JP5797393B2 - 発光素子パッケージ - Google Patents
発光素子パッケージ Download PDFInfo
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- JP5797393B2 JP5797393B2 JP2010256647A JP2010256647A JP5797393B2 JP 5797393 B2 JP5797393 B2 JP 5797393B2 JP 2010256647 A JP2010256647 A JP 2010256647A JP 2010256647 A JP2010256647 A JP 2010256647A JP 5797393 B2 JP5797393 B2 JP 5797393B2
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- 239000000463 material Substances 0.000 claims description 44
- 238000000465 moulding Methods 0.000 claims description 24
- 238000000926 separation method Methods 0.000 claims description 23
- 239000011347 resin Substances 0.000 claims description 17
- 229920005989 resin Polymers 0.000 claims description 17
- 239000004593 Epoxy Substances 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 229920000106 Liquid crystal polymer Polymers 0.000 claims description 4
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 claims description 4
- 239000004696 Poly ether ether ketone Substances 0.000 claims description 4
- 239000004734 Polyphenylene sulfide Substances 0.000 claims description 4
- 239000004954 Polyphthalamide Substances 0.000 claims description 4
- 229920002530 polyetherether ketone Polymers 0.000 claims description 4
- 229920000069 polyphenylene sulfide Polymers 0.000 claims description 4
- 229920006375 polyphtalamide Polymers 0.000 claims description 4
- 239000000758 substrate Substances 0.000 description 17
- 238000009826 distribution Methods 0.000 description 14
- 230000003287 optical effect Effects 0.000 description 13
- 238000003860 storage Methods 0.000 description 13
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 9
- 239000010410 layer Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000004417 polycarbonate Substances 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 239000011162 core material Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 2
- -1 polyethylene Polymers 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
- H10H20/856—Reflecting means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/8506—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
Landscapes
- Led Device Packages (AREA)
Description
実施形態のパッケージはトップビュー形態で図示及び説明したが、サイドビュー方式により具現して上記のような配光分布を改善することができる。また、ボードの上に複数の発光素子パッケージ100を配置する時、発光素子パッケージ100の間の間隔を狭めることができる。
ール1060から放出された光を面光源化し、あるいは拡散、集光などを遂行するようになる。
Claims (14)
- キャビティーを有し、透光性樹脂物質を含む胴体と、
前記キャビティーの内部から前記胴体の下面を経由して、前記胴体の側面より外側に延長される複数のリード電極と、
前記複数のリード電極の間を絶縁させる分離部と、
前記キャビティー内で前記複数のリード電極に電気的に連結された発光素子と、
前記発光素子の上にモールディング部材と、
透光性樹脂物質を含み、前記モールディング部材の上面、前記胴体の上面及び前記胴体の外側面に接触し、それらを取り囲むレンズ部と、を含み、
前記分離部は、前記胴体の物質と異なり、前記胴体より高い反射率を有する物質を含み、前記発光素子から水平方向に沿って離隔するように配置され、
前記レンズ部は、前記複数のリード電極のうち前記胴体の第1外側面に隣接する第1リード電極の一部の上面と接触する領域と、前記複数のリード電極のうち前記胴体の第2外側面に隣接する第2リード電極の一部の上面と接触する領域と、を有し、前記第1及び第2外側面は互いに反対側に位置することを特徴とする発光素子パッケージ。 - 前記分離部は、前記胴体の物質と異なる物質で形成されることを特徴とする請求項1に記載の発光素子パッケージ。
- 前記分離部は、前記複数のリード電極のうち、少なくとも1つの厚さ以上の厚さを有することを特徴とする請求項1又は2に記載の発光素子パッケージ。
- 前記胴体は、シリコン、エポキシ、及びガラス材料のうち、少なくとも1つを含むことを特徴とする請求項1から3のいずれか一項に記載の発光素子パッケージ。
- 前記胴体の少なくとも1側面は曲面形状を含むことを特徴とする請求項1から4のいずれか一項に記載の発光素子パッケージ。
- 前記胴体の外側に前記胴体の上面より更に突出され、前記レンズ部に接触された突出部を含むことを特徴とする請求項1から5のいずれか一項に記載の発光素子パッケージ。
- 前記分離部は、PPA(Polyphthal amide)、LCP(Liquid Crystal Polymer)、PPS(Poly Phenylene sulfide)、またはPEEK(Polyetheretherketone)のうち、少なくとも1つを含むことを特徴とする請求項1から6のいずれか一項に記載の発光素子パッケージ。
- 前記レンズ部は、中央に前記発光素子方向に窪んだ凹部を含むことを特徴とする請求項1から7のいずれか一項に記載の発光素子パッケージ。
- キャビティーを有し、透光性樹脂物質を含む上部胴体と、
前記キャビティーの内部から前記上部胴体の下面を経由して、前記上部胴体の側面より外側に延長される複数のリード電極と、
前記複数のリード電極の間に配置され、前記上部胴体の下部まで延びた不透光性の分離部と、
前記キャビティー内に配置された前記複数のリード電極のうち、少なくとも1つの上に配置された発光素子と、
前記キャビティー内に配置された前記発光素子を覆うモールディング部材と、
透光性樹脂物質を含み、前記モールディング部材の上面、前記上部胴体の上面及び前記上部胴体の外側面に接触し、それらを取り囲むレンズ部と、を含み、
前記分離部は、前記上部胴体の物質と異なり、前記上部胴体より高い反射率を有する物質を含み、前記発光素子から水平方向に沿って離隔するように配置され、
前記レンズ部は、前記複数のリード電極のうち前記上部胴体の第1外側面に隣接する第1リード電極の一部の上面と接触する領域と、前記複数のリード電極のうち前記上部胴体の第2外側面に隣接する第2リード電極の一部の上面と接触する領域と、を有し、前記第1及び第2外側面は互いに反対側に位置することを特徴とする発光素子パッケージ。 - 前記上部胴体は、シリコン、エポキシ、またはガラス材料を含むことを特徴とする請求項9に記載の発光素子パッケージ。
- 前記キャビティーの周りは前記キャビティーの底面に傾斜するように配置されたことを特徴とする請求項9または10に記載の発光素子パッケージ。
- 前記上部胴体の下に配置された下部胴体を含むことを特徴とする請求項9から11のいずれか一項に記載の発光素子パッケージ。
- 前記レンズ部は上面が同心円形状のパターンで形成された凸レンズ形状を含むことを特徴とする請求項9から12のいずれか一項に記載の発光素子パッケージ。
- 前記複数のリード電極は、前記上部胴体の幅に比べて80%以上の幅で形成されることを特徴とする請求項9から13のいずれか一項に記載の発光素子パッケージ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2009-0111034 | 2009-11-17 | ||
KR1020090111034A KR101064090B1 (ko) | 2009-11-17 | 2009-11-17 | 발광소자 패키지 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011109102A JP2011109102A (ja) | 2011-06-02 |
JP5797393B2 true JP5797393B2 (ja) | 2015-10-21 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010256647A Active JP5797393B2 (ja) | 2009-11-17 | 2010-11-17 | 発光素子パッケージ |
Country Status (5)
Country | Link |
---|---|
US (2) | US8530918B2 (ja) |
EP (1) | EP2323183B1 (ja) |
JP (1) | JP5797393B2 (ja) |
KR (1) | KR101064090B1 (ja) |
CN (1) | CN102097423B (ja) |
Families Citing this family (50)
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TWI517452B (zh) * | 2011-03-02 | 2016-01-11 | 建準電機工業股份有限公司 | 發光晶體之多晶封裝結構 |
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US8530918B2 (en) | 2013-09-10 |
CN102097423B (zh) | 2015-09-30 |
US20110114979A1 (en) | 2011-05-19 |
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