JP5992387B2 - Cleaning device, cleaning method and storage medium - Google Patents

Description

  The present invention relates to a cleaning apparatus, a cleaning method, and a computer-readable storage medium for immersing and cleaning an object to be processed in a processing tank in a cleaning tank storing a processing liquid for cleaning.

  For example, in the manufacturing process of semiconductor devices, elements such as transistors are formed on a semiconductor wafer (hereinafter simply referred to as a wafer) by various processes, but there are contaminations such as particles, organic contaminants, and metal impurities on the surface. Then, since the performance of the element deteriorates, it is necessary to clean the wafer and remove them. As such a wafer cleaning process, a process in which a predetermined processing solution is stored in a cleaning tank and the wafer is immersed therein is frequently used.

  In the cleaning process using such a cleaning tank, a cleaning apparatus in which a large number of cleaning tanks for cleaning in a batch manner using various processing liquids is used.

  By the way, a cover that covers the cleaning tank is provided on the cleaning tank to prevent foreign matters from entering the cleaning tank during the cleaning process. Foreign substances may adhere to the back surface of such a cover during the cleaning process.

For example, when the wafer is loaded into the cleaning tank with the chemical solution in the pretreatment process attached to the wafer, the chemical solution on the wafer may adhere to the back surface of the cover. In this case, when a cleaning process is performed using a processing liquid in the cleaning tank, the chemical solution on the back surface of the cover reacts with the processing liquid in the cleaning tank, and the reactant falls into the cleaning tank as particles and remains on the wafer surface. Sometimes.
JP 2007-7777

  The present invention has been made in consideration of such points, and an object thereof is to provide a cleaning device, a cleaning method, and a storage medium that can easily and easily clean a cover that covers a cleaning tank.

The present invention provides a cleaning tank including a cleaning tank used for cleaning the object to be processed, a cover that covers the cleaning tank from above, and an injection nozzle that is provided between the cover and the cleaning tank to spray a processing liquid. In a cleaning method for performing a cleaning process using an apparatus, the cover is opened and the object to be processed is carried into the cleaning tank, and the cover is closed and the object to be processed is entirely covered with the first processing liquid. A step of performing a first cleaning process in a state of being covered; and spraying the first processing liquid from the spray nozzle onto the liquid surface of the first processing liquid in the cleaning tank, and from the liquid surface of the first processing liquid And a step of cleaning the back surface of the cover with only the first treatment liquid that bounces back.

The present invention includes a cleaning tank used for cleaning an object to be processed, a cover that covers the cleaning tank from above, an injection nozzle that is provided between the cover and the cleaning tank, and jets a processing liquid, and the cleaning tank And the cover and a control device for driving and controlling the spray nozzle, the control device opens the cover, carries the object to be processed into the cleaning tank, and closes the cover. A first cleaning process in a state where the object to be processed is completely covered with the first processing liquid, and the first processing liquid is stored in the cleaning tank from the spray nozzle on the liquid surface of the first processing liquid. And cleaning the back surface of the cover with only the first processing liquid sprayed and rebounded from the liquid surface of the first processing liquid.

The present invention relates to a storage medium storing a computer program for causing a computer to execute a cleaning method. The cleaning method includes a cleaning tank used for cleaning an object to be processed, a cover that covers the cleaning tank, and the cover. In a cleaning method for performing a cleaning process using a cleaning apparatus provided with a spray nozzle provided on the back surface of the nozzle, the process opens the cover and carries the object into the cleaning tank. Performing a first cleaning process in a state where the cover is closed and the object to be processed is completely covered with the first processing liquid, and the first processing liquid is supplied from the spray nozzle to the first processing liquid in the cleaning tank. And a step of cleaning the back surface of the cover with only the first treatment liquid that rebounds from the liquid surface of the first treatment liquid.

  As described above, according to the present invention, the back surface of the cover covering the cleaning tank can be easily and reliably cleaned, and the chemicals do not react with each other to generate particles.

FIG. 1 is a schematic system diagram showing a cleaning apparatus according to an embodiment of the present invention. FIG. 2 is a sectional view showing the entire cleaning apparatus. 3 is a sectional view taken along line III-III in FIG. 4A to 4I are diagrams showing a cleaning method according to an embodiment of the present invention. FIG. 5 is a view showing characteristics of the cleaning method of the present invention. FIGS. 6A, 6B and 6C are views showing a mechanism of salt generation on the back surface of the cover.

  Hereinafter, an embodiment of the present invention will be described with reference to FIGS.

  1 is a schematic system diagram showing a cleaning apparatus according to an embodiment of the present invention, FIG. 2 is a sectional view showing the entire cleaning apparatus, FIG. 3 is a sectional view taken along line III-III in FIG. 2, and FIG. The figure which shows the washing | cleaning method by embodiment, FIG. 5 is a figure which shows the characteristic of the washing | cleaning method by embodiment of this invention.

  As shown in FIGS. 1 to 3, the cleaning apparatus according to the present embodiment includes a housing 1, a cleaning tank 2 and an outer tank 8 provided therein, and a predetermined tank is provided in the cleaning tank 2. The processing liquid is stored. Then, as will be described later, a predetermined treatment liquid is supplied into the cleaning tank 2 through a nozzle 3 (see FIGS. 2 and 3) provided in the cleaning tank 2 from a predetermined supply source. The processing liquid is stored. Then, a plurality of wafers W are immersed in the processing liquid, and the cleaning process is performed in a state where the processing liquid overflows from the cleaning tank 2. The treatment liquid overflowed from the cleaning tank 2 flows to the outer tank 8.

  In the cleaning tank 2, a plurality of, for example, 50 wafers W are held by the wafer holding member 4. The wafer holding member 4 supports the wafer holding unit 5, and the wafer holding unit 5 that holds the wafer W in the horizontal direction and extends upward from the end of the wafer holding unit 5 along the inner wall of the cleaning tank 2. The wafer holding part 5 is moved up and down through the supporting part 6 by a driving mechanism (not shown) so that the wafer W can be taken in and out of the inner tank 2. Delivery of the wafer W to the wafer holding member 4 is performed by an appropriate transfer device. The wafer holding unit 5 includes a first holding bar 5a that holds the vicinity of the lower end of the wafer W and a second holding bar 5b that holds the wafer W slightly above. A plurality of grooves for holding the wafer W are formed in the two holding bars 5a and 5b.

  A cover 10 that covers the cleaning tank 2 is provided above the cleaning tank 2 so as to be openable and closable. The cover 10 is divided into two divided pieces 10a and 10b at the center. The cover 10 is opened and closed by rotating the divided pieces 10a and 10b via the shafts 20a and 20b by the cover opening / closing mechanism 20.

  The cover 10 prevents particles and the like from falling into the cleaning tank 2 in the processing liquid and mixing the particles into the processing liquid, and covers the liquid surface of the cleaning tank 2 as wide as possible. Is preferred.

  As described above, the outer tank 8 for receiving the overflowed processing liquid is provided outside the cleaning tank 2. A processing liquid supply pipe 40 for supplying a processing liquid is connected to the nozzle 3 in the cleaning tank 2. A processing liquid supply mechanism 41 is disposed on the other end side of the processing liquid supply pipe 40. The processing liquid supply mechanism 41 includes an SC1 supply source 42 that supplies SC1 and a DIW supply source 43 that supplies pure water (DIW). The processing liquid supply pipe 40 includes pipes 46 extending from these. , 47 are connected via open / close valves 51, 52. Therefore, by operating the on-off valves 51 and 52, SC1 and DIW can be selectively supplied to the cleaning tank 2 as processing liquids.

  The treatment liquid supply pipe 40 is provided with a damper 58, a heater 59, a filter 60, and an opening / closing valve 61 in order from the upstream side. Then, the predetermined processing liquid is fed toward the cleaning tank 2, the processing liquid is heated to a predetermined temperature by the heater 59, the impurities in the processing liquid are removed by the filter 60, and then the processing liquid is supplied to the cleaning tank 2. The

  Further, as shown in FIG. 1, one end of a pipe 45 having an opening / closing valve 54 is connected to the processing liquid supply pipe 40, and an injection nozzle 2 </ b> A is connected to the other end of the pipe 45.

  The spray nozzle 2 </ b> A is disposed between the cover 10 provided above the cleaning tank 2 and the cleaning tank 2, and the processing liquid supplied from the processing liquid supply pipe 40 is used as the wafer W in the cleaning tank 2 and the liquid level of the processing liquid. It is designed to inject against. At this time, the processing liquid sprayed from the spray nozzle 2 </ b> A onto the liquid surface of the processing liquid bounces off the liquid surface and reaches the back surface of the cover 10, and the back surface of the cover 10 can be cleaned with the processing liquid bounced off from the liquid surface.

The injection nozzle 2A may be movable in the vertical direction. In this case, the injection direction of the injection nozzle 2A can be continuously changed in the vertical direction by a drive mechanism (not shown). For example, as shown in FIG. 5, the back surface of the cover 10 is cleaned with the first processing liquid L _{1 that} rebounds from the liquid surface toward the first processing liquid L ₁ side of the cleaning tank 2, or the injection nozzle 2 A is directly toward the rear surface of the cover 10, the first treatment liquid L ₁ can be cleaned back surface of the cover 10.

  On the other hand, treatment liquid discharge pipes 62 and 63 are connected to the bottom of the cleaning tank 2 and the center of the bottom of the outer tank 8, respectively, and open / close valves 64 and 65 are connected to these. When the processing liquid is replaced, the opening and closing valves 64 and 65 are opened to discharge the processing liquid stored in the cleaning tank 2 and the outer tank 1 from the processing liquid discharge pipes 62 and 63, and then the opening and closing valves 64 and 65 is closed and the next processing solution is supplied into the cleaning tank 2.

  Each component of the cleaning apparatus as described above, for example, an open / close valve provided in each pipe, a transfer mechanism of the wafer W, and the like are connected to and controlled by a control device 70A having a process controller 70. Connected to the process controller 70 is a user interface 71 including a keyboard that allows a process manager to input commands to manage the cleaning device, a display that visualizes and displays the operating status of the cleaning device, and the like. .

  Further, the process controller 70 includes a control program for realizing various processes executed by the cleaning device under the control of the process controller 70, and a program for causing each component unit to execute a process according to a processing condition, that is, a recipe. Is connected to the storage medium 72. The storage medium 72 for storing the recipe may be a storage medium such as a hard disk or a semiconductor memory, or may be a portable storage medium such as a CDROM or DVD. Note that the recipe may be appropriately transmitted to the storage medium 72 from another apparatus via, for example, a dedicated line.

  Then, if necessary, an arbitrary recipe is called from the storage medium 72 by an instruction from the user interface 71 and is executed by the process controller 70, so that a desired process in the cleaning apparatus is performed under the control of the process controller 70. Is done.

  Next, a cleaning method in the cleaning apparatus configured as described above will be described with reference to FIGS.

In the present embodiment, the wafer W is cleaned using SPM (chemical solution containing H ₂ SO ₄ and H ₂ O ₂ ) L ₀ in the cleaning tank 100 of the pretreatment cleaning apparatus for the processing in the cleaning tank 2. Processing is performed (see FIG. 4A). In this case, a cover 110 made up of divided pieces 110 a and 110 b is installed above the cleaning tank 100, and outside particles are not mixed into the cleaning tank 100 by the cover 110.

  Next, the cover 110 is opened, the wafer W is pulled out from the cleaning tank 100, and then the wafer W is transferred to the cleaning tank 2 of the cleaning apparatus according to the present invention by a transfer device (not shown). In this case, the SPM during the pretreatment cleaning process may adhere to the wafer W transferred to the upper part of the cleaning tank 2.

In the meantime, when the cleaning tank 2 is empty, the open / close valves 52 and 61 are opened, and pure water (DIW) is supplied from the DIW supply source 43 into the cleaning tank 2 through the treatment liquid supply pipe 40 and the nozzle 3. 2 is filled with pure water (DIW). Then, until the wafer W is immersed, the cover 10 is kept closed by the cover opening / closing mechanism 20. In this case, the cleaning tank 2 is heated by the heater 59 and is supplied with high-temperature DIW whose temperature is adjusted to 40 ° to 80 °. Such hot DIW is referred to as the first processing liquid _{L 1.}

Next, the cover 10 is opened by the cover opening / closing mechanism 20, and a plurality of, for example, 50 wafers W are transferred from a transfer device (not shown) with the wafer holding unit 5 of the wafer holding member 4 positioned above the cleaning tank 2. The wafer is transferred to the holding unit 5, the wafer holding member 4 is lowered by a drive mechanism (not shown), and the wafer W is immersed in the first processing liquid (high-temperature DIW) L ₁ in the cleaning tank 2 (see FIG. 4B). . When the cover 10 is opened by the cover opening / closing mechanism 20, as shown in FIG. 2, the divided pieces 10a, 10b are rotated by rotating the shafts 20a, 20b by a drive mechanism comprising a rotary actuator of the cover opening / closing mechanism 20. Let

Then, after immersing the wafer W to the first processing liquid L ₁ of the washing tank 2, as shown in FIG. 4 (c), by the cover opening and closing mechanism 20 to close the cover 10 to the state covering the liquid surface in the cover . After covering this way the cleaning tank 2 with the cover 10, and supplied from the nozzle 3 in the first processing liquid L ₁ of the cleaning tank 2, while overflowing the first treatment liquid L ₁ from the washing tank 2, or predetermined performing cleaning with the first processing liquid L ₁ stop overflow after overflow time first treatment liquid L ₁ from the washing tank 2 (first cleaning process).

Note that the immersion of the wafer W to the cleaning tank 2 in the first cleaning process, not limited to the above, transfer the wafer W in a state where the cleaning tank 2 is not filled with air or the first treatment liquid L ₁ and, thereafter, the cover opening and closing mechanism 20, and the cleaning tank 2 by closing the cover 10 in a state covered with a cover, the wafer W by supplying a first processing liquid L ₁ to the wafer W in the cleaning tank 2 is hidden well be immersed, also carry the wafer W in a state where the cleaning tank 2 is not filled with air or the first treatment liquid L _1, then the first processing liquid to the wafer W in the cleaning tank 2 is hidden L ₁ may be supplied to immerse the wafer W, and the cover opening / closing mechanism 20 may close the cover 10 and cover the cleaning tank 2 with the cover.

Next, the opening / closing valve 54 is opened, and the first processing liquid L ₁ (high-temperature DIW) is supplied to the injection nozzle 2A side, and the first processing liquid L ₁ is supplied from the injection nozzle 2A to the first processing in the cleaning tank 2. is injected to the wafer W and the first processing liquid L ₁ liquid surface which is HitaKiyoshi in the liquid L _1.

By injecting this way the first treatment liquid L ₁ from the injection nozzle 2A, it is possible to perform a cleaning process on the wafer W reliably. At the same time the first processing liquid L ₁ ejected from the ejection nozzle 2A is rebounded from the liquid surface reaches the back surface of the cover 10 to clean the rear surface of the cover 10.

Next FIG. 4 (c), the by FIGS. 5 and 6 (a) (b) ( c), the back surface of the occurrence of a salt of the action and the cover 10 at the time of injecting the first treatment liquid _{L 1} from the injection nozzle 2A Describe the mechanism.

As described above, the SPM during the pretreatment cleaning process of the process in the cleaning tank 2 adheres and remains on the wafer W carried into the cleaning tank 2. In this case, SPM adhering to the wafer W is mixed into the first processing liquid L ₁ in the cleaning tank 2, the first processing liquid L ₁ reacts with the first processing liquid L ₁ is evaporated. At this time, especially _H 2 SO ₄ component _{P 1} of the SPM included in the first processing liquid _{L 1} evaporated adheres to the rear surface of the cover 10 (see FIG. 5).

Then, the H ₂ SO ₄ component P ₁ adhering to the back surface of the cover 10 is cleaned with respect to the wafer W using SC 1 (second processing liquid) containing NH ₄ OH and H ₂ O ₂ in the cleaning tank 2 as described later. When the treatment is performed, the NH ₄ OH component P ₂ in the second treatment liquid L ₂ evaporates and adheres to the back surface of the cover 10, and the H ₂ SO ₄ component P ₁ and the NH ₄ OH component P _{2 form the} cover 10. It is conceivable that the salt P reacts on the back surface. In this case, the salt P generated on the back surface of the cover 10 may fall from the cover 10 and adhere to the surface of the wafer W as particles.

According to the present embodiment, on the other hand, the first processing liquid L ₁ is rebound from the first liquid surface of the treatment liquid L ₁ in the cleaning tank 2 which is injected from the injection nozzle 2A, the first treatment liquid L this rebounding ₁ can clean the back surface of the cover 10. Therefore it is possible to be attached is _H 2 SO ₄ component _{P 1} in the cover 10 rear surface is cleaned with the first processing liquid _{L 1} of the _H 2 SO ₄ component _{P 1} reliably. Therefore, even if the wafer W is subjected to the cleaning process using the second processing liquid (SC1) in the cleaning tank 2 after that, the H ₂ SO ₄ component P ₁ and the NH ₄ OH component P of SC1 are formed on the back surface of the cover 10. ₂ does not react to generate salt P. For this reason, the salt P does not remain as particles on the wafer W.

The first temperature of the treatment liquid L ₁ of the first treatment liquid L ₁ bouncing from the first liquid surface of the treatment liquid L ₁ in the cleaning tank 2 which is injected from the injection nozzle 2A is preferably 40 ° C. to 80 ° C., the cover 10 H ₂ SO ₄ component P 1 on the back surface can be effectively cleaned. Although the first temperature of the treatment liquid L ₁ which is injected from the first treatment liquid L ₁ and the injection nozzle 2A which is supplied into the cleaning tank 2 is above were the same temperature, not limited to this, the cleaning tank 2 to may first temperature of the treatment liquid L ₁ which is injected from the first treatment liquid L ₁ and the injection nozzle 2A which is supplied even at different temperatures, the first treatment liquid rebounded from the first liquid surface of the treatment liquid L ₁ L _If the temperature of ₁ is 40 ° C. to 80 ° C., it can be reliably washed. Further, while injecting the first liquid level of the treatment liquid L ₁ in the cleaning tank 2 from the injection nozzle 2A, a continuous first processing liquid L ₁ from the nozzle 3 provided in the washing tank 2, or may be the flow of H ₂ sO ₄ component P1 which has adhered to the first processing liquid L ₁ from the cleaning tank 2 by intermittently ejecting the cover 10 by overflowing into outer tank 8 is not limited thereto, first processing liquid first processing liquid discharge of L ₁ (cleaning tank 2 from the first processing from the nozzles 3 provided in the injection and Kiyoshiso within 2 to L ₁ of the liquid surface of the cleaning tank 2 from the injection nozzle 2A it may be carried out overflowing the liquid L ₁₎ alternately.

Next, as shown in FIG. 4 (d), to close the opening and closing valve 61, stopping the first feed of the treatment liquid L ₁ of the nozzle 3. Next, the opening and closing valves 64 and 65 are opened, and the first processing liquid L ₁ is discharged from the cleaning tank 2 and the outer tank 8 through the processing liquid discharge pipes 62 and 63. While the other off valve 54 is opened, the nozzle 2A is injected the first treatment liquid L ₁ to the wafer W, while suppressing as exposed wafer W is not dry, the surface of the wafer W by the first processing liquid L ₁ Perform a cleaning process.

Next, as shown in FIG. 4E, the on-off valves 64 and 65 are closed, the on-off valve 51 and the on-off valve 61 are opened, and the inside of the cleaning tank 2 is passed from the SC1 supply source 42 through the treatment liquid supply pipe 40 and the nozzle 3. to, _NH 4 OH and _H 2 _{O 2} SC1 includes a (second treatment liquid) is supplied to _{L 2,} while the cleaning tank 2 overflow a second treatment liquid _{L 2,} or the second processing liquid a predetermined time L ₂ a cleaning process using a second processing liquid L ₂ from the cleaning tank 2 to the wafer W to stop the overflow after overflow the applied (second cleaning process).

In this case, the cleaning tank 2 is covered by the cover 10 installed above, and the NH ₄ OH component P ₂ in the second treatment liquid L ₂ in the cleaning tank 2 evaporates and reaches the back surface of the cover 10. Is also possible.

However, according to this embodiment, before the injection from the injection nozzle 2A in step a first treatment liquid L ₁ to the first processing liquid L ₁ in the cleaning tank 2, the first processing liquid in the cleaning tank 2 L ₁ By washing the back surface of the cover 10 with the first treatment liquid L _{1 that} bounces off the liquid surface, the H ₂ SO ₄ component P ₁ remaining on the back surface of the cover 10 is washed and removed (FIG. 4C). reference). Therefore, even if the NH ₄ OH component P ₂ in the second treatment liquid L ₂ in the cleaning tank 2 evaporates and reaches the back surface of the cover 10, H ₂ SO ₄ component P ₁ and NH ₄ are formed on the back surface of the cover 10. The salt P is not generated by the reaction with the OH component P _2, and the generated salt P does not adhere to the wafer W as particles.

Next, as shown in FIG. 4 (f), the opening / closing valve 52 and the opening / closing valve 61 are opened, and DIW is supplied from the DIW supply source 43 into the cleaning tank 2 through the treatment liquid supply pipe 40 and the nozzle 3. In this case, low temperature (about room temperature) DIW that is not heated is supplied to the cleaning tank 2. Such cold DIW called a third treatment liquid _{L 3.}

Thus, the low temperature DIW (third processing liquid) L ₃ is supplied into the cleaning tank 2, and the second processing liquid L ₂ is replaced with the third processing liquid L ₃ while overflowing the processing liquid from the cleaning tank 2. Thereafter, a cleaning process using a third treatment liquid L ₃ to the wafer W is subjected (the third cleaning process).

In the cleaning process using the third processing liquid L3, during the cleaning process, by supplying a third processing liquid L3 may overflow, and the second processing liquid L ₂ from the third treatment liquid L ₃ The overflow may be stopped when the replacement with is completed.

  In FIG. 4F, the cover 10 continues to cover the cleaning tank 2.

Next, as shown in FIG. 4G, the on-off valves 64 and 65 are opened, and the third processing liquid L ₃ is discharged from the cleaning tank 2 and the outer tank 8. Off valve 61 is closed simultaneously, the opening and closing valve 54 is opened, the third processing liquid L ₃ from the injection nozzle 2A injected to the wafer W, to clean the wafer W by the third processing liquid L _3. The third treatment liquid L ₃ after cleaning is discharged from the cleaning tank 2.

Next, as shown in FIG. 4 (h), the opening and closing valve 54 is closed, the opening and closing valve 61 is opened to supply the third processing liquid L ₃ into the cleaning tank 2 through the nozzle 3, from the cleaning tank 2 3 while the overflow processing solution L _3, repeated washing process using the third treatment liquid L ₃ to the wafer W (the third cleaning process).

  During the steps shown in FIGS. 4G and 4H, the cleaning tank 2 is covered with a cover 10.

  Next, as shown in FIG. 4 (i), the cover 10 is opened, and the wafer W in the cleaning tank 2 is transferred outward through the opened cover 10, and a drying process is performed on the wafer W in a subsequent process. The

According to the present embodiment as described above, in the process shown in FIG. 4 (c), and injected from the injection nozzle 2A a first treatment liquid L ₁ to the first processing liquid L ₁ in the cleaning tank 2, the cleaning tank because the first treatment liquid L ₁ rebounding from the first liquid surface of the treatment liquid L ₁ in 2 can be cleaned back surface of the cover 10, H ₂ sO ₄ component P ₁ on the back surface of the cover 10 are not remain In addition, the H ₂ SO ₄ component P ₁ can be reliably washed and removed. Therefore, in the step shown in FIG. 4E, even if the NH ₄ OH component P ₂ in the second treatment liquid L ₂ in the cleaning tank 2 evaporates and reaches the back surface of the cover 10, The H ₂ SO ₄ component P ₁ and the NH ₄ OH component P ₂ do not react to generate the salt P, and the generated salt P does not adhere to the wafer W as particles.

Also in the step shown in FIG. 4 (c), from the injection nozzle 2A by ejecting first treatment liquid L ₁ to the wafer W can be reliably cleaned the wafer W, the first treatment liquid ejected from the same time the injection nozzle 2A L ₁ rebounds from the surface of the first treatment liquid L ₁ in the cleaning tank 2 and the back surface of the cover 10 can be cleaned.

  In addition, in the present Example, although the washing tank 2 and the outer tank 8 were provided integrally, the outer tank 8 does not need to be provided integrally. For example, the form which receives the process liquid which overflowed from the washing tank 2 below may be sufficient. There is no particular limitation to the above.

DESCRIPTION OF SYMBOLS 1 Housing | casing 2 Cleaning tank 2A Injection nozzle 3 Nozzle 4 Wafer holding mechanism 5 Wafer holding part 8 Outer tank 10 Cover 10a, 10b Split piece 20 Cover opening / closing mechanism 20a, 20b Shaft 40 Processing liquid supply piping 41 Processing liquid supply mechanisms 62, 63 Processing liquid discharge piping 70 Process controller 70A Control device 72 Storage medium W Semiconductor wafer L ₀ Chemical liquid L ₁ First processing liquid L ₂ Second processing liquid L ₃ Third processing liquid

Claims (13)

Using a cleaning apparatus including a cleaning tank used for cleaning an object to be processed, a cover that covers the cleaning tank from above, and an injection nozzle that is provided between the cover and the cleaning tank and injects a processing liquid. In a cleaning method for performing a cleaning process,
Opening the cover and carrying the object into the cleaning tank;
Applying the first cleaning process with the cover closed and the object to be treated being completely covered with the first treatment liquid;
The first processing liquid is sprayed from the spray nozzle onto the surface of the first processing liquid in the cleaning tank, and the back surface of the cover is cleaned only by the first processing liquid that rebounds from the liquid surface of the first processing liquid. And a process of
A cleaning method comprising:   When jetting the first processing liquid from the spray nozzle, the first processing liquid is discharged through a nozzle provided in the cleaning tank to overflow the first processing liquid from the cleaning tank. The cleaning method according to claim 1.   After the back surface of the cover is cleaned, the first processing liquid in the cleaning tank is replaced with the second processing liquid while the cover is closed, and the second processing liquid is used for the second processing liquid. The cleaning method according to claim 1, further comprising a step of performing a cleaning process.   4. The SPM as a chemical solution is attached to the object to be processed conveyed into the cleaning tank, the first processing liquid contains pure water, and the second processing liquid contains SC1. Cleaning method.   The cleaning method according to claim 4, wherein the first treatment liquid that rebounds from the liquid surface of the first treatment liquid contains pure water at 40 ° C. to 80 ° C. 6.   The spray nozzle sprays the first processing liquid to the liquid surface of the first processing liquid in the cleaning and also sprays the first processing liquid to the back surface of the cover. Item 6. The cleaning method according to any one of Items 1 to 5. A cleaning tank used for cleaning the object to be processed;
A cover that covers the cleaning tank from above;
An injection nozzle that is provided between the cover and the cleaning tank and injects a processing liquid;
The cleaning tank, the cover, and a control device that drives and controls the spray nozzle,
The control device includes:
Opening the cover, carrying the object to be processed into the cleaning tank,
A first cleaning process in a state where the cover is closed and the object to be processed is completely covered with the first processing liquid;
The cover with only the first processing liquid sprayed from the spray nozzle onto the liquid surface of the first processing liquid stored in the cleaning tank and rebounds from the liquid surface of the first processing liquid. Cleaning the backside of
The cleaning apparatus characterized by performing.   The control device discharges the first processing liquid through a nozzle provided in the cleaning tank and injects the first processing liquid from the cleaning tank when jetting the first processing liquid from the spray nozzle. The cleaning apparatus according to claim 7, wherein: The control device includes:
After the back surface of the cover is cleaned, the first processing liquid in the cleaning tank is replaced with the second processing liquid while the cover is closed, and the second processing liquid is used for the second processing liquid. 9. The cleaning apparatus according to claim 7, further comprising performing a cleaning process.   The SPM as a chemical solution is attached to the object to be processed conveyed into the cleaning tank, the first processing liquid includes pure water, and the second processing liquid includes SC1. Cleaning device.   The cleaning apparatus according to claim 10, wherein the first treatment liquid that rebounds from the liquid surface of the first treatment liquid contains pure water at 40 ° C. to 80 ° C. 11.   The spray nozzle sprays the first processing liquid to the liquid surface of the first processing liquid in the cleaning tank and also sprays the first processing liquid to the back surface of the cover. The cleaning device according to any one of claims 7 to 11. In a storage medium storing a computer program for causing a computer to execute a cleaning method,
The cleaning method is
A cleaning process is performed using a cleaning tank that includes a cleaning tank used for cleaning an object to be processed, a cover that covers the cleaning tank, and a spray nozzle that is provided on the back surface of the cover and that sprays a processing liquid. In the cleaning method,
Opening the cover and carrying the object into the cleaning tank;
Applying the first cleaning process with the cover closed and the object to be treated being completely covered with the first processing liquid;
Spraying the first processing liquid from the spray nozzle onto the first processing liquid in the cleaning tank, and cleaning the back surface of the cover with only the first processing liquid rebounding from the liquid surface of the first processing liquid; ,
A storage medium comprising:

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