JP5776203B2 - Light emitting element - Google Patents
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- JP5776203B2 JP5776203B2 JP2011028096A JP2011028096A JP5776203B2 JP 5776203 B2 JP5776203 B2 JP 5776203B2 JP 2011028096 A JP2011028096 A JP 2011028096A JP 2011028096 A JP2011028096 A JP 2011028096A JP 5776203 B2 JP5776203 B2 JP 5776203B2
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- 239000004065 semiconductor Substances 0.000 claims description 120
- 238000000605 extraction Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 6
- 239000010410 layer Substances 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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Description
本発明は、第１半導体と、第２半導体と、第１半導体に接続された第１電極と、第２半導体に接続された第２電極と、を有する発光素子に関する。 The present invention relates to a light emitting device having a first semiconductor, a second semiconductor, a first electrode connected to the first semiconductor, and a second electrode connected to the second semiconductor.
従来、「台座電極」（本明細書の「接続部」に相当する。）と「台座電極」から延伸する「補助電極」（本明細書の「延伸部」に相当する。）とからなる電極を有する発光素子が提案されている（例えば特許文献１）。引用文献１には、「補助電極」を設けることにより均一な発光が得られる旨が記載されている。 Conventionally, an electrode composed of a “pedestal electrode” (corresponding to “connecting portion” in the present specification) and an “auxiliary electrode” (corresponding to “extending portion” in the present specification) extending from the “pedestal electrode”. There has been proposed a light-emitting element having the above (for example, Patent Document 1). Cited Document 1 describes that uniform light emission can be obtained by providing an “auxiliary electrode”.
しかしながら、従来の構造では「台座電極」の近傍が過度に発光してしまうため、均一な発光を得ることが難しいという問題があった。さらに、従来の構造では他方の「台座電極」を設けるために半導体の一部を除去してしまうため、発光領域が減少してしまうという問題もあった。 However, the conventional structure has a problem in that it is difficult to obtain uniform light emission because the vicinity of the “pedestal electrode” emits excessive light. Further, in the conventional structure, since the other “pedestal electrode” is provided, a part of the semiconductor is removed, so that there is a problem that the light emitting region is reduced.
本発明はかかる事情に鑑みてなされたものであり、発光ムラを軽減し発光出力を向上させることが可能な発光素子を提供することを課題とする。 This invention is made | formed in view of this situation, and makes it a subject to provide the light emitting element which can reduce light emission nonuniformity and can improve light emission output.
一実施形態に係る発光素子は、第１半導体と、第１半導体上に設けられた第２半導体と、第１半導体上に設けられた第１電極と、第２半導体上に設けられた第２電極と、を有し、第１電極及び第２電極が設けられた側で光取り出しが可能となっている。第２半導体は第１半導体が露出するように開口した開口部を有し、第１電極は外部と接続するための第１接続部と第１接続部から延伸する第１延伸部とを有し、第１接続部は第２半導体上に誘電体多層膜よりなる絶縁部を介して設けられ、第１延伸部は開口部から露出した第１半導体と接続されている。
A light emitting device according to an embodiment includes a first semiconductor, a second semiconductor provided on the first semiconductor, a first electrode provided on the first semiconductor, and a second semiconductor provided on the second semiconductor. And light extraction is possible on the side where the first electrode and the second electrode are provided. The second semiconductor has an opening that is open so that the first semiconductor is exposed, and the first electrode has a first connection part for connecting to the outside and a first extension part extending from the first connection part. The first connecting portion is provided on the second semiconductor via an insulating portion made of a dielectric multilayer film , and the first extending portion is connected to the first semiconductor exposed from the opening.
以下、本発明に係る発光素子を実施するための形態について
、図面を参照しながら説明する。ただし、以下に示す形態は、本発明の技術思想を具体化するための例示であって、特に記載しない限り本発明を以下に限定するものではない。さらに、同一の名称、符号については、原則として同一もしくは同質の部材を示しており、詳細説明は適宜省略する。
Hereinafter, embodiments for carrying out a light emitting device according to the present invention will be described with reference to the drawings. However, the form shown below is an illustration for embodying the technical idea of the present invention, and the present invention is not limited to the following unless otherwise specified. Further, in principle, the same names and symbols indicate the same or the same members, and detailed description thereof will be omitted as appropriate.
＜第１実施形態＞
図１は本実施形態に係る発光素子１００を光取り出し側からみた平面図であり、図２は図１におけるＸ−Ｘ部の断面図であり、図３は図１におけるＹ−Ｙ部の断面図である。図４は本実施形態に係る発光素子１００の発光状態を示す図である。なお、図１においては説明を簡便にするため、図２又は図３における第１透光部３０ｃ、絶縁部５１、第１反射部５２、第２反射部５３は図示していない。
<First Embodiment>
1 is a plan view of the light emitting device 100 according to the present embodiment as viewed from the light extraction side, FIG. 2 is a cross-sectional view taken along a line XX in FIG. 1, and FIG. 3 is a cross-sectional view taken along a line YY in FIG. FIG. FIG. 4 is a diagram illustrating a light emission state of the light emitting device 100 according to the present embodiment. In FIG. 1, the first light transmitting part 30c, the insulating part 51, the first reflecting part 52, and the second reflecting part 53 in FIG. 2 or FIG.
図１〜４に示すように、発光素子１００は、第１半導体１０と、第１半導体１０上に設けられた第２半導体２０と、第１半導体１０上に設けられた第１電極３０と、第２半導体２０上に設けられた第２電極４０と、を有し、第１電極３０及び第２電極４０が設けられた側で光取り出しが可能となっている（つまり、発光素子１００は所謂フェイスアップ実装用の発光素子に関するものである。）。第２半導体２０は、第１半導体１０が露出するように開口した開口部２１を有する。第１電極３０は、外部と接続するための第１接続部３０ａと、第１接続部３０ａから延伸する第１延伸部３０ｂと、を有する。そして、第１接続部３０ａは第２半導体２０上に絶縁部５１を介して設けられ、第１延伸部３０ｂは開口部２１から露出した第１半導体１０と接続されている。 As shown in FIGS. 1 to 4, the light emitting device 100 includes a first semiconductor 10, a second semiconductor 20 provided on the first semiconductor 10, a first electrode 30 provided on the first semiconductor 10, And the second electrode 40 provided on the second semiconductor 20, and light extraction is possible on the side where the first electrode 30 and the second electrode 40 are provided (that is, the light emitting element 100 is a so-called This relates to a light-emitting element for face-up mounting.) The second semiconductor 20 has an opening 21 that is open so that the first semiconductor 10 is exposed. The 1st electrode 30 has the 1st connection part 30a for connecting with the exterior, and the 1st extending | stretching part 30b extended | stretched from the 1st connection part 30a. The first connecting portion 30 a is provided on the second semiconductor 20 via the insulating portion 51, and the first extending portion 30 b is connected to the first semiconductor 10 exposed from the opening 21.
これにより、より均一な発光とすることができるとともに、より高い発光出力とすることができる。以下、そのメカニズムについて説明する。 Thereby, it is possible to obtain more uniform light emission and higher light emission output. Hereinafter, the mechanism will be described.
一般に、接続部には発光素子に電流を流すためにワイヤなどの導電性部材が直接接続される。その結果、接続部から近い領域では電流密度が高くなり、接続部から遠い領域では電流密度が低くなる。これを補うために、接続部から延伸する延伸部を設け、より広い領域に電流を拡散させる試みもされている。しかし、延伸部を設けたとしても接続部近傍における電流密度が圧倒的に高いので、接続部近傍のみが過度に発光してしまい、素子全体として均一な発光を得ることは困難であった。 In general, a conductive member such as a wire is directly connected to the connection portion in order to pass a current through the light emitting element. As a result, the current density is high in a region near the connection part, and the current density is low in a region far from the connection part. In order to make up for this, an extension part extending from the connection part is provided, and an attempt is made to diffuse the current over a wider area. However, even if the extending portion is provided, the current density in the vicinity of the connecting portion is overwhelmingly high, so that only the vicinity of the connecting portion emits excessive light, and it is difficult to obtain uniform light emission as the entire element.
そこで、本実施形態では、第1接続部３０ａを第２半導体２０上に絶縁部５１を介して設け、第１延伸部３０ｂを開口部２１から露出した第１半導体１０に接続する構成とした。つまり、第１接続部３０ａは第１半導体１０と電気的に直接接続されておらず、第１延伸部３０ｂが第１半導体１０と電気的に直接接続されている。これより、第1接続部３０ａから第１半導体１０に直接電流が流れることを防止しつつ第1接続部３０ａから離れた領域において第１電極３０と第１半導体１０を電気的に接続することが可能となるので、第1接続部３０ａ近傍における過度な発光を抑制しより均一な発光とすることができる。図４から、第１接続部３０ａ近傍で過度に発光することなく、開口部２１における第１半導体１０と第１延伸部３０ｂとの接触領域を中心として全体としてより均一に発光していることがわかる。 Therefore, in the present embodiment, the first connecting portion 30a is provided on the second semiconductor 20 via the insulating portion 51, and the first extending portion 30b is connected to the first semiconductor 10 exposed from the opening portion 21. In other words, the first connection part 30 a is not directly electrically connected to the first semiconductor 10, and the first extending part 30 b is electrically connected directly to the first semiconductor 10. Thus, the first electrode 30 and the first semiconductor 10 can be electrically connected in a region away from the first connection part 30a while preventing a current from flowing directly from the first connection part 30a to the first semiconductor 10. Therefore, excessive light emission in the vicinity of the first connection portion 30a can be suppressed and more uniform light emission can be achieved. From FIG. 4, it is shown that light is emitted more uniformly as a whole around the contact region between the first semiconductor 10 and the first extending portion 30b in the opening 21 without excessive light emission in the vicinity of the first connection portion 30a. Recognize.
さらに、従来のフェイスアップ実装用の発光素子は、光取り出し側から半導体（本明細書の「第２半導体」に相当する。）の一部を除去し、除去した領域（本明細書の「第１半導体」に相当する。）に接続部（本明細書の「第１接続部」に相当する。）を直接設けていた（例えば特許文献１の図１等参照。）。ここで、半導体を除去する際には、除去した半導体と極性の異なる接続部とを絶縁すること等を理由として、接続部よりも一回り大きい半導体領域を除去する必要がある。つまり、接続部よりも一回り大きい領域は本来であれば直接発光可能な領域であるが、従来の発光素子では接続部を形成するために、当該領域が除去されており、結果として発光領域が減少していた。当該領域の面積は素子全体の面積に比較すれば小さいものであるが、さらなる発光出力の向上が望まれている昨今においては決して無視できない問題である。 Further, a conventional light-emitting element for face-up mounting removes a part of a semiconductor (corresponding to “second semiconductor” in the present specification) from the light extraction side, and removes a region (“first” in the specification). 1 (corresponding to “semiconductor”) is directly provided with a connecting portion (corresponding to “first connecting portion” in the present specification) (see, for example, FIG. 1 of Patent Document 1). Here, when the semiconductor is removed, it is necessary to remove a semiconductor region that is slightly larger than the connection portion, for example, because the removed semiconductor and the connection portion having different polarities are insulated. That is, a region that is slightly larger than the connection portion is originally a region that can emit light directly, but in the conventional light emitting element, the region is removed in order to form the connection portion. It was decreasing. The area of the region is small compared to the area of the entire device, but it is a problem that cannot be ignored in recent years when further improvement in light emission output is desired.
そこで、本実施形態では、第１接続部３０ａを第１半導体１０上に直接形成せずに、第１半導体１０側から順に第２半導体２０及び絶縁部５１を介して形成している。これにより、第1接続部３０ａの下部及びその近傍に第１半導体１０だけでなく第２半導体２０を残した構成とすることができるので、第1接続部３０ａの下部及びその近傍も発光領域とすることができる（図４参照）。つまり、従来の発光素子と比較して発光領域を大きく取ることができるので、素子全体としての発光出力をより向上させることができる。以下、発光素子１００を構成する主な構成要素について説明する。 Therefore, in the present embodiment, the first connection portion 30a is not formed directly on the first semiconductor 10, but is formed via the second semiconductor 20 and the insulating portion 51 in order from the first semiconductor 10 side. Accordingly, since the second semiconductor 20 as well as the first semiconductor 10 can be left in the lower portion of the first connection portion 30a and in the vicinity thereof, the lower portion of the first connection portion 30a and the vicinity thereof can be separated from the light emitting region. (See FIG. 4). That is, since the light emitting region can be made larger than that of the conventional light emitting element, the light emission output of the entire element can be further improved. Hereinafter, main components constituting the light emitting element 100 will be described.
（第１半導体１０及び第２半導体２０）
第１半導体１０は、第１電極３０ａを接続させるための部材であり、第２半導体２０と異なる極性を有する。同様に、第２半導体２０は、第２電極４０を接続させるための部材であり、第１半導体１０と異なる極性を有する。本実施形態では、第１半導体１０をｎ型、第２半導体２０をｐ型としている。
(First semiconductor 10 and second semiconductor 20)
The first semiconductor 10 is a member for connecting the first electrode 30 a and has a polarity different from that of the second semiconductor 20. Similarly, the second semiconductor 20 is a member for connecting the second electrode 40 and has a polarity different from that of the first semiconductor 10. In the present embodiment, the first semiconductor 10 is n-type and the second semiconductor 20 is p-type.
第２半導体２０には、第１半導体１０が露出するように開口した開口部２１が設けられている。ここでは図１に示すように、開口部２１は、第１延伸部３０ｂの延伸方向に長い形状をしており、第１延伸部３０ｂと第２半導体２０が被らないように（つまり、開口部２１の内側に第１延伸部３０ｂが配置されるように）、第１延伸部３０ｂよりも一回り大きい幅を有する。 The second semiconductor 20 is provided with an opening 21 that is open so that the first semiconductor 10 is exposed. Here, as shown in FIG. 1, the opening 21 has a shape that is long in the extending direction of the first extending portion 30 b, so that the first extending portion 30 b and the second semiconductor 20 are not covered (that is, the opening So that the first extending portion 30b is disposed inside the portion 21), and has a width that is slightly larger than the first extending portion 30b.
ここでは、説明の便宜上、第１半導体１０及び第２半導体２０を含む半導体から構成される部位を半導体部とする。半導体部は、少なくとも第１半導体１０及び第２半導体２０を含む層から構成されるが、各層を構成する材料については限定されず、種々のものを採用することができる。本実施形態では、各層の材料として窒化物半導体（ＩｎＸＡｌＹＧａ１−Ｘ−ＹＮ（０≦Ｘ＜１、０≦Ｙ＜１、０≦Ｘ＋Ｙ＜１））を用いた。窒化物半導体はＧａＡｓ等の他の材料と比較して半導体内部の抵抗が大きいため電流を均一に流すことが難しい。したがって、本実施形態の構成は、半導体部を窒化物半導体で構成した場合に特に効果的である。 Here, for convenience of explanation, a portion composed of a semiconductor including the first semiconductor 10 and the second semiconductor 20 is defined as a semiconductor portion. The semiconductor part is composed of a layer including at least the first semiconductor 10 and the second semiconductor 20, but the material constituting each layer is not limited, and various materials can be adopted. In the present embodiment, a nitride semiconductor (In X Al Y Ga 1- XYN (0 ≦ X <1, 0 ≦ Y <1, 0 ≦ X + Y <1)) is used as the material of each layer. Nitride semiconductors have a higher resistance inside the semiconductor than other materials such as GaAs, so it is difficult to flow current uniformly. Therefore, the configuration of the present embodiment is particularly effective when the semiconductor portion is made of a nitride semiconductor.
半導体部の構造については限定されず、種々のものを採用することができる。本実施形態では、第１半導体１０と第２半導体２０の間に多重量子構造の活性層等（図示せず）を介在させた構成とした。 The structure of the semiconductor portion is not limited, and various types can be adopted. In the present embodiment, an active layer or the like (not shown) having a multiple quantum structure is interposed between the first semiconductor 10 and the second semiconductor 20.
本実施形態では、基板６０上に第１半導体１０及び第２半導体２０を順に形成している。半導体部が窒化物半導体からなる場合、基板５０としてはサファイア等を用いることができる。ただし、基板５０は必須ではなく、例えば、第１半導体１０及び第２半導体２０を成長した後に除去することもできるし、基板５０を用いずに第１半導体１０を成長基板として第２半導体２０を成長させることもできる。 In the present embodiment, the first semiconductor 10 and the second semiconductor 20 are sequentially formed on the substrate 60. When the semiconductor portion is made of a nitride semiconductor, sapphire or the like can be used as the substrate 50. However, the substrate 50 is not essential. For example, the first semiconductor 10 and the second semiconductor 20 can be removed after the growth, or the second semiconductor 20 can be formed using the first semiconductor 10 as a growth substrate without using the substrate 50. It can also be grown.
（第１電極３０）
第１電極３０は、光取り出し側において第１半導体１０と電気的に接続される電極であり、第1接続部３０ａと第１延伸部３０ｂを備える。第1接続部３０ａはワイヤ等の導電部材を介して外部から電流が供給される部位であり、第１延伸部３０ｂは、第１接続部３０ａから部分的に延伸しており、第１接続部３２に注入された電流を延伸方向に広げるための部位である。
(First electrode 30)
The first electrode 30 is an electrode that is electrically connected to the first semiconductor 10 on the light extraction side, and includes a first connection portion 30a and a first extending portion 30b. The first connection part 30a is a part to which an electric current is supplied from the outside via a conductive member such as a wire, and the first extension part 30b extends partly from the first connection part 30a, and the first connection part This is a part for spreading the current injected into 32 in the stretching direction.
図１では、第１延伸部３０ｂは、第１接続部３０ａ側から順に、第２半導体２０上に絶縁部５１を介して設けられた非導通領域（第１接続部３０ａと同様である）と、開口部２１内において第１半導体１０上に直接形成された導通領域と、を有する。第１接続部３０ａに近く発光が過度に強くなり易い領域を非導通領域とし、第１接続部３０ａから遠く発光が過度に強くなり難い領域を導通領域とすることで、より均一な発光が可能となる。 In FIG. 1, the first extending portion 30 b is a non-conducting region (similar to the first connecting portion 30 a) provided on the second semiconductor 20 via the insulating portion 51 in order from the first connecting portion 30 a side. And a conduction region formed directly on the first semiconductor 10 in the opening 21. A region close to the first connection portion 30a where light emission tends to be excessively strong is set as a non-conductive region, and a region far from the first connection portion 30a where light emission is hardly excessively strong is set as a conductive region, thereby enabling more uniform light emission. It becomes.
本実施形態のように、第１電極３０は、第１透光部３０ｃをさらに備えることが好ましい。つまり、本実施形態の第１電極３０は、第１接続部３０ａ、第１延伸部３０ｂ及び第１透光部３０ｃから構成されている。第１透光部３０ｃは、開口部２１内において第１半導体１０と第１延伸部３０ｂとの間に設けられる部材であり、第１延伸部３０ｂから供給された電流を第１半導体３０にさらに拡散させるためのものである。第１透光部３０ｃは透光性を有するので第１透光部を介して半導体部からの光を取り出すことができる。 As in the present embodiment, it is preferable that the first electrode 30 further includes a first light transmitting portion 30c. That is, the 1st electrode 30 of this embodiment is comprised from the 1st connection part 30a, the 1st extending | stretching part 30b, and the 1st translucent part 30c. The first light transmitting part 30 c is a member provided between the first semiconductor 10 and the first extending part 30 b in the opening 21, and further supplies the current supplied from the first extending part 30 b to the first semiconductor 30. It is for spreading. Since the first light transmitting portion 30c has a light transmitting property, light from the semiconductor portion can be extracted through the first light transmitting portion.
第１電極３０の構造や材料については限定されず種々のものを用いることができる。本実施形態では、第1接続部３０ａ及び第１延伸部３０ｂとして、Ｔｉ／Ｒｈ／Ｗ／Ａｕ（半導体部側からＴｉ、Ｒｈ、Ｗ及びＡｕが順に積層されていることを意味する。）を用い、第１透光部３０ｃとしてＩＴＯを用いた。ここでは、第1接続部３０ａ及び第１延伸部３０ｂを一体に形成した。 The structure and material of the first electrode 30 are not limited, and various types can be used. In the present embodiment, Ti / Rh / W / Au (which means that Ti, Rh, W, and Au are sequentially stacked from the semiconductor portion side) is used as the first connecting portion 30a and the first extending portion 30b. In addition, ITO was used as the first light transmitting portion 30c. Here, the 1st connection part 30a and the 1st extending | stretching part 30b were formed integrally.
（第２電極４０）
第２電極４０は、光取り出し側において第２半導体２０と電気的に接続される電極である。図１に示すように、第２電極４０は、外部と接続するための第２接続部４０ａと、第２接続部４０ａから延伸する第２延伸部４０ｂと、を備えることが好ましい。これにより、ワイヤ等の導電部材が直接接続される第２接続部４０ａだけでなく第２延伸部４０ｂを介して電流を流すことができるので、より均一に発光させることができる。
(Second electrode 40)
The second electrode 40 is an electrode that is electrically connected to the second semiconductor 20 on the light extraction side. As shown in FIG. 1, it is preferable that the 2nd electrode 40 is provided with the 2nd connection part 40a for connecting with the exterior, and the 2nd extending | stretching part 40b extended | stretched from the 2nd connection part 40a. Thereby, since an electric current can be sent through not only the 2nd connection part 40a to which conductive members, such as a wire, are connected directly but also the 2nd extending | stretching part 40b, it can be made to light-emit more uniformly.
第１延伸部３０ｂは第２接続部４０ａに向かって延伸し、第２延伸部４０ｂは第１延伸部３０ｂの両側に配置されていることが好ましい（図１参照）。第１延伸部３０ｂが第２接続部４０ａに向かって延伸するように構成することで、第１延伸部３０ｂの延伸方向において電流を流れやすくすることができる。さらに、第２延伸部４０ｂを第１延伸部３０ｂの両側に配置することで（つまり、２つの第２延伸部４０ｂのそれぞれを第１延伸部３０ｂと対向するように配置することで）、第１延伸部３０ｂの延伸方向に垂直をなす両方向においても電流を流れやすくすることができる。これにより、第１延伸部３０ｂからあらゆる方向に電流が拡散しやすく、結果としてより均一に発光させることができる。 It is preferable that the 1st extending | stretching part 30b is extended toward the 2nd connection part 40a, and the 2nd extending | stretching part 40b is arrange | positioned at the both sides of the 1st extending | stretching part 30b (refer FIG. 1). By configuring the first extending portion 30b to extend toward the second connecting portion 40a, it is possible to easily flow current in the extending direction of the first extending portion 30b. Further, by arranging the second extending portion 40b on both sides of the first extending portion 30b (that is, by disposing each of the two second extending portions 40b so as to face the first extending portion 30b), It is possible to facilitate the current flow in both directions perpendicular to the extending direction of the one extending portion 30b. Thereby, current easily diffuses in all directions from the first extending portion 30b, and as a result, light can be emitted more uniformly.
図１に示すように、第２延伸部４０ｂは開口部２１を超えて延伸していることが好ましい。つまり、第１延伸部３０ｂの延伸方向に長い開口部２１の第１接続部３０ａ側の端部を通り第１延伸部３０ｂの延伸方向と垂直をなす直線よりも、第２延伸部４０ｂの端部が第１接続部３０ａ側に配置されるように構成されている。これにより、第２延伸部４０ｂを第1接続部３０ａの近くまで延伸させることができるので、第1接続部３０ａの下部及び近傍における発光を向上させることができる。 As shown in FIG. 1, it is preferable that the second extending portion 40 b extends beyond the opening 21. That is, the end of the second extending portion 40b is more than the straight line that passes through the end of the first connecting portion 30a side of the opening 21 that is long in the extending direction of the first extending portion 30b and is perpendicular to the extending direction of the first extending portion 30b. The part is configured to be arranged on the first connection part 30a side. Thereby, since the 2nd extending | stretching part 40b can be extended | stretched to the vicinity of the 1st connection part 30a, the light emission in the lower part and the vicinity of the 1st connection part 30a can be improved.
本実施形態のように、第２電極４０は、第２透光部４０ｃをさらに備えることが好ましい。つまり、本実施形態の第２電極４０は、第２接続部４０ａ、第２延伸部４０ｂ及び第２透光部４０ｃから構成される。第２透光部４０ｃは第２半導体２０と第２接続部４０ａ及び第２延伸部４０ｂとの間に設けられる部材であり、第２接続部４０ａ及び第２延伸部４０ｂは第２透光部４０ｃ上に部分的に形成されている。これにより、第２接続部４０ａ及び第２延伸部４０ｂから供給された電流を第２半導体２０の面内方向にさらに拡散させることができる。さらに、第２透光部４０ｃは透光性を有するので第２透光部を介して半導体部からの光を取り出すことができる。第２電極４０が、第２透光部４０ｃを備える場合、第２延伸部４０ｂは、第２透光部４０ｃにおける第１延伸部３０ｂから遠い側の縁部近傍に設けることができる。これにより、より広い領域に電流を供給することができる。 As in the present embodiment, it is preferable that the second electrode 40 further includes a second light transmitting portion 40c. That is, the second electrode 40 of the present embodiment includes the second connection part 40a, the second extension part 40b, and the second light transmission part 40c. The second light transmitting part 40c is a member provided between the second semiconductor 20 and the second connecting part 40a and the second extending part 40b. The second connecting part 40a and the second extending part 40b are the second light transmitting part. It is partially formed on 40c. Thereby, the current supplied from the second connection part 40 a and the second extension part 40 b can be further diffused in the in-plane direction of the second semiconductor 20. Further, since the second light transmitting part 40c has a light transmitting property, light from the semiconductor part can be extracted through the second light transmitting part. When the 2nd electrode 40 is provided with the 2nd translucent part 40c, the 2nd extending | stretching part 40b can be provided in the edge part vicinity in the side far from the 1st extending | stretching part 30b in the 2nd translucent part 40c. Thereby, a current can be supplied to a wider area.
第２透光部４０ｃは、第２半導体２０上の略全面に設けられている（説明を簡便にするため、図１では第２透光部４０ｃの外縁を第２半導体２０の外縁に一致させているが、実際は図２及び図３に示すように第２半導体２０の外縁の若干内側に形成されている。）。図２に示すように、第２透光部４０ｃは、絶縁部５１を介して第１接続部３０ａの下部及び近傍にも形成されている。これにより、従来であれば、第１接続部を第１半導体に直接設けるために除去していた部分を直接発光に寄与する部分として残すことができるので、発光出力をより向上させることができる。 The second light transmitting portion 40c is provided on substantially the entire surface of the second semiconductor 20 (for the sake of simplicity, the outer edge of the second light transmitting portion 40c is aligned with the outer edge of the second semiconductor 20 in FIG. However, it is actually formed slightly inside the outer edge of the second semiconductor 20 as shown in FIGS. As shown in FIG. 2, the second light transmission part 40 c is also formed in the lower part and the vicinity of the first connection part 30 a via the insulating part 51. As a result, the portion that has been removed for providing the first connection portion directly to the first semiconductor can be left as a portion that directly contributes to light emission, so that the light emission output can be further improved.
第２電極４０の構造や材料については限定されず種々のものを用いることができる。本実施形態では、第２接続部４０ａ及び第２延伸部４０ｂとして、Ｔｉ／Ｒｈ／Ｗ／Ａｕ（半導体部側からＴｉ、Ｒｈ、Ｗ及びＡｕが順に積層されていることを意味する。）を用い、第２透光部４０ｃとしてＩＴＯを用いた。ここでは、第２接続部４０ａ及び第２延伸部４０ｂを一体に形成した。 The structure and material of the second electrode 40 are not limited, and various types can be used. In the present embodiment, Ti / Rh / W / Au (which means that Ti, Rh, W, and Au are sequentially stacked from the semiconductor portion side) as the second connection portion 40a and the second extension portion 40b. In addition, ITO was used as the second light transmitting portion 40c. Here, the 2nd connection part 40a and the 2nd extending | stretching part 40b were formed integrally.
（第１反射部５２）
図３に示すように、第１延伸部３０ｂが延伸する方向に垂直をなす方向における断面視において、第１延伸部３０ｂは、第１半導体１０側から順に第１幅狭領域と第１幅広領域とを有することができる。そして、第１電極３０は、第１半導体１０と第１延伸部３０ｂとの間に、第１幅狭領域より幅が広い第１透光部３０ｃを有し、第１幅狭領域には、第１反射部５２が埋設されていることが好ましい。これにより、Ｖｆの低減、発光出力の向上及び発光の均一化が可能なバランスに優れた発光素子とすることができる。
(First reflection portion 52)
As shown in FIG. 3, in a cross-sectional view in a direction perpendicular to the direction in which the first extending portion 30 b extends, the first extending portion 30 b includes a first narrow region and a first wide region in order from the first semiconductor 10 side. Can have. And the 1st electrode 30 has the 1st translucent part 30c wider than a 1st narrow area | region between the 1st semiconductor 10 and the 1st extending | stretching part 30b, and in a 1st narrow area | region, It is preferable that the 1st reflection part 52 is embed | buried. Thereby, it is possible to obtain a light-emitting element with an excellent balance in which Vf can be reduced, light emission output can be improved, and light emission can be made uniform.
Ｖｆを下げるためには第１延伸部３０ｂの断面積を増やせばよい。第１延伸部３０ｂの断面積を増やすことで、その内部抵抗が低下し、結果として素子全体としてのＶｆを低下させることができるからである。しかし、第１延伸部３０ｂの断面積を単純に増やすと発光出力の低下を伴ってしまう。第１延伸部３０ｂは構成材料やその膜厚に起因して透光性に乏しい（例えば非透光性）ので、半導体部からの光は第１延伸部３０ｂにより遮られてしまい光の取り出し効率が低下してしまうからである。一方、第１延伸部３０ｂによる光の吸収を抑制するために第１延伸部３０ｂの断面積を小さくしてしまうと、Ｖｆが上昇するだけでなく、第１延伸部３０ｂと第１半導体１０との接触面積が小さくなるので電流を効果的に広げることが困難となる。 In order to lower Vf, the cross-sectional area of the first extending portion 30b may be increased. This is because by increasing the cross-sectional area of the first extending portion 30b, the internal resistance decreases, and as a result, the Vf of the entire device can be decreased. However, simply increasing the cross-sectional area of the first extending portion 30b is accompanied by a decrease in light emission output. Since the first extending portion 30b is poor in translucency (for example, non-translucent) due to the constituent material and its film thickness, the light from the semiconductor portion is blocked by the first extending portion 30b and the light extraction efficiency It is because it will fall. On the other hand, if the cross-sectional area of the first extending portion 30b is reduced in order to suppress the light absorption by the first extending portion 30b, not only the Vf increases, but also the first extending portion 30b and the first semiconductor 10 It is difficult to effectively spread the current because the contact area becomes small.
そこで本実施の形態では、第一に、第１延伸部３０ｂに第１幅広領域を設けている。これにより、第１延伸部３０ｂが第１幅狭領域だけである場合に比較して、全体としての断面積を大きくすることができるので、発光素子１００のＶｆを低下させることができる。第二に、第１延伸部３０ｂにおいて第１半導体１０に近い側を第１幅狭領域とし、第１幅広領域と第１透光部３０ｃの間において、第１幅狭領域に隣接させるように第１反射部５２を設けている。これにより、第１幅広領域における光の吸収を抑制することができるので、Ｖｆを低下させつつ光の取り出し効率を向上させることができる。第三に、第１幅狭領域よりも幅の広い第１透光部３０ｃを設けている。これにより、第１延伸部３０ｂが第１幅狭領域で第１半導体１０と直接接合される場合に比較して、第１電極３０と第１半導体１０との接触面積をより大きくすることができるので、Ｖｆを低下させ光取り出し効率を向上させつつ、電流をより拡散させることができる。ここでは、第１透光部３０ｃの幅を第１幅広領域よりも広くし、電流拡散の効果がより顕著に得られるようにしている。 Therefore, in the present embodiment, first, the first wide region is provided in the first extending portion 30b. Thereby, compared with the case where the 1st extending | stretching part 30b is only a 1st narrow area | region, since the cross-sectional area as a whole can be enlarged, Vf of the light emitting element 100 can be reduced. Secondly, a side closer to the first semiconductor 10 in the first extending portion 30b is defined as a first narrow region, and is adjacent to the first narrow region between the first wide region and the first light transmitting portion 30c. A first reflecting portion 52 is provided. Thereby, since light absorption in the first wide region can be suppressed, the light extraction efficiency can be improved while lowering Vf. Thirdly, the first light transmitting portion 30c having a width wider than that of the first narrow region is provided. Thereby, compared with the case where the 1st extending | stretching part 30b is directly joined with the 1st semiconductor 10 in a 1st narrow area | region, the contact area of the 1st electrode 30 and the 1st semiconductor 10 can be enlarged more. Therefore, the current can be further diffused while reducing Vf and improving the light extraction efficiency. Here, the width of the first light transmitting portion 30c is made wider than that of the first wide region so that the current diffusion effect can be obtained more remarkably.
第１反射部５２の構造や材料については限定されず、種々のものを用いることができる。本実施形態では、Ｎｂ２Ｏ５及びＳｉＯ２を１ペアとしてこれを順に３回繰り返した誘電体多層膜を第１反射部５２として用いた。本実施形態では、絶縁部５１と第１反射部５２とを一体に形成した。絶縁部５１や第１反射部５２として、ＳｉＯ２の単層を用いてもよい。 The structure and material of the first reflection unit 52 are not limited, and various types can be used. In this embodiment, a dielectric multilayer film in which Nb 2 O 5 and SiO 2 are paired and this is sequentially repeated three times is used as the first reflecting portion 52. In the present embodiment, the insulating part 51 and the first reflecting part 52 are integrally formed. A single layer of SiO 2 may be used as the insulating part 51 and the first reflecting part 52.
（第２反射部５３）
図３に示すように、第２延伸部４０ｂが延伸する方向に垂直をなす方向における断面視において、第２延伸部４０ｂは、第２半導体２０側から順に第２幅狭領域と第２幅広領域とを有することができる。そして、第２電極４０は、第２半導体２０と第２延伸部４０ｂとの間に、第２幅狭領域より幅が広い第１透光部３０ｃを有し、第２幅狭領域には、第２反射部５３が埋設されていることが好ましい。本実施の形態では、第２反射部５３は第１反射部５２と同じ構成とした。その効果については第１反射部５２と同様なのでここでは繰り返さない。
(Second reflection portion 53)
As shown in FIG. 3, in a cross-sectional view in a direction perpendicular to the direction in which the second extending portion 40 b extends, the second extending portion 40 b includes a second narrow region and a second wide region in order from the second semiconductor 20 side. Can have. The second electrode 40 includes a first light-transmitting portion 30c that is wider than the second narrow region between the second semiconductor 20 and the second extending portion 40b. In the second narrow region, It is preferable that the 2nd reflection part 53 is embed | buried. In the present embodiment, the second reflecting portion 53 has the same configuration as the first reflecting portion 52. Since the effect is the same as that of the first reflecting portion 52, it will not be repeated here.
（その他）
図１に示すように、発光素子１００を光取り出し側から見た平面視において、発光素子の形状は、第1接続部３０ａと第２接続部４０ａとを結ぶ方向を長手方向とする長方形であり、第1接続部３０ａが長手方向の一方の端部近傍に設けられ、第２接続部４２が前記長手方向の他方の端部近傍に設けられていることが好ましい。長方形の発光素子において、第1接続部３０ａが長手方向における一方の端部近傍にあると、短手方向における第1接続部３０ａから発光素子の縁部までの距離が、長手方向における第1接続部３０ａから発光素子の縁部までの距離よりも短くなる。その結果、第1接続部３０ａからみて短手方向の発光が強くなってしまい、長手方向の発光が弱くなってしまうので、発光ムラが生じやすい傾向がある（第２接続部４０ａについても同様である。）。しかし、本実施形態に係る発光素子であれば、第１延伸部３０ｂにより長手方向においても効果的に電流を流すことができるので、より均一な発光が可能となる（第２延伸部４０ｂについても同様である。）。
(Other)
As shown in FIG. 1, in a plan view of the light emitting element 100 as viewed from the light extraction side, the shape of the light emitting element is a rectangle whose longitudinal direction is a direction connecting the first connection portion 30a and the second connection portion 40a. The first connection portion 30a is preferably provided in the vicinity of one end portion in the longitudinal direction, and the second connection portion 42 is provided in the vicinity of the other end portion in the longitudinal direction. In the rectangular light emitting device, when the first connecting portion 30a is in the vicinity of one end in the longitudinal direction, the distance from the first connecting portion 30a in the short direction to the edge of the light emitting device is the first connection in the longitudinal direction. It becomes shorter than the distance from the part 30a to the edge part of a light emitting element. As a result, the light emission in the short direction becomes stronger and the light emission in the longitudinal direction becomes weaker as viewed from the first connection portion 30a, and thus light emission unevenness tends to occur (the same applies to the second connection portion 40a). is there.). However, in the light emitting element according to the present embodiment, the first extending portion 30b can effectively pass a current in the longitudinal direction, so that more uniform light emission is possible (also for the second extending portion 40b). The same).
発光素子の形状が長方形である場合、（長辺の長さ）／（短辺の長さ）の値は、好ましくは５／３以上、より好ましくは５／２以上とすることができる。値が大きくなるほど長手方向に長くなるので、上記効果をより顕著に得ることができる。発光素子１００では、（長辺の長さ）を約７００μｍとし、（短辺の長さ）を約２４０μｍとした。 When the shape of the light emitting element is a rectangle, the value of (long side length) / (short side length) is preferably 5/3 or more, more preferably 5/2 or more. The larger the value, the longer in the longitudinal direction, so that the above effect can be obtained more remarkably. In the light emitting element 100, (long side length) was set to about 700 μm, and (short side length) was set to about 240 μm.
図１に示すように、平面視において、発光素子１００は第1接続部３０ａと第２接続部４０ａとを結ぶ直線を基準として線対称となるように構成されていることが好ましい。半導体部、第１電極３０及び第２電極４０を含む発光素子そのものを線対称となるように構成することにより、平面視における発光ムラをより低減させることができる。なお、本明細書において「線対称」とは、線で分けられた両者が完全に線対称である場合だけでなく、両者に多少のずれがある場合であっても実質的に線対称であるとして、「線対称」の範囲内とする。 As shown in FIG. 1, the light emitting element 100 is preferably configured to be line symmetric with respect to a straight line connecting the first connection portion 30a and the second connection portion 40a in plan view. By configuring the light emitting element itself including the semiconductor portion, the first electrode 30 and the second electrode 40 to be line symmetric, light emission unevenness in a plan view can be further reduced. In the present specification, “line symmetry” means not only a case where both divided by a line are completely line symmetrical but also a case where both are slightly line symmetrical. In the range of “line symmetry”.
本実施形態では、第１延伸部３０ｂと第１透光部３０ｃとを直線状に連続で接触するように構成したが、例えばドット状に不連続で接触させることもできる（第２延伸部４０ｂと第２透光部４０ｃとの関係についても同様である。）。同様に、本実施形態では、第１半導体１０と第１電極３０とを直線状に連続で接触するように構成したが、例えばドット状に不連続で接触させることもできる。 In the present embodiment, the first extending portion 30b and the first light transmitting portion 30c are configured to continuously contact with each other in a straight line. However, for example, the first extending portion 30b and the first light transmitting portion 30c may be discontinuously contacted with each other (second extending portion 40b). The same applies to the relationship between the second light transmitting portion 40c and the second light transmitting portion 40c.) Similarly, in the present embodiment, the first semiconductor 10 and the first electrode 30 are configured to continuously come into contact with each other in a straight line.
１００…発光素子
１０…第１半導体
２０…第２半導体
３０…第１電極
３０ａ…第１接続部
３０ｂ…第１延伸部
３０ｃ…第１透光部
４０…第２電極
４０ａ…第２接続部
４０ｂ…第２延伸部
４０ｃ…第２透光部
５１…絶縁部
５２…第１反射部
５３…第２反射部
６０…基板
DESCRIPTION OF SYMBOLS 100 ... Light emitting element 10 ... 1st semiconductor 20 ... 2nd semiconductor 30 ... 1st electrode 30a ... 1st connection part 30b ... 1st extending | stretching part 30c ... 1st light transmission part 40 ... 2nd electrode 40a ... 2nd connection part 40b ... 2nd extending | stretching part 40c ... 2nd translucent part 51 ... Insulating part 52 ... 1st reflection part 53 ... 2nd reflection part 60 ... Board | substrate
Claims (7)
前記第２半導体は、前記第１半導体が露出するように開口した開口部を有し、
前記第１電極は、外部と接続するための第１接続部と、前記第１接続部から延伸する第１延伸部と、を有し、
前記第１接続部は、前記第１半導体と電気的に直接接続されないように前記第２半導体上に誘電体多層膜よりなる絶縁部を介して設けられ、
前記第１延伸部は、前記第１接続部側から順に、前記第２半導体上に前記絶縁部を介して設けられた非導通領域と、前記開口部内において前記第１半導体上に直接接続された導通領域と、を有し、
前記第１延伸部が延伸する方向に垂直をなす方向における断面視において、
前記第１延伸部は、前記第１半導体側から順に第１幅狭領域と第１幅広領域とを有し、
前記第１電極は、前記第１半導体と前記第１延伸部との間に、前記第１幅狭領域より幅が広い第１透光部を有し、
前記第１幅狭領域には、第１反射部が埋設されていることを特徴とする発光素子。 A first semiconductor; a second semiconductor provided on the first semiconductor; a first electrode provided on the first semiconductor; and a second electrode provided on the second semiconductor. In the light emitting device capable of extracting light on the side where the first electrode and the second electrode are provided,
The second semiconductor has an opening that is open to expose the first semiconductor;
The first electrode has a first connection part for connecting to the outside, and a first extension part extending from the first connection part,
The first connection part is provided on the second semiconductor via an insulating part made of a dielectric multilayer film so as not to be directly electrically connected to the first semiconductor,
The first extending portion is connected directly to the non-conducting region provided on the second semiconductor via the insulating portion and the first semiconductor in the opening in order from the first connecting portion side. A conduction region ;
In a cross-sectional view in a direction perpendicular to the direction in which the first extending portion extends,
The first extending portion has a first narrow region and a first wide region in order from the first semiconductor side,
The first electrode has a first light-transmitting portion wider than the first narrow region between the first semiconductor and the first extending portion,
A light emitting device, wherein a first reflecting portion is embedded in the first narrow region.
前記第２延伸部は、前記第１延伸部の両側に配置されていることを特徴とする請求項２に記載の発光素子。 The first extending portion extends toward the second connecting portion,
The light emitting device according to claim 2, wherein the second extending portion is disposed on both sides of the first extending portion.
前記第１接続部が前記長手方向の一方の端部近傍に設けられ、前記第２接続部が前記長手方向の他方の端部近傍に設けられていることを特徴とする請求項２又は３に記載の発光素子。 In a plan view, the shape of the light emitting element is a rectangle whose longitudinal direction is a direction connecting the first connection portion and the second connection portion,
The first connection portion is provided in the vicinity of one end portion in the longitudinal direction, and the second connection portion is provided in the vicinity of the other end portion in the longitudinal direction. The light emitting element of description.
前記第２延伸部は、前記第２半導体側から順に第２幅狭領域と第２幅広領域とを有し、
前記第２電極は、前記第２半導体と前記第２延伸部との間に、前記第２幅狭領域より幅が広い第２透光部を有し、
前記第２幅狭領域には、第２反射部が埋設されていることを特徴とする請求項２から６のいずれかに記載の発光素子。 In a cross-sectional view in a direction perpendicular to the direction in which the second extending portion extends,
The second extending portion has a second narrow region and a second wide region in order from the second semiconductor side,
The second electrode has a second light transmissive portion wider than the second narrow region between the second semiconductor and the second extension portion,
7. The light emitting device according to claim 2, wherein a second reflecting portion is embedded in the second narrow region.
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