JP5342862B2 - Manufacturing method of optical matrix device - Google Patents

Description

  The present invention arranges light receiving elements or display elements in a two-dimensional matrix, such as a radiation detector provided in a thin image display apparatus used as a monitor of a television or a personal computer, or a radiation imaging apparatus used in the medical field or industrial field. The present invention relates to a method for manufacturing an optical matrix device having the above structure.

  2. Description of the Related Art In recent years, an optical matrix device in which light receiving elements or display elements each including an active element formed of a thin film transistor (TFT) or the like and a capacitor are arranged in a two-dimensional matrix has been widely used. These are broadly classified into devices composed of light receiving elements and devices composed of display elements. Examples of the light receiving element include an optical imaging sensor and a radiation imaging sensor used in the medical field or the industrial field. As the display element, there is an image display such as a liquid crystal type provided with an element for adjusting intensity of transmitted light used as a monitor of a television or a personal computer, and an EL type provided with a light emitting element. Both devices are optical matrix devices with light-related elements. Here, light refers to infrared rays, visible rays, ultraviolet rays, radiation (X-rays), γ rays, and the like.

  Among the optical matrix devices described above, an X-ray flat panel detector (FPD) as an optical matrix device having a light receiving element will be described as an example. In the X-ray flat panel detector, X-ray detection elements for detecting X-rays are arranged in a two-dimensional matrix. The X-ray detection element includes an X-ray conversion layer such as a semiconductor layer sensitive to X-rays. The X-rays are converted into carriers (charge signals) by the X-ray conversion layer, and the converted carriers are read out. Thus, X-rays are detected. As the semiconductor layer sensitive to X-rays, an amorphous a-Se (amorphous selenium) film or the like is used.

  Due to the carriers generated in the X-ray conversion layer, a charge signal is accumulated for a predetermined time in capacitors arranged in a two-dimensional matrix. Thereafter, the thin film transistor performs a switching action by the gate voltage sent from the gate drive circuit via the gate line, and the charge accumulated in the capacitor is converted into a voltage signal by the charge voltage conversion unit via the data wiring, and X It is read out as a line detection signal.

  As described above, the optical matrix device provided in the X-ray flat panel detector or the thin image display performs writing or reading of data through the data line, and applying the gate voltage to the gate electrode of the thin film transistor through the gate line. The switching action is performed by sending.

  If a pinhole is generated in the interlayer insulating film at the intersection of the data line and the gate line, the data line and the gate line may be short-circuited, and the switching function of the thin film transistor may not function or the data may be written. Or there was a problem of noise in reading.

In order to solve this problem, Patent Document 1 discloses a method for forming data lines (source lines) and gate lines in a liquid crystal display device, in which a multilayer between data lines and gate lines is formed by a photoresist method, a sputtering method, or a CVD method. A structure is disclosed. Patent Document 2 discloses that the interlayer insulating film between the data line and the gate line has a two-layer structure using a photoresist method and a CVD method, thereby increasing the thickness of the interlayer insulating film. Yes.
Japanese Patent Laid-Open No. 05-027266 JP 2002-094071 A

  However, in order to form an interlayer insulating film between the gate line and the data line using the photolithography method and the sputtering method or the CVD method, a mask for forming the interlayer insulating film has to be prepared, which is complicated. . Furthermore, since the insulating films have to be formed one by one, the efficiency is low and the manufacturing cost is high. In addition, when an insulator is formed on a gate line by anodizing as in Patent Document 1, Ta (tantalum) must be used as a wiring material, but Ta is a rare metal (rare metal), and its price is It is very expensive.

  The present invention has been made in view of such circumstances, and an object of the present invention is to provide a method of manufacturing an optical matrix device that forms an insulating film free from short-circuit defects by a printing method.

In order to achieve such an object, the present invention has the following configuration.
That is, the invention described in claim 1 is a method of manufacturing an optical matrix device configured by arranging light-related elements in a two-dimensional matrix, and the first insulating film is formed by applying a fluid insulator. A first insulating film coating step to be formed; a pre-curing step for pre-curing the first insulating film by applying energy lower than a standard curing energy of the first insulating film; and on the pre-cured first insulating film A second insulating film coating step for forming a second insulating film by applying a fluid insulating material to the substrate by a printing method; and curing the first insulating film and the second insulating film to form an interlayer insulating film or a passivation film. characterized by comprising a main curing step you formed.

According to the above configuration, the first insulating film formed by applying the fluid insulating material to the first insulating film is pre-cured by applying energy lower than the standard curing energy necessary for the original curing formation. Inevitable pinholes are formed on the top and temporarily fixed by eliminating the fluidity of the insulator. Next, a fluid insulating material is applied on the first insulating film by a printing method on the pre-cured first insulating film to form a second insulating film, so that pinholes generated in the first insulating film are formed. The fluid insulator fills the hole. Then, by subjecting the first insulating film and the second insulating film to main curing by applying the original standard curing energy, an insulating film having a two-layer structure can be obtained. Even if a pinhole is generated in the second insulating film, the pinhole is interrupted in the first insulating film, so that a pinhole penetrating the first insulating film and the second insulating film cannot be generated. As a result, it is possible to suppress the leakage current value flowing through the insulating film composed of the first insulating film and the second insulating film, to prevent a decrease in withstand voltage due to the dielectric breakdown caused by the leakage current, and to short circuit. (Short circuit) defects can be reduced. Further, by forming the first insulating film and the second insulating film as the passivation film of the active matrix substrate, a passivation film without a pinhole can be formed. Thereby, the environmental resistance of the semiconductor film of the active matrix substrate can be improved.

  The invention described in claim 2 is the method for manufacturing the optical matrix device according to claim 1, wherein the printing method is an ink jet method.

  According to the above configuration, since the printing method for forming the second insulating film is an inkjet method, the second insulating film can be locally formed. Unlike a sputtering method or a CVD method, a mask is not required, so that throughput can be improved.

  According to a third aspect of the present invention, in the method for manufacturing an optical matrix device according to the first or second aspect, the first insulating film and the second insulating film are the same type of insulating film. .

  According to the said structure, the conditions which carry out this hardening can be made into the same conditions by making the fluid insulating body of a 1st insulating film and a 2nd insulating film into the same kind. In addition, the properties of the insulating film formed by the two-layer structure of the first insulating film and the second insulating film can be made uniform. Thus, a stable optical matrix device can be manufactured.

  According to a fourth aspect of the present invention, in the method of manufacturing an optical matrix device according to any one of the first to third aspects, the fluid insulator forming the first insulating film and the second insulating film is: It is an organic compound that is cured by heating or light irradiation.

  According to the above configuration, since the fluid insulator forming the first insulating film and the second insulating film is an organic compound that is cured by heating or light irradiation, the flexible first insulating film and A second insulating film can be formed.

  According to a fifth aspect of the present invention, in the method for manufacturing an optical matrix device according to the fourth aspect of the present invention, an energy supply means for pre-curing the first insulating film is provided in a printer that performs the second insulating film application step. Is provided.

  According to the above configuration, since the first insulating film can be pre-cured on the printing stand of the printer, the second insulating film can be printed while the first insulating film is pre-cured. Thereby, the throughput can be improved.

  According to a sixth aspect of the present invention, in the method for manufacturing an optical matrix device according to the fifth aspect, the fluid insulator forming the first insulating film and the second insulating film is an organic compound that is cured by heating. And the preliminary curing step is performed by raising the temperature of the printing stand of the printer.

  According to the above configuration, since the fluid insulator forming the first insulating film and the second insulating film is an organic compound that is cured by heating, the first insulating film is precured by raising the temperature of the printing stand of the printer. Can be implemented. As a result, the second insulating film can be printed and formed while the first insulating film is pre-cured on the heated printing stand, so that the throughput can be improved.

  According to a seventh aspect of the present invention, in the method of manufacturing an optical matrix device according to any one of the first to sixth aspects, the first insulating film and the second insulating film are formed of a gate line and data of an active matrix substrate. It is an interlayer insulating film between the lines.

  According to the above configuration, by forming the first insulating film and the second insulating film as an interlayer insulating film between the gate line and the data line of the active matrix substrate, it is possible to reduce a short circuit failure between the gate line and the data line. it can. Thus, an active matrix substrate that operates stably can be manufactured.

According to an eighth aspect of the present invention, in the method for manufacturing an optical matrix device according to any one of the first to seventh aspects, the optical matrix device is a photodetector.

  According to the above configuration, it is possible to manufacture a photodetector having no short circuit between wirings and reduced noise.

The invention described in claim 9 is the method for manufacturing an optical matrix device according to any one of claims 1 to 7 , wherein the optical matrix device is an image display device. .

  According to the above configuration, it is possible to manufacture an image display device in which there is no short circuit failure between wirings and noise is reduced.

  According to the method for manufacturing an optical matrix device according to the present invention, it is possible to provide a method for manufacturing an optical matrix device that forms an insulating film free from short-circuit defects by a printing method.

Embodiment 1 of the present invention will be described below with reference to the drawings.
FIG. 1 is a plan view of an X-ray flat panel detector according to an embodiment, FIG. 2 is a longitudinal sectional view of one pixel of the X-ray flat panel detector, and FIG. 3 is an X-ray flat panel detector. It is a circuit diagram which shows the equivalent circuit per pixel. In this embodiment, an X-ray flat panel detector (hereinafter referred to as FPD) will be described as an example of the optical matrix device.

<X-ray flat panel detector>
As shown in FIG. 1, the circuit configuration of the FPD 1 is induced from a semiconductor layer 2 as an X-ray conversion layer that converts X-rays into carriers (electron-hole pairs) and carriers generated in the semiconductor layer 2. A capacitor 3 for accumulating charges, a thin film transistor 5 that performs a switching action by a gate voltage signal between the capacitor 3 and the data line 4, and a gate drive circuit 7 that sends a gate voltage signal to the thin film transistor 5 through the gate line 6; A charge-voltage converter 8 that converts the charge signal read from the capacitor 3 into the data line 4 into a voltage signal, and a multiplexer 9 that collects the voltage signals output from the charge-voltage converter 8 and outputs them to one. Prepare. The FPD 1 corresponds to the optical matrix device in the present invention.

  Further, as shown in FIG. 2, the X-ray detection element DU includes a TFT 5, a capacitor 3, and a semiconductor layer 2 formed on the insulating substrate 10. The TFT 5 includes a data line 4, a gate line 6, an insulating film 11, a gate channel 12, and a capacitor electrode 13. The data line 4 is also a drain electrode of the thin film transistor 5, and the capacitor electrode 13 is also a source electrode of the thin film transistor 5. A gate line 6 and a ground line (GND line) 14 are stacked on the X-ray incident side of the insulating substrate 10, and a gate channel 12 is stacked opposite the gate line 6 with the insulating film 11 interposed therebetween. At both ends of the gate channel 12, the data line 4 and the capacitor electrode 13 are partially overlapped and stacked. The capacitor 3 includes a ground line 14, an insulating film 11, and a capacitor electrode 13. An insulating film 15 is stacked on the insulating film 11, the gate channel 12, the data line 4, and the capacitor electrode 13. In this way, one pixel of the FPD is composed of one X-ray detection element DU. The X-ray detection element DU corresponds to an element related to light in the present invention.

  A pixel electrode 16 is stacked on the capacitor electrode 13, and a semiconductor layer 2 is further stacked on the pixel electrode 16. An insulating film 15 is stacked on the insulating film 11, the gate channel 12, the data line 4, and the capacitor electrode 13, and an insulating film 17 is stacked around the pixel electrode 16. A common electrode 18 is stacked on the semiconductor layer 2. The capacitor 3, the data line 4, the TFT 5, the gate line 6, the insulating substrate 10, the insulating film 11, the gate channel 12, the capacitor electrode 13, and the ground line 14 constitute an active matrix substrate 20.

  As described above, the FPD 1 includes the X-ray detection unit DX formed by arranging a large number of X-ray detection elements DU each including the TFT 5 in a vertical and horizontal two-dimensional matrix. In FIG. 1, for simplification of explanation, 3 × 3 X-ray detection elements DU are arranged vertically and horizontally, but actually, for example, 1024 × 1024 are arranged.

As shown in FIG. 3, when radiation imaging is performed by irradiating a subject with X-rays while a bias voltage is applied to the common electrode 18 from a bias power source 21, a radiation image transmitted through the subject is formed on the semiconductor layer 2. The projected carrier is generated in the semiconductor layer 2 in proportion to the density of the image. The carriers converted by the semiconductor layer 2 induce a charge in the capacitor 3 and the charge is accumulated in the capacitor 3.
Next, by applying the voltage of the gate line 6 to a positive voltage, each X-ray detection element DU is selected in units of rows, and the gates of the TFTs 5 in the selected row are turned on. Then, the charges temporarily stored in the capacitor 3 and stored until the thin film transistor 5 is turned on are read out to the data line 4 through the thin film transistor 5 as a charge signal. The charge signal read out to each data line 4 is converted into a voltage signal by the charge-voltage converter 8, and is output as a single voltage signal by the multiplexer 9. The output voltage signal is digitized by an A / D converter (not shown) and output as an X-ray detection signal. As described above, the electric signal converted from the X-ray in the semiconductor layer 2 can be extracted as the X-ray detection signal.

  Next, the manufacturing method of FPD in Example 1 is demonstrated with reference to FIGS. 4 is a schematic perspective view of a substrate printer for forming FPD wiring, insulating film, and the like, FIG. 5 is a longitudinal sectional view showing a head of the substrate printer, and FIG. 6 shows a flow of manufacturing steps of the FPD. 7 (a) to 12 (a) are schematic plan views showing the manufacturing process of the FPD, and FIGS. 7 (b) to 12 (b) are FIGS. 7 (a) to 12 (b). It is AA arrow sectional drawing of (a), FIG.7 (c)-FIG.12 (c) are BB arrow sectional drawing of FIG.7 (a)-FIG.12 (a), FIG. 13 is a longitudinal sectional view showing the manufacturing process of the FPD 1.

<Board printer>
As shown in FIG. 4, the substrate printer 22 includes a support arm 24 including the inkjet nozzles 23, a substrate support table 25 that supports the insulating substrate 10 disposed to face the inkjet nozzles 23, and a substrate support table 25. The X direction table drive mechanism 26 moves the X direction and the Y direction table drive mechanism 27 moves the substrate support table 25 in the Y direction. A heater 19 for heating the substrate support table 25 is provided inside the substrate support table 25. Examples of the heater include an electric heater and a hot plate, and the output of the heater 19 can be adjusted by the surface temperature of the substrate support table 25. The substrate printer 22 corresponds to the printer in the present invention, the substrate support table 25 corresponds to the printing stand in the present invention, and the heater provided in the substrate support table 25 corresponds to the energy supply means in the present invention.

  The ink stored in the inkjet nozzle 23 in Example 1 and the droplets 28 (ink) ejected from the inkjet nozzle 23 are a semiconductor, an insulator, or conductive fine particles dissolved or dispersed in an organic solvent, A solution or colloidal state. The droplet 28 composed of an insulator and an organic solvent corresponds to the fluid insulator in the present invention.

  As shown in FIG. 5, the inkjet nozzle 23 of Example 1 employs a piezo type. A piezoelectric element (piezo element) 30 sandwiched between a pair of electrodes 29 is provided above the inkjet nozzle 23. When the electrode 29 is energized by applying a piezoelectric pulse, the piezoelectric element 30 warps downward and the upper portion of the ink tank 31 also warps downward, the volume of the ink tank 31 decreases, and the pressure of the ink in the ink tank 31 decreases. To rise. As a result, a drop of ink corresponding to the reduced volume in the ink tank 31 is ejected as a droplet 28 from the tip of the inkjet nozzle 23. The size of the droplet 28 is determined by the shape of the tip of the inkjet nozzle 23, but in this embodiment, the diameter is set to 1 μm or more and 100 μm or less. When the piezoelectric pulse becomes zero, the upper portion of the piezoelectric element 30 and the ink tank 31 returns to the original state, so that ink is replenished in the ink tank 31.

  In this embodiment, the piezo type is adopted as the ink jet nozzle, but another type of piezo type or a thermal type may be adopted. In the case of the thermal type, it is necessary to adjust the application time so that the ink is not cured by heat.

  Next, the manufacturing process of the FPD 1 will be described in order with reference to the flowchart of FIG.

(Step S1) Formation of Gate Line / Ground Line First, as shown in FIGS. 7A to 7C, the gate line 4 and the ground line (by the inkjet method using the substrate printer 22 on the surface of the insulating substrate 10). (GND line) 14 is laminated. The insulating substrate 10 is preferably a glass substrate or polyimide.

(Step S2) First Insulating Film Formation Next, as shown in FIGS. 8A to 8C, an insulating film 11 is applied on the insulating substrate 10 by an inkjet method so as to cover the gate line 6 and the ground line 14. And laminated. The insulating film 11 corresponds to the first insulating film in the present invention, and step S2 corresponds to the first insulating film application step in the present invention.

(Step S <b> 3) First Insulating Film Precuring Next, the insulating film 11 is heated via the insulating substrate 10 from a heater provided inside the substrate support table 25. As an example, heating is performed at 40 ° C. for 1 minute. As a result, since the insulating film 11 is pre-cured, no lateral flow or the like occurs. Moreover, a pinhole arises in the location which can produce a pinhole by precuring. Since the preliminary curing time may be such that the solvent of the droplets 28 is volatilized, it is desirable that the preliminary curing time be 1/30 or more of the curing time when the main curing is performed in a later step. Further, it is not necessary to wait for the printing application during the preliminary curing. That is, since the adjacent insulating film 11 can be printed and applied while pre-curing, the insulating film 11 can be formed efficiently. When the heater heats the entire substrate support table, if printing application is performed while pre-curing, it may heat longer than the heat-curing time of the insulating film 11 that has been previously printed, which is particularly troublesome. There is no. Step S3 corresponds to a preliminary curing step in the present invention.

(Step S4) Formation of Second Insulating Film Next, as shown in FIGS. 9A to 9C, an insulating film 32 is applied to a predetermined region on the gate line 6 through the insulating film 11 by an inkjet method. Layered. Here, the predetermined region where the insulating film 32 is formed refers to a region where the gate line 6 and the data line 4 intersect. The insulating film 32 corresponds to the second insulating film in the present invention, and step S4 corresponds to the second insulating film coating step in the present invention.

(Step S <b> 5) Second Insulating Film Precuring Next, the insulating film 32 is heated via the insulating substrate 10 from a heater provided inside the substrate support table 25. As an example, heating is performed at 40 ° C. for 1 minute. Thus, since the insulating film 32 is pre-cured, no lateral flow or the like occurs. The pre-curing time is desirably 1/30 or more of the curing time when the main curing is performed in a later step.

(Step S6) Insulating Film Main Curing Next, in order to fully cure the insulating film 11 and the insulating film 32, heating is performed at 230 ° C. for 30 minutes in a drying furnace. Thereby, since the molecules constituting the insulating film are bonded to each other, the insulating film 11 and the insulating film 32 are securely fixed. The heat curing conditions depend on the curing conditions of the insulating film 11 and the insulating film 32, but when each insulating film is an organic insulating film, the curing temperature is about 150 ° C. to 250 ° C., and the curing time is 10 minutes to About 60 minutes is standard. Step S6 corresponds to the main curing step in the present invention.

(Step S7) Gate Channel Formation Then, as shown in FIGS. 9A to 9C, a gate channel 12 is formed by laminating a semiconductor film at a predetermined position facing the gate line 6 with the insulating film 11 interposed therebetween. To do.

(Step S8) Formation of Data Line / Capacitance Electrode As shown in FIGS. 10A to 10C, the data line 4 and the capacitance electrode 13 are stacked on the insulating film 11 with the gate channel 12 interposed therebetween. The data line 4 is stacked so as to overlap a part of one end of the gate channel 12. The capacitor electrode 13 is stacked so as to overlap a part of one end of the gate channel 12 so as to face the ground line 14 with the insulating film 11 interposed therebetween. A portion of the gate line 6 facing the gate channel 12, a portion of the data line 4 on the gate channel 12 side, a gate channel 12, a portion of the capacitor electrode 13 on the gate channel 12 side, and the gate line 6 / data line. 4, the gate channel 12, and the insulating film 11 interposed between the capacitor electrodes 13 constitute the thin film transistor 5. The capacitor 3 is composed of the insulating film 11 interposed between the capacitor electrode 13 and the ground line 14. Thus, the active matrix substrate 20 is formed.

(Step S9) Formation of Insulating Film As shown in FIGS. 11A to 11C, the insulating film 15 is laminated on the insulating film 11 together with the capacitor electrode 13, the data line 4, and the gate channel 12. Thereafter, in order to connect to the pixel electrode 16 to be laminated, there is a portion where the insulating film 15 is not formed on the capacitor electrode 13, and the insulating film 15 is formed around the capacitor electrode 13. That is, the insulating film 15 is laminated so as to open a part of the capacitor electrode 13. The insulating film 15 also functions as a passivation film for the active matrix substrate 20.

(Step S10) Formation of Pixel Electrode As shown in FIGS. 11A to 11C, the pixel electrode 16 is formed on the capacitor electrode 13 and the insulating film 15 in a stacked manner.

(Step S <b> 9) Insulating Film Formation As shown in FIGS. 12A to 12C, an insulating film 17 is laminated on the pixel electrode 16 and the insulating film 15. Thereafter, in order to collect the carriers generated by the semiconductor layer 2 to be stacked on the pixel electrode 16, the insulating film 17 is not stacked on the most part of the pixel electrode 16 so as to directly contact the semiconductor layer 2. Only the periphery of the pixel electrode 16 is laminated with the insulating film 17. That is, the insulating film 17 is laminated so as to open most of the pixel electrode 16.

(Step S <b> 10) Formation of Semiconductor Layer As shown in FIG. 13, the semiconductor layer 2 is stacked on the pixel electrode 16 and the insulating film 17. In the case of the present embodiment, a-Se is laminated as the semiconductor layer 2, and hence vapor deposition is used. The stacking method may be changed depending on what type of semiconductor is used for the semiconductor layer 2.

(Step S11) Formation of Common Electrode As shown in FIGS. 13A and 13B, the common electrode 18 is formed on the semiconductor layer 2 by lamination. As described above, the X-ray detector DX is manufactured, and a series of manufacturing of the X-ray flat panel detector 1 is completed by connecting peripheral circuits such as the gate drive circuit 7, the charge voltage converter 8 and the multiplexer 9 to this. .

  Regarding the formation of the laminated pattern of these optical matrix devices, it is preferable to form the laminated pattern using a print coating film formation. If it is a printing method, it can be easily and thinly laminated in the atmosphere. The printing method may be a transfer method such as letterpress printing, gravure printing, flexographic printing or nanoimprinting, but the inkjet method is most preferred.

  In addition to the printing method, a lamination method may be formed by using a combination of patterning techniques such as vapor deposition, spin coating, dip coating, electroplating, sputtering, and photolithography. This is effective when the insulating film and the semiconductor layer 2 are uniformly laminated over the entire substrate. Further, these pattern technologies and the ink jet method may be combined to form a laminate.

The conductor forming the data line 4, the gate line 6, the ground line 14, the capacitor electrode 13, and the common electrode 18 is made of a metal such as Ag (silver), Au (gold), and Cu (copper) in nanosize (10 ^{− It} may be formed by printing a paste-like metal ink containing particles of about ⁹ m), representative of ITO ink or polyethylenedioxythiophene doped with polystyrene sulfonic acid (PEDOT / PSS) It may be formed by printing a highly conductive organic ink. The metal ink can be cured not only by a heater provided in the substrate support table 25 but also by laser or infrared rays. If a metal ink that is photocured in addition to heat curing is employed, each wiring and each electrode can be formed by photocuring the metal ink.

  As described above, regarding the laminated pattern composed of the capacitor electrode 13, the capacitor 3, the thin film transistor 5, the data line 4, and the gate line 6, all of the laminated pattern may be formed of an organic material or an inorganic material. A part of them may be laminated with an organic material.

  The semiconductor forming the gate channel 12 may be an organic semiconductor made of an organic substance such as pentacene, an oxide semiconductor typified by low-temperature polysilicon or ZnO (zinc oxide), or an inorganic semiconductor such as a carbon nanotube. May be.

  About the insulator which forms the insulating films 11, 15, 17, and 32, what hardens | cures with a heat | fever or light is preferable. For example, there is an organic insulator such as polyimide or acrylic. By diluting these organic insulators in an organic solvent, a laminate can be formed by a printing method. Moreover, as long as it can be formed by printing, it is not limited to an organic insulator, and may be an inorganic insulator. Furthermore, a mixture of an organic insulator and an inorganic insulator may be used. The difference between the standard curing conditions for main curing and the pre-curing conditions for pre-curing is the difference between temperature and time if the insulator is thermosetting, and the time for irradiation if the insulator is photo-curable. It makes a difference.

  The semiconductor forming the semiconductor layer 2 may be a radiation-sensitive material in which carriers are generated by the incidence of radiation, or a light-sensitive material in which carriers are generated by the incidence of light, in addition to the above-described a-Se. For example, an organic semiconductor may be used.

  The interlayer insulating film of the gate line 6 and the data line 4 formed of the insulating film 11 and the insulating film 32 formed as described above has a higher breakdown voltage than the interlayer insulating film formed by the conventional manufacturing method, and has a leakage current value. Has been reduced. A confirmation experiment was conducted to confirm this effect. Table 1 shows leaks under the condition A in which the insulating film between the electrodes is formed of one insulating film, the condition B that is formed of two insulating films, and the condition C that is formed of three insulating films. The current value is shown. FIG. 14 is a diagram showing the voltage resistance and leakage current value of one layer of the insulating film between the electrodes, and FIG. 15 is a diagram showing the voltage resistance and leakage current value of the two layers of the insulating film between the electrodes. Yes, FIG. 16 shows a schematic diagram of this confirmation experiment.

  As shown in FIG. 16, an insulating film 35 is formed between two electrodes 34 on a glass substrate 33. Ag is used for the electrode 34 and polyimide is used for the insulating film 35. The insulating film 35 in the condition A is formed by applying one layer of polyimide by an ink jet method, and the film thickness is about 1 μm. The insulating film 35 in the condition B is formed by applying two layers of polyimide by the ink jet method, and the film thickness is about 2 μm in total because the thickness of one layer is about 1 μm. In condition B, the first layer of polyimide was applied by the ink jet method, and then the glass substrate 33 was heated to 60 ° C. to pre-cured the polyimide for 5 minutes, and the second layer of polyimide was applied by the ink jet method. The insulating film 35 in the condition C was formed by pre-curing the first and second polyimide layers as in the condition B, and then applying the third polyimide layer by the ink jet method. The number of samples in each condition was 16, but in condition A, since one sample caused dielectric breakdown, the number of samples was reduced.

FIG. 14 shows the relationship between the voltage and the leakage current value when the voltage is increased by 2 V from the power supply unit 36 to the insulating film 35 under the condition A formed as described above. According to condition A in FIG. 1 and FIG. 14, the leakage current value exceeds 10 ⁻¹¹ A after the applied voltage exceeds 60 V, and the leakage current value increases as the applied voltage increases. In addition, there is a sample in which the withstand voltage of the insulating film 35 is broken and a short circuit failure occurs when the applied voltage exceeds 80V. It can be seen that when a short circuit failure occurs, the periphery of the pinhole is burned and the insulation is restored, but a short circuit failure occurs again.

FIG. 15 shows the relationship between the voltage and the leakage current when the voltage is increased by 2 V from the power supply unit 36 to the insulating film 35 under the condition B. According to Condition B in Table 1 and FIG. 15, even when the applied voltage is 100 V, the leakage current value does not exceed 10 ⁻¹¹ A, converges to a substantially constant value, and causes dielectric breakdown. There is no.

  Comparing Condition A and Condition B in Table 1 and FIGS. 14 and 15, the two-layered insulating film formed in this example has a higher withstand voltage and a leakage current value than the single-layered insulating film. Is also low. Moreover, since the value of the standard deviation is also low, the variation in the leakage current value is reduced. Further, referring to the condition C in Table 1, the leakage current value of the insulating film and its variation are slightly reduced in the three-layer structure than in the two-layer structure.

  In addition, when the interlayer insulating film of the gate line and the data line is formed with a two-layer structure by the ink jet method, the shape of the interlayer insulating film is also improved. FIG. 17 is an explanatory view when a pinhole is generated in the interlayer insulating film between the gate line 6 and the data line 39 manufactured by a conventional manufacturing method such as sputtering, and FIG. 18 is a gate line manufactured by the manufacturing method of the present invention. 6 is an explanatory diagram when a pinhole occurs in an interlayer insulating film between 6 and a data line 4. FIG.

  Referring to FIG. 17, in the conventional manufacturing method, when a pinhole is generated in the insulating film 37 formed on the gate line 6, the insulating film 38 stacked on the insulating film 37 is also shaped into the pinhole of the insulating film 37. The shape is affected. As a result, the data line 39 formed on the surface of the insulating film 38 also has a shape influenced by the shape of the pinhole. As a result, noise is generated in the data line 39.

  On the other hand, the interlayer insulating film between the gate line 6 and the data line 4 formed by the manufacturing method of the present application is as shown in FIG. Even if a pinhole is generated in the insulating film 37 formed on the gate line 6, when the insulating film 40 formed on the insulating film 37 is formed by a printing method, the insulating film 40 is formed by the liquid droplets 28 that are fluids. Since it is formed, the surface of the insulating film 40 is self-flattened by the surface tension. Accordingly, the data line 4 formed on the surface of the insulating film 40 can be formed without being affected by the shape of the pinhole. Thus, noise can be reduced in the data line 4 as compared with the conventional case.

  Further, the formation failure of the interlayer insulating film between the gate line 6 and the data line 4 includes foreign matter mixing and generation of bubbles in addition to the pinholes. Can raise the sex. In addition, although the two-layer structure is used, the main curing of each insulating film is performed in a lump, so that the main curing may be performed once and the throughput can be improved.

  Next, Embodiment 2 of the present invention will be described with reference to FIG. FIG. 19 is a partially broken perspective view of a display (organic EL display) including an active matrix substrate as an example of an image display device.

  The method of the present invention is also preferably applied to the manufacture of an image display device. Examples of the image display device include a thin electroluminescent display and a liquid crystal display. The image display apparatus also includes a pixel circuit formed on an active matrix substrate, and is preferably applied to such a device.

  As shown in FIG. 19, an organic EL display 41 including an active matrix substrate is connected to a substrate 42, a plurality of TFT circuits 43 arranged in a matrix on the substrate 42, and pixel electrodes 44, and sequentially stacked on the substrate 42. The organic EL layer 45, the transparent electrode 46 and the protective film 47, and a plurality of source electrode lines 50 and gate electrode lines 51 for connecting the TFT circuits 43, the source driving circuit 48 and the gate driving circuit 49, respectively. ing. Here, the organic EL layer 45 is configured by laminating layers such as an electron transport layer, a light emitting layer, and a hole transport layer. In the organic EL display 41, the interlayer insulating film intersecting the source electrode line 50 and the gate electrode line 51 on the active matrix substrate is formed by the optical matrix device manufacturing method according to the first embodiment. There is no short circuit due to holes. As a result, an image display device that can suppress a short circuit failure (short circuit) between wirings can be manufactured.

  Moreover, although the image display apparatus mentioned above was a display using display elements, such as organic EL, it is not restricted to this, The liquid crystal display provided with the liquid crystal display element may be sufficient. In the case of a liquid crystal display, pixels are colored RGB by a color filter. Moreover, the display provided with the other display element may be sufficient.

  The present invention is not limited to the above-described embodiment, and can be modified as follows.

  (1) In the embodiment described above, the interlayer insulating film between the gate line and the data line has a two-layer structure of the insulating film 11 and the insulating film 32. However, another insulating film is formed on the insulating film 32. Thus, the interlayer insulating film between the gate line and the data line may be an insulating film having a three-layer or four-layer structure. As a result, the voltage resistance of the interlayer insulating film between the gate line and the data line is further improved, and the leakage current value is further reduced.

  (2) In the above-described embodiment, the pre-curing is uniformly heated by the heater provided in the substrate support table 25. However, the heating portion is divided and heated step by step for each region where printing is applied. It may be a thing.

  (3) In the above-described embodiments, the pre-curing is performed on the surface of the substrate support table 25 by the heater provided in the substrate support table 25. However, the present invention is not limited to this. A heater such as a furnace or a halogen heater may be provided.

  (4) In the above-described embodiments, the light-related element is the X-ray detection element DU including a thin film transistor and a capacitor. However, a light-receiving element sensitive to visible light such as a photodiode may be used. Even in a photodetector including a photodiode, parasitic capacitance and noise can be reduced.

  (5) In the embodiment described above, the interlayer insulating film at the intersection of the gate line and the data line has a two-layer structure, but the interlayer insulating film at the intersection of the ground line and the data line may also have a two-layer structure. . The insulating film 15 functioning as a passivation film may also have a two-layer structure.

  (6) In the above-described embodiments, the optical matrix device includes a bottom gate type thin film transistor. However, the optical matrix device may include a top gate type thin film transistor.

It is the block diagram which looked at the X-ray flat panel detector concerning Example 1 from the front. 3 is a cross-sectional view showing a configuration per pixel of the X-ray flat panel detector according to Embodiment 1. FIG. 3 is a circuit diagram showing an equivalent circuit per pixel of the X-ray flat panel detector according to Embodiment 1. FIG. 3 is a circuit diagram showing an equivalent circuit per pixel of the X-ray flat panel detector according to Embodiment 1. FIG. 3 is a circuit diagram showing an equivalent circuit per pixel of the X-ray flat panel detector according to Embodiment 1. FIG. FIG. 3 is a flowchart illustrating a flow of manufacturing the X-ray flat panel detector according to the first embodiment. FIG. 3 is a front view and a longitudinal sectional view showing manufacturing steps of the X-ray flat panel detector according to Embodiment 1. FIG. 3 is a front view and a longitudinal sectional view showing manufacturing steps of the X-ray flat panel detector according to Embodiment 1. FIG. 3 is a front view and a longitudinal sectional view showing manufacturing steps of the X-ray flat panel detector according to Embodiment 1. FIG. 3 is a front view and a longitudinal sectional view showing manufacturing steps of the X-ray flat panel detector according to Embodiment 1. FIG. 3 is a front view and a longitudinal sectional view showing manufacturing steps of the X-ray flat panel detector according to Embodiment 1. FIG. 3 is a front view and a longitudinal sectional view showing manufacturing steps of the X-ray flat panel detector according to Embodiment 1. 3 is a longitudinal sectional view showing manufacturing steps of the X-ray flat panel detector according to Embodiment 1. FIG. It is a voltage-leakage current relationship diagram of an interlayer insulating film between a gate line and a data line according to a conventional example. FIG. 6 is a relationship diagram of voltage-leakage current of an interlayer insulating film between a gate line and a data line according to Example 1; It is the schematic which shows the confirmation experiment of a present Example. It is the longitudinal cross-sectional view which the pinhole produced in the insulating film between the gate line and data line which concerns on a prior art example. 3 is a longitudinal sectional view in which pinholes are generated in the first insulating film of the X-ray flat panel detector according to Embodiment 1. FIG. 6 is a schematic perspective view illustrating a display device according to Example 2. FIG.

Explanation of symbols

1 ... X-ray flat panel detector (FPD)
DESCRIPTION OF SYMBOLS 4 ... Data line 6 ... Gate line 10 ... Insulating substrate 11 ... Insulating film 15 ... Insulating film 32 ... Insulating film 25 ... Substrate support table 20 ... Active matrix substrate DU ... X-ray detection element

Claims (9)

A manufacturing method of an optical matrix device configured by arranging elements related to light in a two-dimensional matrix,
A first insulating film applying step of forming a first insulating film by applying a fluid insulating material;
A pre-curing step of pre-curing the first insulating film by applying energy lower than a standard curing energy of the first insulating film;
A second insulating film application step of forming a second insulating film by applying a fluid insulating material on the pre-cured first insulating film by a printing method;
Method of manufacturing an optical matrix device, characterized in that a curing step to cure the first insulating film and the second insulating film that to form an interlayer insulating film or a passivation film. A method of manufacturing an optical matrix device according to claim 1,
The method for manufacturing an optical matrix device, wherein the printing method is an inkjet method. In the manufacturing method of the optical matrix device according to claim 1 or 2,
The method of manufacturing an optical matrix device, wherein the first insulating film and the second insulating film are the same type of insulating film. In the manufacturing method of the optical matrix device as described in any one of Claim 1 to 3,
The fluid insulating material forming the first insulating film and the second insulating film is an organic compound that is cured by heating or light irradiation. The method of manufacturing an optical matrix device according to claim 4,
The printer that performs the second insulating film application step includes an energy supply unit that pre-cures the first insulating film. In the manufacturing method of the optical matrix device according to claim 5,
The fluid insulator forming the first insulating film and the second insulating film is an organic compound that is cured by heating,
The pre-curing step is performed by raising the temperature of a printing stand of the printer. A method for manufacturing an optical matrix device. In the manufacturing method of the optical matrix device as described in any one of Claim 1 to 6,
The method of manufacturing an optical matrix device, wherein the first insulating film and the second insulating film are interlayer insulating films between a gate line and a data line of an active matrix substrate. In the manufacturing method of the optical-matrix device as described in any one of Claim 1 to 7 ,
The method of manufacturing an optical matrix device, wherein the optical matrix device is a photodetector. In the manufacturing method of the optical-matrix device as described in any one of Claim 1 to 7 ,
The method of manufacturing an optical matrix device, wherein the optical matrix device is an image display device.

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