JP5554140B2 - Power conversion circuit - Google Patents

Description

  The present invention relates to a power conversion device that converts alternating current to direct current or direct current to alternating current, and more particularly to a power conversion circuit of a power conversion device called a so-called three-level converter.

  Recently, development of wide band gap semiconductors typified by silicon carbide (SiC) has progressed, and application to power converters has been actively studied due to characteristics such as low loss, high breakdown voltage, and high temperature operation. On the other hand, a three-level converter circuit that can obtain a three-level output and reduce harmonics contained in the output voltage is conventionally known as compared with a two-level converter that can obtain a two-level output. For example, Patent Document 1 discloses a silicon carbide used as the diode of the three-level converter circuit. In Patent Document 1, an element made of silicon carbide is applied to all diodes constituting a power conversion circuit having a three-level output.

DE19638620 (Fig. 3)

  The conventional power conversion circuit is configured as described above, and since all the diodes are composed of silicon carbide, loss due to switching can be reduced. However, in terms of circuit operation, all of the silicon carbide diodes are not necessarily included. There is a problem that the cost is increased as compared with a power conversion circuit using a silicon element that is widely used for a diode of a power conversion circuit at present. The present invention has been made to solve such a problem, and examines circuit operation, particularly reverse recovery operation in detail, while reducing switching loss (hereinafter referred to as recovery loss) associated with reverse recovery operation. An object of the present invention is to provide a power conversion circuit capable of suppressing an increase in cost.

  The power conversion circuit according to the present invention includes a high potential terminal that provides a high direct current potential, a low potential terminal that provides a low direct current potential, and an intermediate potential terminal that provides an intermediate potential that is an intermediate potential between the high potential and the low potential. Are provided between the three DC terminals and one AC terminal, and have a plurality of switch elements and a plurality of diodes. In a power conversion circuit that converts power between three terminals and one AC terminal, in the operation of converting power among a plurality of diodes, a reverse voltage is applied after a forward voltage is applied and a forward current flows. By doing so, only the diode that performs reverse recovery operation is a wide band gap semiconductor diode, and at least one of the diodes that does not perform reverse recovery operation is a diode other than the wide band gap semiconductor. It was.

  Since a wide bandgap semiconductor is applied only to a diode with a reverse recovery operation, an increase in cost can be suppressed while reducing recovery loss.

It is a circuit diagram which shows the power converter circuit by Embodiment 1 of this invention. It is a circuit diagram which shows the power converter device to which the power converter circuit by Embodiment 1 of this invention is applied. It is the schematic of the voltage of the power converter circuit by Embodiment 1 of this invention, and a current waveform. It is a figure which shows operation | movement of the power converter circuit by Embodiment 1 of this invention. It is a circuit diagram which shows the power converter circuit by Embodiment 2 of this invention. It is a circuit diagram which shows the power converter device to which the power converter circuit by Embodiment 2 of this invention is applied. It is the schematic of the voltage of the power converter circuit by Embodiment 2 of this invention, and a current waveform. It is a figure which shows operation | movement of the power converter circuit by Embodiment 2 of this invention. It is a circuit diagram which shows the power converter circuit by Embodiment 3 of this invention. It is a circuit diagram which shows the power converter circuit by Embodiment 4 of this invention. It is a circuit diagram which shows the power converter device to which the power converter circuit by Embodiment 5 of this invention is applied. It is a circuit diagram which shows the power converter circuit by Embodiment 5 of this invention. It is a figure which shows operation | movement of the power converter circuit by Embodiment 5 of this invention. It is a circuit diagram which shows the power converter circuit by Embodiment 6 of this invention. It is a circuit diagram which shows the power converter device to which the power converter circuit by Embodiment 6 of this invention is applied. It is a figure which shows operation | movement of the power converter circuit by Embodiment 6 of this invention. It is a circuit diagram which shows the power converter circuit by Embodiment 7 of this invention. It is a figure which shows operation | movement of the power converter circuit by Embodiment 8 of this invention.

Embodiment 1 FIG.
FIG. 1 is a circuit diagram showing a power conversion circuit according to Embodiment 1 of the present invention. That is, it is a circuit configuration for one phase of the power conversion device having three-level output. In FIG. 1, 1-4 are switching elements, 6, 7, 9, 10, 105, 108 are diodes, and 11 and 12 are capacitors as voltage sources. Here, the switching element 1 and the diode 105 are connected in parallel so as to be reverse in conduction polarity, so-called anti-parallel. Other switching elements and diodes are similarly connected in antiparallel. P is, for example, a high potential terminal for applying a positive potential, N is a potential lower than the potential of the high potential terminal, for example, a low potential terminal for applying a negative potential, and M is an intermediate between the potential of the high potential terminal and the potential of the low potential terminal. An intermediate potential terminal for providing a potential of AC, and AC is an AC single terminal at which an AC potential appears. In the case of a single-phase output, two circuits are used, and in the case of a three-phase output, three circuits are used to constitute a power conversion device. In the first embodiment, the diode 105 and the diode 108 are wide bandgap semiconductor diodes, and the other diodes are made of silicon or the like but have a relatively slow reverse recovery but are low-cost diodes. In FIG. 1, wide band gap semiconductor diodes are indicated by large diode symbols, and the same applies to the following drawings.

  As a power conversion apparatus to which the first embodiment is applied, for example, a typical circuit diagram of a high power factor converter with a three-phase input is shown in FIG. 2, and its operation waveform is shown in FIG. In FIG. 2, reference numerals 201 to 203 denote a circuit configuration for one phase of the power conversion device having three-level outputs, that is, the circuit configuration shown in FIG. 1, and three circuits for one phase are provided to support three-phase power reception. Connected in parallel. Each AC one-terminal AC is connected to a three-phase power supply 205 via a three-phase reactor 204. The phase current is increased in power factor by well-known control for the current of the reactor 204.

Here, consider the case where the power flow (power flow) is directed from the grid to the power converter as shown in FIG. That is, a mode in which the potential of the high potential terminal P is output with reference to the potential of the intermediate potential terminal M is a positive voltage output mode, and a mode in which the potential of the low potential terminal N is output with reference to the potential of the intermediate potential terminal M is a negative voltage. When the output mode is defined, in the positive voltage output mode, the current flowing through the AC one-terminal AC flows into the power converter, and in the negative voltage output mode, the current flowing through the AC one-terminal AC flows out from the power converter. .

  This operation will be described with reference to FIG. Since the high power factor converter operates to bring the power factor as close as possible to 1, the voltage Vr for one phase of the three-phase system power supply 205 and the current Ir flowing therethrough are approximately in frequency and phase as shown in FIG. Match. Also, the output voltage waveform Vrc of the power conversion circuit 201 for one phase at this time is as shown in FIG. 3B, and the phase of the system power supply voltage Vr and the converter voltage Vrc are approximately the same. Accordingly, during the period (A) shown in FIG. 3B, a positive current (in the direction of the arrow Ir in FIG. 2) flows through the phase current Ir. On the other hand, in the period of (B) shown in FIG. 3B, a negative current flows in the phase current Ir (opposite the direction of the arrow of Ir in FIG. 2).

  The operation for one phase of the converter in the period (A) and the period (B) in FIG. 3B will be described below. First, the operation in the period (A) of FIG. 3B will be described with reference to FIG. The current of the AC one-terminal AC during this period is the direction that flows into the power conversion circuit as indicated by the arrow. In the operation during this period, the switching element 2 surrounded by ◯ is on. The switching element 4 is off. At this time, the switching element 1 and the switching element 3 are turned on and off in a complementary manner, whereby the potential of the high potential terminal P and the potential of the intermediate potential terminal M appear alternately at the alternating current terminal AC, and (A) in FIG. The voltage waveform of Vrc in the period of) can be obtained. Here, since the switching element 1 is turned off when the switching element 3 is turned on, a reverse voltage is applied to the diode 105 and the diode 105 performs a reverse recovery operation. When the switching element 1 is turned on, there is no diode that performs the reverse recovery operation as described above. Since the diode 105 performs a reverse recovery operation, a power conversion circuit with low recovery loss can be obtained by using a diode of a wide band gap semiconductor such as silicon carbide that is fast in reverse recovery.

  Next, the operation during the period (B) in FIG. 3B will be described with reference to FIG. The current of the AC one-terminal AC during this period is a direction that flows out of the power conversion circuit as indicated by an arrow. In the operation during this period, the switching element 3 surrounded by ◯ is on. The switching element 1 is off. At this time, the switching element 2 and the switching element 4 are turned on and off in a complementary manner, whereby the potential of the intermediate potential terminal M and the potential of the low potential terminal N appear alternately at the AC one terminal AC, and (B) in FIG. The voltage waveform of Vrc in the period of) can be obtained. Here, since the switching element 4 is turned off when the switching element 2 is turned on, a reverse voltage is applied to the diode 108 and the diode 108 performs a reverse recovery operation. When the switching element 4 is turned on, there is no diode that performs the reverse recovery operation as described above. Since the diode 108 performs a reverse recovery operation, a power conversion circuit with low recovery loss can be obtained by using a diode of a wide band gap semiconductor such as silicon carbide that is fast in reverse recovery.

  As described above, in the power conversion circuit of the power conversion device in which the power flow goes from the system to the power conversion device, diodes of wide band gap semiconductors are used for the diode 105 and the diode 108, and other diodes are inexpensive diodes such as silicon. By using this, a low-cost and low-loss power conversion circuit can be obtained.

Embodiment 2. FIG.
FIG. 5 is a circuit diagram of a power conversion circuit according to the second embodiment of the present invention. That is, it is a circuit configuration for one phase of the power conversion device having three-level output. In FIG. 5, as in FIG. 1, 1-4 are switching elements, 5-8, 109, 110 are diodes, and 11 and 12 are capacitors as voltage sources. In the case of a single-phase output, two circuits are used, and in the case of a three-phase output, three circuits are used to constitute a power conversion device. In the second embodiment, the diode 109 and the diode 110 are wide bandgap semiconductor diodes, and the other diodes are made of silicon or the like but have a relatively slow reverse recovery but are low-cost diodes.

  As a power conversion device to which the second embodiment is applied, for example, a typical circuit diagram of a high power factor converter with a three-phase input is shown in FIG. 6, and its operation waveform is shown in FIG. In FIG. 6, reference numerals 211 to 213 denote a circuit configuration for one phase of the power conversion device having three-level outputs, that is, the circuit configuration shown in FIG. 5, and three circuits for one phase are provided to support three-phase power reception. Connected in parallel. Each AC terminal is connected to a three-phase power source 205 via a three-phase reactor 204. The phase current is increased in power factor by well-known control for the current of the reactor 204.

  Here, consider the case where the power flow is directed from the power converter to the grid as shown in FIG. That is, a mode in which the potential of the high potential terminal P is output with reference to the potential of the intermediate potential terminal M is a positive voltage output mode, and a mode in which the potential of the low potential terminal N is output with reference to the potential of the intermediate potential terminal M is a negative voltage. When the output mode is defined, in the positive voltage output mode, the current flowing in the AC one-terminal AC is in a direction flowing out from the power converter, and in the negative voltage output mode, the current flowing in the AC one-terminal AC is in a direction flowing into the power converter. .

  This operation will be described with reference to FIG. Since the high power factor converter operates to make the power factor as close as possible to 1, the voltage Vr for one phase of the three-phase system power source 205 and the current Ir flowing therethrough have the same frequency as shown in FIG. The phase is generally reversed. Further, the output voltage waveform Vrc of the power conversion circuit 211 for one phase at this time is as shown in FIG. 7B, and Vr and Vrc are substantially in phase. Therefore, in the period (A) of FIG. 7B, a negative current (in the direction opposite to the arrow of Ir in FIG. 6) flows in the phase current Ir. On the other hand, in the period (B) of FIG. 7B, a positive current (in the direction of the arrow of Ir in FIG. 6) flows through the phase current Ir.

  The operation for one phase of the converter in the period (A) and the period (B) in FIG. 7B will be described below. First, the operation in the period (A) in FIG. 7B will be described with reference to FIG. The current of the AC one-terminal AC during this period is a direction that flows out of the power conversion circuit as indicated by an arrow. In the operation during this period, the switching element 2 surrounded by ◯ is on. The switching element 4 is off. At this time, the switching element 1 and the switching element 3 are turned on and off in a complementary manner, whereby the potential of the high potential terminal P and the potential of the intermediate potential terminal M appear alternately at the AC one terminal AC, and (A in FIG. The voltage waveform of Vrc in the period of) can be obtained. Here, since the switching element 3 is turned off when the switching element 1 is turned on, a reverse voltage is applied to the diode 109 and the diode 109 performs a reverse recovery operation. When the switching element 3 is turned on, there is no diode that performs the reverse recovery operation as described above. Since the diode 109 performs reverse recovery operation, a power conversion circuit with low recovery loss can be obtained by using a diode of a wide band gap semiconductor such as silicon carbide that is fast in reverse recovery.

Next, the operation in the period (B) in FIG. 7B will be described with reference to FIG. The current of the AC one-terminal AC during this period is the direction that flows into the power conversion circuit as indicated by the arrow. In the operation during this period, the switching element 3 surrounded by ◯ is on. The switching element 1 is off. At this time, the switching element 2 and the switching element 4 are turned on and off in a complementary manner, whereby the potential of the intermediate potential terminal M and the potential of the low potential terminal N appear alternately in the AC one terminal AC, and (B) in FIG. The voltage waveform of Vrc in the period of) can be obtained. Here, since the switching element 2 is turned off when the switching element 4 is turned on, a reverse voltage is applied to the diode 110 and the diode 110 performs a reverse recovery operation. When the switching element 2 is turned on, there is no diode that performs the reverse recovery operation as described above. Since the diode 110 performs reverse recovery operation, a power conversion circuit with low recovery loss can be obtained by using a diode of a wide band gap semiconductor such as silicon carbide that is fast in reverse recovery.

  As described above, in the power conversion circuit of the power conversion device in which the power flow goes from the system to the power conversion device, diodes of wide band gap semiconductors are used for the diode 109 and the diode 110, and other diodes are inexpensive diodes such as silicon. By using this, a low-cost and low-loss power conversion circuit can be obtained.

Embodiment 3 FIG.
FIG. 9 is a circuit diagram of a power conversion circuit according to the third embodiment of the present invention. That is, it is a circuit configuration for one phase of the power conversion device having three-level output. In FIG. 9, diodes 105, 108, 109, and 110 indicated by large diode symbols are diodes made of a wide band gap material such as silicon carbide. In the bidirectional power conversion device including both operations described in the first and second embodiments, the diodes that perform the reverse recovery operation are all diodes other than the diodes 6 and 7. Therefore, if a diode made of a wide band gap material such as silicon carbide is applied to the diodes 105, 108, 109, and 110 that perform the reverse recovery operation, the power flow can be changed from the system to the power converter and from the power converter to the system. In the power converter circuit of the bidirectional power converter to be performed, a power converter circuit with little loss can be obtained. The diode is preferably a Schottky barrier diode in which reverse recovery charge can be ignored. As a result, the recovery loss can be reduced, and the efficiency of the power conversion circuit can be improved.

  By applying a diode made of a low-cost material such as silicon to the diodes 6 and 7 not accompanied by the reverse recovery operation, there is an effect that an increase in the cost of the power conversion circuit can be avoided as much as possible.

Embodiment 4 FIG.
FIG. 10 is a circuit diagram of a power conversion circuit according to Embodiment 4 of the present invention. Reference numerals 105 to 108 denote diodes made of a wide band gap material such as silicon carbide. Here, the switching element 1 and the diode 105, the switching element 2 and the diode 106, the switching element 3 and the diode 107, and the switching element 4 and the diode 108 form a pair, and one power module is configured for each pair.

  Here, as in the first embodiment, the power conversion circuit is applied as a high power factor converter. The high power factor converter is a control for setting the power factor of the received power from the system to 1, and is a control in which the phase of the output voltage and the output current of the converter substantially coincide. In this Embodiment 4, the case where a power flow goes to a power converter device from a system | strain is considered. That is, a mode in which the potential of the high potential terminal P is output with reference to the potential of the intermediate potential terminal M is a positive voltage output mode, and a mode in which the potential of the low potential terminal N is output with reference to the potential of the intermediate potential terminal M is a negative voltage. When the output mode is defined, in the positive voltage output mode, the current flowing through the AC one-terminal AC flows into the power conversion circuit, and in the negative voltage output mode, the current flowing through the AC one-terminal AC flows out from the power conversion circuit. .

  In this case, the operation is the same as that described in FIG. 4 of the first embodiment. That is, only the diode 105 and the diode 108 are reversely recovered. In this embodiment, since a pair of switching elements and diodes made of a wide band gap material are arranged, diodes 106 and 107 that do not reversely recover are also made of wide band gap materials. Since the circuit can be configured and different types of modules are not arranged, it is possible to prevent a mistake in the connection of the main circuit.

  By applying a diode made of a low-cost material such as silicon to the other diodes 9 and 10 that do not involve reverse recovery operation, there is an effect that an increase in the cost of the power conversion circuit can be avoided as much as possible.

Embodiment 5 FIG.
FIG. 11 is a circuit diagram of a power conversion circuit according to the fifth embodiment of the present invention. In FIG. 11, reference numerals 41 to 44 denote switching elements, and 47, 48, 145, and 146 denote diodes. Among the diodes 47, 48, 145, and 146, in the fifth embodiment, a silicon carbide diode is applied to the diodes 145 and 146, and a conventional silicon diode is applied to the other diodes 47 and 48, for example. To do.

  As a power converter to which the fifth embodiment is applied, for example, a typical circuit diagram of a three-phase input high power factor converter is shown in FIG. In FIG. 12, reference numerals 301 to 303 denote a circuit configuration for one phase of the power conversion device having three-level outputs, that is, the circuit configuration shown in FIG. 11, and three circuits for one phase in order to support three-phase power reception. Connected in parallel. Each AC one-terminal AC is connected to a three-phase power supply 205 via a three-phase reactor 204. The phase current is increased in power factor by well-known control for the current of the reactor 204.

  Here, consider the case where the power flow is directed from the grid to the power converter as shown in FIG. Since the operation waveforms are the same as those in FIG. 3, the operation will be described with reference to FIG. Since the high power factor converter operates to make the power factor as close to 1 as possible, the voltage Vr for one phase of the three-phase system power supply 205 and the current Ir flowing therethrough have substantially the same frequency and phase as in FIG. Match. Also, the output voltage waveform Vrc of the power conversion circuit 301 for one phase at this time is as shown in FIG. 3B, and the phase of the system power supply voltage Vr and the converter voltage Vrc are substantially the same. Therefore, during the period (A) shown in FIG. 3B, a positive current (in the direction of the arrow Ir in FIG. 12) flows in the phase current Ir. On the other hand, in the period (B) shown in FIG. 3B, a negative current (in the direction opposite to the direction of the arrow Ir in FIG. 12) flows in the phase current Ir.

  The operation for one phase of the converter in the period (A) and the period (B) in FIG. 3B will be described below. First, the operation in the period (A) of FIG. 3B will be described with reference to FIG. The current of the AC one-terminal AC during this period is the direction that flows into the power conversion circuit as indicated by the arrow. During this period, the switching element 43 is on and the switching element 42 is off. At this time, the switching element 41 and the switching element 44 are turned on and off in a complementary manner, whereby the potential of the high potential terminal P and the potential of the intermediate potential terminal M appear alternately at the AC one terminal AC. Here, when the switching element 44 is turned on, a reverse voltage is applied to the diode 145, and the diode 145 performs a reverse recovery operation. When the switching element 41 is turned on, there is no diode that performs the reverse recovery operation as described above.

  Next, the operation in the period (B) of FIG. 3B will be described with reference to FIG. The current of the AC one-terminal AC during this period is the direction that flows from the power conversion circuit as indicated by the arrow. During this period, the switching element 44 is on and the switching element 41 is off. At this time, the switching element 42 and the switching element 43 are complementarily turned on and off, so that the potential of the intermediate potential terminal M and the potential of the low potential terminal N appear alternately at the AC one terminal AC. Here, when the switching element 43 is turned on, a reverse voltage is applied to the diode 146 and the diode 146 performs a reverse recovery operation. When the switching element 42 is turned on, there is no diode that performs the reverse recovery operation as described above.

As described above, when the power flow is directed from the system to the power conversion device, only the diode 145 and the diode 146 are reversely recovered. Therefore, a diode made of a wide band gap material such as silicon carbide is applied to the diodes 145 and 146 that perform reverse recovery operation. The diode is preferably a Schottky barrier diode in which reverse recovery charge can be ignored. As a result, the recovery loss can be reduced, and the efficiency of the power conversion circuit can be improved. In addition, the diodes 47 and 48 that do not involve reverse recovery operation have the effect of avoiding an increase in the cost of the power conversion circuit as much as possible by applying a diode made of a low-cost material such as silicon.

Embodiment 6 FIG.
FIG. 14 is a circuit diagram of a power conversion circuit according to the sixth embodiment of the present invention. That is, it is a circuit configuration for one phase of the power conversion device having three-level output. 14, 41 to 44 are switching elements, 45, 46, 147 and 148 are diodes, and 11 and 12 are capacitors as voltage sources. In the case of a single-phase output, two circuits are used, and in the case of a three-phase output, three circuits are used to constitute a power conversion device. In the sixth embodiment, the diode 147 and the diode 148 are wide band gap semiconductor diodes, and the other diodes such as silicon are relatively slow in reverse recovery but low-cost diodes.

  As a power converter to which the sixth embodiment is applied, for example, a typical circuit diagram of a three-phase input high power factor converter is shown in FIG. In FIG. 15, reference numerals 311 to 313 denote a circuit configuration for one phase of the power conversion device having three-level outputs, that is, the circuit configuration shown in FIG. 14, and three circuits for one phase are provided to support three-phase power reception. Connected in parallel. Each AC one-terminal AC is connected to a three-phase power supply 205 via a three-phase reactor 204. The phase current is increased in power factor by well-known control for the current of the reactor 204.

  Here, consider a case where the power flow is directed from the power converter to the grid as shown in FIG. Since the operation waveforms are the same as those shown in FIG. 7, the operation will be described with reference to FIG. Since the high power factor converter operates to make the power factor as close as possible to 1, the voltage Vr for one phase of the three-phase system power source 205 and the current Ir flowing therethrough have the same frequency as shown in FIG. The phase is generally reversed. Further, the output voltage waveform Vrc of the power conversion circuit 311 for one phase at this time is as shown in the figure, and Vr and Vrc are approximately in phase. Therefore, in the period (A) in FIG. 7B, a negative current (in the direction opposite to the arrow of Ir in FIG. 15) flows in the phase current Ir. On the other hand, in the period (B) of FIG. 7B, a positive current (in the direction of the arrow of Ir in FIG. 15) flows through the phase current Ir.

  The operation for one phase of the converter in the period (A) and the period (B) in FIG. 7B will be described below. First, the operation in the period (A) of FIG. 7B will be described with reference to FIG. The current of the AC one-terminal AC during this period is a direction that flows out of the power conversion circuit as indicated by an arrow. During this period, the switching element 43 is on and the switching element 42 is off. At this time, the switching element 41 and the switching element 44 are turned on and off in a complementary manner, whereby the potential of the high potential terminal P and the potential of the intermediate potential terminal M appear alternately at the AC one terminal AC. Here, when the switching element 41 is turned on, a reverse voltage is applied to the diode 148 and the diode 148 performs a reverse recovery operation. When the switching element 44 is turned on, there is no diode that performs the reverse recovery operation as described above.

  Next, the operation in the period (B) of FIG. 7B will be described with reference to FIG. The current of the AC one-terminal AC during this period is the direction that flows into the power conversion circuit as indicated by the arrow. During this period, the switching element 44 is on and the switching element 41 is off. At this time, the switching element 42 and the switching element 43 are complementarily turned on and off, so that the potential of the intermediate potential terminal M and the potential of the low potential terminal N appear alternately at the AC one terminal AC. Here, when the switching element 42 is turned on, a reverse voltage is applied to the diode 147 and the diode 147 performs a reverse recovery operation. When the switching element 43 is turned on, there is no diode that performs the reverse recovery operation as described above.

  As described above, when the power flow is directed from the power conversion device to the grid, only the diode 147 and the diode 148 are reversely recovered. Therefore, a diode made of a wide band gap material such as silicon carbide is applied to the diodes 147 and 148 that perform reverse recovery operation. The diode is preferably a Schottky barrier diode in which reverse recovery charge can be ignored. As a result, the recovery loss can be reduced, and the efficiency of the power conversion circuit can be improved. Further, by applying a diode made of a low cost material such as silicon to the diodes 45 and 46 not involving the reverse recovery operation, there is an effect that an increase in the cost of the power conversion circuit can be avoided as much as possible.

Embodiment 7 FIG.
FIG. 17 is a circuit diagram of a power conversion circuit according to the seventh embodiment of the present invention. In the seventh embodiment, diodes made of a wide band gap material such as silicon carbide are applied to all of the diodes 145, 146, 147, and 148 in FIG. In the bidirectional power conversion device including both operations described in the fifth and sixth embodiments, all the diodes that perform the reverse recovery operation are all diodes. Therefore, if a diode made of a wide band gap material such as silicon carbide is applied to the diodes 145, 146, 147, and 148 that perform the reverse recovery operation, the power flow can be changed from the system to the power converter and from the power converter to the system. In the power converter circuit of the bidirectional power converter to be performed, a power converter circuit with little loss can be obtained. The diode is preferably a Schottky barrier diode in which reverse recovery charge can be ignored. As a result, the recovery loss can be reduced, and the efficiency of the power conversion circuit can be improved.

Embodiment 8 FIG.
In the second embodiment, only the diodes 109 and 110 to which the reverse voltage is applied in FIG. 5 are wide band gap semiconductor diodes. In the power converter as shown in FIG. 6, when the ratio of the output voltage Vrc to the DC bus voltage, that is, the voltage between the high potential terminal P and the low potential terminal N in FIG. When performing, the pulse width of the output voltage Vrc is widened as shown in FIG. 18, and the rate at which the P-point potential is generated in the AC potential is higher than the rate at which the M-point potential is generated.

FIG. 18 is a diagram showing the current and voltage for a half cycle in which the output voltage is positive, and shows the current flowing through the switching element 1, the current flowing through the diode 109, and the output voltage Vrc on the AC side in FIG. . As can be seen from the figure, since the modulation rate is high (in FIG. 18, the modulation rate is 0.9), the current flowing through the diode 109 is less effective than the current flowing through the switch 1. In the example of FIG. 18, the effective current value of the switching element 1 is 120 A, whereas the effective current value of the diode 109 is 50 A. Therefore, the current capacity of the diode 109 made of the wide band gap semiconductor shown in FIG. 5 can be selected to be smaller than the current capacity of the switching element 1. Since the other half cycle in which the output voltage is negative is the same, the current capacity of the diode 110 made of the wide band gap semiconductor can be selected to be smaller than the current capacity of the switching element 4. This selection also applies to the third embodiment, that is, the power conversion circuit of FIG. In FIG. 9, when the modulation rate is high, the effective value of the current is reduced in the diode 109 and the diode 110, so that the current capacity of these diodes can be set smaller than that of the switching element.

As described above, when the power flow is the power conversion circuit of the power conversion device from the power conversion device to the grid and the conversion is performed with a high modulation rate, the switching element 1 or the switching element is added to the diode 109 and the diode 110. By using a wide bandgap semiconductor diode having a current capacity smaller than 4, the chip size of the wide bandgap semiconductor can be reduced, and a further low-cost and low-loss power conversion circuit can be obtained.

This also applies to the power conversion circuit of FIG. 14 of the sixth embodiment. In the power conversion apparatus as shown in FIG. 15, when the operation with a high modulation rate is performed, the pulse width of the output voltage Vrc is widened as in FIG. It becomes higher than the rate at which the potential is generated. Therefore, the current flowing through the diode 148 is smaller than the current flowing through the switching element 41 by an effective value. Therefore, the current capacity of the diode 148 made of the wide band gap semiconductor shown in FIG. 14 can be selected to be smaller than the current capacity of the switching element 41. Since the other half cycle in which the output voltage is negative is the same, the current capacity of the diode 147 made of a wide band gap semiconductor can be selected to be smaller than the current capacity of the switching element 42. This selection also applies to the seventh embodiment, that is, the power conversion circuit of FIG. In FIG. 17, when the modulation rate is high, the effective value of the current is reduced by the diode 147 and the diode 148. Therefore, the current capacity of these diodes can be set smaller than that of the switching element.

  As described above, when the power flow is a power conversion circuit of the power conversion device that goes from the power conversion device to the grid and conversion with a high modulation rate is performed, the switching element 41 and the switching element are connected to the diode 147 and the diode 148. By using a wide bandgap semiconductor diode having a current capacity smaller than 42, the chip size of the wide bandgap semiconductor can be reduced, and a further low-cost and low-loss power conversion circuit can be obtained.

Embodiment 9 FIG.
In the first to sixth embodiments, the diode that does not perform the reverse recovery operation is a diode made of a non-wide band gap semiconductor. Here, the diode may be a PIN diode (p-intrinsic-n Diode) on condition that the diode does not perform reverse recovery operation. The PIN diode is a semiconductor layer having a large electrical resistance sandwiched between PNs to increase the minority carrier accumulation effect, and the voltage across the diode when a forward current flows through the diode can be made extremely low. However, although there is a drawback that the reverse recovery charge becomes large, in the first to sixth embodiments, only the reverse recovery diode is composed of a Schottky barrier diode made of a wide band gap semiconductor such as silicon carbide, for example. It does not matter if a non-operating diode is a PIN diode. As a result, the conduction loss generated in the diode can be further suppressed, so that the efficiency of the power conversion circuit can be further increased.

  In the first to eighth embodiments, the diode that performs the reverse recovery operation is configured by a wide band gap semiconductor such as silicon carbide. However, a wide band gap semiconductor such as silicon carbide can also be applied to the switching element. As a result, the switching speed is improved, and the efficiency of the power conversion circuit can be further improved.

Further, although silicon carbide (silicon carbide, SiC) has been described as an example of the wide band gap semiconductor, it is not limited to silicon carbide but may be a semiconductor such as gallium nitride material or diamond.
Moreover, in this invention, although the power converter circuit which has two types of 3 level outputs of Embodiment 1-4 and Embodiments 5-7 was shown, about the power converter circuit which has the output of 3 levels other than that It goes without saying that the same applies.

1-4, 41-44: switching elements 5-10, 45-48: diodes 105-110, 145-148: wide bandgap semiconductor diodes P: high potential terminal N: low potential terminal M: intermediate potential terminal AC: AC terminal

Claims (12)

A direct current three terminal comprising a high potential terminal that provides a high direct current potential, a low potential terminal that imparts a low direct current potential, and an intermediate potential terminal that provides an intermediate potential that is an intermediate potential between the high potential and the low potential; Provided between one AC terminal, a plurality of switching elements and a plurality of diodes, the three potentials provided by the three DC terminals appear sequentially at the one AC terminal, the three DC terminals and the one AC terminal In the power conversion circuit that converts power between
Among the plurality of diodes, in a power conversion operation, a diode that performs a reverse recovery operation by applying a reverse voltage after a forward voltage is applied and a forward current flows is a wide band gap semiconductor diode. And at least one of the diodes that does not perform reverse recovery operation is a diode other than the wide band gap semiconductor. Between the high potential terminal and the AC one terminal, in order from the high potential terminal,
A first parallel body of a first switching element and a first diode connected in antiparallel with the first switching element;
A second parallel body of a second switching element and a second diode connected in antiparallel with the second switching element;
Connected in series,
Between the one AC terminal and the low potential terminal, in order from the one AC terminal,
A third parallel body of a third switching element and a third diode connected in antiparallel with the third switching element;
A fourth parallel body of a fourth switching element and a fourth diode connected in antiparallel with the fourth switching element;
Connected in series,
A fifth diode is connected between the connection point between the first parallel body and the second parallel body and the intermediate potential terminal,
A sixth diode is connected between a connection point between the third parallel body and the fourth parallel body and the intermediate potential terminal;
Among the first to sixth diodes, in the operation of converting power, a diode that performs reverse recovery operation by applying a reverse voltage after a forward voltage is applied and a forward current flows is a wideband diode. 2. The power conversion circuit according to claim 1, wherein a gap semiconductor diode is used, and at least one of the diodes that does not perform reverse recovery operation is a diode other than a wide band gap semiconductor. The power according to claim 2, wherein the first and fourth diodes are wide band gap semiconductors, and the second, third, fifth and sixth diodes are semiconductors other than the wide band gap semiconductors. Conversion circuit.   3. The power conversion circuit according to claim 2, wherein the first to fourth diodes are wide band gap semiconductors, and the fifth and sixth diodes are semiconductors other than the wide band gap semiconductor.   The power conversion circuit according to claim 2, wherein the fifth and sixth diodes are wide band gap semiconductors, and the first to fourth diodes are semiconductors other than the wide band gap semiconductor.   3. The power of claim 2, wherein the first, fourth, fifth, and sixth diodes are wide band gap semiconductors, and the second and third diodes are semiconductors other than the wide band gap semiconductors. Conversion circuit. A first parallel body of a first switching element and a first diode connected in antiparallel to the first switching element is connected between the high potential terminal and the AC one terminal,
A second parallel body of a second switching element and a second diode connected in antiparallel to the second switching element is connected between the AC one terminal and the low potential terminal,
A third parallel body of a third switching element and a third diode connected in reverse parallel to the third switching element between the intermediate potential terminal and the one AC terminal; and a fourth switching element. And a series body of a fourth parallel body with a fourth diode connected in antiparallel to the fourth switching element,
Among the first to fourth diodes, in the operation of converting power, only the diode that performs the reverse recovery operation by applying the reverse voltage after the forward voltage is applied and the forward current flows is widened. The power conversion circuit according to claim 1, wherein a diode of a band gap semiconductor is used, and at least one of the diodes that does not perform reverse recovery operation is a diode other than the wide band gap semiconductor.   8. The power conversion circuit according to claim 7, wherein the first and second diodes are wide band gap semiconductors, and the third and fourth diodes are semiconductors other than the wide band gap semiconductor.   The power conversion circuit according to claim 7, wherein the third and fourth diodes are wide band gap semiconductors, and the first and second diodes are semiconductors other than the wide band gap semiconductor. The current capacity of the fifth diode is smaller than the current capacity of the first switching element, and the current capacity of the sixth diode is smaller than the current capacity of the fourth switching element. The power conversion circuit described. Small current capacity of the third diode than the current capacity of the second switching element, according to claim 9, the current capacity of the fourth diode being less than the current capacity of the first switching element Power conversion circuit. Power conversion circuit according to any one of claims 1 to 11 the switching element is characterized in that it is a wide band gap semiconductor switching element.

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