JP5487981B2 - Exposure method and apparatus, and device manufacturing method - Google Patents

Description

  The present invention relates to an exposure technique for exposing a substrate through a mask and a projection optical system, and is suitable for exposing a long sheet-like photosensitive object wound in a roll shape, for example. Furthermore, the present invention relates to a device manufacturing technique using such an exposure technique.

For example, in an exposure apparatus used when manufacturing a semiconductor element or a liquid crystal display element, a conventional general exposure object is a plate object having high rigidity such as a glass substrate or a semiconductor wafer coated with a photoresist. there were. Recently, in order to efficiently manufacture a device having a large area, a long sheet-like member having flexibility that can be stored in a roll shape is sometimes used as an exposure target. When exposing to such a long sheet-like member, as an example, conventionally, after partly exposing (static exposure) a part of the sheet-like member via a mask and a projection optical system, for example, the sheet-like member is exposed on an exposure table. After moving by suction, the operation of releasing the suction and returning only the exposure table to the original position is repeated, and the sheet-like member is intermittently moved from the supply roller to the take-up roller side. (For example, refer to Patent Document 1).
JP 2007-114385 A

In the conventional exposure method for the sheet-like member, since the batch exposure through the mask and the movement of the sheet-like member are alternately repeated, the exposure efficiency is low. For example, the sheet-like member wound around one roll is used. There was a problem that it took a long time to expose.
On the other hand, a method of scanning and exposing the sheet-like member while moving the mask and the sheet-like member synchronously is also conceivable. However, in simple scanning exposure, for example, if the sheet-like member is exposed in the forward path of the mask, it is difficult to expose the sheet-like member in the backward path of the mask. Therefore, the exposure efficiency is not so high.

  SUMMARY OF THE INVENTION In view of such circumstances, an object of the present invention is to provide an exposure technique and a device manufacturing technique that can efficiently perform exposure on a long sheet-like photosensitive object having flexibility, for example. .

  A first exposure method according to the present invention is an exposure method for exposing a substrate through a pattern provided on a mask, wherein the mask is reciprocated along a scanning direction, and the mask is being reciprocated during reciprocation. In one period, the first substrate is exposed through the first pattern of the patterns and the first projection optical system, and the first substrate is moved in synchronization with the movement of the mask, and the mask is reciprocated. During the second period, the second substrate is exposed to the second substrate through the second pattern and the second projection optical system, and the second substrate is moved in synchronization with the movement of the mask. .

  A second exposure method according to the present invention is an exposure method in which a substrate is exposed through a pattern provided on a mask, and the first exposure is performed through the first pattern and the first projection optical system. A step of synchronizing the movement of the mask in the first direction and the movement of the first substrate in the second direction while exposing the substrate, and the second pattern and the second projection optical system of the patterns And a step of synchronizing the movement of the mask in the direction opposite to the first direction and the movement of the second substrate in the third direction while exposing the second substrate via the step.

  An exposure apparatus according to the present invention is an exposure apparatus that exposes a substrate through a pattern provided on a mask, the mask stage holding the mask and reciprocating along the scanning direction, and the pattern A first projection optical system and a second projection optical system that project images of the first pattern and the second pattern on the first substrate and the second substrate, respectively, and a substrate that moves the first substrate and the second substrate, respectively. A moving mechanism, and a control device that drives the mask stage and the substrate moving mechanism synchronously are provided.

  The device manufacturing method according to the present invention includes a step of exposing a substrate using the exposure method or exposure apparatus of the present invention, and a step of processing the exposed substrate.

  According to the present invention, since the substrate can be exposed through the two projection optical systems during the reciprocating movement of the mask, when the substrate is, for example, a flexible sheet-like photosensitive object having flexibility, Exposure can be performed efficiently while moving the substrate continuously or intermittently in a predetermined direction.

[First Embodiment]
Hereinafter, a first embodiment of the present invention will be described with reference to FIGS.
FIG. 1 shows a schematic configuration of a scanning exposure apparatus (projection exposure apparatus) 1 of the present embodiment. In FIG. 1, an exposure apparatus 1 includes an exposure light source 2, an illumination apparatus IU that illuminates a part of the pattern of the mask M with illumination light IL (exposure light) from the exposure light source 2, and a reciprocating movement while holding the mask M. And a first projection optical system PLA and a second projection optical system PLB that project a partial image of the pattern of the mask M onto the plate P, respectively. For convenience of explanation, in FIG. 1, the mask M and the mask stage MST are represented by two-dot chain lines. The mask M is sucked and held on a region including the opening of the mask stage MST, and the mask stage MST is a mask base (non-mask) in which an opening through which illumination light passes is formed between the illumination device IU and the projection optical systems PLA and PLB. It is mounted so as to be movable.

  Further, the exposure apparatus 1 includes a plate moving device PDV that moves the plate P in a fixed direction continuously or intermittently, a drive mechanism (not shown) that includes a linear motor that drives the mask stage MST, and the exposure device 1. And a main control system 7 composed of a computer that controls the overall operation of the computer. The plate P of this embodiment is a long strip-like sheet-like member made of a synthetic resin that has flexibility for manufacturing a display element and the like and can be stored in a roll shape as an example. A photoresist (photosensitive material) is coated on the substrate.

That the plate P is sheet-shaped means that the thickness is sufficiently small (thin) compared to the size (area) of the plate P, and the plate P has flexibility.
In the following description, the positional relationship of each member will be described with reference to the XYZ orthogonal coordinate system set in FIG. The XYZ orthogonal coordinate system is set on a horizontal plane with the X axis and the Y axis, and the Z axis is set in the vertical direction. In the present embodiment, the pattern surface of the mask M is parallel to the XY plane, and the portion of the surface of the plate P irradiated with the illumination light IL during scanning exposure is also parallel to the XY plane. The reciprocating direction (scanning direction) of the mask M during scanning exposure is a direction parallel to the X axis (X direction).

  The plate P is first moved by the plate moving device PDV in the + X direction on the image plane side shifted in the −Y direction of the first projection optical system PLA, and then the direction is reversed by the U-turn roller unit 28. The image plane side shifted in the + Y direction of the second projection optical system PLB is moved in the −X direction. Therefore, the scanning direction of the exposed portion of the plate P that is scanned and exposed via the first projection optical system PLA is the + X direction, and the exposure target of the plate P that is scanned and exposed via the second projection optical system PLB. The scanning direction of the part is the -X direction.

  In FIG. 1, an exposure light source 2 includes an ultra-high pressure mercury lamp, an elliptical mirror, and a wavelength selection element. An illuminating device IU includes a light transmission optical system 3 including a light guide and the like, and six incident illumination lights IL. The optical system includes a branching optical system 4 that branches into a light beam and emits each light beam through an optical integrator, a relay optical system, a variable blind (variable field stop), and a condenser lens. Illumination light IL emitted from the exposure light source 2 and selected from a wavelength range including, for example, g-line (wavelength 436 nm), h-line (wavelength 405 nm), and i-line (wavelength 365 nm) Six illumination areas that are independently opened and closed by the variable blinds on the pattern surface of the mask M are illuminated with a uniform illuminance distribution through the system 4. The illumination area has an elongated shape in the non-scanning direction (Y direction) orthogonal to the scanning direction.

  2A is a plan view of the mask M, the projection optical systems PLA and PLB, and the plate P as viewed from the illumination device IU side of FIG. 1, and FIG. 2B is a plan view of the mask M from the state of FIG. It is a top view which shows the state which moved to + X direction. In FIG. 2 (B), the pattern area of the mask M (the drawn pattern is represented by the symbol F) is divided into three rows of partial pattern areas MA1, MA2, MA3 arranged continuously in the Y direction. For example, two two-dimensional alignment marks 8 are formed in the vicinity of the end portions in the X direction of the partial pattern areas MA1 to MA3. When exposure is performed by moving the mask M in the + X direction, the partial pattern areas MA1, MA2, and MA3 are illuminated with three illumination areas VA1, VA2, and VA3 that are arranged at a predetermined interval in the + X direction. . The illumination areas VA1 to VA3 are closed by variable blinds in the branching optical system 4 in areas other than the partial pattern areas MA1 to MA3.

  On the other hand, when exposure is performed by moving the mask M in the −X direction, as shown in FIG. 2A, the partial pattern areas MA1, MA2, and MA3 are arranged at a predetermined interval in the + X direction. Illumination is performed in the illumination areas VB1, VB2, and VB3. The illumination areas VB1 to VB3 are also closed by variable blinds in the branch optical system 4 in areas other than the partial pattern areas MA1 to MA3. The illumination areas VB1 to VB3 are arranged at positions shifted by a predetermined interval in the −X direction (or the + X direction) with respect to the illumination areas VA1 to VA3, respectively. In order to reduce the joint error, it is preferable to perform double exposure at the boundary between the partial pattern areas MA1 to MA3. Therefore, the illumination areas VA1 to VA3 and VB1 to VB3 have trapezoidal shapes in which both ends or one side in the Y direction is inclined.

  In the present embodiment, the first projection optical system PLA includes three partial projection optical systems PLA1, PLA2, and PLA3 that project an equal-size erect image of a part of the pattern of the mask M onto the plate P, respectively. The second projection optical system PLB includes three partial projection optical systems PLB 1, PLB 2, and PLB 3 that project an equal-size erect image of a part of the pattern of the mask M onto the plate P. The image of the pattern in the illumination areas VA1, VA2, and VA3 in FIG. 2B is exposed on the plate P through the three partial projection optical systems PLA1, PLA2, and PLA3 of the first projection optical system PLA. Projected onto areas (areas conjugate to illumination areas) IA1, IA2, and IA3. In addition, the image of the pattern in the illumination areas VB1, VB2, and VB3 in FIG. 2A is exposed on the plate P via the three partial projection optical systems PLB1, PLB2, and PLB3 of the second projection optical system PLB. Projected to areas IB1, IB2, and IB3.

  Accordingly, the illumination areas VA1 to VA3, VB1 to VB3 are set in the field of view on the object plane side of the partial projection optical systems PLA1 to PLA3 and PLB1 to PLB3, and the exposure areas IA1 to IA3 and IB1 to IB3 are set to the partial projection optical systems PLA1 to PLA1. It is set within the field of view on the image plane side of PLA3, PLB1 to PLB3. In this case, the exposure areas IA1 to IA3 are predetermined in the −Y direction (non-scanning direction) and the + X direction with respect to the illumination areas VA1 to VA3, respectively, so that the partial projection optical systems PLA1 to PLA3 and PLB1 to PLB3 can be easily arranged. The exposure areas IB1 to IB3 are shifted by a predetermined distance in the + Y direction (non-scanning direction) and the −X direction with respect to the illumination areas VB1 to VB3, respectively.

The partial projection optical systems PLA1 to PLA3 of the first projection optical system PLA of the present embodiment have the same configuration, and the partial projection optical systems PLB1 to PLB3 of the second projection optical system PLB are partial projection optical systems PLA1 to PLA3, respectively. Is rotated by 180 ° around an axis parallel to the Z axis.
FIG. 3 shows a configuration example of the partial projection optical system PLA1. In FIG. 3, the projection optical system PLA1 includes a first optical system 10 that receives illumination light from the illumination area VA1 of the mask M, and a first that bends the illumination light from the first optical system 10 in the −Y direction and the + X direction. A mirror 11, a second mirror 12 that bends the folded illumination light in the −Z direction, and a second optical system 13 that guides the illumination light from the second mirror 12 to the exposure area IA <b> 1 on the plate P. Yes. Each of the first optical system 10 and the second optical system 13 is, for example, an imaging optical system. For example, an intermediate imaging plane is formed between the mirror 11 and the mirror 12. In other words, the mirrors 11 and 12 shift the optical axis AX1 of the first optical system 10 to the optical axis AX2 of the second optical system 13. For example, the magnification adjustment optical system for adjusting the projection magnification and the position of the projection image in the X direction and the Y direction are adjusted to the mask side portion of the first optical system 10 or the plate side portion of the second optical system 13. An image shift optical system may be arranged.

  In FIGS. 2A and 2B, as described above, the partial projection optical systems PLB1 to PLB3 are obtained by rotating the partial projection optical systems PLA1 to PLA3 by 180 °, and thus the illumination areas VA1 to VA3 and the exposure areas. The positional relationship between the illumination regions VB1 to VB3 and the exposure regions IB1 to IB3 is a relationship obtained by rotating the positional relationship with IA1 to IA3 by 180 ° around an axis parallel to the Z axis. As a result, the exposure areas IA1 to IA3 and the exposure areas IB1 to IB3 are set as areas separated in the Y direction, and therefore, within the pattern forming area 14A of the plate P that moves in the + X direction by the exposure areas IA1 to IA3. The partial regions 16A to 16C can be exposed while being joined in the Y direction. Further, the exposure regions IB1 to IB3 can be exposed while splicing the partial regions 16A to 16C in the pattern formation region 15A of the plate P moving in the −X direction in the Y direction. As a result, the pattern formation regions 14A and 15A can each be exposed with an erect image (indicated by reference numeral F) that is the same size as the pattern of the mask M.

  Further, the regions on the plate P that are sequentially exposed by the projection optical system PLA (partial projection optical systems PLA1 to PLA3) are defined as pattern formation regions (first pattern formation regions) 14A, 14B,. If the regions on the plate P that are sequentially exposed by the projection optical systems PLB1 to PLB3) are pattern formation regions (second pattern formation regions) 15A, 15B,..., The pattern formation regions 14A, 14B,. , 15B,... Are alternately arranged on the plate P along the longitudinal direction.

  In FIG. 1, the position information of the mask stage MST holding the mask M is measured by the X-axis biaxial interferometers 5XA and 5XB and the Y-axis interferometer 5Y, and the measured values are supplied to the main control system 7. . The main control system 7 obtains the X- and Y-positions of the mask stage MST and the rotation angle θz around the Z-axis from the measured values, and a drive mechanism (not shown) such as a linear motor based on this position information. The position and speed in the X direction are controlled while maintaining the rotation angle θz of the mask stage MST at a predetermined value.

  The plate moving device PDV includes a supply roller unit 25 that unwinds the sheet-like plate P, two double roller units 26 and 27 that move the plate P in the + X direction at a constant speed, and a direction of the plate P of 180 °. A U-turn roller portion 28 for conversion, auxiliary roller portions 29 and 30 for guiding the plate P together with the U-turn roller portion 28, and two double roller portions for moving the plate P whose direction has been changed at a constant speed in the -X direction. 31 and 32 and a winding roller portion 33 for winding the plate P. Further, the plate moving device PDV drives the double roller portions 26 and 32 to measure the moving speed of the plate P between them, and drives the double roller portions 27 and 31 to drive the plate between them. A second driving unit 35 that measures the moving speed of P, a first exposure stage 21A on which a plate P that moves the image plane of the projection optical system PLA is mounted, and a plate P that moves the image plane of the projection optical system PLB. Is provided with a second exposure stage 21B. The exposure stages 21A and 21B are placed on the upper surface parallel to the XY plane of a base member (not shown) close to the Y direction, and are normally stationary on the base member. During the exposure of the plate P, the exposure stages 21A and 21B suck and hold the plate P with a suction force (for example, by vacuum suction) within a range that does not hinder the movement of the plate P. Further, the exposure stages 21A and 21B can be moved in the X direction within a predetermined range as required. Position information in the X direction of the exposure stages 21A and 21B is measured by, for example, a laser interferometer (not shown), and this measurement information is supplied to the main control system 7.

  The approximate moving speed of the plate P from the supply roller section 25 to the scraping roller section 33 is defined by the scraping speed of the scraping roller section 33. The exact moving speed of the plate P is, for example, the double roller section 27 and 32. The second drive unit 35 includes a rotation motor that drives the double roller unit 27, and a detection unit that detects the movement speed of the plate P in the + X direction from the rotation speed of the double roller unit 27. The main control system 7 includes: Based on the detection result, the rotary motor is driven so that the moving speed of the plate P in the + X direction becomes a target value. The first drive unit 34 includes a rotation motor that drives the double roller unit 32 and a detection unit that detects the movement speed of the plate P in the −X direction from the rotation speed of the double roller unit 32. 7 drives the rotary motor so that the moving speed of the plate P in the -X direction becomes a target value based on the detection result.

  In addition, aerial image measurement systems 22A, 22B, and 22C that measure the image positions of the alignment marks 8 of the mask M in FIG. 2B by the partial projection optical systems PLA1, PLA2, and PLA3 are installed on the first exposure stage 21A. The measurement results of the aerial image measurement systems 22A to 22C are supplied to the alignment processing system 6. Similarly, three aerial image measurement systems (not shown) are also installed in the second exposure stage 21B, and these aerial image measurement systems serve as partial projection optics for the alignment mark 8 of the mask M in FIG. The positions of the images by the systems PLB1 to PLB3 are measured, and the measurement results are supplied to the alignment processing system 6. The alignment processing system 6 obtains the position of the mask M in the X and Y directions and the rotation angle θz (alignment information) from the position information of the image of the alignment mark 8 of the mask M, and supplies this alignment information to the main control system 7. To do.

Further, a first set of image processing type alignment sensors 23A and 24A is installed above the plate P on the near side (−X direction) of the first projection optical system PLA, and the near side (second side of the second projection optical system PLB ( A second set of image processing type alignment sensors 23B and 24B are installed above the plate P in the + X direction).
In addition, for example, a pair of alignments are provided at different positions in the Y direction in front of the pattern formation region 14A and the like by the first projection optical system PLA and the pattern formation region 15A and the like by the second projection optical system PLB on the plate P, respectively. A mark 17 (see FIG. 2A) is formed. Information on the positional relationship between the pattern formation regions 14A and 15A and the corresponding alignment marks 17 is stored in the storage device of the main control system 7.

  The alignment sensors 23A, 24A and 23B, 24B respectively irradiate the plate P with illumination light in a wavelength region that does not sensitize the photoresist, detect the alignment marks 17 in front of the pattern formation regions 14A and 15A, and detect the detection results. Supplied to the alignment processing system 6. Further, by moving the exposure stages 21A and 21B in the X direction in advance and detecting reference marks (not shown) such as the aerial image measurement system 22A with the alignment sensors 23A, 24A and 23B, 24B, the alignment sensors 23A, The distance (baseline) in the X direction between the detection centers of 24A, 23B, and 24B and the reference position of the pattern image of the mask M is obtained, and this baseline is stored in the alignment processing system 6. The alignment processing system 6 supplies the main control system 7 with position information obtained by correcting the detection results of the alignment sensors 23A, 24A and 23B, 24B with the baseline.

Based on the measurement results of the aerial image measurement systems 22A to 22C and the detection results of the alignment sensors 23A, 24A and 23B, 24B, the main control system 7 converts the pattern image of the mask M into the pattern formation regions 14A and 15A of the plate P, etc. It can be overlaid with high accuracy.
Hereinafter, an example of the exposure operation of the exposure apparatus 1 of FIG. 1 according to the present embodiment will be described with reference to the flowchart of FIG. This exposure operation is controlled by the main control system 7.

  First, the mask M is loaded on the mask stage MST of FIG. 1 (step 101). Next, images of the alignment marks 8 of the mask M by the projection optical systems PLA and PLB are sequentially detected via the aerial image measurement systems 22A to 22C, and the rotation of the mask stage MST (and hence the mask M) based on the detection results. Corner correction and X-direction position measurement (mask alignment) are performed. Thereafter, the mask stage MST is moved to the scanning start position on the −X direction side (step 102).

In step 120, the photoresist (resist) is coated on the sheet-shaped plate P for one roll in a resist coater (not shown) in almost step 120 in parallel with the operation so far. Further, it is assumed that an alignment mark 17 is formed in the previous process before the pattern formation regions 14A and 15A on the plate P.
Next, the sheet-like plate P for one roll coated with the photoresist is attached to the supply roller unit 25 in FIG. 1, and the leading end of the plate P is attached to the double roller units 26 and 27, the U-turn roller unit 28, and It passes over the scooping roller unit 33 through the double roller units 31 and 32 (step 103). Then, the plate roller unit 33 and the double roller units 27 and 32 of the plate moving device PDV are driven to start the plate P from the supply roller unit 25 to the plate roller unit 33 at a constant speed. (Step 104).

  Next, the alignment processing system 6 determines whether or not a pair of alignment marks 17 (first alignment marks) on the plate P is detected by the first set of alignment sensors 23A and 24A (step 105), and the alignment is performed. When the mark 17 is detected, the main control system 7 is notified. In response to this, the main control system 7 maintains the positional relationship in which the pattern formation region on the plate P immediately after the detected alignment mark (referred to as 14A) and the image of the pattern region of the mask M overlap. As described above, the movement of the mask stage MST in the + X direction is started in synchronization with the movement of the plate P (step 106). The moving speed of the plate P in the + X direction on the image plane side of the first projection optical system PLA is equal to the moving speed of the mask M in the + X direction.

  Although the mask M and the plate P are not completely synchronized immediately after the start of the movement of the mask stage MST, the mask M and the plate P are completely synchronized when a short time has elapsed after the start of the movement of the mask stage MST. Then move. Therefore, the mask stage MST may move faster than the constant movement speed during scanning exposure immediately after the movement starts. Thereafter, the predetermined variable blind in the branch optical system 4 is gradually opened, and the partial pattern areas MA1 to MA3 of the mask M are sequentially illuminated by the illumination areas VA1 to VA3 in FIG. The pattern formation region 14A (first pattern formation region) on the plate P is scanned and exposed with an image formed by the first projection optical system PLA (step 107).

  FIG. 5A to FIG. 5G are simplified plan views showing changes in the positional relationship between the mask M and the plate P during scanning exposure. In FIG. 5B to FIG. 5G, the hatched area on the plate P indicates the area where the exposure has been completed. In this case, first, as shown in FIG. 5A, the exposure of the plate P (pattern formation region 14A) via the partial projection optical system PLA1 by the pattern in the first partial pattern region of the mask M is started. Next, as shown in FIG. 5B, exposure of the plate P via the partial projection optical systems PLA2 and PLA3 with the patterns in the second and third partial pattern regions of the mask M is started sequentially. Thereafter, in FIG. 5C, the exposure of the pattern of the mask M through the partial projection optical system PLA1 is completed, and in FIG. 5D, the exposure of the pattern of the mask M through the partial projection optical system PLA3 is completed. When this is done, all the variable blinds in the branch optical system 4 are closed, and the scanning exposure of the pattern forming region 14A is completed. Thereafter, mask stage MST is stopped (step 108).

  Next, the alignment processing system 6 determines whether or not the next pair of alignment marks 17 (second alignment marks) on the plate P is detected by the second set of alignment sensors 23B and 24B (step 109). When the alignment mark 17 is detected, the main control system 7 is notified accordingly. In response to this, the main control system 7 determines the positional relationship in which the pattern formation region on the plate P immediately after the detected alignment mark 17 (referred to as 15A) and the image of the pattern region of the mask M overlap. In order to maintain, the movement of the mask stage MST in the −X direction is started in synchronization with the movement of the plate P (step 110). The moving speed of the plate P in the −X direction on the image plane side of the second projection optical system PLB is equal to the moving speed of the mask M in the −X direction. Also in this case, the mask M and the plate P are not completely synchronized immediately after the start of the movement of the mask stage MST, but after a short time has elapsed after the start of the movement of the mask stage MST, the mask M and the plate P are Move completely in sync.

  Thereafter, the predetermined variable blind in the branching optical system 4 is gradually opened, and the partial pattern areas MA1 to MA3 of the mask M are sequentially illuminated with the illumination areas VB1 to VB3 in FIG. The pattern formation region 15A (second pattern formation region) on the plate P is scanned and exposed with an image of the second projection optical system PLB (step 111). In this case, the exposure of the plate P (pattern formation region 15A) through the partial projection optical systems PLB3 and PLB2 by the pattern of the mask M is sequentially started between FIG. 5 (D) and FIG. 5 (E). In FIG. 5E, exposure of the plate P via the partial projection optical system PLB1 using the pattern of the mask M is started. Thereafter, in FIG. 5F, the exposure of the pattern of the mask M through the partial projection optical system PLB3 is completed, and in FIG. 5G, the exposure of the pattern of the mask M through the partial projection optical system PLB1 is completed. When this is done, all the variable blinds in the branching optical system 4 are closed, and the scanning exposure of the pattern forming region 15A is completed. Thereafter, mask stage MST is stopped (step 112).

  Next, it is determined whether or not the exposure of all the plates P of one roll is completed (step 113). As an example, the exposure ends when the alignment sensor 23A, 24A detects a mark indicating the end on the plate P. If the exposure is not completed, the operation returns to step 105, and when the alignment sensors 23A and 24A detect the next alignment mark 17 on the plate P, in steps 106 to 108, the operation shown in FIG. As shown, the mask M is moved in the + X direction, and the next pattern formation region 14B on the plate P is scanned and exposed through the first projection optical system PLA. Thereafter, when the alignment sensors 23B and 24B detect the next alignment mark 17 on the plate P (step 109), in steps 110 to 112, the mask M is moved in the −X direction to move the second projection optical system PLB. Then, the next pattern formation region 15B on the plate P is scanned and exposed (see FIG. 2A).

  Thereafter, while the mask M is reciprocated along the X direction, scanning exposure of adjacent pattern formation regions on the plate P is performed alternately via the projection optical systems PLA and PLB. As a result, an image of the same size as the pattern of the mask M is exposed to a series of many pattern formation regions on the plate P. When the exposure is completed in step 113, the exposed plate P for one roll is removed from the scraping roller unit 33, and the removed plate P is developed in a developer unit (not shown). If there is a plate for one roll to be exposed next, the operations in steps 103 to 114 are repeated.

Effects and the like of this embodiment are as follows.
(1) The exposure apparatus 1 of this embodiment is an exposure apparatus that exposes the plate P through a pattern formed on the mask M, and holds the mask M and reciprocates along the X direction (scanning direction). Mask stage MST, first and second projection optical systems PLA and PLB that project the pattern images of partial pattern areas MA1 to MA3 of the pattern onto plate P, respectively, and plate P on mask stage MST. A plate moving device PDV that moves in a direction corresponding to the moving direction, and a main control system 7 that drives the mask stage MST and the plate moving device PDV synchronously are provided.

  Further, the exposure method by the exposure apparatus 1 controlled by the main control system 7 reciprocates the mask M along the X direction, and in the first period (step 107) during the reciprocation of the mask M, While exposing the plate P through the patterns of the partial pattern areas MA1 to MA3 and the first projection optical system PLA, the plate P is moved in synchronization with the movement of the mask M to expose the pattern forming area 14A of the plate P. Then, in the second period (step 111) during the reciprocating movement of the mask M, the plate P is exposed through the patterns of the partial pattern areas MA1 to MA3 and the second projection optical system PLB, and is synchronized with the movement of the mask M. The pattern forming region 15A of the plate P is exposed by moving the plate P to be moved.

  The exposure method by the exposure apparatus 1 controlled by the main control system 7 is that the mask P is exposed while exposing the plate P through the patterns of the partial pattern areas MA1 to MA3 of the mask M and the first projection optical system PLA. The movement in the + X direction (first direction) and the movement of the plate P in the + X direction (second direction) are performed synchronously to expose the pattern formation region 14A on the plate P 107, and the partial pattern region MA1 The movement of the mask M in the -X direction and the movement of the plate P in the -X direction (third direction) are synchronized while exposing the plate P through the pattern of ~ MA3 and the second projection optical system PLB. And step 111 of exposing the pattern formation region 15A on the plate P.

According to the present embodiment, since the plate P can be exposed alternately through the two projection optical systems PLA and PLB during the reciprocating movement of the mask M, the plate P is a long sheet-like photosensitive object having flexibility. Even if it exists, it can expose efficiently to a series of pattern formation area 14A, 15A etc. on the plate P, moving the plate P continuously in a fixed direction.
For example, the plate P may be stopped when the mask stage MST is stopped, and may be moved intermittently in accordance with the mask stage MST. Alternatively, the movement speed of the plate P may be decreased when the mask stage MST is stopped, for example.

  (2) Further, the projection optical systems PLA and PLB are exposed to the illumination areas VA1 to VA3 and VB1 to VB3 by the optical system (shift optical system) including the mirrors 11 and 12, respectively. Are shifted symmetrically along the direction intersecting the scanning direction of the mask M. Therefore, the projection optical systems PLA and PLB can have the same configuration (but rotated by 180 °), and different portions of the plate P moving in parallel in the exposure areas of the projection optical systems PLA and PLB can be exposed. .

  The point is that the exposure areas IA1 to IA3 and IB1 to IB3 need only be arranged separately in the Y direction (non-scanning direction), so that the illumination area VA1 and the like of the first projection optical system PLA and the exposure area IA1 and the like are arranged. The exposure area IB1 and the like may be largely shifted in the Y direction with respect to the illumination area VB1 and the like of the second projection optical system PLB. In this case, the configurations of the projection optical systems PLA and PLB are different from each other, but the configuration of the first projection optical system PLA can be simplified.

  (3) The projection optical systems PLA and PLB project images of patterns in the three illumination areas VA1 to VA3 and VB1 to VB3 arranged in the direction intersecting the scanning direction of the mask M on the plate P, respectively. Three partial projection optical systems PLA1 to PLA3 and PLB1 to PLB3 are included. Therefore, even when the width of the plate P is large, the projection optical systems PLA and PLB can be downsized as a whole.

The number of partial projection optical systems PLA1 to PLA3 (PLB1 to PLB3) is arbitrary. Further, each of the projection optical systems PLA and PLB may be a single projection optical system that projects an image of a pattern in one illumination area onto one exposure area.
(4) The magnifications of the projection optical systems PLA and PLB are equal, and the illumination areas VA1 to VA3 of the projection optical system and the illumination areas VB1 to VB3 of the projection optical system PLB are the same partial pattern areas on the mask M. Pass through MA1 to MA3. Thereby, the pattern (the same pattern) of the mask M can be exposed to different pattern forming regions on the plate P alternately via the projection optical systems PLA and PLB.

(5) In addition, the scanning exposure in step 107 is within a period in which the mask M is moved in the + X direction, and the scanning exposure in step 111 is in a period in which the mask M is moved in the −X direction. Therefore, since the plate P can be exposed while the mask M is moving in the + X direction during the reciprocating movement (outward path) and during the movement in the −X direction (return path), the plate P can be exposed more efficiently.
(6) In step 107, the movement direction of the portion of the plate P being exposed (pattern formation region 14A) is the + X direction, and in step 111, the movement direction of the portion of the plate P being exposed (pattern formation region 15A) is reversed. Direction. Accordingly, different portions of the plate P can be exposed in the forward and backward paths during the reciprocating movement of the mask M.

  (7) Further, the plate P is a flexible sheet-like member, and the plate moving device PDV includes a U-turn roller portion 28 (direction changing portion) that changes the moving direction of the plate P by 180 °. The pattern formation region 14A of the plate P that has passed through the exposure region of the projection optical system PLA passes through the exposure region of the first projection optical system PLB via the U-turn roller unit 28. Therefore, with a simple mechanism, the plate P can be moved in the + X direction with respect to the exposure area of the projection optical system PLA, and the plate P can be moved in the −X direction with respect to the exposure area of the projection optical system PLB.

[Second Embodiment]
Next, a second embodiment of the present invention will be described with reference to FIGS. The exposure apparatus of the present embodiment uses projection optical systems PLC and PLD with magnifications instead of the projection optical systems PLA and PLB of the same magnification as the exposure apparatus 1 of FIG. The difference is that a mask MA having a different pattern is used. In the following, in FIG. 6 and FIG. 7, parts corresponding to those in FIG. 2 and FIG. It is assumed that the magnification β of the projection optical systems PLC and PLD of this embodiment is 2 times or more.

  6A is a plan view of the mask MA, the first and second projection optical systems PLC and PLD, and the plate P viewed from the illumination device side of the exposure apparatus of the present embodiment, and FIG. It is a top view which shows the state which moved the mask MA to + X direction from the state of 6 (A). In FIG. 6A, the pattern area of the mask MA is divided into six partial pattern areas MC1, MD1, MC2, MD2, MC3, MD3 that are sequentially divided and arranged in the Y direction. Alignment marks 8 are formed in the vicinity of the ends of the MD 3 in the X direction. Further, in the first set of partial pattern areas MC1, MC2, and MC3 that are alternately arranged in the Y direction of the mask MA, a pattern (represented by the symbol F) to be transferred to one pattern formation area on the plate P is reduced. A divided pattern (first pattern) is formed.

  However, in the present embodiment, since the plurality of partial projection optical systems constituting the projection optical system PLC have the magnification, there are steps in the X direction (scanning direction) positions of the partial pattern areas MC1 to MC3. In order to reduce the joint error, the same pattern is formed overlappingly at the end portions in the Y direction of the adjacent partial pattern areas MC1 to MC3. Similarly, in the second set of partial pattern areas MD1, MD2, and MD3 that are alternately arranged in the Y direction of the mask MA, the same pattern (second pattern) as the patterns formed in the partial pattern areas MC1 to MC3 is provided. Is formed.

  Further, as shown in FIG. 6B, when exposure is performed by moving the mask M in the + X direction, the three illuminations in which the partial pattern areas MC1, MC2, and MC3 are arranged at a predetermined interval in the + X direction. Illumination is performed in areas VA1, VA2, and VA3 (1 / β the size of the illumination area in FIG. 2B). On the other hand, when exposure is performed by moving the mask M in the −X direction, as shown in FIG. 6A, the partial pattern regions MD1, MD2, and MD3 are arranged at a predetermined interval in the + X direction. Illumination is performed in illumination areas VB1, VB2, and VB3 (1 / β of the illumination area in FIG. 2B). Accordingly, the illumination areas VB1 and VB2 are disposed between the illumination areas VA1 to VA3 in the Y direction, and the illumination area VB3 is disposed outside the illumination area VA3 in the + Y direction. The illumination areas VB1 to VB3 are arranged at positions shifted by a predetermined interval in the −X direction with respect to the illumination areas VA1 to VA3, respectively.

  In the present embodiment, the first projection optical system PLC includes three partial projection optical systems PLC1, PLC2, and PLC3 that project an erect image having a magnification of β that is a part of the pattern of the mask MA onto the plate P. The second projection optical system PLD includes three partial projection optical systems PLD1, PLD2, and PLD3 that project an erect image with a magnification of β that is a part of the pattern of the mask MA onto the plate P, respectively. The pattern images in the illumination areas VA1, VA2, and VA3 in FIG. 6B are exposed on the plate P through the three partial projection optical systems PLC1, PLC2, and PLC3 of the first projection optical system PLC. Projected to areas IA1, IA2, and IA3. In addition, the image of the pattern in the illumination areas VB1, VB2, and VB3 in FIG. 6A is exposed on the plate P through the three partial projection optical systems PLD1, PLD2, and PLD3 of the second projection optical system PLD. Projected to areas IB1, IB2, and IB3.

  In this case, the exposure areas IA1 to IA3 are predetermined in the −Y direction (non-scanning direction) and the + X direction with respect to the illumination areas VA1 to VA3, respectively, so that the partial projection optical systems PLC1 to PLC3 and PLD1 to PLD3 can be easily arranged. The exposure areas IB1 to IB3 are shifted by a predetermined distance in the + Y direction (non-scanning direction) and the −X direction with respect to the illumination areas VB1 to VB3, respectively. Further, the partial projection optical systems PLC1 to PLC3 have the same configuration, and the partial projection optical systems PLD1 to PLD3 are configured by rotating the partial projection optical systems PLC1 to PLC3 by 180 ° around an axis parallel to the Z axis.

  As a result, the exposure areas IA1 to IA3 and the exposure areas IB1 to IB3 are set as areas separated in the Y direction, and therefore, within the pattern forming area 14A of the plate P that moves in the + X direction by the exposure areas IA1 to IA3. The partial regions 16A to 16C can be exposed while being joined in the Y direction. Further, the exposure regions IB1 to IB3 can be exposed while splicing the partial regions 16A to 16C in the pattern formation region 15A of the plate P moving in the −X direction in the Y direction. As a result, it is possible to expose erect images (indicated by symbol F) with the magnification β of the pattern of the mask MA to the pattern formation regions 14A and 15A, respectively. In this case, the scanning speed of the plate P is β times the scanning speed of the mask MA in the X direction during scanning exposure.

  FIG. 7A to FIG. 7G are simplified plan views showing changes in the positional relationship between the mask MA and the plate P during scanning exposure in the present embodiment. In FIG. 7B to FIG. 7G, the hatched area on the plate P indicates the area where the exposure has been completed. In this case, the plate P continuously in the + X direction in the exposure area of the projection optical system PLC and continuously in the −X direction in the exposure area of the projection optical system PLD at a constant speed (speed obtained by multiplying the scanning speed of the mask MA by β). Moving. When the mask MA is moved in the + X direction, as shown in FIG. 7A, the plate P (pattern formation region 14A) through the partial projection optical system PLC1 with the pattern in the partial pattern region MC1 of the mask M is used. Exposure is started. Next, as shown in FIG. 7B, exposure of the plate P is sequentially started via the partial projection optical systems PLC2 and PLC3 with the patterns in the partial pattern areas MC2 and MC3 of the mask MA.

Thereafter, in FIG. 7C, the exposure of the mask MA pattern through the partial projection optical system PLC1 is completed, and in FIG. 7D, the exposure of the mask MA pattern through the partial projection optical system PLD3 is completed. When this is done, the scanning exposure of the pattern formation region 14A is completed and the mask MA is stopped.
After that, when the mask MA is moved in the −X direction, the plate P (pattern formation region) through the partial projection optical systems PLD3 and PLD2 according to the pattern of the mask MA between FIG. 7D and FIG. The exposures 15A) are started sequentially. In FIG. 7E, exposure of the plate P is started via the partial projection optical system PLD1 with the pattern of the mask MA. Thereafter, in FIG. 7F, the exposure of the mask MA pattern through the partial projection optical system PLD3 is completed, and in FIG. 7G, the exposure of the mask MA pattern through the partial projection optical system PLC1 is completed. When this occurs, the mask MA is stopped. After that, the mask MA is reciprocated along the X direction, and the plate P is alternately scanned and exposed via the projection optical systems PLC and PLD. An enlarged image of the pattern of the mask MA can be sequentially exposed to the pattern formation regions 14A, 15A and the like. Therefore, it is possible to efficiently expose the long sheet-like plate P that is rolled.

Effects and the like of this embodiment are as follows.
(1) In the exposure apparatus of the present embodiment, the magnification of the first and second projection optical systems PLC and PLD from the mask MA to the plate P is at least twice, and the plurality of illumination areas VA1 to VA3 of the projection optical system PLC The plurality of illumination areas VB1 to VB3 of the projection optical system PLD are alternately arranged on the mask MA in the Y direction orthogonal to the scanning direction. Therefore, as in the first embodiment, the plate P can be exposed efficiently and alternately through the projection optical systems PLC and PLD during the reciprocating movement of the mask MA, and the mask MA can be downsized. Furthermore, since the projection optical systems PLC and PLD can be arranged close to each other, the projection optical systems PLC and PLD can be downsized as a whole.

  (2) Different patterns (first pattern and second pattern) are formed in the partial pattern areas MC1 to MC3 and the partial pattern areas MD1 to MD3 on the mask MA in FIG. The patterns of MC3 and MD1 to MD3 may be sequentially exposed (double exposure) to the same pattern formation region on the plate P via the projection optical systems PLC and PLD, respectively. Thus, double exposure can be efficiently performed on each pattern formation region on the plate P.

Further, different device patterns are formed in the partial pattern areas MC1 to MC3 and MD1 to MD3, and the pattern images of the partial pattern areas MC1 to MC3 and MD1 to MD3 are differently arranged on the plate P, for example, alternately. You may expose a pattern formation area.
In addition, as the arrangement of the plurality of partial projection optical systems PLC1 to PLC3 and PLD1 to PLD3 constituting the projection optical systems PLC and PLD having a magnification of the present embodiment, as shown in FIGS. 8B to 8E. Various arrangements are possible. FIG. 8A shows the arrangement of the projection optical systems PLC and PLD shown in FIG. In FIG. 8A, there are steps b and a in the X direction between the partial pattern areas MC1 to MC3 (also MD1 to MD3) on the mask MA. When the magnified images of the patterns in the partial pattern areas MC1 to MC3 are exposed on the plate P via the partial projection optical systems PLC1 to PLC3, the steps b and a are at the same position in the X direction. It is set so that exposure is performed by splicing in the Y direction.

  Next, in the arrangement shown in FIG. 8B, the illumination areas VB1, VA1, and the like are arranged on substantially the same straight line in an oblique direction so as to intersect the X direction, and the partial projection of the first projection optical system is accordingly performed. The optical systems PLC1 to PLC3 are arranged such that the exposure area IA1 and the like shift in the −Y direction, and the partial projection optical systems PLD1 to PLD3 of the second projection optical system shift the exposure area IB1 and the like in the + Y direction. Is arranged.

8C is the same as the arrangement of FIG. 8B, but the partial projection optical systems PLC1 to PLC3 and PLD1 to PLD3 are the same as those of FIG. 8A. In the same manner as the arrangement of (), the exposure area is arranged to shift in an oblique direction with respect to the illumination area.
8D is obtained by replacing the positions of the illumination areas VA1, VB1, and the like of the partial projection optical systems PLC1 to PLC3 and PLD1 to PLD3 with respect to the arrangement of FIG. 8C.

  Further, the arrangement of FIG. 8E is the illumination area of each of the plurality of partial projection optical systems PLC1 to PLC3 of the first projection optical system, where x is the magnification of the first and second projection optical systems. The ratio of the distances from the predetermined reference positions of VA1 to VA3 and the exposure areas IA1 to IA3 is 1: x. That is, in FIG. 8E, the exposure area IA2 is shifted in the Y direction with respect to the illumination area VA2 of the central partial projection optical system PLC2, and the centers of the illumination area VA2 and the exposure area IA2 are the reference positions. It becomes. If the interval in the X direction between the illumination area VA1 and the illumination area VA2 of the projection optical system PLC1 is 1, the interval in the X direction between the exposure area IA1 and the exposure area IA2 of the projection optical system PLC1 is x. Similarly, if the interval in the X direction between the illumination area VA3 and the illumination area VA2 of the projection optical system PLC3 is 1, the interval in the X direction between the exposure area IA3 and the exposure area IA2 of the projection optical system PLC3 is x.

  Further, the ratio of the distance from the predetermined reference position of the illumination area and the exposure area of each of the plurality of partial projection optical systems PLD1 to PLD3 of the second projection optical system is also 1: x. With this arrangement, the X-direction positions of the partial pattern areas MC1 to MD3 (and MD1 to MD3) arranged in the Y direction on the mask MA are set to the same position, and the partial pattern areas MC1 to MD3 (and MD1) are set. The position in the X direction of the image on the plate P by the partial projection optical systems PLC1 to PLC3 (and PLD1 to PLD3) of (MD3) can be made the same position. Therefore, the mask MA can be most miniaturized.

In the second embodiment, the partial pattern areas MC1 to MC3, MD1 to MD3 are formed on one mask. For example, the partial pattern areas MC1 to MC3, MD1 to MD3 are a plurality of two or more sheets. The masks may be formed separately. In these cases, a plurality of masks are scanned by a common mask stage.
In the second embodiment, the magnifications of the projection optical systems PLC and PLD are two times or more, but the magnifications of the projection optical systems PLC and PLD can be set between 1 and 2 times. . In this case, the illumination areas of the projection optical systems PLC and PLD are arranged so as to pass through the same partial pattern area on the mask MA.

  In the above embodiment, the same plate P is scanned in the exposure areas of the two projection optical systems PLA and PLB (or PLC and PLD). However, as shown in the exposure apparatus 1A in FIG. Different plates P1 and P2 may be exposed in the exposure areas of the projection optical systems PLA and PLB (or PLC and PLD). 9, parts corresponding to those in FIG. 1 are denoted by the same reference numerals, and detailed description thereof is omitted.

  In FIG. 9, plates P1 and P2 are each a sheet-like member having flexibility similar to the plate P of FIG. Further, the plate P1 is scraped off from the supply roller portion 25 by the scraping roller portion 33A in the + X direction via the double roller portions 26 and 27. Then, the plate P2 is scraped off from the supply roller portion 25A by the scraping roller portion 33 in the −X direction via the double roller portions 31 and 32. Other configurations are the same as those of the exposure apparatus of FIG.

  In the exposure apparatus 1A of FIG. 9, when the mask MA is moved in the + X direction during the reciprocating movement of the mask MA in the X direction, the pattern of the mask MA is changed to the first projection optical system PLA (partial projection optical systems PLA1 to PLA1). The pattern formation area of the plate P1 that is moving synchronously at the same speed in the + X direction via the PLA 3) is exposed. When the mask MA is moved in the −X direction, the pattern of the mask MA is synchronously moved in the −X direction at the same speed via the second projection optical system PLB (partial projection optical systems PLB1 to PLB3). The pattern formation region of the plate P2 is exposed. In this case, the plates P1 and P2 may be stationary during a period in which exposure through the pattern of the mask MA is not performed. By intermittently moving the plates P1 and P2 in this way, it is possible to efficiently expose the pattern image of the mask MA to each pattern forming region arranged in the vicinity of almost the entire surface of the plates P1 and P2.

Further, by forming a predetermined pattern (circuit pattern, electrode pattern, etc.) on the plate P using the exposure apparatus 1 of FIG. 1, for example, in the above embodiment, a large number of liquid crystal display elements as micro devices are obtained. You can also Hereinafter, an example of this manufacturing method will be described with reference to the flowchart of FIG.
In step S401 (pattern formation process) of FIG. 10, first, a coating process for preparing a photosensitive substrate by applying a photoresist on a sheet-like plate to be exposed, and a mask for a liquid crystal display element using the exposure apparatus described above. An exposure process for transferring and exposing the pattern to a number of pattern forming regions on the photosensitive substrate and a developing process for developing the photosensitive substrate are performed. A predetermined resist pattern is formed on the plate by a lithography process including the coating process, the exposure process, and the development process. Following this lithography process, a predetermined pattern including a large number of electrodes and the like is formed on the plate through an etching process using the resist pattern as a mask, a resist stripping process, and the like. The lithography process or the like is executed a plurality of times according to the number of layers on the plate.

  In the next step S402 (color filter forming step), a large number of three fine filter sets corresponding to red R, green G, and blue B are arranged in a matrix, or red R, green G, and blue B are arranged. A color filter is formed by arranging a set of three stripe-shaped filters in the horizontal scanning line direction. In the next step S403 (cell assembly process), for example, liquid crystal is injected between the plate having the predetermined pattern obtained in step S401 and the color filter obtained in step S402, and a liquid crystal panel (liquid crystal cell) is obtained. ).

In subsequent step S404 (module assembling process), an electric circuit for causing the liquid crystal panels (liquid crystal cells) thus assembled to perform a display operation and components such as a backlight are attached, and a liquid crystal display element is obtained. Complete as.
According to the above-described method for manufacturing a liquid crystal display element, a process of exposing a mask pattern onto a photosensitive substrate using the exposure apparatus of the above-described embodiment, and a process such as development is performed on the photosensitive substrate exposed in this process. Process. Therefore, since exposure can be performed efficiently, the throughput in the device manufacturing factory can be improved.

For example, in the embodiment of FIG. 1, a resist coater is provided between, for example, the supply roller 25 and the double roller 26, and a resist developer is provided between the double roller 32 and the scraping roller 33. It is also possible to provide it.
In the above-described embodiment, a long sheet-like member having flexibility is used as the plate to be exposed. However, the plate is a rectangular shape having a relatively high rigidity for manufacturing a liquid crystal display element or the like. A flat glass plate, a ceramic substrate for manufacturing a thin film magnetic head, a circular semiconductor wafer for manufacturing a semiconductor element, or the like can also be used.

  In the above-described embodiment, a discharge lamp is provided as an exposure light source, and necessary g-line light, h-line light, and i-line light are selected. However, the present invention is not limited to this, and as exposure light, light from an ultraviolet LED, laser light from a KrF excimer laser (248 nm) or ArF excimer laser (193 nm), or a harmonic of a solid-state laser (semiconductor laser, etc.), for example, a YAG laser The present invention can be applied even when a third harmonic (wavelength 355 nm) or the like is used.

  Thus, the present invention is not limited to the above-described embodiments, and various configurations can be taken without departing from the gist of the present invention.

It is a perspective view which shows the structure of the exposure apparatus which concerns on 1st Embodiment. (A) is a plan view of the mask M, projection optical systems PLA and PLB, and the plate P as viewed from the illumination device IU side in FIG. 1, and (B) is a state in which the mask M is moved in the X direction from FIG. FIG. It is a figure which shows the structural example of the partial projection optical system PLA1 of FIG. It is a flowchart which shows an example of the exposure operation | movement of 1st Embodiment. It is a figure which shows an example of the change of the positional relationship of the partial projection optical system, the mask M, and the plate P during exposure in 1st Embodiment. (A) is a plan view of the mask MA, the projection optical systems PLC and PLD, and the plate P viewed from the illumination device side in the second embodiment, and (B) is a mask MA moved from FIG. 6 (A) in the X direction. It is a top view which shows the state which carried out. It is a figure which shows an example of the change of the positional relationship of the partial projection optical system, mask MA, and plate P in exposure in 2nd Embodiment. (A) is a diagram showing the arrangement of the partial projection optical system of the second embodiment, and (B), (C), (D), and (E) show other examples of the arrangement of the partial projection optical system, respectively. FIG. It is a perspective view which shows the exposure apparatus of another embodiment of this invention. It is a flowchart which shows an example of the manufacturing method of a microdevice.

  DESCRIPTION OF SYMBOLS 1,1A ... Exposure apparatus, M, MA ... Mask, PLA, PLC ... 1st projection optical system, PLA1-PLA3, PLC1-PLC3 ... Partial projection optical system, PLB, PLD ... 2nd projection optical system, PLB1- PLB3, PLD1 to PLD3 ... Partial projection optical system, VA1 to VA3, VB1 to VB3 ... Illumination area, IA1 to IA3, IB1 to IB3 ... Exposure area, P, P1, P2 ... Sheet plate, 14A, 15A ... Pattern formation Area, 25 ... Supply roller part, 27, 32 ... Double roller part, 28 ... U-turn roller part, 33 ... Sweeper roller part

Claims (31)

An exposure method for exposing a substrate through a pattern provided on a mask,
Reciprocating the mask along the scanning direction,
The movement of the first substrate synchronized with the movement of the mask while exposing the first substrate through the first pattern of the patterns and the first projection optical system in the first period during the reciprocation of the mask. And
The movement of the second substrate synchronized with the movement of the mask while exposing the second substrate through the second pattern of the patterns and the second projection optical system during the second period during the reciprocation of the mask. An exposure method characterized by performing:   2. The exposure method according to claim 1, wherein at least one of the first and second projection optical systems is shifted in the direction in which the exposure region intersects the scanning direction with respect to the illumination region.   The first and second projection optical systems respectively project a plurality of partial projection optics for projecting the image of the pattern in a plurality of illumination regions arranged in a direction intersecting the scanning direction onto the first and second substrates. The exposure method according to claim 1, comprising a system. The magnification of the first and second projection optical systems is equal,
4. The exposure method according to claim 3, wherein the plurality of illumination areas of the first projection optical system and the plurality of illumination areas of the second projection optical system pass through the same area on the mask. The magnification of the first and second projection optical systems from the mask to the first and second substrates is at least twice;
The plurality of illumination areas of the first projection optical system and the plurality of illumination areas of the second projection optical system are alternately arranged on the mask in a direction orthogonal to the scanning direction. 4. The exposure method according to 3. When the magnification of the first and second projection optical systems is β,
6. The ratio of the distance from the predetermined reference position of the illumination area and exposure area of each of the plurality of partial projection optical systems of each of the first and second projection optical systems is 1: β. The exposure method as described. The first period is within a period in which the mask is moved in a first direction parallel to the scanning direction;
The exposure method according to claim 1, wherein the second period is within a period in which the mask is moved in a direction opposite to the first direction.   8. The exposure method according to claim 7, wherein the moving direction of the first substrate during the first period is opposite to the moving direction of the second substrate during the second period. The first substrate and the second substrate are the same sheet-like member having flexibility,
9. The sheet-like member that has passed through the exposure area of the first projection optical system is changed in direction and passes through the exposure area of the second projection optical system. An exposure method according to 1.   The exposure method according to claim 9, wherein the sheet-like member has a strip shape. Exposing the first region of the sheet-like member through the first projection optical system in the first period;
10. The exposure method according to claim 9, wherein in the second period, a second region different from the first region of the sheet-like member is exposed through the second projection optical system.   The exposure method according to claim 1, wherein the first pattern is equal to the second pattern.   The exposure method according to claim 1, wherein the first pattern is different from the second pattern. An exposure method for exposing a substrate through a pattern provided on a mask,
While the first substrate is exposed through the first pattern of the patterns and the first projection optical system, the movement of the mask in the first direction and the movement of the first substrate in the second direction are synchronized. Steps to be performed
While exposing the second substrate through the second pattern of the patterns and the second projection optical system, the mask moves in the direction opposite to the first direction and the second substrate moves in the third direction. And the process of performing
An exposure method comprising:   15. The exposure method according to claim 14, wherein at least one of the first and second projection optical systems is shifted in a direction in which the exposure area intersects the first direction with respect to the illumination area. .   The first and second projection optical systems each project a plurality of images of the pattern in a plurality of illumination regions arranged in a direction intersecting the first direction of the mask onto the first and second substrates. 16. The exposure method according to claim 14, further comprising a partial projection optical system. The magnification of the first and second projection optical systems is equal,
The exposure method according to claim 16, wherein the plurality of illumination areas of the first projection optical system and the plurality of illumination areas of the second projection optical system pass through the same area on the mask. The magnification of the first and second projection optical systems from the mask to the first and second substrates is at least twice;
The plurality of illumination areas of the first projection optical system and the plurality of illumination areas of the second projection optical system are alternately arranged on the mask in a direction orthogonal to the first direction. Item 17. The exposure method according to Item 16. The first substrate and the second substrate are the same sheet-like member having flexibility,
19. The sheet-like member that has passed through the exposure area of the first projection optical system is changed in direction and passes through the exposure area of the second projection optical system. An exposure method according to 1. A step of exposing the substrate using the exposure method according to any one of claims 1 to 19;
And a step of processing the exposed substrate. An exposure apparatus that exposes a substrate through a pattern provided on a mask,
A mask stage that holds the mask and reciprocates along the scanning direction;
A first projection optical system and a second projection optical system that project images of a first pattern and a second pattern of the patterns onto a first substrate and a second substrate, respectively;
A substrate moving mechanism for respectively moving the first substrate and the second substrate;
A control device for driving the mask stage and the substrate moving mechanism synchronously;
An exposure apparatus comprising: The control device includes:
In the first period during the reciprocating movement of the mask, the mask stage and the substrate moving mechanism are driven to expose the first substrate through the first pattern and the first projection optical system, and the mask and the mask are driven. Moving synchronously with the first substrate,
The mask stage and the substrate moving mechanism are driven to expose the second substrate through the second pattern and the second projection optical system during the second period during the reciprocating movement of the mask, and the mask and The exposure apparatus according to claim 21, wherein the exposure apparatus moves in synchronization with the second substrate.   23. At least one of the first and second projection optical systems includes a shift optical system that shifts the exposure area in a direction intersecting the scanning direction of the mask with respect to the illumination area. Or the exposure apparatus of 22.   The first and second projection optical systems respectively project a plurality of partial projection optics for projecting the image of the pattern in a plurality of illumination regions arranged in a direction intersecting the scanning direction onto the first and second substrates. The exposure apparatus according to any one of claims 21 to 23, further comprising a system. The magnification of the first and second projection optical systems is equal,
25. The exposure apparatus according to claim 24, wherein the plurality of illumination areas of the first projection optical system and the plurality of illumination areas of the second projection optical system pass through the same area on the mask. The magnification of the first and second projection optical systems from the mask to the first and second substrates is at least twice;
The plurality of illumination areas of the first projection optical system and the plurality of illumination areas of the second projection optical system are alternately arranged on the mask in a direction orthogonal to the scanning direction. The exposure apparatus according to 24. When the magnification of the first and second projection optical systems is β,
27. A ratio of a distance from a predetermined reference position of an illumination area and an exposure area of each of the plurality of partial projection optical systems of each of the first and second projection optical systems is 1: β. The exposure apparatus described. The first period is within a period in which the mask is moved in a first direction parallel to the scanning direction;
23. The exposure apparatus according to claim 22, wherein the second period is within a period in which the mask is moved in a direction opposite to the first direction.   29. The exposure apparatus according to claim 28, wherein a moving direction of the first substrate during the first period is opposite to a moving direction of the second substrate during the second period. The first substrate and the second substrate are the same sheet-like member having flexibility,
The substrate moving mechanism is
A supply roll unit that sends the sheet-like member to the exposure area side of the first projection optical system, and the sheet-like member that has passed through the exposure area of the first projection optical system to the exposure area side of the second projection optical system 30. The feeding direction conversion unit, and a winding roll unit that winds up the sheet-like member that has passed through the exposure region of the second projection optical system. Exposure equipment. A step of exposing the substrate using the exposure apparatus according to any one of claims 21 to 30;
And a step of processing the exposed substrate.

Images