JP5734079B2 - Electron beam evaporation system - Google Patents

Description

  The present invention relates to an electron beam vapor deposition apparatus for depositing a vapor deposition material on a substrate from an oblique direction.

  The oblique vapor deposition method is a film forming method in which vapor deposition material fine particles evaporated by an evaporation source are incident on the substrate surface from an oblique direction, and is widely used, for example, for forming an inorganic alignment film for a liquid crystal substrate (for example, Patent Documents). 1-4).

  In the oblique deposition method, the film is formed in a state where the substrate is disposed obliquely with respect to the evaporation source. As an evaporation source, for example, an electron beam evaporation source that evaporates a deposition material by irradiation with an electron beam is widely used. In this case, the angle of incidence of the vapor deposition material incident on the substrate changes between the position farthest from the evaporation source and the position closest to the evaporation source, which causes the distribution of film thickness and the film quality to fluctuate. Thus, it has been difficult to form a uniform vapor deposition film on the substrate surface.

  In order to solve such a problem, a slit having an opening for limiting the incident angle of the vapor deposition material is disposed between the evaporation source and the substrate, and the substrate is moved with respect to the slit, thereby vapor deposition on the substrate surface. There has been proposed a method in which a material is incident at a constant incident angle (see, for example, Patent Documents 1 and 3).

JP 2006-330411 A JP 2010-33015 A JP 2010-85558 A JP 2010-181752 A

  In recent years, the substrate size has been increased, and accordingly, not only the uniformity of the thickness of the deposited film but also the use efficiency and the processing efficiency of the deposited material are required to be improved.

  In view of the circumstances as described above, an object of the present invention is to provide an electron beam vapor deposition apparatus capable of improving the use efficiency and processing efficiency of a vapor deposition material while forming a vapor deposition film with a uniform thickness and uniform film quality. There is to do.

In order to achieve the above object, an electron beam evaporation apparatus according to an aspect of the present invention includes a chamber, a transport mechanism, a first container, a first mask, and a first electron beam forming mechanism. .
The transport mechanism includes a support member that supports the substrate inside the chamber, and a drive source that transports the support member in a first direction.
The first container is disposed inside the chamber and contains a first vapor deposition material.
The first mask is disposed between the support member and the first container, and regulates a film formation region of the first vapor deposition material on the substrate supported by the support member.
The first electron beam forming mechanism includes a first electron gun installed in the chamber and emitting a first electron. The first electron beam forming mechanism includes a first beam line in which the first electrons are incident on the first container from a second direction from the first mask side toward the first container side. Form.

It is a schematic sectional drawing which shows the electron beam vapor deposition apparatus which concerns on the 1st Embodiment of this invention. In the said electron beam vapor deposition apparatus, it is the schematic which shows the relationship between the incident direction of the electron beam with respect to the container which accommodates vapor deposition material, and the emission direction (vapor flow density direction) of an evaporation particle. (A), (B) is a schematic diagram explaining the relationship between the incident energy of an electron beam and the diffusion angle of vaporized particles (vapor flow density of vaporized particles) in the electron beam evaporation apparatus. It is a schematic sectional drawing which shows the example of 1 structure of the electron beam vapor deposition apparatus which concerns on the 2nd Embodiment of this invention. It is a schematic sectional drawing which shows the other structural example of the electron beam vapor deposition apparatus which concerns on the 2nd Embodiment of this invention. It is a schematic sectional drawing which shows the electron beam vapor deposition apparatus which concerns on the 3rd Embodiment of this invention. It is a schematic sectional drawing which shows the electron beam vapor deposition apparatus which concerns on the 4th Embodiment of this invention. It is a schematic sectional drawing which shows the electron beam vapor deposition apparatus which concerns on the 5th Embodiment of this invention.

An electron beam evaporation apparatus according to an embodiment of the present invention includes a chamber, a transport mechanism, a first container, a first mask, and a first electron beam forming mechanism.
The transport mechanism includes a support member that supports the substrate inside the chamber, and a drive source that transports the support member in a first direction.
The first container is disposed inside the chamber and contains a first vapor deposition material.
The first mask is disposed between the support member and the first container, and regulates a film formation region of the first vapor deposition material on the substrate supported by the support member.
The first electron beam forming mechanism includes a first electron gun installed in the chamber and emitting a first electron. The first electron beam forming mechanism includes a first beam line in which the first electrons are incident on the first container from a second direction from the first mask side toward the first container side. Form.

  In the electron beam evaporation apparatus, the substrate is supported by the support member of the transport mechanism, and is transported in the first direction by the driving unit. The first vapor deposition material accommodated in the container is evaporated by being irradiated with the first electron beam, and is deposited on the surface of the substrate on the support member through the first mask. The first mask regulates a film formation region on the substrate by limiting an incident angle of the first vapor deposition material with respect to the substrate. Since the substrate is transported by the transport mechanism, the film formation region moves in the direction opposite to the transport direction. As a result, the first vapor deposition material is formed on the entire surface of the substrate with a uniform thickness and uniform film quality. Here, the film quality means, for example, the film density, the refractive index of the film, the optical characteristics of the film, the barrier property of the film, the resistance value of the film, the crystal orientation of the film, and the like.

  On the other hand, the first electron beam forming mechanism forms a first beam line through which the first electrons enter the first container from the second direction. Accordingly, the evaporated particles of the first vapor deposition material are emitted in a direction from the irradiation point of the first electron beam toward the first mask (a direction opposite to the second direction). Thereby, since the emission ratio (vapor flow density) of the vapor deposition material from the container toward the first mask is increased, the use efficiency of the vapor deposition material is increased.

  As described above, according to the electron beam evaporation apparatus, it is possible to improve the use efficiency of the evaporation material while forming the evaporation film with a uniform thickness and a uniform film quality. The electron beam evaporation apparatus can be applied not only to the step of forming an alignment film for a liquid crystal substrate, but also to the step of selectively forming an evaporation material on the upper surface of a three-dimensional structure formed on the surface of the substrate. is there.

The support member may include a plurality of substrate support portions arranged along the first direction.
Thus, continuous film formation processing can be performed on a plurality of substrates, and the processing amount can be improved.

The electron beam evaporation apparatus may further include a second container, a second mask, and a second electron beam forming mechanism.
The second container contains a second vapor deposition material.
The second mask is arranged farther downstream in the first direction than the first mask, and forms a film formation region of the second vapor deposition material on the substrate supported by the support member. regulate.
The second electron beam forming mechanism includes a second electron gun that is installed in the chamber and emits second electrons. The second electron beam forming mechanism includes a second beam line on which the second electrons are incident on the second container from a third direction from the second mask side toward the second container side. Form.

  The second vapor deposition material may be the same material as the first vapor deposition material, or may be a different material. When the first vapor deposition material and the second vapor deposition material are made of the same kind of material, a vapor deposition film having a relatively thick and uniform film quality can be easily formed on the substrate. On the other hand, when the first vapor deposition material and the second vapor deposition material are made of different materials, a multilayer film composed of different vapor deposition films can be easily formed on the substrate.

  The opening of the first mask and the opening of the second mask may be the same or different. For example, in the process of selectively forming a deposition material on the upper surface of a three-dimensional structure formed on the substrate surface, the upstream mask opening can be made wider by making the downstream mask opening wider than the upstream mask opening. The formed deposited film can be covered with the deposited film formed by the downstream mask.

  The substrate transport direction (first direction) is not particularly limited, and may be the longitudinal direction or the lateral direction of the chamber. The substrate transport direction may be a direction parallel to the substrate surface or a direction intersecting the substrate surface.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

<First Embodiment>
FIG. 1 is a schematic sectional view showing an electron beam evaporation apparatus according to the first embodiment of the present invention. In the figure, an X axis and a Y axis indicate horizontal directions orthogonal to each other, and a Z axis indicates a vertical direction.

  The electron beam evaporation apparatus 10 of the present embodiment includes a chamber 11, a transport mechanism 12, an electron beam forming mechanism 15 (first electron beam forming mechanism), a container 17 (first container), and a mask 19 (first container). 1 mask).

The inside of the chamber 11 is depressurized to a predetermined pressure (for example, 10 ⁻⁵ to 10 ⁻² Pa) by the vacuum pump 5. A support member 13 that supports the substrate S is installed inside the chamber 11. The support member 13 is configured to be movable in the Z-axis direction (first direction) by a drive unit 14 installed on the upper portion of the chamber 11. A transport mechanism 12 is configured by the support member 13 and the drive unit 14.

  The support member 13 is composed of, for example, a single or a plurality of linear members such as a chain, a wire, and a rope. The drive unit 14 includes a drum that winds up the support member 13, a motor that drives the drum, and the like. Alternatively, the support member 13 may be an endless belt that is bridged between a drive pulley installed at the upper part of the chamber 11 and a driven pulley installed at the lower part of the chamber 11. In this case, the drive unit 14 includes the drive pulley, the driven pulley, a motor that drives the drive pulley, and the like.

  The support member 13 includes a substrate support portion 13a that supports the substrate S in the vertical direction. As a result, the substrate S is supported by the support member 13 so as to be transportable in the height direction (Z-axis direction) of the chamber 11.

  In the present embodiment, the substrate S is a rectangular glass substrate having a horizontal direction in the Y-axis direction and a vertical direction in the Z-axis direction. The size of the substrate S is not particularly limited. For example, the size is 500 mm or more in length and 400 mm or more in width. In addition, a semiconductor wafer or the like may be used as the substrate S.

  A container 17 is installed inside the chamber 11. The container 17 is configured by a hearth or a crucible in which a recess for accommodating the vapor deposition material M is formed. Examples of the vapor deposition material M include inorganic materials such as metals, metal compounds, and ceramics, and organic materials such as synthetic resins, and all materials that can be evaporated by irradiation with an electron beam are applicable.

  The electron beam forming mechanism 15 includes an electron gun 16 that emits an electron beam e and a deflection coil 18 that deflects the electron beam e.

  The electron gun 16 generates the vaporized particles MP of the vapor deposition material M by irradiating the vapor deposition material M accommodated in the container 17 with the electron beam e. The electron gun 16 is constituted by a piercing electron gun, and is installed on the side wall 11a of the chamber 11 facing the mask 19 with the evaporation chamber R2 interposed therebetween. The piercing electron gun has an advantage of long continuous operation time. Further, since the pierce-type electron gun has an electron beam focusing mechanism therein, it is not necessary to separately install a mechanism for focusing the electron beam.

  Furthermore, the pierce-type electron gun has a high electron beam density and is excellent in electron beam transportability. In addition, since a differential pumping system can be installed in the electron gun, the atmosphere of the beam generating section can be kept stable even in the case of introducing oxygen for vapor deposition or the case of vapor deposition of oxide, and the electron beam is stabilized. In addition, a gate valve for separating the electron gun and the evaporation chamber may be installed. In this case, since the inside of the electron gun can be kept in a vacuum even when the evaporation chamber is opened to the atmosphere, the atmosphere of the beam generating portion can be kept stable.

  The electron gun is not limited to a piercing electron gun, and may be a transverse electron gun. In this case, the electron gun is installed at the bottom of the chamber 11 so as to be adjacent to the container 17, for example. The transverse type electron gun has an advantage that it is inexpensive although the continuous operation time is shorter than the pierce type electron gun.

  The deflection coil 18 is disposed in the vicinity of the container 17 and forms a magnetic field that deflects the electron beam e. The deflection coil 18 deflects the electron beam e emitted from the electron gun 16 so as to be folded back toward the side wall 11a. Thus, the electron beam forming mechanism 15 forms a beam line in which the electron beam e enters the evaporation point P of the vapor deposition material M from the direction from the mask 19 side toward the container 17 (second direction).

  The magnetic field for deflecting the electron beam e may be formed by a permanent magnet installed in the vicinity of the container 17. Further, the deflection coil 18 and the permanent magnet may be installed outside the chamber 11 as long as they are in the vicinity of the container 17.

  Next, the mask 19 is disposed between the support member 13 and the container 17. The mask 19 is formed of a plate member parallel to the YZ plane, and forms in the chamber 11 a transfer chamber R1 for transferring the substrate S and an evaporation chamber R2 in which the container 17 is installed.

  The mask 19 has an opening 19a (first opening) that restricts the entrance of the evaporated particles MP from the evaporation chamber R2 to the transfer chamber R1. The opening 19a has a rectangular slit shape having a width direction in the Y-axis direction and a length direction in the Z-axis direction. The opening 19a defines a film formation region of the substrate S supported by the support member 13 in the transfer chamber R1, and limits the incident angle of the evaporated particles MP incident on the surface of the substrate S from the container 17 to a predetermined angle range. . The formation position of the opening 19a is not particularly limited, but in the present embodiment, the opening 19a is provided downstream of the container 17 in the substrate transport direction.

  The incident angle of the evaporated particles MP passing through the opening 19a with respect to the substrate S is appropriately set within an angle range in which uniformity of the film thickness on the substrate S is obtained. Here, the incident angle refers to the incident angle of the evaporated particles MP with respect to the normal of the substrate surface, and is, for example, 60 degrees or more and less than 90 degrees. The incident angle of the vaporized particles MP with respect to the substrate S depends on, for example, the facing distance between the mask 19 and the container 17, the height between the opening 19a and the container 17, the incident direction of the electron beam e with respect to the vapor deposition material M, and the like. Determined.

  The mask 19 has a shutter 19b that can open and close the opening 19a. In the illustrated example, the shutter 19b is installed on the evaporation chamber R2 side of the mask 19, but may be installed on the transfer chamber R1 side.

  Moreover, the electron beam vapor deposition apparatus 10 of this embodiment has a control unit (not shown). The control unit is configured by a computer, for example, and controls each operation of the drive unit 14 of the transport mechanism 12, the electron gun 16, the deflection coil 18, the shutter 19b, the vacuum pump 5, and the like.

In the electron beam evaporation apparatus 10 configured as described above, the substrate S is supported by the substrate support portion 13a of the support member 13 with the film formation surface facing the mask 19 side. A vapor deposition material M is accommodated in the container 17. Then, after the inside of the chamber 11 is evacuated to a predetermined reduced pressure atmosphere (for example, 10 ⁻⁴ Pa) by driving the vacuum pump 5, a film forming process for the substrate S is performed.

  In the film forming process, first, the opening 19a of the mask 19 is closed by the shutter 19b. The electron beam forming mechanism 15 emits the electron beam e emitted from the electron gun 16 and deflects the electron beam e by the deflection coil 18 so that the electron beam e is evaporated from the direction from the mask 19 side toward the container 17 side. A beam line to be incident on M is formed. Thereby, the evaporation particles MP of the vapor deposition material M are generated, and the evaporation particles MP are scattered from the container 17.

  FIG. 2 is a schematic diagram showing the relationship between the incident direction of the electron beam e with respect to the container 17 and the emission direction of the vaporized particles MP (the direction of vapor flow density). At the evaporation point P of the vapor deposition material M irradiated with the electron beam e, a depression Ma having a main axis direction corresponding to the incident direction of the electron beam e is formed. On the other hand, the evaporated particles MP of the vapor deposition material M are scattered along the main axis direction of the depression Ma. As a result, in the present embodiment, the evaporated particles MP fly with directivity toward the opening 19 a side of the mask 19 by the electron beam forming mechanism 15.

  Further, in the film forming process, the substrate S is transferred together with the support member 13 in the Z direction by the driving unit 14 in the transfer chamber R1. The conveyance speed of the board | substrate S is not specifically limited, For example, it is 0.6-2.6 m / min. When the film formation surface of the substrate S approaches the opening 19a of the mask 19, the shutter 19b is opened. Then, the evaporated particles MP scattered from the container 17 are incident on the deposition surface of the substrate S through the opening 19a and are deposited. The opening 19a regulates the film formation region on the substrate S by limiting the incident angle of the evaporated particles MP with respect to the substrate S. The substrate S is continuously transported by the transport mechanism 12, whereby the film formation region moves in a direction opposite to the transport direction of the substrate S. When the substrate S passes through the opening 19a, the opening 19a is closed again by the shutter 19b.

  As described above, the vapor deposition material M is uniformly formed on the entire surface of the substrate S. The deposited substrate S is carried out of the chamber 11, and a new substrate to be deposited is carried into the chamber 11 and supported by the substrate support portion 13 a of the support member 13. Then, a film forming process is performed on the substrate in the same manner as described above.

  Further, the mask 19 also has a function as a deposition preventing plate that prevents the deposition material M from adhering to the inner wall surface of the transfer chamber R1. Thereby, the adhesion of particles on the substrate transported in the transport chamber R1 can be suppressed.

  In the electron beam vapor deposition apparatus 10 of the present embodiment, an electron beam forming mechanism 15 that makes the electron beam e incident on the container 17 from the mask 19 side is provided. Accordingly, the evaporated particles MP of the vapor deposition material M are emitted in a direction from the irradiation point of the electron beam e toward the mask 19 (a direction opposite to the incident direction of the electron beam e). Thereby, since the emission ratio (vapor flow density) of the evaporated particles MP from the container 17 toward the mask 19 is increased, the use efficiency of the vapor deposition material M is increased.

  Further, the incident direction of the electron beam e to the container 17 may be a direction from the opening 19a of the mask 19 toward the container 17, and by forming such a beam line by the electron beam forming mechanism 15, the vapor deposition material is formed. The use efficiency of M can be further increased.

  Furthermore, by adjusting the energy (power density) of the electron beam e, it is also possible to adjust the diffusion angle (vapor flow density of the evaporated particles) of the evaporated particles MP scattered from the evaporation point P. 3A and 3B are schematic diagrams for explaining the relationship between the incident energy of the electron beam e and the diffusion angle of the evaporated particles MP. FIG. 3A shows an example in which an electron beam is incident on the deposition material M from the vertical direction with the first energy, and FIG. 3B shows an electron with a second energy higher than the first energy. An example when the beam is incident on the vapor deposition material M from the vertical direction is shown. The higher the incident energy of the electron beam, the smaller the diffusion angle of the evaporated particles MP. Therefore, the incident energy of the electron beam is appropriately set depending on the required film forming rate.

  As described above, according to the electron beam evaporation apparatus 10 of the present embodiment, it is possible to improve the use efficiency of the evaporation material while forming the evaporation film with a uniform thickness and a uniform film quality. Further, the electron beam evaporation apparatus 10 of the present embodiment has a three-dimensional structure formed on the substrate surface in addition to the step of forming an evaporation film formed by oblique evaporation such as an alignment film for a liquid crystal substrate. The present invention can also be applied to a process of selectively forming a vapor deposition material on the upper surface.

<Second Embodiment>
4 and 5 are schematic cross-sectional views showing an electron beam evaporation apparatus according to the second embodiment of the present invention. Hereinafter, configurations different from those of the first embodiment will be mainly described, and configurations similar to those of the above-described embodiment will be denoted by the same reference numerals, and description thereof will be omitted or simplified.

  In the electron beam evaporation apparatus 20A of the present embodiment, the support member 13 that supports the substrate S has a plurality of substrate support portions 13a and 13b. Each of the substrate support portions 13a and 13b is arranged at a predetermined interval along the transport direction of the substrate S in the transport chamber R1. In the present embodiment, the support member 13 includes two substrate support portions 13a and 13b. However, the present invention is not limited to this, and may include three or more substrate support portions.

  Also in the electron beam vapor deposition apparatus 20A of the present embodiment, the same operational effects as those of the first embodiment can be obtained. Further, according to the present embodiment, since a continuous film forming process can be performed on a plurality of substrates S, the processing amount can be improved. In this case, an in-line electron beam evaporation apparatus in which the load chamber and the unload chamber are adjacent to the chamber 11 along the transport direction of the substrate S may be configured.

  FIG. 5 is a schematic cross-sectional view showing a configuration example of the in-line electron beam evaporation apparatus. The illustrated inline electron beam evaporation apparatus 20 </ b> B includes a load chamber 101 and an unload chamber 102.

  The load chamber 101 is a chamber for loading the substrate S, and the inside is repeatedly switched between atmospheric pressure and a vacuum atmosphere. When the substrate S is set on the substrate support portion 13a, the inside of the load chamber 101 is at atmospheric pressure. Thereafter, the inside of the load chamber 101 is evacuated by the evacuation system 131, and the substrate S is transferred into the chamber 11 through the first partition valve 121. The first partition valve 121 is installed in the first intermediate chamber 111 in which the inside of the valve can be evacuated by the evacuation system 132. Thereby, when sealing the conveyance mechanism 12 when the first partition valve 121 is closed, the vacuum sealability of the load chamber 101 and the chamber 11 can be ensured.

  On the other hand, the unload chamber 102 is a chamber for taking out the substrate S to the atmospheric pressure, and the inside is repeatedly switched between the atmospheric pressure and the vacuum atmosphere. When the substrate S is taken out, the unload chamber 102 is at atmospheric pressure. Thereafter, the inside of the unload chamber 102 is evacuated by the evacuation system 134, and the substrate S is transferred from the chamber 11 into the unload chamber 102 via the second partition valve 122. The second partition valve 122 is installed in the second intermediate chamber 112 in which the inside of the valve can be evacuated by the evacuation system 133. In FIG. 5, the first partition valve 121 on the load chamber 101 side is shown in an open state, and the second partition valve 122 on the unload chamber 102 side is in a closed state.

  According to the above configuration, the chamber 11 can be kept in a vacuum at all times, so that the vapor deposition material M does not need to be exposed to the atmosphere. Thereby, stable vapor deposition becomes possible.

<Third Embodiment>
FIG. 6 is a schematic cross-sectional view showing an electron beam vapor deposition apparatus according to the third embodiment of the present invention. Hereinafter, configurations different from those of the first and second embodiments will be mainly described, and configurations similar to those of the above-described embodiments will be denoted by the same reference numerals, and description thereof will be omitted or simplified.

  The electron beam evaporation apparatus 30 of this embodiment includes a chamber 11, a transport mechanism 12, a first container 17, a second container 27, a first mask 19, a second mask 29, and a first mask. The electron beam forming mechanism 15 and the second electron beam forming mechanism 25 are provided.

  The first electron beam forming mechanism 15 includes a piercing electron gun 16 and a deflection coil 18. The electron gun 16 is installed on the side wall 11a of the chamber 11 and emits an electron beam e1 toward the mask 19 side. The 1st container 17 is arrange | positioned inside the chamber 11, and accommodates the 1st vapor deposition material M1. The deflection coil 18 deflects the electron beam e1 so that the electron beam e1 is incident from the mask 19 (for example, the first opening 19a) side toward the first container 17 side. By irradiating the first vapor deposition material M1 with the first electron beam e1, evaporated particles MP1 are generated.

  The second electron beam forming mechanism 25 has the same configuration as the first electron beam forming mechanism 15, and includes a pierce-type electron gun 26 and a deflection coil 28. The electron gun 26 is installed on the side wall 11a of the chamber 11 and emits an electron beam e2 toward the mask 19 side. The second container 27 is disposed above the first container 17 inside the chamber 11 and accommodates the second vapor deposition material M2. The deflection coil 28 deflects the electron beam e2 so that the electron beam e2 enters from the direction from the mask 29 (for example, the second opening 29a) side toward the second container 27 side. By irradiating the second vapor deposition material M2 with the second electron beam e2, evaporated particles MP2 are generated.

  The first mask 19 and the second mask 29 have a first opening 19a and a second opening 19b, respectively. The first mask 19 and the second mask 29 are arranged in alignment in the Z-axis direction, thereby partitioning the interior of the chamber 11 into a transfer chamber R1 and an evaporation chamber R2.

  The first opening 19a has a rectangular slit shape having a width direction in the Y-axis direction and a length direction in the Z-axis direction. The first opening 19a defines a film formation region of the substrate S supported by the support member 13 in the transfer chamber R1, and sets the incident angle of the evaporated particles MP1 incident on the surface of the substrate S from the first container 17 to a predetermined value. Limit to the angle range. Although the formation position of the first opening 19a is not particularly limited, in the present embodiment, the first opening 19a is provided downstream of the first container 17 in the substrate transport direction.

  Similarly, the second opening 29a has a rectangular slit shape having a width direction in the Y-axis direction and a length direction in the Z-axis direction. The second opening 29a defines a film formation region of the substrate S supported by the support member 13 in the transfer chamber R1, and determines an incident angle of the evaporated particles MP2 incident on the surface of the substrate S from the second container 27. Limit to the angle range. The formation position of the second opening 19a is not particularly limited, but in the present embodiment, the second opening 19a is provided downstream of the second container 27 in the substrate transport direction. Moreover, the dimension of the width direction of the 1st opening part 19a and the 2nd opening part 29a and the dimension of the length direction are each optimized by the kind of vapor deposition material.

  Note that the first mask 19 and the second mask 29 may be integrally formed. The first mask 19 and the second mask 29 may have shutters that can open and close the first opening 19a and the second opening 29a, respectively. In addition, a partition plate 31 is installed between the first mask 19 and the second mask 29 in order to prevent the evaporated particles MP1 of the first vapor deposition material M1 from reaching the second opening 29a. May be.

  The first vapor deposition material M1 and the second vapor deposition material M2 may be the same material or different materials. When the first vapor deposition material M1 and the second vapor deposition material M2 are made of the same kind of material, a relatively large vapor deposition film can be easily formed on the substrate S. On the other hand, when the first vapor deposition material M1 and the second vapor deposition material M2 are made of different materials, a multilayer film made of different vapor deposition films can be easily formed on the substrate S.

  According to the electron beam vapor deposition apparatus 30 of the present embodiment, the film deposition process using the first vapor deposition material M1 and the film deposition process using the second vapor deposition material M2 can be performed continuously in the process of transporting the substrate S. . Further, as shown in the figure, the processing amount can be increased by providing the support member 13 with a plurality of substrate support portions 13a and 13b. As a result, productivity can be improved.

  As described above, a transverse electron gun may be used as the electron gun in this embodiment. Specifically, when a low melting point metal or a sublimable material is used for the first vapor deposition material M1, a transverse electron gun may be used for vapor deposition of the first vapor deposition material M1. Alternatively, when a low melting point metal or a sublimation material is used for the second vapor deposition material M2, a transverse electron gun may be used for vapor deposition of the second vapor deposition material M2.

  In the present embodiment, the vapor deposition material M is two vapor deposition materials M1 and M2. However, of course, the vapor deposition material M is not limited to this, and may include three or more vapor deposition materials, a container, a mask, and an electron beam forming mechanism. In the present embodiment, as described in the second embodiment, an in-line electron beam evaporation apparatus in which the load chamber and the unload chamber are adjacent to the chamber 11 may be configured.

<Fourth Embodiment>
FIG. 7 is a schematic sectional view showing an electron beam evaporation apparatus according to the fourth embodiment of the present invention. Hereinafter, configurations different from those of the first embodiment will be mainly described, and configurations similar to those of the above-described embodiment will be denoted by the same reference numerals, and description thereof will be omitted or simplified.

  The electron beam vapor deposition apparatus 40 of this embodiment forms the vapor deposition material M on the substrate S while conveying the substrate S in the lateral direction of the chamber 11. Inside the chamber 11, a mask 39 that divides the transfer chamber R1 and the evaporation chamber R2 is disposed horizontally.

  The substrate S is supported by a tray 44 that runs on the guide rail 43 in the transfer chamber R1. The tray 44 is a frame having an open bottom, and is conveyed in the X-axis direction on the guide rail 43 by a driving unit (not shown) while supporting the peripheral edge of the substrate S. A belt conveyor, a chain conveyor, etc. may be used for a drive part. A plurality of trays 44 may be arranged on the guide rail 43 along the transport direction of the substrate S.

  The mask 39 has an opening 39a. The opening 39a has a rectangular slit shape having a length direction in the X-axis direction and a width direction in the Y-axis direction. The opening 39a defines a film formation region of the substrate S supported by the tray 44 in the transfer chamber R1, and restricts the incident angle of the evaporated particles MP incident on the surface of the substrate S from the container 17 to a predetermined angle range. The formation position of the opening 39a is not particularly limited, but in the present embodiment, the opening 39a is provided downstream of the container 17 in the substrate transport direction.

  The electron beam forming mechanism 35 of the present embodiment includes a piercing electron gun 36 and a deflection coil 38. The electron gun 36 is installed on the side wall 11b of the chamber 11 located on the downstream side in the substrate transport direction, and emits an electron beam e. The container 17 is disposed inside the chamber 11 and accommodates the vapor deposition material M. The deflection coil 38 deflects the electron beam e so that the electron beam e is incident from the mask 39 (for example, the opening 39a) side toward the container 17 side. By irradiating the vapor deposition material M with the electron beam e, evaporated particles MP are generated.

  Also in the electron beam vapor deposition apparatus 40 of the present embodiment configured as described above, the same operational effects as those of the above-described embodiments can be obtained.

<Fifth Embodiment>
FIG. 8 is a schematic sectional view showing an electron beam evaporation apparatus according to the fifth embodiment of the present invention. Hereinafter, configurations different from those of the first and second embodiments will be mainly described, and configurations similar to those of the above-described embodiments will be denoted by the same reference numerals, and description thereof will be omitted or simplified.

  In the electron beam vapor deposition apparatus 50 of the present embodiment, the substrate S is disposed at a predetermined angle (for example, 60 degrees or more and 90 degrees or less) with respect to the horizontal plane in the transfer chamber R1, and moves upward along a direction parallel to the surface. Be transported. The support member 13 that supports the substrate S includes a plurality of substrate support portions 13a and 13b, and is configured to be able to transport the substrate S while maintaining the predetermined angle.

  The mask 49 has an opening 49a on the top surface. The opening 49a has a rectangular slit shape having a width direction in the Y-axis direction and a length direction in the Z-axis direction. The opening 49a defines a film formation region of the substrate S supported by the support member 13 in the transfer chamber R1, and limits the incident angle of the evaporated particles MP incident on the surface of the substrate S from the container 17 to a predetermined angle range. . Although the formation position of the opening 49a is not particularly limited, in the present embodiment, the opening 49a is provided immediately above the container 17. The mask 49 has a shutter 49b that can open and close the opening 49a.

  The electron beam forming mechanism 45 of this embodiment includes a piercing electron gun 46 and a deflection coil 48. The electron gun 46 is installed on the side wall 11a of the chamber 11 and emits an electron beam e. The container 17 is disposed inside the chamber 11 and accommodates the vapor deposition material M. The deflection coil 48 deflects the electron beam e so that the electron beam e is incident from the mask 49 (for example, the opening 49a) side toward the container 17 side. By irradiating the vapor deposition material M with the electron beam e, evaporated particles MP are generated.

  Also in the electron beam vapor deposition apparatus 50 of the present embodiment configured as described above, the same operational effects as those of the above-described embodiments can be obtained.

  As mentioned above, although embodiment of this invention was described, of course, this invention is not limited to this, A various deformation | transformation is possible based on the technical idea of this invention.

  For example, in the above embodiment, the electron gun is installed on the side wall of the chamber facing the mask. However, the installation location of the electron gun is not particularly limited, and the electron beam incident from the mask side to the container (vapor deposition material) side is not limited. As long as the beam line can be formed, it may be installed at any position.

  Further, in the above embodiment, the mask opening is installed on the downstream side in the substrate transport direction as viewed from the container that stores the vapor deposition material. Instead, the mask opening is on the upstream side in the substrate transport direction. You may convey so that it may become. That is, for example, in the configuration of FIG. 8, the driving unit 14 is driven in the forward direction so that the substrate transport direction is in the direction of the arrow in the drawing, and after the film is formed once on the substrate S, the driving unit 14 is driven in the reverse direction. However, the film may be transferred to the substrate S so that the film can be formed a plurality of times by reciprocating the drive unit, such as forming a film on the substrate S again.

DESCRIPTION OF SYMBOLS 10,20,30,40,50 ... Electron beam evaporation apparatus 11 ... Chamber 12 ... Conveyance mechanism 13 ... Support member 13a, 13b ... Substrate support part 14 ... Drive part 15, 25, 35, 45 ... Electron beam formation mechanism 16, 26, 36, 46 ... electron gun 17, 27 ... container 19, 29, 39, 49 ... mask 19a, 29a, 39a, 49a ... opening M, M1, M2 ... vapor deposition material MP, MP1, MP2 ... vaporized particles

Claims (5)

An electron beam evaporation apparatus for evaporating an evaporation material on a substrate from an oblique direction ,
A chamber;
A transport mechanism having a support member that supports the substrate inside the chamber, and a drive unit that transports the support member in a first direction;
Has a first recess for accommodating the first deposition material, a first container arranged inside the chamber,
It has a first opening for regulating the deposition region of the first deposition material to the substrate supported on the support member, the first, which is disposed between the supporting member and the first vessel And the mask
Includes a first electron gun for emitting first electrons are installed in the chamber, the depth direction at an acute angle of said first from said opening side has suited to the first container side first recess From the second direction, a first beam line in which the first electrons enter the first container is formed , and the evaporated particles of the first vapor deposition material are directed in a direction opposite to the second direction. an electron beam evaporation apparatus and a first electron beam forming mechanism to emit. The electron beam evaporation apparatus according to claim 1,
The electron beam deposition apparatus, wherein the support member has a plurality of substrate support portions arranged along the first direction. The electron beam evaporation apparatus according to claim 1 or 2,
A second container having a second recess for containing a second vapor deposition material;
A second opening that regulates a film formation region of the second vapor deposition material with respect to the substrate supported by the support member, and is spaced further downstream in the first direction than the first mask; a second mask disposed Te,
Includes a second electron gun for emitting a second electron installed in the chamber, the depth direction at an acute angle of said second from said opening side has suited to the second container side second recess From the third direction formed, a second beam line is formed in which the second electrons are incident on the second container , and the evaporated particles of the second vapor deposition material are formed in a direction opposite to the third direction. electron beam vapor deposition apparatus further comprising a second electron beam forming mechanism to be emitted. The electron beam evaporation apparatus according to any one of claims 1 to 3,
The electron beam deposition apparatus, wherein the first direction is a longitudinal direction of the chamber. The electron beam evaporation apparatus according to any one of claims 1 to 3,
The first direction is a lateral direction of the chamber.
Electron beam evaporation system.

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