JP5726637B2

JP5726637B2 - Liquid processing apparatus and liquid processing method

Info

Publication number: JP5726637B2
Application number: JP2011116216A
Authority: JP
Inventors: 金子　聡; 聡金子
Original assignee: Tokyo Electron Ltd
Current assignee: Tokyo Electron Ltd
Priority date: 2011-05-24
Filing date: 2011-05-24
Publication date: 2015-06-03
Anticipated expiration: 2031-05-24
Also published as: JP2012244129A

Description

本発明は、基板を液処理する液処理装置、液処理方法に関する。 The present invention relates to a liquid processing apparatus and a liquid processing method for liquid processing a substrate.

半導体デバイスやフラットパネルディスプレイ（ＦＰＤ）の製造工程において、半導体ウエハやガラス基板などの基板を液処理する液処理装置が使用されている。液処理装置としては、基板を水平に支持して回転させ、回転する基板に処理液を供給するものがある。 In a manufacturing process of a semiconductor device or a flat panel display (FPD), a liquid processing apparatus for liquid processing a substrate such as a semiconductor wafer or a glass substrate is used. Some liquid processing apparatuses support and rotate a substrate horizontally and supply a processing liquid to the rotating substrate.

この液処理装置は、基板を回転させることにより、基板上に供給した処理液を外側に広げて液膜を形成し、処理液を基板の外方に離脱させる。回転する基板から遠心力で振り切られた処理液は、カップ内に回収される。 In this liquid processing apparatus, by rotating the substrate, the processing liquid supplied onto the substrate is spread outward to form a liquid film, and the processing liquid is released to the outside of the substrate. The processing liquid shaken off by the centrifugal force from the rotating substrate is collected in the cup.

ところで、基板を回転させた状態で、基板表面に処理液を供給すると、基板の上方に処理液のミストや蒸気が飛散する。飛散したミストや蒸気は、再度基板上に付着し、基板にパーティクルが発生する原因となる。 By the way, when the processing liquid is supplied to the substrate surface while the substrate is rotated, mist and vapor of the processing liquid are scattered above the substrate. The scattered mist and vapor adhere to the substrate again and cause particles to be generated on the substrate.

そこで、カップ内を排気することで、基板の上方からカップに向かう気流を形成し、基板の上方におけるミストや蒸気の発生を抑制する液処理装置が開発されている（例えば、特許文献１参照）。 In view of this, a liquid processing apparatus has been developed that exhausts the inside of the cup to form an airflow from above the substrate toward the cup and suppress the generation of mist and vapor above the substrate (see, for example, Patent Document 1). .

特開２００９−３８０８３号公報JP 2009-38083 A

基板の上方における気流の最適な状態は、液処理の工程毎に異なる。例えば、基板の液処理においては、基板に処理液を供給する各種の処理液供給工程と、基板を高速回転させて基板から処理液を遠心力で振り切る乾燥工程とがあるが、各種の処理液供給工程と乾燥工程では、基板の上方における気流の最適な状態が異なる。 The optimal state of the airflow above the substrate differs for each liquid processing step. For example, in the liquid processing of a substrate, there are various processing liquid supply steps for supplying the processing liquid to the substrate and a drying step for rotating the substrate at high speed and shaking the processing liquid from the substrate by centrifugal force. In the supply process and the drying process, the optimum state of the airflow above the substrate is different.

しかしながら、従来の構成では、液処理の工程毎に、基板の上方における気流の状態を最適化するため、条件を変えることが困難であった。 However, in the conventional configuration, it is difficult to change the conditions for optimizing the airflow state above the substrate for each liquid processing step.

本発明は、上記課題に鑑みてなされたものであって、液処理の工程に応じて基板の上方における気流の状態を最適化可能な液処理装置、および液処理方法を提供することを目的とする。 The present invention has been made in view of the above problems, and an object of the present invention is to provide a liquid processing apparatus and a liquid processing method capable of optimizing the state of the airflow above the substrate according to the liquid processing steps. To do.

上記課題を解決するため、本発明の第１の態様は、
基板を液処理する液処理装置において、
前記基板を水平に支持し、回転可能な支持部材と、
該支持部材を回転させる回転機構と、
前記支持部材により支持される前記基板に上方から処理液を供給する液供給部材と、
前記支持部材の上方に配置され、前記支持部材と一体的に回転可能に連結され、前記支持部材の外周部との間に環状間隙を形成する間隙形成部材と、
前記環状間隙を介して、回転する前記基板から振り切られる前記処理液を回収するカップと、
前記間隙形成部材を昇降させる昇降機構とを有し、
前記昇降機構は、前記支持部材に支持される前記基板の上方における気流の状態が前記基板に供給する前記処理液の種類および／または前記基板の回転数に応じたものとなるように、前記回転機構によって前記支持部材と前記間隙形成部材とを一体的に回転させた状態で前記間隙形成部材を上昇または下降させることにより、前記環状間隙を前記基板に供給する前記処理液の種類および／または前記基板の前記回転数に応じたものに調節する、液処理装置を提供する。
In order to solve the above problems, the first aspect of the present invention is:
In a liquid processing apparatus for liquid processing a substrate,
A support member that supports the substrate horizontally and is rotatable;
A rotation mechanism for rotating the support member;
A liquid supply member for supplying a processing liquid from above to the substrate supported by the support member;
A gap forming member that is disposed above the support member, is rotatably coupled integrally with the support member, and forms an annular gap with an outer periphery of the support member;
Through the annular gap, and a cup for collecting the processing liquid shaken off from the substrate to be rotated,
An elevating mechanism for elevating and lowering the gap forming member,
The elevating mechanism rotates the rotation mechanism so that the state of the airflow above the substrate supported by the support member corresponds to the type of the processing liquid supplied to the substrate and / or the rotation speed of the substrate. By raising or lowering the gap forming member in a state where the support member and the gap forming member are integrally rotated by a mechanism, the kind of the processing liquid that supplies the annular gap to the substrate and / or the Provided is a liquid processing apparatus which adjusts the substrate according to the number of rotations .

また、本発明の第２の態様は、
基板を液処理する液処理方法において、
前記基板を支持部材により水平に支持する工程と、
前記支持部材、前記支持部材に支持される前記基板、および前記支持部材の外周部との間に環状間隙を形成する間隙形成部材を一体的に回転させる工程と、
回転する前記基板の上方に配置される液供給部材から、前記基板に処理液を供給する工程と、
前記環状間隙を介して、回転する前記基板から振り切られる前記処理液をカップに回収すると共に、前記カップ内を排気する工程と、
前記支持部材に支持される前記基板の上方における気流の状態が前記基板に供給する前記処理液の種類および／または前記基板の回転数に応じたものとなるように、前記支持部材と前記間隙形成部材とを一体的に回転させた状態で前記間隙形成部材を前記支持部材に対して相対的に上昇または下降させることにより、前記環状間隙を前記基板に供給する前記処理液の種類および／または前記基板の前記回転数に応じたものに調節する工程とを有する液処理方法を提供する。

In addition, the second aspect of the present invention includes
In a liquid processing method for liquid processing a substrate,
Supporting the substrate horizontally by a support member;
A step of integrally rotating a gap forming member that forms an annular gap between the support member, the substrate supported by the support member, and an outer peripheral portion of the support member;
From the liquid supply member disposed above the substrate to be rotated, a step of supplying the processing liquid to the substrate,
Through the annular gap, as well as collecting the processing liquid shaken off from the substrate to rotate the cup, a step of exhausting the inside of the cup,
Formation of the gap between the support member and the support member so that the state of the airflow above the substrate supported by the support member corresponds to the type of the processing liquid supplied to the substrate and / or the number of rotations of the substrate. The type of the processing liquid for supplying the annular gap to the substrate and / or the lowering the gap forming member relative to the support member while the member is rotated integrally with the member. And a step of adjusting the substrate according to the number of rotations of the substrate .

本発明によれば、液処理の工程に応じて基板の上方における気流の状態を最適化可能な液処理装置、および液処理方法を提供することができる。 ADVANTAGE OF THE INVENTION According to this invention, the liquid processing apparatus and liquid processing method which can optimize the state of the airflow above a board | substrate according to the process of a liquid processing can be provided.

本発明の一実施形態による液処理装置を含む基板処理装置を示す上面図The top view which shows the substrate processing apparatus containing the liquid processing apparatus by one Embodiment of this invention. 本発明の一実施形態による液処理装置を示す断面図Sectional drawing which shows the liquid processing apparatus by one Embodiment of this invention 図２の要部を示す断面図Sectional drawing which shows the principal part of FIG. ウエハ支持部材１０と、カバー２０の連結ピン２６との位置関係を示す上面図A top view showing the positional relationship between the wafer support member 10 and the connecting pins 26 of the cover 20 第１変形例による液処理装置の要部を示す断面図Sectional drawing which shows the principal part of the liquid processing apparatus by a 1st modification 第２変形例による液処理装置の環状間隙を拡大して示す断面図Sectional drawing which expands and shows the cyclic | annular space | gap of the liquid processing apparatus by a 2nd modification 第３変形例による液処理装置の要部を示す断面図Sectional drawing which shows the principal part of the liquid processing apparatus by a 3rd modification 液供給部材３０Ｃを示す上面図Top view showing liquid supply member 30C 第４変形例による液処理装置を示す断面図Sectional drawing which shows the liquid processing apparatus by a 4th modification

以下、本発明を実施するための形態について図面を参照して説明するが、各図面において、同一のまたは対応する構成については同一のまたは対応する符号を付して説明を省略する。 DESCRIPTION OF EMBODIMENTS Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings. In each of the drawings, the same or corresponding components are denoted by the same or corresponding reference numerals, and description thereof is omitted.

図１は、本発明の一実施形態による液処理装置を含む基板処理装置を示す上面図である。 FIG. 1 is a top view showing a substrate processing apparatus including a liquid processing apparatus according to an embodiment of the present invention.

基板処理装置１００は、複数のウエハＷを収容する複数の（図１では、４つの）ウエハキャリアＣが載置されるキャリアステーションＳ１と、キャリアステーションＳ１と後述の液処理ステーションＳ３との間でウエハＷを受け渡す搬出入ステーションＳ２と、本発明の一実施形態による液処理装置１が配置される液処理ステーションＳ３とを備える。 The substrate processing apparatus 100 includes a carrier station S1 on which a plurality of (four in FIG. 1) wafer carriers C that accommodate a plurality of wafers W are placed, and a carrier station S1 and a liquid processing station S3 described later. A loading / unloading station S2 for delivering the wafer W and a liquid processing station S3 in which the liquid processing apparatus 1 according to the embodiment of the present invention is disposed.

搬出入ステーションＳ２には、ウエハキャリアＣからウエハＷを搬出してステージ１０１に載置し、また、ステージ１０１のウエハＷを取り上げてウエハキャリアＣへ搬入する搬送機構１０２を有している。搬送機構１０２は、ウエハＷを保持する保持アーム１０３を有している。搬送機構１０２は、ウエハキャリアＣの配列方向（図中のＸ方向）に延びるガイド１０４に沿って保持アーム１０３を移動することができる。また、搬送機構１０２は、Ｘ方向に垂直な方向（図中のＹ方向）および上下方向に保持アーム１０３を移動させることができ、水平面内で保持アーム１０３を回転させることができる。 The loading / unloading station S2 has a transport mechanism 102 for unloading the wafer W from the wafer carrier C and placing it on the stage 101, and picking up the wafer W from the stage 101 and loading it into the wafer carrier C. The transfer mechanism 102 has a holding arm 103 that holds the wafer W. The transfer mechanism 102 can move the holding arm 103 along a guide 104 that extends in the arrangement direction of the wafer carriers C (X direction in the drawing). Further, the transport mechanism 102 can move the holding arm 103 in a direction perpendicular to the X direction (Y direction in the drawing) and in the vertical direction, and can rotate the holding arm 103 in a horizontal plane.

液処理ステーションＳ３は、Ｙ方向に延びる搬送室１０５と、搬送室１０５の両側に設けられた複数の液処理装置１とを有している。搬送室１０５には、搬送機構１０６が設けられ、搬送機構１０６は、ウエハＷを保持する保持アーム１０７を有している。搬送機構１０６は、搬送室１０５に設けられＹ方向に延びるガイド１０８に沿って保持アーム１０７を移動することがでる。また、搬送機構１０６は、保持アーム１０７をＸ方向に移動することができ、水平面内で回転させることができる。搬送機構１０６は、搬出入ステーションＳ２の受け渡しステージ１０１と各液処理装置１との間でウエハＷを搬送する。 The liquid processing station S3 includes a transfer chamber 105 extending in the Y direction, and a plurality of liquid processing apparatuses 1 provided on both sides of the transfer chamber 105. A transfer mechanism 106 is provided in the transfer chamber 105, and the transfer mechanism 106 has a holding arm 107 that holds the wafer W. The transport mechanism 106 can move the holding arm 107 along a guide 108 provided in the transport chamber 105 and extending in the Y direction. Further, the transport mechanism 106 can move the holding arm 107 in the X direction, and can rotate it in a horizontal plane. The transport mechanism 106 transports the wafer W between the delivery stage 101 of the carry-in / out station S 2 and each liquid processing apparatus 1.

上記構成の基板処理装置１００においては、キャリアステーションＳ１に載置されるウエハキャリアＣから搬送機構１０２によってウエハＷが取り出されてステージ１０１に載置される。ステージ１０１上のウエハＷは、液処理ステーションＳ３内の搬送機構１０６により液処理装置１に搬入され、ウエハＷの表面が液処理される。液処理後に、ウエハＷは、搬入時と逆の経路（手順）によりウエハキャリアＣへ戻される。また、一のウエハＷが液処理される間に、他のウエハＷが他の液処理装置１へ順次搬送され、他のウエハＷに対して液処理が行われる。このため、高いスループットで、ウエハＷを液処理することができる。 In the substrate processing apparatus 100 having the above configuration, the wafer W is taken out from the wafer carrier C placed on the carrier station S1 by the transport mechanism 102 and placed on the stage 101. The wafer W on the stage 101 is carried into the liquid processing apparatus 1 by the transfer mechanism 106 in the liquid processing station S3, and the surface of the wafer W is subjected to liquid processing. After the liquid processing, the wafer W is returned to the wafer carrier C through a route (procedure) reverse to that at the time of loading. Further, while one wafer W is subjected to liquid processing, the other wafers W are sequentially transferred to the other liquid processing apparatus 1 and liquid processing is performed on the other wafers W. For this reason, the wafer W can be liquid-processed with high throughput.

図２は、本発明の一実施形態による液処理装置を示す断面図である。図３は、図２の要部を示す断面図である。図４は、ウエハ支持部材１０と、カバー２０の連結ピン２６との位置関係を示す上面図である。 FIG. 2 is a cross-sectional view showing a liquid processing apparatus according to an embodiment of the present invention. FIG. 3 is a cross-sectional view showing a main part of FIG. FIG. 4 is a top view showing the positional relationship between the wafer support member 10 and the connecting pins 26 of the cover 20.

液処理装置１は、ウエハＷを水平に支持するウエハ支持部材１０と、ウエハ支持部材１０を回転させるモータＭと、ウエハ支持部材１０と一体的に回転可能に連結され、ウエハ支持部材１０と共にウエハＷを液処理するための処理室Ｓを形成するカバー２０とを有する。また、液処理装置１は、処理室Ｓ内においてウエハＷに上方から処理液を供給する液供給部材３０と、ウエハ支持部材１０の外周部１３とカバー２０の外周部２３との間に形成される環状間隙ＧＰを取り囲むカップ４０とを備える。カップ４０内は、例えば工場側の設備として設けられる排気機構Ｅによって排気される。排気機構Ｅが液処理装置１から排気する気体の流量は一定である。 The liquid processing apparatus 1 is connected to a wafer support member 10 that horizontally supports the wafer W, a motor M that rotates the wafer support member 10, and the wafer support member 10 so as to be rotatable integrally with the wafer support member 10. And a cover 20 that forms a processing chamber S for liquid processing of W. Further, the liquid processing apparatus 1 is formed between a liquid supply member 30 for supplying a processing liquid to the wafer W from above in the processing chamber S, and an outer peripheral portion 13 of the wafer support member 10 and an outer peripheral portion 23 of the cover 20. And a cup 40 surrounding the annular gap GP. The inside of the cup 40 is exhausted by an exhaust mechanism E provided as equipment on the factory side, for example. The flow rate of the gas exhausted from the liquid processing apparatus 1 by the exhaust mechanism E is constant.

この液処理装置１では、ウエハ支持部材１０およびカバー２０が処理室Ｓを形成した状態で、モータＭがウエハ支持部材１０、ひいては、カバー２０やウエハＷを回転させる。液供給部材３０は、回転するウエハＷに上方から処理液を供給する。回転するウエハＷに供給された処理液は、遠心力でウエハＷの外方に振り切られ、環状間隙ＧＰを通って、カップ４０内に回収される。このとき、排気機構Ｅがカップ４０内を排気することで、環状間隙ＧＰを介して、処理室Ｓ内のウエハＷの上方空間からカップ４０に向かう気流を形成する。この気流は、処理液をカップ４０へ搬送する役割を果たす。以下、液処理装置１の各構成について説明する。 In the liquid processing apparatus 1, the motor M rotates the wafer support member 10, and thus the cover 20 and the wafer W, with the wafer support member 10 and the cover 20 forming the processing chamber S. The liquid supply member 30 supplies the processing liquid to the rotating wafer W from above. The processing liquid supplied to the rotating wafer W is spun off to the outside of the wafer W by centrifugal force, and is collected in the cup 40 through the annular gap GP. At this time, the exhaust mechanism E exhausts the inside of the cup 40, thereby forming an air flow from the upper space of the wafer W in the processing chamber S toward the cup 40 through the annular gap GP. This air current plays a role of conveying the processing liquid to the cup 40. Hereinafter, each structure of the liquid processing apparatus 1 is demonstrated.

ウエハ支持部材１０は、ウエハＷを水平に支持し、ウエハＷと共に回転可能なものである。ウエハ支持部材１０は、水平に配置される板形状のプレート部１１と、プレート部１１の下面側に取り付けられる回転軸部１２と、プレート部１１の外縁から上方に延びる筒形状の外周部１３とを有している。外周部１３は、例えば円筒形状に形成されており、ウエハＷの外径よりも僅かに大きい内径を有する。 The wafer support member 10 supports the wafer W horizontally and can rotate together with the wafer W. The wafer support member 10 includes a plate-shaped plate portion 11 arranged horizontally, a rotary shaft portion 12 attached to the lower surface side of the plate portion 11, and a cylindrical outer peripheral portion 13 extending upward from the outer edge of the plate portion 11. have. The outer peripheral portion 13 is formed in a cylindrical shape, for example, and has an inner diameter slightly larger than the outer diameter of the wafer W.

図４に示すように、ウエハ支持部材１０の外周部１３には、内方に延びる爪部１４が設けられている。爪部１４は外周部１３の内縁に沿って間隔をおいて複数（図４では１２個）設けられている。爪部１４はウエハＷの下面周縁部に接して、ウエハＷを水平に支持する。爪部１４に支持されるウエハＷの上面と、外周部１３の上面とは略同一平面上に位置している。 As shown in FIG. 4, a claw portion 14 extending inward is provided on the outer peripheral portion 13 of the wafer support member 10. A plurality (12 in FIG. 4) of claw portions 14 are provided at intervals along the inner edge of the outer peripheral portion 13. The claw portion 14 is in contact with the peripheral edge of the lower surface of the wafer W and supports the wafer W horizontally. The upper surface of the wafer W supported by the claw portion 14 and the upper surface of the outer peripheral portion 13 are located on substantially the same plane.

図３に示すように、ウエハ支持部材１０の外周部１３の側部からは、気流を案内するガイド部１５が外側斜め下方に伸びている。ガイド部１５は略円環形状を有し、ガイド部１５には、切り欠き１６が間隔をおいて複数（図４では６個）設けられている。切り欠き１６に後述するカバー２０の連結ピン２６が挿入されると、カバー２０とウエハ支持部材１０が一体的に回転可能となる。 As shown in FIG. 3, a guide portion 15 that guides the airflow extends obliquely downward and outward from the side portion of the outer peripheral portion 13 of the wafer support member 10. The guide part 15 has a substantially annular shape, and the guide part 15 is provided with a plurality of notches 16 at intervals (six in FIG. 4). When a connecting pin 26 of the cover 20 described later is inserted into the notch 16, the cover 20 and the wafer support member 10 can be rotated integrally.

カバー２０は、図２に示すように、ウエハ支持部材１０に一体的に回転可能に連結され、ウエハ支持部材１０の上方を覆い、ウエハ支持部材１０と共にウエハＷを液処理するための処理室Ｓを形成する。処理室Ｓは略密閉されるので、液処理を安定して行うことができる。また、処理室Ｓの壁面を構成するウエハ支持部材１０およびカバー２０が、ウエハＷと一体的に回転するので、ウエハＷから飛散した処理液が、処理室Ｓの壁面で跳ね返り難い。 As shown in FIG. 2, the cover 20 is connected to the wafer support member 10 so as to be integrally rotatable, covers the upper portion of the wafer support member 10, and a processing chamber S for liquid processing the wafer W together with the wafer support member 10. Form. Since the processing chamber S is substantially sealed, the liquid processing can be performed stably. In addition, since the wafer support member 10 and the cover 20 constituting the wall surface of the processing chamber S rotate integrally with the wafer W, the processing liquid scattered from the wafer W is unlikely to bounce off the wall surface of the processing chamber S.

カバー２０は、処理室Ｓ内に気体を流入させる開口部２４を有する環形状のプレート部２１と、開口部２４の外周部（プレート部２１の内周部）から上方に延びる筒形状のダクト部２２と、プレート部２１の外縁から下方に延びる筒形状の外周部２３とを有している。外周部２３には、複数の切り欠き１６に挿抜可能な複数の連結ピン２６が固定されている。連結ピン２６は、切り欠き１６に対応する位置で、後述のガイド部２５に取り付けられている。 The cover 20 has an annular plate portion 21 having an opening 24 through which gas flows into the processing chamber S, and a cylindrical duct portion extending upward from the outer peripheral portion of the opening 24 (the inner peripheral portion of the plate portion 21). 22 and a cylindrical outer peripheral portion 23 extending downward from the outer edge of the plate portion 21. A plurality of connecting pins 26 that can be inserted into and removed from the plurality of notches 16 are fixed to the outer peripheral portion 23. The connecting pin 26 is attached to a guide portion 25 described later at a position corresponding to the notch 16.

カバー２０のダクト部２２は円筒形状を有し、ダクト部２２の上方には、ファンフィルターユニット（ＦＦＵ）などの気体供給機構Ｆが設けられている。気体供給機構Ｆによって液処理装置１に供給される気体の流量は一定であって、排気機構Ｅによって液処理装置１から排出される気体の流量と略同じである。本実施形態では、このように、液処理装置１に対する気体の流出入量を一定としたうえで、処理室Ｓ内で液処理されるウエハＷの上方における気流の状態（流量、流速などを含む）を最適化する。 The duct portion 22 of the cover 20 has a cylindrical shape, and a gas supply mechanism F such as a fan filter unit (FFU) is provided above the duct portion 22. The flow rate of the gas supplied to the liquid processing apparatus 1 by the gas supply mechanism F is constant, and is substantially the same as the flow rate of the gas discharged from the liquid processing apparatus 1 by the exhaust mechanism E. In the present embodiment, in this way, the amount of gas flowing into and out of the liquid processing apparatus 1 is made constant, and the state of the airflow (including the flow rate and flow velocity) above the wafer W to be liquid processed in the processing chamber S is included. ).

気体供給機構Ｆにおいて不純物を除去した気体は、ダクト部２２内においてダウンフローとなり、水平に配置されるプレート部２１の開口部２４から処理室Ｓに流入し、図３に示すように、ウエハＷの上方を通り、後述の環状間隙ＧＰを介して、処理室Ｓから外部に流出する。処理室Ｓへ流入する気体の流量は、主に、環状間隙ＧＰを介して、処理室Ｓから流出する気体の流量などで決まり、環状間隙ＧＰの大きさなどで決まる。 The gas from which impurities have been removed in the gas supply mechanism F becomes a downflow in the duct portion 22 and flows into the processing chamber S from the opening portion 24 of the plate portion 21 that is disposed horizontally. As shown in FIG. And flows out of the processing chamber S through an annular gap GP described later. The flow rate of the gas flowing into the processing chamber S is mainly determined by the flow rate of the gas flowing out of the processing chamber S through the annular gap GP, and is determined by the size of the annular gap GP.

カバー２０の外周部２３は、例えば筒形状に形成されており、ウエハＷの外径よりも僅かに大きい内径を有する。外周部２３は、ウエハ支持部材１０の外周部１３との間に、環状間隙ＧＰを形成する。環状間隙ＧＰは、ウエハ支持部材１０に支持されるウエハＷの外周に沿う形状を有している。 The outer peripheral portion 23 of the cover 20 is formed in a cylindrical shape, for example, and has an inner diameter slightly larger than the outer diameter of the wafer W. An annular gap GP is formed between the outer peripheral portion 23 and the outer peripheral portion 13 of the wafer support member 10. The annular gap GP has a shape along the outer periphery of the wafer W supported by the wafer support member 10.

図３に示すように、カバー２０の外周部２３の側部からは、気流を案内するガイド部２５が外側斜め下方に延びている。ガイド部２５と、ウエハ支持部材１０のガイド部１５とにより、環状間隙ＧＰを通る気流が外側斜め下方に案内される。 As shown in FIG. 3, a guide portion 25 that guides the airflow extends obliquely downward and outward from the side portion of the outer peripheral portion 23 of the cover 20. By the guide portion 25 and the guide portion 15 of the wafer support member 10, the airflow passing through the annular gap GP is guided obliquely outward and downward.

図２に示すように、カバー２０は、カバー支持部材１２１を介して、カバー昇降機構１２２に接続されており、カバー昇降機構１２２によって上下に移動可能である。カバー２０は、液処理装置１にウエハＷが搬入されるとき、カバー昇降機構１２２によって待機位置まで上昇され、連結ピン２６が切り欠き１６から抜け出る。ウエハ支持部材１０によりウエハＷが支持されると、カバー昇降機構１２２によってカバー２０が下降し、連結ピン２６が切り欠き１６に挿入され、ウエハ支持部材１０とカバー２０が一体的に回転可能に連結される。 As shown in FIG. 2, the cover 20 is connected to a cover lifting mechanism 122 via a cover support member 121 and can be moved up and down by the cover lifting mechanism 122. When the wafer W is loaded into the liquid processing apparatus 1, the cover 20 is raised to the standby position by the cover lifting mechanism 122, and the connecting pin 26 comes out of the notch 16. When the wafer W is supported by the wafer support member 10, the cover 20 is lowered by the cover elevating mechanism 122, the connecting pin 26 is inserted into the notch 16, and the wafer support member 10 and the cover 20 are integrally connected to be rotatable. Is done.

カバー昇降機構１２２は、カバー２０とウエハ支持部材１０とが一体的に回転可能に連結され処理室Ｓを形成した状態で、環状間隙ＧＰを調節する役割を果たす。カバー昇降機構１２２がカバー２０を上方に移動させると、カバー２０がウエハ支持部材１０に対して離間し、環状間隙ＧＰが広がる。一方、カバー昇降機構１２２がカバー２０を下方に移動させると、カバー２０がウエハ支持部材１０に対して接近し、環状間隙ＧＰが狭くなる。環状間隙ＧＰを調節することで、環状間隙ＧＰを介して、処理室Ｓから外部へ流出する気流の状態（流速、流量などを含む）を調節することができる。 The cover lifting mechanism 122 plays a role of adjusting the annular gap GP in a state where the cover 20 and the wafer support member 10 are integrally connected so as to be rotatable and the processing chamber S is formed. When the cover lifting mechanism 122 moves the cover 20 upward, the cover 20 is separated from the wafer support member 10 and the annular gap GP is widened. On the other hand, when the cover lifting mechanism 122 moves the cover 20 downward, the cover 20 approaches the wafer support member 10 and the annular gap GP becomes narrow. By adjusting the annular gap GP, it is possible to adjust the state (including the flow velocity, the flow rate, and the like) of the airflow flowing out from the processing chamber S through the annular gap GP.

モータＭは、ウエハ支持部材１０の回転軸部１２を回転可能に保持している。モータＭが作動すると、ウエハ支持部材１０、ウエハ支持部材１０に支持されるウエハＷ、およびウエハ支持部材１０に連結されるカバー２０が一体的に回転する。 The motor M rotatably holds the rotating shaft portion 12 of the wafer support member 10. When the motor M is operated, the wafer support member 10, the wafer W supported by the wafer support member 10, and the cover 20 connected to the wafer support member 10 are integrally rotated.

液供給部材３０は、処理室Ｓ内において、ウエハ支持部１０により支持されるウエハＷの上方に配置され、ウエハＷに上方から処理液を供給する。液供給部材３０は、図３に示すように、円形状の開口部２４の直径よりも大きい直径の円板形状の本体部３１を有している。本体部３１は、ダクト部２２（開口部２４）に対し対向配置され、開口部２４から処理室Ｓに流入する気流がウエハＷ上に形成される処理液の液膜を乱さないように、気流の向きを変える役割を果たす。 In the processing chamber S, the liquid supply member 30 is disposed above the wafer W supported by the wafer support 10 and supplies the processing liquid to the wafer W from above. As shown in FIG. 3, the liquid supply member 30 includes a disk-shaped main body 31 having a diameter larger than the diameter of the circular opening 24. The main body 31 is disposed to face the duct portion 22 (opening 24), and the airflow flowing into the processing chamber S from the opening 24 does not disturb the liquid film of the processing liquid formed on the wafer W. The role of changing the direction.

液供給部材３０は、図２に示すように、バルブＶ１、Ｖ２が途中に設けられる配管Ｐ１を介し、液供給源Ｓ１、Ｓ２と接続されている。液供給源Ｓ１は薬液を供給するものであり、液供給源Ｓ２は薬液を洗い流すリンス液を供給するものである。薬液と、リンス液とは、切り替え可能に、ノズル３２（図３参照）からウエハＷに向けて供給される。 As shown in FIG. 2, the liquid supply member 30 is connected to liquid supply sources S1 and S2 via a pipe P1 in which valves V1 and V2 are provided in the middle. The liquid supply source S1 supplies a chemical solution, and the liquid supply source S2 supplies a rinse solution for washing away the chemical solution. The chemical liquid and the rinsing liquid are supplied from the nozzle 32 (see FIG. 3) toward the wafer W in a switchable manner.

ウエハＷの洗浄処理においては、薬液として、例えばＳＰＭ（Ｈ_２ＳＯ_４＋Ｈ_２Ｏ_２）、ＳＣ１（ＮＨ_４ＯＨ＋Ｈ_２Ｏ_２＋Ｈ_２Ｏ）、ＳＣ２（ＨＣｌ＋Ｈ_２Ｏ_２＋Ｈ_２Ｏ）、またはＤＨＦ（希フッ酸）などが用いられる。複数種類の薬液が用いられてもよく、複数の液供給源Ｓ１が設けられてもよい。リンス液としては、例えば脱イオン水（ＤＩＷ）などが用いられる。 In the cleaning process of the wafer W, for example, SPM (H ₂ SO ₄ + H ₂ O ₂ ), SC1 (NH ₄ OH + H ₂ O ₂ + H ₂ O), SC2 (HCl + H ₂ O ₂ + H ₂ O), or DHF is used as a chemical solution. (Diluted hydrofluoric acid) or the like is used. A plurality of types of chemical solutions may be used, and a plurality of liquid supply sources S1 may be provided. For example, deionized water (DIW) is used as the rinse liquid.

エッチング処理においては、フッ酸（ＨＦ）、バッファードフッ酸（ＢＨＦ）、または硝酸（ＨＮＯ_３）などを処理液として使用しても良い。 In the etching treatment, hydrofluoric acid (HF), buffered hydrofluoric acid (BHF), nitric acid (HNO ₃ ), or the like may be used as a treatment liquid.

なお、現像処理においては、薬液として、現像液が用いられる。 In the developing process, a developing solution is used as the chemical solution.

ノズル３２は、本体部３１から下方に突出していてもよいし、本体部３１の内部に埋設されていてもよい。ノズル３２は、ウエハ支持部材１０により支持されるウエハＷに向けて開口しており、ウエハＷの上面に薬液またはリンス液を供給する。ノズル３２は、ウエハＷの径方向に沿って間隔をおいて複数設置される（図３には、２つのみ図示）。ノズル３２の設置数は１つでもよい。 The nozzle 32 may protrude downward from the main body 31 or may be embedded in the main body 31. The nozzle 32 opens toward the wafer W supported by the wafer support member 10 and supplies a chemical solution or a rinse solution to the upper surface of the wafer W. A plurality of nozzles 32 are provided at intervals along the radial direction of the wafer W (only two are shown in FIG. 3). The number of nozzles 32 may be one.

ノズル３２の設置数に関係なく、１つのノズル３２は、ウエハＷの中央部に向けて開口しており、ウエハＷの中央部に薬液またはリンス液を供給する。ウエハＷの中央部に供給された処理液は外側に広がり液膜を形成する。 Regardless of the number of nozzles 32, one nozzle 32 opens toward the center of the wafer W, and supplies a chemical solution or a rinse solution to the center of the wafer W. The processing liquid supplied to the central portion of the wafer W spreads outward and forms a liquid film.

液供給源Ｓ１と、液供給部材３０とを接続する配管Ｐ１の出口付近には、薬液の処理能力を高めるため、薬液を所定の温度に加熱する加熱装置Ｈが設けられている。加熱装置Ｈは、液供給源Ｓ１に設置されてもよい。 In the vicinity of the outlet of the pipe P1 connecting the liquid supply source S1 and the liquid supply member 30, a heating device H that heats the chemical liquid to a predetermined temperature is provided in order to increase the treatment capacity of the chemical liquid. The heating device H may be installed in the liquid supply source S1.

また、液供給部材３０は、バルブＶ３が途中に設けられる配管Ｐ３を介し、液供給源Ｓ３と接続されている。液供給源Ｓ３は、リンス液の乾燥溶媒として、例えばイソプロピルアルコール（ＩＰＡ）などのアルコールを液供給部材３０に供給する。乾燥溶媒は、液供給部材３０のノズル３３（図３参照）からウエハＷに向けて供給される。 The liquid supply member 30 is connected to a liquid supply source S3 via a pipe P3 provided with a valve V3 on the way. The liquid supply source S3 supplies alcohol such as isopropyl alcohol (IPA) to the liquid supply member 30 as a dry solvent for the rinse liquid. The dry solvent is supplied toward the wafer W from the nozzle 33 (see FIG. 3) of the liquid supply member 30.

ノズル３３は、本体部３１から下方に突出していてもよいし、本体部３１の内部に埋設されていてもよい。ノズル３３は、ウエハ支持部材１０により支持されるウエハＷに向けて開口しており、ウエハＷの上面に乾燥溶媒を供給する。ノズル３３は、ウエハＷの径方向に沿って間隔をおいて複数設置されている（図３には、２つのみ図示）。ノズル３３の設置数は１つでもよい。 The nozzle 33 may protrude downward from the main body 31 or may be embedded in the main body 31. The nozzle 33 opens toward the wafer W supported by the wafer support member 10 and supplies a dry solvent to the upper surface of the wafer W. A plurality of nozzles 33 are provided at intervals along the radial direction of the wafer W (only two are shown in FIG. 3). The number of nozzles 33 may be one.

ノズル３３の設置数に関係なく、１つのノズル３３は、ウエハＷの中央部に向けて開口しており、ウエハＷの中央部に乾燥溶媒を供給する。ウエハＷの中央部に供給された処理液は外側に広がり液膜を形成する。 Regardless of the number of nozzles 33, one nozzle 33 is open toward the center of the wafer W and supplies a dry solvent to the center of the wafer W. The processing liquid supplied to the central portion of the wafer W spreads outward and forms a liquid film.

液供給部材３０は、支持部材１３１を介して、液供給部材昇降機構１３２に接続されており、液供給部材昇降機構１３２によって上下に移動可能である。液供給部材３０は、液処理装置１にウエハＷが搬入、搬出されるとき、液供給部材昇降機構１３２によって待機位置まで上昇され、ウエハ支持部材１０によりウエハＷが支持された後、液供給部材昇降機構１３２によって下降し、ウエハＷに処理液を供給する位置で停止する。 The liquid supply member 30 is connected to the liquid supply member elevating mechanism 132 via the support member 131, and can be moved up and down by the liquid supply member elevating mechanism 132. The liquid supply member 30 is raised to the standby position by the liquid supply member lifting mechanism 132 when the wafer W is carried into and out of the liquid processing apparatus 1, and the liquid supply member 30 is supported after the wafer W is supported by the wafer support member 10. It descends by the elevating mechanism 132 and stops at a position where the processing liquid is supplied to the wafer W.

液供給部材昇降機構１３２は、ウエハ支持部材１０とカバー２０とが処理室Ｓを形成した状態で、液供給部材３０を上昇または下降させて、カバー２０のプレート部２１に対し接近または離間させる。よって、プレート部２１の開口部２４から処理室Ｓに流入する気流の状態（流量、流速、向き）を調節することができる。 The liquid supply member elevating mechanism 132 raises or lowers the liquid supply member 30 in a state where the wafer support member 10 and the cover 20 form the processing chamber S so as to approach or separate from the plate portion 21 of the cover 20. Therefore, the state (flow rate, flow velocity, direction) of the airflow flowing into the processing chamber S from the opening 24 of the plate portion 21 can be adjusted.

液供給部材３０からウエハＷに供給された処理液は、遠心力でウエハＷの外方に振り切られ、環状間隙ＧＰを通る気流と共にカップ４０へ回収される。なお、ウエハ支持部材１０のプレート部１１に落下した処理液は、ウエハ支持部材１０の外周部１３に形成された流出口１７（図３参照）から遠心力で流出し、カップ４０へ回収される。 The processing liquid supplied to the wafer W from the liquid supply member 30 is spun off to the outside of the wafer W by centrifugal force, and is collected in the cup 40 together with the airflow passing through the annular gap GP. The processing liquid dropped on the plate portion 11 of the wafer support member 10 flows out from the outlet 17 (see FIG. 3) formed on the outer peripheral portion 13 of the wafer support member 10 by centrifugal force and is collected in the cup 40. .

カップ４０は、円環形状のプレート部４１と、プレート部４１の内縁から上方に延びる円筒形状の内壁部４２と、プレート部４１の外縁から上方に延びる円筒形状の外壁部４３とを有している。外壁部４３は環状間隙ＧＰを取り囲んでおり、外壁部４３の上端部からは円環形状の庇部４４が内側斜め上方に延びている。 The cup 40 includes an annular plate portion 41, a cylindrical inner wall portion 42 extending upward from the inner edge of the plate portion 41, and a cylindrical outer wall portion 43 extending upward from the outer edge of the plate portion 41. Yes. The outer wall 43 surrounds the annular gap GP, and an annular flange 44 extends diagonally upward from the upper end of the outer wall 43.

カップ４０は、処理液を気流の流れから分離するため、カップ４０内の下部空間を外側環状空間４５と内側環状空間４６とに区画する円筒形状の仕切り部４７を有している。外側環状空間４５には、処理液を外部に排出する排液管４８が接続されている。内側環状空間４６には、排気管４９を介して、排気機構Ｅが接続されている。 The cup 40 has a cylindrical partition 47 that partitions the lower space in the cup 40 into an outer annular space 45 and an inner annular space 46 in order to separate the processing liquid from the airflow. A drainage pipe 48 for discharging the processing liquid to the outside is connected to the outer annular space 45. An exhaust mechanism E is connected to the inner annular space 46 via an exhaust pipe 49.

排気機構Ｅは、真空ポンプなどで構成され、カップ４０内を排気することで、環状間隙ＧＰを介して、処理室Ｓ内のウエハＷの上方空間から、カップ４０の外壁部４３へ向かう気流を形成する。この気流は、回転するウエハＷから振り切られる処理液をカップ４０内へ回収する役割を果たす。 The exhaust mechanism E is configured by a vacuum pump or the like, and exhausts the interior of the cup 40 to generate an air flow from the upper space of the wafer W in the processing chamber S toward the outer wall 43 of the cup 40 through the annular gap GP. Form. This air current plays a role of collecting the processing liquid spun off from the rotating wafer W into the cup 40.

液処理装置１の所定の装置（例えば、モータＭ、バルブＶ１〜Ｖ３、カバー昇降機構１２２、液供給部材昇降機構１３２）は、図２に示すように、液処理装置１の動作を制御する制御部６０に、信号ラインを介して接続されている。制御部６０は、ＣＰＵ、記録媒体などを含むコンピュータとして構成されている。制御部６０は、記録媒体に格納された各種プログラムをＣＰＵに実行させることで、信号ラインを介して接続される装置を制御し、後述の液処理装置１の各種動作を実行させる。 A predetermined device (for example, motor M, valves V1 to V3, cover elevating mechanism 122, liquid supply member elevating mechanism 132) of the liquid processing apparatus 1 controls the operation of the liquid processing apparatus 1 as shown in FIG. The unit 60 is connected via a signal line. The control unit 60 is configured as a computer including a CPU, a recording medium, and the like. The control unit 60 causes the CPU to execute various programs stored in the recording medium, thereby controlling devices connected via the signal lines and causing various operations of the liquid processing apparatus 1 described later to be performed.

次に、上記構成の液処理装置の動作（液処理方法）について説明する。 Next, the operation (liquid processing method) of the liquid processing apparatus having the above configuration will be described.

先ず、カバー昇降機構１２２がカバー２０を待機位置まで上昇させると共に、液供給部材昇降機構１３２が液供給部材３０を待機位置まで上昇させると、図１に示す搬送機構１０６の保持アーム１０７により保持されたウエハＷが液処理装置１に搬入される。ウエハＷがウエハ支持部材１０に受け渡され、保持アーム１０７が液処理装置１から退出すると、液供給部材昇降機構１３２によって液供給部材３０がウエハＷの上面近傍の位置まで下降される。また、カバー昇降機構１２２によってカバー２０が下降し、カバー２０の連結ピン２６がウエハ支持部材１０の切り欠き１６に挿入され、カバー２０とウエハ支持部材１０が一体的に回転可能に連結される。カバー２０は、ウエハ支持部材１０の上方を覆い、ウエハ支持部材１０と共にウエハＷを液処理するための処理室Ｓを形成する。続いて、モータＭがウエハ支持部材１０、カバー２０およびウエハＷを一体的に回転させる。 First, when the cover elevating mechanism 122 raises the cover 20 to the standby position and the liquid supply member elevating mechanism 132 raises the liquid supply member 30 to the standby position, it is held by the holding arm 107 of the transport mechanism 106 shown in FIG. The wafer W is loaded into the liquid processing apparatus 1. When the wafer W is transferred to the wafer support member 10 and the holding arm 107 is withdrawn from the liquid processing apparatus 1, the liquid supply member 30 is lowered to a position near the upper surface of the wafer W by the liquid supply member elevating mechanism 132. Further, the cover 20 is lowered by the cover elevating mechanism 122, the connecting pin 26 of the cover 20 is inserted into the notch 16 of the wafer support member 10, and the cover 20 and the wafer support member 10 are integrally connected to be rotatable. The cover 20 covers the upper portion of the wafer support member 10 and forms a processing chamber S for liquid processing the wafer W together with the wafer support member 10. Subsequently, the motor M rotates the wafer support member 10, the cover 20, and the wafer W integrally.

次いで、回転するウエハＷの上面に液供給部材３０から処理液が供給される。具体的には、例えば、液供給部材３０のノズル３２から薬液（例えば、ＳＰＭ）がウエハＷに所定時間供給される。続いて、薬液を洗い流すリンス液が、液供給部材３０のノズル３２からウエハＷに所定時間供給される。次いで、液供給部材３０のノズル３３から乾燥溶媒（例えば、ＩＰＡ）がウエハＷの上面に向けて所定時間吐出される。乾燥溶媒の供給が停止された後、ウエハＷが高速回転され、遠心力でリンス液が振り切られ、ウエハＷの回転が停止される。 Next, the processing liquid is supplied from the liquid supply member 30 to the upper surface of the rotating wafer W. Specifically, for example, a chemical (for example, SPM) is supplied to the wafer W from the nozzle 32 of the liquid supply member 30 for a predetermined time. Subsequently, a rinse solution for washing away the chemical solution is supplied to the wafer W from the nozzle 32 of the solution supply member 30 for a predetermined time. Next, a dry solvent (for example, IPA) is discharged from the nozzle 33 of the liquid supply member 30 toward the upper surface of the wafer W for a predetermined time. After the supply of the dry solvent is stopped, the wafer W is rotated at a high speed, the rinse liquid is shaken off by a centrifugal force, and the rotation of the wafer W is stopped.

ここで、回転するウエハＷから振り切られた処理液は、ウエハ支持部材１０の外周部１３と、カバー２０の外周部２３との間に形成される環状間隙ＧＰを介して、カップ４０内に回収される。排気機構Ｅは、カップ４０内を排気することにより、環状間隙ＧＰを介して、処理室Ｓ内のウエハＷの上方空間からカップ４０へ向かう気流を形成する。この気流は、回転するウエハＷから振り切られる処理液をカップ４０へ回収する役割を果たす。 Here, the processing liquid shaken off from the rotating wafer W is collected in the cup 40 through an annular gap GP formed between the outer peripheral portion 13 of the wafer support member 10 and the outer peripheral portion 23 of the cover 20. Is done. The exhaust mechanism E exhausts the inside of the cup 40 to form an air flow from the space above the wafer W in the processing chamber S toward the cup 40 through the annular gap GP. This air current plays a role of collecting the processing liquid spun off from the rotating wafer W into the cup 40.

最後に、ウエハＷを液処理装置１に搬入したときと、逆の手順で、ウエハＷが液処理装置１から搬出され、ウエハＷの液処理が終了する。 Finally, the wafer W is unloaded from the liquid processing apparatus 1 in the reverse procedure to when the wafer W is loaded into the liquid processing apparatus 1, and the liquid processing of the wafer W is completed.

本実施形態では、ウエハ支持部材１０およびカバー２０がウエハＷを液処理するための処理室Ｓを形成する。処理室Ｓは略密閉されているので、液処理を安定して行うことができる。また、処理室Ｓの壁面を構成するウエハ支持部材１０およびカバー２０が、ウエハＷと一体的に回転するので、ウエハＷから飛散した処理液が、処理室Ｓの壁面で跳ね返り難い。 In the present embodiment, the wafer support member 10 and the cover 20 form a processing chamber S for liquid processing the wafer W. Since the processing chamber S is substantially sealed, the liquid processing can be performed stably. In addition, since the wafer support member 10 and the cover 20 constituting the wall surface of the processing chamber S rotate integrally with the wafer W, the processing liquid scattered from the wafer W is unlikely to bounce off the wall surface of the processing chamber S.

また、本実施形態では、ウエハＷの液処理の工程に応じて、環状間隙ＧＰを調節する。よって、環状間隙ＧＰを介して、処理室Ｓから外部へ流出する気流の状態を最適化することができる。排気機構Ｅの排気量が一定の場合、環状間隙ＧＰが広がるほど、環状間隙ＧＰを通る気流の流量が増える。環状間隙ＧＰの調節は、例えばカバー昇降機構１２２によるカバー２０の上昇または下降で実現される。 In the present embodiment, the annular gap GP is adjusted according to the liquid processing step for the wafer W. Therefore, the state of the airflow flowing out from the processing chamber S to the outside through the annular gap GP can be optimized. When the exhaust amount of the exhaust mechanism E is constant, the flow rate of the airflow passing through the annular gap GP increases as the annular gap GP increases. The adjustment of the annular gap GP is realized, for example, by raising or lowering the cover 20 by the cover lifting mechanism 122.

なお、本実施形態では、環状間隙ＧＰの調節は、カバー２０の上昇または下降により実現されるが、ウエハ支持部材１０の下降または上昇により実現されてもよく、カバー２０とウエハ支持部材１０の両方の移動により実現されてもよい。 In this embodiment, the adjustment of the annular gap GP is realized by raising or lowering the cover 20, but may be realized by lowering or raising the wafer support member 10, and both the cover 20 and the wafer support member 10 may be adjusted. It may be realized by movement of.

さらに、本実施形態では、ウエハＷの液処理の工程に応じて、液供給部材３０と、カバー２０とを接近または離間させ、液供給部材３０の本体部３１と、カバー２０のプレート部２１との間に形成される隙間ＯＧ（図２参照）を調節する。よって、プレート部２１の開口部２４から処理室Ｓへ流入する気流の状態を最適化することができる。処理室Ｓに流入する気流の流量が一定の場合（即ち、処理室Ｓから流出する気流の流量が一定の場合）、開口部２４と液供給部材３０とが接近するほど、即ち、隙間ＯＧが狭くなるほど、気流が絞られるので、気流の流速が速くなる。開口部２４と液供給部材３０との接近または離間は、例えば液供給部材昇降機構１３２による液供給部材３０の上昇または下降により実現される。 Further, in the present embodiment, the liquid supply member 30 and the cover 20 are moved closer to or away from each other according to the liquid processing step of the wafer W, and the main body portion 31 of the liquid supply member 30 and the plate portion 21 of the cover 20 The gap OG (see FIG. 2) formed between the two is adjusted. Therefore, the state of the airflow flowing into the processing chamber S from the opening 24 of the plate portion 21 can be optimized. When the flow rate of the airflow flowing into the processing chamber S is constant (that is, when the flow rate of the airflow flowing out from the processing chamber S is constant), the closer the opening 24 and the liquid supply member 30 are, that is, the gap OG is. The narrower the airflow, the higher the airflow velocity. The approach or separation between the opening 24 and the liquid supply member 30 is realized, for example, by raising or lowering the liquid supply member 30 by the liquid supply member lifting mechanism 132.

次いで、隙間ＯＧ、環状間隙ＧＰの調節例について説明する。ここでは、回転するウエハＷに対し、薬液、リンス液、乾燥溶媒をこの順で供給し、その後、乾燥溶媒を振り切るため、ウエハＷを高速回転させる場合について説明する。 Next, an example of adjusting the gap OG and the annular gap GP will be described. Here, a case will be described in which a chemical solution, a rinse solution, and a dry solvent are supplied in this order to the rotating wafer W, and then the wafer W is rotated at a high speed in order to shake off the dry solvent.

先ず、薬液であるＳＰＭの供給工程では、ＳＰＭは他の薬液よりも高温で使用されるので、回転するウエハＷの上方にヒュームが発生しやすい。そこで、発生したヒュームが開口部２４から上方に逆流するのを防止するため、隙間ＯＧが基準よりも狭く設定される。 First, in the process of supplying SPM, which is a chemical solution, since SPM is used at a higher temperature than other chemical solutions, fumes are likely to be generated above the rotating wafer W. Therefore, in order to prevent the generated fumes from flowing back upward from the opening 24, the gap OG is set narrower than the reference.

また、ＳＰＭの供給工程では、回転するウエハＷの近傍で発生する旋回気流によって、ＳＰＭが冷却されないように、ウエハＷを低速回転させる。この状態で、環状間隙ＧＰから外部にヒュームを効率的に排出するため、環状間隙ＧＰは基準よりも狭く設定される。環状間隙ＧＰが狭くなると、環状間隙ＧＰを通る気流の流速が速くなるので、環状間隙ＧＰを介して処理室Ｓから外部に向かう気流の流れが安定化するからである。 In the SPM supply process, the wafer W is rotated at a low speed so that the SPM is not cooled by the swirling airflow generated in the vicinity of the rotating wafer W. In this state, the annular gap GP is set to be narrower than the reference in order to efficiently discharge fumes from the annular gap GP to the outside. This is because when the annular gap GP is narrowed, the flow velocity of the airflow passing through the annular gap GP is increased, and the flow of the airflow from the processing chamber S to the outside through the annular gap GP is stabilized.

続く、リンス液の供給工程では、処理室Ｓ内の雰囲気を、薬液を含む雰囲気から、清浄な雰囲気に速やかに置換するため、隙間ＯＧおよび環状間隙ＧＰは基準のサイズに戻される。 In the subsequent rinsing liquid supply step, the gap OG and the annular gap GP are returned to the standard size in order to quickly replace the atmosphere in the processing chamber S with the clean atmosphere from the atmosphere containing the chemical liquid.

続く、乾燥溶媒であるＩＰＡの供給工程では、ＩＰＡによるリンス液の置換効率を向上するため、処理室Ｓ内のＩＰＡ濃度を高めることが重要になる。そこで、隙間ＯＧおよび環状間隙ＧＰは、それぞれ、ＳＰＭの供給時よりもさらに狭く設定される。 In the subsequent step of supplying IPA, which is a dry solvent, it is important to increase the IPA concentration in the processing chamber S in order to improve the efficiency of rinsing liquid replacement with IPA. Therefore, the gap OG and the annular gap GP are set to be narrower than when the SPM is supplied.

最後に、ウエハＷを高速回転させ、乾燥させる工程では、処理室Ｓ内の雰囲気を速やかに置換するため、隙間ＯＧおよび環状間隙ＧＰは、それぞれ、基準のサイズに戻される。 Finally, in the step of rotating the wafer W at a high speed and drying, the gap OG and the annular gap GP are returned to the standard size in order to quickly replace the atmosphere in the processing chamber S.

なお、薬液であるＤＨＦの供給工程では、ＤＨＦによってウエハＷの酸化膜が除去されウエハＷが疎水化する。そのため、良好な液膜が形成されるように、ウエハＷを高速回転させる必要があり、ウエハＷ近傍で発生する旋回気流が速くなる。高速の旋回気流を環状間隙ＧＰから外部に排出させるため、環状間隙ＧＰは基準の大きさに設定される。また、ＤＨＦの供給工程では、薬液が開口部２４から上方に逆流しないように、隙間ＯＧは基準よりも狭く設定される。 In the process of supplying DHF, which is a chemical solution, the oxide film on the wafer W is removed by DHF, and the wafer W becomes hydrophobic. Therefore, it is necessary to rotate the wafer W at a high speed so that a good liquid film is formed, and the swirling airflow generated in the vicinity of the wafer W becomes faster. In order to discharge the high-speed swirling air flow from the annular gap GP to the outside, the annular gap GP is set to a reference size. Further, in the DHF supply process, the gap OG is set narrower than the reference so that the chemical solution does not flow backward from the opening 24.

このように、本実施形態によれば、ウエハＷの処理液の工程に応じて、環状間隙ＧＰおよび／または隙間ＯＧを調節する。よって、処理室Ｓに流出入する気流の状態を最適化することができ、ウエハＷの上方における気流の状態を最適化することができる。 Thus, according to the present embodiment, the annular gap GP and / or the gap OG is adjusted according to the process of the processing liquid of the wafer W. Therefore, the state of the airflow flowing into and out of the processing chamber S can be optimized, and the state of the airflow above the wafer W can be optimized.

なお、環状間隙ＧＰ、隙間ＯＧの調節は、ウエハＷの回転中に実施されてもよいし、回転前に実施されてもよい。 The adjustment of the annular gap GP and the gap OG may be performed during the rotation of the wafer W or may be performed before the rotation.

［第１変形例］
図５は、第１変形例による液処理装置の要部を示す断面図である。 [First Modification]
FIG. 5 is a cross-sectional view showing a main part of a liquid processing apparatus according to a first modification.

液処理装置１Ａは、図５に示すように、環状間隙ＧＰを上下に区画する環状の仕切り壁７１Ａを有する。仕切り壁７１Ａの外周部からは、気流を案内するガイド部７３Ａが処理室Ｓに対して外側斜め下方に延びている。 As shown in FIG. 5, the liquid processing apparatus 1 A includes an annular partition wall 71 A that partitions the annular gap GP in the vertical direction. From the outer peripheral portion of the partition wall 71A, a guide portion 73A for guiding the airflow extends obliquely downward and outward with respect to the processing chamber S.

また、液処理装置１Ａは、仕切り壁７１Ａとウエハ支持部材１０の外周部１３とを連結する連結部材７２Ａを有する。連結部材７２Ａは、環状間隙ＧＰの周方向に間隔をおいて複数設けられている。 Further, the liquid processing apparatus 1 A includes a connecting member 72 A that connects the partition wall 71 A and the outer peripheral portion 13 of the wafer support member 10. A plurality of connecting members 72A are provided at intervals in the circumferential direction of the annular gap GP.

ウエハ支持部材１０の外周部１３と、仕切り壁７１Ａとの間には、処理室Ｓを外部と連通する間隙Ｇ１が形成されている。間隙Ｇ１を通る気流は、仕切り壁７１Ａのガイド部７３Ａと、ウエハ支持部材１０のガイド部１５とにより、処理室Ｓに対して外側斜め下方に案内される。 A gap G1 that communicates the processing chamber S with the outside is formed between the outer peripheral portion 13 of the wafer support member 10 and the partition wall 71A. The airflow passing through the gap G1 is guided outward and obliquely downward with respect to the processing chamber S by the guide portion 73A of the partition wall 71A and the guide portion 15 of the wafer support member 10.

また、カバー２０の外周部２３と、仕切り壁７１Ａとの間には、処理室Ｓを外部と連通する間隙Ｇ２が形成されている。間隙Ｇ２を通る気流は、仕切り壁７１Ａのガイド部７３Ａと、カバー２０のガイド部２５とにより、外側斜め下方に案内される。 In addition, a gap G2 is formed between the outer peripheral portion 23 of the cover 20 and the partition wall 71A to communicate the processing chamber S with the outside. The airflow passing through the gap G2 is guided outward and obliquely downward by the guide portion 73A of the partition wall 71A and the guide portion 25 of the cover 20.

カバー２０は、図２に示すように、カバー支持部材１２１を介して、カバー昇降機構１２２に接続されている。そのため、カバー昇降機構１２２によるカバー２０の昇降によって、環状間隙ＧＰのうち、上側の間隙Ｇ２を調節することが可能である。よって、環状間隙ＧＰを介して、処理室Ｓ内のウエハＷの上方空間からカップ４０に向かう気流の状態を最適化することができる。 As shown in FIG. 2, the cover 20 is connected to a cover lifting mechanism 122 via a cover support member 121. Therefore, it is possible to adjust the upper gap G2 in the annular gap GP by raising and lowering the cover 20 by the cover raising and lowering mechanism 122. Therefore, the state of the airflow from the upper space of the wafer W in the processing chamber S toward the cup 40 can be optimized via the annular gap GP.

また、本変形例では、環状間隙ＧＰを調節する際に、下側の間隙Ｇ１が変化しないので、環状間隙ＧＰを介して、所定量以上の気体や処理液を処理室Ｓから外に流出させることができる。 Further, in this modification, when the annular gap GP is adjusted, the lower gap G1 does not change, so that a predetermined amount or more of gas or processing liquid flows out of the processing chamber S through the annular gap GP. be able to.

なお、本変形例では、連結部材７２Ａが、仕切り壁７１Ａとウエハ支持部材１０の外周部１３とを連結するとしたが、仕切り壁７１Ａとカバー２０の外周部２３とを連結してもよい。この場合、カバー２０の昇降によって、環状間隙ＧＰのうち、下側の間隙Ｇ１が変化する。 In this modification, the connecting member 72A connects the partition wall 71A and the outer peripheral portion 13 of the wafer support member 10, but the partition wall 71A and the outer peripheral portion 23 of the cover 20 may be connected. In this case, the lower gap G1 of the annular gap GP changes as the cover 20 moves up and down.

［第２変形例］
図６は、第２変形例による液処理装置の環状間隙を拡大して示す断面図である。 [Second Modification]
FIG. 6 is an enlarged cross-sectional view of the annular gap of the liquid processing apparatus according to the second modification.

液処理装置１Ｂは、第１変形例と同様に、環状間隙ＧＰを上下に区画する環状の仕切り壁７１Ｂを有する。仕切り壁７１Ｂの外周部からは、気流を案内するガイド部７３Ｂが処理室Ｓに対して外側斜め下方に延びている。 The liquid processing apparatus 1B includes an annular partition wall 71B that partitions the annular gap GP in the vertical direction as in the first modification. From the outer periphery of the partition wall 71B, a guide portion 73B that guides the airflow extends obliquely outward and downward with respect to the processing chamber S.

また、液処理装置１Ｂは、第１変形例と同様に、仕切り壁７１Ｂとウエハ支持部材１０を連結する連結部材（不図示）を有する。連結部材は、環状間隙ＧＰの周方向に間隔をおいて複数設けられている。 In addition, the liquid processing apparatus 1B includes a connecting member (not shown) that connects the partition wall 71B and the wafer support member 10 as in the first modification. A plurality of connecting members are provided at intervals in the circumferential direction of the annular gap GP.

第２変形例では、仕切り壁７１Ｂと、カバー２０Ｂの外周部２３Ｂとが、間隙Ｇ１を流れる気流を絞るラビリンス構造を形成している。 In the second modification, the partition wall 71B and the outer peripheral portion 23B of the cover 20B form a labyrinth structure that restricts the airflow flowing through the gap G1.

例えば、仕切り壁７１Ｂの上面には、環状突起７４Ｂが形成されており、外周部２３Ｂの下面には、環状溝２７Ｂが形成されている。環状突起７４Ｂの先端部は、環状溝２７Ｂ内に挿入されると共に、環状溝２７Ｂの壁面から離間して、環状溝２７Ｂと共にラビリンス構造を形成する。環状突起７４Ｂおよび環状溝２７Ｂは、それぞれ、同心円状に複数（図６では３つ）設けられている。 For example, an annular protrusion 74B is formed on the upper surface of the partition wall 71B, and an annular groove 27B is formed on the lower surface of the outer peripheral portion 23B. The distal end portion of the annular protrusion 74B is inserted into the annular groove 27B and is separated from the wall surface of the annular groove 27B to form a labyrinth structure together with the annular groove 27B. A plurality (three in FIG. 6) of the annular protrusions 74B and the annular grooves 27B are provided concentrically.

ラビリンス構造は、間隙Ｇ１を流れる気流を絞るので、処理室Ｓから外部へ流出する気流の流出量が少ない液処理の工程、例えば処理室Ｓ内を窒素雰囲気として液処理する工程に有効である。 Since the labyrinth structure restricts the airflow flowing through the gap G1, the labyrinth structure is effective for a liquid processing process in which the amount of airflow flowing out from the processing chamber S to the outside is small, for example, a liquid processing process using the processing chamber S as a nitrogen atmosphere.

なお、本変形例では、仕切り壁７１Ｂと、カバー２０Ｂの外周部２３Ｂとがラビリンス構造を形成しているとしたが、仕切り壁７１Ｂと、ウエハ支持部材１０の外周部１３とがラビリンス構造を形成していてもよい。また、ラビリンス構造を図２などに示す液処理装置１に示す環状間隙に適用してもよく、ウエハ支持部材１０の外周部１３と、カバー２０の外周部２３とがラビリンス構造を形成していてもよい。 In this modification, the partition wall 71B and the outer peripheral portion 23B of the cover 20B form a labyrinth structure. However, the partition wall 71B and the outer peripheral portion 13 of the wafer support member 10 form a labyrinth structure. You may do it. Further, the labyrinth structure may be applied to the annular gap shown in the liquid processing apparatus 1 shown in FIG. 2 and the like, and the outer peripheral portion 13 of the wafer support member 10 and the outer peripheral portion 23 of the cover 20 form a labyrinth structure. Also good.

［第３変形例］
図７は、第３変形例による液処理装置の要部を示す断面図である。図８は、液供給部材３０Ｃを示す上面図である。 [Third Modification]
FIG. 7 is a cross-sectional view showing a main part of a liquid processing apparatus according to a third modification. FIG. 8 is a top view showing the liquid supply member 30C.

液処理装置１Ｃは、図２に示す液処理装置１と、液供給部材の構成が異なる。液供給部材３０Ｃ以外の構成は同様であるので、説明を省略する。 The liquid processing apparatus 1C is different from the liquid processing apparatus 1 shown in FIG. 2 in the configuration of the liquid supply member. Since the configuration other than the liquid supply member 30C is the same, the description thereof is omitted.

液供給部材３０Ｃは、図７および図８に示すように、本体部３１の外周面から延びる２つの延長部３４Ｃ、３５Ｃをさらに有している。延長部３４Ｃ、３５ＣはウエハＷの径方向と平行に延びており、先端がウエハＷの外縁部の上方に位置する。延長部３４Ｃ、３５Ｃには延びる方向に沿って間隔をおいて複数のノズル３２、３３が設けられている。よって、ウエハＷの中心部から外縁部まで均一に処理液を供給することができる。 As shown in FIGS. 7 and 8, the liquid supply member 30 C further includes two extension portions 34 C and 35 C that extend from the outer peripheral surface of the main body portion 31. The extensions 34C and 35C extend in parallel with the radial direction of the wafer W, and the tip is located above the outer edge of the wafer W. The extension portions 34C and 35C are provided with a plurality of nozzles 32 and 33 at intervals along the extending direction. Therefore, the processing liquid can be supplied uniformly from the center portion of the wafer W to the outer edge portion.

［第４変形例］
図９は、第４変形例による液処理装置を示す断面図である。 [Fourth Modification]
FIG. 9 is a cross-sectional view showing a liquid processing apparatus according to a fourth modification.

液処理装置１Ｄは、ウエハＷを水平に支持し、ウエハＷと共に回転可能なウエハ支持部材１０Ｄと、ウエハ支持部材１０Ｄと一体的に回転可能に連結され、ウエハ支持部材１０Ｄの外周部１０Ｄａとの間に環状間隙ＧＰＤを形成する間隙形成部材２０Ｄとを有する。 The liquid processing apparatus 1D supports the wafer W horizontally, is rotatably coupled together with the wafer support member 10D and the wafer support member 10D, and is coupled to the outer peripheral portion 10Da of the wafer support member 10D. A gap forming member 20D that forms an annular gap GPD therebetween.

この液処理装置１Ｄでは、モータＭがウエハ支持部材１０Ｄ、ひいては、間隙形成部材２０ＤやウエハＷを回転させる。液供給部材３０は、回転するウエハＷに上方から処理液を供給する。回転するウエハＷに供給された処理液は、遠心力でウエハＷの外方に振り切られ、環状間隙ＧＰＤを通って、カップ４０内に回収される。このとき、排気機構５０がカップ４０内を排気することで、環状間隙ＧＰＤを介して、ウエハＷの上方空間からカップ４０に向かう気流を形成する。この気流は、処理液をカップ４０へ搬送する役割を果たす。以下、液処理装置１Ｄの各構成について説明するが、ウエハ支持部材１０Ｄおよび間隙形成部材２０Ｄ以外の構成については図２と同様であるので、説明を省略する。 In the liquid processing apparatus 1D, the motor M rotates the wafer support member 10D, and thus the gap forming member 20D and the wafer W. The liquid supply member 30 supplies the processing liquid to the rotating wafer W from above. The processing liquid supplied to the rotating wafer W is spun off to the outside of the wafer W by centrifugal force, and is collected in the cup 40 through the annular gap GPD. At this time, the exhaust mechanism 50 exhausts the inside of the cup 40, thereby forming an air flow from the upper space of the wafer W toward the cup 40 through the annular gap GPD. This air current plays a role of conveying the processing liquid to the cup 40. Hereinafter, although each structure of liquid processing apparatus 1D is demonstrated, since structures other than wafer support member 10D and gap | interval formation member 20D are the same as that of FIG. 2, description is abbreviate | omitted.

ウエハ支持部材１０Ｄは、ウエハＷを水平に支持し、ウエハＷと共に回転可能な部材である。ウエハ支持部材１０Ｄは、水平に配置される板形状のプレート部１１と、プレート部１１の下面側に取り付けられる回転軸部１２と、プレート部１１の上面側に取付けられる爪部１４Ｄとを有する。 The wafer support member 10 D is a member that supports the wafer W horizontally and can rotate together with the wafer W. The wafer support member 10 D includes a plate-shaped plate portion 11 that is horizontally disposed, a rotary shaft portion 12 that is attached to the lower surface side of the plate portion 11, and a claw portion 14 D that is attached to the upper surface side of the plate portion 11.

爪部１４Ｄは、プレート部１１から上方に延びており、先端部でウエハＷの下面周縁部に接してウエハＷを水平に支持する。爪部１４Ｄの先端部には、ウエハＷの厚さと略同じ高さの段差部が形成されており、高さの低い部分にウエハＷの下面周縁部が接している。爪部１４Ｄは、回転軸部１２の軸線の延長線を中心とする周方向に沿って間隔をおいて複数設けられている。 The claw portion 14 D extends upward from the plate portion 11, and contacts the lower surface peripheral portion of the wafer W at the tip portion to support the wafer W horizontally. A step portion having a height substantially the same as the thickness of the wafer W is formed at the tip portion of the claw portion 14D, and the peripheral portion of the lower surface of the wafer W is in contact with a portion having a low height. A plurality of the claw portions 14D are provided at intervals along the circumferential direction with the extension line of the axis of the rotary shaft portion 12 as the center.

プレート部１１の外周部には、回転軸部１２と平行な連結孔１６Ｄが、回転軸部１２を中心とする周方向に間隔をおいて複数設けられている。複数の連結孔１６Ｄには、間隙形成部材２０Ｄの下面側に取り付けられる複数の連結ピン２６Ｄが上下に移動可能に支持されており、ウエハ支持部材１０Ｄと間隙形成部材２０Ｄとが一体的に回転可能に連結されている。 A plurality of connecting holes 16 D parallel to the rotating shaft portion 12 are provided in the outer peripheral portion of the plate portion 11 at intervals in the circumferential direction centering on the rotating shaft portion 12. A plurality of connecting pins 26D attached to the lower surface side of the gap forming member 20D are supported in the plurality of connecting holes 16D so as to be movable up and down, and the wafer support member 10D and the gap forming member 20D can rotate integrally. It is connected to.

間隙形成部材２０Ｄは、ウエハ支持部材１０Ｄの上方に配置され、ウエハ支持部材１０Ｄと一体的に回転可能に連結され、ウエハ支持部材１０Ｄの外周部１０Ｄａとの間に環状間隙ＧＰＤを形成する部材である。 The gap forming member 20D is a member that is disposed above the wafer support member 10D, is rotatably connected integrally with the wafer support member 10D, and forms an annular gap GPD with the outer peripheral portion 10Da of the wafer support member 10D. is there.

間隙形成部材２０Ｄは、ウエハ支持部材１０Ｄにより支持されるウエハＷの外周を取り囲むように環形状に形成されている。間隙形成部材２０Ｄは、ウエハＷの外径よりも僅かに大きい内径を有している。そのため、ウエハＷの上面全体が上方に開放されており、ウエハＷの上面全体に、ファンフィルターユニットなどの気体供給機構において不純物が除去された気体がダウンフローで供給される。 The gap forming member 20D is formed in an annular shape so as to surround the outer periphery of the wafer W supported by the wafer support member 10D. The gap forming member 20 D has an inner diameter slightly larger than the outer diameter of the wafer W. Therefore, the entire upper surface of the wafer W is opened upward, and the gas from which impurities have been removed by a gas supply mechanism such as a fan filter unit is supplied to the entire upper surface of the wafer W in a down flow.

間隙形成部材２０Ｄは、外側に行くほど下方に向かうように傾斜しており、回転するウエハＷから振り切られた処理液、および処理液を運ぶ気流を、斜め下方向に案内し、カップ４０内に導く。 The gap forming member 20 D is inclined downward as it goes outward, and guides the processing liquid shaken off from the rotating wafer W and the airflow carrying the processing liquid obliquely downward into the cup 40. Lead.

間隙形成部材２０Ｄは、間隙形成部材２０Ｄを回転軸部１２の延長線を中心に回転可能に支持する支持部材１２１Ｄを介して、昇降機構１２２に接続されており、昇降機構１２２によって上下に移動可能である。 The gap forming member 20 D is connected to the lifting mechanism 122 via a support member 121 D that supports the gap forming member 20 D so as to be rotatable about the extension line of the rotating shaft 12, and can be moved up and down by the lifting mechanism 122. It is.

昇降機構１２２は、間隙形成部材２０Ｄを上昇または下降させて、環状間隙ＧＰＤを調節する役割を果たす。昇降機構１２２が間隙形成部材２０Ｄを上方に移動させると、環状間隙ＧＰＤが広がる。一方、昇降機構１２２が間隙形成部材２０Ｄを下方に移動させると、環状間隙ＧＰＤが狭くなる。環状間隙ＧＰＤを調節することで、環状間隙ＧＰＤを介して、内側から外側へ流れる気流の状態（流速、流量などを含む）を調節することができる。 The elevating mechanism 122 serves to adjust the annular gap GPD by raising or lowering the gap forming member 20D. When the lifting mechanism 122 moves the gap forming member 20D upward, the annular gap GPD increases. On the other hand, when the lifting mechanism 122 moves the gap forming member 20D downward, the annular gap GPD becomes narrower. By adjusting the annular gap GPD, it is possible to adjust the state of the airflow (including the flow velocity and the flow rate) flowing from the inside to the outside via the annular gap GPD.

従って、図２に示す液処理装置１と同様に、ウエハＷの処理液の工程に応じて、環状間隙ＧＰＤを調節し、ウエハＷの上方における気流の状態を最適化することができる。気流の状態の最適化は、ウエハＷの回転中に実施されてもよいし、回転前に実施されてもよい。 Therefore, similarly to the liquid processing apparatus 1 shown in FIG. 2, the annular gap GPD can be adjusted according to the process of the processing liquid on the wafer W, and the state of the airflow above the wafer W can be optimized. The optimization of the airflow state may be performed during the rotation of the wafer W, or may be performed before the rotation.

なお、液処理装置１Ｄは、第１変形例と同様に、環状間隙ＧＰＤを上下に区画する環状の仕切り壁を有してもよく、また、第２変形例と同様に、ラビリンス構造を有してもよい。 Note that the liquid processing apparatus 1D may have an annular partition wall that divides the annular gap GPD vertically as in the first modification, and has a labyrinth structure as in the second modification. May be.

以上、本発明の実施形態および変形例について説明したが、本発明は、上記の実施形態および変形例に制限されない。本発明の範囲を逸脱することなく、種々の変形や置換が可能である。 As mentioned above, although embodiment and the modification of this invention were described, this invention is not restrict | limited to said embodiment and the modification. Various modifications and substitutions can be made without departing from the scope of the present invention.

例えば、上記の液処理装置１〜１Ｄは、ウエハＷの上面に処理液を供給して、ウエハＷの上面を液処理する装置であるが、ウエハＷの上面および下面のそれぞれに処理液を同時に供給して、ウエハＷの上面および下面の両面を同時に液処理する装置であってもよい。 For example, the liquid processing apparatuses 1 to 1D described above are apparatuses that supply the processing liquid to the upper surface of the wafer W and perform liquid processing on the upper surface of the wafer W. The processing liquid is simultaneously applied to each of the upper and lower surfaces of the wafer W. An apparatus for supplying and simultaneously liquid-treating both the upper surface and the lower surface of the wafer W may be used.

また、ウエハＷは半導体ウエハに限らず、例えばＦＰＤ用のガラス基板であってもよい。 The wafer W is not limited to a semiconductor wafer, and may be a glass substrate for FPD, for example.

１液処理装置
１０ウエハ支持部材
１３外周部
２０カバー（間隙形成部材）
２３外周部
２４開口部
３０液供給部材
４０カップ
５０排気機構
７１Ａ仕切り壁
７２Ａ連結部材
１２２カバー昇降機構
Ｗウエハ（基板）
Ｍモータ（回転機構）
ＧＰ環状間隙 1 Liquid processing apparatus 10 Wafer support member 13 Outer peripheral part 20 Cover (gap forming member)
23 Peripheral part 24 Opening part 30 Liquid supply member 40 Cup 50 Exhaust mechanism 71A Partition wall 72A Connection member 122 Cover lifting mechanism W Wafer (substrate)
M motor (rotating mechanism)
GP annular gap

Claims

In a liquid processing apparatus for liquid processing a substrate,
A support member that supports the substrate horizontally and is rotatable;
A rotation mechanism for rotating the support member;
A liquid supply member for supplying a processing liquid from above to the substrate supported by the support member;
A gap forming member that is disposed above the support member, is rotatably coupled integrally with the support member, and forms an annular gap with an outer periphery of the support member;
Through the annular gap, and a cup for collecting the processing liquid shaken off from the substrate to be rotated,
An elevating mechanism for elevating and lowering the gap forming member,
The elevating mechanism rotates the rotation mechanism so that the state of the airflow above the substrate supported by the support member corresponds to the type of the processing liquid supplied to the substrate and / or the rotation speed of the substrate. By raising or lowering the gap forming member in a state where the support member and the gap forming member are integrally rotated by a mechanism, the kind of the processing liquid that supplies the annular gap to the substrate and / or the A liquid processing apparatus that adjusts the substrate according to the number of rotations .

The liquid processing apparatus according to claim 1, wherein a guide portion that guides an airflow flowing outward through the annular gap is provided on an outer peripheral portion of the support member.

The liquid supply member is sequentially supplies a plurality of types of the treatment liquid on the substrate,
The liquid processing apparatus has a control device for controlling the lifting mechanism,
The control device controls the lifting mechanism so that the state of the airflow above the substrate supported by the support member is in accordance with the type of the processing liquid supplied to the substrate. The annular gap is adjusted to one corresponding to the type of the processing liquid by raising or lowering the gap forming member in a state where the support member and the gap forming member are integrally rotated by a mechanism. 3. The liquid processing apparatus according to 1 or 2.

The liquid supply member sequentially supplies a chemical liquid and a rinsing liquid for removing the chemical liquid to the substrate,
The annular gap when the chemical liquid having a temperature higher than that of the rinse liquid is supplied to the substrate is set narrower than the annular gap when the rinse liquid is supplied to the substrate. Liquid processing equipment.

An annular partition wall that vertically partitions the annular gap;
And further comprising a connecting member that connects the partition wall and the outer peripheral portion of the support member or the gap forming member,
The liquid processing apparatus according to any one of claims 1 to 4, wherein a gap through which an airflow passes is formed between the partition wall and an outer peripheral portion of the support member or the gap forming member.

In a liquid processing method for liquid processing a substrate,
Supporting the substrate horizontally by a support member;
A step of integrally rotating a gap forming member that forms an annular gap between the support member, the substrate supported by the support member, and an outer peripheral portion of the support member;
From the liquid supply member disposed above the substrate to be rotated, a step of supplying the processing liquid to the substrate,
Through the annular gap, as well as collecting the processing liquid shaken off from the substrate to rotate the cup, a step of exhausting the inside of the cup,
Formation of the gap between the support member and the support member so that the state of the airflow above the substrate supported by the support member corresponds to the type of the processing liquid supplied to the substrate and / or the number of rotations of the substrate. The type of the processing liquid for supplying the annular gap to the substrate and / or the lowering the gap forming member relative to the support member while the member is rotated integrally with the member. And a step of adjusting the substrate according to the number of rotations .

The liquid processing method according to claim 6, wherein a guide portion that guides an airflow flowing outward through the annular gap is provided on an outer peripheral portion of the support member.

The liquid supply member, sequentially supplies a plurality of types of the treatment liquid on the substrate,
The support member and the gap forming member are rotated together so that the state of the airflow above the substrate supported by the support member corresponds to the type of the processing liquid supplied to the substrate. The liquid processing according to claim 6 or 7, wherein the annular gap is adjusted according to the type of the processing liquid by raising or lowering the gap forming member relative to the support member in a state where the liquid is formed. Method.

The liquid supply member sequentially supplies a chemical liquid and a rinsing liquid for removing the chemical liquid to the substrate,
The annular gap when the chemical liquid having a temperature higher than that of the rinse liquid is supplied to the substrate is set to be narrower than the annular gap when the rinse liquid is supplied to the substrate. Liquid processing method.

An annular partition wall that vertically partitions the annular gap;
A connecting member that connects the partition wall and the outer peripheral portion of the support member or the gap forming member is used.
The liquid processing method according to any one of claims 6 to 9, wherein a gap for allowing an air flow to pass is formed between the partition wall and an outer peripheral portion of the support member or the gap forming member.