JP5632163B2 - Phosphorus-containing epoxy resin and phosphorus-containing epoxy resin composition, production method thereof, curable resin composition and cured product using the resin, and resin composition - Google Patents
Phosphorus-containing epoxy resin and phosphorus-containing epoxy resin composition, production method thereof, curable resin composition and cured product using the resin, and resin composition Download PDFInfo
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- JP5632163B2 JP5632163B2 JP2009540114A JP2009540114A JP5632163B2 JP 5632163 B2 JP5632163 B2 JP 5632163B2 JP 2009540114 A JP2009540114 A JP 2009540114A JP 2009540114 A JP2009540114 A JP 2009540114A JP 5632163 B2 JP5632163 B2 JP 5632163B2
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- epoxy resin
- phosphorus
- containing epoxy
- resin composition
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- 239000003822 epoxy resin Substances 0.000 title claims description 116
- 229920000647 polyepoxide Polymers 0.000 title claims description 116
- 229910052698 phosphorus Inorganic materials 0.000 title claims description 75
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims description 74
- 239000011574 phosphorus Substances 0.000 title claims description 74
- 239000000203 mixture Substances 0.000 title claims description 40
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 229920005989 resin Polymers 0.000 title description 54
- 239000011347 resin Substances 0.000 title description 54
- 239000011342 resin composition Substances 0.000 title description 8
- 150000001875 compounds Chemical class 0.000 claims description 80
- 239000000463 material Substances 0.000 claims description 39
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 24
- 239000003795 chemical substances by application Substances 0.000 claims description 18
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 claims description 10
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 claims description 8
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 claims description 8
- 238000005266 casting Methods 0.000 claims description 8
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 claims description 8
- 150000002430 hydrocarbons Chemical group 0.000 claims description 8
- YNPNZTXNASCQKK-UHFFFAOYSA-N phenanthrene Chemical compound C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 claims description 8
- 239000004215 Carbon black (E152) Substances 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 235000010290 biphenyl Nutrition 0.000 claims description 4
- 239000004305 biphenyl Substances 0.000 claims description 4
- 125000004122 cyclic group Chemical group 0.000 claims description 4
- 229930195733 hydrocarbon Natural products 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 239000003566 sealing material Substances 0.000 claims description 4
- 239000008393 encapsulating agent Substances 0.000 claims description 2
- 238000001723 curing Methods 0.000 description 37
- 239000010410 layer Substances 0.000 description 35
- 230000015572 biosynthetic process Effects 0.000 description 32
- 239000011888 foil Substances 0.000 description 25
- 229910052751 metal Inorganic materials 0.000 description 25
- 239000002184 metal Substances 0.000 description 25
- 238000003786 synthesis reaction Methods 0.000 description 25
- 238000006243 chemical reaction Methods 0.000 description 19
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 18
- 238000000034 method Methods 0.000 description 18
- 239000004593 Epoxy Substances 0.000 description 16
- -1 2,5-dihydroxyphenyl Chemical group 0.000 description 12
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 11
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 9
- 229920003986 novolac Polymers 0.000 description 9
- 230000009257 reactivity Effects 0.000 description 9
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 8
- 239000003054 catalyst Substances 0.000 description 8
- 239000003063 flame retardant Substances 0.000 description 8
- AZQWKYJCGOJGHM-UHFFFAOYSA-N para-benzoquinone Natural products O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 8
- 150000002989 phenols Chemical class 0.000 description 8
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 230000003111 delayed effect Effects 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 239000005011 phenolic resin Substances 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- BSYJHYLAMMJNRC-UHFFFAOYSA-N 2,4,4-trimethylpentan-2-ol Chemical compound CC(C)(C)CC(C)(C)O BSYJHYLAMMJNRC-UHFFFAOYSA-N 0.000 description 4
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 description 4
- 150000004820 halides Chemical class 0.000 description 4
- 150000002903 organophosphorus compounds Chemical class 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- 238000010992 reflux Methods 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- 229930185605 Bisphenol Natural products 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000004132 cross linking Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 125000003700 epoxy group Chemical group 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000004128 high performance liquid chromatography Methods 0.000 description 3
- 229960004337 hydroquinone Drugs 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 230000014759 maintenance of location Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000005012 migration Effects 0.000 description 3
- 238000013508 migration Methods 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 238000000425 proton nuclear magnetic resonance spectrum Methods 0.000 description 3
- 230000008961 swelling Effects 0.000 description 3
- 239000002966 varnish Substances 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- FRASJONUBLZVQX-UHFFFAOYSA-N 1,4-naphthoquinone Chemical compound C1=CC=C2C(=O)C=CC(=O)C2=C1 FRASJONUBLZVQX-UHFFFAOYSA-N 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
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- KJCVRFUGPWSIIH-UHFFFAOYSA-N alpha-naphthol Natural products C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 2
- 239000010951 brass Substances 0.000 description 2
- 239000007810 chemical reaction solvent Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 229930003836 cresol Natural products 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 description 2
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 2
- ZZTCPWRAHWXWCH-UHFFFAOYSA-N diphenylmethanediamine Chemical compound C=1C=CC=CC=1C(N)(N)C1=CC=CC=C1 ZZTCPWRAHWXWCH-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
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- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- LEQAOMBKQFMDFZ-UHFFFAOYSA-N glyoxal Chemical compound O=CC=O LEQAOMBKQFMDFZ-UHFFFAOYSA-N 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 150000002460 imidazoles Chemical class 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
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- 229910003475 inorganic filler Inorganic materials 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 2
- 239000000347 magnesium hydroxide Substances 0.000 description 2
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 2
- 239000003607 modifier Substances 0.000 description 2
- NXPPAOGUKPJVDI-UHFFFAOYSA-N naphthalene-1,2-diol Chemical compound C1=CC=CC2=C(O)C(O)=CC=C21 NXPPAOGUKPJVDI-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 150000003003 phosphines Chemical class 0.000 description 2
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- 150000003512 tertiary amines Chemical class 0.000 description 2
- CNHDIAIOKMXOLK-UHFFFAOYSA-N toluquinol Chemical compound CC1=CC(O)=CC=C1O CNHDIAIOKMXOLK-UHFFFAOYSA-N 0.000 description 2
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- UHCXRMWHYLSPDJ-UHFFFAOYSA-N (2-aminophenyl) benzenesulfonate Chemical compound NC1=CC=CC=C1OS(=O)(=O)C1=CC=CC=C1 UHCXRMWHYLSPDJ-UHFFFAOYSA-N 0.000 description 1
- BOJZPUPAXYETRK-UHFFFAOYSA-N 1,1-diphenylethane-1,2-diamine Chemical compound C=1C=CC=CC=1C(N)(CN)C1=CC=CC=C1 BOJZPUPAXYETRK-UHFFFAOYSA-N 0.000 description 1
- IEVIXDLZSRLUHW-UHFFFAOYSA-N 1,2-diphenylethene-1,2-diol Chemical compound C=1C=CC=CC=1C(O)=C(O)C1=CC=CC=C1 IEVIXDLZSRLUHW-UHFFFAOYSA-N 0.000 description 1
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- RBAHPVZZUNVLLE-UHFFFAOYSA-N 1-phenoxy-1-phenylpropan-1-amine Chemical compound C=1C=CC=CC=1C(N)(CC)OC1=CC=CC=C1 RBAHPVZZUNVLLE-UHFFFAOYSA-N 0.000 description 1
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 1
- NKNIZOPLGAJLRV-UHFFFAOYSA-N 2,2-diphenylpropane-1,1-diamine Chemical compound C=1C=CC=CC=1C(C(N)N)(C)C1=CC=CC=C1 NKNIZOPLGAJLRV-UHFFFAOYSA-N 0.000 description 1
- LLNSYBHDHRWWME-UHFFFAOYSA-N 2,3,5,6-tetrabutyl-4-[2-(2,3,5,6-tetrabutyl-4-hydroxyphenyl)propan-2-yl]phenol Chemical compound CCCCc1c(O)c(CCCC)c(CCCC)c(c1CCCC)C(C)(C)c1c(CCCC)c(CCCC)c(O)c(CCCC)c1CCCC LLNSYBHDHRWWME-UHFFFAOYSA-N 0.000 description 1
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- ZUZAETTVAMCNTO-UHFFFAOYSA-N 2,3-dibutylbenzene-1,4-diol Chemical compound CCCCC1=C(O)C=CC(O)=C1CCCC ZUZAETTVAMCNTO-UHFFFAOYSA-N 0.000 description 1
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- 239000004642 Polyimide Substances 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- 235000012211 aluminium silicate Nutrition 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 125000003710 aryl alkyl group Chemical group 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical group C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 1
- VBQRUYIOTHNGOP-UHFFFAOYSA-N benzo[c][2,1]benzoxaphosphinine 6-oxide Chemical compound C1=CC=C2P(=O)OC3=CC=CC=C3C2=C1 VBQRUYIOTHNGOP-UHFFFAOYSA-N 0.000 description 1
- JWAZRIHNYRIHIV-UHFFFAOYSA-N beta-hydroxynaphthyl Natural products C1=CC=CC2=CC(O)=CC=C21 JWAZRIHNYRIHIV-UHFFFAOYSA-N 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- XCEUHXVTRJQJSR-UHFFFAOYSA-N bromo(phenyl)phosphane Chemical compound BrPC1=CC=CC=C1 XCEUHXVTRJQJSR-UHFFFAOYSA-N 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- MLUCVPSAIODCQM-NSCUHMNNSA-N crotonaldehyde Chemical compound C\C=C\C=O MLUCVPSAIODCQM-NSCUHMNNSA-N 0.000 description 1
- MLUCVPSAIODCQM-UHFFFAOYSA-N crotonaldehyde Natural products CC=CC=O MLUCVPSAIODCQM-UHFFFAOYSA-N 0.000 description 1
- 229910002026 crystalline silica Inorganic materials 0.000 description 1
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical group C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 1
- BXJGUBZTZWCMEX-UHFFFAOYSA-N dimethylhydroquinone Natural products CC1=C(C)C(O)=CC=C1O BXJGUBZTZWCMEX-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000003480 eluent Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000012765 fibrous filler Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000000295 fuel oil Substances 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 229940015043 glyoxal Drugs 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 229940042795 hydrazides for tuberculosis treatment Drugs 0.000 description 1
- NWVVVBRKAWDGAB-UHFFFAOYSA-N hydroquinone methyl ether Natural products COC1=CC=C(O)C=C1 NWVVVBRKAWDGAB-UHFFFAOYSA-N 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012784 inorganic fiber Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 1
- 239000004761 kevlar Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910000000 metal hydroxide Inorganic materials 0.000 description 1
- 150000004692 metal hydroxides Chemical class 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- NTNWKDHZTDQSST-UHFFFAOYSA-N naphthalene-1,2-diamine Chemical compound C1=CC=CC2=C(N)C(N)=CC=C21 NTNWKDHZTDQSST-UHFFFAOYSA-N 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 239000012766 organic filler Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 150000004714 phosphonium salts Chemical class 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 150000003018 phosphorus compounds Chemical class 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000011403 purification operation Methods 0.000 description 1
- 239000007870 radical polymerization initiator Substances 0.000 description 1
- 238000010526 radical polymerization reaction Methods 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000012209 synthetic fiber Substances 0.000 description 1
- 229920002994 synthetic fiber Polymers 0.000 description 1
- 150000003505 terpenes Chemical class 0.000 description 1
- 235000007586 terpenes Nutrition 0.000 description 1
- 229920002725 thermoplastic elastomer Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 150000004992 toluidines Chemical class 0.000 description 1
- CMLWFCUAXGSMBB-UHFFFAOYSA-N tris(2,6-dimethoxyphenyl)phosphane Chemical compound COC1=CC=CC(OC)=C1P(C=1C(=CC=CC=1OC)OC)C1=C(OC)C=CC=C1OC CMLWFCUAXGSMBB-UHFFFAOYSA-N 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
- 239000002759 woven fabric Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F299/00—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F299/00—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers
- C08F299/02—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/14—Polycondensates modified by chemical after-treatment
- C08G59/1433—Polycondensates modified by chemical after-treatment with organic low-molecular-weight compounds
- C08G59/1488—Polycondensates modified by chemical after-treatment with organic low-molecular-weight compounds containing phosphorus
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
- C08G59/22—Di-epoxy compounds
- C08G59/30—Di-epoxy compounds containing atoms other than carbon, hydrogen, oxygen and nitrogen
- C08G59/304—Di-epoxy compounds containing atoms other than carbon, hydrogen, oxygen and nitrogen containing phosphorus
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
- C08G59/32—Epoxy compounds containing three or more epoxy groups
- C08G59/3254—Epoxy compounds containing three or more epoxy groups containing atoms other than carbon, hydrogen, oxygen or nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/49—Phosphorus-containing compounds
- C08K5/51—Phosphorus bound to oxygen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/145—Organic substrates, e.g. plastic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/032—Organic insulating material consisting of one material
- H05K1/0326—Organic insulating material consisting of one material containing O
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- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Epoxy Resins (AREA)
- Macromonomer-Based Addition Polymer (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Description
【技術分野】
【0001】
本発明は電子回路基板に用いられる銅張積層板、フィルム材、樹脂付き銅箔などを製造するエポキシ樹脂組成物や電子部品に用いられる封止材、成形材、注型材、接着剤、電気絶縁塗装材料などとして有用なリン含有エポキシ樹脂及びリン含有エポキシ樹脂組成物、その製造方法と該樹脂を用いた硬化性樹脂組成物及び硬化物に関する。
【背景技術】
【0002】
エポキシ樹脂は接着性、耐熱性、成形性に優れていることから電子部品、電気機器、自動車部品、FRP、スポーツ用品などに広範囲に使用されている。なかでも電子部品、電気機器に使用される銅張積層板や封止材には火災の防止、遅延などといった安全性が強く要求されていることから、これまでこれらの特性を有する臭素化エポキシ樹脂などが使用されている。比重が大きいという問題を有しているものの、エポキシ樹脂にハロゲン、特に臭素を導入ことにより難燃性が付与されること、エポキシ基は高反応性を有し優れた硬化性が得られることから、臭素化エポキシ樹脂類は有用な電子、電気材料として位置づけられている。
しかし、最近の電気機器を見るといわゆる軽薄短小を最重要視する傾向が次第に強くなってきている。このような社会的要求下において、比重の大きいハロゲン化物は最近の軽量化傾向の観点からは好ましくない材料であり、また、高温で長期にわたって使用した場合、ハロゲン化物の解離が起こり、これによって配線腐食の発生のおそれがある。さらに使用済みの電子部品、電気機器の燃焼の際にハロゲン化物などの有害物質を発生し、環境安全性の視点からもハロゲンの利用が問題視されるようになり、これに代わる材料が研究されるようになった。
【0003】
特許請求の範囲に記載の一般式(2)で示される化合物に関する公知文献として、特許文献1には、HCA−HQ(三光株式会社製 10−(2,5−ジヒドロキシフェニル)−10−ジヒドロ−9−オキサ−10−ホスファフェナントレン−10−オキシド))と、エポキシ樹脂類とを所定のモル比で反応させて得られる熱硬化性難燃性樹脂が開示されている。特許文献2には少なくとも2個以上のエポキシ基を有するエポキシ化合物と、ジフェニルホスフィニルハイドロキノンとを反応させてなるリン含有エポキシ樹脂が開示されている。特許文献3には、エポキシ樹脂、リン原子上に芳香族基を有するホスフィン化合物及びキノン化合物を有機溶媒存在下に反応させることを特徴とする難燃性エポキシ樹脂の製造方法が開示されている。特許文献4には一般式(2)で表されるリン含有多価フェノール化合物とエポキシ樹脂を反応させて得られるリン含有エポキシ樹脂、リン含有難燃性エポキシ樹脂組成物が開示されている。特許文献5には、9,10−ジヒドロ−9−オキサ−10−ホスファフェナントレン−10−オキシドと、1,4−ベンゾキノン及び/又は1,4−ナフトキノンを、反応系内の総水分量が、反応に用いる9,10−ジヒドロ−9−オキサ−10−ホスファフェナントレン−10−オキシド全量に対して0.3質量%以下になるように制御して反応させて反応組成物を得る工程1と、工程1で得られた反応組成物を精製することなく、ビスフェノールA型エポキシ樹脂及び/又はビスフェノールF型エポキシ樹脂と反応させる工程2を行ってリン含有難燃性ビスフェノール型エポキシ樹脂を製造する方法が開示されている。
【先行技術文献】
【特許文献】
【0004】
【特許文献1】特開平04−11662号公報
【特許文献2】特開平05−214070公報
【特許文献3】特開2000−309624公報
【特許文献4】特開2002−265562公報
【特許文献5】特開2006−342217公報
しかし、いずれの特許文献でも硬化剤との硬化性に関しては記載がない。
特許文献6には、一般式(1)で示される化合物である構造式4を含む一官能性の有機リン化合物類の記載があり、「エポキシ基と反応して、樹脂中に、いわゆるペンダントを形成するためにエポキシ樹脂の架橋密度が減少して硬化速度の遅延、耐熱性の低下または機械的強度の低下などの弊害が大きく、難燃性を充分に発現する程度の量を使用する事は困難である。」と記載されており、反応型の有機リン化合物として、一官能性の有機リン化合物類を充分に難燃性を発揮する程度の量(一般的には十数%〜数十%)を使用すると架橋密度が減少し硬化速度の遅延等の問題があることが記載されている。
【特許文献6】特開2000−154234公報
【0005】
【非特許文献1】I.G.M.Campbell and I.D.R.Stevens, Chemical Communications,第505-506頁(1966)
【非特許文献2】(Zh.Obshch.Khim.),42(11),第2415-2418 頁(1972)
【特許文献7】特開昭60−126293号公報
【特許文献8】特開昭61−236787号公報
【特許文献9】特開平5−331179号公報
【特許文献10】特開平05−39345号公報
【発明の概要】
【発明が解決しようとする課題】
【0006】
本発明者は、各種のリン含有エポキシ樹脂の硬化剤との反応性につき検討した結果、得られたリン含有エポキシ樹脂により著しい反応性の差があることを見いだした。エポキシ樹脂の反応性の指標であるゲルタイムが長い場合は、例えば積層圧着時の硬化の際には樹脂が流れすぎてしまい、得られる積層板は樹脂分が不足することにより接着力低下、マイグレーションの発生、ハンダ浸漬時のふくれなどの不具合が生じてしまう。また、ゲルタイムを硬化触媒の配合量を増やすことにより調整した場合においては、プリプレグの貯蔵安定性が悪くなり、長期保存が出来ない等の問題がある。
【課題を解決するための手段】
【0007】
本発明者は前記の課題を解決するため鋭意研究を重ねた結果、一官能性の有機リン化合物類のなかでも、一般式(1)で示される化合物が2.5重量%を超える含有量である一般式(2)で示される化合物を使用する場合、得られるリン含有エポキシ樹脂の硬化反応性が著しく損なわれる事を見出し、本願発明のリン含有エポキシ樹脂を完成したものであり、前記課題を解決するための手段はその特許請求の範囲に記載した下記のようなものである。
(1)一般式(1)で示される化合物の含有量が0.01〜2.5重量%である一般式(2)で示される化合物と、エポキシ樹脂とを反応して得られるリン含有エポキシ樹脂。
【0008】
【化1】
【0009】
【化2】
【0010】
n:0又は1
R1,R2は水素又は炭化水素基を示し、各々は異なっていても同一でも良く、直鎖状、分岐鎖状、環状であっても良い。また、R1とR2が結合し、環状構造となっていても良い。
Bはベンゼン、ビフェニル、ナフタレン、アントラセン、フェナントレン及びこれらの炭化水素置換体のいずれかを示す。
【0011】
(2)前記一般式(1)で示される化合物の含有率が2.5重量%以下である前記一般式(2)で示される化合物とエポキシ樹脂類とを反応することを特徴とする請求項1記載のリン含有エポキシ樹脂の製造方法。
(3)前記(1)〜(2)のいずれかに記載のリン含有エポキシ樹脂を用いることを特徴とするリン含有ビニルエステル樹脂。
(4)前記(1)〜(2)のいずれかに記載のリン含有エポキシ樹脂を必須成分とし、硬化剤を配合してなるリン含有エポキシ樹脂組成物。
(5)前記(3)のリン含有ビニルエステル樹脂を必須成分とし、ラジカル重合開始剤および/または硬化剤を配合してなるラジカル重合性樹脂組成物。
(6)前記(4)のリン含有エポキシ樹脂組成物を用いて得られる電子回路基板用材料。
(7)前記(4)のリン含有エポキシ樹脂組成物を用いて得られる封止材。
(8)前記(4)のリン含有エポキシ樹脂組成物を用いて得られる注型材。
(9)前記(4)〜(8)のいずれかに記載のリン含有エポキシ樹脂組成物、ラジカル重合性樹脂組成物、電子回路基板用材料、封止材、注型材を硬化してなる硬化物。
【0012】
【発明の効果】
【0013】
【発明を実施するための形態】
本発明のリン含有エポキシ樹脂は、エポキシ樹脂類と一般式(2)で示される化合物を反応して得られるが、一般式(2)で示される化合物中に存在する一般式(1)で示される化合物が0.01〜2.5重量%である。
本発明で用いる一般式(2)で示される化合物は、例えば、非特許文献1やロシアの一般的な雑誌である非特許文献2や特許文献7、特許文献8、特許文献9、特許文献10で示される方法により得られる。特許文献7、特許文献8、特許文献9ではキノン化合物に対してHCA(9,10−ジヒドロ−9−オキサ−10−ホスファフェナントレン−10−オキシド)を常に当量以上存在する状態で反応することが記載されており、反応後は洗浄溶媒として反応溶媒を用いることが記載されている。これは過剰に用いたリン化合物を除去する目的である。
【0014】
また、一般式(2)で示される化合物は、非特許文献1〜2、特許文献7〜10で開示されている方法によって製造され、洗浄、再結晶等の精製手段によって製造コストを上昇させ純度99%以上としたものが知られている。その際に一般式(1)で示される化合物が他の不純物と共に副生される。その反応式を式1に示す。反応式1は、一般式(2)で示される化合物と一般式(1)で示される化合物の生成を例示するが、反応式1中で示される一般式(3)の化合物が残存する例である。
【0015】
【化3】
n:0又は1
【0016】
R1,R2は水素又は炭化水素基を示し、各々は異なっていても同一でも良く、直鎖状、分岐鎖状、環状であっても良い。また、R1とR2が結合し、環状構造となっていても良い。
Bはベンゼン、ビフェニル、ナフタレン、アントラセン、フェナントレン及びこれらの炭化水素置換体のいずれかを示す。
本発明者は、一般式(1)で示される化合物を不純物成分として含有する一般式(2)で示される化合物を使用して得られたエポキシ樹脂は、架橋密度が減少するほどの量では無い僅かな量の一般式(1)で示される化合物の含有率であっても、反応速度が著しく遅延することを見いだし、本発明に至ったものであり、従来の単官能フェノールでは考えられないほど、エポキシ樹脂の反応速度の遅延効果の影響が特異的に大きいことが分かった。従って、一般式(2)で示される化合物を必要以上の製造コストかけて精製して高純度とする以外に、この一般式(1)で示される化合物の成分の管理が電子回路基板、封止材、注型材などに使用された場合の不具合を解決出来るのである。
一般式(1)で示される化合物の含有率が2.5重量%以下である一般式(2)で示される化合物を用いた場合は、エポキシ樹脂と硬化剤との反応性に与える影響が少ない。即ち、一般式(1)で示される化合物の含有率が、2.5重量%以下、好ましくは2.0重量%以下である一般式(2)で示される化合物を使用する。一般式(2)で示される化合物に含有される一般式(1)で示される化合物の好ましい含有率は2重量%以下である。より好ましい含有率は1重量%以下であり、望ましくは0.5%以下である。一般式(1)で示される化合物が2.5重量%を超えて含有する一般式(2)で示される化合物とエポキシ樹脂類とを反応して得られるリン含有エポキシ樹脂の場合は、硬化剤との反応性が著しく遅延することから実用性に劣るものとなる。
【0017】
本発明で用いられる一般式(2)で示される化合物は、非特許文献1〜2、特許文献7〜10で開示されている方法により製造することができ、製造後の抽出、洗浄、再結晶、蒸留などの精製操作などにより一般式(1)で示される化合物が2.5重量%以下とすることができる。また、これらの方法によらず一般式(2)で示される化合物の反応条件により一般式(1)で示される化合物を2.5重量%以下としても良い。
一般式(2)で示される化合物の具体例としては、構造式1で表されるHCA−HQ(三光株式会社製 10−(2,5−ジヒドロキシフェニル)−10−ジヒドロ−9−オキサ−10−ホスファフェナントレン−10−オキシド)、構造式2で表されるHCA−NQ(10−(2,7−ジヒドロキシナフチル)−10H−ジヒドロ−9−オキサ−10−ホスファフェナントレン−10−オキシド)、PPQ(北興化学工業株式会社 ジフェニルホスフィニルヒドロキノン)、ジフェニルホスフィニルナフトキノン、CPHO−HQ(日本化学工業株式会社製 シクロオクチレンホスフィニル−1,4−ベンゼンジオール)、シクロオクチレンホスフィニル−1,4−ナフタレンジオール、特開2002−265562で開示されているリン含有フェノール化合物等が挙げられるが2種類以上併用しても良い。しかし、一般式(1)で示される化合物の含有量が0.01〜2.5重量%であることが必要である。
構造式1
【0018】
【化4】
構造式2
【0019】
【化5】
【0020】
一般式(1)で示される化合物の含有量が0.01〜2.5重量%である一般式(2)で示される化合物と反応を行うエポキシ樹脂類はグリシジルエーテル基を有することが望ましい。具体的にはエポトート YDC−1312、ZX−1027(東都化成株式会社製 ハイドロキノン型エポキシ樹脂)、ZX−1251(東都化成株式会社製 ビフェノール型エポキシ樹脂)、エポトート YD−127、エポトート YD−128、エポトート YD−8125、エポトート YD−825GS、エポトート YD−011、エポトート YD−900、エポトート YD−901(東都化成株式会社製 BPA型エポキシ樹脂)、エポトート YDF−170、エポトート YDF−8170、エポトート YDF−870GS、エポトート YDF−2001(東都化成株式会社製 BPF型エポキシ樹脂)、エポトート YDPN−638(東都化成株式会社製 フェノールノボラック型エポキシ樹脂)、エポトート YDCN−701(東都化成株式会社製 クレゾールノボラック型エポキシ樹脂)、ZX−1201(東都化成株式会社製 ビスフェノールフルオレン型エポキシ樹脂)、NC−3000(日本化薬株式会社製 ビフェニルアラルキルフェノール型エポキシ樹脂)、EPPN−501H、EPPN−502H(日本化薬株式会社製 多官能エポキシ樹脂)ZX−1355(東都化成株式会社製 ナフタレンジオール型エポキシ樹脂)、ESN−155、ESN−185V、ESN−175(東都化成株式会社製 βナフトールアラルキル型エポキシ樹脂)、ESN−355、ESN−375(東都化成株式会社製 ジナフトールアラルキル型エポキシ樹脂)、ESN−475V、ESN−485(東都化成株式会社製 αナフトールアラルキル型エポキシ樹脂)等の多価フェノール樹脂等のフェノール化合物と、エピハロヒドリンとから製造されるエポキシ樹脂、エポトート YH−434、エポトート YH−434GS(東都化成株式会社製 ジアミノジフェニルメタンテトラグリシジルエーテル)等のアミン化合物と、エピハロヒドリンとから製造されるエポキシ樹脂、YD−171(東都化成株式会社製 ダイマー酸型エポキシ樹脂)等のカルボン酸類と、エピハロヒドリンとから製造されるエポキシ樹脂などが挙げられるがこれらに限定されるものではなく2種類以上併用しても良い。
【0021】
本発明のリン含有エポキシ樹脂の製造方法は、通常の多官能フェノール類とエポキシ樹脂類の反応と同様に、一般式(1)で示される化合物の含有量が0.01〜2.5重量%である一般式(2)で示される化合物とエポキシ樹脂類を仕込み、加熱溶融して反応を行う。反応温度として100℃〜200℃より好ましくは120℃〜180℃で攪拌下、反応を行う。この反応は必要に応じて触媒を使用して生産性の改善を計ることができる。具体的な触媒としてはベンジルジメチルアミン等の第3級アミン類、テトラメチルアンモニウムクロライド等の第4級アンモニウム塩類、トリフェニルホスフィン、トリス(2,6−ジメトキシフェニル)ホスフィン等のホスフィン類、エチルトリフェニルホスホニウムブロマイド等のホスホニウム塩類、2メチルイミダゾール、2エチル4メチルイミダゾール等のイミダゾール類等各種触媒が使用可能である。また、反応時の粘度によっては反応溶媒を使用しても良い。具体的にはベンゼン、トルエン、キシレン、シクロペンタノン、シクロヘキサノンなどが挙げられるがこれらに限定されるものではなく、2種類以上使用しても良い。
【0022】
また、必要に応じて各種エポキシ樹脂変性剤を併用しても良い。変性剤としてはビスフェノールA、ビスフェノールF、ビスフェノールAD、テトラブチルビスフェノールA、ハイドロキノン、メチルハイドロキノン、ジメチルハイドロキノン、ジブチルハイドロキノン、レゾルシン、メチルレゾルシン、ビフェノール、テトラメチルビフェノール、ジヒドロキシナフタレン、ジヒドロキシジフェニルエーテル、ジヒドロキシスチルベン類、フェノールノボラック樹脂、クレゾールノボラック樹脂、ビスフェノールAノボラック樹脂、ジシクロペンタジエンフェノール樹脂、フェノールアラルキル樹脂、ナフトールノボラック樹脂、テルペンフェノール樹脂、重質油変性フェノール樹脂、臭素化フェノールノボラック樹脂などの種々のフェノール類や、種々のフェノール類と、ヒドロキシベンズアルデヒド、クロトンアルデヒド、グリオキザールなどの種々のアルデヒド類との縮合反応で得られる多価フェノール樹脂や、アニリン、フェニレンジアミン、トルイジン、キシリジン、ジエチルトルエンジアミン、ジアミノジフェニルメタン、ジアミノジフェニルエタン、ジアミノジフェニルプロパン、ジアミノジフェニルケトン、ジアミノジフェニルスルフィド、ジアミノジフェニルスルホン、ビス(アミノフェニル)フルオレン、ジアミノジエチルジメチルジフェニルメタン、ジアミノジフェニルエーテル、ジアミノベンズアニリド、ジアミノビフェニル、ジメチルジアミノビフェニル、ビフェニルテトラアミン、ビスアミノフェニルアントラセン、ビスアミノフェノキシベンゼン、ビスアミノフェノキシフェニルエーテル、ビスアミノフェノキシビフェニル、ビスアミノフェノキシフェニルスルホン、ビスアミノフェノキシフェニルプロパン、ジアミノナフタレン等のアミン化合物が挙げられる。
【0023】
本発明のリン含有エポキシ樹脂のリン含有量は好ましくは0.3〜5重量%、より好ましくは0.5〜3.6重量%、更に好ましくは1.0〜3.1重量%であり、リン含有エポキシ樹脂を含んでなるリン含有エポキシ樹脂組成物中の有機成分中のリンの含有量は好ましくは0.2〜4重量%、より好ましくは0.4〜3.5重量%、更に好ましくは0.6〜3重量%である。リン含有エポキシ樹脂組成物中の有機成分中のリンの含有量が0.2重量%以下になると難燃性の確保が難しくなり、5重量%を超えると耐熱性に悪影響を与える場合があり、0.2重量%から5重量%に調整することが望ましい。
また、本発明で用いるリン含有エポキシ樹脂のエポキシ当量は好ましくは200〜1500g/eq、より好ましくは250〜1000g/eq、更に好ましくは300〜800g/eqである。エポキシ当量が200g/eq未満の場合は接着性に劣り、1500g/eqを越えると耐熱性に悪影響を与えるために200〜1500g/eqに調整することが望ましい。
本発明のリン含有エポキシ樹脂組成物の硬化剤としては、各種フェノール樹脂類や酸無水物類、アミン類、ヒドラジッド類、酸性ポリエステル類等の通常使用されるエポキシ樹脂用硬化剤を使用することができ、これらの硬化剤は1種類だけ使用しても2種類以上使用しても良い。
【0024】
本発明のリン含有エポキシ樹脂組成物には必要に応じて第3級アミン、第4級アンモニウム塩、ホスフィン類、イミダゾール類等の硬化促進剤を配合することができる。
本発明のリン含有エポキシ樹脂組成物には、粘度調整用として有機溶剤も用いることができる。用いることが出来る有機溶剤としては、N,N−ジメチルホルムアミド等のアミド類、エチレングリコールモノメチルエーテル等のエーテル類、アセトン、メチルエチルケトン等のケトン類、メタノール、エタノール等のアルコール類、ベンゼン、トルエン等の芳香族炭化水素類等が挙げられるが、これらに限定させるものでは無く、これらの溶剤のうちの1種類だけ使用しても2種類以上使用しても良く、エポキシ樹脂濃度として30〜80重量%の範囲で配合することができる。
【0025】
また、本発明のリン含有エポキシ樹脂組成物で用いることのできるフィラーとしては、水酸化アルミニウム、水酸化マグネシウム、タルク、焼成タルク、クレー、カオリン、酸化チタン、ガラス粉末、微粉末シリカ、溶融シリカ、結晶シリカ、シリカバルーン等の無機フィラーが挙げられるが、顔料等を配合しても良い。一般的無機充填材を用いる理由として、耐衝撃性の向上が挙げられる。また、水酸化アルミ、水酸化マグネシウムなどの金属水酸化物を用いた場合、難燃助剤として作用し、リン含有量が少なくても難燃性を確保することが出来る。特に配合量が10%以上でないと、耐衝撃性の効果は少ない。しかしながら、配合量が150%を越えると積層板用途として必要な項目である接着性が低下する。また、シリカ、ガラス繊維、パルプ繊維、合成繊維、セラミック繊維等の繊維質充填材や微粒子ゴム、熱可塑性エラストマーなどの有機充填材を上記樹脂組成物に含有することもできる。
上記のリン含有エポキシ樹脂組成物により得られる電子回路基板用材料としては、樹脂シート、樹脂付き金属箔、プリプレグ、積層板が挙げられる。樹脂シートを製造する方法としては、特に限定するものではないが、例えばポリエステルフィルム、ポリイミドフィルムなどのエポキシ樹脂組成物に溶解しないキャリアフィルムに、上記のようなリン含有エポキシ樹脂組成物を好ましくは5〜100μmの厚みに塗布した後、100〜200℃で1〜40分加熱乾燥してシート状に成型することができる。一般にキャスティング法と呼ばれる方法で樹脂シートが形成されるものである。このときリン含有エポキシ樹脂組成物を塗布するシートにはあらかじめ離型剤にて表面処理を施しておくと、成型された樹脂シートを容易に剥離することが出来る。ここで樹脂シートの厚みは5〜80μmに形成することが望ましい。
【0026】
次に、上記のリン含有エポキシ樹脂組成物により得られる樹脂付き金属箔について説明する。金属箔としては、銅、アルミニウム、真鍮、ニッケル等の単独、合金、複合の金属箔を用いることができる。厚みとして9〜70μmの金属箔を用いることが好ましい。リン含有エポキシ樹脂を含んでなる難燃性樹脂組成物及び金属箔から樹脂付き金属箔を製造する方法としては、特に限定するものではなく、例えば上記金属箔の一面に、上記リン含有エポキシ樹脂組成物を溶剤で粘度調整した樹脂ワニスを、ロールコーター等を用いて塗布した後、加熱乾燥して樹脂成分を半硬化(Bステージ化)して樹脂層を形成することにより得ることができる。樹脂成分を半硬化するにあたっては、例えば100〜200℃で1〜40分間加熱乾燥することができる。ここで、樹脂付き金属箔の樹脂部分の厚みは5〜110μmに形成することが望ましい。
次に、上記のリン含有エポキシ樹脂組成物を用いて得られるプリプレグについて説明する。シート状基材としては、ガラス等の無機繊維や、ポリエステル等、ポリアミン、ポリアクリル、ポリイミド、ケブラー等の有機質繊維の織布又は不織布を用いることができるがこれに限定されるものではない。リン含有エポキシ樹脂組成物及び基材からプリプレグを製造する方法としては、特に限定するものではなく、例えば上記基材を、上記エポキシ樹脂組成物を溶剤で粘度調整した樹脂ワニスに浸漬して含浸した後、加熱乾燥して樹脂成分を半硬化(Bステージ化)して得られるものであり、例えば100〜200℃で1〜40分間加熱乾燥することができる。ここで、プリプレグ中の樹脂量は、樹脂分30〜80重量%とすることが好ましい。
【0027】
次に、上記のような樹脂シート、樹脂付き金属箔、プリプレグ等を用いて積層板を製造する方法を説明する。プリプレグを用いて積層板を形成する場合は、プリプレグを一又は複数枚積層し、片側又は両側に金属箔を配置して積層物を構成し、この積層物を加熱・加圧して積層一体化する。ここで金属箔としては、銅、アルミニウム、真鍮、ニッケル等の単独、合金、複合の金属箔を用いることができる。積層物を加熱加圧する条件としては、エポキシ樹脂組成物が硬化する条件で適宜調整して加熱加圧すればよいが、加圧の圧力があまり低いと、得られる積層板の内部に気泡が残留し、電気的特性が低下する場合があるため、成形性を満足する条件で加圧することが好ましい。例えば温度を160〜220℃、圧力を49.0〜490.3N/cm2(5〜50kgf/cm2)、加熱加圧時間を40〜240分間にそれぞれ設定することができる。更にこのようにして得られた単層の積層板を内層材として、多層板を作製することができる。この場合、まず積層板にアディティブ法やサブトラクティブ法等にて回路形成を施し、形成された回路表面を酸溶液で処理して黒化処理を施して、内層材を得る。この内層材の、片側又は両側の回路形成面に、樹脂シート、樹脂付き金属箔、又はプリプレグにて絶縁層を形成すると共に、絶縁層の表面に導体層を形成して、多層板を形成するものである。樹脂シートにて絶縁層を形成する場合は、複数枚の内層材の回路形成面に樹脂着シートを配置して積層物を形成する。あるいは内層材の回路形成面と金属箔の間に樹脂シートを配置して積層物を形成する。そしてこの積層物を加熱加圧して一体成形することにより、樹脂シートの硬化物を絶縁層として形成すると共に、内層材の多層化を形成する。あるいは内層材と導体層である金属箔を樹脂シートの硬化物を絶縁層として形成するものである。ここで、金属箔としては、内層材として用いられる積層板に用いたものと同様のものを用いることもできる。また加熱加圧成形は、内層材の形成と同様の条件にて行うことができる。積層板に樹脂を塗布して絶縁層を形成する場合は、内層材の最外層の回路形成面樹脂をリン含有エポキシ樹脂組成物またはリン含有エポキシ樹脂を含んでなる難燃性エポキシ樹脂組成物を好ましくは5〜100μmの厚みに塗布した後、100〜200℃で1〜90分加熱乾燥してシート状に成形する。一般にキャスティング法と呼ばれる方法で形成されるものである。乾燥後の厚みは5〜80μmに形成することが望ましい。このようにして形成された多層積層板の表面に、更にアディティブ法やサブトラクティブ法にてバイアホール形成や回路形成をほどこして、プリント配線板を形成することができる。また更にこのプリント配線板を内層材として上記の工法を繰り返すことにより、更に多層の多層板を形成することができるものである。また樹脂付き金属箔にて絶縁層を形成する場合は、内層材の回路形成面に、樹脂付き金属箔を、樹脂付き金属箔の樹脂層が内層材の回路形成面と対向するように重ねて配置して、積層物を形成する。そしてこの積層物を加熱加圧して一体成形することにより、樹脂付き金属箔の樹脂層の硬化物を絶縁層として形成すると共に、その外側の金属箔を導体層として形成するものである。ここで加熱加圧成形は、内層材の形成と同様の条件にて行うことができる。またプリプレグにて絶縁層を形成する場合は、内層材の回路形成面に、プリプレグを一枚又は複数枚を積層したものを配置し、更にその外側に金属箔を配置して積層物を形成する。そしてこの積層物を加熱加圧して一体成形することにより、プリプレグの硬化物を絶縁層として形成すると共に、その外側の金属箔を導体層として形成するものである。ここで、金属箔としては、内層板として用いられる積層板に用いたものと同様のものを用いることもできる。また加熱加圧成形は、内層材の形成と同様の条件にて行うことができる。このようにして形成された多層積層板の表面に、更にアディティブ法やサブトラクティブ法にてバイアホール形成や回路形成をほどこして、プリント配線板を形成することができる。また更にこのプリント配線板を内層材として上記の工法を繰り返すことにより、更に多層の多層板を形成することができるものである。
【0030】
本発明のリン含有エポキシ樹脂と該組成物を使用して得られた積層板の特性の評価を行った結果、一般式(1)で示される化合物の含有率が0.01〜2.5重量%である一般式(2)で示される化合物とエポキシ樹脂類とを反応して得られるリン含有エポキシ樹脂は硬化剤との反応性が高く、硬化時の樹脂の流れ性と硬化性のバランスが良くプリプレグ、及びそのプリプレグを加熱硬化して得られる積層板は、ハロゲン化物を含有しないで難燃性を有しており、ハンダ耐熱性の優れた樹脂組成物であった。
【0031】
【実施例】
実施例及び比較例を挙げて本発明を具体的に説明するが、本発明はこれらに限定されるものではない。一般式(2)で示される化合物に含有する一般式(1)で示される化合物の含有率はHPLCを用いて測定した。Hewlett Packerd社製Agilent1100seriesの装置を使用し、Imtakt社製Cadenza CD−C18のCD006のカラムを用いた。溶離液として水とメタノールを用い、メタノール60%でサンプル測定を開始し、16分にメタノール100%となるようグラジエントを行った。流速は0.5ml/minとし、UV検出器により波長266nmで測定を行った。また、難燃性はUL(Underwriter Laboratories)規格に準じて測定を行った。ワニスゲルタイムは160℃にて測定をおこなった。銅箔剥離強さはJIS C 6481 5.7に準じて、層間接着力はJIS C 6481 5.7に準じてプリプレグ1枚と残りの3枚の間で剥離を行い測定した。ハンダ耐熱性はJIS C 6481 5.5に準じて280℃で実施し、膨れ又ははがれの有無を目視によって調べ膨れ又ははがれの無いものを○、有るものを×とした。また、硬化物のガラス転移温度、硬化発熱量はセイコーインスツルメンツ株式会社製 Exster DSC6200で測定を行った。硬化発熱量保持率は作成直後のプリプレグの総硬化発熱量を100%とした時、60℃で72時間保存した後のプリプレグの総硬化発熱量を百分率で求めたもので、数字が小さいほど貯蔵安定性が悪いことを示している。
【0032】
(一般式2に示される化合物の構造確認)
一般式1の化合物として構造式1で示されるHCA−HQのHPLCを測定した。溶出時間12.8分から13.2分のピーク成分を分取して、硬化反応の遅延成分をとりだし、FD−MASS、FTIR、プロトンNMRで測定した。MASSの測定結果から分子量は324であり、FTIRの結果をHCA−HQと比較したところ、フェノール性水酸基の減少、ベンゼン3置換体の減少、ベンゼン2置換体の増加が認められた。プロトンNMRの結果から、11種類の化学シフトのうち、2種類のみが他のものと比較して2倍の強度を有していることを確認した。すなわち13個のプロトンのうちの4個は、2個1対の2組のプロトンであることを示す。残りのプロトンはそれぞれ異なるものである。以上のことから12.8分から13.2分のピーク成分は構造式3と確認した。一般式1の化合物として10−(2,7−ジヒドロキシナフチル)−10−ジヒドロ−9−オキサ−10−ホスファフェナントレン−10−オキシドも同様にHPLCの溶出時間20.0分から20.4分のピーク成分をFD−MASS、FTIR、プロトンNMRで測定を行い構造式4であることを確認した。
構造式3
【0033】
【化6】
構造式4
【0034】
【化7】
【0035】
合成例1
攪拌装置、温度計、冷却管、窒素ガス導入装置を備えた4つ口のガラス製セパラブルフラスコに、一般式(2)で示される化合物としてHCA−HQ 31.72重量部とYDF−170(BPF型エポキシ樹脂 東都化成株式会社製)68.28重量部を仕込み、窒素雰囲気下、120℃まで加熱し、そのまま1時間保持した。触媒としてトリフェニルホスフィンを0.31重量部添加して160℃で4時間反応した。HCA−HQの純度は99.5%だった。HCA−HQに含まれる構造式3で示される化合物の含有率は0.01重量%であった。得られたエポキシ樹脂のエポキシ当量は480.0g/eq、リン含有率は3.0重量%であった。
【0036】
合成例2
構造式3で示される化合物の含有率が0.17重量%であるHCA−HQを使用した以外は合成例1と同様な操作を行った。HCA−HQの純度は99.4%だった。得られたエポキシ樹脂のエポキシ当量は484.1g/eq、リン含有率は3.0重量%であった。
合成例3
構造式3で示される化合物の含有率が0.33重量%であるHCA−HQを使用した以外は合成例1と同様な操作を行った。HCA−HQの純度は99.1%だった。得られたエポキシ樹脂のエポキシ当量は488.4g/eq、リン含有率は3.0重量%であった。
【0037】
合成例4
構造式3で示される化合物の含有率が0.65重量%であるHCA−HQを使用した以外は合成例1と同様な操作を行った。HCA−HQの純度は98.7%だった。得られたエポキシ樹脂のエポキシ当量は488.3g/eq、リン含有率は3.0重量%であった。
合成例5
構造式3で示される化合物の含有率が0.95重量%であるHCA−HQを使用した以外は合成例1と同様な操作を行った。HCA−HQの純度は98.2%だった。得られたエポキシ樹脂のエポキシ当量は487.7g/eq、リン含有率は3.0重量%であった。
【0038】
合成例6
構造式3で示される化合物の含有率が1.20重量%であるHCA−HQを使用した以外は合成例1と同様な操作を行った。HCA−HQの純度は97.9%だった。得られたエポキシ樹脂のエポキシ当量は486.3g/eq、リン含有率は3.0重量%であった。
合成例7
合成例1と同様な装置に、HCA(9,10−ジヒドロ−9−オキサ−10−ホスファフェナントレン−10−オキシド)を21.15重量部とトルエンを50重量部仕込み、窒素雰囲気下で75℃まで加温し、溶解した。ここにパラベンゾキノンを30分かけて少量ずつ10.47重量部仕込み、85℃で30分保持した後昇温し、還流温度で3時間反応をおこなった。生成した一般式(2)で示される化合物(具体的には構造式1で示されるHCA−HQ)に含まれる一般式(1)で示される化合物、具体的には構造式3で示される化合物の含有率は2.40重量%であった。また、一般式(2)に示される化合物の純度は95.0重量%であった。これにYDF−170を68.39重量部仕込み、150℃まで加温し、トルエンを還流除去した。トリフェニルホスフィン0.32重量部を添加して160℃で4時間反応した。得られたエポキシ樹脂のエポキシ当量は470.2g/eq、リン含有率は3.0重量%であった。
【0039】
合成例8
合成例1と同様な装置に、一般式(1)で示される化合物、具体的には構造式3で示される化合物の含有率が0.01重量%である一般式(2)で示される化合物(具体的には構造式1で示されるHCA−HQ)を31.09重量部、HCAを0.63重量部、YDF−170を68.28重量部仕込み、合成例1と同様な操作をおこなった。仕込んだHCAとHCA−HQの合計に対して、一般式(2)で示される化合物の純度は97.3重量%であった。得られたエポキシ樹脂のエポキシ当量は480.3g/eq、リン含有率は3.0重量%であった。
合成例9
一般式(1)で示される化合物、具体的には構造式4で示される化合物の含有量が0.15重量%である一般式(2)で示される化合物(具体的には構造式2で示されるHCA−NQ)を26.86重量部、YDF−8170を73.14重量部使用した以外は合成例1と同様な操作をおこなった。一般式(2)で示される化合物の純度は90.1重量%であった。得られたエポキシ樹脂のエポキシ当量は321.8g/eq、リン含有率は2.2重量%であった。
【0040】
合成例10
構造式3で示される化合物の含有率が3.10重量%であるHCA−HQを使用した以外は合成例1と同様な操作を行った。HCA−HQの純度は93.0%だった。得られたエポキシ樹脂のエポキシ当量は471.1g/eq、リン含有率は3.0重量%であった。
合成例11
合成例1と同様な装置にHCA21.15重量部とトルエン40重量部を仕込み、窒素雰囲気下、75℃まで加温し、溶解した。YDF−170を69.13重量部仕込んで溶解し、パラベンゾキノン9.73重量部を2時間かけて少量ずつ添加した。添加終了後、還流温度で3時間保持したのちトルエンを還流除去し、トリフェニルホスフィンを0.32重量部添加して160℃にて4時間反応をおこなった。一般式(2)(具体的には構造式1で示されるHCA−HQ)で示される化合物に含まれる構造式3で示される化合物の含有率は3.50重量%であった。一般式(2)で示される化合物の純度は69.4重量%だった。得られたエポキシ樹脂のエポキシ当量は444.4g/eq、リン含有率は3.0重量%であった。
合成例12
構造式4で示される化合物の含有率が2.60重量%であるHCA−NQを使用した以外は合成例9と同様な操作を行った。HCA−NQの純度は77.0%だった。得られたエポキシ樹脂のエポキシ当量は321.4g/eq、リン含有率は2.2重量%であった。
表1に示す配合処方により、各合成例で得られたエポキシ樹脂、ジシアンジアミド硬化剤、イミダゾール硬化促進剤を配合し、溶剤に溶解して積層板評価を行った。表1および表2に実施例1〜3、8〜9、比較例1〜3、6〜9の結果をまとめる。表3に示す配合処方によりフェノールノボラック樹脂硬化剤、イミダゾール硬化促進剤を配合し、溶剤に溶解してゲルタイムによる反応性評価を行った。表3に実施例10、12,比較例4、10の結果をまとめる。また、表4に実施例13と比較例5において触媒量を調整してゲルタイムを同様に合わせた際の貯蔵安定性評価の結果を硬化発熱量保持率(%)としてまとめる。
【0041】
【表1】
【0042】
【表2】
DICY 日本カーバイト株式会社製 ジシアンジアミド
2E4MZ 四国化成株式会社製 イミダゾール触媒
【0043】
【表3】
【0044】
【表4】
表1,2,3及び4に記載されている物性値から明らかなように、一般式(1)で示される化合物の含有率が高くなると、ゲルタイムが著しく遅くなり硬化反応性に影響を及ぼす。表1、表2でジシアンジアミド硬化剤で評価を行い、表3ではフェノールノボラック樹脂硬化剤で評価を行っている。いずれの硬化剤でも一般式(1)で示される化合物の含有率が高くなると、ゲルタイムが著しく遅くなることから硬化剤の種類によらず影響を及ぼすことが分かる。これは例えば積層板を作成した場合には樹脂分が不足することにより接着力低下、マイグレーションの発生、ハンダ浸漬時の膨れやわれなどの不具合が生じてしまう。また、表4の比較例5の様にゲルタイムを調整するため、硬化触媒の配合量を増やした場合においては、硬化発熱量保持率が著しく小さくなり、プリプレグでの貯蔵安定性が悪くなることによって長期保存が出来ない等の問題がある。
【0045】
【産業上の利用可能性】
一般式(1)で示される化合物の含有率が2.5重量%以下である一般式(2)の化合物を用いることにより、ゲルタイムが遅延することなく接着力、耐マイグレーション、耐ハンダ浸漬性、プリプレグでの貯蔵安定性に優れたリン含有エポキシ樹脂および電子回路基板用材料を提供することができる。
【Technical field】
[0001]
The present invention relates to a copper clad laminate used for an electronic circuit board, a film material, an epoxy resin composition for producing a copper foil with resin, and a sealing material used for an electronic component, a molding material, a casting material, an adhesive, an electrical insulation The present invention relates to a phosphorus-containing epoxy resin and a phosphorus-containing epoxy resin composition useful as a coating material, a production method thereof, a curable resin composition using the resin, and a cured product.
[Background]
[0002]
Epoxy resins are widely used in electronic parts, electrical equipment, automobile parts, FRP, sports equipment and the like because of their excellent adhesiveness, heat resistance and moldability. In particular, copper-clad laminates and encapsulants used in electronic parts and electrical equipment are strongly required to have safety such as fire prevention and delay. Brominated epoxy resins having these characteristics have been used so far. Etc. are used. Although it has a problem that the specific gravity is large, flame retardancy is imparted by introducing halogen, especially bromine, into the epoxy resin, and the epoxy group has high reactivity and excellent curability can be obtained. Brominated epoxy resins are positioned as useful electronic and electrical materials.
However, when looking at recent electrical equipment, the tendency to place the highest importance on so-called lightness and thinness is becoming increasingly strong. Under such social demands, halides with large specific gravity are undesirable materials from the viewpoint of the recent trend of weight reduction, and when used at high temperatures for a long period of time, the halides dissociate, thereby causing wiring. There is a risk of corrosion. In addition, the use of halogens has become a problem from the viewpoint of environmental safety because it generates harmful substances such as halides when used electronic parts and electrical devices burn, and alternative materials have been studied. It became so.
[0003]
As a known document relating to the compound represented by the general formula (2) described in the claims, Patent Document 1 includes HCA-HQ (10- (2,5-dihydroxyphenyl) -10-dihydro- manufactured by Sanko Co., Ltd.). 9-oxa-10-phosphaphenanthrene-10-oxide)) and epoxy resins are reacted at a predetermined molar ratio, and a thermosetting flame-retardant resin is disclosed. Patent Document 2 discloses a phosphorus-containing epoxy resin obtained by reacting an epoxy compound having at least two epoxy groups with diphenylphosphinyl hydroquinone. Patent Document 3 discloses a method for producing a flame-retardant epoxy resin characterized by reacting an epoxy resin, a phosphine compound having an aromatic group on a phosphorus atom, and a quinone compound in the presence of an organic solvent. Patent Document 4 discloses a phosphorus-containing epoxy resin and a phosphorus-containing flame-retardant epoxy resin composition obtained by reacting a phosphorus-containing polyhydric phenol compound represented by the general formula (2) with an epoxy resin. Patent Document 5 discloses that 9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide, 1,4-benzoquinone and / or 1,4-naphthoquinone have a total water content in the reaction system. Step 1 to obtain a reaction composition by controlling the reaction to be 0.3% by mass or less based on the total amount of 9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide used in the reaction Then, without purifying the reaction composition obtained in the step 1, the step 2 of reacting with the bisphenol A type epoxy resin and / or the bisphenol F type epoxy resin is performed to produce a phosphorus-containing flame-retardant bisphenol type epoxy resin. A method is disclosed.
[Prior art documents]
[Patent Literature]
[0004]
[Patent Document 1] Japanese Patent Laid-Open No. 04-1162
[Patent Document 2] Japanese Patent Laid-Open No. 05-214070
[Patent Document 3] Japanese Patent Laid-Open No. 2000-309624
[Patent Document 4] Japanese Patent Application Laid-Open No. 2002-265562
[Patent Document 5] Japanese Patent Laid-Open No. 2006-342217
However, none of the patent documents describes the curability with a curing agent.
Patent Document 6 describes monofunctional organophosphorus compounds containing the structural formula 4 which is a compound represented by the general formula (1), and “reacts with an epoxy group to form a so-called pendant in a resin. In order to form, it is necessary to use an amount that is sufficient to exhibit flame retardancy, because the crosslinking density of the epoxy resin is reduced and the curing rate is delayed, the heat resistance is lowered, or the mechanical strength is lowered. The amount of a monofunctional organophosphorus compound that exhibits sufficient flame retardancy as a reactive organophosphorus compound (generally, several dozen to several dozen). %) Is used, the crosslinking density is reduced and there is a problem such as a delay in the curing rate.
[Patent Document 6] Japanese Patent Laid-Open No. 2000-154234
[0005]
[Non-Patent Document 1] IGMCampbell and IDRStevens, Chemical Communications, pp. 505-506 (1966)
[Non-Patent Document 2] (Zh. Obshch. Khim.), 42 (11), pages 241-2418 (1972)
[Patent Document 7] JP-A-60-126293
[Patent Document 8] Japanese Patent Laid-Open No. 61-236787
[Patent Document 9] JP-A-5-331179
[Patent Document 10] JP 05-39345 A
SUMMARY OF THE INVENTION
[Problems to be solved by the invention]
[0006]
As a result of examining the reactivity of various phosphorus-containing epoxy resins with a curing agent, the present inventor has found that there is a significant difference in reactivity depending on the obtained phosphorus-containing epoxy resins. When the gel time, which is an indicator of the reactivity of the epoxy resin, is long, for example, the resin flows too much during curing during lamination and crimping, resulting in a lack of resin content, resulting in a decrease in adhesion and migration. Generation, problems such as blistering during solder immersion will occur. In addition, when the gel time is adjusted by increasing the blending amount of the curing catalyst, there are problems such as poor storage stability of the prepreg and long-term storage.
[Means for Solving the Problems]
[0007]
As a result of intensive studies to solve the above problems, the present inventor has a content of the compound represented by the general formula (1) of more than 2.5% by weight among monofunctional organophosphorus compounds. When using a compound represented by a general formula (2), it was found that the curing reactivity of the resulting phosphorus-containing epoxy resin was significantly impaired, and the phosphorus-containing epoxy resin of the present invention was completed. The means for solving the problem is as described in the claims.
(1) The content of the compound represented by the general formula (1) is 0.01 ~ 2.5 weight %so A phosphorus-containing epoxy resin obtained by reacting a compound represented by a general formula (2) with an epoxy resin.
[0008]
[Chemical 1]
[0009]
[Chemical 2]
[0010]
n: 0 or 1
R1 and R2 each represent hydrogen or a hydrocarbon group, and each may be different or the same, and may be linear, branched or cyclic. R1 and R2 may be bonded to form a ring structure.
B represents any of benzene, biphenyl, naphthalene, anthracene, phenanthrene, and their hydrocarbon substitutes.
[0011]
(2) The compound represented by the general formula (2) having a content of the compound represented by the general formula (1) of 2.5% by weight or less is reacted with an epoxy resin. A method for producing a phosphorus-containing epoxy resin according to 1.
(3) A phosphorus-containing vinyl ester resin characterized by using the phosphorus-containing epoxy resin according to any one of (1) to (2).
(4) A phosphorus-containing epoxy resin composition comprising the phosphorus-containing epoxy resin according to any one of (1) to (2) as an essential component and a curing agent.
(5) A radical polymerizable resin composition comprising the phosphorus-containing vinyl ester resin of (3) as an essential component and a radical polymerization initiator and / or a curing agent.
(6) A material for an electronic circuit board obtained by using the phosphorus-containing epoxy resin composition of (4).
(7) A sealing material obtained using the phosphorus-containing epoxy resin composition of (4).
(8) A casting material obtained using the phosphorus-containing epoxy resin composition of (4).
(9) Hardened | cured material formed by hardening | curing the phosphorus containing epoxy resin composition in any one of said (4)-(8), radically polymerizable resin composition, the material for electronic circuit boards, a sealing material, and a casting material. .
[0012]
【Effect of the invention】
[0013]
BEST MODE FOR CARRYING OUT THE INVENTION
The phosphorus-containing epoxy resin of the present invention is obtained by reacting an epoxy resin with a compound represented by the general formula (2), and is represented by the general formula (1) existing in the compound represented by the general formula (2). The compound is 0.01 to 2.5% by weight.
Examples of the compound represented by the general formula (2) used in the present invention include Non-Patent Document 1, Non-Patent Document 2, which is a general Russian magazine, Patent Document 7, Patent Document 8, Patent Document 9, and Patent Document 10. It can be obtained by the method shown in FIG. In Patent Literature 7, Patent Literature 8, and Patent Literature 9, HCA (9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide) is always reacted with a quinone compound in a state where an equivalent amount or more exists. And the use of a reaction solvent as a washing solvent after the reaction is described. This is for the purpose of removing excessive phosphorus compounds.
[0014]
Further, the compound represented by the general formula (2) is produced by the methods disclosed in Non-Patent Documents 1 and 2, and Patent Documents 7 to 10, and the production cost is increased by purification means such as washing and recrystallization. Those with 99% or more are known. At that time, the compound represented by the general formula (1) is by-produced together with other impurities. The reaction formula is shown in Formula 1. Reaction Formula 1 is an example in which the compound represented by General Formula (2) and the compound represented by General Formula (1) are formed, but the compound of General Formula (3) represented in Reaction Formula 1 remains. is there.
[0015]
[Chemical 3]
n: 0 or 1
[0016]
R1 and R2 each represent hydrogen or a hydrocarbon group, and each may be different or the same, and may be linear, branched or cyclic. R1 and R2 may be bonded to form a ring structure.
B represents any of benzene, biphenyl, naphthalene, anthracene, phenanthrene, and their hydrocarbon substitutes.
The inventor of the present invention uses an amount of the epoxy resin obtained by using the compound represented by the general formula (2) containing the compound represented by the general formula (1) as an impurity component so that the crosslinking density decreases. Even when the content of the compound represented by the general formula (1) is small, it was found that the reaction rate is remarkably delayed, and the present invention has been achieved, which is unthinkable with conventional monofunctional phenols. It was found that the influence of the delay effect on the reaction rate of the epoxy resin was specifically large. Therefore, in addition to refining the compound represented by the general formula (2) at a production cost more than necessary to obtain a high purity, the management of the components of the compound represented by the general formula (1) It is possible to solve the problems when used for materials and casting materials.
When the compound represented by the general formula (2) in which the content of the compound represented by the general formula (1) is 2.5% by weight or less is used, there is little influence on the reactivity between the epoxy resin and the curing agent. . That is, the compound represented by the general formula (2) having a content of the compound represented by the general formula (1) of 2.5% by weight or less, preferably 2.0% by weight or less is used. The preferable content rate of the compound shown by General formula (1) contained in the compound shown by General formula (2) is 2 weight% or less. A more preferable content is 1% by weight or less, desirably 0.5% or less. In the case of a phosphorus-containing epoxy resin obtained by reacting the compound represented by the general formula (2) and the epoxy resin containing the compound represented by the general formula (1) in an amount exceeding 2.5% by weight, a curing agent Since the reactivity with is significantly delayed, the practicality is inferior.
[0017]
The compound represented by the general formula (2) used in the present invention can be produced by the methods disclosed in Non-patent Documents 1 and 2 and Patent Documents 7 to 10, and extraction, washing, and recrystallization after the production. The compound represented by the general formula (1) can be reduced to 2.5% by weight or less by a purification operation such as distillation. Moreover, it is good also considering the compound shown by General formula (1) as 2.5 weight% or less by the reaction conditions of the compound shown by General formula (2) irrespective of these methods.
Specific examples of the compound represented by the general formula (2) include HCA-HQ represented by the structural formula 1 (10- (2,5-dihydroxyphenyl) -10-dihydro-9-oxa-10 manufactured by Sanko Co., Ltd.). -Phosphaphenanthrene-10-oxide), HCA-NQ represented by structural formula 2 (10- (2,7-dihydroxynaphthyl) -10H-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide) , PPQ (Dioxinphosphinylhydroquinone), Diphenylphosphinylnaphthoquinone, CPHO-HQ (Cyclooctylenephosphinyl-1,4-benzenediol manufactured by Nippon Chemical Industry Co., Ltd.), Cyclooctylenephos Finyl-1,4-naphthalenediol, phosphorus-containing disclosed in JP-A-2002-265562 Phenol compounds and the like may be used in combination of two or more kinds. However, the content of the compound represented by the general formula (1) needs to be 0.01 to 2.5% by weight.
Structural formula 1
[0018]
[Formula 4]
Structural formula 2
[0019]
[Chemical formula 5]
[0020]
It is desirable that the epoxy resins that react with the compound represented by the general formula (2) whose content of the compound represented by the general formula (1) is 0.01 to 2.5% by weight have a glycidyl ether group. Specifically, Epototo YDC-1312, ZX-1027 (Hydroquinone type epoxy resin manufactured by Toto Kasei Co., Ltd.), ZX-1251 (Biphenol type epoxy resin manufactured by Toto Kasei Co., Ltd.), Epototo YD-127, Epototo YD-128, Epototo YD-8125, Epototo YD-825GS, Epototo YD-011, Epototo YD-900, Epototo YD-901 (BPA type epoxy resin manufactured by Tohto Kasei Co., Ltd.), Epototo YDF-170, Epototo YDF-8170, Epototo YDF-70G Epototo YDF-2001 (BPF type epoxy resin made by Toto Kasei Co., Ltd.), Epototo YDPN-638 (Phenol novolac type epoxy resin made by Toto Kasei Co., Ltd.), Epototo YDCN-701 (Toto (Cresol novolac type epoxy resin manufactured by Kasei Co., Ltd.), ZX-1201 (Bisphenol fluorene type epoxy resin manufactured by Toto Kasei Co., Ltd.), NC-3000 (Biphenylaralkylphenol type epoxy resin manufactured by Nippon Kayaku Co., Ltd.), EPPN-501H, EPPN -502H (Nippon Kayaku Co., Ltd. polyfunctional epoxy resin) ZX-1355 (Tohto Kasei Co., Ltd. naphthalenediol type epoxy resin), ESN-155, ESN-185V, ESN-175 (Toto Kasei Co., Ltd. β-naphthol aralkyl) Type epoxy resin), ESN-355, ESN-375 (manufactured by Toto Kasei Co., Ltd., dinaphthol aralkyl type epoxy resin), ESN-475V, ESN-485 (manufactured by Toto Kasei Co., Ltd., α-naphthol aralkyl type epoxy resin), etc. Fenault Epoxy resin produced from a phenolic compound such as resin and an epoxy resin produced from epihalohydrin, Epototo YH-434, Epototo YH-434GS (diaminodiphenylmethane tetraglycidyl ether manufactured by Toto Kasei Co., Ltd.), and an epoxy produced from epihalohydrin Resin, epoxy resin produced from carboxylic acids such as YD-171 (Dimer acid type epoxy resin manufactured by Tohto Kasei Co., Ltd.) and epihalohydrin, and the like, are not limited to these, but two or more types are used in combination. Also good.
[0021]
In the method for producing the phosphorus-containing epoxy resin of the present invention, the content of the compound represented by the general formula (1) is 0.01 to 2.5% by weight, as in the reaction of ordinary polyfunctional phenols and epoxy resins. The compound represented by the general formula (2) and the epoxy resin are charged and reacted by heating and melting. The reaction is carried out at 100 to 200 ° C., more preferably 120 to 180 ° C. with stirring as the reaction temperature. This reaction can improve productivity by using a catalyst if necessary. Specific catalysts include tertiary amines such as benzyldimethylamine, quaternary ammonium salts such as tetramethylammonium chloride, phosphines such as triphenylphosphine and tris (2,6-dimethoxyphenyl) phosphine, Various catalysts such as phosphonium salts such as phenylphosphonium bromide and imidazoles such as 2methylimidazole and 2ethyl4-methylimidazole can be used. A reaction solvent may be used depending on the viscosity during the reaction. Specific examples include benzene, toluene, xylene, cyclopentanone, cyclohexanone, and the like, but are not limited thereto, and two or more kinds may be used.
[0022]
Moreover, you may use together various epoxy resin modifiers as needed. Examples of the modifier include bisphenol A, bisphenol F, bisphenol AD, tetrabutyl bisphenol A, hydroquinone, methyl hydroquinone, dimethyl hydroquinone, dibutyl hydroquinone, resorcin, methyl resorcin, biphenol, tetramethyl biphenol, dihydroxy naphthalene, dihydroxy diphenyl ether, dihydroxy stilbene, Various phenols such as phenol novolak resin, cresol novolak resin, bisphenol A novolak resin, dicyclopentadiene phenol resin, phenol aralkyl resin, naphthol novolak resin, terpene phenol resin, heavy oil modified phenol resin, brominated phenol novolak resin Various phenols and hydroxybenzaldehyde, Polyhydric phenol resin obtained by condensation reaction with various aldehydes such as crotonaldehyde, glyoxal, aniline, phenylenediamine, toluidine, xylidine, diethyltoluenediamine, diaminodiphenylmethane, diaminodiphenylethane, diaminodiphenylpropane, diaminodiphenyl ketone , Diaminodiphenyl sulfide, diaminodiphenyl sulfone, bis (aminophenyl) fluorene, diaminodiethyldimethyldiphenylmethane, diaminodiphenyl ether, diaminobenzanilide, diaminobiphenyl, dimethyldiaminobiphenyl, biphenyltetraamine, bisaminophenylanthracene, bisaminophenoxybenzene, bis Aminophenoxyphenyl ether, bisaminophenoxy Phenyl, bis aminophenoxy phenyl sulfone, bis aminophenoxy phenyl propane, amine compounds such as diamino naphthalene.
[0023]
The phosphorus content of the phosphorus-containing epoxy resin of the present invention is preferably 0.3 to 5% by weight, more preferably 0.5 to 3.6% by weight, still more preferably 1.0 to 3.1% by weight, The phosphorus content in the organic component in the phosphorus-containing epoxy resin composition comprising the phosphorus-containing epoxy resin is preferably 0.2 to 4% by weight, more preferably 0.4 to 3.5% by weight, still more preferably. Is 0.6 to 3% by weight. If the content of phosphorus in the organic component in the phosphorus-containing epoxy resin composition is 0.2% by weight or less, it is difficult to ensure flame retardancy, and if it exceeds 5% by weight, the heat resistance may be adversely affected. It is desirable to adjust from 0.2 wt% to 5 wt%.
The epoxy equivalent of the phosphorus-containing epoxy resin used in the present invention is preferably 200 to 1500 g / eq, more preferably 250 to 1000 g / eq, and still more preferably 300 to 800 g / eq. When the epoxy equivalent is less than 200 g / eq, the adhesiveness is inferior, and when it exceeds 1500 g / eq, the heat resistance is adversely affected, so it is desirable to adjust to 200-1500 g / eq.
As the curing agent of the phosphorus-containing epoxy resin composition of the present invention, it is possible to use usually used curing agents for epoxy resins such as various phenol resins, acid anhydrides, amines, hydrazides, and acidic polyesters. These curing agents may be used alone or in combination of two or more.
[0024]
Curing accelerators such as tertiary amines, quaternary ammonium salts, phosphines, and imidazoles can be blended with the phosphorus-containing epoxy resin composition of the present invention as necessary.
In the phosphorus-containing epoxy resin composition of the present invention, an organic solvent can also be used for viscosity adjustment. Examples of organic solvents that can be used include amides such as N, N-dimethylformamide, ethers such as ethylene glycol monomethyl ether, ketones such as acetone and methyl ethyl ketone, alcohols such as methanol and ethanol, benzene and toluene. Although aromatic hydrocarbons etc. are mentioned, it is not limited to these, You may use only 1 type in these solvents, or 2 or more types may be used, and it is 30 to 80 weight% as an epoxy resin density | concentration. It can mix | blend in the range of.
[0025]
The filler that can be used in the phosphorus-containing epoxy resin composition of the present invention includes aluminum hydroxide, magnesium hydroxide, talc, calcined talc, clay, kaolin, titanium oxide, glass powder, fine powder silica, fused silica, Examples include inorganic fillers such as crystalline silica and silica balloon, but pigments and the like may be blended. The reason for using a general inorganic filler is an improvement in impact resistance. Moreover, when metal hydroxides, such as aluminum hydroxide and magnesium hydroxide, are used, it acts as a flame retardant aid and can ensure flame retardancy even if the phosphorus content is small. In particular, if the blending amount is not 10% or more, the effect of impact resistance is small. However, if the blending amount exceeds 150%, the adhesiveness, which is a necessary item for use in a laminated board, is lowered. Moreover, organic fillers, such as fibrous fillers, such as a silica, glass fiber, a pulp fiber, a synthetic fiber, a ceramic fiber, fine particle rubber, and a thermoplastic elastomer, can also be contained in the said resin composition.
Examples of the electronic circuit board material obtained from the phosphorus-containing epoxy resin composition include a resin sheet, a metal foil with a resin, a prepreg, and a laminate. The method for producing the resin sheet is not particularly limited. For example, a phosphorus-containing epoxy resin composition as described above is preferably 5 on a carrier film that does not dissolve in an epoxy resin composition such as a polyester film or a polyimide film. After coating to a thickness of ˜100 μm, it can be dried by heating at 100 to 200 ° C. for 1 to 40 minutes to form a sheet. A resin sheet is generally formed by a method called a casting method. At this time, if the sheet to which the phosphorus-containing epoxy resin composition is applied is previously subjected to a surface treatment with a release agent, the molded resin sheet can be easily peeled off. Here, the thickness of the resin sheet is preferably 5 to 80 μm.
[0026]
Next, the resin-coated metal foil obtained from the phosphorus-containing epoxy resin composition will be described. As the metal foil, copper, aluminum, brass, nickel or the like alone, alloy, or composite metal foil can be used. It is preferable to use a metal foil having a thickness of 9 to 70 μm. The method for producing a flame retardant resin composition containing a phosphorus-containing epoxy resin and a metal foil with a resin from the metal foil is not particularly limited. For example, the phosphorus-containing epoxy resin composition is formed on one surface of the metal foil. A resin varnish whose viscosity is adjusted with a solvent is applied using a roll coater or the like, and then dried by heating to semi-cure the resin component (B-stage) to form a resin layer. In semi-curing the resin component, for example, it can be dried by heating at 100 to 200 ° C. for 1 to 40 minutes. Here, as for the thickness of the resin part of metal foil with resin, it is desirable to form in 5-110 micrometers.
Next, the prepreg obtained using the above phosphorus-containing epoxy resin composition will be described. As the sheet-like substrate, inorganic fibers such as glass, or woven or non-woven fabrics of organic fibers such as polyester, polyamine, polyacryl, polyimide, Kevlar, etc. can be used, but it is not limited thereto. The method for producing the prepreg from the phosphorus-containing epoxy resin composition and the base material is not particularly limited. For example, the base material is impregnated by immersing the epoxy resin composition in a resin varnish whose viscosity is adjusted with a solvent. Thereafter, the resin component is obtained by heat-drying and semi-curing (B-stage), and can be heat-dried at 100 to 200 ° C. for 1 to 40 minutes, for example. Here, the amount of resin in the prepreg is preferably 30 to 80% by weight.
[0027]
Next, a method for producing a laminate using the above resin sheet, metal foil with resin, prepreg and the like will be described. When a prepreg is used to form a laminate, one or more prepregs are laminated, a metal foil is placed on one or both sides to form a laminate, and this laminate is heated and pressurized to be laminated and integrated. . Here, as the metal foil, a single, alloy, or composite metal foil of copper, aluminum, brass, nickel or the like can be used. Conditions for heating and pressurizing the laminate may be adjusted as appropriate under the conditions for curing the epoxy resin composition, but heating and pressurizing may be performed. However, if the pressure of the pressurization is too low, bubbles remain in the resulting laminate. In addition, since electrical characteristics may deteriorate, it is preferable to apply pressure under conditions that satisfy the moldability. For example, the temperature is 160 to 220 ° C. and the pressure is 49.0 to 490.3 N / cm. 2 (5-50kgf / cm 2 ), And the heating and pressing time can be set to 40 to 240 minutes, respectively. Furthermore, a multilayer board can be produced by using the single-layer laminated board thus obtained as an inner layer material. In this case, first, a circuit is formed on the laminate by an additive method, a subtractive method, or the like, and the formed circuit surface is treated with an acid solution to perform a blackening process to obtain an inner layer material. An insulating layer is formed with a resin sheet, a metal foil with resin, or a prepreg on one or both sides of the inner layer material, and a multilayer plate is formed by forming a conductor layer on the surface of the insulating layer. Is. When forming an insulating layer with a resin sheet, a resin deposit sheet is arrange | positioned on the circuit formation surface of a some inner layer material, and a laminated body is formed. Or a resin sheet is arrange | positioned between the circuit formation surface of an inner-layer material, and metal foil, and a laminated body is formed. Then, the laminate is heated and pressed to be integrally formed, thereby forming a cured product of the resin sheet as an insulating layer and forming a multilayered inner layer material. Alternatively, the inner layer material and the metal foil as the conductor layer are formed by using a cured resin sheet as an insulating layer. Here, as a metal foil, the thing similar to what was used for the laminated board used as an inner layer material can also be used. Further, the heating and pressing can be performed under the same conditions as the formation of the inner layer material. When an insulating layer is formed by applying a resin to a laminate, the outermost circuit forming surface resin of the inner layer material is a phosphorus-containing epoxy resin composition or a flame-retardant epoxy resin composition containing a phosphorus-containing epoxy resin. Preferably, after coating to a thickness of 5 to 100 μm, it is dried by heating at 100 to 200 ° C. for 1 to 90 minutes to form a sheet. It is generally formed by a method called a casting method. The thickness after drying is preferably 5 to 80 μm. A printed wiring board can be formed by further forming via holes and circuits on the surface of the multilayer laminate formed as described above by an additive method or a subtractive method. Further, by repeating the above method using this printed wiring board as an inner layer material, a multilayer board can be formed. When the insulating layer is formed of a metal foil with resin, the metal foil with resin is overlapped on the circuit formation surface of the inner layer material so that the resin layer of the metal foil with resin faces the circuit formation surface of the inner layer material. Arrange to form a laminate. Then, by heating and pressing this laminate to integrally form it, a cured product of the resin layer of the resin-coated metal foil is formed as an insulating layer, and the outer metal foil is formed as a conductor layer. Here, the heat and pressure molding can be performed under the same conditions as the formation of the inner layer material. When an insulating layer is formed with a prepreg, a laminate is formed by placing one or a plurality of prepregs laminated on the circuit forming surface of the inner layer material, and further placing a metal foil on the outside thereof. . Then, the laminate is heated and pressed to be integrally formed, whereby a cured product of the prepreg is formed as an insulating layer, and the outer metal foil is formed as a conductor layer. Here, as a metal foil, the thing similar to what was used for the laminated board used as an inner layer board can also be used. Further, the heating and pressing can be performed under the same conditions as the formation of the inner layer material. A printed wiring board can be formed by further forming via holes and circuits on the surface of the multilayer laminate formed as described above by an additive method or a subtractive method. Further, by repeating the above method using this printed wiring board as an inner layer material, a multilayer board can be formed.
[0030]
As a result of evaluating the characteristics of the laminated board obtained using the phosphorus-containing epoxy resin of the present invention and the composition, the content of the compound represented by the general formula (1) is 0.01 to 2.5 wt. %, The phosphorus-containing epoxy resin obtained by reacting the compound represented by the general formula (2) with the epoxy resin is highly reactive with the curing agent, and there is a balance between the flowability of the resin and the curability during curing. A prepreg and a laminate obtained by heat-curing the prepreg were flame retardant without containing a halide and were a resin composition having excellent solder heat resistance.
[0031]
【Example】
EXAMPLES The present invention will be specifically described with reference to examples and comparative examples, but the present invention is not limited to these. The content rate of the compound shown by General formula (1) contained in the compound shown by General formula (2) was measured using HPLC. An Agilent 1100 series device manufactured by Hewlett Packard was used, and a column of CD006 of Cadenza CD-C18 manufactured by Imtakt was used. Water and methanol were used as eluents, sample measurement was started with 60% methanol, and a gradient was made so as to be 100% methanol in 16 minutes. The flow rate was 0.5 ml / min, and measurement was performed with a UV detector at a wavelength of 266 nm. In addition, flame retardancy was measured according to UL (Underwriter Laboratories) standards. The varnish gel time was measured at 160 ° C. The copper foil peel strength was measured in accordance with JIS C 6481 5.7, and the interlayer adhesion was measured by peeling between one prepreg and the remaining three sheets in accordance with JIS C 6481 5.7. Solder heat resistance was carried out at 280 ° C. according to JIS C 6481 5.5, and the presence or absence of swelling or peeling was examined by visual inspection, and the case where there was no swelling or peeling was rated as “X”. Moreover, the glass transition temperature of the hardened | cured material and the hardening calorific value were measured by Seiko Instruments Inc. Exter DSC6200. Curing calorific value retention rate is the percentage of the total curing calorific value of the prepreg after being stored at 60 ° C for 72 hours when the total curing calorific value of the prepreg immediately after preparation is 100%. It shows that stability is bad.
[0032]
(Confirmation of the structure of the compound represented by the general formula 2)
HPLC of HCA-HQ represented by Structural Formula 1 as a compound of General Formula 1 was measured. A peak component having an elution time of 12.8 minutes to 13.2 minutes was collected, a delayed component of the curing reaction was taken out, and measured by FD-MASS, FTIR, and proton NMR. From the MASS measurement result, the molecular weight was 324, and when the FTIR result was compared with HCA-HQ, a decrease in phenolic hydroxyl group, a decrease in benzene 3-substitution, and an increase in benzene 2-substitution were observed. From the results of proton NMR, it was confirmed that only 2 types out of 11 types of chemical shifts were twice as strong as the others. That is, four of the 13 protons indicate two pairs of two protons. The remaining protons are different. From the above, the peak component from 12.8 minutes to 13.2 minutes was confirmed as structural formula 3. As a compound of the general formula 1, 10- (2,7-dihydroxynaphthyl) -10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide is similarly eluted with an HPLC elution time of 20.0 minutes to 20.4 minutes. The peak component was measured by FD-MASS, FTIR, and proton NMR and confirmed to be structural formula 4.
Structural formula 3
[0033]
[Chemical 6]
Structural formula 4
[0034]
[Chemical 7]
[0035]
Synthesis example 1
In a four-necked glass separable flask equipped with a stirrer, a thermometer, a condenser, and a nitrogen gas introduction device, 31.72 parts by weight of HCA-HQ and YDF-170 (YDF-170) as a compound represented by the general formula (2) BPF type epoxy resin (manufactured by Toto Kasei Co., Ltd.) was charged with 68.28 parts by weight, heated to 120 ° C. in a nitrogen atmosphere, and held for 1 hour. 0.31 part by weight of triphenylphosphine was added as a catalyst and reacted at 160 ° C. for 4 hours. The purity of HCA-HQ was 99.5%. The content rate of the compound shown by Structural formula 3 contained in HCA-HQ was 0.01 weight%. The epoxy equivalent of the obtained epoxy resin was 480.0 g / eq, and the phosphorus content was 3.0% by weight.
[0036]
Synthesis example 2
The same operation as in Synthesis Example 1 was performed except that HCA-HQ having a content of the compound represented by Structural Formula 3 of 0.17% by weight was used. The purity of HCA-HQ was 99.4%. The epoxy equivalent of the obtained epoxy resin was 484.1 g / eq, and the phosphorus content was 3.0% by weight.
Synthesis example 3
The same operation as in Synthesis Example 1 was performed except that HCA-HQ having a content of the compound represented by Structural Formula 3 of 0.33% by weight was used. The purity of HCA-HQ was 99.1%. The epoxy equivalent of the obtained epoxy resin was 488.4 g / eq, and the phosphorus content was 3.0% by weight.
[0037]
Synthesis example 4
The same operation as in Synthesis Example 1 was performed except that HCA-HQ having a content of the compound represented by Structural Formula 3 of 0.65% by weight was used. The purity of HCA-HQ was 98.7%. The epoxy equivalent of the obtained epoxy resin was 488.3 g / eq, and the phosphorus content was 3.0% by weight.
Synthesis example 5
The same operation as in Synthesis Example 1 was performed except that HCA-HQ having a content of the compound represented by Structural Formula 3 of 0.95% by weight was used. The purity of HCA-HQ was 98.2%. The epoxy equivalent of the obtained epoxy resin was 487.7 g / eq, and the phosphorus content was 3.0% by weight.
[0038]
Synthesis Example 6
The same operation as in Synthesis Example 1 was performed except that HCA-HQ having a content of the compound represented by Structural Formula 3 of 1.20% by weight was used. The purity of HCA-HQ was 97.9%. The epoxy equivalent of the obtained epoxy resin was 486.3 g / eq, and the phosphorus content was 3.0% by weight.
Synthesis example 7
An apparatus similar to that of Synthesis Example 1 was charged with 21.15 parts by weight of HCA (9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide) and 50 parts by weight of toluene, and 75% in a nitrogen atmosphere. Warm up to ° C and dissolve. To this, 10.47 parts by weight of parabenzoquinone was charged little by little over 30 minutes, maintained at 85 ° C. for 30 minutes, then heated, and reacted at reflux temperature for 3 hours. The compound represented by the general formula (1) contained in the compound represented by the general formula (2) (specifically, HCA-HQ represented by the structural formula 1), specifically the compound represented by the structural formula 3. The content of was 2.40% by weight. Further, the purity of the compound represented by the general formula (2) was 95.0% by weight. This was charged with 68.39 parts by weight of YDF-170, heated to 150 ° C., and toluene was removed under reflux. 0.32 part by weight of triphenylphosphine was added and reacted at 160 ° C. for 4 hours. The epoxy equivalent of the obtained epoxy resin was 470.2 g / eq, and the phosphorus content was 3.0% by weight.
[0039]
Synthesis Example 8
In the same apparatus as in Synthesis Example 1, the compound represented by the general formula (2) in which the content of the compound represented by the general formula (1), specifically the compound represented by the structural formula 3, is 0.01% by weight. (Specifically, HCA-HQ represented by Structural Formula 1) was charged at 31.09 parts by weight, HCA at 0.63 parts by weight, and YDF-170 at 68.28 parts by weight, and the same operation as in Synthesis Example 1 was performed. It was. The purity of the compound represented by the general formula (2) was 97.3% by weight with respect to the total of charged HCA and HCA-HQ. The epoxy equivalent of the obtained epoxy resin was 480.3 g / eq, and the phosphorus content was 3.0% by weight.
Synthesis Example 9
The compound represented by the general formula (1), specifically the compound represented by the general formula (2) having a content of 0.15% by weight of the compound represented by the structural formula 4 (specifically, in the structural formula 2) The same operation as in Synthesis Example 1 was performed except that 26.86 parts by weight of HCA-NQ) shown and 73.14 parts by weight of YDF-8170 were used. The purity of the compound represented by the general formula (2) was 90.1% by weight. The epoxy equivalent of the obtained epoxy resin was 321.8 g / eq, and the phosphorus content was 2.2% by weight.
[0040]
Synthesis Example 10
The same operation as in Synthesis Example 1 was performed except that HCA-HQ having a content of the compound represented by Structural Formula 3 of 3.10% by weight was used. The purity of HCA-HQ was 93.0%. The epoxy equivalent of the obtained epoxy resin was 471.1 g / eq, and the phosphorus content was 3.0% by weight.
Synthesis Example 11
In the same apparatus as in Synthesis Example 1, 21.15 parts by weight of HCA and 40 parts by weight of toluene were charged, heated to 75 ° C. under a nitrogen atmosphere, and dissolved. 69.13 parts by weight of YDF-170 was charged and dissolved, and 9.73 parts by weight of parabenzoquinone was added little by little over 2 hours. After completion of the addition, the mixture was kept at the reflux temperature for 3 hours, and then toluene was removed by reflux. Then, 0.32 parts by weight of triphenylphosphine was added, and the reaction was carried out at 160 ° C. for 4 hours. The content of the compound represented by the structural formula 3 contained in the compound represented by the general formula (2) (specifically, HCA-HQ represented by the structural formula 1) was 3.50% by weight. The purity of the compound represented by the general formula (2) was 69.4% by weight. The epoxy equivalent of the obtained epoxy resin was 444.4 g / eq, and the phosphorus content was 3.0% by weight.
Synthesis Example 12
The same operation as in Synthesis Example 9 was performed except that HCA-NQ in which the content of the compound represented by Structural Formula 4 was 2.60% by weight was used. The purity of HCA-NQ was 77.0%. The epoxy equivalent of the obtained epoxy resin was 321.4 g / eq, and the phosphorus content was 2.2% by weight.
According to the formulation shown in Table 1, the epoxy resin, dicyandiamide curing agent, and imidazole curing accelerator obtained in each synthesis example were blended and dissolved in a solvent to evaluate the laminate. Tables 1 and 2 show Examples 1 to 3, 8 ~ 9, Comparative Examples 1-3 6-9 Summarize the results. A phenol novolak resin curing agent and an imidazole curing accelerator were blended according to the blending formulation shown in Table 3, dissolved in a solvent, and evaluated for reactivity by gel time. Table 3 shows Example 10. , 12, Comparative Example 4 10 Summarize the results. Table 4 summarizes the results of storage stability evaluation when the amount of catalyst is adjusted in Example 13 and Comparative Example 5 to match the gel time in the same manner as the retention rate (%) of curing heat generation.
[0041]
[Table 1]
[0042]
[Table 2]
DICY Dicyandiamide manufactured by Nippon Carbide Corporation
2E4MZ Shikoku Kasei Co., Ltd. Imidazole catalyst
[0043]
[Table 3]
[0044]
[Table 4]
As is clear from the physical property values described in Tables 1, 2, 3, and 4, when the content of the compound represented by the general formula (1) increases, the gel time is remarkably slowed and the curing reactivity is affected. In Tables 1 and 2, evaluation is performed with a dicyandiamide curing agent, and in Table 3, evaluation is performed with a phenol novolac resin curing agent. It can be seen that in any curing agent, when the content of the compound represented by the general formula (1) is increased, the gel time is remarkably delayed, so that it has an influence regardless of the type of the curing agent. This is because, for example, when a laminated board is produced, problems such as a decrease in adhesive force, occurrence of migration, swelling and cracking during solder immersion occur due to insufficient resin content. Moreover, in order to adjust the gel time as in Comparative Example 5 in Table 4, when the blending amount of the curing catalyst is increased, the curing heat generation amount retention rate is remarkably reduced, and the storage stability in the prepreg is deteriorated. There are problems such as long-term storage is not possible.
[0045]
[Industrial applicability]
By using the compound of the general formula (2) in which the content of the compound represented by the general formula (1) is 2.5% by weight or less, the adhesion, migration resistance, solder immersion resistance, It is possible to provide a phosphorus-containing epoxy resin and an electronic circuit board material excellent in storage stability in a prepreg.
Claims (7)
R1,R2は水素又は炭化水素基を示し、各々は異なっていても同一でも良く、直鎖状、分岐鎖状、環状であっても良い。また、R1とR2が結合し、環状構造となっていても良い。
Bはベンゼン、ビフェニル、ナフタレン、アントラセン、フェナントレン及びこれらの炭化水素置換体のいずれかを示す。
R1,R2は水素又は炭化水素基を示し、各々は異なっていても同一でも良く、直鎖状、分岐鎖状、環状であっても良い。また、R1とR2が結合し、環状構造となっていても良い。
Bはベンゼン、ビフェニル、ナフタレン、アントラセン、フェナントレン及びこれらの炭化水素置換体のいずれかを示す。 Formula (1) with a compound represented by the general formula (2) the content of a compound represented is 0.5 wt% 0.01, the phosphorus-containing epoxy resin obtained by reacting an epoxy resins.
R1 and R2 each represent hydrogen or a hydrocarbon group, and each may be different or the same, and may be linear, branched or cyclic. R1 and R2 may be bonded to form a ring structure.
B represents any of benzene, biphenyl, naphthalene, anthracene, phenanthrene, and their hydrocarbon substitutes.
R1 and R2 each represent hydrogen or a hydrocarbon group, and each may be different or the same, and may be linear, branched or cyclic. R1 and R2 may be bonded to form a ring structure.
B represents any of benzene, biphenyl, naphthalene, anthracene, phenanthrene, and their hydrocarbon substitutes.
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PCT/JP2008/070622 WO2009060987A1 (en) | 2007-11-09 | 2008-11-06 | Phosphorus-containing epoxy resin and phosphorus-containing epoxy resin composition, process for producing the same, and curable resin composition and cured object each containing or obtained from the resin and the resin composition |
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JP5686512B2 (en) * | 2009-11-05 | 2015-03-18 | 新日鉄住金化学株式会社 | Phosphorus-containing epoxy resin, resin composition, and flame-retardant cured product thereof |
TW201122014A (en) * | 2009-12-25 | 2011-07-01 | Nippon Steel Chemical Co | Epoxy resin, epoxy resin composition and cured article thereof |
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TW201219438A (en) * | 2010-08-26 | 2012-05-16 | Nippon Steel Chemical Co | providing an epoxy resin cured article capable of giving excellent high thermal decomposition stability, high heat tolerance, low thermal expansibility, flame retardancy, and low hygroscopicity |
CN102757547B (en) * | 2011-04-27 | 2016-07-06 | 新日铁住金化学株式会社 | The phosphorous epoxy resin with nitrogen |
JP5947504B2 (en) * | 2011-08-23 | 2016-07-06 | 三光株式会社 | Method for producing high-melting-point flame retardant crystal, method for producing flame retardant-containing epoxy resin composition, prepreg using the composition, and method for producing flame retardant laminate |
JP6067699B2 (en) * | 2012-06-15 | 2017-01-25 | 新日鉄住金化学株式会社 | Phosphorus-containing epoxy resin, composition containing epoxy resin as essential component, and cured product |
CN104356360B (en) * | 2014-11-06 | 2017-06-30 | 济南圣泉集团股份有限公司 | The preparation method of Tg Halogenless fire retarded epoxy resins high |
EP3620459B9 (en) | 2017-03-29 | 2023-10-04 | NIPPON STEEL Chemical & Material Co., Ltd. | Phosphorus-containing phenolic compound, phosphorus-containing epoxy resin, curable resin composition thereof, or epoxy resin composition and cured product thereof |
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JP4837175B2 (en) * | 2001-02-23 | 2011-12-14 | 新日鐵化学株式会社 | Phosphorus-containing epoxy resin composition |
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JPS61236787A (en) * | 1985-04-15 | 1986-10-22 | Sanko Kagaku Kk | Cyclic organic phosphorus compound and production thereof |
JPH05331179A (en) * | 1992-09-11 | 1993-12-14 | Sanko Kagaku Kk | Organocyclic phosphorus compound and its production |
WO2000044805A1 (en) * | 1999-01-28 | 2000-08-03 | Takeda Chemical Industries, Ltd. | Flame-retardant vinyl esters, resins and resin compositions containing the same, and cured products thereof |
JP2000309624A (en) * | 1999-02-23 | 2000-11-07 | Dainippon Ink & Chem Inc | Flame-retardant epoxy resin composition and method for producing flame-retardant epoxy resin |
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