JP5528101B2 - Light emitting element component and light emitting device including the same - Google Patents

Description

  The present invention relates to a light emitting element component and a light emitting device including the same.

  In recent years, communication using infrared light has been adopted in various devices such as electric devices, optical devices, and portable devices. However, since infrared light is invisible light, it is difficult to grasp the communication status. In view of this, an apparatus that employs a light emitting element that emits visible light in combination with a light emitting element that emits infrared light has been developed.

JP-A-10-303463

  However, in the invention described in Patent Document 1, when two light emitting diodes are attached to the device, the device becomes large.

  The present invention has been conceived under the above circumstances, and an object of the present invention is to provide a light-emitting element component that can be reduced in size and a light-emitting device including the light-emitting element component.

Emitting element component according to the present invention comprises a supporting substrate, the supporting substrate is provided on the top surface of the plurality of first light-emitting portion that emits invisible light, on each of the first light emitting portion provided by the, transmitted through the invisible light, and controls the second light-emitting portions of the plurality of emitting visible light, the driving of the plurality of first light emitting unit and the plurality of second light-emitting portion comprising a driving circuit, wherein the drive circuit, when the light emission of all of the plurality of first light-emitting portion is formed of any of the plurality of second light emitting portion to emit light, the plurality Among the first light emitting units, when the second light emitting unit provided above does not emit light, the second light emitting unit provided above does not emit light. The first light emitting unit is configured to emit light .

  A light-emitting device according to the present invention includes the above-described light-emitting element component and a housing that supports the light-emitting element component.

  ADVANTAGE OF THE INVENTION According to this invention, the light emitting element component which can be reduced in size, and a light-emitting device provided with the same can be provided.

It is a top view which shows the light emitting element array which is 1st Embodiment of the light emitting element component which concerns on this invention. It is principal part sectional drawing along the II-II line of the light emitting element array shown in FIG. It is principal part sectional drawing which shows the light emitting element array which is 2nd Embodiment of the light emitting element component which concerns on this invention. FIG. 4 is a cross-sectional view of a main part taken along line IV-IV of the light emitting element array shown in FIG. It is principal part sectional drawing which shows the light emitting element array which is 3rd Embodiment of the light emitting element component which concerns on this invention. FIG. 4 is a cross-sectional view of main parts taken along line VI-VI of the light emitting element array shown in FIG. 3. It is principal part sectional drawing which shows one Embodiment of the imaging device which concerns on this invention.

<First Embodiment of Light-Emitting Element Components>
Hereinafter, a light emitting element array as a first embodiment of a light emitting element component according to the present invention will be described with reference to the drawings.

  The light emitting element array 10 illustrated in FIGS. 1 and 2 includes a support substrate 20, a light emitting element 30, an electrode layer 40, a protective layer 50, and a drive circuit 60. A part of the light emitting element 30 functions as a light emitting unit.

The support substrate 20 has a function of supporting the light emitting element 30, the electrode layer 40, and the protective layer 50. This support substrate 20 has electrical insulation. Here, “having electrical insulation” refers to a level at which current does not substantially flow, for example, an electrical resistivity of 1.0 × 10 ⁷ [Ω · m] or more. The support substrate 20 is made of gallium arsenide (GaAs) and is hardly doped with impurities. Examples of the thickness of the support substrate 20 include a thickness in the range of 100 to 350 [μm].

  A plurality of light emitting elements 30 are provided on the support substrate 20. The plurality of light emitting elements 30 are arranged in a lattice shape when seen in a plan view (hereinafter simply referred to as “plan view”) from the normal direction of the main surface 20 a of the support base 20. In the present embodiment, the plurality of light emitting elements 30 are arranged in an orthogonal lattice shape. In the present embodiment, the two directions of the orthogonal lattice are defined as a first direction D1, D2 and a second direction D3, D4.

The light emitting element 30 includes a first type 1 current spreading layer 31, a first type 1 cladding layer 32, a first active layer 33, a first type 2 cladding layer 34, and a type 2 current spreading layer 35. And a second type 2 clad layer 36, a second active layer 37, a second type 1 clad layer 38, and a second type 1 current spreading layer 39 are laminated. Here, “type 1” and “type 2” refer to either the n-type or p-type semiconductor, and one is represented as one and the other is represented as two. In this embodiment, the n-type is adopted as one type and the p-type is adopted as the second type, but the n-type and the p-type may be reversed.

  Of the layers stacked as one light emitting element 30, the first first-type cladding layer 32, the first active layer 33, and the first two-type cladding layer 34 function as the first light emitting unit 30a. ing. The second type 2 cladding layer 36, the second active layer 37, and the second type 1 cladding layer 38 function as the second light emitting unit 30b. In other words, the light emitting element 30 is provided by stacking the second light emitting unit 30b on the first light emitting unit 30a. The light emitting element 30 is configured such that the first light emitting unit 30a emits invisible light, and the second light emitting unit 30b is configured to emit visible light. In the present embodiment, infrared light is employed as invisible light emitted from the first light emitting unit 30a. Here, “visible light” refers to light that can be seen by humans, for example, light having a wavelength in the range of 360 nm to 850 nm. “Invisible light” refers to light that cannot be seen by humans, and includes infrared and ultraviolet light. For example, the infrared light has a wavelength in the range of 850 [nm] to 1.6 [μm], and the ultraviolet light has a wavelength of 360 [nm] to 200 [nm]. Say things.

  Moreover, in this embodiment, it is comprised so that the invisible light which the 1st light emission part 30a emits permeate | transmits the 2nd light emission part 30b. Here, “transmitting” means that attenuation at the center frequency of transmitted light is 10% or less. In this way, in order to make the invisible light emitted from the first light emitting unit 30a pass through the second light emitting unit 30b, the band gap may be made smaller than the wavelength of the invisible light to be transmitted.

A plurality of the first type 1 current spreading layers 31 are provided on the main surface 20a of the support substrate 20, and are arranged in a lattice shape when viewed in plan. In the present embodiment, the first type 1 current diffusion layers 31 are arranged in an orthogonal lattice pattern along the first direction D1, D2 and the second direction D3, D4. The first type 1 current diffusion layer 31 has a function of diffusing the current flowing through the first light emitting unit 30a over a wide area. The first type 1 current diffusion layer 31 is provided in a rectangular shape in plan view. The first one type current diffusion layer 31, as shown in FIG. 2, has a mesa area of the upper surface than the lower surface area is small Kuna'.

The first type 1 current diffusion layer 31 of the present embodiment functions as an n-type semiconductor. The first type 1 current diffusion layer 31 is made of gallium arsenide (GaAs) and doped with, for example, silicon (Si) which is an n-type impurity. As this doping concentration, the range of 1 * 10 < ¹⁷ > -1 * 10 < ¹⁹ > [atom / cm < ³ >] is mentioned, for example. Examples of the n-type impurity include elements of Group IV and Group VI such as germanium (Ge), selenium (Se), and tellurium (Te) in addition to Si.

  The first type 1 cladding layer 32 is provided on each of the first type 1 current diffusion layers 31. The first one-type cladding layer 32 is provided in a rectangular shape in plan view. The first one-type cladding layer 32 is configured so that the area is smaller than the area of the first one-type current diffusion layer 31. That is, the first type 1 current diffusion layer 31 is provided so as to spread from below the first type 1 cladding layer 32.

The first one-type cladding layer 32 of the present embodiment functions as an n-type semiconductor in the first light emitting unit 30a. The first one-type cladding layer 32 is made of indium aluminum phosphide (AlInP), and is doped with, for example, silicon (Si) that is an n-type impurity. As this doping concentration, the range of 1 * 10 < ¹⁷ > -1 * 10 < ¹⁹ > [atom / cm < ³ >] is mentioned, for example. Examples of the n-type impurity include elements of Group IV and Group VI such as germanium (Ge), selenium (Se), and tellurium (Te) in addition to Si. Examples of the thickness of the first one-type cladding layer 32 include a thickness in the range of 0.4 to 1 [μm].

  The first active layer 33 is provided on each of the first one-type cladding layers 32. The first active layer 33 functions as a light emitting layer that mainly emits infrared light emitted from the first light emitting unit 30a. The first active layer 33 can emit light having a desired wavelength by controlling the composition and thickness of the band gap structure. The first active layer 33 is provided in a rectangular shape in plan view.

  The first active layer 33 of the present embodiment functions as an intrinsic semiconductor in the first light emitting unit 30a. The first active layer 33 is made of aluminum gallium indium phosphide (AlGaInP) and is hardly doped with impurities. Examples of the thickness of the first active layer 33 include a thickness in the range of 0.3 to 1 [μm].

  The first type 2 cladding layer 34 is provided on each of the first active layers 33. The first two-type clad layer 34 is provided in a rectangular shape in plan view.

The first two-type cladding layer 34 of the present embodiment functions as a p-type semiconductor in the first light emitting unit 30a. The first two-type cladding layer 34 is made of AlInP, and is doped with, for example, zinc (Zn) which is a p-type impurity. As this doping concentration, the range of 1 * 10 < ¹⁷ > -1 * 10 < ¹⁹ > [atom / cm < ³ >] is mentioned, for example. Examples of the p-type impurity include elements such as beryllium (Be), magnesium (Mg), calcium (Ca), and carbon (C _anion ) in addition to Zn. Examples of the thickness of the first two-type cladding layer 34 include a thickness in the range of 0.4 to 1 [μm].

  The two-type current spreading layer 35 is provided on each of the first two-type clad layers 34. The two-type current diffusion layer 35 has a function of diffusing the current flowing through the first light emitting unit 30a and the second light emitting unit 30b over a wide area. The two-type current spreading layer 35 is commonly connected to the first light emitting unit 30a and the second light emitting unit 30b. The two-type current diffusion layer 35 is provided in a rectangular shape in plan view.

The two-type current diffusion layer 35 of the present embodiment functions as a p-type semiconductor. The two-type current diffusion layer 35 is made of aluminum gallium arsenide (AlGaAs) and doped with, for example, Zn which is a p-type impurity. As this doping concentration, the range of 1 * 10 < ¹⁷ > -1 * 10 < ¹⁹ > [atom / cm < ³ >] is mentioned, for example. Examples of the p-type impurity include elements such as Be, Mg, Ca, and _Canyon in addition to Si.

  On each of the two-type current diffusion layers 35, a two-type contact layer 351 is provided. The two-type contact layer 351 contributes to reducing the contact resistance when the two-type current diffusion layer 35 and the electrode 40 are connected.

  A plurality of second type 2 cladding layers 36 are provided on each type 2 contact layer 351. The second type-two clad layer 36 is provided in a rectangular shape in plan view. The second type 2 cladding layer 36 is configured such that the area is smaller than the area of the type 2 current diffusion layer 35. That is, the type 2 current spreading layer 35 is provided so as to spread from the bottom to the periphery of the second type 2 cladding layer 36.

The second type 2 cladding layer 36 of this embodiment functions as a p-type semiconductor in the second light emitting unit 30b. The second two-type cladding layer 36 is made of AlInP, and is doped with Zn which is a p-type impurity, for example. As a doping concentration of, for example, a range of 1 × 10 ¹⁷ to 1 × 10 ¹⁹ [atom / cm ³ ] can be given. Examples of the p-type impurity include elements such as Be, Mg, Ca, and _Canyon in addition to Si. Examples of the thickness of the second type 2 cladding layer 36 include a thickness in the range of 0.4 to 1 [μm].

  The second active layer 37 is provided on each of the second type 2 cladding layers 36. The second active layer 37 functions as a light emitting layer that mainly emits visible light emitted from the second light emitting unit 30b. The second active layer 37 can emit light having a desired wavelength by controlling the composition and thickness of the band gap structure. The second active layer 37 is provided in a rectangular shape in plan view.

  The second active layer 37 of this embodiment functions as an intrinsic semiconductor in the second light emitting unit 30b. The second active layer 37 is made of AlGaInP and is hardly doped with impurities. Examples of the thickness of the second active layer 37 include a thickness in the range of 0.3 to 1 [μm].

  The second type 1 cladding layer 38 is provided on each of the second active layers 37. The second one-type cladding layer 38 is provided in a rectangular shape in plan view.

The second one-type cladding layer 38 of the present embodiment functions as an n-type semiconductor in the second light emitting unit 30b. The second one-type cladding layer 38 is made of AlInP and doped with, for example, Si that is an n-type impurity. As this doping concentration, the range of 1 * 10 < ¹⁷ > -1 * 10 < ¹⁹ > [atom / cm < ³ >] is mentioned, for example. Examples of the n-type impurity include elements of Group IV and Group VI such as Ge, Se, and Te in addition to Si. Examples of the thickness of the second one-type cladding layer 38 include a thickness in the range of 0.4 to 1 [μm].

  The second type 1 current diffusion layer 39 is provided on each of the second type 1 cladding layers 38. The second type 1 current diffusion layer 39 has a function of diffusing the current flowing through the second light emitting unit 30b in a wide area. The second type 1 current diffusion layer 39 is provided in a rectangular shape in plan view.

The second type 1 current diffusion layer 39 of the present embodiment functions as an n-type semiconductor. The second type 1 current diffusion layer 39 is made of GaAs and doped with, for example, Si that is an n-type impurity. As this doping concentration, the range of 1 * 10 < ¹⁷ > -1 * 10 < ¹⁹ > [atom / cm < ³ >] is mentioned, for example. Examples of the n-type impurity include elements of Group IV and Group VI such as Ge, Se, and Te in addition to Si.

  A one-type contact layer 391 is provided on each of the second one-type current diffusion layers 39. The one-type contact layer 391 contributes to reducing the contact resistance when the one-type current diffusion layer 39 and the electrode 40 are connected.

  The electrode layer 40 includes a first electrode 41, a second electrode 42, and a third electrode 43. The electrode layer 40 functions as a transmission path for the current flowing through the first light emitting unit 30a and the second light emitting unit 30b when current is passed through the first light emitting unit 30a and the second light emitting unit 30b to emit light. doing.

  The first electrode 41 is electrically connected to the type 2 current spreading layer 35 via the type 2 contact layer 351. The first electrode 41 is connected to a portion of the upper surface of the two-type current diffusion layer 35 that extends from below the second two-type cladding layer 36 to the periphery. In the present embodiment, one first electrode 41 is common to the plurality of light emitting layers 30 arranged in the first directions D1 and D2 among the plurality of light emitting elements 30 arranged in a lattice pattern. It is connected to the.

  The second electrode 42 is electrically connected to the first type 1 current diffusion layer 31. The second electrode 42 is connected to a portion of the upper surface of the first type 1 current diffusion layer 31 that extends from below the first type 1 cladding layer 32 to the periphery. In the present embodiment, one second electrode 42 is common to the plurality of light emitting layers 30 arranged in the second directions D3 and D4 among the plurality of light emitting elements 30 arranged in a lattice pattern. It is connected to the.

  The third electrode 43 is electrically connected to the second one-type current spreading layer 39 via the one-type contact layer 391. In the present embodiment, one third electrode 43 is common to the plurality of light emitting layers 30 arranged in the second directions D3 and D4 among the plurality of light emitting elements 30 arranged in a lattice pattern. It is connected to the.

  In the present embodiment, the first light emitting unit 30a applies a voltage in the forward direction between the first electrode 41 and the second electrode 42, whereby a current is supplied to the first light emitting unit 30a. The first active layer 33 emits light. The second light emitting unit 30b applies a voltage in the forward direction between the first electrode 41 and the third electrode 43, whereby a current is supplied to the second light emitting unit 30b, and the second light emitting unit 30b The active layer 37 emits light.

  The light emitting element 30 of the present embodiment includes the two-type current diffusion layer 35 commonly connected to the first light emitting unit 30a and the second light emitting unit 30b. The number of layers can be reduced to increase productivity. In addition, the electrode layer 40 can be simplified by reducing the number of transmission paths through which current flows through the first light emitting unit 30a and the second light emitting unit 30b. By simplifying the electrode layer 40 in this way, the light emitting elements 30 can be arranged at a narrow interval, or the ratio of the area of the light emitting elements 30 to the upper surface 20a of the support base 20 can be increased. It becomes like this.

  The protective layer 50 has a function of electrically connecting a desired layer of the light emitting element 30 and the electrode layer 40. The protective layer 50 is formed so as to cover the plurality of light emitting elements 30. Further, the protective layer 50 has a function of electrically insulating the first electrode 41, the second electrode 42, and the third electrode 43 from each other. The protective layer 50 is provided between two intersecting electrodes when the first electrode 41, the second electrode 42, and the third electrode 43 intersect. Thus, the protective layer 50 can be provided between the two electrodes by forming the protective layer 50 after the formation of the lower electrode. The protective layer 50 is omitted in FIG.

  The protective layer 50 has a plurality of through holes 50a. The through hole 50 a is provided on a portion of the upper surface of the two-type current diffusion layer 35 that extends from below the second two-type cladding layer 36 to the periphery. The first electrode 41 is connected to the two-type current diffusion layer 35 through a through hole 50 a provided on the upper surface of the two-type current diffusion layer 35. Further, the through hole 50 a is provided on a portion of the upper surface of the first type 1 current diffusion layer 31 that extends from below the first type 1 cladding layer 32 to the periphery. The second electrode 42 is connected to the first type I current spreading layer 31 through a through hole 50 a provided on the upper surface of the first type I current spreading layer 31. The through hole 50 a is provided on the one-type contact layer 391. The third electrode 43 is connected to the one-type contact layer 391 through a through hole 50 a provided on the upper surface of the one-type contact layer 391.

  The drive circuit 60 has a function of controlling driving of the first light emitting unit 30 a and the second light emitting unit 30 b of the light emitting layer 30. That is, the drive circuit 60 controls the current flowing through the first light emitting unit 30a and the second light emitting unit 30b to control the light emitting layer 30 to emit light. The drive circuit 60 is connected to the first electrode 41, the second electrode 42, and the third electrode 43.

  The first electrode 41 of the present embodiment is connected to a voltage source as a power source via the inside of the drive circuit 60. In addition, the second electrode 42 and the third electrode 43 are connected to a reference potential point serving as a reference potential of the power supply via an internal circuit of the drive circuit 60. The circuit between the second electrode 42 and the third electrode 43 and the reference potential point is provided with a switch that is individually controlled, and is built in the drive circuit 60. That is, the drive circuit 60 controls the light emission of the light emitting element 30 by controlling the switch.

  The drive circuit 60 of the present embodiment is configured to preferentially emit light that is not emitted by the second light emitting unit 30b provided above among the plurality of first light emitting units 30a. . Therefore, in the light emitting element array 10, in the plurality of light emitting elements 30, the heat distribution generated between the light emitting element and the one not emitting light can be reduced. Therefore, in this light emitting element array 10, it is possible to reduce the occurrence of frequency fluctuations in the light emitted from the first light emitting unit 30a and the second light emitting unit 30b due to heat.

  In addition, the drive circuit 60 of the present embodiment is configured to preferentially emit light that is not emitted from the second light emitting unit 30b provided above among the plurality of first light emitting units 30a. Therefore, it is possible to reduce the excessive current flowing through the first electrode 41 commonly connected to the first light emitting unit 30a and the second light emitting unit 30b. Therefore, in the light emitting element array 10, occurrence of disconnection of the first electrode 41 can be reduced, and the first electrode 41 can be thinned or thinned.

  In order to control the drive circuit 60 so as to preferentially emit light that is not emitted from the second light emitting unit 30b provided above among the plurality of first light emitting units 30a, This can be realized by selecting any one of the light emitting elements 30 that do not drive the light emitting unit 30b and controlling the switch of the second electrode 42 connected to the selected light emitting element 30. When all the first light emitting units 30a are caused to emit light, any one of the second light emitting units 30b is selected to emit light.

  The drive circuit 60 of the present embodiment sets the light emission time of the first light emitting unit 30a and the second light emitting unit 30b provided on the first light emitting unit 30a for each group, that is, for each heating element 30. The first light emitting unit 30a of the set having a short light emission time is configured to emit light preferentially. Therefore, in this light emitting element array 10, in the plurality of light emitting elements 30, the heat distribution generated between the light emitting element and the light emitting element 30 that is not emitting light can be further reduced. Therefore, in the light emitting element array 10, it is possible to further reduce the occurrence of frequency fluctuations in the light emitted from the first light emitting unit 30a and the second light emitting unit 30b due to heat.

  In order to control the driving circuit 60 so as to preferentially emit the first light emitting units 30a having a short light emitting time, the light emitting times of the respective light emitting elements 30 are counted in advance, and the second light emitting units 30b. When the first light emitting unit 30a to be driven is selected from the light emitting elements 30 that do not drive the light emitting element 30, the light emitting element 30 having a short light emitting time can be used to emit light. The light emission time can be counted by, for example, counting the number of outputs using a counter or the like when digitally controlling the light emission. Note that the weight may be changed in calculating the light emission time. As such weighting, for example, from the viewpoint of heat dissipation, the weighting may be changed between the first light emitting unit 30a and the second light emitting unit 30b, or the weighting may be changed depending on the position of each light emitting element 30. Also good. Further, the light emission time may be reduced by a certain value so as not to overflow, or may be cleared when the device is not driven for a long time.

  The light emitting element array 10 of the present embodiment includes a support substrate 20, a first light emitting unit 30a that emits infrared light, and a first light emitting unit 30a provided on the upper surface 20a of the support substrate 20. A second light emitting unit 30b that emits visible light and a drive circuit 60 that controls driving of the first light emitting unit 30a and the second light emitting unit 30b are provided. For this reason, in the light emitting element array 10, the first light emitting unit 30 a and the second light emitting unit 30 b are provided so as to be miniaturized.

  In the light emitting element array 10 of the present embodiment, the second light emitting unit 30b provided on the first light emitting unit 30a is configured to transmit light emitted from the first light emitting unit 30a. The region where the first light emitting unit 30a extends from below the second light emitting unit 30b can be narrowed. Therefore, the light emitting element array 10 can be further downsized.

  In the light emitting element array 10 of the present embodiment, the first light emitting unit 30a is configured such that the first light emitting unit 30a emits infrared light having a longer wavelength than the light emitted by the second light emitting unit 30b. This is suitable for controlling the configuration of the band gap so that the light emitted from 30a is transmitted through the second light emitting unit 30b.

  A plurality of second light emitting units 30b of the present embodiment are provided. Therefore, the light emitting element array 10 can display not only whether or not infrared light is emitted, but also information related to the emitted infrared light.

  Moreover, in this light emitting element array 10, since heat distribution is controlled in the light emission position of the infrared light (invisible light) which the 1st light emission part 30a emits, the character displayed with visible light, The occurrence of errors in symbols can be reduced.

  A plurality of first light emitting units 30a of the present embodiment are provided. Therefore, in this light emitting element array 10, it is possible to disperse the light emitting portions that emit infrared light and to reduce the concentration of the load on some of the light emitting portions.

  The light emitted from the plurality of first light emitting units of the present embodiment is used for infrared communication. Therefore, in the light emitting element array 10, information related to the signal being communicated can be displayed on the second light emitting unit 30b. In other words, the light emitting element array 10 can provide a small light emitting element component that operates in combination with communication and light.

<Second Embodiment of Light-Emitting Element>
Hereinafter, a light emitting element array as a second embodiment of the light emitting element component according to the present invention will be described with reference to the drawings.

  The light emitting element array 10A shown in FIGS. 3 and 4 includes a light emitting element 30A instead of the light emitting element 30, an electrode layer 40A instead of the electrode layer 40, a protective layer 50A instead of the protective layer 50, and the drive circuit 60. Instead, it differs from the light emitting element array 10 in that it includes a drive circuit 60A. In addition, the content common to 10 A of light emitting element arrays and the light emitting element array 10 including these different components is abbreviate | omitting description.

In the light emitting element 30A, the first type 1 current spreading layer 31A, the first type 1 cladding layer 32A, the first active layer 33A, the first type 2 cladding layer 34A, and the type 2 current spreading layer 35A. And a second type 2 clad layer 36, a second active layer 37, a second type 1 clad layer 38, and a second type 1 current spreading layer 39 are laminated.

  A plurality of first type 1 current spreading layers 31 </ b> A are provided on the main surface 20 a of the support substrate 20. The first type 1 current spreading layer 31A is provided so as to extend long in the first directions D1 and D2, and is arranged in the second directions D3 and D4.

  The first one-type cladding layer 32A is provided on each of the first one-type current diffusion layers 31A. The first one-type cladding layer 32A is configured to have an area smaller than that of the first one-type current diffusion layer 31A. That is, the first type 1 current diffusion layer 31A is provided so as to spread from below the first type 1 cladding layer 32A.

  A first active layer 33A is provided on each of the first one-type cladding layers 32A. A first two-type cladding layer 34A is provided on each of the first active layers 33A. A two-type current diffusion layer 35A is provided on each of the first two-type cladding layers 34A. A two-type contact layer 351A is provided on each of the two-type current diffusion layers 35A.

  A plurality of second type 2 cladding layers 36 are provided on one type 2 contact layer 351A. In this embodiment, a plurality of second type cladding layers 36 are arranged along the first directions D1 and D2 on one type 2 contact layer 351A. In the present embodiment, the second two-type cladding layers 36A are arranged in an orthogonal lattice pattern along the first direction D1, D2 and the second direction D3, D4. That is, in the present embodiment, a plurality of second light emitting units 30b are provided on one first light emitting unit 30Aa.

  A second active layer 37 is provided on each of the second type 2 cladding layers 36. A second type 1 cladding layer 38 is provided on each of the second active layers 37. A second type 1 current spreading layer 39 is provided on each of the type 1 cladding layers 38. A one-type contact layer 391 is provided on each of the second one-type current diffusion layers 39.

  The electrode layer 40A includes a first electrode 41A, a second electrode 42A, and a third electrode 43A.

First electrode 41A is electrically connected to dimorphic current spreading layer 35 A through the second die contact layer 351A. The first electrode 41A is connected to a portion of the upper surface of the two-type current diffusion layer 35A that extends from below the second two-type cladding layer 36A. In this embodiment, they are arranged in the second directions D3 and D4. One first electrode 41 </ b> A is commonly connected on the two-type contact layer 351.

  The second electrode 42A is electrically connected to the first type 1 current diffusion layer 31A. The second electrode 42A is connected to a portion of the upper surface of the first type 1 current diffusion layer 31A that extends from below the first type 1 clad layer 32A. In this embodiment, they are arranged in the second directions D3 and D4. One second electrode 42A is connected in common on the first type 1 current spreading layer 31A.

  The third electrode 43A is electrically connected to the second one-type current spreading layer 39 via the one-type contact layer 391. In the present embodiment, one third electrode is provided for the plurality of second light emitting units 30b arranged in the second directions D3 and D4 among the plurality of light emitting elements 30 arranged in a lattice pattern. 43A is connected in common.

  In the light emitting element 30A of the present embodiment, since the plurality of second light emitting parts 30b are provided on the first light emitting part 30Aa, the formation process of the light emitting element 30 is simplified and the productivity is increased. Can do. In addition, the electrode layer 40A can be simplified by reducing the number of transmission paths through which current flows through the first light emitting unit 30Aa.

  The protective layer 50 </ b> A is formed so as to cover the plurality of light emitting elements 30. The protective layer 50 is omitted in FIG. The protective layer 50A has a plurality of through holes 50Aa. The through hole 50Aa is provided on a portion of the upper surface of the two-type current diffusion layer 35A that extends from below the second two-type cladding layer 36 to the periphery. The first electrode 41A is connected to the two-type current diffusion layer 35A via a through hole 50Aa provided on the upper surface of the two-type current diffusion layer 35A. The through hole 50Aa is provided on a portion of the upper surface of the first type 1 current diffusion layer 31A that extends from below the first type 1 cladding layer 32A to the periphery. The second electrode 42A is connected to the first type I current spreading layer 31A via a through hole 50Aa provided on the upper surface of the first type I current spreading layer 31A. The through hole 50Aa is provided on the one-type contact layer 391. The third electrode 43A is connected to the one-type contact layer 391 through a through hole 50Aa provided on the upper surface of the one-type contact layer 391.

  The drive circuit 60A has a function of controlling driving of the first light emitting unit 30Aa and the second light emitting unit 30b of the light emitting layer 30A. That is, the drive circuit 60A controls the current flowing through the first light emitting unit 30Aa and the second light emitting unit 30b to control the light emitting layer 30A to emit light. The drive circuit 60A is connected to the first electrode 41A, the second electrode 42A, and the third electrode 43A.

  The drive circuit 60 </ b> A of the present embodiment preferentially emits light emitted from the plurality of first light emitting units 30 </ b> Aa with a small number of light emitted from the plurality of second light emitting units 30 b provided above. It is configured. Therefore, in this light emitting element array 10A, in the plurality of light emitting elements 30A, the heat distribution generated between the light emitting element and the light emitting element that does not emit light can be further reduced. Therefore, in this light emitting element array 10A, it is possible to further reduce the occurrence of frequency fluctuations in the light emitted from the first light emitting unit 30Aa and the second light emitting unit 30b due to heat.

<Image device>
Hereinafter, an embodiment of an image device according to the present invention will be exemplified and described with reference to the drawings.

The image device 1 illustrated in FIG. 5 includes the above-described light emitting element array 10 and a housing 70. In the present embodiment, the light emitting element array 10 is employed as the light emitting element component, but the light emitting element array 10A may be employed.

  The housing 70 has a function of holding the light emitting element array 10. The housing 70 includes a first housing 71 and a second housing 72. The first housing 71 has a function of supporting the light emitting element array 10. The light emitting element array 10 is placed on the upper surface of the first casing 71. The second housing 71 is provided so as to cover the light emitting element array 10 in pairs with the first housing 71. The second casing 71 has a function of transmitting light emitted from the light emitting elements 30 of the light emitting element array 10. The second casing 71 of the present embodiment is entirely formed of a material that transmits light emitted from the light emitting element 30. Note that the second casing 71 may be configured such that only a part thereof transmits light emitted from the light emitting element 30.

  The image device 1 of the present embodiment includes a light emitting element array 10 and can enjoy the effects of the light emitting element array 10. The image device 1 of the present embodiment can provide an image device having a small light intensity distribution.

  While specific embodiments of the present invention have been described above, the present invention is not limited to these embodiments, and various modifications can be made without departing from the spirit of the invention.

  The light emitting element 30 described in the present embodiment is configured such that the first light emitting unit 30a emits infrared light, but may be configured to emit ultraviolet light. For example, gallium nitride (GaN) is used as a material for forming the first active layer, and the band gap configuration is controlled in order to emit ultraviolet light in the first light emitting unit 30a.

In the light emitting element 30 described in the present embodiment, the two-type current diffusion layer 35 is commonly connected to the first light emitting unit 30a and the second light emitting unit 30b, but is limited to such a configuration. Absent. For example, an insulating layer 352B is formed between the first light emitting unit 30a and the second light emitting unit 30b, and the first light emitting unit 30a and the second light emitting unit 30b are different type current diffusion layers 35B ₁ , 35B ₂ may be connected.

  The light emitting element 30 described in the present embodiment may include a DBR layer. The “DBR” is an abbreviation for Distributed Bragg. Reflector. The DBR layer has a function of reflecting light emitted from the first light emitting unit 30a and the second light emitting unit 30b. The DBR layer is formed at a position between the first type 1 current diffusion layer 31 and the first type 1 cladding layer 32 and between the type 2 contact layer 351 and the second type 2 cladding layer 36. Is mentioned. This DBR layer may be formed in both of these positions, or may be formed in only one of them. Note that when the DBR layer is formed between the type 2 contact layer 351 and the second type 2 cladding layer 36, the light emitting characteristic of the second light emitting unit 30b is reflected, and the first light emitting unit 30a. It is designed to achieve both the characteristics of transmitting light emitted from the.

  The light emitting element 30 described in the present embodiment may include an etch buffer layer. This etch buffer layer has a function of buffering etching of the other light emitting part when forming one light emitting part when forming the first light emitting part 30a and the second light emitting part 30b. ing. The etch buffer layer is formed at a position between the first type 1 current diffusion layer 31 and the first type 1 cladding layer 32 and between the type 2 contact layer 351 and the second type 2 cladding layer 36. There is an interval. This etch buffer layer may be formed in both of these positions, or may be formed in only one of them.

DESCRIPTION OF SYMBOLS 1 ... Image apparatus 10 ... Light emitting module 20 ... Support base 30 ... Light emitting element 30a ... 1st light emission part 30b ... 2nd light emission part 31 ... 1st one Type current spreading layer 32... First type cladding layer 33... First active layer 34... First type 2 cladding layer 35 .. type 2 current spreading layer 351. Contact layer 352... Insulating layer 36... Second type 2 cladding layer 37... Second active layer 38... Second type 1 cladding layer 39. Layer 391 ... One-type contact layer 40 ... Electrode layer 41 ... First electrode 42 ... Second electrode 43 ... Third electrode 50 ... Protective layer 50a ... Through Hole 60 ... Drive circuit 70 ... Case 71 ... First casing 72 ... Second casing

Claims (5)

A support substrate;
A plurality of first light emitting portions that emit invisible light, provided on the upper surface of the support substrate;
A plurality of second light emitting units that are provided on each of the first light emitting units and emit visible light;
A drive circuit that controls driving of the plurality of first light emitting units and the plurality of second light emitting units,
The drive circuit is configured to cause any one of the plurality of second light emitting units to emit light when all of the plurality of first light emitting units emit light. Among these, when there is one in which the second light emitting unit provided above does not emit light, the second light emitting unit provided above emits light from the first light emitting unit. A light emitting device component configured to cause A plurality of the second light emitting units are provided on the first light emitting unit,
The drive circuit is configured to emit light of a small number of the plurality of second light emitting units provided above among the plurality of first light emitting units. Item 2. A light emitting device component according to Item 1. The drive circuit calculates the light emission time of the first light-emitting unit and the second light-emitting unit provided on the first light-emitting unit for each set, and the set having a short light emission time. the first light-emitting portion is configured to emit light, the light emitting device component according to claim 1 or 2.   The light emitting element component according to claim 1, wherein the plurality of first light emitting units are used for infrared communication.   A light emitting device comprising: the light emitting element component according to claim 1; and a housing that supports the light emitting element.

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