JP5807226B2 - Vibration element and method for manufacturing vibration element - Google Patents

Description

  The present invention relates to a vibration element including a substrate-side electrode provided on one surface of an insulating substrate and a counter plate having a counter electrode disposed to face the substrate-side electrode, and a method for manufacturing the vibration element.

  FIG. 1 is a cross-sectional view showing an example of the configuration of a conventional CMUT (Capacitive Micromachined Ultrasonic Transducer) type ultrasonic transducer. A conventional CMUT type ultrasonic transducer includes a substrate 104, a vibration film 105 that transmits and receives ultrasonic waves, and a vibration film support unit 101 that is provided on one surface of the substrate 104 and supports the vibration film 105 so as to face the substrate 104. And. Further, the film side electrode 102 formed on the vibration film 105 and the substrate side electrode 103 formed on the substrate 104 are disposed to face each other.

  In the CMUT type ultrasonic vibrator having such a configuration, the vibration film 105 and the film side electrode 102 vibrate due to the received ultrasonic wave (sound pressure), and the film side electrode 102 and the substrate side electrode 103 generated at this time are vibrated. Based on the capacitance change, the vibration film 105 is vibrated by acquiring an electrical signal related to the received ultrasonic wave or applying a DC and AC voltage between the film side electrode 102 and the substrate side electrode 103 to generate an ultrasonic wave. , And has excellent frequency response characteristics such as wide band and high sensitivity.

  For example, Non-Patent Document 1 discloses such a conventional CMUT type ultrasonic transducer and a manufacturing method thereof. In the CMUT type ultrasonic vibrator of Non-Patent Document 1, a nitride layer is formed on a silicon substrate to protect the substrate during wet etching described later, and polycrystalline silicon is formed on the nitride layer. A so-called sacrificial layer is deposited. After that, the vibration film made of nitride and the vibration film support portion are vapor-deposited on the sacrificial layer, a hole for removing the sacrificial layer is formed in the vibration film, and the sacrificial layer is removed by wet etching. To do. Subsequently, the hole is filled and a film-side electrode is deposited on the vibration film, and then a protective layer is formed thereon.

“Capacitive Micromachined Ultrasonic Transducers: Theory and Technology”, JOURNAL OF AEROSPACE ENGINEERING, USA, April, VOL.16, NO.2, p.76-84

  On the other hand, in the conventional ultrasonic vibration element as described above, various problems have occurred in actual use. Specifically, when the ultrasonic vibration element is used at a high frequency, the impedance increases (for example, several ㏀), and thereby the drive voltage actually applied to the electrode is reduced compared to the input voltage. There was a problem. In addition, in an array including a plurality of ultrasonic vibration elements, when the number of vibration elements is small, problems such as an increase in impedance due to a small basic capacitance in the array and a decrease in S / N ratio occur. It was.

  Since a signal from a device equipped with the above ultrasonic vibration element or array appears as a change in capacitance, a conversion circuit that converts this signal into a voltage signal and an amplification circuit for the signal are necessary. Such a circuit has been provided separately. However, in the ultra-compact device, it is difficult to secure a space where such peripheral circuits can be installed efficiently, and even if there is a space, the process for mounting etc. is complicated, so the productivity of the entire system is reduced. It was the cause.

  Furthermore, when a silicon single crystal is used as the substrate, there is a problem that the conversion efficiency of the device is lowered because so-called parasitic capacitance is generated due to the conductivity of the silicon single crystal. However, the above-described ultrasonic transducer of Non-Patent Document 1 cannot solve such a problem.

  This invention is made | formed in view of such a situation, The place made into the objective has the board | substrate side electrode provided in one surface of the insulating substrate, and the counter electrode arrange | positioned facing this board | substrate side electrode. A vibration element including a counter plate, which can improve an increase in impedance, and can reduce the element itself, and thus a device including the element and a mounting system including the device, and the vibration element. It is in providing the manufacturing method which manufactures.

A vibration element according to the present invention includes a substrate-side electrode provided on one surface of an insulating substrate, and a counter plate having a counter electrode disposed to face the substrate-side electrode, and the substrate side by deformation of the counter plate In the vibration element that emits a signal based on a change in the distance between the electrode and the counter electrode, the counter plate is made of a silicon single crystal and includes an integrated circuit unit that performs processing related to the signal.

  The vibration element according to the present invention is characterized in that the integrated circuit portion is an impurity region and is electrically connected to the counter electrode.

  The vibration element according to the present invention includes a holding portion that protrudes from the substrate and holds the counter plate, and the integrated circuit portion is provided at a position aligned with the holding portion.

  The vibration element according to the present invention is characterized in that the counter plate is provided on one surface of the counter plate facing the substrate and in contact with the holding portion.

A method for manufacturing a resonator element according to the present invention includes a substrate-side electrode provided on one surface of an insulating substrate, and a counter plate having a counter electrode disposed to face the substrate-side electrode, and is based on deformation of the counter plate. In the method of manufacturing a vibrating element that emits a signal based on a change in the distance between the substrate-side electrode and the counter electrode, an integrated circuit unit forming step of forming an integrated circuit unit that performs processing related to the signal on a counter plate made of a silicon single crystal. It is characterized by that.

  In the method for manufacturing a vibration element according to the present invention, the integrated circuit portion is an impurity region, and is electrically connected to the counter electrode.

  The method for manufacturing a vibration element according to the present invention is characterized in that the counter electrode is formed together in the integrated circuit portion forming step.

  In the present invention, a counter plate made of silicon single crystal is disposed so as to face the substrate-side electrode, and the counter plate is provided with the integrated circuit portion to perform signal processing necessary for the vibration element. . For example, the integrated circuit portion performs functions such as impedance reduction, capacitance conversion, and signal amplification.

  In the present invention, the integrated circuit portion is an impurity region of an IC circuit formed by, for example, a thermal diffusion method or an ion implantation method, and is electrically connected to the counter electrode and necessary for the device. Perform signal processing. For example, the integrated circuit portion performs functions such as impedance reduction, capacitance conversion, and signal amplification.

  In the present invention, the integrated circuit portion is provided at a position where the counter plate is aligned with the holding portion that holds the counter plate.

  In the present invention, the integrated circuit portion can be provided, for example, at a contact position of the counter plate with the holding unit that holds the counter plate.

  According to the present invention, it is possible to improve impedance rise, capacitance conversion, amplification, and the like by the integrated circuit unit, and the electrical characteristics of the vibration element are enhanced. In addition, since the integrated circuit portion is an impurity region formed in the counter plate, no separate element is attached for the effect, so the element itself, a device having the element, and a mounting including the device The system can be made compact and the productivity can be improved.

  Further, according to the present invention, when the integrated circuit portion is formed, other peripheral circuits such as a counter electrode are also formed, so that the manufacturing process is shortened and the manufacturing cost can be reduced.

It is sectional drawing which shows an example of a structure of the conventional CMUT type | mold ultrasonic transducer | vibrator. It is the partial schematic diagram which looked at the vibration element array which concerns on Embodiment 1 of this invention from the Z-axis direction. It is sectional drawing by the AB line | wire of FIG. FIG. 3 is a schematic cross-sectional view of the main part for explaining the configuration of the resonator element according to the first embodiment of the invention. It is explanatory drawing explaining the manufacturing method of the vibration element and vibration element array which concern on Embodiment 1 of this invention. It is explanatory drawing explaining the manufacturing method of the vibration element and vibration element array which concern on Embodiment 1 of this invention. It is explanatory drawing explaining the manufacturing method of the vibration element and vibration element array which concern on Embodiment 1 of this invention. It is a typical principal part sectional view for demonstrating the structure of the vibration element which concerns on Embodiment 2 of this invention.

Hereinafter, a vibration element and a method of manufacturing the vibration element according to the present invention will be specifically described with reference to the drawings. The description will be given by taking a vibration element array including a plurality of the vibration elements as an example.
(Embodiment 1)
2 is a partial schematic view of the resonator element array according to Embodiment 1 of the present invention viewed from the Z-axis direction, and FIG. 3 is a cross-sectional view taken along the line AB of FIG. In the figure, 10 is a vibration element according to the present invention, and 100 is a vibration element array including a plurality of vibration elements 10. In the following description, for convenience of description, the Z-axis direction will be described as the vertical direction.

  In the vibration element array 100, a plurality of vibration elements 10 are arranged in parallel in the X-axis direction and the Y-axis direction on a single substrate 3. The vibration element array 100 converts the ultrasonic wave received by each vibration element 10 into an electric signal and transmits the electric signal to an external device, and the external device performs image data based on the electric signal from the vibration element array 100 (vibration element 10). Is generated.

  FIG. 4 is a schematic cross-sectional view of an essential part for explaining the configuration of the resonator element 10 according to the first embodiment of the invention.

  The vibration element 10 of the vibration element array 100 according to Embodiment 1 of the present invention includes a substrate 3 and an upper plate 1 disposed on the upper side of the substrate 3 so as to face the substrate 3. A recess 32 is formed on the upper surface of the substrate 3 facing the lower surface of the upper plate 1, and the substrate-side electrode 2 is provided on the bottom of the recess 32.

  The upper plate 1 is aligned with a vibrating membrane portion 11 that vibrates during transmission or reception of ultrasonic waves, and a contact portion 12 that is aligned with a position of a holding portion 31 described later in the Z-axis direction and is in contact with the holding portion 31. Have The upper plate 1 is fixed to the substrate 3 by joining the lower surface of the contact portion 12 to the upper end portion of the holding portion 31.

  The vibration film part 11 is a part of the upper plate 1 corresponding to a position facing the substrate side electrode 2, and the vibration film parts 11 adjacent to each other are formed with the contact part 12 interposed therebetween. That is, the vibration film portion 11 is surrounded by the contact portion 12 and the contact portion 12 is joined to the holding portion 31, so that vibration is possible.

  The substrate 3 is made of glass such as Pyrex glass (registered trademark), quartz, Tenbax (registered trademark), or Foturan glass (registered trademark), and has a thickness of 500 μm or more, for example. Further, as described above, the concave portion 32 is formed on the upper surface of the substrate 3, and the substrate-side electrode 2 is deposited at the center of the bottom of the concave portion 32.

  In addition, the thickness of the board | substrate 3 is not restricted to the above-mentioned description, The board | substrate of the range of 1 micrometer-10 cm is included. For example, it may be 300 μm or more and 500 μm or less.

  The recess 32 is recessed on the upper surface of the substrate 3 so as to have a hexagonal shape in plan view. Between the concave portions 32 of the respective vibration elements 10, lands are formed which are formed by the remaining portions due to the concave portions 32, and the lands serve as the holding portions 31 that hold the upper plate 1. That is, the upper plate 1 (contact portion 12) is held on the substrate 3 by being joined to the upper end surface of the holding portion 31.

The substrate-side electrode 2 has a hexagonal plate shape that follows the recess 32, and has an area of, for example, 700 μm ² or less. Moreover, the thickness of the substrate side electrode 2 is 0.1-1.0 micrometer, for example, and consists of materials, such as Ni, Cr, Al, Pt, Au. In addition, an insulating film (not shown) made of, for example, an oxide and insulating the upper plate 1 (vibrating film portion 11) and the substrate side electrode 2 is deposited on the upper surface of the substrate side electrode 2.

  The inside of the recessed part 32 has comprised the cylinder shape which is a cross-sectional view hexagon, for example. The dimension of one side of the hexagon is 22 μm, and the distance between the opposing sides is 38 μm. Moreover, the shape of the recessed part 32 is not restricted to a hexagonal cylinder shape, A circular cylinder shape may be sufficient.

  The dimension in the vertical direction of the holding portion 31, in other words, the distance between the lower surface of the upper plate 1 and the upper surface of the substrate 3 is, for example, 0.05 to 10 μm. More desirably, the thickness is 0.1 to 3 μm. Moreover, the dimension in the horizontal direction, ie, thickness, is the holding | maintenance part 31, for example, is 8-16 micrometers. The contact portion 12 of the upper plate 1 is bonded to the upper surface of the holding portion 31, in other words, the upper surface of the substrate 3 by a so-called anodic bonding method.

  The anodic bonding method is generally a method in which glass and silicon or metal are closely bonded at about 400 ° C. or less. This is a method in which glass and silicon or metal are superposed and heated and a voltage is applied. By this, the cations in the glass are forcibly diffused into the silicon or metal, and are statically placed between the glass, silicon, and metal. This is a method in which an attractive force is generated and chemical bonding is performed, so that good bonding can be achieved even at a relatively low temperature.

  Therefore, the resonator element 10 according to the first embodiment of the present invention can suppress the occurrence of stress concentration due to deformation that tends to occur in the bonding process at a high temperature at the bonded portion between the holding portion 31 and the upper plate 1. In addition, it is possible to prevent the conversion efficiency or sensitivity from being lowered due to the influence of the stress on the vibration film portion 11, and the structure reproducibility in manufacturing is excellent.

  In this Embodiment, although the case where the thickness of the holding part 31 is 8-16 micrometers is mentioned as an example, it is not restricted to this, For example, what is necessary is just 1-16 micrometers.

  The upper plate 1 is provided so as to face the substrate 3 and cover the recess 32. Accordingly, a space is formed by the inner peripheral surface of the recess 32 and the lower surface of the upper plate 1.

  The thickness of the upper plate 1 is, for example, 1.5 μm, but is not limited thereto, and may be 0.5 to 3 μm. The upper plate 1 is made of, for example, a silicon single crystal having a resistance value of 10,000 Ωcm or more. Therefore, in the vibration element 10 and the vibration element array 100 according to the first embodiment of the present invention, charges are accumulated in the vibration film unit 11 when a voltage is applied, and the vibration film part 11 by applying an AC voltage of several to several tens of MHz. It is possible to prevent the charging phenomenon from occurring in the operation of.

  A counter electrode 4 corresponding to the substrate side electrode 2 is formed on the lower surface of the vibration film portion 11. The counter electrode 4 is an impurity region formed directly above the substrate side electrode 2. The counter electrode 4 is formed in a range having a circular shape in plan view, and is, for example, a so-called conductive impurity region formed by thermal diffusion or ion implantation of an N-type or P-type element.

  For example, the integrated circuit portion 5 is formed on the lower surface of the contact portion 12. The integrated circuit unit 5 is an impurity region formed at a position facing the upper surface of the holding unit 31. Specifically, the integrated circuit unit 5 is arranged at such a position on the upper plate 1, for example, As, P, Sb, etc., which are Group 5 (N-type), or Al, B, which are Group 3 (P-type). This is an IC circuit formed by thermal diffusion or ion implantation of an element such as Ga.

  The formation position of the integrated circuit portion 5 is not limited to the lower surface of the contact portion 12. It may be anywhere on the upper plate 1 as long as it is outside the region related to the counter electrode 4.

  The integrated circuit unit 5 is formed so as to serve as, for example, a variable capacitor, a resistor, a capacitor, or the like that reduces impedance. The integrated circuit unit 5 is electrically connected to the counter electrode 4, reduces the impedance generated in the vibration element 10 or the vibration element array 100, and performs functions such as capacitance conversion and signal amplification.

  Since the vibration element 10 according to the first embodiment of the present invention has the integrated circuit portion 5 as described above, there is a problem of an increase in impedance at a high frequency, and a problem that the impedance increases when the number of vibration elements is small. Furthermore, when a silicon single crystal is used as the vibration film, it is possible to prevent a problem that the so-called parasitic capacitance is generated and the efficiency is lowered.

  Moreover, since the vibration element 10 according to the first embodiment of the present invention is the impurity region in which the integrated circuit portion 5 is formed in the contact portion 12 as described above, the peripheral circuit for impedance reduction and signal processing Therefore, the element itself and the device can be made compact without affecting the vibration of the vibration film portion 11.

  In addition, since the counter electrode 4 and the integrated circuit unit 5 are formed on the lower surface of the upper plate 1 in the resonator element 10 according to the first embodiment of the present invention, the counter electrode 4 and the integrated circuit unit 5 are protected. No protective film is required.

  In the vibration element 10 according to Embodiment 1 of the present invention, the counter electrode 4 is formed as an impurity region on the upper plate 1, and a part of the upper plate 1 (the vibration film portion 11) is a so-called vibration film. Since this also serves as a role, it is possible to further reduce the size of the device.

  In the vibration element array 100 according to Embodiment 1 of the present invention, a voltage is applied between the substrate-side electrode 2 of the plurality of vibration elements 10 and the counter electrode 4 of the upper plate 1 corresponding to the substrate-side electrode 2. Thus, the vibration film unit 11 is vibrated to transmit an ultrasonic wave to the outside, and between the substrate side electrode 2 and the counter electrode 4 due to the vibration of the vibration film unit 11 by the ultrasonic wave reflected from the outside. An electric signal related to the change in capacitance can be obtained, and a so-called ultrasonic image can be obtained based on the electric signal.

  Hereinafter, a method for manufacturing the vibration element 10 and the vibration element array 100 according to Embodiment 1 of the present invention will be described. 5-7 is explanatory drawing explaining the manufacturing method of the vibration element 10 and the vibration element array 100 which concern on Embodiment 1 of this invention.

  First, with respect to the upper plate 1 side, as shown in FIG. 5A, thermal diffusion or ion implantation is performed on one surface of an SOI (Silicon On Insulator) wafer W to become the counter electrode 4 and the integrated circuit unit 5 respectively. Impurity regions are formed (integrated circuit portion forming step). That is, in the method for manufacturing the resonator element according to the first embodiment of the present invention, since the counter electrode 4 and the integrated circuit portion 5 are formed simultaneously, the manufacturing process can be shortened and the manufacturing cost can be reduced.

  On the other hand, on the substrate 3 side, as shown in FIG. 5B, patterning is performed on the upper surface of the Pyrex glass substrate 3 to form a recess 32. Further, when the substrate 3 is patterned, the holding portion 31 is also formed.

  Next, a deposit (for example, Ni, Cr, Al, Pt, Au, etc.) to be the substrate side electrode 2 is deposited. In addition, a step of depositing an insulating film (not shown) for insulating the substrate side electrode 2 from the counter electrode 4 may be provided.

  Next, the SOI wafer W is turned upside down so that the one surface of the SOI wafer W faces the upper surface of the substrate 3 (see FIG. 5B) that has already been prepared (or the bottom of the recess 32). The SOI wafer W is fixed to the upper surface of the substrate 3, that is, the upper surface of the holding unit 31. Specifically, the one surface of the SOI wafer W is bonded to the upper surface of the holding unit 31 by the anodic bonding method described above. (See Figure 6)

  Thereafter, as shown in FIG. 7, the other surface side of the SOI wafer W, that is, the upper Si layer and the oxide layer is wet-etched using TMAH, KOH, HF, etc. The upper plate 1 is completed by performing display) and removing only the portion to be the upper plate 1.

However, the present invention is not limited to this, and a Si wafer having a Si / Si ₃ N ₄ (low stress) configuration may be used instead of the SOI wafer.

  In the method for manufacturing a vibration element according to the present invention, as described above, it is not necessary to separately provide a so-called vibration film holding portion for holding the upper plate 1 (vibration film portion 11). In addition, it is not necessary to consider the stress concentration at the fixing portion that occurs when the vibrating membrane holding portion is fixed to the substrate 3, and the degree of freedom in manufacturing is expanded.

  In the following, the operation of the vibration element 10 and the vibration array 100 according to Embodiment 1 of the present invention will be described. For convenience of explanation, as described above, an example is described in which a voltage is applied to the vibration element 10 and the vibration array 100 to transmit ultrasonic waves toward the object and receive ultrasonic waves reflected from the object. Will be described.

  When the vibration element 10 of the vibration element array 100 according to Embodiment 1 of the present invention receives the ultrasonic wave reflected from the object, the vibration film unit 11 vibrates by the ultrasonic wave (sound pressure). When the vibration film unit 11 vibrates, the distance between the vibration film unit 11 and the substrate-side electrode 2 of the substrate 3 varies. Accordingly, the capacitance between the counter electrode 4 formed on the lower surface of the vibration film portion 11 and the substrate side electrode 2 changes. Based on the capacitance change between the counter electrode 4 and the substrate side electrode 2, the capacitance change can be converted into a voltage change signal to obtain an electrical signal. Based on the obtained electrical signal, the subject An ultrasonic image of an object can be obtained.

  Further, in the transmission of ultrasonic waves, by applying DC and AC voltages between the counter electrode 4 and the substrate side electrode 2, the vibration film unit 11 is vibrated and ultrasonic waves are transmitted. The other operations are the same as when ultrasonic waves are received, and detailed description thereof is omitted.

  (Embodiment 2)

  FIG. 8 is a schematic cross-sectional view of an essential part for explaining the configuration of the resonator element 10 according to the second embodiment of the invention.

  The vibration element 10 of the vibration element array 100 according to Embodiment 2 of the present invention includes a substrate 3 and an upper plate 1 disposed on the upper side of the substrate 3 so as to face the substrate 3. A recess 32 is formed on the upper surface of the substrate 3 facing the lower surface of the upper plate 1, and the substrate-side electrode 2 is provided on the bottom of the recess 32.

  The upper plate 1 includes a vibrating membrane portion 11 that transmits or receives ultrasonic waves, and a contact portion 12 that is aligned with the holding portion 31 and contacts the holding portion 31. The upper plate 1 is fixed to the substrate 3 by bonding the lower surface of the contact portion 12 to the upper surface of the holding portion 31.

  The vibration film portion 11 is a portion of the upper plate 1 that faces the substrate side electrode 2, and the vibration film portions 11 adjacent to each other are formed with the contact portion 12 interposed therebetween. That is, the vibration film portion 11 is surrounded by the contact portion 12 and the contact portion 12 is joined to the holding portion 31, so that vibration is possible.

  The upper plate 1 is provided so as to face the substrate 3 and cover the recess 32. The thickness of the upper plate 1 is, for example, 1.5 μm, but is not limited thereto, and may be 0.1 to 10 μm. The upper plate 1 is made of, for example, a silicon single crystal having a resistance value of 10,000 Ωcm or more. Therefore, in the vibration element 10 and the vibration element array 100 according to the second embodiment of the present invention, charges accumulate in the vibration film when a voltage is applied, and in the operation of the vibration film by applying an AC voltage of several to several tens of MHz, It is possible to prevent the charging phenomenon from occurring.

  A counter electrode 4 is formed on the upper surface of the vibration film portion 11. The counter electrode 4 is an impurity region formed directly above the substrate side electrode 2. The counter electrode 4 has a circular shape in a plan view, and is a so-called conductive impurity region formed by thermal diffusion or ion implantation of an element of N type or P type, for example.

  An integrated circuit portion 5 is formed on the upper surface of the contact portion 12. The integrated circuit unit 5 is an impurity region formed at a position aligned with the upper surface of the holding unit 31. Specifically, the integrated circuit unit 5 is arranged at such a position on the upper plate 1, for example, As, P, Sb, etc., which are Group 5 (N-type), or Al, B, which are Group 3 (P-type). This is an IC circuit formed by thermal diffusion or ion implantation of an element such as Ga.

  The integrated circuit unit 5 is formed so as to serve as, for example, a variable capacitor, a resistor, a capacitor, or the like that reduces impedance. The integrated circuit unit 5 is electrically connected to the counter electrode 4 and reduces impedance generated in the vibration element 10 and the vibration element array 100. The integrated circuit unit 5 also plays a role of capacitance conversion, signal amplification, and the like.

  The configuration of the resonator element 10 according to the second embodiment of the invention is not limited to the above description, and a protective film for protecting the counter electrode 4 and the integrated circuit unit 5 is formed on the upper surface of the upper plate 1. It may be the configuration.

  In addition, since the vibration element 10 according to the second embodiment of the present invention is the impurity region in which the integrated circuit portion 5 is formed in the contact portion 12 as described above, the impedance is reduced as in the first embodiment. Therefore, it is not necessary to additionally attach the constituent elements for this purpose, and the apparatus can be made compact without affecting the vibration of the vibration film portion 11.

  In the vibration element 10 according to the second embodiment of the present invention, the counter electrode 4 is formed as an impurity region on the upper plate 1, and the upper plate 1 also serves as the vibration film portion 11. As in the first embodiment, the device can be further downsized.

  About another structure, it is the same as that of Embodiment 1, About the part similar to Embodiment 1, the same code | symbol is attached | subjected and detailed description is abbreviate | omitted.

  In the above description of the embodiment, the case where the counter electrode 4 is separately provided on the upper plate 1 has been described as an example. However, the present invention is not limited to this, and the upper plate 1 also serves as the counter electrode 4. The configuration as described above may be used.

  Furthermore, the configurations of the vibration element 10 and the vibration element array 100 according to the present invention are not limited to the above description. For example, in the above description, the case where the integrated circuit unit 5 is formed only on the upper plate 1 has been described as an example. However, a part of the integrated circuit unit 5 may be formed in the holding unit 31. In other words, the upper plate 1 and the holding portion 31 may be formed with impurity regions, and these impurity regions may constitute a single integrated circuit portion 5 as a whole.

  Further, even when the impurity region is formed in the upper plate 1 or the holding portion 31, it may be formed at a plurality of locations on the upper plate 1 or a plurality of locations on the holding portion 31 instead of one location.

  In the case where impurity regions are formed at a plurality of locations of the holding portion 31, the holding portion 31 is configured to have a multilayer structure in the facing direction of the upper plate 1 and the substrate 3, and the impurity regions are formed in each layer. It may be a configuration.

1 Upper plate (opposite plate)
DESCRIPTION OF SYMBOLS 2 Substrate side electrode 3 Substrate 4 Counter electrode 5 Integrated circuit part 10 Vibration element 11 Vibration film part 12 Contact part 31 Holding part 100 Vibration element array

Claims (7)

A substrate-side electrode provided on one surface of an insulating substrate, and a counter plate having a counter electrode disposed opposite to the substrate-side electrode, to change a distance between the substrate-side electrode and the counter electrode due to deformation of the counter plate. In a vibration element that emits a signal based on
The counter element is made of a silicon single crystal, and has an integrated circuit portion that performs processing related to the signal.   The vibration element according to claim 1, wherein the integrated circuit portion is an impurity region and is electrically connected to the counter electrode. Protruding to the substrate, comprising a holding portion for holding the counter plate,
The vibration element according to claim 1, wherein the integrated circuit unit is provided at a position aligned with the holding unit.   The said opposing board is provided in the one surface of the said opposing board facing the said board | substrate, and the contact position with the said holding | maintenance part, It is any one of Claim 1 to 3 characterized by the above-mentioned. The vibration element described. A substrate-side electrode provided on one surface of an insulating substrate, and a counter plate having a counter electrode disposed opposite to the substrate-side electrode, to change a distance between the substrate-side electrode and the counter electrode due to deformation of the counter plate. In a method for manufacturing a vibration element that emits a signal based on:
A method of manufacturing a vibrating element, comprising: an integrated circuit part forming step of forming an integrated circuit part that performs processing related to the signal on a counter plate made of silicon single crystal.   The method for manufacturing a vibration element according to claim 5, wherein the integrated circuit portion is an impurity region and is electrically connected to the counter electrode.   The method for manufacturing a vibration element according to claim 5, wherein the counter electrode is formed together in the integrated circuit portion forming step.