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JP5987190B2 - Mold for sealing semiconductor device and semiconductor device - Google Patents

Mold for sealing semiconductor device and semiconductor device Download PDF

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JP5987190B2
JP5987190B2 JP2012210410A JP2012210410A JP5987190B2 JP 5987190 B2 JP5987190 B2 JP 5987190B2 JP 2012210410 A JP2012210410 A JP 2012210410A JP 2012210410 A JP2012210410 A JP 2012210410A JP 5987190 B2 JP5987190 B2 JP 5987190B2
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mold
sealing
semiconductor device
lower mold
upper mold
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JP2014067771A (en
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憲司 西田
憲司 西田
斉藤 浩二
浩二 斉藤
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Mitsubishi Electric Corp
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Description

この発明は、トランスファ成形により半導体素子を樹脂封止するための半導体装置封止用金型及びその金型を用いて製造された半導体装置に関するものである。   The present invention relates to a semiconductor device sealing mold for resin-sealing a semiconductor element by transfer molding and a semiconductor device manufactured using the mold.

従来の半導体装置の樹脂封止方法には、トランスファ成形と呼ばれる手法が採用されている。これは、加熱・加圧により溶融した熱硬化性樹脂(エポキシ樹脂等)をランナ、ノズルを介して金型内に充填し、被封止部材(半導体素子等を実装した基板等)を熱硬化性樹脂により封止する手法である。   As a conventional resin sealing method for semiconductor devices, a technique called transfer molding is employed. This is done by filling a mold with a thermosetting resin (epoxy resin, etc.) melted by heating and pressurizing via a runner and nozzle, and thermosetting the member to be sealed (substrate mounted with a semiconductor element, etc.). This is a method of sealing with a functional resin.

トランスファ成形においては、高温化における化学反応により硬化が促進する熱硬化性樹脂が用いられるが、溶融した封止樹脂材料を金型内に充填した後、充分に硬化が進行するまで高温に保持する時間が必要であり、サイクルタイムが長く生産性が低いという問題があった。   In transfer molding, a thermosetting resin whose curing is accelerated by a chemical reaction at a high temperature is used. After the molten sealing resin material is filled in a mold, it is kept at a high temperature until the curing sufficiently proceeds. There is a problem that time is required and cycle time is long and productivity is low.

熱硬化性樹脂の硬化を促進するためには投入熱量を大きくすればよいが、溶融した封止樹脂材料の粘度は硬化に伴い著しく増加する。このため、金型温度を高く設定すると封止樹脂材料の金型内への充填が完了する前に粘度が急増し、溶融した封止樹脂材料の流動性が失われ、未充填となる恐れがある。金型内に充填する封止樹脂材料の体積を調整する機構をカル部と称し、ランナを介して複数の金型製品部に結合している。このカル部は、樹脂体積の調整機構のためある程度の体積を有しており、カル部における封止樹脂材料の硬化速度が遅い。   In order to accelerate the curing of the thermosetting resin, the input heat amount may be increased, but the viscosity of the molten sealing resin material increases remarkably with the curing. For this reason, if the mold temperature is set high, the viscosity rapidly increases before the sealing resin material is filled into the mold, and the fluidity of the molten sealing resin material may be lost and unfilled. is there. A mechanism for adjusting the volume of the sealing resin material filled in the mold is referred to as a cull part, and is coupled to a plurality of mold product parts via a runner. The cull portion has a certain volume due to the resin volume adjustment mechanism, and the curing rate of the sealing resin material in the cull portion is slow.

また、加熱体積の大きな金型全体を180℃程度の高温に昇温し、且つ金型温度を高温に保持する必要があるため、熱源の容量及び数量が多数必要となる。また、熱源の数量が増えると熱源を配置する領域を確保する必要があり、それに伴い金型全体の体積を大きくなる。以上の理由により、トランスファ成形用金型の製造コストが高価になるという課題があった。   Further, since it is necessary to raise the temperature of the entire mold having a large heating volume to a high temperature of about 180 ° C. and to maintain the mold temperature at a high temperature, a large number and capacity of heat sources are required. Further, when the number of heat sources increases, it is necessary to secure a region for arranging the heat sources, and accordingly, the volume of the entire mold is increased. For the above reasons, there has been a problem that the manufacturing cost of the transfer molding die becomes expensive.

特許文献1においては、半導体素子を実装した被封止部材を上下の金型内でトランスファ成形することによって樹脂封止する半導体装置封止用金型において、上型がカル部及び製品部を含む第1上型と、その上部に重ねられる第2上型とを備え、第1上型及び第2上型の間に断熱層が介在されると共に、カル部と断熱層との間であって、金型のうちの下型に形成されたポット部内で進退動自在に配設されたプランジャの進退動の軸上に加熱源が配置されている。   In Patent Document 1, in a mold for sealing a semiconductor device in which a sealing member mounted with a semiconductor element is resin-molded by transfer molding in upper and lower molds, the upper mold includes a cull part and a product part. A first upper mold and a second upper mold stacked on top of the first upper mold, a heat insulating layer interposed between the first upper mold and the second upper mold, and between the cull portion and the heat insulating layer, The heating source is disposed on the axis of the plunger that is movably moved back and forth within the pot portion formed in the lower mold of the mold.

カル部に連結するプランジャの進退動軸上に加熱源を配置することにより、硬化速度の小さいカル部を中心に加熱をおこない、樹脂封止材料の硬化を促進できる。   By disposing a heating source on the advancing / retracting shaft of the plunger connected to the cull portion, heating is performed around the cull portion having a low curing speed, and curing of the resin sealing material can be promoted.

特開2007−287925号公報JP 2007-287925 A

しかしながら、第1上型のみに熱源及び断熱材を配置するため、金型の加熱が局所的となり上型と下型の間で温度勾配が生じることが予想される。温度勾配により封止樹脂材料の硬化挙動にばらつきが生じると、硬化時間が長くなる、局所的にヒケ、反りが生じる。また、成形と成形の間におこなう金型清掃作業、金型への被封止材料及び封止樹脂材料の配置作業の際に上下型を「開」状態にしておく必要があるが、この間、加熱源を有さない下型から熱が逃げるばかりとなり、下型温度が低下し、上下型間の温度差は更に大きくなることが考えられる。   However, since the heat source and the heat insulating material are disposed only in the first upper mold, it is expected that the heating of the mold becomes local and a temperature gradient is generated between the upper mold and the lower mold. When variation occurs in the curing behavior of the sealing resin material due to the temperature gradient, the curing time becomes long, and local sink and warp occur. In addition, it is necessary to keep the upper and lower molds in the `` open '' state during mold cleaning work performed between moldings, placement of the sealing material and sealing resin material on the mold, It is conceivable that the heat just escapes from the lower mold having no heating source, the lower mold temperature is lowered, and the temperature difference between the upper and lower molds is further increased.

この発明に係る半導体装置封止用金型は、第1上型および第1上型を覆う第2上型で構成される上金型と、第1下型および第1下型を覆う第2下型で構成される下金型と、第2下型に設けられ封止樹脂材料のタブレットを投入するポット部と、ポット部内を進退動自在に配置されたプランジャと、半導体素子を封止樹脂材料でトランスファ成形する製品部と、プランジャの軸上に配置され、充填される封止樹脂材料の体積を調整するカル部と、製品部およびカル部を繋ぐゲート部とを備えた半導体装置封止用金型であって、カル部の近傍で第1上型に配置される第1の熱源と、第1下型に配置される第2の熱源と、前記上金型および前記下金型の少なくとも一方に外部から前記製品部への突き出し部とを備え、前記第2上型および前記第2下型は、前記第1上型および前記第1下型よりも断熱性が優れた材料からなり、前記突き出し部は、前記製品部側よりも前記外部側の方が断熱性が優れた材料からなるものである。
The mold for sealing a semiconductor device according to the present invention includes an upper mold composed of a second upper mold that covers the first upper mold and the first upper mold, and a second that covers the first lower mold and the first lower mold. A lower die constituted by a lower die, a pot portion provided in a second lower die for inserting a tablet of a sealing resin material, a plunger arranged to move forward and backward in the pot portion, and a semiconductor element for sealing resin Semiconductor device sealing provided with a product part to be transfer-molded with a material, a cull part arranged on the plunger shaft for adjusting the volume of a sealing resin material to be filled, and a gate part connecting the product part and the cull part A first heat source disposed in the first upper mold in the vicinity of the cull portion; a second heat source disposed in the first lower mold; and the upper mold and the lower mold. and an externally at least one protrusion into the product portion, said second upper and said second lower , The Ri Do material excellent heat insulating property than the first upper and the first lower die, wherein the protruding portion is towards the outer side of the product portion is made of a material excellent thermal insulating properties Is.

第1上型と第2上型との間および第1下型と第2下型との間には、間隙による断熱層を設けたことを特徴とする請求項1に記載の半導体装置封止用金型。   2. The semiconductor device sealing according to claim 1, wherein a heat insulating layer is provided between the first upper mold and the second upper mold and between the first lower mold and the second lower mold. Mold.

上金型および下金型の少なくとも一方に外部から製品部への突き出し部を設け、
突き出し部は、製品部側よりも外部側の方が断熱性が優れた材料からなることを特徴とする請求項1または請求項2に記載の半導体装置封止用金型。
Protruding part from the outside to the product part is provided in at least one of the upper mold and the lower mold,
3. The mold for sealing a semiconductor device according to claim 1, wherein the protruding portion is made of a material having better heat insulation on the outer side than on the product portion side.

請求項1から請求項3のいずれか1項に記載の半導体装置封止用金型を用いて製造されたことを特徴とする半導体装置。   A semiconductor device manufactured using the mold for sealing a semiconductor device according to any one of claims 1 to 3.

この発明によれば、第1上型および第1上型を覆う第2上型で構成される上金型と、第1下型および第1下型を覆う第2下型で構成される下金型と、第2下型に設けられ封止樹脂材料のタブレットを投入するポット部と、ポット部内を進退動自在に配置されたプランジャと、半導体素子を封止樹脂材料でトランスファ成形する製品部と、プランジャの軸上に配置され、充填される封止樹脂材料の体積を調整するカル部と、製品部およびカル部を繋ぐゲート部とを備えた半導体装置封止用金型であって、カル部の近傍で第1上型に配置される第1の熱源と、製品部に対して水平方向または鉛直方向に覆うように第1の熱源から離れて第1下型に配置される第2の熱源とを備え、第2上型および第2下型は、第1上型および第1下型よりも断熱性が優れた材料からなる半導体装置封止用金型なので、金型全体を短時間で昇温でき、金型外部への熱の逃げを抑制し、金型内において硬化挙動のばらつきを小さくできる。   According to this invention, the upper mold composed of the first upper mold and the second upper mold covering the first upper mold, and the lower mold composed of the second lower mold covering the first lower mold and the first lower mold. Product part for transfer molding a semiconductor element with a sealing resin material, a pot part that is provided in the second lower mold and into which a tablet of sealing resin material is placed, a plunger that is disposed so as to be movable back and forth in the pot part And a mold for semiconductor device sealing that includes a cull part that adjusts the volume of the sealing resin material that is disposed on the axis of the plunger and a gate part that connects the product part and the cull part, A first heat source disposed in the first upper mold in the vicinity of the cull part and a second heat element disposed in the first lower mold so as to cover the product part in the horizontal direction or the vertical direction so as to cover the product part. The second upper mold and the second lower mold are more thermally insulating than the first upper mold and the first lower mold. Since semiconductor device sealed mold made of a material excellent, can warm a short time the entire mold, to suppress the escape of heat to the mold outside, it is possible to reduce the variation in the curing behavior in the mold.

本発明の実施の形態1による半導体装置封止用金型の斜視図である。It is a perspective view of the metal mold | die for semiconductor device sealing by Embodiment 1 of this invention. 本発明の実施の形態1による半導体装置封止用金型の金型中央部断面図である。1 is a cross-sectional view of a mold center part of a mold for sealing a semiconductor device according to a first embodiment of the present invention. 本発明の実施の形態1による半導体装置封止用金型の突き出し装置配置部の断面図である。It is sectional drawing of the protrusion apparatus arrangement | positioning part of the metal mold | die for semiconductor device sealing by Embodiment 1 of this invention. 本発明の実施の形態1による半導体装置封止用金型の半導体装置の中央部断面図である。1 is a cross-sectional view of a central portion of a semiconductor device of a mold for sealing a semiconductor device according to a first embodiment of the present invention. 本発明の実施の形態1の半導体装置封止用金型における熱の流れを示す図である。It is a figure which shows the flow of the heat | fever in the metal mold | die for semiconductor device sealing of Embodiment 1 of this invention. 本発明の実施の形態1による第2金型の構成例を示す図である。It is a figure which shows the structural example of the 2nd metal mold | die by Embodiment 1 of this invention.

実施の形態1.
図1は、本発明の実施の形態1による半導体装置封止用金型の斜視図である。また、図2、図3、図4は、本発明の実施の形態1による半導体装置封止用金型の断面図である。より具体的には、図2は図1のA−A断面図であり、半導体装置封止用金型の金型中央部断面図である。また、図3は図1のB−B断面図であり、半導体装置封止用金型の突き出し装置配置部の断面図である。さらに、図4は図1のC−C断面図であり、半導体装置封止用金型の半導体装置の中央部断面図である。なお、図1は、製品部35が4個あるバッチタイプの上下の金型10,20を示している。
Embodiment 1 FIG.
FIG. 1 is a perspective view of a mold for sealing a semiconductor device according to Embodiment 1 of the present invention. 2, FIG. 3, and FIG. 4 are cross-sectional views of the mold for sealing a semiconductor device according to the first embodiment of the present invention. More specifically, FIG. 2 is a cross-sectional view taken along the line AA of FIG. FIG. 3 is a cross-sectional view taken along the line BB of FIG. 4 is a cross-sectional view taken along the line CC of FIG. 1 and is a cross-sectional view of the central portion of the semiconductor device of the mold for sealing the semiconductor device. FIG. 1 shows the upper and lower molds 10 and 20 of a batch type having four product parts 35.

半導体装置封止用金型は、主要な構成物として、上金型10、下金型20、ポット部30、プランジャ31、熱源32から構成されている。半導体装置封止時は上金型10と下金型20の間に半導体素子が実装された被封止材料が配置され、ポット部30に封止樹脂材料34が投入された後、上金型10と下金型20が型閉じ状態においてポット部30と製品部35を繋ぐカル部36が形成され、プランジャ31によりポット部30内の封止樹脂材料34が押し出されて製品部35、すなわち半導体装置に充填されて、製品部35の内部に配置された被封止材料が封止される。   The semiconductor device sealing mold includes an upper mold 10, a lower mold 20, a pot portion 30, a plunger 31, and a heat source 32 as main components. At the time of sealing the semiconductor device, a material to be sealed on which a semiconductor element is mounted is disposed between the upper mold 10 and the lower mold 20, and after the sealing resin material 34 is put into the pot portion 30, the upper mold When the mold 10 and the lower mold 20 are closed, a cull portion 36 that connects the pot portion 30 and the product portion 35 is formed, and the plunger 31 pushes the sealing resin material 34 in the pot portion 30 so that the product portion 35, that is, the semiconductor The material to be sealed, which is filled in the apparatus and disposed inside the product portion 35, is sealed.

この半導体装置封止用金型の上金型10及び下金型20は、製品部35及びカル部36を含む第1上型11、製品部35、カル部36及びポット部30を含む第1下型21、第1上型11及び第1下型21の底面部にそれぞれ重ねられる第2上型12、第2下型22に分割されている。   The upper mold 10 and the lower mold 20 of the semiconductor device sealing mold include a first upper mold 11 including a product part 35 and a cull part 36, a first part including a product part 35, a cull part 36, and a pot part 30. The lower mold 21, the first upper mold 11, and the first lower mold 21 are divided into a second upper mold 12 and a second lower mold 22 that are overlaid on the bottom surface portions, respectively.

第1上型11及び第1下型21は熱源32から投入された熱量を効率よく伝えるため、熱伝導性に優れる材料から構成する。熱伝導性に優れる材料を用いることで、熱が伝導する金型断面積を小さくすることができ、その結果として第1金型を構成する第1上型11及び第1下型21を薄肉化できる。第1金型の厚みは、成形時の樹脂圧による変形、損傷が起こらない範囲で可能な限り薄くする方が好ましい。金型薄肉化に伴い金型小型化が達成され、金型製造コストの低減にも繋がる。   The first upper mold 11 and the first lower mold 21 are made of a material having excellent thermal conductivity in order to efficiently transmit the amount of heat input from the heat source 32. By using a material having excellent thermal conductivity, the cross-sectional area of the mold through which heat is conducted can be reduced, and as a result, the first upper mold 11 and the first lower mold 21 constituting the first mold are thinned. it can. The thickness of the first mold is preferably as thin as possible as long as deformation and damage due to resin pressure during molding do not occur. As the mold is thinned, mold miniaturization is achieved, leading to a reduction in mold manufacturing costs.

第1金型を構成する熱伝導性に優れる材料としては、鉄鋼系材料のほか、銅やアルミニウム、これらの合金、カーボン、炭素繊維含浸複合材料、その他の金属材料等やSiC、AlN、BN等のセラミックス材料の表面に封孔処理を施したものがこれに当たる。   Examples of materials having excellent thermal conductivity that constitute the first mold include steel materials, copper and aluminum, alloys thereof, carbon, carbon fiber-impregnated composite materials, other metal materials, SiC, AlN, BN, etc. This is the result of sealing the surface of the ceramic material.

この構成により、金型の加熱体積を局所的に限定できるため、第1金型内に配置した熱源32から投入された熱量を金型全体に伝導して、金型を迅速に昇温できる。   With this configuration, since the heating volume of the mold can be locally limited, the amount of heat input from the heat source 32 disposed in the first mold can be conducted to the entire mold, and the mold can be quickly heated.

また、薄肉化した第1金型を一般的な金型材料に用いられる鉄鋼材料に比べて、低弾性率材料から構成することが好ましい。低い弾性率を有する材料で金型を製造することにより、成形時の樹脂圧による第1金型の変形量の割合は大きくなるが、第1金型の厚みを薄くすることでひずみ量を低減できるため、繰り返しひずみによる金型の耐久性を確保できる。   Moreover, it is preferable to comprise the 1st metal mold | die thinned from the low elastic modulus material compared with the steel material used for a general metal mold | die material. By manufacturing the mold with a material having a low elastic modulus, the ratio of the deformation amount of the first mold due to the resin pressure during molding increases, but the strain amount is reduced by reducing the thickness of the first mold. Therefore, the durability of the mold due to repeated strain can be secured.

上金型10及び下金型20全体を成形温度まで加熱するために、第1金型の中央部であるカル部36の直上に配置された熱源32の熱が水平方向に移動するように、第1金型を熱源32の水平方向を覆うように形成し、また、型閉じした際に上金型10及び下金型20の第1金型同士(11,21)が接触することで熱が移動できるような平面を形成し、ポット部30の外周面を上型または下型の第1金型が覆うことで、ポット部30に投入された封止樹脂材料をカル部36の直上に配置した熱源32により加熱することができる。さらに、第1金型のカル部36の直上の熱源32を配置しない側の上型または下型で、カル部36の直上の熱源32から離れた製品部の水平及び鉛直方向を覆うように加熱する熱源を配置し、金型全体に熱が伝わるように熱源を配置する。   In order to heat the entire upper mold 10 and lower mold 20 to the molding temperature, the heat of the heat source 32 disposed immediately above the cull part 36, which is the central part of the first mold, is moved in the horizontal direction. The first mold is formed so as to cover the horizontal direction of the heat source 32, and when the mold is closed, the first molds (11, 21) of the upper mold 10 and the lower mold 20 are in contact with each other. Is formed so that the outer peripheral surface of the pot portion 30 is covered with the first mold of the upper die or the lower die, so that the sealing resin material put into the pot portion 30 is directly above the cull portion 36. It can heat with the heat source 32 arrange | positioned. Further, the upper die or the lower die on the side where the heat source 32 directly above the cull portion 36 of the first mold is not disposed is heated so as to cover the horizontal and vertical directions of the product portion away from the heat source 32 directly above the cull portion 36. A heat source is arranged so that heat is transmitted to the entire mold.

第1上型11及び第1下型21に配置された熱源32は、抵抗発熱によるヒーターのほか、水や油による温調真空配管、コイルによる誘導加熱のいずれでも良く、これらを併用した機構で構成されていても良い。   The heat source 32 disposed in the first upper mold 11 and the first lower mold 21 may be either a heater by resistance heat generation, a temperature control vacuum pipe by water or oil, or induction heating by a coil, and a mechanism using both of them. It may be configured.

熱源32を有して、熱伝導性に優れる材料から構成される第1上型11及び第1下型21の底面部にそれぞれ重ねられる第2上型12及び第2下型22は、高強度且つ断熱性能に優れる材料から構成されることが好ましい。例えば、MgO、SiO2、Al23の2つ以上から構成される化合物やZrO2等の多孔質セラミックス材料、PEEK(ポリエーテルエーテルケトン)やPPS(ポリフェニレンサルファイド樹脂)等のプラスチック材料、ガラス材料等がこれに当たる。この構成により、第1金型に投入された熱量が金型外部に放出されるのを抑制できるため、型開時においても金型温度の変動を抑制し、低消費電力で効率よく成形を繰り返しおこなえる。 The second upper mold 12 and the second lower mold 22 that are superposed on the bottom surfaces of the first upper mold 11 and the first lower mold 21, each having a heat source 32 and made of a material having excellent heat conductivity, have high strength. Further, it is preferable to be made of a material having excellent heat insulation performance. For example, compounds composed of two or more of MgO, SiO 2 and Al 2 O 3 , porous ceramic materials such as ZrO 2 , plastic materials such as PEEK (polyether ether ketone) and PPS (polyphenylene sulfide resin), glass This is true for materials. With this configuration, it is possible to suppress the amount of heat input to the first mold from being released to the outside of the mold. Therefore, even when the mold is opened, fluctuations in the mold temperature are suppressed, and molding is repeated efficiently with low power consumption. You can do it.

図5は、本発明の実施の形態1の半導体装置封止用金型における熱の流れを示す図である。より具体的には、図1のB−B断面図であり、半導体装置封止用金型の突き出し装置配置部の断面図であり、図3に相当する図であるが、熱源32からの熱の流れを説明するために、部品番号の記載を省略した図である。黒丸で示される熱源32から矢印で示される方向に熱が伝達されることを模式図で示している。   FIG. 5 is a diagram showing a heat flow in the semiconductor device sealing mold according to the first embodiment of the present invention. More specifically, it is a cross-sectional view taken along the line B-B in FIG. 1, a cross-sectional view of a protruding device arrangement portion of a semiconductor device sealing mold, and a view corresponding to FIG. 3. In order to explain the flow of FIG. The schematic diagram shows that heat is transferred from the heat source 32 indicated by the black circle in the direction indicated by the arrow.

第2上型12及び第2下型22は、ブロック状の断熱材料から第1上型11及び第1下型21の体積分を繰り抜いて加工しても良いし、板状の断熱材を複数枚重ね合わせたものをボルト等で固定しても良い。図6は第2金型の構成例を示す図である。2枚の板状断熱材(断熱材A)の間に中央を所定の形状、すなわち、第1上型11及び第1下型21より若干大きな形状を繰り抜いた断熱材(断熱材B)を介在させることで固体断熱材料よりも断熱性能に優れる空気の断熱層を形成し、より断熱効果を高めても良い。2枚の板状断熱材(断熱材A)及び断熱材(断熱材B)の固定は、ボルトなどで固定することができる。   The second upper mold 12 and the second lower mold 22 may be processed by pulling out the volume of the first upper mold 11 and the first lower mold 21 from a block-shaped heat insulating material, or a plate-shaped heat insulating material. A plurality of stacked sheets may be fixed with bolts or the like. FIG. 6 is a diagram showing a configuration example of the second mold. A heat insulating material (heat insulating material B) obtained by pulling out a predetermined shape in the center between two plate-shaped heat insulating materials (heat insulating material A), that is, a shape slightly larger than the first upper mold 11 and the first lower mold 21. By interposing, a heat insulation layer of air having better heat insulation performance than the solid heat insulation material may be formed, and the heat insulation effect may be further enhanced. The two plate-like heat insulating materials (the heat insulating material A) and the heat insulating material (the heat insulating material B) can be fixed with bolts or the like.

すなわち、熱伝導性に優れる材料から構成され、第1上型11及び第1下型21の外面に接触し、上型または下型と対向する面以外を覆うように形成された断熱性が優れる材料から構成される第2上型12及び第2下型22において、2枚の板状断熱材の間に、中央を任意の形状に繰り抜いた板状断熱材を挟み込み、形状の異なる板状の断熱材料を複数枚重ねたものをボルトなどで固定して第2上型12及び第2下型22とすることができる。   That is, it is made of a material having excellent heat conductivity, and is excellent in heat insulation formed so as to be in contact with the outer surfaces of the first upper mold 11 and the first lower mold 21 and to cover the surfaces other than the surface facing the upper mold or the lower mold. In the second upper mold 12 and the second lower mold 22 made of materials, a plate-shaped heat insulating material with the center pulled out in an arbitrary shape is sandwiched between two plate-shaped heat insulating materials, and the plate shapes having different shapes The second upper mold 12 and the second lower mold 22 can be formed by fixing a plurality of stacked heat insulating materials with bolts or the like.

このようにすることで、第1上型11と第2上型12との間および第1下型21と第2下型22との間には、間隙による断熱層を設けられる。2枚の板状断熱材の間に固体よりも断熱性に優れる空気の断熱層を形成することにより、第1上型11及び第1下型21に投入された熱の金型外部への逃げを抑制することができるため、型開時においても金型温度の変動を抑制でき、低消費電力で効率よく成形を繰り返しおこなえる。   In this way, a heat insulating layer is provided between the first upper mold 11 and the second upper mold 12 and between the first lower mold 21 and the second lower mold 22. By forming a heat insulation layer of air having better heat insulation than a solid between the two plate-like heat insulation materials, heat escaped into the first upper mold 11 and the first lower mold 21 to the outside of the mold Therefore, even when the mold is opened, fluctuations in the mold temperature can be suppressed, and molding can be repeated efficiently with low power consumption.

封止樹脂材料34を製品部35に充填するゲート部38の形状としては、断面積が小さく表面積が大きいことが好ましく、断面積が一定の場合台形形状が最も望ましい。断面積の小さなゲート部38を封止樹脂材料34が通過する際の流速が大きくなる。封止樹脂材料34が金型表面に沿って流動するとき、接触面において摩擦によるせん断発熱を生じる。せん断発熱により生じる熱量は封止樹脂材料34の流速が大きいほど大きくなる。また、表面積が大きいほどゲート部38を通過する封止樹脂材料34のうち高温部に接触する樹脂体積が大きくなる。上記の効果により、封止樹脂材料34が金型表面から受ける熱量が大きくなり硬化反応が促進される。   The shape of the gate portion 38 that fills the product portion 35 with the sealing resin material 34 is preferably small in cross-sectional area and large in surface area. When the cross-sectional area is constant, a trapezoidal shape is most desirable. The flow rate when the sealing resin material 34 passes through the gate portion 38 having a small cross-sectional area is increased. When the sealing resin material 34 flows along the mold surface, shear heat generation due to friction occurs at the contact surface. The amount of heat generated by shear heat generation increases as the flow rate of the sealing resin material 34 increases. Further, the larger the surface area, the larger the resin volume that contacts the high temperature portion of the sealing resin material 34 that passes through the gate portion 38. Due to the above effect, the amount of heat received by the sealing resin material 34 from the mold surface is increased and the curing reaction is promoted.

半導体装置封止時において、プランジャ31により金型内に押し出された封止樹脂材料34を効率よく金型全体に充填するために、金型内に残留している空気を真空排気路39により排気する。真空排気路39は、金型内において封止樹脂材料34が最後に充填される製品部35のゲート部38と連通するように設けることが好ましい。金型内の残留空気を効率よく排気することで、溶融した封止樹脂材料34の流動性が向上する。この効果として、封止樹脂材料34の充填時間を短縮できると共に、未充填、ボイド等の成形不良抑制が期待できる。   When the semiconductor device is sealed, the air remaining in the mold is exhausted by the vacuum exhaust passage 39 in order to efficiently fill the entire mold with the sealing resin material 34 pushed into the mold by the plunger 31. To do. The vacuum exhaust passage 39 is preferably provided so as to communicate with the gate portion 38 of the product portion 35 that is finally filled with the sealing resin material 34 in the mold. By efficiently exhausting the residual air in the mold, the fluidity of the molten sealing resin material 34 is improved. As this effect, the filling time of the sealing resin material 34 can be shortened and molding defects such as unfilled and voids can be suppressed.

金型内の残留空気の排気は真空排気路39によるほか、製品部35及びカル部36に設けられたガスベント40によってもおこなう。ガスベント40を効率よく機能させるためには、溶融した封止樹脂材料34のガスベント40への流入を抑制しつつ、金型内の残留空気のみをガスベント40へ流入することが求められる。このため、ガスベント40の形状としても断面積が小さく表面積が大きい台形形状が好ましい。断面積が小さいガスベント40は、入り口部における圧力損失が大きいために高粘度流体が侵入しにくくなる。また、万が一封止樹脂材料34がガスベント40の内部に流入したとしても、表面積を大きくすることで入り口近傍において流入樹脂を硬化させ、これ以上の樹脂の流入を抑制する。   Residual air in the mold is exhausted not only by the vacuum exhaust path 39 but also by the gas vent 40 provided in the product part 35 and the cull part 36. In order for the gas vent 40 to function efficiently, it is required that only the residual air in the mold flows into the gas vent 40 while suppressing the inflow of the molten sealing resin material 34 into the gas vent 40. For this reason, the shape of the gas vent 40 is preferably a trapezoidal shape having a small cross-sectional area and a large surface area. Since the gas vent 40 having a small cross-sectional area has a large pressure loss at the inlet, it is difficult for a high-viscosity fluid to enter. Even if the sealing resin material 34 flows into the gas vent 40, the inflowing resin is cured in the vicinity of the entrance by increasing the surface area, and further inflow of the resin is suppressed.

金型内の残留空気は、封止樹脂材料34が金型内に充填される際に溶融樹脂の流頭先端で押し出される。しかしながら、カル部36から製品部35に流入する場所や、製品部35の内部において封止樹脂材料34の流れ方向が変化する場所において、溶融樹脂の流頭を流れていた空気が残留しやすくなる。このため、ガスベント40の配置場所としては封止樹脂材料34の流れ方向が変わる箇所に設けることが好ましく、製品部35及びカル部36の4隅に設けるのが良い。さらに、製品部35に配置されたゲート部38の対辺側にガスベント40を設けても良い。   Residual air in the mold is pushed out at the front end of the molten resin when the sealing resin material 34 is filled in the mold. However, the air that has flowed through the flow of the molten resin tends to remain in places where the cull portion 36 flows into the product portion 35 and where the flow direction of the sealing resin material 34 changes inside the product portion 35. . For this reason, it is preferable to provide the gas vent 40 at a location where the flow direction of the sealing resin material 34 changes, and it is preferable to provide it at the four corners of the product portion 35 and the cull portion 36. Further, a gas vent 40 may be provided on the opposite side of the gate portion 38 disposed in the product portion 35.

本金型は、製品部35及びカル部36に充填された後、一定時間保持後に硬化した封止樹脂材料34を上金型10及び下金型20から離型することを目的とする突き出し装置(突き出し部)を有する。突き出し装置としてはピンやスリーブ、プレート、リング等のいずれの方式でも良く、また、これらの突き出し方式の補助として、空圧を利用した突き出し装置であっても良い。本実施の形態ではエジェクタピン41によるピン突き出し方式を説明する。エジェクタピン41は、従来用いられる高速度工具鋼等の熱伝導性に優れた材料から構成されることが好ましい。半導体装置を離型する際に金型内部を進行するエジェクタピン41において、封止樹脂材料34を硬化保持する際に第2金型に配置されたエジェクタピン41表面の一部又は全部を熱伝導率の小さな材料で被覆する。   The present mold is an ejecting apparatus for releasing the sealing resin material 34, which is filled after the product part 35 and the cull part 36 and is held for a predetermined time, from the upper mold 10 and the lower mold 20 (Projecting part). As the ejecting device, any method such as a pin, a sleeve, a plate, and a ring may be used, and an ejecting device using air pressure may be used as an auxiliary to these ejecting methods. In the present embodiment, a pin protrusion method using the ejector pins 41 will be described. The ejector pin 41 is preferably made of a material having excellent thermal conductivity, such as a conventionally used high-speed tool steel. In the ejector pin 41 that travels inside the mold when the semiconductor device is released, part or all of the surface of the ejector pin 41 disposed in the second mold is thermally conducted when the sealing resin material 34 is cured and held. Cover with a low-rate material.

この構成により、エジェクタピン41を介して金型外部へ逃げる熱量を抑制できるため、常時金型温度を高温で保持することが可能となり、効率よく繰り返し成形をおこなえる。エジェクタピン41の被覆方法としては、エジェクタピン41を構成する金属材料の外側に熱伝導率の小さい材料で作製した部品をボルト等で固定しても良いし、溶射やめっき等で薄膜を処理する方法でも良い。また、エジェクタピン41は、下金型20および上金型10の両方ではなく、どちらか一方だけに配置してもよい。エジェクタピン41の表面に配置される部品及び薄膜材料として断熱性能に優れるMgO、SiO2、Al23の2つ以上から構成される化合物やZrO2等の多孔質セラミックス材料、PEEK(ポリエーテルエーテルケトン)やPPS(ポリフェニレンサルファイド樹脂)等のプラスチック材料、ガラス材料、フッ素樹脂等の樹脂材料が好ましい。なお、エジェクタピン41の直径は強度上可能限り小さくした方が良い。同様の処理をコアピン37にも施しても良い。 With this configuration, the amount of heat that escapes to the outside of the mold via the ejector pins 41 can be suppressed, so that the mold temperature can always be maintained at a high temperature, and the molding can be performed efficiently and repeatedly. As a method of covering the ejector pin 41, a part made of a material having low thermal conductivity may be fixed to the outside of the metal material constituting the ejector pin 41 with a bolt, or a thin film is processed by thermal spraying or plating. The method is fine. Further, the ejector pins 41 may be disposed not only in the lower mold 20 and the upper mold 10 but only in one of them. Components arranged on the surface of the ejector pin 41 and a porous ceramic material such as a compound composed of two or more of MgO, SiO 2 , Al 2 O 3 and ZrO 2 which are excellent in heat insulation performance as a thin film material, PEEK (polyether) Plastic materials such as ether ketone) and PPS (polyphenylene sulfide resin), glass materials, and resin materials such as fluororesin are preferable. The diameter of the ejector pin 41 should be as small as possible in terms of strength. A similar process may be performed on the core pin 37.

熱伝導性に優れる材料から構成された第1上型11及び第1下型21に形成された製品部35及びカル部36に、第1上型11及び第1下型21に配置された熱源32により溶融した封止樹脂材料34が充填され、第1上型11及び第1下型21に形成された製品部35及びカル部36に充填した封止樹脂材料34が硬化した後に、硬化した封止樹脂材料34からなる半導体装置を金型から取り出すことを目的として、第1上型11及び第1下型21の少なくとも、いずれか一方を貫通するように備えられた突き出し装置(エジェクタピン41)において、熱伝導性に優れる銅やアルミなどの材料から構成され、製品部35及びカル部36に充填された溶融した封止樹脂材料34を硬化保持する際に、第1上型11及び第1下型21の外部に位置する突き出し装置(エジェクタピン41)表面の一部または全部を、セラミックスなどの熱伝導性の小さな材料で覆っている。このように、上金型10および下金型20の少なくとも一方に外部から製品部への突き出し部を設け、突き出し部は、製品部側よりも外部側の方が断熱性に優れた材料となっている。   A heat source disposed in the first upper mold 11 and the first lower mold 21 in the product section 35 and the cull section 36 formed in the first upper mold 11 and the first lower mold 21 made of a material having excellent thermal conductivity. The sealing resin material 34 melted by 32 is filled and cured after the sealing resin material 34 filled in the product part 35 and the cull part 36 formed in the first upper mold 11 and the first lower mold 21 is cured. For the purpose of taking out the semiconductor device made of the sealing resin material 34 from the mold, an ejector device (ejector pin 41) provided to penetrate at least one of the first upper mold 11 and the first lower mold 21 is used. ), When the molten sealing resin material 34 made of a material such as copper or aluminum having excellent thermal conductivity and filled in the product part 35 and the cull part 36 is cured and held, the first upper mold 11 and the first mold 11 1 Outside the lower mold 21 Some or all of the ejector (ejector pin 41) surface that location, are covered with material having small thermal conductivity such as ceramics. As described above, a protruding portion from the outside to the product portion is provided on at least one of the upper die 10 and the lower die 20, and the protruding portion is a material having better heat insulation on the outer side than on the product portion side. ing.

また、第1上型11及び第1下型21の少なくとも、いずれか一方に設けられた製品部表面にその先端を位置する突き出し装置を熱伝導性に優れる材料で構成することにより、第1上型11及び第1下型21に配置された熱源からの熱を封止樹脂材料34に効率よく行き渡らせることができると共に、その表面の一部を熱伝導率の小さい材料で覆うことにより、突き出し装置の表面を介して金型外部へ逃げる熱量を抑制できるため、常時金型温度を高温で保持することが可能となり、低消費電力で効率よく繰り返し成形をおこなえる。   In addition, by forming a protrusion device having a tip located on the surface of the product portion provided on at least one of the first upper mold 11 and the first lower mold 21 with a material having excellent thermal conductivity, The heat from the heat source arranged in the mold 11 and the first lower mold 21 can be efficiently spread to the sealing resin material 34, and a part of the surface is covered with a material having a low thermal conductivity, so that the protrusion is made. Since the amount of heat that escapes to the outside of the mold through the surface of the apparatus can be suppressed, the mold temperature can always be maintained at a high temperature, and the molding can be performed efficiently and repeatedly with low power consumption.

さらに、半導体装置仕様の変更や金型の摩耗、損傷に伴い金型を起工する際は、熱伝導性に優れる材料から構成される第1金型のみを製作すればよく、金型製造コストの低減が図れる。   In addition, when starting a mold due to changes in semiconductor device specifications, die wear, or damage, it is only necessary to produce the first mold made of a material with excellent thermal conductivity, which reduces the cost of mold production. Reduction can be achieved.

以上のように、半導体素子を実装した基板等の被封止材料を、上下の金型内においてトランスファ成形することによって封止する半導体装置封止用金型において、熱伝導性に優れる銅やアルミなどの材料から構成され、且つ、製品部とカル部を有する第1金型の中央部であるカル部の直上に配置された熱源の熱が水平方向に移動するように、第1金型を熱源の水平方向を覆うように形成し、また、型閉じした際に上型及び下型の第1金型同士が接触することで熱が移動できるような平面を形成し、ポット部外周面を上型または下型の第1金型が覆うことで、ポット部に投入された封止樹脂材料をカル部の直上に配置した熱源により加熱する。また、第1金型のカル部直上の熱源を配置しない側の上型または下型で、カル部直上の熱源から離れた製品部の水平及び鉛直方向を覆うように加熱する熱源を配置し、金型全体に熱が伝わるように熱源を配置する。更に、これらの熱源を有する第1金型を、セラミックスなどの断熱性が優れる材料からなる第2金型で上型または下型と対向する面以外を覆っている。   As described above, in a semiconductor device sealing mold that seals a material to be sealed such as a substrate on which a semiconductor element is mounted by transfer molding in upper and lower molds, copper or aluminum having excellent thermal conductivity The first mold is moved so that the heat of the heat source arranged immediately above the cull part, which is the central part of the first mold having the product part and the cull part, moves in the horizontal direction. A flat surface is formed to cover the horizontal direction of the heat source, and heat can be transferred by contacting the upper and lower first molds when the mold is closed. When the upper mold or the first mold of the lower mold is covered, the sealing resin material put in the pot portion is heated by a heat source arranged just above the cull portion. In addition, in the upper mold or the lower mold on the side where the heat source directly above the cull part of the first mold is not disposed, a heat source for heating is disposed so as to cover the horizontal and vertical directions of the product part away from the heat source directly above the cull part, A heat source is arranged so that heat is transmitted to the entire mold. Further, the first mold having these heat sources is covered with a second mold made of a material having excellent heat insulating properties such as ceramics except for the surface facing the upper mold or the lower mold.

これによって、加熱体積を限定した金型全体を短時間で昇温できると共に、金型表面から金型外部への熱の逃げを抑制し、金型全体を常時高温保持できるため効率よく繰り返し成形が可能である。また、金型全体に熱を行き渡らせるように熱源を配置することで、金型内において硬化挙動のばらつきを小さくできるため、硬化時間の短縮及び硬化収縮に伴うヒケ、反りの低減に効果が期待できる。更に、金型の薄肉化及び小型化により、金型製造コストを削減できる。
すなわち、第1上型および第1上型を覆う第2上型で構成される上金型と、第1下型および第1下型を覆う第2下型で構成される下金型と、第2下型に設けられ封止樹脂材料のタブレットを投入するポット部と、ポット部内を進退動自在に配置されたプランジャと、半導体素子を封止樹脂材料でトランスファ成形する製品部と、プランジャの軸上に配置され、充填される封止樹脂材料の体積を調整するカル部と、製品部およびカル部を繋ぐゲート部とを備えた半導体装置封止用金型であって、カル部の近傍で第1上型に配置される第1の熱源と、製品部に対して水平方向または鉛直方向に覆うように第1の熱源から離れて第1下型に配置される第2の熱源とを備え、第2上型および第2下型は、第1上型および第1下型よりも断熱性が優れた材料からなる半導体装置封止用金型なので、金型全体を短時間で昇温でき、金型外部への熱の逃げを抑制し、金型内において硬化挙動のばらつきを小さくできる。
This makes it possible to raise the temperature of the entire mold with a limited heating volume in a short time, suppress the escape of heat from the mold surface to the outside of the mold, and keep the entire mold constantly at a high temperature, enabling efficient and repeated molding. Is possible. In addition, by disposing the heat source so that the heat is spread throughout the mold, it is possible to reduce the variation in the curing behavior in the mold, so it is expected to be effective in shortening the curing time and reducing sink marks and warpage due to curing shrinkage. it can. Furthermore, the mold manufacturing cost can be reduced by reducing the thickness and size of the mold.
That is, an upper mold constituted by a second upper mold covering the first upper mold and the first upper mold, and a lower mold constituted by a second lower mold covering the first lower mold and the first lower mold, A pot portion provided in the second lower mold for inserting a tablet of the sealing resin material; a plunger disposed so as to be movable back and forth in the pot portion; a product portion for transfer molding of the semiconductor element with the sealing resin material; A mold for sealing a semiconductor device including a cull part that adjusts the volume of a sealing resin material that is disposed on a shaft and a gate part that connects the product part and the cull part, in the vicinity of the cull part The first heat source disposed in the first upper mold and the second heat source disposed in the first lower mold away from the first heat source so as to cover the product portion in the horizontal direction or the vertical direction. The second upper mold and the second lower mold have better heat insulation than the first upper mold and the first lower mold. Since semiconductor device sealed mold made of fees can be heated at a short time the entire mold, to suppress the escape of heat to the mold outside, it is possible to reduce the variation in the curing behavior in the mold.

10 上金型、11 第1上型、12 第2上型、20 下金型、21 第1下型、22 第2下型、30 ポット部、31 プランジャ、32 熱源、34 封止樹脂材料、35 製品部、36 カル部、37 コアピン、38 ゲート部、39 真空排気路、40 ガスベント、41 エジェクタピン。 10 Upper mold, 11 First upper mold, 12 Second upper mold, 20 Lower mold, 21 First lower mold, 22 Second lower mold, 30 Pot part, 31 Plunger, 32 Heat source, 34 Sealing resin material, 35 Product part, 36 Cal part, 37 Core pin, 38 Gate part, 39 Vacuum exhaust path, 40 Gas vent, 41 Ejector pin.

Claims (2)

第1上型および前記第1上型を覆う第2上型で構成される上金型と、
第1下型および前記第1下型を覆う第2下型で構成される下金型と、
前記第2下型に設けられ封止樹脂材料のタブレットを投入するポット部と、
前記ポット部内を進退動自在に配置されたプランジャと、
半導体素子を前記封止樹脂材料でトランスファ成形する製品部と、
前記プランジャの軸上に配置され、充填される前記封止樹脂材料の体積を調整するカル部と、
前記製品部および前記カル部を繋ぐゲート部とを備えた半導体装置封止用金型であって、
前記カル部の近傍で前記第1上型に配置される第1の熱源と、
前記第1下型に配置される第2の熱源と、
前記上金型および前記下金型の少なくとも一方に外部から前記製品部への突き出し部とを備え、
前記第2上型および前記第2下型は、前記第1上型および前記第1下型よりも断熱性が優れた材料からなり、
前記突き出し部は、前記製品部側よりも前記外部側の方が断熱性が優れた材料からなる
ことを特徴とする半導体装置封止用金型。
An upper mold composed of a first upper mold and a second upper mold covering the first upper mold;
A lower mold composed of a first lower mold and a second lower mold covering the first lower mold;
A pot portion that is provided in the second lower mold and into which a tablet of a sealing resin material is charged;
A plunger disposed so as to be movable back and forth in the pot portion;
A product part for transfer molding a semiconductor element with the sealing resin material;
A cull portion that is arranged on the axis of the plunger and adjusts the volume of the sealing resin material to be filled;
A mold for sealing a semiconductor device comprising a gate portion connecting the product portion and the cull portion,
A first heat source disposed in the first upper mold in the vicinity of the cull portion;
A second heat source disposed in the first lower mold;
Providing at least one of the upper mold and the lower mold with a projecting part from the outside to the product part,
Said second upper and said second lower die, Ri Do from the material excellent heat insulating property than the first upper and the first lower die,
The protruding part is made of a material having better heat insulation on the outer side than on the product part side, and is a mold for sealing a semiconductor device.
第1上型と第2上型との間および第1下型と第2下型との間には、間隙による断熱層を設けたことを特徴とする請求項1に記載の半導体装置封止用金型。   2. The semiconductor device sealing according to claim 1, wherein a heat insulating layer is provided between the first upper mold and the second upper mold and between the first lower mold and the second lower mold. Mold.
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