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JP5492105B2 - Sample preparation equipment - Google Patents

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JP5492105B2
JP5492105B2 JP2011015352A JP2011015352A JP5492105B2 JP 5492105 B2 JP5492105 B2 JP 5492105B2 JP 2011015352 A JP2011015352 A JP 2011015352A JP 2011015352 A JP2011015352 A JP 2011015352A JP 5492105 B2 JP5492105 B2 JP 5492105B2
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sample
shielding plate
ion beam
support member
stage
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JP2012154846A (en
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亨 河西
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Jeol Ltd
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Description

本発明は、走査電子顕微鏡や透過電子顕微鏡などで観察される試料を作製するための試料作製装置に関する。   The present invention relates to a sample preparation apparatus for preparing a sample observed with a scanning electron microscope or a transmission electron microscope.

走査電子顕微鏡(SEM)や透過電子顕微鏡(TEM)で観察される試料を作製する装置として、例えば、特許文献1に記載されているようなイオンビームを用いた試料作製装置が知られている。   As an apparatus for preparing a sample observed with a scanning electron microscope (SEM) or a transmission electron microscope (TEM), for example, a sample preparation apparatus using an ion beam as described in Patent Document 1 is known.

この試料作製装置は、図4に示すように、イオンビーム源より発せられたイオンビームIBを試料101に照射させてエッチングを行い、SEMまたはTEMによる観察に適した試料断面を作製する装置である。この試料作製装置においては、直線状の側縁部(エッジ部)を有する遮蔽板102が試料101上に配置され、この遮蔽板102のエッジ部から露出した試料をイオンビームIBによってエッチングすることにより、試料101が加工されるように構成されている。試料101の遮蔽板から露出した部分がイオンビームにより削り取られるため、遮蔽板102の直線状のエッジ部に沿って、平坦な試料断面が形成される。   As shown in FIG. 4, this sample preparation apparatus is an apparatus that performs etching by irradiating the sample 101 with an ion beam IB emitted from an ion beam source, and forms a sample cross section suitable for observation by SEM or TEM. . In this sample preparation apparatus, a shielding plate 102 having straight side edges (edge portions) is disposed on the sample 101, and the sample exposed from the edge portion of the shielding plate 102 is etched by the ion beam IB. The sample 101 is configured to be processed. Since the portion of the sample 101 exposed from the shielding plate is scraped off by the ion beam, a flat sample cross section is formed along the linear edge portion of the shielding plate 102.

このような試料作製装置を用いて作製された試料101は、SEMまたはTEMにセットされ、エッチングによって現れた断面に電子線が照射され、観察が行われる。   A sample 101 manufactured using such a sample manufacturing apparatus is set in an SEM or a TEM, and an electron beam is irradiated onto a cross section that appears by etching, and observation is performed.

特開2005−037164公報JP 2005-037164 A 特開2009−025243公報JP 2009-025243 A

前述の試料作製装置においては、遮蔽板102は、基端側を支持され先端側が自由端となされた支持部材103によって支持されている。そして、イオンビームIBは、遮蔽板102の支持部材103の先端側に向かうエッジ部に照射され、このエッジに沿って、試料101を加工する。   In the sample preparation apparatus described above, the shielding plate 102 is supported by the support member 103 that is supported on the base end side and has the distal end side as a free end. Then, the ion beam IB is applied to an edge portion of the shielding plate 102 toward the tip of the support member 103, and the sample 101 is processed along this edge.

このとき、この試料作製装置において、イオンビームIBの照射は数時間あるいはそれ以上の長時間にわたるため、遮蔽板102はイオンビームIBの照射を受けて加熱されて高温度となる。そしてその熱が支持部材103に伝達されて支持部材103も温度が上昇するため、支持部材103には熱膨張が発生する。支持部材103が熱膨張すると、遮蔽板102は、図4中矢印aで示すように基端側から遠ざかる方向に移動するため、イオンビームIBが照射されているエッジは、イオンビームIBに接近する方向(それまでにイオンビームが照射されていた領域を隠す方向)に徐々に移動されることとなる。   At this time, in this sample preparation apparatus, since the irradiation with the ion beam IB takes a long time of several hours or more, the shielding plate 102 is heated by receiving the irradiation with the ion beam IB and becomes a high temperature. Since the heat is transmitted to the support member 103 and the temperature of the support member 103 also rises, the support member 103 undergoes thermal expansion. When the support member 103 is thermally expanded, the shielding plate 102 moves in a direction away from the base end side as indicated by an arrow a in FIG. 4, so that the edge irradiated with the ion beam IB approaches the ion beam IB. It is gradually moved in the direction (the direction in which the region where the ion beam has been irradiated so far is hidden).

遮蔽板102がこのように移動すると、試料101において、当初エッチングされていた領域が遮蔽板102によって覆われてエッチングされなくなる。そのため、ナイフで切ったような良好な試料断面が現れなくなり、良好な断面試料が作製できなくなるという問題があった。   When the shielding plate 102 moves in this manner, the region that was originally etched in the sample 101 is covered with the shielding plate 102 and is not etched. For this reason, there is a problem in that a good sample cross-section that has been cut with a knife does not appear and a good cross-sectional sample cannot be produced.

その対策として、特許文献2では、支持部材103の先端に折り返すように第2の支持部材を取り付け、この第2の支持部材の先端に遮蔽板を取り付けるようにした構造を提案している。この特許文献2の提案する構造においては、第2の支持部材の熱膨張率を支持部材103の熱膨張率よりも大きくすることにより、支持部材103の熱膨張による遮蔽板の移動を、第2の支持部材の熱膨張により打ち消し遮蔽板の移動を防止することができる。   As a countermeasure, Patent Document 2 proposes a structure in which a second support member is attached so as to be folded back at the tip of the support member 103 and a shielding plate is attached to the tip of the second support member. In the structure proposed in Patent Document 2, the movement of the shielding plate due to the thermal expansion of the support member 103 is prevented by making the thermal expansion coefficient of the second support member larger than the thermal expansion coefficient of the support member 103. The movement of the canceling shielding plate can be prevented by the thermal expansion of the support member.

ところが、このような提案構造では、構造が複雑になることは避けられず、また熱膨張率を考慮した素材選びが必要となり、設計の自由度が狭くなるという問題がある。   However, in such a proposed structure, it is inevitable that the structure is complicated, and it is necessary to select a material in consideration of the coefficient of thermal expansion, and there is a problem that the degree of freedom in design becomes narrow.

本発明は、前述の実情に鑑みて提案されるものであり、その目的は、簡単な構造で、従来装置及び提案装置が持つ問題点を解決することのできる試料作製装置を提供することにある。   The present invention is proposed in view of the above-described circumstances, and an object of the present invention is to provide a sample preparation apparatus that can solve the problems of the conventional apparatus and the proposed apparatus with a simple structure. .

前述の課題を解決し上記目的を達成するため、本発明の試料作製装置は、遮蔽板を試料の一部が露出しその他が遮蔽されるように配置し、遮蔽板と試料の露出部分に跨るようにイオンビームを試料に照射することにより、試料の露出部分をエッチングして試料断面を作製する試料作製装置であって、遮蔽板ステージと、前記遮蔽板ステージにより基端部を支持され、先端側が自由端となされた支持部材と、前記支持部材の先端側に支持された遮蔽板とを備え、前記支持部材は、前記遮蔽板の前記支持部材の基端側に向かう一側縁が前記イオンビームの照射位置となるように該遮蔽板を保持し、この遮蔽板により前記イオンビームが遮蔽される位置に設置された前記試料の該遮蔽板の一側縁から露出した箇所への前記イオンビームによる加工を行わせると共に、前記試料断面を前記遮蔽板ステージ側から観察するために前記試料断面からの光を受光する受光手段を前記遮蔽板ステージを挟んで前記試料断面と反対側に配置し、前記受光手段に前記試料断面からの光が入射する光路となる観察穴を前記遮蔽板ステージに設けたことを特徴とするものである。



In order to solve the above-described problems and achieve the above object, the sample preparation apparatus of the present invention arranges the shielding plate so that a part of the sample is exposed and the other is shielded, and straddles the shielding plate and the exposed part of the sample. In this way, a sample preparation apparatus for producing a cross section of a sample by etching an exposed portion of the sample by irradiating the sample with an ion beam, the base end portion being supported by the shielding plate stage and the shielding plate stage, A support member having a free end on the side, and a shielding plate supported on a distal end side of the support member, wherein the support member has a side edge toward the base end side of the support member of the shielding plate. The ion beam to a portion exposed from one side edge of the shielding plate of the sample installed at a position where the ion beam is shielded by the shielding plate by holding the shielding plate so as to be a beam irradiation position. Processing by And a light receiving means for receiving light from the sample cross section for observing the sample cross section from the shielding plate stage side is disposed on the opposite side of the sample cross section across the shielding plate stage, and the light receiving means Further, an observation hole serving as an optical path through which light from the cross section of the sample enters is provided in the shielding plate stage.



本発明に係る試料作製装置においては、遮蔽板ステージに基端部を支持され、先端側が自由端となされた支持部材の先端側に遮蔽板を支持するとともに、前記遮蔽板の前記支持部材の基端側に向かう一側縁が前記イオンビームの照射位置となるように該遮蔽板を保持し、この遮蔽板により前記イオンビームが遮蔽される位置に設置された前記試料の該遮蔽板の一側縁から露出した箇所への前記イオンビームによる加工を行わせる。   In the sample preparation apparatus according to the present invention, the base end is supported by the shielding plate stage, the shielding plate is supported on the distal end side of the support member whose distal end is a free end, and the base of the support member of the shielding plate is supported. The shielding plate is held so that one side edge toward the end side is the irradiation position of the ion beam, and one side of the shielding plate of the sample installed at a position where the ion beam is shielded by the shielding plate Processing with the ion beam is performed on a portion exposed from the edge.

そのため、この試料作製装置においては、イオンビームの照射による遮蔽板の発熱を受けて支持部材が加熱されて熱膨張を生じ、遮蔽板が移動しても、前記遮蔽板の前記支持部材の基端側に向かう一側縁にイオンビームが照射されているため、遮蔽板は、イオンビームから離れる方向に移動されることになる。   Therefore, in this sample preparation device, the support member is heated by receiving heat generated by the irradiation of the ion beam to cause thermal expansion, and even if the shield plate moves, the base end of the support member of the shield plate Since the ion beam is radiated to one side edge toward the side, the shielding plate is moved away from the ion beam.

したがって、この試料作製装置においては、イオンビームによる試料の加工中において、当初加工されていた領域が加工されなくなるようなことが発生せず、良好な断面が現れた試料が作製できる。   Therefore, in this sample preparation apparatus, during processing of the sample by the ion beam, the region that was originally processed does not become unprocessed, and a sample with a good cross section can be manufactured.

本発明に係る試料作製装置の構成を示す断面図である。It is sectional drawing which shows the structure of the sample preparation apparatus which concerns on this invention. 図1における遮蔽板ステージ9と遮蔽板8と試料6との関係を説明するための平面図および断面図である。It is the top view and sectional drawing for demonstrating the relationship between the shielding board stage 9, the shielding board 8, and the sample 6 in FIG. 支持部材22,22による遮蔽板8の支持構造を説明するための分解図である。It is an exploded view for demonstrating the support structure of the shielding board 8 by the supporting members 22 and 22. FIG. 従来の試料作製装置の構成を示す図である。It is a figure which shows the structure of the conventional sample preparation apparatus.

以下、図面を参照しながら本発明の最良の実施の形態について説明する。図1は、本発明に係る試料作製装置の構成を示す断面図である。図1において、1は真空容器であり、排気口2を介して図示しない真空ポンプによって排気され、内部空間が真空に維持される。3は真空容器1内に収納されるL字型の回転傾斜台で、大気側から真空容器1の隔壁を貫通して内部に導入される回転軸4の一端に取り付けられており、大気側で回転軸4の他端に接続されたモータ5により往復回転される。   The best mode for carrying out the present invention will be described below with reference to the drawings. FIG. 1 is a cross-sectional view showing a configuration of a sample preparation apparatus according to the present invention. In FIG. 1, reference numeral 1 denotes a vacuum vessel, which is evacuated by a vacuum pump (not shown) through an exhaust port 2, and the internal space is maintained in a vacuum. Reference numeral 3 denotes an L-shaped rotary tilting table accommodated in the vacuum vessel 1, which is attached to one end of a rotary shaft 4 that penetrates the partition wall of the vacuum vessel 1 from the atmosphere side and is introduced into the inside. It is reciprocally rotated by a motor 5 connected to the other end of the rotating shaft 4.

前記回転傾斜台3には、試料6を保持し移動させる試料ステージ7が載置される。この試料ステージ7は試料を載せる台座を備えると共に、遮蔽板8を保持し、遮蔽板8を試料の一部が露出しその他が遮蔽されるように試料5の上に重ねるための遮蔽板ステージ9が取り付けられている。   A sample stage 7 that holds and moves the sample 6 is placed on the rotary tilt table 3. The sample stage 7 includes a pedestal on which a sample is placed, holds a shielding plate 8, and a shielding plate stage 9 for overlapping the shielding plate 8 on the sample 5 so that a part of the sample is exposed and the others are shielded. Is attached.

真空容器1の上部には、イオン銃10が取り付けられている。このイオン銃としては、ガスイオン銃を用いることができ、例えば、Arガスを放電によりイオン化させてArイオンを発生させるガスイオン銃を用いることができる。このイオン銃10から発生する比較的大きな径を持つイオンビームIBは、前記試料6及びその上に重ねられた遮蔽板8にまたがって照射される。その結果、試料6の遮蔽板8から露出している部分がイオンビームにより削られて行き、遮蔽板8のエッジに沿った試料断面が形成されることになる。   An ion gun 10 is attached to the upper part of the vacuum vessel 1. As this ion gun, a gas ion gun can be used. For example, a gas ion gun that generates Ar ions by ionizing Ar gas by discharge can be used. The ion beam IB having a relatively large diameter generated from the ion gun 10 is irradiated across the sample 6 and the shielding plate 8 stacked thereon. As a result, the portion of the sample 6 exposed from the shielding plate 8 is scraped by the ion beam, and a sample cross section along the edge of the shielding plate 8 is formed.

前記回転軸4の回転中心0が、イオンビームIBによるその加工部分を通るように試料ステージ7上の試料の高さが設定されているため、イオンビームIBの試料6及び遮蔽板8への入射角度は、回転傾斜台3の往復回転に伴って繰り返し変化させられる。この入射角の繰り返し変化は、入射角度を変化させない場合に断面に発生するスジ状の凹凸を消す効果を与える。   Since the height of the sample on the sample stage 7 is set so that the rotation center 0 of the rotation shaft 4 passes through the processed portion by the ion beam IB, the ion beam IB is incident on the sample 6 and the shielding plate 8. The angle is repeatedly changed with the reciprocating rotation of the rotary tilt table 3. This repeated change in the incident angle gives an effect of eliminating streak-like irregularities generated in the cross section when the incident angle is not changed.

前記遮蔽板ステージ9には、イオンビームIBによる加工により形成される試料断面を、断面に対して垂直方向から観察するため、遮蔽板ステージ9内を前記回転中心0に沿って貫通するように穿たれた観察穴11が設けられている。前記真空容器1の観察穴11の延長方向の壁面には観察窓12が設けられ、この観察窓12及び観察穴11を介して試料断面を観察するためのCCDカメラなどの観察手段13が真空外に配置されている。14は、イオンビーム加工により発生した飛散物質が観察窓12に付着するのを防止するため、観察窓12の前面に配置されるガラス板であり、前記回転傾斜台3の端部に交換可能に取り付けられる。   The shielding plate stage 9 is perforated so as to penetrate the shielding plate stage 9 along the rotation center 0 in order to observe a sample cross section formed by processing with the ion beam IB from a direction perpendicular to the cross section. A sagging observation hole 11 is provided. An observation window 12 is provided on the wall surface in the extending direction of the observation hole 11 of the vacuum vessel 1, and an observation means 13 such as a CCD camera for observing a cross section of the sample through the observation window 12 and the observation hole 11 is outside the vacuum. Is arranged. Reference numeral 14 denotes a glass plate disposed in front of the observation window 12 in order to prevent scattered substances generated by the ion beam processing from adhering to the observation window 12, and can be exchanged for the end of the rotary tilt table 3. It is attached.

図2は、図1における遮蔽板ステージ9と遮蔽板8と試料6との関係を説明するための平面図(図2(a))および断面図(図2(b))である。両図において、遮蔽板ステージ9は、試料ステージ7に取り付けられた基台20と、この基台20に図中矢印Xで示す方向に移動可能に保持されるスライダー板21と、基端側をスライダー板21により支持され、先端側が自由端となされた一対の支持部材22,22を有している。これら支持部材22,22は、基端側が一体化されており、先端側を互いに平行として構成され、その先端側に差し渡すように長板状の遮蔽板8が取り付けられる。これら支持部材22,22は、スライダー板21上において、図中矢印Yで示す方向に移動可能に支持されている。従って、支持部材22,22は、試料ステージ7上でX,Yの2軸方向に移動可能となっている。   2 is a plan view (FIG. 2A) and a cross-sectional view (FIG. 2B) for explaining the relationship among the shielding plate stage 9, the shielding plate 8, and the sample 6 in FIG. In both figures, the shielding plate stage 9 includes a base 20 attached to the sample stage 7, a slider plate 21 held on the base 20 so as to be movable in the direction indicated by the arrow X, and a base end side. It has a pair of support members 22 and 22 supported by the slider plate 21 and having a free end at the front end side. These support members 22 and 22 are integrated on the base end side, and the front end sides are configured to be parallel to each other, and a long plate-like shielding plate 8 is attached so as to pass to the front end side. These support members 22 are supported on the slider plate 21 so as to be movable in the direction indicated by the arrow Y in the figure. Accordingly, the support members 22 and 22 are movable in the X and Y biaxial directions on the sample stage 7.

すなわち、支持部材22,22は、基端側を第1のリニアベアリング27を介して、スライダ板21に支持されている。このスライダ板21は、第1のリニアベアリング27に直交する第2のリニアベアリング28を介して、基台20により支持されている。そして、支持部材22,22の基端側には、基台20側に設けられた調整ピニオンギヤ23が噛合したラック部24が設けられている。調整ピニオンギヤ23が回転操作されることにより、支持部材22,22は、図中矢印Yで示す遮蔽板の長さ方向に移動操作される。   That is, the support members 22 and 22 are supported by the slider plate 21 on the base end side via the first linear bearing 27. The slider plate 21 is supported by the base 20 via a second linear bearing 28 orthogonal to the first linear bearing 27. And the rack part 24 which the adjustment pinion gear 23 provided in the base 20 side meshed | engaged is provided in the base end side of the supporting members 22 and 22. As shown in FIG. By rotating the adjustment pinion gear 23, the support members 22 and 22 are moved in the length direction of the shielding plate indicated by the arrow Y in the figure.

また、スライダ板21には、基台20に螺合された調整ネジ26の先端部が当接している。調整ネジ26が回転操作されることにより、支持部材22は、スライダ板21とともに、図中矢印Xで示す遮蔽板の長さ方向と直交する方向に移動操作される。なお、スライダ板21は、図示しない付勢部材により、調整ネジ26の先端部側に付勢されており、調整ネジ26の先端部から離間することが防止されている。   The slider plate 21 is in contact with the tip of an adjustment screw 26 screwed into the base 20. When the adjustment screw 26 is rotated, the support member 22 is moved and operated together with the slider plate 21 in a direction orthogonal to the length direction of the shielding plate indicated by the arrow X in the drawing. The slider plate 21 is urged toward the distal end portion of the adjustment screw 26 by an urging member (not shown), and is prevented from being separated from the distal end portion of the adjustment screw 26.

支持部材22,22の先端部には、これら支持部材22,22間に差し渡されるようにして、矩形状の遮蔽板8が取付けられている。この遮蔽板8は、支持部材22,22によって、イオンビームIBがほぼ90度で表面に入射するように支持されている。これら支持部材22,22は、遮蔽板8の支持部材22,22の基端側に向かう一側縁(エッジ部)8aを、イオンビームIBの中心照射位置として、遮蔽板8を保持する。この遮蔽板8とイオンビームIB(及び試料)との相対位置は、支持部材22,22を基台20上においてX,Y2軸方向に移動操作することによって調整される。   A rectangular shielding plate 8 is attached to the front ends of the support members 22 and 22 so as to be passed between the support members 22 and 22. The shielding plate 8 is supported by support members 22 and 22 so that the ion beam IB is incident on the surface at approximately 90 degrees. These support members 22 and 22 hold the shielding plate 8 with the one side edge (edge portion) 8a toward the base end side of the supporting members 22 and 22 of the shielding plate 8 as the center irradiation position of the ion beam IB. The relative position between the shielding plate 8 and the ion beam IB (and the sample) is adjusted by moving the support members 22 and 22 on the base 20 in the X and Y 2 axis directions.

そして、遮蔽板8によりイオンビームIBが遮蔽される位置には、試料6が設置される。この試料6は、試料ステージ7に設けられた台座上に載置されて、上面部を遮蔽板8によって覆われた状態に設置される。イオンビームIBは、遮蔽板8の一側縁8aを中心照射位置として遮蔽板8及び試料6の一側縁8aより露出した箇所にわたって照射され、このイオンビームIBにより試料の遮蔽板で遮蔽された部分の加工が防がれつつ露出した箇所に対する加工が行われる。   A sample 6 is placed at a position where the ion beam IB is shielded by the shielding plate 8. The sample 6 is placed on a pedestal provided on the sample stage 7 and is placed in a state where the upper surface portion is covered by the shielding plate 8. The ion beam IB is irradiated over the portion exposed from the one side edge 8a of the shielding plate 8 and the sample 6 with the one side edge 8a of the shielding plate 8 as a central irradiation position, and is shielded by the sample shielding plate by the ion beam IB. The exposed portion is processed while the processing of the portion is prevented.

図3は、支持部材22,22による遮蔽板8の支持構造を説明するための分解図である。図に示すように、支持部材22の先端部は薄肉化され、その部分に同じく薄肉化された遮蔽板8の端部が重ねられる。さらにその上に板ばね31と押さえ板32を重ねた上で、ビス33により押さえ板32が支持部材22に取り付けられる。   FIG. 3 is an exploded view for explaining the support structure of the shielding plate 8 by the support members 22 and 22. As shown in the drawing, the front end portion of the support member 22 is thinned, and the end portion of the thinned shielding plate 8 is overlapped on that portion. Furthermore, after the leaf spring 31 and the pressure plate 32 are stacked thereon, the pressure plate 32 is attached to the support member 22 with screws 33.

上記構成において、イオンビームIB加工が開始されると、イオンビームIBの照射によって加熱された遮蔽板8の熱が支持部材22,22に伝わって加熱される。それによる支持部材22,22の温度上昇により熱膨張が生ずると、遮蔽板8は、図2(b)中矢印Bで示す支持部材22,22の自由端側に向かう方向、すなわち、イオンビームIBに対して試料の露出部分が増加する方向に移動される。   In the above configuration, when the ion beam IB processing is started, the heat of the shielding plate 8 heated by the irradiation of the ion beam IB is transmitted to the support members 22 and 22 and heated. When thermal expansion occurs due to the temperature rise of the supporting members 22 and 22, the shielding plate 8 moves in the direction toward the free ends of the supporting members 22 and 22 indicated by the arrow B in FIG. 2B, that is, the ion beam IB. In contrast, the exposed portion of the sample is moved in the increasing direction.

したがって、この試料作製装置においては、イオンビームIBによる試料6の加工中において、イオンビームIBを遮断する遮蔽板8のイオンビームIBに対して試料の露出部分を減少させ、既に加工された部分を隠してしまう方向への移動が防止される。このため、試料6上の新たな箇所がイオンビームIBによって加工され、良好な断面が現れた試料を作製することができる。   Therefore, in this sample preparation apparatus, during the processing of the sample 6 by the ion beam IB, the exposed portion of the sample is reduced with respect to the ion beam IB of the shielding plate 8 that blocks the ion beam IB, and the already processed portion is reduced. Movement in the direction of hiding is prevented. For this reason, a new part on the sample 6 is processed by the ion beam IB, and a sample in which a good cross section appears can be manufactured.

このように、本発明では、図4に示される従来例に比べ、遮蔽板の反対側のエッジ(一側縁)を断面作製のために使用するという簡単な構造を採用することにより、遮蔽板を支持する支持部材が熱膨張しても、良好な断面が現れた試料を作製することができる。また、前述した提案装置に比べても、第2の支持部材が不要となるばかりでなく、熱膨張率を考慮した素材選びが不要になるという効果が得られる。   As described above, in the present invention, the shield plate is adopted by adopting a simple structure in which the opposite edge (one side edge) of the shield plate is used for cross-sectional preparation as compared with the conventional example shown in FIG. Even if the supporting member that supports is thermally expanded, a sample having a good cross section can be produced. Compared to the above-described proposed apparatus, not only the second support member is unnecessary, but also an effect that selection of a material in consideration of the thermal expansion coefficient is unnecessary.

加えて、この試料作製装置においては、遮蔽板ステージ9内(具体的にはスライダ板21内)を前記回転中心0に沿って貫通するように穿たれた観察穴11が設けられているので、CCDカメラや顕微鏡等により、加工中の試料6を観察することができる。   In addition, in this sample preparation apparatus, the observation hole 11 is provided so as to penetrate the shielding plate stage 9 (specifically, the slider plate 21) along the rotation center 0. The sample 6 being processed can be observed with a CCD camera or a microscope.

1:真空容器 6:試料 7:試料ステージ 8:遮蔽板 9:遮蔽板ステージ
10:イオン銃 11:観察穴 12:観察窓 13:観察手段 20:基台
21:スライダ板 22:支持部材 23:調整ピニオンギヤ 24:ラック部
27:第1のリニアベアリング 28:第2のリニアベアリング
1: Vacuum container 6: Sample 7: Sample stage 8: Shield plate 9: Shield plate stage 10: Ion gun 11: Observation hole 12: Observation window 13: Observation means 20: Base 21: Slider plate 22: Support member 23: Adjustment pinion gear 24: Rack portion 27: First linear bearing 28: Second linear bearing

Claims (1)

遮蔽板を試料の一部が露出しその他が遮蔽されるように配置し、遮蔽板と試料の露出部分に跨るようにイオンビームを試料に照射することにより、試料の露出部分をエッチングして試料断面を作製する試料作製装置であって、
遮蔽板ステージと、
前記遮蔽板ステージにより基端部を支持され、先端側が自由端となされた支持部材と、
前記支持部材の先端側に支持された遮蔽板と
を備え、
前記支持部材は、前記遮蔽板の前記支持部材の基端側に向かう一側縁が前記イオンビームの照射位置となるように該遮蔽板を保持し、
この遮蔽板により前記イオンビームが遮蔽される位置に設置された前記試料の該遮蔽板の一側縁から露出した箇所への前記イオンビームによる加工を行わせると共に、
前記試料断面を前記遮蔽板ステージ側から観察するために前記試料断面からの光を受光する受光手段を前記遮蔽板ステージを挟んで前記試料断面と反対側に配置し、
前記受光手段に前記試料断面からの光が入射する光路となる観察穴を前記遮蔽板ステージに設けたことを特徴とする試料作製装置。
The shielding plate is arranged so that a part of the sample is exposed and the others are shielded, and the sample is irradiated with an ion beam so as to straddle the shielding plate and the exposed part of the sample, thereby etching the exposed part of the sample. A sample production apparatus for producing a cross section,
A shielding stage,
A support member whose base end is supported by the shielding plate stage and whose front end is a free end;
A shielding plate supported on the front end side of the support member,
The support member holds the shielding plate so that one side edge of the shielding plate toward the base end side of the support member is an irradiation position of the ion beam,
While performing the processing with the ion beam to a portion exposed from one side edge of the shielding plate of the sample installed at a position where the ion beam is shielded by the shielding plate ,
In order to observe the sample cross section from the shielding plate stage side, a light receiving means for receiving light from the sample cross section is disposed on the opposite side of the sample cross section across the shielding plate stage,
A sample preparation apparatus , wherein an observation hole serving as an optical path through which light from the sample cross section enters the light receiving means is provided in the shielding plate stage .
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