JP5845929B2 - Base substrate, electronic device, method for manufacturing base substrate, and method for manufacturing electronic device - Google Patents

Description

  The present invention relates to a base substrate, an electronic device, a method for manufacturing a base substrate, and a method for manufacturing an electronic device.

  As shown in FIG. 10, Patent Document 1 discloses a piezoelectric device 100 (electronic device) in which a piezoelectric vibrating piece 106 is arranged in an internal space formed by a base substrate 102 and a cap 104.

  In the piezoelectric device 100, a through hole 108 is formed in a base substrate 102, and the through hole 108 is filled with a through electrode 110. A mounting electrode 112 is provided at a position exposed on the inner surface (upper surface) of the base substrate 12 of the through electrode 110. In addition, the piezoelectric vibrating piece 106 is mechanically and electrically connected to the mounting electrode 112 using a conductive adhesive 114. In a vacuum environment, the cap 104 is bonded to the upper surface of the base substrate 102 to hermetically seal the piezoelectric vibrating piece 106. Therefore, the through electrode 110 is electrically connected to the piezoelectric vibrating piece 106.

  In the above configuration, the through electrode 110 has a tapered shape in which the diameter of the cross section decreases from the lower surface of the base substrate 102 toward the upper surface on which the mounting electrode 112 is disposed. As a result, even if a force drawn into the internal space acts on the through electrode 110 due to vacuum sealing, the through electrode 110 can be applied to the through hole 108 of the through electrode 110 due to the wedge effect with the through hole 108. The fitting is promoted and the hermetic sealing of the internal space is maintained.

  As shown in FIG. 11, Patent Literature 2 is a piezoelectric device 200 (electronic device) similar to Patent Literature 1. However, the through hole 202 has a drum-shaped wall surface with the smallest diameter of the cross section of the central portion of the base substrate 102 in the thickness direction. The piezoelectric device 200 is provided with electrodes 204 that are electrically connected to each other on the wall surface of the through hole 202 and the upper and lower surfaces of the base substrate 102. Also, the terminal alloy 206 is placed in the through hole 202 from the upper surface of the base substrate 102 and the alloy 206 is heated and melted to seal the through hole 202 and to electrically connect the piezoelectric vibrating piece 106 and the electrode 204. A through electrode is formed. The piezoelectric vibrating piece 106 is hermetically sealed by bonding the cap 104 to the upper surface of the base substrate 102 in a vacuum environment.

  Even in the above configuration, the internal space is in a vacuum, but the wedge effect described above is exerted between the lower surface side of the base substrate of the through-hole 202 and the alloy 206, and the hermetic sealing of the internal space is maintained.

JP 2008-252805 A JP-A-6-283951

  On the other hand, in order to reduce the size of an electronic device typified by the piezoelectric device described above, it is necessary to reduce the area of the base substrate. However, in the case of Patent Document 1, the portion of the through electrode exposed on the lower surface of the base substrate is larger than the portion of the through electrode exposed on the upper surface of the base substrate, so that the mounting electrode disposed on the lower surface of the base substrate necessarily has a large area. Become a thing. In the case of Patent Document 2, the size of the electrode surrounding the through hole 202 on the lower surface of the base substrate 102 is approximately the same as the size of the electrode surrounding the periphery of the through hole 202 on the upper surface of the base substrate 102. Therefore, there is a problem that the degree of freedom of the arrangement pattern of the mounting electrodes is lowered, and the customer needs cannot be met.

  Of course, there is a method to leave a part of the exposed part of the bottom surface of the base substrate of the through electrode as a mask and embed a new electrode material in the exposed part of the through electrode to form a mounting electrode. In addition to the disadvantageous structure, the manufacturing process is increased and the cost is increased.

  Further, in the case of the configurations of Patent Documents 1 and 2, outside air leaks through the interface when the bonding is insufficient or due to aging deterioration at the interface between the through electrode and the mounting electrode and the interface between the through electrode and the mounting electrode. As a result, the airtightness of the piezoelectric vibrating piece may be destroyed.

  Accordingly, the present invention pays attention to the above-mentioned problems, and provides a base substrate capable of forming a mounting electrode small without increasing the number of manufacturing steps, an electronic device using the same, a method for manufacturing the base substrate, and a method for manufacturing the electronic device. For the purpose.

SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.
The base substrate manufacturing method according to the first aspect is a through-hole penetrating a substrate, wherein at least a part of the through-hole in the thickness direction of the substrate is on the other surface side from the one surface side of the substrate. Forming the through hole in which the width of the opening on the other surface side is smaller than the inner diameter of the opening on the one surface side by forming a wall surface having a small width, and providing in the through hole And a step of integrally forming a through electrode, a mounting electrode for mounting an electronic component on the one surface, and a mounting electrode provided on the other surface by plating .
The base substrate manufacturing method according to the second aspect is characterized in that, in the base substrate manufacturing method according to the first aspect , the step of forming the through hole is performed by laser or sand blasting.
An electronic device manufacturing method according to the present embodiment includes a step of arranging an electronic component on the mounting electrode on the base substrate manufactured by the manufacturing method according to the first or second embodiment, and a lid for storing the electronic component. by joining the body to the base substrate, characterized in that it comprises a and a step of sealing the electronic component.
[Application Example 1] A mounting surface having a mounting electrode on which an electronic component is mounted, a mounting surface having a mounting electrode on the back side of the mounting surface, and a through-hole penetrating between the mounting surface and the mounting surface. An insulating substrate; and a through electrode that electrically connects the mounting electrode and the mounting electrode and fills the through hole, wherein the through hole is at least in the thickness direction of the insulating substrate of the through hole. In some cases, by having a tapered wall surface whose inner diameter is smaller on the mounting surface side than on the mounting surface side, the inner diameter of the opening portion on the mounting surface side is larger than the inner diameter of the opening portion on the mounting surface side. A base substrate that is also smaller.

  With the above configuration, the through electrode is formed in a tapered shape following the inner wall of the through hole. Therefore, since the mounting surface side of the through electrode is smaller than the mounting surface side of the through electrode, the mounting electrode formed on the portion exposed on the mounting surface of the through electrode can be formed small. Therefore, the base substrate can be formed with a small mounting electrode without increasing the number of manufacturing steps.

Application Example 2 A base substrate according to Application Example 1, wherein the mounting electrode, the through electrode, and the mounting electrode are integrated.
With the above configuration, the mounting surface side of the through hole is filled earlier than the mounting surface side, so that the flatness of the mounting electrode can be ensured with a small amount of plating and high quality can be achieved. Moreover, even if the mounting surface side of the base substrate is vacuum-sealed, the mounting electrode supports the through electrode, so that the airtightness of the through electrode can be maintained. And since the mounting electrode, the through electrode, and the mounting electrode are integrally formed, the manufacturing process is reduced and the cost is reduced, and there is no interface between the electrodes, and airtight destruction through the interface Can be avoided.

Application Example 3 An electronic component is disposed on the mounting electrode of the base substrate according to Application Example 1 or 2, and the electronic component is sealed by bonding a lid to the base substrate. Electronic devices.
With the above configuration, for the same reason as in Application Example 1, the mounting electrode can be formed small without increasing the number of manufacturing steps, and an electronic device that ensures airtightness is obtained.

Application Example 4 A through hole penetrating an insulating substrate, wherein at least part of the through hole in the thickness direction of the insulating substrate has a smaller inner diameter on the other surface side than the one surface side of the insulating substrate. Forming the through hole in which the inner diameter of the opening on the other surface side is smaller than the inner diameter of the opening on the one surface side by forming a wall surface having a shape; and a through hole provided in the through hole And a step of integrally forming an electrode, a mounting electrode for mounting an electronic component on the one surface, and a mounting electrode provided on the other surface. .
By the above method, for the same reason as in application examples 1 and 2, a base substrate capable of forming a mounting electrode small can be manufactured without increasing the manufacturing process.

Application Example 5 The method for manufacturing a base substrate according to Application Example 4, wherein the integrally forming step is performed by plating.
By the above method, the mounting electrode, the through electrode, and the mounting electrode can be formed by a single plating process, so that the manufacturing process is reduced and the cost is reduced, and there is no interface between the electrodes, Airtight destruction through the interface can be avoided.

Application Example 6 The method for manufacturing a base substrate according to Application Example 4 or 5, wherein the step of forming the through hole is performed by laser or sand blasting.
Through holes can be easily formed by the above method.

  [Application Example 7] A step of arranging an electronic component on the mounting electrode on the base substrate manufactured by the manufacturing method according to any one of Application Examples 4 to 6, and a lid for housing the electronic component. Joining the base substrate and sealing the electronic component. A method for manufacturing an electronic device, comprising:

  By the above-described method, for the same reason as in application examples 1 and 2, it is possible to manufacture an electronic device in which the mounting electrode can be formed small and the airtightness is ensured without increasing the manufacturing process.

It is sectional drawing of the piezoelectric device of this embodiment. It is a top view of the base substrate of this embodiment. It is a bottom view of the base substrate of this embodiment. It is a figure which shows the manufacturing process (the 1) of the base substrate of this embodiment. It is a figure which shows the manufacturing process (the 2) of the base substrate of this embodiment. It is sectional drawing of the modification of the piezoelectric device of this embodiment. It is a top view of the modification of the base substrate of this embodiment. It is sectional drawing of the modification of the through-hole of this embodiment. It is sectional drawing of modifications, such as a penetration electrode of this embodiment. 6 is a schematic diagram of a piezoelectric device described in Patent Document 1. FIG. 6 is a schematic diagram of a piezoelectric device described in Patent Document 2. FIG.

  Hereinafter, the present invention will be described in detail with reference to embodiments shown in the drawings. However, the components, types, combinations, shapes, relative arrangements, and the like described in this embodiment are merely illustrative examples and not intended to limit the scope of the present invention only unless otherwise specified. .

  FIG. 1 shows a cross-sectional view of the piezoelectric device of the present embodiment. 2 shows a plan view of the base substrate of the present embodiment, and FIG. 3 shows a bottom view of the base substrate of the present embodiment.

  The piezoelectric device 10 (electronic device) of the present embodiment is bonded to the base substrate 12, the piezoelectric vibrating piece 32 mounted on the base substrate 12, the base substrate 12, and the piezoelectric vibrating piece 32 (electronic component) is hermetically sealed. And a cap 40 to be stopped.

  The piezoelectric vibrating piece 32 is formed of a piezoelectric material such as quartz, and a tuning fork type vibrating piece, a double tuning fork type vibrating piece, a thickness shear vibrating piece using an AT-cut quartz substrate, a SAW resonance piece, a gyro vibrating piece, or the like can be applied. . The piezoelectric vibrating piece 32 is bonded to the base substrate 12 by a conductive adhesive 38 to be a fixed end, and the distal end 36 is a free end, and is supported by the base substrate 12 in a cantilevered state.

  Although not shown in detail, the vibrating portion of the piezoelectric vibrating piece 32 is provided with a pair of excitation electrodes that vibrate the vibrating portion at a specific resonance frequency. In addition, an extraction electrode is extracted from each excitation electrode, and each extraction electrode extends to the lower surface of the base end 34 of the piezoelectric vibrating piece 32.

  The base substrate 12 is formed of an insulating substrate such as ceramic, and includes a mounting surface 14 on which the piezoelectric vibrating piece 32 is mounted, a mounting surface 16 that is the back surface of the mounting surface 14 and is bonded to a mounting destination substrate (not shown), Have

  The base substrate 12 is provided with a through hole 18 (see FIG. 4B). The through hole 18 (18A, 18B) has an inner wall whose cross-sectional shape in the thickness direction of the base substrate 12 is circular, and a tapered wall surface whose inner diameter monotonically decreases from the mounting surface 14 to the mounting surface 16. have. Therefore, in the through hole 18, the inner diameter of the opening on the mounting surface 16 side is smaller than the inner diameter of the opening on the mounting surface 14 side.

  This through hole 18 is formed from the mounting surface 14 side by grinding laser irradiation or sandblasting. Laser irradiation and sandblasting process the base substrate 12 not only in the depth direction of the base substrate 12 but also in a direction parallel to the substrate surface. Therefore, when laser irradiation and sand blasting are performed from the mounting surface 14 side, the mounting surface 14 side is processed in the parallel direction more than the mounting surface 16 side. As a result, the inner diameter on the mounting surface 16 side is the mounting surface 16 side. A tapered through hole 18 that is smaller than the inner diameter on the 14 side is formed.

  In the present embodiment, the through holes 18 are provided at two locations on the diagonal line of the base substrate 12 in plan view. Among these, the through hole 18A is provided at a position directly below the above-described extraction electrode (not shown). The through hole 18B is provided at a position on the tip 36 side of the piezoelectric vibrating piece 32.

  A through electrode 20 (20A, 20B) is embedded in the through hole 18. The through electrode 20 has an outer shape that follows the inner wall of the through hole 18 and is exposed on the mounting surface 14 side and the mounting surface 16 side. Therefore, the diameter of the portion exposed to the mounting surface 16 of the through electrode 20 is smaller than the diameter of the portion exposed to the mounting surface 14 of the through electrode 20 (see FIGS. 2 and 3).

  On the mounting surface 14 of the base substrate 12, mounting electrodes 22 (22A, 22B) are provided. The mounting electrode 22 is provided at a position facing an extraction electrode (not shown) extracted on the lower surface of the piezoelectric vibrating piece 32. Among these, the mounting electrode 22A is provided so as to cover a portion exposed to the mounting surface 14 of the through electrode 20A. A conductive adhesive 38 is applied onto the mounting electrode 22A, and the conductive adhesive 38 is joined to one of the extraction electrodes (not shown) of the piezoelectric vibrating piece 32, whereby the mounting electrode 22A and the extraction electrode ( (Not shown) is electrically connected.

  On the other hand, a connection electrode 24 is provided at a position exposed on the mounting surface 14 of the through electrode 20B. The lead-out electrode 22Ba extends from the mounting electrode 22B (FIG. 2) and is connected to the connection electrode 24. A conductive adhesive 38 is applied on the mounting electrode 22B, and this conductive adhesive 38 is joined to the other of the extraction electrodes (not shown), whereby the mounting electrode 22B and the other of the extraction electrodes (not shown) are connected. Electrically connected.

  Mounting electrodes 26 (26A, 26B) are provided at positions where the through electrodes 20 of the mounting surface 16 of the base substrate 12 are exposed. The mounting electrode 26A is provided so as to cover a portion exposed on the mounting surface 16 of the through electrode 20A, and the mounting electrode 26B is provided so as to cover a portion exposed on the mounting surface 16 of the through electrode 20B. However, since the diameter of the portion exposed to the mounting surface 16 of the through electrode 20 is smaller than the portion exposed to the mounting surface 14, the size of the mounting electrode 26 can be designed to be small. Therefore, even if the area of the base substrate 12 is reduced, the degree of freedom of the arrangement pattern of the mounting electrodes 26 is not impaired.

  Of the mounting electrodes 26, the mounting electrode 26 </ b> A is electrically connected to one of the extraction electrodes (not shown) via the through electrode 20 </ b> A, the mounting electrode 22 </ b> A, and the conductive adhesive 38. On the other hand, the mounting electrode 26B (FIG. 3) is electrically connected to the other of the lead electrodes (not shown) through the through electrode 20B, the connection electrode 24, the lead-out electrode 22Ba, the mounting electrode 22B, and the conductive adhesive 38. . Therefore, when an AC voltage is applied to the mounting electrode 26, the vibrating portion (not shown) of the piezoelectric vibrating piece 32 vibrates at a specific resonance frequency.

  The mounting electrode 26 is joined to a connection electrode (not shown) provided on a mounting destination substrate (not shown). In the present embodiment, it is sufficient to provide two mounting electrodes 26 on the mounting surface 16, but a dummy electrode 28 having the same shape as the mounting electrode 26 is provided on the mounting surface 16 in order to stably join the mounting electrode 26. The dummy electrode 28 is bonded to an electrode (not shown) of a mounting board (not shown).

  A seed electrode 30 is provided on the inner wall of the through hole 18, the formation position of the mounting electrode 22, the formation position of the mounting electrode 26, and the like. The seed electrode 30 is formed by sputtering or the like as will be described later, and is used as an electrode for plating. The through electrode 20, the mounting electrode 22, the routing electrode 22 Ba, the connection electrode 24, and the mounting electrode 26 are grown on the seed electrode 30. The various electrodes are made of a metal having high conductivity such as Cu (copper).

  The cap 40 (lid body) is made of metal and has a recess having an open bottom surface, and the piezoelectric vibrating piece 32 can be accommodated in the recess. By joining the lower surface of the cap 40 to the mounting surface 14, the piezoelectric vibrating piece 32 is accommodated and the piezoelectric vibrating piece 32 is hermetically sealed (vacuum sealed).

  Although not shown in detail, a through electrode is provided at a position corresponding to the dummy electrode 28 of the base substrate 12, a connection electrode is provided at a position exposed on the mounting surface 14 of the through electrode, and the connection electrode is connected to the cap 40. You may do it. As a result, the dummy electrode 28 is grounded and the cap 40 is grounded, so that external electrical interference with the piezoelectric vibrating piece 32 can be avoided.

  4 and 5 show the manufacturing process of the base substrate of this embodiment. Next, the manufacturing process of the base substrate 12 of this embodiment is demonstrated. As shown in FIG. 4A, a substrate base material 42 having the same dimensions as the base substrate 12 is prepared, and as shown in FIG. 4B, laser irradiation or from the side that becomes the mounting surface 14 of the substrate base material 42 is performed. A tapered through hole 18 is formed by sandblasting.

  As shown in FIG. 4C, a seed electrode 30 of a metal such as Cu (copper) is formed on the surface of the substrate base material 42 using a method such as sputtering. At this time, since the through hole 18 is tapered, the seed electrode 30 can be easily formed on the inner wall of the through hole 18 even if sputtering is used. In FIG. 4C, it is assumed that all the seed electrodes 30 are connected.

  As shown in FIG. 4D, the through electrode 20 on the seed electrode 30, the mounting electrode 22, the routing electrode 22Ba (not shown in FIG. 4), the connection electrode 24 (not shown in FIG. 4), the mounting electrode 26, a dummy A resist film 44 is formed except for the position corresponding to the electrode 28.

  As shown in FIG. 4E, the substrate base material 42 on which the seed electrode 30 and the resist film 44 are formed is put into an electrolytic solution of a metal plating material such as Cu (copper) and an electric field is applied to the seed electrode 30. . At this time, the seed electrode 30 is exposed at a portion other than the electrode formation portion, and an electric field application cable (not shown) is connected to the portion. Then, the electrode material grows in the portion where the seed electrode 30 is exposed. In FIG. 4E, since the electrode material forming the through electrode 20 is still thin, the mounting surface 14 side and the mounting surface 16 side of the through electrode 20 are still open. Still has a hole in the center.

  As shown in FIG. 5A, when the growth of the electrode material proceeds, the opening portion on the mounting surface 16 side of the through electrode 20 is closed, and the hole in the central portion of the mounting electrode 26 is also closed. However, the recess 46 opened at the center of the mounting electrode 22 remains.

  As shown in FIG. 5 (b), when the growth of the electrode material proceeds more than in the case of FIG. 5 (a), the through hole 18 begins to be filled with the electrode material forming the through electrode 20, and the diameter and depth of the recess 46 are obtained. Is getting smaller.

As shown in FIG. 5C, when the growth of the electrode material proceeds more than in the case of FIG. 5B, the through hole 18 is completely filled with the electrode material forming the through electrode 20, and the recess 46 disappears.
Then, as shown in FIG. 5D, the resist film 44 is removed, and as shown in FIG. 5E, portions other than the portion where the electrode material of the seed electrode 30 is grown are removed by etching or the like. Thus, the base substrate 12 is obtained.

  A conductive adhesive 38 is applied to the mounting electrodes 22A and 22B of the base substrate 12, and the piezoelectric vibrating piece 32 is supported on the base substrate 12 in such a manner that the conductive adhesive 38 and an extraction electrode (not shown) are joined together, and a vacuum environment The piezoelectric device 10 is obtained by bonding the cap 40 to the mounting surface 14 below.

  In the method for manufacturing the base substrate 12 of this embodiment, the through electrode 20, the mounting electrode 22, the lead-out electrode 22Ba, the connection electrode 24, the mounting electrode 26, and the dummy electrode 28 can be integrally formed in a single plating step. The point is a big merit. Therefore, since these electrodes can be formed without increasing the number of manufacturing steps, the cost can be suppressed. Furthermore, since the through electrode 20, the mounting electrode 22, the connection electrode 24, and the mounting electrode 26 are integrally formed, the contact resistance between the electrodes is reduced. Further, since the through hole 18 has a tapered shape as described above, the mounting surface 16 side of the through hole 18 is filled earlier than the mounting surface 14 side, so that the flatness of the mounting electrode 26 can be ensured with a small amount of plating, and high Quality can be improved.

  In the present embodiment, the through electrode 20 has a shape in which the cross-sectional diameter increases from the mounting surface 16 toward the mounting surface 14. Therefore, when the internal space formed by the mounting surface 14 and the cap 40 is in a vacuum, it seems that the through electrode 20 is attracted to the internal space side.

  However, in the present embodiment, the through electrode 20 and the mounting electrode 26 are integrally formed, and the mounting electrode 26 supports the through electrode 20, so that the through electrode 20 is not attracted to the internal space side, and the internal electrode The airtightness of the space is not reduced. Since the mounting electrode 22, the through electrode 20, and the mounting electrode 26 are integrally formed, the manufacturing process is reduced and the cost is reduced, and there is no interface between the electrodes. Airtight destruction can be avoided.

  FIG. 6 shows a cross-sectional view of a modification of the piezoelectric device of the present embodiment, and FIG. 7 shows a plan view of a modification of the base substrate of the present embodiment. The basic configuration of the piezoelectric device 10 </ b> A (electronic device) of the modification is common to the piezoelectric device 10 of FIG. 1, but uses a side wall 48 and a lid 52 (lid) instead of the cap 40. The side wall portion 48 is formed of the same material as the base substrate 12 and has a rectangular ring shape. And the lower surface of the side wall part 48 is joined to the position which becomes the periphery of the mounting surface 14. Therefore, the upper surface of the side wall 48 is higher than the mounting surface 14, and the side wall 48 and the mounting surface 14 form a recess 50 that accommodates the piezoelectric vibrating piece 32.

  The lid 52 is made of metal and is bonded to the upper surface of the side wall portion 48 to hermetically seal the piezoelectric vibrating piece 32. It is to be noted that a through electrode (not shown) that is exposed on the upper surface of the side wall portion 48 and communicates with the side wall portion 48 and the base substrate 12 to be connected to the dummy electrode 28 is formed, and the lid 52 can be grounded via the dummy electrode 28. You may do it.

  The assembly of the piezoelectric device 10 </ b> A according to the modification is a process of joining the side wall 48 to the mounting surface 14, connecting the piezoelectric vibrating piece 32 to the mounting electrodes 22 </ b> A and 22 </ b> B, and then joining the lid 52 to the side wall 48. Therefore, by arranging the piezoelectric vibrating piece 32 inside the side wall portion 48 (recess 50), the possibility of damaging the piezoelectric vibrating piece 32 due to contact or the like when the piezoelectric vibrating piece 32 is hermetically sealed can be avoided.

  FIG. 8 shows a cross-sectional view of a modified example of the through hole of the present embodiment, and FIG. 9 shows a cross-sectional view of a modified example of the through electrode of the present embodiment. In the present embodiment, the through hole 18 has a tapered wall surface whose wall surface is inclined over the entire region in the thickness direction of the base substrate 12. However, the through hole in the present invention only needs to have a tapered wall surface whose inner diameter is smaller on the mounting surface 16 side than on the mounting surface 14 side in at least part of the thickness direction of the base substrate 12. The inner diameter of the opening on the mounting surface 16 side is only required to be smaller than the inner diameter of the opening on the mounting surface 14 side.

  That is, like the through hole 54 of the modified example, the mounting surface 14 side of the base substrate 12 has a cylindrical wall surface 54a, and the mounting surface 16 side also has a cylindrical wall surface 54c. A tapered wall surface 54b may be provided therebetween.

  When the base substrate 12 is formed of ceramic, two recesses having wall surfaces 54a and 54c as wall surfaces are formed using a mold as a sintering material of the base substrate 12 before sintering. After sintering the sintered material, the wall surface 54a is penetrated from the bottom surface of the recess having the wall surface 54a to the bottom surface of the recess having the wall surface 54c by laser irradiation or sandblasting, and the wall surface 54c is separated from the wall surface 54c. The through hole 54 can be formed by forming 54b. Alternatively, the through hole 54 can be formed by pressing a mold for forming the wall surfaces 54a, 54b, 54c using a mold against the sintered material of the base substrate 12 before sintering and sintering the sintered material.

  As shown in FIG. 9, the seed electrode 30 is arranged on the both surfaces of the base substrate 12 including the wall surface of the through hole 54 and the through hole 54, and the through electrode 56, the mounting electrode 22, The mounting electrode 26 can be formed integrally. When the seed electrode 30 is formed by sputtering, the seed electrode 30 is formed on the wall surfaces 54a and 54c by performing control such as changing the orientation of the base substrate 12 with respect to the sputtering target during the formation of the seed electrode 30. Is possible. The growth process of the plating on the sputtered base substrate is the same as that shown in FIGS. The operational effects of the integrally formed through electrode 56, the mounting electrode 22, and the mounting electrode 26 are the same as the operational effects of the integrally formed through electrode 20, the mounting electrode 22, and the mounting electrode 26 as described above. It is.

  In the present embodiment, it has been described that the through electrode 20, the mounting electrode 22, and the mounting electrode 26 are integrally formed. However, as long as the bonding strength between the electrodes can be maintained, or the contact resistance between the electrodes is small enough to be ignored. These electrodes may be formed in separate steps instead of being integrated.

DESCRIPTION OF SYMBOLS 10 ......... Piezoelectric device, 12 ......... Base substrate, 14 ......... Mounting surface, 16 ......... Mounting surface, 18, 18A, 18B ......... Through hole, 20 ...... Through electrode, 22, 22A, 22B ......... Mounting electrode, 24 ......... Connecting electrode, 26 ......... Mounting electrode, 28 ......... Dummy electrode, 30 ......... Seed electrode, 32 ......... Piezoelectric vibrating piece, 34 ......... Base end, 36 ......... Tip, 38 ......... Conductive adhesive, 40 ......... Cap, 42 ......... Substrate base material, 44 ...... Resist film, 46 ......... Recess, 48 ......... Side wall, 50 ......... Recess, 52 ......... Lid, 54 ......... Through hole, 56 ......... Penetration electrode, 100 ......... Piezoelectric device, 102 ......... Base substrate, 104 ......... Cap, 106 ......... Piezoelectric Vibrating piece 108... Through hole 110... Through electrode 112. ......... conductive adhesive, 200 ......... piezoelectric device, 202 ......... through hole, 204 ......... electrode, 206 ......... alloy.

Claims (3)

A through-hole penetrating the insulating substrate, wherein at least a part of the through-hole in the thickness direction of the insulating substrate has a wall surface having a tapered shape with an inner diameter on the other surface side smaller than the one surface side of the insulating substrate Forming the through hole by forming an inner diameter of the opening on the other surface side smaller than an inner diameter of the opening on the one surface side; and
A step of integrally forming a through electrode provided in the through hole, a mounting electrode for mounting an electronic component on the one surface, and a mounting electrode provided on the other surface by plating ;
A method for manufacturing a base substrate, comprising: The method for manufacturing a base substrate according to claim 1 , wherein the step of forming the through hole is performed by laser or sand blasting. Disposing an electronic component on the mounting electrode on the base substrate manufactured by the manufacturing method according to claim 1 ,
Bonding the lid for housing the electronic component to the base substrate and sealing the electronic component;
The manufacturing method of the electronic device characterized by the above-mentioned.

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