JP5394659B2 - Semiconductor wafer - Google Patents

Description

The present invention relates to a semiconductor upper teeth, and more particularly, the thickness of the outer edge, relates to a semiconductor upper blade which is relatively larger than the thickness of other regions.

  Recently, in semiconductor wafers (hereinafter simply referred to as “wafers”), ultra-thin grinding is required, but the wafer diameter tends to increase. For this reason, in transporting a wafer that has been ground to an extremely thin thickness, the wafer is transported in a state of being warped by its own weight, so that there is a disadvantage that the wafer is broken. Here, in order to avoid such an inconvenience, a wafer having a form disclosed in Patent Document 1 is used. In this document, by grinding so that the thickness of the outer edge side of the wafer is relatively larger than the thickness of the other regions, a recess is formed, and this outer edge is made the remaining circumferential portion, which serves as a reinforcing material. Thus, the wafer can be prevented from being damaged.

  As a wafer transfer device, a configuration is known in which a wafer is sucked and held over the entire surface in order to prevent the above-described warping (see Patent Document 2). As another transfer device, a configuration is also known in which a plurality of locations on the outer peripheral edge of the wafer are held and transferred (see Patent Document 3).

JP 2007-19379 A JP 2003-234392 A JP 2000-21951 A

However, when a wafer having a recess as in Patent Document 1 is transported by a transport apparatus such as Patent Document 2, the inside of the recess of the wafer is depressurized by the suction pad that sucks the entire surface of the wafer, thereby There is an inconvenience of sucking the bottom and damaging the wafer.
Further, when a wafer having concave portions formed thereon is transferred by a transfer apparatus such as that disclosed in Patent Document 3, there is a disadvantage that the wafer is broken if the force for holding the wafer is strong.
Thus, it is conceivable to hold and transport a plurality of chuck members by pressing them against the inner standing surface of the recess. However, in the wafer of Patent Document 1, the inner standing surface is in a direction perpendicular to the circuit surface of the wafer. Therefore, there is nothing that regulates the dropping of the wafer on the contact surface of the chuck member, and there is a disadvantage that the wafer is easily dropped during the transfer. In addition, if the pressing force of the chuck member is increased in order to restrict the dropping of the wafer, there is a conflicting problem that the remaining circumferential portion is damaged and cannot be transferred.

[Object of invention]
The present invention has been devised by paying attention to such inconveniences, and an object of the present invention is to prevent the chuck member from falling off when being held and transported by pressing the chuck member against the inner standing surface of the recess. to provide a semiconductor upper lobe possible.

In order to achieve the above object, the present invention provides a semiconductor wafer in which a recess is formed by making the thickness of the outer edge side larger than the thickness of the other region.
The concave portion includes a bottom surface and an inner standing surface extending from the bottom surface. The inner standing surface is located at least on the first diameter portion and on the opening surface side of the first diameter portion and from the first diameter portion. have a protrusion also comprising a second diameter which is reduced in diameter, the protrusion adopts a configuration in which, Ru is more formed by sloped surfaces like bellows.

Further, the present invention provides a semiconductor wafer in which a recess is formed by making the thickness of the outer edge side larger than the thickness of the other region,
The concave portion includes a bottom surface and an inner standing surface extending from the bottom surface. The inner standing surface is located at least on the first diameter portion and on the opening surface side of the first diameter portion and from the first diameter portion. The first diameter portion is formed by a valley portion having a circular arc shape in cross section, and the second diameter portion is defined by the first diameter portion. A configuration is adopted in which the arc-shaped surfaces that are continuous from each other are adjacent to each other and formed by a surface orthogonal to the bottom surface.

Furthermore, the present invention provides a semiconductor wafer in which a recess is formed by making the thickness of the outer edge side larger than the thickness of the other region.
The concave portion includes a bottom surface and an inner standing surface extending from the bottom surface. The inner standing surface is located at least on the first diameter portion and on the opening surface side of the first diameter portion and from the first diameter portion. The first diameter portion is formed by a surface orthogonal to the bottom surface, and the second diameter portion is connected to the first diameter portion. It is configured to be formed by a surface that is adjacent to a surface parallel to the bottom surface and orthogonal to the bottom surface.

Further, the present invention provides a semiconductor wafer in which a recess is formed by making the thickness of the outer edge side larger than the thickness of the other region,
The concave portion includes a bottom surface and an inner standing surface extending from the bottom surface. The inner standing surface is located at least on the first diameter portion and on the opening surface side of the first diameter portion and from the first diameter portion. The first diameter portion is formed by a trough portion of a surface parallel to the bottom surface and a surface forming an acute angle with respect to the bottom surface, The second diameter portion is adjacent to a surface forming an acute angle with respect to the bottom surface and is formed by a surface orthogonal to the bottom surface.

Further, the semiconductor wafer of the present invention is a semiconductor wafer in which a recess is formed by making the thickness of the outer edge side larger than the thickness of the other region,
The recess includes a bottom surface and an inner upright surface extending from said bottom surface, said inner standing surface is taken the entire surface is formed by a rough surface, called configuration.

Furthermore, the present invention provides a semiconductor wafer in which a recess is formed by making the thickness of the outer edge side larger than the thickness of the other region.
The concave portion includes a bottom surface and an inner standing surface extending from the bottom surface. The inner standing surface is located at least on the first diameter portion and on the opening surface side of the first diameter portion and from the first diameter portion. The first diameter portion is formed by a valley portion of a surface that forms an obtuse angle with respect to the bottom surface and a surface parallel to the bottom surface, The second diameter portion is adjacent to a surface parallel to the bottom surface and is formed by a surface orthogonal to the bottom surface .

  According to the present invention, since the protruding portion is formed on the inner standing surface, when the chuck member is pressed against the inner standing surface to be held and transported, the protruding portion functions as a member that regulates the dropping of the wafer, Inconveniences such as dropping of the wafer during transfer can be reliably solved. Further, by forming the protruding portion, it is possible to stably hold and transport the chuck member without falling off without increasing the pressing force of the chuck member.

  Furthermore, by forming a plurality of protrusions with a bellows-like inclined surface, the number of wafers that are prevented from dropping off increases, and the wafer can be held and transported more stably.

  In addition, when the inner standing surface is a rough surface, it is possible to increase the frictional resistance with the tip surface of the chuck member, and it is also possible to prevent the falling during conveyance using the chuck member.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[First Embodiment]
FIG. 1 is a schematic front sectional view of a wafer according to the first embodiment. In this figure, a wafer W has an opening surface F1 (upper surface in FIG. 1) in which a recess W1 is formed, a circuit surface F3 (lower surface in FIG. 1) in which a circuit is formed, an opening surface F1 and a circuit surface F3. It is comprised from the side surface F2 (surface on either side in FIG. 1) as an outer edge to connect. In addition, the outer peripheral side of the recessed part W1 becomes the remaining circumferential part W2, and the thickness of the outer edge side is relatively larger than the thickness of the other region. Further, a surface protection sheet (not shown) is affixed to the circuit surface F3. The wafer W and the recess W1 are provided in a substantially circular shape in plan view, and the remaining circumferential portion W2 is provided in a ring shape. The concave portion W1 includes a bottom surface W1a and an inner standing surface W1b extending from the outer edge of the bottom surface W1a, and an inclined surface P1 directed from the outer edge of the bottom surface W1a toward the opening surface F1 at an inclination angle α (angle α is an acute angle). Is formed. Thereby, the recessed part W1 is a protrusion which consists of the 1st diameter part D1 and the 2nd diameter part D2 which is located in the opening surface F1 side rather than the said 1st diameter part D1, and was diameter-reduced rather than the 1st diameter part D1. A portion C is formed.

  When manufacturing the wafer W, a grinder 20 as shown in FIG. 2 is used. The grinder 20 includes a motor 21, an output shaft 21A, and a grindstone 22 that is connected to the output shaft 21A and is rotatable. The grindstone 22 includes a conical surface 22A having the same axial center position as the output shaft 21A, and a bottom surface 22B connected to the lower end of the conical surface 22A. An angle α between W1b and the bottom surface W1a is formed. The grinder 20 revolves within a predetermined region while rotating the grindstone 22 from the upper surface (opening surface F1) of the wafer W, whereby the upper surface side of the wafer W is ground to form a recess W1 and the conical surface 22A. A protrusion C is formed. Further, a concave portion W1 (a concave portion having a conventional shape as described in the problem to be solved by the invention) is formed by the grindstone 22 and formed from the inner standing surface W1b oriented in a direction orthogonal to the circuit surface of the wafer W. Then, the protruding portion C may be formed by the conical surface 22A of the grindstone 22. Further, using another grindstone having a side surface oriented in a direction perpendicular to the bottom surface of the grindstone, a concave portion W1 formed of an inner standing surface W1b oriented in a direction orthogonal to the circuit surface of the wafer W is formed. In addition, after that, the protrusion C may be formed by the grindstone 22 having the conical surface 22A.

  Therefore, according to the first embodiment, as shown in FIG. 3, when the tip of the L-shaped chuck member 25 is held and transported in contact with the inner standing surface W <b> 1 b, the protrusion C The wafer W does not fall off. In particular, the chuck member 25 also has a tip shape formed at the angle α, so that the drop-off preventing effect can be improved. That is, the protruding portion C functions as a member that restricts the wafer W from falling off, and the wafer W can be reliably prevented from dropping without increasing the pressing force of the chuck member 25.

Next, other embodiments of the present invention will be described. In the following description, the same reference numerals are used for the same or equivalent components as in the first embodiment, and the description is omitted or simplified.

[Second Embodiment]
FIG. 4 shows a schematic front cross-sectional view of a wafer W according to the second embodiment. In this second embodiment, the inner rising surface W1b, the surface P2 facing the outer edge of the bottom surface W1a in a direction Cartesian to the bottom W1a, surface it unsuitable from the upper end toward the center of the wafer W in the plane P2 P2a A plane P3 parallel to the plane P2 is formed. Thereby, the recessed part W1 is a protrusion which consists of the 1st diameter part D1 and the 2nd diameter part D2 which is located in the opening surface F1 side rather than the said 1st diameter part D1, and was diameter-reduced rather than the 1st diameter part D1. A portion C is formed. In addition, when forming inner side standing surface W1b which has such a protrusion part C, the grindstone 22 which has the side surface shape provided with the circumferential surface 22C and protrusion part 22D which protrudes from this circumferential surface 22C is used. What is necessary is just to grind similarly to 1st Embodiment.
In such a second embodiment, as shown in FIG. 5, the tip of the L-shaped chuck member 25 is fitted into the first diameter portion D1, thereby preventing the wafer W from falling off and securely holding it. Can be transported.

[Third Embodiment]
FIG. 6 is a schematic front sectional view of a wafer W according to the third embodiment. In the third embodiment, the inner rising surface W1b is formed by a rough surface P4. Specifically, grinding is performed using a grindstone having irregularities that forms the rough surface P4.
According to the third embodiment, it is possible to increase the frictional resistance with the chuck member (not shown) that abuts on the inner standing surface W1b, and it is possible to increase the holding force by the chuck member.

As described above, the best configuration, method and the like for carrying out the present invention have been disclosed in the above description, but the present invention is not limited to this.
In other words, the present invention has been illustrated and described mainly with respect to specific embodiments, but without departing from the scope of the technical idea and object of the present invention, the shape, position, or With respect to the arrangement and the like, those skilled in the art can make various changes as necessary.
Therefore, the description limited to the shape disclosed above is an example for easy understanding of the present invention, and does not limit the present invention. The description by the name of the member which remove | excluded one part or all part is included in this invention.

For example, the protrusion C of the second embodiment can be variously modified. Specifically, the forms shown in FIGS. 7 to 10 can be exemplified. 7 and 8, the protrusion C is formed by an inclined surface P5 that is directed from the outer edge of the bottom surface W1a toward the opening F1 at an inclination angle α1 (the angle α1 is an acute angle). Moreover, in FIG.9 and FIG.10, the protrusion part C is formed in multiple numbers by the surface P6 which inclined in the shape of a bellows by sectional view. The bellows shape is line-symmetric with respect to an inclined surface P6a directed from the outer edge of the bottom surface W1a toward the opening surface F1 at an inclination angle α2 and an imaginary straight line L that is continuous with the upper end of the surface P6a and parallel to the bottom surface W1a. A continuum of two surfaces consisting of the surface P6b formed in the above.
Further, as shown in FIG. 10, the tip of the chuck member 25 may have a tip shape along a surface P6 inclined in a bellows shape, or may be formed of an elastic member.

  Furthermore, in the said embodiment, although linear surface P1-P6 was illustrated by sectional view, as shown to FIG. 11 (A), even if it forms the protrusion part C by the arc-shaped surface P7 by sectional view. Alternatively, as shown in FIGS. 11B and 12A, the protrusion C2 may be formed by a combination of a straight line and an arcuate surface P7 in a cross-sectional view.

  In the first embodiment, the protrusion C is formed with the angle α of the inclined surface P1 as an acute inclination. However, as shown in FIG. 12B, the protrusion C is formed with the angle α3 as an obtuse inclination. May be.

  Furthermore, in the grindstone 22 that forms the concave portion W1, in addition to a single grindstone having a side shape corresponding to the first and second diameter portions D1, D2, the first and second diameter portions D1, D2 may be formed. That is, in the step of grinding the wafer W in stages using a grinding stone for rough finishing or precision finishing, the protruding portion C may be formed using a grinding stone for grinding only the inner standing surface W1b.

  Moreover, even if it is a grindstone provided with the side surface shape which does not respond | correspond to 1st, 2nd diameter part D1, D2, 1st, 2nd diameter part D1, D2 is controlled by carrying out predetermined control of revolution operation and an up-down operation. May be formed.

1 is a schematic front sectional view of a wafer according to a first embodiment. FIG. 3 is a schematic front sectional view of the wafer according to the first embodiment during grinding. FIG. 3 is a schematic front cross-sectional view during transfer of a wafer according to the first embodiment. The schematic front sectional drawing in the middle of grinding of the wafer concerning a 2nd embodiment. FIG. 6 is a schematic front cross-sectional view during transfer of a wafer according to a second embodiment. The schematic front sectional drawing in the middle of grinding of the wafer concerning a 3rd embodiment. The schematic front sectional drawing in the middle of grinding of the wafer concerning the 1st modification. FIG. 6 is a schematic front cross-sectional view during transfer of a wafer according to a first modification. The schematic front sectional drawing in the middle of grinding of the wafer concerning the 2nd modification. FIG. 10 is a schematic front cross-sectional view during transfer of a wafer according to a second modification. (A) And (B) is a schematic front sectional drawing of the wafer which concerns on a 3rd modification. (A) And (B) is a schematic front sectional drawing of the wafer which concerns on a 3rd modification.

Explanation of symbols

C Projection D1 First Diameter D2 Second Diameter F1 Opening Surface F2 Side (Outer Edge)
P1 to P8 surface W semiconductor wafer W1 recess W1a bottom surface W1b inner upright surface 22 grindstone

Claims (6)

In the semiconductor wafer in which the concave portion is formed by making the thickness of the outer edge side larger than the thickness of the other region,
The concave portion includes a bottom surface and an inner standing surface extending from the bottom surface. The inner standing surface is located at least on the first diameter portion and on the opening surface side of the first diameter portion and from the first diameter portion. semiconductor wafers also have a protrusion and a second diameter portion having a reduced diameter, the protrusions, characterized in Rukoto formed in plural by sloped surfaces like bellows. In the semiconductor wafer in which the concave portion is formed by making the thickness of the outer edge side larger than the thickness of the other region,
The concave portion includes a bottom surface and an inner standing surface extending from the bottom surface. The inner standing surface is located at least on the first diameter portion and on the opening surface side of the first diameter portion and from the first diameter portion. The first diameter portion is formed by a valley portion having a circular arc shape in cross section, and the second diameter portion is defined by the first diameter portion. with adjacent cross section arcuate surface continuous from, it characterized by being formed by a plane perpendicular to the bottom surface semi conductor wafer. In the semiconductor wafer in which the concave portion is formed by making the thickness of the outer edge side larger than the thickness of the other region,
The concave portion includes a bottom surface and an inner standing surface extending from the bottom surface. The inner standing surface is located at least on the first diameter portion and on the opening surface side of the first diameter portion and from the first diameter portion. The first diameter portion is formed by a surface orthogonal to the bottom surface, and the second diameter portion is connected to the first diameter portion. with adjacent bottom surface parallel, semi-conductor wafer characterized by being formed by a plane perpendicular to the bottom surface. In the semiconductor wafer in which the concave portion is formed by making the thickness of the outer edge side larger than the thickness of the other region,
The concave portion includes a bottom surface and an inner standing surface extending from the bottom surface. The inner standing surface is located at least on the first diameter portion and on the opening surface side of the first diameter portion and from the first diameter portion. The first diameter portion is formed by a trough portion of a surface parallel to the bottom surface and a surface forming an acute angle with respect to the bottom surface, the second diameter portion, together with adjacent surfaces forming an acute angle with said bottom surface, semi-conductor wafer you characterized by being formed by a plane perpendicular to the bottom surface. In the semiconductor wafer in which the concave portion is formed by making the thickness of the outer edge side larger than the thickness of the other region,
The recess includes a bottom surface and an inner upright surface extending from said bottom surface, said inner standing surface is a semiconductor wafer, characterized in that its entire surface is formed by a rough surface. In the semiconductor wafer in which the concave portion is formed by making the thickness of the outer edge side larger than the thickness of the other region,
The concave portion includes a bottom surface and an inner standing surface extending from the bottom surface. The inner standing surface is located at least on the first diameter portion and on the opening surface side of the first diameter portion and from the first diameter portion. The first diameter portion is formed by a valley portion of a surface that forms an obtuse angle with respect to the bottom surface and a surface parallel to the bottom surface, the second diameter portion, the semi-conductor wafer with adjacent plane parallel to the bottom surface, characterized by being formed by a plane perpendicular to the bottom surface.

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