JP5558452B2 - Bonding device - Google Patents

Description

The present invention relates to bonding equipment bonding a plate-shaped first member and the second member.

  In recent years, a glass substrate or another wafer, which is a reinforcing substrate, is attached to a semiconductor wafer (hereinafter simply referred to as a “wafer”) for the purpose of reinforcing the semiconductor wafer (hereinafter simply referred to as “wafer”) in response to a demand for a large-diameter semiconductor wafer. A laminating device has been developed.

  As such a laminating apparatus, a mounting table for mounting a thin plate-like first member, a holding plate for holding a thin plate-like second member arranged opposite to the upper portion of the mounting table, and the holding plate A bonding apparatus having a vacuum chamber ring provided on the outer periphery has been proposed. In this bonding apparatus, first, the holding plate and the vacuum chamber ring are lowered to the mounting table side, the vacuum chamber ring and the table are brought into contact with each other through the seal ring, and then the holding plate, the vacuum chamber ring and the mounting plate are mounted. A vacuum chamber is formed with the mounting table, the atmosphere gas in the vacuum chamber is sucked from the opening formed on the side surface of the vacuum chamber ring, the vacuum chamber is made into a vacuum atmosphere, and then the holding plate is mounted on the mounting table By further lowering to the side, the thin plate-like first member and the second member are bonded together (for example, see Patent Document 1).

  By the way, when laminating the thin plate-like first member and the second member using such a laminating apparatus, there is a problem in that air is trapped in the laminating surfaces of both members and voids are generated. This is a factor of reducing the quality or yield of the bonded body obtained by bonding the member and the second member. Therefore, in order to solve such a problem, the holding plate opposed to the mounting table is made of a flexible material, and the gas (air) existing between the first member and the second member is released. However, a laminating apparatus for laminating both has been developed (see, for example, Patent Document 2).

International Publication WO2004 / 026531 International Publication WO2010 / 055730

  However, although the bonding apparatus can suppress the generation of voids in the bonded body in which the first member and the second member are bonded, the compressive stress on the outer peripheral portion of the bonded body at the time of bonding is the compressive stress on the central portion. There is a tendency that the thickness of the outer peripheral portion of the bonded body becomes larger than the thickness of the central portion, and the compressive stress on the entire outer peripheral portion of the bonded body at the time of bonding tends to vary, There exists a problem that the thickness of the outer peripheral part of a bonding body becomes difficult to become uniform.

The problem of the present invention is that there is no variation in the thickness between the central portion and the outer peripheral portion of the bonded body obtained by bonding the first member and the second member, and the thickness of the outer peripheral portion is uniform over the entire circumference. and to provide a bonding equipment can be obtained a bonded body.

In order to solve the above-mentioned problem, the bonding apparatus according to claim 1 is a bonding apparatus for bonding a plate-like first member and a second member, and the first member is placed and held on the upper surface. Between the first holding part and the second holding part, the second holding part that is disposed opposite to the upper part of the first holding part and holds the second member, and the first holding part and the second holding part. An air intake mechanism that depressurizes the space formed in the housing, wherein the second holding portion is a rigid edge portion, and the holding portion is divided from the edge portion and the outer peripheral portion is supported by the edge portion. and a body, four said holder body, Ri Do an elastic body portion of the holding portion main body is bent at a predetermined pressure, the edge portion is provided at equal intervals along the circumferential direction characterized in that it is Tsuri支a support plate provided above the second holding portion by 8 amino fishing support member

A bonding apparatus according to a second aspect is the bonding apparatus according to the first aspect , wherein the number of the fishing support members is six.

The bonding apparatus according to claim 3 is the bonding apparatus according to claim 1 or 2, in order to maintain airtightness of a space formed between the first holding portion and the second holding portion. The airtight holding mechanism is an annular sealing material provided along the outer periphery of the lower surface of the second holding portion, and includes the first holding portion and the second holding portion. A seal member that maintains the airtightness of the space surrounded by the holding portion and the sealing material, and the first holding member that is provided on the outer side of the sealing material and contacts the lower surface of the second holding portion And a height adjusting mechanism for adjusting a distance between the first member held by the second holding member and the second member held by the second holding member.

The bonding apparatus according to claim 4 is the bonding apparatus according to claim 3 , wherein the height adjusting mechanism is a space surrounded by the first holding part, the second holding part, and the sealing material. The gap between the first member and the second member is adjusted while maintaining the airtightness of the first member.

The bonding apparatus according to claim 5 is the bonding apparatus according to any one of claims 1 to 4 , wherein the bonding apparatus is provided on an upper portion of the second holding portion and presses the second holding portion downward. The pressurizing mechanism is provided.

The bonding apparatus according to claim 6 is the bonding apparatus according to claim 5 , wherein the pressurizing mechanism expands and contracts in a vertical direction provided so as to cover an upper surface of the holding section main body of the second holding section. It has a flexible pressure vessel, and pressurizes the second holding part by introducing a fluid into the pressure vessel.

  According to the present invention, there is no variation in the thickness of the central portion and the outer peripheral portion of the bonded body obtained by bonding the first member and the second member, and the thickness of the outer peripheral portion is uniform over the entire circumference. A bonded body can be obtained.

It is a longitudinal cross-sectional view which shows schematic structure of the principal part of the bonding apparatus with which this invention is applied. It is a longitudinal cross-sectional view which shows schematic structure of the bonding apparatus which concerns on embodiment of this invention. It is a side view which shows schematic structure of the height adjustment mechanism in the bonding apparatus of FIG. It is a figure which shows the relationship between the eccentric roll and rotation shaft in the height adjustment mechanism of FIG. It is a top view which shows the edge part of the upper chuck | zipper in the bonding apparatus of FIG. It is process drawing of the bonding method which concerns on embodiment of this invention.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

  FIG. 1 is a longitudinal sectional view showing a schematic configuration of a main part of a bonding apparatus to which the present invention is applied.

  In FIG. 1, a laminating apparatus 100 includes a lower chuck 110 as a first holding unit for mounting and holding a thin wafer W1 as a first member on the upper surface, and a thin plate as a second member. And an upper chuck 111 as a second holding part for holding the wafer W2 by suction on its lower surface. The upper chuck 111 is disposed above the lower chuck 110 so as to face the lower chuck 110, and a pressure vessel as a pressurizing mechanism that presses the upper chuck 111 against the lower chuck 110 is disposed above the upper chuck 111. 120 is provided.

  In the bonding apparatus 100 having such a configuration, the wafer W1 and the wafer W2 are bonded together as follows.

  That is, first, the wafer W1 is placed and held on the upper surface of the lower chuck 110, and the wafer W2 is sucked and held on the upper chuck 111 by, for example, a suction mechanism (not shown).

  Next, the space S surrounded by the lower chuck 110, the upper chuck 111, and an annular sealing material (not shown) provided on the outer periphery of the lower surface of the upper chuck 111 is reduced to a predetermined pressure, and the upper chuck 111 and the upper chuck The central portion of the wafer W2 held by the chuck 111 is bent, and thereby the central portion of the wafer W2 is brought into contact with the central portion of the wafer W1. Thereafter, the pressure in the space S is reduced so as to be lower than the suction pressure of the upper chuck 111 holding the wafer W2, and the wafer W2 is detached from the upper chuck 111. 1, the pressure vessel 120 is extended downward in FIG. 1, thereby pressing the wafer W2 toward the wafer W1 placed on the lower chuck 110 so that the entire surface of the wafer W2 is covered with the wafer W1. Affix to the entire surface.

  The bonded body thus obtained is required to have a film thickness uniformity on the micron order, for example, 1 to 3 μm level in order to ensure the quality as the wafer W1.

  However, according to the investigation by the present inventor, when the wafer W1 and the wafer W2 are bonded using the bonding apparatus of FIG. 1, the pressing force acting on the outer peripheral portion of the bonded body is the pressing force acting on the central portion. There exists a problem that the thickness of the outer peripheral part in a bonding body becomes thinner than the thickness of a center part by this.

  Therefore, the present inventor has examined the relationship between the rigidity of the lower chuck and the upper chuck in the bonding apparatus and the compressive stress caused by the pressing force acting on the central portion and the outer peripheral portion of the bonded body. In order to suppress the generation of voids in the bonded body, the part is required to be flexible so that a part thereof is bent at a predetermined pressure, while compressive stress acting on the outer peripheral part and the central part of the bonded body is applied. In order to make it uniform, it has been found that the rigidity of the outer peripheral part needs to be larger than the rigidity of the central part, and the present invention has been completed.

  That is, the second holding portion in the bonding apparatus of the present invention has a rigid edge portion and a holding portion main body that is divided from the edge portion and has an outer peripheral portion supported by the edge portion. The part body is made of an elastic body in which a part of the holding part body is bent by a predetermined pressure.

  FIG. 2 is a longitudinal sectional view showing a schematic configuration of the bonding apparatus according to the embodiment of the present invention.

  In FIG. 2, a bonding apparatus 50 includes a lower chuck 10 as a first holding member that holds a wafer W1 that is a first member on the upper surface, and a second holding that holds a wafer W2 that is a second member on the lower surface. The upper chuck 11 is provided as a part, and the upper chuck 11 is disposed above the lower chuck 10 so as to face the lower chuck 10. The lower chuck 10 is fixed on a frame-like housing 12, and the housing 12 is mainly composed of a top plate 12a, a bottom plate 12b, and a side plate 12c disposed therebetween.

  Inside the lower chuck 10 is provided a suction tube 13 for sucking and holding the wafer W1. The suction tube 13 is connected to a vacuum pump (not shown), for example. The lower chuck 10 is made of a material having a strength that does not deform even when a load is applied to the wafer W1 and the wafer W2, for example, a ceramic such as silicon carbide ceramic or aluminum nitride ceramic. Note that aluminum can also be applied as a constituent material of the lower chuck 10. In this case, in order to reduce the deformation amount of the lower chuck 10, it is preferable that the thickness is, for example, 50 mm or more.

  The distance between the wafer W1 and the wafer W2 in the bonding space S is adjusted by adjusting the height of the upper chuck 11 by contacting and supporting the side surface of the lower chuck 10 against the lower surface of the upper chuck 11. A height adjusting mechanism 30 is provided. Here, the bonding space S refers to a space surrounded by the lower chuck 10, the upper chuck 11, and an O-ring 14 provided on the outer peripheral lower surface of the upper chuck 11 (see FIG. 6B described later). The height adjusting mechanism 30 is disposed so as to be positioned outside the O-ring 14 provided on the lower surface of the upper chuck 11 when contacting the lower surface of the upper chuck 11. For example, three height adjusting mechanisms 30 are arranged at equal intervals along the outer periphery of the lower chuck 10 having a circular upper plane, for example.

  FIG. 3 is a side view showing a schematic configuration of the height adjusting mechanism 30 in the bonding apparatus of FIG.

  In FIG. 3, the height adjusting mechanism 30 includes a support base 31, a rotary shaft 34 supported in parallel to the support base 31, and is fixed to the rotary shaft 34 and rotates as the rotary shaft 34 rotates. It is mainly composed of the eccentric roll 32. The center C1 of the eccentric roll 32 is eccentric by a predetermined dimension from the center C2 of the rotating shaft 34 as shown in FIG. Accordingly, the height adjustment mechanism 30 can adjust the height of the upper chuck 11 with respect to the lower chuck 10 by changing the height of the vertical apex of the eccentric roll 32 by the rotation of the rotary shaft 34. The amount of eccentricity between the center C1 of the eccentric roll 32 and the center C2 of the rotating shaft 34 is, for example, 0.1 to 2.0 mm. The height adjusting mechanism 30 adjusts the interval between the wafer W1 and the wafer W2 in a state where the airtightness of the bonding space S is maintained by an airtight holding mechanism described later.

  Returning to FIG. 2, the upper chuck 11 is mainly composed of a holding portion main body 11a for holding the wafer W2 and an edge portion 11b for supporting the outer peripheral portion of the holding portion main body 11a. The holding member body 11a is made of a flexible material, for example, duralumin. A part of the plate-like duralumin can be bent by applying a predetermined pressure, for example, the central part. As a result, as will be described later, voids can be prevented from being generated in the step of reducing the pressure in the bonding space S when the wafer W1 is bonded to the wafer W2. On the other hand, the edge part 11b which supports the outer peripheral part of the holding member main body 11a is comprised by highly rigid material, for example, stainless steel (SUS) material.

  By configuring the upper chuck 11 with the flexible holding portion main body 11a and the highly rigid edge portion 11b, the rigidity of the upper chuck 11, particularly the outer peripheral portion, is secured, and the flexibility in the central portion is maintained. Thus, for example, when preparing a bonded body that is a circular plate-like body, the compressive stress on the outer peripheral portion of the bonded body and the compressive stress on the central portion can be balanced. In addition, since the entire outer peripheral portion of the flexible holding portion main body 11a can be uniformly supported by the highly rigid edge portion 11b, the compressive stress along the circumferential direction of the outer peripheral portion with respect to the bonded body can be balanced. it can. Therefore, the action of balancing the compressive stress along the circumferential direction in the outer peripheral part of the bonded body cooperates with the action of balancing the compressive stress of the outer peripheral part and the compressive stress of the central part. The total compressive stress acting on the shaped bonded body is balanced, and the thickness uniformity in all directions of the bonded body can be ensured.

  FIG. 5 is a plan view showing the edge portion 11b of the upper chuck 11 in the bonding apparatus of FIG.

  In FIG. 5, the edge portion 11 b of the upper chuck 11 has an annular shape and has a step structure including a thick plate portion 11 b 1 that forms the outer peripheral portion and a thin plate portion 11 b 2 that forms the inner peripheral portion. A holding body 11a (see FIG. 2) that holds the wafer W2 is fitted into a step portion between the thick plate portion 11b1 and the thin plate portion 11b2, and is supported by the thin plate portion 11b2. The thickness in the circumferential direction of the thick plate portion 11b1 and the thin plate portion 11b2 is uniform.

  The edge portion 11b is supported by a support plate 16 (see FIG. 2) disposed on the upper portion thereof by, for example, six fishing support members 15 that are arranged uniformly along the circumferential direction of the thick plate portion 11b1. Yes. Therefore, the outer peripheral part of the holding part main body 11a is uniformly supported by the thin plate part 11b2 of the edge part 11b.

  Returning to FIG. 2, the fishing support member 15 is configured to be stretchable in the vertical direction by, for example, a spring member 15 a. An O-ring 14 as an annular seal member is disposed on the lower surface of the edge portion 11b along the annular circumferential direction of the edge portion 11b. The O-ring 14 maintains the airtightness of the bonding space S. The O-ring 14 has elasticity, and for example, a heat-resistant perfluoroelastomer is preferably used as the material. In addition, if the heat-resistant temperature requested | required of the O-ring 14 is about 150 degreeC, for example, fluororubber can also be used as a constituent material. The O-ring 14 and the height adjusting mechanism 30 constitute an airtight holding mechanism that holds the airtightness of the bonding space S.

  The holding part main body 11a of the upper chuck 11 is configured such that, when a predetermined pressure, for example, 0.7 atmospheric pressure (= 0.07 MPa) is applied to the whole holding part main body 11a, a part thereof, for example, the central part is bent. . In order to bend the central part of the holding part main body 11a, for example, the thickness of the holding part main body 11a is determined by analysis using a finite element method. For example, when the diameter of the wafer W2 is set to 300 mm and the diameter of the sealing material 14 provided along the outer periphery of the lower surface of the edge portion 11b is set to 306 mm (simulation), the thickness of the holding portion main body 11a is about 16 mm. For example, it has been found that the central portion of the bonding apparatus can be practically bent to such an extent that it can be applied to the holding body 11a.

  Further, when the central portion of the holding portion main body 11a bends, the central portion of the wafer W2 held by the upper chuck 11 needs to contact the wafer W1 disposed below the central portion. For this reason, the holding portion main body 11a is configured such that the central portion thereof is bent by a predetermined dimension that is equal to or larger than the interval between the wafer W2 and the wafer W1 in the bonding space S (see FIG. 6C described later). .

  Here, for example, the total thickness when the wafer W2 and the wafer W1 are bonded to each other is 1.2 mm, and the thickness of the thin plate portion 11b2 supporting the holding portion main body 11a in the edge portion 11b of the upper chuck 11 is set to 0. When the interval between the thin plate portion 11b2 of the edge portion 11b and the lower chuck 10 in the bonding space S is set to 0.5 mm, the interval between the wafer W2 and the wafer W1 is 0.2 mm. According to the above analysis result, if the thickness of the holding part main body 11a of the upper chuck 11 is 16 mm, the deflection amount of the central part is 0.2 mm, and the central part of the wafer W2 is in contact with the wafer W1. It was found that the central part which is a part of the holding part main body 11a bends. Therefore, the predetermined interval in the case where the interval between the wafer W1 and the wafer W2 when the wafer W1 and the wafer W2 are bonded to each other is set to a predetermined interval, as the holding portion main body 11a of the upper chuck 11 is bent. When the central portion of the wafer W2 held by the holding portion main body 11a is bent, the interval at which the central portion of the wafer W2 contacts the wafer W1, for example, an interval of 0.2 mm or less.

  Inside the holder main body 11a of the upper chuck 11, a suction tube 17 for sucking and holding the wafer W2 is provided. The suction pipe 17 is connected to a decompression device such as a vacuum pump (not shown). In addition, an intake pipe 18 for decompressing the bonding space S is provided inside the holding portion main body 11a. One end of the intake pipe 18 opens into the bonding space S at a place where the wafer W2 is not held on the lower surface of the holding portion main body 11a. The other end of the intake pipe 18 is connected to a decompression device such as a vacuum pump (not shown). The intake pipe 18 and the pressure reducing device connected to the intake pipe 18 constitute an intake mechanism.

  A pressurizing mechanism 20 that presses the upper chuck 11 downward in the vertical direction is provided between the upper portion of the upper chuck 11, that is, between the upper surface of the upper chuck 11 and the lower surface of the support plate 16 that supports the upper chuck 11. The pressurizing mechanism 20 is mainly composed of an expandable / contractible pressure vessel 21 and a fluid supply pipe 22 for supplying, for example, compressed air into the pressure vessel 21. The pressure vessel 21 is configured by, for example, a stainless steel bellows, and the area of the lower surface thereof is configured to be substantially equal to the upper area of the holding body 11a of the upper chuck 11, for example. Accordingly, when a fluid, for example, compressed intake air is supplied from the fluid supply pipe 22 to the pressure vessel 21, the pressure vessel 21 extends downward and presses the upper plane of the holding portion main body 11a evenly downward.

  An upper chuck 11, a pressure mechanism 20, a support plate 16 that supports them, and an upper end that is one end of the support plate 16, and a plurality of support members 40 a extending through the top plate 12 a of the housing 12; The upper chuck structure 40 is formed by the bottom support plate 40b fixed to the lower end which is the other end of the support member 40a. For example, an air cylinder 25 is arranged as a moving mechanism between the bottom support plate 40b of the upper chuck structure 40 and the bottom plate 12b of the housing 12. By operating the air cylinder 25, the upper chuck structure is operated. 40 moves up and down together with the upper chuck 11 and the pressurizing mechanism 20 to change the relative position of the upper chuck 11 with respect to the lower chuck 10. Accordingly, the air cylinder 25 forms a bonding space S by lowering the upper chuck 11 and bringing it close to the lower chuck 10 when bonding the wafer W1 and the wafer W2 (see FIG. 6B described later).

  Instead of moving the upper chuck structure 40, it is also possible to provide a moving mechanism for fixing the upper chuck 11 and changing the relative position of the lower chuck 10 with respect to the upper chuck 11.

  In the bonding apparatus 50 having such a configuration, the wafer W1 and the wafer W2 are bonded together as follows.

  FIG. 6 is a process diagram showing the bonding method according to the embodiment of the present invention.

  6, first, while the lower chuck 10 and the upper chuck 11 are separated from each other, the wafer W1 is placed and held on the upper surface of the lower chuck 10, and the wafer W2 is held on the lower surface of the holding body 11a of the upper chuck 11. The wafer W2 and the wafer W1 are arranged to face each other by suction and holding (FIG. 6A). The adsorption pressure of the wafer W2 on the holding unit main body 11a of the upper chuck 11 is, for example, 0.1 atm (= 0.01 Mpa). The wafer W1 and the wafer W2 have, for example, circular thin plate shapes having substantially the same diameter, and an adhesive (not shown) is applied in advance to the upper surface of the wafer W1 or the lower surface of the wafer W2.

  In the bonding apparatus that holds the wafer W1 and the wafer W2 so as to face each other, the eccentric roll 32 of the height adjusting mechanism 30 is brought into contact with the lower surface of the edge portion 11b of the upper chuck 11 by the air cylinder 25 (see FIG. 2). The upper chuck 11 is lowered. At this time, the height of the contact point between the eccentric roll 32 and the lower surface of the edge portion 11b is set so that the distance between the wafer W1 and the wafer W2 is a predetermined distance, for example, 0.2 mm as described above (FIG. 6). (B)). At this time, a sealed bonding space S is formed between the lower chuck 10 and the upper chuck 11, and the vertical position of the upper chuck 11 is fixed in this state.

  Next, the atmospheric gas in the bonding space S is sucked and decompressed by the intake pipe 18 (see FIG. 2), and the pressure in the bonding space S is adjusted to, for example, 0.3 atm (= 0.03 MPa). To do. When the pressure in the bonding space S becomes 0.3 atm, the upper chuck 11 has a pressure difference between the pressure (atmospheric pressure) applied to the upper surface of the upper chuck 11 and the pressure in the bonding space S, for example, (1 −0.3) = 0.7 atm is applied, the central portion of the holding portion main body 11a is bent, and the central portion of the wafer W2 held by the holding portion main body 11a is also bent in accordance with the bending of the holding member main body 11a ( FIG. 6 (C)).

  At this time, the temperature of the wafer W1, the wafer W2, and the adhesive is, for example, a softening temperature of the adhesive by a heating means (not shown) provided in the lower chuck 10 or the upper chuck 11, such as an electric heater, for example, 200 to Heat to 250 ° C. At this time, since the suction pressure (0.1 atm) for attracting the wafer W2 by the holding unit main body 11a is smaller than the pressure (0.3 atm) in the bonding space S, the wafer W2 is held by the holding unit main body 11a. The state held in

  Next, when the atmosphere gas in the bonding space S is further sucked and the pressure in the bonding space S is adjusted to, for example, 0.1 (= 0.1) atmospheric pressure, the holding body 11a of the upper chuck 11 is moved to the wafer W2. As a result, the wafer W2 falls downward and the entire surface of the wafer W2 comes into contact with the entire surface of the wafer W1 (FIG. 6D). At this time, the wafer W2 sequentially comes into contact with the wafer W1 from the central part in contact with the wafer W1 toward the radially outer side. Therefore, air is not confined on the bonding surface between the wafer W2 and the wafer W1, and no void is generated.

  Thereafter, the eccentric roll 32 of the height adjustment mechanism 30 is rotated to eliminate the pressing force that pushes the upper chuck 11 upward, and the upper chuck 11 is brought into contact with the lower chuck 11 via the wafer W1 and the wafer W2 ( FIG. 6 (E)). In this state, for example, compressed air is supplied from the fluid supply pipe 22 into the pressure vessel 21 of the pressurizing mechanism 20 to extend the pressure vessel 21 downward (see FIG. 2), thereby the wafer W2 and the wafer W1. Are bonded together to obtain a bonded body 35 (FIG. 6F). At this time, the pressing force at the outer peripheral portion of the bonded body 35 tends to be larger than the pressing force at the central portion, but in the present embodiment, the outer peripheral portion of the upper chuck 11 is configured by a highly rigid edge portion 11b. Thus, the pressing force acting on the outer peripheral portion of the bonded body 35 can be offset by the highly rigid edge portion 11b. Accordingly, it is possible to balance the thicknesses of the central portion and the outer peripheral portion of the bonded body 35.

  According to the present embodiment, the upper chuck 11 includes the holding unit main body 11a that holds the wafer W2 and the edge portion 11b that is separated from the holding unit main body 11a and supports the outer peripheral portion of the holding unit main body 11a. As a result, the rigidity of the upper chuck 11, particularly the rigidity of the outer peripheral portion of the upper chuck 11, is prevented to prevent variation in compressive stress between the central portion and the outer peripheral portion of the upper chuck 11 and the thickness of the central portion of the bonded body 35. In addition, the thickness of the outer peripheral portion can be made uniform, and the flexibility of the holding portion main body 11b can be ensured. Therefore, at the beginning of the bonding, only the central portion of the wafer W2 can be bonded to the wafer W1, and then bonded sequentially toward the outer peripheral portion, which occurs on the bonding surface of the wafer W1 and the wafer W2. Generation of easy voids can be prevented.

  That is, according to the present embodiment, in the upper chuck 11, it is possible to achieve both the flexibility for avoiding the generation of voids and the rigidity for suppressing the thickness variation in the bonded body 35. The bonded body 35 having a uniform thickness can be obtained while preventing the generation of voids.

  Further, according to the present embodiment, the upper chuck 11 is constituted by the holding portion main body 11a and the edge portion 11b that supports the outer peripheral portion of the holding portion main body 11a, whereby the holding portion main body that holds the wafer W2. The size of 11a can be made relatively small. As a result, the rigidity of the holder main body 11a can be improved, and the amount of deformation of the holder main body 11a and the upper chuck 11 as a whole can be reduced.

  Further, according to the present embodiment, the number of the fishing support members 15 that are evenly arranged along the circumferential direction of the edge portion 11b of the upper chuck 11 is set to six, so that the upper chuck 11 is held by the holding portion. Due to the synergistic effect of the configuration of the main body 11a and the edge portion 11b, there is no variation in compressive stress along the circumferential direction acting on the outer peripheral portion of the bonded body 35, and in the circumferential direction of the outer peripheral portion of the bonded body 35. The thickness along the line can be made almost uniform. In addition, the fishing support member 16 can also be four or eight other than six.

  In the present embodiment, the rigidity of the outer peripheral portion of the upper check 11 is greatly influenced by the thickness of the edge portion 11b, particularly, the thin plate portion 11b2 of the edge portion 11b. Therefore, in order to ensure the thickness of the thin plate portion 11b2, the outer peripheral portion of the lower chuck 10 can be partially cut away, and the thickness of the thin plate portion 11b2 can be increased by a thickness corresponding to the cutout portion.

  In the present embodiment, a heating device is provided in the lower chuck 10, the upper chuck 11 or a member in the vicinity thereof in order to heat the wafer W1, the wafer W2, and the adhesive for adhering them at the time of bonding. A known electric heater or the like is suitably used as the apparatus. The heating temperature is a temperature necessary for softening the adhesive, and is, for example, 150 to 250 ° C, preferably 200 to 250 ° C. Further, a cooling device can be provided to cool the bonded body 35 and the like as necessary. As the cooling device, for example, an air cooling device for bringing an air flow into contact with the bonded body 35, a cooling device for placing the bonded body 35 on a cooling plate, or the like is preferably used. In this case, if the bonded body 35 is rapidly cooled from one side, warping may occur. Therefore, it is preferable to cool from one side after cooling from both sides or lowering the temperature to some extent.

  Moreover, in this Embodiment, it is preferable to comprise so that the spring force of the spring member 15a of the fishing support member 15 which supports the edge part 11b of the upper chuck | zipper 11 can be adjusted, and in this, in the outer peripheral part of the bonding body 35 The thickness can also be adjusted. In this case, an air cylinder device can be applied in place of the spring member, whereby the fishing support stress can be adjusted during the bonding operation, and the operability is improved.

  Although the case where the wafer W2 is bonded to the wafer W1 has been described in the present embodiment, the present invention is not limited to this. The glass substrate G can also be bonded to the wafer W1, and the bonding member for obtaining the bonded body 35 is not particularly limited.

  As mentioned above, although this invention was demonstrated in detail using embodiment, this invention is not limited to these embodiment.

DESCRIPTION OF SYMBOLS 10 Lower chuck 11 Upper chuck 11a Holding part main body 11b Edge part 11b1 Thick board part 11b2 Thin board part 12 Body 14 O-ring 15 Fishing support member 16 Support plate 18 Intake mechanism 20 Pressurization mechanism 25 Air cylinder 26 Fixing mechanism 30 Height adjustment mechanism 40 Upper chuck structure 50, 100 Bonding apparatus W Wafer

Claims (6)

A laminating apparatus for laminating a plate-like first member and a second member,
A first holding part for placing and holding the first member on the upper surface;
A second holding part that is arranged opposite to the upper part of the first holding part and holds the second member;
An intake mechanism that depressurizes a space formed between the first holding part and the second holding part,
The second holding part has a rigid edge part, and a holding part body that is divided from the edge part and has an outer peripheral part supported by the edge part, and the holding part body has a predetermined pressure. Ri Do an elastic body portion of the holding portion main body bends,
The edge portion is supported by a support plate provided above the second holding portion by four to eight fishing support members provided at equal intervals along the circumferential direction. Bonding device to do. The fishing support member is bonding apparatus according to claim 1, characterized in that six. The airtight holding mechanism for holding the airtightness of the space formed between the first holding part and the second holding part, the airtight holding mechanism,
An annular sealing material provided along the outer periphery of the lower surface of the second holding part, wherein the airtightness of the space surrounded by the first holding part, the second holding part and the sealing material Sealing material to hold,
A first member that is provided outside the seal material and that is in contact with the lower surface of the second holding portion and is held by the first holding member; and a second member that is held by the second holding member. bonding apparatus according to claim 1 or 2, wherein the having a height adjustment mechanism for adjusting the spacing between. The height adjusting mechanism is provided between the first member and the second member while maintaining airtightness in a space surrounded by the first holding unit, the second holding unit, and the sealing material. The bonding apparatus according to claim 3, wherein an interval between the two is adjusted. The bonding according to any one of claims 1 to 4 , further comprising a pressurizing mechanism provided on an upper portion of the second holding portion and pressing the second holding portion downward. apparatus. The pressurizing mechanism includes a pressure vessel that is vertically extendable so as to cover an upper surface of the holding portion main body of the second holding portion, and the fluid is introduced into the pressure vessel by introducing a fluid into the pressure vessel. The bonding apparatus according to claim 5, wherein the second holding unit is pressurized.

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