JP5782070B2 - 電気素子のパッケージ - Google Patents
電気素子のパッケージ Download PDFInfo
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- JP5782070B2 JP5782070B2 JP2013150152A JP2013150152A JP5782070B2 JP 5782070 B2 JP5782070 B2 JP 5782070B2 JP 2013150152 A JP2013150152 A JP 2013150152A JP 2013150152 A JP2013150152 A JP 2013150152A JP 5782070 B2 JP5782070 B2 JP 5782070B2
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- 239000000758 substrate Substances 0.000 claims description 58
- 239000012790 adhesive layer Substances 0.000 claims description 21
- 239000000919 ceramic Substances 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 9
- CNQCVBJFEGMYDW-UHFFFAOYSA-N lawrencium atom Chemical compound [Lr] CNQCVBJFEGMYDW-UHFFFAOYSA-N 0.000 description 44
- 239000002184 metal Substances 0.000 description 18
- 229910052751 metal Inorganic materials 0.000 description 18
- 230000003287 optical effect Effects 0.000 description 14
- 229910000679 solder Inorganic materials 0.000 description 9
- 229910000833 kovar Inorganic materials 0.000 description 8
- 239000011347 resin Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 230000020169 heat generation Effects 0.000 description 6
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- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002612 dispersion medium Substances 0.000 description 2
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- 150000002739 metals Chemical class 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
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- 230000007774 longterm Effects 0.000 description 1
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- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
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- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
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- 239000004094 surface-active agent Substances 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/38—Cooling arrangements using the Peltier effect
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0077—Other packages not provided for in groups B81B7/0035 - B81B7/0074
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0083—Temperature control
- B81B7/0087—On-device systems and sensors for controlling, regulating or monitoring
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- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
- H01L23/057—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
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- H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
- H01L2224/48229—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item the bond pad protruding from the surface of the item
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- H01L2224/732—Location after the connecting process
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- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
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- H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
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- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
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- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15312—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a pin array, e.g. PGA
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- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Semiconductor Lasers (AREA)
Description
はじめに、本発明の実施の形態1について図1を用いて説明する。図1は、本発明の実施の形態1における電気素子のパッケージの構成を示す断面図(a),(b)および平面図(c)である。図1の(a)は、図1の(c)におけるaa線の断面を示し、図1の(b)は、図1の(c)におけるbb線の断面を示している。
次に、本発明の実施の形態2について図3を用いて説明する。図3は、本発明の実施の形態2における電気素子のパッケージの構成を示す断面図である。
次に、本発明の実施の形態3について図4を用いて説明する。図4は、本発明の実施の形態3における電気素子のパッケージの構成を示す断面図(a),(b)および平面図(c)である。図4の(a)は、図4の(c)におけるaa線の断面を示し、図4の(b)は、図4の(c)におけるbb線の断面を示している。
Claims (4)
- 電気素子および前記電気素子を搭載する基板と、
前記電気素子を収容して前記電気素子の上部に空間を備えて気密封止された容器と、
前記基板に内蔵された温度調節手段と、
前記電気素子と前記容器の外部との電気的な接続を行う接続手段と
を備え、
前記電気素子は第1の接着層により前記基板に固定され、
前記基板は第2の接着層により前記容器に固定され、
前記第2の接着層の熱伝導率は、前記第1の接着層の熱伝導率よりも低くされ、
前記接続手段は、フレキシブルプリント配線から構成されて前記容器の前記基板が固定された面の上に接続されている
ことを特徴とする電気素子のパッケージ。 - 請求項1記載の電気素子のパッケージにおいて、
前記基板は、セラミックから構成され、前記温度調節手段は、抵抗発熱体から構成されていることを特徴とする電気素子のパッケージ。 - 請求項2記載の電気素子のパッケージにおいて、
前記抵抗発熱体は配線パターンにより構成され、
前記配線パターンは、隣り合う配線を互いに平行な状態とし、前記隣り合う配線の電流の方向が異なる状態で形成されている
ことを特徴とする電気素子のパッケージ。 - 請求項1記載の電気素子のパッケージにおいて、
前記基板および前記温度調節手段は一体とされてペルチェ素子から構成されていることを特徴とする電気素子のパッケージ。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013150152A JP5782070B2 (ja) | 2013-07-19 | 2013-07-19 | 電気素子のパッケージ |
PCT/JP2014/069202 WO2015008860A1 (ja) | 2013-07-19 | 2014-07-18 | 電気素子のパッケージ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013150152A JP5782070B2 (ja) | 2013-07-19 | 2013-07-19 | 電気素子のパッケージ |
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JP2015023154A JP2015023154A (ja) | 2015-02-02 |
JP5782070B2 true JP5782070B2 (ja) | 2015-09-24 |
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JP2013150152A Active JP5782070B2 (ja) | 2013-07-19 | 2013-07-19 | 電気素子のパッケージ |
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WO (1) | WO2015008860A1 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016051773A (ja) * | 2014-08-29 | 2016-04-11 | 日本電信電話株式会社 | 電気素子のパッケージ |
EP3059760A1 (de) * | 2015-02-18 | 2016-08-24 | Siemens Aktiengesellschaft | Elektronische Vorrichtung |
JP6713922B2 (ja) * | 2016-12-21 | 2020-06-24 | 日本特殊陶業株式会社 | 光学素子搭載用配線基板 |
FR3078694B1 (fr) * | 2018-03-07 | 2020-03-20 | Thales | Systeme electronique comprenant un microsysteme electromecanique et un boitier encapsulant ce microsysteme electromecanique |
JP7038645B2 (ja) | 2018-12-06 | 2022-03-18 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP7470517B2 (ja) * | 2020-02-05 | 2024-04-18 | 古河電気工業株式会社 | 光学装置 |
WO2023135929A1 (ja) * | 2022-01-11 | 2023-07-20 | ソニーセミコンダクタソリューションズ株式会社 | パッケージ |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51144182A (en) * | 1975-06-05 | 1976-12-10 | Mitsubishi Electric Corp | Indirectly heated semiconductor unit |
JPH04348280A (ja) * | 1991-05-24 | 1992-12-03 | Honda Motor Co Ltd | ヒータ内蔵ハイブリッドic |
JP2004296948A (ja) * | 2003-03-27 | 2004-10-21 | Kyocera Corp | 光半導体素子用サブキャリアおよび光半導体装置 |
JP3947500B2 (ja) * | 2003-07-07 | 2007-07-18 | 三井化学株式会社 | パッケージの製造方法及びパッケージ用金型 |
JP2008147452A (ja) * | 2006-12-11 | 2008-06-26 | Sharp Corp | 光通信デバイス |
JP2010538497A (ja) * | 2007-09-05 | 2010-12-09 | ラムバス・インコーポレーテッド | 不揮発性半導体メモリ・デバイスにおける欠陥を修復するための方法および装置 |
US7965094B2 (en) * | 2008-07-14 | 2011-06-21 | Honeywell International Inc. | Packaged die heater |
JP2010225919A (ja) * | 2009-03-24 | 2010-10-07 | Sony Corp | 半導体装置 |
JP2012028578A (ja) * | 2010-07-23 | 2012-02-09 | Algan Kk | 受光センサ及び液体試料分析装置 |
-
2013
- 2013-07-19 JP JP2013150152A patent/JP5782070B2/ja active Active
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2014
- 2014-07-18 WO PCT/JP2014/069202 patent/WO2015008860A1/ja active Application Filing
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