JP5636839B2 - Radiation-sensitive resin composition, interlayer insulating film, method for forming interlayer insulating film, and display element - Google Patents
Radiation-sensitive resin composition, interlayer insulating film, method for forming interlayer insulating film, and display element Download PDFInfo
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- JP5636839B2 JP5636839B2 JP2010208495A JP2010208495A JP5636839B2 JP 5636839 B2 JP5636839 B2 JP 5636839B2 JP 2010208495 A JP2010208495 A JP 2010208495A JP 2010208495 A JP2010208495 A JP 2010208495A JP 5636839 B2 JP5636839 B2 JP 5636839B2
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- acrylate
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- 230000005855 radiation Effects 0.000 title description 56
- 239000011229 interlayer Substances 0.000 title description 55
- 238000000034 method Methods 0.000 title description 32
- 239000011342 resin composition Substances 0.000 title description 21
- 239000010408 film Substances 0.000 description 106
- 150000001875 compounds Chemical class 0.000 description 85
- 229920001577 copolymer Polymers 0.000 description 54
- -1 3,4-epoxycyclohexylmethyl Chemical group 0.000 description 47
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 45
- 239000000203 mixture Substances 0.000 description 40
- 239000000243 solution Substances 0.000 description 36
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 34
- 230000015572 biosynthetic process Effects 0.000 description 31
- 239000000758 substrate Substances 0.000 description 29
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 28
- 238000003786 synthesis reaction Methods 0.000 description 28
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 25
- 238000000576 coating method Methods 0.000 description 23
- 239000003960 organic solvent Substances 0.000 description 21
- 239000003505 polymerization initiator Substances 0.000 description 21
- 239000007787 solid Substances 0.000 description 19
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 18
- 239000011248 coating agent Substances 0.000 description 17
- 239000004094 surface-active agent Substances 0.000 description 17
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 16
- 229920000642 polymer Polymers 0.000 description 16
- WYGWHHGCAGTUCH-UHFFFAOYSA-N 2-[(2-cyano-4-methylpentan-2-yl)diazenyl]-2,4-dimethylpentanenitrile Chemical compound CC(C)CC(C)(C#N)N=NC(C)(C#N)CC(C)C WYGWHHGCAGTUCH-UHFFFAOYSA-N 0.000 description 15
- 239000004973 liquid crystal related substance Substances 0.000 description 15
- BDJSOPWXYLFTNW-UHFFFAOYSA-N methyl 3-methoxypropanoate Chemical compound COCCC(=O)OC BDJSOPWXYLFTNW-UHFFFAOYSA-N 0.000 description 15
- 229910052757 nitrogen Inorganic materials 0.000 description 15
- 230000035945 sensitivity Effects 0.000 description 15
- 238000004458 analytical method Methods 0.000 description 14
- FZYCEURIEDTWNS-UHFFFAOYSA-N prop-1-en-2-ylbenzene Chemical compound CC(=C)C1=CC=CC=C1.CC(=C)C1=CC=CC=C1 FZYCEURIEDTWNS-UHFFFAOYSA-N 0.000 description 14
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 13
- 238000003756 stirring Methods 0.000 description 13
- SUPCQIBBMFXVTL-UHFFFAOYSA-N ethyl 2-methylprop-2-enoate Chemical compound CCOC(=O)C(C)=C SUPCQIBBMFXVTL-UHFFFAOYSA-N 0.000 description 11
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 description 11
- 238000006116 polymerization reaction Methods 0.000 description 11
- 239000002904 solvent Substances 0.000 description 11
- 238000009413 insulation Methods 0.000 description 10
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 8
- 150000005215 alkyl ethers Chemical class 0.000 description 8
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 8
- 238000010926 purge Methods 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 7
- 239000003112 inhibitor Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- FUGYGGDSWSUORM-UHFFFAOYSA-N 4-hydroxystyrene Chemical compound OC1=CC=C(C=C)C=C1 FUGYGGDSWSUORM-UHFFFAOYSA-N 0.000 description 6
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 229920001296 polysiloxane Polymers 0.000 description 6
- LWRBVKNFOYUCNP-UHFFFAOYSA-N 2-methyl-1-(4-methylsulfanylphenyl)-2-morpholin-4-ylpropan-1-one Chemical compound C1=CC(SC)=CC=C1C(=O)C(C)(C)N1CCOCC1 LWRBVKNFOYUCNP-UHFFFAOYSA-N 0.000 description 5
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 5
- 150000001244 carboxylic acid anhydrides Chemical class 0.000 description 5
- 150000002148 esters Chemical class 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- FDSUVTROAWLVJA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol;prop-2-enoic acid Chemical class OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OCC(CO)(CO)COCC(CO)(CO)CO FDSUVTROAWLVJA-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 4
- MPIAGWXWVAHQBB-UHFFFAOYSA-N [3-prop-2-enoyloxy-2-[[3-prop-2-enoyloxy-2,2-bis(prop-2-enoyloxymethyl)propoxy]methyl]-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(COC(=O)C=C)(COC(=O)C=C)COCC(COC(=O)C=C)(COC(=O)C=C)COC(=O)C=C MPIAGWXWVAHQBB-UHFFFAOYSA-N 0.000 description 4
- 125000000217 alkyl group Chemical group 0.000 description 4
- XYLMUPLGERFSHI-UHFFFAOYSA-N alpha-Methylstyrene Chemical compound CC(=C)C1=CC=CC=C1 XYLMUPLGERFSHI-UHFFFAOYSA-N 0.000 description 4
- 125000004432 carbon atom Chemical group C* 0.000 description 4
- 229940125904 compound 1 Drugs 0.000 description 4
- 210000002858 crystal cell Anatomy 0.000 description 4
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 4
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 4
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- NWVVVBRKAWDGAB-UHFFFAOYSA-N p-methoxyphenol Chemical compound COC1=CC=C(O)C=C1 NWVVVBRKAWDGAB-UHFFFAOYSA-N 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 3
- HIDBROSJWZYGSZ-UHFFFAOYSA-N 1-phenylpyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C1=CC=CC=C1 HIDBROSJWZYGSZ-UHFFFAOYSA-N 0.000 description 3
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- JLBJTVDPSNHSKJ-UHFFFAOYSA-N 4-Methylstyrene Chemical compound CC1=CC=C(C=C)C=C1 JLBJTVDPSNHSKJ-UHFFFAOYSA-N 0.000 description 3
- WVDDGKGOMKODPV-UHFFFAOYSA-N Benzyl alcohol Chemical compound OCC1=CC=CC=C1 WVDDGKGOMKODPV-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- DAKWPKUUDNSNPN-UHFFFAOYSA-N Trimethylolpropane triacrylate Chemical compound C=CC(=O)OCC(CC)(COC(=O)C=C)COC(=O)C=C DAKWPKUUDNSNPN-UHFFFAOYSA-N 0.000 description 3
- HVVWZTWDBSEWIH-UHFFFAOYSA-N [2-(hydroxymethyl)-3-prop-2-enoyloxy-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical class C=CC(=O)OCC(CO)(COC(=O)C=C)COC(=O)C=C HVVWZTWDBSEWIH-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 125000003700 epoxy group Chemical group 0.000 description 3
- IJUHLFUALMUWOM-UHFFFAOYSA-N ethyl 3-methoxypropanoate Chemical compound CCOC(=O)CCOC IJUHLFUALMUWOM-UHFFFAOYSA-N 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 3
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 3
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 3
- 150000002978 peroxides Chemical class 0.000 description 3
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 239000007870 radical polymerization initiator Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 3
- QYGBYAQGBVHMDD-XQRVVYSFSA-N (z)-2-cyano-3-thiophen-2-ylprop-2-enoic acid Chemical compound OC(=O)C(\C#N)=C/C1=CC=CS1 QYGBYAQGBVHMDD-XQRVVYSFSA-N 0.000 description 2
- MYWOJODOMFBVCB-UHFFFAOYSA-N 1,2,6-trimethylphenanthrene Chemical compound CC1=CC=C2C3=CC(C)=CC=C3C=CC2=C1C MYWOJODOMFBVCB-UHFFFAOYSA-N 0.000 description 2
- PMBXCGGQNSVESQ-UHFFFAOYSA-N 1-Hexanethiol Chemical compound CCCCCCS PMBXCGGQNSVESQ-UHFFFAOYSA-N 0.000 description 2
- BQTPKSBXMONSJI-UHFFFAOYSA-N 1-cyclohexylpyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C1CCCCC1 BQTPKSBXMONSJI-UHFFFAOYSA-N 0.000 description 2
- CNJRPYFBORAQAU-UHFFFAOYSA-N 1-ethoxy-2-(2-methoxyethoxy)ethane Chemical compound CCOCCOCCOC CNJRPYFBORAQAU-UHFFFAOYSA-N 0.000 description 2
- 238000001644 13C nuclear magnetic resonance spectroscopy Methods 0.000 description 2
- JKQRNTIBBOTABS-UHFFFAOYSA-N 2-(2,4-dichlorophenyl)-1-[2-(2,4-dichlorophenyl)-4,5-diphenylimidazol-2-yl]-4,5-diphenylimidazole Chemical compound ClC1=CC(Cl)=CC=C1C(N1C2(N=C(C(=N2)C=2C=CC=CC=2)C=2C=CC=CC=2)C=2C(=CC(Cl)=CC=2)Cl)=NC(C=2C=CC=CC=2)=C1C1=CC=CC=C1 JKQRNTIBBOTABS-UHFFFAOYSA-N 0.000 description 2
- URQQDYIVGXOEDA-UHFFFAOYSA-N 2-(2-ethenoxyethoxy)ethyl prop-2-enoate Chemical compound C=COCCOCCOC(=O)C=C URQQDYIVGXOEDA-UHFFFAOYSA-N 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 2
- PUBNJSZGANKUGX-UHFFFAOYSA-N 2-(dimethylamino)-2-[(4-methylphenyl)methyl]-1-(4-morpholin-4-ylphenyl)butan-1-one Chemical compound C=1C=C(N2CCOCC2)C=CC=1C(=O)C(CC)(N(C)C)CC1=CC=C(C)C=C1 PUBNJSZGANKUGX-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 2
- UHFFVFAKEGKNAQ-UHFFFAOYSA-N 2-benzyl-2-(dimethylamino)-1-(4-morpholin-4-ylphenyl)butan-1-one Chemical compound C=1C=C(N2CCOCC2)C=CC=1C(=O)C(CC)(N(C)C)CC1=CC=CC=C1 UHFFVFAKEGKNAQ-UHFFFAOYSA-N 0.000 description 2
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- FFWSICBKRCICMR-UHFFFAOYSA-N 5-methyl-2-hexanone Chemical compound CC(C)CCC(C)=O FFWSICBKRCICMR-UHFFFAOYSA-N 0.000 description 2
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- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
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- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 2
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 2
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- RVIDFGAZNGPDTB-UHFFFAOYSA-N oxetane;prop-2-enoic acid Chemical compound C1COC1.OC(=O)C=C RVIDFGAZNGPDTB-UHFFFAOYSA-N 0.000 description 2
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 2
- 125000005010 perfluoroalkyl group Chemical group 0.000 description 2
- 125000003356 phenylsulfanyl group Chemical group [*]SC1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 description 2
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- HJUGFYREWKUQJT-UHFFFAOYSA-N tetrabromomethane Chemical compound BrC(Br)(Br)Br HJUGFYREWKUQJT-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- CWERGRDVMFNCDR-UHFFFAOYSA-N thioglycolic acid Chemical compound OC(=O)CS CWERGRDVMFNCDR-UHFFFAOYSA-N 0.000 description 2
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- VVMSDAAZTROUPZ-UHFFFAOYSA-N (3-ethyloxetan-2-yl)methyl prop-2-enoate Chemical compound CCC1COC1COC(=O)C=C VVMSDAAZTROUPZ-UHFFFAOYSA-N 0.000 description 1
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- 239000007924 injection Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- QBVBLLGAMALJGB-UHFFFAOYSA-N methyl 2-butoxypropanoate Chemical compound CCCCOC(C)C(=O)OC QBVBLLGAMALJGB-UHFFFAOYSA-N 0.000 description 1
- HSDFKDZBJMDHFF-UHFFFAOYSA-N methyl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OC HSDFKDZBJMDHFF-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 229940057867 methyl lactate Drugs 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- GSGDTSDELPUTKU-UHFFFAOYSA-N nonoxybenzene Chemical compound CCCCCCCCCOC1=CC=CC=C1 GSGDTSDELPUTKU-UHFFFAOYSA-N 0.000 description 1
- ZWWQICJTBOCQLA-UHFFFAOYSA-N o-propan-2-yl (propan-2-yloxycarbothioyldisulfanyl)methanethioate Chemical compound CC(C)OC(=S)SSC(=S)OC(C)C ZWWQICJTBOCQLA-UHFFFAOYSA-N 0.000 description 1
- KZCOBXFFBQJQHH-UHFFFAOYSA-N octane-1-thiol Chemical compound CCCCCCCCS KZCOBXFFBQJQHH-UHFFFAOYSA-N 0.000 description 1
- ZDHCZVWCTKTBRY-UHFFFAOYSA-N omega-Hydroxydodecanoic acid Natural products OCCCCCCCCCCCC(O)=O ZDHCZVWCTKTBRY-UHFFFAOYSA-N 0.000 description 1
- 150000001451 organic peroxides Chemical class 0.000 description 1
- 125000005375 organosiloxane group Chemical group 0.000 description 1
- 125000000466 oxiranyl group Chemical group 0.000 description 1
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920001707 polybutylene terephthalate Polymers 0.000 description 1
- 229920001610 polycaprolactone Polymers 0.000 description 1
- 239000004632 polycaprolactone Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000259 polyoxyethylene lauryl ether Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- BOQSSGDQNWEFSX-UHFFFAOYSA-N propan-2-yl 2-methylprop-2-enoate Chemical compound CC(C)OC(=O)C(C)=C BOQSSGDQNWEFSX-UHFFFAOYSA-N 0.000 description 1
- GYOCIFXDRJJHPF-UHFFFAOYSA-N propyl 2-butoxypropanoate Chemical compound CCCCOC(C)C(=O)OCCC GYOCIFXDRJJHPF-UHFFFAOYSA-N 0.000 description 1
- GXKPKHWZTLSCIB-UHFFFAOYSA-N propyl 2-ethoxypropanoate Chemical compound CCCOC(=O)C(C)OCC GXKPKHWZTLSCIB-UHFFFAOYSA-N 0.000 description 1
- ILVGAIQLOCKNQA-UHFFFAOYSA-N propyl 2-hydroxypropanoate Chemical compound CCCOC(=O)C(C)O ILVGAIQLOCKNQA-UHFFFAOYSA-N 0.000 description 1
- JCMFJIHDWDKYIL-UHFFFAOYSA-N propyl 3-methoxypropanoate Chemical compound CCCOC(=O)CCOC JCMFJIHDWDKYIL-UHFFFAOYSA-N 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000005143 pyrolysis gas chromatography mass spectroscopy Methods 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 150000004053 quinones Chemical class 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 239000012966 redox initiator Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000006335 response to radiation Effects 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000010421 standard material Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- OPQYOFWUFGEMRZ-UHFFFAOYSA-N tert-butyl 2,2-dimethylpropaneperoxoate Chemical compound CC(C)(C)OOC(=O)C(C)(C)C OPQYOFWUFGEMRZ-UHFFFAOYSA-N 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- UWHCKJMYHZGTIT-UHFFFAOYSA-N tetraethylene glycol Chemical compound OCCOCCOCCOCCO UWHCKJMYHZGTIT-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- FRGPKMWIYVTFIQ-UHFFFAOYSA-N triethoxy(3-isocyanatopropyl)silane Chemical compound CCO[Si](OCC)(OCC)CCCN=C=O FRGPKMWIYVTFIQ-UHFFFAOYSA-N 0.000 description 1
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Materials For Photolithography (AREA)
- Polymerisation Methods In General (AREA)
- Graft Or Block Polymers (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
本発明は、感放射線性樹脂組成物、層間絶縁膜、層間絶縁膜の形成方法及び表示素子に関する。 The present invention relates to a radiation-sensitive resin composition, an interlayer insulating film, a method for forming an interlayer insulating film, and a display element.
薄膜トランジスタ(TFT)型液晶表示素子等の電子部品は、一般に層状に配置される配線間を絶縁するために層間絶縁膜が設けられている。例えばTFT型液晶表示素子は、層間絶縁膜上に透明電極膜を形成し、さらにその上に液晶配向膜を形成する工程を経て製造される。かかる層間絶縁膜は、透明電極膜の形成工程での高温条件や電極のパターン形成工程でのレジストの剥離液に曝されるため、これらに対する十分な耐性が必要となる。 An electronic component such as a thin film transistor (TFT) type liquid crystal display element is generally provided with an interlayer insulating film for insulating between wirings arranged in layers. For example, a TFT-type liquid crystal display element is manufactured through a process of forming a transparent electrode film on an interlayer insulating film and further forming a liquid crystal alignment film thereon. Since such an interlayer insulating film is exposed to a high temperature condition in the transparent electrode film forming step and a resist stripping solution in the electrode pattern forming step, it needs to have sufficient resistance to these.
従来、層間絶縁膜の形成材料としてはパターンニング性能の観点から感放射線性酸発生剤を用いたポジティブ型感放射線性樹脂組成物が用いられている(特開2001−354822号公報参照)。近年、高感度性、得られる層間絶縁膜の高透明性等の観点からネガティブ型感放射線性樹脂組成物の適用が進んでいる(特開2000−162769号公報参照)。 Conventionally, a positive-type radiation-sensitive resin composition using a radiation-sensitive acid generator has been used as a material for forming an interlayer insulating film from the viewpoint of patterning performance (see JP 2001-354822 A). In recent years, application of negative radiation-sensitive resin compositions has been advanced from the viewpoint of high sensitivity and high transparency of the resulting interlayer insulating film (see Japanese Patent Application Laid-Open No. 2000-162769).
一方、液晶パネルの普及に伴うコスト削減及び工程時間短縮等の観点から、フォトリソグラフィー工程における放射線照射時間の短縮化(高感度化)、高解像度化等が望まれている。しかし、高感度化、高解像度化等を追及した場合、基板との密着性、透明性等の低下を引き起こす不都合がある。 On the other hand, from the viewpoint of cost reduction and process time reduction accompanying the widespread use of liquid crystal panels, reduction of radiation irradiation time (higher sensitivity), higher resolution, and the like in a photolithography process are desired. However, when higher sensitivity, higher resolution, etc. are pursued, there is an inconvenience that causes a decrease in adhesion to the substrate, transparency, and the like.
このような状況から、感度及び解像性に優れる感放射線性樹脂組成物、並びにムラが少なく、透明性、現像密着性、比誘電率等に優れる層間絶縁膜の開発が望まれている。 Under such circumstances, development of a radiation-sensitive resin composition having excellent sensitivity and resolution, and an interlayer insulating film having little unevenness and excellent transparency, development adhesion, relative dielectric constant, and the like are desired.
本発明は、以上のような事情に基づいてなされたものであり、その目的は感度及び解像性に優れる感放射線性樹脂組成物、並びにムラが少なく、透明性、現像密着性、比誘電率等に優れる層間絶縁膜を提供することである。 The present invention has been made on the basis of the circumstances as described above, and the object thereof is a radiation-sensitive resin composition excellent in sensitivity and resolution, and less unevenness, transparency, development adhesion, and dielectric constant. It is to provide an interlayer insulating film excellent in the above.
上記課題を解決するためになされた発明は、
[A]共重合体、
[B]重合性不飽和化合物、
[C]感放射線性重合開始剤、及び
[D]有機溶媒
を含有し、
[A]共重合体が、
(A1)(メタ)アクリル酸及び不飽和カルボン酸無水物からなる群より選択される少なくとも1つの化合物に由来する構造単位(以下、「(A1)構造単位」と称することがある)、
(A2)(メタ)アクリル酸グリシジル、(メタ)アクリル酸3,4−エポキシシクロヘキシルメチル、4−ヒドロキシブチル(メタ)アクリレートグリシジルエーテル及び3−(メタ)アクリロイルオキシメチル−3−エチルオキセタンからなる群より選択される少なくとも1つの化合物に由来する構造単位(以下、「(A2)構造単位」と称することがある)、
(A3)スチレン、α―メチルスチレン、4―メチルスチレン及び4−ヒドロキシスチレンからなる群より選択される少なくとも1つの化合物に由来する構造単位(以下、「(A3)構造単位」と称することがある)、及び
(A4)アクリル酸メチル、(メタ)アクリル酸エチル、(メタ)アクリル酸n−プロピル、(メタ)アクリル酸イソプロピル、(メタ)アクリル酸n−ブチル、(メタ)アクリル酸sec−ブチル、(メタ)アクリル酸イソブチル及び(メタ)アクリル酸tert−ブチルからなる群より選択される少なくとも1つの化合物に由来する構造単位(以下、「(A4)構造単位」と称することがある)
を含み、
[A]共重合体における
(A1)構造単位の含有割合が1モル%以上40モル%以下、
(A2)構造単位の含有割合が1モル%以上15モル%以下、
(A3)構造単位の含有割合が1モル%以上70モル%以下、及び
(A4)構造単位の含有割合が1モル%以上30モル%以下
である感放射線性樹脂組成物である。
The invention made to solve the above problems is
[A] copolymer,
[B] polymerizable unsaturated compound,
[C] a radiation sensitive polymerization initiator, and [D] an organic solvent,
[A] the copolymer is
(A1) a structural unit derived from at least one compound selected from the group consisting of (meth) acrylic acid and unsaturated carboxylic acid anhydride (hereinafter sometimes referred to as “(A1) structural unit”),
(A2) Group consisting of glycidyl (meth) acrylate, 3,4-epoxycyclohexylmethyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate glycidyl ether and 3- (meth) acryloyloxymethyl-3-ethyloxetane A structural unit derived from at least one compound selected from the above (hereinafter sometimes referred to as “(A2) structural unit”),
(A3) Structural unit derived from at least one compound selected from the group consisting of styrene, α-methylstyrene, 4-methylstyrene, and 4-hydroxystyrene (hereinafter sometimes referred to as “(A3) structural unit”). ), And (A4) methyl acrylate, ethyl (meth) acrylate, n-propyl (meth) acrylate, isopropyl (meth) acrylate, n-butyl (meth) acrylate, sec-butyl (meth) acrylate , A structural unit derived from at least one compound selected from the group consisting of isobutyl (meth) acrylate and tert-butyl (meth) acrylate (hereinafter sometimes referred to as “(A4) structural unit”)
Including
[A] The content ratio of the structural unit (A1) in the copolymer is 1 mol% or more and 40 mol% or less,
(A2) The content ratio of the structural unit is 1 mol% or more and 15 mol% or less,
(A3) A radiation-sensitive resin composition having a structural unit content of 1 mol% to 70 mol%, and (A4) a structural unit content of 1 mol% to 30 mol%.
当該組成物は、上記のように[A]共重合体、[B]重合性不飽和化合物、[C]感放射線性重合開始剤及び[D]有機溶媒を含有する。[A]共重合体が、特定化合物に由来する構造単位(A1)〜(A4)を特定量含むことで、[A]共重合体のアルカリ水溶液に対する溶解性を最適化し、結果として解像性を向上することができる。また、当該組成物から形成される層間絶縁膜に現像密着性及び耐性を付与することができる。また、当該組成物が[B]重合性不飽和化合物及び[C]感放射線性重合開始剤を含有することで、低露光量の場合であっても感度により優れた層間絶縁膜が得られる。 The composition contains [A] copolymer, [B] polymerizable unsaturated compound, [C] radiation sensitive polymerization initiator and [D] organic solvent as described above. [A] When the copolymer contains a specific amount of structural units (A1) to (A4) derived from a specific compound, the solubility of the [A] copolymer in an alkaline aqueous solution is optimized, resulting in resolution. Can be improved. In addition, development adhesion and resistance can be imparted to an interlayer insulating film formed from the composition. In addition, when the composition contains the [B] polymerizable unsaturated compound and the [C] radiation sensitive polymerization initiator, an interlayer insulating film having better sensitivity can be obtained even in the case of a low exposure amount.
[A]共重合体は、(A5)マレイミド、N−フェニルマレイミド及びN−シクロヘキシルマレイミドからなる群より選択される少なくとも1つの化合物に由来する構造単位をさらに含有し、その(A5)構造単位の含有割合が1モル%以上40モル%以下であることが好ましい。 [A] The copolymer further contains (A5) a structural unit derived from at least one compound selected from the group consisting of maleimide, N-phenylmaleimide and N-cyclohexylmaleimide, It is preferable that a content rate is 1 mol% or more and 40 mol% or less.
[D]有機溶媒は、下記式(1)で示される有機溶媒を含むことが好ましい。[D]有機溶媒は当該組成物の調製に用いられる溶媒であって、[A]共重合体、[B]重合性不飽和化合物及び[C]感放射線性重合開始剤分を均一に溶解又は分散することが好ましく、下記式(1)で示される有機溶媒を含むことで例えばムラを解消することができる。 [D] The organic solvent preferably contains an organic solvent represented by the following formula (1). [D] The organic solvent is a solvent used for the preparation of the composition and uniformly dissolves the [A] copolymer, [B] polymerizable unsaturated compound and [C] radiation sensitive polymerization initiator. It is preferable to disperse, and for example, unevenness can be eliminated by including an organic solvent represented by the following formula (1).
[B]重合性不飽和化合物は、ヒドロキシル基又はカルボキシル基を有する重合性不飽和化合物を含み、その[B]重合性不飽和化合物の含有量が10モル%以上60モル%以下であることが好ましい。[B]重合性不飽和化合物が特定量のヒドロキシル基又はカルボキシル基を有することによって、[A]共重合体の(A2)化合物に由来するエポキシ基との硬化反応により、より耐性が高い層間絶縁膜が得られる。 [B] The polymerizable unsaturated compound includes a polymerizable unsaturated compound having a hydroxyl group or a carboxyl group, and the content of the [B] polymerizable unsaturated compound is from 10 mol% to 60 mol%. preferable. [B] Since the polymerizable unsaturated compound has a specific amount of hydroxyl group or carboxyl group, the interlayer insulation has higher resistance due to the curing reaction with the epoxy group derived from the (A2) compound of the [A] copolymer. A membrane is obtained.
本発明の層間絶縁膜の形成方法は、
(1)当該組成物の塗膜を基板上に形成する工程、
(2)上記塗膜の少なくとも一部に放射線を照射する工程、
(3)上記放射線が照射された塗膜を現像する工程、及び
(4)上記現像された塗膜を焼成する工程
を有する。
The method for forming an interlayer insulating film of the present invention includes:
(1) The process of forming the coating film of the said composition on a board | substrate,
(2) A step of irradiating at least a part of the coating film with radiation,
(3) a step of developing the coating film irradiated with the radiation; and (4) a step of baking the developed coating film.
本発明の形成方法によると、ムラ及び現像後の残渣が少なく、透明性、比誘電率に優れる層間絶縁膜を形成できる。従って、当該組成物は、表示素子用の層間絶縁膜を形成するのに好適である。 According to the forming method of the present invention, it is possible to form an interlayer insulating film with less unevenness and residue after development, and excellent in transparency and relative dielectric constant. Therefore, the composition is suitable for forming an interlayer insulating film for a display element.
本発明には当該層間絶縁膜を備える表示素子も好適に含まれる。 The display element provided with the said interlayer insulation film is also suitably contained in this invention.
なお、本明細書にいう「焼成」とは、層間絶縁膜に要求される表面硬度が得られるまで加熱することを意味する。また、「感放射線性樹脂組成物」の「放射線」とは、可視光線、紫外線、遠紫外線、X線、荷電粒子線等を含む概念である。 Note that “firing” in the present specification means heating until the surface hardness required for the interlayer insulating film is obtained. The “radiation” of the “radiation sensitive resin composition” is a concept including visible light, ultraviolet light, far ultraviolet light, X-rays, charged particle beams and the like.
以上説明したように、本発明は感度及び解像性に優れる感放射線性樹脂組成物、並びにムラが少なく、透明性、現像密着性、比誘電率等に優れる層間絶縁膜を提供できる。従って、かかる層間絶縁膜は表示素子に好適に用いられる。 As described above, the present invention can provide a radiation-sensitive resin composition excellent in sensitivity and resolution, and an interlayer insulating film with less unevenness and excellent transparency, development adhesion, relative dielectric constant, and the like. Therefore, such an interlayer insulating film is suitably used for a display element.
<感放射線性樹脂組成物>
本発明の感放射線性樹脂組成物は、[A]共重合体、[B]重合性不飽和化合物、[C]感放射線性重合開始剤及び[D]有機溶媒を含有し、さらに任意成分を含有してもよい。以下、各成分を詳述する。
<Radiation sensitive resin composition>
The radiation-sensitive resin composition of the present invention contains [A] a copolymer, [B] a polymerizable unsaturated compound, [C] a radiation-sensitive polymerization initiator and [D] an organic solvent, and further contains optional components. You may contain. Hereinafter, each component will be described in detail.
<[A]共重合体>
[A]共重合体は、
(A1)(メタ)アクリル酸及び不飽和カルボン酸無水物からなる群より選択される少なくとも1つの化合物(以下、「(A1)化合物」と称することがある)に由来する構造単位、
(A2)(メタ)アクリル酸グリシジル、(メタ)アクリル酸3,4−エポキシシクロヘキシルメチル、4−(メタ)アクリロイルオキシブチルグリシジルエーテル及び3−エチル−3−メチル(メタ)アクリレートオキセタンからなる群より選択される少なくとも1つの化合物(以下、「(A2)化合物」と称することがある)に由来する構造単位、
(A3)スチレン、α―メチルスチレン、4―メチルスチレン及び4−ヒドロキシスチレンからなる群より選択される少なくとも1つの化合物(以下、「(A3)化合物」と称することがある)に由来する構造単位、及び
(A4)アクリル酸メチル、(メタ)アクリル酸エチル、(メタ)アクリル酸n−プロピル、(メタ)アクリル酸1−メチルエチル、(メタ)アクリル酸イソプロピル、(メタ)アクリル酸n−ブチル、(メタ)アクリル酸sec−ブチル、(メタ)アクリル酸イソブチル及び(メタ)アクリル酸tert−ブチルからなる群より選択される少なくとも1つの化合物(以下、「(A4)化合物」と称することがある)に由来する構造単位を含み、[A]共重合体における(A1)構造単位の含有割合が1モル%以上40モル%以下、(A2)構造単位の含有割合が1モル%以上15モル%以下、(A3)構造単位の含有割合が1モル%以上70モル%以下、及び(A4)構造単位の含有割合が1モル%以上50モル%以下である。
<[A] Copolymer>
[A] The copolymer is
(A1) a structural unit derived from at least one compound selected from the group consisting of (meth) acrylic acid and unsaturated carboxylic acid anhydride (hereinafter sometimes referred to as “(A1) compound”),
(A2) Glycidyl (meth) acrylate, 3,4-epoxycyclohexylmethyl (meth) acrylate, 4- (meth) acryloyloxybutyl glycidyl ether and 3-ethyl-3-methyl (meth) acrylate oxetane A structural unit derived from at least one selected compound (hereinafter sometimes referred to as “(A2) compound”),
(A3) A structural unit derived from at least one compound selected from the group consisting of styrene, α-methylstyrene, 4-methylstyrene and 4-hydroxystyrene (hereinafter sometimes referred to as “(A3) compound”). And (A4) methyl acrylate, ethyl (meth) acrylate, n-propyl (meth) acrylate, 1-methylethyl (meth) acrylate, isopropyl (meth) acrylate, n-butyl (meth) acrylate , At least one compound selected from the group consisting of sec-butyl (meth) acrylate, isobutyl (meth) acrylate and tert-butyl (meth) acrylate (hereinafter sometimes referred to as “(A4) compound”). ), And the content ratio of the (A1) structural unit in the [A] copolymer is 1 mol% or more and 40 mol. % (A2) The structural unit content is 1 mol% or more and 15 mol% or less, (A3) The structural unit content is 1 mol% or more and 70 mol% or less, and (A4) the structural unit content is 1 mol% or less. It is mol% or more and 50 mol% or less.
[(A1)化合物]
(A1)化合物は(メタ)アクリル酸及び不飽和カルボン酸無水物からなる群より選択される少なくとも1つの化合物である。(A1)化合物である不飽和カルボン酸無水物としては、代表的には不飽和ジカルボン酸無水物が挙げられる。不飽和ジカルボン酸無水物としては、例えば無水マレイン酸、無水フマル酸、無水シトラコン酸、無水メサコン酸、無水イタコン酸、5−ノルボルネン−2,3−ジカルボン酸無水物、シクロヘキセン−1,2−ジカルボン酸無水物、3−ブテン−1,2−ジカルボン酸無水物等が挙げられる。
[(A1) Compound]
The compound (A1) is at least one compound selected from the group consisting of (meth) acrylic acid and unsaturated carboxylic anhydride. (A1) As unsaturated carboxylic acid anhydride which is a compound, unsaturated dicarboxylic acid anhydride is mentioned typically. Examples of the unsaturated dicarboxylic anhydride include maleic anhydride, fumaric anhydride, citraconic anhydride, mesaconic anhydride, itaconic anhydride, 5-norbornene-2,3-dicarboxylic anhydride, cyclohexene-1,2-dicarboxylic acid Examples include acid anhydrides and 3-butene-1,2-dicarboxylic acid anhydrides.
(A1)化合物としては、アクリル酸、メタクリル酸、無水マレイン酸が、共重合反応性、[A]共重合体のアルカリ水溶液に対する溶解性及び入手の容易性からより好ましい。これらの(A1)化合物は、単独で使用してもよいし2種以上を混合して使用してもよい。 As the compound (A1), acrylic acid, methacrylic acid, and maleic anhydride are more preferable in view of copolymerization reactivity, solubility of the [A] copolymer in an alkaline aqueous solution, and availability. These (A1) compounds may be used alone or in admixture of two or more.
[A]共重合体は、(A1)化合物に由来する構造単位を、1モル%以上40モル%以下含有する。好ましくは10モル%以上35モル%以下含有する。(A1)化合物の構造単位の割合を1モル%以上40モル%以下とすることによって、[A]共重合体のアルカリ水溶液に対する溶解性を最適化し、結果として解像性を向上することができる。 [A] The copolymer contains 1 mol% or more and 40 mol% or less of a structural unit derived from the compound (A1). Preferably it contains 10 mol% or more and 35 mol% or less. (A1) By making the ratio of the structural unit of a compound 1 mol% or more and 40 mol% or less, the solubility with respect to the alkaline aqueous solution of [A] copolymer can be optimized, and resolution can be improved as a result. .
[(A2)化合物]
(A2)化合物は、ラジカル重合性を有する(メタ)アクリル酸グリシジル、(メタ)アクリル酸3,4−エポキシシクロヘキシルメチル、4−(メタ)アクリロイルオキシブチルグリシジルエーテル及び3−エチル−3−メチル(メタ)アクリレートオキセタンからなる群より選択される少なくとも1つの化合物である。これらの(A2)化合物に由来するエポキシ基と(A1)化合物に由来するカルボキシル基又は酸無水物基とが架橋反応するため、当該組成物の硬化性を向上できる。これらの(A2)化合物は、単独で使用してもよいし2種以上を混合して使用してもよい。
[(A2) Compound]
The (A2) compound is a radically polymerizable (meth) acrylate glycidyl, (meth) acrylate 3,4-epoxycyclohexylmethyl, 4- (meth) acryloyloxybutyl glycidyl ether and 3-ethyl-3-methyl ( It is at least one compound selected from the group consisting of (meth) acrylate oxetane. Since the epoxy group derived from these (A2) compounds and the carboxyl group or acid anhydride group derived from the (A1) compound undergo a crosslinking reaction, the curability of the composition can be improved. These (A2) compounds may be used alone or in combination of two or more.
[A]共重合体は、(A2)化合物に由来する構造単位を、1モル%以上15モル%以下含有する。(A2)化合物の構造単位の割合を1モル%以上15モル%以下とすることによって現像性や解像度と耐性を高いレベルでバランスできる層間絶縁膜を形成できる。 [A] The copolymer contains 1 mol% or more and 15 mol% or less of a structural unit derived from the compound (A2). (A2) By making the ratio of the structural unit of a compound 1 mol% or more and 15 mol% or less, the interlayer insulation film which can balance developability, resolution, and tolerance at a high level can be formed.
[(A3)化合物]
(A3)化合物は、スチレン、α―メチルスチレン、4―メチルスチレン及び4−ヒドロキシスチレンからなる群より選択される少なくとも1つの化合物である。[A]共重合体は、(A3)化合物に由来する構造単位を、1モル%以上70モル%以下含有する。好ましくは40モル%以上65モル%以下含有する。(A3)化合物の構造単位の割合を1モル%以上70モル%以下とすることによって、現像密着性及び耐性に優れる層間絶縁膜を形成可能な感放射線性樹脂組成物が得られる。
[(A3) Compound]
(A3) The compound is at least one compound selected from the group consisting of styrene, α-methylstyrene, 4-methylstyrene and 4-hydroxystyrene. [A] A copolymer contains 1 mol% or more and 70 mol% or less of structural units derived from the compound (A3). Preferably it contains 40 mol% or more and 65 mol% or less. (A3) By making the ratio of the structural unit of a compound 1 mol% or more and 70 mol% or less, the radiation sensitive resin composition which can form the interlayer insulation film excellent in image development adhesiveness and tolerance is obtained.
[(A4)化合物]
(A4)化合物は、アクリル酸メチル、(メタ)アクリル酸エチル、(メタ)アクリル酸n−プロピル、(メタ)アクリル酸イソプロピル、(メタ)アクリル酸n−ブチル、(メタ)アクリル酸sec−ブチル、(メタ)アクリル酸イソブチル及び(メタ)アクリル酸tert−ブチルからなる群より選択される少なくとも1つの化合物である。(A4)化合物としてアクリル酸メチルや炭素数2〜4の(メタ)アクリル酸アルキルを使用した場合、層間絶縁膜形成時の現像密着性に優れる。一方、(A4)化合物の代わりに、メタクリル酸メチルを使用した場合、Tgが高く、形成された層間絶縁膜の現像密着性が劣る場合がある。[A]共重合体は、(A4)化合物に由来する構造単位を、1モル%以上30モル%以下含有する。好ましくは5モル%以上25モル%以下含有する。(A4)化合物の構造単位の割合を1モル%以上30モル%以下とすることによって、形成される層間絶縁膜の現像密着性及び耐性に優れる感放射線性樹脂組成物が得られる。
[(A4) Compound]
(A4) Compound is methyl acrylate, ethyl (meth) acrylate, n-propyl (meth) acrylate, isopropyl (meth) acrylate, n-butyl (meth) acrylate, sec-butyl (meth) acrylate , At least one compound selected from the group consisting of isobutyl (meth) acrylate and tert-butyl (meth) acrylate. When (A4) methyl acrylate or an alkyl (meth) acrylate having 2 to 4 carbon atoms is used as the compound, it is excellent in developing adhesion at the time of forming the interlayer insulating film. On the other hand, when methyl methacrylate is used instead of the compound (A4), the Tg is high and the development adhesion of the formed interlayer insulating film may be inferior. [A] A copolymer contains 1 mol% or more and 30 mol% or less of structural units derived from the compound (A4). Preferably it contains 5 mol% or more and 25 mol% or less. (A4) By making the ratio of the structural unit of a compound 1 mol% or more and 30 mol% or less, the radiation sensitive resin composition excellent in the development adhesiveness and tolerance of the interlayer insulation film formed is obtained.
[(A5)化合物]
[A]共重合体は、上述の(A1)〜(A4)化合物に由来する構造単位に加え、必要に応じて(A5)マレイミド、N−フェニルマレイミド及びN−シクロヘキシルマレイミドからなる群より選択される少なくとも1つの化合物に由来する構造単位をさらに含有し、その(A5)構造単位の含有割合が1モル%以上40モル%以下であることが好ましい。(A5)化合物に由来する構造単位を1モル%以上40モル%以下さらに含有することで、さらに耐熱透明性を向上させることができる。
[(A5) Compound]
[A] The copolymer is selected from the group consisting of (A5) maleimide, N-phenylmaleimide and N-cyclohexylmaleimide as necessary in addition to the structural units derived from the above-mentioned compounds (A1) to (A4). It is preferable that a structural unit derived from at least one compound is further contained, and the content ratio of the structural unit (A5) is 1 mol% or more and 40 mol% or less. By further containing 1 mol% or more and 40 mol% or less of a structural unit derived from the compound (A5), the heat-resistant transparency can be further improved.
[A]共重合体の合成方法としては、例えば溶媒中で重合開始剤の存在下(A1)〜(A4)化合物及び必要に応じて(A5)化合物をラジカル共重合する方法が挙げられる。 [A] Examples of the method for synthesizing the copolymer include a method of radical copolymerizing the compounds (A1) to (A4) and, if necessary, the compound (A5) in the presence of a polymerization initiator in a solvent.
[A]共重合体の重量平均分子量(Mw)としては、2×103〜1×105が好ましく、5×103〜5×104がより好ましい。[A]共重合体のMwを2×103〜1×105とすることによって、当該組成物の放射線感度及び現像性を高めることができる。なお、本明細書における重合体のMw及び数平均分子量(Mn)は下記の条件によるゲルパーミエーションクロマトグラフィー(GPC)により測定した。
装置:GPC−101(昭和電工社)
カラム:GPC−KF−801、GPC−KF−802、GPC−KF−803及びGPC−KF−804を結合
移動相:テトラヒドロフラン
カラム温度:40℃
流速:1.0mL/分
試料濃度:1.0質量%
試料注入量:100μL
検出器:示差屈折計
標準物質:単分散ポリスチレン
[A] The weight average molecular weight (Mw) of the copolymer is preferably 2 × 10 3 to 1 × 10 5, and more preferably 5 × 10 3 to 5 × 10 4 . [A] By setting the Mw of the copolymer to 2 × 10 3 to 1 × 10 5 , the radiation sensitivity and developability of the composition can be improved. In addition, Mw and number average molecular weight (Mn) of the polymer in this specification were measured by gel permeation chromatography (GPC) under the following conditions.
Apparatus: GPC-101 (Showa Denko)
Column: GPC-KF-801, GPC-KF-802, GPC-KF-803 and GPC-KF-804 combined with mobile phase: tetrahydrofuran Column temperature: 40 ° C.
Flow rate: 1.0 mL / min Sample concentration: 1.0 mass%
Sample injection volume: 100 μL
Detector: Differential refractometer Standard material: Monodisperse polystyrene
[A]共重合体を製造するための重合反応に用いられる溶媒としては、例えばアルコール、グリコールエーテル、エチレングリコールアルキルエーテルアセテート、ジエチレングリコールモノアルキルエーテル、ジエチレングリコールジアルキルエーテル、ジプロピレングリコールジアルキルエーテル、プロピレングリコールモノアルキルエーテル、プロピレングリコールアルキルエーテルアセテート、プロピレングリコールモノアルキルエーテルプロピオネート、ケトン、エステル等が挙げられる。 [A] Solvents used in the polymerization reaction for producing the copolymer include, for example, alcohol, glycol ether, ethylene glycol alkyl ether acetate, diethylene glycol monoalkyl ether, diethylene glycol dialkyl ether, dipropylene glycol dialkyl ether, propylene glycol mono Examples include alkyl ether, propylene glycol alkyl ether acetate, propylene glycol monoalkyl ether propionate, ketone, ester and the like.
アルコールとしては、例えばベンジルアルコール等;
グリコールエーテルとしては、例えばエチレングリコールモノメチルエーテル、エチレングリコールモノエチルエーテル等;
エチレングリコールアルキルエーテルアセテートとしては、例えばエチレングリコールモノブチルエーテルアセテート、ジエチレングリコールモノエチルエーテルアセテート等;
ジエチレングリコールモノアルキルエーテルとしては、例えばジエチレングリコールモノメチルエーテル、ジエチレングリコールモノエチルエーテル等;
ジエチレングリコールジアルキルエーテルとしては、例えばジエチレングリコールジメチルエーテル、ジエチレングリコールジエチルエーテル、ジエチレングリコールエチルメチルエーテル等;
ジプロピレングリコールジアルキルエーテルとしては、例えばジプロピレングリコールジメチルエーテル、ジプロピレングリコールジエチルエーテル、ジプロピレングリコールエチルメチルエーテル等;
プロピレングリコールモノアルキルエーテルとしては、例えばプロピレングリコールメチルエーテル、プロピレングリコールエチルエーテル、プロピレングリコールプロピルエーテル、プロピレングリコールブチルエーテル等;
プロピレングリコールアルキルエーテルアセテートとしては、例えばプロピレングリコールメチルエーテルアセテート、プロピレングリコールエチルエーテルアセテート等;
プロピレングリコールモノアルキルエーテルプロピオネートとしては、例えばプロピレングリコールメチルエーテルプロピオネート、プロピレングリコールエチルエーテルプロピオネート、プロピレングリコールプロピルエーテルプロピオネート等;
ケトンとしては、例えばメチルエチルケトン、シクロヘキサノン、4−ヒドロキシ−4−メチル−2−ペンタノン、メチルイソアミルケトン等;
エステルとしては、例えば酢酸エチル、酢酸ブチル、2−ヒドロキシプロピオン酸エチル、2−ヒドロキシ−2−メチルプロピオン酸メチル、2−ヒドロキシ−2−メチルプロピオン酸エチル、ヒドロキシ酢酸ブチル、乳酸メチル、乳酸エチル、乳酸プロピル、乳酸ブチル、2−エトキシプロピオン酸エチル、2−エトキシプロピオン酸プロピル、2−エトキシプロピオン酸ブチル、2−ブトキシプロピオン酸メチル、2−ブトキシプロピオン酸エチル、2−ブトキシプロピオン酸プロピル、2−ブトキシプロピオン酸ブチル、3−メトキシプロピオン酸メチル、3−メトキシプロピオン酸エチル、3−メトキシプロピオン酸プロピル、3−メトキシプロピオン酸ブチル、3−エトキシプロピオン酸メチル、3−エトキシプロピオン酸エチル、3−エトキシプロピオン酸プロピル、3−エトキシプロピオン酸ブチル、3−プロポキシプロピオン酸メチル等が挙げられる。
Examples of the alcohol include benzyl alcohol;
Examples of glycol ethers include ethylene glycol monomethyl ether and ethylene glycol monoethyl ether;
Examples of the ethylene glycol alkyl ether acetate include ethylene glycol monobutyl ether acetate and diethylene glycol monoethyl ether acetate;
Examples of the diethylene glycol monoalkyl ether include diethylene glycol monomethyl ether and diethylene glycol monoethyl ether;
Examples of the diethylene glycol dialkyl ether include diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol ethyl methyl ether and the like;
Examples of the dipropylene glycol dialkyl ether include dipropylene glycol dimethyl ether, dipropylene glycol diethyl ether, and dipropylene glycol ethyl methyl ether;
Examples of the propylene glycol monoalkyl ether include propylene glycol methyl ether, propylene glycol ethyl ether, propylene glycol propyl ether, and propylene glycol butyl ether;
Examples of the propylene glycol alkyl ether acetate include propylene glycol methyl ether acetate and propylene glycol ethyl ether acetate;
Examples of the propylene glycol monoalkyl ether propionate include propylene glycol methyl ether propionate, propylene glycol ethyl ether propionate, propylene glycol propyl ether propionate and the like;
Examples of the ketone include methyl ethyl ketone, cyclohexanone, 4-hydroxy-4-methyl-2-pentanone, and methyl isoamyl ketone;
Examples of the ester include ethyl acetate, butyl acetate, ethyl 2-hydroxypropionate, methyl 2-hydroxy-2-methylpropionate, ethyl 2-hydroxy-2-methylpropionate, butyl hydroxyacetate, methyl lactate, ethyl lactate, Propyl lactate, butyl lactate, ethyl 2-ethoxypropionate, propyl 2-ethoxypropionate, butyl 2-ethoxypropionate, methyl 2-butoxypropionate, ethyl 2-butoxypropionate, propyl 2-butoxypropionate, 2- Butyl propionate butyl, methyl 3-methoxypropionate, ethyl 3-methoxypropionate, propyl 3-methoxypropionate, butyl 3-methoxypropionate, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate 3-ethoxy propionate propyl, 3-ethoxy propionate butyl, 3-propoxy-propionic acid methyl, and the like.
これらの溶媒のうち、エチレングリコールアルキルエーテルアセテート、ジエチレングリコールモノアルキルエーテル、ジエチレングリコールジアルキルエーテル、プロピレングリコールモノアルキルエーテル、プロピレングリコールアルキルエーテルアセテートが好ましく、ジエチレングリコールジメチルエーテル、ジエチレングリコールエチルメチルエーテル、プロピレングリコールモノメチルエーテル、プロピレングリコールモノメチルエーテルアセテートがより好ましい。 Of these solvents, ethylene glycol alkyl ether acetate, diethylene glycol monoalkyl ether, diethylene glycol dialkyl ether, propylene glycol monoalkyl ether, and propylene glycol alkyl ether acetate are preferred, and diethylene glycol dimethyl ether, diethylene glycol ethyl methyl ether, propylene glycol monomethyl ether, propylene glycol. Monomethyl ether acetate is more preferred.
[A]共重合体を製造するための重合反応に用いられる重合開始剤としては、一般的にラジカル重合開始剤として知られているものが使用できる。ラジカル重合開始剤としては、例えば2,2’−アゾビスイソブチロニトリル(AIBN)、2,2’−アゾビス−(2,4−ジメチルバレロニトリル)、2,2’−アゾビス−(4−メトキシ−2,4−ジメチルバレロニトリル)等のアゾ化合物;ベンゾイルペルオキシド、ラウロイルペルオキシド、t−ブチルペルオキシピバレート、1,1’−ビス−(t−ブチルペルオキシ)シクロヘキサン等の有機過酸化物及び過酸化水素が挙げられる。ラジカル重合開始剤として過酸化物を用いる場合には、過酸化物を還元剤とともに用いてレドックス型開始剤としてもよい。 [A] What is generally known as a radical polymerization initiator can be used as the polymerization initiator used in the polymerization reaction for producing the copolymer. Examples of the radical polymerization initiator include 2,2′-azobisisobutyronitrile (AIBN), 2,2′-azobis- (2,4-dimethylvaleronitrile), 2,2′-azobis- (4- Azo compounds such as methoxy-2,4-dimethylvaleronitrile); organic peroxides such as benzoyl peroxide, lauroyl peroxide, t-butylperoxypivalate, 1,1′-bis- (t-butylperoxy) cyclohexane and peroxides Examples include hydrogen oxide. When a peroxide is used as the radical polymerization initiator, the peroxide may be used together with a reducing agent to form a redox initiator.
[A]共重合体を製造するための重合反応においては、分子量を調整するために、分子量調整剤を使用できる。分子量調整剤としては、例えばクロロホルム、四臭化炭素等のハロゲン化炭化水素類;n−ヘキシルメルカプタン、n−オクチルメルカプタン、n−ドデシルメルカプタン、t−ドデシルメルカプタン、チオグリコール酸等のメルカプタン類;ジメチルキサントゲンスルフィド、ジイソプロピルキサントゲンジスルフィド等のキサントゲン類;ターピノーレン、α−メチルスチレンダイマー等が挙げられる。 [A] In the polymerization reaction for producing the copolymer, a molecular weight modifier can be used to adjust the molecular weight. Examples of the molecular weight modifier include halogenated hydrocarbons such as chloroform and carbon tetrabromide; mercaptans such as n-hexyl mercaptan, n-octyl mercaptan, n-dodecyl mercaptan, t-dodecyl mercaptan, and thioglycolic acid; Xanthogens such as xanthogen sulfide and diisopropylxanthogen disulfide; terpinolene, α-methylstyrene dimer and the like.
<[B]重合性不飽和化合物>
当該組成物に含有される[B]重合性不飽和化合物としては、例えばω−カルボキシポリカプロラクトンモノ(メタ)アクリレート、エチレングリコールモノ(メタ)アクリレート、エチレングリコールジ(メタ)アクリレート、1,6−ヘキサンジオールジ(メタ)アクリレート、1,9−ノナンジオールジ(メタ)アクリレート、テトラエチレングリコールジ(メタ)アクリレート、ポリエチレングリコールジ(メタ)アクリレート、ポリプロピレングリコールジ(メタ)アクリレート、ビスフェノキシエタノールフルオレンジ(メタ)アクリレート、ジメチロールトリシクロデカンジ(メタ)アクリレート、2−ヒドロキシ−3−(メタ)アクリロイロキシプロピル(メタ)アクリレート、2−(2’−ビニロキシエトキシ)エチル(メタ)アクリレート、トリメチロールプロパントリ(メタ)アクリレート、ペンタエリスリトールトリ(メタ)アクリレート、ペンタエリスリトールテトラ(メタ)アクリレート、ジペンタエリスリトールペンタ(メタ)アクリレート、ジペンタエリスリトールヘキサ(メタ)アクリレート、トリ(2−(メタ)アクリロイロキシエチル)フォスフェート、エチレンオキサイド変性ジペンタエリスリトールヘキサアクリレート、コハク酸変性ペンタエリスリトールトリアクリレート、コハク酸変性ジペンタエリスリトールペンタアクリレート等の他、直鎖アルキレン基及び脂環式構造を有し、かつ2個以上のイソシアネート基を有する化合物と、分子内に1個以上の水酸基を有し、かつ3個〜5個の(メタ)アクリロイル基を有する化合物とを反応させて得られるウレタン(メタ)アクリレート化合物等が挙げられる。
<[B] polymerizable unsaturated compound>
Examples of the [B] polymerizable unsaturated compound contained in the composition include ω-carboxypolycaprolactone mono (meth) acrylate, ethylene glycol mono (meth) acrylate, ethylene glycol di (meth) acrylate, 1,6- Hexanediol di (meth) acrylate, 1,9-nonanediol di (meth) acrylate, tetraethylene glycol di (meth) acrylate, polyethylene glycol di (meth) acrylate, polypropylene glycol di (meth) acrylate, bisphenoxyethanol full orange ( (Meth) acrylate, dimethylol tricyclodecane di (meth) acrylate, 2-hydroxy-3- (meth) acryloyloxypropyl (meth) acrylate, 2- (2′-vinyloxyethoxy) ethyl (meth) ) Acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol penta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, tri (2- (Meth) acryloyloxyethyl) phosphate, ethylene oxide modified dipentaerythritol hexaacrylate, succinic acid modified pentaerythritol triacrylate, succinic acid modified dipentaerythritol pentaacrylate, etc., as well as linear alkylene groups and alicyclic structures And a compound having two or more isocyanate groups and a compound having one or more hydroxyl groups in the molecule and having 3 to 5 (meth) acryloyl groups. Urethane obtained by response (meth) acrylate compounds, and the like.
上記[B]重合性不飽和化合物の市販品としては、例えば
アロニックスM−400、同M−402、同M−405、同M−450、同M−1310、同M−1600、同M−1960、同M−7100、同M−8030、同M−8060、同M−8100、同M−8530、同M−8560、同M−9050、アロニックスTO−1450、同TO−1382(以上、東亞合成社);
KAYARAD DPHA、同DPCA−20、同DPCA−30、同DPCA−60、同DPCA−120、同MAX−3510(以上、日本化薬社);
ビスコート295、同300、同360、同GPT、同3PA、同400(以上、大阪有機化学工業社);
ウレタンアクリレート化合物として、ニューフロンティア R−1150(第一工業製薬社);
KAYARAD DPHA−40H、UX−5000(以上、日本化薬社);
UN−9000H(根上工業社);
アロニックスM−5300、同M−5600、同M−5700、M−210、同M−220、同M−240、同M−270、同M−6200、同M−305、同M−309、同M−310、同M−315(以上、東亞合成社);
KAYARAD HDDA、KAYARAD HX−220、同HX−620、同R−526、同R−167、同R−604、同R−684、同R−551、同R−712、UX−2201、UX−2301、UX−3204、UX−3301、UX−4101、UX−6101、UX−7101、UX−8101、UX−0937、MU−2100、MU−4001(以上、日本化薬社);
アートレジンUN−9000PEP、同UN−9200A、同UN−7600、同UN−333、同UN−1003、同UN−1255、同UN−6060PTM、同UN−6060P(以上、根上工業社);
SH−500Bビスコート260、同312、同335HP(以上、大阪有機化学工業社)等が挙げられる。これらは単独で又は2種以上を混合して使用できる。
As a commercial item of the above-mentioned [B] polymerizable unsaturated compound, for example, Aronix M-400, M-402, M-405, M-450, M-1310, M-1600, M-1960 M-7100, M-8030, M-8060, M-8100, M-8100, M-8530, M-8560, M-9050, Aronix TO-1450, TO-1382 (above, Toagosei) Company);
KAYARAD DPHA, DPCA-20, DPCA-30, DPCA-60, DPCA-120, MAX-3510 (above, Nippon Kayaku Co., Ltd.);
Biscote 295, 300, 360, GPT, 3PA, 400 (Osaka Organic Chemical Co., Ltd.);
As a urethane acrylate compound, New Frontier R-1150 (Daiichi Kogyo Seiyaku Co., Ltd.);
KAYARAD DPHA-40H, UX-5000 (Nippon Kayaku Co., Ltd.);
UN-9000H (Negami Kogyo Co.);
Aronix M-5300, M-5600, M-5700, M-210, M-220, M-240, M-270, M-6200, M-305, M-309, M M-310, M-315 (above, Toagosei Co., Ltd.);
KAYARAD HDDA, KAYARAD HX-220, HX-620, R-526, R-167, R-604, R-684, R-551, R-712, UX-2201, UX-2301 UX-3204, UX-3301, UX-4101, UX-6101, UX-7101, UX-8101, UX-0937, MU-2100, MU-4001 (above, Nippon Kayaku Co., Ltd.);
Art Resin UN-9000PEP, UN-9200A, UN-7600, UN-333, UN-1003, UN-1255, UN-6060PTM, UN-6060P (Negami Industrial Co., Ltd.);
SH-500B biscoat 260, 312 and 335HP (above, Osaka Organic Chemical Industry Co., Ltd.). These can be used alone or in admixture of two or more.
[B]重合性不飽和化合物としては、ヒドロキシル基又はカルボキシル基を有する重合性不飽和化合物を含み、その[B]重合性不飽和化合物の含有量が10モル%以上60モル%以下であることが好ましい。[B]重合性不飽和化合物が特定量のヒドロキシル基又はカルボキシル基を有することによって、[A]共重合体の(A2)化合物に由来するエポキシ基との硬化反応により、より耐性が高い層間絶縁膜が得られる。当該組成物における[B]重合性不飽和化合物の含有割合としては、[A]共重合体100質量部に対して、20質量部〜150質量部が好ましく、40質量部〜100質量部がより好ましい。[B]重合性不飽和化合物の含有割合を上記範囲とすることで、当該組成物は現像密着性に優れ低露光量においても十分な硬度を有した層間絶縁膜が得られる。 [B] The polymerizable unsaturated compound includes a polymerizable unsaturated compound having a hydroxyl group or a carboxyl group, and the content of the [B] polymerizable unsaturated compound is 10 mol% or more and 60 mol% or less. Is preferred. [B] Since the polymerizable unsaturated compound has a specific amount of hydroxyl group or carboxyl group, the interlayer insulation has higher resistance due to the curing reaction with the epoxy group derived from the (A2) compound of the [A] copolymer. A membrane is obtained. As a content rate of the [B] polymerizable unsaturated compound in the said composition, 20 mass parts-150 mass parts are preferable with respect to 100 mass parts of [A] copolymers, and 40 mass parts-100 mass parts are more. preferable. [B] By making the content rate of a polymerizable unsaturated compound into the said range, the said composition is excellent in image development adhesiveness, and the interlayer insulation film which has sufficient hardness also in the low exposure amount is obtained.
<[C]感放射線性重合開始剤>
当該組成物に含有される[C]感放射線性重合開始剤は、放射線に感応して[B]重合性不飽和化合物の重合を開始しうる活性種を生じる成分である。このような[C]感放射線性重合開始剤としては、O−アシルオキシム化合物、アセトフェノン化合物、ビイミダゾール化合物等が挙げられる。
<[C] Radiation sensitive polymerization initiator>
The [C] radiation sensitive polymerization initiator contained in the composition is a component that generates an active species capable of initiating polymerization of the [B] polymerizable unsaturated compound in response to radiation. Examples of such [C] radiation-sensitive polymerization initiators include O-acyloxime compounds, acetophenone compounds, biimidazole compounds, and the like.
O−アシルオキシム化合物としては、例えばエタノン−1−〔9−エチル−6−(2−メチルベンゾイル)−9H−カルバゾール−3−イル〕−1−(O−アセチルオキシム)、1−〔9−エチル−6−ベンゾイル−9H−カルバゾール−3−イル〕−オクタン−1−オンオキシム−O−アセテート、1−〔9−エチル−6−(2−メチルベンゾイル)−9H−カルバゾール−3−イル〕−エタン−1−オンオキシム−O−ベンゾエート、1−〔9−n−ブチル−6−(2−エチルベンゾイル)−9H−カルバゾール−3−イル〕−エタン−1−オンオキシム−O−ベンゾエート、エタノン−1−[9−エチル−6−(2−メチル−4−テトラヒドロフラニルベンゾイル)−9H−カルバゾール−3−イル]−1−(O−アセチルオキシム)、エタノン−1−〔9−エチル−6−(2−メチル−4−テトラヒドロピラニルベンゾイル)−9H−カルバゾール−3−イル〕−1−(O−アセチルオキシム)、エタノン−1−〔9−エチル−6−(2−メチル−5−テトラヒドロフラニルベンゾイル)−9H−カルバゾール−3−イル〕−1−(O−アセチルオキシム)、エタノン−1−〔9−エチル−6−{2−メチル−4−(2,2−ジメチル−1,3−ジオキソラニル)メトキシベンゾイル}−9H−カルバゾール−3−イル〕−1−(O−アセチルオキシム)等が挙げられる。これらのうち、エタノン−1−〔9−エチル−6−(2−メチルベンゾイル)−9H−カルバゾール−3−イル〕−1−(O−アセチルオキシム)、エタノン−1−〔9−エチル−6−(2−メチル−4−テトラヒドロフラニルメトキシベンゾイル)−9H−カルバゾール−3−イル〕−1−(O−アセチルオキシム)又はエタノン−1−〔9−エチル−6−{2−メチル−4−(2,2−ジメチル−1,3−ジオキソラニル)メトキシベンゾイル}−9H−カルバゾール−3−イル〕−1−(O−アセチルオキシム)が好ましい。これらO−アシルオキシム化合物は、単独で使用してもよいし2種以上を混合して使用してもよい。 Examples of the O-acyloxime compound include ethanone-1- [9-ethyl-6- (2-methylbenzoyl) -9H-carbazol-3-yl] -1- (O-acetyloxime), 1- [9- Ethyl-6-benzoyl-9H-carbazol-3-yl] -octane-1-oneoxime-O-acetate, 1- [9-ethyl-6- (2-methylbenzoyl) -9H-carbazol-3-yl]- Ethan-1-one oxime-O-benzoate, 1- [9-n-butyl-6- (2-ethylbenzoyl) -9H-carbazol-3-yl] -ethane-1-one oxime-O-benzoate, ethanone-1 -[9-ethyl-6- (2-methyl-4-tetrahydrofuranylbenzoyl) -9H-carbazol-3-yl] -1- (O-acetyloxime) Ethanone-1- [9-ethyl-6- (2-methyl-4-tetrahydropyranylbenzoyl) -9H-carbazol-3-yl] -1- (O-acetyloxime), ethanone-1- [9-ethyl -6- (2-Methyl-5-tetrahydrofuranylbenzoyl) -9H-carbazol-3-yl] -1- (O-acetyloxime), ethanone-1- [9-ethyl-6- {2-methyl-4 -(2,2-dimethyl-1,3-dioxolanyl) methoxybenzoyl} -9H-carbazol-3-yl] -1- (O-acetyloxime) and the like. Of these, ethanone-1- [9-ethyl-6- (2-methylbenzoyl) -9H-carbazol-3-yl] -1- (O-acetyloxime), ethanone-1- [9-ethyl-6 -(2-Methyl-4-tetrahydrofuranylmethoxybenzoyl) -9H-carbazol-3-yl] -1- (O-acetyloxime) or ethanone-1- [9-ethyl-6- {2-methyl-4- (2,2-Dimethyl-1,3-dioxolanyl) methoxybenzoyl} -9H-carbazol-3-yl] -1- (O-acetyloxime) is preferred. These O-acyloxime compounds may be used alone or in combination of two or more.
アセトフェノン化合物としては、例えばα−アミノケトン化合物、α−ヒドロキシケトン化合物が挙げられる。 Examples of the acetophenone compound include an α-aminoketone compound and an α-hydroxyketone compound.
α−アミノケトン化合物としては、例えば2−ベンジル−2−ジメチルアミノ−1−(4−モルフォリノフェニル)−ブタン−1−オン、2−ジメチルアミノ−2−(4−メチルベンジル)−1−(4−モルフォリン−4−イル−フェニル)−ブタン−1−オン、2−メチル−1−(4−メチルチオフェニル)−2−モルフォリノプロパン−1−オン等が挙げられる。 Examples of the α-aminoketone compound include 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl) -butan-1-one, 2-dimethylamino-2- (4-methylbenzyl) -1- ( 4-morpholin-4-yl-phenyl) -butan-1-one, 2-methyl-1- (4-methylthiophenyl) -2-morpholinopropan-1-one, and the like.
α−ヒドロキシケトン化合物としては、例えば1−フェニル−2−ヒドロキシ−2−メチルプロパン−1−オン、1−(4−i−プロピルフェニル)−2−ヒドロキシ−2−メチルプロパン−1−オン、4−(2−ヒドロキシエトキシ)フェニル−(2−ヒドロキシ−2−プロピル)ケトン、1−ヒドロキシシクロヘキシルフェニルケトン等が挙げられる Examples of the α-hydroxyketone compound include 1-phenyl-2-hydroxy-2-methylpropan-1-one, 1- (4-i-propylphenyl) -2-hydroxy-2-methylpropan-1-one, 4- (2-hydroxyethoxy) phenyl- (2-hydroxy-2-propyl) ketone, 1-hydroxycyclohexyl phenylketone and the like can be mentioned.
これらのアセトフェノン化合物のうちα−アミノケトン化合物が好ましく、2−ベンジル−2−ジメチルアミノ−1−(4−モルフォリノフェニル)−ブタン−1−オン又は2−ジメチルアミノ−2−(4−メチルベンジル)−1−(4−モルフォリン−4−イル−フェニル)−ブタン−1−オンがより好ましい。 Of these acetophenone compounds, α-aminoketone compounds are preferred, such as 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl) -butan-1-one or 2-dimethylamino-2- (4-methylbenzyl). ) -1- (4-Morpholin-4-yl-phenyl) -butan-1-one is more preferred.
ビイミダゾール化合物としては、例えば2,2’−ビス(2−クロロフェニル)−4,4’,5,5’−テトラキス(4−エトキシカルボニルフェニル)−1,2’−ビイミダゾール、2,2’−ビス(2−クロロフェニル)−4,4’,5,5’−テトラフェニル−1,2’−ビイミダゾール、2,2’−ビス(2,4−ジクロロフェニル)−4,4’,5,5’−テトラフェニル−1,2’−ビイミダゾール、2,2’−ビス(2,4,6−トリクロロフェニル)−4,4’,5,5’−テトラフェニル−1,2’−ビイミダゾール等が挙げられる。これらのうち、2,2’−ビス(2−クロロフェニル)−4,4’,5,5’−テトラフェニル−1,2’−ビイミダゾール、2,2’−ビス(2,4−ジクロロフェニル)−4,4’,5,5’−テトラフェニル−1,2’−ビイミダゾール又は2,2’−ビス(2,4,6−トリクロロフェニル)−4,4’,5,5’−テトラフェニル−1,2’−ビイミダゾールが好ましく、2,2’−ビス(2,4−ジクロロフェニル)−4,4’,5,5’−テトラフェニル−1,2’−ビイミダゾールがより好ましい。 Examples of the biimidazole compound include 2,2′-bis (2-chlorophenyl) -4,4 ′, 5,5′-tetrakis (4-ethoxycarbonylphenyl) -1,2′-biimidazole, 2,2 ′. -Bis (2-chlorophenyl) -4,4 ', 5,5'-tetraphenyl-1,2'-biimidazole, 2,2'-bis (2,4-dichlorophenyl) -4,4', 5 5′-tetraphenyl-1,2′-biimidazole, 2,2′-bis (2,4,6-trichlorophenyl) -4,4 ′, 5,5′-tetraphenyl-1,2′-bi Examples include imidazole. Among these, 2,2′-bis (2-chlorophenyl) -4,4 ′, 5,5′-tetraphenyl-1,2′-biimidazole, 2,2′-bis (2,4-dichlorophenyl) -4,4 ', 5,5'-tetraphenyl-1,2'-biimidazole or 2,2'-bis (2,4,6-trichlorophenyl) -4,4', 5,5'-tetra Phenyl-1,2'-biimidazole is preferred, and 2,2'-bis (2,4-dichlorophenyl) -4,4 ', 5,5'-tetraphenyl-1,2'-biimidazole is more preferred.
[C]感放射線性重合開始剤としては、市販品を使用してもよく、例えば2−メチル−1−(4−メチルチオフェニル)−2−モルフォリノプロパン−1−オン(イルガキュア907)、2−(4−メチルベンジル)−2−(ジメチルアミノ)−1−(4−モルフォリノフェニル)−ブタン−1−オン(イルガキュア379)、エタノン−1−〔9−エチル−6−(2−メチルベンゾイル)−9H−カルバゾール−3−イル〕−1−(O−アセチルオキシム)(イルガキュアOXE02)、1−〔4−(フェニルチオ)−2−(O−ベンゾイルオキシム)〕(イルガキュアOXE01)、ビス(2,4,6トリメチルベンゾイル)−フェニルフォスフィンオキサイド(イルガキュア819)(以上、チバ・スペシャルティー・ケミカルズ社)等が挙げられる。 [C] Commercially available products may be used as the radiation-sensitive polymerization initiator, such as 2-methyl-1- (4-methylthiophenyl) -2-morpholinopropan-1-one (Irgacure 907), 2 -(4-Methylbenzyl) -2- (dimethylamino) -1- (4-morpholinophenyl) -butan-1-one (Irgacure 379), ethanone-1- [9-ethyl-6- (2-methyl) Benzoyl) -9H-carbazol-3-yl] -1- (O-acetyloxime) (Irgacure OXE02), 1- [4- (phenylthio) -2- (O-benzoyloxime)] (Irgacure OXE01), bis ( 2,4,6 trimethylbenzoyl) -phenylphosphine oxide (Irgacure 819) (above, Ciba Specialty Chemicals) And the like.
[C]感放射線性重合開始剤は、単独で又は2種以上を混合して使用できる。当該組成物における[C]感放射線性重合開始剤の含有割合としては、[A]共重合体100質量部に対して、1質量部〜25質量部が好ましく、1質量部〜20質量部がより好ましい。[C]感放射線性重合開始剤の含有割合を1質量部〜25質量部とすることで、当該組成物は、低露光量の場合でも高い密着性を有する層間絶縁膜を形成できる。 [C] The radiation-sensitive polymerization initiators can be used alone or in admixture of two or more. As a content rate of the [C] radiation sensitive polymerization initiator in the said composition, 1 mass part-25 mass parts are preferable with respect to 100 mass parts of [A] copolymers, and 1 mass part-20 mass parts are. More preferred. [C] By making the content rate of a radiation sensitive polymerization initiator into 1 mass part-25 mass parts, the said composition can form the interlayer insulation film which has high adhesiveness also in the case of a low exposure amount.
<[D]有機溶媒>
当該組成物の調製に用いられる溶媒としては、[A]共重合体、[B]重合性不飽和化合物、[C]感放射線性重合開始剤、[D]有機溶媒及び任意成分を均一に溶解又は分散し、各成分と反応しないものが用いられる。このような溶媒としては、上述した[A]共重合体を合成するために使用できる溶媒として例示したものと同様のものが挙げられる。溶媒は、単独で又は2種以上を混合して使用できる。
<[D] Organic solvent>
Solvents used for the preparation of the composition include [A] copolymer, [B] polymerizable unsaturated compound, [C] radiation sensitive polymerization initiator, [D] organic solvent and optional components uniformly dissolved. Or what is disperse | distributed and does not react with each component is used. As such a solvent, the thing similar to what was illustrated as a solvent which can be used in order to synthesize | combine the [A] copolymer mentioned above is mentioned. A solvent can be used individually or in mixture of 2 or more types.
各成分の溶解性、各成分との反応性、塗膜形成の容易性等の観点から、[D]有機溶媒は、上記式(1)で示される有機溶媒を含むことが好ましい。[D]有機溶媒は当該組成物の調製に用いられる溶媒であって、[A]共重合体、[B]重合性不飽和化合物及び[C]感放射線性重合開始剤分を均一に溶解又は分散することが好ましく、上記式(1)で示される有機溶媒を含むことで例えばムラを解消することができる。 From the viewpoint of the solubility of each component, the reactivity with each component, the ease of coating film formation, and the like, the [D] organic solvent preferably contains the organic solvent represented by the above formula (1). [D] The organic solvent is a solvent used for the preparation of the composition and uniformly dissolves the [A] copolymer, [B] polymerizable unsaturated compound and [C] radiation sensitive polymerization initiator. It is preferable to disperse, and for example, unevenness can be eliminated by including the organic solvent represented by the above formula (1).
上記式(1)中、R1及びR2はそれぞれ独立して、炭素数1〜6のアルキル基である。nは1〜6の整数である。炭素数1〜6のアルキル基としては、直鎖状又は分岐状のいずれであってもよく、例えばメチル基、エチル基、プロピル基、ブチル基、ペンチル基等が挙げられる。式(1)で示されるこれらの[D]有機溶媒としては、3−メトキシプロピオン酸メチル、3−メトキシプロピオン酸エチルがより好ましい。 The formula (1), R 1 and R 2 are each independently an alkyl group having 1 to 6 carbon atoms. n is an integer of 1-6. The alkyl group having 1 to 6 carbon atoms may be either linear or branched, and examples thereof include a methyl group, an ethyl group, a propyl group, a butyl group, and a pentyl group. These [D] organic solvents represented by the formula (1) are more preferably methyl 3-methoxypropionate and ethyl 3-methoxypropionate.
<任意成分>
当該組成物は、上記の[A]共重合体、[B]重合性不飽和化合物、[C]感放射線性重合開始剤、及び[D]有機溶媒に加え、本発明の効果を損なわない範囲で[E]密着助剤、[F]界面活性剤、[G]重合禁止剤等の任意成分を含有できる。これらの各任意成分は、単独で使用してもよいし2種以上を混合して使用してもよい。以下、任意成分について詳述する。
<Optional component>
In addition to the above [A] copolymer, [B] polymerizable unsaturated compound, [C] radiation sensitive polymerization initiator, and [D] organic solvent, the composition does not impair the effects of the present invention. In [E], it can contain optional components such as an adhesion assistant, [F] surfactant, and [G] polymerization inhibitor. Each of these optional components may be used alone or in combination of two or more. Hereinafter, the optional components will be described in detail.
[[E]密着助剤]
[E]密着助剤は、得られる層間絶縁膜と基板との接着性をさらに向上させるために使用できる。このような[E]密着助剤としては、カルボキシル基、メタアクリロイル基、ビニル基、イソシアネート基、オキシラニル基等の反応性官能基を有する官能性シランカップリング剤が好ましく、例えばトリメトキシシリル安息香酸、γ−メタクリロキシプロピルトリメトキシシラン、ビニルトリアセトキシシラン、ビニルトリメトキシシラン、γ−イソシアナートプロピルトリエトキシシラン、γ−グリシドキシプロピルトリメトキシシラン、β−(3,4−エポキシシクロヘキシル)エチルトリメトキシシラン、アクリル酸2−(2−ビニロキシエトキシ)エチル等が挙げられる。
[[E] Adhesion aid]
[E] The adhesion assistant can be used to further improve the adhesion between the obtained interlayer insulating film and the substrate. Such [E] adhesion assistant is preferably a functional silane coupling agent having a reactive functional group such as a carboxyl group, a methacryloyl group, a vinyl group, an isocyanate group, or an oxiranyl group, such as trimethoxysilylbenzoic acid. , Γ-methacryloxypropyltrimethoxysilane, vinyltriacetoxysilane, vinyltrimethoxysilane, γ-isocyanatopropyltriethoxysilane, γ-glycidoxypropyltrimethoxysilane, β- (3,4-epoxycyclohexyl) ethyl Examples include trimethoxysilane and 2- (2-vinyloxyethoxy) ethyl acrylate.
[E]密着助剤の使用量としては、[A]共重合体100質量部に対して、15質量部以下が好ましく、10質量部以下がより好ましい。密着助剤の使用量が15質量部を超えると現像残りを生じやすくなる傾向がある。 [E] The use amount of the adhesion assistant is preferably 15 parts by mass or less, and more preferably 10 parts by mass or less with respect to 100 parts by mass of the [A] copolymer. When the amount of the adhesion aid used exceeds 15 parts by mass, there is a tendency that development residue tends to occur.
[[F]界面活性剤]
[F]界面活性剤は、当該組成物の被膜形成性をより向上させるために使用できる。界面活性剤としては、例えばフッ素系界面活性剤、シリコーン系界面活性剤及びその他の界面活性剤が挙げられる。上記フッ素系界面活性剤としては、末端、主鎖及び側鎖の少なくともいずれかの部位にフルオロアルキル基及び/又はフルオロアルキレン基を有する化合物が好ましく、例えば1,1,2,2−テトラフロロ−n−オクチル(1,1,2,2−テトラフロロ−n−プロピル)エーテル、1,1,2,2−テトラフロロ−n−オクチル(n−ヘキシル)エーテル、ヘキサエチレングリコールジ(1,1,2,2,3,3−ヘキサフロロ−n−ペンチル)エーテル、オクタエチレングリコールジ(1,1,2,2−テトラフロロ−n−ブチル)エーテル、ヘキサプロピレングリコールジ(1,1,2,2,3,3−ヘキサフロロ−n−ペンチル)エーテル、オクタプロピレングリコールジ(1,1,2,2−テトラフロロ−n−ブチル)エーテル、パーフロロ−n−ドデカンスルホン酸ナトリウム、1,1,2,2,3,3−ヘキサフロロ−n−デカン、1,1,2,2,8,8,9,9,10,10−デカフロロ−n−ドデカンや、フロロアルキルベンゼンスルホン酸ナトリウム、フロロアルキルリン酸ナトリウム、フロロアルキルカルボン酸ナトリウム、ジグリセリンテトラキス(フロロアルキルポリオキシエチレンエーテル)、フロロアルキルアンモニウムヨージド、フロロアルキルベタイン、他のフロロアルキルポリオキシエチレンエーテル、パーフロロアルキルポリオキシエタノール、パーフロロアルキルアルコキシレート、カルボン酸フロロアルキルエステル等が挙げられる。
[[F] Surfactant]
[F] A surfactant can be used to further improve the film-forming property of the composition. Examples of the surfactant include a fluorine-based surfactant, a silicone-based surfactant, and other surfactants. The fluorine-based surfactant is preferably a compound having a fluoroalkyl group and / or a fluoroalkylene group in at least one of the terminal, main chain and side chain, for example, 1,1,2,2-tetrafluoro-n. -Octyl (1,1,2,2-tetrafluoro-n-propyl) ether, 1,1,2,2-tetrafluoro-n-octyl (n-hexyl) ether, hexaethylene glycol di (1,1,2, 2,3,3-hexafluoro-n-pentyl) ether, octaethylene glycol di (1,1,2,2-tetrafluoro-n-butyl) ether, hexapropylene glycol di (1,1,2,2,3, 3-hexafluoro-n-pentyl) ether, octapropylene glycol di (1,1,2,2-tetrafluoro-n-butyl) ether Sodium perfluoro-n-dodecanesulfonate, 1,1,2,2,3,3-hexafluoro-n-decane, 1,1,2,2,8,8,9,9,10,10-decafluoro-n -Dodecane, sodium fluoroalkylbenzenesulfonate, sodium fluoroalkylphosphate, sodium fluoroalkylcarboxylate, diglycerin tetrakis (fluoroalkylpolyoxyethylene ether), fluoroalkylammonium iodide, fluoroalkylbetaine, other fluoroalkylpolyoxy Examples thereof include ethylene ether, perfluoroalkyl polyoxyethanol, perfluoroalkyl alkoxylate, and carboxylic acid fluoroalkyl ester.
フッ素系界面活性剤の市販品としては、例えばBM−1000、BM−1100(以上、BM CHEMIE社)、メガファックF142D、同F172、同F173、同F183、同F178、同F191、同F471、同F476(以上、大日本インキ化学工業社)、フロラードFC−170C、同−171、同−430、同−431(以上、住友スリーエム社)、サーフロンS−112、同−113、同−131、同−141、同−145、同−382、サーフロンSC−101、同−102、同−103、同−104、同−105、同−106(以上、旭硝子社)、エフトップEF301、同303、同352(以上、新秋田化成社)、フタージェントFT−100、同−110、同−140A、同−150、同−250、同−251、同−300、同−310、同−400S、フタージェントFTX−218、同−251、フタージェント710F(以上、ネオス社)等が挙げられる。 Commercially available fluorosurfactants include, for example, BM-1000, BM-1100 (above, BM CHEMIE), MegaFuck F142D, F172, F173, F183, F178, F191, F191, and F471. F476 (above, Dainippon Ink & Chemicals, Inc.), Florard FC-170C, -171, -430, -431 (above, Sumitomo 3M), Surflon S-112, -113, -131, -141, -145, -382, Surflon SC-101, -102, -103, -104, -105, -106 (above, Asahi Glass), F-top EF301, 303, 352 (above, Shin-Akita Kasei Co., Ltd.), Footent FT-100, -110, -140A, -150, -250, and -25 , The -300, the -310, the -400S, Ftergent FTX-218, the same -251, Ftergent 710F (or, Neos Co., Ltd.).
シリコーン系界面活性剤の市販品としては、例えばトーレシリコーンDC3PA、同DC7PA、同SH11PA、同SH21PA、同SH28PA、同SH29PA、同SH30PA、同SH−190、同SH−193、同SZ−6032、同SF−8428、同DC−57、同DC−190(以上、東レ・ダウコーニング・シリコーン社)、TSF−4440、TSF−4300、TSF−4445、TSF−4446、TSF−4460、TSF−4452(以上、GE東芝シリコーン社)、オルガノシロキサンポリマーKP341(信越化学工業社)等が挙げられる。 Examples of commercially available silicone surfactants include Torresilicone DC3PA, DC7PA, SH11PA, SH21PA, SH28PA, SH29PA, SH30PA, SH-190, SH-193, SZ-6032, SF-8428, DC-57, DC-190 (above, Toray Dow Corning Silicone), TSF-4440, TSF-4300, TSF-4445, TSF-4446, TSF-4460, TSF-4442 (above GE Toshiba Silicone), organosiloxane polymer KP341 (Shin-Etsu Chemical Co., Ltd.) and the like.
その他の界面活性剤としては、例えばポリオキシエチレンラウリルエーテル、ポリオキシエチレンステアリルエーテル、ポリオキシエチレンオレイルエーテル等のポリオキシエチレンアルキルエーテル;ポリオキシエチレン−n−オクチルフェニルエーテル、ポリオキシエチレン−n−ノニルフェニルエーテル等のポリオキシエチレンアリールエーテル;ポリオキシエチレンジラウレート、ポリオキシエチレンジステアレート等のポリオキシエチレンジアルキルエステル等のノニオン系界面活性剤、(メタ)アクリル酸系共重合体ポリフローNo.57、同No.95(以上、共栄社化学社)等が挙げられる。 Examples of other surfactants include polyoxyethylene alkyl ethers such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, and polyoxyethylene oleyl ether; polyoxyethylene-n-octylphenyl ether, polyoxyethylene-n- Polyoxyethylene aryl ethers such as nonylphenyl ether; nonionic surfactants such as polyoxyethylene dialkyl esters such as polyoxyethylene dilaurate and polyoxyethylene distearate; (meth) acrylic acid copolymer polyflow No. 57, no. 95 (above, Kyoeisha Chemical Co., Ltd.).
界面活性剤の使用量としては、[A]共重合体100質量部に対して、1.0質量部以下が好ましく、0.8質量部以下がより好ましい。界面活性剤の使用量が1.0質量部を超えると、膜ムラを生じやすくなる。 As the usage-amount of surfactant, 1.0 mass part or less is preferable with respect to 100 mass parts of [A] copolymers, and 0.8 mass part or less is more preferable. When the usage-amount of surfactant exceeds 1.0 mass part, it will become easy to produce a film | membrane nonuniformity.
[[G]重合禁止剤]
[G]重合禁止剤としては、例えば硫黄、キノン類、ヒドロキノン類、ポリオキシ化合物、アミン、ニトロニトロソ化合物等が挙げられ、より具体的には、p−メトキシフェノール、N−ニトロソ−N−フェニルヒドロキシルアミンアルミニウム等が挙げられる。
[[G] Polymerization inhibitor]
[G] Examples of the polymerization inhibitor include sulfur, quinones, hydroquinones, polyoxy compounds, amines, nitronitroso compounds, and more specifically, p-methoxyphenol, N-nitroso-N-phenylhydroxyl. Examples include amine aluminum.
[G]重合禁止剤の使用量としては、[A]共重合体100質量部に対して、3.0質量部以下が好ましく、1.0質量部以下がより好ましい。[G]重合禁止剤の使用量が3.0質量部を超えると当該組成物の感度が低下してパターン形状が劣化する場合がある。 [G] The amount of the polymerization inhibitor used is preferably 3.0 parts by mass or less and more preferably 1.0 part by mass or less with respect to 100 parts by mass of the [A] copolymer. [G] When the usage-amount of a polymerization inhibitor exceeds 3.0 mass parts, the sensitivity of the said composition may fall and a pattern shape may deteriorate.
<当該組成物の調製方法>
当該組成物は、[A]共重合体、[B]重合性不飽和化合物、[C]感放射線性重合開始剤及び[D]有機溶媒に加え、必要に応じて任意成分を所定の割合で混合することにより調製される。この感放射線性樹脂組成物は好ましくは適当な溶媒に溶解されて溶液状態で用いられる。
<Method for preparing the composition>
In addition to the [A] copolymer, the [B] polymerizable unsaturated compound, the [C] radiation sensitive polymerization initiator and the [D] organic solvent, the composition contains optional components at a predetermined ratio as necessary. Prepared by mixing. This radiation-sensitive resin composition is preferably used in a solution state after being dissolved in an appropriate solvent.
当該組成物を溶液状態として調製する場合、固形分濃度(組成物溶液中に占める溶媒以外の成分)は、使用目的や所望の膜厚の値等に応じて任意の濃度(例えば5質量%〜50質量%)に設定できる。より好ましい固形分濃度としては、基板上への被膜の形成方法により異なるが、これについては後述する。このようにして調製された組成物溶液については、孔径0.5μm程度のミリポアフィルタ等を用いて濾過した後、使用に供することができる。 When the composition is prepared as a solution, the solid content concentration (components other than the solvent in the composition solution) can be set to any concentration (for example, 5% by mass to 5% by mass depending on the purpose of use, the desired film thickness value, etc.). 50% by mass). A more preferable solid content concentration varies depending on the method of forming a film on the substrate, which will be described later. The composition solution thus prepared can be used after being filtered using a Millipore filter or the like having a pore size of about 0.5 μm.
<層間絶縁膜及びその形成方法>
当該組成物は、表示素子用の層間絶縁膜を形成するのに好適である
当該層間絶縁膜の形成方法は、
(1)当該組成物の塗膜を基板上に形成する工程、
(2)上記塗膜の少なくとも一部に放射線を照射する工程、
(3)上記放射線が照射された塗膜を現像する工程、及び
(4)上記現像された塗膜を焼成する工程
を有する。
<Interlayer insulating film and method for forming the same>
The composition is suitable for forming an interlayer insulating film for a display element.
(1) The process of forming the coating film of the said composition on a board | substrate,
(2) A step of irradiating at least a part of the coating film with radiation,
(3) a step of developing the coating film irradiated with the radiation; and (4) a step of baking the developed coating film.
本発明の形成方法によると、ムラ及び残渣が少なく、透明性、比誘電率に優れる層間絶縁膜を形成できる。以下、各工程を詳述する。 According to the forming method of the present invention, it is possible to form an interlayer insulating film with less unevenness and residue and excellent transparency and relative dielectric constant. Hereinafter, each process is explained in full detail.
[工程(1)]
本工程では、透明基板の片面に透明導電膜を形成し、この透明導電膜の上に当該組成物の被膜を形成する。透明基板としては、例えばソーダライムガラス、無アルカリガラス等のガラス基板、ポリエチレンテレフタレート、ポリブチレンテレフタレート、ポリエーテルスルホン、ポリカーボネート、ポリイミド等のプラスチックからなる樹脂基板等が挙げられる。
[Step (1)]
In this step, a transparent conductive film is formed on one side of the transparent substrate, and a film of the composition is formed on the transparent conductive film. Examples of the transparent substrate include glass substrates such as soda lime glass and alkali-free glass, and resin substrates made of plastics such as polyethylene terephthalate, polybutylene terephthalate, polyethersulfone, polycarbonate, and polyimide.
透明基板の一面に設けられる透明導電膜としては、酸化スズ(SnO2)からなるNESA膜(米国PPG社の登録商標)、酸化インジウム−酸化スズ(In2O3−SnO2)からなるITO膜等が挙げられる。 As the transparent conductive film provided on one surface of the transparent substrate, a NESA film (registered trademark of PPG, USA) made of tin oxide (SnO 2 ), an ITO film made of indium oxide-tin oxide (In 2 O 3 -SnO 2 ) Etc.
塗布法により被膜を形成する場合、上記透明導電膜の上に当該組成物の溶液を塗布した後、好ましくは塗布面を加熱(プレベーク)することにより、被膜を形成することができる。塗布法に用いる組成物溶液の固形分濃度としては、5質量%〜50質量%が好ましく、10質量%〜40質量%がより好ましく、15質量%〜35質量%が特に好ましい。当該組成物の塗布方法としては、例えばスプレー法、ロールコート法、回転塗布法(スピンコート法)、スリット塗布法(スリットダイ塗布法)、バー塗布法、インクジェット塗布法等の適宜の方法が採用できる。これらのうち、スピンコート法又はスリット塗布法が好ましい。 In the case of forming a film by a coating method, the film can be formed by applying a solution of the composition on the transparent conductive film and then heating (pre-baking) the coated surface. As solid content concentration of the composition solution used for a coating method, 5 mass%-50 mass% are preferable, 10 mass%-40 mass% are more preferable, 15 mass%-35 mass% are especially preferable. As a coating method of the composition, for example, an appropriate method such as a spray method, a roll coating method, a spin coating method (spin coating method), a slit coating method (slit die coating method), a bar coating method, an ink jet coating method or the like is adopted. it can. Of these, spin coating or slit coating is preferred.
上記プレベークの条件としては、各成分の種類、配合割合等によって異なるが、70℃〜120℃が好ましく、1分〜15分間程度である。被膜のプレベーク後の膜厚は、0.5μm〜10μmが好ましく、1.0μm〜7.0μm程度がより好ましい。 The prebaking conditions vary depending on the type of each component, the blending ratio, and the like, but are preferably 70 ° C. to 120 ° C. and about 1 to 15 minutes. The film thickness after pre-baking of the coating is preferably 0.5 μm to 10 μm, more preferably about 1.0 μm to 7.0 μm.
[工程(2)]
本工程では、形成された被膜の少なくとも一部に放射線を照射する。このとき、被膜の一部にのみ照射する際には、例えば所定のパターンを有するフォトマスクを介して照射する方法によることができる。
[Step (2)]
In this step, radiation is applied to at least a part of the formed film. At this time, when irradiating only a part of the film, for example, the irradiation can be performed through a photomask having a predetermined pattern.
照射に使用される放射線としては、可視光線、紫外線、遠紫外線等が挙げられる。このうち波長が250nm〜550nmの範囲にある放射線が好ましく、365nmの紫外線を含む放射線がより好ましい。 Examples of radiation used for irradiation include visible light, ultraviolet light, and far ultraviolet light. Of these, radiation having a wavelength in the range of 250 nm to 550 nm is preferable, and radiation including ultraviolet light of 365 nm is more preferable.
放射線照射量(露光量)は、照射される放射線の波長365nmにおける強度を照度計(OAI model 356、Optical Associates Inc.製)により測定した値として、100J/m2〜5,000J/m2が好ましく、200J/m2〜3,000J/m2がより好ましい。 Radiation dose (exposure dose), as a value measured by a luminometer intensity at a wavelength 365nm of the radiation emitted (OAI model 356, Optical Associates Ltd. Inc.), 100J / m 2 ~5,000J / m 2 is Preferably, 200 J / m 2 to 3,000 J / m 2 is more preferable.
当該組成物は、従来知られている組成物と比較して放射線感度が高く、上記放射線照射量が850J/m2以下であっても所望の膜厚、良好な形状、優れた密着性及び高い硬度の層間絶縁膜を得ることができる。 The composition has high radiation sensitivity compared to a conventionally known composition, and even when the radiation dose is 850 J / m 2 or less, a desired film thickness, good shape, excellent adhesion and high An interlayer insulating film having a hardness can be obtained.
[工程(3)]
本工程では、放射線照射後の被膜を現像することにより、不要な部分を除去して、所定のパターンを形成する。現像に使用される現像液としては、例えば水酸化ナトリウム、水酸化カリウム、炭酸ナトリウム等の無機アルカリ、テトラメチルアンモニウムヒドロキシド、テトラエチルアンモニウムヒドロキシド等の4級アンモニウム塩等のアルカリ性化合物の水溶液が挙げられる。上記アルカリ性化合物の水溶液には、メタノール、エタノール等の水溶性有機溶媒及び/又は界面活性剤を適当量添加してもよい。
[Step (3)]
In this step, the film after irradiation is developed to remove unnecessary portions and form a predetermined pattern. Examples of the developer used for development include aqueous solutions of alkaline compounds such as inorganic alkalis such as sodium hydroxide, potassium hydroxide and sodium carbonate, and quaternary ammonium salts such as tetramethylammonium hydroxide and tetraethylammonium hydroxide. It is done. An appropriate amount of a water-soluble organic solvent such as methanol or ethanol and / or a surfactant may be added to the aqueous solution of the alkaline compound.
現像方法としては、液盛り法、ディッピング法、シャワー法等のいずれでもよく、現像時間は、常温で10秒〜180秒間程度が好ましい。現像処理に続いて、例えば流水洗浄を30秒〜90秒間行った後、圧縮空気や圧縮窒素で風乾することによって所望のパターンが得られる。 The developing method may be any of a liquid filling method, a dipping method, a shower method, and the like, and the developing time is preferably about 10 seconds to 180 seconds at room temperature. Subsequent to the development processing, for example, washing with running water is performed for 30 seconds to 90 seconds, and then a desired pattern is obtained by air drying with compressed air or compressed nitrogen.
[工程(4)]
本工程では、得られたパターン状被膜をホットプレート、オーブン等の適当な加熱装置により焼成(ポストベーク)することにより層間絶縁膜を得る。焼成温度としては、100℃〜250℃が好ましく、150℃〜230℃がより好ましい。焼成時間としては、例えばホットプレート上では5分〜30分間、オーブンでは30分〜180分間が好ましい。当該組成物は、上述のように[D]有機溶媒を含有するため、かかる低い低温焼成を実現でき低温焼成が望まれるフレキシブルディスプレイ等に用いられる層間絶縁膜の形成材料として好適である。
[Step (4)]
In this step, the obtained interlayer film is baked (post-baked) with a suitable heating device such as a hot plate or oven to obtain an interlayer insulating film. As baking temperature, 100 to 250 degreeC is preferable and 150 to 230 degreeC is more preferable. The firing time is preferably, for example, 5 minutes to 30 minutes on a hot plate and 30 minutes to 180 minutes in an oven. Since the composition contains the organic solvent [D] as described above, it can be realized as a material for forming an interlayer insulating film used in a flexible display or the like that can achieve such low-temperature firing and is desired to be fired at low temperature.
<表示素子及びその製造方法>
本発明には当該層間絶縁膜を備える表示素子も好適に含まれる。本発明の表示素子は、例えば以下の方法により作製できる。
<Display element and manufacturing method thereof>
The display element provided with the said interlayer insulation film is also suitably contained in this invention. The display element of the present invention can be produced, for example, by the following method.
まず片面に透明導電膜(電極)を有する透明基板を一対(2枚)準備し、そのうちの一枚の基板の透明導電膜上に、当該組成物を用いて上述の方法に従って層間絶縁膜を形成し、また必要に応じてスペーサー、保護膜等を形成する。続いて液晶配向能を有する配向膜を形成し重畳する。これら基板を、その配向膜が形成された側の面を内側にして、それぞれの配向膜の液晶配向方向が直交又は逆平行となるように一定の間隙(セルギャップ)を介して対向配置し、基板の表面(配向膜)及びスペーサーにより区画されたセルギャップ内に液晶を充填し、充填孔を封止して液晶セルを構成する。そして、液晶セルの両外表面に、偏光板を、その偏光方向が当該基板の一面に形成された配向膜の液晶配向方向と一致又は直交するように貼り合わせることにより、本発明の表示素子が得られる。 First, a pair (two) of transparent substrates having a transparent conductive film (electrode) on one side is prepared, and an interlayer insulating film is formed on the transparent conductive film of one of the substrates using the composition according to the method described above. In addition, a spacer, a protective film or the like is formed as necessary. Subsequently, an alignment film having liquid crystal alignment ability is formed and superimposed. These substrates are arranged facing each other with a certain gap (cell gap) so that the liquid crystal alignment direction of each alignment film is orthogonal or antiparallel, with the surface on which the alignment film is formed inside. A liquid crystal is filled in the cell gap defined by the surface of the substrate (alignment film) and the spacer, and the filling hole is sealed to constitute a liquid crystal cell. Then, the display element of the present invention is bonded to both outer surfaces of the liquid crystal cell such that the polarizing direction is aligned or orthogonal to the liquid crystal alignment direction of the alignment film formed on one surface of the substrate. can get.
他の方法としては、上記方法と同様にして透明導電膜と、層間絶縁膜等と配向膜とを形成した一対の透明基板を準備する。その後一方の基板の端部に沿って、ディスペンサーを用いて紫外線硬化型シール剤を塗布し、次いで液晶ディスペンサーを用いて微小液滴状に液晶を滴下し、真空下で両基板の貼り合わせを行う。そして、上記のシール剤部に、高圧水銀ランプを用いて紫外線を照射して両基板を封止する。最後に、液晶セルの両外表面に偏光板を貼り合わせることにより、本発明の表示素子が得られる。 As another method, a pair of transparent substrates on which a transparent conductive film, an interlayer insulating film and the like and an alignment film are formed are prepared in the same manner as the above method. After that, along the edge of one substrate, an ultraviolet curable sealant is applied using a dispenser, and then the liquid crystal is dropped in the form of fine droplets using a liquid crystal dispenser, and the two substrates are bonded together under vacuum. . Then, both the substrates are sealed by irradiating the sealing agent part with ultraviolet rays using a high-pressure mercury lamp. Finally, the display element of the present invention is obtained by attaching polarizing plates to both outer surfaces of the liquid crystal cell.
上記の各方法において使用される液晶としては、例えばネマティック型液晶、スメクティック型液晶等が挙げられる。また、液晶セルの外側に使用される偏光板としては、ポリビニルアルコールを延伸配向させながら、ヨウ素を吸収させた「H膜」と呼ばれる偏光膜を酢酸セルロース保護膜で挟んだ偏光板、又はH膜そのものからなる偏光板等が挙げられる。 Examples of the liquid crystal used in each of the above methods include nematic liquid crystal and smectic liquid crystal. In addition, as a polarizing plate used outside the liquid crystal cell, a polarizing film in which a polarizing film called an “H film” that absorbs iodine while stretching and aligning polyvinyl alcohol is sandwiched between cellulose acetate protective films, or an H film Examples thereof include a polarizing plate made of itself.
以下、実施例に基づき本発明を詳述するが、この実施例に本発明が限定的に解釈されるものではない。 EXAMPLES Hereinafter, although this invention is explained in full detail based on an Example, this invention is not interpreted limitedly to this Example.
<[A]共重合体の合成>
[合成例1]
冷却管及び攪拌機を備えたフラスコに、2,2’−アゾビス−(2,4−ジメチルバレロニトリル)7質量部と3−メトキシプロピオン酸メチル200質量部とを仕込んだ。引き続き、(A1)メタクリル酸20質量部、(A2)メタクリル酸グリシジル10質量部、(A3)スチレン60質量部、(A4)メタクリル酸エチル10質量部及びα−メチルスチレンダイマー1質量部を仕込んで窒素置換した後、ゆるやかに撹拌を始めた。溶液の温度を70℃に上昇させ、この温度を4時間保持することによって共重合体(A−1)を含む重合体溶液を得た(固形分濃度=34.4質量%、Mw=10,000、Mw/Mn=2.4)。13C−NMR分析の結果、(A1)構造単位、(A2)構造単位、(A3)構造単位、(A4)構造単位の含有量はそれぞれ23モル%、7モル%、60モル%、10モル%であった。なお、1H−NMR、13C−NMR、FT−IR、熱分解ガスクロマトグラフィー質量分析により、含有量を求めた。
<Synthesis of [A] copolymer>
[Synthesis Example 1]
A flask equipped with a condenser and a stirrer was charged with 7 parts by mass of 2,2′-azobis- (2,4-dimethylvaleronitrile) and 200 parts by mass of methyl 3-methoxypropionate. Subsequently, (A1) 20 parts by mass of methacrylic acid, (A2) 10 parts by mass of glycidyl methacrylate, (A3) 60 parts by mass of styrene, (A4) 10 parts by mass of ethyl methacrylate and 1 part by mass of α-methylstyrene dimer were charged. After purging with nitrogen, stirring was started gently. The temperature of the solution was raised to 70 ° C., and this temperature was maintained for 4 hours to obtain a polymer solution containing the copolymer (A-1) (solid content concentration = 34.4% by mass, Mw = 10, 000, Mw / Mn = 2.4). As a result of 13 C-NMR analysis, the contents of (A1) structural unit, (A2) structural unit, (A3) structural unit, and (A4) structural unit were 23 mol%, 7 mol%, 60 mol%, and 10 mol, respectively. %Met. The content was determined by 1 H-NMR, 13 C-NMR, FT-IR, and pyrolysis gas chromatography mass spectrometry.
[合成例2]
冷却管及び攪拌機を備えたフラスコに、2,2’−アゾビス−(2,4−ジメチルバレロニトリル)7質量部と3−メトキシプロピオン酸メチル200質量部とを仕込んだ。引き続き、(A1)メタクリル酸20質量部、(A2)メタクリル酸グリシジル10質量部、(A3)スチレン50質量部、(A4)メタクリル酸エチル20質量部及びα−メチルスチレンダイマー1質量部を仕込んで窒素置換した後、ゆるやかに撹拌を始めた。溶液の温度を70℃に上昇させ、この温度を4時間保持することによって共重合体(A−2)を含む重合体溶液を得た(固形分濃度=34.3質量%、Mw=10,000、Mw/Mn=2.3)。合成例1と同様に分析した結果、(A1)構造単位、(A2)構造単位、(A3)構造単位、(A4)構造単位の含有量はそれぞれ24モル%、7モル%、50モル%、19モル%であった。
[Synthesis Example 2]
A flask equipped with a condenser and a stirrer was charged with 7 parts by mass of 2,2′-azobis- (2,4-dimethylvaleronitrile) and 200 parts by mass of methyl 3-methoxypropionate. Subsequently, (A1) 20 parts by mass of methacrylic acid, (A2) 10 parts by mass of glycidyl methacrylate, (A3) 50 parts by mass of styrene, (A4) 20 parts by mass of ethyl methacrylate and 1 part by mass of α-methylstyrene dimer were charged. After purging with nitrogen, stirring was started gently. The temperature of the solution was raised to 70 ° C., and this temperature was maintained for 4 hours to obtain a polymer solution containing the copolymer (A-2) (solid content concentration = 34.3 mass%, Mw = 10, 000, Mw / Mn = 2.3). As a result of analysis in the same manner as in Synthesis Example 1, the contents of (A1) structural unit, (A2) structural unit, (A3) structural unit, and (A4) structural unit were 24 mol%, 7 mol%, 50 mol%, respectively. It was 19 mol%.
[合成例3]
冷却管及び攪拌機を備えたフラスコに、2,2’−アゾビス−(2,4−ジメチルバレロニトリル)7質量部と3−メトキシプロピオン酸メチル200質量部とを仕込んだ。引き続き、(A1)メタクリル酸30質量部、(A2)メタクリル酸グリシジル10質量部、(A3)スチレン50質量部、(A4)メタクリル酸エチル10質量部及びα−メチルスチレンダイマー1質量部を仕込んで窒素置換した後、ゆるやかに撹拌を始めた。溶液の温度を70℃に上昇させ、この温度を4時間保持することによって共重合体(A−3)を含む重合体溶液を得た(固形分濃度=33.3質量%、Mw=11,000、Mw/Mn=2.4)。合成例1と同様に分析した結果、(A1)構造単位、(A2)構造単位、(A3)構造単位、(A4)構造単位の含有量はそれぞれ35モル%、7モル%、50モル%、8モル%であった。
[Synthesis Example 3]
A flask equipped with a condenser and a stirrer was charged with 7 parts by mass of 2,2′-azobis- (2,4-dimethylvaleronitrile) and 200 parts by mass of methyl 3-methoxypropionate. Subsequently, (A1) 30 parts by mass of methacrylic acid, (A2) 10 parts by mass of glycidyl methacrylate, (A3) 50 parts by mass of styrene, (A4) 10 parts by mass of ethyl methacrylate and 1 part by mass of α-methylstyrene dimer were charged. After purging with nitrogen, stirring was started gently. The temperature of the solution was raised to 70 ° C., and this temperature was maintained for 4 hours to obtain a polymer solution containing the copolymer (A-3) (solid content concentration = 33.3% by mass, Mw = 11, 000, Mw / Mn = 2.4). As a result of analysis in the same manner as in Synthesis Example 1, the contents of (A1) structural unit, (A2) structural unit, (A3) structural unit, and (A4) structural unit were 35 mol%, 7 mol%, 50 mol%, respectively. It was 8 mol%.
[合成例4]
冷却管及び攪拌機を備えたフラスコに、2,2’−アゾビス−(2,4−ジメチルバレロニトリル)7質量部と3−メトキシプロピオン酸メチル200質量部とを仕込んだ。引き続き、(A1)メタクリル酸25質量部、(A2)メタクリル酸グリシジル5質量部、(A3)スチレン50質量部、(A4)アクリル酸エチル20質量部及びα−メチルスチレンダイマー1質量部を仕込んで窒素置換した後、ゆるやかに撹拌を始めた。溶液の温度を70℃に上昇させ、この温度を4時間保持することによって共重合体(A−4)を含む重合体溶液を得た(固形分濃度=34.0質量%、Mw=9,000、Mw/Mn=2.3)。合成例1と同様に分析した結果、(A1)構造単位、(A2)構造単位、(A3)構造単位、(A4)構造単位の含有量はそれぞれ28モル%、4モル%、48モル%、20モル%であった。
[Synthesis Example 4]
A flask equipped with a condenser and a stirrer was charged with 7 parts by mass of 2,2′-azobis- (2,4-dimethylvaleronitrile) and 200 parts by mass of methyl 3-methoxypropionate. Subsequently, (A1) 25 parts by mass of methacrylic acid, (A2) 5 parts by mass of glycidyl methacrylate, (A3) 50 parts by mass of styrene, (A4) 20 parts by mass of ethyl acrylate and 1 part by mass of α-methylstyrene dimer were charged. After purging with nitrogen, stirring was started gently. The temperature of the solution was raised to 70 ° C., and this temperature was maintained for 4 hours to obtain a polymer solution containing the copolymer (A-4) (solid content concentration = 34.0% by mass, Mw = 9, 000, Mw / Mn = 2.3). As a result of analysis in the same manner as in Synthesis Example 1, the contents of (A1) structural unit, (A2) structural unit, (A3) structural unit, and (A4) structural unit were 28 mol%, 4 mol%, 48 mol%, It was 20 mol%.
[合成例5]
冷却管及び攪拌機を備えたフラスコに、2,2’−アゾビス−(2,4−ジメチルバレロニトリル)7質量部と3−メトキシプロピオン酸メチル200質量部とを仕込んだ。引き続き、(A1)メタクリル酸25質量部、(A2)メタクリル酸グリシジル5質量部、(A3)スチレン50質量部、(A4)メタクリル酸イソプロピル20質量部及びα−メチルスチレンダイマー1質量部を仕込んで窒素置換した後、ゆるやかに撹拌を始めた。溶液の温度を70℃に上昇させ、この温度を4時間保持することによって共重合体(A−5)を含む重合体溶液を得た(固形分濃度=34.0質量%、Mw=9,000、Mw/Mn=2.3)。合成例1と同様に分析した結果、(A1)構造単位、(A2)構造単位、(A3)構造単位、(A4)構造単位の含有量はそれぞれ30モル%、4モル%、51モル%、16モル%であった。
[Synthesis Example 5]
A flask equipped with a condenser and a stirrer was charged with 7 parts by mass of 2,2′-azobis- (2,4-dimethylvaleronitrile) and 200 parts by mass of methyl 3-methoxypropionate. Subsequently, (A1) 25 parts by mass of methacrylic acid, (A2) 5 parts by mass of glycidyl methacrylate, (A3) 50 parts by mass of styrene, (A4) 20 parts by mass of isopropyl methacrylate and 1 part by mass of α-methylstyrene dimer were charged. After purging with nitrogen, stirring was started gently. The temperature of the solution was raised to 70 ° C., and this temperature was maintained for 4 hours to obtain a polymer solution containing the copolymer (A-5) (solid content concentration = 34.0% by mass, Mw = 9, 000, Mw / Mn = 2.3). As a result of analysis in the same manner as in Synthesis Example 1, the contents of (A1) structural unit, (A2) structural unit, (A3) structural unit, and (A4) structural unit were 30 mol%, 4 mol%, and 51 mol%, respectively. It was 16 mol%.
[合成例6]
冷却管及び攪拌機を備えたフラスコに、2,2’−アゾビス−(2,4−ジメチルバレロニトリル)7質量部と3−メトキシプロピオン酸メチル200質量部とを仕込んだ。引き続き、(A1)メタクリル酸20質量部、(A2)3−エチル−3−メチルメタアクリレートオキセタン10質量部、(A3)スチレン50質量部、(A4)メタクリル酸エチル20質量部及びα−メチルスチレンダイマー1質量部を仕込んで窒素置換した後、ゆるやかに撹拌を始めた。溶液の温度を70℃に上昇させ、この温度を4時間保持することによって共重合体(A−6)を含む重合体溶液を得た(固形分濃度=32.3質量%、Mw=9,000、Mw/Mn=2.3)。合成例1と同様に分析した結果、(A1)構造単位、(A2)構造単位、(A3)構造単位、(A4)構造単位の含有量はそれぞれ25モル%、6モル%、50モル%、19モル%であった。
[Synthesis Example 6]
A flask equipped with a condenser and a stirrer was charged with 7 parts by mass of 2,2′-azobis- (2,4-dimethylvaleronitrile) and 200 parts by mass of methyl 3-methoxypropionate. Subsequently, (A1) 20 parts by mass of methacrylic acid, (A2) 10 parts by mass of 3-ethyl-3-methyl methacrylate oxetane, (A3) 50 parts by mass of styrene, (A4) 20 parts by mass of ethyl methacrylate and α-methylstyrene. After 1 part by weight of dimer was charged and purged with nitrogen, stirring was started gently. The temperature of the solution was raised to 70 ° C., and this temperature was maintained for 4 hours to obtain a polymer solution containing the copolymer (A-6) (solid content concentration = 32.3 mass%, Mw = 9, 000, Mw / Mn = 2.3). As a result of analysis in the same manner as in Synthesis Example 1, the contents of (A1) structural unit, (A2) structural unit, (A3) structural unit, and (A4) structural unit were 25 mol%, 6 mol%, 50 mol%, It was 19 mol%.
[合成例7]
冷却管及び攪拌機を備えたフラスコに、2,2’−アゾビス−(2,4−ジメチルバレロニトリル)7質量部と3−メトキシプロピオン酸メチル200質量部とを仕込んだ。引き続き、(A1)アクリル酸18質量部、(A2)メタクリル酸3,4−エポキシシクロヘキシルメチル12質量部、(A3)スチレン50質量部、(A4)メタクリル酸エチル20質量部及びα−メチルスチレンダイマー1質量部を仕込んで窒素置換した後、ゆるやかに撹拌を始めた。溶液の温度を70℃に上昇させ、この温度を4時間保持することによって共重合体(A−7)を含む重合体溶液を得た(固形分濃度=32.3質量%、Mw=8,000、Mw/Mn=2.3)。合成例1と同様に分析した結果、(A1)構造単位、(A2)構造単位、(A3)構造単位、(A4)構造単位の含有量はそれぞれ29モル%、9モル%、38モル%、24モル%であった。
[Synthesis Example 7]
A flask equipped with a condenser and a stirrer was charged with 7 parts by mass of 2,2′-azobis- (2,4-dimethylvaleronitrile) and 200 parts by mass of methyl 3-methoxypropionate. Subsequently, (A1) 18 parts by mass of acrylic acid, (A2) 12 parts by mass of 3,4-epoxycyclohexylmethyl methacrylate, (A3) 50 parts by mass of styrene, (A4) 20 parts by mass of ethyl methacrylate and α-methylstyrene dimer. After 1 part by mass was charged and replaced with nitrogen, stirring was started gently. The temperature of the solution was raised to 70 ° C., and this temperature was maintained for 4 hours to obtain a polymer solution containing the copolymer (A-7) (solid content concentration = 32.3 mass%, Mw = 8, 000, Mw / Mn = 2.3). As a result of analysis in the same manner as in Synthesis Example 1, the contents of (A1) structural unit, (A2) structural unit, (A3) structural unit, and (A4) structural unit were 29 mol%, 9 mol%, 38 mol%, It was 24 mol%.
[合成例8]
冷却管及び攪拌機を備えたフラスコに、2,2’−アゾビス−(2,4−ジメチルバレロニトリル)7質量部と3−メトキシプロピオン酸メチル200質量部とを仕込んだ。引き続き、(A1)メタクリル酸20質量部、(A2)メタクリル酸グリシジル10質量部、(A3)スチレン30質量部、(A4)メタクリル酸エチル20質量部、(A5)N−フェニルマレイミド20質量部及びα−メチルスチレンダイマー1質量部を仕込んで窒素置換した後、ゆるやかに撹拌を始めた。溶液の温度を70℃に上昇させ、この温度を4時間保持することによって共重合体(A−8)を含む重合体溶液を得た(固形分濃度=34.0質量%、Mw=9,000、Mw/Mn=2.1)。合成例1と同様に分析した結果、(A1)構造単位、(A2)構造単位、(A3)構造単位、(A4)構造単位、(A5)構造単位の含有量はそれぞれ26モル%、8モル%、33モル%、20モル%、13モル%であった。
[Synthesis Example 8]
A flask equipped with a condenser and a stirrer was charged with 7 parts by mass of 2,2′-azobis- (2,4-dimethylvaleronitrile) and 200 parts by mass of methyl 3-methoxypropionate. Subsequently, (A1) 20 parts by mass of methacrylic acid, (A2) 10 parts by mass of glycidyl methacrylate, (A3) 30 parts by mass of styrene, (A4) 20 parts by mass of ethyl methacrylate, (A5) 20 parts by mass of N-phenylmaleimide and After 1 part by mass of α-methylstyrene dimer was charged and purged with nitrogen, stirring was started gently. The temperature of the solution was raised to 70 ° C., and this temperature was maintained for 4 hours to obtain a polymer solution containing the copolymer (A-8) (solid content concentration = 34.0% by mass, Mw = 9, 000, Mw / Mn = 2.1). As a result of analysis in the same manner as in Synthesis Example 1, the contents of (A1) structural unit, (A2) structural unit, (A3) structural unit, (A4) structural unit, and (A5) structural unit were 26 mol% and 8 mol, respectively. %, 33 mol%, 20 mol%, and 13 mol%.
[合成例9]
冷却管及び攪拌機を備えたフラスコに、2,2’−アゾビス−(2,4−ジメチルバレロニトリル)7質量部と3−メトキシプロピオン酸メチル200質量部とを仕込んだ。引き続き、(A1)メタクリル酸30質量部、(A2)メタクリル酸グリシジル10質量部、(A3)スチレン40質量部、(A4)メタクリル酸エチル10質量部、その他の成分としてメタクリル酸メチル10質量部及びα−メチルスチレンダイマー1質量部を仕込んで窒素置換した後、ゆるやかに撹拌を始めた。溶液の温度を70℃に上昇させ、この温度を4時間保持することによって共重合体(A−9)を含む重合体溶液を得た(固形分濃度=33.3質量%、Mw=12,000、Mw/Mn=2.5)。合成例1と同様にして分析した結果、(A1)構造単位、(A2)構造単位、(A3)構造単位、(A4)構造単位、メタクリル酸メチルに由来する構造単位の含有量はそれぞれ35モル%、7モル%、39モル%、9モル%、10モル%であった。
[Synthesis Example 9]
A flask equipped with a condenser and a stirrer was charged with 7 parts by mass of 2,2′-azobis- (2,4-dimethylvaleronitrile) and 200 parts by mass of methyl 3-methoxypropionate. Subsequently, (A1) 30 parts by weight of methacrylic acid, (A2) 10 parts by weight of glycidyl methacrylate, (A3) 40 parts by weight of styrene, (A4) 10 parts by weight of ethyl methacrylate, 10 parts by weight of methyl methacrylate as other components, and After 1 part by mass of α-methylstyrene dimer was charged and purged with nitrogen, stirring was started gently. The temperature of the solution was raised to 70 ° C., and this temperature was maintained for 4 hours to obtain a polymer solution containing the copolymer (A-9) (solid content concentration = 33.3% by mass, Mw = 12, 000, Mw / Mn = 2.5). As a result of analysis in the same manner as in Synthesis Example 1, the content of (A1) structural unit, (A2) structural unit, (A3) structural unit, (A4) structural unit, and structural unit derived from methyl methacrylate was 35 mol each. %, 7 mol%, 39 mol%, 9 mol%, and 10 mol%.
[比較合成例1]
冷却管及び攪拌機を備えたフラスコに、2,2’−アゾビス−(2,4−ジメチルバレロニトリル)7質量部とプロピレングリコールモノメチルエーテルアセテート200質量部とを仕込んだ。引き続き、(A1)メタクリル酸30質量部、(A3)スチレン60質量部、(A4)メタクリル酸エチル10質量部及びα−メチルスチレンダイマー1質量部を仕込んで窒素置換した後、ゆるやかに撹拌を始めた。溶液の温度を70℃に上昇させ、この温度を4時間保持することによって共重合体(CA−1)を含む重合体溶液を得た(固形分濃度=34.5質量%、Mw=9,000、Mw/Mn=2.3)。合成例1と同様に分析した結果、(A1)構造単位、(A3)構造単位、(A4)構造単位の含有量はそれぞれ34モル%、57モル%、9モル%であった。
[Comparative Synthesis Example 1]
A flask equipped with a condenser and a stirrer was charged with 7 parts by mass of 2,2′-azobis- (2,4-dimethylvaleronitrile) and 200 parts by mass of propylene glycol monomethyl ether acetate. Subsequently, (A1) 30 parts by mass of methacrylic acid, (A3) 60 parts by mass of styrene, (A4) 10 parts by mass of ethyl methacrylate and 1 part by mass of α-methylstyrene dimer were charged with nitrogen, and then gently stirred. It was. The temperature of the solution was raised to 70 ° C., and this temperature was maintained for 4 hours to obtain a polymer solution containing the copolymer (CA-1) (solid content concentration = 34.5% by mass, Mw = 9, 000, Mw / Mn = 2.3). As a result of analysis in the same manner as in Synthesis Example 1, the contents of (A1) structural unit, (A3) structural unit, and (A4) structural unit were 34 mol%, 57 mol%, and 9 mol%, respectively.
[比較合成例2]
冷却管及び攪拌機を備えたフラスコに、2,2’−アゾビス−(2,4−ジメチルバレロニトリル)7質量部と3−メトキシプロピオン酸メチル200質量部とを仕込んだ。引き続き、(A1)メタクリル酸25質量部、(A2)メタクリル酸グリシジル5質量部、(A3)スチレン50質量部、メタクリル酸メチル20質量部及びα−メチルスチレンダイマー1質量部を仕込んで窒素置換した後、ゆるやかに撹拌を始めた。溶液の温度を70℃に上昇させ、この温度を4時間保持することによって共重合体(CA−2)を含む重合体溶液を得た(固形分濃度=35.4質量%、Mw=15,000、Mw/Mn=2.4)。合成例1と同様にして分析した結果、(A1)構造単位、(A2)構造単位、(A3)構造単位、メタクリル酸メチルに由来する構造単位の含有量はそれぞれ30モル%、4モル%、49モル%、17モル%であった。
[Comparative Synthesis Example 2]
A flask equipped with a condenser and a stirrer was charged with 7 parts by mass of 2,2′-azobis- (2,4-dimethylvaleronitrile) and 200 parts by mass of methyl 3-methoxypropionate. Subsequently, (A1) 25 parts by mass of methacrylic acid, (A2) 5 parts by mass of glycidyl methacrylate, (A3) 50 parts by mass of styrene, 20 parts by mass of methyl methacrylate, and 1 part by mass of α-methylstyrene dimer were charged and replaced with nitrogen. After that, stirring was started gently. The temperature of the solution was raised to 70 ° C., and this temperature was maintained for 4 hours to obtain a polymer solution containing the copolymer (CA-2) (solid content concentration = 35.4 mass%, Mw = 15, 000, Mw / Mn = 2.4). As a result of analysis in the same manner as in Synthesis Example 1, the contents of (A1) structural unit, (A2) structural unit, (A3) structural unit, and structural unit derived from methyl methacrylate were 30 mol%, 4 mol%, They were 49 mol% and 17 mol%.
[比較合成例3]
冷却管及び攪拌機を備えたフラスコに、2,2’−アゾビス−(2,4−ジメチルバレロニトリル)7質量部とプロピレングリコールモノメチルエーテルアセテート200質量部とを仕込んだ。引き続き、(A1)メタクリル酸45質量部、(A2)メタクリル酸グリシジル5質量部、(A3)スチレン40質量部、(A4)メタクリル酸エチル10質量部及びα−メチルスチレンダイマー1質量部を仕込んで窒素置換した後、ゆるやかに撹拌を始めた。溶液の温度を70℃に上昇させ、この温度を4時間保持することによって共重合体(CA−3)を含む重合体溶液を得た(固形分濃度=34.4質量%、Mw=20、000、Mw/Mn=2.6)。合成例1と同様にして分析した結果、(A1)構造単位、(A2)構造単位、(A3)構造単位、(A4)構造単位に由来する構造単位の含有量はそれぞれ51モル%、3モル%、37モル%、9モル%であった。
[Comparative Synthesis Example 3]
A flask equipped with a condenser and a stirrer was charged with 7 parts by mass of 2,2′-azobis- (2,4-dimethylvaleronitrile) and 200 parts by mass of propylene glycol monomethyl ether acetate. Subsequently, (A1) 45 parts by weight of methacrylic acid, (A2) 5 parts by weight of glycidyl methacrylate, (A3) 40 parts by weight of styrene, (A4) 10 parts by weight of ethyl methacrylate and 1 part by weight of α-methylstyrene dimer were charged. After purging with nitrogen, stirring was started gently. The temperature of the solution was raised to 70 ° C., and this temperature was maintained for 4 hours to obtain a polymer solution containing a copolymer (CA-3) (solid content concentration = 34.4% by mass, Mw = 20, 000, Mw / Mn = 2.6). As a result of analysis in the same manner as in Synthesis Example 1, the contents of (A1) structural unit, (A2) structural unit, (A3) structural unit, and (A4) structural unit derived from the structural unit were 51 mol% and 3 mol, respectively. %, 37 mol%, and 9 mol%.
[比較合成例4]
冷却管及び攪拌機を備えたフラスコに、2,2’−アゾビス−(2,4−ジメチルバレロニトリル)7質量部とジエチレングリコールメチルエチルエーテル200質量部とを仕込んだ。引き続き、(A1)メタクリル酸12質量部、(A2)メタクリル酸グリシジル5質量部、(A3)スチレン78質量部、(A4)メタクリル酸エチル5質量部及びα−メチルスチレンダイマー1質量部を仕込んで窒素置換した後、ゆるやかに撹拌を始めた。溶液の温度を70℃に上昇させ、この温度を4時間保持することによって共重合体(CA−4)を含む重合体溶液を得た(固形分濃度=35.0質量%、Mw=9,000、Mw/Mn=2.1)。合成例1と同様にして分析した結果、(A1)構造単位、(A2)構造単位、(A3)構造単位、(A4)構造単位に由来する構造単位の含有量はそれぞれ14モル%、4モル%、77モル%、5モル%であった。
[Comparative Synthesis Example 4]
A flask equipped with a condenser and a stirrer was charged with 7 parts by mass of 2,2′-azobis- (2,4-dimethylvaleronitrile) and 200 parts by mass of diethylene glycol methyl ethyl ether. Subsequently, (A1) 12 parts by mass of methacrylic acid, (A2) 5 parts by mass of glycidyl methacrylate, (A3) 78 parts by mass of styrene, (A4) 5 parts by mass of ethyl methacrylate and 1 part by mass of α-methylstyrene dimer were charged. After purging with nitrogen, stirring was started gently. The temperature of the solution was raised to 70 ° C., and this temperature was maintained for 4 hours to obtain a polymer solution containing the copolymer (CA-4) (solid content concentration = 35.0 mass%, Mw = 9, 000, Mw / Mn = 2.1). As a result of analysis in the same manner as in Synthesis Example 1, the content of (A1) structural unit, (A2) structural unit, (A3) structural unit, and (A4) structural unit derived from the structural unit was 14 mol% and 4 mol, respectively. %, 77 mol%, and 5 mol%.
[比較合成例5]
冷却管及び攪拌機を備えたフラスコに、2,2’−アゾビス−(2,4−ジメチルバレロニトリル)7質量部と3−メトキシプロピオン酸メチル200質量部とを仕込んだ。引き続き、(A1)メタクリル酸20質量部、(A2)メタクリル酸グリシジル5質量部、(A3)スチレン30質量部、(A4)メタクリル酸エチル45質量部及びα−メチルスチレンダイマー1質量部を仕込んで窒素置換した後、ゆるやかに撹拌を始めた。溶液の温度を70℃に上昇させ、この温度を4時間保持することによって共重合体(CA−5)を含む重合体溶液を得た(固形分濃度=35.1質量%、Mw=17,000、Mw/Mn=2.2)。合成例1と同様にして分析した結果、(A1)構造単位、(A2)構造単位、(A3)構造単位、(A4)構造単位に由来する構造単位の含有量はそれぞれ24モル%、4モル%、30モル%、42モル%であった。
[Comparative Synthesis Example 5]
A flask equipped with a condenser and a stirrer was charged with 7 parts by mass of 2,2′-azobis- (2,4-dimethylvaleronitrile) and 200 parts by mass of methyl 3-methoxypropionate. Subsequently, (A1) 20 parts by mass of methacrylic acid, (A2) 5 parts by mass of glycidyl methacrylate, (A3) 30 parts by mass of styrene, (A4) 45 parts by mass of ethyl methacrylate and 1 part by mass of α-methylstyrene dimer were charged. After purging with nitrogen, stirring was started gently. The temperature of the solution was raised to 70 ° C., and this temperature was maintained for 4 hours to obtain a polymer solution containing a copolymer (CA-5) (solid content concentration = 35.1% by mass, Mw = 17, 000, Mw / Mn = 2.2). As a result of analysis in the same manner as in Synthesis Example 1, the content of (A1) structural unit, (A2) structural unit, (A3) structural unit, and (A4) structural unit derived from the structural unit was 24 mol% and 4 mol, respectively. %, 30 mol%, and 42 mol%.
<感放射線性樹脂組成物の調製>
[実施例1]
[A]共重合体としての(A−1)を含有する溶液に、(A−1)100質量部(固形分)に相当する量に対して、[B]重合性不飽和化合物としての(B−1)25質量部、(B−8)25質量部、[C]感放射線性重合開始剤としての(C−1)5質量部、任意成分としての[E]密着助剤(E−1)1質量部及び(E−2)1質量部、[F]界面活性剤(F−1)0.10質量部並びに[G]重合禁止剤(G−1)p−メトキシフェノール0.1質量部を混合し、固形分濃度が30質量%となるように[D]有機溶媒としてのメチル−3−メトキシプロピオネートに溶解させた後、孔径0.2μmのメンブランフィルタで濾過して、感放射線性樹脂組成物(S−1)を調製した。
<Preparation of radiation-sensitive resin composition>
[Example 1]
[A] In a solution containing (A-1) as a copolymer, (A-1) with respect to an amount corresponding to 100 parts by mass (solid content), [B] B-1) 25 parts by mass, (B-8) 25 parts by mass, [C] 5 parts by mass as a radiation-sensitive polymerization initiator, and [E] adhesion assistant as an optional component (E- 1) 1 part by mass and (E-2) 1 part by mass, [F] surfactant (F-1) 0.10 part by mass and [G] polymerization inhibitor (G-1) p-methoxyphenol 0.1 After mixing parts by mass and dissolving in methyl-3-methoxypropionate as an organic solvent [D] so that the solid content concentration is 30% by mass, it is filtered through a membrane filter having a pore size of 0.2 μm, A radiation sensitive resin composition (S-1) was prepared.
[実施例2〜23及び比較例1〜6]
表1に示す種類、量の[A]共重合体、[B]重合性不飽和化合物、[C]感放射線性重合開始剤、[D]有機溶媒及び任意成分を使用した以外は実施例1と同様に操作し、感放射線性樹脂組成物(S−2)〜(S−23)及び(CS−1)〜(CS−6)を調製した。
[Examples 2 to 23 and Comparative Examples 1 to 6]
Example 1 except that the types and amounts of [A] copolymer, [B] polymerizable unsaturated compound, [C] radiation sensitive polymerization initiator, [D] organic solvent and optional components shown in Table 1 were used. In the same manner as described above, radiation-sensitive resin compositions (S-2) to (S-23) and (CS-1) to (CS-6) were prepared.
実施例及び比較例で用いた各成分の詳細を示す。 The detail of each component used by the Example and the comparative example is shown.
<[B]重合性不飽和化合物>
(B−1)〜(B−5)ヒドロキシル基又はカルボキシル基を有する重合性不飽和化合物
B−1:コハク酸変性ペンタエリスリトールトリアクリレート(東亞合成社、アロニックスTO−756)
B−2:コハク酸変性ジペンタエリスリトールペンタアクリレート(東亞合成社、アロニックス M−520)
B−3:ω−カルボキシ−ポリカプロラクトンモノアクリレート
B−4:ペンタエリスリトールトリアクリレートとペンタエリスリトールテトラアクリレートとの混合物(ペンタエリスリトールトリアクリレート含有量約60%)(新中村化学工業社、NKエステル A−TMM−3LM−N)
B−5:ジペンタエリスリトールペンタアクリレートとジペンタアリスリトールヘキサアクリレートとの混合物(ジペンタエリスリトールペンタアクリレート含有量50%)(新中村化学工業社、NKエステル A−9550)
(B−6)〜(B−9)ヒドロキシル基、カルボキシル基をいずれも有さない重合性不飽和化合物
B−6:トリメチロールプロパントリアクリレート(新中村化学工業社、NKエステル A−TMPT)
B−7:ペンタエリスリトールテトラアクリレート(新中村化学工業社、NKエステル A−TMMT)
B−8:ジペンタエリスリトールペンタアクリレートとジペンタエリスリトールヘキサアクリレートの混合物(ジペンタエリスリトールヘキサアクリレート含有量90%)(新中村化学工業社、NKエステル A−DPH)
B−9:多官能ウレタンアクリレート系化合物を含有する重合性不飽和単量体(日本化薬社、KAYARAD DPHA−40H)
<[B] polymerizable unsaturated compound>
(B-1) to (B-5) Polymerizable unsaturated compound B-1 having hydroxyl group or carboxyl group: Succinic acid-modified pentaerythritol triacrylate (Toagosei Co., Aronix TO-756)
B-2: Succinic acid-modified dipentaerythritol pentaacrylate (Toagosei Co., Aronix M-520)
B-3: ω-carboxy-polycaprolactone monoacrylate B-4: a mixture of pentaerythritol triacrylate and pentaerythritol tetraacrylate (pentaerythritol triacrylate content of about 60%) (Shin Nakamura Chemical Co., Ltd., NK Ester A- TMM-3LM-N)
B-5: Mixture of dipentaerythritol pentaacrylate and dipentaerythritol hexaacrylate (dipentaerythritol pentaacrylate content 50%) (Shin Nakamura Chemical Co., Ltd., NK ester A-9550)
(B-6) to (B-9) Polymerizable unsaturated compound B-6 having neither hydroxyl group nor carboxyl group: Trimethylolpropane triacrylate (Shin Nakamura Chemical Co., Ltd., NK Ester A-TMPT)
B-7: Pentaerythritol tetraacrylate (Shin Nakamura Chemical Co., Ltd., NK Ester A-TMMT)
B-8: Mixture of dipentaerythritol pentaacrylate and dipentaerythritol hexaacrylate (dipentaerythritol hexaacrylate content 90%) (Shin Nakamura Chemical Co., Ltd., NK ester A-DPH)
B-9: A polymerizable unsaturated monomer containing a polyfunctional urethane acrylate compound (Nippon Kayaku Co., Ltd., KAYARAD DPHA-40H)
<[C]感放射線性重合開始剤>
C−1:エタノン−1−〔9−エチル−6−(2−メチルベンゾイル)−9H−カルバゾール−3−イル〕−1−(O−アセチルオキシム)(チバ・スペシャルティー・ケミカルズ社、イルガキュアOXE02)
C−2:1−〔4−(フェニルチオ)−2−(O−ベンゾイルオキシム)〕(チバ・スペシャルティー・ケミカルズ社、イルガキュアOXE01)
C−3:ビス(2,4,6トリメチルベンゾイル)−フェニルフォスフィンオキサイド(チバ・スペシャルティー・ケミカルズ社、イルガキュア819)
C−4:2−メチル−1−(4−メチルチオフェニル)−2−モルフォリノプロパン−1−オン(チバ・スペシャルティー・ケミカルズ社、イルガキュア907)
<[C] Radiation sensitive polymerization initiator>
C-1: Ethanone-1- [9-ethyl-6- (2-methylbenzoyl) -9H-carbazol-3-yl] -1- (O-acetyloxime) (Ciba Specialty Chemicals, Irgacure OXE02 )
C-2: 1- [4- (phenylthio) -2- (O-benzoyloxime)] (Ciba Specialty Chemicals, Irgacure OXE01)
C-3: Bis (2,4,6 trimethylbenzoyl) -phenylphosphine oxide (Ciba Specialty Chemicals, Irgacure 819)
C-4: 2-methyl-1- (4-methylthiophenyl) -2-morpholinopropan-1-one (Ciba Specialty Chemicals, Irgacure 907)
<[D]有機溶媒>
D−1:3−メトキシプロピオン酸メチル
D−2:3−メトキシプロピオン酸エチル
D−3:プロピレングリコールモノメトキシアセテート
D−4:ジエチレングリコールメチルエチルエーテル
<[D] Organic solvent>
D-1: Methyl 3-methoxypropionate D-2: Ethyl 3-methoxypropionate D-3: Propylene glycol monomethoxyacetate D-4: Diethylene glycol methyl ethyl ether
<[E]密着助剤>
E−1:γ−グリシドキシプロピルトリメトキシシラン(チッソ社、S−510)
E−2:アクリル酸2−(2−ビニロキシエトキシ)エチル(日本触媒社、VEEA)
<[E] Adhesion aid>
E-1: γ-Glycidoxypropyltrimethoxysilane (Chisso Corporation, S-510)
E-2: 2- (2-vinyloxyethoxy) ethyl acrylate (Nippon Shokubai, VEEA)
<[F]界面活性剤>
F−1:シリコーン系界面活性剤(東レ・ダウコーニング・シリコーン社、SH28PA)
F−2:フッ素系界面活性剤(ネオス社、フタージェント710F)
<[F] Surfactant>
F-1: Silicone surfactant (Toray Dow Corning Silicone, SH28PA)
F-2: Fluorine-based surfactant (Neos, Footage 710F)
<[G]重合禁止剤>
G−1:p−メトキシフェノール(和光純薬工業社、p−メトキシフェノール)
<[G] Polymerization inhibitor>
G-1: p-methoxyphenol (Wako Pure Chemical Industries, p-methoxyphenol)
<層間絶縁膜の物性評価>
上記のように調製した感放射線性樹脂組成物から以下のように層間絶縁膜を形成し、物性を評価した。結果を表1にあわせて示す。
<Evaluation of physical properties of interlayer insulation film>
An interlayer insulating film was formed from the radiation-sensitive resin composition prepared as described above, and the physical properties were evaluated. The results are shown in Table 1.
[感度]
シリコン基板上にスピンナーを用いて感放射線性樹脂組成物(S−1)〜(S−20)及び(CS−1)〜(CS−3)をそれぞれ塗布した後、100℃にて2分間ホットプレート上でプレベークして膜厚4.0μmの塗膜を形成した。次いで、露光機(超高圧水銀ランプ、キヤノン社、PLA−501F)を用い、露光時間を変化させて所定のパターンを有するパターンマスクを介して塗膜に露光を行った。次いで、0.4質量%の濃度のテトラメチルアンモニウムヒドロキシド水溶液(現像液)を用い、液盛り法によって25℃で現像処理を行った。現像処理の時間は100秒であった。現像処理後、超純水で1分間、塗膜の流水洗浄を行い、乾燥させてウエハー上にパターンを形成した。このシリコン基板をクリーンオーブン内にて220℃で1時間加熱して層間絶縁膜を得た。得られた硬化膜の膜厚を触針式膜厚計を用いて測定した。
下記式で表される残膜率(パターン状薄膜が適正に残存する比率)が85%以上になる露光量を感度として求め、800J/m2未満の場合をA、800J/m2以上1,000J/m2未満の場合をB、1,000J/m2以上〜1,200J/m2未満の場合をC、1,200J/m2以上の場合をDとした。
[sensitivity]
After applying the radiation sensitive resin compositions (S-1) to (S-20) and (CS-1) to (CS-3) on a silicon substrate using a spinner, hot at 100 ° C. for 2 minutes. Pre-baked on the plate to form a coating film having a thickness of 4.0 μm. Next, using a light exposure machine (extra-high pressure mercury lamp, Canon Inc., PLA-501F), the coating film was exposed through a pattern mask having a predetermined pattern while changing the exposure time. Next, a development process was performed at 25 ° C. by a liquid piling method using a tetramethylammonium hydroxide aqueous solution (developer) having a concentration of 0.4% by mass. The development processing time was 100 seconds. After the development treatment, the coating film was washed with running ultrapure water for 1 minute and dried to form a pattern on the wafer. This silicon substrate was heated in a clean oven at 220 ° C. for 1 hour to obtain an interlayer insulating film. The film thickness of the obtained cured film was measured using a stylus type film thickness meter.
The exposure amount at which the remaining film ratio represented by the following formula (ratio in which the patterned thin film remains properly) is 85% or more is obtained as sensitivity, and when the sensitivity is less than 800 J / m 2 , A, 800 J / m 2 or more, 1, B in the case of less than 000J / m 2, 1,000J / m 2 or more ~1,200J / m 2 less than the case C, 1,200J / m 2 or more when set to D.
[解像性]
上記の様に形成された層間絶縁膜に形成された貫通するホールの最小径を光学顕微鏡にて観察し、この最小径が、5〜10μmの場合をA、10〜20μmの場合をB、20μm以上の場合をC、ホールができない場合をDとした。
[Resolution]
The minimum diameter of the through-hole formed in the interlayer insulating film formed as described above is observed with an optical microscope, and when the minimum diameter is 5 to 10 μm, A, when the minimum diameter is 10 to 20 μm, B and 20 μm The above case was designated as C, and the case where no hole was formed was designated as D.
[残渣]
上記の様に形成された層間絶縁膜の10×10μmのホールを光学顕微鏡にて観察し、残渣の程度を評価した。残渣が確認できない場合をA、わずかに残渣が確認できる場合をB、残渣をはっきりと確認できる場合をC、残渣が大量に確認できる場合をDとした。
[Residue]
A 10 × 10 μm hole in the interlayer insulating film formed as described above was observed with an optical microscope, and the degree of residue was evaluated. The case where the residue could not be confirmed was designated as A, the case where the residue could be confirmed slightly, B, the case where the residue could be confirmed clearly, C, and the case where the residue could be confirmed in large quantities as D.
[ムラ]
上記の様に形成された層間絶縁膜の外観を目視にて観察した。ムラが確認できない場合をA、わずかにムラが確認できる場合をB、ムラが多く確認できる場合をC、全面にムラが確認できる場合をDとした。
[village]
The appearance of the interlayer insulating film formed as described above was visually observed. The case where unevenness could not be confirmed was indicated as A, the case where slight unevenness was confirmed as B, the case where much unevenness was confirmed as C, and the case where unevenness could be confirmed over the entire surface as D.
[透明性]
上記層間絶縁膜の形成において、シリコン基板の代わりにガラス基板(コーニング7059、コーニング社)を用いたこと以外は同様に操作して、ガラス基板上に層間絶縁膜を形成した。分光光度計(150−20型ダブルビーム、日立製作所社)を用いて、層間絶縁膜を有するガラス基板の光線透過率(%)を400〜800nmの範囲の波長で測定した。最低光線透過率が、95%を超える場合をA、90%以上95%以下の場合をB、90%未満85%以上の場合をC、85%未満の場合をDとした。
[transparency]
In the formation of the interlayer insulating film, an interlayer insulating film was formed on the glass substrate in the same manner except that a glass substrate (Corning 7059, Corning) was used instead of the silicon substrate. Using a spectrophotometer (150-20 type double beam, Hitachi, Ltd.), the light transmittance (%) of the glass substrate having the interlayer insulating film was measured at a wavelength in the range of 400 to 800 nm. The case where the minimum light transmittance exceeded 95% was A, the case where it was 90% or more and 95% or less was B, the case where it was less than 90% and 85% or more was C, and the case where it was less than 85% was D.
[耐熱透明性]
上記透明性の評価で作成した基板を、さらにクリーンオーブン中にて250℃で1時間加熱し、加熱前後の光線透過率を上記透明性評価と同様に操作して測定した。下記式に従って耐熱透明性(%)を算出し、この値が4%以下のとき保護膜の耐熱透明性は良好と判断できる。
耐熱透明性(%)=加熱前の光線透過率(%)−加熱後の光線透過率(%)
[Heat resistant transparency]
The substrate prepared by the above-described transparency evaluation was further heated at 250 ° C. for 1 hour in a clean oven, and the light transmittance before and after heating was measured in the same manner as in the above-described transparency evaluation. Heat resistance transparency (%) is calculated according to the following formula. When this value is 4% or less, it can be judged that the heat resistance transparency of the protective film is good.
Heat-resistant transparency (%) = light transmittance before heating (%) − light transmittance after heating (%)
[現像密着性]
上記層間絶縁膜の形成と同様に操作して塗膜を形成し、2,000J/m2で露光し、L/S=1:1のパターンにおいて、現像後に剥離せずに残る最小サイズを光学顕微鏡にて観察した。最小サイズが30μm未満をA、30μm以上50μm未満をB、50μm以上をC、すべて剥離したものをDとした。
[Development adhesion]
In the same manner as the formation of the interlayer insulating film, a coating film is formed, exposed at 2,000 J / m 2 , and in the pattern of L / S = 1: 1, the minimum size remaining without being peeled after development is optical. Observed with a microscope. A minimum size of less than 30 μm was A, 30 μm or more and less than 50 μm was B, 50 μm or more was C, and D was a peeled piece.
[比誘電率]
研磨したSUS304製基板上にスピンナーを用いて感放射線性樹脂組成物(S−1)〜(S−20)及び(CS−1)〜(CS−3)をそれぞれ塗布した後、100℃にて2分間ホットプレート上でプレベークして膜厚3.0μmの塗膜を形成した。次いで、露光機(超高圧水銀ランプ、キヤノン社、PLA−501F)を用い、積算照射量が3,000J/m2となるように塗膜に対して露光を行い、このシリコン基板をクリーンオーブン内にて220℃で1時間加熱して、膜厚3.0μmの層間絶縁膜を形成した。蒸着法により、この層間絶縁膜についてのPt/Pd電極パターンを作成し、比誘電率測定用サンプルとした。電極(横河・ヒューレットパッカード社、HP16451B)及びHP4284AプレシジョンLCRメーターを用いて、周波数10kHzの周波数で、CV法により基板の比誘電率を測定した。比誘電率が3.5未満のものをA、3.5以上3.8未満のものをB、3.8以上4.1未満のものをC、4.1以上のものをDとした。
[Relative permittivity]
After applying the radiation sensitive resin compositions (S-1) to (S-20) and (CS-1) to (CS-3) on a polished SUS304 substrate using a spinner, at 100 ° C. Prebaked on a hot plate for 2 minutes to form a coating film having a thickness of 3.0 μm. Next, using an exposure machine (extra-high pressure mercury lamp, Canon Inc., PLA-501F), the coating film is exposed so that the integrated irradiation amount is 3,000 J / m 2, and this silicon substrate is placed in a clean oven. Was heated at 220 ° C. for 1 hour to form an interlayer insulating film having a thickness of 3.0 μm. A Pt / Pd electrode pattern for this interlayer insulating film was prepared by a vapor deposition method, and used as a sample for measuring relative permittivity. The relative dielectric constant of the substrate was measured by the CV method at a frequency of 10 kHz using an electrode (Yokogawa Hewlett-Packard Company, HP16451B) and an HP4284A Precision LCR meter. A sample having a relative dielectric constant of less than 3.5 was designated as A, a sample having a relative dielectric constant of 3.5 or more and less than 3.8 was designated as B, a sample having a relative dielectric constant of 3.8 or more and less than 4.1 was designated as C, and a sample having 4.1
表1から明らかなように本発明の組成物は良好な感度及び解像性を有することがわかった。また、当該組成物から形成された層間絶縁膜は残渣、ムラが少なく、透明性、耐熱透明性、現像密着性及び比誘電率に優れることがわかった。 As is apparent from Table 1, the composition of the present invention was found to have good sensitivity and resolution. Further, it was found that the interlayer insulating film formed from the composition has little residue and unevenness, and is excellent in transparency, heat-resistant transparency, development adhesion, and relative dielectric constant.
本発明は感度及び解像性に優れる感放射線性樹脂組成物、並びにムラが少なく、透明性、現像密着性、比誘電率等に優れる層間絶縁膜を提供できる。従って、かかる層間絶縁膜は表示素子に好適に用いられる。 The present invention can provide a radiation-sensitive resin composition excellent in sensitivity and resolution, and an interlayer insulating film with less unevenness and excellent transparency, development adhesion, relative dielectric constant, and the like. Therefore, such an interlayer insulating film is suitably used for a display element.
Claims (7)
[B]重合性不飽和化合物、
[C]感放射線性重合開始剤、及び
[D]有機溶媒
を含有し、
[A]共重合体が、
(A1)(メタ)アクリル酸及び不飽和カルボン酸無水物からなる群より選択される少なくとも1つの化合物に由来する構造単位、
(A2)(メタ)アクリル酸グリシジル、(メタ)アクリル酸3,4−エポキシシクロヘキシルメチル、4−ヒドロキシブチル(メタ)アクリレートグリシジルエーテル及び3−(メタ)アクリロイルオキシメチル−3−エチルオキセタンからなる群より選択される少なくとも1つの化合物に由来する構造単位、
(A3)スチレン、α―メチルスチレン、4―メチルスチレン及び4−ヒドロキシスチレンからなる群より選択される少なくとも1つの化合物に由来する構造単位、並びに
(A4)アクリル酸メチル、(メタ)アクリル酸エチル、(メタ)アクリル酸n−プロピル、(メタ)アクリル酸イソプロピル、(メタ)アクリル酸sec−ブチル、(メタ)アクリル酸イソブチル及び(メタ)アクリル酸tert−ブチルからなる群より選択される少なくとも1つの化合物に由来する構造単位
を含み、
[A]共重合体における
(A1)構造単位の含有割合が1モル%以上40モル%以下、
(A2)構造単位の含有割合が1モル%以上15モル%以下、
(A3)構造単位の含有割合が1モル%以上70モル%以下、及び
(A4)構造単位の含有割合が1モル%以上30モル%以下
である表示素子の層間絶縁膜形成用感放射線性樹脂組成物。 [A] copolymer,
[B] polymerizable unsaturated compound,
[C] a radiation sensitive polymerization initiator, and [D] an organic solvent,
[A] the copolymer is
(A1) a structural unit derived from at least one compound selected from the group consisting of (meth) acrylic acid and unsaturated carboxylic acid anhydride,
(A2) Group consisting of glycidyl (meth) acrylate, 3,4-epoxycyclohexylmethyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate glycidyl ether and 3- (meth) acryloyloxymethyl-3-ethyloxetane A structural unit derived from at least one compound selected from
(A3) Structural units derived from at least one compound selected from the group consisting of styrene, α-methylstyrene, 4-methylstyrene and 4-hydroxystyrene, and (A4) methyl acrylate, ethyl (meth) acrylate At least one selected from the group consisting of n-propyl (meth) acrylate, isopropyl ( meth) acrylate, sec-butyl (meth) acrylate, isobutyl (meth) acrylate and tert-butyl (meth) acrylate. Including structural units derived from one compound,
[A] The content ratio of the structural unit (A1) in the copolymer is 1 mol% or more and 40 mol% or less,
(A2) The content ratio of the structural unit is 1 mol% or more and 15 mol% or less,
(A3) Radiation-sensitive resin for forming an interlayer insulating film of a display element having a structural unit content of 1 mol% to 70 mol%, and (A4) a structural unit content of 1 mol% to 30 mol% Composition.
その(A5)構造単位の含有割合が1モル%以上40モル%以下含有である請求項1に記載の感放射線性樹脂組成物。 [A] the copolymer further comprises (A5) a structural unit derived from at least one compound selected from the group consisting of maleimide, N-phenylmaleimide and N-cyclohexylmaleimide;
The radiation sensitive resin composition according to claim 1, wherein the content ratio of the (A5) structural unit is 1 mol% or more and 40 mol% or less.
(2)上記塗膜の少なくとも一部に放射線を照射する工程、
(3)上記放射線が照射された塗膜を現像する工程、及び
(4)上記現像された塗膜を焼成する工程
を有する表示素子用層間絶縁膜の形成方法。 (1) The process of forming the coating film of the radiation sensitive resin composition of any one of Claims 1-4 on a board | substrate,
(2) A step of irradiating at least a part of the coating film with radiation,
(3) A step of developing the coating film irradiated with the radiation, and (4) A method for forming an interlayer insulating film for a display element, comprising a step of baking the developed coating film.
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JP3734436B2 (en) * | 2001-09-19 | 2006-01-11 | 奇美実業股▲分▼有限公司 | Photosensitive resin composition for liquid crystal display spacers |
JP4093457B2 (en) * | 2002-05-13 | 2008-06-04 | 東京応化工業株式会社 | Photosensitive resin composition and pattern forming method using the same |
TWI247195B (en) * | 2003-01-30 | 2006-01-11 | Chi Mei Corp | Photosensitive resin composition for spacer |
KR101221468B1 (en) * | 2005-01-27 | 2013-01-11 | 주식회사 동진쎄미켐 | Photosensitive resin composition |
KR101313538B1 (en) * | 2006-04-06 | 2013-10-01 | 주식회사 동진쎄미켐 | Negative photosensitive resin composition |
JP5293934B2 (en) * | 2007-06-13 | 2013-09-18 | Jsr株式会社 | Radiation-sensitive composition for forming colored layer, color filter, and color liquid crystal display element |
KR100911889B1 (en) * | 2007-07-16 | 2009-08-11 | 한국전기연구원 | Liquid crystal display device using organic-inorganic hybrid photosensitive resin composition and its cured product |
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