, according to the method for manufacturing the soldered product C according to the present embodiment, appropriate vacuum soldering can be performed using the solder S, the temporary fixing agent A, and the formic acid gas F.

以上の説明では、被接合部材Ｂとして、半田Ｓとともに基板Ｗ、電子部品Ｐを用いて説明したが、被接合部材は、半田接合に適した金属部分を表面に有する部材であれば、基板Ｗや電子部品Ｐ以外の部材であってもよい。   In the above description, the substrate W and the electronic component P are used as the member to be bonded B together with the solder S. However, if the member to be bonded is a member having a metal portion suitable for solder bonding on the surface, the substrate W Or a member other than the electronic component P.

また以上の説明では、被接合部材Ｂを、ギ酸ガスＦの雰囲気下で接合温度に昇温し溶融接合することとしたが、真空（例えば１００Ｐａ（絶対圧力）程度）中で接合温度に昇温して溶融接合することとしてもよい。被接合部材Ｂを真空中で溶融接合する場合は、処理排出工程（Ｓ８、Ｓ９）が、還元工程（Ｓ５、Ｓ６）の後に行われることとなる。   In the above description, the member B to be bonded is heated to the bonding temperature in the formic acid gas F atmosphere and melt-bonded. However, the temperature is increased to the bonding temperature in a vacuum (eg, about 100 Pa (absolute pressure)). It is good also as melt-joining. In the case where the members to be joined B are melt-bonded in a vacuum, the process discharge process (S8, S9) is performed after the reduction process (S5, S6).

また以上の説明では、被接合部材Ｂを、真空（例えば１００Ｐａ（絶対圧力）程度）中で還元温度に昇温して還元することとしたが、真空とせずに常圧で還元工程（Ｓ５、Ｓ６）および接合工程（Ｓ７）を行い半田接合してもよい。   In the above description, the member B to be bonded is reduced by raising the temperature to the reduction temperature in a vacuum (for example, about 100 Pa (absolute pressure)). However, the reduction process (S5, Solder joining may be performed by performing S6) and the joining step (S7).

本願の半田付け製品の製造方法は、さらに半田接合が完了した半田付け対象物をコーティングするコーティング工程を備えてもよい。本発明による半田接合では、残渣が無いためコーティング剤との密着性に問題が生じない。よって、コーティング工程によりコーティングすることにより、半田付け部が保護される。   The method for manufacturing a soldered product of the present application may further include a coating process for coating an object to be soldered after soldering is completed. In the solder joint according to the present invention, since there is no residue, there is no problem in adhesion with the coating agent. Therefore, the soldering part is protected by coating by a coating process.

以上のとおり、本願発明は仮固定剤を用いて半田付け対象物としての被接合部材を仮固定した後、半田接合を行う。よって、治具を用いて半田接合を行っていた従来法に比べ、極めて容易に半田接合を行うことができる。   As described above, in the present invention, after temporarily fixing a member to be bonded as a soldering object using a temporary fixing agent, solder bonding is performed. Therefore, solder bonding can be performed extremely easily as compared with the conventional method in which solder bonding is performed using a jig.

１ 半田付け装置
１１ チャンバ
１１ｓ 処理空間
２０ ギ酸供給部
３１ 真空ポンプ
３３ 触媒ユニット
４１ｖ メイン排気弁
５０ 制御装置
１００ 筐体
Ａ 仮固定剤
Ｂ 被接合部材
Ｃ 半田付け製品
Ｆ 還元ガス、ギ酸ガス
Ｇ 気体
Ｎ 不活性ガス
Ｐ 電子部品
Ｓ 半田
Ｗ 基板 DESCRIPTION OF SYMBOLS 1 Soldering apparatus 11 Chamber 11s Processing space 20 Formic acid supply part 31 Vacuum pump 33 Catalyst unit 41v Main exhaust valve 50 Control apparatus 100 Case A Temporary fixing agent B Joined member C Soldering product F Reducing gas, formic acid gas G Gas N Inert gas P Electronic component S Solder W Substrate

Claims (7)

半田と、前記半田を仮止めする仮固定剤とを提供する提供工程と；
前記仮固定剤で前記半田を半田付け対象物に仮止めする仮止工程と；
前記半田を仮止めした半田付け対象物を、真空中に置くか、または、前記半田が溶融する温度よりも低い所定の温度に加熱して、前記仮固定剤を気化させ前記半田と前記半田付け対象物の間に間隙を生じさせる気化工程と；
前記気化工程に並行して、またはその後に、前記半田が溶融する温度よりも低い所定の温度で、前記気化工程により残された前記半田と前記半田付け対象物を還元ガスで還元する還元工程と；
前記還元工程の後に、前記半田付け対象物を前記半田が溶融する温度以上の所定の温度に加熱して前記半田を溶融する半田溶融工程を備え；
前記気化工程前に、前記半田を仮止めした半田付け対象物を不活性ガス中に置く不活性ガス工程をさらに備え；
前記還元工程は、前記半田付け対象物が真空中にある状態で、前記間隙に還元ガスを導入し、前記半田付け対象物を還元する、
半田付け製品の製造方法。 A providing step of providing solder and a temporary fixing agent for temporarily fixing the solder;
A temporary fixing step of temporarily fixing the solder to an object to be soldered with the temporary fixing agent;
The soldering object temporarily fixed with the solder is placed in a vacuum, or heated to a predetermined temperature lower than the temperature at which the solder melts to vaporize the temporary fixing agent, and the solder and the soldering are performed. A vaporization step that creates a gap between the objects;
In parallel with or after the vaporization step, a reduction step of reducing the solder remaining in the vaporization step and the soldering object with a reducing gas at a predetermined temperature lower than a temperature at which the solder melts. ;
A solder melting step of heating the soldering object to a predetermined temperature equal to or higher than a temperature at which the solder melts to melt the solder after the reduction step;
An inert gas step of placing an object to be soldered with the solder temporarily fixed in an inert gas before the vaporizing step ;
In the reduction step, the soldering object is in a vacuum, a reducing gas is introduced into the gap, and the soldering object is reduced.
A method for manufacturing soldered products. 半田と、前記半田を仮止めする仮固定剤とを提供する提供工程と；
前記仮固定剤で前記半田を半田付け対象物に仮止めする仮止工程と；
前記半田を仮止めした半田付け対象物を、真空中に置くか、または、前記半田が溶融する温度よりも低い所定の温度に加熱して、前記仮固定剤を気化させ前記半田と前記半田付け対象物の間に間隙を生じさせる気化工程と；
前記気化工程に並行して、またはその後に、前記半田が溶融する温度よりも低い所定の温度で、前記気化工程により残された前記半田と前記半田付け対象物を還元ガスで還元する還元工程と；
前記還元工程の後に、前記半田付け対象物を前記半田が溶融する温度以上の所定の温度に加熱して前記半田を溶融する半田溶融工程を備え；
前記気化工程前に、前記半田を仮止めした半田付け対象物を不活性ガス中に置く不活性ガス工程をさらに備え；
前記気化工程は、前記半田付け対象物が真空中にある状態で加熱して、前記仮固定剤を気化させる、
半田付け製品の製造方法。 A providing step of providing solder and a temporary fixing agent for temporarily fixing the solder;
A temporary fixing step of temporarily fixing the solder to an object to be soldered with the temporary fixing agent;
The soldering object temporarily fixed with the solder is placed in a vacuum, or heated to a predetermined temperature lower than the temperature at which the solder melts to vaporize the temporary fixing agent, and the solder and the soldering are performed. A vaporization step that creates a gap between the objects;
In parallel with or after the vaporization step, a reduction step of reducing the solder remaining in the vaporization step and the soldering object with a reducing gas at a predetermined temperature lower than a temperature at which the solder melts. ;
A solder melting step of heating the soldering object to a predetermined temperature equal to or higher than a temperature at which the solder melts to melt the solder after the reduction step;
An inert gas step of placing an object to be soldered with the solder temporarily fixed in an inert gas before the vaporizing step ;
In the vaporizing step, the soldering object is heated in a vacuum state to vaporize the temporary fixing agent.
Method of manufacturing a semi-field with the product. 前記還元工程は、前記半田付け対象物が真空中にある状態で、前記間隙に還元ガスを導入し、前記半田付け対象物を還元する、
請求項２に記載の半田付け製品の製造方法。 In the reduction step, the soldering object is in a vacuum, a reducing gas is introduced into the gap, and the soldering object is reduced.
Manufacturing method of soldering product according to 請 Motomeko 2. 前記半田溶融工程は、前記半田付け対象物が真空中にある状態で、前記半田付け対象物を半田が溶融する温度以上に加熱して前記半田を溶融し、
前記溶融後、圧力を上げて、前記半田内部の空洞（ボイド）を圧縮して小さくする、または無くすために、前記真空を破壊する真空破壊工程と；
前記真空破壊工程の後に、前記半田付け対象物を冷却する冷却工程をさらに備える；
請求項１乃至請求項３のいずれか１項に記載の半田付け製品の製造方法。 In the solder melting step, in a state where the soldering object is in a vacuum, the soldering object is heated to a temperature above which the solder melts to melt the solder,
A vacuum breaking step of breaking the vacuum to increase or decrease the pressure after the melting and compress or reduce or eliminate the voids inside the solder;
A cooling step of cooling the soldering object after the vacuum breaking step;
The method for manufacturing a soldered product according to any one of claims 1 to 3. 前記半田がプリフォーム半田であり、
前記仮固定剤が溶剤および粘度調整剤を含み、
前記仮固定剤の沸点が前記半田の溶融温度よりも低い、
請求項１乃至請求項４のいずれか１項に記載の半田付け製品の製造方法。 The solder is a preform solder,
The temporary fixing agent includes a solvent and a viscosity modifier,
The boiling point of the temporary fixing agent is lower than the melting temperature of the solder,
The method for manufacturing a soldered product according to any one of claims 1 to 4. 前記半田がプリフォーム半田であり、
前記仮固定剤が溶剤であり、
前記溶剤の沸点が前記半田の溶融温度よりも低い、
請求項１乃至請求項４のいずれか１項に記載の半田付け製品の製造方法。 The solder is a preform solder,
The temporary fixative is a solvent;
The boiling point of the solvent is lower than the melting temperature of the solder,
The method for manufacturing a soldered product according to any one of claims 1 to 4. 前記還元ガスがギ酸ガスである、
請求項１乃至請求項６のいずれか１項に記載の半田付け製品の製造方法。
The reducing gas is formic acid gas;
The method for manufacturing a soldered product according to any one of claims 1 to 6.
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017126698A (en) * 2016-01-15 2017-07-20 富士電機株式会社 Semiconductor device member, semiconductor device manufacturing method, and semiconductor device member
JP6476342B1 (en) * 2018-10-15 2019-02-27 オリジン電気株式会社 Reducing gas supply device and method of manufacturing processed object
US10843300B2 (en) * 2015-09-30 2020-11-24 Origin Company, Limited Method for producing soldered product
US20230326903A1 (en) * 2022-04-08 2023-10-12 Kulicke And Soffa Industries, Inc. Bonding systems, and methods of providing a reducing gas on a bonding system

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019163575A1 (en) * 2018-02-23 2019-08-29 富士フイルム株式会社 Method of manufacturing bonded body, temporary-fixing member, and stacked body
WO2019170211A1 (en) * 2018-03-05 2019-09-12 Heraeus Deutschland GmbH & Co. KG Method for producing a sandwich arrangement
WO2019170213A1 (en) * 2018-03-05 2019-09-12 Heraeus Deutschland GmbH & Co. KG Method for producing a sandwich arrangement
EP3763477A4 (en) * 2018-03-09 2021-11-17 Origin Company, Limited Flux, solder paste, soldering process, method for producing soldering product, and method for producing bga package
JP6439893B1 (en) * 2018-05-25 2018-12-19 千住金属工業株式会社 Solder ball, solder joint and joining method
US11205633B2 (en) * 2019-01-09 2021-12-21 Kulicke And Soffa Industries, Inc. Methods of bonding of semiconductor elements to substrates, and related bonding systems
US11515286B2 (en) 2019-01-09 2022-11-29 Kulicke And Soffa Industries, Inc. Methods of bonding of semiconductor elements to substrates, and related bonding systems
JP6677844B1 (en) * 2019-04-26 2020-04-08 株式会社オリジン Heating device and method of manufacturing soldered object
JP6860729B2 (en) * 2019-07-26 2021-04-21 株式会社オリジン Soldered product manufacturing equipment and soldered product manufacturing method
EP4006959B1 (en) * 2019-07-26 2023-11-01 Origin Company, Limited Solder-attached product manufacturing device, and solder-attached product manufacturing method
JP7145839B2 (en) * 2019-12-18 2022-10-03 株式会社オリジン Soldering substrate manufacturing method and soldering apparatus
EP4064331A1 (en) * 2021-03-25 2022-09-28 Infineon Technologies AG Method for attaching a first connection partner to a second connection partner

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11224981A (en) * 1998-02-06 1999-08-17 Matsushita Electric Ind Co Ltd Soldering method and formation of solder bump
JP2002210555A (en) * 2001-01-18 2002-07-30 Fujitsu Ltd Soldering equipment
JP2006086546A (en) * 2003-03-10 2006-03-30 Hitachi Metals Ltd Method and device for loading conductive ball
JP2006210761A (en) * 2005-01-31 2006-08-10 Fujitsu Ltd Solder joining method and apparatus
JP2006222381A (en) * 2005-02-14 2006-08-24 Olympus Corp Method of mounting electronic component and method of manufacturing same
JP2007180447A (en) * 2005-12-28 2007-07-12 Toyota Industries Corp Soldering method, soldering apparatus, and method of manufacturing semiconductor device
JP2007266054A (en) * 2006-03-27 2007-10-11 Shinko Seiki Co Ltd Manufacturing method of semiconductor device
JP2012033518A (en) * 2010-06-28 2012-02-16 Ayumi Kogyo Kk Joint structure manufacturing method, heating and melting treatment method, and system for the same

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6042956B2 (en) * 1978-03-18 1985-09-25 カシオ計算機株式会社 Musical sound waveform generator for electronic musical instruments
US4712721A (en) * 1986-03-17 1987-12-15 Raychem Corp. Solder delivery systems
JP3294460B2 (en) * 1995-03-06 2002-06-24 株式会社日立製作所 Circuit board manufacturing method
JP3732639B2 (en) * 1998-01-08 2006-01-05 株式会社日立製作所 Soldering method and electronic device manufacturing method
JP2000216334A (en) * 1999-01-25 2000-08-04 Seiko Epson Corp Semiconductor device
US6445589B2 (en) * 1999-07-29 2002-09-03 Delphi Technologies, Inc. Method of extending life expectancy of surface mount components
JP4609617B2 (en) * 2000-08-01 2011-01-12 日本電気株式会社 Semiconductor device mounting method and mounting structure
US7331502B2 (en) * 2001-03-19 2008-02-19 Sumitomo Bakelite Company, Ltd. Method of manufacturing electronic part and electronic part obtained by the method
US6713318B2 (en) * 2001-03-28 2004-03-30 Intel Corporation Flip chip interconnection using no-clean flux
US20130175323A1 (en) * 2002-07-01 2013-07-11 Jian Zhang Serial thermal linear processor arrangement
US8274161B2 (en) * 2002-07-01 2012-09-25 Semigear Inc Flux-free chip to substrate joint serial linear thermal processor arrangement
CN1477703A (en) * 2002-08-02 2004-02-25 千住金属工业株式会社 Soldering ball assembly and producing method, method for forming welding block
US6841874B1 (en) * 2002-11-01 2005-01-11 Amkor Technology, Inc. Wafer-level chip-scale package
JP4505783B2 (en) * 2003-01-31 2010-07-21 日立金属株式会社 Solder bump manufacturing method and manufacturing apparatus
JP2005026579A (en) * 2003-07-04 2005-01-27 Fujitsu Ltd Mounting method of electronic component with solder bump and flux fill used therefor
DK1888294T4 (en) * 2005-05-26 2017-05-01 Alfa Laval Corp Ab PROCEDURE FOR HARDWARE OF STAINLESS STEEL ART
US20070007323A1 (en) * 2005-07-06 2007-01-11 International Business Machines Corporation Standoff structures for surface mount components
CN101679837B (en) * 2007-05-22 2013-10-30 六号元素有限公司 Coated CBN
WO2012174384A1 (en) * 2011-06-15 2012-12-20 Promerus Llc Thermally decomposable polymer compositions incorporating thermally activated base generators
JP5853525B2 (en) 2011-09-16 2016-02-09 富士電機株式会社 Semiconductor chip positioning jig and semiconductor device manufacturing method
TW201320207A (en) * 2011-11-15 2013-05-16 Ableprint Technology Co Ltd Solder reflow method for suppressing solder-splash
US9293636B2 (en) * 2012-08-01 2016-03-22 Flextronics Ap, Llc Solar cell pad dressing
JP6121562B2 (en) * 2012-12-17 2017-04-26 プロメラス， エルエルシー Pyrolytic polymer composition for forming microelectronic assemblies
JP6031059B2 (en) * 2014-03-31 2016-11-24 信越化学工業株式会社 Semiconductor device, stacked semiconductor device, post-sealing stacked semiconductor device, and manufacturing method thereof
WO2015174202A1 (en) * 2014-05-13 2015-11-19 株式会社村田製作所 Resin sealed module
JP6042956B1 (en) * 2015-09-30 2016-12-14 オリジン電気株式会社 Method for manufacturing soldered products
US10668558B2 (en) * 2016-03-29 2020-06-02 Ngk Insulators, Ltd. Metal wiring bonding structure and production method therefor

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11224981A (en) * 1998-02-06 1999-08-17 Matsushita Electric Ind Co Ltd Soldering method and formation of solder bump
JP2002210555A (en) * 2001-01-18 2002-07-30 Fujitsu Ltd Soldering equipment
JP2006086546A (en) * 2003-03-10 2006-03-30 Hitachi Metals Ltd Method and device for loading conductive ball
JP2006210761A (en) * 2005-01-31 2006-08-10 Fujitsu Ltd Solder joining method and apparatus
JP2006222381A (en) * 2005-02-14 2006-08-24 Olympus Corp Method of mounting electronic component and method of manufacturing same
JP2007180447A (en) * 2005-12-28 2007-07-12 Toyota Industries Corp Soldering method, soldering apparatus, and method of manufacturing semiconductor device
JP2007266054A (en) * 2006-03-27 2007-10-11 Shinko Seiki Co Ltd Manufacturing method of semiconductor device
JP2012033518A (en) * 2010-06-28 2012-02-16 Ayumi Kogyo Kk Joint structure manufacturing method, heating and melting treatment method, and system for the same

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10843300B2 (en) * 2015-09-30 2020-11-24 Origin Company, Limited Method for producing soldered product
JP2017126698A (en) * 2016-01-15 2017-07-20 富士電機株式会社 Semiconductor device member, semiconductor device manufacturing method, and semiconductor device member
US11107787B2 (en) 2016-01-15 2021-08-31 Fuji Electric Co., Ltd. Member for semiconductor device
JP6476342B1 (en) * 2018-10-15 2019-02-27 オリジン電気株式会社 Reducing gas supply device and method of manufacturing processed object
TWI683714B (en) * 2018-10-15 2020-02-01 日商歐利生股份有限公司 Reducing gas supplying apparatus and method for manufacturing processed target object
JP2020062648A (en) * 2018-10-15 2020-04-23 株式会社オリジン Reducing gas supply device and method of manufacturing processed object
WO2020079909A1 (en) * 2018-10-15 2020-04-23 株式会社オリジン Reduction gas supply device and method for manufacturing completely processed workpiece
US10933393B2 (en) 2018-10-15 2021-03-02 Origin Company, Limited Reducing gas supplying apparatus and method for manufacturing processed target object
US20230326903A1 (en) * 2022-04-08 2023-10-12 Kulicke And Soffa Industries, Inc. Bonding systems, and methods of providing a reducing gas on a bonding system
US12062636B2 (en) * 2022-04-08 2024-08-13 Kulicke And Soffa Industries, Inc. Bonding systems, and methods of providing a reducing gas on a bonding system

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