JP5619235B2 - 電力変換装置 - Google Patents
電力変換装置 Download PDFInfo
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- JP5619235B2 JP5619235B2 JP2013160924A JP2013160924A JP5619235B2 JP 5619235 B2 JP5619235 B2 JP 5619235B2 JP 2013160924 A JP2013160924 A JP 2013160924A JP 2013160924 A JP2013160924 A JP 2013160924A JP 5619235 B2 JP5619235 B2 JP 5619235B2
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60L—PROPULSION OF ELECTRICALLY-PROPELLED VEHICLES; SUPPLYING ELECTRIC POWER FOR AUXILIARY EQUIPMENT OF ELECTRICALLY-PROPELLED VEHICLES; ELECTRODYNAMIC BRAKE SYSTEMS FOR VEHICLES IN GENERAL; MAGNETIC SUSPENSION OR LEVITATION FOR VEHICLES; MONITORING OPERATING VARIABLES OF ELECTRICALLY-PROPELLED VEHICLES; ELECTRIC SAFETY DEVICES FOR ELECTRICALLY-PROPELLED VEHICLES
- B60L2200/00—Type of vehicles
- B60L2200/26—Rail vehicles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
- H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Landscapes
- Inverter Devices (AREA)
Description
の電動車両であり、2つの車両駆動用システムを備えている。その1つは、内燃機関であるエンジン120を動力源としたエンジンシステムである。エンジンシステムは、主としてHEVの駆動源として用いられる。もう1つは、モータジェネレータ192,194を動力源とした車載電機システムである。車載電機システムは、主としてHEVの駆動源及びHEVの電力発生源として用いられる。モータジェネレータ192,194は例えば同期機あるいは誘導機であり、運転方法によりモータとしても発電機としても動作するので、ここではモータジェネレータと記すこととする。
板20や駆動回路基板22からの熱を受けて、筐体12に熱を伝導し、冷却水流路19の冷却水で放熱される。
0U/320Lはパワーモジュールの制御端子、328は上アーム用のIGBT、330は下アーム用のIGBT、156/166はダイオード、334は絶縁基板(図10参照)、334kは絶縁基板334上の回路配線パターン(図10参照)、334rは絶縁基板334下の回路配線パターン337(図10参照)、をそれぞれ表す。
(1)不図示の直流正極端子314から接続導体部371U、(2)接続導体部371Uから素子側接続導体部372Uを介して上アーム用IGBT328及び上アーム用ダイオード156の一方側電極(素子側接続導体部372Uと接続された側の電極)、(3)上アーム用IGBT328及び上アーム用ダイオード156の他方側電極からワイヤ336を介して接続導体部373U、(4)接続導体部373Uから結線端子370の接続部374U,374Dを介して接続導体部371Dを流れる。なお、前述のように上アームは、IGBT328とダイオード156を並列接続した回路部を2組並列に接続して構成される。よって、上記(2)の電流経路において、電流は、素子側接続導体部372Uにて2つに分岐され、該分岐された電流は2組の回路部へそれぞれ流れる。
(1)接続導体部371Dから素子側接続導体部372Dを介して下アーム用IGBT330及び上アーム用ダイオード166の一方側電極(素子側接続導体部372Dと接続された側の電極)、(2)下アーム用IGBT330及び下アーム用ダイオード166の他方側電極からワイヤ336を介して接続導体部373D、(3)接続導体部373Dから不図示の直流負極端子316を流れる。なお、上アームと同様に下アームは、IGBT330とダイオード166を並列接続した回路部を2組並列に接続して構成されので、上記(1)の電流経路において、電流は、素子側接続導体部371Dにて2つに分岐され、該分岐された電流は2組の回路部へそれぞれ流れる。
500 コンデンサモジュール
502 コンデンサモジュールケース
504A 負極側コンデンサ端子
506A 正極側コンデンサ端子
510 負極側接続端子部
511A 開口部
512 正極側接続端子部
522 充填材
530 放電抵抗
540A 絶縁カバー
549 ボルト孔
Claims (4)
- 直流電流を交流電流に変換するパワーモジュールと、
直流電圧を平滑化するコンデンサモジュールと、
前記パワーモジュールと前記コンデンサモジュールと電気的に接続する導体板と、
前記コンデンサモジュールを収納する金属製の筐体と、を備え、
前記コンデンサモジュールは、コンデンサ素子と、前記コンデンサ素子を封止する充填材と、前記コンデンサ素子と電気的に接続されかつ前記充填材から立ち上がる第1電極端子側立ち上げ部と、前記コンデンサ素子と電気的に接続されかつ前記充填材から立ち上がる第2電極端子側立ち上げ部と、前記第1電極端子側立ち上げ部の端部に接続される第1電極側コンデンサ端子と、前記第2電極端子側立ち上げ部の端部に接続される第2電極側コンデンサ端子と、前記第1電極端子側立ち上げ部と前記第2電極端子側立ち上げ部との間に配置される絶縁部材と、を有し、
前記第2電極側コンデンサ端子は、前記第1電極側コンデンサ端子から離れる方向に沿って形成され、
前記導体板は、前記第1電極側コンデンサ端子と接続される第1電極側導体板と、前記第2電極側コンデンサ端子と接続される第2電極側導体板と、により構成され、
前記第2電極側導体板は、前記第2電極側コンデンサ端子と接続する部分と、前記第1電極側コンデンサ端子と対向する部分と、を有し、
前記第1電極側導体板は、前記第1電極側コンデンサ端子と接続する部分を有し、
前記絶縁部材は、当該絶縁部材が前記第2電極側導体板と前記第1電極側コンデンサ端子との間に挟まれるように、前記第1電極側コンデンサ端子が配置された側に折り曲げて形成される電力変換装置。 - 請求項1に記載された電力変換装置であって、
前記絶縁部材は、絶縁性部材により形成された絶縁カバーであり、
前記絶縁カバーは、前記第1電極端子側立ち上げ部と前記第2電極端子側立ち上げ部との間に挟まれる絶縁カバー主面部と、当該絶縁カバー主面部の上部から立ち上がる上部立ち上げ部と、により構成され、
さらに前記絶縁カバーは、前記上部立ち上げ部が前記第1電極側コンデンサ端子の一部を覆うように配置される電力変換装置。 - 請求項2に記載された電力変換装置であって、
前記絶縁カバーは、前記絶縁カバー主面部の側部から立ち上がる側部立ち上げ部をさらに有し、
前記側部立ち上げ部は、前記第1電極側コンデンサ端子の一部を覆うように形成される電力変換装置。 - 請求項2に記載された電力変換装置であって、
前記絶縁カバーは、前記絶縁カバー主面部の側部から立ち上がる側部立ち上げ部をさらに有し、
前記側部立ち上げ部は、前記第1電極側コンデンサ端子の一部及び前記第2電極側コンデンサ端子の一部を覆うように形成される電力変換装置。
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JP2013160924A JP5619235B2 (ja) | 2013-08-02 | 2013-08-02 | 電力変換装置 |
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CN106464158B (zh) * | 2014-06-06 | 2018-11-30 | 日立汽车系统株式会社 | 电力转换设备 |
US10673349B2 (en) | 2016-12-22 | 2020-06-02 | Hitachi, Ltd. | Power conversion device with efficient cooling structure |
JP7363722B2 (ja) * | 2020-09-02 | 2023-10-18 | 株式会社デンソー | 電力変換装置 |
JP2023067151A (ja) * | 2021-10-29 | 2023-05-16 | マツダ株式会社 | インバータ構造 |
JP2023067149A (ja) | 2021-10-29 | 2023-05-16 | マツダ株式会社 | インバータ構造 |
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JP2001268942A (ja) * | 2000-03-16 | 2001-09-28 | Hitachi Ltd | 電力変換装置 |
JP3641807B2 (ja) * | 2002-09-05 | 2005-04-27 | 三菱電機株式会社 | 電力変換装置の変換部 |
JP4859443B2 (ja) * | 2005-11-17 | 2012-01-25 | 日立オートモティブシステムズ株式会社 | 電力変換装置 |
JP4850564B2 (ja) * | 2006-04-06 | 2012-01-11 | 日立オートモティブシステムズ株式会社 | 電力変換装置 |
JP4434181B2 (ja) * | 2006-07-21 | 2010-03-17 | 株式会社日立製作所 | 電力変換装置 |
JP4758923B2 (ja) * | 2007-02-08 | 2011-08-31 | 三菱電機株式会社 | 電力変換装置、コンバータ、インバータ及び端子台 |
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