JP5886821B2 - Substrate processing apparatus and method - Google Patents

Description

  The present invention relates to an apparatus and method for processing a substrate, and more particularly to an apparatus and method for processing a substrate using plasma.

  A wafer that has undergone a FEOL (Front End Of Line) process has a thickness that is greater than necessary. Therefore, the wafer is thinned through a back grinding process. However, the thickness is too thin, and handling of the wafer is not easy. Therefore, the carrier is attached to the wafer by using an adhesive for wafer handling. The carrier is removed after subsequent steps of chip bonding, underfill, and molding.

  After removing the carrier, the wafer is handled while attached to the mounting tape fixed to the frame ring. The mounting tape not only facilitates handling of the wafer, but also prevents the chips from being scattered when the wafer is separated into individual chips.

  The adhesive is not completely removed from the wafer from which the carrier has been removed, and a part of the adhesive remains. In order to remove this, a plasma process is additionally performed. During the plasma process, not only the wafer but also the mounting tape is exposed to the plasma. The mounting tape is denatured by the plasma and handling of the wafer becomes difficult, and the tape is not easily removed and a part of the wafer remains on the wafer.

Japanese Patent Publication No. 2010-525561

Embodiments of the present invention provide a substrate processing apparatus capable of easily removing an adhesive attached to a wafer.
The embodiment of the present invention also provides a substrate processing apparatus that can prevent the mounting tape from being denatured.
The embodiment of the present invention also provides a substrate processing apparatus that can easily handle a wafer attached to a mounting tape.

  The purpose of the present invention is not limited here, and other objects not mentioned can be clearly understood by those skilled in the art from the following description.

According to an embodiment of the present invention, there is provided a substrate processing apparatus including a load port on which a carrier storing a plurality of substrates on which a wafer on which back grinding is completed is attached to a mounting tape fixed to a frame ring is placed, and a plasma A plasma processing unit for processing the upper surface of the wafer, and a substrate transfer unit for transferring the substrate between the carrier and the plasma processing unit.
The plasma processing unit includes a process chamber having a space formed therein, a susceptor that is positioned inside the process chamber and supports the substrate, and a plasma supply unit that supplies plasma to the inside of the process chamber. And a blocking member that covers the mounting tape so as not to be exposed to plasma.
The blocking member may include a blocking ring that covers a space between the wafer and the frame ring and that is not in contact with the mounting tape, and an elevating member that moves the blocking ring up and down.
Further, the blocking ring has a ring shape, a body facing the mounting tape, an inner portion that extends from the inside of the body so as to incline downward, and an end of which contacts the edge region of the wafer, An outer portion extending from the outside of the body so as to be inclined downward and having an end contacting the frame ring.
In addition, the blocking ring has a ring shape, and extends from the inner side of the body to face the mounting tape so as to incline downward, and an end thereof maintains a predetermined distance from the upper surface of the wafer. And an outer portion that extends downwardly from the outer side of the body and whose end contacts the frame ring.
The frame ring may have a width that can cover an outer edge region of the frame ring from an edge region of the wafer.
The blocking ring may be provided with a ceramic material.
The elevating member supports a first load that supports the blocking ring, and a first space that supports the first load at a lower portion of the first load, and a space in which the first load can be elevated is formed inside. A second load, a third load that supports the second load at a lower portion of the second load, and a space in which the second load can be moved up and down is formed inside; the first load and the second load; A drive unit that individually lifts and lowering, and the second load is provided with an underlay piece for seating the substrate on the susceptor in a state of supporting the mounting ring, and the underlay is provided in an edge region of the susceptor. An accommodation space in which the piece can move in the vertical direction can be formed.
In addition, the receiving space may be provided up to a point where the edge of the wafer is located inside the outer surface of the susceptor.
In addition, the transport unit may include a transport robot that has a hand unit that grips a partial region of the frame ring in a last-minute manner and transports the substrate.
The hand unit includes a lower hand in which a partial region of the frame ring is placed, an upper hand that is positioned above the lower hand and holds the frame ring placed on the lower hand and fixes the lower hand, and the lower hand And a driving unit that moves the upper hand so that the upper hand is spread or folded with respect to the hand.
The front end of the lower hand may have an arc shape having the same curvature as the frame ring.

A substrate processing apparatus according to another embodiment of the present invention includes a process chamber in which a space is formed, and a wafer in which back grinding is completed on a mounting tape that is positioned inside the process chamber and is fixed to a frame ring. A susceptor on which a substrate to which is attached is placed; a plasma supply unit for supplying a plasma gas into the process chamber;
A blocking ring that covers the mounting tape exposed to the outside in the substrate region placed on the susceptor; and a lifting member that lifts and lowers the blocking ring.
In addition, the blocking ring covers a space between the wafer and the frame ring in the region of the substrate, and can make no contact with the mounting tape.
The blocking ring may have a width that can cover an outer edge region of the frame ring from an edge region of the wafer.
The blocking ring may have an inner end in contact with the upper surface of the wafer and an outer end in contact with the upper surface of the frame ring.
In addition, the inner end of the blocking ring may maintain a predetermined distance from the upper surface of the wafer, and the outer end may contact the upper surface of the frame ring.
In addition, the elevating member includes a moving load in which the blocking ring is coupled to an upper end, and a driving unit for elevating the moving load. The moving load supports the mounting ring and descends together with the moving load. Then, an underlay piece for fixing the substrate to the susceptor is coupled, and an accommodation space in which the underlay piece can be raised and lowered can be formed in an edge region of the susceptor.

In the substrate processing method according to an embodiment of the present invention, a transfer robot transfers a substrate on which a back-grinded wafer is attached to a mounting tape fixed to a frame ring, and transfers the substrate into the process chamber. The substrate is seated on the susceptor provided in step (3), and plasma is supplied into the process chamber to treat the upper surface of the wafer.
The substrate placed on the susceptor may be covered with a blocking ring so that the mounting tape is not exposed to the plasma.
The blocking ring may have a ring shape and cover a region between the wafer and the frame ring.
The blocking ring may cover an outer edge region of the frame ring from an edge region of the wafer.
In addition, the inner end of the blocking ring may be in contact with the wafer.
In addition, the inner end of the blocking ring may be spaced apart from the wafer by a predetermined distance.
Also, the step of seating the substrate on the susceptor includes lowering the underlay piece together with the lowering of the moving load in a state where the frame ring is placed on the underlay piece combined with the moving load for raising and lowering the blocking ring. Can do.
In addition, the transfer robot can transfer the substrate in a state where the hand unit grips a partial area of the frame ring in a final manner.

  A substrate processing apparatus according to another embodiment of the present invention processes a substrate on which a wafer that has been back-ground is attached to a mounting tape fixed to a frame ring, and finally uses a partial region of the frame ring as a method. It includes a transfer robot that has a gripping hand portion and transfers the substrate.

  According to another embodiment of the present invention, there is provided a substrate processing method of processing a substrate on which a wafer that has been back-ground is attached to a mounting tape fixed to a frame ring, and a hand portion of a transfer robot is loaded with the substrate. The substrate is picked up from the carrier, and the hand portion grips a partial region of the frame ring in a finally squeezed manner to pick up the substrate.

  According to an embodiment of the present invention, after the carrier is removed, the adhesive remaining on the wafer is completely removed.

  Further, according to the embodiment of the present invention, since the mounting tape is blocked from being exposed to plasma, the mounting tape is prevented from being denatured.

  In addition, according to the embodiment of the present invention, since the substrate is transported in a state where the transfer robot finally holds the frame ring in a manner, the handling of the wafer is easy.

1 is a plan view schematically showing a substrate processing apparatus according to an embodiment of the present invention. 1 is a perspective view illustrating a substrate provided to a substrate processing apparatus according to an embodiment of the present invention. 3 is a diagram sequentially illustrating a process of manufacturing the substrate of FIG. 2. 3 is a diagram illustrating a state where a substrate is stored in a carrier according to an exemplary embodiment of the present invention. 1 is a diagram illustrating a first transfer robot according to an embodiment of the present invention. It is drawing which shows the hand part of FIG. 6 is a diagram illustrating a process in which a hand unit grips a substrate. 1 is a diagram illustrating a plasma processing unit according to an embodiment of the present invention. It is a top view which shows the susceptor and blocking member by one Embodiment of this invention. 1 is a view showing a susceptor and a blocking member according to an embodiment of the present invention. 6 is a diagram illustrating a blocking member according to another embodiment of the present invention.

  Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings. Embodiments of the present invention can be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more fully explain the present invention to those skilled in the art. Accordingly, the shape of the elements in the drawings has been exaggerated to emphasize a clearer description.

  FIG. 1 is a plan view schematically showing a substrate processing apparatus according to an embodiment of the present invention.

  Referring to FIG. 1, the substrate processing apparatus 1 includes a load port 10, a substrate transfer unit 20, and a plasma processing unit 30. The load port 10, the substrate transfer unit 20, and the plasma processing unit 30 are sequentially arranged in one direction. Hereinafter, the direction in which the load port 10, the substrate transfer unit 20, and the plasma processing unit 30 are arranged is referred to as a first direction 2, and the direction perpendicular to the first direction 2 when viewed from above is the second direction 3. It is defined as

  The load ports 10 are positioned in front of the substrate transfer unit 20, and a plurality of the load ports 10 are arranged in a row apart from each other along the second direction 3. Carriers (for example, cassettes, FOUPs, etc.) 100 are respectively attached to the load ports 10. The carrier 100 stores the substrate 50 provided for the process and the substrate 50 that has been processed. According to the embodiment, the substrate 50 is provided in a structure in which a wafer that has been back-ground is attached to a mounting tape fixed to a frame ring.

  FIG. 2 is a perspective view illustrating a substrate provided to a substrate processing apparatus according to an embodiment of the present invention. FIG. 3 is a view sequentially illustrating a process of manufacturing the substrate of FIG.

  Referring to FIGS. 2 and 3, a wafer 51 in which a FEOL (Front end of line) process is completed as shown in FIG. 3A is provided. As shown in FIG. 3B, a TSV (Through Silicon Via) 52 and bumps 53 are sequentially formed on the wafer 51, and the carrier 54 is bonded thereto. The carrier 54 is provided as a silicon or glass plate for handling the wafer 51 because the wafer 51 is so thin that it is difficult to handle when the wafer 51 undergoes a back grinding process. The carrier 54 is bonded to the upper surface of the wafer 51 by an adhesive 55.

  The wafer 51 to which the carrier 54 is attached is provided to a back grinding process in order to reduce the assembly size of the package. Since the thickness of the wafer 51 that has undergone the FEOL process becomes unnecessarily thick, the back surface of the wafer 51 is polished very thinly as shown in FIG.

  After the back grinding process, the wafer 51a is flipped as shown in FIG. 3D, and chip bonding 61 is performed. Then, as shown in FIG. 3E, an underfill 62 and a molding 63 are sequentially performed.

  The wafer 51b for which the molding process has been completed is attached onto the mounting tape 72 fixed to the frame ring 71 as shown in FIG. The frame ring 71 is provided in a ring shape having a larger radius than the wafer 51b and is made of stainless steel or SUS material. Since the mounting tape 72 is a thin film and it is difficult to maintain the wafer 51b on the film itself, the mounting tape 72 is fixed to the frame ring 71. The mounting tape 72 includes three layers, that is, a base film, an adhesive layer to which a wafer is bonded, and a protective film that protects the adhesive layer. Since the frame ring 71 has a larger radius than the wafer 51b, the mounting tape 72 is exposed to the outside in a region between the frame ring 71 and the wafer 52b when viewed from above.

  After the wafer 52b is attached to the mounting tape 72, the carrier 54 is removed as shown in FIG. If the carrier 54 is removed, the mounting tape 72 is provided to the process with the wafer 51c attached to the mounting tape 72 instead of temporarily serving as the carrier 54. The frame ring 71 and the mounting tape 72 facilitate handling of the wafer 51c. The mounting tape 72 prevents the chips from being scattered or lost when the wafer 51c is diced and separated into individual chips.

  The adhesive 55a remains on the upper surface of the wafer 51c from which the carrier 54 has been removed, and an additional process is required to remove it. The plasma processing unit 30 described later performs a process of removing the adhesive 55a remaining on the wafer 51c using plasma.

  FIG. 4 is a view illustrating a state where a substrate is stored in a carrier according to an exemplary embodiment of the present invention.

  Referring to FIG. 4, a slot 101 is coupled to both inner side walls of the carrier 100. The slots 101 are arranged in the vertical direction while maintaining a predetermined interval. The substrate 50 is stored in a state where both side portions of the frame ring 71 are seated in the slot 101. The mounting tape 72 droops due to the weight of the wafer 51c.

  Referring to FIG. 1 again, the substrate transport unit 20 transports the substrate 50 between the carrier 100 and the substrate processing unit 30. The substrate transfer unit 20 includes a frame 210, a first transfer robot 220, a load lock chamber 230, a transfer chamber 240, and a second transfer robot 250.

  The frame 210 is disposed between the load port 10 and the load lock chamber 230. A first transfer robot 220 is disposed inside the frame 210. The first transfer robot 220 transfers the substrate 50 between the carrier 100 and the load lock chamber 230.

  FIG. 5 is a view showing a first transfer robot according to an embodiment of the present invention, and FIG. 6 is a view showing a hand unit of FIG.

  Referring to FIGS. 5 and 6, the first transfer robot 220 has a structure in which a plurality of arms 221 and 222 can rotate with respect to each other, and a hand portion 223 is provided at an upper end. The hand portion 223 has a structure capable of gripping the frame ring 71 in a lasting manner. The hand unit 223 includes a lower hand 224, an upper hand 225, and a driving unit 226.

  A partial region of the frame ring 71 is placed on the lower hand 224. The front end of the lower hand 224 has an arc-shaped support frame 224 a having the same curvature as the frame ring 71. A part of the frame ring 71 is placed on the support frame 224a and stably supported.

  The upper hand 225 is located above the lower hand 224 and holds the substrate 50 by pressing the frame ring 71 placed on the lower hand 224. The front end of the upper hand 225 may have a horseshoe shape. The upper hand 225 is coupled to the lower hand 224 so as to be rotatable, and holds the frame ring 71 while being spread or folded with respect to the lower hand 224.

  The driving unit 226 moves the upper hand 225 relative to the lower hand 224 so that the upper hand 225 and the lower hand 224 can grip the frame ring 71 or release the grip. When the upper hand 225 is axially coupled to the lower hand 224, the driving unit 226 can rotate the upper hand 225 around the axis. In contrast, when the rear end of the upper hand 225 is coupled to a load (not shown) that is movable in the vertical direction, the driving unit 226 can move the upper hand 225 by moving the load up and down.

  FIG. 7 is a diagram illustrating a process in which the hand unit grips the substrate.

  Referring to FIG. 7, the lower hand 224 of the hand unit 223 enters under the frame ring 71. Since the front end 224 a of the lower hand 224 has the same curvature as the frame ring 71, it is positioned at the lower part according to a part of the region of the frame ring 71. The upper hand 223 is lowered by driving of the driving unit 226, and the front end presses the upper surface of the frame ring 71. The frame ring 71 is supported by the lower hand 224 and is held and held by the upper hand 225. The hand unit 223 picks up the substrate 50 while holding the frame ring 71, and retracts to the outside of the carrier 100.

  According to the embodiment, the lower hand 224 is restricted from entering under the wafer 51c. Since the mounting taper 72 hangs down due to the weight of the wafer 51 c, the wafer 51 c is positioned at a lower level than the frame ring 71. When the front end 224a of the lower hand 224 enters below the wafer 51c, it may collide with the wafer 51c during the entering process. In the present invention, since the front end 224a of the lower hand 224 enters below the frame ring 71 and grips the substrate 50, the collision between the hand portion 223 and the wafer 51c is prevented.

  Referring back to FIG. 1, the load lock chamber 230 is disposed between the transfer chamber 240 and the frame 210. A substrate 50 is stacked inside the load lock chamber 230. The load lock chamber 230 provides a waiting space before the substrate 50 provided for the process is transferred to the plasma processing unit 30 or before the substrate 50 that has been processed is transferred to the carrier 100. One or more load lock chambers 230 may be provided. According to the embodiment, two load lock chambers 230 are provided. The substrate 50 provided to the plasma processing unit 30 for process processing is accommodated in one load lock chamber 230, and the substrate 50 that has been processed in the plasma processing unit 30 is stored in the other load lock chamber 230. Can be stored.

  The transfer chamber 240 is disposed behind the load lock chamber 230 along the first direction 2 and has a polygonal body when viewed from above. A load lock chamber 230 and a plurality of plasma processing units 30 are disposed outside the main body 240 along the periphery of the main body 240. According to an embodiment, the transfer chamber 240 has a hexagonal body when viewed from above. Load lock chambers 230 are respectively disposed on two side walls adjacent to the frame 210, and the plasma processing unit 30 is disposed on the remaining side walls. A passage (not shown) through which the substrate 50 enters and exits is formed on each side wall of the main body 240. The passage provides a space for the substrate 50 to enter and exit between the transfer chamber 240 and the load lock chamber 230 or between the transfer chamber 240 and the process chamber 30. Each passage is provided with a door (not shown) for opening and closing the passage. The transfer chamber 240 may be provided in various shapes depending on a required process module.

  A second transfer robot 250 is disposed inside the transfer chamber 240. The second transfer robot 250 transfers the unprocessed substrate 50 waiting in the load lock chamber 230 to the plasma processing unit 30, or transfers the substrate 50 that has been processed in the plasma processing unit 30 to the load lock chamber 230. The second transfer robot 250 can sequentially provide the substrate 50 to the plasma processing unit 30. The second transfer robot 250 holds the substrate 50 in the same manner as the first transfer robot 220. The second transfer robot 250 transfers the substrate 50 in a state where the hand unit 251 finally holds the frame ring 71 in a gripping manner. The hand unit 251 of the second transfer robot 250 can have the same structure as the hand unit (223 of FIG. 5) of the first transfer robot 220.

  The plasma processing unit 30 supplies plasma to remove the adhesive 55a remaining on the wafer 51c.

  FIG. 8 shows a plasma processing unit according to an embodiment of the present invention. Referring to FIG. 8, the plasma processing unit 50 includes a process chamber 310, a susceptor 320, a shower head 330, a plasma supply unit 340, and a blocking member 350.

  The process chamber 310 provides a space in which process processes are performed. The process chamber 310 includes a body 311 and a sealing cover 312. The body 311 has an open upper surface and a space is formed inside. An opening (not shown) through which the substrate 50 enters and exits is formed on the side wall of the body 311, and the opening is opened and closed by an opening / closing member such as a slit door (not shown). The opening / closing member closes the opening while processing the substrate 50 in the process chamber 310, and opens the opening when the substrate 50 is carried into the process chamber 310 and carried out of the process chamber 310. With the opening opened, the hand unit 251 of the second transfer robot 250 enters and exits the process chamber 310.

  An exhaust hole 313 is formed in the lower wall of the body 311. The exhaust hole 313 is connected to the exhaust line 317. The internal pressure of the process chamber 310 is adjusted through the exhaust line 317, and the reaction part product generated in the process is discharged to the outside of the process chamber 310.

  The sealing cover 312 is coupled to the upper wall of the body 311 and covers the open upper surface of the body 311 to seal the inside of the body 311. The upper end of the hermetic cover 312 is connected to the plasma supply unit 340. A diffusion space 314 is formed in the hermetic cover 312. The closer the diffusion space 314 is to the shower head 330, the wider the width and the reverse funnel shape.

  The susceptor 320 is located inside the process chamber 310, and the substrate 50 is placed on the upper surface. The susceptor 320 may be provided with an electrostatic chuck that attracts the substrate by an electromotive force. An accommodation space 321 is formed in the edge region of the susceptor 320. The accommodation space 321 is inserted into the inside from the outer surface of the susceptor 320. The receiving space 321 may be formed inside the susceptor 320 up to a point where the edge of the wafer 52c is placed. A plurality of receiving spaces 321 may be formed along the periphery of the susceptor 320. According to the embodiment, two receiving spaces 321 may be formed on one side of the susceptor 320, and two may be formed on the other side of the susceptor 320 that is symmetrical to the receiving space 321. The accommodation space 321 provides a space in which an underlay piece 365 described later can move in the vertical direction.

  A circulation cooling channel (not shown) for cooling fluid may be formed inside the susceptor 320. The cooling fluid circulates according to the cooling flow path and cools the susceptor 320 and the substrate 50. The circulation of the cooling fluid prevents the temperature of the wafer 52c from increasing during the plasma process.

  The shower head 330 is coupled to the upper wall of the body 311 by a fastening member. The shower head 330 is arranged in a disc shape and aligned with the upper surface of the susceptor 320. The shower head 330 is made of an aluminum material and is provided with an oxidized surface. A distribution hole 331 is formed in the shower head 330. Distribution holes 331 are formed at regular intervals on a concentric circumference for uniform radical supply. The plasma diffused in the diffusion space 314 flows into the distribution hole 331. At this time, charged particles such as electrons or ions are confined in the shower head 330, and neutral particles such as oxygen radicals that are not charged are passed through the distribution holes 331 and supplied to the substrate 50.

  The plasma supply unit 340 is provided on the process chamber 310 to generate and supply plasma. The plasma supply unit 340 includes an oscillator 341, a waveguide 342, a dielectric tube 343, and a process gas supply unit 344.

  The oscillator 341 generates an electromagnetic wave. The waveguide 342 connects the oscillator 341 and the dielectric tube 343, and provides a path through which the electromagnetic wave generated by the oscillator 341 is transmitted to the inside of the dielectric tube 343. The process gas supply unit 344 supplies process gas into the dielectric tube 343. The process gas includes oxygen and nitrogen, and a fluorine-based gas may be added to improve the adhesive removal efficiency. The process gas supplied into the dielectric tube 343 is excited into a plasma state by an electromagnetic wave. The plasma flows into the diffusion space 314 through the dielectric tube 343.

  FIG. 9 is a plan view showing a susceptor and a blocking member according to an embodiment of the present invention, and FIG. 10 is a view showing a susceptor and a blocking member according to an embodiment of the present invention.

  Referring to FIGS. 8 to 10, the blocking member 350 blocks the mounting tape 71 from being exposed to plasma. The blocking member 350 seats the substrate 50 on the upper surface of the susceptor 320 and lifts the substrate 50 placed on the susceptor 320. The blocking member 350 includes a blocking ring 351 and an elevating member 355.

  The blocking ring 351 is located on the susceptor 320 and covers between the wafer 52 c and the frame ring 71. The blocking ring 351 is provided with a ceramic material. The blocking ring 351 may have a ring shape with an inner diameter smaller than the circumference of the wafer 52c and an outer diameter corresponding to or smaller than the outer diameter of the frame ring 71. The blocking ring 351 has a width that can cover the outer edge region of the frame ring 71 from the edge region of the wafer 52c. The blocking ring 351 has a body 352, an inner part 353, and an outer part 354. The body 352 is positioned facing the mounting tape 72 region exposed to the outside in a ring shape. The body 352 maintains a predetermined distance from the mounting tape 72. The inner portion 353 extends from the inner side of the body 352 so as to incline downward, and its end contacts the edge region of the wafer 52c. The outer portion 354 is extended so as to incline downward from the outside of the body 352, and its end contacts the frame ring 71. The above-described blocking ring 351 is not in contact with the mounting tape 71 and covers an area between the wafer 52 c and the frame ring 71.

  The blocking ring 351 blocks the mounting tape 72 from being exposed to plasma. Since the inner end 353 of the blocking ring 351 is in contact with the wafer 52c and the outer end 354 is in contact with the frame ring 71, the plasma flow into the mounting tape 72 is blocked. When the mounting tape 72 is exposed to the plasma, the mounting tape 72 is stretched and the handling of the substrate 50 becomes a problem, and the mounting tape 72 is denatured. The denatured tape 72 is not easily removed and cannot be completely removed, causing a problem that a part of the tape 72 remains on the wafer 52c. The blocking ring 71 prevents the mounting tape 72 from being exposed to plasma to prevent the above-described problems.

  The elevating member 355 raises and lowers the blocking ring 351. The lift member 355 lifts the blocking ring 351 when the substrate 50 is placed on the susceptor 320 or lifted by the susceptor 320. Then, while the substrate 50 is placed on the susceptor 320, the elevating member 355 covers the mounting taper 72 by lowering the blocking ring 351 downward. The elevating member 355 includes a moving load 361, an underlay piece 365, and a driving unit 368.

  The moving load 361 supports the blocking ring 351 and moves the blocking ring 351 up and down. According to the embodiment, the moving load 361 is provided in a structure in which three loads 362 to 364 are connected to each other. The first load 362 supports the blocking ring 351. The second load 363 supports the first load 362 below the first load 362, and a space in which the first load 362 can move up and down is formed inside. The first load 362 can move in the vertical direction and can be positioned inside the second load 363 and above the second load 363.

  The third load 364 supports the second load 363 below the second load 363, and a space in which the third load 364 can move up and down is formed inside. The second load 363 can move in the vertical direction and can be positioned inside the third load 364 and above the third load 364.

  The drive unit 368 moves the moving load 361 up and down. Specifically, the driving unit 368 moves up and down the first load 362 and the second load 363 individually. The second load 363 moves up and down with respect to the third load 364 and the first load 362 moves up and down with respect to the second load 363 by driving of the driving unit 368.

  The underlay piece 365 is coupled to the moving load 361 and moves up and down together with the moving load 361. According to the embodiment, the underlay piece 365 is coupled to the second load 363. The underlay piece 365 extends from the second load 363 toward the susceptor 320, and its end is located in the accommodation space 321. As the second load 363 moves, the underlay piece 365 moves up and down according to the accommodation space 321. When the underlay piece 365 is positioned above the accommodation space 321, the frame ring 71 is seated. The substrate 50 is lowered with the lowering piece 365 lowered while the frame ring 71 is seated on the lowering piece 365. The substrate 50 is placed on the upper surface of the susceptor 320 while the underlaying piece 365 is lowered. On the contrary, when the underlay piece 365 moves upward in the accommodation space 321, the frame ring 71 is placed on the underlay piece 365. The substrate 50 is picked up from the susceptor 320 in the process of raising the underlay piece 365.

  Hereinafter, a method for processing a substrate using the above-described substrate processing apparatus will be described.

  In the first transfer robot 220, the hand unit 223 enters inside the carrier 100 and grips the frame ring 71. With the lower hand 224 of the hand unit 223 positioned at the lower part of the frame ring 71, the upper hand 225 holds the substrate 50 by pressing the frame ring 71. The hand unit 223 moves backward while holding the substrate 50, and the first transfer robot 220 transfers the substrate 50 and stores it in the load lock chamber 230.

  The second transfer robot 250 unloads the substrate 50 with the hand unit 251 holding the frame ring 71 of the substrate 50 stored in the load lock chamber 230. The second transfer robot 250 transfers the substrate 50 while maintaining the substrate 50 and provides it to the inside of the process chamber 310.

  In the process chamber 310, the first load 362 and the second load 363 move up and down and the underlay piece 365 stands by. The substrate 50 has a frame ring 71 attached to an underlay piece 365. The second load 363 descends in a state where the substrate 50 is supported by the underlay piece 365. The substrate 50 is seated on the susceptor 320 while the underlay piece 365 together with the second load 363 is lowered. Thereafter, the blocking ring 351 moves down together with the first load 362 to cover the mounting tape 72.

  The plasma supply unit 340 generates plasma and supplies it to the inside of the process chamber 310. A process gas is supplied to the inside of the dielectric tube 343 by the process gas supply unit 344, and an electromagnetic wave generated by the oscillator 341 is transmitted to the inside of the dielectric tube 343 through the waveguide 342. The electromagnetic wave excites the process gas into a plasma state. The plasma flows into the diffusion space 314 and flows into the process chamber 310 through the diffusion space 314 and the distribution hole 331 of the shower head 330. The plasma is supplied to the upper surface of the wafer 52 c, and the flow into the mounting tape 72 is restricted by the blocking ring 351. The plasma removes the adhesive adhered to the upper surface of the wafer 52c. The gas and reaction by-products that remain inside the process chamber 310 flow into the exhaust hole 411 through the hole of the exhaust plate 410 and are exhausted to the outside.

  When the process is completed, the first load 362 and the second load 363 rise. The substrate 50 is lifted from the susceptor 320 while the underlay piece 365 rises together with the second load 363. While the substrate 50 is supported by the underlay piece 365, the hand unit 251 of the second transfer robot 250 enters the process chamber 310 and grips the frame ring 71. The second transfer robot 250 unloads the substrate 50 from the process chamber 310, transfers the substrate 50, and stores it in the load lock chamber 230.

  The hand unit 223 of the first transfer robot 220 holds the frame ring 71 of the substrate 50 stored in the load lock chamber 230, transfers the substrate 50, and stores it in the carrier 100.

  FIG. 11 is a view showing a blocking member according to another embodiment of the present invention.

  Referring to FIG. 11, the inner end 453 of the blocking ring 451 is maintained at a predetermined distance from the upper surface of the wafer 52c. The blocking ring 451 covers between the wafer 52c and the frame ring 71 so that the mounting tape 72 is not exposed to plasma.

  Referring to FIG. 3 again, in the above-described embodiment, after the molding 63 step, the wafer 51b is attached to the mounting adhesive 72, the carrier 54 is removed, and then the adhesive layer 55a remaining on the wafer 51c is removed. Explained that the process was carried out. In contrast, the removal of the adhesive layer 55a may be performed before the chip 61 bonding. According to the embodiment, after the carrier 54 is bonded to the FEOL wafer 51 and the back grinding process is performed, the carrier 54 is removed with the wafer 51a attached to the mounting adhesive 72, and the adhesive layer remaining on the wafer 51a is removed. 55a can be removed. Thereafter, a chip 61 bonding process, an underfill 62 process, and a molding 63 process are sequentially performed.

  The foregoing detailed description is merely illustrative of the invention. Also, the foregoing is intended to illustrate and describe the preferred embodiment of the present invention, and the present invention can be used in a variety of other combinations, modifications and environments. That is, changes or modifications can be made within the scope of the inventive concept disclosed in the present specification, the scope equivalent to the above-described disclosure, and / or the skill or knowledge of the industry. The above-described embodiments are for explaining the best state for embodying the technical idea of the present invention, and various modifications required in specific application fields and applications of the present invention are possible. Accordingly, the above detailed description of the invention is not intended to limit the invention to the disclosed embodiments. Also, the appended claims should be construed to include other implementations.

DESCRIPTION OF SYMBOLS 1 ... Substrate processing apparatus 10 ... Load port 20 ... Substrate conveyance unit 30 ... Plasma processing unit 50 ... Substrate 71 ... Frame ring 72 ... Mounting tape 52c ... Wafer 100 ... Carrier 220 ... First transfer robot 224 ... Lower hand 225 ... Upper hand 250 ... Second transfer robot 310 ... Process chamber 320 ... Susceptor 330 ... Shower head 340 ... Plasma supply part 350 ... Blocking member 351 ... Blocking ring 361 ... Moving load 365 ... Underlay piece 368 ... Drive part

Claims (24)

An apparatus for processing a substrate, the apparatus comprising:
A load port on which a carrier storing a plurality of substrates on which a wafer whose back grinding is completed is attached to a mounting tape fixed to a frame ring is placed;
A plasma processing unit for supplying plasma and processing the upper surface of the wafer;
A substrate transfer unit for transferring the substrate between the carrier and the plasma processing unit;
The plasma processing unit includes:
A process chamber having a space formed therein;
A susceptor located inside the process chamber and supporting the substrate;
A plasma supply unit for supplying plasma into the process chamber;
A blocking member that covers the mounting tape so as not to be exposed to plasma,
The blocking member is
A blocking ring that covers between the wafer and the frame ring and does not contact the mounting tape;
An elevating member for elevating and lowering the blocking ring,
The lifting member is
A first load supporting the blocking ring;
A second load that supports the first load at a lower portion of the first load and in which a space in which the first load can be raised and lowered is formed inside;
A third load that supports the second load at a lower portion of the second load, and in which a space in which the second load can be raised and lowered is formed inside;
A drive unit that individually raises and lowers the first load and the second load;
Wherein the second load underlay strip to seating the substrate to the susceptor while supporting the Ma down coating ring is provided,
An apparatus in which an accommodation space is formed in the edge region of the susceptor in which the underlay piece can move in the vertical direction. The blocking ring is
A body having a ring shape and facing the mounting tape;
An inner portion that extends downwardly from the inside of the body and whose end contacts the edge region of the wafer;
An outer portion that extends downwardly from the outside of the body and whose end contacts the frame ring;
The substrate processing apparatus according to claim 1 , comprising: The blocking ring is
A body having a ring shape and facing the mounting tape;
An inner portion that extends downward from the inner side of the body and has a terminal that maintains a predetermined distance from the upper surface of the wafer;
An outer portion that extends downwardly from the outside of the body and whose end contacts the frame ring;
The apparatus of claim 1, comprising:   4. An apparatus according to claim 2 or claim 3, wherein the blocking ring has a width that can cover an outer edge region of the frame ring from an edge region of the wafer.   The apparatus of claim 1, wherein the blocking ring is provided of a ceramic material.   The apparatus according to claim 1, wherein the accommodating space is a side surface of the susceptor and is provided between an outer periphery of the susceptor and a point where an edge of the wafer is located. The transport unit is
The apparatus according to claim 1, further comprising a transfer robot that has a hand portion that grips a partial area of the frame ring in a last-minute manner and transfers the substrate. The hand part is
A lower hand in which a partial area of the frame ring is placed;
An upper hand located above the lower hand and holding down and fixing the frame ring placed on the lower hand;
A drive unit that moves the upper hand so that the upper hand spreads or folds relative to the lower hand; and
The apparatus of claim 7, comprising:   The apparatus according to claim 8, wherein a front end of the lower hand has an arc shape having the same curvature as the frame ring. An apparatus for processing a substrate, the apparatus comprising:
A process chamber having a space formed therein;
A susceptor on which a substrate on which a wafer with back grinding is attached is placed on a mounting tape that is located inside the process chamber and is fixed to a frame ring;
A plasma supply unit for supplying a plasma gas into the process chamber;
A blocking ring covering the mounting tape exposed to the outside in the substrate region placed on the susceptor;
An elevating member for elevating and lowering the blocking ring,
The lifting member is
A moving load in which the blocking ring is coupled to an upper end, the moving load supporting the first load at a lower portion of the first load, the first load supporting the blocking ring, and the first load being A second load in which a space that can be moved up and down is formed inside, and a third load in which a space in which the second load can be moved up and down is supported in the lower portion of the second load. A moving road consisting of
A drive unit that raises and lowers the moving load by individually raising and lowering the first load and the second load;
Wherein the second load moving load, Ma down coating ring is supported, lowered by bonding seated is to underlay strip the substrate to the susceptor with the moving rod,
An apparatus in which an accommodation space in which the underlay piece can move up and down is formed in an edge region of the susceptor.   11. The apparatus of claim 10, wherein the blocking ring covers between the wafer and the frame ring in the region of the substrate and does not contact the mounting tape.   The apparatus of claim 11, wherein the blocking ring has a width that can cover an outer edge region of the frame ring from an edge region of the wafer.   The apparatus of claim 11, wherein an inner end of the blocking ring contacts an upper surface of the wafer, and an outer end of the blocking ring contacts an upper surface of the frame ring.   The apparatus of claim 11, wherein an inner end of the blocking ring maintains a predetermined distance from an upper surface of the wafer, and an outer end of the blocking ring contacts an upper surface of the frame ring. A method of processing a substrate, the method comprising:
A step of transferring a substrate on which a wafer having been back-grounded is attached to a mounting tape fixed to a frame ring by a transfer robot to the inside of the process chamber;
Attaching the substrate to a susceptor provided in the process chamber;
Supplying plasma into the process chamber to process the upper surface of the wafer;
A step of covering the mounting tape so as not to be exposed to plasma by a blocking member;
Covering between the wafer and the frame ring by a blocking ring that does not contact the mounting tape;
A step of raising and lowering the blocking ring by an elevating member, wherein the elevating member supports the first load at a lower portion of the first load, the first load supporting the blocking ring, and the first load. A second load in which a space in which the second load can be lifted is formed inside, and a third load in which the second load is supported at a lower portion of the second load and the space in which the second load can be lifted is formed inside. A load, and a drive unit that individually lifts and lowers the first load and the second load; and
The second load, providing a underlay strip to seating the substrate to the susceptor while supporting the Ma down coating ring,
Forming an accommodation space in the edge region of the susceptor in which the underlay piece can move in the vertical direction;
Including a method.   The method of claim 15, wherein a substrate placed on the susceptor is covered by a blocking ring so that the mounting tape is not exposed to the plasma.   The method of claim 16, wherein the blocking ring has a ring shape and covers an area between the wafer and the frame ring.   The method of claim 17, wherein the blocking ring covers an outer edge region of the frame ring from an edge region of the wafer.   The method of claim 16, wherein an inner end of the blocking ring contacts the wafer.   The substrate processing method according to claim 16, wherein an inner end of the blocking ring is separated from the wafer by a predetermined distance. The step of seating the substrate on the susceptor comprises:
The method according to claim 15, comprising lowering the underlay piece with the lowering of the moving load in a state where the frame ring is placed on the underlay piece coupled to the moving load for raising and lowering the blocking ring.   The method according to claim 15, wherein the transfer robot further includes a step of transferring the substrate while the hand unit grips a partial region of the frame ring in a finally-finished manner. An apparatus for processing a substrate on which a wafer that has been back-ground is attached to a mounting tape fixed to a frame ring, the apparatus comprising:
A hand robot that finally grips a partial area of the frame ring, and a transport robot for transporting the substrate;
A load port on which a carrier containing the substrate is placed;
A plasma processing unit for supplying plasma and processing the upper surface of the wafer;
A substrate transfer unit for transferring the substrate between the carrier and the plasma processing unit;
The plasma processing unit includes:
A process chamber having a space formed therein;
A susceptor located inside the process chamber and supporting the substrate;
A plasma supply unit for supplying plasma into the process chamber;
A blocking member that covers the mounting tape so as not to be exposed to plasma,
The blocking member is
A blocking ring that covers between the wafer and the frame ring and does not contact the mounting tape;
An elevating member for elevating and lowering the blocking ring,
The lifting member is
A first load supporting the blocking ring;
A second load that supports the first load at a lower portion of the first load and in which a space in which the first load can be raised and lowered is formed inside;
A third load that supports the second load at a lower portion of the second load, and in which a space in which the second load can be raised and lowered is formed inside;
A drive unit that individually raises and lowers the first load and the second load;
Wherein the second load underlay strip to seating the substrate to the susceptor while supporting the Ma down coating ring is provided,
In the edge region of the susceptor, an accommodation space is formed in which the underlay piece can move in the vertical direction.
Including the device. A method of processing a substrate on which a wafer that has been back-ground is attached to a mounting tape fixed to a frame ring, the method comprising:
Picking up the substrate from a carrier on which the substrate is loaded by a hand portion of a transfer robot;
A step of picking up the substrate by finally gripping a partial region of the frame ring by the hand unit;
A step of covering the mounting tape so as not to be exposed to plasma by a blocking member;
Covering between the wafer and the frame ring by a blocking ring that does not contact the mounting tape;
A step of raising and lowering the blocking ring by an elevating member, wherein the elevating member supports the first load at a lower portion of the first load, the first load supporting the blocking ring, and the first load. A second load in which a space in which the second load can be lifted is formed inside, and a third load in which the second load is supported at a lower portion of the second load and the space in which the second load can be lifted is formed inside. A load, and a drive unit that individually lifts and lowers the first load and the second load; and
Supporting the substrate by a susceptor located inside the process chamber;
The second load, providing a underlay strip to seating the substrate to the susceptor while supporting the Ma down coating ring,
Forming an accommodation space in the edge region of the susceptor in which the underlay piece can move in the vertical direction;
Including a method.

Images