JP5539650B2 - マイクロプラズマ装置 - Google Patents
マイクロプラズマ装置 Download PDFInfo
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- JP5539650B2 JP5539650B2 JP2008551481A JP2008551481A JP5539650B2 JP 5539650 B2 JP5539650 B2 JP 5539650B2 JP 2008551481 A JP2008551481 A JP 2008551481A JP 2008551481 A JP2008551481 A JP 2008551481A JP 5539650 B2 JP5539650 B2 JP 5539650B2
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- 239000000758 substrate Substances 0.000 claims description 55
- 239000000463 material Substances 0.000 claims description 31
- 239000002861 polymer material Substances 0.000 claims description 14
- 239000000853 adhesive Substances 0.000 claims description 10
- 230000001070 adhesive effect Effects 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 6
- 239000003822 epoxy resin Substances 0.000 claims description 5
- 229920000647 polyepoxide Polymers 0.000 claims description 5
- 229920005570 flexible polymer Polymers 0.000 claims description 3
- 210000002381 plasma Anatomy 0.000 description 104
- 229920000642 polymer Polymers 0.000 description 60
- 238000000034 method Methods 0.000 description 37
- 239000007789 gas Substances 0.000 description 34
- 239000010410 layer Substances 0.000 description 29
- 238000004519 manufacturing process Methods 0.000 description 24
- 208000028659 discharge Diseases 0.000 description 22
- 238000003491 array Methods 0.000 description 19
- 230000003287 optical effect Effects 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 238000000465 moulding Methods 0.000 description 8
- 210000004027 cell Anatomy 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 7
- 239000007788 liquid Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000010076 replication Effects 0.000 description 6
- 238000005553 drilling Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000000295 emission spectrum Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- 239000000395 magnesium oxide Substances 0.000 description 3
- 229920000728 polyester Polymers 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000006467 substitution reaction Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000181 anti-adherent effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 210000000601 blood cell Anatomy 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 229920002457 flexible plastic Polymers 0.000 description 2
- 230000000977 initiatory effect Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 238000001307 laser spectroscopy Methods 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 238000005459 micromachining Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000307 polymer substrate Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000013036 cure process Methods 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001053 micromoulding Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 230000003362 replicative effect Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C35/00—Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
- B29C35/02—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
- B29C65/70—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by moulding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
- H01J11/10—AC-PDPs with at least one main electrode being out of contact with the plasma
- H01J11/18—AC-PDPs with at least one main electrode being out of contact with the plasma containing a plurality of independent closed structures for containing the gas, e.g. plasma tube array [PTA] display panels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J65/00—Lamps without any electrode inside the vessel; Lamps with at least one main electrode outside the vessel
- H01J65/04—Lamps in which a gas filling is excited to luminesce by an external electromagnetic field or by external corpuscular radiation, e.g. for indicating plasma display panels
- H01J65/042—Lamps in which a gas filling is excited to luminesce by an external electromagnetic field or by external corpuscular radiation, e.g. for indicating plasma display panels by an external electromagnetic field
- H01J65/046—Lamps in which a gas filling is excited to luminesce by an external electromagnetic field or by external corpuscular radiation, e.g. for indicating plasma display panels by an external electromagnetic field the field being produced by using capacitive means around the vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/24—Manufacture or joining of vessels, leading-in conductors or bases
- H01J9/245—Manufacture or joining of vessels, leading-in conductors or bases specially adapted for gas discharge tubes or lamps
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Manufacturing & Machinery (AREA)
- Oral & Maxillofacial Surgery (AREA)
- Thermal Sciences (AREA)
- Mechanical Engineering (AREA)
- Health & Medical Sciences (AREA)
- Micromachines (AREA)
- Gas-Filled Discharge Tubes (AREA)
- Casting Or Compression Moulding Of Plastics Or The Like (AREA)
Description
マイクロキャビティプラズマ装置は、また、フォトリトグラフィー技術によりエッチングできるガラスに製造される。例えば非特許文献1参照。珪素による構造物と同じく、アレイのサイズは、基体のサイズおよび表面域(フォトリトグラフィーにより接触してパターン化される)に制限される。アレイのコストは、複数のフォトリトグラフィー工程を行うコストに支配される。
本発明の種々の特徴は、請求の範囲に述べられている。
12 基体
14 底部電極
16 マイクロキャビティ
18 ポリマー層
20 絶縁コーティング
22 ポリマー基体
24 上方の電極
25 絶縁層
26 接着物
27 追加の層
30 型の用意
32 基体の用意
34 圧縮
36 硬化
38 分離
40 予備処理
42 被覆
44 導入
46 シール
50 マイクロチャンネル
50a 流れのチャンネル
50b プラズマチャンネル
51 プラズマリブ
Claims (8)
- 可撓性材料からなる可撓性の底部基体;
該底部基体により支持された連続的な可撓性のポリマー材料層であって、該ポリマー材料層の体積内に画成されており該ポリマー材料層の一の表面にて開口する溝または空隙からなる複数のマイクロチャンネルまたは複数のマイクロキャビティを有するポリマー材料層;
該ポリマー材料層の体積内に画成された該複数のマイクロチャンネルまたは複数のマイクロキャビティに閉じ込められたプラズマ媒体;
該可撓性のポリマー材料層と該可撓性の底部基体との間に配置され、該複数のマイクロチャンネルまたは複数のマイクロキャビティの閉止された底端部を画成する該ポリマー材料層の薄い部分によって該複数のマイクロチャンネルまたは複数のマイクロキャビティから絶縁された、薄いフィルム状の底部電極;
該複数のマイクロチャンネルまたは複数のマイクロキャビティ内でプラズマを含むために該ポリマー材料層と結合する、可撓性材料からなる可撓性の上部基体;
該上部基体に担持され、該底部電極と協働して該プラズマ媒体内でプラズマを励起する、薄いフィルム状で透明な上部電極;
プラズマから該上部電極を保護する、薄い可撓性の絶縁層
からなることを特徴とするマイクロプラズマ装置。 - 該ポリマー材料層が可視域およびUV付近で透明なポリマー材料を備える請求項1の装置。
- 該上部基体が透明である請求項1の装置。
- 該ポリマー材料層がエポキシ樹脂を備える請求項1の装置。
- 該ポリマー材料層がUVにより硬化可能なポリマー材料を備える請求項1の装置。
- 該複数のマイクロチャンネルまたは複数のマイクロキャビティが、複数のマイクロキャビティと接続する少なくとも1つのマイクロチャンネルを含む請求項1の装置。
- 該ポリマー材料層の薄い部分が、該底部電極から、該複数のマイクロチャンネルまたは複数のマイクロキャビティを分けており、
該複数のマイクロチャンネルまたは複数のマイクロキャビティの表面上に付された絶縁コーティングが該プラズマから該ポリマー材料層を保護し、
該上部電極および該上部基体が、該ポリマー材料層に最も近い接着物により保持される請求項1の装置。 - 該接着物が、該複数のマイクロチャンネルまたは複数のマイクロキャビティの間に該プラズマ媒体が流れるような接着物のパターン化層からなる請求項7の装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US76131606P | 2006-01-23 | 2006-01-23 | |
US60/761,316 | 2006-01-23 | ||
PCT/US2007/001951 WO2007087371A2 (en) | 2006-01-23 | 2007-01-23 | Polymer microcavity and microchannel devices and fabrication method |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009524204A JP2009524204A (ja) | 2009-06-25 |
JP5539650B2 true JP5539650B2 (ja) | 2014-07-02 |
Family
ID=38309834
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008551481A Expired - Fee Related JP5539650B2 (ja) | 2006-01-23 | 2007-01-23 | マイクロプラズマ装置 |
Country Status (4)
Country | Link |
---|---|
US (2) | US8497631B2 (ja) |
EP (1) | EP1977439A4 (ja) |
JP (1) | JP5539650B2 (ja) |
WO (1) | WO2007087371A2 (ja) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
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US8198811B1 (en) | 2002-05-21 | 2012-06-12 | Imaging Systems Technology | Plasma-Disc PDP |
US7772773B1 (en) | 2003-11-13 | 2010-08-10 | Imaging Systems Technology | Electrode configurations for plasma-dome PDP |
US8339041B1 (en) | 2004-04-26 | 2012-12-25 | Imaging Systems Technology, Inc. | Plasma-shell gas discharge device with combined organic and inorganic luminescent substances |
US8368303B1 (en) | 2004-06-21 | 2013-02-05 | Imaging Systems Technology, Inc. | Gas discharge device with electrical conductive bonding material |
US8113898B1 (en) | 2004-06-21 | 2012-02-14 | Imaging Systems Technology, Inc. | Gas discharge device with electrical conductive bonding material |
US8299696B1 (en) | 2005-02-22 | 2012-10-30 | Imaging Systems Technology | Plasma-shell gas discharge device |
JP5539650B2 (ja) | 2006-01-23 | 2014-07-02 | ザ ボード オブ トラスティーズ オブ ザ ユニバーシティ オブ イリノイ | マイクロプラズマ装置 |
US8618733B1 (en) | 2006-01-26 | 2013-12-31 | Imaging Systems Technology, Inc. | Electrode configurations for plasma-shell gas discharge device |
US8035303B1 (en) | 2006-02-16 | 2011-10-11 | Imaging Systems Technology | Electrode configurations for gas discharge device |
US8410695B1 (en) | 2006-02-16 | 2013-04-02 | Imaging Systems Technology | Gas discharge device incorporating gas-filled plasma-shell and method of manufacturing thereof |
US8278824B1 (en) | 2006-02-16 | 2012-10-02 | Imaging Systems Technology, Inc. | Gas discharge electrode configurations |
US7854505B2 (en) * | 2006-03-15 | 2010-12-21 | The Board Of Trustees Of The University Of Illinois | Passive and active photonic crystal structures and devices |
US8952612B1 (en) | 2006-09-15 | 2015-02-10 | Imaging Systems Technology, Inc. | Microdischarge display with fluorescent conversion material |
US8442091B2 (en) * | 2007-10-25 | 2013-05-14 | The Board Of Trustees Of The University Of Illinois | Microchannel laser having microplasma gain media |
US8179032B2 (en) | 2008-09-23 | 2012-05-15 | The Board Of Trustees Of The University Of Illinois | Ellipsoidal microcavity plasma devices and powder blasting formation |
US9013102B1 (en) | 2009-05-23 | 2015-04-21 | Imaging Systems Technology, Inc. | Radiation detector with tiled substrates |
US8525276B2 (en) | 2009-06-17 | 2013-09-03 | The Board of Trustees of the University of California | Hybrid plasma-semiconductor electronic and optical devices |
US8541946B2 (en) * | 2009-12-17 | 2013-09-24 | The Board Of Trustees Of The University Of Illinois | Variable electric field strength metal and metal oxide microplasma lamps and fabrication |
CN101794699B (zh) * | 2010-03-23 | 2011-11-09 | 山东大学 | 可装配二维微等离子体阵列装置及其制备方法 |
US9263558B2 (en) | 2010-07-19 | 2016-02-16 | The Board Of Trustees Of The University Of Illinois | Hybrid plasma-semiconductor transistors, logic devices and arrays |
US8816435B2 (en) | 2010-07-19 | 2014-08-26 | The Board Of Trustees Of The University Of Illinois | Flexible hybrid plasma-semiconductor transistors and arrays |
US8796927B2 (en) * | 2012-02-03 | 2014-08-05 | Infineon Technologies Ag | Plasma cell and method of manufacturing a plasma cell |
US9529099B2 (en) * | 2012-11-14 | 2016-12-27 | Integrated Sensors, Llc | Microcavity plasma panel radiation detector |
KR101594464B1 (ko) * | 2013-10-02 | 2016-02-18 | 아주대학교산학협력단 | 마이크로 플라즈마 분사 소자, 적층형 마이크로 플라즈마 분사 모듈 및 마이크로 플라즈마 분사 소자의 제작 방법 |
US10240815B2 (en) | 2015-05-08 | 2019-03-26 | The Board Of Trustees Of The University Of Illinois | Efficient dissociation of water vapor in arrays of microchannel plasma devices |
JP6006393B1 (ja) * | 2015-10-09 | 2016-10-12 | アルファ株式会社 | プラズマ処理装置 |
US10259081B2 (en) | 2016-02-08 | 2019-04-16 | Board Of Regents, The University Of Texas System | Connecting metal foils/wires and components in 3D printed substrates with wire bonding |
US10271415B2 (en) * | 2016-04-30 | 2019-04-23 | The Boeing Company | Semiconductor micro-hollow cathode discharge device for plasma jet generation |
WO2018004507A1 (en) * | 2016-06-27 | 2018-01-04 | Eden Park Illumination | High-power ultraviolet (uv) and vacuum ultraviolet (vuv) lamps with micro-cavity plasma arrays |
US10625235B2 (en) * | 2016-10-10 | 2020-04-21 | The Board Of Trustees Of The University Of Illinois | Hybrid photochemical/plasma reactor devices |
US11202843B2 (en) * | 2017-05-18 | 2021-12-21 | The Board Of Trustees Of The University Of Illinois | Microplasma devices for surface or object treatment and biofilm removal |
EP3837585A4 (en) * | 2018-08-14 | 2022-10-19 | The Board of Trustees of the University of Illinois | PHOTOVARNISH FREE PHOTOLITHOGRAPHY, PHOTO TREATMENT TOOLS AND PROCESSES USING VUV OR DEEP UV LAMPS |
CN112811386A (zh) * | 2020-12-30 | 2021-05-18 | 哈尔滨工业大学(深圳) | 3d微电极的制备方法 |
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- 2007-01-23 JP JP2008551481A patent/JP5539650B2/ja not_active Expired - Fee Related
- 2007-01-23 WO PCT/US2007/001951 patent/WO2007087371A2/en active Application Filing
- 2007-01-23 US US11/698,264 patent/US8497631B2/en active Active
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Also Published As
Publication number | Publication date |
---|---|
EP1977439A4 (en) | 2010-04-28 |
US20070200499A1 (en) | 2007-08-30 |
EP1977439A2 (en) | 2008-10-08 |
JP2009524204A (ja) | 2009-06-25 |
US8864542B2 (en) | 2014-10-21 |
WO2007087371A3 (en) | 2008-07-17 |
US20140265036A1 (en) | 2014-09-18 |
US8497631B2 (en) | 2013-07-30 |
WO2007087371A2 (en) | 2007-08-02 |
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