JP5541941B2 - Fixed abrasive saw wire - Google Patents
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- JP5541941B2 JP5541941B2 JP2010030026A JP2010030026A JP5541941B2 JP 5541941 B2 JP5541941 B2 JP 5541941B2 JP 2010030026 A JP2010030026 A JP 2010030026A JP 2010030026 A JP2010030026 A JP 2010030026A JP 5541941 B2 JP5541941 B2 JP 5541941B2
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- 239000006061 abrasive grain Substances 0.000 claims description 197
- 238000007747 plating Methods 0.000 claims description 94
- 230000002093 peripheral effect Effects 0.000 claims description 38
- 239000002245 particle Substances 0.000 claims description 12
- 239000002994 raw material Substances 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 2
- 238000005520 cutting process Methods 0.000 description 44
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 32
- 238000000034 method Methods 0.000 description 22
- 238000009713 electroplating Methods 0.000 description 20
- 238000004519 manufacturing process Methods 0.000 description 15
- 229910052759 nickel Inorganic materials 0.000 description 15
- 239000000463 material Substances 0.000 description 13
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 10
- 239000010432 diamond Substances 0.000 description 9
- 229910003460 diamond Inorganic materials 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 229910000831 Steel Inorganic materials 0.000 description 7
- 239000010959 steel Substances 0.000 description 7
- 238000003756 stirring Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- 229910052582 BN Inorganic materials 0.000 description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- KERTUBUCQCSNJU-UHFFFAOYSA-L nickel(2+);disulfamate Chemical compound [Ni+2].NS([O-])(=O)=O.NS([O-])(=O)=O KERTUBUCQCSNJU-UHFFFAOYSA-L 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
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- Polishing Bodies And Polishing Tools (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
本発明は、Ｓｉ（シリコン）等の比較的軟質な硬脆性材料の加工に適した固定砥粒式ソーワイヤに関する。 The present invention relates to a fixed abrasive saw wire suitable for processing a relatively soft hard and brittle material such as Si (silicon).
硬脆性材料からなるインゴッド等の被加工物からウエハを得るために、ワイヤを用いる被加工物のマルチ切断技術が利用されている。切断方法には、砥粒を含むスラリを吹きかけながらワイヤで被加工物を切断する遊離砥粒式と、表面に砥粒を固着させたソーワイヤによって被加工物を切断する固定砥粒式の２種類が存在する。 In order to obtain a wafer from a workpiece such as an ingot made of a hard and brittle material, a multi-cutting technique of the workpiece using a wire is used. There are two types of cutting methods: a free abrasive grain type that cuts the workpiece with a wire while spraying a slurry containing abrasive grains, and a fixed abrasive grain type that cuts the workpiece with a saw wire with the abrasive grains fixed to the surface. Exists.
固定砥粒式に使用されるソーワイヤは、ワイヤ径としてφ0.14ｍｍ前後の金属線に、φ5〜40μｍ程度の砥粒をメッキによって固着させたものが一般的である。そして、砥粒としては通常人工ダイヤモンド、ＣＢＮ（窒化ホウ素）、単結晶ＳｉＣ等の硬質単結晶化合物又はそれらに金属被覆したものが使用されている。 A saw wire used in the fixed abrasive type is generally a metal wire having a wire diameter of about φ0.14 mm and fixed with abrasive particles of about φ5 to 40 μm by plating. As the abrasive grains, usually hard single crystal compounds such as artificial diamond, CBN (boron nitride), single crystal SiC, or those coated with metal are used.
半導体素材の製造工程では、図１０に示すようなワイヤソーマシンを用いて、被加工物であるＳｉＣ（炭化シリコン）等のインゴットをスライス加工することが行われる。図１０のワイヤソーマシンでは、供給側リール２１から供給されたソーワイヤ２２は、ローラー２４ａ〜２４ｃに幾重にも巻きかけて走行する。このとき、ソーワイヤ２２はローラー間で高張力状態となっており、インゴット２３を上から押し付けると、表面に固着された砥粒によってインゴット２３が研削され、薄くスライスされる。なお、使用済みのソーワイヤ２５は、排出側リール２６へと巻き取られる。 In the manufacturing process of a semiconductor material, an ingot such as SiC (silicon carbide) as a workpiece is sliced using a wire saw machine as shown in FIG. In the wire saw machine of FIG. 10, the saw wire 22 supplied from the supply-side reel 21 travels while being wound around the rollers 24 a to 24 c several times. At this time, the saw wire 22 is in a high tension state between the rollers, and when the ingot 23 is pressed from above, the ingot 23 is ground and sliced thinly by the abrasive grains fixed to the surface. The used saw wire 25 is wound around the discharge-side reel 26.
固定砥粒式のマルチ切断技術は、切断能力が高く、特にＳｉＣやサファイア等の硬度の高い硬脆性材料の切断に用いられている。ソーワイヤに固着されている砥粒は、特許文献１の図４に示されているように、ソーワイヤの周方向に均一に固着されており、どの面においても均一な切断能力を有する。 The fixed-abrasive multi-cutting technique has a high cutting ability, and is used particularly for cutting hard and brittle materials such as SiC and sapphire. As shown in FIG. 4 of Patent Document 1, the abrasive grains fixed to the saw wire are fixed uniformly in the circumferential direction of the saw wire and have a uniform cutting ability on any surface.
従来、Ｓｉ（シリコン）等の比較的軟質な硬脆性材料は、遊離砥粒式で加工及び切断されていたが、近年では、Ｓｉインゴット等の加工及び切断についても、切断性能の高い固定砥粒式ソーワイヤを用いる切断技術が適用されつつある。 Conventionally, comparatively soft hard and brittle materials such as Si (silicon) have been processed and cut by a free abrasive type, but in recent years, fixed abrasives having high cutting performance also for processing and cutting of Si ingots and the like. Cutting techniques using a type of saw wire are being applied.
しかし、本発明者等は、Ｓｉインゴット等をソーワイヤによって加工及び切断する場合、特許文献１に開示されているような固定砥粒式のソーワイヤでは、複数の砥粒先端に均等に圧力が掛かるため、加工対象物であるＳｉインゴット等を切削するのに必要な砥粒先端圧力が得られず、結果として切断能力（切断速度）が低下してしまう場合があることを発見した。 However, when the present inventors process and cut a Si ingot or the like with a saw wire, the fixed abrasive type saw wire as disclosed in Patent Document 1 applies pressure evenly to a plurality of abrasive grain tips. It was discovered that the abrasive tip pressure required to cut the Si ingot or the like that is the object to be processed could not be obtained, and as a result, the cutting ability (cutting speed) might decrease.
本発明は、単結晶Ｓｉ等の比較的軟質な硬脆性材料の加工及び切断に適した固定砥粒式ソーワイヤの提供を目的とする。なお、「比較的軟質な硬脆性材料」とは、具体的には、単結晶Ｓｉ、磁性材料、水晶、石英ガラス類、セラミックス類、Ｓｉ全般等の各種半導体材料を意味する。 An object of the present invention is to provide a fixed abrasive saw wire suitable for processing and cutting of a relatively soft hard and brittle material such as single crystal Si. The “relatively soft hard and brittle material” specifically means various semiconductor materials such as single crystal Si, magnetic material, crystal, quartz glass, ceramics, and general Si.
本発明者等は、固定砥粒式ソーワイヤの構造について鋭意検討した結果、砥粒の平均粒径を40μｍ以下とし、ソーワイヤ表面に砥粒の一部を凝集させて固着させることにより、単結晶Ｓｉインゴット等の比較的軟質な硬脆性材料を加工・切断しても切断能力が低下しないことを見出し、本発明を完成させるに至った。 As a result of intensive studies on the structure of the fixed abrasive saw wire, the present inventors made the average grain size of the abrasive grain 40 μm or less, and agglomerated and fixed a part of the abrasive grain on the surface of the saw wire, thereby making the single crystal Si It has been found that the cutting ability does not decrease even when a relatively soft hard and brittle material such as an ingot is processed and cut, and the present invention has been completed.
具体的に、本発明は、
内側に位置する砥粒付着用メッキ層である第一メッキ層と、
外側に位置する砥粒埋込用メッキ層である第二メッキ層とによって芯線の外周面に、単体砥粒の平均粒径が40μｍ以下の砥粒を固着した固定砥粒式ソーワイヤであって、
ソーワイヤ表面に固着される砥粒には、単体砥粒と凝集砥粒とが混在しており、
長さ１ｍｍあたりの単体砥粒と凝集砥粒の合計数が10個以上58個以下であり、長さ１ｍｍあたりの凝集砥粒数が3個以上17個以下であることを特徴とする固定砥粒式ソーワイヤに関する。
Specifically, the present invention
A first plating layer, which is a plating layer for adhering abrasive grains located inside,
A fixed abrasive saw wire in which abrasive grains having an average grain size of 40 μm or less of single abrasive grains are fixed to the outer peripheral surface of the core wire by the second plating layer which is a plating layer for embedding abrasive grains located outside,
The abrasive grains fixed to the saw wire surface are a mixture of single abrasive grains and agglomerated abrasive grains ,
The total number of single abrasive grains and agglomerates per length 1mm is at 58 or less 10 or more, fixing, wherein 17 or less der Rukoto agglomerates number 3 or more per length 1mm The present invention relates to an abrasive saw wire.
ここで、「単体砥粒」とは、各砥粒が他の砥粒とは独立して、芯線の外周面に固着されたものを意味する。また、「凝集砥粒」とは、複数個の砥粒が凝集し、一体化して芯線の外周面に固着されたものを意味する。なお、砥粒としては、人工ダイヤモンドが好ましい。 Here, the “single abrasive” means that each abrasive is fixed to the outer peripheral surface of the core wire independently of the other abrasive. Further, “aggregated abrasive grains” mean those in which a plurality of abrasive grains are aggregated, integrated and fixed to the outer peripheral surface of the core wire. In addition, as an abrasive grain, an artificial diamond is preferable.
ソーワイヤの一定領域を観察した場合に、単体砥粒と凝集砥粒の総計が総砥粒数である。なお、凝集砥粒を計数する場合には、凝集砥粒に含まれる砥粒の個数ではなく、他の凝集砥粒と独立して固着されている凝集砥粒全体を１個として計数する。 When a certain area of the saw wire is observed, the total of the single abrasive grains and the aggregated abrasive grains is the total number of abrasive grains. When counting the aggregated abrasive grains, not the number of abrasive grains contained in the aggregated abrasive grains, but the total aggregated abrasive grains fixed independently of other aggregated abrasive grains is counted as one.
原料として使用する砥粒の平均粒径は、メジアン径を意味する。従来の固定砥粒式ソーワイヤは、砥粒を凝集させることなく、専ら単体砥粒を積極的に表面に固着していたが、本発明の固定砥粒式ソーワイヤは、単体砥粒と凝集砥粒とを混在させることにより、Ｓｉ等の比較的軟質な硬脆性材料の加工及び切断に適した切断性能を発揮することを特徴としている。 The average particle diameter of the abrasive grains used as a raw material means the median diameter. The conventional fixed-abrasive saw wire has positively adhered the single abrasive grains to the surface exclusively without agglomerating the abrasive grains. However, the fixed-abrasive saw wire of the present invention has a single abrasive grain and an agglomerated abrasive grain. Are mixed, and the cutting performance suitable for processing and cutting of relatively soft hard and brittle materials such as Si is exhibited.
芯線には、φ0.05〜0.50mm程度の鋼線等の金属線を使用しうる。 As the core wire, a metal wire such as a steel wire having a diameter of about 0.05 to 0.50 mm can be used.
長さ2mmあたりの断面投影図において、凝集砥粒の外周端を結ぶ直線によって形成される多角形がソーワイヤ表面と接触又は交差しないことが好ましい。なお、長さ2mmあたりの断面投影図において、凝集砥粒の最外周端を結ぶ直線によって形成される多角形がソーワイヤ表面と接触又は交差しないことの確認方法については、後述する。 In the cross-sectional projection view per 2 mm in length, it is preferable that the polygon formed by the straight line connecting the outer peripheral ends of the aggregated abrasive grains does not contact or intersect the saw wire surface. A method of confirming that the polygon formed by the straight line connecting the outermost peripheral ends of the aggregated abrasive grains in the sectional projection view per 2 mm in length does not contact or intersect with the saw wire surface will be described later.
第一メッキ層と第二メッキ層とを合わせた全メッキ層の平均厚は、原料として使用する単体砥粒の平均粒径の0.2倍以上0.5倍以下であることが好ましい。なお、ここでいう平均厚とは、全メッキ層の平均的な厚みであり、マイクロスコープを用いて測定した、無作為に選定した砥粒が存在しない部分10箇所の線径の平均値と、芯線の線径と、による算出値である。すなわち、平均厚は、（10箇所の線径の平均値−芯線の線径）÷２という計算式により算出される値である。 The average thickness of all the plating layers including the first plating layer and the second plating layer is preferably 0.2 times or more and 0.5 times or less than the average particle diameter of the single abrasive grains used as a raw material. The average thickness here is the average thickness of all plating layers, measured using a microscope, and the average value of the wire diameters of 10 portions at which randomly selected abrasive grains do not exist, It is a calculated value based on the diameter of the core wire. That is, the average thickness is a value calculated by a calculation formula of (average value of wire diameters at 10 locations−wire diameter of core wire) ÷ 2.
凝集砥粒の高さの平均値は、原料として使用する砥粒の平均粒径の1.3倍以上1.6倍以下であることが好ましい。 The average height of the aggregated abrasive grains is preferably 1.3 to 1.6 times the average particle diameter of the abrasive grains used as a raw material.
凝集砥粒の外周部が平坦化されており、外周部における第二メッキ層のメッキ厚が平坦化されていない部分における第二メッキ層の平均厚よりも小さくなっていることが好ましい。 It is preferable that the outer peripheral portion of the aggregated abrasive grains is flattened, and the plating thickness of the second plating layer in the outer peripheral portion is smaller than the average thickness of the second plating layer in the portion that is not flattened.
平坦化された凝集砥粒の外周部における第二メッキ層の硬度は、ビッカース硬度HV250以上であることが好ましい。 The hardness of the second plating layer in the outer peripheral portion of the flattened aggregated abrasive grains is preferably Vickers hardness HV250 or more.
本発明の固定砥粒式ソーワイヤによれば、Ｓｉインゴット等を効率よく加工・切断することが可能である。 According to the fixed abrasive saw wire of the present invention, it is possible to efficiently process and cut Si ingots and the like.
以下、本発明の実施の形態について、適宜図面を参酌しながら説明する。なお、本発明は、以下の記載に限定されない。実施例８，９，１１及び１２は、本発明に含まれない。 Hereinafter, embodiments of the present invention will be described with reference to the drawings as appropriate. The present invention is not limited to the following description. Examples 8, 9, 11 and 12 are not included in the present invention.
＜本発明のソーワイヤの構造＞
まず、本発明のソーワイヤの構造について説明する。本発明のソーワイヤの概略斜視図を、図１に示す。ソーワイヤ１は、芯線２と、第一メッキ層３と、第二メッキ層４と、単体砥粒５と、凝集砥粒６とから構成される。図１のＡ−Ａ断面図を、図２に示す。単体砥粒５と凝集砥粒６とは、第一メッキ層３及び第二メッキ層４によって芯線２の外周面に固着されている。内側となる第一メッキ層は砥粒付着用メッキ層として機能し、外側となる第二メッキ層は砥粒、凝集砥粒埋込用メッキ層として機能する。単体砥粒５と凝集砥粒６とは、主に第二メッキ層４によって芯線２に固着されている。
<Structure of saw wire of the present invention>
First, the structure of the saw wire of the present invention will be described. A schematic perspective view of the saw wire of the present invention is shown in FIG. The saw wire 1 includes a core wire 2, a first plating layer 3, a second plating layer 4, single abrasive grains 5, and agglomerated abrasive grains 6. FIG. 2 is a cross-sectional view taken along the line AA in FIG. The single abrasive grains 5 and the aggregated abrasive grains 6 are fixed to the outer peripheral surface of the core wire 2 by the first plating layer 3 and the second plating layer 4. The first plating layer on the inner side functions as a plating layer for attaching abrasive grains, and the second plating layer on the outer side functions as a plating layer for embedding abrasive grains and aggregated abrasive grains. The single abrasive grains 5 and the aggregated abrasive grains 6 are fixed to the core wire 2 mainly by the second plating layer 4.
使用する砥粒（単体砥粒５）の平均粒径は40μｍ以下であることが好ましい。平均粒径が40μｍを超えると比表面積が小さくなり、複数個の砥粒から凝集砥粒が形成される際の固着力が低下するために好ましくない。また、平均粒径の大きな人工ダイヤモンドは非常に高価であるため、ソーワイヤの製造コストが高くなる。 The average grain size of the abrasive grains used (single abrasive grains 5) is preferably 40 μm or less. When the average particle diameter exceeds 40 μm, the specific surface area is decreased, and the fixing force when the aggregated abrasive grains are formed from a plurality of abrasive grains is not preferable. In addition, since artificial diamond having a large average particle diameter is very expensive, the production cost of the saw wire is increased.
ソーワイヤ長さ１ｍｍあたりの総砥粒数（単体砥粒５＋凝集砥粒６の総数）は10個以上80個以下であり、凝集砥粒６の数は3個以上25個以下であることが好ましい。総砥粒数が10個未満ではソーワイヤ表面の砥粒が固着されていない部分と、被加工物とが直接接触する現象（メタルタッチ）が起こり易くなり、80個超ではソーワイヤ製造時に切断に関与しない単体砥粒５が過多となり、製造コストも高くなる。 The total number of abrasive grains per 1 mm of the saw wire length (total number of single abrasive grains 5 + aggregated abrasive grains 6) is 10 or more and 80 or less, and the number of aggregated abrasive grains 6 is preferably 3 or more and 25 or less. . If the total number of abrasive grains is less than 10, the part where the abrasive grains on the surface of the saw wire are not fixed and the workpiece are likely to come into direct contact (metal touch). The number of single abrasive grains 5 that are not increased becomes excessive, and the manufacturing cost also increases.
単体砥粒５は、ソーワイヤ１の加工・切断能力に直接関与しないが、メタルタッチを防止するガイドの役割を有し、ソーワイヤ１外周面における凝集砥粒６を疎な状態とすることで、凝集砥粒６による加工及び切断能力を発揮させている。 The single abrasive 5 is not directly related to the processing / cutting ability of the saw wire 1, but has a role of a guide for preventing metal touch, and the aggregated abrasive 6 on the outer peripheral surface of the saw wire 1 is agglomerated to make it agglomerated. The processing and cutting ability by the abrasive grains 6 is exhibited.
一方、ソーワイヤ長さ１ｍｍあたりの凝集砥粒６の数が3個未満では被加工物の切断能力が低く、25個超では従来の固定砥粒式ソーワイヤと同様に、Ｓｉインゴット等を切削するのに必要な砥粒先端圧力が得られず、切断能力（切断速度）が低下してしまう場合があるためである。なお、ソーワイヤの長さ１ｍｍあたりの総砥粒数は、ソーワイヤ全周における計数によるものである。 On the other hand, if the number of the aggregated abrasive grains 6 per 1 mm of the saw wire is less than 3, the cutting ability of the workpiece is low, and if it exceeds 25, the Si ingot or the like is cut as in the case of the conventional fixed abrasive saw wire. This is because the tip pressure of the abrasive grains necessary for the above cannot be obtained, and the cutting ability (cutting speed) may decrease. Note that the total number of abrasive grains per 1 mm length of the saw wire is based on the count on the entire circumference of the saw wire.
ソーワイヤ長さ2mmあたりの断面投影図において、凝集砥粒６の外周部７先端を結ぶ直線３１によって形成される多角形は、ソーワイヤ表面と接触又は交差しないことが好ましい。ここで、本発明のソーワイヤ長さ2mmあたりの断面投影図の一例を、図３に示す。図３では、ソーワイヤ１の断面投影図に凝集砥粒６ａ〜６ｆが存在している。そして、凝集砥粒６ａ〜６ｆの外周端（外周部の先端となる最外周部分）を直線３１で結ぶと多角形（図３では六角形）となる。なお、図３では、単体砥粒５及び凝集砥粒６ａ〜６ｆを覆う第二メッキ層４は省略されている。 In the cross-sectional projection view per 2 mm of the saw wire length, it is preferable that the polygon formed by the straight line 31 connecting the tips of the outer peripheral portions 7 of the aggregated abrasive grains 6 does not contact or intersect the surface of the saw wire. Here, FIG. 3 shows an example of a cross-sectional projection view per 2 mm length of the saw wire of the present invention. In FIG. 3, the aggregated abrasive grains 6 a to 6 f are present in the sectional projection view of the saw wire 1. And when the outer peripheral end (the outermost peripheral part used as the front-end | tip of an outer peripheral part) of the aggregation abrasive grains 6a-6f is tied by the straight line 31, it will become a polygon (in FIG. 3, hexagon). In FIG. 3, the second plating layer 4 covering the single abrasive grains 5 and the aggregated abrasive grains 6a to 6f is omitted.
この多角形を構成する直線３１（辺）は、砥粒が存在しない部分の第二メッキ層４の表面とは接触又は交差せず、多角形がソーワイヤ１（砥粒が存在しない部分の第二メッキ層）を囲んでいる。本発明のソーワイヤ１では、図３に示したように、凝集砥粒が全周に分散されている状態となっていることにより、被加工物とソーワイヤ１表面の砥粒が存在しない部分の第二メッキ層４とが接触することが防止され、かつ、被加工物の切断能力も高くなる。 The straight line 31 (side) constituting the polygon does not contact or intersect with the surface of the second plating layer 4 where the abrasive grains are not present, and the polygon is the saw wire 1 (the second portion where the abrasive grains are not present). Encloses the plating layer. In the saw wire 1 of the present invention, as shown in FIG. 3, the aggregated abrasive grains are dispersed throughout the entire circumference, so that the workpiece and the abrasive grains on the surface of the saw wire 1 do not exist. Contact with the two-plating layer 4 is prevented, and the cutting ability of the workpiece is increased.
ここで、本発明のソーワイヤ１において、長さ2mmあたりの断面投影図において、図３に示すような断面投影図を作成するための方法について説明する。まず、ソーワイヤ１をＬ字に折り曲げる。折り曲げた一方を上向きに固定し、任意の長さ2mmの範囲において、ソーワイヤ１の上面及び下面の側方からソーワイヤ１を、マイクロスコープを用いて観察する。そして、凝集砥粒５の見かけ上の高さが、原料として使用する砥粒の平均粒径の1.3倍以上1.6倍以下である凝集砥粒があれば、高さが最大となった時の回転角度を記録する。 Here, in the saw wire 1 of the present invention, a method for creating a sectional projection as shown in FIG. 3 in a sectional projection per 2 mm in length will be described. First, the saw wire 1 is bent into an L shape. One of the bent wires is fixed upward, and the saw wire 1 is observed from the side of the upper surface and the lower surface of the saw wire 1 with a microscope in an arbitrary length of 2 mm. Then, if there are aggregated abrasive grains whose apparent height is 1.3 times or more and 1.6 times or less the average grain size of the abrasive grains used as a raw material, the rotation when the height is maximum Record the angle.
例えば、図４(A)では回転角度0°の時に上面に、高さが砥粒の平均粒径の1.3倍以上1.6倍以下である凝集砥粒（●で表示されている）が存在する。そこで、回転角0°で上面に凝集砥粒が存在することを記録する。次に、ソーワイヤを反時計方向に回転し、図４(B)の回転角度ｂ°の時に、2個目の凝集砥粒が最大の高さで下面に観察されたので、回転角ｂ°で下面に凝集砥粒が存在することを記録する。 For example, in FIG. 4A, when the rotation angle is 0 °, there are aggregated abrasive grains (indicated by ●) whose height is 1.3 to 1.6 times the average grain size of the abrasive grains on the upper surface. Therefore, it is recorded that aggregated abrasive grains are present on the upper surface at a rotation angle of 0 °. Next, the saw wire was rotated counterclockwise, and when the rotation angle b ° in FIG. 4B was reached, the second aggregated abrasive grains were observed on the lower surface at the maximum height. Record the presence of agglomerated abrasive grains on the lower surface.
同様にして、図４(C)〜(E)において、回転角ｃ°、ｄ°、ｅ°の時に、それぞれ上面、下面、上面に凝集砥粒が最大の高さで確認されたことを記録する。なお、図４(F)では回転角度180°の時、下面に凝集砥粒が確認されたが、これは図４(A)で上面に確認された凝集砥粒と同じであるから、この時点で観察を終了する。 Similarly, in FIGS. 4C to 4E, when the rotation angles are c °, d °, and e °, it is recorded that the aggregated abrasive grains are confirmed at the maximum height on the upper surface, the lower surface, and the upper surface, respectively. To do. In FIG. 4 (F), when the rotation angle is 180 °, agglomerated abrasive grains were confirmed on the lower surface, but this is the same as the agglomerated abrasive grains confirmed on the upper surface in FIG. 4 (A). End observation.
上記記録を総合すると、図５に示すような断面投影図が得られる。なお、図５においては、図４の(A)〜(E)の観察において確認された凝集砥粒を表示している。図５の断面投影図でも、凝集砥粒（●で表示されている）の外周部先端を結ぶ直線によって形成される多角形（ここでは五角形）は、ソーワイヤ表面（砥粒が固着されていない表面）と接触又は交差しないことが確認される。 When the above records are combined, a sectional projection view as shown in FIG. 5 is obtained. In FIG. 5, agglomerated abrasive grains confirmed in the observation of (A) to (E) in FIG. 4 are displayed. In the sectional projection view of FIG. 5 as well, the polygon formed by a straight line connecting the tips of the outer peripheral portions of the aggregated abrasive grains (indicated by ●) is a saw wire surface (a surface on which the abrasive grains are not fixed). ) Is not contacted or crossed.
従来の固定砥粒式ソーワイヤの製造においては、砥粒を外周面に均等に分散させることが前提とされており、凝集砥粒を積極的に形成させることは検討されてこなかった。図６に示す特許文献１のソーワイヤの断面図においても、超砥粒１５は凝集せず、ソーワイヤ外周面に均等に分散されている。本発明のソーワイヤは、砥粒の一部を積極的に凝集させ、外周面に単体砥粒と凝集砥粒を一定割合で形成することにより、Ｓｉインゴット等の加工・切断に効果を発揮することを特徴としている。 In the production of a conventional fixed abrasive saw wire, it is assumed that the abrasive grains are evenly distributed on the outer peripheral surface, and it has not been studied to actively form agglomerated abrasive grains. Also in the cross-sectional view of the saw wire of Patent Document 1 shown in FIG. 6, the superabrasive grains 15 are not agglomerated and are evenly distributed on the outer peripheral surface of the saw wire. The saw wire of the present invention is effective in processing and cutting of Si ingots, etc. by actively agglomerating a part of abrasive grains and forming a single abrasive grain and agglomerated abrasive grains at a constant ratio on the outer peripheral surface. It is characterized by.
第二メッキ層４のメッキ厚は、原料として使用する砥粒の平均粒径の0.2倍以上0.5倍以下であることが好ましい。0.2倍未満では単体砥粒５及び凝集砥粒６の脱落が多くなる。一方、0.5倍超では第二メッキの使用量が多くなって製造コストが上昇すると共に、製造時間も長くなる。また、凝集砥粒６の外周部７の第二メッキ層のメッキ厚も増すため、ソーワイヤの切断能力の低下を招く。 The plating thickness of the second plating layer 4 is preferably not less than 0.2 times and not more than 0.5 times the average particle diameter of the abrasive grains used as a raw material. If it is less than 0.2 times, the single abrasive grains 5 and the agglomerated abrasive grains 6 fall off. On the other hand, if it exceeds 0.5 times, the amount of the second plating used is increased, resulting in an increase in manufacturing cost and a longer manufacturing time. Moreover, since the plating thickness of the second plating layer on the outer peripheral portion 7 of the aggregated abrasive grains 6 is increased, the saw wire cutting ability is reduced.
凝集砥粒６の外周部７は平坦化されており、外周部における第二メッキ層４が他の部分における第二メッキ層４のメッキ厚よりも小さくなっていることが好ましい。凝集砥粒６の外周部７が平坦化されると、後述する図９に示すような平坦部（平坦面）３３が形成される。平坦部３３を形成することにより、凝集砥粒６の芯線２への固着力をさらに高めると共に、凝集砥粒６を構成する砥粒の一部が露出しやすくなる。その結果、使用開始から早期に、ソーワイヤ１本来の切断能力を発揮しやすくなる。 It is preferable that the outer peripheral portion 7 of the agglomerated abrasive grains 6 is flattened, and the second plating layer 4 in the outer peripheral portion is smaller than the plating thickness of the second plating layer 4 in other portions. When the outer peripheral portion 7 of the aggregated abrasive grain 6 is flattened, a flat portion (flat surface) 33 as shown in FIG. 9 described later is formed. By forming the flat portion 33, the fixing force of the aggregated abrasive grains 6 to the core wire 2 is further increased, and part of the abrasive grains constituting the aggregated abrasive grains 6 is easily exposed. As a result, it becomes easy to demonstrate the original cutting ability of the saw wire 1 early from the start of use.
凝集砥粒６の高さの平均値は、原料として使用する砥粒の平均粒径の1.3倍以上1.6倍以下であることが好ましい。1.3倍未満ではソーワイヤ１の切断力が充分ではなく、1.6倍超では凝集砥粒６の固着が不安定となる。 The average value of the height of the aggregated abrasive grains 6 is preferably 1.3 times or more and 1.6 times or less the average particle diameter of the abrasive grains used as a raw material. If it is less than 1.3 times, the cutting force of the saw wire 1 is not sufficient, and if it exceeds 1.6 times, the fixing of the aggregated abrasive grains 6 becomes unstable.
ここで、凝集砥粒の高さとは、砥粒が固着されていない部分の第二メッキ層表面から凝集砥粒の外周端までの距離であり、図７に示すｈ２である。そして、凝集砥粒の高さの平均値とは、長さ1mmあたりの凝集砥粒数における各々の凝集砥粒高さの算術平均値である。なお、図７に示すｈ１は、単体砥粒の高さである。 Here, the height of the aggregated abrasive grains is the distance from the surface of the second plating layer where the abrasive grains are not fixed to the outer peripheral edge of the aggregated abrasive grains, and is h2 shown in FIG. The average value of the height of the aggregated abrasive grains is an arithmetic average value of the heights of the aggregated abrasive grains in the number of aggregated abrasive grains per 1 mm in length. In addition, h1 shown in FIG. 7 is the height of a single abrasive grain.
凝集砥粒の外周部を平坦化した場合、凝集砥粒の外周部における第二メッキ層の硬度は、ビッカース硬度は一般的にHV250以上であることが好ましい。HV250以上であれば、ソーワイヤ使用時に凝集砥粒の脱落防止を充分に図ることができるためである。平坦化処理した部分の第二メッキ層をこのような硬度とするためには、ニッケルメッキ層、クロムメッキ層、さらに真鍮メッキ層等を第二メッキ層の材質とすることが好ましいが、ダイヤモンド砥粒の固着保持及びダイヤモンド砥粒先端の早期表出のためには、ニッケルメッキ層とすることが好ましい。 When the outer peripheral portion of the aggregated abrasive grains is flattened, it is preferable that the Vickers hardness of the second plating layer in the outer peripheral portion of the aggregated abrasive grains is generally HV250 or more. This is because, if the HV is 250 or more, the aggregated abrasive grains can be sufficiently prevented from falling off when using the saw wire. In order to make the second plating layer in the flattened portion have such hardness, it is preferable to use a nickel plating layer, a chromium plating layer, and a brass plating layer as the material of the second plating layer. It is preferable to use a nickel plating layer in order to fix and hold the grains and to expose the diamond abrasive grain tips at an early stage.
＜本発明のソーワイヤの製造方法＞
次に、本発明のソーワイヤの製造方法について説明する。本発明のソーワイヤの製造方法の工程図を、図８に示す。また、各工程におけるソーワイヤ表面の状態を、図９に示す。
<The manufacturing method of the saw wire of this invention>
Next, the manufacturing method of the saw wire of this invention is demonstrated. FIG. 8 shows a process diagram of the saw wire manufacturing method of the present invention. Moreover, the state of the saw wire surface in each process is shown in FIG.
（砥粒付着メッキ工程）
まず、φ0.2〜1.0ｍｍのワイヤ（芯線２）に無電解メッキ又は電気メッキをする。このメッキ層（第一メッキ層３、メッキ厚0.01〜0.1μｍ）に粒径40μｍ以下の砥粒３２（人工ダイヤモンド、ＣＢＮ（窒化ホウ素）、単結晶ＳｉＣ等の硬質単結晶化合物又はそれらに金属被覆したもの）を付着させる。この工程では、ワイヤの走行によって脱落しない程度に、ワイヤに砥粒３４が単体砥粒５として付着している。
(Abrasive adhesion plating process)
First, electroless plating or electroplating is performed on a wire (core wire 2) of φ0.2 to 1.0 mm. A hard single crystal compound such as abrasive grains 32 (artificial diamond, CBN (boron nitride), single crystal SiC, etc.) having a particle size of 40 μm or less or a metal coating on these plating layers (first plating layer 3, plating thickness 0.01 to 0.1 μm) Attach). In this step, the abrasive grains 34 adhere to the wire as single abrasive grains 5 to such an extent that they do not fall off due to the running of the wire.
（電気メッキ工程１）
次に、このワイヤに電気メッキにて金属メッキ（Ｎｉメッキ等）を施し、第二メッキ層４で砥粒３２（単体砥粒５）を仮固着する。この段階では、後続する工程で遊離の砥粒３２と衝突しても脱落しない程度に、ワイヤに単体砥粒５が仮固着している。
(Electroplating process 1)
Next, metal plating (Ni plating or the like) is performed on the wire by electroplating, and the abrasive grains 32 (single abrasive grains 5) are temporarily fixed by the second plating layer 4. At this stage, the single abrasive grains 5 are temporarily fixed to the wire to the extent that they do not fall off even if they collide with the loose abrasive grains 32 in the subsequent process.
（電気メッキ工程２）
ここまでの製造工程では、ワイヤ外周面には専ら単体砥粒が仮固着されているだけであり、凝集砥粒は形成されていない。次に、砥粒３２を含有するメッキ液中でワイヤを電気メッキすると、メッキ液中の遊離の砥粒３２が、仮固着されている単体砥粒５に付着し、複数個の砥粒３２が凝集して一体化する。なお、すべての単体砥粒５に遊離の砥粒３２が付着するわけではない。
(Electroplating process 2)
In the manufacturing process so far, only single abrasive grains are temporarily fixed to the outer peripheral surface of the wire, and no aggregated abrasive grains are formed. Next, when the wire is electroplated in a plating solution containing abrasive grains 32, free abrasive grains 32 in the plating solution adhere to the temporarily fixed single abrasive grains 5, and a plurality of abrasive grains 32 are formed. Aggregate and integrate. Note that the free abrasive grains 32 do not adhere to all the single abrasive grains 5.
（電気メッキ工程３）
次に、砥粒を含有しない通常のメッキ液を用いて、ワイヤに仮固着されている凝集砥粒６を完全に固着するように、砥粒３２の平均粒径の0.2倍以上0.5倍以下のメッキ厚となるように電気メッキを行う。なお、このとき、ワイヤに仮固着されている単体砥粒５も完全に固着される。
(Electroplating process 3)
Next, the average particle diameter of the abrasive grains 32 is not less than 0.2 times and not more than 0.5 times so that the aggregated abrasive grains 6 temporarily fixed to the wire are completely fixed using a normal plating solution containing no abrasive grains. Electroplating is performed to obtain a plating thickness. At this time, the single abrasive grains 5 temporarily fixed to the wire are also completely fixed.
（先端処理工程）
最後に、ここまでの工程で製造されたソーワイヤに、ローラーによる圧延を行ったり、ダイスに通す等により、凝集砥粒６の外周端のメッキ層の少なくとも一部が除去され、平坦化される。その結果、凝集砥粒６の外周端に平坦部３３が形成される。
(Advanced treatment process)
Finally, at least a part of the plating layer on the outer peripheral edge of the aggregated abrasive grains 6 is removed and flattened by rolling the saw wire manufactured in the steps so far with a roller or passing it through a die. As a result, a flat portion 33 is formed at the outer peripheral end of the aggregated abrasive grain 6.
なお、ソーワイヤをダイスに通すことによって平坦部３３を形成する場合には、ダイス孔は芯線の線径（直径）＋（凝集砥粒の高さ×２）程度とすることが好ましい。 In addition, when forming the flat part 33 by letting a saw wire pass to a die | dye, it is preferable that a die hole is made into the wire diameter (diameter) + (height of aggregated abrasive grain x2) of a core wire.
［実施例１〜１２］
芯線としてφ0.12ｍｍの鋼線、砥粒として平均砥粒径20μｍの人工ダイヤモンドを用いて、上述した製造方法によってソーワイヤ（固定砥粒式ソーワイヤ）を製造した。
[Examples 1 to 12]
A saw wire (fixed abrasive type saw wire) was manufactured by the above-described manufacturing method using a steel wire having a diameter of 0.12 mm as a core wire and an artificial diamond having an average abrasive grain size of 20 μm as an abrasive.
（砥粒付着メッキ工程）
φ0.12ｍｍの鋼線を、平均砥粒径20μｍの人工ダイヤモンド（Ｎｉコート品）を3〜5g/L混合した銅無電解メッキ液（硫酸銅20g/L）中を通過させ、金属線表面に銅を析出するとともにダイヤモンド砥粒を付着させた。
(Abrasive adhesion plating process)
A steel wire with a diameter of 0.12 mm is passed through a copper electroless plating solution (copper sulfate 20 g / L) mixed with 3-5 g / L of artificial diamond (Ni-coated product) with an average abrasive grain size of 20 μm on the surface of the metal wire. Copper was deposited and diamond abrasive grains were deposited.
（電気メッキ工程１）
スルファミン酸ニッケル（400g/L）、塩化ニッケル（5g/L）及び硼酸（20g/L）を含むメッキ液を用い、電流密度8〜15Ａ／ｄm2という条件で、鋼線にニッケルメッキを施し、砥粒付着メッキ工程で鋼線に付着した砥粒を仮固着した。
(Electroplating process 1)
Using a plating solution containing nickel sulfamate (400 g / L), nickel chloride (5 g / L) and boric acid (20 g / L), nickel plating was applied to the steel wire under the condition of a current density of 8 to 15 A / dm 2 . Abrasive grains adhering to the steel wire in the abrasive grain adhesion plating step were temporarily fixed.
（電気メッキ工程２）
電気メッキ工程１で用いたメッキ液に、平均砥粒径20μｍの人工ダイヤモンドを３〜5ｇ/Ｌ混合した。この砥粒を含有したメッキ液を700〜1300rpmの撹拌速度で撹拌しながら、電気メッキ工程１と同じ条件で鋼線をニッケルメッキした。
(Electroplating process 2)
The plating solution used in the electroplating step 1 was mixed with 3-5 g / L of artificial diamond having an average abrasive grain size of 20 μm. The steel wire was nickel-plated under the same conditions as in the electroplating step 1 while stirring the plating solution containing the abrasive grains at a stirring speed of 700 to 1300 rpm.
（電気メッキ工程３）
電気メッキ工程１と同じ条件で電気メッキ工程２後の鋼線をニッケルメッキし、固定砥粒式ソーワイヤを製造した。ニッケルメッキ層の最終的な平均厚は、電気メッキ工程１〜３におけるワイヤの送り速度を固定することにより、すべてのソーワイヤについて7μｍに調整した。
(Electroplating process 3)
The steel wire after the electroplating step 2 was nickel-plated under the same conditions as the electroplating step 1 to produce a fixed abrasive saw wire. The final average thickness of the nickel plating layer was adjusted to 7 μm for all saw wires by fixing the wire feed speed in the electroplating steps 1 to 3.
（先端処理工程）
電気メッキ工程３後に得られたソーワイヤをローラダイスにより押圧加工（押し付け荷重2〜3kg)した。それによって、凝集砥粒の高さを29〜30μｍ程度の範囲内で均一化させ、凝集砥粒の外周部におけるメッキ層の硬度を、ビッカース硬度HV250以上とした。
(Advanced treatment process)
The saw wire obtained after the electroplating step 3 was pressed with a roller die (pressing load 2 to 3 kg). Thereby, the height of the aggregated abrasive grains was made uniform within a range of about 29 to 30 μm, and the hardness of the plating layer on the outer peripheral portion of the aggregated abrasive grains was set to Vickers hardness HV250 or more.
［比較例１〜２］
電気メッキ工程２におけるメッキ液の撹拌速度を0又は500rpmとし、実施例と同様にして固定砥粒式ソーワイヤを製造した。なお、比較例１のソーワイヤは、凝集砥粒を有しない従来のソーワイヤに相当する。
[Comparative Examples 1-2]
In the electroplating step 2, the stirring rate of the plating solution was 0 or 500 rpm, and a fixed abrasive saw wire was produced in the same manner as in the example. The saw wire of Comparative Example 1 corresponds to a conventional saw wire that does not have agglomerated abrasive grains.
上記製造方法によって得られた複数のソーワイヤについて、ソーワイヤの長さ1mmにおける総砥粒数及び凝集砥粒数を計測した。また、長さ2mmにおける断面投影図を作製し、凝集砥粒の外周部先端を結ぶ直線によって形成される図形を確認した。 With respect to the plurality of saw wires obtained by the above-described manufacturing method, the total number of abrasive grains and the number of aggregated abrasive grains when the length of the saw wire was 1 mm were measured. In addition, a cross-sectional projection diagram with a length of 2 mm was prepared, and a figure formed by a straight line connecting the tips of the outer peripheral portions of the aggregated abrasive grains was confirmed.
また、切断加工機（ヤスナガ社、TW320型）を用いて、ソーワイヤ走行速度700m／分（平均値）、ソーワイヤに掛かる張力25Ｎという条件で、被加工物として単結晶Ｓｉ（125mm×125mm×125mm）を切断した。 In addition, using a cutting machine (Yasu Naga, TW320 type), single-crystal Si (125mm x 125mm x 125mm) as a workpiece under conditions of saw wire traveling speed 700m / min (average value) and tension applied to saw wire 25N Was cut off.
ソーワイヤの長さ1mmにおける総砥粒数、凝集砥粒数、比較例１のソーワイヤが被加工物を完全に切断を終えるまでに要した時間を「１」とした場合における他のワイヤの切断時間の相対値を、表１に示す。なお、表１には、電気メッキ工程２におけるメッキ液の撹拌速度（rpm）も記載した。 The number of total abrasive grains, the number of aggregated abrasive grains in the length of 1 mm of the saw wire, and the cutting time of other wires when the time required for the saw wire of Comparative Example 1 to completely cut the workpiece is “1” The relative values are shown in Table 1. Table 1 also shows the stirring speed (rpm) of the plating solution in the electroplating step 2.
電気メッキ工程２において砥粒含有メッキ液の撹拌を行わなかった比較例１では、凝集砥粒が全く形成されなかった。また、比較例２でも凝集砥粒が全く認められなかったが、撹拌速度が大きいほど、総砥粒数及び凝集砥粒数が増加する傾向が認められた。 In Comparative Example 1 in which the stirring of the abrasive-containing plating solution was not performed in the electroplating step 2, no aggregated abrasive grains were formed. Further, although no agglomerated abrasive grains were observed in Comparative Example 2, there was a tendency for the total abrasive grain number and the aggregated abrasive grain number to increase as the stirring speed increased.
総砥粒数及び凝集砥粒数が多い実施例ほど、切断速度が大きい傾向が認められたが、実施例９及び実施例１２では、切断速度の増加が限定的であった。一方、実施例１〜実施例３のソーワイヤでは切断速度が10％以上、実施例４〜実施例７のソーワイヤでは切断速度が20％以上増加した。このように、切断速度の向上は、実施例１〜実施例７において大きいことが確認された。 As the number of total abrasive grains and the number of agglomerated abrasive grains increased, the cutting speed tended to be higher, but in Examples 9 and 12, the increase in the cutting speed was limited. On the other hand, in the saw wires of Examples 1 to 3, the cutting speed increased by 10% or more, and in the saw wires of Examples 4 to 7, the cutting speed increased by 20% or more. Thus, it was confirmed that the improvement in the cutting speed was large in Examples 1 to 7.
［実施例１３〜２４］
ニッケルメッキ層の最終的なメッキ厚を変化させること以外、実施例５と同様の操作を行い、ソーワイヤ長さ１ｍｍにおける凝集砥粒数が9〜10個、長さ１ｍｍにおける総砥粒数が37〜43個である複数のソーワイヤを製造した。なお、ニッケルメッキ層のメッキ厚は、電気メッキ工程３における線速と電流密度を変化させることによって2〜12μｍに調整した。
[Examples 13 to 24]
Except for changing the final plating thickness of the nickel plating layer, the same operation as in Example 5 was performed. The number of aggregated abrasive grains in a saw wire length of 1 mm was 9 to 10, and the total number of abrasive grains in a length of 1 mm was 37. A plurality of saw wires of ˜43 were produced. The plating thickness of the nickel plating layer was adjusted to 2 to 12 μm by changing the linear velocity and current density in the electroplating step 3.
上記製造方法によって得られた複数のソーワイヤについて、上述した切断試験と同じ条件で、同じ単結晶Ｓｉを切断した。そして、切断終了後、ソーワイヤ長さ１ｍｍにおける凝集砥粒数を測定した。その結果を、表２に示す。なお、表２には、各ソーワイヤのニッケルメッキ平均厚（μｍ）、凝集砥粒の高さの平均値（μｍ）、凝集砥粒の外周部におけるニッケルメッキ層のビッカース硬度（HV）も記載した。 About the some saw wire obtained by the said manufacturing method, the same single crystal Si was cut | disconnected on the same conditions as the cutting test mentioned above. And after completion | finish of a cutting | disconnection, the number of aggregated abrasive grains in 1 mm of saw wire length was measured. The results are shown in Table 2. In Table 2, the average nickel plating thickness (μm) of each saw wire, the average height of the aggregated abrasive grains (μm), and the Vickers hardness (HV) of the nickel plating layer in the outer peripheral portion of the aggregated abrasive grains are also described. .
ニッケルメッキ平均厚が2μｍ（実施例２２）の場合には、単結晶Ｓｉ切断後の凝集砥粒数が３分の１程度にまで減少した。また、ニッケルメッキ平均厚が3μｍ（実施例２３）の場合にも、単結晶Ｓｉ切断後の凝集砥粒数が３割程度減少した。この凝集砥粒数の減少は、ニッケルメッキ層のメッキ厚が不足しているために、単結晶Ｓｉ切断中にソーワイヤ表面から凝集砥粒が脱落したためと推察された。 When the average nickel plating thickness was 2 μm (Example 22), the number of agglomerated abrasive grains after single crystal Si cutting was reduced to about one third. Further, even when the nickel plating average thickness was 3 μm (Example 23), the number of aggregated abrasive grains after cutting the single crystal Si decreased by about 30%. This decrease in the number of agglomerated abrasive grains was presumed to be because the agglomerated abrasive grains dropped from the surface of the saw wire during the single crystal Si cutting because the plating thickness of the nickel plating layer was insufficient.
ニッケルメッキ平均厚が4〜10μｍの範囲内である実施例１３〜実施例２１については、単結晶Ｓｉ切断後の凝集砥粒数の減少も少なく、かつ、使用（切断）開始初期においても優れた切断能力が発揮された。一方、ニッケルメッキ平均厚が12μｍ（実施例２４）の場合には、単結晶Ｓｉ切断後の凝集砥粒数の減少も認められなかったが、電気メッキ工程３に時間がかかるとともに、使用開始初期の切断能力が低い傾向が認められた。このため、ニッケルメッキ層の平均厚は、4μｍ以上10μｍ以下に調整することが好ましいと考察された。 In Examples 13 to 21 in which the average nickel plating thickness is in the range of 4 to 10 μm, the decrease in the number of agglomerated abrasive grains after cutting single-crystal Si was small, and excellent at the beginning of use (cutting). Cutting ability was demonstrated. On the other hand, when the average nickel plating thickness was 12 μm (Example 24), no decrease in the number of agglomerated abrasive grains after cutting single-crystal Si was observed, but the electroplating step 3 took time and was initially used. There was a tendency for the cutting ability to be low. For this reason, it was considered that the average thickness of the nickel plating layer is preferably adjusted to 4 μm or more and 10 μm or less.
本発明のソーワイヤは、Ｓｉ等の比較的軟質な硬脆性材料を切断又は加工するための固定砥粒式ソーワイヤとして、半導体、材料化学、加工機器等の分野において有用である。 The saw wire of the present invention is useful in the fields of semiconductors, material chemistry, processing equipment and the like as a fixed abrasive saw wire for cutting or processing a relatively soft hard and brittle material such as Si.
１：本発明のソーワイヤ
２：芯線
３：第一メッキ層（砥粒付着用メッキ層）
４：第二メッキ層
５：単体砥粒
６：凝集砥粒
７：凝集砥粒の外周部
８：特許文献１のソーワイヤの断面図
９：ワイヤ（芯線）
１０：銅メッキ層
１１：ニッケルメッキ層
１２：超砥粒
１３：超砥粒の内端
１４：超砥粒の外端
２１：供給側リール
２２：ソーワイヤ
２３：インゴット（被加工物）
２４ａ，２４ｂ，２４ｃ：ローラー
２５：使用済みのソーワイヤ
２６：排出側リール
３１：凝集砥粒の外周部の先端を結ぶ直線
３２：粒径40μｍ以下の砥粒
３３：平坦部（平坦面）
1: Saw wire of the present invention 2: Core wire 3: First plating layer (plating layer for adhering abrasive grains)
4: Second plating layer 5: Abrasive grains 6: Agglomerated abrasive grains 7: Peripheral portion of agglomerated abrasive grains 8: Cross-sectional view of saw wire of Patent Document 1 9: Wire (core wire)
DESCRIPTION OF SYMBOLS 10: Copper plating layer 11: Nickel plating layer 12: Super abrasive grain 13: Inner end of super abrasive grain 14: Outer end of super abrasive grain 21: Supply side reel 22: Saw wire 23: Ingot (workpiece)
24a, 24b, 24c: roller 25: used saw wire 26: discharge-side reel 31: straight line connecting tips of outer peripheral portions of the aggregated abrasive grains 32: abrasive grains having a grain size of 40 μm or less 33: flat portion (flat surface)
Claims (6)
外側に位置する砥粒埋込用メッキ層である第二メッキ層とによって芯線の外周面に、単体砥粒の平均粒径が40μｍ以下の砥粒を固着した固定砥粒式ソーワイヤであって、
ソーワイヤ表面に固着される砥粒には、単体砥粒と凝集砥粒とが混在しており、
長さ１ｍｍあたりの単体砥粒と凝集砥粒の合計数が10個以上58個以下であり、長さ１ｍｍあたりの凝集砥粒数が3個以上17個以下であることを特徴とする固定砥粒式ソーワイヤ。 A first plating layer, which is a plating layer for adhering abrasive grains located inside,
A fixed abrasive saw wire in which abrasive grains having an average grain size of 40 μm or less of single abrasive grains are fixed to the outer peripheral surface of the core wire by the second plating layer which is a plating layer for embedding abrasive grains located outside,
The abrasive grains fixed to the saw wire surface are a mixture of single abrasive grains and agglomerated abrasive grains ,
The total number of single abrasive grains and agglomerates per length 1mm is at 58 or less 10 or more, fixing, wherein 17 or less der Rukoto agglomerates number 3 or more per length 1mm Abrasive saw wire.
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| RU2508968C2 (en) | 2009-08-14 | 2014-03-10 | Сэнт-Гобэн Эбрейзивс, Инк. | Abrasive article (versions) and method of its forming |
| JP5542938B2 (en) | 2009-08-14 | 2014-07-09 | サンーゴバン アブレイシブズ，インコーポレイティド | Abrasive article comprising abrasive particles bonded to an elongated object |
| TWI466990B (en) | 2010-12-30 | 2015-01-01 | Saint Gobain Abrasives Inc | Abrasive article and forming method |
| WO2013040423A2 (en) | 2011-09-16 | 2013-03-21 | Saint-Gobain Abrasives, Inc. | Abrasive article and method of forming |
| TW201402274A (en) * | 2012-06-29 | 2014-01-16 | Saint Gobain Abrasives Inc | Abrasive article and method of forming |
| TWI477343B (en) | 2012-06-29 | 2015-03-21 | Saint Gobain Abrasives Inc | Abrasive article and method of forming |
| TW201404527A (en) * | 2012-06-29 | 2014-02-01 | Saint Gobain Abrasives Inc | Abrasive article and method of forming |
| JP6039935B2 (en) * | 2012-06-29 | 2016-12-07 | 出光興産株式会社 | Aqueous processing fluid |
| TWI474889B (en) * | 2012-06-29 | 2015-03-01 | Saint Gobain Abrasives Inc | Abrasive article and method of forming |
| TWI483803B (en) * | 2012-06-29 | 2015-05-11 | Saint Gobain Abrasives Inc | Method of conducting a cutting operation on a workpiece |
| JP2014083673A (en) * | 2012-10-26 | 2014-05-12 | Riken Corundum Co Ltd | Wire tool with abrasive grain |
| TW201441355A (en) | 2013-04-19 | 2014-11-01 | Saint Gobain Abrasives Inc | Abrasive article and method of forming |
| JP6329796B2 (en) * | 2014-03-27 | 2018-05-23 | 古河電気工業株式会社 | Manufacturing method of wire tool |
| TWI621505B (en) | 2015-06-29 | 2018-04-21 | 聖高拜磨料有限公司 | Abrasive article and forming method |
| EP3687731A4 (en) * | 2017-09-28 | 2021-06-02 | Saint-Gobain Abrasives, Inc. | ABRASIVE ARTICLE AND CORRESPONDING TRAINING PROCESS |
| CN114311355B (en) * | 2022-03-14 | 2022-05-27 | 广东高景太阳能科技有限公司 | Production method of monocrystalline silicon wafer and monocrystalline silicon wafer |
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