JP5425719B2 - Substrate processing apparatus, substrate processing method, and recording medium on which a computer program for executing the substrate processing method is recorded - Google Patents

Description

  The present invention relates to a substrate processing apparatus for processing a substrate, a substrate processing method, and a recording medium on which a computer program for executing the substrate processing method is recorded.

  2. Description of the Related Art Conventionally, there has been known a substrate processing apparatus that performs a cleaning process by immersing a substrate such as a semiconductor wafer (hereinafter simply referred to as a wafer) in an SPM solution (a mixed solution of sulfuric acid and hydrogen peroxide solution) stored in a chemical bath. ing. In such a substrate processing apparatus, a plurality of (for example, 50) wafers are held in a substantially vertical state by a wafer board and immersed in a high-temperature (for example, about 130 ° C.) SPM solution stored in a chemical bath. Thus, organic dirt and metal impurities attached to the wafer are removed. While the wafer is being cleaned, clean air is discharged (down flow) from the fan filter unit (FFU) provided above the chemical tank toward the chemical tank, and the gas vaporized from the chemical rises and diffuses. Is prevented.

JP 2000-164550 A

  However, in such a substrate processing apparatus, when the wafer cleaned with the SPM liquid is pulled up, air discharged from the fan filter unit may flow between the wafers. In this case, the organic matter adhering to the upper end portion of the wafer (specifically, the contact point with the transfer mechanism that transfers the wafer) and dissolved by the high-temperature SPM liquid is affected by the downflow, and is affected on the surface of the wafer. There is a problem that streaky particles are formed.

  The present invention has been made in view of the above, and executes a substrate processing apparatus, a substrate processing method, and this substrate processing method capable of preventing particles from being formed on the surface of the substrate. An object of the present invention is to provide a recording medium in which a computer program for recording is recorded.

  The present invention includes a processing tank that stores a processing liquid and processes a plurality of substrates, and a substrate holding part that is provided so as to be movable up and down relative to the processing tank and that holds the substrate and immerses it in the processing liquid. A processing unit, a gas supply unit that is provided above the processing unit and supplies gas to the processing tank, a detection unit that detects an empty state of the substrate, a storage case that stores the processing tank, and the storage An exhaust unit that is provided in a lower part of the case and exhausts the gas supplied from the gas supply unit; and a control unit that controls the gas supply unit and the exhaust unit. A substrate processing apparatus that controls the gas supply unit and the exhaust unit so as to adjust a flow rate of a gas flowing from the gas supply unit to the exhaust unit based on the detected empty state of the substrate. It is.

  In the substrate processing apparatus according to the present invention, the control unit sets the flow rate of the gas flowing from the gas supply unit to the exhaust unit as a first flow rate when the substrate is processed, and is detected by the detection unit. When the gap between the substrates is calculated based on the empty state of the substrate and the gap between the at least one set of the substrates is within a predetermined range, the processed substrate is raised by the substrate holding unit. The gas supply unit and the exhaust unit may be controlled so that the second flow rate is smaller than the first flow rate.

  In the substrate processing apparatus according to the present invention, a second processing unit that further processes the substrate processed by the processing unit, and the substrate raised by the substrate holding unit from the processing unit to the second processing unit. A transport mechanism for transporting, and when the control unit raises the substrate by the substrate holding unit, the flow rate of the gas flowing from the gas supply unit to the exhaust unit is the second flow rate, When the substrate is transported from the processing unit to the second processing unit by the transport mechanism, the gas supply is performed so that the flow rate of the gas flowing from the gas supply unit to the exhaust unit is the second flow rate. And the exhaust section may be controlled.

  In the substrate processing apparatus according to the present invention, the second processing section is housed in the case, stores a second processing liquid, and processes the substrate, and the second processing tank. A substrate holding unit that receives and holds the substrate and immerses it in a second processing liquid, and the control unit transfers the substrate by the transfer mechanism. When the flow rate of the gas flowing from the gas supply unit to the exhaust unit is the second flow rate, when the substrate is lowered by the gas holding unit of the second processing unit, the exhaust from the gas supply unit The exhaust unit may be controlled from the gas supply unit so that the flow rate of the gas flowing through the unit is the second flow rate.

  In the substrate processing apparatus according to the present invention, when the flow rate of the gas flowing from the gas supply unit to the exhaust unit is the second flow rate, the flow rate of the gas between the substrates is 0.5 m / second or less. May be.

  In the substrate processing apparatus according to the present invention, when the flow rate of the gas flowing from the gas supply unit to the exhaust unit is the second flow rate, the flow rate of the gas between the substrates is set to 0.3 m / second or less. May be.

  The present invention provides a step of holding a plurality of substrates by a substrate holding unit of a processing unit, a step of detecting an empty state of the substrate, and a processing tank of the processing unit in which a processing liquid is stored, by the substrate holding unit. The substrate detected in the step of raising the substrate, comprising the steps of immersing the held substrate in a processing solution and processing, and raising the treated substrate by the substrate holding unit. Based on the empty state, the gas supply unit is provided above the processing tank and supplies a gas to the processing tank. The gas supply unit is provided at a lower part of a storage case that stores the processing tank and is supplied from the gas supply unit. The substrate processing method is characterized in that the flow rate of the gas flowing in the exhaust section for exhausting the gas is adjusted.

  In the substrate processing method according to the present invention, in the step of processing the substrate, the flow rate of the gas flowing from the gas supply unit to the exhaust unit is set to a first flow rate, and the substrate is detected in the step of raising the substrate. The gap between the substrates is calculated based on the vacant state, and when the gap between at least one set of the substrates is in a predetermined range, the flow rate of the gas flowing from the gas supply unit to the exhaust unit is set as the first flow rate. You may make it be the 2nd flow volume smaller than this flow volume.

  In the substrate processing method according to the present invention, in the second processing unit, the substrate processed by the processing unit is further processed, and the substrate holding unit raises the processing unit to the second processing unit. A step of transporting the substrate, and a step of transporting the substrate when the flow rate of the gas flowing from the gas supply unit to the exhaust unit in the step of raising the substrate is the second flow rate. You may make it make the flow volume of the gas which flows into the said exhaust part from the said gas supply part into the said 2nd flow volume.

  In the substrate processing method according to the present invention, a step of lowering the substrate transported from the processing unit by the substrate holding unit of the second processing unit, wherein the substrate is transferred to the second processing tank of the second processing unit. The method further includes the step of immersing the substrate in the stored second processing liquid, and when the flow rate of the gas flowing from the gas supply unit to the exhaust unit in the step of transporting the substrate is the second flow rate, In the step of lowering the substrate, the flow rate of the gas flowing from the gas supply unit to the exhaust unit may be the second flow rate.

  In the substrate processing method according to the present invention, when the gas flows from the gas supply unit to the exhaust unit at the second flow rate, the flow rate of the gas flowing between the substrates may be 0.5 m / second or less. Good.

  In the substrate processing method according to the present invention, when the gas flows from the gas supply unit to the exhaust unit at the second flow rate, the flow rate of the gas flowing between the substrates may be 0.3 m / second or less. Good.

  The present invention is a recording medium on which a computer program for executing a substrate processing method is recorded. The substrate processing method includes a step of holding a plurality of substrates by a substrate holding unit of a processing unit, and an empty space for the substrate. A step of detecting a state, a step of immersing the substrate held by the substrate holder in the treatment tank of the treatment unit in which the treatment liquid is stored, and a process by the substrate holding unit; And raising the substrate, and in the step of raising the substrate, the gas is supplied to the treatment tank provided above the treatment tank based on the detected empty state between the substrates. The flow rate of the gas flowing from the gas supply unit to the exhaust unit for exhausting the gas supplied from the gas supply unit is adjusted. Which is a recording medium to be.

  According to the present invention, it is possible to prevent particles from being formed on the surface of the substrate.

FIG. 1 is a plan view showing the overall configuration of the substrate processing apparatus according to the first embodiment of the present invention. FIG. 2 is a cross-sectional configuration diagram showing a cleaning processing unit of the substrate processing apparatus according to the first embodiment of the present invention. FIG. 3 is a cross-sectional configuration diagram showing the cleaning processing unit of the substrate processing apparatus viewed from a direction different from that in FIG. 2 in the first embodiment of the present invention. FIG. 4 is a diagram showing a flowchart of the substrate processing method according to the first embodiment of the present invention. FIGS. 5A, 5B, and 5C are views for explaining a gas flow between wafers in the second embodiment of the present invention. FIG. 6 is a cross-sectional configuration diagram showing a cleaning processing unit of a substrate processing apparatus as a modification of the second embodiment of the present invention. FIG. 7 is a diagram showing a flowchart of a substrate processing method as a modification of the second embodiment of the present invention. FIG. 8 is a front view showing measurement points of the flow velocity of air between wafers in the embodiment of the present invention.

  Embodiments of the present invention will be described below with reference to the drawings.

First Embodiment First, a first embodiment of the present invention will be described with reference to FIGS. 1 to 4 are diagrams for explaining an embodiment of a substrate processing apparatus, a substrate processing method, and a recording medium on which a computer program for executing the substrate processing method is recorded in the first embodiment. FIG.

  First, the overall configuration of the substrate processing apparatus 1 will be described.

  As shown in FIG. 1, the substrate processing apparatus 1 carries in and out a storage container 100 in which a wafer W is stored, and also performs a cleaning process on the storage container carrying-in / out unit 2 to be stored and a predetermined chemical solution on the wafer W. An interface for transporting the wafer W between the cleaning processing unit 3 to be performed, a drying processing unit 4 for drying the wafer W after the cleaning processing, and the storage container loading / unloading unit 2, the cleaning processing unit 3 and the drying processing unit 4. Part 5. Among these, the drying processing unit 4 is disposed between the interface unit 5 and the cleaning processing unit 3. Here, the storage container 100 described above has a plurality of storage portions (not shown) each storing a single wafer W in a substantially horizontal direction, and these storage portions are arranged in the vertical direction. Are provided at predetermined intervals. Further, one side of the storage container 100 is a loading / unloading port for the wafer W.

  The storage container loading / unloading unit 2 includes a storage container loading / unloading stage 2a for placing the storage containers 100 so as to be arranged in the vertical direction, a wafer loading / unloading stage 2b for transferring the wafer W to / from the storage container 100, and a storage container loading / unloading stage. A storage container transport device 2c that transports the storage container 100 between the take-out stage 2a and the take-in / out stage is provided. In addition, the storage container carry-in / out section 2 is provided with a storage container stock section 2 d for storing the storage container 100.

  The storage container loading / unloading section 2 and the interface section 5 are partitioned by a wall section 6, and openings 6a are formed in two upper and lower stages at positions corresponding to the wafer loading / unloading stage 2b of the wall section 6. Of these, the lower opening 6a is used for unloading the wafer W before the cleaning process from the storage container 100, and the upper opening 6a carries the wafer W after the cleaning process into the storage container 100. It is intended for carrying in wafers.

  Near the opening 6a on the lower side of the interface unit 5, there is provided a first detection unit 7 for detecting an empty state of the wafer W before the cleaning process in the storage container 100 on the wafer loading / unloading stage 2b. The first detection unit 7 has a sensor portion including at least a pair of light emitting elements and light receiving elements, and the sensor portion scans the wafer W stored in each storage portion of the storage container 100 to store the storage container. It is detected whether or not 100 wafers W are empty, that is, whether or not the wafers W are stored in the storage portions, and the storage states of the wafers W stored in the storage portions, for example, the wafers W are stored obliquely. Whether it is not or not is detected.

  Further, in the vicinity of the opening 6 a on the upper side of the interface unit 5, a second detection unit 8 that detects the wafer W after the cleaning process in the storage container 100 on the wafer loading / unloading stage 2 b is provided. The second detection unit 8 includes a sensor portion including at least a pair of light emitting elements and light receiving elements, and the sensor portion scans the wafer W stored in each storage portion of the storage container 100 to store the storage container. It is detected whether the 100 wafers W are empty, that is, whether or not the wafers W are stored in the respective storage portions.

  The interface unit 5 is provided with a wafer transfer device 9 for transferring the wafer W. The wafer transfer device 9 moves along a guide rail 9 a extending from the interface unit 5 through the drying processing unit 4 to the cleaning processing unit 3. It is configured to be possible. The interface unit 5 is provided with a wafer transfer device 5a for transferring the wafer W between the wafer loading / unloading stage 2b and the wafer transfer device 9. The wafer transfer device 5 a is configured to transfer the wafer W to the storage container 100 in a substantially horizontal state and to transfer the wafer W to the wafer transfer device 9 in a substantially vertical state.

  Next, the cleaning processing unit 3 of the substrate processing apparatus will be described in detail.

  That is, as shown in FIGS. 2 and 3, the cleaning processing unit 3 of the substrate processing apparatus 1 is a chemical processing unit (processing unit) that performs chemical processing on a plurality of substrates (for example, semiconductor wafers, hereinafter simply referred to as wafers W). 10, a rinsing processing unit (second processing unit) 20 that performs rinsing processing on the wafer W that has been subjected to chemical processing, and an intra-unit transport mechanism (transporting mechanism) that transports the wafer W from the chemical processing unit 10 to the rinsing processing unit 20. 50.

Among these, the chemical processing unit 10 stores a high-temperature (about 130 ° C.) chemical (processing liquid, SPM liquid) and performs chemical processing on the wafer W (processing tank) 11. And a wafer board (substrate holding part) 12 for holding the wafer W in a substantially vertical state and immersing it in a chemical solution. Among these, the wafer board 12 has a plurality of grooves (not shown), and the wafer W is engaged with each groove to hold the wafer W in a substantially vertical state. The SPM solution refers to a solution in which sulfuric acid (H ₂ SO ₄ ) and hydrogen peroxide solution (H ₂ O ₂ ) are mixed at a predetermined concentration.

  The chemical tank 11 includes an inner tank 11a for storing the chemical liquid and an outer tank 11b provided around the inner tank 11a and receiving the chemical liquid overflowing from the inner tank 11a. Among them, the inner tank 11a is connected to a sulfuric acid supply unit and a hydrogen peroxide solution supply unit (not shown), and the chemical solution overflowed to the outer tank 11b is returned to the inner tank 11a between the outer tank 11b and the inner tank 11a. A circulation line (not shown) is connected. The inner tank 11 a is provided with a heater (not shown) for heating the stored chemical solution, and this heater is connected to the control unit 60.

  A board driving unit 13 is connected to the wafer board 12 of the chemical processing unit 10 so that the wafer board 12 is raised and lowered. The board driving unit 13 is connected to a control unit 60 described later, and is driven based on a control signal from the control unit 60.

  As shown in FIG. 2, the rinsing processing unit 20 stores a rinsing liquid (second processing liquid, for example, pure water), and rinses the wafer W (second processing tank) 21. A wafer board 22 is provided so as to be movable up and down with respect to the rinsing tank 21 and holds the wafer W in a substantially vertical state and is immersed in a rinsing liquid.

  The rinsing tank 21 includes an inner tank 21a for storing a rinsing liquid and an outer tank 21b provided around the inner tank 21a and receiving a rinsing liquid overflowing from the inner tank 21a. Among them, a rinsing liquid supply unit (not shown) is connected to the inner tank 21a, and a circulation line (not shown) for returning the rinsing liquid overflowed to the outer tank 21b to the inner tank 21a between the outer tank 21b and the inner tank 21a. Are connected).

  A board driving unit 23 is connected to the wafer board 22 of the rinsing processing unit 20 so that the wafer board 22 moves up and down. The board driving unit 23 is connected to the control unit 60 and is driven based on a control signal from the control unit 60.

  The chemical tank 11 and the rinse tank 21 are housed in the housing case 30. A lower part of the housing case 30 is provided with a first exhaust part (exhaust part) 31 for exhausting air supplied from a fan filter unit 40 described later. The first exhaust unit 31 includes a first exhaust line 32 connected to a lower portion of the housing case 30, and a first exhaust that is provided in the first exhaust line 32 and adjusts the flow rate of air passing through the first exhaust line 32. And an on-off valve 33. Among these, the 1st exhaust on-off valve 33 is connected to the control part 60, and the opening degree is adjusted by the control part 60.

  A fan filter unit (gas supply unit, FFU) 40 that supplies clean air as a downflow to the chemical solution tank 11 is provided above the chemical solution processing unit 10 and the rinse processing unit 20. The clean air (gas) supplied from the fan filter unit 40 is discharged toward the upper side of the chemical solution stored in the chemical solution tank 11, flows in the storage case 30, and is exhausted to the first exhaust unit 31. It is like that. In this way, the gas evaporated and evaporated from the chemical solution is guided to the first exhaust unit 31 together with the clean air supplied from the fan filter unit 40, and the gas evaporated from the chemical solution is prevented from rising and diffusing. doing. The clean air discharged from the fan filter unit 40 is also discharged toward the upper side of the rinsing liquid stored in the rinsing tank 21, and is transferred to the rinsing processing unit 20 to the wafer W before the rinsing process. The gas vaporized from the remaining chemical liquid flows in the housing case 30 together with the clean air supplied from the fan filter unit 40 and is exhausted to the first exhaust part 31, and the gas vaporized from the chemical liquid rises and diffuses. To prevent it. The fan filter unit 40 is connected to the control unit 60, and the control unit 60 controls the flow rate of the discharged clean air.

  The intra-unit transport mechanism 50 includes a transport arm 51 and a transport driving unit 52 that drives the transport arm 51. Among these, the conveyance drive part 52 is covered with the box 53 arrange | positioned on the outer side of the storage case 30, and the conveyance arm 51 is extended above the chemical | medical solution tank 11 or the rinse tank 21 from the box 53. FIG. A part of the air discharged from the fan filter unit 40 also flows into the box 53. The air flowing into the box 53 is exhausted by a second exhaust part 54 provided at the lower part of the box 53. The second exhaust part 54 is provided in the second exhaust line 55 connected to the lower part of the box 53, and the second exhaust line 55 is provided in the second exhaust line 55 to adjust the flow rate of air passing through the second exhaust line 55. And a valve 56. The transport driving unit 52 and the second exhaust opening / closing valve 56 are connected to the control unit 60 and controlled by the control unit 60.

  As described above, the control unit 60 that controls these components is connected to the fan filter unit 40 and the first exhaust opening / closing valve 33. The control unit 60 sets the flow rate of air flowing from the fan filter unit 40 to the first exhaust unit 31 as the first flow rate when the wafer W is subjected to the chemical solution processing, and the chemical solution processed wafer W is processed into the chemical solution processing unit. When the 10 wafer boards 12 are raised, the fan filter unit 40 and the first exhaust opening / closing valve 33 are controlled so that the second flow rate is smaller than the first flow rate.

  Further, as shown in FIG. 1, the cleaning processing unit 3 includes chemical processing units 3a and 3d, rinse processing units 3b and 3e for cleaning the wafer W using other chemicals, and an in-unit transfer mechanism 3c. 3f.

  The drying processing unit 4 is provided in a chuck cleaning mechanism for cleaning the chuck of the wafer transfer device 9, a water rinsing tank for rinsing the cleaned wafer W, and an isopropyl alcohol (IPA) vapor, for example. A drying chamber (not shown) for drying the supplied and washed wafer W and an in-unit transfer mechanism for transferring the wafer W between the washing tank and the drying chamber are provided.

  As shown in FIG. 2, when the wafer W is transferred from the chemical solution processing unit 10 to the rinse processing unit 20 by the in-unit transfer mechanism 50, the control unit 60 moves the air flowing from the fan filter unit 40 to the first exhaust unit 31. The fan filter unit 40 and the first exhaust opening / closing valve 33 are controlled so that the flow rate is the second flow rate described above.

  Furthermore, the control unit 60 also holds the wafer W transferred by the in-unit transfer mechanism 50 by the wafer board 22 of the rinse processing unit 20 and descends the fan W from the fan filter unit 40 to the first of the chemical processing unit 10. The fan filter unit 40 and the first exhaust opening / closing valve 33 are controlled so that the flow rate of the air flowing through the exhaust unit 31 is maintained at the second flow rate described above.

  Specifically, the control unit 60 adjusts both (or one) of the flow rate of the air discharged from the fan filter unit 40 and the opening degree of the first exhaust opening / closing valve 33 of the chemical treatment unit 10, and thereby the fan filter. The flow rate of the air flowing from the unit 40 to the first exhaust part 31 is controlled.

  When the flow rate of air flowing from the fan filter unit 40 to the first exhaust unit 31 is the second flow rate, the flow rate of air between the wafers W held by the chemical processing unit 10 is 0.5 m / sec. Hereinafter, it is particularly preferably 0.3 m / sec or less.

  By the way, as shown in FIG. 2, in order to manage the substrate processing apparatus 1 by the process manager or the like, the control unit 60 visualizes a keyboard for performing a command input operation or the like, an operation status of the substrate processing apparatus 1, and the like. An input / output device 61 comprising a display or the like for display is connected. Further, the control unit 60 can access a recording medium 62 in which a program for realizing processing executed by the substrate processing apparatus 1 is recorded. The recording medium 62 can be configured from a known recording medium 62 such as a memory such as a ROM and a RAM, a disk-shaped recording medium such as a hard disk, a CD-ROM, a DVD-ROM, and a flexible disk. In this way, the processing of the wafer W is performed in the substrate processing apparatus 1 by the control unit 60 executing a program or the like recorded in advance on the recording medium 62.

  Next, the operation of the present embodiment having such a configuration, that is, the substrate processing method according to the present embodiment will be described. The operation of each component for executing the substrate processing method described below is controlled by a control signal from the control unit 60 based on a program recorded in the recording medium 62 in advance.

  First, as shown in FIG. 1, the storage container 100 in which a plurality of wafers W are stored in a substantially horizontal state by the storage portion is placed on the storage container carry-in / out stage 2a. The storage container 100 placed on the storage container loading / unloading stage 2a is transferred to the loading / unloading stage 2b for loading by the storage container transfer device 2c. Next, with respect to the storage container 100 placed on the wafer loading / unloading stage 2b, the first detection unit 7 detects the wafer W in the storage container 100 through the opening 6a on the lower side of the wall part 6.

  Thereafter, the wafer transfer device 5a transfers the wafer W from the storage container 100 on the wafer loading / unloading stage 2b to the wafer transfer device 9.

  The wafer transfer apparatus 9 that has received the wafer W moves along the guide rail 9 a to the position of the chemical tank 11 of the cleaning processing unit 3, and the wafer W is transferred to the in-unit transfer mechanism 50 of the cleaning processing unit 3. However, as will be described later, the cleaning process is performed. Thereafter, the wafers W are sequentially cleaned by the chemical solution processing units 3a and 3d and the rinse processing units 3b and 3e.

  The wafer W that has been subjected to the cleaning process is transferred to the drying processing unit 4 by the wafer transfer device 9 and dried. Thereafter, the wafer is returned to the interface unit 5 by the wafer transfer device 9.

  In the interface unit 5, the wafer transfer device 5 a delivers the wafer W from the wafer transfer device 9 to the empty storage container 100 mounted on the wafer loading / unloading stage 2 b, and the second detection unit 8 detects the wafer W. Done.

  Thereafter, the storage container 100 on the wafer loading / unloading stage 2b is transferred to the storage container loading / unloading stage 2a by the storage container transfer device 2c.

  Next, a method for processing the wafer W in the chemical processing unit 10 and the rinse processing unit 20 of the cleaning processing unit 3 will be described.

  In this case, first, as shown in FIG. 4, clean air is discharged from the fan filter unit 40 toward the chemical solution tank 11 and the rinse tank 21 (step S1). At this time, the fan filter unit 40 is driven so that the flow rate of air flowing from the fan filter unit 40 to the first exhaust unit 31 becomes the first flow rate (normal flow rate), and the first exhaust unit 31 The opening degree of the first exhaust opening / closing valve 33 is adjusted. A part of the air discharged from the fan filter unit 40 flows into a box 53 provided outside the housing case 30, but the opening degree of the second exhaust opening / closing valve 56 is adjusted by the control unit 60, The air is exhausted through the second exhaust line 55.

  After the flow rate of the air flowing from the fan filter unit 40 to the first exhaust unit 31 is stabilized at the first flow rate, the chemical solution is stored in the chemical solution tank 11 of the chemical solution processing unit 10, and also in the rinse tank 21 of the rinse treatment unit 20. The rinse liquid is stored (step S2). In this case, sulfuric acid and hydrogen peroxide solution are supplied from a sulfuric acid supply unit and a hydrogen peroxide solution supply unit (not shown) to the inner tank 11a of the chemical solution tank 11 so as to be mixed at a predetermined concentration. At this time, sulfuric acid and hydrogen peroxide solution are supplied from the inner tank 11 a of the chemical tank 11 to the outer tank 11 b until they overflow and are heated by a heater (not shown) provided in the chemical tank 11. Thereafter, during the following steps, the sulfuric acid and hydrogen peroxide solution stored in the inner tank 11a of the chemical tank 11 are maintained at a predetermined concentration. Moreover, the rinse liquid is supplied to the inner tank 21a of the rinse tank 21 from a rinse liquid supply unit (not shown) until the overflow from the inner tank 21a of the rinse tank 21 to the outer tank 21b.

  Next, the plurality of wafers W transferred by the in-unit transfer mechanism 50 are delivered to and held by the wafer board 12 of the chemical processing unit 10 (step S3).

  After the wafer W is held on the wafer board 12 of the chemical processing unit 10, the board driving unit 13 of the chemical processing unit 10 is driven, and the wafer board 12 holding the wafer W is lowered (step S4).

  As the wafer board 12 is lowered, the wafer W held by the wafer board 12 is immersed in the chemical solution in the chemical solution tank 11 of the chemical solution processing unit 10 in which the chemical solution is stored, and the chemical solution processing is performed for a predetermined time (step S5). ). In steps S2 to S5 described above, the flow rate of air flowing from the fan filter unit 40 to the first exhaust unit 31 is maintained at the first flow rate.

  Next, the flow rate of the air discharged from the fan filter unit 40 and the first exhaust so that the flow rate of the air flowing from the fan filter unit 40 to the first exhaust unit 31 becomes a second flow rate smaller than the first flow rate. The opening degree of the first exhaust on-off valve 33 of the unit 31 is adjusted. As a result, the flow rate of air flowing from the fan filter unit 40 to the first exhaust part 31 is reduced (step S6). In addition, it is preferable to perform this step S6 immediately before the chemical | medical solution process of the wafer W in step S5 mentioned above is complete | finished, for example, 1 minute before completion | finish. Thus, the flow rate of the air flowing from the fan filter unit 40 to the first exhaust part 31 can be stabilized before raising the wafer W in step S7 described later.

  Thereafter, the board driving unit 13 of the chemical processing unit 10 is driven, and the wafer W that has been subjected to the chemical processing rises (step S7).

  Next, the wafer W raised by the wafer board 12 of the chemical solution processing unit 10 is transferred to the in-unit transfer mechanism 50 and transferred from the chemical solution processing unit 10 to the rinse processing unit 20 (step S8).

  The wafer W transferred to the rinse processing unit 20 by the in-unit transfer mechanism 50 is transferred to and held by the wafer board 22 of the rinse processing unit 20 (step S9).

  After the wafer W is held on the wafer board 22 of the rinse processing unit 20, the board drive unit 23 of the rinse processing unit 20 is driven, and the wafer board 22 holding the wafer W is lowered (step S10).

  When the wafer board 22 is lowered, the wafer W held by the wafer board 22 is immersed in the rinse liquid in the rinse tank 21 of the rinse processing unit 20 in which the rinse liquid is stored, and is rinsed for a predetermined time ( Step S11). In steps S7 to S11 described above, the flow rate of the air flowing from the fan filter unit 40 to the first exhaust unit 31 is maintained at the second flow rate.

  Here, after the entire wafer W is immersed in the rinsing liquid, the flow rate of air discharged from the fan filter unit 40 is set so that the flow rate of air flowing from the fan filter unit 40 to the first exhaust unit 31 becomes the first flow rate. The flow rate and the opening degree of the first exhaust opening / closing valve 33 of the first exhaust part 31 are adjusted. As a result, the flow rate of air flowing from the fan filter unit 40 to the first exhaust part 31 returns to the normal first flow rate (step S12).

  After the rinsing process for the wafer W is completed, the board driving unit 23 of the rinsing process unit 20 is driven to raise the rinsed wafer W (step S13). During this time, the flow rate of the air flowing from the fan filter unit 40 to the first exhaust part 31 is maintained at the first flow rate.

  Thereafter, the wafer W lifted by the wafer board 22 of the rinse processing unit 20 is transferred to the in-unit transfer mechanism 50 and transferred to a downstream process.

  By repeating the above-described steps, a plurality of wafers W can be sequentially subjected to chemical treatment, rinse treatment, and cleaning.

  As described above, according to the present embodiment, the flow rate of the air flowing from the fan filter unit 40 to the first exhaust unit 31 when the chemical-treated wafer W is pulled up from the chemical solution is determined from the flow rate when the wafer W is subjected to the chemical treatment. Can be small. As a result, the flow velocity of air flowing between the wafers W can be reduced, and dissolved organic matter hangs down on the wafer surface from the upper end portion of the wafers W due to the downflow, and particles are formed. This can be prevented.

  In addition, according to the present embodiment, when the chemical-treated wafer W is transferred from the chemical treatment unit 10 to the rinse treatment unit 20 and is lowered toward the rinse tank 21 by the wafer board 22 of the rinse treatment unit 20. Even in this case, the flow rate of air flowing from the fan filter unit 40 to the first exhaust unit 31 can be made smaller than the flow rate when the wafer W is subjected to the chemical treatment. Thus, the flow velocity of the air flowing between the wafers W can be reduced until the chemical-treated wafer W is rinsed, and particles are prevented from being formed on the surface of the wafer W. Can do.

Second Embodiment Next, referring to FIG. 5, a substrate processing apparatus, a substrate processing method, and a recording medium on which a computer program for executing the substrate processing method is recorded according to a second embodiment of the present invention will be described. explain. FIG. 5 is a diagram for explaining an embodiment of a substrate processing apparatus, a substrate processing method, and a recording medium on which a computer program for executing the substrate processing method is recorded in the second embodiment. It is.

  The second embodiment shown in FIG. 5 is mainly different in that the flow rate of air flowing from the fan filter unit to the first exhaust unit is adjusted based on the empty state of the wafer detected by the detection unit. The configuration is substantially the same as that of the first embodiment shown in FIGS. In FIG. 5, the same parts as those of the first embodiment shown in FIGS. 1 to 4 are denoted by the same reference numerals, and detailed description thereof is omitted.

  In the present embodiment, the first detection unit (detection unit) 7 detects an empty state of the wafer W before the cleaning process stored in the storage container 100 on the wafer loading / unloading stage 2b, and the detected wafer W is detected. The flow rate of the air flowing from the fan filter unit 40 to the first exhaust part 31 is adjusted based on the empty state.

  That is, the control unit 60 calculates a gap (dimension x in FIG. 5) between the wafers W held on the wafer board 12 based on the empty state of the wafers W detected by the first detection unit 7. When the gap between at least one set of wafers W is in a predetermined range, the flow rate of air flowing from the fan filter unit 40 to the first exhaust unit 32 when the wafer W processed with the chemical solution is raised by the wafer board 12, The flow rate of air discharged from the fan filter unit 40 and the first exhaust opening / closing valve 33 of the first exhaust unit 31 are set to a second flow rate that is smaller than the flow rate (first flow rate) when the wafer W is processed with the chemical solution. To control.

  Here, as shown in FIG. 5A, for example, when 50 wafers W are held on the wafer board 12 capable of holding 50 wafers W, gaps between the wafers W (in this case, x = 3 mm) is relatively small. For this reason, the air discharged from the fan filter unit 40 hardly flows between the wafers W, and the flow velocity of the air between the wafers W is reduced. For this reason, the influence of the downflow is reduced and particles are hardly formed on the surface of the wafer W. On the other hand, as shown in FIG. 5B, for example, when 25 wafers W are held on the wafer board 12 at substantially equal intervals, gaps between the wafers W (in this case, x = 6 mm). ) Is relatively large. For this reason, the air discharged from the fan filter unit 40 easily flows between the wafers W, and the dissolved organic matter remaining on the upper end of the wafer W is affected by the downflow, and thus is on the surface of the wafer W. Particles are easily formed on the surface. However, as shown in FIG. 5C, for example, when only one wafer W is held on the wafer board 12 described above, a large space is formed around the wafer W, and therefore the fan filter unit. The air discharged from 40 flows away from the wafer W. For this reason, the influence of the downflow is reduced, and particles are hardly formed on the surface of the wafer W.

  Accordingly, when the control unit 60 raises the wafer W that has been subjected to the chemical treatment when the gap between at least one pair of wafers W is within a predetermined value range (for example, 6 mm or more), the fan filter unit 40 It is effective to set the flow rate of the air flowing through the first exhaust part 31 to a second flow rate smaller than the first flow rate described above. On the other hand, when the gap between the wafers W is not included in the predetermined range, the flow rate of air flowing from the fan filter unit 40 to the first exhaust unit 31 is increased even when the chemical-treated wafer W is raised. The first flow rate can be maintained, and gas vaporized from the chemical solution can be prevented from rising and diffusing.

  As described above, according to the present embodiment, when the wafer W that has been subjected to the chemical solution treatment is lifted when the gap between the wafers W is within the predetermined range described above, the fan filter unit 40 moves to the first exhaust unit 31. The flow rate of the flowing air can be made smaller than the flow rate when the wafer W is subjected to the chemical treatment. Thus, only when the air from the fan filter unit 40 flows as a downflow between the wafers W, the flow rate can be reduced and particles can be prevented from being formed on the surface of the wafer W. On the other hand, when the gap between the wafers W is not included in the predetermined range described above, the air flowing from the fan filter unit 40 to the first exhaust unit 31 even when the chemical-treated wafer W is raised. The flow rate can be maintained at a normal flow rate (first flow rate), and gas vaporized from the chemical solution can be prevented from rising and diffusing.

  In the present embodiment, the first detection unit 7 detects the empty state of the wafer W before the cleaning process stored in the storage container 100 on the wafer loading / unloading stage 2b, and the detected wafer W is detected. The example in which the flow rate of the air flowing from the fan filter unit 40 to the first exhaust part 31 is adjusted based on the empty state has been described. However, the present invention is not limited to this, and the third detection unit 70 may be provided above the chemical tank 11 as a detection unit for detecting the empty state of the wafer W as shown in FIG. That is, a third detection unit 70 that detects the empty state of the wafer W held on the wafer board 12 of the chemical solution processing unit 10 is provided above the chemical solution tank 11, and the control unit 60 includes the third detection unit. The gaps between the wafers W are calculated based on the free state of the wafers W detected by 70, and when the gaps between at least one pair of wafers W are within a predetermined range, The fan filter unit 40 and the first exhaust unit 31 are controlled such that the flow rate of the air flowing from the fan filter unit 40 to the first exhaust unit 31 when being raised by the board 12 is the second flow rate. The third detection unit 70 has a sensor portion composed of at least a pair of light emitting elements and light receiving elements, like the first detection unit 7 described above, and this sensor portion is held on the wafer board 12. The wafer W is scanned to detect whether the wafer W is empty, that is, whether or not the wafer W is engaged with each groove (not shown) of the wafer board 12.

  In this case, as shown in FIG. 7, after the wafer W is held on the wafer board 12 of the chemical processing unit 10 in step S3, the empty state of the held wafer W is detected by the third detection unit 70. (Step 21). Thereafter, the wafer board 12 is lowered to perform chemical treatment (steps S4 and S5).

  Next, the gap between the wafers W is calculated based on the empty state of the wafers W detected in step S21. If the calculated gap between the wafers W is within a predetermined range, the fan filter unit The flow rate of the air discharged from the fan filter unit 40 and the first exhaust of the first exhaust unit 31 so that the flow rate of the air flowing from the 40 to the first exhaust unit 31 becomes a second flow rate smaller than the first flow rate. The opening degree of the on-off valve 33 is adjusted. As a result, the flow rate of air flowing from the fan filter unit 40 to the first exhaust part 31 is reduced (step S22). In addition, it is preferable to perform this step S22 just before the chemical | medical solution process of the wafer W in step S5 mentioned above is complete | finished, for example, 1 minute before completion | finish. Thus, the flow rate of air flowing from the fan filter unit 40 to the first exhaust part 31 can be stabilized before the wafer W is raised in step S7. Thereafter, the wafer board 12 is raised (step S7).

  If the flow rate of the air flowing from the fan filter unit 40 to the first exhaust unit 31 in step S22 is the second flow rate, the fan filter unit 40 is immersed in the rinse liquid in step S11 after the entire wafer W is immersed in the rinse liquid. The flow rate of air discharged from the fan filter unit 40 and the opening degree of the first exhaust opening / closing valve 33 of the first exhaust portion 31 are adjusted so that the flow rate of air flowing from the fan to the first exhaust portion 31 becomes the first flow rate. Is done. As a result, the flow rate of air flowing from the fan filter unit 40 to the first exhaust part 31 returns to the normal first flow rate (step S23).

  As mentioned above, although embodiment by this invention has been described, naturally, various deformation | transformation are also possible within the range of the summary of this invention. Hereinafter, typical modifications will be described.

  In the present embodiment, the example in which the chemical solution tank 11 and the rinse tank 21 are accommodated in one accommodation case 30 has been described. However, the present invention is not limited to this, and the chemical solution tank 11 and the rinse tank 21 may be stored in separate storage cases 30. That is, the chemical tank 11 is accommodated in the chemical tank storage case, and a chemical tank exhaust for exhausting air is provided in the lower part of the chemical tank storage case. The chemical tank exhaust is used for the chemical tank. A rinsing tank exhaust section for exhausting air to the lower portion of the rinsing tank storage case is provided with an exhaust line and a chemical tank exhaust opening / closing valve. The rinsing tank exhaust section may have a rinsing tank exhaust line and a rinsing tank exhaust opening / closing valve (both not shown). In this case, the control unit 60 controls the flow rate of air discharged from the fan filter unit 40 to the chemical solution tank in order to control the flow rate of air flowing from the fan filter unit 40 to the chemical solution tank exhaust unit and the rinse tank exhaust unit. The opening degree of the exhaust opening / closing valve and the opening degree of the rinsing tank exhaust opening / closing valve may be adjusted.

  In the present embodiment, the example in which the wafer W that has been subjected to the chemical treatment with the SPM solution as the chemical solution is rinsed in the rinse treatment unit 20 as the second treatment unit has been described. However, the second processing unit is not limited to the rinse processing unit 20 and may be a processing unit that further performs chemical processing on the wafer W with another chemical solution different from the SPM solution.

  Further, in the present embodiment, the example in which the wafer W is subjected to the chemical treatment using the high-temperature SPM solution stored in the chemical bath 11 has been described. However, the present invention is not limited to this, and the present invention can also be applied to the case where another chemical solution is stored in the chemical solution tank 11 and the wafer W is processed with the chemical solution.

  In the above description, the substrate processing method according to the present invention, the recording medium 62 on which the computer program for executing the substrate processing method is recorded, and the substrate processing apparatus 1 are applied to the chemical processing of the semiconductor wafer W. An example is shown. However, the present invention is not limited to this, and the present invention can also be applied to chemical processing of various substrates such as an LCD substrate or a CD substrate.

  The relationship between the flow rate of air between the wafers W and the presence or absence of formation of particles on the surface of the wafers W was examined.

  That is, in order to measure the flow velocity of air between the wafers W near the center among the wafers W held on the wafer board 12, three flow velocity measurement points P1, P2, and P3 are provided as shown in FIG. It was. In this case, the gap x between the wafers W (see FIG. 5) is 6 mm, and 25 wafers W are arranged at substantially equal intervals on the wafer board 12 capable of holding 50 wafers W at maximum. It corresponds to the case.

  When the flow rate of air flowing from the fan filter unit 40 to the first exhaust unit 31 is the first flow rate and the second flow rate, the flow velocity of air at each measurement point P1, P2, P3 is measured, and each point P1 , Whether or not particles are formed on the surface of the wafer W in the vicinity of P2, P3. The results are shown in Table 1. In addition, although not shown here, exhaust portions are respectively provided in the chemical treatment unit 10 and the rinse treatment unit 20 adjacent on the measurement point P1 side, and the opening degree of the exhaust on-off valve of the rinse treatment unit 20 becomes small. As a result, the air discharged from the portion of the fan filter unit 40 on the side of the rinsing section 20 flows into the chemical solution tank 11, and as a result, the air flow velocity at P <b> 1 becomes the air flow at P <b> 2 and P <b> 3. It is larger than the flow velocity. Further, the measurement was performed in a state where substantially the lower half of the wafer W was immersed in a chemical solution as shown in FIG.

  As shown in Table 1, when the flow velocity of the air between the wafers W is 0.61 m / sec at the measurement point P1, it is affected by the downflow, and from the upper end of the wafer W, It was confirmed that the dissolved organic matter hangs down on the surface of the wafer W to form particles. This prevents the formation of particles on the surface of the wafer W by setting the air flow rate between the wafers W to at least 0.5 m / second or less, preferably 0.3 m / second or less. It can be said that it is possible. In the present embodiment, as shown in FIG. 8, the flow rate of air between the wafers W is measured in a state in which the substantially lower half of the wafer W is immersed in the chemical solution, but the immersion of the wafer W in the chemical solution is performed. Regardless of the state and the presence / absence of immersion, the air flow rate is preferably 0.5 m / second or less, particularly 0.3 m / second or less over the entire region between the wafers W.

DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 2 Storage container carrying in / out part 2a Storage container carrying in / out stage 2b Wafer loading / unloading stage 2c Storage container transfer apparatus 2d Storage container stock part 3 Cleaning processing unit 3a, 3d Chemical solution processing part 3b, 3e Rinse processing part 3c, 3f unit Inner transfer mechanism 4 Drying processing unit 4a Chuck cleaning mechanism 4b Flushing tank 4c In-unit transfer mechanism 5 Interface unit 5a Wafer transfer device 6 Wall portion 6a Opening 7 First detection unit 8 Second detection unit 9 Wafer transfer device 9a Guide Rail 10 Chemical solution processing section 11 Chemical solution tank 11a Inner tank 11b Outer tank 12 Wafer board 13 Board drive unit 20 Rinse processing unit 21 Rinse tank 21a Inner tank 21b Outer tank 22 Wafer board 23 Board drive unit 30 Housing case 31 First exhaust unit 32 First exhaust line 33 First exhaust on-off valve 40 Fan filter unit DOO 50 unit transfer mechanism 51 transfer arm 52 transfer drive 53 Box 54 second exhaust unit 55 second exhaust line 56 second discharge opening and closing valve 60 the control unit 61 input-output device 62 recording medium 70 third detection unit 100 container

Claims (11)

And storing the drug solution, the treatment tank a plurality of substrates to chemical treatment, vertically movable mounted with respect to the processing tank, a processing unit and a substrate holder which is immersed in a drug solution while holding the substrate ,
A gas supply unit provided above the processing unit and configured to supply gas to the processing tank;
A detection unit for detecting an empty state of the substrate;
A storage case for storing the treatment tank;
An exhaust part that is provided at a lower part of the housing case and exhausts the gas supplied from the gas supply part;
A control unit for controlling the gas supply unit and the exhaust unit,
The control unit controls the gas supply unit and the exhaust unit so as to adjust the flow rate of the gas flowing from the gas supply unit to the exhaust unit based on the empty state of the substrate detected by the detection unit. And
The control unit sets the flow rate of the gas flowing from the gas supply unit to the exhaust unit as a first flow rate when the substrate is subjected to a chemical treatment, and sets the empty state of the substrate detected by the detection unit. A gap between the substrates is calculated based on the first flow rate when the substrate treated with the chemical solution is raised by the substrate holding unit when the gap between the substrates in a pair is within a predetermined range. The substrate processing apparatus , wherein the gas supply unit and the exhaust unit are controlled to have a smaller second flow rate . A second processing unit for further processing the substrate that has been subjected to chemical treatment by the processing unit;
A transport mechanism for transporting the substrate raised by the substrate holding unit from the processing unit to the second processing unit;
When the flow rate of the gas flowing from the gas supply unit to the exhaust unit when the substrate holding unit raises the substrate by the substrate holding unit is set to the second flow rate, the control unit causes the transfer mechanism to move the first unit from the processing unit. Controlling the gas supply unit and the exhaust unit so that the flow rate of the gas flowing from the gas supply unit to the exhaust unit is the second flow rate when the substrate is transported to the second processing unit. The substrate processing apparatus according to claim 1 , wherein: The second processing unit is housed in the case, stores a second processing liquid, and is provided so as to be movable up and down with respect to the second processing tank and the second processing tank for processing the substrate. Receiving and holding the substrate, and having a substrate holding part immersed in the second treatment liquid,
The controller holds the gas in the second processing unit when the flow rate of the gas flowing from the gas supply unit to the exhaust unit when the substrate is transferred by the transfer mechanism is the second flow rate. When the substrate is lowered by the unit, the exhaust unit is controlled from the gas supply unit so that the flow rate of the gas flowing from the gas supply unit to the exhaust unit becomes the second flow rate. The substrate processing apparatus according to claim 2 . If the flow rate of the gas flowing through the exhaust part from the gas supply unit is the second flow rate, the flow velocity of the gas between the substrates, claims 1 to 3, characterized in that 0.5 m / sec The substrate processing apparatus according to any one of the above. If the flow rate of the gas flowing through the exhaust part from the gas supply unit is the second flow rate, the flow velocity of the gas between the substrate, according to claim 4, characterized in that at most 0.3 m / sec Substrate processing equipment. A step of holding a plurality of substrates by a substrate holder of the processing unit;
Detecting an empty state of the substrate;
In the processing tank of the processor the drug liquid is stored, the substrate held by the substrate holding portion is immersed in chemical liquid, a step of chemical treatment,
A step of raising the substrate treated with a chemical by the substrate holding part,
In the step of raising the substrate, a housing case that houses the processing tank from a gas supply unit that is provided above the processing tank and supplies gas to the processing tank based on the detected empty state of the substrate The flow rate of the gas flowing through the exhaust part for exhausting the gas supplied from the gas supply part is adjusted ,
In the step of chemical treatment of the substrate, the flow rate of the gas flowing from the gas supply unit to the exhaust unit is a first flow rate,
In the step of raising the substrate, the gap between the substrates is calculated based on the detected empty state of the substrate, and when the gap between at least one set of the substrates is in a predetermined range, the gas supply unit The substrate processing method is characterized in that the flow rate of the gas flowing from the first to the exhaust portion is a second flow rate smaller than the first flow rate . In the second processing unit, a step of further processing the substrate that has been subjected to the chemical treatment by the processing unit;
A step of transporting the substrate raised by the substrate holding unit from the processing unit to the second processing unit,
In the step of raising the substrate, when the flow rate of the gas flowing from the gas supply unit to the exhaust unit is the second flow rate, in the step of transporting the substrate, the gas flowing from the gas supply unit to the exhaust unit The substrate processing method according to claim 6 , wherein the flow rate is the second flow rate. A step of lowering the substrate transported from the processing unit by the substrate holding unit of the second processing unit, the second processing liquid stored in the second processing tank of the second processing unit; Further comprising the step of immersing the substrate in
In the step of transporting the substrate, when the flow rate of the gas flowing from the gas supply unit to the exhaust unit is the second flow rate, in the step of lowering the substrate, the gas flowing from the gas supply unit to the exhaust unit The substrate processing method according to claim 7 , wherein the flow rate is the second flow rate. When the flowing gas at the second flow rate to the exhaust portion from the gas supply unit, the flow velocity of the gas flowing between the substrate, any of claims 6 to 8, characterized in that at 0.5 m / sec A substrate processing method according to claim 1. 10. The substrate according to claim 9 , wherein when a gas flows from the gas supply unit to the exhaust unit at the second flow rate, a flow rate of the gas flowing between the substrates is 0.3 m / second or less. Processing method. A recording medium on which a computer program for executing a substrate processing method is recorded,
This substrate processing method
A step of holding a plurality of substrates by a substrate holder of the processing unit;
Detecting an empty state of the substrate;
In the processing tank of the processor the drug liquid is stored, the substrate held by the substrate holding portion is immersed in chemical liquid, a step of chemical treatment,
A step of raising the substrate treated with a chemical by the substrate holding part,
In the step of raising the substrate, a housing case that houses the processing tank from a gas supply unit that is provided above the processing tank and supplies gas to the processing tank based on the detected empty state of the substrate The flow rate of the gas flowing through the exhaust part for exhausting the gas supplied from the gas supply part is adjusted ,
In the step of chemical treatment of the substrate, the flow rate of the gas flowing from the gas supply unit to the exhaust unit is a first flow rate,
In the step of raising the substrate, the gap between the substrates is calculated based on the detected empty state of the substrate, and when the gap between at least one set of the substrates is in a predetermined range, the gas supply unit The recording medium is characterized in that the flow rate of the gas flowing from the first to the exhaust portion is a second flow rate smaller than the first flow rate .

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