JP5697779B1 - converter - Google Patents

Abstract

In a converter for connecting a waveguide and a microstrip line, reflection generated between the waveguide and the microstrip line is suppressed. A converter includes a waveguide, a first dielectric layer, and a first planar conductor and a second planar conductor facing each other via the first dielectric layer. 103, a post-wall waveguide 12 composed of the second dielectric layer 104, and a second planar conductor 103 and a strip-shaped conductor 105 which are opposed to each other via the second dielectric layer 104. A strip line 13. [Selection] Figure 1

Description

  The present invention relates to a converter for connecting a waveguide and a microstrip line, that is, a converter for mutually converting a waveguide mode of a waveguide and a waveguide mode of a microstrip line.

  With the demand for higher speed and larger capacity of wireless communication, the frequency band used for wireless communication has been increased. For this reason, the frequency of signals to be processed by the wireless device is also increasing. Specifically, it is necessary to process a high-frequency signal having a frequency (30 GHz or more and 300 GHz or less) corresponding to a millimeter wave.

  An example of a transmission medium that can efficiently transmit such a high-frequency signal is a waveguide. However, the waveguide cannot be directly connected to the integrated circuit mounted on the substrate. For this reason, a configuration in which a microstrip line is interposed between an integrated circuit and a waveguide is widely used. When such a configuration is employed, it is important to realize a low loss connection between the waveguide and the microstrip line.

  As a structure for connecting the microstrip line and the waveguide with low loss, the waveguide is connected to the back surface of the microstrip line (the surface on which the planar conductor functioning as the ground is formed) and guided to the waveguide. A shorted waveguide block that functions as a back short (hereinafter also referred to as “back short block”) is placed on the surface of the microstrip line (the surface on which the strip-shaped conductor that functions as a signal line is formed) so as to face the tube. The structure to be known is known.

  In Patent Documents 1 and 2, a short-circuited waveguide (hereinafter referred to as “dielectric waveguide”) formed in a dielectric substrate is used as a back short, and between the microstrip line and the waveguide. A configuration for reducing the resulting reflection is described. In the structure described in Patent Document 1, the waveguide is directly connected to the back surface of the microstrip line. On the other hand, in the structure described in Patent Document 2, the waveguide is connected to the back surface of the microstrip line via a base in which an opening is formed. In particular, in the structure described in Patent Document 2, the reflection between the microstrip line and the waveguide is suppressed by tapering the opening of the base. Further, by filling the opening of the base with a dielectric, the base can be made thin.

JP 2008-193162 A (released on August 21, 2008) JP 2008-193243 A (released on August 21, 2008)

  In order to realize a low loss connection between the waveguide and the microstrip line, it is necessary to suppress reflection that occurs between the waveguide and the microstrip line. In order to minimize the reflection that occurs between the waveguide and the microstrip line, the distance from the end of the strip-shaped conductor constituting the microstrip line to the entrance of the waveguide is set to the wavelength of the electromagnetic wave to be transmitted. It is necessary to optimize accordingly. In the structures described in Patent Documents 1 and 2, reflection that occurs between the waveguide and the microstrip line is suppressed by causing the short-circuited waveguide formed in the dielectric substrate to function as a back short. Nonetheless, in order to minimize such reflection, the distance from the tip of the strip-shaped conductor constituting the microstrip line to the entrance of the waveguide is optimized according to the wavelength of the electromagnetic wave to be transmitted. There is a need.

  However, when the waveguide is directly connected to the back surface of the microstrip line as in the structure described in Patent Document 1, the distance from the front end of the strip-shaped conductor constituting the microstrip line to the inlet of the waveguide can be freely set. It cannot be changed. This is because in order to change the distance from the end of the strip conductor constituting the microstrip line to the entrance of the waveguide, the thickness of the dielectric substrate constituting the microstrip line must be changed. This is because the impedance of the line deviates from a desired value.

  On the other hand, when the waveguide is connected to the back surface of the microstrip line via the base as in the structure described in Patent Document 2, the strip-shaped conductor constituting the microstrip line is changed by changing the thickness of the base. The distance from the tip of the waveguide to the entrance of the waveguide can be freely changed. However, since the base is made of metal, there is a problem that when the thickness is increased, the weight is remarkably increased or the flexibility is remarkably decreased.

  In the structures described in Patent Documents 1 and 2, reflection that occurs between the microstrip line and the waveguide is suppressed by causing the dielectric waveguide to function as a back short. For this reason, the part covered with the dielectric waveguide and the part not covered with the strip | belt-shaped conductor which comprise a microstrip line are made. Since the characteristic impedance differs between the portion covered by the dielectric waveguide and the portion not covered, reflection occurs at the boundary between these portions. Therefore, even if the reflection that occurs between the microstrip line and the waveguide is suppressed, the reflection characteristics of the entire device are not necessarily improved significantly. Further, in the structure described in Patent Document 2, since it is necessary to taper the opening of the base or to fill the dielectric, it is inevitable that the number of man-hours required for the manufacture is increased.

  The present invention has been made in view of the above problems, and the purpose thereof is a converter for connecting a waveguide and a microstrip line, while being a simple structure that can be manufactured with a small number of man-hours. An object of the present invention is to realize a structure capable of suppressing the reflection generated between the waveguide and the microstrip line without significantly increasing the weight or reducing the flexibility.

  In order to solve the above-described problems, a converter according to the present invention is directed to a waveguide, a first dielectric layer having a post wall formed therein, and the first dielectric layer facing each other. A post-wall waveguide composed of a first planar conductor and a second planar conductor connected to the waveguide through a first opening formed in the first planar conductor A microstrip line composed of the post wall waveguide formed, the second dielectric layer, and the second planar conductor and the strip conductor facing each other through the second dielectric layer. And a microstrip line connected to the post wall waveguide through a second opening formed in the second planar conductor.

  According to the above configuration, since the microstrip line and the waveguide are connected via the post wall waveguide, by changing the thickness of the first dielectric layer constituting the post wall waveguide, The distance from the front end of the strip-shaped conductor constituting the microstrip line to the entrance of the waveguide can be freely changed. This makes it possible to suppress reflection that may occur between the microstrip line and the waveguide. Moreover, even if the thickness of the first dielectric layer constituting the post-wall waveguide is increased, the weight is remarkably increased or the flexibility is remarkably decreased as when the thickness of the metal layer is increased. Absent. Therefore, according to said structure, the reflection which arises between a microstrip line and a waveguide can be suppressed without accompanying a remarkable increase in weight and a remarkable fall in flexibility. In addition, the converter configured as described above is a simple structure that can be realized as a dielectric substrate, and, like the structure described in Patent Document 2, it is manufactured by taper processing or dielectric filling. It does not require man-hours.

  In the converter according to the present invention, the center frequency of the operation band of the converter is f [Hz], the wavelength corresponding to the center frequency f is λ = c / f [m] (c is the speed of light), and The thickness h1 of one dielectric layer preferably satisfies 0.04 ≦ h1 / λ ≦ 0.14.

  According to the above configuration, a converter having excellent reflection characteristics and transmission characteristics can be realized. Specifically, the worst value of | S11 | in the operating band can be approximately −6 dB or less, and the worst value of | S21 | in the operating band can be approximately −3 dB or more.

  In the above converter, the thickness h2 of the second dielectric layer preferably satisfies 0.05 ≦ h2 / h1 ≦ 0.15.

  According to the above configuration, a converter having excellent reflection characteristics and transmission characteristics can be realized. Specifically, the worst value of | S11 | in the operating band can be approximately −6 dB or less, and the worst value of | S21 | in the operating band can be approximately −3 dB or more.

  The converter according to the present invention further includes a conductor block that covers the tip of the strip conductor, and a direction from the root to the tip of the strip conductor is defined as a y-axis positive direction, and a direction orthogonal to the y-axis positive direction. Among them, in the orthogonal coordinate system (right-handed system) in which the direction from the strip conductor to the second planar conductor is the z-axis negative direction, the conductor block is opened in the y-axis negative direction and the z-axis negative direction. A first part of a rectangular parallelepiped shape dug in the y-axis positive direction from the side surface on the y-axis negative direction side of the conductor block; and the x-axis positive direction from the tip of the first part; It is preferable that a T-shaped concave portion formed of a rectangular parallelepiped second portion dug in the negative x-axis direction is formed.

  According to the above configuration, the bandwidth in which | S11 | is equal to or less than the design target value (specifically −6 dB) and the bandwidth in which | S21 | is equal to or greater than the design target value (specifically −3 dB). Can be enlarged.

  In the converter according to the present invention, the length in the x-axis direction of the second part is Wbcsh, and the width Wvoid in the x-axis direction of the first part satisfies 0.43 ≦ Wvoid / Wbcsh. preferable.

  According to the above configuration, a converter having excellent reflection characteristics and transmission characteristics can be realized. Specifically, the worst value of | S11 | in the operating band can be approximately −6 dB or less, and the worst value of | S21 | in the operating band can be approximately −3 dB or more.

  In the converter according to the present invention, the length in the x-axis direction of the second portion is Wbcsh, and the length Lbcsh in the y-axis direction of the first portion is 0.275 ≦ Lbcsh / Wbcsh ≦ 0.375. Or it is preferable to satisfy 0.44 ≦ Lbcsh / Wbcsh.

  According to the above configuration, a converter having excellent reflection characteristics and transmission characteristics can be realized. Specifically, the worst value of | S11 | in the operating band can be approximately −6 dB or less, and the worst value of | S21 | in the operating band can be approximately −3 dB or more.

  In the converter according to the present invention, the first opening is a rectangle having a side parallel to the extending direction of the strip conductor and a side perpendicular to the extending direction of the strip conductor, and the side parallel to the strip conductor of the first opening. The length Wap0 of the side perpendicular to the strip conductor of the first opening preferably satisfies 1.6 ≦ Wap0 / Lap0.

  According to the above configuration, a converter having excellent reflection characteristics and transmission characteristics can be realized. Specifically, the worst value of | S11 | in the operating band can be approximately −6 dB or less, and the worst value of | S21 | in the operating band can be approximately −3 dB or more.

  In the converter according to the present invention, the second opening is a rectangle having a side parallel to the extending direction of the strip conductor and a side perpendicular to the extending direction of the strip conductor, and the side parallel to the strip conductor of the second opening. The length Wap1 of the side perpendicular to the strip conductor of the second opening preferably satisfies 0.95 ≦ Wap1 / Lap1 ≦ 1.25.

  According to the above configuration, a converter having excellent reflection characteristics and transmission characteristics can be realized. Specifically, the worst value of | S11 | in the operating band can be approximately −6 dB or less, and the worst value of | S21 | in the operating band can be approximately −3 dB or more.

  In the converter according to the present invention, the position passing through the tube axis of the waveguide is a reference position, and the inner diameter of the waveguide in the direction perpendicular to the extending direction of the strip conductor is Wwg. The offset δmsl from the reference position preferably satisfies 0 ≦ δmsl / Wwg ≦ 0.12.

  According to the above configuration, a converter having excellent reflection characteristics and transmission characteristics can be realized. Specifically, the worst value of | S11 | in the operating band can be approximately −6 dB or less, and the worst value of | S21 | in the operating band can be approximately −3 dB or more.

  In the converter according to the present invention, it is preferable that the width of the strip conductor is Wmsl and 0 <Wmsl ≦ 0.04 is satisfied.

  According to the above configuration, a converter having excellent reflection characteristics and transmission characteristics can be realized. Specifically, the worst value of | S11 | in the operating band can be approximately −6 dB or less, and the worst value of | S21 | in the operating band can be approximately −3 dB or more.

  In the converter for connecting the waveguide and the microstrip line, the present invention is a simple structure that can be manufactured with a small number of man-hours, without significant increase in weight or significant decrease in flexibility. There is an effect of realizing a structure capable of suppressing reflection generated between the waveguide and the microstrip line.

It is a disassembled perspective view of the converter which concerns on one Embodiment of this invention. It is sectional drawing of the converter shown in FIG. It is a top view of the 1st planar conductor with which the converter concerning a 1st example is provided. It is a top view of the 2nd planar conductor with which the converter concerning a 1st example is provided. It is a top view of the strip | belt-shaped conductor with which the converter which concerns on a 1st Example is provided, and a C-shaped conductor. It is a three-plane figure of the conductor block with which the converter concerning a 1st example is provided. (A) is a graph which shows the reflective characteristic of the converter which concerns on a 1st Example, (b) is a graph which shows the permeation | transmission characteristic of the converter. It is sectional drawing of the converter which concerns on a 1st modification and a 2nd modification. (A) is a graph which shows the reflective characteristic of the converter which concerns on a 1st modification, (b) is a graph which shows the permeation | transmission characteristic of the converter. (C) is a graph showing the h1 / λ dependency of the worst value of | S11 |, and (d) is a graph showing the h1 / λ dependency of the worst value of | S21 |. (A) is a graph which shows the reflective characteristic of the converter which concerns on a 2nd modification, (b) is a graph which shows the permeation | transmission characteristic of the converter. (C) is a graph showing h2 / h1 dependence of the worst value of | S11 |, and (d) is a graph showing h2 / h1 dependence of the worst value of | S21 |. It is a top view of the 1st planar conductor with which the converter concerning the 3rd modification is provided. (A) is a graph which shows the reflective characteristic of the converter which concerns on a 3rd modification, (b) is a graph which shows the permeation | transmission characteristic of the converter. (C) is a graph showing the Wap0 / Lap0 dependency of the worst value of | S11 |, and (d) is a graph showing the Wap0 / Lap0 dependency of the worst value of | S21 |. It is a top view of the 2nd planar conductor with which the converter concerning the 4th modification is provided. (A) is a graph which shows the reflective characteristic of the converter which concerns on a 4th modification, (b) is a graph which shows the permeation | transmission characteristic of the converter. (C) is a graph showing the Wap1 / Lap1 dependency of the worst value of | S11 |, and (d) is a graph showing the Wap1 / Lap1 dependency of the worst value of | S21 |. It is a top view of the strip | belt-shaped conductor with which the converter which concerns on a 5th modification is provided, and a C-shaped conductor. (A) is a graph which shows the reflective characteristic of the converter which concerns on a 5th modification, (b) is a graph which shows the permeation | transmission characteristic of the converter. (C) is a graph showing the δmsl / Wwg dependency of the worst value of | S11 |, and (d) is a graph showing the δmsl / Wwg dependency of the worst value of | S21 |. It is a top view of the strip | belt-shaped conductor with which the converter which concerns on a 6th modification is provided, and a C-shaped conductor. (A) is a graph which shows the reflective characteristic of the converter which concerns on a 6th modification, (b) is a graph which shows the permeation | transmission characteristic of the converter. (C) is a graph showing the Wmsl / λ dependency of the worst value of | S11 |, and (d) is a graph showing the Wmsl / λ dependency of the worst value of | S21 |. It is a top view of the conductor block with which the converter concerning a 7th modification is provided. (A) is a graph which shows the reflective characteristic of the converter which concerns on a 7th modification, (b) is a graph which shows the permeation | transmission characteristic of the converter. (C) is a graph showing the Lbcsh / Wbcsh dependency of the worst value of | S11 |, and (d) is a graph showing the Lbcsh / Wbcsh dependency of the worst value of | S21 |. It is a top view of the conductor block with which the converter concerning an 8th modification is provided. (A) is a graph which shows the reflective characteristic of the converter which concerns on an 8th modification, (b) is a graph which shows the permeation | transmission characteristic of the converter. (C) is a graph showing the Wvoid / Wbcsh dependency of the worst value of | S11 |, and (d) is a graph showing the Wvoid / Wbcsh dependency of the worst value of | S21 |. (A) is a perspective view of the conductor block with which the converter concerning a 1st example is provided, (b) is a perspective view of the conductor block with which the converter concerning a 9th modification is provided. (A) is a graph which shows the reflective characteristic of the converter which concerns on a 1st Example, and the reflective characteristic of the converter which concerns on a 9th modification, (b) is the conversion which concerns on a 1st Example It is a graph which shows the transmission characteristic of a converter, and the transmission characteristic of the converter which concerns on a 9th modification. It is a top view of the 1st planar conductor with which the converter concerning a 2nd example is provided. It is a top view of the 2nd planar conductor with which the converter concerning a 2nd example is provided. It is a top view of the strip | belt-shaped conductor with which the converter which concerns on a 2nd Example is provided, and a C-shaped conductor. It is a three-plane figure of the conductor block with which the converter concerning a 2nd example is provided. It is a graph which shows the reflective characteristic and transmission characteristic of the converter which concern on a 2nd Example. It is a perspective view of the converter which concerns on a 3rd Example.

[Construction of the converter]
The converter which concerns on one Embodiment of this invention is demonstrated with reference to FIG.1 and FIG.2. FIG. 1 is an exploded perspective view of a converter 1 according to this embodiment, and FIG. 2 is a cross-sectional view of the converter 1 according to this embodiment.

  The converter 1 is a converter for connecting the waveguide 11 and the microstrip line 13 to each other. As shown in FIG. 1, the waveguide 11, the post wall waveguide 12, the microstrip line 13, and A back short block 14 is provided.

  The waveguide 11 is a tubular member whose both ends are open, and its tube wall is made of a conductor such as metal. The cavity 11a formed inside the waveguide 11 may be filled with air or a dielectric other than air, but in the present embodiment, the former configuration is adopted. . The waveguide 11 is arranged so that its tube axis is parallel to the z axis in the illustrated coordinate system.

  The post wall waveguide 12 includes a first dielectric layer 102, and a first planar conductor 101 and a second planar conductor 103 that are opposed to each other with the first dielectric layer 102 interposed therebetween. The first dielectric layer 102 has a post wall 102a made up of a plurality of conductor posts 102a1, 102a2,..., 102aN arranged in a fence shape. Each conductor post 102ai (i = 1, 2,..., N) has a cylindrical conductor (specifically, a lower end connected to the first planar conductor 101 and an upper end connected to the second planar conductor 103. Specifically, conductor plating formed on the wall surface of the through hole penetrating the first dielectric layer 102.

  In the post wall waveguide 12, a rectangular parallelepiped sandwiched between the first planar conductor 101 and the second planar conductor 103 in the first dielectric layer 102 and surrounded by the post wall 102a. The region is a waveguide region 102b that guides electromagnetic waves. The post wall waveguide 12 is arranged so that the first planar conductor 101 and the second planar conductor are parallel to the xy plane in the illustrated coordinate system.

  An opening 101 a is formed in the first planar conductor 101. The position of the opening 101a is a position overlapping the waveguide region 102b of the first dielectric layer 102 when viewed from the negative z-axis direction, and the shape of the opening 101a is a side parallel to the x-axis and a side parallel to the y-axis. And a rectangle with The waveguide region 102b of the first dielectric layer 102 communicates with the cavity 11a of the waveguide 11 through the opening 101a. That is, the post wall waveguide 12 is electromagnetically connected to the waveguide 11 through the opening 101a.

  The microstrip line 13 includes a second dielectric layer 104, and a second planar conductor 103 and a strip-shaped conductor 105 that face each other with the second dielectric layer 104 interposed therebetween. The strip conductor 105 extends in the positive y-axis direction in the illustrated coordinate system, and its tip reaches a position overlapping the waveguide region 102b of the first dielectric layer 102 when viewed from the positive z-axis direction. In the microstrip line 13, a rectangular parallelepiped region sandwiched between the strip conductor 105 and the second planar conductor 103 in the second dielectric layer 104 is a waveguide region 104b that guides electromagnetic waves. Become.

  An opening 103 a is formed in the second planar conductor 103. The position of the opening 103a is a position overlapping the waveguide region 102b of the first dielectric layer 102 when viewed from the positive direction of the z axis, and the shape of the opening 103a is a side parallel to the x axis and a side parallel to the y axis. And a rectangle with The waveguide region 104b of the second dielectric layer 104 communicates with the waveguide region 102b of the first dielectric layer 102 through the opening 103a. That is, the microstrip line 13 is electromagnetically connected to the post wall waveguide 12 through the opening 103a.

  Inside the second dielectric layer 104, a post wall that surrounds the tip portion of the strip conductor 105 and the region sandwiched between the top and bottom of the second planar conductor 103 (that is, the tip portion of the waveguide region 104b) from three directions. 104a is formed. The post wall 104a is a set of a plurality of conductor posts 104a1, 104a2,..., 104aM arranged in a fence shape. Each conductor post 104ai (i = 1, 2,..., M) is formed on a cylindrical conductor (specifically, on the second dielectric layer 104) whose lower end is connected to the second planar conductor 103. Conductor plating formed on the wall surface of the through hole. Further, on the upper surface of the second dielectric layer 104, a C-shaped conductor 106 is formed together with the strip-shaped conductor 105 so as to surround the front end portion of the strip-shaped conductor 105 from three directions. The upper ends of the respective conductor posts 104ai constituting the post wall 104a are connected to the C-shaped conductor 106.

  The back short block 14 is a rectangular parallelepiped conductor block in which a concave portion 14 a is formed, and is disposed on the upper surface of the second dielectric layer 104 so as to cover the front end portion of the strip-shaped conductor 105. The recess 14a is open in the negative y-axis direction and the negative z-axis direction in the illustrated coordinate system, and is a rectangular parallelepiped dug in the positive y-axis direction from the side surface of the back short block 14 on the negative y-axis side. A first portion 14a1 having a rectangular shape and a second portion 14a2 having a rectangular parallelepiped shape dug in the x-axis positive direction and the x-axis negative direction from the tip of the first portion 14a1.

  Of the conductor posts 102ai formed on the first dielectric layer 102, the ones connected to the conductor posts 104ai formed on the second dielectric layer 104 (shown as conductor posts 102a1 in FIG. 2) are the first ones. This is realized as a through via that penetrates through the dielectric layer 102 and the second dielectric layer 104 and extends from the first planar conductor 101 to the C-shaped conductor 106 (see FIG. 2). On the other hand, among the conductor posts 102ai formed on the first dielectric layer 102, those not connected to the conductor posts 104ai formed on the second dielectric layer 104 (shown as the conductor posts 102a2 in FIG. 2) This is realized as a blind via that penetrates only one dielectric layer 102 and extends from the first planar conductor 101 to the second planar conductor 103 (see FIG. 2).

  In the converter 1, the waveguide mode of the waveguide 11 is converted to the waveguide mode of the microstrip line 13 as follows. That is, the electromagnetic wave input to the waveguide 11 from the end on the negative z-axis side is guided in the z-axis positive direction through the cavity 11 a of the waveguide 11. The electromagnetic wave guided in the positive z-axis direction through the cavity 11 a of the waveguide 11 enters the post-wall waveguide 12 through the opening 101 a formed in the first planar conductor 101. The electromagnetic wave incident on the post wall waveguide 12 in this way is guided in the z-axis positive direction through the waveguide region 102b of the first dielectric layer 102. The electromagnetic wave guided in the z-axis positive direction through the waveguide region 102 b of the first dielectric layer 102 enters the microstrip line 13 through the opening 103 a formed in the second planar conductor 103. The electromagnetic wave incident on the microstrip line 13 in this way is guided in the y-axis negative direction through the waveguide region 104b of the second dielectric layer 104. The electromagnetic wave guided in the y-axis negative direction through the waveguide region 104b of the second dielectric layer 104 is output from the end of the microstrip line 13 on the y-axis negative direction side.

  In the converter 1, the waveguide mode of the microstrip line 13 is converted to the waveguide mode of the waveguide 11 as follows. That is, the electromagnetic wave input to the microstrip line 13 from the end on the negative y-axis side is guided in the positive y-axis direction through the waveguide region 104b of the second dielectric layer 104. The electromagnetic wave guided in the y-axis positive direction through the waveguide region 104 b of the second dielectric layer 104 is incident on the post wall waveguide 12 through the opening 103 a formed in the second planar conductor 103. Thus, the electromagnetic wave incident on the post wall waveguide 12 is guided in the negative z-axis direction through the waveguide region 102b of the first dielectric layer 102. The electromagnetic wave guided in the negative z-axis direction through the waveguide region 102 b of the first dielectric layer 102 enters the waveguide 11 through the opening 101 a formed in the first planar conductor 101. Thus, the electromagnetic wave incident on the waveguide 11 is guided through the cavity 11a of the waveguide 11 in the negative z-axis direction. The electromagnetic wave guided through the cavity 11 a of the waveguide 11 in the negative z-axis direction is output from the end of the waveguide 11 on the negative z-axis direction side.

  Here, in the converter 1, in the second dielectric layer 104, the region sandwiched between the tip of the strip conductor 105 and the second planar conductor 103 (that is, the tip of the waveguide region 104b) is a post. Three sides are surrounded by the wall 104a, and the back short block 14 is disposed above a region of the second dielectric layer 104 surrounded by the three sides by the post wall 104a. For this reason, the electromagnetic wave guided through the post wall waveguide 12 is efficiently incident on the microstrip line 13 and the electromagnetic wave guided through the microstrip line 13 is efficiently incident on the post wall waveguide 12. It becomes possible to make it. That is, when the waveguide mode of the post wall waveguide 12 is converted to the waveguide mode of the microstrip line 13 and when the waveguide mode of the microstrip line 13 is converted to the waveguide mode of the post wall waveguide 12. It is possible to suppress a possible loss.

  A characteristic point of the converter 1 according to the present embodiment when compared with the structures described in Patent Documents 1 and 2 is that a post wall waveguide 12 is interposed between the waveguide 11 and the microstrip line 13. It is a point. Thereby, by changing the thickness of the first dielectric layer 102, it is possible to freely change the distance from the tip of the strip conductor 105 constituting the microstrip line 13 to the entrance of the waveguide 11. . Thereby, it is possible to suppress reflection that occurs between the microstrip line 13 and the waveguide 11. Further, even if the thickness of the first dielectric layer 102 is increased, the weight is not significantly increased and the flexibility is not significantly decreased unlike the case where the thickness of the metal layer is increased. Therefore, according to the converter 1 according to the present embodiment, it is possible to suppress the reflection that occurs between the microstrip line 13 and the waveguide 11 without significantly increasing the weight or significantly decreasing the flexibility. it can.

  Note that the coordinate system shown in FIG. 1 is determined as follows. That is, (1) an axis parallel to the axial direction of the strip conductor 105 is taken as a y-axis. The direction of the y-axis is determined so that the direction from the base of the strip-shaped conductor 105 toward the tip is a positive direction. (2) The axis parallel to the thickness direction of the strip conductor 105 is taken as the z-axis. The direction of the z-axis is determined such that the direction from the strip-shaped conductor 105 toward the second planar conductor 103 is a negative direction. (3) The axis parallel to the width direction of the strip conductor 105 is taken as the x-axis. The direction of the x axis is determined so that the x axis forms a right-handed system together with the y axis and the z axis described above.

[Example 1]
A first example of the converter 1 according to this embodiment will be described with reference to FIGS.

  In the converter 1 according to the present embodiment, each part of the converter 1 shown in FIG. 1 is configured as follows so that the operating band is the 60 GHz band (frequency band having 60 GHz as a central frequency).

  Waveguide 11: As the waveguide 11, a rectangular waveguide WR-15 (EIA standard) was used.

  First planar conductor 101: A conductor (specifically copper) pattern having the shape shown in FIG. 3 is formed on the lower surface of the first dielectric layer 102, and this is used as the first planar conductor 101. .

  First dielectric layer 102: As the first dielectric layer 102, a liquid crystal polymer substrate having a relative dielectric constant of 3, a dielectric loss tangent of 0.003, and a thickness of 500 μm was used.

  Second planar conductor 103: A conductor (specifically copper) pattern having the shape shown in FIG. 4 is formed on the lower surface of the second dielectric layer 104, and this is used as the second planar conductor 103. .

  Second dielectric layer 104: As the second dielectric layer 104, a liquid crystal polymer substrate having a relative dielectric constant of 3, a dielectric loss tangent of 0.003, and a thickness of 50 μm was used.

  Band-shaped conductor 105 and C-shaped conductor 106: A conductor (specifically copper) pattern having the shape shown in FIG. 5 is formed on the upper surface of the second dielectric layer 104, and this is formed into the band-shaped conductor 105 and the C-shaped conductor. Used as 106.

  Conductor post 102ai and conductor post 104ai: A through via having a diameter of 100 μm penetrating both layers is formed in a multilayer substrate including the first dielectric layer 102 and the second dielectric layer 104, and this is formed into the conductor post 102a1 and the conductor post 102a1. Used as 104a1 (see FIG. 2). Also, a blind via having a diameter of 100 μm that penetrates only the first dielectric layer 102 is formed on the multilayer substrate including the first dielectric layer 102 and the second dielectric layer 104, and this is used as the conductor post 102a2. (See FIG. 2). The distance between the central axes of the two conductor posts 102ai and 102aj adjacent to each other and the distance between the central axes of the two conductor posts 104ai and 104aj adjacent to each other were 200 μm.

  Back short block 14: As the back short block 14, an aluminum block having a recess 14a having the shape shown in FIG. 6 was used.

  FIG. 7A is a graph showing the reflection characteristic of the converter 1 according to the present embodiment (the frequency characteristic of the magnitude of the S parameter S11 | S11 |), and FIG. 7B is a graph according to the present embodiment. 6 is a graph showing transmission characteristics (frequency characteristics of S parameter S21 magnitude | S21 |) of converter 1;

  Referring to FIG. 7 (a), it can be seen that | S11 | is lower than -6 dB, which is a general requirement level, at all frequencies of 50 GHz to 70 GHz. Further, referring to FIG. 7B, it can be seen that | S21 | exceeds the general required level of −3 dB at all frequencies of 50 GHz to 70 GHz.

[Modification 1]
A first modification of the converter 1 according to the first embodiment will be described with reference to FIGS.

  The converter 1 according to the present modification is obtained by changing the thickness h1 (see FIG. 8) of the first dielectric layer 102 constituting the post wall waveguide 12 in the converter 1 according to the first embodiment. It is obtained. In the present modification, the thickness h2 (see FIG. 8) of the second dielectric layer 104 is 50 μm.

In FIG. 9A, the thickness h1 of the first dielectric layer 102 is set to h1 = 0.04 × λ, 0.08 × λ, 0.12 × λ, 0.16 × λ, 0.20 × λ. , 0.24 × λ, 0.28 × λ, 0.32 × λ, 0.36 × λ, and 0.40 × λ are graphs showing the reflection characteristics of the converter 1 obtained as shown in FIG. (B) is a graph which shows the transmission characteristic of the converter 1 obtained at this time. FIG. 9C is a graph showing the h1 / λ dependence of the worst value (maximum value) of | S11 | in the band of 50 GHz to 70 GHz. FIG. 9D shows | S21 in the same band. It is a graph which shows h1 / λ dependence of the worst value (minimum value) of |. Here, λ is a wavelength corresponding to 60 GHz, and λ = 60 GHz / 3.0 × 10 ⁸ [m / sec] (speed of light) = 5 mm.

  Referring to FIG. 9C, it can be seen that if 0.04 ≦ h1 / λ ≦ 0.14 is satisfied, the worst value (maximum value) of | S11 | can be approximately −6 dB or less. In addition, referring to FIG. 9D, it can be seen that the worst value (minimum value) of | S21 | can be increased to approximately −3 dB or more if 0.04 ≦ h1 / λ ≦ 0.14 is satisfied. That is, as long as 0.04 ≦ h1 / λ ≦ 0.14 is satisfied, as in the converter 1 (h1 / λ = 0.1) according to the first embodiment, the conversion has excellent reflection characteristics and transmission characteristics. It can be seen that the vessel can be realized. This is because when the thickness h1 of the first dielectric layer 102 is 0.04 ≦ h1 / λ ≦ 0.14, multiple reflections can be effectively generated in the first dielectric layer 102. This is probably because of this.

[Modification 2]
A second modification of the converter 1 according to the first embodiment will be described with reference to FIGS.

  The converter 1 according to this modification is obtained by changing the thickness h2 (see FIG. 8) of the second dielectric layer 104 constituting the microstrip line 13 in the converter 1 according to the first embodiment. It is what was done. In the present modification, the thickness h1 (see FIG. 8) of the first dielectric layer 102 is 500 μm.

  FIG. 10A shows the thickness h2 of the second dielectric layer 104 as h2 = 0.02 × h1, 0.05 × h1, 0.15 × h1, 0.20 × h1, 0.25 × h1. , 0.30 × h1, 0.35 × h1, and 0.40 × h1 are graphs showing the reflection characteristics of the converter 1, and FIG. 10 (b) shows the converter obtained at this time. 1 is a graph showing transmission characteristics of 1; FIG. 10C is a graph showing the h2 / h1 dependence of the worst value (maximum value) of | S11 | in the band of 50 GHz to 70 GHz, and FIG. 10D shows | S21 in the same band. It is a graph which shows h2 / h1 dependence of the worst value (minimum value) of |.

  Referring to FIG. 10C, it can be seen that the worst value (maximum value) of | S11 | can be reduced to approximately −6 dB or less if 0.05 ≦ h2 / h1 ≦ 0.15 is satisfied. In addition, referring to FIG. 10 (d), it can be seen that the worst value (minimum value) of | S21 | can be approximately −3 dB or more if 0.05 ≦ h2 / h1 ≦ 0.15 is satisfied. That is, as long as 0.05 ≦ h2 / h1 ≦ 0.15 is satisfied, the conversion is excellent in reflection characteristics and transmission characteristics as in the case of the converter 1 (h2 / h1 = 0.1) according to the first embodiment. It can be seen that the vessel can be realized. This is because when the thickness h2 of the second dielectric layer 104 is 0.05 ≦ h2 / h1 ≦ 0.15, the impedance of the microstrip line 13 is effectively matched with the impedance of the post wall waveguide 12. This is considered to be possible.

[Modification 3]
A third modification of the converter 1 according to the first embodiment will be described with reference to FIGS.

  The converter 1 according to the present modification is the length of a side perpendicular to the strip conductor 105 among the sides of the opening 101a formed in the first planar conductor 101 in the converter 1 according to the first embodiment. This is obtained by changing Wap0 (see FIG. 11). In this modification, the length Lap0 (see FIG. 11) of the side parallel to the strip conductor 105 among the sides of the opening 101a is 1300 μm.

  FIG. 12A shows the length Wap0 of the side of the opening 101a perpendicular to the strip-shaped conductor 105, Wap0 = 0.77 × Lap0, 1.15 × Lap0, 1.92 × Lap0, 2.31. FIG. 12B is a graph showing the reflection characteristic of the converter 1 obtained when × Lap0, 2.69 × Lap0, and FIG. 12B is a graph showing the transmission characteristic of the converter 1 obtained at this time. FIG. 12C is a graph showing the Wap0 / Lap0 dependence of the worst value (maximum value) of | S11 | in the band of 50 GHz or more and 70 GHz or less, and FIG. It is a graph which shows Wap0 / Lap0 dependence of the worst value (minimum value) of |.

  Referring to FIG. 12C, it can be seen that the worst value (maximum value) of | S11 | can be reduced to approximately −6 dB or less if 1.6 ≦ Wap0 / Lap0 is satisfied. Referring to FIG. 12D, it can be seen that if 1.6 ≦ Wap0 / Lap0 is satisfied, the worst value (minimum value) of | S21 | can be approximately −3 dB or more. That is, as long as 1.6 ≦ Wap0 / Lap0 is satisfied, a converter having excellent reflection characteristics and transmission characteristics can be realized as in the case of the converter 1 according to the first embodiment (Wap0 / Lap0 = 2.0). I understand.

[Modification 4]
A fourth modification of the converter 1 according to the first embodiment will be described with reference to FIGS.

  The converter 1 according to this modification is the length of the side perpendicular to the strip conductor 105 among the sides of the opening 103a formed in the second planar conductor 103 in the converter 1 according to the first embodiment. This is obtained by changing Wap1 (see FIG. 13). In this modification, the length Lap1 (see FIG. 13) of the side parallel to the strip conductor 105 among the sides of the opening 103a is 1400 μm.

  FIG. 14A shows the length Wap1 of the side of the opening 103a perpendicular to the strip-shaped conductor 105, Wap1 = 0.43 × Lap1, 0.57 × Lap1, 0.86 × Lap1, 1.00. × Lap1, 1.14 × Lap1, 1.29 × Lap1, 1.43 × Lap1, 1.57 × Lap1, 1.71 × Lap1, 1.86 × Lap1, 2.00 × Lap1, 2.14 × Lap1 FIG. 14B is a graph showing the transmission characteristics of the converter 1 obtained at this time. FIG. 14C is a graph showing the Wap1 / Lap1 dependence of the worst value (maximum value) of | S11 | in the band of 50 GHz or more and 70 GHz or less, and FIG. 14D shows | S21 in the same band. It is a graph which shows Wap1 / Lap1 dependence of the worst value (minimum value) of |.

  Referring to FIG. 14C, it can be seen that if 0.95 ≦ Wap1 / Lap1 ≦ 1.4 is satisfied, the worst value (maximum value) of | S11 | can be approximately −6 dB or less. Further, referring to FIG. 14D, it can be seen that the worst value (minimum value) of | S21 | can be increased to approximately −3 dB or more if 0.9 ≦ Wap1 / Lap1 ≦ 1.25 is satisfied. That is, as long as 0.95 ≦ Wap1 / Lap1 ≦ 1.25 is satisfied, as in the converter 1 (Wap1 / Lap1 = 1.14) according to the first embodiment, the conversion has excellent reflection characteristics and transmission characteristics. It can be seen that the vessel can be realized.

[Modification 5]
A fifth modification of the converter 1 according to the first embodiment will be described with reference to FIGS. 15 and 16.

  The converter 1 according to this modification is obtained by changing the offset δmsl (see FIG. 15) from the reference position of the strip conductor 105 in the converter 1 according to the first embodiment. In this modification, the position passing through the tube axis L of the waveguide 11 is set as the reference position of the strip conductor 105.

  FIG. 16A shows the offset δmsl from the reference position of the strip conductor 105, where δmsl = 0 × Wwg, 0.03 × Wwg, 0.08 × Wwg, 0.11 × Wwg, 0.13 × Wwg, 0 .16 × Wwg, 0.19 × Wwg, 0.21 × Wwg is a graph showing the reflection characteristics of the converter 1 obtained, and FIG. 16B shows the converter 1 obtained at this time. It is a graph which shows a transmission characteristic. FIG. 16C is a graph showing the δmsl / Wwg dependence of the worst value (maximum value) of | S11 | in the band of 50 GHz or more and 70 GHz or less, and FIG. It is a graph which shows (delta) msl / Wwg dependence of the worst value (minimum value) of |. Here, Wwg is 3760 mm of the inner diameter of the rectangular waveguide WR-15 (inner diameter in the direction perpendicular to the extending direction of the strip conductor 105).

  Referring to FIG. 16 (c), it can be seen that the worst value (maximum value) of | S11 | can be reduced to approximately −6 dB or less if 0 ≦ δmsl / Wwg ≦ 0.125 is satisfied. Further, referring to FIG. 16D, it can be seen that the worst value (minimum value) of | S21 | can be increased to approximately −3 dB or more if 0 ≦ δmsl / Wwg ≦ 0.12. That is, as long as 0 ≦ δmsl / Wwg ≦ 0.12 is satisfied, a converter having excellent reflection characteristics and transmission characteristics can be realized as in the case of the converter 1 according to the first embodiment (δmsl / Wwg = 0). I understand.

[Modification 6]
A sixth modification of the converter 1 according to the first embodiment will be described with reference to FIGS. 17 and 18.

  The converter 1 according to this modification is obtained by changing the width Wmsl (see FIG. 17) of the strip conductor 105 in the converter 1 according to the first embodiment.

  FIG. 18A shows the case where the width Wmsl of the strip-shaped conductor 105 is Wmsl = 0.02 × λ, 0.04 × λ, 0.06 × λ, 0.08 × λ, 0.10 × λ. FIG. 18B is a graph showing the transmission characteristics of the converter 1 obtained at this time. FIG. 18C is a graph showing the Wmsl / λ dependency of the worst value (maximum value) of | S11 | in the band of 50 GHz or more and 70 GHz or less, and FIG. 18D shows | S21 in the same band. It is a graph which shows the Wmsl / λ dependence of the worst value (minimum value) of |. Here, λ is a wavelength of 5 mm corresponding to 60 GHz.

  Referring to FIG. 18C, it can be seen that the worst value (maximum value) of | S11 | can be reduced to approximately −6 dB or less if 0 ≦ Wmsl / λ ≦ 0.04 is satisfied. In addition, referring to FIG. 18D, it can be seen that if 0 ≦ Wmsl / λ ≦ 0.06 is satisfied, the worst value (minimum value) of | S21 | That is, if 0 ≦ Wmsl / λ ≦ 0.04 is satisfied, a converter having excellent reflection characteristics and transmission characteristics can be obtained as in the case of the converter 1 according to the first embodiment (Wmsl / λ = 0.02). It can be seen that it can be realized.

[Modification 7]
A seventh modification of the converter 1 according to the first embodiment will be described with reference to FIGS. 19 and 20.

  The converter 1 according to this modification is obtained by changing the length Lbcsh (see FIG. 19) in the y-axis direction of the first portion 14a1 of the back short block 14 in the converter 1 according to the first embodiment. It is obtained. In this modification, the length Wbcsh (see FIG. 19) in the x-axis direction of the second portion 14a2 in the back short block 14 is 3.86 mm.

  FIG. 20A shows the case where the length Lbcsh in the y-axis direction of the first portion 14a1 is Lbcsh = 0.25 × Wbcsh, 0.31 × Wbcsh, 0.41 × Wbcsh, 0.46 × Wbcsh FIG. 20B is a graph showing the transmission characteristics of the converter 1 obtained at this time. FIG. 20C is a graph showing the Lbcsh / Wbcsh dependence of the worst value (maximum value) of | S11 | in the band of 50 GHz or more and 70 GHz or less, and FIG. 20D is | S21 in the band. It is a graph which shows Lbcsh / Wbcsh dependence of the worst value (minimum value) of |.

  Referring to FIG. 20C, it can be seen that the worst value (maximum value) of | S11 | can be approximately −6 dB or less regardless of the value of Lbcsh / Wbcsh in the illustrated range. Also, referring to FIG. 20D, if 0.275 ≦ Lbcsh / Wbcsh ≦ 0.375 or 0.44 ≦ Lbcsh / Wbcsh is satisfied, the worst value (minimum value) of | S21 | is approximately −3 dB. It turns out that it can do it above. That is, if 0.275 ≦ Lbcsh / Wbcsh ≦ 0.375 or 0.44 ≦ Lbcsh / Wbcsh is satisfied, the reflection is the same as in the converter 1 (Lbcsh / Wbcsh = 0.36) according to the first embodiment. It can be seen that a converter having excellent characteristics and transmission characteristics can be realized.

[Modification 8]
An eighth modification of the converter 1 according to the first embodiment will be described with reference to FIGS.

  The converter 1 according to this modification is obtained by changing the width Wvoid (see FIG. 21) in the x-axis direction of the first portion 14a1 of the back short block 14 in the converter 1 according to the first embodiment. It is what was done. In this modification, the length Wbcsh (see FIG. 21) in the x-axis direction of the second portion 14a2 of the back short block 14 is 3.86 mm.

  FIG. 22A shows the width Wvoid in the x-axis direction of the first portion 14a1 as Wvoid = 0.26 × Wbcsh, 0.28 × Wbcsh, 0.31 × Wbcsh, 0.34 × Wbcsh, 0.36. FIG. 22B is a graph showing the reflection characteristics of the converter 1 obtained when × Wbcsh, 0.39 × Wbcsh, 0.41 × Wbcsh, 0.44 × Wbcsh, and 0.47 × Wbcsh. It is a graph which shows the transmission characteristic of the converter 1 obtained at this time. FIG. 22C is a graph showing the Wvoid / Wbcsh dependence of the worst value (maximum value) of | S11 | in the band of 50 GHz to 70 GHz. FIG. 22D is a graph showing | S21 in the same band. It is a graph which shows Wvoid / Wbcsh dependence of the worst value (minimum value) of |.

  Referring to FIG. 22 (c), it can be seen that if 0.32 ≦ Wvoid / Wbcsh is satisfied, the worst value (maximum value) of | S11 | can be approximately −6 dB or less. In addition, referring to FIG. 22D, it can be seen that the worst value (minimum value) of | S21 | can be increased to approximately −3 dB or more if 0.43 ≦ Wvoid / Wbcsh is satisfied. That is, as long as 0.43 ≦ Wvoid / Wbcsh is satisfied, a converter having excellent reflection characteristics and transmission characteristics can be realized as in the case of the converter 1 according to the first embodiment (Wvoid / Wbcsh = 0.48). I understand.

[Modification 9]
A ninth modification of the converter 1 according to the first embodiment will be described with reference to FIGS.

  In the converter 1 according to this modification, in the converter 1 according to the first embodiment, the shape of the recess 14a in the back short block 14 is changed from a T shape (see FIG. 23A) to an I shape (FIG. 23). (B)).

  FIG. 24A shows the reflection characteristic of the converter 1 according to the first embodiment (shown by a broken line in the figure) and the reflection characteristic of the converter 1 according to this modification (shown by a solid line in the figure). FIG. 24B is a graph showing the transmission characteristics of the converter 1 according to the first embodiment (indicated by a broken line in the figure) and the transmission characteristics of the converter 1 according to this modification (FIG. 24B). It is a graph which shows a solid line in the inside.

  Referring to FIG. 24A, it can be seen that also in the converter 1 according to this modification, the worst value (maximum value) of | S11 | Further, referring to FIG. 24B, it can be seen that the worst value (minimum value) of | S21 | can be set to −3 dB or more also in the converter 1 according to this modification. That is, it can be seen that the converter 1 according to the present modification can also realize a converter having excellent reflection characteristics and transmission characteristics, similar to the converter 1 according to the first embodiment.

  However, in the graph shown in FIG. 24A, when the bandwidths of the frequency bands where | S11 | is −6 dB or less are compared, the bandwidth of the converter 1 according to the first embodiment is the present modification. It is wider than the bandwidth of the converter 1. Further, in FIG. 24B, when the bandwidths of the frequency bands in which | S21 | is −3 dB or more are compared, the bandwidth of the converter 1 according to the first embodiment is the converter according to the present modification. It is wider than 1 bandwidth. That is, by forming the concave portion 14a formed in the back short block 14 into a T shape, a band where | S11 | is equal to or less than a design target value (specifically −6 dB), and | S21 | Specifically, it can be seen that the bandwidth of −3 dB or more can be expanded.

[Example 2]
A second example of the converter 1 according to this embodiment will be described with reference to FIGS.

  The converter 1 according to the present embodiment is configured by configuring each part of the converter 1 shown in FIG. 1 as follows, and uses the 60 GHz band as an operating band. As will be apparent from the following description, the converter 1 according to this embodiment is different from the converter 1 according to the first embodiment mainly in the diameters of the conductor post 102ai and the conductor post 104ai.

  Waveguide 11: As the waveguide 11, a rectangular waveguide WR-15 (EIA standard) was used.

  First planar conductor 101: A conductor (specifically copper) pattern having the shape shown in FIG. 25 is formed on the lower surface of the first dielectric layer 102, and this is used as the first planar conductor 101. .

  First dielectric layer 102: As the first dielectric layer 102, a liquid crystal polymer substrate having a dielectric constant of 3, a dielectric loss tangent of 0.003, and a thickness of 500 μm was used.

  Second planar conductor 103: A conductor (specifically copper) pattern having the shape shown in FIG. 26 is formed on the lower surface of the second dielectric layer 104, and this is used as the second planar conductor 103. .

  Second dielectric layer 104: As the second dielectric layer 104, a liquid crystal polymer substrate having a dielectric constant of 3, a dielectric loss tangent of 0.003, and a thickness of 50 μm was used.

  Band-shaped conductor 105 and C-shaped conductor 106: A conductor (specifically copper) pattern having the shape shown in FIG. 27 is formed on the upper surface of the second dielectric layer 104, and this is formed into the band-shaped conductor 105 and the C-shaped conductor. Used as 106.

  Conductor post 102ai and conductor post 104ai: A through via having a diameter of 200 μm penetrating both layers is formed on a multilayer substrate including the first dielectric layer 102 and the second dielectric layer 104, and this is formed into the conductor post 102a1 and the conductor post 102a1. Used as 104a1 (see FIG. 2). In addition, a blind via having a diameter of 200 μm penetrating only the first dielectric layer 102 is formed on the multilayer substrate including the first dielectric layer 102 and the second dielectric layer 104, and this is used as the conductor post 102a2. (See FIG. 2). The distance between the central axes of the two conductor posts 102ai and 102aj adjacent to each other and the distance between the central axes of the two conductor posts 104ai and 104aj adjacent to each other were 400 μm.

  Back short block 14: As the back short block 14, an aluminum block formed with a recess 14a having the shape shown in FIG.

  FIG. 29 is a graph showing the reflection characteristic (shown by a broken line in the figure) and the transmission characteristic (shown by a solid line in the figure) of the converter 1 according to this example.

  Referring to FIG. 29, it can be seen that | S11 | is less than −6 dB at all frequencies from 50 GHz to 68 GHz. Also, referring to FIG. 29, it can be seen that | S21 | exceeds -3 dB at all frequencies from 50 GHz to 70 GHz.

Example 3
A third example of the converter 1 according to this embodiment will be described with reference to FIG.

  In the converter 1 according to the present embodiment, an integrated circuit 16 such as an RFIC (Radio Frequency Integral Circuit) is connected to a strip-like conductor 105 constituting the microstrip line 13, and a protective cover 15 integrally formed with the back short block 14 is used. The integrated circuit 16 is covered. A heat sink 17 is added to the back surface of the post-type waveguide 12. About the dimension of each part, you may employ | adopt what was shown in any of Example 1, Modifications 1-10, and Modification 2. FIG.

  In the converter 1 according to the present embodiment, by providing the protective cover 15, it is possible to avoid contact with other members that may result in damage to the integrated circuit 16. Further, by providing the heat sink, the heat generated in the integrated circuit 16 can be efficiently dissipated.

[Additional Notes]
The present invention is not limited to the above-described embodiments, and various modifications are possible within the scope shown in the claims, and embodiments obtained by appropriately combining technical means disclosed in different embodiments. Is also included in the technical scope of the present invention.

  The present invention can be used, for example, in a high-frequency circuit that processes a high-frequency signal belonging to the millimeter wave band.

DESCRIPTION OF SYMBOLS 1 Converter 11 Waveguide 11a Cavity 12 Post wall waveguide 13 Microstrip line 14 Back short block 14a Recess 14a1 1st part 14a2 2nd part 15 Protective cover 101 1st planar conductor 101a Opening (1st Opening)
102 first dielectric layer 102a post wall 102ai conductor post 102b waveguide region 103 second planar conductor 103a opening (second opening)
104 Second dielectric layer 104a Post wall 104ai Conductor post 105 Strip conductor 106 C-shaped conductor

Claims (11)

A waveguide;
A post composed of a first dielectric layer having a post wall waveguide formed therein, and a first planar conductor and a second planar conductor facing each other through the first dielectric layer. A wall waveguide, a post wall waveguide connected to the waveguide via a first opening formed in the first planar conductor;
A microstrip line composed of a second dielectric layer and the second planar conductor and the strip conductor facing each other through the second dielectric layer, wherein the second planar layer A microstrip line connected to the post wall waveguide through a second opening formed in the conductor, and
The area of the first opening is larger than the area of the second opening,
A converter characterized by that. Assuming that the center frequency of the operation band of the converter is f [Hz] and the wavelength corresponding to the center frequency is λ = c / f [m] (c is the speed of light), the thickness h1 of the first dielectric layer is 0.04 ≦ h1 / λ ≦ 0.14 is satisfied.
The converter according to claim 1. The thickness h2 of the second dielectric layer satisfies 0.05 ≦ h2 / h1 ≦ 0.15.
The converter according to claim 1 or 2, characterized by the above-mentioned. A conductor block that covers the tip of the strip conductor;
The direction from the base of the strip conductor to the tip is the positive y-axis direction, and the direction from the strip conductor to the second planar conductor is the z-axis negative direction among the directions orthogonal to the positive y-axis direction. In the Cartesian coordinate system (right-handed system), the conductor block is a recess that opens in the negative y-axis direction and the negative z-axis direction, and extends from the side surface on the negative y-axis side of the conductive block in the positive y-axis direction. A rectangular parallelepiped first portion dug and a rectangular parallelepiped second portion dug from the tip of the first portion in the positive x-axis direction and negative x-axis direction. A concave portion is formed,
The converter of any one of Claims 1-3 characterized by the above-mentioned. The length in the x-axis direction of the second part is Wbcsh, and the width Wvoid in the x-axis direction of the first part satisfies 0.43 ≦ Wvoid / Wbcsh.
The converter according to claim 4. The length Lbcsh in the y-axis direction of the first portion is 0.275 ≦ Lbcsh / Wbcsh ≦ 0.375 or 0.44 ≦ Lbcsh / Wbcsh where the length in the x-axis direction of the second portion is Wbcsh. Meet,
6. The converter according to claim 4 or 5, characterized in that The first opening is a rectangle having a side parallel to a direction in which the strip conductor extends and a side perpendicular to the extending direction,
The length of the side of the first opening parallel to the strip conductor is Lap0, and the length of the side of the first opening perpendicular to the strip conductor Wap0 satisfies 1.6 ≦ Wap0 / Lap0.
The converter of any one of Claims 1-6 characterized by the above-mentioned. The second opening is a rectangle having a side parallel to a direction in which the strip conductor extends and a side perpendicular to the extending direction,
The length of the side of the second opening parallel to the strip conductor is Lap1, and the length of the side of the second opening perpendicular to the strip conductor Wap1 is 0.95 ≦ Wap1 / Lap1 ≦ 1.25. Meet,
The converter according to any one of claims 1 to 7, characterized by that. The offset δmsl from the reference position of the strip conductor is defined as Wwg, where the position passing through the tube axis of the waveguide is the reference position, and the inner diameter in the direction perpendicular to the extending direction of the strip conductor of the waveguide is Wwg. Satisfies 0 ≦ δmsl / Wwg ≦ 0.12.
The converter according to any one of claims 1 to 8, characterized in that: When the width of the strip conductor is Wmsl, 0 <Wmsl ≦ 0.04 is satisfied.
The converter according to any one of claims 1 to 9, wherein   A waveguide;
  A post composed of a first dielectric layer having a post wall waveguide formed therein, and a first planar conductor and a second planar conductor facing each other through the first dielectric layer. A wall waveguide, a post wall waveguide connected to the waveguide via a first opening formed in the first planar conductor;
  A microstrip line composed of a second dielectric layer and the second planar conductor and the strip conductor facing each other through the second dielectric layer, wherein the second planar layer A microstrip line connected to the post wall waveguide through a second opening formed in the conductor, and
  Assuming that the center frequency of the operation band of the converter is f [Hz] and the wavelength corresponding to the center frequency is λ = c / f [m] (c is the speed of light), the thickness h1 of the first dielectric layer is 0.04 ≦ h1 / λ ≦ 0.12 is satisfied.
A converter characterized by that.

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