JP5329147B2 - 有機el表示装置の製造方法 - Google Patents
有機el表示装置の製造方法 Download PDFInfo
- Publication number
- JP5329147B2 JP5329147B2 JP2008205206A JP2008205206A JP5329147B2 JP 5329147 B2 JP5329147 B2 JP 5329147B2 JP 2008205206 A JP2008205206 A JP 2008205206A JP 2008205206 A JP2008205206 A JP 2008205206A JP 5329147 B2 JP5329147 B2 JP 5329147B2
- Authority
- JP
- Japan
- Prior art keywords
- mother
- adhesive sheet
- organic
- substrate
- sealing substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 239000000758 substrate Substances 0.000 claims description 205
- 239000000853 adhesive Substances 0.000 claims description 164
- 230000001070 adhesive effect Effects 0.000 claims description 164
- 238000007789 sealing Methods 0.000 claims description 132
- 239000000463 material Substances 0.000 claims description 23
- 230000001681 protective effect Effects 0.000 claims description 20
- 239000012298 atmosphere Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 14
- 239000011368 organic material Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 description 63
- 239000010410 layer Substances 0.000 description 44
- 239000011347 resin Substances 0.000 description 19
- 229920005989 resin Polymers 0.000 description 19
- 239000011521 glass Substances 0.000 description 13
- 238000002161 passivation Methods 0.000 description 13
- 239000002313 adhesive film Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 238000007639 printing Methods 0.000 description 6
- 239000007983 Tris buffer Substances 0.000 description 5
- 239000002585 base Substances 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- 230000005525 hole transport Effects 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- -1 4-biphenylyl Chemical group 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000005299 abrasion Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000565 sealant Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 150000001454 anthracenes Chemical class 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 125000000609 carbazolyl group Chemical class C1(=CC=CC=2C3=CC=CC=C3NC12)* 0.000 description 2
- 238000010549 co-Evaporation Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- CNQCVBJFEGMYDW-UHFFFAOYSA-N lawrencium atom Chemical compound [Lr] CNQCVBJFEGMYDW-UHFFFAOYSA-N 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 2
- FQJQNLKWTRGIEB-UHFFFAOYSA-N 2-(4-tert-butylphenyl)-5-[3-[5-(4-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]phenyl]-1,3,4-oxadiazole Chemical compound C1=CC(C(C)(C)C)=CC=C1C1=NN=C(C=2C=C(C=CC=2)C=2OC(=NN=2)C=2C=CC(=CC=2)C(C)(C)C)O1 FQJQNLKWTRGIEB-UHFFFAOYSA-N 0.000 description 1
- CFNMUZCFSDMZPQ-GHXNOFRVSA-N 7-[(z)-3-methyl-4-(4-methyl-5-oxo-2h-furan-2-yl)but-2-enoxy]chromen-2-one Chemical compound C=1C=C2C=CC(=O)OC2=CC=1OC/C=C(/C)CC1OC(=O)C(C)=C1 CFNMUZCFSDMZPQ-GHXNOFRVSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 125000005605 benzo group Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 239000002274 desiccant Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical class [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 150000007857 hydrazones Chemical class 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Chemical class 0.000 description 1
- 239000002184 metal Chemical class 0.000 description 1
- DCZNSJVFOQPSRV-UHFFFAOYSA-N n,n-diphenyl-4-[4-(n-phenylanilino)phenyl]aniline Chemical compound C1=CC=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 DCZNSJVFOQPSRV-UHFFFAOYSA-N 0.000 description 1
- 150000004866 oxadiazoles Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- SIOXPEMLGUPBBT-UHFFFAOYSA-N picolinic acid Chemical class OC(=O)C1=CC=CC=N1 SIOXPEMLGUPBBT-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 125000004309 pyranyl group Chemical class O1C(C=CC=C1)* 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- QEPMORHSGFRDLW-UHFFFAOYSA-L zinc;2-(2-hydroxyphenyl)-3h-1,3-benzoxazole-2-carboxylate Chemical class [Zn+2].OC1=CC=CC=C1C1(C([O-])=O)OC2=CC=CC=C2N1.OC1=CC=CC=C1C1(C([O-])=O)OC2=CC=CC=C2N1 QEPMORHSGFRDLW-UHFFFAOYSA-L 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
- H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/851—Division of substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
Claims (5)
- 表示領域と端子部を有する素子基板と、前記表示領域を覆って接着材シートが形成され、前記接着材シートに封止基板が接着している有機EL表示装置の製造方法において、
前記有機EL表示装置は、前記封止基板が複数形成されるマザー封止基板と、前記素子基板が複数形成されるマザー素子基板と前記マザー封止基板と前記マザー素子基板を接着するマザー接着材シートとから形成されるマザーパネルから分離されて形成され、
前記マザー接着材シートは、前記マザー素子基板とマザー封止基板を接着している状態においては一枚のシートであって、接着材シート除去部を有し、
前記接着材シート除去部は前記マザー接着材シートの端部にまで延在し、
前記マザー接着材シートは、前記マザー素子基板に形成される複数の表示領域を覆うように、かつ、前記マザー素子基板に形成される前記複数の端子を覆わないように前記マザー封止基板に接着することを特徴とする有機EL表示装置の製造方法。 - 前記マザー接着材シートはロール状フィルムとなった保護フィルムに貼りつけられていることを特徴とする請求項1に記載の有機EL表示装置の製造方法。
- 表示領域と端子部を有する素子基板と、前記表示領域を覆って接着材シートが形成され、前記接着材シートに封止基板が接着している有機EL表示装置の製造方法において、
前記有機EL表示装置は、前記封止基板が複数形成されるマザー封止基板と、前記素子基板が複数形成されるマザー素子基板と前記マザー封止基板と前記マザー素子基板を接着するマザー接着材シートとから形成されるマザーパネルから分離されて形成され、
前記マザー接着材シートは、前記マザー素子基板とマザー封止基板を接着している状態においては一枚のシートであって、接着材シート除去部を有し、
前記接着材シート除去部は、前記マザー接着材シートの端部にまで延在し、
前記マザー接着材シートは前記マザー封止基板と負圧雰囲気中で接着され、
前記マザー接着材シートが接着したマザー封止基板は、負圧雰囲気中でマザー素子基板と接着されてマザーパネルが形成され、
前記マザー接着材シート除去部は前記マザーパネル形成後も外気と遮断されていないことを特徴とする有機EL表示装置の製造方法。 - 表示領域と端子部を有する素子基板と、前記表示領域を覆って接着材が形成され、前記接着材に封止基板が接着している有機EL表示装置の製造方法において、
前記有機EL表示装置は、前記封止基板が複数形成されるマザー封止基板と、前記素子基板が複数形成されるマザー素子基板と前記マザー封止基板と前記マザー素子基板を接着する接着材とから形成されるマザーパネルから分離されて形成され、
前記接着材は連続した面となるように、かつ、前記封止基板に接着材除去部が前記封止基板の端部にまで延在するように印刷され、
前記接着材は、前記マザー封止基板が前記マザー素子基板に接着した時に、前記マザー素子基板に形成された端子部を覆わないように前記マザー封止基板に印刷されることを特徴とする有機EL表示装置の製造方法。 - 前記マザー封止基板と前記マザー素子基板は負圧雰囲気中で接着されることを特徴とする請求項4に記載の有機EL表示装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008205206A JP5329147B2 (ja) | 2008-08-08 | 2008-08-08 | 有機el表示装置の製造方法 |
US12/537,597 US8152583B2 (en) | 2008-08-08 | 2009-08-07 | Manufacturing method of organic EL display device |
CN2009101603363A CN101645404B (zh) | 2008-08-08 | 2009-08-07 | 有机el显示装置的制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008205206A JP5329147B2 (ja) | 2008-08-08 | 2008-08-08 | 有機el表示装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010040467A JP2010040467A (ja) | 2010-02-18 |
JP5329147B2 true JP5329147B2 (ja) | 2013-10-30 |
Family
ID=41653366
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008205206A Active JP5329147B2 (ja) | 2008-08-08 | 2008-08-08 | 有機el表示装置の製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8152583B2 (ja) |
JP (1) | JP5329147B2 (ja) |
CN (1) | CN101645404B (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011132631A1 (ja) * | 2010-04-21 | 2011-10-27 | コニカミノルタホールディングス株式会社 | 有機エレクトロルミネッセンスパネルの製造方法及びその製造方法で製造された有機エレクトロルミネッセンスパネル |
KR102001889B1 (ko) * | 2010-12-24 | 2019-07-22 | 엘지디스플레이 주식회사 | 유기전계발광표시장치의 제조방법 |
KR102307693B1 (ko) * | 2014-12-12 | 2021-10-06 | 삼성디스플레이 주식회사 | 표시패널 및 이의 제조방법 |
JP6878225B2 (ja) * | 2017-09-15 | 2021-05-26 | デクセリアルズ株式会社 | 透明パネルの製造方法、光学装置の製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI226205B (en) * | 2000-03-27 | 2005-01-01 | Semiconductor Energy Lab | Self-light emitting device and method of manufacturing the same |
JP4419012B2 (ja) | 2002-09-27 | 2010-02-24 | 株式会社スリーボンド | 有機el素子用封止材及び有機el素子の封止方法 |
JP3921482B2 (ja) | 2004-07-28 | 2007-05-30 | トッキ株式会社 | 有機el素子の製造装置並びに有機el素子 |
JP2006086084A (ja) * | 2004-09-17 | 2006-03-30 | Tohoku Pioneer Corp | 自発光パネルの製造方法 |
TWI405496B (zh) * | 2004-12-13 | 2013-08-11 | Sanyo Electric Co | 有機電場發光元件之封裝方法,及發光面板以及顯示面板之製造方法 |
US20060270304A1 (en) * | 2005-05-24 | 2006-11-30 | Tohoku Pioneer Corporation | Electro-optical panel, sealing member, electro-optical panel manufacturing method, self-emission panel, self-emission panel manufacturing method, and sealing member for use in self-emission panel |
JP2007080711A (ja) * | 2005-09-15 | 2007-03-29 | Pioneer Electronic Corp | 有機el素子の封止方法 |
JP2007242313A (ja) * | 2006-03-07 | 2007-09-20 | Sony Corp | 表示装置の製造方法 |
KR101383711B1 (ko) * | 2007-08-08 | 2014-04-09 | 삼성디스플레이 주식회사 | 표시 장치와 이의 제조방법 |
-
2008
- 2008-08-08 JP JP2008205206A patent/JP5329147B2/ja active Active
-
2009
- 2009-08-07 US US12/537,597 patent/US8152583B2/en active Active
- 2009-08-07 CN CN2009101603363A patent/CN101645404B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
US20100035505A1 (en) | 2010-02-11 |
CN101645404A (zh) | 2010-02-10 |
JP2010040467A (ja) | 2010-02-18 |
CN101645404B (zh) | 2012-02-08 |
US8152583B2 (en) | 2012-04-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
USRE49770E1 (en) | Flexible display having a crack suppressing layer | |
US8102115B2 (en) | Organic EL display device and manufacturing method thereof | |
JP2009117181A (ja) | 有機el表示装置およびその製造方法 | |
US8098010B2 (en) | Organic electroluminescence display device and manufacturing method thereof | |
US10326104B2 (en) | Organic EL display provided with gel-state encapsulant incorporating a desiccant and a high molecular-weight medium | |
JP2009117178A (ja) | 有機el表示装置とその製造方法 | |
US10177347B2 (en) | Method for manufacturing display device | |
JP2010027599A (ja) | 有機発光ディスプレイ装置及びその製造方法 | |
JP5329147B2 (ja) | 有機el表示装置の製造方法 | |
JP2010020973A (ja) | 有機el表示装置の製造方法 | |
JP5260029B2 (ja) | 有機el表示装置の製造方法 | |
KR100796128B1 (ko) | 유기 전계 발광표시장치의 제조방법 | |
JP5215804B2 (ja) | 有機el表示装置の製造方法 | |
JP2010027481A (ja) | 有機el表示装置 | |
JP2014123463A (ja) | 有機エレクトロルミネッセンス表示パネルの製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20110218 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20110218 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20110512 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120801 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120807 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121003 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130416 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130610 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130625 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130724 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 5329147 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |