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JP5945187B2 - Substrate processing apparatus and substrate processing method - Google Patents

Substrate processing apparatus and substrate processing method Download PDF

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JP5945187B2
JP5945187B2 JP2012171777A JP2012171777A JP5945187B2 JP 5945187 B2 JP5945187 B2 JP 5945187B2 JP 2012171777 A JP2012171777 A JP 2012171777A JP 2012171777 A JP2012171777 A JP 2012171777A JP 5945187 B2 JP5945187 B2 JP 5945187B2
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substrate
cleaning
holding means
processing
suction force
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JP2014033038A (en
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難波 宏光
宏光 難波
フィトリアント
容一 徳永
容一 徳永
天野 嘉文
嘉文 天野
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Tokyo Electron Ltd
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Description

本発明は、基板を基板保持手段で吸着して保持しながら基板の処理を行う基板処理装置及び基板処理方法に関するものである。   The present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate while adsorbing and holding the substrate by a substrate holding means.

従来より、半導体部品やフラットパネルディスプレイなどを製造する際には、半導体ウエハや液晶基板などの基板に対して基板処理装置を用いて洗浄等の各種の処理を施す。   Conventionally, when manufacturing a semiconductor component, a flat panel display, or the like, various processes such as cleaning are performed on a substrate such as a semiconductor wafer or a liquid crystal substrate using a substrate processing apparatus.

基板処理装置では、基板を基板保持手段で保持した状態で基板の処理を行う。この基板保持手段の一形態として、基板保持手段の上面で基板の裏面を吸着することで基板を保持する構成のものが知られている(たとえば、特許文献1参照。)。   In the substrate processing apparatus, the substrate is processed while the substrate is held by the substrate holding means. As one form of the substrate holding means, there is known a configuration in which the substrate is held by adsorbing the back surface of the substrate on the upper surface of the substrate holding means (see, for example, Patent Document 1).

そして、基板処理装置では、処理する基板を基板保持手段に搬入し、基板保持手段で基板の裏面を吸着して保持し、基板の表面や側面や裏面端縁などを処理する。その後、処理した基板を基板保持手段から搬出し、次に処理する基板を基板保持手段に搬入する。これにより、複数枚の基板を連続して処理する。   In the substrate processing apparatus, the substrate to be processed is carried into the substrate holding means, the back surface of the substrate is sucked and held by the substrate holding means, and the front surface, the side surface, the back surface edge and the like of the substrate are processed. Thereafter, the processed substrate is unloaded from the substrate holding means, and the next substrate to be processed is loaded into the substrate holding means. Thereby, a plurality of substrates are processed continuously.

特開2003−197570号公報JP 2003-197570 A

ところが、上記従来の基板処理装置では、基板の裏面を基板保持手段で吸着して保持するため、基板の裏面に付着していた塵等が基板保持手段に転着しやすい。   However, in the conventional substrate processing apparatus, since the back surface of the substrate is attracted and held by the substrate holding means, dust or the like adhering to the back surface of the substrate is easily transferred to the substrate holding means.

そして、基板保持手段に塵等が転着すると、その塵等が後から処理される基板に付着してしまい、基板保持手段を介して基板間で塵等が転写する、いわゆるクロスコンタミネーションが発生するおそれがある。   When dust or the like is transferred to the substrate holding means, the dust adheres to a substrate to be processed later, and so-called cross contamination occurs in which dust or the like is transferred between the substrates via the substrate holding means. There is a risk.

そこで、本発明では、基板処理装置において、基板又は清掃用基板を吸着して保持する基板保持手段と、前記基板保持手段に設けた基板吸引機構と、前記基板吸引機構の吸引力を制御する制御手段とを有し、前記制御手段は、前記基板を前記基板保持手段に第1の吸引力で吸着保持しながら前記基板の処理を行う通常処理工程と、清掃用基板を前記基板保持手段に第2の吸引力で吸着保持して前記基板保持手段の清掃を行う清掃処理工程とを行い、前記第2の吸引力を前記第1の吸引力よりも大きくすることにより、前記通常処理工程において前記基板を吸着保持して処理を行う際の前記基板と前記基板保持手段との間の密着力よりも、前記清掃処理工程において前記基板とは異なる前記清掃用基板を吸着保持する際の前記清掃用基板と前記基板保持手段との間の密着力を大きくすることにした。
Therefore, in the present invention, in the substrate processing apparatus, the substrate holding means for sucking and holding the substrate or the cleaning substrate, the substrate suction mechanism provided in the substrate holding means, and the control for controlling the suction force of the substrate suction mechanism A normal processing step of processing the substrate while adsorbing and holding the substrate to the substrate holding means with a first suction force; and a cleaning substrate to the substrate holding means. And cleaning the substrate holding means by sucking and holding with a suction force of 2, and making the second suction force larger than the first suction force, the normal processing step . than the adhesion force between the substrate and the substrate holding means when performing the processing suction holds the substrate have, when holding adsorb different the cleaning substrate is a Oite the substrate to the cleaning treatment step the cleaning for the substrate and the of It decided to increase the adhesion between the plate holding means.

また、前記基板保持手段は、板状のプレートと弾性材料からなるリングとを含み、前記リングが前記第1又は第2の吸引力により吸引されるときに弾性変形して前記基板又は前記清掃用基板に密着することにした。
The substrate holding means includes a plate-shaped plate and a ring made of an elastic material, and elastically deforms when the ring is sucked by the first or second suction force, so that the substrate or the cleaning plate is We decided to adhere to the substrate .

また、前記清掃用基板は、前記基板よりも前記基板保持手段に密着しやすい材質又は前記基板よりも重くすることにした。   In addition, the cleaning substrate is made of a material that is more easily adhered to the substrate holding means than the substrate, or heavier than the substrate.

また、前記清掃用基板を洗浄して繰返し使用するための清掃用基板洗浄装置を設けることにした。   Further, a cleaning substrate cleaning apparatus for cleaning the cleaning substrate and repeatedly using it is provided.

また、本発明では、基板処理方法において、基板を基板保持手段に第1の吸引力で吸着保持しながら基板の処理を行う通常処理工程と、清掃用基板を前記基板保持手段に第2の吸引力で吸着保持して前記基板保持手段の清掃を行う清掃処理工程とを有し、前記第2の吸引力を前記第1の吸引力よりも大きくすることにより、前記通常処理工程において前記基板を吸着保持して処理を行う際の前記基板と前記基板保持手段との間の密着力よりも、前記清掃処理工程において前記基板とは異なる前記清掃用基板を吸着保持する際の前記清掃用基板と前記基板保持手段との間の密着力を大きくすることにした。
According to the present invention, in the substrate processing method, a normal processing step of processing the substrate while adsorbing and holding the substrate to the substrate holding means with a first suction force, and a second suction of the cleaning substrate to the substrate holding means. and suction-held with a force and a cleaning process for cleaning of the substrate holding means by the second suction force is greater than the first suction force, Oite the to the normal processing step than the adhesion force between the substrate and the substrate holding means for performing the process the substrate held by suction, the when sucking and holding the different the cleaning substrate is a Oite the substrate to the cleaning treatment step The adhesion between the cleaning substrate and the substrate holding means was increased.

また、前記基板保持手段は、板状のプレートと弾性材料からなるリングとを含み、前記リングが前記第1又は第2の吸引力により吸引されるときに弾性変形して前記基板又は前記清掃用基板に密着することにした。 The substrate holding means includes a plate-shaped plate and a ring made of an elastic material, and elastically deforms when the ring is sucked by the first or second suction force, so that the substrate or the cleaning plate is We decided to adhere to the substrate .

また、前記清掃用基板を前記基板よりも前記基板保持手段に密着しやすい材質又は前記基板よりも重くすることにした。   Further, the cleaning substrate is made of a material that is more easily adhered to the substrate holding means than the substrate or heavier than the substrate.

また、前記清掃用基板を洗浄して繰返し使用することにした。   Further, the cleaning substrate is washed and used repeatedly.

本発明では、基板保持手段を介した基板間でのクロスコンタミネーションの発生を抑制することができる。   In the present invention, occurrence of cross contamination between substrates via the substrate holding means can be suppressed.

基板処理装置を示す平面図。The top view which shows a substrate processing apparatus. 基板処理装置を示す側面断面図。Side surface sectional drawing which shows a substrate processing apparatus. 基板液処理装置を示す側面断面図。Side surface sectional drawing which shows a substrate liquid processing apparatus. 清掃用基板洗浄装置を示す側面断面図。Side surface sectional drawing which shows the board | substrate cleaning apparatus for cleaning. 基板処理装置の動作説明図。Operation | movement explanatory drawing of a substrate processing apparatus.

以下に、本発明に係る基板処理装置及び基板処理方法の具体的な構成について図面を参照しながら説明する。   Hereinafter, specific configurations of a substrate processing apparatus and a substrate processing method according to the present invention will be described with reference to the drawings.

図1及び図2に示すように、基板処理装置1は、前端部に搬入出部2を形成する。搬入出部2には、複数枚(たとえば、25枚)の基板3(ここでは、半導体ウエハ)を収容したキャリア4が搬入及び搬出される。   As shown in FIGS. 1 and 2, the substrate processing apparatus 1 forms a carry-in / out unit 2 at the front end. A carrier 4 containing a plurality of (for example, 25) substrates 3 (here, semiconductor wafers) is carried into and out of the carry-in / out section 2.

また、基板処理装置1は、搬入出部2の後部に搬送部5を形成する。搬送部5は、前側に基板搬送装置6を配置するとともに、後側に基板受渡台7を上下に配置する。各基板受渡台7は、上側に処理前後の基板3を上下に並べて収容する処理用基板収容部7aを形成し、下側にチャック(基板3を吸引する部分)を清掃するための清掃用基板3'(詳細は、後述する。)を収容する清掃用基板収容部7bを形成する。搬送部5では、搬入出部2に載置されたいずれかのキャリア4と基板受渡台7の処理用基板収容部7aとの間で基板搬送装置6を用いて基板3を搬送する。   Further, the substrate processing apparatus 1 forms a transport unit 5 at the rear part of the carry-in / out unit 2. The transfer unit 5 has a substrate transfer device 6 disposed on the front side, and a substrate delivery table 7 disposed on the rear side. Each substrate delivery table 7 has a processing substrate storage portion 7a for storing the substrates 3 before and after processing in the upper and lower sides on the upper side, and a cleaning substrate for cleaning the chuck (portion for sucking the substrate 3) on the lower side. A cleaning substrate housing portion 7b for housing 3 ′ (details will be described later) is formed. In the transport unit 5, the substrate 3 is transported by using the substrate transport device 6 between any of the carriers 4 placed on the carry-in / out unit 2 and the processing substrate storage unit 7 a of the substrate delivery table 7.

また、基板処理装置1は、搬送部5の後部に処理部8を形成する。処理部8は、中央に前後に伸延する基板搬送装置9,9を上下に配置するとともに、各基板搬送装置9の左右両側に基板3を液処理するための基板液処理装置10を前後に並べて配置する。また、処理部8は、後端部に清掃用基板3'を洗浄するための清掃用基板洗浄装置11を配置する。処理部8では、基板受渡台7の処理用基板収容部7aと基板液処理装置10との間で基板搬送装置9を用いて基板3を搬送し、基板液処理装置10を用いて基板3の液処理を行う。また、処理部8では、基板受渡台7の清掃用基板収容部7bと基板液処理装置10との間で基板搬送装置9を用いて清掃用基板3'を搬送し、清掃用基板3'を用いて基板液処理装置10の清掃を行う。さらに、処理部8では、基板液処理装置10と清掃用基板洗浄装置11との間で基板搬送装置9を用いて清掃用基板3'を搬送し、清掃用基板洗浄装置11を用いて清掃用基板3'を洗浄する。なお、処理部8での基板3や清掃用基板3'の搬入出の詳細については後述する。   Further, the substrate processing apparatus 1 forms a processing unit 8 at the rear part of the transport unit 5. The processing unit 8 has substrate transfer devices 9 and 9 extending vertically in the center and vertically arranged substrate liquid processing devices 10 for liquid processing the substrate 3 on the left and right sides of each substrate transfer device 9. Deploy. In addition, the processing unit 8 arranges a cleaning substrate cleaning device 11 for cleaning the cleaning substrate 3 ′ at the rear end. In the processing section 8, the substrate 3 is transported between the processing substrate storage section 7 a of the substrate delivery table 7 and the substrate liquid processing apparatus 10 using the substrate transport apparatus 9, and the substrate 3 is processed using the substrate liquid processing apparatus 10. Liquid treatment is performed. Further, in the processing unit 8, the cleaning substrate 3 ′ is transported between the cleaning substrate storage unit 7 b of the substrate delivery table 7 and the substrate liquid processing apparatus 10 using the substrate transporting device 9, and the cleaning substrate 3 ′ is transported. The substrate liquid processing apparatus 10 is used for cleaning. Further, in the processing section 8, the cleaning substrate 3 ′ is transferred between the substrate liquid processing apparatus 10 and the cleaning substrate cleaning apparatus 11 using the substrate transfer apparatus 9, and the cleaning substrate cleaning apparatus 11 is used for cleaning. The substrate 3 ′ is cleaned. The details of loading and unloading of the substrate 3 and the cleaning substrate 3 ′ in the processing unit 8 will be described later.

なお、以下の説明では、基板液処理装置10として、基板3の端縁部を洗浄液で洗浄する装置を用いているが、これに限られず、基板3を処理する装置であればよく、たとえば、基板3の裏面を洗浄液で洗浄する基板洗浄処理装置や基板3の端縁部をブラシで洗浄する基板洗浄処理装置などであってもよい。また、清掃用基板洗浄装置11として、清掃用基板3'を洗浄する専用の装置を用いているが、これに限られず、清掃用基板3'の裏面を洗浄する装置であればよく、たとえば、基板3の裏面を洗浄する基板洗浄処理装置を兼用してもよい。また、清掃用基板収容部7bは、清掃用基板3'を収容できればよく、基板受渡台7に処理用基板収容部7aとともに設けた場合に限られず、たとえば、処理部8の後端部などに設けてもよい。   In the following description, the substrate liquid processing apparatus 10 is an apparatus that cleans the edge portion of the substrate 3 with a cleaning liquid. However, the present invention is not limited to this, and any apparatus that processes the substrate 3 may be used. It may be a substrate cleaning processing apparatus that cleans the back surface of the substrate 3 with a cleaning liquid, a substrate cleaning processing apparatus that cleans the edge of the substrate 3 with a brush, or the like. Further, as the cleaning substrate cleaning device 11, a dedicated device for cleaning the cleaning substrate 3 ′ is used, but is not limited thereto, and any device that cleans the back surface of the cleaning substrate 3 ′ may be used. A substrate cleaning apparatus for cleaning the back surface of the substrate 3 may also be used. Further, the cleaning substrate housing portion 7b only needs to be able to accommodate the cleaning substrate 3 ′, and is not limited to the case where the cleaning substrate housing portion 7b is provided together with the processing substrate housing portion 7a. It may be provided.

基板液処理装置10は、図3に示すように、基板処理室12に基板保持手段13と洗浄液供給手段14とリンス液供給手段15と排液手段16を設けている。ここで、基板保持手段13は、基板3又は清掃用基板3'の裏面を吸着して保持する。洗浄液供給手段14は、基板3の端縁部に洗浄液(たとえば、SC1)を供給して基板3の洗浄処理を行う。リンス液供給手段15は、基板3の端縁部にリンス液(たとえば、純水)を供給して基板3のリンス処理を行う。排液手段16は、基板3に供給した洗浄液やリンス液を回収して外部に廃棄する。   As shown in FIG. 3, the substrate liquid processing apparatus 10 is provided with a substrate holding means 13, a cleaning liquid supply means 14, a rinse liquid supply means 15, and a drainage means 16 in the substrate processing chamber 12. Here, the substrate holding means 13 sucks and holds the back surface of the substrate 3 or the cleaning substrate 3 ′. The cleaning liquid supply unit 14 supplies a cleaning liquid (for example, SC1) to the edge portion of the substrate 3 to perform the cleaning process on the substrate 3. The rinsing liquid supply means 15 supplies a rinsing liquid (for example, pure water) to the edge of the substrate 3 to perform a rinsing process on the substrate 3. The drainage means 16 collects the cleaning liquid and rinse liquid supplied to the substrate 3 and discards them outside.

基板保持手段13は、基板処理室12の内部に上下に伸延する回転軸17を設けている。回転軸17は、回転軸上に吸気通路18を形成している。吸気通路18の上端開口には、複数の吸気孔19を有する板状のプレート20が取付けられている。プレート20の上面には、ゴム等の弾性材料からなる円環状のリング21が取付けられている。このリング21の上部に基板3又は清掃用基板3'が載置される。また、吸気通路18の下端開口には、基板吸引機構22が連結されている。この基板吸引機構22は、制御手段23によって駆動制御され,吸引力を変更することができる。なお、制御手段23は、基板処理装置1の全体を駆動制御する。   The substrate holding means 13 is provided with a rotating shaft 17 extending vertically in the substrate processing chamber 12. The rotating shaft 17 forms an intake passage 18 on the rotating shaft. A plate-like plate 20 having a plurality of intake holes 19 is attached to the upper end opening of the intake passage 18. An annular ring 21 made of an elastic material such as rubber is attached to the upper surface of the plate 20. A substrate 3 or a cleaning substrate 3 ′ is placed on the ring 21. A substrate suction mechanism 22 is connected to the lower end opening of the intake passage 18. The substrate suction mechanism 22 is driven and controlled by the control means 23 and can change the suction force. The control means 23 controls the drive of the entire substrate processing apparatus 1.

これにより、基板保持手段13は、基板吸引機構22を駆動すると、吸気孔19から吸気し、その吸引力によってリング21の上部に載置された基板3又は清掃用基板3'を吸着して保持する。その際に、基板3又は清掃用基板3'の裏面は、リング21を押し潰し、所定の密着力でリング21の上面に密着する。   Thus, when the substrate suction mechanism 22 is driven, the substrate holding means 13 sucks air from the suction holes 19 and sucks and holds the substrate 3 or the cleaning substrate 3 ′ placed on the ring 21 by the suction force. To do. At that time, the back surface of the substrate 3 or the cleaning substrate 3 ′ crushes the ring 21 and adheres to the upper surface of the ring 21 with a predetermined adhesion force.

なお、基板保持手段13は、上記構成に限られず、基板3又は清掃用基板3'の裏面を所定の密着力(後述するが、基板3の場合の密着力と清掃用基板3'の場合の密着力とは異なる。)で吸着して保持できればよい。たとえば、リング21を設けずに回転軸17の上端面に基板3や清掃用基板3'の裏面を直接載置するようにしてもよい。ここでは、吸着時にリング21が弾性変形することで基板3や清掃用基板3'の裏面に良好に密着させている。   The substrate holding means 13 is not limited to the above-described configuration, and the back surface of the substrate 3 or the cleaning substrate 3 ′ is applied with a predetermined adhesion force (described later, the adhesion force in the case of the substrate 3 and the cleaning substrate 3 ′. It is sufficient if it can be adsorbed and held by a different force. For example, the back surface of the substrate 3 or the cleaning substrate 3 ′ may be directly placed on the upper end surface of the rotating shaft 17 without providing the ring 21. Here, the ring 21 is elastically deformed at the time of suction so that the ring 21 is in good contact with the back surface of the substrate 3 or the cleaning substrate 3 ′.

また、基板保持手段13は、回転軸17に基板回転機構24と基板昇降機構25を接続している。これらの基板回転機構24及び基板昇降機構25は、制御手段23で回転制御及び昇降制御される。   Further, the substrate holding means 13 connects the substrate rotating mechanism 24 and the substrate lifting mechanism 25 to the rotating shaft 17. The substrate rotating mechanism 24 and the substrate lifting mechanism 25 are rotationally controlled and lifted / lowered by the control means 23.

これにより、基板保持手段13は、処理時に基板吸引機構22及び基板回転機構24を駆動することで、基板3又は清掃用基板3'を吸着保持した状態で回転させる。また、処理前後の搬入出時に基板吸引機構22及び基板昇降機構25を駆動することで、基板3又は清掃用基板3'を保持した状態で昇降させる。   As a result, the substrate holding means 13 rotates the substrate 3 or the cleaning substrate 3 ′ while being sucked and held by driving the substrate suction mechanism 22 and the substrate rotating mechanism 24 during processing. Further, by driving the substrate suction mechanism 22 and the substrate lifting mechanism 25 at the time of loading / unloading before and after processing, the substrate 3 or the cleaning substrate 3 ′ is lifted and lowered.

洗浄液供給手段14は、基板処理室12の内部に洗浄液供給ノズル26を設けている。洗浄液供給ノズル26は、先端部に吐出口27を基板3の端縁部に向けて形成するとともに、基端部に洗浄液供給源28を流量調整器29を介して接続している。流量調整器29は、制御手段23によって開閉及び流量制御される。   The cleaning liquid supply means 14 is provided with a cleaning liquid supply nozzle 26 inside the substrate processing chamber 12. In the cleaning liquid supply nozzle 26, a discharge port 27 is formed at the front end portion toward the edge of the substrate 3, and a cleaning liquid supply source 28 is connected to the base end portion via a flow rate regulator 29. The flow regulator 29 is controlled to open and close and flow by the control means 23.

リンス液供給手段15は、基板処理室12の内部にリンス液供給ノズル30を設けている。リンス液供給ノズル30は、先端部に吐出口31を基板3の端縁部に向けて形成するとともに、基端部にリンス液供給源32を流量調整器33を介して接続している。流量調整器33は、制御手段23によって開閉及び流量制御される。   The rinse liquid supply means 15 is provided with a rinse liquid supply nozzle 30 inside the substrate processing chamber 12. The rinsing liquid supply nozzle 30 has a discharge port 31 formed at the distal end thereof toward the end edge of the substrate 3, and a rinsing liquid supply source 32 is connected to the base end via a flow rate regulator 33. The flow regulator 33 is opened and closed and its flow rate is controlled by the control means 23.

排液手段16は、基板3又は清掃用基板3'の外周外方にカップ34を設けている。洗浄液やリンス液は、回転する基板3の遠心力で基板3の外周外方へ振り切られ、カップ34に回収される。カップ34には、回収した洗浄液やリンス液を外部に廃棄するドレインライン35が接続されている。   The drainage means 16 is provided with a cup 34 outside the outer periphery of the substrate 3 or the cleaning substrate 3 ′. The cleaning liquid and the rinsing liquid are shaken off to the outer periphery of the substrate 3 by the centrifugal force of the rotating substrate 3 and collected in the cup 34. The cup 34 is connected to a drain line 35 for discarding the recovered cleaning liquid and rinse liquid to the outside.

基板液処理装置10は、以上に説明した構成となっており、基板吸引機構22を駆動することで、基板3又は清掃用基板3'を吸着して保持する。その際に、基板3と清掃用基板3'とが同等の硬さ(同一の材質・厚さなど)の場合には、基板吸引機構22による吸引力を変えることで、基板3と基板保持手段13との間の密着力と清掃用基板3'と基板保持手段13との間の密着力を変えることができる。また、基板3と清掃用基板3'の材質や厚さなどを変えることで基板保持手段13への密着のしやすさが変わり、同一の吸引力であっても密着力を変えることができる。   The substrate liquid processing apparatus 10 has the configuration described above, and drives the substrate suction mechanism 22 to suck and hold the substrate 3 or the cleaning substrate 3 ′. At that time, if the substrate 3 and the cleaning substrate 3 'have the same hardness (same material, thickness, etc.), the substrate 3 and the substrate holding means are changed by changing the suction force by the substrate suction mechanism 22. The adhesion force between the cleaning substrate 3 ′ and the cleaning substrate 3 ′ and the substrate holding means 13 can be changed. Further, by changing the material and thickness of the substrate 3 and the cleaning substrate 3 ′, the ease of contact with the substrate holding means 13 is changed, and the contact force can be changed even with the same suction force.

清掃用基板洗浄装置11は、図4に示すように、清掃用基板処理室36に清掃用基板保持手段37と洗浄液供給手段38と排液手段39を設けている。ここで、清掃用基板保持手段37は、清掃用基板3'の端縁を保持する。洗浄液供給手段38は、清掃用基板3'の表面及び裏面に洗浄液(たとえば、純水)を供給して清掃用基板3'の洗浄処理を行う。排液手段39は、清掃用基板3'に供給した洗浄液を回収して外部に廃棄する。   As shown in FIG. 4, the cleaning substrate cleaning apparatus 11 is provided with a cleaning substrate holding means 37, a cleaning liquid supply means 38, and a drainage means 39 in the cleaning substrate processing chamber 36. Here, the cleaning substrate holding means 37 holds the edge of the cleaning substrate 3 ′. The cleaning liquid supply means 38 supplies a cleaning liquid (for example, pure water) to the front and back surfaces of the cleaning substrate 3 ′ to perform the cleaning process on the cleaning substrate 3 ′. The drainage means 39 collects the cleaning liquid supplied to the cleaning substrate 3 ′ and discards it outside.

なお、以下の説明では、清掃用基板洗浄装置11として、清掃用基板3'の表裏両面を洗浄する装置について説明するが、清掃用基板3'の裏面のみを洗浄する装置を用いてもよい。清掃用基板3'の洗浄面(裏面)を上方に向けた状態で洗浄面に洗浄液を供給する場合には、清掃用基板3'の表裏を反転させる反転機構が必要となる。   In the following description, an apparatus for cleaning both the front and back surfaces of the cleaning substrate 3 ′ will be described as the cleaning substrate cleaning apparatus 11. However, an apparatus for cleaning only the back surface of the cleaning substrate 3 ′ may be used. When supplying the cleaning liquid to the cleaning surface with the cleaning surface (back surface) of the cleaning substrate 3 ′ facing upward, a reversing mechanism that reverses the front and back of the cleaning substrate 3 ′ is required.

清掃用基板保持手段37は、清掃用基板処理室36の内部に上下に伸延する回転軸40を設けている。回転軸40の上端部には、円板状のターンテーブル41が取付けられている。ターンテーブル41の外周部には、保持体42が円周方向に間隔をあけて取付けられている。この保持体42の上部に清掃用基板3'が載置される。また、回転軸40には、回転機構43と昇降機構44が接続されている。これらの回転機構43及び昇降機構44は、制御手段23で回転制御及び昇降制御される。これにより、清掃用基板保持手段37は、洗浄処理時に回転機構43を駆動することで、清掃用基板3'を保持した状態で回転させる。また、洗浄処理前後の搬入出時に昇降機構44を駆動することで、清掃用基板3'を保持した状態で昇降させる。   The cleaning substrate holding means 37 is provided with a rotating shaft 40 extending vertically in the cleaning substrate processing chamber 36. A disc-shaped turntable 41 is attached to the upper end portion of the rotating shaft 40. A holding body 42 is attached to the outer periphery of the turntable 41 at intervals in the circumferential direction. A cleaning substrate 3 ′ is placed on top of the holding body 42. A rotating mechanism 43 and a lifting mechanism 44 are connected to the rotating shaft 40. The rotation mechanism 43 and the lifting mechanism 44 are rotationally controlled and lifted / lowered by the control means 23. Thereby, the cleaning substrate holding means 37 rotates the cleaning substrate 3 ′ while holding the cleaning substrate 3 ′ by driving the rotation mechanism 43 during the cleaning process. Further, by driving the elevating mechanism 44 at the time of carrying in / out before and after the cleaning process, the elevating mechanism 44 is moved up and down while holding the cleaning substrate 3 ′.

洗浄液供給手段38は、清掃用基板処理室36の内部に洗浄液供給ノズル45を設けている。洗浄液供給ノズル45は、先端部に吐出口46を清掃用基板3'の表面の中心部に向けて形成するとともに、基端部に洗浄液供給源47を流量調整器48を介して接続している。流量調整器48は、制御手段23によって開閉及び流量制御される。   The cleaning liquid supply means 38 is provided with a cleaning liquid supply nozzle 45 inside the cleaning substrate processing chamber 36. The cleaning liquid supply nozzle 45 has a discharge port 46 formed at the front end portion toward the center of the surface of the cleaning substrate 3 ′, and a cleaning liquid supply source 47 is connected to the base end portion via a flow rate regulator 48. . The flow rate regulator 48 is controlled to open and close and flow rate is controlled by the control means 23.

また、洗浄液供給手段38は、清掃用基板保持手段37の回転軸40及びターンテーブル41の中心軸上に洗浄液供給ノズル52を形成している。洗浄液供給ノズル52は、ターンテーブル41の中央に吐出口53を清掃用基板3'の裏面の中心部に向けて形成するとともに、回転軸40の中央に上下に伸延する連通孔54を形成している。連通孔54には、洗浄液供給源47を流量調整器55を介して接続している。流量調整器55は、制御手段23によって開閉及び流量制御される。   Further, the cleaning liquid supply means 38 forms a cleaning liquid supply nozzle 52 on the rotation shaft 40 of the cleaning substrate holding means 37 and the central axis of the turntable 41. The cleaning liquid supply nozzle 52 has a discharge port 53 formed in the center of the turntable 41 toward the center of the back surface of the cleaning substrate 3 ′ and a communication hole 54 extending vertically in the center of the rotating shaft 40. Yes. A cleaning liquid supply source 47 is connected to the communication hole 54 via a flow rate regulator 55. The flow rate regulator 55 is opened / closed and flow rate controlled by the control means 23.

排液手段39は、清掃用基板3'の外周外方にカップ49を設けている。洗浄液は、回転する清掃用基板3'の遠心力で清掃用基板3'の外周外方へ振り切られ、カップ49に回収される。カップ49には、回収した洗浄液を外部に廃棄するドレインライン50が接続されている。   The drainage means 39 is provided with a cup 49 outside the outer periphery of the cleaning substrate 3 ′. The cleaning liquid is spun off to the outer periphery of the cleaning substrate 3 ′ by the centrifugal force of the rotating cleaning substrate 3 ′ and collected in the cup 49. The cup 49 is connected to a drain line 50 for discarding the recovered cleaning liquid to the outside.

基板処理装置1は、以上に説明したように構成しており、制御手段23(コンピュータ)で読み取り可能な記録媒体51に記録した基板処理プログラムにしたがって基板3を処理する(図5参照。)。なお、基板3は、処理前にキャリア4から基板受渡台7の処理用基板収容部7aに搬送され、処理後に処理用基板収容部7aからキャリア4に搬送される。また、基板3の処理の途中において使用する清掃用基板3'は、予め清掃用基板収容部7bに収容されている。   The substrate processing apparatus 1 is configured as described above, and processes the substrate 3 according to the substrate processing program recorded on the recording medium 51 readable by the control means 23 (computer) (see FIG. 5). The substrate 3 is transported from the carrier 4 to the processing substrate housing portion 7a of the substrate delivery table 7 before processing, and is transported from the processing substrate housing portion 7a to the carrier 4 after processing. The cleaning substrate 3 ′ used during the processing of the substrate 3 is previously stored in the cleaning substrate storage portion 7b.

まず、基板処理装置1は、基板搬送装置9を用いて基板3を処理用基板収容部7aから基板液処理装置10に搬入する。   First, the substrate processing apparatus 1 carries the substrate 3 into the substrate liquid processing apparatus 10 from the processing substrate container 7a using the substrate transfer apparatus 9.

基板液処理装置10では、基板3を洗浄処理する通常処理工程を実行する。この通常処理工程では、基板保持手段13を用いて基板3を保持する。その際に、基板吸引機構22を駆動して、吸引力によってリング21の上部に基板3の裏面を所定の密着力で吸着する。これにより、基板3の裏面に塵等が付着していた場合には、基板3と基板保持手段13との間の密着力によって塵等が基板3の裏面から基板保持手段13(リング21)に転着される。その後、基板回転機構24によって基板3を回転させ、洗浄液供給手段14によって基板3の端縁部に洗浄液を一定時間供給して基板3の洗浄処理を行う。その後、リンス液供給手段15によって基板3の端縁部にリンス液を一定時間供給して基板3のリンス処理を行う。その後、基板回転機構24によって基板3を一定時間回転して基板3の表面からリンス液を振り切って乾燥処理を行う。   In the substrate liquid processing apparatus 10, a normal processing process for cleaning the substrate 3 is executed. In this normal processing step, the substrate 3 is held using the substrate holding means 13. At that time, the substrate suction mechanism 22 is driven to attract the back surface of the substrate 3 to the upper portion of the ring 21 with a predetermined adhesion force by the suction force. As a result, when dust or the like adheres to the back surface of the substrate 3, the dust or the like adheres from the back surface of the substrate 3 to the substrate holding means 13 (ring 21) due to the adhesion between the substrate 3 and the substrate holding means 13. Transferred. Thereafter, the substrate 3 is rotated by the substrate rotating mechanism 24, and the cleaning liquid is supplied to the edge portion of the substrate 3 by the cleaning liquid supply means 14 for a predetermined time to perform the cleaning process of the substrate 3. Thereafter, the rinsing liquid is supplied to the edge portion of the substrate 3 by the rinsing liquid supply means 15 for a predetermined time to perform the rinsing process on the substrate 3. Thereafter, the substrate 3 is rotated for a predetermined time by the substrate rotating mechanism 24, and the rinsing liquid is spun off from the surface of the substrate 3 to perform a drying process.

次に、基板処理装置1は、基板搬送装置9を用いて基板3を基板液処理装置10から処理用基板収容部7aに搬出する。   Next, the substrate processing apparatus 1 unloads the substrate 3 from the substrate liquid processing apparatus 10 to the processing substrate accommodating portion 7a using the substrate transfer apparatus 9.

次に、基板処理装置1は、基板搬送装置9を用いて清掃用基板3'を清掃用基板収容部7bから基板液処理装置10に搬入する。   Next, the substrate processing apparatus 1 carries the cleaning substrate 3 ′ into the substrate liquid processing apparatus 10 from the cleaning substrate housing portion 7 b using the substrate transfer device 9.

基板液処理装置10では、清掃用基板3'で基板保持手段13を清掃処理する清掃処理工程を実行する。この清掃処理工程では、基板保持手段13を用いて清掃用基板3'を保持する。その際に、基板吸引機構22を駆動して、吸引力によってリング21の上部に清掃用基板3'の裏面(清掃面)を所定の密着力で吸着する。ここで、先の通常処理工程における基板3と基板保持手段13との間の密着力よりも、清掃処理工程における清掃用基板3'と基板保持手段13との間の密着力の方を大きくしている。これにより、基板保持手段13(リング21)に塵等が付着していた場合(通常処理工程において基板3から基板保持手段13に塵等が転着していた場合)には、通常処理工程における基板3と基板保持手段13との間の密着力よりも高い清掃用基板3'と基板保持手段13との間の密着力によって塵等が基板保持手段13(リング21)から清掃用基板3'の裏面(清掃面)に転着される。すなわち、基板保持手段13に付着していた塵等が除去される。   In the substrate liquid processing apparatus 10, a cleaning process for cleaning the substrate holding means 13 with the cleaning substrate 3 ′ is executed. In this cleaning process, the cleaning substrate 3 ′ is held using the substrate holding means 13. At that time, the substrate suction mechanism 22 is driven, and the back surface (cleaning surface) of the cleaning substrate 3 ′ is adsorbed to the upper portion of the ring 21 with a predetermined adhesion force by the suction force. Here, the adhesion force between the cleaning substrate 3 ′ and the substrate holding means 13 in the cleaning process step is made larger than the adhesion force between the substrate 3 and the substrate holding means 13 in the previous normal processing step. ing. As a result, when dust or the like adheres to the substrate holding means 13 (ring 21) (when dust or the like is transferred from the substrate 3 to the substrate holding means 13 in the normal processing step), the normal processing step Dust or the like is removed from the substrate holding means 13 (ring 21) by the adhesion force between the cleaning substrate 3 ′ and the substrate holding means 13 which is higher than the adhesion force between the substrate 3 and the substrate holding means 13. It is transferred to the back surface (cleaning surface). That is, dust or the like adhering to the substrate holding means 13 is removed.

次に、基板処理装置1は、基板搬送装置9を用いて清掃用基板3'を基板液処理装置10から清掃用基板洗浄装置11に搬送する。   Next, the substrate processing apparatus 1 transfers the cleaning substrate 3 ′ from the substrate liquid processing apparatus 10 to the cleaning substrate cleaning apparatus 11 using the substrate transfer apparatus 9.

清掃用基板洗浄装置11では、清掃用基板3'の基板保持手段13と接触した面(清掃面)を洗浄処理する洗浄処理工程を実行する。この洗浄処理工程では、清掃用基板保持手段37を用いて清掃用基板3'を保持する。その後、回転機構43によって清掃用基板3'を回転させ、洗浄液供給手段38,52によって清掃用基板3'の表面及び裏面に洗浄液を一定時間供給して清掃用基板3'の洗浄処理を行う。その後、回転機構43によって清掃用基板3'を一定時間回転して清掃用基板3'の表面及び裏面から洗浄液を振り切って乾燥処理を行う。これにより、清掃用基板3'の裏面(清掃面)から塵等が除去され、清掃用基板3'を繰返し使用することができる。   The cleaning substrate cleaning apparatus 11 executes a cleaning process for cleaning the surface (cleaning surface) in contact with the substrate holding means 13 of the cleaning substrate 3 ′. In this cleaning process, the cleaning substrate 3 ′ is held using the cleaning substrate holding means 37. Thereafter, the cleaning substrate 3 ′ is rotated by the rotation mechanism 43, and the cleaning liquid is supplied to the front and back surfaces of the cleaning substrate 3 ′ by the cleaning liquid supply means 38 and 52 for a predetermined time to perform the cleaning process on the cleaning substrate 3 ′. Thereafter, the cleaning substrate 3 ′ is rotated by the rotation mechanism 43 for a certain period of time, and the cleaning liquid is shaken off from the front and back surfaces of the cleaning substrate 3 ′ to perform a drying process. Thereby, dust etc. are removed from the back surface (cleaning surface) of the cleaning substrate 3 ′, and the cleaning substrate 3 ′ can be used repeatedly.

次に、基板処理装置1は、基板搬送装置9を用いて清掃用基板洗浄装置11から清掃用基板収容部7bに搬出する。   Next, the substrate processing apparatus 1 uses the substrate transport device 9 to carry it out of the cleaning substrate cleaning device 11 to the cleaning substrate housing portion 7b.

基板処理装置1では、上記処理を繰返し行うことで、複数枚の基板3を連続して処理する。なお、基板3を処理する通常処理工程を実行する毎に清掃用基板3'を用いて基板保持手段13を清掃する清掃処理工程を実行してもよく、複数回の通常処理工程を実行した後に1回の清掃処理工程を実行してもよい。また、清掃処理工程を実行する毎に清掃用基板3'を洗浄する洗浄処理工程を実行してもよく、複数回の清掃処理工程を実行した後に1回の洗浄処理工程を実行してもよい。さらに、通常処理工程と洗浄処理工程とを同時に並行して実行してもよい。   In the substrate processing apparatus 1, a plurality of substrates 3 are continuously processed by repeating the above processing. Each time a normal processing step for processing the substrate 3 is executed, a cleaning processing step for cleaning the substrate holding means 13 using the cleaning substrate 3 ′ may be executed, and after a plurality of normal processing steps are executed. One cleaning process may be performed. Further, each time the cleaning process step is executed, a cleaning process step for cleaning the cleaning substrate 3 ′ may be executed, or a single cleaning process step may be executed after a plurality of cleaning process steps are executed. . Furthermore, the normal processing step and the cleaning processing step may be performed in parallel.

このように、上記基板処理装置1では、基板3を基板保持手段13で吸着して保持しながら基板3の処理を行う通常処理工程と、清掃用基板3'を基板保持手段13で吸着して保持して基板保持手段13の清掃を行う清掃処理工程とを行っている。そして、上記基板処理装置1では、通常処理工程における基板3と基板保持手段13との間の密着力よりも、清掃処理工程における清掃用基板3'と基板保持手段13との間の密着力を大きくしている。   As described above, in the substrate processing apparatus 1, the normal processing process for processing the substrate 3 while adsorbing and holding the substrate 3 by the substrate holding means 13 and the cleaning substrate 3 ′ are adsorbed by the substrate holding means 13. A cleaning process for holding and cleaning the substrate holding means 13 is performed. In the substrate processing apparatus 1, the adhesion force between the cleaning substrate 3 ′ and the substrate holding means 13 in the cleaning process step is greater than the adhesion force between the substrate 3 and the substrate holding means 13 in the normal processing step. It is getting bigger.

これにより、基板3に付着していた塵等は、通常処理工程において一旦は基板保持手段13に転着するが、清掃処理工程において清掃用基板3'に転着することで基板保持手段13から除去される。そのため、塵等が後に処理する基板3に再付着するのを防止することができ、基板保持手段13を介した基板間でのクロスコンタミネーションの発生を抑制することができる。   Thereby, dust or the like adhering to the substrate 3 is temporarily transferred to the substrate holding means 13 in the normal processing step, but is transferred from the substrate holding means 13 to the cleaning substrate 3 ′ in the cleaning processing step. Removed. Therefore, dust or the like can be prevented from reattaching to the substrate 3 to be processed later, and occurrence of cross contamination between the substrates via the substrate holding means 13 can be suppressed.

基板保持手段13への密着力は、基板保持手段13の基板吸引機構22の吸引力を通常処理工程よりも清掃処理工程で大きくすることで容易に増大させることができる。   The adhesion force to the substrate holding means 13 can be easily increased by making the suction force of the substrate suction mechanism 22 of the substrate holding means 13 larger in the cleaning process than in the normal process.

また、清掃用基板3'の材質や重さなどを基板3と異ならせることで、清掃用基板3'を基板3よりも基板保持手段13に密着しやすくして基板保持手段13への密着力を増大させることもできる。   Further, by making the material and weight of the cleaning substrate 3 ′ different from the substrate 3, the cleaning substrate 3 ′ can be more closely attached to the substrate holding means 13 than the substrate 3, and the adhesion force to the substrate holding means 13 can be improved. Can also be increased.

なお、上記基板処理装置1では、基板3の洗浄処理装置に本発明を適用した場合について説明したが、露光処理装置や塗布処理装置やメッキ処理装置などにも本発明を適用することができる。   In the substrate processing apparatus 1, the case where the present invention is applied to the cleaning processing apparatus for the substrate 3 has been described, but the present invention can also be applied to an exposure processing apparatus, a coating processing apparatus, a plating processing apparatus, and the like.

1 基板処理装置
3 基板
3' 清掃用基板
7a 処理用基板収容部
7b 清掃用基板収容部
9 基板搬送装置
10 基板液処理装置
11 清掃用基板洗浄装置
13 基板保持手段
1 Substrate processing device 3 Substrate
3 'Cleaning substrate
7a Processing substrate holder
7b Cleaning substrate container 9 Substrate transfer device
10 Substrate liquid processing equipment
11 Substrate cleaning equipment for cleaning
13 Substrate holding means

Claims (8)

基板又は清掃用基板を吸着して保持する基板保持手段と、
前記基板保持手段に設けた基板吸引機構と、
前記基板吸引機構の吸引力を制御する制御手段と、
を有し、
前記制御手段は、
前記基板を前記基板保持手段に第1の吸引力で吸着保持しながら前記基板の処理を行う通常処理工程と、
清掃用基板を前記基板保持手段に第2の吸引力で吸着保持して前記基板保持手段の清掃を行う清掃処理工程と、
を行い、
前記第2の吸引力を前記第1の吸引力よりも大きくすることにより、前記通常処理工程において前記基板を吸着保持して処理を行う際の前記基板と前記基板保持手段との間の密着力よりも、前記清掃処理工程において前記基板とは異なる前記清掃用基板を吸着保持する際の前記清掃用基板と前記基板保持手段との間の密着力を大きくしたことを特徴とする基板処理装置。
A substrate holding means for adsorbing and holding a substrate or a cleaning substrate;
A substrate suction mechanism provided in the substrate holding means;
Control means for controlling the suction force of the substrate suction mechanism;
Have
The control means includes
A normal processing step of processing the substrate while adsorbing and holding the substrate to the substrate holding means with a first suction force;
A cleaning process for cleaning the substrate holding means by adsorbing and holding the cleaning substrate to the substrate holding means with a second suction force; and
And
To be greater than the first suction force said second suction force, between the substrate and the substrate holding means when performing the normal processing steps for Oite the substrate adsorbed and held in the processing than adhesion, characterized in that to increase the adhesion between said cleaning substrate at the time of suction holding different the cleaning substrate the substrate holding means and Oite the substrate to the cleaning treatment step Substrate processing equipment.
前記基板保持手段は、板状のプレートと弾性材料からなるリングとを含み、前記リングが前記第1又は第2の吸引力により吸引されるときに弾性変形して前記基板又は前記清掃用基板に密着することを特徴とする請求項1に記載の基板処理装置。 The substrate holding means includes a plate-like plate and a ring made of an elastic material, and is elastically deformed when the ring is sucked by the first or second suction force to the substrate or the cleaning substrate. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is closely attached . 前記清掃用基板は、前記基板よりも前記基板保持手段に密着しやすい材質又は前記基板よりも重くしたことを特徴とする請求項1又は請求項2に記載の基板処理装置。   The substrate processing apparatus according to claim 1, wherein the cleaning substrate is made of a material that is more easily adhered to the substrate holding unit than the substrate or is heavier than the substrate. 前記清掃用基板を洗浄して繰返し使用するための清掃用基板洗浄装置を設けたことを特徴とする請求項1〜請求項3のいずれかに記載の基板処理装置。   The substrate processing apparatus according to claim 1, further comprising a cleaning substrate cleaning apparatus for cleaning and repeatedly using the cleaning substrate. 基板を基板保持手段に第1の吸引力で吸着保持しながら基板の処理を行う通常処理工程と、
清掃用基板を前記基板保持手段に第2の吸引力で吸着保持して前記基板保持手段の清掃を行う清掃処理工程と、
を有し、
前記第2の吸引力を前記第1の吸引力よりも大きくすることにより、前記通常処理工程において前記基板を吸着保持して処理を行う際の前記基板と前記基板保持手段との間の密着力よりも、前記清掃処理工程において前記基板とは異なる前記清掃用基板を吸着保持する際の前記清掃用基板と前記基板保持手段との間の密着力を大きくしたことを特徴とする基板処理方法。
A normal processing step for processing the substrate while adsorbing and holding the substrate to the substrate holding means with a first suction force; and
A cleaning process for cleaning the substrate holding means by adsorbing and holding the cleaning substrate to the substrate holding means with a second suction force; and
Have
To be greater than the first suction force said second suction force, between the substrate and the substrate holding means when performing the normal processing steps for Oite the substrate adsorbed and held in the processing than adhesion, characterized in that to increase the adhesion between said cleaning substrate at the time of suction holding different the cleaning substrate the substrate holding means and Oite the substrate to the cleaning treatment step Substrate processing method.
前記基板保持手段は、板状のプレートと弾性材料からなるリングとを含み、前記リングが前記第1又は第2の吸引力により吸引されるときに弾性変形して前記基板又は前記清掃用基板に密着することを特徴とする請求項5に記載の基板処理方法。 The substrate holding means includes a plate-like plate and a ring made of an elastic material, and is elastically deformed when the ring is sucked by the first or second suction force to the substrate or the cleaning substrate. The substrate processing method according to claim 5, wherein the substrates are in close contact . 前記清掃用基板を前記基板よりも前記基板保持手段に密着しやすい材質又は前記基板よりも重くしたことを特徴とする請求項5又は請求項6に記載の基板処理方法。   7. The substrate processing method according to claim 5, wherein the cleaning substrate is made of a material that is more easily adhered to the substrate holding unit than the substrate or heavier than the substrate. 前記清掃用基板を洗浄して繰返し使用することを特徴とする請求項5〜請求項7のいずれかに記載の基板処理方法。
The substrate processing method according to claim 5, wherein the cleaning substrate is washed and used repeatedly.
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